Transient model of high-frequency switching rectifier absorption circuit and circuit parameter testing method

Abstract

The present invention discloses a transient model of a frequency switch rectifier absorption circuit, including a signal voltage V in The signal voltage is connected in series with resistor R1, inductor L and capacitor Ce, capacitor C e A rectifier diode D1 / D2 is connected in parallel to the rectifier diode D1 / D2, and a capacitor C2 and a resistor R2 are connected in parallel to the rectifier diode D1 / D2; a parameter test method for a high-frequency switch rectifier absorption circuit includes the following steps: S1, short-circuiting R2 and opening C2, and testing the maximum voltage V of the reverse voltage of the rectifier D1 / D2 off and oscillation frequency f0. The calculation formula of oscillation frequency f0 is #imgabs0#S2. Short-circuit R2 and gradually increase capacitance C2 to make oscillation frequency f=f0 / 2; S3. Calculate parasitic capacitance Ce and parasitic inductance L. The calculation formula of parasitic capacitance Ce is Ce=C2 / 3, and the calculation formula of parasitic inductance L is L=1 / C e (2πf o ) 2 ; S4. Calculate the absorption resistor R2 and the absorption capacitor C2. The calculation formula of the absorption resistor R2 is #imgabs1# and the calculation formula of the absorption capacitor C2 is #imgabs2#. The advantage of the present invention is that the optimal absorption circuit parameters can be obtained at one time.

Description

Technical Field

[0001] The invention relates to the technical field of rectifier circuits, and in particular to a transient model of a high-frequency switch rectifier absorption circuit and a circuit parameter testing method. Background Art

[0002] In the absence of a transient model and test for a high-frequency switching rectifier absorption circuit, engineers rely on experience and feelings to determine absorption circuit parameters through repeated trial and error, which is like a blind man touching an elephant, both time-consuming and laborious, and there is a high possibility that it is not optimal. Instead of determining absorption circuit parameters through design. Summary of the invention

[0003] The technical problem to be solved by the present invention is, in view of the above problems, to provide a method for obtaining the original parasitic parameters through a simple testing method, and then determining the absorption circuit parameters through calculation, so as to obtain the optimal absorption circuit parameters at one time, thereby getting rid of the transient model and circuit parameter testing method of the high-frequency switching rectifier absorption circuit which is both time-consuming and laborious and requires repeated trial and error.

[0004] In order to solve the above technical problems, the technical solution provided by the present invention is as follows: a transient model of a high-frequency switch rectifier absorption circuit includes a signal voltage V in The signal voltage is connected in series with a resistor R1, an inductor L and a capacitor Ce, and the capacitor C e A rectifier diode D1 / D2 is connected in parallel to the rectifier diode D1 / D2 , and a capacitor C2 and a resistor R2 are connected in parallel to the rectifier diode D1 / D2 .

[0005] The method for testing parameters of a high-frequency switch rectifier absorption circuit comprises the following steps:

[0006] S1, short-circuit R2, open C2, and test the maximum reverse voltage V of rectifier D1 / D2 off And the oscillation frequency f0, the calculation formula of the oscillation frequency f0 is

[0007] S2, short-circuit R2 and gradually increase the capacitance C2 so that the oscillation frequency f = f0 / 2;

[0008] S3. Calculate the parasitic capacitance Ce and parasitic inductance L. The calculation formula of the parasitic capacitance Ce is Ce=C2 / 3, and the calculation formula of the parasitic inductance L is L=1 / C e (2πf o ) 2 ;

[0009] S4, calculate the absorption resistance R2 and the absorption capacitance C2, the calculation formula of the absorption resistance R2 is: The calculation formula of the absorption capacitor C2 is: Where V ais the expected voltage amplitude.

[0010] The advantages of the present invention over the prior art are as follows: the transient model of the high-frequency switch rectifier absorption circuit and the circuit parameter testing method establish a transient model of the high-frequency switch rectifier absorption circuit in conjunction with its circuit parameter testing method, obtain the original parasitic parameters through a simple testing method, determine the absorption circuit parameters through calculation, and obtain the optimal absorption circuit parameters at one time, thereby getting rid of the time-consuming and laborious trial and error; and calculate the absorption circuit parameters through the transfer function stability principle, thereby obtaining the optimized absorption circuit.

[0011] Furthermore, the V a The value is V in 1.1-1.3 times of that. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is the circuit diagram of the transient model of the high-frequency switching rectifier absorption circuit. DETAILED DESCRIPTION

[0013] In order to better explain the present invention and facilitate understanding, the present invention is described in detail through specific implementation methods.

[0014] Example

[0015] Establish a transient model of the high-frequency switching rectifier absorption circuit, including the signal voltage V in The signal voltage is connected in series with a resistor R1, an inductor L and a capacitor Ce, and the capacitor C e A rectifier diode D1 / D2 is connected in parallel to the rectifier diode D1 / D2 , and a capacitor C2 and a resistor R2 are connected in parallel to the rectifier diode D1 / D2 .

[0016] The optimal parameters are tested and calculated by the high-frequency switch rectifier absorption circuit parameter test method, which specifically includes the following steps:

[0017] S1, short-circuit R2, open C2, and test the maximum reverse voltage V of rectifier D1 / D2 off And the oscillation frequency f0, the calculation formula of the oscillation frequency f0 is

[0018] S2, short-circuit R2 and gradually increase the capacitance C2 so that the oscillation frequency f = f0 / 2;

[0019] S3. Calculate the parasitic capacitance Ce and parasitic inductance L. The calculation formula of the parasitic capacitance Ce is Ce=C2 / 3, and the calculation formula of the parasitic inductance L is L=1 / C e (2πf o ) 2 ;

[0020] S4, calculate the absorption resistance R2 and the absorption capacitance C2, the calculation formula of the absorption resistance R2 is: The calculation formula of the absorption capacitor C2 is: Where V a is the expected voltage complex amplitude, the V a The value is V in 1.1-1.3 times of that.

[0021] The above embodiments are only used to illustrate rather than limit the technical solutions of the present invention. Although the present invention is described in detail with reference to the above embodiments, those skilled in the art should understand that the present invention can still be modified or replaced by equivalents. Any modification or partial replacement that does not depart from the spirit and scope of the present invention should be included in the scope of the claims of the present invention.

Claims

1. High-frequency switching rectifier absorption circuit transient model, including signal voltage V in , characterized in that: The signal voltage is connected in series with a resistor R1, an inductor L and a capacitor C e , the capacitor C e A rectifier diode D1 / D2 is connected in parallel to the rectifier diode D1 / D2, and a capacitor C2 and a resistor R2 are connected in parallel to the rectifier diode D1 / D2; The method for testing parameters of a high-frequency switch rectifier absorption circuit comprises the following steps: S1, short-circuit R2, open C2, and test the maximum reverse voltage V of the rectifier diode D1 / D2 off And the oscillation frequency f0, the calculation formula of the oscillation frequency f0 is S2, short-circuit R2 and gradually increase the capacitance C e , so that the oscillation frequency f = f0 / 2; S3. Calculate the parasitic capacitance C e and parasitic inductance L, the parasitic capacitance C e The calculation formula is C e =C2 / 3, the calculation formula of the parasitic inductance L is L=1 / C e (2πf0) 2 ; S4, calculate the absorption resistance R2 and the absorption capacitance C2, the absorption resistance R2 的 The calculation formula is The calculation formula of the absorption capacitor C2 is: Where V a is the expected voltage amplitude.

2. The transient model of the high-frequency switching rectifier absorption circuit according to claim 1 is characterized in that: The V a The value is V in 1.1-1.3 times of that.

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