Wafer positioning pedestals for semiconductor processing

Abstract

An assembly is used in a processing chamber for depositing films on wafers and includes a susceptor extending from a central axis. An actuator is configured to control movement of the susceptor. A central axis extends between the actuator and the susceptor, the central axis configured to move the susceptor along a central axis. A lift pad is configured to rest on the susceptor and has a pad top surface configured to support a wafer placed thereon. A pad shaft extends between the actuator and the lift pad and controls movement of the lift pad. The pad shaft is positioned within the central axis and is configured to separate the lift pad from the susceptor top surface to handle rotational displacement when the susceptor is in an upward position. The pad shaft is configured to rotate relative to the susceptor top surface between a first and a second angular orientation.

Description

[0001] This application is a divisional application of the invention patent application with application number 201780076683.0, application date September 5, 2017, and invention name “Wafer positioning base for semiconductor processing”. Technical Field

[0002] The provided embodiments relate to semiconductor substrate processing methods and equipment tools, and more particularly, to wafer positioning pedestals for processing wafers in different wafer-to-pedestal orientations. Background Art

[0003] Improved film uniformity is important in plasma enhanced chemical vapor deposition (PECVD) and plasma atomic layer deposition (ALD) technologies. The chamber systems that implement PECVD and ALD are associated with hardware features that lead to non-uniform film deposition. For example, hardware features can be associated with chamber asymmetry and susceptor asymmetry. In addition, many processes experience azimuthal non-uniformity of various origins. As customers increasingly tend to position the die closer to the wafer edge, the numerical contribution of this azimuthal non-uniformity to the overall non-uniformity increases. Despite best efforts to minimize damage and / or non-uniform deposition distribution, conventional PECVD and plasma ALD schemes still need improvement.

[0004] In particular, multi-station modules that perform PECVD and ALD are characterized by large, open reactors that can contribute to azimuthal non-uniformities (e.g., NU in the θ direction). For example, some non-uniformities can cause characteristic film thicknesses to tilt toward the spindle transfer mechanism in the center of the reactor. Non-uniformities can also exist in single-station modules due to non-uniform physical chamber geometry, including those caused by assembly and component manufacturing tolerances.

[0005] Traditionally, deposition non-uniformity has been compensated by physically tilting the showerhead so that it is intentionally oriented non-parallel to the susceptor. While not a perfect solution, it has historically been effective. However, the effectiveness of this approach is becoming increasingly limited, especially as die sizes decrease and the edge of the wafer is increasingly used for the die.

[0006] Processing the wafer in multiple orientations without rotating the hardware features has proven effective in filtering out azimuthal non-uniformity. The most basic current approach in the prior art involves partially processing the wafer, removing it from the process chamber, rotating it in a separate wafer handler, and then reinserting it for further processing in the new orientation. The primary advantage of this approach is that there is no hardware rotation within the chamber. However, this prior art solution has disadvantages in terms of throughput, contamination, and significant additional hardware.

[0007] Another solution in the prior art is to rotate the entire susceptor during processing. However, this solution has the disadvantage of rotating the susceptor-related non-uniformities along with the wafer. In this case, the susceptor can have non-uniform characteristics that are not canceled out and can appear on the wafer during processing. In addition, edge effects of the wafer in the pocket are another type of non-uniformity that rotates directly with the wafer when the entire susceptor is rotated during processing. That is, susceptor rotation (for example, in ALD oxide deposition) does not significantly improve non-uniformity. Moreover, in addition to limited performance, rotating the entire susceptor also comes at the expense of delivering RF power through the rotating susceptor. This requires expensive circuitry for impedance matching via slip rings to deliver sufficient RF power to the plasma. Rotating the entire susceptor also complicates the delivery of fluids and gases (for example, for cooling). In addition, the heating system present in the susceptor also needs to rotate, which increases cost and complexity.

[0008] It is against this background that the present disclosure arises. Summary of the Invention

[0009] The present embodiments are directed to providing improved film uniformity during PECVD and ALD processes in single-station and multi-station systems.The disclosed embodiments provide for rotating the wafer without rotating the susceptor, which advantageously filters out both chamber asymmetry and susceptor asymmetry.

[0010] Embodiments of the present disclosure include an assembly for use in a processing chamber for depositing films on wafers. The assembly includes a susceptor having a susceptor top surface extending from a central axis of the susceptor to a susceptor diameter. The assembly includes an actuator configured to control the movement of the susceptor. The assembly includes a central shaft extending between the actuator and the susceptor, wherein the central shaft is configured to move the susceptor along the central axis. The assembly includes a lift pad having a pad top surface extending from the central axis to the pad diameter and a pad bottom surface configured to rest on the susceptor top surface. The pad top surface is configured to support a wafer when placed thereon. The assembly includes a pad shaft extending between the actuator and the lift pad, wherein the actuator is configured to control the movement of the lift pad. The pad shaft is configured to separate the lift pad from the susceptor, and wherein the pad shaft is positioned within the central shaft. The lift pad is configured to move upward along the central axis relative to the susceptor top surface when the susceptor is in an upward position, separating the lift pad from the susceptor top surface to process rotational displacement. The lift pad is configured to rotate relative to the base top surface when separated from the base between at least a first angular orientation and a second angular orientation.

[0011] Other embodiments of the present disclosure include an assembly for use in a processing chamber for depositing films on wafers. The assembly includes a susceptor having a susceptor top surface extending from a central axis of the susceptor to a susceptor diameter, wherein the susceptor top surface is configured to support a wafer when placed thereon. The assembly includes a recess centered on the susceptor top surface, wherein the recess extends from the central axis to a recess diameter, has a recess height, and has a recess bottom surface. The assembly includes an actuator configured to control movement of the susceptor. The assembly includes a central shaft extending between the actuator and the susceptor, wherein the central shaft is configured to move the susceptor along the central axis. The assembly includes a lift pad having a pad top surface extending from the central axis to a pad diameter, wherein the lift pad is configured to rest on the recess bottom surface when positioned within the recess. The assembly includes a pad shaft extending between the actuator and the lift pad, wherein the actuator is configured to control movement of the lift pad. The pad shaft is configured to separate the lift pad from the base, wherein the pad shaft is positioned within the central axis. The lift pad is configured to move upwardly relative to the base top surface along the central axis when the base is in an upward position, such that the lift pad separates from the base top surface during rotational displacement. The lift pad is configured to rotate relative to the base top surface when separated from the base between at least a first angular orientation and a second angular orientation.

[0012] In another embodiment, a method for operating a processing chamber for depositing films on wafers is disclosed. The method includes placing the wafer on an assembly comprising a susceptor and a lift pad. The susceptor includes a susceptor top surface extending from a central axis to a susceptor diameter, wherein the lift pad is configured to rest on the susceptor. The method includes controlling the susceptor to move upward and downward along the central axis. The method includes moving the susceptor to a processing position. The method includes performing a first number of processing cycles, wherein the lift pad is in a first angular orientation relative to the susceptor top surface. The method includes moving the susceptor to an upward position. The method includes, when the susceptor is in the upward position, raising the lift pad upward relative to the susceptor top surface along the central axis, rotating the lift pad away from the susceptor top surface, and separating the wafer disposed on the lift pad from the susceptor. The method includes rotating the lift pad relative to the susceptor top surface to a second angular orientation relative to the susceptor top surface when separated from the susceptor top surface. The method includes lowering the lift pad to rest on the susceptor. The method includes moving the base to the processing position. The method includes performing a second number of processing cycles with the lift pad in the second angular orientation.

[0013] These and other advantages will be appreciated by those skilled in the art after reading the entire specification and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The embodiments are best understood by referring to the following description taken in conjunction with the accompanying drawings.

[0015] Figure 1 A substrate processing system is shown for processing wafers, for example, to form films thereon.

[0016] Figure 2 A top view of a multi-station processing tool is shown according to one embodiment, wherein four processing stations are provided.

[0017] Figure 3 A schematic diagram of an embodiment of a multi-station processing tool with inbound load locks and outbound load locks is shown according to an embodiment.

[0018] Figure 4 A substrate processing system including a lift pad and pedestal configuration is shown, wherein the lift pad is sized to approximately match a wafer, according to an embodiment of the present disclosure.

[0019] Figure 5A According to an embodiment of the present disclosure Figure 4 Cross-sectional view of a substrate processing system.

[0020] Figure 5B According to an embodiment of the present disclosure Figure 4 A cross-sectional view of a substrate handling system showing a lift pad and pedestal configuration wherein the lift pad is sized to approximately match a wafer and wherein the pedestal and lift pad are at a level that enables lift pin extensions to be used for wafer transport.

[0021] Figure 5C is a diagram of the interface between a lift pad and a base including a pad gap setting a minimum contact area (MCA) according to an embodiment of the present disclosure.

[0022] Figure 6 A substrate processing system including a lift pad and pedestal configuration is shown, wherein the lift pad is smaller than the wafer, according to an embodiment of the present disclosure.

[0023] Figure 7A According to an embodiment of the present disclosure Figure 6 A perspective view of a substrate processing system including a lift pad and susceptor configuration, wherein the lift pad is smaller than the wafer.

[0024] Figure 7B According to an embodiment of the present disclosure Figure 6 A cross-sectional view of a substrate processing system including a lift pad and susceptor configuration, wherein the lift pad is smaller than the wafer.

[0025] Figure 7C According to an embodiment of the present disclosure Figure 6 A cross-sectional view of a substrate processing system including a lift pad and susceptor configuration, wherein the lift pad is smaller than the wafer.

[0026] Figure 7D According to an embodiment of the present disclosure Figure 6 A cross-sectional view of a lift pad to susceptor interface in a substrate processing system including a lift pad and susceptor configuration, wherein the lift pad is smaller than the wafer.

[0027] Figure 7E According to an embodiment of the present disclosure Figure 6 A perspective view of a top surface of a lift pad in a substrate processing system including a lift pad and a pedestal configuration.

[0028] Figure 7F According to an embodiment of the present disclosure Figure 6 A perspective view of a bottom surface of a lift pad in a substrate processing system including a lift pad and a pedestal configuration.

[0029] Figure 8 is a flow chart illustrating a method for operating a processing chamber configured for depositing films on a wafer according to an embodiment of the present disclosure, wherein the method enables rotation of the wafer within the processing chamber during processing without rotating the susceptor, which advantageously filters out both chamber asymmetry and susceptor asymmetry.

[0030] Figure 9A and 9B is a diagram illustrating a motion sequence for a lift pad and susceptor configuration according to an embodiment of the present disclosure, wherein the lift pad is sized to approximately match the wafer and includes rotating the wafer within the processing chamber during processing without rotating the susceptor, which advantageously filters out both chamber asymmetry and susceptor asymmetry.

[0031] Figure 9C is a diagram illustrating the orientation of a lift pad relative to a susceptor in a lift pad and susceptor configuration during a first processing sequence, a rotation sequence, and a second processing sequence according to an embodiment of the present disclosure, wherein the lift pad is sized approximately to the size of a wafer.

[0032] Figure 10A and 10B is a diagram illustrating a motion sequence of a lift pad and susceptor configuration according to an embodiment of the present disclosure, wherein the lift pad is smaller than a wafer, wherein the lift pad is configured to allow transport of the wafer (e.g., via an end effector arm), and includes rotating the wafer within a processing chamber during processing without rotating the susceptor, which advantageously filters out both chamber asymmetry and susceptor asymmetry.

[0033] Figure 10C is a diagram illustrating a motion sequence for a lift pad and susceptor configuration according to an embodiment of the present disclosure and including a lift pin assembly, wherein the lift pad is smaller than the wafer and includes rotating the wafer within the processing chamber during processing without rotating the susceptor, which advantageously filters out both chamber asymmetry and susceptor asymmetry.

[0034] Figure 10D is a diagram illustrating the orientation of a lift pad relative to a susceptor in a lift pad and susceptor configuration during a first processing sequence, a rotation sequence, and a second processing sequence, wherein the lift pad is smaller than the wafer, according to an embodiment of the present disclosure.

[0035] Figure 11 A control module for controlling the above system is shown. DETAILED DESCRIPTION

[0036] Although the following detailed description contains many specific details for the purpose of illustration, it will be appreciated by those skilled in the art that many variations and modifications to the following details are within the scope of the present disclosure. Accordingly, the various aspects of the present disclosure described below are set forth without losing the generality of, and without imposing limitations on, the claims that follow this specification.

[0037] In general, various embodiments of the present disclosure describe systems and methods for providing improved film uniformity during wafer processing (e.g., PECVD and ALD processing) in single-station and multi-station systems. In particular, embodiments of the present disclosure provide for rotating the wafer without rotating the susceptor to filter out both chamber asymmetry and susceptor asymmetry. In this manner, azimuthal non-uniformity due to chamber asymmetry and susceptor asymmetry is minimized to achieve film uniformity across the wafer during processing (e.g., PECVD, ALD, etc.).

[0038] With the above general understanding of various embodiments, example details of the embodiments will now be described with reference to a variety of drawings. Like-numbered elements and / or components in one or more drawings are intended to generally have the same configuration and / or function. In addition, the drawings may not be drawn to scale, but are intended to illustrate and emphasize novel concepts. It is apparent that embodiments of the present invention can be practiced without some or all of these specific details. In other cases, well-known processing operations are not described in detail to avoid unnecessarily obscuring the understanding of the embodiments of the present invention.

[0039] Figure 1A reactor system is shown that can be used to deposit films on substrates, such as those formed in an atomic layer deposition (ALD) process. These reactors can use two or more heaters, and in this exemplary reactor a common terminal configuration can be used to control the temperature to achieve uniformity or customized settings. More specifically, Figure 1 A substrate processing system 100 is shown for processing a wafer 101. The system includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. A central column is configured to support a pedestal 140, which in one embodiment is a powered electrode. The pedestal 140 is electrically coupled to a power supply 104 via a matching network 106. The power supply is controlled by a control module 110 (e.g., a controller). The control module 110 is configured to operate the substrate processing system 100 by executing process inputs and control devices 108. The process inputs and control devices 108 may include process recipes, such as power levels, timing parameters, process gases, mechanical movement of the wafer 101, etc., to deposit or form a film on the wafer 101.

[0040] The center column also includes lift pins (not shown), each of which is actuated by a corresponding lift pin actuation ring 120, which is controlled by a lift pin control device 122. The lift pins are used to lift the wafer 101 from the susceptor 140 to enable the end effector to pick up the wafer and to lower the wafer 101 after the end effector has placed the wafer 101. The substrate processing system 100 also includes a gas supply manifold 112, which is connected to a process gas 114, such as a gas chemical source from a facility. Depending on the process being performed, the control module 110 controls the delivery of the process gas 114 via the gas supply manifold 112. The selected gas is then flowed into the showerhead 150 and distributed in the spatial volume defined between the face of the showerhead 150 facing the wafer 101 and the wafer 101 resting on the susceptor 140. In the ALD process, the gas can be a reactant selected to absorb or react with the absorbed reactant.

[0041] In addition, the gases may be pre-mixed or not. Appropriate valves and mass flow control mechanisms may be employed to ensure the correct gas is delivered during the deposition and plasma treatment phases of the process. The process gas exits the chamber through an outlet. A vacuum pump (e.g., a single or two-stage mechanical dry pump and / or a turbomolecular pump) draws the process gas out and maintains an appropriate low pressure within the reactor through a closed-loop controlled flow restriction device (e.g., a throttle valve or a swing valve).

[0042] Also shown is a carrier ring 200 surrounding an outer area of ​​the susceptor 140. The carrier ring 200 is configured to be positioned above a carrier ring support area that is a step down from the wafer support area in the center of the susceptor. The carrier ring includes an outer edge side of its disk structure, e.g., an outer radius, and a wafer edge side of its disk structure, e.g., an inner radius, which is closest to where the wafer 101 is located. The wafer edge side of the carrier ring includes a plurality of contact support structures that are configured to lift the wafer 101 when the carrier ring 200 is lifted by the support forks 180. Thus, the carrier ring 200 is lifted along with the wafer 101 and can be rotated to another station, e.g., in a multi-station system. In other embodiments, the chamber is a single-station chamber.

[0043] Figure 2 A top view of a multi-station processing tool is shown, in which four processing stations are provided. This top view is of the lower chamber portion 102b (e.g., the upper chamber portion 102a is removed for illustration), with the four stations accessed by spider forks 226. Each spider fork or fork includes first and second arms, each positioned around a portion of each side of the base 140. In this view, the spider forks 226 are drawn in dashed lines to indicate that they are located below the carrier ring 200. The spider forks 226, using an engagement and rotation mechanism, are configured to simultaneously raise and elevate the carrier ring 200 from the station (i.e., from the lower surface of the carrier ring 200), and then rotate at least one or more stations to the next position before lowering the carrier ring 200 (wherein at least one of the carrier rings supports a wafer 101) so that further plasma processing, treatment, and / or film deposition can be performed on the corresponding wafer 101.

[0044] Figure 3 A schematic diagram of an embodiment of a multi-station processing tool 300 is shown having an inbound load lock 302 and an outbound load lock 304. A robot 306 is configured to move substrates from a cassette loaded via a wafer boat 308 into the inbound load lock 302 via an atmospheric port 310 at atmospheric pressure. The inbound load lock 302 is coupled to a vacuum source (not shown) so that the inbound load lock 302 can be evacuated when the atmospheric port 310 is closed. The inbound load lock 302 also includes a chamber transfer port 316 that interfaces with a processing chamber. Thus, when the chamber transfer port 316 is open, another robot (not shown) can move a substrate from the inbound load lock 302 to the pedestal 140 of the first processing station for processing.

[0045] The depicted processing chamber includes four processing stations, Figure 3 The illustrated embodiment is numbered 1 through 4. In some embodiments, the processing chamber can be configured to maintain a low pressure environment so that substrates can be transferred between processing stations using the carry ring 200 without experiencing vacuum break and / or air exposure. Figure 3Each of the process stations depicted in FIG. 1 includes a process station substrate support (shown at 318 in station 1) and a process gas delivery line inlet.

[0046] Figure 3 Also depicted is a spider fork 226 for transporting substrates within the processing chamber. Spider fork 226 rotates and is capable of transporting wafers from one station to another. This transport occurs by enabling spider fork 226 to lift carrier ring 200 from its outer lower surface, thereby lifting the wafer, and rotating the wafer and carrier ring together to the next station. In one configuration, spider fork 226 is made of a ceramic material to withstand the high levels of heat during processing.

[0047] Figure 4 A substrate processing system including a lift pad and pedestal arrangement 400 is shown, wherein the lift pad 430 is sized to substantially match a wafer (not shown) disposed thereon. In some embodiments, the lift pad 430 is sized to substantially enable integration with a carrier ring assembly. The lift pad and pedestal arrangement 400 may be configured to: Figure 1-3 , including implementation within multi-station and single-station processing tools.

[0048] The lift pad and base configuration 400 includes a lift pad 430 controlled by a lift pad control 455 and a base 140' controlled by a base control 450. A central shaft 510' is coupled to the base 140', and a pad shaft 560 is coupled to the lift pad 430. The base control 450 controls the movement of the central shaft 510' to induce movement in the base 140'. For example, the base control 450 controls the movement of the base 140' (e.g., up and down along the central axis) during pre-processing, processing, and post-processing sequences. The lift pad control 455 controls the movement of the lift pad shaft 560 to induce movement in the lift pad 430. For example, the lift pad control 455 controls the movement of the lift pad 430 (e.g., up and down along the central axis 471 and rotation about the central axis 471) during pre-processing, processing, and post-processing sequences. In particular, the lift pad and susceptor configuration 400 provides for wafer rotation with significantly reduced hardware rotational features compared to rotating the entire susceptor 140'. That is, because the susceptor 140' and / or chamber (not shown) remain stationary relative to the lift pad 430 as the wafer rotates, susceptor and chamber-based asymmetries are filtered out, thereby significantly reducing the hardware susceptor and chamber features exhibited on the wafer during processing. In other words, non-uniformities introduced by susceptor features can be symmetrically distributed across the wafer during wafer processing by using the lift pad for wafer rotation without rotating the susceptor.

[0049] The lift pad and pedestal arrangement 400 includes a plurality of heating elements 470 for directly heating the pedestal 140' (e.g., by conduction) and indirectly heating the lift pad 430 when the lift pad 430 is positioned on the pedestal 140'. Additionally, in some process modules, the lift pad and pedestal arrangement 400 optionally includes a plurality of cooling elements 480 for cooling the pedestal 140'.

[0050] The lift pad and pedestal arrangement 400 includes a central column, which is shown as including a coaxial lift pin assembly 415 having a plurality of lift pins, which are controlled by the lift pin control device 122, as previously described. For example, the lift pins are used to lift a wafer from the lift pad 430 and pedestal 140' to enable an end effector to pick up the wafer and to lower the wafer after placement by the end effector during a wafer transfer sequence.

[0051] The lift pad and base arrangement 400 includes a bellows 420. The bellows 420 is individually coupled to the lift pin assembly 415, the base, or the lift pad, and is configured to facilitate movement of the lift pins, the base, or the lift pad. Additionally, the lift pad and base arrangement 400 includes a rotary motor in a belt-and-pulley arrangement 427. Furthermore, an iron seal 425 facilitates rotation of the lift pad 430 in a vacuum environment.

[0052] In one embodiment, the wafer-sized lift pad 430 is electrostatic chuck (ESC) compatible. The ESC 570 is configured to include electrodes biased to a high voltage to induce an electrostatic holding force to hold the wafer in place when the ESC 570 is active. Additionally, in one embodiment, the lift pad and pedestal arrangement 400 includes a flexible shaft portion 435 that promotes uniform clearance between the lift pad 430 and the pedestal 140', particularly when the lift pad 430 is moved to rest on the pedestal 140'.

[0053] like Figure 4 As shown, in one embodiment, ball screw 437 (e.g., left-hand side) is configured to drive lift pins against base 140' during a sequence of processing. For example, ball screw 437 can be engaged during a wafer transfer sequence to extend lift pins for wafer transfer when base 140' is moved to or near the bottom-most position. Ball screw 443 (e.g., right-hand side) is used to move the base in the Z direction along the central axis. For example, ball screw 443 is configured to drive base 140' in the Z direction along the central axis using Z motor 445. In addition, short-stroke coupling mechanism 440 is shown.

[0054] Figure 5A According to an embodiment of the present disclosure Figure 4 In particular, Figure 5AA lift pad and pedestal configuration 400 is shown, wherein the lift pad 430 is sized to approximately mate with a wafer (not shown).

[0055] For purposes of illustration only, the base 140' is formed into three sections to accommodate the plurality of heating elements 470 and the plurality of cooling elements 480 during manufacturing. It should be understood that the base 140' is considered one element and may be formed using any suitable manufacturing process.

[0056] like Figure 5A As shown, the pedestal 140' and lift pad 430 are at a level that enables the lift pins 557 to be extended for wafer transfer. Each lift pin 557 is coupled to a corresponding lift pin support 555 for movement, wherein the movement of the lift pin support 555 is controlled by the lift pin control device 122. In one embodiment, the pedestal 140' is in its lowest position along the Z direction for travel along the central axis 471.

[0057] As previously described, the base control 450 controls the movement of the central shaft 510'. Because the base 140' is coupled to the central shaft 510', movement in the central shaft 510' is transferred to the base 140'. Additionally, as previously described, the lift pad control 455 controls the movement of the pad shaft 560. Because the lift pad 430 is coupled to the pad shaft 560, movement in the pad shaft 560 is transferred to the lift pad 430.

[0058] Figure 5B According to an embodiment of the present disclosure Figure 4 A cross-sectional view of a substrate processing system including the previously described Figure 4 and 5A Component 500B of the lift pad and susceptor configuration 400 is shown in FIG5B. The lift pad 430 is sized to approximately match a wafer (not shown). In yet another embodiment, the diameter of the lift pad 430 is sized to fit within a carrier ring (not shown). The lift pad and susceptor configuration 500A provides improved film uniformity during deposition processes (e.g., PECVD, ALD, etc.) in single-station and multi-station systems by rotating the wafer using the lift pad without rotating the susceptor to filter out azimuthal non-uniformities due to chamber asymmetry and susceptor asymmetry. In particular, the rotating lift pad 430 is much thinner than the entire susceptor 140′, and thus the rotational features of the lift pad 430 are much smaller than the rotational features of the susceptor 140′ (asymmetric hardware contribution to non-uniformity), which includes the heating element 470 and the cooling element 480. That is, non-uniformities introduced by the susceptor features can be symmetrically distributed across the wafer during wafer processing by rotating the wafer using the lift pad without rotating the susceptor.

[0059] In assembly 500B, base 140' includes a base top surface 533 that extends from the central axis 471 of base 140'. Top surface 533 may include one or more recesses to provide an interface between base 140' and lift pad 430, such as a central recess about central axis 471 and a recess forming outer rim 509 configured to facilitate coupling between pad shaft 560 and lift pad 430. While base 140' may be described as having a generally circular shape when viewed from above and extending to the base diameter, the footprint of base 140' may vary from a true circle to accommodate various features, such as accommodating load ring support and end effector access.

[0060] As shown, base 140' is connected to actuator 515, which is configured to control the movement of base 140'. Specifically, base control device 450 is coupled to actuator 515 to control the movement of base 140'. That is, central shaft 510' is coupled to actuator 515 and base 140' such that central shaft 510' extends between actuator 515 and base 140'. Central shaft 510' is configured to move base 140' along central axis 471. In this way, movement of actuator 515 is converted into movement of central shaft 510', which in turn is converted into movement of base 140'.

[0061] Additionally, the base 140' is shown as having three sections 140a', 140b', and 140c' for illustrative purposes only. For example, the base 140' can be formed into three sections to accommodate forming multiple heating elements 470 and / or multiple cooling elements 480 during manufacturing. As previously mentioned, it should be understood that the base 140' is considered a single element and can be formed using any suitable manufacturing process.

[0062] In assembly 500B, lift pad 430 includes a pad top surface 575 extending from central axis 471. In one embodiment, pad top surface 575 extends to pad diameter 577. Lift pad 430 includes a pad bottom surface 543 configured to rest on pedestal top surface 533. Additionally, pad top surface 575 is configured to support a wafer when placed thereon.

[0063] Additionally, as previously described, the lift pad 430 is electrostatic chuck (ESC) compatible. For example, the ESC assembly 570 is disposed below the pad's top surface 575. The electrostatic chuck assembly 570 prevents wafer movement due to chamber flow disturbances and maximizes wafer contact with the chuck (i.e., the lift pad's top surface 575). The benefits of the roughly wafer-sized lift pad 430 combined with the full-wafer ESC result in minimal wafer backside deposition. Furthermore, the full-wafer ESC does not require declamping for twisting and / or rotation.

[0064] As shown, the lift pad 430 is connected to an actuator 515, which is configured to control the movement of the lift pad 430. A lift pad control device 455 is coupled to the actuator 515 to control the movement of the lift pad 430. Specifically, a pad shaft 560 is coupled to the actuator 515 and the base 140' such that the pad shaft 560 extends between the actuator 515 and the base 140'. The pad shaft 560 is disposed within a central shaft 510', which is coupled to the base 140'. Specifically, the pad shaft 560 is configured to move the base 140' along the central axis 471. Thus, movement of the actuator 515 is translated into movement of the pad shaft 560, which in turn is translated into movement of the lift pad 430. In one embodiment, the actuator 515 controls the movement of the lift pad 430 and the base 140'.

[0065] Specifically, the pad shaft 560 is configured to separate the lifting pad 430 from the base 140', as will be described below. Figures 9A-9C More fully described. For example, the lifting pad 430 is configured to move upward along the central axis 471 relative to the base top surface 533 when the base 140' is in the upward position, so that the lifting pad 430 is separated from the base top surface 533 to process the rotational displacement to rotate the lifting pad 430. In one embodiment, when the base 140' reaches the topmost upward position, the lifting pad 430 moves upward relative to the base top surface 533. In addition, when the lifting pad 430 is separated from the base top surface 533, the lifting pad 430 is configured to rotate relative to the base top surface 533 of the base 140' between at least a first angular orientation and a second angular orientation (e.g., between 0 degrees and 180 degrees). The pad shaft 560 is also configured to lower the lifting pad 430 to rest on the base 140'. In particular, the flexible coupler 435 ( Figure 5C ) is positioned within the pad shaft 560 and is configured to symmetrically position the lift pad 430 above the base 140'.

[0066] In one embodiment, to prepare for rotation of the lift pad 430, the lift pad 430 is moved upward relative to the pedestal 140'. That is, the lift pad 430 is configured to move upward relative to the pedestal top surface 533 along the central axis 471 when the pedestal 140' is in an upward position (e.g., a topmost upward position) during wafer processing, such that the lift pad 430 (see FIG. Figure 9B) is separated from the susceptor top surface 533 by a processing rotational displacement 940, and the wafer disposed on the lift pad 430 is also separated from the susceptor 140'. Specifically, when the lift pad 430 is separated from the susceptor 140', the lift pad 430 is configured to rotate relative to the susceptor top surface 533 between at least a first angular orientation and a second angular orientation relative to the susceptor top surface 533. This rotation reduces the impact of hardware features of the susceptor during processing and also reduces the impact of hardware features of the chamber during processing. Additionally, the focus ring (not shown) does not rotate with the wafer, thereby reducing its hardware features on the wafer during processing.

[0067] Assembly 500 includes a lift pin assembly comprising a plurality of lift pins 557. For illustrative purposes, according to one embodiment of the present disclosure, base 140' and lift pad 430 are positioned to allow the lift pins 557 to extend for wafer transfer. Specifically, the lift pins 557 extend from lift pad 430 through a plurality of base shafts 518 disposed in base 140' and through a plurality of lift pad shafts 519 disposed in lift pad 430, enabling an end effector arm (not shown) carrying a wafer (with or without a carrier ring) to be maneuvered into position for transferring the wafer to or receiving the wafer from the lift pins 557. Respective base shafts 518 and pad shafts 519 are aligned and configured to receive corresponding lift pins 557. As shown, one or more lift pin shafts and corresponding lift pins can be configured within the lift pin assembly to lift and place or remove a wafer during wafer transfer. As shown, each lift pin 557 is coupled to a corresponding lift pin support 555 for movement. The lift pin supports 555 are coupled to the lift pin actuators 550. Additionally, the lift pin control 122 controls movement of the lift pin actuators 550 to effect movement in the lift pins 557.

[0068] The lift pin support 555 can be of any shape (e.g., an annular washer, arms extending from an annular base, etc.) Specifically, during operation of the lift pin assembly, lift pins 557 are attached to the lift pin support 555 and are positioned to move within the lift pin shafts to raise the wafer above the lift pad top surface 575 and / or lower the wafer to rest on the dolly top surface 575 during wafer transport and processing.

[0069] Figure 5C FIG2 is a diagram of the interface between a lift pad 430 and a susceptor 140′ according to an embodiment of the present disclosure, which includes a minimum contact area (MCA) for pad gap setting to control and / or mechanically set the gap, particularly during a processing sequence. This results in uniform temperature and impedance control of the pad. Figure 5C The interface shown in Figure 5A and 5B An example of the interface between the lift pad and the base is shown in .

[0070] For deposition processes, it is advantageous for the gap between the lift pad 430 and the susceptor 140' to be uniform and small. For example, PECVD and ALD processes can exhibit non-uniform characteristics due to temperature and plasma impedance. Both factors are sensitive to the gap between the wafer and the susceptor. Minimizing the size of the gap and controlling the uniformity of the gap across the lift pad and susceptor configuration reduces characteristics caused by temperature and plasma impedance.

[0071] In particular, the small gap enables low-impedance coupling of radio frequency (RF) energy between lift pad 430 and pedestal 140'. Additionally, the small gap provides lower thermal resistance, thereby allowing heating and / or cooling to be easily conducted from pedestal 140' to lift pad 430. Furthermore, the uniform gap between lift pad 430 and pedestal 140' ensures uniform heat transfer and uniform RF coupling.

[0072] As shown, the base top surface 533 includes a plurality of pad supports 595 (e.g., pad gap setting MCAs) defined thereon, wherein the pad supports are configured to support the lift pad 430 at a pad support level above the base top surface 533. Figure 5C . As previously described, the pad supports 595 provide a uniform and small gap between the lift pad 430 and the pedestal 140', thereby ensuring uniform heat transfer and uniform RF coupling between the lift pad 430 and the pedestal 140'. More specifically, the bottom surface 543 of the lift pad 430 is configured to rest on the plurality of pad supports 595 of the pedestal 140'. For example, the pedestal 140' and the lift pad 430 can be configured in a processing position (e.g., when performing plasma processing, treatment, and / or film deposition), or in a pre-coating position, such that the lift pad 430 rests on the plurality of pad supports 595. Furthermore, the lift pad 430 is configured to move with the pedestal 140' when resting on the pad supports 595. The pad supports can be electrically conductive for DC, low frequency, and radio frequency transmission.

[0073] Figure 6 A substrate processing system including a lift pad and pedestal arrangement 600 is shown according to an embodiment of the present disclosure, wherein the lift pad 630 is smaller than the wafer (not shown). The lift pad and pedestal arrangement 600 may be used in Figure 1-3 In-system implementation including multi-station and single-station processing tools.

[0074] The lift pad and pedestal arrangement 600 includes a lift pad 630 controlled by a lift pad control 455, and a pedestal 140″ controlled by a pedestal control 450. As previously described, the pedestal control 450 controls movement of the pedestal 140″ along the central axis 471′, while the lift pad control 455 controls movement (e.g., upward, downward, and rotational) of the lift pad 630 about the central axis 471′. The lift pad and pedestal arrangement 600 provides for rotation of a wafer (not shown) via the lift pad 630, wherein hardware rotation features are significantly reduced when compared to processing tools with or without pedestal rotation.

[0075] Lift pad and pedestal configuration 600 includes a lift pad 630 that is smaller than the wafer footprint. When ESC is not selected, lift pad and pedestal configuration 600 may be suitable for some deposition processes. In this case, lift pad 630 is preferred because it allows the pedestal's minimum contact area (MCA), which supports the wafer, to not rotate with the wafer during processing. In this case, the wafer gap nominally does not rotate with the wafer, which reduces exposure to hardware asymmetries. Additionally, the smaller lift pad 630 provides the further benefit of requiring less mass to rotate, thereby placing less mechanical stress on the system.

[0076] The lift pad and pedestal configuration 600 includes a plurality of heating elements 470' and thermocouples 607 included in the pad shaft 560' of the lift pad 630 to match the temperature at the surface of the lift pad 630 to the surface of the pedestal 140". Cooling elements in the pedestal 140" may be included in some process modules.

[0077] In one embodiment, although not shown, the lift pad and pedestal arrangement 600 optionally includes a lift pin assembly having a plurality of lift pins that are controlled by the lift pin control device 122 for wafer transport, as previously described. The flange 605 is included in a coaxial lift pin assembly (not shown). In another embodiment, the lift pad 630 can be used to provide the lift pin functionality, thereby eliminating the need for a lift pin assembly, thereby providing cost and packaging advantages.

[0078] The lift pad and base arrangement 600 includes bellows 420', each bellows 420' individually coupled to an optional lift pin assembly, base 140", or lift pad 630 and configured for movement thereof. Additionally, the lift pad and base arrangement 600 also includes a rotary motor in a pulley arrangement (not shown) similar to Figure 4 The iron seal 425' facilitates the rotation of the lifting pad 630 in the vacuum environment.

[0079] Additionally, the Z motor 445' is configured to drive the base 630 in the Z direction along the central axis 471'. Additionally, a coupling mechanism drives a slide 603 attached to the base and the central shaft 510", and to a ball screw attached to the Z motor 445', all of which serve to facilitate movement of the base 140" along the central axis 471'.

[0080] Figure 7A According to an embodiment of the present disclosure Figure 6 In particular, Figure 7A The embodiment includes a lift pad and base configuration 600, wherein the lift pad 630 is smaller than the wafer (not shown). Figure 7A As shown in FIG, the pedestal 140″ and lift pad 630 are shown in positions and / or levels that enable wafer processing.

[0081] As previously described, the base control 450 controls the movement of the central shaft 510 ″. Because the base 140 ″ is coupled to the central shaft 510 ″, the movement of the central shaft 510 ″ is transferred to the base 140 ″. Additionally, as previously described, the lift pad control 455 controls the movement of the pad shaft 560 ′. Because the lift pad 630 is coupled to the pad shaft 560 ′, the movement in the pad shaft 560 ′ is transferred to the lift pad 630 .

[0082] The pedestal 140″ of the lift pad and pedestal arrangement 600 includes a pedestal top surface 720 extending from a central axis 471″ of the pedestal 140″. A plurality of wafer supports 760 are disposed on the top surface 720. Additionally, a raised rim 710 is disposed on an outer edge of the pedestal top surface 720, wherein the raised rim 710 is configured to block lateral movement of a wafer placed on the pedestal 140″.

[0083] Figure 7B According to an embodiment of the present disclosure Figure 6 A cross-sectional view of a substrate processing system including the previously described Figure 6 and 7AComponent 700B of the lift pad and pedestal configuration 600 described in . According to one embodiment of the present disclosure, the lift pad 630 is smaller in size than the wafer. For illustrative purposes only, the pedestal 140" and lift pad 630 are shown in positions and / or levels where wafer processing can occur. In single-station and multi-station systems, during deposition processes (e.g., PECVD, ALD, etc.), the lift pad and pedestal configuration component 700B provides improved film uniformity by rotating the wafer using the lift pad without rotating the pedestal in order to filter out azimuthal non-uniformities due to chamber asymmetry and pedestal asymmetry. In particular, the rotating lift pad 630 is much smaller and thinner than the entire pedestal 140", and thus the rotational features of the lift pad 630 are much smaller than the rotational features of the pedestal 620 containing the heater element 480' (an asymmetric hardware contributor to non-uniformity). That is, the non-uniformities introduced by the pedestal features can be symmetrically distributed across the wafer during wafer processing by rotating the wafer using the lift pad without rotating the pedestal.

[0084] In assembly 700B, the base 140" includes a base top surface 720 extending from the central axis 471' of the base 140". The base top surface 720 is configured to support a wafer when placed thereon. The top surface 720 may include one or more recesses to provide an interface between the base 140" and the lift pad 630, such as recess 705 configured to facilitate coupling between the pad shaft 510' and the lift pad 430, and recesses forming a raised rim 710. Although the base 140" may be described as having a generally circular shape when viewed from above and extending to the base diameter, the footprint of the base 140" may vary from circular to accommodate different features, such as carry ring support and end effector access, etc.

[0085] As shown, the base 140" is connected to the actuator 515', and the actuator 515' is configured to control the movement of the base 140". In particular, the base control device 450 is coupled to the actuator 515' to control the movement of the base 140". In particular, the central shaft 510" is coupled to the actuator 515' and the base 140", so that the central shaft 510" extends between the actuator 515' and the base 140". The central shaft 510" is configured to move the base 140" along the central axis 471'. In this way, the movement of the actuator 515' is converted into the movement of the central shaft 510", and the movement of the central shaft 510" is converted into the movement of the base 140".

[0086] In one embodiment, the susceptor top surface 720 includes a plurality of wafer supports (not shown) defined thereon, wherein the wafer supports are configured to support a wafer 590 at a wafer support level above the susceptor top surface 720. The wafer supports provide a uniform and small gap between the susceptor 140" and any wafer 590 disposed thereon.

[0087] The base 140″ includes a recess 705 centered on the base top surface 720 and extending from the central axis 471′, the recess 705 having a recess height, and the recess 705 having a recess bottom surface 706. That is, the recess 705 is located above a central portion of the base top surface 720. In one embodiment, the recess bottom surface 706 includes a plurality of pad supports defined thereon, wherein the pad supports (e.g., MCAs) are configured to support the lift pad 630 at a pad support level above the recess bottom surface 706. In another embodiment, the MCAs are disposed on the bottom surface of the lift pad 630, as shown in FIG. Figure 7F further described.

[0088] Additionally, the base 140" is shown as having two sections 140a" and 140b", which is for illustrative purposes only. For example, the base 140" can be formed into two sections to accommodate the formation of multiple heating elements 470 and / or multiple cooling elements (not shown) during manufacturing. As previously disclosed, it should be understood that the base 140" is considered to be one element and can be formed using any suitable manufacturing process.

[0089] In assembly 700B, lift pad 630 includes a pad top surface 775 that extends from central axis 471' to pad diameter 777. Lift pad 630 is configured to rest on recess bottom surface 706 when lift pad 630 is positioned within recess 705, wherein recess 705 is configured to receive lift pad 630. Specifically, when wafer 590 is positioned on a wafer support of pedestal 140", such as in a processing position (e.g., when plasma treatment, machining, and / or film deposition is being performed), lift pad top surface 775 is below wafer 590. That is, when lift pad bottom surface 632 is resting on a plurality of pad supports (e.g., MCA 745), lift pad top surface 775 is below the wafer support level. Furthermore, lift pad 630 is configured to move with pedestal 620 when resting on the pad supports.

[0090] As shown, the lift pad 630 is coupled to an actuator 515', which is configured to control the movement of the lift pad 630. For example, the lift pad control device 455 is coupled to the actuator 515' to control the movement of the lift pad 630. Specifically, a pad shaft 560' is coupled to the actuator 515' and the base 140' such that the pad shaft 560' extends between the actuator 515' and the base 140'. The pad shaft 560' is disposed within a central shaft 510' coupled to the base 140'. Specifically, the pad shaft 560' is configured to move the lift pad 630 along the central axis 471'. Thus, the movement of the actuator 515' is translated into the movement of the pad shaft 560', which in turn is translated into the movement of the lift pad 630. In one embodiment, the actuator 515' controls the movement of both the lift pad 630 and the base 140'.

[0091] Specifically, the pad shaft 560' is configured to separate the lift pad 630 from the base 140" to allow the lift pad to rotate, as will be described below with respect to FIG. Figures 10A-10D More fully described. For example, the lift pad 630 is configured to move upward along the central axis 471' relative to the base top surface 720 when the base 140" is in the upward position, so that the lift pad 630 is separated from the base top surface 720 to process the rotational displacement in order to rotate the lift pad 630. The pad shaft 560' is also configured to lower the lift pad 430 to rest on the base 140'. In one embodiment, in order to prepare for the lift pad rotation, the lift pad 630 is moved upward relative to the base 140". That is, the lift pad 630 is configured to move upward along the central axis 471" relative to the base top surface 720 when the base 140" is in the upward position, so that the lift pad 630 is separated from the base top surface 720 (see Figure 10B and 10C ) separation process rotational displacement 1040 and causes the wafer disposed on the lift pad 630 to separate from the pedestal 140". In one embodiment, the pedestal 140" is in a top-most upward position during the rotation of the lift pad 630. In particular, the lift pad 630 is configured to rotate relative to the pedestal top surface 720 between at least a first angular orientation and a second angular orientation (e.g., between 0 degrees and 180 degrees) when the lift pad 630 is separated from the pedestal 140". This rotation reduces the impact of hardware features of the pedestal during processing and also reduces the impact of chamber hardware features during processing.

[0092] In other embodiments, the lift pads 630 provide lift pin functionality to raise and lower the wafer during wafer transport and processing. Specifically, the lift pads 630 are configured to move upward relative to the central base top surface 720 when the base is in the bottom-most downward position, such that the lift pads 630 are separated from the central base top surface 621 by a sufficient displacement for the end effector arm to enter.

[0093] like Figure 7B As shown, the pedestal 140″ of the lift pad and pedestal arrangement 600 includes a raised rim 710 disposed on an outer edge of the pedestal top surface 720, wherein the raised rim 710 is configured to block lateral movement of a wafer placed on the pedestal 140″. In other words, the raised rim 710 is a step above the pedestal top surface 720 that is high enough to block movement of the wafer. For example, when the wafer rests on the pedestal top surface 720, the raised rim 710 forms a groove that blocks lateral movement of the wafer.

[0094] Figure 7C According to an embodiment of the present disclosure Figure 6 A cross-sectional view of a substrate processing system including a substrate processing system based on the previously described Figure 6 、 7A 7B , wherein the lift pad 630 is smaller than the wafer. The lift pad and pedestal arrangement 600 ′ includes the pedestal 140 ″′ and the lift pad 630. More specifically, Figure 7C The lift pad and base configuration of 600' is similar to Figure 7B The lifting pad and base configuration 600 and provides the same as previously described with respect to Figure 7B The benefits and advantages described above (e.g., improved film uniformity during deposition) can be achieved. That is, non-uniformities introduced by susceptor features can be symmetrically distributed across the wafer during wafer processing by rotating the wafer using the lift pads without rotating the susceptor. However, lift pad and susceptor configuration 600' also includes a lift pin assembly configured to transport a corresponding wafer (e.g., wafer 590).

[0095] The lift pin assembly of assembly 700C includes a plurality of lift pins 557'. For illustrative purposes, according to one embodiment of the present disclosure, the base 140' and the lift pad 630 are at a level that allows the lift pins 557' to be extended for wafer transfer. In particular, the lift pins 557' extend from a plurality of base shafts 518' that are displaced from the central axis 471' and disposed in the base 140' so that an end effector arm (not shown) carrying a wafer (with or without a carrier ring) can be maneuvered into a position for transferring a wafer to the lift pins 557' or for receiving a wafer from the lift pins 557'. The respective base shafts 518' are configured to receive the respective lift pins 557'. As shown, one or more base shafts 518' and the respective lift pins 557' can be configured within the lift pin assembly to lift and place or remove a wafer during wafer transfer. As shown, each lift pin 557' is coupled to a corresponding lift pin support 555' and is positioned to move within the susceptor shaft 518' to raise and / or lower the wafer above the susceptor top surface 720 during wafer transport and processing. The lift pin support 555' is configured to move relative to the susceptor top surface 720 parallel to the central axis 471'. Furthermore, the lift pin support 555' is coupled to the lift pin actuator 550'. Furthermore, the lift pin control device 122 described previously controls the movement of the lift pin actuator 550' to effect movement in the lift pins 557'. The lift pin support 555' can be of any shape (e.g., an annular washer, an arm extending from an annular base, etc.).

[0096] Figure 7D According to an embodiment of the present disclosure Figure 6 A cross-sectional view of a lift pad to susceptor interface in a substrate processing system comprising Figures 7A-7C The lift pad and susceptor configuration 600 or 600' is provided, wherein the lift pad is smaller than the wafer.

[0097] A high temperature bearing 755 is positioned within the pad shaft 560' and is configured to evenly position the lift pad 630 within the recess 705 of the base 140' or 140". To handle high temperatures, the wear surfaces are preferably made of a hard, chemically compatible material, such as sapphire. Bearing centering is insensitive to the relative thermal expansion of the bearing components, shaft, and base materials. In one embodiment, the tapered clamping surface of the sapphire bearing ring can be spring loaded using an assembly of load distributing washers, spring washers, and retaining rings of a material suitable for high temperature and corrosive operation. The bearing is clamped in its center position with minimal energy and remains centered with temperature changes. The sapphire contact ring prevents indentation of the softer base material.

[0098] In particular, the interface between the lift pad 630 and the base 140" / 140"' is shown, and includes a pad gap setting MCA to control and / or mechanically set the gap, particularly during a processing sequence. For example, Figure 7D Sapphire balls 740 and 745 (e.g., MCA) are shown riveted into lift pad 630. Specifically, balls 740 and 745 protrude slightly by a few millimeters above their respective surfaces on the ordering operating system at processing temperatures. The sapphire balls are used to contact the base 140" / 140"' with a minimum contact area to minimize heat transfer through contact with poor thermally conductive materials. In addition, the sapphire contact ring prevents indentation of the softer base material.

[0099] For example, Figure 7E is a device including MCA 740 according to an embodiment of the present disclosure Figure 7D , a perspective view of the top surface 631 of the lift pad 630 is shown in FIG. In one embodiment, the wafer reference MCA 740 is located 0.002 inches above the top surface 631 such that when the lift pad 630 rests on the recess bottom surface 706, the pad top surface 631 is below the wafer support level. In one embodiment, when the lift pad 630 rests on the pedestal 140" / 140'", the wafer reference MCA 740 does not contact the wafer 590 because a separate pedestal wafer support (e.g., MCA) located on the top surface of the pedestal 720 is elevated by approximately 0.002 inches or more. The wafer support disposed on the pedestal top surface 720 of the pedestal 140" / 140'" is configured to support the wafer 590 at a wafer support level above the top surface 720 when the wafer 590 is placed thereon.

[0100] also, Figure 7F is a perspective view of the bottom surface 632 of the lift pad 630 shown in FIG. 7 including the MCA 745 according to an embodiment of the present disclosure. In one embodiment, the wafer reference MCA 745 is 0.004 inches above the bottom surface 632. This ensures a uniform, repeatable gap between the lift pad 630 and the pedestal 140" / 140'" to provide a uniform, repeatable thermal resistance to the pedestal 140" / 140'". In one embodiment, the MCA 745 works in conjunction with a plurality of pad supports (not shown) disposed on the recess bottom surface 706 that are configured to support the lift pad 630 at a pad support level above the recess bottom surface 706.

[0101] Figure 8FIG800 is a flowchart illustrating a method for operating a process chamber configured for depositing a film on a wafer according to an embodiment of the present disclosure, wherein the method provides for rotating the wafer within the process chamber during processing without rotating the susceptor, which advantageously filters out both chamber asymmetry and susceptor asymmetry. Figure 1 -7 and the lift pad and susceptor configuration. The operations in flowchart 800 are applicable to wafer-sized lift pad and susceptor configurations, such as in the embodiments Figure 4 and 5A5C, and can be adapted to include lift pads and pedestal configurations having lift pads smaller than the wafer, such as in other embodiments. Figure 6 and 7A -Those shown in 7F.

[0102] At operation 805, the method includes moving a lift pad and pedestal configuration to a bottom position to receive a wafer. In one embodiment, the pedestal is in its bottom-most downward position. In lift pad and pedestal configurations that include a lift pin assembly, the lift pins can be extended for wafer transfer. In lift pad and pedestal configurations that do not include a lift pin assembly, the lift pad (e.g., smaller than the wafer) can be separated from the pedestal top surface by a sufficient displacement to allow access by the end effector arm for wafer transfer purposes. At operation 810, a wafer is placed on the assembly that includes a lift pad and pedestal configuration, wherein the lift pad is configured to rest on the pedestal. For example, this may involve placing the wafer on extended lift pins or placing the wafer on an extended lift pad. The lift pins or lift pad are lowered so that the wafer rests on a wafer support on the pedestal top surface, the lift pad top surface, or the ESC chuck surface.

[0103] The motion of the susceptor is controlled so that the susceptor moves up and down along its central axis. In one embodiment, a coupling mechanism transfers the motion of the susceptor to the lift pads of the lift pad and susceptor configuration. For example, at operation 820, after transporting the wafer, the lift pad and susceptor configuration are moved to a processing position. In the processing position, the lift pad rests on the susceptor, as previously described. Furthermore, the lift pad is positioned in a first orientation relative to the susceptor and / or the chamber. The first orientation can be arbitrary. For example, both the lift pad and susceptor can be positioned at a 0-degree angle within the chamber.

[0104] At operation 825, the method includes processing the wafer in a first orientation for a first number of processing cycles. For example, the deposition of one or more films may be performed using an atomic layer deposition (ALD) process, also known as atomic layer chemical vapor deposition (ALCVD). ALD produces very thin, highly conformal, smooth films with excellent physical properties. ALD uses volatile gases, solids, or vapors that are sequentially introduced (or pulsed) onto a heated substrate. In an ALD cycle, four operations are performed, which can be defined as an APBP sequence. In step A, a first precursor is introduced as a gas and absorbed (or adsorbed) into the substrate. Following step A, in step P, the reaction chamber is purged of the gaseous precursor. In step B, a second precursor is introduced as a gas that reacts with the absorbed precursor to form a monolayer of the desired material. Following step B, in step P, the reaction chamber is again purged of the second gaseous precursor. By adjusting this APBP sequence, the film produced by ALD is deposited as a monolayer at a time by repeatedly switching the sequential flow of two or more reactant gases onto the substrate. In this way, the film thickness can be adjusted based on the number of cycles of the APBP sequence performed. The first number of cycles may be defined as a value X. To illustrate embodiments of the present invention disclosing this lift pad and susceptor configuration that is capable of rotating a wafer within a processing chamber during processing without rotating the susceptor (which advantageously filters out both chamber asymmetry and susceptor asymmetry), the number X cycles may be 50 cycles.

[0105] At operation 830, the method includes raising the susceptor to an upward position. In one embodiment, the susceptor is raised to its topmost upward position. By moving the susceptor to the upward position, the lift pads are also raised upward relative to the susceptor (e.g., the top surface of the susceptor), thereby separating the wafer disposed on the lift pads from the susceptor 820. In one embodiment, when the susceptor approaches the top of its travel, the coupling mechanism raises the lift pads. In other words, the surface contact between the lift pads 830 and the susceptor 820 is broken, allowing the lift pads to rotate freely. Specifically, the lift pads are separated from the susceptor by a rotational displacement (e.g., approximately 1 mm). In this manner, the wafer supported by or disposed on the lift pads is also separated from the susceptor.

[0106] At operation 840, the method includes rotating the lift pad 830 relative to the base 820 (e.g., the top surface of the base) when the lift pad 830 is separated from the base 820. Specifically, the lift pad 830 is rotated from a first orientation to a second orientation relative to the base 820. For example, the second orientation may be 180 degrees apart from the first orientation (e.g., the first orientation is at 0 degrees).

[0107] At operation 845, the method includes lowering the lift pad to rest on the pedestal. Furthermore, at operation 850, the method includes moving the pedestal and corresponding lift pad back to the processing position. In one embodiment, the operations performed at 845 and 850 occur simultaneously through the action of a coupling mechanism such that by lowering the pedestal back to the processing position, the lift pad is also lowered until the lift pad rests on the pedestal.

[0108] At operation 855, the method includes processing the wafer for a second number of processing cycles (e.g., each cycle including an APBP sequence) with the lift pad in a second orientation relative to the susceptor. The second number of cycles may be defined as a value Y. To illustrate embodiments of the present invention disclosing a lift pad and susceptor configuration capable of rotating the wafer within the process chamber during processing without rotating the susceptor (which advantageously filters out both chamber asymmetry and susceptor asymmetry), the number Y of cycles may be 50 cycles.

[0109] In this way, the film thickness can also be adjusted based on the number of cycles (e.g., X+Y) of the APBP sequence performed. Because the wafer is also rotated relative to the susceptor for the second cycle number, both chamber asymmetry and susceptor asymmetry are filtered out, which provides improved film uniformity during wafer processing.

[0110] In the example provided above, the first cycle number is X and the second cycle number is Y, where for a total of 100 cycles performed in the APBP sequence, both X and Y include 50 cycles. That is, the first number of processing cycles (X) can be half of the total number of cycles performed in the first orientation, and the second number of processing cycles (Y) can also be half of the total number of cycles performed in the second orientation. Thus, 50 cycles are performed in the first angular orientation (e.g., 0 degrees), and another 50 cycles are performed in the second angular orientation (e.g., 180 degrees).

[0111] While embodiments of the present disclosure have been described with reference to a first orientation and a second orientation, other embodiments are well suited for performing wafer processing using one or more orientations (e.g., 1, 2, 3, etc.). In one embodiment, the orientations can be separated by equal angles, or in another embodiment, the orientations can be separated by unequal angles. Furthermore, at each orientation, one or more wafer processing (e.g., ALD, PECVD, etc.) cycles are performed. In one embodiment, the number of cycles performed at each orientation can be equally distributed, or in another embodiment, can be unequally distributed. That is, other embodiments are well suited for two or more sets of cycles at two or more relative angular orientations (e.g., between a lift pad and a pedestal), wherein each set can include an equal number of processing cycles (e.g., each cycle includes an APBP sequence), or a different number of processing cycles.

[0112] At 860, the method includes moving the lift pad and pedestal configuration to a bottom position to remove the wafer from the assembly comprising the lift pad and pedestal configuration. In one embodiment, the pedestal is in its bottom-most downward position. As previously described, in lift pad and pedestal configurations that include a lift pin assembly, the lift pins can be extended for wafer transfer. In lift pad and pedestal configurations that do not include a lift pin assembly, the lift pad (e.g., smaller than the wafer) can be separated from the top surface of the pedestal by a sufficient displacement to allow access by the end effector arm for wafer transfer. In this manner, the wafer can be removed from the extended lift pins or the extended lift pad using the end effector arm.

[0113] Figure 9A and 9B is a diagram illustrating a motion sequence for a lift pad and susceptor configuration according to an embodiment of the present disclosure, wherein the lift pad is sized to approximately match the wafer and includes rotating the wafer within the processing chamber during processing without rotating the susceptor, which advantageously filters out chamber asymmetries and susceptor asymmetries.

[0114] In particular, Figure 9A Shown first in Figure 4 and 5A 5B . The lift pad and pedestal arrangement 400 includes a pedestal 140', a lift pad 430, and a lift pin assembly including lift pins 557. In the transport position, the lift pad and pedestal arrangement 400 is configured such that the pedestal 140' is in a bottom position, with the lift pad resting on the pedestal. As indicated by the dashed circle labeled "A," lift pins 557 extend from the top surface of the lift pad 430 for wafer transport. Figure 9A Also shown is the lift pad and pedestal arrangement 400 in a pre-coating position, where a pre-coat layer and primer layer of a film are deposited in a process chamber prior to processing a wafer. As indicated by the dashed circle labeled "B," the lift pad 430 rests on the pedestal 140'. Additionally, when pre-coating deposition is occurring and no wafer is on the lift pad and pedestal arrangement 400, the lift pins 557 are positioned so that the tops of the pins 557 exactly fill the holes corresponding to the pad shafts in the lift pad 430, which is in position during pre-coating in the chamber. Figure 9AAlso shown is the lift pad and pedestal configuration 400 in a processing position, wherein one or more films may be deposited during wafer processing (e.g., PECVD and ALD processing) in single-station and multi-station systems. For example, wafer processing may implement an atomic layer deposition (ALD) process, which is also known as atomic layer chemical vapor deposition (ALCVD). ALD produces very thin, highly conformal, smooth films having excellent physical properties. As previously described, four operations are performed in one ALD cycle (e.g., an APBP sequence). As shown by the dashed circle labeled "C," the lift pad 430 is resting on the pedestal 140' and the lift pins 557' have been retracted into position within the body of the pedestal 140'. Figure 9A Also shown is the lift pad and base arrangement 400 in a rotated position, with the base in an upward position (e.g., a top-most upward position). As indicated by the dashed circle labeled "D," the lift pad 430 is separated from the base 140' for rotational displacement, such that the lift pad can be rotated relative to the base 140' to a second angular orientation.

[0115] Figure 9B According to one embodiment of the present disclosure, there is provided Figure 9A More details are given and it is shown first in Figure 4 and 5A -5B introduces a motion sequence for a lift pad and susceptor configuration 400 in which the lift pad is sized to approximately match the wafer and includes rotating the wafer within the processing chamber during processing without rotating the susceptor, which advantageously filters out both chamber asymmetry and susceptor asymmetry.

[0116] In the transport position, the lift pad and pedestal arrangement 400 is configured such that the pedestal 140' is in a bottom position, with the lift pad 430 resting on the pedestal 140'. Specifically, the lift pad and pedestal arrangement 400 is in a transport position, ready to receive and / or remove wafers, with the bottom of the pedestal 140' at a level within the corresponding chamber, indicated by line 901. Specifically, in one embodiment, the pedestal 140' is at its bottommost level, below the pre-coating position, in which the bottom of the pedestal 140' is at a level indicated by line 902, below the level associated with the processing position, indicated by line 903, and below the level associated with the rotation position, indicated by line 904. As shown, the lift pad 430 rests on the pedestal 140', as previously described. Additionally, the lift pins 557 extend beyond the top surface of the lift pad 430, in a position to receive wafers transported by, for example, an end effector arm.

[0117] Figure 9B902. The lift pad and pedestal configuration 400 is shown at a pre-coating level, with the bottom of the pedestal 140' at a level within the corresponding chamber indicated by line 902. It is important to note that the pre-coating position can be defined at any location within the chamber and is not limited to the level indicated by line 902. For example, the pre-coating position can be the same as the processing position, where the lift pad and pedestal configuration is positioned for wafer processing (e.g., PECVD, ALD, etc.). As shown, the lift pad 430 rests on the pedestal 140', as previously described. Additionally, when pre-coating deposition is occurring and no wafer is on the lift pad and pedestal configuration, the lift pins 557 are positioned so that the tops of the lift pins exactly fill the holes in the lift pad 430 that are in position during chamber pre-coating.

[0118] In particular, before processing the wafer, a pre-coat layer and a primer layer of the film are deposited in the processing chamber. When the carrier ring in contact with the wafer is included in a lift pad and susceptor configuration, the pre-coat and / or primer layer film can also coat the carrier ring. It is believed that applying a pre-coat to the chamber and the lift pad and susceptor configuration (e.g., contact support structure, such as MCA) and an optional carrier ring (wherein the pre-coat layer film is similar to the film that will be formed on the wafer during processing) improves the film formation on the wafer. Like this, a pre-coat film is formed before the wafer is introduced into the lift pad and susceptor configuration. In addition, the pre-coat layer of the wafer processing environment and any other primer layers are combined to improve the uniformity of the wafer film. For example, a typical primer layer thickness can be approximately 3 microns, and the pre-coat thickness is approximately 0.5 microns.

[0119] Figure 9B Also shown is the lift pad and pedestal configuration 400 in a processing position, wherein one or more films can be deposited during wafer processing (e.g., PECVD and ALD processing) in single-station and multi-station systems. Specifically, the pedestal 140' is at a level within the corresponding chamber indicated by line 903. As shown, the pedestal 140' is near its topmost position or level within the chamber. It is important to note that the processing position can be defined at any position and / or level within the chamber, depending on the chamber and / or process being implemented, and is not limited to the level indicated by line 903. As shown, the lift pad 430 rests on the pedestal 140', as previously described. Additionally, the lift pins 557 are positioned such that the top of the lift pins is within the body of the pedestal 140', allowing the top to be positioned anywhere within the pedestal 140' or lift pad 430. Furthermore, the lift pad 430 is in a first angular orientation relative to the pedestal 140'.

[0120] Figure 9BAlso shown is the lift pad and base configuration 400 in a rotated position, with the base in an upward position. In one embodiment, the bottom of the base 140' is located at the topmost level within the corresponding chamber, indicated by line 904. The lift pad 430 separates from the base 140' by a rotational displacement 940 (e.g., approximately 1 mm). In one embodiment, when the base 140' approaches the top of its travel, the coupling mechanism raises the lift pad 430, causing it to separate from the base's top surface by the rotational displacement 940. Specifically, when the base 140' moves a distance "d" to reach the top of its travel, the lift pad 430 moves a greater distance, which can be a multiple of "d." For example, when the base 140' reaches the top of its travel, the lift pad 430 separates from the base 140' by a rotational displacement 940 equal to twice the distance "d." Thereafter, the lift pad 430 can rotate relative to, for example, the base 140' from a first angular orientation to a second angular orientation. Thereafter, the lift pad and pedestal arrangement 400 may be returned to the processing position for additional processing cycles, or to the transport position for wafer transport.

[0121] Figure 9C is a diagram illustrating the orientation of a lift pad 430 relative to a pedestal 140' during a first processing sequence, a rotation sequence, and a second processing sequence in a lift pad and pedestal configuration 400, wherein the lift pad is sized approximately to a wafer, according to one embodiment of the present disclosure. In particular, Figure 9C The relative orientations of the lift pad 430 and the pedestal 140' (e.g., relative to each other and / or relative to a coordinate system 950 within the chamber) are shown when the lift pad and pedestal configuration 400 is in the processing position for a first number of processing cycles, when the configuration 400 is in the rotated position, and when the configuration 400 is in the processing position for a second number of processing cycles.

[0122] As shown, during a first number of processing cycles, the lift pad and pedestal arrangement 400 is in a processing position. Specifically, both the lift pad 430 and the pedestal 140' have an angular orientation of 0 degrees relative to a coordinate system 950 in the chamber. Furthermore, the lift pad 430 has a first angular orientation of 0 degrees relative to the pedestal 140' (i.e., the pedestal 140' provides the coordinate system).

[0123] in addition, Figure 9C The figure shows the rotation of lift pad 430 relative to base 140' when lift pad and base arrangement 400 is in a rotated position. Specifically, base 140' remains stationary at an angular orientation of 0 degrees (e.g., with reference to coordinate system 950), while lift pad 430 rotates from an angular orientation of 0 degrees to 180 degrees. That is, base 140' does not rotate. As shown, lift pad 430 is partway through its position at an angular orientation of 71 degrees.

[0124] Furthermore, during the second number of processing cycles, the lift pad and pedestal arrangement 400 is again in the processing position. However, due to the rotation of the lift pad, the pedestal 140' still has an angular orientation of 0 degrees relative to the coordinate system 950 in the chamber, and the lift pad has an angular orientation of 180 degrees. In other words, when processing the first number of cycles, the lift pad 430 has an angular orientation of 0 degrees relative to the pedestal 140', and when processing the second number of cycles, the lift pad 430, after rotation, has an angular orientation of, for example, 180 degrees relative to the pedestal 140'.

[0125] Figures 10A-10C is a diagram illustrating a motion sequence for a lift pad and susceptor configuration according to an embodiment of the present disclosure, wherein the lift pad is smaller than the wafer and includes rotating the wafer within the processing chamber during processing without rotating the susceptor, which advantageously filters out both chamber asymmetry and susceptor asymmetry. More specifically, Figure 10B Shown first in Figure 6 and 7A -The lift pad and base configuration 600 described in 7B. Figure 10C Shown first in Figure 7C The lift pad and base configuration 600' described in further detail further includes a lift pin assembly.

[0126] In particular, Figure 10A A lift pad and base arrangement 600 is shown that includes a base 140″ and a lift pad 630. The lift pad and base arrangement 600 is configured such that the lift pad 630 provides a lifting action and eliminates the need for a lift pin assembly. Specifically, in the transport position, the lift pad and base arrangement 600 is configured such that the base 140″ is in a downward position, wherein the lift pad 630 is separated from the base 140″ by a sufficient displacement for the end effector arm to enter. Figure 10A Also shown is a lift pad and pedestal configuration 600 in a processing position where one or more films may be deposited (eg, PECVD and ALD processes) during wafer processing in single-station and multi-station systems. Figure 10A Also shown is the lift pad and base configuration 600 in a rotated position, with the base 140" in an up position (eg, a topmost up position) and the lift pad 630 separated from the base 140" to handle the rotational displacement (eg, 1 mm).

[0127] Figure 10B According to one embodiment of the present disclosure, there is provided Figure 10A 6 and shows a motion sequence for a lift pad and susceptor configuration 600 in which the lift pad is smaller than the wafer and includes rotating the wafer within the processing chamber during processing without rotating the susceptor, which advantageously filters out both chamber asymmetry and susceptor asymmetry.

[0128] In the transport position of the lift pad and pedestal configuration, the bottom of the pedestal 140" is at a level within the corresponding chamber indicated by line 901. In particular, in one embodiment, the pedestal 140" is at its bottom-most level. In one embodiment, the transport position is below the pre-coating position indicated by line 902, and below the processing position indicated by line 903, and below the rotation position indicated by line 904. As shown, the lift pad 630 is separated from the lift pad 140" by a displacement 969 sufficient to enable the arm of the end effector to perform transport (place a wafer onto the lift pad 630, or remove a wafer from the lift pad 630), as shown. Figure 10B In one embodiment, when the base 140" approaches the bottom of its travel, the coupling mechanism raises the lift pad 630 such that the lift pad 630 is separated from the base top surface by a displacement 969.

[0129] Figure 10B Also shown is a lift pad and susceptor arrangement 600 in a pre-coating position, wherein a pre-coating layer and an undercoating layer of a film are deposited in a processing chamber prior to processing a wafer. In the pre-coating position, the bottom of the susceptor 140" is at a level within the corresponding chamber, such as indicated by line 902. The pre-coating position can be defined anywhere within the chamber and is not limited to the level indicated by line 902. As shown, the lift pad 630 rests on the susceptor 140", as previously described.

[0130] In the processing position of the lift pad and pedestal configuration 600, the bottom of the pedestal 140" is at a level within the corresponding chamber indicated by line 903. In one embodiment, the pedestal 140" is near its topmost position or level within the chamber, but the processing position can be at any level within the chamber depending on the chamber and / or process being implemented, as previously described. As shown, the lift pad 630 rests on the pedestal 140". Additionally, the lift pad 630 is in a first angular orientation relative to the pedestal 140".

[0131] In one embodiment, in the rotated position of the lift pad and base configuration 600, the bottom of the base 140 is at a topmost level within the corresponding chamber, as indicated by line 904. The lift pad 630 is separated from the base 140" by a process rotational displacement 1040 (e.g., approximately 1 mm). In one embodiment, when the base 140" approaches the top of its travel, the coupling mechanism raises the lift pad 630 via the pad shaft 560, causing the lift pad 630 to separate from the base top surface by a process rotational displacement 1040. In one embodiment, when the pedestal 140″ approaches the top of its travel, the coupling mechanism raises the lift pad 630 such that the lift pad 630 is separated from the pedestal top surface by the process rotational displacement 1040. For example, when the pedestal 140″ reaches the top of its travel by traveling a particular distance “f” by the pedestal 140″, the lift pad 630 moves a greater distance, which may be a multiple of “f” (e.g., twice “f”). Thereafter, the lift pad 630 may be rotated (e.g., relative to the pedestal 140″) from a first angular orientation to a second angular orientation and then returned to the processing position for additional processing cycles, or returned to the transport position for wafer transport.

[0132] Figure 10C According to one embodiment of the present disclosure, there is provided Figure 10A 1 and 2, and shows the motion sequence of a lift pad and susceptor arrangement 600' including a lift pin assembly, wherein the lift pad 630 is smaller than the wafer and includes rotating the wafer within the processing chamber during processing without rotating the susceptor 140", which advantageously filters out both chamber asymmetry and susceptor asymmetry. As previously described, the lift pad and susceptor arrangement 600' includes the lift pad 630, the susceptor 140", and the lift pin assembly.

[0133] In the transport position of the lift pad and pedestal configuration 600', the bottom of the pedestal 140'" is at a level within the corresponding chamber indicated by line 901. In particular, in one embodiment, the pedestal 140'" is at its bottom-most level. In one embodiment, the transport position is below the pre-coating position indicated by line 902, and below the processing position indicated by line 903, and below the rotation position indicated by line 904. As shown, the lift pad 630 rests on the pedestal 140'" as previously described. In addition, the lift pins 557' extend beyond the top surface of the pedestal 140'" and the lift pad 630, in a position to receive a wafer transported by the arm of the end effector, or in a position to remove a wafer, for example, by the end effector.

[0134] Figure 10CAlso shown is the lift pad and pedestal configuration 600' in a pre-coating position, wherein a pre-coating layer and an undercoating layer of a film are deposited in a processing chamber prior to processing a wafer. In the pre-coating position, the bottom of the pedestal 140' is at a level within the corresponding chamber, for example, as indicated by line 902. The pre-coating position can be defined anywhere within the chamber and is not limited to the level indicated by line 902. As shown, the lift pad 630 rests on the pedestal 140', as previously described. Additionally, when pre-coating deposition is occurring and no wafer is on the lift pad and pedestal configuration, the lift pins 857 are positioned such that the tops of the lift pins just fill the holes in the lift pad 830 that are in position during chamber pre-coating.

[0135] In the processing position of the lift pad and pedestal arrangement 600', the bottom of the pedestal 140'" is at a level within the corresponding chamber indicated by line 903. As shown, the pedestal 140'" is near its topmost position or level within the chamber, but the processing position can be at any level within the chamber, as previously described. As shown, the lift pad 630 rests on the pedestal 140'", as previously described. Additionally, the lift pins 557' are positioned so that the tops of the lift pins are within the pedestal 140'", but the tops can be positioned anywhere within the pedestal 140'".

[0136] In one embodiment, in the rotated position of the lift pad and base configuration 600', the bottom of the base 140'" is at a topmost level within the corresponding chamber, indicated by line 904. The lift pad 630 is separated from the base 140'" by a handle rotational displacement 1040 (e.g., approximately 1 mm). In one embodiment, when the base 140'" approaches the top of its travel, the coupling mechanism raises the lift pad 630 via the pad shaft 560', such that the lift pad 630 is separated from the base top surface to handle the rotational displacement 1040. In one embodiment, when the base 140'" approaches the top of its travel, the coupling mechanism raises the lift pad 630, such that the lift pad 630 is separated from the base top surface to handle the rotational displacement 1040. For example, when the base 140'" reaches the top of its travel after moving a certain distance "f" through the base 140'", the lift pad 630 moves a greater distance, which may be a multiple of "f" (e.g., twice "f"). Thereafter, the lift pad 630 may be rotated (eg, relative to the base 140'") from the first angular orientation to a second angular orientation and then returned to the processing position for additional processing cycles or to the transport position for wafer transport.

[0137] Figure 10Dis a diagram illustrating the orientation of a lift pad 630 relative to a pedestal 140″ in a lift pad and pedestal configuration 600 or relative to a pedestal 140″′ in a lift pad and pedestal configuration 600′ during a first processing sequence, a rotation sequence, and a second processing sequence, wherein the lift pad 630 is smaller than the wafer. In particular, Figure 10D The relative orientations (e.g., relative to each other and / or relative to a coordinate system 1050 within the chamber) of the lift pad 630 and pedestal 140″ / pedestal 140″ are shown when the lift pad and pedestal arrangement 600 / 600′ is in a processing position for a first number of processing cycles, in a rotated position, or in a processing position for a second number of processing cycles.

[0138] As shown, during a first number of processing cycles, the lift pad and pedestal arrangement 600 / 600' is in a processing position. Specifically, the lift pad 630 and the pedestal 140" / 140"' both have an angular orientation of 0 degrees relative to a coordinate system 1050 in the chamber. Furthermore, the lift pad 630 has a first angular orientation of 0 degrees relative to the pedestal 140" / 140"' (i.e., the pedestal 140" / 140"' provides the coordinate system).

[0139] in addition, Figure 10D 140" / 140"') is shown. Specifically, the base 140" / 140"' remains stationary at an angular orientation of 0 degrees (e.g., with reference to coordinate system 1050), while the lift pad 630 rotates from an angular orientation of 0 degrees to 180 degrees. That is, the bases 140" and 140"' do not rotate. As shown, the lift pad 630 is partway through its orientation at an angular orientation of 71 degrees.

[0140] Furthermore, during the second number of processing cycles, the lift pad and base arrangement 600 / 600' is again in the processing position. However, due to the rotation of the lift pad, the base 140" / 140"' still has an angular orientation of 0 degrees within the chamber relative to the coordinate system 1050, and the lift pad has an angular orientation of 180 degrees. In other words, when processing the first number of cycles, the lift pad 630 has an angular orientation of 0 degrees relative to the base 140" / 140"', and when processing the second number of cycles, the lift pad 630 is rotated to have an angular orientation of 180 degrees relative to the base 140" / 140"', for example.

[0141] Figure 11 A control module 1100 is shown for controlling the above system. In one embodiment, Figure 1The control module 110 may include some of the exemplary components of the control module 1100. For example, the control module 1100 may include a processor, a memory, and one or more interfaces. The control module 1100 can be used to control the devices in the system based in part on the sensed values. As an example only, the control module 1100 can control one or more of the valve 1102, the filter heater 1104, the pump 1106, and the other devices 1108 based on the sensed values ​​and other control parameters. The control module 1100, for example, only receives the sensed values ​​from the pressure gauge 1110, the flow meter 1112, the temperature sensor 1114, and / or the other sensors 1116. The control module 1100 can also be used to control the process conditions during the precursor delivery and film deposition. The control module 1100 will typically include one or more memory devices and one or more processors.

[0142] The control module 1100 can control the activities of the precursor delivery system and the deposition equipment. The control module 1100 executes a computer program that includes an instruction set for controlling the processing time, the delivery system temperature, the pressure differential across the filter, valve position, gas mixture, chamber pressure, chamber temperature, substrate temperature, RF power level, substrate chuck or pedestal position, and other parameters of a specific process. The control module 1100 can also monitor the pressure differential and automatically switch the vapor precursor delivery from one or more paths to one or more other paths. In some embodiments, other computer programs stored on a memory device associated with the control module 1100 can be used.

[0143] There will typically be a user interface associated with the control module 1100. The user interface may include a display 1118 (e.g., a display screen and / or graphical software display of equipment and / or process conditions) and a user input device 1120 (e.g., a pointing device, keyboard, touch screen, microphone, etc.).

[0144] Computer programs for controlling precursor delivery, deposition, and other processes in a process sequence can be written in any conventional computer-readable programming language (e.g., assembly language, C, C++, Pascal, Fortran, or others). Compiled object code or scripts are executed by a processor to perform the tasks identified in the program.

[0145] Control module parameters relate to process conditions such as filter differential pressure, process gas composition and flow rate, temperature, pressure, plasma conditions such as RF power level and low frequency RF frequency, cooling gas pressure, and chamber wall temperature.

[0146] The system software can be designed or configured in many different ways. For example, various chamber component subroutines or control objects can be written to control the operation of the chamber components necessary to perform the deposition processes of the present invention. Examples of programs or program segments used for this purpose include substrate positioning code, process gas control code, pressure control code, heater control code, and plasma control code.

[0147] The substrate positioning program may include program code for controlling chamber components that are used to load the substrate onto a pedestal or chuck and control the spacing between the substrate and other parts of the chamber (e.g., gas inlet and / or target). The process gas control program may include code for controlling gas composition and flow rate and, optionally, for flowing gas into the chamber to stabilize the pressure in the chamber prior to deposition. The filter monitoring program may include code for comparing a measured differential with a predetermined value and / or code for switching paths. The pressure control program may include code for controlling the pressure in the chamber by adjusting, for example, a throttle in the exhaust system of the chamber. The heater control program may include code for controlling current to a heating unit used to heat components in the precursor delivery system, to the substrate and / or other parts of the system. Alternatively, the heater control program may control the delivery of a heat transfer gas, such as helium, to the substrate chuck.

[0148] Examples of sensors that can be monitored during the deposition process include, but are not limited to, mass flow control modules, pressure sensors such as pressure gauge 1110, temperature or thermal sensors, and thermocouples (e.g., temperature sensors 1114 / 220) located in the delivery system, pedestal, or chuck. Appropriately programmed feedback and control algorithms can be used with data from these sensors to maintain desired process conditions. The above describes implementations of the present disclosure in single-chamber or multi-chamber semiconductor processing tools.

[0149] In some implementations, the controller is part of a system, which can be part of the examples above. Such a system can include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (substrate pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller" that can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, substrate transfer in and out tools and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0150] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits can include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing a particular process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0151] In some implementations, the controller can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud" or all or part of a wafer fab host system that can allow remote access to substrate processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance standards for multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network (which can include a local network or the Internet).

[0152] The remote computer may include a user interface that enables parameters and / or settings to be entered or programmed, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool with which the controller is configured to interface or control the tool. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers that are networked together and work toward a common purpose (e.g., the processes and controls described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0153] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0154] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in the material transport of wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

[0155] The foregoing description of the embodiments has been provided for the purposes of illustration and description. This is not intended to be exhaustive, nor to limit the present disclosure. The individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but are interchangeable where applicable and can be used in selected embodiments, even if not specifically shown or described. The same may also differ in many respects. Such variations are not to be considered a departure from the present disclosure, and all such modifications are intended to be included within the scope of the present disclosure.

[0156] Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. The present embodiments are therefore to be considered as illustrative and not restrictive, and the embodiments are not to be limited to the details given herein, but may be modified within the scope and equivalents of the claims.

Claims

1. An assembly for use in a processing chamber for depositing a film on a wafer, comprising: a base having a base top surface centered about the central axis; a lift pad configured to support the wafer placed on a top surface of the lift pad; a recess located within the base top surface centered about the central axis, the recess having a recess top surface configured to support the lift pad when the lift pad rests on the recess surface; as well as a pad shaft extending from a bottom portion of the lift pad along the central axis and configured to separate the lift pad from the base and rotate the lift pad relative to the base; Wherein the lifting pad is configured to separate from the base along the central axis.

2. The assembly of claim 1, wherein a diameter of the pad top surface is smaller than a diameter of the wafer.

3. The assembly of claim 1 , wherein when the lift pad is placed on the recess top surface, the pad top surface is coplanar with the base top surface.

4. The assembly of claim 1, wherein: The pad shaft is configured to move the lifting pad along the central axis, wherein the pad shaft is positioned in a travel space extending through the base along the central axis.

5. The assembly of claim 4, wherein: The pad shaft is configured to separate the lifting pad from the base along the central axis so that the pad top surface is separated from the base top surface to handle rotational displacement.

6. The assembly according to claim 5, wherein The pad shaft is configured to rotate the lift pad relative to the base top surface when the pad shaft is decoupled from the base between at least a first angular orientation and a second angular orientation.

7. The assembly of claim 1, wherein the lift pad is configured to move with the base.

8. The assembly of claim 1, wherein the pad shaft is configured to separate the lift pad from the base a sufficient distance to allow end effector access.

9. The assembly of claim 1 , further comprising: A raised rim is provided on an outer edge of the susceptor top surface, the raised rim being configured to block lateral movement of a wafer placed on the susceptor.

10. An assembly for use in a processing chamber for depositing a film on a wafer, comprising: a lift pad configured to support the wafer positioned on a pad top surface of the lift pad, the lift pad being centered about a central axis, wherein a diameter of the pad top surface is smaller than a diameter of the wafer; a pad shaft extending from a bottom portion of the lifting pad along the central axis, the pad shaft being configured to move the lifting pad along the central axis; an annular washer extending from the bottom of the lifting pad, the annular washer being configured to be fixedly coupled to the pad shaft; a base having a base top surface centered about the central axis, wherein the pad shaft is positioned in a travel space extending through the base along the central axis; and a recess in the base top surface and having a recess surface configured to support the lift pad when the lift pad rests on the recess surface, the recess being centered about the central axis, The pad shaft is configured to separate the lifting pad from the base along the central axis so that the pad top surface is separated from the base top surface to handle rotational displacement.

11. The assembly of claim 10, wherein: The annular washer is configured to surround an end portion of the washer shaft.

12. The assembly according to claim 10, wherein When the lift pad rests on the recessed surface, the pad top surface is coplanar with the base top surface.

13. The assembly of claim 10, wherein the pad shaft is configured to separate the lift pad from the base a distance sufficient to allow end effector access.

14. The assembly of claim 10, further comprising: a central shaft extending from the bottom of the base along the central axis, the central shaft being configured to move the base along the central axis, wherein the travel space extends through the central shaft along the central axis, and wherein the pad shaft is positioned in the travel space extending through the central shaft along the central axis.

15. The assembly of claim 14, wherein the lift pad is configured to move with the base.

16. The assembly of claim 14, wherein the central shaft is configured to move the base to an uppermost position, and wherein the pad shaft enables the lift pad to handle rotational displacement separately from the base when the base is in the uppermost position.

17. The assembly of claim 14, wherein the central axis is configured to move the base to a bottom-most position, and wherein the pad axis is configured to separate the lift pad from the base along the central axis by a displacement sufficient to enable entry of an end effector arm.

18. The assembly of claim 10, wherein the pad shaft is configured to rotate the lift pad relative to the base top surface when the pad shaft is decoupled from the base between at least a first angular orientation and a second angular orientation.

19. The assembly of claim 10, further comprising: a plurality of minimum contact areas (MCAs) disposed on the susceptor top surface configured to support the wafer when a lift pad rests on the recessed surface, Wherein, the lifting pad rotates relative to the plurality of minimum contact areas.

20. The assembly of claim 10, further comprising: A raised rim is provided on an outer edge of the susceptor top surface, the raised rim being configured to block lateral movement of a wafer placed on the susceptor.

21. The assembly of claim 10, further comprising: A lift pin assembly includes a plurality of lift pins extending through a plurality of base shafts disposed within the base.

22. An assembly for use in a processing chamber for depositing a film on a wafer, comprising: a lift pad configured to support the wafer positioned on a pad top surface of the lift pad, the lift pad being centered about a central axis, wherein a diameter of the pad top surface is smaller than a diameter of the wafer; a pad shaft extending from a bottom portion of the lifting pad along the central axis, the pad shaft being configured to move the lifting pad along the central axis; a base having a base top surface centered about the central axis, wherein the pad shaft is positioned in a travel space extending through the base along the central axis; and a recess in the base top surface and having a recess surface configured to support the lift pad when the lift pad rests on the recess surface, the recess being centered about the central axis, wherein the pad shaft is configured to separate the lifting pad from the base along the central axis and to rotate the lifting pad relative to the base.

23. The assembly of claim 22, further comprising: A raised rim is provided on an outer edge of the susceptor top surface, the raised rim being configured to block lateral movement of a wafer placed on the susceptor.

24. An assembly for use in a plasma processing chamber, comprising: a base having a base top surface centered about the central axis; a central shaft extending from a bottom portion of the base and configured to move the base along the central axis; a lift pad configured to support a wafer resting on a top surface of the lift pad, the lift pad being centered about the central axis; and a pad shaft extending from the bottom of the lifting pad along the central axis, the pad shaft being configured to separate the lifting pad from the base along the central axis when the base is in the bottommost position, the pad shaft being further configured to separate the lifting pad from the base and rotate the lifting pad relative to the base.

25. The assembly of claim 24, in, The central axis is configured to move the base to the bottommost position.

26. The assembly of claim 24, in, The pad shaft is configured to separate the lift pad from the base along the central axis by a displacement sufficient to allow entry of an end effector arm.

27. The assembly of claim 24, in, The lift pad is configured to move upwardly along the central axis relative to a top surface of a base when the base is in the bottommost position.

28. The assembly of claim 27, in, The lifting pad is separated from the base top surface by the pad shaft by a displacement sufficient to allow entry of an end effector arm.

29. The assembly of claim 24, in, The pad shaft is configured to move the lifting pad along the central axis, wherein the pad shaft is positioned in a travel space extending through the base along the central axis.

30. The assembly of claim 24, wherein The lift pad is configured to move with the base when the base is not moved to the bottommost position.

31. The assembly of claim 24, further comprising: A plurality of minimum contact areas (MCAs) are disposed on the pad top surface, the plurality of minimum contact areas being configured to support the wafer.

32. The assembly of claim 24, further comprising: A plurality of minimum contact areas (MCAs) are disposed on a top surface of the susceptor, the plurality of minimum contact areas being configured to support the wafer.

33. The assembly of claim 24, further comprising: A raised rim is provided on an outer edge of the susceptor top surface, the raised rim being configured to block lateral movement of a wafer placed on the susceptor.

34. The assembly of any one of claims 24 to 33, wherein the diameter of the pad top surface is smaller than the diameter of the wafer.

35. An assembly for use in a plasma processing chamber, comprising: a base having a base top surface centered about the central axis; a lift pad configured to support a wafer; a pad shaft configured to move the lift pad along the central axis, wherein the pad shaft is positioned in a travel space extending through the base along the central axis, and the pad shaft is further configured to separate the lift pad from the base and rotate the lift pad relative to the base.

36. The assembly of claim 35, further comprising: A central shaft is configured to move the base along the central axis.

37. The assembly of claim 36, further comprising: a travel space extending along the central axis through the central shaft and the base, Wherein, the pad shaft is located in the travel space.

38. The assembly of claim 37, The pad shaft separates the lift pad from the base a sufficient distance to allow entry of an end effector.

39. The assembly of claim 38, in, The central shaft is configured to move the base to a bottommost position, Wherein, when the base is at the bottommost position, the pad shaft separates the lifting pad from the base.

40. The assembly of claim 35, in, The central axis is configured to move the base to an uppermost position, Wherein, when the base is at the uppermost position, the pad shaft separates the lifting pad from the base.

41. The assembly of claim 35, The pad shaft is configured to rotate relative to the base top surface when decoupled from the base between at least a first angular orientation and a second angular orientation.

42. The assembly of claim 35, wherein the lift pad is configured to move with the base.

43. The assembly of claim 35, further comprising: A raised rim is provided on an outer edge of the susceptor top surface, the raised rim being configured to block lateral movement of a wafer placed on the susceptor.

44. An assembly for use in a plasma processing chamber, comprising: a base having a base top surface centered about the central axis; a recess in the base top surface centered about the central axis, the recess having a recess top surface; a lift pad configured to support a wafer; a pad shaft configured to move the lifting pad along the central axis; a central shaft configured to move the base along the central axis, wherein the pad shaft is positioned in a travel space extending through the base along the central axis, and the pad shaft is configured to separate the lifting pad from the base and rotate the lifting pad relative to the base, wherein the recess is configured to receive the lift pad when the lift pad rests on a top surface of the recess.

45. The assembly of claim 44, in, When the lifting pad rests on the top surface of the recess, the top surface of the lifting pad is coplanar with the top surface of the base. The pad top surface is configured to support the wafer.

46. ​​The assembly of claim 44, further comprising: a travel space extending along the central axis through the central shaft and the base, Wherein, the pad shaft is located in the travel space.

47. The assembly of claim 46, in, The central shaft is configured to move the base to a bottommost position, Wherein the pad shaft is configured to separate the lift pad from the base a distance sufficient to allow access by an end effector when the base is in the bottommost position.

48. The assembly of claim 46, in, The central axis is configured to move the base to an uppermost position, Wherein, the pad shaft is configured to separate the lifting pad from the base to handle the rotational displacement when the base is in the uppermost position.

49. The assembly of claim 46, The pad shaft is configured to rotate relative to the base top surface when the pad shaft is separated from the base between at least a first angular orientation and a second angular orientation.

50. The assembly of claim 43, wherein the lift pad is configured to move with the base.

51. The assembly of claim 43, in, The diameter of the top surface of the lifting pad is smaller than the diameter of the wafer, The pad top surface is configured to support the wafer.

52. The assembly of claim 43, wherein the diameter of the top surface of the lifting pad is equal to the diameter of the wafer, in, The pad top surface is configured to support the wafer.

53. The assembly of claim 43, further comprising: A raised rim is provided on an outer edge of the susceptor top surface, the raised rim being configured to block lateral movement of a wafer placed on the susceptor.

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