Ceramic nozzle with conductive electrode

Abstract

An exemplary semiconductor processing chamber showerhead may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of holes through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend around the plurality of holes. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerhead may also include a conductive material embedded in the dielectric plate and extending around the plurality of holes without being exposed by the holes. The conductive material may be exposed at the second annular channel.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of priority to U.S. Patent Application No. 16 / 245,698, filed on January 11, 2019, the contents of which are incorporated herein by reference in their entirety for all purposes. Technical Field

[0003] The present technology relates to semiconductor processes and equipment. More specifically, the present technology relates to ceramic chamber components that can be used as system electrodes. Background Art

[0004] Integrated circuits are made possible by processes that produce complex patterned layers of material on a substrate surface. Producing patterned material on a substrate requires controlled methods to remove exposed material. Chemical etching is used for a variety of purposes, including transferring a pattern in a photoresist to an underlying layer, thinning a layer, or thinning the lateral dimensions of features already present on a surface. It is often desirable to have an etching process that etches one material faster than another material, thereby facilitating, for example, a pattern transfer process. Such etching processes are said to be selective to the first material. Due to the diversity of materials, circuits, and processes, etching processes that are selective to a variety of materials have been developed.

[0005] Etching processes may be referred to as wet or dry processes based on the materials used in the process. For example, wet etching may preferentially remove some oxide dielectrics compared to other dielectrics and materials. However, wet processes may have difficulty penetrating certain constrained trenches and may sometimes deform the residual material. Dry etching produced in a plasma formed within the substrate processing region may penetrate more constrained trenches and exhibit less deformation of fine residual structures. However, plasmas may damage substrates or chamber components via arcs generated when they discharge and by bombarding and etching system components.

[0006] Therefore, there exists a need for improved systems and methods by which high quality devices and structures can be produced. These and other needs are addressed by the present technology. Summary of the invention

[0007] An exemplary semiconductor processing chamber showerhead may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of holes through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend around the plurality of holes. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerhead may also include a conductive material embedded in the dielectric plate and extending around the plurality of holes without being exposed by the holes. The conductive material may be exposed at the second annular channel.

[0008] In some embodiments, the second annular channel may be defined within the dielectric plate to a greater depth than the first annular channel. The conductive material may extend through the dielectric plate within the dielectric plate at a depth greater than the depth of the first annular channel. The conductive material may be exposed by the second annular channel but not by the first annular channel. The showerhead may also include an RF gasket disposed within the second annular channel and configured to use the conductive material as an electrode. The showerhead may also include an elastomeric element disposed within the first annular channel. The conductive material may include a foil or mesh extending across an interior region of the showerhead defined by the first annular channel. The conductive material may include a plurality of tabs extending from an interior region of the showerhead to the second annular channel.

[0009] Some embodiments of the present technology may also encompass a semiconductor processing chamber showerhead, which may include a plate, the plate including a first dielectric material. The plate is characterized by a first surface and a second surface opposite the first surface. The plate may define a plurality of holes through the plate. The showerhead may include a conductive material disposed on the first surface of the plate, and the conductive material may be maintained at a first radial distance from each of the plurality of holes. The showerhead may also include a coating, the coating including a second dielectric material. The coating may extend across the conductive material, and the coating may be maintained at a second radial distance from each of the plurality of holes. The second radial distance may be less than the first radial distance.

[0010] In some embodiments, the conductive material may be exposed at a radial edge of the showerhead to provide electrical coupling of the showerhead. The showerhead may define an annular channel in the first surface of the plate radially outside the plurality of holes and radially inside the exposed conductive material at the radial edge of the showerhead. The coating may be or include a multilayer coating. The first dielectric material and the second dielectric material may be or include different materials. The conductive material may be or include a perforated foil or mesh.

[0011] Some embodiments of the present technology may encompass a semiconductor processing chamber having a lid and a substrate support. The chamber may also include a showerhead located between the lid and the substrate support. A first plasma region may be defined between the showerhead and the lid, and a second plasma region may be defined between the showerhead and the substrate support. The lid and the substrate support may each be coupled to a power source that generates the plasma. The showerhead may be electrically coupled to ground, and the showerhead may include a plate comprising a first dielectric material. The plate is characterized by a first surface and a second surface opposite the first surface. The plate may define a plurality of holes through the plate, and the showerhead may define a first annular channel in the first surface of the plate radially outside the plurality of holes. The showerhead may also include a conductive material coupled to the plate. Exposure of the conductive material may be limited to an area radially outside the first annular channel.

[0012] In some embodiments, the plate may define a second annular channel in the first surface of the plate. The second annular channel may be formed radially outward from the first annular channel, and the conductive material may be embedded in the plate and exposed by the second annular channel. The second annular channel may be defined in the plate to a greater depth than the first annular channel. The conductive material may extend through the plate in the plate at a depth greater than the depth of the first annular channel. The conductive material may be exposed by the second annular channel and not by the first annular channel. The processing chamber may also include an RF gasket disposed in the second annular channel and configured to electrically couple the conductive material to ground. The chamber may also include an elastomeric element disposed in the first annular channel. The conductive material may be disposed on the first surface of the plate, and the conductive material may be maintained at a first radial distance from each of the plurality of holes. The showerhead may also include a coating that may be a second dielectric material. The coating may extend across the conductive material, and the coating may be maintained at a second radial distance from each of the plurality of holes. The second radial distance may be less than the first radial distance. The coating may be or include a multilayer coating. The conductive material may be or include a perforated foil or mesh.

[0013] Such techniques can provide many benefits over conventional systems and techniques. For example, during plasma processing, the showerhead can be used as a ground electrode. In addition, the showerhead can limit the bombardment of the metal with plasma species during plasma formation. These and other embodiments and their many advantages and features are described in more detail in conjunction with the following detailed description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remainder of the specification and the accompanying drawings.

[0015] Figure 1 A top plan view of one embodiment of an exemplary processing system in accordance with some embodiments of the present technology is shown.

[0016] Figure 2A A schematic cross-sectional view of an exemplary processing chamber according to some embodiments of the present technology is shown.

[0017] Figure 2B Some embodiments of the present technology are shown Figure 2A A detailed schematic diagram of a portion of a processing chamber is shown.

[0018] Figure 3 A bottom plan view of an exemplary showerhead according to some embodiments of the present technology is shown.

[0019] Figure 4 Exemplary operations in a method according to some embodiments of the present technology are shown.

[0020] Figure 5AA schematic partial top plan view of an exemplary showerhead according to some embodiments of the present technology is shown.

[0021] Figure 5B A schematic partial cross-sectional view of an exemplary showerhead according to some embodiments of the present technology is shown.

[0022] Figure 6 Exemplary operations in a method according to some embodiments of the present technology are shown.

[0023] 7A to 7C A schematic top plan view of an exemplary showerhead according to some embodiments of the present technology is shown.

[0024] Fig.7D A schematic partial cross-sectional view of an exemplary showerhead according to some embodiments of the present technology is shown.

[0025] Figure 8 Exemplary operations in a method according to some embodiments of the present technology are shown.

[0026] FIG. 9A to FIG. 9B A schematic top plan view of an exemplary showerhead according to some embodiments of the present technology is shown.

[0027] Several of the drawings are included as schematic diagrams. It should be understood that the drawings are for illustration purposes only and should not be considered to be drawn to scale unless specifically noted as being drawn to scale. Additionally, as schematic diagrams, the drawings are provided to aid understanding and may not include all aspects or information compared to actual representations and may include additional or exaggerated material for illustration purposes.

[0028] In the accompanying drawings, similar components and / or features may have the same reference numerals. In addition, various components of the same type may be distinguished by appending a letter after the reference numeral to distinguish between similar components. If only the first reference numeral is used in the specification, the description applies to any similar components having the same first reference numeral, regardless of the letter. DETAILED DESCRIPTION

[0029] The dry etching process may generate plasma species in certain regions of the processing area. Different plasma regions may include local regions or regions adjacent to the substrate surface, and remote regions (such as in fluidically coupled but physically separate portions of the processing chamber). Many processing chambers include many different material components that define the interior space within the chamber. For example, metal components may be incorporated to serve as electrodes within the chamber, such as for capacitively coupled plasma operations. Additionally, dielectric materials may be included to separate electrodes or to serve as material coatings.

[0030] A showerhead that may be used as a plasma electrode or that may more generally assist the flow of plasma species may contact and / or otherwise be exposed to the plasma effluent. Many etchant materials may interact with these electrodes, thereby stripping coatings or bombarding exposed areas. As a non-limiting example, in some local or wafer-level plasma operations, a showerhead or manifold may be used as a ground electrode to generate plasma in a substrate processing area, wherein a substrate support or some other component may be used as an electrode to generate plasma. A showerhead used as a ground electrode may be bombarded by plasma species, which may cause metal species to contaminate the substrate on exposed metal, which may cause a short circuit during operation. Therefore, some conventional designs may routinely replace showerheads or coat showerheads with materials that are resistant to bombardment.

[0031] The coatings used in some conventional designs may be sufficient to resist bombardment or erosion, but may not be sufficient to resist chemical reactions with plasma effluent species, which may cause corrosion of the coating. Therefore, these components may routinely need to be re-coated or replaced. In addition, many showerheads include many holes for delivering species through the chamber. If the coating does not completely coat each hole sidewall and all exposed surfaces, the plasma species that can be generated remotely may cause the same problems as the plasma species generated locally. In addition, if the holes are not small enough, the local plasma may leak through these holes, thereby damaging other upstream components. However, when sufficiently small holes are formed, many line-of-sight coating devices cannot provide a complete coating within the holes. Therefore, many conventional showerheads cannot be used as electrodes for a long time and stably.

[0032] The present technology overcomes the above problems by using dielectric or ceramic materials for the showerhead. Typically, ceramic materials cannot be used as electrodes due to their dielectric properties. The present technology combines one or more conductive materials within the ceramic, which allows the component to be used as an electrode. The conductive material can be included within the ceramic or dielectric material in the area exposed to the plasma, which can prevent the above-mentioned contamination or bombardment problems. By using specific materials for the components, a showerhead with a reduced hole size can be manufactured, which can completely cover the conductive material. In addition, the material can resist erosion and / or corrosion caused by plasma exposure.

[0033] Although the remainder of the disclosure will routinely utilize the disclosed techniques to identify specific etching processes, it will be readily understood that the systems and methods are equally applicable to deposition and cleaning processes and chambers that may occur in the described chamber or other chambers. Therefore, the techniques should not be viewed as limited to only those used with any particular etching process or chamber. Furthermore, although an exemplary chamber is described to provide a basis for the present techniques, it should be understood that the present techniques are applicable to virtually any semiconductor processing chamber that can allow the described operations.

[0034] Figure 1A top plan view of one embodiment of a processing system 100 of deposition, etching, baking and curing chambers according to an embodiment is shown. In the figure, a pair of front opening unification units (FOUPs) 102 supply substrates of various sizes, which are received and placed in a low pressure holding area 106 by a robot 104 before being placed in one of the substrate processing chambers 108a-108f, which are positioned in a tandem section 109a-c. A second robot 110 can be used to transfer substrate wafers from the holding area 106 to the substrate processing chambers 108a-f and back. Each substrate processing chamber 108a-f can be configured to perform a number of substrate processing operations, including dry etching processes described herein in addition to cyclic layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, pre-cleaning, degassing, orientation and other substrate processes.

[0035] The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing and / or etching dielectric films on substrate wafers. In one configuration, two pairs of processing chambers (e.g., 108c-d and 108e-f) may be used to deposit dielectric materials on substrates, and a third pair of processing chambers (e.g., 108a-b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (e.g., 108a-f) may be configured to etch dielectric films on substrates. Any one or more of the described processes may be implemented in (multiple) chambers separate from the manufacturing system shown in different embodiments. It will be understood that the system 100 contemplates other configurations of deposition, etching, annealing, and curing chambers for dielectric films.

[0036] Figure 2A A cross-sectional view of an exemplary processing chamber system 200 having a separated plasma generation region within a processing chamber is shown. During film etching (e.g., titanium nitride, tantalum nitride, tungsten, silicon, polysilicon, silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbide, etc.), process gases may flow into a first plasma region 215 through a gas inlet assembly 205. A remote plasma system (RPS) 201 may optionally be included in the system and may process a first gas, which then travels through the gas inlet assembly 205. The inlet assembly 205 may include two or more different gas supply channels, wherein a second channel (not shown) may bypass the RPS 201, if present.

[0037] A cooling plate 203, a face plate 217, an ion suppressor 223, a showerhead 225, and a substrate support 265 on which a substrate 255 is disposed are shown and may include, respectively, depending on the embodiment. In some embodiments, the cooling plate and the face plate may be used as aspects of a lid assembly. The pedestal 265 may have heat exchange channels through which a heat exchange fluid flows to control the temperature of the substrate, and the heat exchange fluid may be operated to heat and / or cool the substrate or wafer during processing operations. The wafer support plate of the pedestal 265 (which may include aluminum, ceramic, or a combination thereof) may also be resistively heated using an embedded resistive heater element to achieve relatively high temperatures, such as from up to or about 100°C to above or about 1100°C.

[0038] The faceplate 217 may be pyramidal, conical, or have another similar structure that expands from a narrow top to a wide bottom. As shown, the faceplate 217 may also be flat and include a plurality of through-channels for distributing process gases. Depending on the use of the RPS 201, the plasma-generating gas and / or the species that excite the plasma may pass through a plurality of holes in the faceplate 217, such as Figure 2B As shown, for more uniform delivery into the first plasma region 215 .

[0039] An exemplary configuration may include opening the gas inlet assembly 205 into a gas supply region 258 separated from the first plasma region 215 by a faceplate 217, such that the gas / species flows through holes in the faceplate 217 into the first plasma region 215. Structural and operational features may be selected to prevent significant backflow of plasma from the first plasma region 215 into the supply region 258, the gas inlet assembly 205, and the fluid supply system 210. The faceplate 217 (or the conductive top of the chamber) and the showerhead 225 are shown with an insulating ring 220 located between the features, which allows an AC potential to be applied to the faceplate 217 relative to the showerhead 225 and / or the ion suppressor 223. The insulating ring 220 may be located between the faceplate 217 and the showerhead 225 and / or the ion suppressor 223 to enable formation of a capacitively coupled plasma (CCP) in the first plasma region. A baffle (not shown) may additionally be located in the first plasma region 215 or otherwise coupled to the gas inlet assembly 205 to affect the flow of fluid into the region through the gas inlet assembly 205.

[0040] The ion suppressor 223 may include a plate or other geometric shape defining a plurality of holes throughout the structure, the plurality of holes being configured to suppress the migration of ionic charged species out of the first plasma region 215 while allowing uncharged neutral or radical species to pass through the ion suppressor 223 into the activated gas delivery region between the suppressor and the showerhead. In embodiments, the ion suppressor 223 may include a perforated plate having various hole configurations. The uncharged species may include highly reactive species that are transported through the holes with a less reactive carrier gas. As described above, the migration of ionic species through the holes may be reduced, and in some cases may be completely suppressed. Controlling the amount of ionic species passing through the ion suppressor 223 may advantageously provide increased control over the gas mixture in contact with the underlying wafer substrate, which in turn may increase control over the deposition and / or etching characteristics of the gas mixture. For example, adjusting the ion concentration of the gas mixture may significantly change its etching selectivity, such as SiNx:SiOx etch rate, Si:SiOx etch rate, etc. In alternative embodiments where deposition is performed, it may also change the balance from conformal to flowable type deposition for dielectric materials.

[0041] The plurality of holes in the ion suppressor 223 may be configured to control the flow of activated gas (i.e., ions, radicals, and / or neutral species) through the ion suppressor 223. For example, the aspect ratio of the holes, or the diameter to length of the holes, and / or the geometry of the holes may be controlled to reduce the flow of charged ion species in the activated gas through the ion suppressor 223. The holes in the ion suppressor 223 may include a conical portion facing the plasma excitation region 215 and a cylindrical portion facing the showerhead 225. The cylindrical portion may be shaped and sized to control the flow of ion species to the showerhead 225. An adjustable electrical bias may also be applied to the ion suppressor 223 as an additional means of controlling the flow of ion species through the suppressor.

[0042] The ion suppressor 223 can function to reduce or eliminate the amount of ionic charged species that travel from the plasma generation region to the substrate. Uncharged neutral and free radical species can still react with the substrate through the openings in the ion suppressor. It should be noted that in embodiments, complete elimination of ionic charged species in the reaction region surrounding the substrate may not be performed. In some cases, ionic species are intended to reach the substrate in order to perform etching and / or deposition processes. In these cases, the ion suppressor can help control the concentration of ionic species in the reaction region to a level that is conducive to the process.

[0043] The showerhead 225 in combination with the ion suppressor 223 can allow the plasma present in the first plasma region 215 to avoid directly exciting the gas in the substrate processing region 233, while still allowing the excited species to travel from the chamber plasma region 215 into the substrate processing region 233. In this way, the chamber can be configured to prevent the plasma from contacting the substrate 255 being etched. This can advantageously protect the various complex structures and films patterned on the substrate, which may be damaged, displaced, or otherwise warped if they are directly contacted by the generated plasma. In addition, the rate of etching of oxide species can be increased when the plasma is allowed to contact the substrate or close to the level of the substrate. Therefore, if the exposed area of ​​the material is an oxide, this material can be further protected by keeping the plasma away from the substrate.

[0044] The processing system may further include a power source 240 electrically coupled to the processing chamber to provide electrical power to the faceplate 217, the ion suppressor 223, the showerhead 225, and / or the pedestal 265 to generate plasma in the first plasma region 215 or the processing region 233. Depending on the process being performed, the power supply may be configured to deliver an adjustable amount of power to the chamber. The configuration may allow a tunable plasma to be used in the process being performed. Unlike a remote plasma unit that typically has an on or off function, a tunable plasma may be configured to deliver a specific amount of power to the plasma region 215. This in turn may allow specific plasma characteristics to be developed so that the precursors may be dissociated in a specific manner to enhance the etch profile produced by the precursors.

[0045] The plasma may be ignited in either the chamber plasma region 215 above the showerhead 225 or the substrate processing region 233 below the showerhead 225. The plasma may be present in the chamber plasma region 215 to generate radical precursors from, for example, an inflow of a fluorine-containing precursor or other precursor. An AC voltage, typically in the radio frequency (RF) range, may be applied between a conductive top portion of the processing chamber, such as the faceplate 217, and the showerhead 225 and / or the ion suppressor 223 to ignite the plasma in the chamber plasma region 215 during deposition. The RF power supply may generate a high RF frequency of 13.56 MHz, but other frequencies may also be generated alone or in combination with the 13.56 MHz frequency.

[0046] Figure 2B A detailed view 253 of features affecting the distribution of process gases through the panel 217 is shown. Figure 2A and Figure 2B2, the faceplate 217, the cooling plate 203, and the gas inlet assembly 205 intersect to define a gas supply region 258 into which process gas may be delivered from the gas inlet 205. The gas may fill the gas supply region 258 and flow to the first plasma region 215 through the holes 259 in the faceplate 217. The holes 259 may be configured to direct the flow in a substantially unidirectional manner such that the process gas may flow into the processing region 233, but may be partially or completely prevented from flowing back into the gas supply region 258 after passing through the faceplate 217.

[0047] The gas distribution assembly used in the processing chamber portion 200, such as the showerhead 225, may be referred to as a dual channel showerhead (DCSH), and is Figure 3 The dual channel showerhead may provide an etch process that allows the etchant to be separated outside of the processing region 233 to provide limited interaction with chamber components and each other before being delivered to the processing region.

[0048] The showerhead 225 may include an upper plate 214 and a lower plate 216. The plates may be coupled to each other to define a volume 218 between the plates. The coupling of the plates may be such that a first fluid passage 219 through the upper and lower plates and a second fluid passage 221 through the lower plate 216 are provided. The formed passages may be configured to provide fluid passage from the volume 218 through the lower plate 216 only via the second fluid passage 221, and the first fluid passage 219 may be fluidically isolated from the volume 218 between the plates and the second fluid passage 221. The volume 218 may be fluidly accessible via a side of the gas distribution assembly 225.

[0049] Figure 3 FIG. 3 is a bottom view of a showerhead 325 for use with a processing chamber according to an embodiment. The showerhead 325 may correspond to Figure 2A The through-holes 365 of the diagram showing the first fluid channel 219 can have a variety of shapes and configurations to control and influence the flow of precursors through the showerhead 225. The small holes 375 of the diagram showing the second fluid channel 221 can be substantially evenly distributed over the surface of the showerhead, even between the through-holes 365, and can help provide more uniform mixing of the precursors as they exit the showerhead than other configurations.

[0050] Steering Figure 4Exemplary operations in a method 400 for manufacturing a showerhead in accordance with some embodiments of the present technology are shown. As described above, some showerheads or chamber components that may be used as electrodes during plasma operation, including plasma generation electrodes or ground electrodes, may be formed from ceramic or dielectric materials, and may include conductive materials combined with or within dielectrics. The showerheads discussed throughout this disclosure may be used as any of the components previously described, including faceplates, ion suppressors, gas distribution assemblies, or other showerheads or manifolds used in chambers as described above, or any other chamber that may utilize such components in plasma operations. Therefore, while certain designs will be shown, it should be understood that the present technology also encompasses many different configurations.

[0051] In some embodiments, during the forming operation, the conductive material may be bonded or embedded in the showerhead. Because some of the components described may be ceramic, the components may be formed in a molding operation, where heat and / or pressure may be used to form the components. For example, sintering may be used to form a showerhead from one or more molded green bodies. In some embodiments of the method 400 for manufacturing a showerhead, a green body may be formed in operation 405, such as two green bodies that may be bonded together and sintered to produce an exemplary showerhead. The green body may be disc-shaped, or it may be characterized by any other shape so as to be placed in an exemplary processing chamber. The green body may be molded to include one or more plug holes or studs, which may allow the two components to be coupled before a sintering operation, and the body may include some larger groups, or may include multiple studs and / or plug holes distributed between the bodies.

[0052] Once the green body is formed, a conductive material may be applied or disposed on one of the green bodies at operation 410. The conductive material may be a mesh, foil, or coating applied to one or both green bodies in a specific area, as will be described below. The conductive material may be preformed to include holes that may have a pattern similar to holes that may be drilled into a showerhead later to provide a gas flow. An exemplary showerhead may include tens, hundreds, or thousands of holes, and thus positioning of the conductive material may be performed to ensure that the formation of the holes does not expose the conductive material. As described above, conductive materials that may be exposed to plasma effluents may be etched, sputtered, or otherwise damaged by the plasma. Therefore, development of an exemplary showerhead may be performed to specifically limit exposure of the conductive material in areas where plasma exposure may occur.

[0053] For example, holes may be formed or drilled through the finished ceramic. Thus, a conductive material may be formed or applied to the green body to include holes that will allow the nozzle holes to be produced without exposing the conductive material. In some embodiments, when the conductive material is located on the green body, the conductive material itself may include holes. For example, a foil including holes to be defined may be produced. Additional holes may correspond to plug holes or studs of the green body, which may provide a positioning function for the foil holes for subsequent machining. As another example, because the green body may be molded, the plug holes and studs may be distributed around the green body mold to correspond to the positions where holes may be produced, which may limit displacement during the sintering operation. For example, a mesh or foil may be press-fitted to the green body around the studs. The mesh tines may be separated around the studs, which may allow the conductive material to be applied evenly on the mold and limit sharp edges when cutting.

[0054] Once the conductive material is applied, the green body may be sintered in operation 415 to produce a showerhead. Sintering may include applying heat and / or pressure to produce a ceramic component. For example, such sintering may include a variety of operations, including low temperature heating followed by high temperature heating. After forming the component, the showerhead may be patterned in operation 420, which may provide holes, channels, and other features during machining to produce the final showerhead. The resulting showerhead may define a plurality of holes in an interior region of the showerhead that may not expose the conductive material included throughout the showerhead. Thus, the showerhead may be used as both a flow distribution component and an electrode while limiting or preventing exposure of the conductive material within the chamber processing region.

[0055] Figure 5A A schematic partial top plan view of an exemplary showerhead 500 is shown in accordance with some embodiments of the present technology. The showerhead may include a dielectric plate 505, which may be, for example, ceramic, and may further include a bonded conductive material 510. Figure 5B A schematic partial cross-sectional view of an exemplary showerhead 500 according to some embodiments of the present technology is shown and may be used in conjunction with Figure 5A 500 are considered together to illustrate various features of the showerhead. As described above, showerhead 500 is merely one exemplary configuration of components encompassed by the present technology. Showerhead 500 illustrates features that may be included in various showerheads according to the present technology, but is not intended to limit other designs similarly encompassed. Showerhead 500 may be any manifold previously discussed, and may be a single-piece component, or in some embodiments may be one of a combination of components to produce a gas distribution assembly as previously described. As previously described, showerhead 500 may be included in a semiconductor processing chamber, or in any other processing chamber or system in embodiments of the present technology.

[0056] As shown, the dielectric plate 505 may be a ceramic plate formed by the method 400 discussed above or by any other method, and may include a bonded conductive material 510. The dielectric plate 505 may include a first surface 507 and a second surface 509, which may be opposite the first surface 507. The dielectric plate 505 may define a plurality of holes 515 through the plate, the holes 515 extending from the first surface 507 through the second surface 509, and may provide a path for the precursor to pass through the showerhead. As described above, after sintering and after the conductive material 510 has been bonded, the holes 515 may be formed by the showerhead. In some embodiments, the holes 515 may not contact or expose the conductive material 510. As shown, the conductive material 510 may extend around some or all of the holes 515. As shown in the figure, the conductive material 510 may extend around some or all of the holes 515. Figure 5B As shown, the conductive material 510 may maintain a spacing or gap 518 around each hole to ensure that the conductive material is not exposed when the hole is formed.

[0057] The dielectric plate 505 may define one or more channels and one or more recessed features, which may be machined after the conductive material 510 is combined. During the sintering operation, the properties and characteristics of the material may change, which may distribute the conductive material, foil or mesh. For example, before sintering, the exact depth of the conductive material 510 within the dielectric plate may be known. However, after sintering, this position may change slightly. The radial gap 518 ensures that any lateral movement can be accommodated during hole formation. However, because the thickness of the conductive material may be only a few hundred nanometers in some embodiments, although any thickness may be used, slight changes in depth may make it challenging to position the conductive material for electrode coupling and for feature formation. For example, some exemplary showerheads may include a recess 520 formed at an inner region of the second surface 509. If the position of the conductive material 510 has shifted during sintering, the conductive material 510 may be accidentally exposed when the recess 520 is formed. The present technology can perform positioning in a variety of ways to limit or prevent exposure of the conductive material in the dielectric plate.

[0058] The dielectric plate 505 may define a first annular channel 525 in the first surface 507 of the dielectric plate 505. The first annular channel 525 may extend around the plurality of holes 515 and may define an interior region 526 of the showerhead. The first annular channel 525 may be configured to seat an O-ring or elastomeric element 527 to create a seal during vacuum operation. Thus, for example, the interior region 526 may be a portion of the showerhead 500 that may be exposed to any process performed within the chamber, such as a plasma process. In some embodiments, the conductive material 510 may not be exposed anywhere in the interior region 526, including where the holes 515 are formed.

[0059] Because the conductive material 510 can be coupled as an electrode, the conductive material can be exposed at least in one location to provide coupling. In some embodiments, the dielectric plate 505 can define a second annular channel 530 in the first surface 507 of the dielectric plate 505. The second annular channel 530 can be configured to house an RF gasket 533 or any other conductive connection that can contact the conductive material 510. The second annular channel 530 can be formed radially outward from the first annular channel 525 and can therefore be positioned outside the processing area of ​​the chamber. Thus, for example, the second annular channel 530 can be unexposed to events occurring within the chamber and can be unexposed to any plasma effluents.

[0060] The conductive material 510 may be exposed at least one location within the second annular channel 530, and may be exposed at a plurality of locations within the second annular channel 530. Because the second annular channel 530 may be formed radially outside the first annular channel 525, the conductive material 510 may extend beyond the first annular channel 525. To prevent the conductive material from being exposed in the first annular channel 525, the second annular channel 530 may be defined within the dielectric plate 505 to a greater depth than the first annular channel 525. Figure 5B As shown, the conductive material 510 may extend beyond the first annular channel 525 at a depth below the first annular channel 525, which may prevent the conductive material from being exposed at the first annular channel. When the RF gasket 533 is disposed within the second annular channel 530, the gasket may contact the conductive material 510 exposed within the channel, which may provide a path to use the conductive material as an electrode within the chamber.

[0061] As described above, the conductive material may be located within the dielectric plate to ensure that the depth of the conductive material is known. Thus, in some embodiments, the second annular channel 530 may be machined or formed prior to other features of the showerhead. The conductive material 510 may extend completely to the outer region of the showerhead, or the conductive material 510 may include one or more wings or tabs 535 extending from a more uniform coverage in the inner region 526 to the outer region where the outer channel 530 may be formed. For example, one or more positioning holes or grooves may be formed down through the outer region to locate the correct depth of the conductive material 510, such as between the tabs 535 when the tabs 535 are included. Once known, the second annular channel 530 may be formed to fully expose the conductive material 510 within the channel. Because the conductive material may extend around the showerhead, and the RF gasket 533 or other electronic coupling may also extend around the showerhead, any perforation of the conductive material in the outer region during positioning will not affect the operation of the conductive material as an electrode due to the multiple contact points around the showerhead.

[0062] The dielectric plate 505 may include any number of materials that may be protected from plasma species bombardment and may be inert to plasma effluents (such as halogen-containing plasma effluents). For example, the dielectric plate 505 may include oxides or nitrides of any number of metals, including aluminum, yttrium, zirconium, silicon, or other elements or combinations. The conductive material may be any number of conductive materials that may be operable or used as an electrode, and may include aluminum, tungsten, molybdenum, tantalum, platinum, titanium, vanadium, or any other material including an alloy of any of the above or other conductive materials. Although some embodiments described below may not include a sintering operation, when a showerhead may be developed according to method 400, the sintering temperature may be much higher than 1000° C. Therefore, metals with lower melting points (such as aluminum, for example) may not be suitable candidates. In addition, the ceramic material and the conductive material may be selected to produce a matching amount related to the sintering temperature to control expansion / contraction during sintering.

[0063] The dielectric plate may also be formed to control the amount of porosity of the resulting showerhead. Because the component may be operated under vacuum conditions, the porosity may be kept relatively low to limit the effects of vacuum conditions or degassing by the showerhead. Similarly, components characterized by higher porosity may be prone to absorbing plasma species, for example, and may require increased conditioning before performing processing. Therefore, in some embodiments, the porosity of the material used for the dielectric plate 505 may be limited to less than about 5%, and in some embodiments, the porosity may be limited to less than or about 3%, less than or about 2%, less than or about 1%, less than or about 0.9%, less than or about 0.8%, less than or about 0.7%, less than or about 0.6%, less than or about 0.5%, less than or about 0.4%, less than or about 0.4%, less than or about 0.3%, less than or about 0.2%, less than or about 0.2%, less than or about 0.1% or less.

[0064] When forming holes before coating, such as when forming holes with many metal parts, smaller holes may not be feasible or complete coating may not occur. However, the larger the hole formed to facilitate coating, the greater the possibility of plasma leakage. The present technology overcomes the problem because the hole can only extend through the dielectric plate 505 without contacting the conductive material 510. Therefore, because the problem of coating is overcome by using a ceramic material, the formation of the hole may not expose the conductive material, so compared with conventional materials, smaller holes that can be subsequently coated can be drilled. Therefore, in some embodiments, the hole 515 may be characterized by a diameter of less than or about 10mm, and in some embodiments, it may be characterized by having a diameter of less than or about 9mm, less than or about 8mm, less than or about 7mm, less than or about 6mm, less than or about 5mm, less than or about 4mm, less than or about 3mm, less than or about 2mm, less than or about 1mm or less. The size of the hole can affect the gap 518 that can be maintained and the amount of travel that may be experienced during formation. Thus, gap 518 (gap 518 may be a radial gap) may extend less than or about 5 mm around each hole, and in some embodiments may extend less than or about 4 mm, less than or about 3 mm, less than or about 2 mm, less than or about 1 mm, less than or about 0.5 mm, or less than about each hole, which can ensure that the conductive material is not exposed during the formation of the holes.

[0065] Showerheads according to the present technology may also include one or more coatings to limit or prevent exposure of the conductive material to the internal chamber environment. Figure 6 Exemplary operations in method 600 according to some embodiments of the present technology are shown. Method 600 can produce showerheads similar to those discussed above, as well as other chamber manifolds or diffusers as described above. Method 600 can include any of the operations of method 400 for manufacturing a dielectric component, and the resulting showerhead can include any of the materials, properties, or characteristics as previously described.

[0066] Similar to method 400, method 600 may include one or more optional operations that may or may not be specifically associated with some embodiments of methods according to the present technology. For example, many operations are described to provide a more comprehensive structure, but are not critical to the technology or may be performed by alternative methods, as will be discussed further below. Method 600 describes 7A to 7C The operation of the exemplary showerhead 700 is schematically shown in a top plan view of the exemplary showerhead 700 in FIG. 6 , which will be described in conjunction with the operation of the method 600. In embodiments of the present technology, the showerhead 700 can be similarly incorporated into any processing chamber. It should be understood that for illustrative purposes, FIG. 7 shows only a general schematic diagram, and the exemplary showerhead can contain any number of holes or structural elements to be described.

[0067] The method 600 may include etching the plate to create holes and other features at operation 605. For example, holes may be drilled through a ceramic or dielectric plate, which may have any of the features, materials, or properties of the showerhead 500 described above. Fig. 7A As shown, when producing the showerhead 700, holes 715 may be drilled or formed through the dielectric board 705. At operation 610, a mesh, foil, print, or spray of a conductive or metallic material may be applied to the board on one or more surfaces. The conductive material may be any conductive material as previously described, and may be positioned or formed on one or more surfaces, such as on a first surface of the showerhead. Figure 7B Conductive material 710 is shown formed on the first surface of the showerhead 700. As shown, although a gap 712 can be maintained around each hole, the conductive material 710 can extend across the first surface of the showerhead. For example, the conductive material can be maintained away from each hole at a first radial distance, which can correspond to any of the gap distances described above. The gap 712 can perform similar features to ensure that the conductive material is not exposed, although the gap can also provide space for a subsequently added coating, as will be described below. The gap can be included in the pre-formed conductive material, or another masking operation can be performed to create the gap.

[0068] The formed holes may then be masked at optional operation 615. Masking may be performed only around the holes and extend a limited distance radially or laterally around each hole. A coating may then be applied at operation 620 to cover the conductive material 710. After the coating is applied, the mask may be removed at optional operation 625. The coating may also be a dielectric material, and may be a second dielectric material in contrast to the first dielectric material of the plate. Figure 7C The showerhead is shown then applying a coating 720 to extend across the conductive material 710. The coating 720 may also be applied to maintain a gap 722 from each hole 715, and the coating 720 may be maintained a second radial distance from each hole. In some embodiments, the second radial distance may be less than the first radial distance, which may ensure that the coating 720 completely covers the conductive material 710.

[0069] Figure 7C It is also shown that the conductive material 710 can be exposed in one or more locations along the outer or radial edge 725 of the showerhead 700. The exposure can occur radially outside of the annular channel 730, which can be where the elastomeric element can be located. The annular channel 730 can be defined radially outside of the hole and can define a boundary between an inner region and an outer region of the showerhead, where the inner region can be exposed within the chamber and the outer region can not be exposed to the chamber processing. Although in Figure 7C, but it should be understood that the channel can be pre-formed during hole formation to ensure continuity of material to allow use as an electrode. Therefore, where the conductive material is exposed at region 725, coupling for electrode operation can be allowed while limiting or preventing exposure of the conductive material within the chamber environment. In some embodiments, a hybrid coating can be applied and can include a first coating applied over the entire showerhead, while a second, thicker coating (such as the second layer described below) may not be applied to the edge region. The thinner coating may allow electrical connection through the coating because of its thickness, although some plasma effluents may be prevented, but the thickness may not be completely insulated from electrical contact. In some embodiments, this option can provide additional flexibility during manufacturing.

[0070] Fig.7D A schematic partial cross-sectional view of an exemplary showerhead according to some embodiments of the present technology is shown, and for example, another view of showerhead 700 may be shown. The figure shows a portion of a showerhead, including dielectric plate 705, conductive material 710, and coating 720, as they may be formed around hole 715. Hole 715 is shown as having chamfered edges, but the figure is merely to illustrate that any hole design may be suitable for any of the present technology, and that showerheads 500, 700, or any other showerhead produced may feature any hole profile.

[0071] Fig.7D 705. A second surface 709 opposite the first surface may not include a conductive material or coating 720, although in some embodiments, the second surface may also include one or more materials. For example, depending on the orientation of the showerhead or chamber assembly, one side of the component may be more exposed to the bombardment and one side may be more exposed to the chemically reactive plasma effluent, and the coating may be applied accordingly, although as described above, the coating may be applied to either or both sides of the showerhead. As shown, the conductive material 710 may be maintained away from the hole 715 by a first distance or gap 712. The coating 720 may be applied over the conductive material 710 and may be applied to a second distance or gap 722, which may be less than the first gap. Therefore, in embodiments of the present technology, the conductive material 710 may be completely covered in the interior area of ​​the showerhead.

[0072] The dielectric material used for both the plate and the coating may be any of the materials previously described, and the conductive material may also be any of the materials previously mentioned. Additionally, in some embodiments, the coating 720 may be a type of hybrid or multilayer coating. For example, a first layer of the coating 720 may be included to limit exposure of the conductive material to a second layer of the coating, which may, for example, limit oxidation or other effects on the conductive material.

[0073] The chamber according to some embodiments of the present technology can be used to perform a modification operation, wherein a bias plasma can be formed in a substrate processing region. This operation can be a physical bombardment of a structure on a substrate, and an inert or less reactive precursor can be used. In addition, reactive etching can be performed by generating reactive plasma effluents in a remote region. The precursor may include a halogen precursor, which may be configured to remove modified materials from the substrate. Therefore, components of the chamber (such as the described showerhead) can be exposed to chemically reactive plasma effluents (such as fluorine, chlorine or other halogen-containing effluents) and ions generated in the bias plasma for physical modification. For example, an exemplary showerhead can be exposed to both plasma effluents (such as bias plasma effluents that contact the surface facing the substrate and are within the hole) and reactive effluents that travel through the hole before interacting with the substrate. Other components described above may also be exposed to one or both plasma effluents, including plasma effluents from the return flow. While conventional components may degrade due to exposure of conductive components to plasma materials, showerheads of the present technology may limit or prevent any exposure of conductive materials while still functioning as plasma electrodes.

[0074] Plasma effluents may have different effects on chamber components. For example, ions may be at least partially filtered out by a showerhead from a chemically reactive plasma effluent generated remotely. However, reactive effluents (such as fluorine-containing effluents) may, for example, cause corrosion of exposed materials, such as by forming aluminum fluoride in conventional component designs. Over time, this process may corrode exposed metal components, requiring replacement. In addition, plasma species formed by the bias plasma in the substrate processing area may impact components, causing physical damage and sputtering, which may erode components over time. Therefore, any of the described components may be affected by chemical corrosion and physical erosion by plasma effluents generated in one or more regions of the chamber.

[0075] Corrosion can be controlled by forming a coating 720 on the material or using some methods of specific materials for the coating. For example, although aluminum may corrode due to exposure to fluorine-containing plasma effluents, aluminum oxide or other coatings or coatings may not corrode when in contact with plasma effluents. Therefore, any of the described components can be coated or protected by anodizing, oxidation, atomic layer deposition, chemical vapor deposition, plasma spraying, chemical nickel plating, electroplated nickel, barium titanate, or any other material that can protect the exposed conductive material from chemical corrosion (such as aluminum, molybdenum, platinum, or any of the previously mentioned materials). Similarly, erosion can be controlled by forming a coating on the material or using some methods of certain materials for the bottom plate 705. For example, a high-performance material (such as yttrium oxide) that may or may not include additional materials (such as aluminum or zirconium) can protect the component from physical damage caused by biased plasma effluents. However, when the structure is exposed to corrosive plasma effluents and erosive plasma effluents, damage to the component may still occur. Therefore, the coating 720 may include the multiple materials described, and the bottom plate 705 may also include additional coatings. In embodiments, the materials may be the same, different, or combined. For example, in some embodiments, coating 720 may include plasma sprayed yttrium oxide and any other materials mentioned to enhance resistance to plasma effluents.

[0076] In addition, the first layer of the hybrid coating 720 may extend conformally across the conductive material 710. As previously explained, the first layer may be a corrosion resistant layer configured to protect the conductive material from reactive etchants (including halogen-containing effluents or etchant materials). In embodiments, the first layer may be or include anodizing, electroless nickel plating, electroplated nickel, aluminum oxide, or barium titanate. Due to the formation process of the corrosion resistant coating, complete coverage of the conductive material may be achieved. The coverage depth may be less than or about 25 μm, and may be less than or about 20 μm, less than or about 15 μm, less than or about 10 μm, less than or about 5 μm, less than or about 3 μm, less than or about 1 μm, less than or about 750 nm, less than or about 500 nm, less than or about 250 nm, less than or about 100 nm, less than or about 50 nm, or less. Because the time to reach increased thickness may be relatively long in some embodiments, the coating thickness may be between about 100 nm and about 300 nm in some embodiments. In embodiments where the thickness of the first layer may be greater than or about 3 μm or about 5 μm, the second layer may not be included.

[0077] A second layer of the hybrid coating may also be included outside of the first layer. The second layer may include yttrium oxide or other high performance materials, such as an electron beam coating or yttrium oxide (including aluminum, zirconium or other materials). The second layer may extend at least partially across the first surface 707, and may extend across the plasma-facing surface of the component. The second layer of the hybrid coating may be characterized by a thickness of less than or about 25 μm, and in some embodiments may be characterized by a thickness of less than or about 20 μm, less than or about 15 μm, less than or about 10 μm, less than or about 5 μm, less than or about 1 μm, less than or about 750 nm, less than or about 500 nm, less than or about 300 nm, less than or about 100 nm or less.

[0078] As previously discussed, a masking operation may be performed prior to applying the coating 720. Because the coating may be applied by a spray mechanism in some embodiments, it may be difficult to deliver through holes of the size described above. Without masking, the coating may not form a complete coating and pitting may occur from inconsistent coatings, which may promote removal of the coating over time during processing and limit the repeatability of the coating. Therefore, in some embodiments where this may be a problem and this may limit the coating to be clearly along the conductive material and the first surface of the plate, masking may be performed.

[0079] If two layers are used, in some embodiments, the plate 705 and / or the conductive material 710 may be textured before forming either or both of the first or second layers of the coating. For example, the coating may have improved adhesion to the textured surface. In some embodiments, the texture may be performed to a depth up to or greater than the depth of either or both layers of the hybrid coating. For example, before applying the first layer, or between the first and second layers of coating, the plate and / or the conductive material may be textured via machining, beading or other sandblasting techniques or other roughening or texturing operations. The texturing may be performed to a depth of at least about 50 nm, and may be performed to a depth of at least about 100 nm, at least about 250 nm, at least about 500 nm, at least about 750 nm, at least about 1 μm, at least about 3 μm, at least about 5 μm, or greater, although the texturing may not extend to a depth greater than the total thickness of the material to limit exposure of the underlying material and ensure coverage.

[0080] Figure 8 800 according to some embodiments of the present technology. The method 800 may include a variation of the showerhead formation discussed above with the method 600. FIG. 9A to FIG. 9B Describe the method, FIG. 9A to FIG. 9BA schematic top plan view of an exemplary showerhead 900 according to some embodiments of the present technology is shown. Method 800 may differ from method 600 in that the holes may be formed after coating in method 800. For example, method 800 may begin at operation 805 by forming a mask over a dielectric board where the holes may then be drilled. After masking, a conductive mesh, foil, or coating may be applied at operation 810, which may be performed by a variety of previously mentioned techniques including metal printing or metal deposition, and which may occur as previously described, and may maintain a gap distance where the holes will then be formed. At operation 815, a coating may be applied over the conductive material, which may maintain a second gap, as previously described.

[0081] Fig. 9A An exemplary spray head subsequent coating at operation 815 may be shown. As shown, spray head 900 may be similar to the spray head discussed with respect to FIG. 7 , although the holes may not be formed through plate 905 . The masking material may be removed at operation 820 , and the holes may then be machined through the plate at operation 825 . Fig. 9B As shown, the final spray head may be similar to the final spray head of FIG. 7 , although the holes 915 are formed after coating.

[0082] Showerheads according to embodiments of the present technology may provide better corrosion and erosion resistance than conventional showerheads that may be based on conductive substrate materials. As described above, by combining the conductive material with or within a ceramic or other dielectric material, operation as an electrode may still be provided while allowing for reduced hole size and improved coverage of the conductive material within the processing chamber, including complete coverage.

[0083] In the foregoing description, for the purpose of explanation, many details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be implemented without some of the details or with other details.

[0084] Several embodiments have been disclosed, and those skilled in the art will recognize that various modifications, alternative structures, and equivalent elements may be used without departing from the spirit of the embodiments. In addition, in order to avoid unnecessary confusion of the present technology, many known processes and elements are not described. Therefore, the above description should not be considered to limit the scope of the present technology. In addition, the method or process may be described as sequential or step-by-step, but it should be understood that the operations may be performed simultaneously or in an order different from the order listed.

[0085] In the case of providing a range of values, it is understood that unless the context clearly indicates otherwise, each intermediate value (to the smallest fraction of the lower limit unit) between the upper and lower limits of the range is also specifically disclosed. Any narrower range between any declared value or undeclared intermediate value and any other declared or intermediate value in the declared range is covered. The upper and lower limits of those smaller ranges may be independently included or excluded in the range, and each range including any one, none, or both of the upper and lower limits in the smaller range is also covered in the present technology, but is subject to any specific exclusion of the limiting specification in the declared range. In the case where the declared range includes one or both of the upper and lower limits, the range excluding any one or both of those included upper and lower limits is also included.

[0086] As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, reference to "a precursor" includes a plurality of such precursors and reference to "the layer" includes reference to one or more layers and equivalents thereof known to those skilled in the art, and so forth.

[0087] Furthermore, when used in this specification and the appended claims, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”, “include(s)” and “including” are intended to specify the presence of stated features, integers, components or operations, but they do not preclude the presence or addition of one or more other features, integers, components, operations, acts or groups.

Claims

1. A semiconductor processing chamber showerhead, comprising: a dielectric plate characterized by a first surface and a second surface opposite the first surface, wherein the dielectric plate defines a plurality of holes through the dielectric plate, wherein the dielectric plate defines a first annular channel in the first surface of the dielectric plate, the first annular channel extending around the plurality of holes, and wherein the dielectric plate defines a second annular channel in the first surface of the dielectric plate, the second annular channel formed radially outward from the first annular channel; as well as A conductive material is embedded within the dielectric plate and extends around the plurality of holes without being exposed by the holes, wherein the conductive material is exposed at the second annular channel.

2. The semiconductor processing chamber showerhead of claim 1, wherein the second annular channel is defined within the dielectric plate to a greater depth than the first annular channel.

3. A semiconductor processing chamber showerhead as described in claim 2, wherein the conductive material extends through the dielectric plate at a depth within the dielectric plate that is greater than the depth of the first annular channel, and wherein the conductive material is exposed by the second annular channel but not by the first annular channel.

4. The semiconductor processing chamber showerhead of claim 1, further comprising an RF gasket disposed within the second annular channel and configured to use the conductive material as an electrode.

5. The semiconductor processing chamber showerhead of claim 1, further comprising an elastomeric element disposed within the first annular channel.

6. The semiconductor processing chamber showerhead of claim 1, wherein the conductive material comprises a foil or mesh extending across an interior region of the showerhead defined by the first annular channel.

7. The semiconductor processing chamber showerhead of claim 6, wherein the conductive material comprises a plurality of tabs extending from the interior region of the showerhead to the second annular channel.

8. A semiconductor processing chamber, comprising: build; a substrate support; as well as a showerhead positioned between the cover and the substrate support, wherein a first plasma region is defined between the showerhead and the cover, wherein a second plasma region is defined between the showerhead and the substrate support, wherein the cover and the substrate support are each coupled to a power source that generates plasma, wherein the showerhead is electrically coupled to ground, and wherein the showerhead comprises: a plate comprising a first dielectric material, the plate being characterized by a first surface and a second surface opposite the first surface, wherein the plate defines a plurality of holes through the plate, and wherein the showerhead defines a first annular channel in the first surface of the plate radially outward of the plurality of holes; as well as An electrically conductive material is bonded to the plate, wherein exposure of the electrically conductive material is limited to an area radially outward of the first annular channel.

9. A semiconductor processing chamber as described in claim 8, wherein the plate defines a second annular channel in the first surface of the plate, the second annular channel is formed radially outward from the first annular channel, and wherein the conductive material is embedded in the plate and exposed by the second annular channel, wherein the second annular channel is defined in the plate to a greater depth than the first annular channel, wherein the conductive material extends through the plate in the plate to a depth greater than the depth of the first annular channel, and wherein the conductive material is exposed by the second annular channel but not by the first annular channel.

10. The semiconductor processing chamber of claim 9, further comprising: an RF gasket disposed within the second annular channel and configured to electrically couple the conductive material to ground; as well as An elastomeric element is disposed in the first annular channel.

11. The semiconductor processing chamber of claim 8, wherein the conductive material is disposed on the first surface of the plate, wherein the conductive material is maintained at a first radial distance from each of the plurality of holes, the showerhead further comprising: A coating comprising a second dielectric material, wherein the coating extends across the conductive material, and wherein the coating is maintained at a second radial distance from each of the plurality of holes, wherein the second radial distance is less than the first radial distance.

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