Lithographic printing system and method of operating the same

By setting up a shield near the photomask and using a radiation-absorbing coating and cooling components, the problem of pattern deformation caused by thermal expansion of the photomask was solved, improving the exposure accuracy and pattern accuracy of the offset printing system.

CN113767335BActive Publication Date: 2025-01-14KULICKE & SOFFA LITEQ BV
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Patent Information

Application Number
CN202080027576.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-04-09
Filing Date
2020-02-26
Publication Date
2025-01-14
Estimated Expiration
2040-02-26

AI Technical Summary

Technical Problem

In traditional offset printing systems, the photomask expands and deforms due to radiation absorption, causing the pattern to be distorted and projected onto the working parts, affecting exposure accuracy.

Method used

A shield is set up near the photomask, a radiation-absorbing coating and cooling components are used to define the irradiation area, and heat is removed through cooling channels or radiators to prevent thermal expansion of the photomask.

Benefits of technology

It effectively prevents photomask deformation, improves exposure accuracy and pattern accuracy, and reduces stray light and ghosting effects.

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Abstract

The present invention provides a lithography system for projecting an image onto a workpiece using radiation. The lithography system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image onto the workpiece; a photomask disposed between the radiation source and the workpiece; and a shield disposed adjacent to the photomask, the shield configured to block radiation from the radiation source, the shield including a heat removal device.
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Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of priority to U.S. Provisional Application No. 62 / 831,381, filed on April 9, 2019, the contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a lithography system and, more particularly, to thermal energy in the region of a reticle of a lithography system. Background Art

[0004] In lithography applications, radiation provided by a radiation source is used to expose a field on a workpiece (e.g., a wafer). Often, it is desirable to expose not only a complete field on the workpiece, but also partial fields (e.g., for alignment marks on the workpiece).

[0005] Conventional systems (including some form of reticle masking) are shown, for example, in U.S. Pat. No. 6,348,303 and U.S. Pat. No. 7,382,439. Such systems include reticle masking using blades in the system's illuminator, and not adjacent to the reticle.

[0006] Certain conventional lithography systems include a photomask having a light shielding layer (e.g., a chrome layer) that absorbs a portion of the radiation from the lithography system's radiation source. This radiation absorption causes the photomask to heat up, thereby deforming the photomask due to thermal expansion, resulting in a deformation of the pattern that is projected onto the workpiece.

[0007] It would therefore be desirable to provide an improved lithography system (and related methods) that overcomes one or more of the deficiencies of conventional systems. Summary of the invention

[0008] According to an exemplary embodiment of the present invention, a lithography system for projecting an image onto a workpiece using radiation is provided. The lithography system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image onto the workpiece; a mask disposed between the radiation source and the workpiece; and a shield disposed adjacent to the mask, the shield configured to block radiation from the radiation source, the shield including a heat removal device.

[0009] According to another exemplary embodiment of the present invention, a lithography system for projecting an image onto a workpiece using radiation is provided. The lithography system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image onto the workpiece; a photomask disposed between the radiation source and the workpiece; and a shield disposed adjacent to the photomask, the shield configured to block radiation from the radiation source, wherein the shield includes: a body portion; and a radiation absorbing coating applied to at least a portion of an outer surface of the body portion.

[0010] According to another exemplary embodiment of the present invention, a lithography system for projecting an image onto a workpiece using radiation is provided. The lithography system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image onto the workpiece; a mask disposed between the radiation source and the workpiece; and a shield disposed adjacent to the mask. The shield is configured to block radiation from the radiation source. The shield defines an illumination area of ​​the image to be projected onto the workpiece using a pattern of the mask and radiation from the radiation source. The illumination area defined by the shield can vary.

[0011] According to another exemplary embodiment of the present invention, a lithography system for projecting an image onto a workpiece using radiation is provided. The lithography system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image onto the workpiece; a mask disposed between the radiation source and the workpiece; and a shield disposed adjacent to the mask. The shield is configured to block radiation from the radiation source. The shield defines an irradiation area of ​​the image to be projected onto the workpiece using a pattern of the mask and radiation from the radiation source. The shield includes a plurality of components configured to define the irradiation area, wherein at least one of the components is disposed above the mask along a z-axis of the lithography system, and at least another of the components is disposed below the mask along the z-axis of the lithography system.

[0012] According to another exemplary embodiment of the present invention, a method of operating a lithography system is provided.

[0013] The method includes the following steps: (a) supporting a workpiece using a support structure of the lithography system; (b) projecting an image onto the workpiece using radiation from a radiation source of the lithography system; (c) positioning a photomask between the radiation source and the workpiece; (d) positioning a shield adjacent to the photomask, the shield configured to block radiation from the radiation source; and (e) removing heat energy from at least one of the shield and the photomask using a heat removal device of the shield.

[0014] According to another exemplary embodiment of the present invention, a method of operating a lithography system is provided.

[0015] The method includes the following steps: (a) supporting a workpiece using a support structure of the lithography system; (b) projecting an image onto the workpiece using radiation from a radiation source of the lithography system; (c) disposing a photomask between the radiation source and the workpiece; (d) disposing a shield adjacent to the photomask, the shield being configured to block radiation from the radiation source, wherein the shield includes: a main body; and a radiation absorbing coating applied to at least a portion of an outer surface of the main body.

[0016] According to another exemplary embodiment of the present invention, a method for operating a lithography system is provided. The method includes the following steps: (a) supporting a workpiece using a support structure of the lithography system; (b) projecting an image onto the workpiece using radiation from a radiation source of the lithography system; (c) placing a mask between the radiation source and the workpiece; (d) placing a shield adjacent to the mask, the shield configured to block radiation from the radiation source, the shield using a pattern of the mask and radiation from the radiation source to define an irradiation area of ​​the projected image, and the irradiation area defined by the shield can be varied.

[0017] According to another exemplary embodiment of the present invention, a method for operating a lithography system is provided. The method includes the following steps: (a) supporting a workpiece using a support structure of the lithography system; (b) projecting an image onto the workpiece using radiation from a radiation source of the lithography system; (c) disposing a mask between the radiation source and the workpiece; (d) disposing a shield adjacent to the mask, the shield configured to block radiation from the radiation source, the shield defining an illumination area of ​​the projected image using a pattern of the mask and radiation from the radiation source, the shield comprising a plurality of components configured to define the illumination area, wherein at least one of the components is disposed above the mask along a z-axis of the lithography system, and at least another of the components is disposed below the mask along the z-axis of the lithography system. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The present invention is best understood by reading the following detailed description in conjunction with the accompanying drawings. It should be emphasized that, according to common practice, the various features of the drawings are not drawn to scale. On the contrary, the dimensions of the various features are arbitrarily expanded or reduced for clarity. The following figures are included in the drawings:

[0019] Figure 1A side view of a lithography system is shown according to an exemplary embodiment of the present invention;

[0020] Figure 2 is a perspective view illustrating a portion of a lithography system according to an exemplary embodiment of the present invention;

[0021] Figure 3A A top view of a portion of a lithography system is illustrated according to another exemplary embodiment of the present invention;

[0022] Figure 3B A top view of a portion of a lithography system is illustrated according to yet another exemplary embodiment of the present invention;

[0023] Figure 3C A top view of a portion of a lithography system is illustrated according to yet another exemplary embodiment of the present invention;

[0024] Figure 4 A top view of a portion of a lithography system is illustrated according to yet another exemplary embodiment of the present invention;

[0025] Figure 5A is a top view illustrating a portion of a photomask of a lithography system according to an exemplary embodiment of the present invention;

[0026] Figure 5B A top view of a portion of a photomask of a lithography system is illustrated according to another exemplary embodiment of the present invention;

[0027] Figure 5C A top view of a portion of a photomask of a lithography system is illustrated according to yet another exemplary embodiment of the present invention;

[0028] Figure 5D A top view of a portion of a photomask of a lithography system is illustrated according to yet another exemplary embodiment of the present invention;

[0029] Figure 5E A top view of a portion of a photomask of a lithography system is illustrated according to yet another exemplary embodiment of the present invention;

[0030] Fig. 6A A side view illustrating a portion of a lithography system according to an exemplary embodiment of the present invention;

[0031] Figure 6B is a side view illustrating a portion of a lithography system according to another exemplary embodiment of the present invention; and

[0032] Figure 6C FIG. 1 is a side view illustrating a portion of a lithography system according to yet another exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0033] As previously mentioned, in many lithography applications, it is desirable to expose not only the entire area, but also partial areas at the same time (e.g., for alignment marks on a workpiece or edge exposure protection, etc.). According to certain exemplary embodiments of the present invention, this can be achieved using a mask shielding module. Such a module can include four components / blades (or other number of components / blades) to define the shielded exposure area. In high-resolution lithography using high numerical aperture (NA) lenses, a mask shielding module can be set in the reflector. In lithography systems with lower numerical apertures, the mask shielding blades can be placed adjacent to (adjacent to) the mask. To prevent stray light (and other related harmful effects), the shielding components / blades (and / or the shielding portion of the mask) can use a light-absorbing coating (e.g., an inorganic black coating that absorbs radiation instead of reflecting radiation to prevent stray light from generating ghost images, etc.) to absorb a portion of the light energy, resulting in high temperatures around the mask. In this case, it is desirable to use a shield cooling component for cooling at least one of the shield (including the aforementioned components / blades) and the mask. This can be achieved by providing internal forced convection cooling channels in a portion of the shield, for example. By adding additional holes in the blades facing the exposure portion of the reticle, the same convection air can be used to cool the reticle.

[0034] Figure 1 A lithography system 100 is described that uses radiation to project an image onto a workpiece 104. The lithography system 100 includes a support structure 102 (e.g., a wafer stage) for supporting a workpiece 104 (e.g., a wafer, panel, panel, or other workpiece). The lithography system 100 also includes a radiation source 118 (e.g., a mercury lamp, a laser, etc.) for providing radiation to project an image onto the workpiece 104. Figure 1 1, radiation (represented by a line including a downward arrow) passes through other components of the lithography system 100. More specifically, radiation from a radiation source 118 passes through a beam delivery system 116 and a reflector 114, both of which are included in the lithography system 100. The beam delivery system 116 directs radiation from the radiation source 118 toward an inlet of the reflector 114 and typically includes a suitable guide mirror. The reflector 114 provides a conditioned radiation beam to the reticle 110, the conditioned radiation beam having a profile having a desired uniformity and intensity distribution. Downstream of the reflector 114, the lithography system 100 also includes a projection system 106 for projecting radiation before the workpiece 104 receives the radiation.

[0035] The photomask 110 is disposed between the radiation source 118 and the working part 104. The photomask 110 is supported by the photomask stage 108. The photomask pattern 110a is disposed on the photomask 110 (eg, see Figures 6A-6C The lithography system 100 also includes a shield 112 disposed adjacent to the reticle 110. The shield 112 is configured to block specific radiation from the radiation source 118 (the remainder of the radiation passes through the shield 112 and continues toward the downstream end of the workpiece 104). For example, the shield 112 can define an illumination area of ​​an image to be projected onto the workpiece 104 using the pattern of the reticle and the radiation from the radiation source 118.

[0036] According to the present invention, the shield 112 has various embodiments and relationships (eg, spatial relationships) with the mask 110 . Figure 1 It is used to generally represent these different embodiments. Figure 2 , Figures 3A-3C , Figure 4 , Figures 5A-5E ,and Figures 6A-6C Provide specific examples of shielding, these various examples may be included in Figure 1 Therefore, in Figure 1 The shield 112 in FIG. 1 is depicted around the mask 110 (eg, the shield 112 may be located above the mask 110 , the shield 112 may be located below the mask 110 , the shield 112 may be located partially above the mask 110 and partially below the mask 110 , etc.).

[0037] For example, according to various exemplary embodiments of the present invention, the shield 112 may include a plurality of components (e.g., blades or other components) that collectively define an illumination area of ​​an image to be projected onto the workpiece using the pattern of the mask and the radiation from the radiation source. In a specific example, Figure 2 A shield 112a is shown that includes a plurality of components 112a1, 112a2, 112a3, 112a4. Each of the components 112a1, 112a2, 112a3, 112a4 can be independently moved along at least one of the x-axis and the y-axis of the lithography system 100 using a respective actuator 202a1, 202a2, 202a3, 202a4. Figure 2In the embodiment, the lithography system also includes a controller 200 for controlling the respective drivers 202a1, 202a2, 202a3, 202a4. Through the actuation of the components 112a1, 112a2, 112a3, 112a4 (via the controller 200 and the drivers 202a1, 202a2, 202a3, 202a4), the required irradiation area is defined by the components 112a1, 112a2, 112a3, 112a4. Therefore, using the pattern of the mask and the radiation from the radiation source, the irradiation area of ​​the image to be projected onto the workpiece can be adjusted as required.

[0038] Figures 3A-3C For reference Figure 2 Variations of the described embodiments. Figure 3A In the embodiment, the shield 112b includes a plurality of components 112b1, 112b2, 112b3, 112b4. Each of the components 112b1, 112b2, 112b3, 112b4 can be independently moved along at least one of the x-axis and the y-axis of the lithography system 100 using a respective driver 302a1, 302a2, 302a3, 302a4 (and a controller 300a for controlling each driver 302a1, 302a2, 302a3, 302a4). Therefore, the irradiation area 304a defined by the shield 112b can be adjusted. Figure 3A In the embodiment, each component 112b1, 112b2, 112b3, 112b4 is disposed above the mask 110 along the z-axis of the lithography system.

[0039] exist Figure 3B In the embodiment, the shield 112c includes a plurality of components 112c1, 112c2, 112c3, 112c4. Each of the components 112c1, 112c2, 112c3, 112c4 can be independently moved along at least one of the x-axis and the y-axis of the lithography system 100 using a respective driver 302b1, 302b2, 302b3, 302b4 (and a controller 300b for controlling each driver 302b1, 302b2, 302b3, 302b4). Therefore, the irradiation area 304b defined by the shield 112c can be adjusted. Figure 3B In the embodiment, each component 112c1, 112c2, 112c3, 112c4 is disposed below the photomask 110 along the z-axis of the lithography system.

[0040] exist Figure 3CIn the embodiment of the present invention, the shield 112d includes a plurality of components 112d1, 112d2, 112d3, 112d4. Each of the components 112d1, 112d2, 112d3, 112d4 can be independently moved along at least one of the x-axis and the y-axis of the lithography system 100 using a respective driver 302c1, 302c2, 302c3, 302c4 (and a controller 300c for controlling each driver 302c1, 302c2, 302c3, 302c4). Therefore, the irradiation area 304c defined by the shield 112d can be adjusted. Figure 3C In the embodiment, each component 112d1, 112d3 is disposed above the mask 110 and each component 112d2, 112d4 is disposed below the mask 110 along the z-axis of the lithography system. By disposing some of the components 112d1, 112d2, 112d3, 112d4 above the mask 110 and disposing other parts of the components 112d1, 112d2, 112d3, 112d4 below the mask 110, a minimized component 112d1, 112d2, 112d3, 112d4 and a mask pattern (e.g., see Figures 6A-6C The advantage of the distance between the reticle patterns 110a in FIG. 1 is that the size of the half shadow is limited. The half shadow is the transition from full illumination to full blocking of radiation. The smaller the penumbra, the smaller the separation between different illumination patterns on the reticle on the reticle.

[0041] Figure 4 Shield 112e is shown relative to reticle 110. Shield 112e includes a plurality of body portions 112e1, 112e2, 112e3 (wherein the body portions may be formed from a single piece of material or from a plurality of structures). At each body portion, shield 112e defines a corresponding one of illumination areas 404a1, 404a2, 404a3, each of which defines an image to be projected onto a workpiece using the pattern of reticle 110 and radiation from a radiation source. Shield 112e may be moved in the xy plane of lithography system 100 using controller 400 and driver 402 to select one of illumination areas 404a1, 404a2, 404a3 as currently used.

[0042] Although not essential within the scope of the present invention, each Figures 3A-3C and Figure 4 The illustration includes a body portion (e.g., a portion of the hood that may be referred to as a "heat extractor") that defines cooling passages that receive cooling fluid from a fluid source (not shown) and direct the cooling fluid (e.g., cooling air, as indicated by "AF" representing air flow) to the hood.

[0043] Thus, in certain exemplary embodiments of the present invention, the shield 112 includes a "heat removal device." Within the scope of the present invention, such a heat removal device may be any type of system or component for removing thermal energy from at least one of the shield and the reticle. Examples of such a heat removal device include: a) a body portion of the shield defining at least one cooling channel configured to receive a cooling fluid from a fluid source, wherein the cooling fluid (e.g., air, etc.) is directed to the reticle; b) a body portion of the shield defining at least one cooling channel configured to receive a cooling fluid from a fluid source, wherein the cooling fluid (e.g., air, liquid, etc.) is used to cool the shield; c) a heat sink coupled to the body portion of the shield (e.g., via a thermally conductive braid); and d) a conduit coupled to the body portion of the shield, the conduit configured to direct the cooling fluid toward the reticle. Of course, other heat removal devices may be implemented within the scope of the present invention.

[0044] Figure 5A A top view of a shielded component 112'a (eg, a blade) may be Figure 2 , Figures 3A-3C , Figure 4 112a, 112b, 112c, 112d, 112e. Component 112'a includes a body portion 500a that defines a plurality of cooling channels 502a that are configured to receive a cooling fluid from a fluid source (wherein the fluid enters the fluid source via an "inlet" not shown), wherein the cooling fluid (e.g., air or other cooling gas) exits the body portion 500a from an outlet 502a1 and is directed toward the mask (e.g., Figure 2 , Figures 3A-3C , Figure 4 , similarly indicated by arrows “AF”).

[0045] Figure 5B A top view of a shielded component 112'b (eg, a blade) may be Figure 2 , Figures 3A-3C , Figure 4 112a, 112b, 112c, 112d, 112e as shown. Component 112'b includes a body portion 500b, the body portion 500b defining a plurality of cooling channels 502b, the cooling channels 502b configured to receive a cooling fluid from a fluid source (wherein the fluid enters from the fluid source via an "inlet", not shown), wherein the cooling fluid (e.g., air or other cooling gas) exits the body portion 500b from an outlet 502b1 and is directed toward the mask (e.g., Figure 2 , Figures 3A-3C , Figure 4 , similarly indicated by arrows “AF”). Figure 5B and Figure 5AThe difference is that the cooling channel 502b is distributed in a more significant part of the body 500b before reaching the outlet 502b1. Figure 5B In the embodiment, a deliberate cooling function is provided to the portion of the main body 500b before the cooling fluid leaves the main body 500b through the outlet 502b1.

[0046] Figure 5C A top view of a shielded component 112'c (eg, a blade) may be Figure 2 , Figures 3A-3C , Figure 4 112a, 112b, 112c, 112d, 112e. Component 112'c includes a body portion 500c that defines a plurality of cooling channels 502c that are configured to receive a cooling fluid from a fluid source (wherein the fluid enters from the fluid source through an "inlet" not shown), wherein the cooling fluid (e.g., air or other cooling gas) exits the body portion 500c from an outlet 502c1 and is directed toward the mask (e.g., Figure 2 , Figures 3A-3C , Figure 4 , also indicated by arrows "AF"). Figure 5B ,exist Figure 5C In the embodiment, before reaching the outlet 502c1, the cooling channel 502c is distributed in a more significant portion of the body portion 500c to provide a cooling function for the portion of the body portion 500c. Figure 5C In the figure, the cooling channel 502c includes a return channel, which guides the cooling fluid back to the fluid source (for simplicity, the fluid source is not shown in the figure) through the "return port".

[0047] Figure 5D A top view of a shielded component 112'd (eg, a blade) may be Figure 2 , Figures 3A-3C , Figure 4 Component 112'd includes a body portion 500d defining a plurality of cooling channels 502d configured to receive a cooling fluid from a fluid source (wherein the fluid enters from the fluid source via an "inlet", not shown), wherein the cooling fluid (e.g., air, liquid, or other cooling fluid) is distributed over a more significant portion of the body portion 500d (the fluid source is not shown for simplicity) before the cooling fluid (e.g., air, liquid, or other cooling fluid) is returned to the fluid source via one or more return channels that direct the cooling fluid back to the fluid source via a "return port".

[0048] Figure 5E A top view of a shielded component 112'e (eg, a blade) may be Figure 2 , Figures 3A-3C , Figure 4 Any shield 112a, 112b, 112c, 112d, 112e is shown. The assembly 112'e includes a body portion 500e and a separate heat sink 504 coupled to the body portion 500e of the shield. Figure 5E In the example shown, the heat sink 504 is coupled to the body portion 500e via a thermally conductive braid 506. The heat sink 504 may include active cooling (eg, air cooling, etc.) and / or may include fixed cooling elements (eg, cooling fins, etc.).

[0049] In other examples, the heat removal device may include a conduit (or other cooling fluid carrying structure) coupled to the body portion of the shield, wherein the conduit is configured to direct the cooling fluid toward the reticle.

[0050] Figures 6A-6C 1 is a side view block diagram illustrating an example of directing a cooling fluid toward a photomask, wherein the example is applicable to any embodiment of the present invention for directing a cooling fluid toward a photomask (e.g., Figure 2 , Figures 3A-3C , Figure 4 , Figures 5A-5E etc.) Fig. 6A In the case of Figure 1 Shielded component 112' (eg, blade) includes cooling passage 502' through which cooling fluid "AF" moves and through outlet 502" toward reticle 110 (including reticle pattern 110a).

[0051] In addition to the radiation absorbing coating 600 (e.g., an inorganic black coating), Figure 6B Similar to Fig. 6A (and having similar component numbers), the radiation absorbing coating 600 is applied to at least a portion of the exterior surface of the body portion of the component 112'a. This coating absorbs radiation from the radiation source 118 (e.g., see Figure 1 ) causes undesirable heating at or around the reticle 110 (including the reticle pattern 110a). The cooling fluid "AF" moves in the cooling channel 502'a (and exits from the outlet 502"a) to at least partially provide a cooling function for this heating.

[0052] Figure 6C Draw (such as Fig. 6A ) component 112', but in Figure 6CIn FIG. 1 , a conduit 602 (defining a path 602' for a cooling fluid) is coupled (directly or indirectly) to the component 112'. The cooling fluid "AF" moves in the path 602' and exits the component 112' at an outlet 602" to be directed to the mask 110 (including the mask pattern 110a).

[0053] According to an exemplary embodiment of the present invention, a shield of a lithography system is disposed adjacent to a photomask. With reference to the z-axis of the lithography system, "adjacent" means at least one of the following: a) along the z-axis, the shield is within 100 mm from the photomask; b) along the z-axis, the shield is within 50 mm from the photomask; c) along the z-axis, the shield is within 30 mm from the photomask, and d) along the z-axis, the shield is within 10 mm from the photomask.

[0054] Although the present invention is illustrated and described with reference to exemplary embodiments herein, it will be appreciated by those skilled in the art that the above and various other changes, omissions, and additions may be made thereto within the spirit and equivalent scope of the claims. Conversely, various modifications may be made to the details within the equivalent scope and field of the claims and without departing from the present invention.

Claims

1. A lithographic printing system for projecting an image onto a workpiece using radiation, the lithographic printing system comprising: a supporting structure for supporting a working component; a radiation source for providing radiation to project an image onto the workpiece; a light shield disposed between the radiation source and the working component; as well as a shield disposed adjacent to the hood, the shield configured to block radiation from the radiation source, the shield including a heat removal device, The heat removal device includes a body portion, the body portion defines at least one cooling channel, and the at least one cooling channel is configured to receive a cooling fluid from a fluid source. The heat dissipation device guides the cooling fluid toward the photomask.

2. The lithography system of claim 1, wherein: The cooling fluid is air, and the fluid source is an air supply source.

3. The lithography system of claim 1, wherein: The cooling fluid is a liquid, and the fluid source is a cooling liquid supply source.

4. The lithography system of claim 1, wherein: The body portion defines a plurality of cooling channels configured to receive the cooling fluid from the fluid source.

5. The lithography system of claim 4, wherein: The heat removal device includes at least one return channel, and the at least one return channel guides the cooling fluid to return the cooling fluid to the fluid source.

6. The lithography system of claim 4, wherein: After the cooling fluid provides cooling to at least a portion of the shield, the cooling fluid is directed by the heat extraction device toward the reticle.

7. The lithography system of claim 1, wherein: The shield includes a plurality of components that integrally define an illumination area of ​​an image to be projected onto the workpiece using a pattern of the mask and radiation from the radiation source, at least one of the plurality of components including at least a portion of the heat extraction device.

8. The lithography system of claim 7, wherein: At least one of the plurality of components is disposed above the photomask along a z-axis of the lithography system, and at least another one of the plurality of components is disposed below the photomask along the z-axis of the lithography system.

9. The lithography system of claim 7, wherein: At least one of the plurality of components is movable relative to another of the plurality of components such that a size of the irradiated area can be adjusted.

10. The lithography system of claim 7, wherein: The plurality of components include a plurality of blades.

11. The lithography system of claim 1, wherein: The mask includes a plurality of components configured to define an illumination area of ​​an image to be projected onto the workpiece using a pattern of the reticle and radiation from the radiation source.

12. The lithography system of claim 11, wherein: At least some of the plurality of components are movable relative to each other such that the illumination area is variable.

13. The lithography system of claim 1, wherein: The mask defines an illumination area of ​​an image to be projected onto the workpiece using a pattern of the reticle and radiation from the radiation source.

14. The lithography system of claim 13, wherein: The mask is movable in an xy plane of the lithography system so that a position of the illumination area can be varied.

15. The lithography system of claim 1, wherein: The mask defines a plurality of illumination areas, each of the illumination areas being configured to define an image to be projected onto the workpiece using a pattern of the mask and radiation from the radiation source.

16. The lithography system of claim 15, wherein: The mask is movable in an xy plane of the lithography system to select from among the illumination areas.

17. The lithography system of claim 1, wherein: The shield includes: A radiation absorbing coating is applied to at least a portion of an exterior surface of the body portion.

18. The lithography system of claim 17, wherein: The radiation absorbing coating is an inorganic black coating.

19. The lithography system of claim 1, wherein: The heat dissipation device includes a radiator coupled to the main body.

20. The lithography system of claim 19, wherein: The heat sink is coupled to the main body of the shield via a thermally conductive braid.

21. The lithography system of claim 19, wherein: The heat sink receives the cooling fluid for providing cooling to the shield.

22. The lithography system of claim 1, wherein: The heat dissipation device includes a conduit coupled to the body portion, and the conduit is configured to guide the cooling fluid toward the photomask.

23. The lithography system of claim 1, wherein: The shield is positioned within 100 mm of the reticle along a z-axis of the lithography system.

24. A lithographic system for projecting an image onto a workpiece using radiation, the lithographic system comprising: a supporting structure for supporting a working component; a radiation source for providing radiation to project an image onto the workpiece; a light shield disposed between the radiation source and the working component; as well as a shield disposed adjacent to the reticle, the shield configured to block radiation from the radiation source, The shield includes: a heat dissipation device, wherein the heat dissipation device includes a conduit coupled to a main body of the shield, and the conduit is configured to guide a cooling fluid toward the photomask.

25. The lithography system of claim 24, wherein: The shield is positioned within 100 mm of the reticle along a z-axis of the lithography system.

26. The lithography system of claim 24, wherein: A radiation absorbing coating is applied to at least a portion of an exterior surface of the body portion of the shield, wherein the radiation absorbing coating is an inorganic black coating.

27. A lithographic system for projecting an image onto a workpiece using radiation, the lithographic system comprising: a supporting structure for supporting a working component; a radiation source for providing radiation to project an image onto the workpiece; a light shield disposed between the radiation source and the working component; as well as a shield disposed adjacent to the reticle, the shield configured to block radiation from the radiation source, the shield using a pattern of the reticle and radiation from the radiation source to define an illumination area of ​​the image to be projected onto the workpiece, the illumination area defined by the shield being variable, the shield including a heat removal device, wherein the heat removal device includes a body portion defining at least one cooling channel, the at least one cooling channel configured to receive a cooling fluid from a fluid source, The heat dissipation device guides the cooling fluid toward the photomask.

28. The lithography system of claim 27, wherein: The shield includes a plurality of components configured to define the illumination area, at least one of the components being movable relative to the rest of the components such that the illumination area is variable.

29. A lithographic system for projecting an image onto a workpiece using radiation, the lithographic system comprising: a supporting structure for supporting a working component; a radiation source for providing radiation to project an image onto the workpiece; a light shield disposed between the radiation source and the working component; as well as a shield disposed adjacent to the reticle, the shield configured to block radiation from the radiation source, the shield using a pattern of the reticle and radiation from the radiation source to define an illumination area of ​​the image to be projected onto the workpiece, the shield including a plurality of components configured to define the illumination area, the shield including a heat removal device, wherein the heat removal device includes a body portion, the body portion defining at least one cooling channel, the at least one cooling channel configured to receive a cooling fluid from a fluid source, wherein the heat dissipation device guides the cooling fluid toward the photomask, At least one of the plurality of components is disposed above the photomask along a z-axis of the lithography system, and at least another one of the plurality of components is disposed below the photomask along the z-axis of the lithography system.

30. The lithography system of claim 29, wherein: (i) the plurality of components disposed above the photomask along the z-axis of the lithography system include a pair of components configured to move relative to each other along an x-axis of the lithography system, and (ii) the plurality of components disposed below the photomask along the z-axis of the lithography system include a pair of components configured to move relative to each other along a y-axis of the lithography system.

31. A method of operating a lithography system, the method comprising the steps of: (a) supporting a working part using a support structure of the lithography system; (b) projecting an image onto the workpiece using radiation from a radiation source of the lithography system; (c) placing a light shield between the radiation source and the working part; (d) disposing a shield adjacent to the photomask, the shield configured to block radiation from the radiation source; as well as (e) removing thermal energy from at least one of the shield and the reticle using a heat removal device of the shield, wherein step (e) includes directing a cooling fluid from the heat removal device toward the reticle.

32. The method of claim 31, wherein: The step (e) includes removing thermal energy from each of the shield and the photomask using the heat extraction device of the shield.

33. The method of claim 31, wherein: The shield comprises a plurality of components.

34. The method of claim 33, wherein: The step (d) includes positioning at least one of the plurality of components above the photomask along a z-axis of the lithography system, and positioning at least another one of the plurality of components below the photomask along the z-axis of the lithography system.

35. The method of claim 33, wherein: At least one of the plurality of components is movable relative to another of the plurality of components, the mask using a pattern of the mask and radiation from the radiation source to define an illumination area of ​​an image to be projected onto the workpiece, the method further comprising the steps of: (f) adjusting a size of the irradiated area by moving at least one of the plurality of components.

36. The method of claim 31, wherein: The mask defines an illumination area of ​​an image to be projected onto the workpiece using a pattern of the mask and radiation from the radiation source, the method further comprising the steps of: (f) Moving the mask in an xy plane of the lithography system so that a position of the illumination area can be varied.

37. The method of claim 31, wherein: The mask defines a plurality of illumination areas, each of the illumination areas being configured to define an image to be projected onto the workpiece using a pattern of the mask and radiation from the radiation source.

38. The method of claim 37, further comprising the steps of: (f) moving the mask in an xy plane of the lithography system to select from among the exposure areas.

39. The method of claim 31, wherein: The shield includes: a main body; and A radiation absorbing coating is applied to at least a portion of an exterior surface of the body portion.

40. The method of claim 31, wherein: The heat removal device includes a heat sink, and step (e) includes removing heat energy from at least one of the shield and the photomask by coupling the heat sink to a body portion of the shield.

41. The method of claim 40, wherein: The step (e) includes coupling the heat sink to the body portion of the shield via a thermally conductive braid.

42. The method of claim 31, wherein: The heat removal device includes a conduit coupled to a body portion of the shield, and step (e) includes directing the cooling fluid from the conduit toward the reticle.

43. A method of operating a lithography system, the method comprising the steps of: (a) supporting a working part using a support structure of the lithography system; (b) projecting an image onto the workpiece using radiation from a radiation source of the lithography system; (c) placing a light shield between the radiation source and the working part; (d) disposing a shield adjacent to the photomask, the shield configured to block radiation from the radiation source; as well as (e) removing thermal energy from at least one of the shield and the photomask using a heat removal device of the shield, wherein step (e) comprises directing a cooling fluid from the heat removal device toward the photomask, Among them, the shielding includes: a main body; and a radiation absorbing coating applied to at least a portion of an exterior surface of the body portion, wherein step (d) comprises: The shield was positioned within 100 mm of the reticle along a z-axis of the lithography system.

44. A method of operating a lithography system, the method comprising the steps of: (a) supporting a working part using a support structure of the lithography system; (b) projecting an image onto the workpiece using radiation from a radiation source of the lithography system; (c) placing a light shield between the radiation source and the working part; (d) disposing a shield adjacent to the reticle, the shield configured to block radiation from the radiation source, the shield defining an illumination area of ​​the projected image using a pattern of the reticle and radiation from the radiation source, the illumination area defined by the shield being variable; and (e) removing thermal energy from at least one of the shield and the reticle using a heat removal device of the shield, wherein step (e) includes directing a cooling fluid from the heat removal device toward the reticle.

45. The method of claim 44, wherein: The shield includes a plurality of components configured to define the illumination area, at least one of the plurality of components being movable relative to the rest of the plurality of components such that the illumination area is variable.

46. ​​A method of operating a lithography system, the method comprising the steps of: (a) supporting a working part using a support structure of the lithography system; (b) projecting an image onto the workpiece using radiation from a radiation source of the lithography system; (c) placing a light shield between the radiation source and the working part; (d) disposing a shield adjacent to the reticle, the shield configured to block radiation from the radiation source, the shield defining an illumination area of ​​the projected image using a pattern of the reticle and radiation from the radiation source, the shield comprising a plurality of components configured to define the illumination area; and (e) removing thermal energy from at least one of the shield and the reticle using a heat removal device of the shield, wherein step (e) comprises directing a cooling fluid from the heat removal device toward the reticle; wherein at least one of the plurality of components is disposed above the reticle along a z-axis of the lithography system, and wherein at least another one of the plurality of components is disposed below the reticle along the z-axis of the lithography system.

47. The method of claim 46, wherein: (i) the plurality of components disposed above the photomask along the z-axis of the lithography system include a pair of components configured to move relative to each other along an x-axis of the lithography system, and (ii) the plurality of components disposed below the photomask along the z-axis of the lithography system include a pair of components configured to move relative to each other along a y-axis of the lithography system.

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