A semiconductor intelligent power module and its packaging method

Abstract

The present invention provides a semiconductor intelligent power module and its packaging method, belonging to the technical field of intelligent power modules. The semiconductor intelligent power module includes a package body. Two reinforcing layers are symmetrically arranged at the bottom of the package body. A filling area is formed between the two reinforcing layers, and a heat dissipation area is formed on the side of the two reinforcing layers opposite to the package body. A heat dissipation substrate, a heat conduction layer, an insulating layer, and a circuit layout layer are sequentially stacked in the filling area. The circuit layout layer is also fixedly connected to a driving chip and an IGBT chip respectively. The driving chip and the IGBT chip have targeted heat dissipation, and a multi-range heat dissipation mode is formed around the circuit layout layer, accelerating the heat conduction of each path, reducing heat concentration, greatly improving the heat dissipation efficiency of the intelligent power module, effectively avoiding the overheating of the power module itself, and thus effectively increasing the service life of the power module.

Description

Technical Field

[0001] The present invention belongs to the technical field of intelligent power modules, and more specifically, relates to a semiconductor intelligent power module and its packaging method. Background Art

[0002] An intelligent power module, namely IPM (Intelligent Power Module), is a power drive product that combines power electronics and integrated circuit technologies. The intelligent power module integrates power switching devices and high-voltage drive circuits, and internally incorporates fault detection circuits such as overvoltage, overcurrent, and overheating. On the one hand, the intelligent power module can receive control signals from the drive chip to drive the subsequent circuit to work, and on the other hand, it sends the system status detection signals back to the drive chip. The intelligent power module consists of high-speed and low-power-consuming die, an optimized gate drive circuit, and a fast protection circuit. Even in the event of a load accident or improper use, the IPM itself can be protected from damage. IPM generally uses IGBT as the power switching element and has an integrated structure with a current sensor and a drive circuit. Facing the market competition of miniaturization and low cost, higher requirements are put forward for the high integration and high heat dissipation technologies of IPM intelligent power modules.

[0003] In the prior art, the heat dissipation of the drive chip and the IGBT chip in the intelligent power module has always been a difficult point to improve. Usually, a heat sink is attached externally to the intelligent power module for heat dissipation, but this method has poor heat conduction effect and is difficult to effectively dissipate heat from the intelligent power module. Summary of the Invention

[0004] Embodiments of the present invention provide a semiconductor intelligent power module and its packaging method, aiming to solve the problem of poor heat conduction effect when the existing intelligent power module is attached to the heat sink.

[0005] In view of the above problems, the technical solution proposed by the present invention is as follows:

[0006] A semiconductor intelligent power module, the intelligent power module includes a package body, two reinforcing layers are symmetrically arranged at the bottom of the package body, a filling area is formed between the two reinforcing layers, and a heat dissipation area is formed on the side of the two reinforcing layers opposite to the package body. A heat dissipation substrate, a heat conduction layer, an insulating layer, and a circuit layout layer are sequentially stacked in the filling area. The circuit layout layer is also fixedly connected to a drive chip and an IGBT chip respectively. A diaphragm layer covers the upper surfaces of the drive chip and the IGBT chip. A moisture-proof coating is applied on the upper surface of the diaphragm layer. A semiconductor refrigeration sheet is arranged on the moisture-proof coating. A metal heat transfer layer is arranged on the circuit layout layer, and a laminated heat dissipation part is arranged on the metal heat transfer layer.

[0007] As a preferred technical solution of the present invention, heat dissipation fins are provided in the heat dissipation area.

[0008] As a preferred technical solution of the present invention, heat dissipation holes are formed in the wall surface of the package body opposite to the filling area, and a plurality of pins are provided on both sides of the package body, and the plurality of pins are all connected to the circuit layout layer.

[0009] As a preferred technical solution of the present invention, the stacked heat dissipation part includes a stacked heat dissipation body and a heat collecting layer. The stacked heat dissipation body is arranged above the heat collecting layer, and a plurality of guiding blocks are provided below the heat collecting layer, and the plurality of guiding blocks are embedded in the metal heat transfer layer.

[0010] As a preferred technical solution of the present invention, the stacked heat dissipation body sequentially includes a graphene layer, a thermal conductive silicone layer, thermal conductive silicone grease, a thermal conductive gel layer and an epoxy resin layer from top to bottom.

[0011] As a preferred technical solution of the present invention, the metal material of the metal heat transfer layer is copper or aluminum.

[0012] As a preferred technical solution of the present invention, the material of the moisture-proof coating is vaseline.

[0013] As a preferred technical solution of the present invention, the material of the insulating layer is any one of aluminum oxide, aluminum nitride and silicon carbide.

[0014] On the other hand, the present invention provides a packaging method for a semiconductor intelligent power module, including the following steps:

[0015] S1, provide a heat dissipation substrate, prepare a reinforcing layer on both sides of the heat dissipation substrate to form a filling area, stack a heat conductive layer and an insulating layer from bottom to top in the filling area, and arrange a circuit layout layer on the upper surface of the insulating layer;

[0016] S2, then sinter and fix a driving chip and an IGBT chip on the circuit layout layer respectively, cover a diaphragm layer on the driving chip and the IGBT chip, apply a moisture-proof coating on the diaphragm layer, and at the same time place a semiconductor refrigeration sheet on the moisture-proof coating to fix it to the circuit layout layer;

[0017] S3, then weld a plurality of pins on both sides of the circuit layout layer, and install heat dissipation fins on one side of the reinforcing layer;

[0018] S4, then fill a metal material between the heat dissipation fins and the circuit layout layer and perform annealing treatment to form a metal heat transfer layer. At the same time, a slot is reserved on the upper surface of the metal heat transfer layer, a heat collecting layer is prepared on the metal heat transfer layer, and the guiding blocks of the heat collecting layer are embedded in the slot;

[0019] S5. Next, a graphene layer, a thermal conductive silica gel layer, a thermal conductive silicone grease, a thermal conductive gel layer, and an epoxy resin layer are sequentially prepared on the heat collection layer;

[0020] S6. Next, a packaging body is provided to wrap and seal the whole.

[0021] As a preferred technical solution of the present invention, the reinforcing layer, the laminated heat conduction layer, the insulating layer, and the heat collection layer are formed by chemical vapor deposition, and the height of the metal heat transfer layer is controlled at 50 μm to 100 μm.

[0022] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0023] (1) By respectively arranging semiconductor refrigeration chips on the drive chip and the IGBT chip, the efficiency of the drive chip and the IGBT chip can be increased; at the same time, a moisture-proof coating is used to prevent condensed water droplets when the semiconductor refrigeration chip cools, and damage to the drive chip and the IGBT chip is also avoided; and even if a small amount of water droplets are generated, they can be isolated by the diaphragm layer, and the water droplets are evaporated by the emitted high temperature.

[0024] (2) There is targeted heat dissipation for the drive chip and the IGBT chip, and a multi-range heat dissipation mode is formed around the circuit layout layer, which speeds up the heat conduction of each path, reduces heat concentration, greatly improves the heat dissipation efficiency of the intelligent power module, effectively avoids the over-high temperature of the power module itself, and thus effectively extends the service life of the power module.

[0025] The above description is only an overview of the technical solution of the present invention. In order to be able to understand the technical means of the present invention more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features, and advantages of the present invention more obvious and understandable, the following specific embodiments of the present invention are specifically given. Brief Description of the Drawings

[0026] Figure 1 is a three-dimensional view of a semiconductor intelligent power module disclosed by the present invention;

[0027] Figure 2 is Figure 1 the cross-sectional view taken along line A-A in

[0028] Figure 3 is a schematic structural view of a laminated heat dissipation body of a semiconductor intelligent power module disclosed by the present invention;

[0029] Figure 4 is a working flowchart of a packaging method for a semiconductor intelligent power module disclosed by the present invention.

[0030] Explanation of the reference numerals: 100, intelligent power module; 110, packaging body; 111, reinforcement layer; 112, heat dissipation hole; 120, heat dissipation substrate; 130, heat conductive layer; 140, insulation layer; 150, circuit layout layer; 151, driver chip; 152, IGBT chip; 153, diaphragm layer; 154, moisture-proof coating; 155, semiconductor refrigeration sheet; 160, heat dissipation fins; 170, metal heat transfer layer; 180, laminated heat dissipation part; 181, laminated heat dissipation body; 1811, graphene layer; 1812, thermally conductive silicone layer; 1813, thermally conductive silicone grease; 1814, thermally conductive gel layer; 1815, epoxy resin layer; 182, heat collection layer; 1821, guide block; 190, pin. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0034] In the description of the present invention, it needs to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0035] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0036] Embodiment 1

[0037] Referring to the attached Figures 1 to 3 As shown, the present invention provides a technical solution: a semiconductor intelligent power module. The intelligent power module 100 includes a package 110. Two reinforcing layers 111 are symmetrically arranged at the bottom of the package 110. A filling area is formed between the two reinforcing layers 111, and a heat dissipation area is formed on the side of the two reinforcing layers 111 opposite to the package 110. A heat dissipation substrate 120, a heat conducting layer 130, an insulating layer 140, and a circuit layout layer 150 are sequentially stacked in the filling area. The circuit layout layer 150 is also fixedly connected to a driving chip 151 and an IGBT chip 152 respectively. A diaphragm layer 153 covers the upper surfaces of the driving chip 151 and the IGBT chip 152. A moisture-proof coating 154 is applied on the upper surface of the diaphragm layer 153. A semiconductor refrigeration chip 155 is arranged on the moisture-proof coating 154. A metal heat transfer layer 170 is arranged on the circuit layout layer 150, and a stacked heat dissipation part 180 is arranged on the metal heat transfer layer 170.

[0038] In this embodiment, by respectively arranging semiconductor refrigeration chips 155 on the driving chip 151 and the IGBT chip 152, the efficiency of the driving chip 151 and the IGBT chip 152 can be increased; at the same time, the moisture-proof coating 154 is used to prevent water droplets from condensing when the semiconductor refrigeration chip 155 refrigerates, and damage to the driving chip 151 and the IGBT chip 152 is also avoided; and even if a small amount of water droplets are generated, they can be isolated by the diaphragm layer 153, and the water droplets are evaporated by the emitted high temperature.

[0039] It should be noted that the material of the diaphragm layer 153 is a graphene film.

[0040] The high temperature generated by the operation of the circuit layout layer 150 and the high temperature generated by the heat exchange of the semiconductor refrigeration chip 155 both achieve heat conduction and heat dissipation functions through the metal heat transfer layer 170; the lower surface of the circuit layout layer 150 can also achieve heat dissipation through heat transfer of the insulating layer 140, the heat conducting layer 130, and the heat dissipation substrate 120.

[0041] In addition, the IGBT chip 152 is electrically connected to the driving chip 151.

[0042] In a preferred embodiment of the present invention, heat dissipation fins 160 are provided in the heat dissipation area. After the metal heat transfer layer 170 absorbs heat, part of the heat is transferred to the heat dissipation fins 160 on both sides, and is dissipated in cooperation with the heat dissipation holes 112.

[0043] In a preferred embodiment of the present invention, heat dissipation holes 112 are provided on the wall surface of the package body 110 opposite to the filling area. A plurality of pins 190 are provided on both sides of the package body 110, and the plurality of pins 190 are all connected to the circuit layout layer 150.

[0044] In a preferred embodiment of the present invention, the stacked heat dissipation part 180 includes a stacked heat dissipation body 181 and a heat collecting layer 182. The stacked heat dissipation body 181 is arranged above the heat collecting layer 182. A plurality of guiding blocks 1821 are provided below the heat collecting layer 182, and the plurality of guiding blocks 1821 are embedded in the metal heat transfer layer 170. The stacked heat dissipation body 181 includes a graphene layer 1811, a thermal conductive silicone layer 1812, a thermal conductive silicone grease 1813, a thermal conductive gel layer 1814, and an epoxy resin layer 1815 from top to bottom; since the semiconductor refrigeration chip 155 is most likely to generate high temperature, therefore, the plurality of guiding blocks 1821 are mainly concentrated above the driving chip 151 and the IGBT chip 152, and the heat collecting layer 182 also mainly performs heat transfer on this part quickly to the stacked heat dissipation body 181, and finally achieves a good heat dissipation effect.

[0045] Of course, the material of the heat collecting layer 182 is any one of boron carbide, silicon carbide, boron nitride, silicon nitride, boron phosphide, and silicon phosphide.

[0046] In a preferred embodiment of the present invention, the metal material of the metal heat transfer layer 170 is copper or aluminum.

[0047] In a preferred embodiment of the present invention, the material of the moisture-proof coating 154 is vaseline.

[0048] Preferably, the material of the insulating layer 140 is any one of aluminum oxide, aluminum nitride, and silicon carbide.

[0049] Embodiment 2

[0050] Refer to the attached Figure 4 As shown, another packaging method of the semiconductor intelligent power module 100 provided by the embodiment of the present invention includes the following steps:

[0051] S1, provide a heat dissipation substrate 120, prepare a strengthening layer 111 on both sides of the heat dissipation substrate 120 and form a filling area, stack a thermal conductive layer 130 and an insulating layer 140 in sequence from bottom to top in the filling area, and arrange a circuit layout layer 150 on the upper surface of the insulating layer 140.

[0052] S2. Then, the driving chip 151 and the IGBT chip 152 are sintered and fixed on the circuit layout layer 150 respectively. A diaphragm layer 153 is covered on the driving chip 151 and the IGBT chip 152, and a moisture-proof coating 154 is applied on the diaphragm layer 153. At the same time, a semiconductor refrigeration chip 155 is placed on the moisture-proof coating 154 and fixed to the circuit layout layer 150.

[0053] S3. Then, a plurality of pins 190 are welded on both sides of the circuit layout layer 150, and a heat sink fin 160 is installed on one side of the reinforcement layer 111.

[0054] S4. Then, a metal material is filled between the heat sink fin 160 and the circuit layout layer 150 and annealed to form a metal heat transfer layer 170. At the same time, a slot is reserved on the upper surface of the metal heat transfer layer 170. A heat collection layer 182 is prepared on the metal heat transfer layer 170, and the guiding block 1821 of the heat collection layer 182 is embedded in the slot.

[0055] S5. Then, a graphene layer 1811, a thermal conductive silica gel layer 1812, a thermal conductive silicone grease 1813, a thermal conductive gel layer 1814 and an epoxy resin layer 1815 are sequentially prepared on the heat collection layer 182.

[0056] S6. Then, a package 110 is provided to wrap and seal the whole.

[0057] In a preferred embodiment of the present invention, the reinforcement layer 111, the laminated heat conductive layer 130, the insulating layer 140 and the heat collection layer 182 are formed by chemical vapor deposition, and the height of the metal heat transfer layer 170 is controlled within 50μm - 100μm.

[0058] The above is only the preferred embodiment of the present invention and is not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A semiconductor intelligent power module, characterized in that, The intelligent power module includes a package body. Two reinforcing layers are symmetrically arranged at the bottom of the package body. A filling area is formed between the two reinforcing layers, and a heat dissipation area is formed on the side of the two reinforcing layers opposite to the package body. A heat dissipation substrate, a heat conduction layer, an insulating layer, and a circuit layout layer are sequentially stacked in the filling area. The circuit layout layer is also fixedly connected to a driving chip and an IGBT chip respectively. A diaphragm layer covers the upper surfaces of the driving chip and the IGBT chip. A moisture-proof coating is applied to the upper surface of the diaphragm layer. A semiconductor refrigerating sheet is arranged on the moisture-proof coating. A metal heat transfer layer is arranged on the circuit layout layer, and a laminated heat dissipation part is arranged on the metal heat transfer layer.

2. A semiconductor intelligent power module according to claim 1, characterized in that, Heat dissipation fins are arranged in the heat dissipation area.

3. A semiconductor intelligent power module according to claim 1, characterized in that, Heat dissipation holes are formed in the wall surface of the package body opposite to the filling area. A plurality of pins are arranged on both sides of the package body, and all the pins are connected to the circuit layout layer.

4. A semiconductor intelligent power module according to claim 1, wherein, The laminated heat dissipation part includes a laminated heat dissipation body and a heat collecting layer. The laminated heat dissipation body is arranged above the heat collecting layer. A plurality of guiding blocks are arranged below the heat collecting layer, and the plurality of guiding blocks are embedded in the metal heat transfer layer.

5. A semiconductor intelligent power module according to claim 4, characterized in that, The laminated heat dissipation body sequentially includes a graphene layer, a heat conductive silica gel layer, heat conductive silicone grease, a heat conductive gel layer, and an epoxy resin layer from top to bottom.

6. A semiconductor intelligent power module according to claim 1, characterized in that, The metal material of the metal heat transfer layer is copper or aluminum.

7. A semiconductor intelligent power module according to claim 1, characterized in that, The material of the moisture-proof coating is vaseline.

8. A semiconductor intelligent power module according to claim 1, wherein, The material of the insulating layer is any one of alumina, aluminum nitride, and silicon carbide.

9. A packaging method for a semiconductor intelligent power module, applied to the semiconductor intelligent power module according to any one of claims 1 to 8, characterized in that, It includes the following steps: S1. Provide a heat dissipation substrate. Prepare a reinforcing layer on both sides of the heat dissipation substrate and form a filling area. Stack a heat conduction layer and an insulating layer in sequence from bottom to top in the filling area, and arrange a circuit layout layer on the upper surface of the insulating layer. S2. Then sinter and fix a driving chip and an IGBT chip on the circuit layout layer respectively. Cover a diaphragm layer on the driving chip and the IGBT chip, and apply a moisture-proof coating on the diaphragm layer. At the same time, place a semiconductor refrigerating sheet on the moisture-proof coating to fix it to the circuit layout layer. S3. Then weld a plurality of pins on both sides of the circuit layout layer, and install heat dissipation fins on one side of the reinforcing layer. S4. Then fill a metal material between the heat dissipation fins and the circuit layout layer and perform annealing treatment to form a metal heat transfer layer. At the same time, reserve a slot on the upper surface of the metal heat transfer layer. Prepare a heat collecting layer on the metal heat transfer layer, and embed the guiding blocks of the heat collecting layer into the slot. S5. Then prepare a graphene layer, a heat conductive silica gel layer, heat conductive silicone grease, a heat conductive gel layer, and an epoxy resin layer on the heat collecting layer in sequence. S6. Then provide a package body to wrap and seal the whole.

10. The packaging method of a semiconductor intelligent power module according to claim 9, characterized in that, The reinforcing layer, the laminated heat conduction layer, the insulating layer, and the heat collecting layer are formed by chemical vapor deposition method. The height of the metal heat transfer layer is controlled within 50μm - 100μm.

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