Light-emitting diode element

Abstract

A light-emitting diode device includes: a first edge and a third edge that are oppositely disposed, and a second edge and a fourth edge that are oppositely disposed; a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed therebetween; an exposed region formed in the semiconductor stack, including a bottom surface that includes the upper surface of the first semiconductor layer; a transparent conductive layer located on the second semiconductor layer; a first electrode formed on and electrically connected to the first semiconductor layer, including a first pad electrode; and a second electrode formed on and electrically connected to the second semiconductor layer, including a second pad electrode; when viewed from above: the second semiconductor layer includes a first sub-profile and a second sub-profile connected thereto; the two sub-profiles are adjacent to the first edge, and the distance between the first edge and the first sub-profile is greater than the distance between the first edge and the second sub-profile; the distance between the transparent conductive layer and the first sub-profile is less than the distance between the transparent conductive layer and the second sub-profile.

Description

[0001] This application is a divisional application of a Chinese invention patent application (Application No.: 201810052841.5, Application Date: January 19, 2018, Invention Title: Light-emitting Diode Element). Technical Field

[0002] The present invention relates to a light-emitting element, and more particularly, to a light-emitting element having improved brightness and current dispersion. Background Art

[0003] Light-emitting diodes (LEDs) in solid-state light-emitting elements have characteristics such as low power consumption, low heat generation, long lifespan, impact resistance, small size, fast response speed, and good optoelectronic properties, for example, having a stable emission wavelength, etc., so they have been widely used in household devices, indicator lights, and optoelectronic products, etc. With the development of optoelectronic technology, solid-state light-emitting elements have made considerable progress in luminous efficiency, operating lifespan, and brightness, and light-emitting diodes are expected to become the mainstream of future lighting devices.

[0004] Existing light-emitting diodes include a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer formed on the substrate, and p and n-electrodes respectively formed on the p-type / n-type semiconductor layers. When a specific value of forward bias voltage is input to the light-emitting diode through the electrodes, holes from the p-type semiconductor layer and electrons from the n-type semiconductor layer combine in the active layer to emit light. However, these electrodes will block the light emitted by the active layer, and current is easily concentrated and congested in the semiconductor layer near the electrodes. Therefore, an optimized electrode structure is necessary for improving the brightness, light field uniformity of the light-emitting diode, and reducing the operating voltage. Summary of the Invention

[0005] The present invention discloses a light-emitting element, comprising: a first edge, a second edge, a third edge, and a fourth edge, wherein the first edge and the third edge are opposite, and the second edge and the fourth edge are opposite; a semiconductor stack, comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed therebetween; an exposed region, formed in the semiconductor stack, comprising a bottom, wherein the bottom comprises the upper surface of the first semiconductor layer; a transparent conductive layer, located on the second semiconductor layer; a first electrode, formed on the first semiconductor layer and electrically connected to the first semiconductor layer, comprising a first pad electrode; and a second electrode, formed on the second semiconductor layer and electrically connected to the second semiconductor layer, comprising a second pad electrode; wherein when viewed from above: the second semiconductor layer comprises a contour, the contour comprising a first sub-contour and a second sub-contour connected to the first sub-contour; the first sub-contour and the second sub-contour are adjacent to the first edge, and the distance between the first edge and the first sub-contour is greater than the distance between the first edge and the second sub-contour; and wherein the distance between the transparent conductive layer and the first sub-contour is less than the distance between the transparent conductive layer and the second sub-contour. Description of the Drawings

[0006] Figures 1 to 2E Schematic diagram of the light-emitting element 1 according to the first embodiment of the present invention;

[0007] Figures 3A to 3C Schematic diagrams of different embodiments of the cross-section along the line A-A' in the light-emitting element 1 of the present invention;

[0008] Figures 4A to 4C Schematic diagrams of different embodiments of the cross-section along the line A-A' in the light-emitting element 1 of the present invention;

[0009] Figure 5 Schematic diagrams of different embodiments of the partial top view of the light-emitting element 1 of the present invention;

[0010] Figure 6 Top view of the light-emitting element 2 according to the second embodiment of the present invention;

[0011] Figure 7 Top view of the light-emitting element 3 according to the third embodiment of the present invention;

[0012] Figure 8 Top views of the light-emitting elements according to different embodiments of the present invention;

[0013] Figure 9 Schematic plan view of the schematic distribution of the current density of the light-emitting elements according to the second embodiment of the present invention and the comparative example;

[0014] Figure 10 Schematic diagram of the experimental data of the light output power and forward voltage of the light-emitting elements according to the embodiments and comparative examples of the present invention;

[0015] Figure 11A Top view of the light-emitting element 4 according to the fourth embodiment of the present invention;

[0016] Figure 11B Cross-sectional view along the line B-B' in the light-emitting element 4 according to the fourth embodiment;

[0017] Figure 12 Schematic diagram of the light-emitting device 6 according to an embodiment of the present invention;

[0018] Figure 13 Schematic diagram of the light-emitting device 7 according to another embodiment of the present invention.

[0019] Symbol description

[0020] 1-4 Light-emitting elements

[0021] 6, 7 Light-emitting devices

[0022] 10 Substrate

[0023] 12 Semiconductor stack

[0024] 121 First semiconductor layer

[0025] 122 Second semiconductor layer

[0026] 123 Active layer

[0027] 18 Transparent conductive layer

[0028] 180, 530 Opening

[0029] 20 First electrode

[0030] 201 First pad electrode

[0031] 202 First finger electrode

[0032] 28 Exposed area

[0033] 30 Second electrode

[0034] 301 Second pad electrode

[0035] 302 Second finger electrode

[0036] 302a First part

[0037] 302b Second part

[0038] 3021 First connection part

[0039] 40 First current blocking region

[0040] 401 First central region

[0041] 402, 501a Island part

[0042] 50 Second current blocking region

[0043] 501 Second central region

[0044] 502 Extension region

[0045] 504 Gap

[0046] 51 Carrier

[0047] 511 First conductive pad

[0048] 512 Second conductive pad

[0049] 53 Insulating part

[0050] 54 Reflective structure

[0051] 602 Lamp housing

[0052] 604 Reflector

[0053] 606 Bearing part

[0054] 608 Light-emitting unit

[0055] 610 Light-emitting module

[0056] 612 Lamp socket

[0057] 614 Radiator

[0058] 616 Connecting part

[0059] 618 Electrical connection component

[0060] C S 、C T Profile

[0061] C S1 、C S2 、C T1 Sub-profile

[0062] W CB1 、W CB2 、W P 、W T Width

[0063] Distances D, D1, d1 to d6

[0064] E1 to E4 First to fourth edges

[0065] L1 Virtual extension line

[0066] L2 Tangent line

[0067] R Local area Detailed implementation manner

[0068] The embodiments of the present invention will be described in detail and are shown in the accompanying drawings. The same or similar parts will be denoted by the same reference numerals in each drawing and the description.

[0069] Figure 1 It is a top view of the light-emitting element 1 according to the first embodiment of the present invention. Figure 2A It is Figure 1 a cross-sectional view of the light-emitting element 1 along the line segment A-A'; Figure 2B a cross-sectional view of the light-emitting element 1 along the line segment B-B';

[0070] Figure 2C a cross-sectional view of the light-emitting element 1 along the line segment C-C'; Figure 2D an enlarged view of the local area R of the light-emitting element 1; and Figure 2E a cross-sectional view of the light-emitting element 1 along the line segment D-D'.

[0071] As Figure 1 and Figures 2A to 2CAs shown, the light-emitting element 1 includes a substrate 10, a semiconductor stack 12 located on the substrate 10, a first and a second current-blocking region 40 and 50 located on the semiconductor stack 12, a transparent conductive layer 18 located on the semiconductor stack 12, a first electrode 20, a second electrode 30, and a protective layer (not shown) having openings exposing the first electrode 20 and the second electrode 30. The first electrode 20 includes a first pad electrode 201 and a first finger electrode 202 extending from the first pad electrode 201. The second electrode 30 includes a second pad electrode 301 and a second finger electrode 302 extending from the second pad electrode 301.

[0072] As Figure 1 In the top view shown, the light-emitting element 1 includes a first edge E1, a second edge E2, a third edge E3 opposite to the first edge E1, and a fourth edge E4 opposite to the second edge E1. Among them, the first edge E1 and the third edge E3 are longer than the second edge E2 and the fourth edge E4.

[0073] The first pad electrode 201 and the second pad electrode 301 are respectively disposed in the two side regions of the two opposite edges of the light-emitting element 1. In one embodiment, the first pad electrode 201 and the second pad electrode 301 are respectively disposed in the regions of the light-emitting element 1 near the two opposite edges. In one embodiment, the first pad electrode 201 and the second pad electrode 301 are respectively disposed on the two opposite edges. In another embodiment, any one or both of the first pad electrode 201 and the second pad electrode 301 are respectively spaced apart from the two opposite edges by a distance. In one embodiment, the first pad electrode 201 and / or the second pad electrode 301 are respectively disposed in the regions of the light-emitting element 1 near the two opposite edges, and the shortest distance between each pad electrode and each edge near the pad electrode is greater than the length of the pad electrode. In one embodiment, the shortest distance between each pad electrode and each edge near the pad electrode is equal to or less than the width of the pad electrode. The first finger electrode 202 extends from the first pad electrode 201 and extends from one of the four edges toward the opposite side; the second finger electrode 302 extends from the second pad electrode 301 located adjacent to the above-mentioned opposite edge toward the edge where the first pad electrode 201 is located. More specifically, as Figure 1 shown, the first pad electrode 201 is disposed on the second edge E2, and the first finger electrode 202 extends along the second edge E2 and the first edge E1 and points to the fourth edge E4. The second pad electrode 301 is disposed near the fourth edge E4 and is located on the midline of the fourth edge. The second finger electrode 302 extends along a direction parallel to the third edge E3 and points to the second edge E2. In another embodiment, the second pad electrode 301 is disposed between the midline of the fourth edge and the third edge E3 (or the first edge E1).

[0074] The substrate 10 can be a growth substrate, including a gallium arsenide (GaAs) substrate for growing aluminum gallium indium phosphide (AlGaInP), a sapphire (Al2O3) substrate, a gallium nitride (GaN) substrate, a silicon carbide (SiC) substrate, or an aluminum nitride (AlN) substrate for growing indium gallium nitride (InGaN) or aluminum gallium nitride (AlGaN). The substrate 10 can be a patterned substrate, that is, the upper surface of the substrate 10 on which the semiconductor stack 12 can be epitaxially grown can have a patterned structure. The light emitted from the semiconductor stack 12 can be refracted by the patterned structure of the substrate 10, thereby increasing the brightness of the light-emitting element. In addition, the patterned structure slows down or suppresses the dislocation caused by lattice mismatch between the substrate 10 and the semiconductor stack 12, thereby improving the epitaxial quality of the semiconductor stack 12.

[0075] In an embodiment of the present invention, the semiconductor stack 12 can be formed on the substrate 10 by metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), or ion plating, such as sputtering or evaporation.

[0076] The semiconductor stack 12 includes a first semiconductor layer 121, an active layer 123, and a second semiconductor layer 122 formed on the substrate 10 in sequence. In an embodiment of the present invention, the first semiconductor layer 121 and the second semiconductor layer 122, such as a cladding layer or a confinement layer, have different conduction types, electrical properties, polarities, or doping elements for providing electrons or holes. For example, the first semiconductor layer 121 is an n-type semiconductor, and the second semiconductor layer 122 is a p-type semiconductor. The active layer 123 is formed between the first semiconductor layer 121 and the second semiconductor layer 122. Electrons and holes combine in the active layer 123 under the drive of current, converting electrical energy into light energy to emit light. The wavelength of the light emitted by the light-emitting element 1 or the semiconductor stack 12 can be adjusted by changing the physical properties and chemical compositions of one or more layers in the semiconductor stack 12.

[0077] The materials of the semiconductor stack 12 include Al x In y Ga (1-x-y) N or Al x In y Ga (1-x-y)III-V semiconductor material of P, where 0 ≤ x, y ≤ 1; (x + y) ≤ 1. According to the material of the active layer, when the material of the semiconductor stack 12 is of the AlInGaP series, red light with a wavelength between 610 nm and 650 nm or yellow light with a wavelength between 550 nm and 570 nm can be emitted. When the material of the semiconductor stack 12 is of the InGaN series, blue light or deep blue light with a wavelength between 400 nm and 490 nm or green light with a wavelength between 490 nm and 550 nm can be emitted. When the material of the semiconductor stack 12 is of the AlGaN series, UV light with a wavelength between 400 nm and 250 nm can be emitted. The active layer 123 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MQW). The material of the active layer 123 can be an i-type, p-type, or n-type semiconductor.

[0078] In addition, before forming the semiconductor stack 12, a buffer layer (not shown in the figure) can be formed on the upper surface of the substrate 10. The buffer layer can also reduce the above-mentioned lattice mismatch and suppress dislocations, thereby improving the epitaxial quality. The material of the buffer layer includes GaN, AlGaN, or AlN. In one embodiment, the buffer layer includes a plurality of sub-layers (not shown in the figure). The sub-layers include the same material or different materials. In one embodiment, the buffer layer includes two sub-layers. The sub-layers include the same material AlN. The growth method of the first sub-layer is sputtering, and the growth method of the second sub-layer is MOCVD. In one embodiment, the buffer layer further includes a third sub-layer. The growth method of the third sub-layer is MOCVD, and the growth temperature of the second sub-layer is higher or lower than that of the third sub-layer.

[0079] As Figure 1 and Figure 2B shown, part of the second semiconductor layer 122 and the active layer 123 are etched downward and removed until an upper surface of the first semiconductor layer 121 is exposed to form an exposed area 28. In the exposed area 28, the sidewalls of the second semiconductor layer 122 and the active layer 123 and the upper surface of the first semiconductor layer 121 are exposed. In one embodiment, the exposed area 28 is disposed at the first edge E1 and the second edge E2 and extends along these two edges. The first electrode 20 is disposed on the exposed upper surface of the first semiconductor layer 121, which is a part of the exposed area 28, and forms an electrical connection with the first semiconductor layer 121. The second electrode 30 is disposed on the second semiconductor layer 122 and forms an electrical connection with the second semiconductor layer 122.

[0080] The materials of the first pad electrode 201, the first finger electrode 202, the second pad electrode 301 and the second finger electrode 302 are selected from gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), rhodium (Rh), alloys or laminates of the above materials.

[0081] A first current blocking region 40 is formed between the first electrode 20 and the first semiconductor layer 121, and a second current blocking region 50 is formed between the second electrode 30 and the second semiconductor layer 122. In one embodiment, the first current blocking region 40 is formed between the first pad electrode 201 and / or the first finger electrode 202 and the first semiconductor layer 121. The second current blocking region 50 is formed between the second pad electrode 301 and / or the second finger electrode 302 and the second semiconductor layer 122. When current is injected into the light-emitting element 1 via the first pad electrode 201 and the second pad electrode 301, the current diffuses via the first finger electrode 202 and the second finger electrode 302, and then flows into the transparent conductive layer 18. The first current blocking region 40 and the second current blocking region 50 prevent most of the current from directly injecting into the active layer 123 under the electrodes. That is, the injected current is blocked from flowing downward into the region under the electrodes.

[0082] In this embodiment, as Figure 1 shown, the first current blocking region 40 includes a plurality of separated island portions 402 under the first finger electrode 202. The second current blocking region 50 includes a second central region 501 under the second pad electrode 301 and an extension region 502 extending from the second central region 501 and located under the second finger electrode 302. Near the second pad electrode 301, the second central region 501 blocks the downward flow of current (electrons or holes). The plurality of separated island portions 402 block the downward flow of the current dispersed in the first finger electrode 202, and the current is injected into the first semiconductor layer 121 through the first finger electrode 202 between two adjacent island portions 402. The current dispersed in the second finger electrode 302 flows into the transparent conductive layer 18 and is blocked from flowing downward by the extension region 502 under the second finger electrode 302. Therefore, the current laterally diffuses in the transparent conductive layer 18 and uniformly flows into the semiconductor stack 12.

[0083] In another embodiment, similar to the second current blocking region 50, the first current blocking region 40 further includes a first central region (not shown in the figure) under the first pad electrode 201. In one embodiment, the first central region of the first current blocking region 40 may be larger or smaller than the first pad electrode 201. In one embodiment, the first central region is separated from the plurality of island portions 402.

[0084] In another embodiment, a first central region (not shown in the figure) of the first current blocking region 40 below the first pad electrode 201 is connected to the island portion 402 closest to the first pad electrode 201.

[0085] In another embodiment, the first current blocking region 40 includes a first central region (not shown in the figure) under the first pad electrode 201, but does not include the plurality of island portions 402 under the first finger electrode 202.

[0086] The materials of the first current blocking region 40 and the second current blocking region 50 include transparent insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, or aluminum oxide. The structure of the current blocking region can be a single layer, a multi-layer, or a multi-layer structure with repeated overlapping, such as a distributed Bragg reflector (DBR). The thickness ranges of the first current blocking region 40 and the second current blocking region 50 are In one embodiment, the thickness ranges of the first current blocking region 40 and the second current blocking region 50 are In another embodiment, the thickness ranges of the first current blocking region 40 and the second current blocking region 50 are

[0087] The transparent conductive layer 18 is formed on the upper surfaces of the second current blocking region 40 and the second semiconductor layer 122, so that the current injected into the second electrode 30 can be evenly dispersed by the transparent conductive layer 18 and then flow into the second semiconductor layer 122. Since the transparent conductive layer 18 is disposed on the light-emitting surface of the light-emitting element 1, a conductive material with transparent properties is preferably selected. More specifically, the transparent conductive layer 18 may include a thin metal, such as gold or nickel. The transparent conductive layer 18 may include oxides of metals selected from zinc, indium, tin, etc., such as ZnO, InO, SnO, ITO, IZO, or GZO (gallium-doped zinc oxide).

[0088] As Figure 1 shown, the extension region 502 of the second current blocking region 50 is disposed along the second finger electrode 302 and has a width larger than that of the second finger electrode 302. In one embodiment, the outer contour of the second current blocking region 50 exceeds the outer contour of the second electrode 30 by 1 to 10 μm.

[0089] In another embodiment, the extension region 502 of the second current blocking region 50 includes a plurality of separated island portions (not shown in the figure).

[0090] As Figure 2AAs shown, the second central region 501 of the second current blocking region 50 includes an opening 503 under the second pad electrode 301. The transparent conductive layer 18 includes an opening 180 corresponding to the position of the second pad electrode 301. In one embodiment, the opening 180 exposes the second semiconductor layer 122 and / or the second central region 502. The second pad electrode 301 contacts the second semiconductor layer 122 via the opening 180 and the opening 503. In this embodiment, the width W of the opening 180 of the transparent conductive layer 18 T is less than the outer width W of the second central region 502 CB1 and greater than or equal to the width W of the opening 503 of the second central region 501 CB2 , such that the transparent conductive layer 18 covers the outer surface and the upper surface of the second central region 501. The transparent conductive layer 18 covers the upper surface of the second semiconductor layer 122, the extension region 502 of the second current blocking region 50, and the upper surface of the second central region 501. In one embodiment, the width W of the opening 180 of the transparent conductive layer 18 T is less than the width W of the opening 503 of the second central region 501 CB2 , such that the transparent conductive layer 18 fills into the opening 503 of the second central region 501.

[0091] As Figure 1 shown, the width of each island portion 402 is larger than the width of the first finger electrode 202, and each island portion 402 does not contact the side surfaces of the second semiconductor layer 122 and the active layer 123 in the exposed region 28. A plurality of separated island portions 402 are distributed on the first semiconductor layer 121. The first finger electrode 202 is formed on the island portion 402 and only contacts the first semiconductor layer 121 not covered by the island portion 402. Therefore, current congestion in a specific region adjacent to the first current blocking region 40 in the semiconductor stack 12 can be prevented; that is, current aggregation in the region near the first finger electrode 202 can be prevented. The spacing between two island portions 402 and / or the spacing between the island portion 402 and the side surface of the exposed region 28 can be designed to enhance current spreading in the semiconductor stack 12. In one embodiment, as Figure 2EAs shown, the shortest distance S between the island portion 402 and the side surface of the exposed area 28 is not less than 1 μm. The island portion 402 is made of a transparent insulating material. In one embodiment, the side surface of the island portion 402 is inclined with respect to the upper surface of the first semiconductor layer 121 of the exposed area 28. In this way, the inclined side surface of the island portion 142 is conducive to light extraction. In one embodiment, the distance between two island portions 402 and / or the distance between the island portion 402 and the side surface of the exposed area 28 can be designed to enhance light extraction. In one embodiment, when the distance between the island portion 402 and the side surface of the exposed area 28 is not less than 1 μm, light is more easily extracted from the semiconductor stack 12. In one embodiment, the island portion 402 has a rounded corner or a rounded edge. The rounded corner or rounded edge of the island portion 402 also helps with light extraction.

[0092] In another embodiment, when viewed from above, the first finger electrode 202 and the second finger electrode 302 have different widths. In one embodiment, the first finger electrode 202 is wider than the second finger electrode 302.

[0093] In another embodiment, when viewed from above, the extension region 502 of the second current blocking region 50 and the island portion 402 of the first current blocking region 40 have different widths. In one embodiment, the extension region 502 of the second current blocking region 50 is wider than the island portion 402 of the first current blocking region 40.

[0094] Referring to Figure 1 、 Figure 2A and Figure 2D , the upper surface of the second semiconductor layer 122 between the fourth edge E4 and the end of the first finger electrode 202 is not covered by the transparent conductive layer 18. In Figure 1 and Figure 2D 's top view, the second semiconductor layer 122 has a contour C S , the contour C S includes a first sub-contour C adjacent to the first finger electrode 202 S1 and a second sub-contour C connected to the first sub-contour C S1 and adjacent to the first edge E1 S2 . In one embodiment, the first sub-contour C S1 is located in the exposed area 28 and is part of the contour of the exposed area 28. In one embodiment, the first sub-contour C S1 is parallel to the first edge E1. The first finger electrode 202 is arranged along the first sub-contour C S1 . A part of the second sub-contour C S2 faces the end of the first finger electrode 202. Figure 2D The dashed line L1 in S1 represents a virtual extension line extending from the first sub-contour C S2The upper surface of the second semiconductor layer 122 between them is not covered by the transparent conductive layer 18.

[0095] In Figure 1 and Figure 2D top view, the transparent conductive layer 18 has a contour C T , the contour C T includes a sub - contour C S1 adjacent and parallel to the first sub - contour C T1 . In one embodiment, the distance between the first sub - contour C S1 and the sub - contour C T1 , and the distance between the contour C S and the contour C T near the second edge E2, the third edge E3, and the fourth edge E4 are substantially the same. The distance D1 between the sub - contour C T1 of the transparent conductive layer 18 and the second sub - contour C S2 of the second semiconductor layer 122 is different from the distance between the sub - contour C S1 and the sub - contour C T1 , or different from the distance between the contour C S and the contour C T near the second edge E2, the third edge E3, and the fourth edge E4.. In one embodiment, D1 is greater than the distance between the sub - contour C T1 and the first sub - contour C S1 of the second semiconductor layer 122. In one embodiment, a part of the sub - contour C T1 of the transparent conductive layer 18 is not arranged along the second sub - contour line C S2 of the second semiconductor layer 122.

[0096] In one embodiment, as Figure 1 shown, the length L of the first finger - shaped electrode 202 on the first edge E1 is greater than half of the length of the first edge E1.

[0097] In another embodiment, the first pad electrode 201 is arranged near a short side (i.e., the second edge E2). In another embodiment, the first pad electrode 201 can be located at or near a corner of the light - emitting element 1. In one embodiment, the first pad electrode 201 is located at or near a corner close to the second edge E2.

[0098] In another embodiment, when viewed from above, the area of the transparent conductive layer 18 is less than 93% of the area of the second semiconductor layer 122.

[0099] In an embodiment, since the first finger electrode 202 is at the first edge E1 and extends along the first edge E1 but does not extend to the fourth edge E4, current diffusion is poor within the semiconductor stack 12 between the fourth edge E4 and the end of the first finger electrode 202, and the current density in this region is lower than that in other regions. In this embodiment, the top surface of the second semiconductor layer 122 in the region with poor current diffusion is not covered by the transparent conductive layer 18, so that current can be confined to the region covered by the transparent conductive layer 18. Therefore, the region covered by the transparent conductive layer 18 has a higher current density, and the current utilization efficiency is improved. In addition, the transparent conductive layer 18 still has a certain absorption ratio for light of a specific wavelength, and the light emitted from the active layer 123 can be extracted through the region not covered by the transparent conductive layer 18, and the light absorption caused by the transparent conductive layer 18 is reduced, thereby improving the brightness of the light-emitting element 1.

[0100] Figures 3A to 3C respectively showing different embodiments of the cross-section of the light-emitting element 1 along the line segment A-A' according to the present invention Figure 1 of the light-emitting element 1 along the line segment A-A'. Figure 3A Further showing an enlarged view of the partial region R. The difference between these different embodiments and the first embodiment lies in the width of the opening 180 of the transparent conductive layer 18.

[0101] In an embodiment, as Figure 3A shown, the width W of the opening 180 of the transparent conductive layer 18 T is less than the outer width W of the second central region 501 CB1 and greater than the width W of the opening 503 CB2 , such that the transparent conductive layer 18 covers the outer surface and part of the upper surface of the second central region 501. In an embodiment, the width W T is greater than the width W of the second pad electrode 301 P , such that the transparent conductive layer 18 does not contact the second pad electrode 301. In an embodiment, the width W T is equal to the width W of the second pad electrode 301 P , such that the transparent conductive layer 18 contacts the side surface of the second pad electrode 301. In an embodiment, the distance D between the outer edge of the second central region 501 and the opening 180 is between 1 and 10 μm.

[0102] In one embodiment, as Figure 3B shown, the width W of the opening 180 of the transparent conductive layer 18 T is substantially greater than or equal to the width W of the second central region 501 CB1 . The transparent conductive layer 18 does not contact the side surface and the upper surface of the second central region 501 or only contacts the side surface of the second central region 501. In another embodiment, as Figure 3CAs shown, the width W of the second pad electrode 301 is P is smaller than or substantially equal to the width W of the opening 503 of the second central region 501 CB2 The second pad electrode 301 does not contact the transparent conductive layer 18 and the upper surface of the second central area 501 .

[0103] In one embodiment, the entire bottom area of the second pad electrode 301 contacts the second central area 501 and the second semiconductor layer 122, and the adhesion between the second pad electrode 301 and the second current blocking area 50 and / or the second semiconductor layer 122 is greater than the adhesion between the second pad electrode 301 and the transparent conductive layer 18, thereby preventing the second pad electrode 301 from peeling off from the light-emitting element. The yield and reliability of the light-emitting element are improved.

[0104] Figures 4A to 4C According to the present invention, Figure 1 Different embodiments of the cross section of the light emitting element 1 along the line segment AA'. Figure 4A An enlarged view of the local area R is further shown. The difference between these different embodiments and the first embodiment is that the second central region 501 of the second current blocking region 50 does not have an opening exposing the second semiconductor layer 122 .

[0105] In one embodiment, if Figure 4A As shown, the width of the opening 180 of the transparent conductive layer 18 is smaller than the width of the second central region 501 and larger than the width of the second pad electrode 301. The transparent conductive layer 18 covers the upper surface of the second semiconductor layer 122, the extension region 502 of the second current blocking region 50, and the partial upper surface of the second central region 501. Because the width of the opening 180 of the transparent conductive layer 18 is larger than the width of the second pad electrode 301, the transparent conductive layer 18 does not contact the second pad electrode 301. In one embodiment, the distance D between the edge of the second central region 501 and the opening 180 is between 1 and 10 μm. Since the entire bottom area of the second pad electrode 301 contacts the second central region 501 of the second current blocking region 50, the adhesion between the second pad electrode 301 and the second current blocking region 50 is greater than the adhesion between the second pad electrode 301 and the transparent conductive layer 18, which can prevent the second pad electrode from peeling off from the light emitting element 1. The yield and reliability of the light emitting element 1 are improved. In addition, the transparent conductive layer 18 that is not in contact with the second pad electrode 301 can further prevent the current from passing through the contact between the transparent conductive layer 18 and the second pad electrode 301 and directly flowing into the second semiconductor layer 122 adjacent to the second pad electrode 301; that is, only a small amount of light or no light can be emitted from the semiconductor stack 12 near the second pad electrode 301 so as to be absorbed by the second pad electrode 301, and the current can be used more efficiently.

[0106] In one embodiment, ifFigure 4B As shown, the width of the opening 180 of the transparent conductive layer 18 is substantially equal to the width of the second central region 501. The transparent conductive layer 18 does not contact the top surface of the second central region 501 of the second current blocking region 50. In another embodiment, as Figure 4C shown, the width of the opening 180 of the transparent conductive layer 18 is greater than the width of the second central region 501, and the transparent conductive layer 18 neither contacts the top surface nor the side surface of the second central region 501.

[0107] Figure 5 is a partial top view of the light-emitting element 1 according to different embodiments of the present invention, showing different designs of the second electrode 30 and the second current blocking region 50.

[0108] As Figure 5 shown, the second central region 501 and the second pad electrode 301 have different shapes when viewed from above. The second central region 501 of the second current blocking region 50 includes a plurality of island portions 501a separated from each other by gaps 504. The transparent conductive layer 18 covers the extension region 502 and a part of the second central region 501 of the second current blocking region, and has an opening 180 exposing a part of the top surface of the island portion 501a. In one embodiment, the transparent conductive layer 18 contacts the second semiconductor layer 122 via the gap 504. The second pad electrode 301 is formed on the plurality of island portions 501a and contacts the second semiconductor layer 122 via the gap 504. In one embodiment, the extension region 502 of the second current blocking region 50 is connected to any one of the island portions 501a. In another embodiment, the extension region 502 of the second current blocking region 50 is separated from the second central region 501, and the extension region is not connected to any of the island portions 501a.

[0109] In one embodiment, the second finger electrode 302 includes a first connection portion 3021 extending from the periphery of the second pad electrode 301 and connecting the second pad electrode 301 and another part of the second finger electrode 302. The first connection portion 3021 is formed above the second current blocking region 50 and the transparent conductive layer 18. More specifically, a part of the first connection portion 3021 is formed outside the opening 180 of the transparent conductive layer 18, and another part of the first connection portion 3021 is formed in the opening 180 of the transparent conductive layer 18. The width of the first connection portion 3021 is wider than other parts of the second finger electrode 302. The width of the first connection portion 3021 is smaller than the width of the second pad electrode 301. The first connection portion 3021 of the second finger electrode 302 has a wider width and a larger area, which can allow a higher current to pass through to avoid damage to the light-emitting element caused by electrostatic discharge (ESD) or electrical over stress (EOS).

[0110] Figure 6 Shows a top view of the light-emitting element 2 according to the second embodiment of the present invention.

[0111] As Figure 6 shown, the light-emitting element 2 includes a substrate 10, a semiconductor stack 12 on the substrate 10, first and second current-blocking regions 40 and 50 on the semiconductor stack 12, a transparent conductive layer 18 on the semiconductor stack 12, a first electrode 20, a second electrode 30, and a protective layer (not shown in the figure) having openings exposing the first electrode 20 and the second electrode 30. The structure of the light-emitting element 2 is similar to that of the light-emitting element 1 described in the first embodiment. The first pad electrode 201, the first current-blocking region 40 including a first central region 401 and a plurality of separated island-like portions 402, the second pad electrode 301, the transparent conductive layer 18, and the second current-blocking region 50 including a second central region 501 and an extension region 502 in the above-described embodiment are all applicable to the light-emitting element 2. The differences between the light-emitting element 2 and the light-emitting element 1 will be described below.

[0112] In the present embodiment, the first pad electrode 201 is located at the corner where the first edge E1 and the second edge E2 intersect. The first current-blocking region 40 includes a first central region 401 between the first pad electrode 201 and the first semiconductor layer 121. The first central region 401 has an area larger than that of the first pad electrode 201, such that the first pad electrode 201 does not substantially contact the first semiconductor layer 121.

[0113] The second finger electrode 302 is not parallel to the first finger electrode 202, the first edge E1, and / or the third edge E3. More specifically, the first finger electrode 202 and the second finger electrode 302 each include an overlapping portion, and the overlapping portions of the first finger electrode 202 and the second finger electrode 302 are not parallel. The spacing between the first finger electrode 202 and the second finger electrode 302 varies as the second finger electrode 302 extends in the direction toward the first pad electrode 201. In one embodiment, the spacing of the overlapping portions increases as the second finger electrode 302 extends away from the second pad electrode 301. In one embodiment, as Figure 6 shown, the distance d1 is the shortest distance between the overlapping portions. In one embodiment, the shortest distance d1 is located between the ends of the second finger electrode 302 and the first finger electrode 202. In one embodiment, the distance d2 is the maximum spacing of the overlapping portions. In one embodiment, the distance d3 is the shortest spacing between the end of the second finger electrode 302 and the contour C of the second semiconductor layer 122 S or the shortest spacing between the second finger electrode 302 and the contour C of the second semiconductor layer 122 SThe shortest distance. In one embodiment, the distance d2 is greater than the distance d1, and the distance d2 is greater than the distance d3. In one embodiment, the distance d3 is less than 90 μm. In another embodiment, the distance d2 is greater than half the length of the second edge E2. The second finger electrode 302 and the sub-profile line C of the transparent conductive layer 18 near the first edge E1 T1 The spacing from the sub-profile line C of the transparent conductive layer 18 near the first edge E1 gradually increases as the second finger electrode 302 moves away from the second pad electrode 301.

[0114] Figure 6 The dashed line L2 in the figure represents the tangent of the second pad electrode 301 that is parallel and adjacent to the third edge E3. In one embodiment, the end of the second finger electrode 302 does not extend beyond the dashed line L2. In this way, the end of the second finger electrode 302 will not be too close to the contour C of the second semiconductor layer 122 near the third edge E3 S , so that the current diffusion between the end of the second finger electrode 302 and the second edge E2 and the third edge E3 is as uniform as the current diffusion in other regions of the light-emitting element 2.

[0115] Figure 7 The top view of the light-emitting element 3 showing the third embodiment of the present invention.

[0116] As Figure 7 shown, the light-emitting element 3 includes a substrate 10, a semiconductor stack 12 on the substrate 10, first and second current blocking regions 40 and 50 on the semiconductor stack 12, a transparent conductive layer 18 on the semiconductor stack 12, a first electrode 20, a second electrode 30, and a protective layer (not shown in the figure) having openings exposing the first electrode 20 and the second electrode 30. The structure of the light-emitting element 3 is similar to that of the light-emitting element in the foregoing embodiment. The differences between the light-emitting element 3 and the light-emitting element 2 will be described below.

[0117] In this embodiment, the second finger electrode 302 includes a curve. The second finger electrode 302 is not parallel to the first finger electrode 202, the first edge E1, and / or the third edge E3. More specifically, the overlapping portion of the first finger electrode 202 and the second finger electrode 302 is not parallel. The second finger electrode 302 extends from the second pad electrode 301 and bends toward the third edge E3.

[0118] As Figure 7 shown, the distance d1 is the shortest distance of the overlapping part. In one embodiment, the shortest distance d1 is between the ends of the second finger electrode 302 and the first finger electrode 202. The distance d2 is the maximum distance of the overlapping part. The distance d3 is the shortest distance between the second finger electrode 302 and the contour C of the second semiconductor layer 122 S The shortest distance. The distance d4 is the contour C of the second semiconductor layer 122 parallel to the third edge E3 at the end of the second finger electrode 302 SThe shortest distance. The distance d5 is the shortest distance between the end of the second finger electrode 302 and the first pad electrode 201. The dashed line L2 represents the tangent of the second pad electrode 301 adjacent to and parallel to the third edge E3.

[0119] In one embodiment, the distance d2 is greater than the distance d1, the distance d2 is greater than the distance d3, and the distance d2 is greater than half of the length of the second edge E2. In one embodiment, the distance d3 is less than 90 μm. In another embodiment, the distance d4 is substantially the same as the distance d5, such that the current diffusion in the region between the first pad electrode 201 and the third edge E3 is as uniform as in other regions, such as the region between the first finger electrode 202 and the second finger electrode 302. In another embodiment, the second finger electrode 302 does not extend beyond the dashed line L2. In one embodiment, the bent portion of the second finger electrode 302 does not extend beyond the dashed line L2.

[0120] Figure 8 Showing light-emitting elements A - D according to variations of the present invention. Figure 8 The structure of the light-emitting element in is similar to that in the above embodiment. For the sake of clearly showing the electrode layout, the first and second current blocking regions are not shown in Figure 8 In.

[0121] As Figure 8 In the light-emitting elements A - D of the variation shown, the second finger electrode 302 includes a first portion 302a that does not overlap with the first finger electrode 202 and a second portion 302b that overlaps with the first finger electrode 202. In one embodiment, the first portion 302a of the second finger electrode 302 is parallel to the first finger electrode 202, the first edge E1, and / or the third edge E3. In one embodiment, the first portion 302a of the second finger electrode 302 is not parallel to the first finger electrode 202, the first edge E1, or the third edge E3. In one embodiment, the second portion 302b of the second finger electrode 302 is not parallel to the first finger electrode 202, the first edge E1, and / or the third edge E3.

[0122] In the light-emitting element A, the second portion 302b of the second finger electrode 302 is linear, and the first portion 302a is parallel to the first edge E1. In the variation light-emitting elements B and C, the second portion 302b of the second finger electrode 302 is curved. In the light-emitting element D, the entire second finger electrode 302 is curved. The shortest distance between the end of the second finger electrode 302 and the first finger electrode 202 is greater than the shortest distance between the end of the first finger electrode 202 and the second finger electrode 302.

[0123] Figure 9Schematic diagrams of the top views and near-field emission intensity images of the light-emitting device according to the second embodiment of the present invention and the light-emitting device of the comparative example. The light-emitting elements of the second embodiment and the comparative example have the same size. A current of 20 mA is injected into each light-emitting element respectively to obtain the near-field emission intensity image. The near-field emission intensity image shows the current distribution and current density in the light-emitting element. In order to clearly show the difference in the electrode layout between the two light-emitting elements, the current blocking region and the transparent conductive layer are not shown in Figure 9 In Figure 9 , the shading indicates the distribution of current and brightness, and the darker shading indicates a higher current density and higher brightness in this area. The area with uniform shading indicates that the current in this area of the light-emitting element is uniform.

[0124] As Figure 9 shown, the light-emitting elements in the second embodiment and the comparative example respectively have a pair of finger electrodes and a pair of pad electrodes. The first and second finger electrodes and the pad electrodes are respectively formed on the first semiconductor layer 121 and the second semiconductor layer 122. The first semiconductor layer 121 is an n-type semiconductor, and the second semiconductor layer 122 is a p-type semiconductor. Therefore, the first and second finger electrodes are respectively the n-side finger electrodes formed on the n-type semiconductor and the p-side finger electrodes formed on the p-type semiconductor, and the first and second pad electrodes are respectively the n-side pad electrodes and the p-side pad electrodes. The p-side finger electrode and the n-side finger electrode of the light-emitting element in the comparative example are parallel to each other. In addition, the distance between the contour of the transparent conductive layer (not shown in the figure) and the contour of the second semiconductor layer is substantially fixed. Referring to Figure 9 shown in the comparative example, in the local area near the end of the p-side finger electrode, the brightness and current density are relatively high. On the contrary, in the area between the end of the p-side pad electrode and the n-side finger electrode, the brightness and current density are relatively low. This phenomenon shows that the current tends to accumulate near the end of the p-side finger electrode and the current distribution is uneven.

[0125] Referring to Figure 9 shown in the light-emitting element of the second embodiment of the present invention, the two finger electrodes are not parallel. As in the foregoing embodiment, the area between the end of the first finger electrode and the fourth edge E4 opposite to the first pad electrode is not covered by the transparent conductive layer. In the second embodiment of the present invention, the phenomenon of current accumulation can be suppressed, and the uniformity of current distribution is better than that of the comparative example. Due to the improvement of the uniformity of current distribution, the power of the light-emitting element of the present invention is increased. In addition, the uniform current distribution can reduce the local heating caused by current accumulation, thereby extending the life of the light-emitting element.

[0126] Figure 10 Showing the light-emitting element according to the second embodiment of the present invention, according to Figure 8The optical output power (Po) and forward voltage (Vf) of the light-emitting element A shown and the light-emitting element of the comparative example. In Figure 10 neither the first nor the second current blocking region is shown.

[0127] Referring to Figure 10 , the output power of the light-emitting element of the second embodiment increased by 1.125% compared with the comparative example. Figure 8 The output power of the light-emitting element of the modified example A shown increased by 0.726% compared with the comparative example, and the forward voltage (VF) decreased by 0.025 V.

[0128] Figure 11A Fig. 11 shows a top view of the light-emitting element 4 according to the fourth embodiment of the present invention. Figure 11B Fig. 12 shows a cross-sectional view along the line B-B' of the light-emitting device 4 in Fig. 11. The light-emitting element 4 includes a substrate 10, a semiconductor stack 12 on the substrate 10, a first central region 401 of the first current blocking region and a second current blocking region 50 on the semiconductor stack 12, a transparent conductive layer 18 on the semiconductor stack 12, a first electrode including a first pad electrode 201, a second electrode 30 including a second pad electrode 301 and a second finger electrode 302, and a protective layer (not shown in the figure) having openings exposing the first pad electrode 201 and the second pad electrode 301. The structure of the light-emitting element 4 is similar to that described in the second embodiment. The differences between the light-emitting element 4 and the light-emitting element 2 will be described below.

[0129] The first electrode electrically connected to the first semiconductor layer 121 includes a first pad electrode 201 without a finger electrode extending therefrom. The first pad electrode 201 is located on one side of the second edge E2. One side of the second edge E2 includes multiple embodiments. In one embodiment, the first pad electrode 201 is located on the second edge E2. In one embodiment, the first pad electrode 201 is located at the corner where the first edge E1 intersects the second edge E2. In one embodiment, the first pad electrode 201 is located on the second edge E2 and is adjacent to the corner where the first edge E1 and the second edge E2 intersect. The first central region 401 of the first current blocking region is formed between the first semiconductor layer 121 and the first pad electrode 201. The width of the first central region 401 of the first current blocking region is smaller than the width of the first pad electrode 201. Therefore, as Figure 11B shown, the first pad electrode 201 substantially contacts the first semiconductor layer 121 outside the first central region 401. In one embodiment, the contour of the first pad electrode 201 exceeds the contour of the first central region 401 by more than 2 μm. That is, the distance D between the edge of the first pad electrode 201 and the first central region 401 is greater than 2 μm to ensure sufficient contact area between the first pad electrode 201 and the first semiconductor layer 121. In one embodiment, the distance D is between 2 and 15 μm.

[0130] The first central region 401 of the first current blocking region under the first pad electrode 201 can prevent current from directly injecting into the semiconductor layer under the pad electrode, forcing the current to spread laterally. Another advantage of the light-emitting element with a current blocking region is that the light emitted from the active layer 123 can be extracted through the current blocking region, and the brightness of the light-emitting element can be enhanced. However, a larger blocking region means a smaller contact area between the electrode and the semiconductor stack, which may affect the electrical properties such as the forward voltage (Vf) of the light-emitting element. The design of the area, position, or layout of the current blocking region needs to be balanced based on the brightness and electrical properties of the light-emitting element. As shown in the first embodiment, the light-emitting element 1 having a first central region 401 larger than the area of the first pad electrode 201 is beneficial for brightness improvement. As shown in the fourth embodiment, the semiconductor stack 12 of the light-emitting element 4 has an area smaller than that of the light-emitting element 1 and does not have a first finger electrode. The first central region 401 of the light-emitting element 4 is set to have an area smaller than that of the first pad electrode 201 to increase the contact area between the first semiconductor layer 121 and the first electrode 20, so that the forward voltage (Vf) can be reduced.

[0131] In one embodiment, the second pad electrode 301 is located on one side of the fourth edge E4. One side of the fourth edge E4 includes several embodiments. In one embodiment, the first pad electrode 201 is located on the fourth edge E4. In one embodiment, the first pad electrode 201 is located near the fourth edge E4. The second finger electrode 302 extends from the second pad electrode 301 towards the second edge E2 along a direction not parallel to the first edge E1 and the third edge E3. The distance between the second finger electrode 302 and the first edge E1 increases as the second finger electrode 302 extends away from the second pad electrode 301. The second finger electrode 302 points to the region where the second edge E2 and the third edge E3 intersect. In this way, the distribution of current in the region between the first pad electrode 201 and the third edge E3 can be as uniform as other regions of the light-emitting element 4.

[0132] Figure 12 Show a light-emitting device 6 according to an embodiment of the present invention. Mount the light-emitting element of any of the above embodiments on the first conductive pad 511 and the second conductive pad 512 of the carrier 51. Electrical insulation is achieved between the first conductive pad 511 and the second conductive pad 512 by an insulating portion 53 composed of an insulating material. The light-emitting element is fixed on the carrier 51 in a flip-chip manner, and the surface of the growth substrate opposite to the first electrode and the second electrode is facing up to serve as the light-emitting surface. To increase the light extraction efficiency of the light-emitting element, a reflective structure 54 can be provided around the light-emitting element.

[0133] Figure 13Show the light-emitting device 7 according to another embodiment of the present invention. The light-emitting device 7 is a light bulb, which includes a lamp housing 602, a reflector 604, a light-emitting module 610, a lamp base 612, a radiator 614, a connecting portion 616, and an electrical connection element 618. The light-emitting module 610 includes a carrier portion 606 and a plurality of light-emitting units 608 disposed on the carrier portion 606. The plurality of light-emitting units 608 can be any one of the light-emitting elements or light-emitting devices 6 in the foregoing embodiments.

[0134] However, the above embodiments are only illustrative of the principles and effects of the present invention, rather than limiting the present invention. Any person with ordinary knowledge in the technical field to which the present invention pertains can make modifications and variations to the above embodiments without departing from the technical principles and spirit of the present invention. Therefore, the scope of the claimed rights of the present invention shall be as set forth in the appended claims.

Claims

1. A light-emitting element, comprising: a first edge, a second edge, a third edge, and a fourth edge, wherein the first edge and the third edge are opposite, and the second edge and the fourth edge are opposite; a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed therebetween; an exposed region formed in the semiconductor stack, including a bottom, wherein the bottom includes the upper surface of the first semiconductor layer; a transparent conductive layer located on the second semiconductor layer; a first electrode formed on the first semiconductor layer and electrically connected to the first semiconductor layer, including a first pad electrode; and a second electrode formed on the second semiconductor layer and electrically connected to the second semiconductor layer, including a second pad electrode; wherein when viewed from above: the second semiconductor layer includes a contour, the contour including a first sub-contour and a second sub-contour connected to the first sub-contour; the first sub-contour and the second sub-contour are adjacent to the first edge, and the distance between the first edge and the first sub-contour is greater than the distance between the first edge and the second sub-contour; and wherein the distance between the transparent conductive layer and the first sub-contour is less than the distance between the transparent conductive layer and the second sub-contour.

2. The light-emitting element according to claim 1, wherein the second electrode further includes a second finger electrode extending from the second pad electrode toward the second edge; Among them, the first edge and the third edge are longer than the second edge and the fourth edge; when viewed from above, the second finger electrode is not parallel to the first edge and the third edge, and the distance between the second finger electrode and the first edge increases as the second finger electrode extends away from the second pad electrode.

3. The light-emitting element according to claim 1, wherein the first electrode further includes a first finger electrode extending along the first edge; wherein the upper surface of the second semiconductor layer located between the fourth edge and the end of the first finger electrode is not covered by the transparent conductive layer.

4. The light-emitting element according to claim 1, wherein the second electrode further includes a second finger electrode extending from the second pad electrode toward the second edge; wherein the first electrode further includes a first finger electrode extending along the first edge, and the first finger electrode is not parallel to the second finger electrode.

5. The light-emitting element according to claim 1, wherein the first pad electrode is adjacent to the corner where the first edge intersects the second edge.

6. The light-emitting element according to claim 1, further including a first current blocking region located below the first electrode, including a first central region located below the first pad electrode; wherein the first pad electrode contacts the upper surface of the first semiconductor layer outside the first central region, and the distance D between the edge of the first pad electrode and the first central region is greater than 2 μm.

7. The light-emitting element according to claim 6, wherein the first central region includes an inclined side surface and the first pad electrode covers the inclined side surface.

8. The light-emitting element according to claim 1, further including a first current blocking region located below the first electrode; wherein the first electrode further includes a first finger electrode; the first current blocking region further includes a plurality of island portions located under the first finger electrode; Among them, The exposed area further includes a side surface, and the shortest distance between the side surface and the plurality of island portions is not less than 1 μm.

9. The light-emitting element according to claim 8, wherein one of the plurality of island portions has a rounded corner or a rounded edge.

10. The light-emitting element according to claim 8, wherein the plurality of island portions includes a first island closest to the end of the first finger electrode, and the distance between the first island and the end of the first finger electrode is greater than the shortest distance between any two adjacent island portions among the plurality of island portions.

11. The light-emitting element according to claim 1, further comprising: A second current blocking region located between the second electrode and the second semiconductor layer, and the second current blocking region includes a second central region located under the second pad electrode; Wherein the transparent conductive layer includes an opening; Wherein the width of the opening is greater than the width of the second pad electrode.

12. The light-emitting element according to claim 1, further comprising: A second current blocking region located between the second electrode and the second semiconductor layer, and the second current blocking region includes a second central region located under the second pad electrode; Wherein the second central region includes a plurality of island portions and / or the second central region and the second pad electrode have different shapes when viewed from above.

13. The light-emitting element according to claim 11, wherein the distance between the edge of the second central region and the opening is between 1 and 10 μm.

14. The light-emitting element according to claim 1, wherein the second electrode further includes a second finger electrode extending from the second pad electrode; The light-emitting element further comprises: A second current blocking region located between the second electrode and the second semiconductor layer, and the second current blocking region includes a second central region located under the second pad electrode and an extending region located under the second finger electrode, wherein the extending region is separated from the second central region.

15. The light-emitting element according to claim 1, wherein the second electrode further includes a second finger electrode extending from the second pad electrode; Wherein the first electrode further includes a first finger electrode extending along the first edge; When viewed from above, the first finger electrode includes a first overlapping portion overlapping with the second finger electrode, the second finger electrode includes a second overlapping portion overlapping with the first finger electrode and a non-overlapping portion not overlapping with the first finger electrode; Wherein the length of the second overlapping portion is greater than the length of the non-overlapping portion, and the first overlapping portion is not parallel to the second overlapping portion.

Images