Etching apparatus using etching chamber

Abstract

The present invention relates to an etching device using an etching chamber, which comprises: an etching liquid storage chamber, which stores etching liquid; a connecting part, which is connected to the etching liquid storage chamber; an etching chamber, which is connected to the etching liquid storage chamber through the connecting part to etch a target object; and a pressurization maintaining part, which maintains at least one of the etching liquid storage chamber and the etching chamber in a pressurized atmosphere.

Description

Technical Field

[0001] The present invention relates to an etching device using an etching chamber, and more particularly, to an etching device using an etching chamber capable of improving etching performance. Background Art

[0002] Silicon nitride film is used as a representative insulating film in semiconductor manufacturing processes. Silicon nitride film forms a structure in contact with silicon oxide film, polysilicon film, silicon wafer surface, etc. It is deposited by CVD (Chemical vapor deposition) process and removed by dry etching and wet etching.

[0003] Dry etching mainly adds fluorine gas and inert gas, etc., and is carried out in a vacuum state. The equipment used to perform dry etching is expensive, so there are limits in commercial application. Therefore, wet etching using phosphoric acid is more widely used than dry etching. Specifically, wet etching is to selectively etch the desired object layer in the object body (substrate, etc.) by means of the chemical reaction of the etching solution. It can be operated by simply mixing and forming an etching solution with a matching ratio according to the required characteristics or etching degree, providing a further improved operation compatibility than dry etching. In addition, a large number of objects can be processed at one time, and the price of the device is low. However, when wet etching is carried out, due to the vaporization of part of the etching solution, the temperature of the object body will drop due to the heat of vaporization, and due to the vaporization of the etching solution, the concentration of the etching solution is difficult to control, resulting in CD loss. Therefore, in order to maintain the concentration of the etching solution fixedly, a large amount of deionized water and etching solution are currently put into the etching tank to perform the etching of the object body, but at this time, due to the large amount of deionized water and etching solution, the economic loss is large.

[0004] Therefore, during the research for maintaining the concentration of the etching solution at a fixed level, the inventors found that when the etching solution storage chamber and / or the etching chamber is pressurized, the etching solution can be prevented from vaporizing and the concentration of the etching solution can be maintained at a fixed level, thereby significantly improving the selectivity of the silicon nitride film to the silicon oxide film, thereby completing the present invention.

[0005] In connection with this, Korean Patent No. 10-0691479 (grant publication date: March 12, 2007) discloses an etching apparatus for a large-area substrate. Summary of the invention

[0006] [Technical issues]

[0007] The invention provides an etching device using an etching chamber which can improve etching performance.

[0008] [Technical solution]

[0009] The etching device using the etching chamber of the present invention comprises: an etching liquid storage chamber, which stores etching liquid; a connecting part, which is connected to the etching liquid storage chamber; an etching chamber, which is connected to the etching liquid storage chamber through the connecting part to etch a target object; and a pressurization maintaining part, which maintains at least one of the etching liquid storage chamber and the etching chamber in a pressurized atmosphere.

[0010] In addition, the pressure maintaining part may include at least one of a first pressure maintaining part that adjusts the pressure of the etching solution storage chamber and a second pressure maintaining part that adjusts the pressure of the etching chamber.

[0011] In addition, the first pressurizing maintaining unit may include: a first pressurizing unit, which maintains the etching liquid storage chamber at a set pressure; a temperature control unit, which controls the temperature inside the etching liquid storage chamber; and a first exhaust unit, which exhausts the gas inside the etching liquid storage chamber to the outside.

[0012] In addition, the second pressurizing unit may include: a second pressurizing unit that maintains the etching chamber at a set pressure; and a second exhaust unit that exhausts gas inside the etching chamber to the outside.

[0013] In addition, the second exhaust portion can exhaust the gas inside the etching chamber to the outside to generate a pressure difference with the inside of the etching solution storage chamber.

[0014] In addition, the connecting part may include: an etching liquid moving part, which moves the etching liquid from the etching liquid storage chamber to the etching chamber; a selective cutting part, which is configured at the etching liquid moving part and selectively cuts off the etching liquid moving part; and an etching liquid supply part, which promotes the movement of the etching liquid.

[0015] In addition, the etching chamber may include: a bracket on which the target object is mounted; and an etching performance improving unit, which is disposed on the bracket and improves the etching performance of the object.

[0016] In addition, the etching chamber may include a cup having a receiving portion formed therein, and the bracket may be rotatably arranged on an upper portion of the cup.

[0017] In addition, the etching chamber may include: a first chamber in which the cup portion is arranged in an internal pressure chamber; and a second chamber which is openably and closably arranged on one side of the first chamber and has an etching liquid inlet formed therein to supply the etching liquid to the interior.

[0018] In addition, the cup portion may include a bracket mounted on the bottom surface of the pressure chamber.

[0019] In addition, a rotation shaft may be provided at the lower portion of the bracket, the rotation shaft forming a vertical rotation center and transmitting a rotational driving force from the rotational driving unit.

[0020] In addition, the rotating shaft may vertically penetrate the first connecting portion of the first chamber, and may include a first sealing member inserted into the first connecting portion to surround the rotating shaft in a rotating direction in a close contact state.

[0021] Furthermore, the first sealing member may include a first rib portion that protrudes from the inner peripheral surface and is in close contact with the radial direction of the rotating shaft at an angle, and at least one of the first rib portions is arranged in the up-down direction.

[0022] In addition, the etching performance improving portion may be arranged in a recessed manner so that the object body can be installed in an inserted state and immersed in the etching solution.

[0023] In addition, the etching performance improvement portion may include: a mounting surface formed along an edge to mount the object; and a step formed along the edge of the mounting surface to accommodate the etching liquid on the upper portion of the object.

[0024] In addition, the bracket may include a passage extending vertically therethrough.

[0025] In addition, a lifting unit for lifting the object may be further provided. When the lifting unit is lifted, the object may be located on the upper part of the bracket, and when the lifting unit is lowered, the object may be mounted on the etching performance improving unit.

[0026] In addition, the lifting part may include: a main body that can be lifted and lowered at the lower part of the cup part; and a support pin that protrudes from the upper part of the main body and can be lifted and lowered through the channel to support the lower part of the object body.

[0027] Furthermore, the main body may include a lift pin for transmitting the lift driving force from the lift driving unit.

[0028] In addition, the lift pin may vertically penetrate the second connection portion of the first chamber and may include a second sealing member protruding toward the lower portion of the body and inserted into the second connection portion to tightly surround the lift pin in the width direction.

[0029] Furthermore, the second sealing member may include a second rib portion that protrudes from the inner peripheral surface and is in close contact with the width direction of the lift pin at an angle, and at least one of the second rib portions is arranged in the up-and-down direction.

[0030] In addition, the etching chamber may include a cleaning unit for cleaning the etching solution after the etching is completed.

[0031] In addition, the cleaning part may include: a supply line connected to the inside of the etching chamber; and a cleaning water supply part that supplies cleaning water through the supply line.

[0032] In addition, the etching liquid storage chamber and the etching chamber may be arranged to communicate with the inside of the etching processing section which is sealed from the outside, and the inside of the etching processing section may be maintained in a pressurized atmosphere.

[0033] In addition, the pressurized atmosphere may be maintained at 0.1 Pa to 10 Pa, and the etching chamber may include a discharge portion for discharging the etching liquid supplied inside to the outside.

[0034] In addition, the etching device using the etching chamber may further include a storage unit for storing the object body, which can continuously move the object bodies that have not been etched to the etching chamber one by one to perform etching, and continuously move the object bodies that have finished etching to the outside of the etching chamber.

[0035] In addition, the etching chamber may be a batch type in which a plurality of the objects are arranged and etched simultaneously, or the etching chamber may be a single chip type in which the etching liquid is sprayed onto the upper part of the object and then etched.

[0036] In addition, the etching solution can selectively use at least one of HF, NHO3, H2O2, IPA, NH4OH, H2O, H3PO4, H2SO4, or a mixture of more than one of them.

[0037] [Effects of the invention]

[0038] The etching device using the etching chamber of the present invention pressurizes the etching liquid storage chamber and / or the etching chamber, thereby preventing the etching liquid from vaporizing and keeping the concentration of the etching liquid constant, thereby significantly improving the etching selectivity.

[0039] In addition, the concentration of the etching solution of the present invention is kept fixed due to the pressurization, so there is no need for additional deionized water and etching solution to maintain the concentration of the etching solution, which can improve the product yield and reduce the consumption of the etching solution. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 FIG. 1 is a diagram showing an etching apparatus using an etching chamber according to an embodiment of the present invention.

[0041] Figure 2 This is a diagram for illustrating a state in which an etching chamber of an etching apparatus using the etching chamber is used as a single wafer according to another embodiment of the present invention.

[0042] Figure 3 Is used to display Figure 2A diagram showing a state in which an etching processing unit is applied in an etching apparatus using an etching chamber.

[0043] Figure 4 This is a diagram for illustrating a state where an etching chamber of an etching apparatus using the etching chamber according to another embodiment of the present invention is used as a batch type.

[0044] Figure 5 Is used to display Figure 4 A diagram showing a state in which an etching processing unit is applied in an etching apparatus using an etching chamber.

[0045] Figure 6 It is a perspective view showing an etching device using an etching chamber according to another embodiment of the present invention.

[0046] Figure 7 Is used to display Figure 6 A bottom perspective view of an etching apparatus utilizing an etching chamber.

[0047] Figure 8 Is used to display Figure 6 A front cross-sectional view of an etching apparatus utilizing an etching chamber.

[0048] Fig. 9 Is used to display Figure 6 A side cross-sectional view of an etching apparatus utilizing an etching chamber.

[0049] Fig.10 Is used to display Figure 6 A perspective view of a bracket of an etching apparatus utilizing an etching chamber.

[0050] Fig.11 Is used to display Figure 6 A three-dimensional view of a lifting portion of an etching device utilizing an etching chamber. DETAILED DESCRIPTION

[0051] The present invention will be described in more detail below. However, the present invention can be embodied in a variety of different forms, and the present invention is not limited by the embodiments described herein, but is only defined by the claims described below. Moreover, the terms used in this article are used only to illustrate specific embodiments and are not intended to limit the meaning of the present invention. Unless otherwise clearly indicated in the text, the expression in the singular includes the expression in the plural. Throughout the specification, the so-called "including" a certain constituent element does not mean to exclude other constituent elements unless there is a special record to the contrary, but means that other constituent elements may be further included.

[0052] Figure 1 1 is a diagram for illustrating an etching apparatus using an etching chamber according to an embodiment of the present invention. Figure 2FIG. 1 is a diagram for showing a state in which an etching chamber of an etching device using an etching chamber is used as a single wafer according to another embodiment of the present invention. Figure 3 Is used to display Figure 2 A diagram showing a state in which an etching processing unit is applied in an etching apparatus using an etching chamber.

[0053] Figure 4 FIG. 1 is a diagram for showing a state in which an etching chamber of an etching device using an etching chamber is used as a batch type according to another embodiment of the present invention. Figure 5 Is used to display Figure 4 A diagram showing a state in which an etching processing unit is applied in an etching apparatus using an etching chamber.

[0054] Figure 6 is a perspective view of an etching device using an etching chamber according to another embodiment of the present invention. Figure 7 Is used to display Figure 6 A bottom perspective view of an etching apparatus using an etching chamber, Figure 8 Is used to display Figure 6 A front cross-sectional view of an etching apparatus utilizing an etching chamber.

[0055] Fig. 9 Is used to display Figure 6 A side cross-sectional view of an etching apparatus using an etching chamber, Fig.10 Is used to display Figure 6 A perspective view of a bracket of an etching apparatus using an etching chamber, Fig.11 Is used to display Figure 6 A three-dimensional view of a lifting portion of an etching device utilizing an etching chamber.

[0056] like Figure 1 As shown, an etching device 100 using an etching chamber according to an embodiment of the present invention includes an etching liquid storage chamber 110, a connecting portion 120, an etching chamber 130 and a pressurization maintaining portion.

[0057] First, the etching liquid storage chamber 110 stores the etching liquid L, and an etching liquid containing space is formed inside the etching liquid storage chamber 110. The etching liquid storage chamber 110 can be made of metal (stainless steel, etc.), and another material (polytetrafluoroethylene, etc.) can be coated inside the etching liquid storage chamber 110.

[0058] One end of the connection part 120 is connected to the inside of the etching liquid storage chamber 110, and the other end is connected to the inside of the etching chamber 130 described later. During the etching process, the etching liquid L moves through the connection part 120. The connection part 120 can include: an etching liquid moving part 121, which moves the etching liquid L from the etching liquid storage chamber 110 to the etching chamber 130 described later; a selective cutting part 122, which is arranged on the etching liquid moving part 121 and selectively cuts off the etching liquid moving part 121; and an etching liquid supply part 123, which promotes the movement of the etching liquid L.

[0059] The etching chamber 130 is connected to the etching liquid storage chamber 110 through the connection part 120, and a storage space for the etching object (substrate, etc.) W is formed inside the etching chamber 130. A bracket 131 can be arranged inside the etching chamber 130, and an etching performance improvement part for improving the etching performance of the object W can be formed on the upper part of the bracket 131.

[0060] The bracket 131 has the object W mounted on the upper portion and is horizontally rotatably mounted inside the etching chamber 130 . The bracket 131 can be rotated at a predetermined speed by a driving force of a driving unit (not shown).

[0061] The etching performance improving portion is used to improve the etching performance of the object W formed on the upper part of the bracket 131, and the etching performance improving portion can be formed protrudingly at the upper end of the bracket 131. If described in more detail, the etching performance improving portion can be formed along the four sides of the bracket 131, and the etching performance improving portion can protrude toward the upper part of the bracket 131. The etching performance improving portion can be formed with a width thicker than the upper and lower thicknesses of the object W. Such an etching performance improving portion forms a accommodating space at the upper part of the bracket 131, so that the position of the object W installed on the upper part of the bracket 131 can be lower than the upper end of the etching performance improving portion.

[0062] In this state, when the etching liquid L is supplied to the upper portion of the bracket 131 , the etching liquid L is contained in the containing space formed by the etching performance improving portion, and the etching object W can be etched while being immersed in the etching liquid L having a predetermined water level.

[0063] In addition, the etching chamber 130 may also include a discharge portion (not shown in the figure) for discharging the etching liquid L supplied to the inside to the outside. The discharge portion may include a discharge pipeline connected to the inside of the etching chamber 130 and a discharge drive portion connected to the discharge pipeline for providing discharge pressure.

[0064] Furthermore, a meter for displaying information for displaying internal pressure, temperature, etc. to the outside may be installed outside the etching chamber 130 and the etching solution storage chamber 110 .

[0065] Moreover, the etching chamber 130 may be provided with a cleaning unit 160 for cleaning the etching liquid L after etching is completed. The cleaning unit 160 may include a supply line 161 connected to the inside of the etching chamber 130 and a cleaning water supply unit 162 for supplying cleaning water L through the supply line 161 .

[0066] In addition, the etching apparatus using the etching chamber according to an embodiment of the present invention may further include a storage unit for storing the object W (not shown in the figure).

[0067] The storage unit may continuously move the objects W that have not been etched to the etching chamber 130 one by one to perform etching, and continuously move the objects W that have been etched to the outside of the etching chamber 130 .

[0068] Also, the etching chamber 130 may have a batch type structure in which a plurality of objects W are disposed and etched simultaneously, or a monolithic type structure in which the etching liquid L is sprayed onto the upper portion of the object W and etched.

[0069] The pressurization maintaining unit is used to maintain at least one of the etching liquid storage chamber 110 and the etching chamber 130 in a pressurized atmosphere during the etching process, and may include at least one of a first pressurization maintaining unit for adjusting the pressure of the etching liquid storage chamber 110 and a second pressurization maintaining unit for adjusting the pressure of the etching chamber 130.

[0070] At this time, the first pressurization maintaining unit is Figure 1 As shown, the first pressurizing unit 141 can be provided to maintain the etching liquid storage chamber 110 at a set pressure; the temperature control unit 142 can control the temperature inside the etching liquid storage chamber 110; and the first exhaust unit 143 can exhaust the gas (air, etc.) inside the etching liquid storage chamber 110 to the outside. The first pressurizing unit 141 has a structure capable of supplying compressed gas to the inside of the etching liquid storage chamber 110, and the temperature control unit 142 has a structure capable of increasing the internal temperature of the etching liquid storage chamber 110.

[0071] The first pressurizing part 141 may have a pressure regulating function to maintain the internal pressure of the etching chamber 130 at a set processing pressure. To this end, a pressure sensing device (not shown in the figure) for measuring the internal pressure of the etching liquid storage chamber 110 may be electrically connected to the first pressurizing part 141.

[0072] In addition, the temperature control unit 142 may have a temperature adjustment function so that the internal pressure maintains the set processing temperature. For this purpose, a temperature sensing device (not shown in the figure) for measuring the internal temperature of the etching liquid storage chamber 110 may be electrically connected to the temperature control unit 142. As an example, the temperature control unit 142 may include a heating component 142a installed in the internal space of the etching liquid storage chamber 110 and a power supply unit (not shown in the figure) for connecting power to the heating component 142a. At this time, a container for containing the etching liquid L may be arranged inside the etching liquid storage chamber 110, and the heating component 142a may be installed in a state of being connected to the outside of the container.

[0073] The second pressurizing unit may include a second pressurizing unit 151 for maintaining the etching chamber 130 at a set pressure, and a second exhaust unit 152 for exhausting gas inside the etching chamber 130 to the outside.

[0074] The second pressurizing unit 151 may have a structure for supplying compressed gas into the etching chamber 130 , and may have a pressure regulating function to maintain the internal pressure of the etching chamber 130 at a set processing pressure.

[0075] The first pressurizing part 141 may have a pressure regulating function to maintain the internal pressure of the etching chamber 130 at a set processing pressure. To this end, a pressure sensing device (not shown in the figure) for measuring the internal pressure of the etching liquid storage chamber 110 may be electrically connected to the first pressurizing part 141.

[0076] In addition, the temperature control unit 142 may have a temperature adjustment function to maintain the internal pressure at a set processing temperature. To this end, a temperature sensing device (not shown in the figure) for measuring the internal temperature of the etching liquid storage chamber 110 may be connected to the temperature control unit 142.

[0077] During the etching process, the second exhaust portion 152 can exhaust the gas inside the etching chamber 130 to the outside, thereby generating a pressure difference with the inside of the etching solution storage chamber 110 .

[0078] During the etching process, the pressurization maintaining unit can form a pressurized atmosphere inside the etching liquid storage chamber 110 and the etching chamber 130. At this time, the pressurized atmosphere can be maintained at 0.1 Pa to 10 Pa.

[0079] On the other hand, the etching liquid storage chamber 110 and the etching chamber 130 may be arranged to communicate with the inside of the etching processing unit that is sealed from the outside, and the inside of the etching processing unit may be maintained in a pressurized atmosphere.

[0080] Refer to the following Figure 1, illustrating the operation of an etching device using an etching chamber according to one embodiment of the present invention.

[0081] First, the first pressurizing unit 141 and the temperature control unit 142 are driven to pressurize the interior of the etching liquid storage chamber 110 containing the etching liquid L to a set processing pressure while maintaining the processing temperature.

[0082] As described above, in the process of raising the temperature inside the etching liquid storage chamber 110 to a set processing temperature, the first exhaust unit 143 may be driven to exhaust the gas inside the etching liquid storage chamber 110 to the outside.

[0083] Then, the second pressurizing unit 151 is driven to pressurize the interior of the etching chamber 130 where the object W is placed to a set processing pressure, so that the internal pressure of the etching chamber 130 is the same as the internal pressure of the etching solution storage chamber 110 .

[0084] When the internal pressure of the etching liquid storage chamber 110 and the etching chamber 130 reaches the set pressure, the selective cut-off portion 122 of the etching liquid moving portion 121 is opened, and the etching liquid moving portion 121 is opened. At this time, due to the opening of the etching liquid moving portion 121, the interior of the etching liquid storage chamber 110 and the interior of the etching chamber 130 are connected to each other, and the second exhaust portion 152 is driven to exhaust the internal gas of the etching chamber 130 to the outside. In this process, due to the exhaust operation of the second exhaust portion 152, a pressure difference occurs between the interior of the etching liquid storage chamber 110 and the interior of the etching chamber 130. Due to the pressure difference, the etching liquid L contained in the etching liquid storage chamber 110 flows into the interior of the etching chamber 130 through the etching liquid moving portion 121 and etches the object W.

[0085] Figure 2 FIG. 1 is a diagram for showing a state in which an etching chamber of an etching device using an etching chamber is used as a single wafer according to another embodiment of the present invention. Figure 3 Is used to display Figure 2 A diagram showing a state of an etching process unit in an etching apparatus using an etching chamber, Figure 4 FIG. 1 is a diagram for showing a state in which an etching chamber of an etching device using an etching chamber is used as a batch type according to another embodiment of the present invention. Figure 5 Is used to display Figure 4 A diagram showing a state in which an etching processing unit is applied in an etching apparatus using an etching chamber.

[0086] Refer to the following Figures 2 to 5 , describing an etching device utilizing an etching chamber according to another embodiment of the present invention.

[0087] The invention includes an etching liquid storage chamber 300 for storing etching liquid L and a single wafer or batch etching chamber 400 for performing etching of an etching object W. The etching liquid storage chamber 300 and the etching chamber 400 are connected to each other so that the etching liquid L can move, but are sealed from the outside. When etching the object W, the interior of at least one of the etching liquid storage chamber 300 and the etching chamber 400 can be maintained in a pressurized atmosphere.

[0088] Figure 2 The etching apparatus 100 is schematically shown without the etching processing unit 200. Figure 3 The etching apparatus 100 including the etching processing unit 200 using an etching chamber is schematically shown.

[0089] First, refer to Figure 2 , the etching apparatus using the etching chamber without the etching processing unit 200 is described. However, Figure 2 The etching apparatus 100 using the etching chamber is merely an exemplary embodiment, and the etching apparatus 100 using the etching chamber without the etching processing unit 200 is not limited to Figure 2 The form shown.

[0090] In one embodiment of the present invention, an etching device using an etching chamber may include an etching liquid storage chamber 300 for storing etching liquid L and a single-chip etching chamber 400 for performing etching of an object W. In this case, the etching liquid storage chamber 300 and the etching chamber 400 may be connected to each other so that the etching liquid L can move, and may be sealed from the outside. On the other hand, the connection may be through a connecting portion 500. In this case, the connecting portion 500 is not limited as long as it is in a form that allows the etching liquid L to move. The etching liquid storage chamber 300 and the etching chamber 400 may be in close contact, and a portion of the close contact surface may be connected by opening and closing. Preferably, it may also be as follows Figure 3 At this time, when the connection part 500 has a piping form, a valve can be installed on the piping to easily control the movement of the etching liquid L.

[0091] In addition, the outside may refer to all spaces except the inside of the etching liquid storage chamber 300 and the etching chamber 400, and there is no limitation on the sealed form with the outside, but it is preferably as follows: Figure 3 As shown, the etching liquid storage chamber 300 and the etching chamber 400 are respectively sealed from the outside.

[0092] In one embodiment of the present invention, the etching device 100 using the etching chamber without the etching processing unit 200 can pressurize the etching liquid storage chamber 300 and / or the etching chamber 400 respectively. At this time, in order to pressurize, the etching device 100 using the etching chamber can further include a pressurizing unit 700 and an exhaust unit 800 for exhausting the pressurized air. At this time, the pressurizing unit 700 and the exhaust unit 800 can be connected to the etching liquid storage chamber 300 and the etching chamber 400 respectively, and the connection can preferably be connected through a pipe, and a valve is installed on the pipe, so that the pressurization degree can be easily controlled.

[0093] Then, refer to Figure 3 , an etching apparatus 100 using an etching chamber including an etching processing unit 200 is described. However, Figure 3 The etching apparatus 100 using the etching chamber is merely an exemplary embodiment, and the etching apparatus 100 using the etching chamber including the etching processing unit 200 is not limited to the embodiment shown in FIG. Figure 3 The form shown.

[0094] The following detailed description of the parts that are repeated in the etching device 100 using an etching chamber but not including the etching processing unit 200 is omitted, and the above-mentioned contents can be applied in the same manner even if the description is omitted in the etching device 100 using an etching chamber but not including the etching processing unit 200.

[0095] In one embodiment of the present invention, the etching apparatus 100 using the etching chamber may further include an etching processing unit 200 sealed from the outside and accommodating an etching liquid storage chamber 300 and an etching chamber 400. At this time, the etching liquid storage chamber 300 and the etching chamber 400 may be open on one side, and when the object W is etched, the entire interior of the etching processing unit 200 may be maintained in a pressurized atmosphere.

[0096] In one embodiment of the present invention, in order to pressurize, the etching device 100 using the etching chamber may further include a pressurizing unit 700 and an exhaust unit 800 for exhausting the pressurized air. At this time, the pressurizing unit 700 and the exhaust unit 800 may be connected to the etching processing unit 200, respectively, and the connection may preferably be connected through a pipe, and a valve is installed on the pipe, so that the pressurization degree can be easily controlled. That is, in terms of the etching device 100 using the etching chamber including the etching processing unit 200, the etching liquid storage chamber 300 and the etching chamber 400 are accommodated in the etching processing unit 200 and formed as a system, and have a structure that pressurizes the entire interior of the etching processing unit 200. Therefore, in order to pressurize the etching liquid L, one side of the etching liquid storage chamber 300 and the etching chamber 400 may be open.

[0097] On the other hand, the etching liquid L has the property of liquid, and thus preferably, the etching liquid storage chamber 300 and the etching chamber 400 may be in a form of an open top.

[0098] Hereinafter, the contents applicable to both the etching apparatus 100 using an etching chamber without the etching processing part 200 and the etching apparatus 100 using an etching chamber including the etching processing part 200 will be described in detail.

[0099] In one embodiment of the present invention, the etching device 100 using the etching chamber can move the etching liquid L stored in the etching liquid storage chamber 300 to the etching chamber 400, and perform etching of the object W inside the etching chamber 400. That is, although the etching liquid L can also move in both directions to the etching liquid storage chamber 300 and the etching chamber 400, it is preferably possible to move unidirectionally from the etching liquid storage chamber 300 to the etching chamber 400. On the other hand, the etching chamber 400 can be as Figure 2 and Figure 3 As shown, as a single-chip type, the etching liquid is sprayed onto the upper part of the target object W to etch the target object W. Specifically, the etching device 100 using the etching chamber further includes a storage unit (not shown in the figure) for storing the object body W, so that the unetched object bodies W stored in the storage unit can be continuously moved one by one to the etching chamber 400 for etching, and at the same time, the object bodies W that have been etched are continuously moved to the outside of the etching chamber 400 and stored separately. At this time, the object body W is as shown in FIG. Figure 2 and 3 As shown, it can be in the form of a bracket 410 installed in the etching chamber 400, and the bracket 410 rotates so that the etching liquid L sprayed from the top is evenly sprayed to the object W, which can improve the etching efficiency. At this time, the rotation speed can be 100rpm to 2000rpm, preferably, it can be 100rpm to 200rpm.

[0100] As for the bracket 410 of one embodiment of the present invention, the object W can be mounted on a support pin (not shown in the figure) and then fixed (clamped) by a chuck (not shown in the figure).

[0101] On the other hand, the etching chamber 400 can be as Figure 4 and Figure 5 As shown in FIG. 1 , multiple target objects W are etched simultaneously as a batch method. Specifically, multiple objects W are Figure 5 and Figure 6 As shown, the bracket 410 may be placed in the etching chamber 400 , and the etching liquid L may be filled to a level higher than the height of the plurality of objects W placed on the bracket 410 to perform etching.

[0102] In one embodiment of the present invention, the etching apparatus 100 using the etching chamber may be maintained in a pressurized atmosphere when performing etching of the object W. At this time, the pressurized atmosphere may be maintained at a pressure of 0.1 Pa to 10 Pa.

[0103] As described above, by maintaining the inside of the etching apparatus 100 using the etching chamber in a pressurized atmosphere, the evaporation phenomenon of the etching liquid L can be prevented (the evaporation of water and / or additives contained in the etching liquid is prevented), and thus the concentration of the etching liquid L can be kept constant, thereby significantly improving the etching selectivity of the object W. At this time, the etching selectivity can be expressed as a ratio of the etching rate of the film to be etched to the etching rate of the film not to be etched among the films formed on the object W, for example, in the case of a silicon nitride film etching process which is one of the main processes for manufacturing semiconductor wafers, it can be expressed as a ratio of the etching rate of the silicon nitride film to the etching rate of the silicon oxide film.

[0104] Generally, phosphoric acid and phosphoric acid compositions that impart properties to phosphoric acid are mainly used when etching silicon nitride films. Phosphoric acid and phosphoric acid compositions are characterized in that they etch silicon nitride films well under specific conditions, but have a significantly lower etching rate for silicon oxide films formed on the sides and underside of the silicon nitride films.

[0105] The main factor that expresses this etching selectivity ratio may be, for example, water contained together with phosphoric acid as the main component in ordinary phosphoric acid. In the phosphoric acid composition, in addition to phosphoric acid and water as the main components, for example, Si series or Si-containing additives and low molecular weight glycol series silicon oxide film etching inhibitors or ammonium salt series hydrated (hydrous) silica dissolving agents may be used as main additive components.

[0106] However, in addition to pure phosphoric acid and Si-based additives as inorganic components, water, low molecular weight silicon oxide film etching inhibitors, hydrated silicon dioxide dissolving agents, etc., all have the characteristic of being easily vaporized under high temperature conditions. Therefore, during the long-term (more than 1 minute) etching process under high temperature (more than 100°C) conditions, there is a problem of vaporization of the components contained in the composition, which changes the characteristics of the etching solution. In order to solve this problem, the device for removing silicon nitride film is designed to continuously replenish vaporized water in a storage box or an embedded heating device for heating the chemical solution or in a chamber where etching occurs, or to continuously replenish new liquid.

[0107] Therefore, if the storage of the etching solution or the etching process conditions are not well managed, the defective rate of the product will increase. In order to avoid this, if the usage amount is increased, the consumption of the etching solution will increase, resulting in a problem of rising unit price of the product.

[0108] On the other hand, during the high-temperature etching process, if the storage box for the heated (preheated) etching liquid or the etching chamber 400 where the actual etching occurs is pressurized, the concentration of the etching liquid L is maintained constant due to the pressurization, so the characteristics of the etching liquid L remain unchanged, which can reduce the defect rate of the corresponding process. There is no need to invest in deionized water and etching liquid that were previously invested in order to maintain the concentration, which can greatly save costs in terms of economy.

[0109] In one embodiment of the present invention, when the pressurized atmosphere is maintained at a pressure of less than 0.1 Pa, the pressure is too low to prevent the vaporization of the etching liquid L as described above. When the pressure is maintained at a pressure exceeding 10 Pa, the pressure is too high, making it difficult to construct the equipment, and the etching characteristics are easily changed due to slight pressure differences, which is not economical.

[0110] In one embodiment of the present invention, the etching apparatus 100 using the etching chamber may further include a temperature control unit 600 for controlling the temperature of the etching liquid L inside the etching liquid storage chamber 300 .

[0111] The temperature control unit 600 may be a heating device for heating the etching liquid L or a cooling device for cooling. As long as it is a device capable of controlling the temperature of the etching liquid L inside the etching liquid storage chamber 300, there is no limitation. It may be a device for maintaining a suitable temperature according to the type of etching liquid L. Moreover, the temperature control unit 600 may also control the temperature inside the etching chamber 400. In this case, one temperature control unit 600 may control the temperature of both the etching liquid storage chamber 300 and the etching chamber 400, or a temperature control unit 600 may be independently installed in each chamber 300, 400. That is, the temperature of the etching liquid L inside the etching liquid storage chamber 300 is preheated or cooled by using the etching device 100 of the etching chamber, so that it can be sprayed into the etching chamber 400 immediately, which can shorten the process time and can be a continuous process.

[0112] In one embodiment of the present invention, when the etching solution L is a silicon nitride film etching solution containing phosphoric acid, the temperature can be controlled at 150°C to 250°C, preferably, it can be controlled at 150°C to 210°C. When the temperature exceeds this range and is controlled at less than 150°C, the etching rate of the silicon nitride film and the silicon oxide film is low, and it is difficult to confirm the effect. When the temperature is controlled to exceed 250°C (preferably 210°C), the etching rate of the silicon nitride film and the silicon oxide film is extremely increased, and the vapor pressure of the vaporized water is high, which makes it difficult to confirm the effect. However, although the silicon nitride film etching solution is used as an example above, it is not limited to this. When other etching solutions are used, they can be controlled at a temperature consistent with it. The etching solution L of one embodiment of the present invention can selectively use at least one of HF, NHO3, H2O2, IPA, NH4OH, H2O, H3PO4, H2SO4, or a mixture of more than one.

[0113] In one embodiment of the present invention, the etching device 100 using the etching chamber may further include a discharge portion (not shown in the figure) for discharging the etching liquid L at the lower part of the etching chamber 400. The discharge portion is used to discharge the etching liquid L in the etching chamber 400 to the outside after the etching is completed. If the etching liquid L is discharged to the outside, there is no limitation, and preferably, it can be discharged through a pipe.

[0114] In addition, the discharge unit may be installed at the lower part of the etching liquid storage chamber 300. This is because after the etching is completed, there will be residual etching liquid L in the etching liquid storage chamber 300, and this is to discharge it to the outside.

[0115] In one embodiment of the present invention, the etching device 100 utilizing an etching chamber may further include a cleaning liquid storage chamber (not shown in the figure), which stores a cleaning liquid L for cleaning the interior of the etching chamber 400, and the cleaning liquid storage chamber may be connected to the etching chamber 400.

[0116] The cleaning liquid storage chamber is used to store the cleaning liquid required for cleaning the inside of the etching chamber 400 after the etching is completed. Preferably, if the etching is completed, the etching liquid L stored in the etching chamber 400 is discharged to the outside, and then the cleaning liquid can be put into the etching chamber 400 for cleaning. At this time, as far as the cleaning liquid is concerned, there is no limitation as long as it is a substance used to wash the residual etching liquid L in the etching chamber 400, for example, deionized water can be used.

[0117] On the other hand, the cleaning liquid can also clean the inside of the etching liquid storage chamber 300 . At this time, the cleaning liquid storage chamber can also be connected to the etching liquid storage chamber 300 .

[0118] Figure 6 is a perspective view of an etching device using an etching chamber according to another embodiment of the present invention. Figure 7 Is used to display Figure 6 A bottom perspective view of an etching apparatus using an etching chamber, Figure 8 Is used to display Figure 6 A front cross-sectional view of an etching apparatus using an etching chamber, Fig. 9 Is used to display Figure 6 A side cross-sectional view of an etching apparatus using an etching chamber, Fig.10 Is used to display Figure 6 A perspective view of a bracket of an etching apparatus utilizing an etching chamber. Fig.11 Is used to display Figure 6 A three-dimensional view of a lifting portion of an etching device utilizing an etching chamber.

[0119] Refer to the following Figures 6 to 11An etching device using an etching chamber according to an embodiment of the present invention is described. An etching device 100 according to an embodiment of the present invention includes an etching chamber 900 , a cup portion 940 , a bracket 950 , and a lifting portion 960 .

[0120] The etching chamber 900 can be configured to be openable and closable, and is connected to the etching liquid storage chamber 300 through the connecting part 500. During the etching process, the etching liquid L is supplied to the internal pressure chamber 901 in a closed state, and the pressure chamber 901 is maintained in a pressurized atmosphere with the help of the pressurizing part 700.

[0121] The etching chamber 900 may include a first chamber 910 having a pressure chamber 901 formed therein and a second chamber 920 which is openably and closably arranged at the upper portion of the first chamber 910. The pressure chamber 901 of the first chamber 910 may be open upward, and a first connecting portion 911 may be formed through the lower portion of the first chamber 910 so as to be connected to a rotating shaft 953 described later, and a second connecting portion 912 may be formed through the lower portion of the first chamber 910 so as to be connected to a lifting pin 963 described later. The second chamber 920 may be connected to and separated from the upper portion of the first chamber 910 to open and close the pressure chamber 901, and an etching liquid inlet 921 is formed so that when the second chamber 920 is connected to the first chamber 910, the etching liquid L is supplied to the inside of the pressure chamber 901, and the etching liquid storage chamber 300 may be connected to the etching liquid inlet 921 by means of a connecting portion 500.

[0122] In addition, the second chamber 920 may be formed with a cleaning water inlet 922 to supply cleaning water from the outside, and the cleaning water supply part 162 may be connected to the cleaning water inlet 922 via a supply pipeline 161. In the etching chamber 900, a pressurizing part 700 for pressurizing the inside of the pressure chamber 901 and an exhaust part 800 for discharging the internal pressure of the pressure chamber 901 to the outside may be connected.

[0123] The cup portion 940 is arranged inside the pressure chamber 901 , and a receiving portion 941 for receiving etching liquid L and cleaning water may be formed concavely at the upper portion of the cup portion 940 , and a discharge portion 942 for discharging the etching liquid L to the outside of the first chamber 910 may be formed in the cup portion 940 .

[0124] At least one bracket 943 may protrude from the lower portion of the cup portion 940 . The bracket 943 is installed on the bottom surface of the pressure chamber 901 and may support the cup portion 940 at a predetermined height. At this time, the cup portion 940 is spaced apart from the bottom surface of the pressure chamber 901 toward the upper portion.

[0125] On the other hand, the bracket 950 of another embodiment of the present invention is different from the method of fixing the object W by a chuck after mounting the object W on the support pins of the bracket 410. The etching performance improvement portion can be formed on the bracket 950 to mount the object W.

[0126] The bracket 950 of one embodiment of the present invention can be rotatably arranged inside or on the cup 940 with the vertical rotation center as the reference. An etching performance improvement portion for mounting the etching object W is formed on the upper portion of the bracket 950. The bracket 950 can have a disc shape, and a rotation shaft 953 forming a vertical rotation center can protrude vertically at the lower portion of the bracket 950, and the rotation shaft 953 can be vertically penetrated and connected through the first connecting portion 911 of the first chamber 910.

[0127] The rotation driving portion 955 may be mechanically connected to the rotation shaft 953 , and the bracket 950 may be rotated by a rotational force transmitted from the rotation driving portion 955 to the rotation shaft 953 .

[0128] The first connection portion 911 may further include an annular first sealing member that surrounds the rotating shaft 953 in a rotational direction in a close contact state. The first sealing member may be made of a material such as polytetrafluoroethylene (PTFE).

[0129] A first rib may protrude from the inner circumference of the first sealing member, and the first rib may be continuously formed along the inner circumference of the first sealing member. The first rib protrudes obliquely upward or downward, and may be obliquely close to the radial direction (rotation direction) of the rotating shaft 953, and at least one first rib may be arranged along the up-and-down direction of the first sealing member.

[0130] Since the first rib of the first sealing member is in close contact with the outer surface of the rotating shaft 953 , airtightness between the first connecting portion 911 and the rotating shaft 953 can be ensured.

[0131] In addition, a bearing that can rotatably support the rotating shaft 953 in the radial direction can be combined with the first connecting portion 911, the bearing can be located at the upper and lower parts of the first sealing component, and a gasket component that surrounds the rotating shaft 953 in the radial direction can be combined between the bearing and the first sealing component.

[0132] The etching performance improvement portion of one embodiment of the present invention is formed in a recessed manner so that the object W can be installed in an inserted state and immersed in the etching liquid L. The etching performance improvement portion can include: a mounting surface 951, which is formed along the edge so that the object W can be installed; and a step 952, which is formed along the edge of the mounting surface 951 to accommodate the etching liquid L on the upper part of the object W.

[0133] The mounting surface 951 may be continuously formed along the inner circumferential surface of the bracket 950 , the upper end of the step 952 is higher than the mounting surface 951 , and the step 952 may be continuously formed along the edge of the mounting surface 951 .

[0134] In addition, on the bracket 950, the channel 954 can penetrate up and down to allow air to pass up and down. The channel 954 allows air to pass up and down, so when the edge of the object W is installed on the installation surface 951, the object W can be prevented from rising due to buoyancy.

[0135] The lifting part 960 is used to lift the object W inside the pressure chamber 901. When it is lifted, the object W is located on the upper part of the bracket 950, and when it is lowered, the object W is installed on the etching performance improvement part. The lifting part 960 can include: a main body 961, which can be lifted and lowered at the lower part of the cup part 940; and a support pin 962, which protrudes from the main body 961 to the upper part, can be lifted and lowered through the channel 954, and supports the lower part of the object W.

[0136] A lifting pin 963 may protrude vertically from the lower portion of the main body 961 . The lifting pin 963 may be vertically connected through the second connecting portion 912 of the first chamber 910 . The lifting driving portion 964 may be mechanically connected to the lifting pin 963 .

[0137] The second connection portion 912 may further include an annular second sealing member that surrounds the lift pin 963 in the width direction in a close contact state. The second sealing member may be made of a material such as polytetrafluoroethylene (PTFE).

[0138] A second rib may protrude from the inner circumference of the second sealing member, and the second rib may be continuously formed along the inner circumference of the second sealing member. The second rib may protrude obliquely upward or downward, and obliquely contact the width direction of the lifting pin 963, and at least one second rib may be arranged along the up-and-down direction of the second sealing member.

[0139] Since the second rib of the second sealing member is in close contact with the outer surface of the lift pin 963 , the airtightness between the second connection part 912 and the lift pin 963 can be ensured.

[0140] Furthermore, a first annular O-ring member may be coupled between the outer peripheral surface of the first sealing member and the first connecting portion 911 , and a second annular O-ring member may be coupled between the outer peripheral surface of the second sealing member and the second connecting portion 912 .

[0141] The first O-ring member and the second O-ring member can be made of materials such as rubber. The outer circumferences of the first sealing member and the second sealing member can be recessed with mounting portions for insertion of the inner circumferences of the first O-ring member and the second O-ring member.

[0142] On the other hand, a bearing that can rotatably support the lifting pin 963 in the width direction can be combined in the second connecting part 912, the bearing can be located at the upper and lower parts of the second sealing component, and a gasket component that surrounds the lifting pin 963 in the width direction can be combined between the bearing and the second sealing component.

[0143] In one embodiment of the present invention, the etching solution L is a silicon nitride film etching solution, and the silicon nitride film etching solution may contain phosphoric acid and water. At this time, with respect to the composition of the silicon nitride film etching solution, the content of water may be 10 to 20 parts by weight relative to 100 parts by weight of phosphoric acid, preferably, it may be 15 to 20 parts by weight, and most preferably, it may be mixed at a content of 85 wt% of phosphoric acid and 15 wt% of water.

[0144] The embodiments of the present invention are described in detail below so that those skilled in the art can easily implement the present invention. However, the present invention can be embodied in many different forms and is not limited to the embodiments described here.

[0145] Preparation Example 1. Preparation of a silicon nitride film etching solution composition containing a silylphosphine oxide compound

[0146] (1) Preparation of silylphosphine oxide additive compounds

[0147] A silylphosphine oxide compound according to one aspect of the present invention is prepared.

[0148] First, H3PO4 anhydride (100%, 300 g) and tetraethyl orthosilicate (Tetra-Ethyl-Ortho-Silicate: TEOS, 99%, 30 g) were mixed and stirred at 60 rpm for 10 minutes.

[0149] Then, the mixture was stirred at 60 rpm at 60°C for 8 hours to conduct a first reaction.

[0150] After the first reaction was completed, the temperature of the reactor was raised to 120° C. and the mixture was stirred at 60 rpm for 12 hours to perform a second reaction.

[0151] After the second reaction was completed, the temperature of the reactor was raised to 260° C., and the mixture was stirred at 60 rpm for 3 hours to perform a third reaction.

[0152] Finally, after the third reaction is completed, the reactor temperature is cooled to room temperature to obtain a silylphosphine oxide compound.

[0153] (2) Preparation of silicon nitride film etching solution composition containing silylphosphine oxide compounds

[0154] The silylphosphine oxide compound (SiP, 0.1wt%) prepared in (1), phosphoric acid (H3PO4, 85wt%), water (H2O, 14.8wt%) and an inhibitor (inhibitor, 0.1wt%) were mixed at 60rpm for 3 hours at room temperature to prepare a phosphoric acid etching solution composition containing a silylphosphine oxide compound as an additive.

[0155] Preparation Example 2. Preparation of normal phosphoric acid silicon nitride film etching solution composition

[0156] A phosphoric acid etching solution composition was prepared by mixing only phosphoric acid (H3PO4, 85 wt%) and water (H2O, 15.0 wt%) without mixing the (1) silylphosphine oxide compound of Preparation Example 1.

[0157] Preparation Example 3. Preparation of a silicon nitride film etching solution composition containing a silicon-based phosphate compound

[0158] (1) Preparation of silicon-based phosphate additive compounds

[0159] A silicon-based phosphate compound according to one aspect of the present invention is prepared.

[0160] First, H3PO4 anhydride (100%, 300 g) and tetraethyl orthosilicate (Tetra-Ethyl-Ortho-Silicate: TEOS, 99%, 30 g) were mixed and stirred at 60 rpm for 10 minutes.

[0161] Then, the mixture was stirred at 60 rpm at 80°C for 8 hours to conduct a first reaction.

[0162] After the first reaction was completed, the temperature of the reactor was raised to 120° C. and the mixture was stirred at 60 rpm for 12 hours to perform a second reaction.

[0163] Finally, after the second reaction is completed, the reactor temperature is cooled to room temperature to obtain the silicon-based phosphate compound.

[0164] (2) Preparation of silicon nitride film etching solution composition containing silicon-based phosphate compounds

[0165] The silicon-based phosphate compound (SiOP, 0.05wt%) prepared in (1), phosphoric acid (H3PO4, 85wt%), water (H2O, 14.85wt%) and an inhibitor (inhibitor, 0.1wt%) were mixed at 60rpm for 3 hours at room temperature to prepare a phosphoric acid etching solution composition containing the silicon-based phosphate compound as an additive.

[0166] Embodiment: Wafer etching based on etching apparatus using a single-wafer etching chamber

[0167] In order to evaluate the performance of the etching apparatus 100 using a single-wafer etching chamber of the present invention, the etching liquid compositions prepared in Preparation Examples 1 to 3 were used as etching liquids, and the conditions were changed as shown in Table 1 below to etch a wafer having a 250 nm silicon nitride film. At this time, the wafer etching was performed for 3 minutes at a rotation speed of 150 rpm.

[0168] [Table 1]

[0169]

[0170] Experimental Example: Performance Evaluation of Etching Device Using a Single-Wafer Etching Chamber

[0171] When wafer etching is performed under the conditions of Examples 1 to 13 and Comparative Examples 1 to 5, the silicon nitride film etching rate and the silicon oxide film etching rate are measured, and the silicon nitride film etching selectivity relative to the silicon oxide film (silicon nitride film etching rate / silicon oxide film etching rate) is calculated and shown in Table 2 below.

[0172] [Table 2]

[0173]

[0174] As shown in Table 2, it can be confirmed that Examples 1 to 13 in which etching is performed under pressurized conditions using the etching device utilizing a single-chip etching chamber of the present invention, compared to Comparative Examples 1 to 5 in which etching is performed at 0 Pa, exhibit a far superior selectivity ratio of silicon nitride film relative to silicon oxide film when other conditions except pressure are the same.

[0175] Embodiment: Wafer etching based on etching apparatus using batch etching chamber

[0176] In order to evaluate the performance of the etching apparatus using the batch etching chamber of the present invention, the etching liquid compositions prepared in Preparation Examples 1 to 4 were used as etching liquids, and the conditions were changed as shown in Table 3 below to etch the silicon nitride film to form a 250 nm wafer. At this time, the wafer etching was performed for 20 minutes respectively.

[0177] [Table 3]

[0178]

[0179] Experimental Example: Performance Evaluation of Etching Device Using Batch Etching Chamber

[0180] When wafer etching is performed under the conditions of Examples 1 to 12 and Comparative Examples 1 to 7, the silicon nitride film etching rate and the silicon oxide film etching rate are measured, and the silicon nitride film etching selectivity relative to the silicon oxide film (silicon nitride film etching rate / silicon oxide film etching rate) is calculated and shown in Table 4 below.

[0181] [Table 4]

[0182]

[0183] As shown in Table 4, it can be confirmed that Examples 1 to 12 in which etching is performed under pressurized conditions using the etching apparatus utilizing a batch etching chamber of the present invention, compared to Comparative Examples 1 to 7 in which etching is performed at 0 Pa, exhibit a much better selectivity ratio of silicon nitride film relative to silicon oxide film when other conditions except pressure are the same.

[0184] The etching device of the etching chamber according to the embodiment of the present invention pressurizes the etching liquid storage chamber 110, 300 and / or the etching chamber 130, 400, thereby preventing the etching liquid L from vaporizing, so that the concentration of the etching liquid L remains fixed, thereby significantly improving the etching selectivity.

[0185] In addition, due to the pressurization, the concentration of the etching solution L remains fixed, so there is no need to add deionized water and etching solution to maintain the concentration of the etching solution, which can improve the product yield and reduce the consumption of etching solution L, which can greatly save costs in terms of economy.

[0186] The present invention is described with reference to the embodiments shown in the accompanying drawings, but these are only examples, and a person skilled in the art will understand that various modifications and equivalent embodiments can be derived therefrom. Therefore, the true technical protection scope of the present invention should be determined according to the following claims.

Claims

1. An etching device using an etching chamber, comprising: An etching liquid storage chamber, wherein the etching liquid storage chamber stores an etching liquid; a connecting portion, the connecting portion being in communication with the etching liquid storage chamber; an etching chamber, the etching chamber being connected to the etching liquid storage chamber through the connecting portion to etch a target object; and a pressurization maintaining portion, the pressurization maintaining portion maintaining the etching liquid storage chamber and the etching chamber in a pressurized atmosphere; The pressure maintaining unit includes a first pressure maintaining unit for adjusting the pressure of the etching liquid storage chamber and a second pressure maintaining unit for adjusting the pressure of the etching chamber.

2. The etching device using the etching chamber according to claim 1, wherein: The first pressurization maintaining unit comprises: a first pressurizing unit, the first pressurizing unit maintaining the etching liquid storage chamber at a set pressure; a temperature control unit, the temperature control unit controls the temperature inside the etching solution storage chamber; and A first exhaust portion is provided, wherein the first exhaust portion exhausts the gas in the etching liquid storage chamber to the outside.

3. The etching device using the etching chamber according to claim 1, wherein: The second pressurization maintaining unit comprises: a second pressurizing unit, the second pressurizing unit maintaining the etching chamber at a set pressure; and A second exhaust portion is provided, wherein the second exhaust portion exhausts the gas inside the etching chamber to the outside.

4. The etching device using the etching chamber according to claim 3, wherein: The second exhaust portion exhausts the gas inside the etching chamber to the outside to generate a pressure difference with the inside of the etching solution storage chamber.

5. The etching device using the etching chamber according to claim 1, wherein: The connection part has: an etching liquid moving part, the etching liquid moving part is used to move the etching liquid from the etching liquid storage chamber to the etching chamber; a selective cutting portion, the selective cutting portion being disposed at the etching liquid moving portion and selectively cutting off the etching liquid moving portion; and An etching liquid supply part promotes the movement of the etching liquid.

6. The etching device using the etching chamber according to claim 1, wherein: The etching chamber includes a cup portion having a receiving portion formed therein, and A bracket is rotatably arranged on the upper part of the cup portion.

7. The etching device using the etching chamber according to claim 6, wherein: The etching chamber has: a first chamber, wherein the cup portion is disposed in a pressure chamber inside the first chamber; and A second chamber is disposed on one side of the first chamber in an openable and closable manner and is formed with an etching liquid inlet to supply the etching liquid into the second chamber.

8. The etching device using the etching chamber according to claim 7, wherein: The cup portion has a bracket mounted on the bottom surface of the pressure chamber.

9. The etching device using the etching chamber according to claim 7, wherein: A rotating shaft is provided at the bottom of the bracket. The rotation shaft forms a vertical rotation center and transmits a rotation driving force from a rotation driving portion.

10. The etching device using the etching chamber according to claim 9, wherein: The rotating shaft vertically passes through a first connecting portion of the first chamber. A first sealing member is provided, the first sealing member being inserted into the first connecting portion and surrounding the rotating shaft in a rotation direction in a close contact state.

11. The etching device using the etching chamber according to claim 10, wherein: The first sealing member includes a first rib portion protruding from the inner peripheral surface, being closely attached to the radial direction of the rotating shaft at an angle, and at least one of the first rib portions is arranged in the vertical direction.

12. The etching device using the etching chamber according to claim 7, wherein: The bracket has a passage that passes through from top to bottom.

13. The etching device using the etching chamber according to claim 12, wherein: It comprises a lifting part, which has: a main body capable of being raised and lowered at the lower portion of the cup portion; and A supporting pin protrudes from the upper part of the main body, can be lifted and lowered through the channel, and supports the lower part of the main body.

14. The etching device using the etching chamber according to claim 13, wherein: The main body includes a lift pin for transmitting a lift driving force from the lift driving unit.

15. The etching device using the etching chamber according to claim 14, wherein: The lifting pin vertically passes through a second connecting portion of the first chamber. A second sealing member is provided, the second sealing member protruding toward the lower portion of the main body, inserted into the second connecting portion, and surrounding the lift pin in a width direction in a close contact state.

16. The etching device using the etching chamber according to claim 15, wherein: The second sealing member further includes a second rib portion protruding from the inner peripheral surface, obliquely pressed against the width direction of the lifting pin, and at least one second rib portion is arranged in the up-and-down direction.

17. The etching apparatus using the etching chamber according to claim 1, wherein: The etching chamber is provided with a cleaning portion for cleaning the etching solution after etching is completed.

18. The etching device using the etching chamber according to claim 17, wherein: The cleaning section has a supply line connected to the interior of the etching chamber; and A washing water supply part supplies washing water through the supply pipeline.

19. The etching apparatus using the etching chamber according to claim 1, wherein: The pressurized atmosphere is maintained at 0.1 Pa to 10 Pa.

20. The etching apparatus using the etching chamber according to claim 1, wherein: The etching solution selectively uses at least one of HF, NHO3, H2O2, IPA, NH4OH, H2O, H3PO4, H2SO4 or a mixture of more than one of them.

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