Alignment device, film forming device, alignment method, method for manufacturing electronic device, and storage medium

Abstract

The present application provides an alignment device, a film forming device, an alignment method, a manufacturing method of an electronic device, and a storage medium, which can suppress the deviation of alignment accuracy and time caused by the difference of the cut-out part with respect to the alignment of the substrate cut out from a large substrate. The alignment device includes a substrate support member that supports the peripheral edge of any substrate obtained by dividing a large substrate; a contact / separation member that brings the substrate and a mask close to and separates them in the direction of gravity; a measurement member that measures the positional displacement of the substrate and the mask; and a position adjustment member that adjusts the relative position of the substrate and the mask and makes them coincide with each other when the positional displacement is within an allowable range, wherein the alignment device includes an acquisition member that acquires substrate information related to the position in the large substrate before division, and when the relative position is adjusted in a state where the substrate and the mask are separated after the positional displacement is measured, the position adjustment member is controlled based on the positional displacement and the substrate information.

Description

TECHNICAL FIELD

[0001] The present application relates to an alignment device, a film forming device, an alignment method, a manufacturing method of an electronic device, and a storage medium, and particularly relates to an alignment technique of a substrate and a mask. BACKGROUND

[0002] In the manufacturing of an organic EL display or the like, a mask is used to perform film formation of an evaporation material on a substrate. As a pre-treatment of the film formation, alignment of the mask and the substrate is performed so that both are coincided. In the alignment, measurement of positional displacement of the substrate and the mask and adjustment of the relative position of the substrate and the mask based on the measurement result are performed. In Patent Literature 1, adjustment of the relative position of the substrate and the mask is disclosed so as to eliminate errors caused by characteristics inherent to the device.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2008-4358 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] An organic EL display is manufactured by forming a plurality of layers on a substrate using various film formation processes. At this time, depending on the situation of the production line, sometimes a large substrate (also referred to as a mother glass) is processed before a certain process, and then the large substrate is cut and divided into a plurality of smaller substrates, and the divided substrates are processed such as film formation in the subsequent processes. For example, in the manufacturing of an organic EL display for a smart phone, in a backplane process (a TFT formation process, an anode formation process, or the like), a sixth-generation large substrate (about 1500 mm x about 1850 mm) is subjected to film formation processing or the like. Then, the large substrate is cut in half to be a sixth-generation half-cut substrate (about 1500 mm x about 925 mm), and the sixth-generation half-cut substrate is subjected to film formation processing or the like in the subsequent processes.

[0008] In this case, substrates having different cut-out positions are sequentially carried into an alignment device provided in a film forming device used in a film formation process later than the division process, and alignment is performed. However, among the substrates cut out from the large substrate, depending on which part of the large substrate the substrate is cut out from (for example, depending on whether it is a part of the left half or a part of the right half of the mother glass), the characteristics of the substrate such as the size and the rigidity distribution sometimes differ. For the substrates having different characteristics of the substrate, the behavior at the time of alignment also differs. As a result, sometimes the alignment accuracy and the time between the substrates deviate.

[0009] The present application relates to alignment of substrates cut from a large substrate, and provides a technique capable of suppressing deviation in alignment accuracy and time caused by differences in cutout positions.

[0010] Technical solution for solving the problem

[0011] According to the present application, there is provided an alignment device including:

[0012] a substrate support member that supports a peripheral portion of any one of a plurality of substrates obtained by dividing a large substrate;

[0013] a mask support member that supports a mask;

[0014] an approach and separation member that approaches and separates the substrate supported by the substrate support member and the mask supported by the mask support member in a direction of gravity;

[0015] a measurement member that measures a positional displacement amount of the substrate and the mask;

[0016] a position adjustment member that adjusts a relative position of the substrate and the mask; and

[0017] a control member that controls the position adjustment member,

[0018] in a case where the positional displacement amount is within an allowable range, causing the substrate and the mask to coincide with each other,

[0019] characterized in that

[0020] the alignment device includes an acquisition member that acquires substrate information of a substrate supported by the substrate support member, the substrate information being related to a position in the large substrate before division,

[0021] when the positional displacement amount is measured by the measurement member in a state where the substrate and the mask are locally in contact with each other, and when the relative position is adjusted by the position adjustment member in a state where the substrate and the mask are separated by the approach and separation member, the control member controls the position adjustment member on the basis of the positional displacement amount measured by the measurement member and the substrate information acquired by the acquisition member.

[0022] Further, according to the present application, there is provided an alignment device including:

[0023] a substrate support member that supports a peripheral portion of any one of a plurality of substrates obtained by dividing a large substrate;

[0024] a mask support member that supports a mask;

[0025] a contact / separation member that brings the substrate supported by the substrate support member and the mask supported by the mask support member close to and separates each other in a direction of gravity;

[0026] a measurement member that measures a positional displacement between the substrate and the mask;

[0027] a position adjustment member that adjusts a relative position between the substrate and the mask; and

[0028] a control member that controls the position adjustment member,

[0029] repeatedly performs a measurement operation by the measurement member and a position adjustment operation by the position adjustment member until the positional displacement becomes within an allowable range, and in a case where the positional displacement is within the allowable range, causes the substrate and the mask to coincide with each other,

[0030] characterized by

[0031] the alignment device includes an acquisition member that acquires substrate information of a substrate supported by the substrate support member, the substrate information being related to a portion in the large substrate before the division,

[0032] the control member controls the position adjustment member on the basis of the positional displacement measured by the measurement member, the substrate information acquired by the acquisition member, and a number of times of the position adjustment operation.

[0033] Further, according to the present application, there is provided a film formation device characterized by

[0034] the film formation device includes:

[0035] the alignment device; and

[0036] a film formation member that performs film formation on the substrate via the mask.

[0037] Further, according to the present application, there is provided an alignment method characterized by

[0038] a support process in which a peripheral edge portion of any one of a plurality of substrates obtained by dividing a large substrate is supported;

[0039] a measurement process in which a positional displacement between the substrate and a mask is measured in a state in which the substrate and the mask are partially brought into contact with each other; and

[0040] a position adjustment process in which, after the measurement process, the relative position of the substrate and the mask is adjusted based on the positional displacement measured in the measurement process, with the substrate and the mask being separated from each other,

[0041] in a case where the positional displacement is within an allowable range, the substrate and the mask are caused to coincide with each other,

[0042] characterized by comprising:

[0043] the alignment method includes a process of acquiring substrate information of a substrate on which the adjustment of the relative position is performed, the substrate information being related to a portion in the large substrate before the division,

[0044] in the position adjustment process, the relative position of the substrate and the mask is adjusted based on the positional displacement measured in the measurement process and the substrate information acquired in the process of acquiring.

[0045] Further, according to the present application, there is provided an alignment method including:

[0046] a support process in which a peripheral edge portion of any one of a plurality of substrates obtained by dividing a large substrate is supported;

[0047] a measurement process in which a positional displacement of the substrate and a mask is measured with the substrate and the mask being partially in contact with each other; and

[0048] a position adjustment process in which, after the measurement process, the relative position of the substrate and the mask is adjusted based on the positional displacement measured in the measurement process, with the substrate and the mask being separated from each other,

[0049] the measurement process and the position adjustment process are repeatedly performed until the positional displacement becomes within an allowable range, and in a case where the positional displacement is within the allowable range, the substrate and the mask are caused to coincide with each other,

[0050] characterized by comprising:

[0051] the alignment method includes a process of acquiring substrate information of a substrate on which the adjustment of the relative position is performed, the substrate information being related to a portion in the large substrate before the division,

[0052] in the position adjustment process, the relative position of the substrate and the mask is adjusted based on the positional displacement measured in the measurement process, the substrate information acquired in the process of acquiring, and the number of times of the position adjustment process.

[0053] Further, according to the present application, there is provided a manufacturing method of an electronic device, characterized by,

[0054] The manufacturing method of the electronic device includes:

[0055] an alignment process in which alignment of a substrate and a mask is performed by the above alignment method; and

[0056] a film forming process in which film formation is performed on the substrate via the mask whose relative positional adjustment has been performed by the alignment process.

[0057] Further, according to the present application, there is provided a computer-readable storage medium storing a program for causing a computer to execute the above alignment method.

[0058] Effects of the Invention

[0059] According to the present application, regarding alignment of a substrate cut out from a large substrate, it is possible to provide a technology capable of suppressing deviation in alignment accuracy, time, and the like, caused by differences in cut-out positions. BRIEF DESCRIPTION OF DRAWINGS

[0060] Figure 1 is a schematic view of a part of a production line of an electronic device.

[0061] Figure 2 is a schematic view of a film forming apparatus of an embodiment of the present application.

[0062] Figure 3 is an explanatory view of a substrate support unit.

[0063] Figure 4 is an explanatory view of an adjustment unit.

[0064] Figure 5 is an explanatory view of a measurement unit.

[0065] Figure 6 is a view showing an example of a large substrate and a cut substrate.

[0066] Figure 7 (A) and (B) are explanatory views showing examples of effects on characteristics of a substrate.

[0067] Figure 8 is a flowchart showing a control processing example.

[0068] Figure 9 is a flowchart showing a control processing example.

[0069] Figure 10 (A) to (C) are explanatory views of actions of an alignment apparatus.

[0070] Figure 11 (A) to (C) are action explanatory diagrams of the alignment device.

[0071] Figure 12 (A) to (C) are action explanatory diagrams of the alignment device.

[0072] Figure 13 (A) to (C) are action explanatory diagrams of the alignment device.

[0073] Figure 14 (A) and (B) are action explanatory diagrams of the alignment device.

[0074] Figure 15 (A) is an overall view of an organic EL display device, and (B) is a view showing a cross-sectional configuration of one pixel.

[0075] Explanation of Reference Numerals

[0076] 1 film forming device, 2 alignment device, 5 mask stage (mask support member), 6 substrate support unit (substrate support member), 8 second measurement unit (measurement member), 141 processing unit (control member, acquisition member, update member), 142 storage unit (storage member), 20 position adjustment unit (position adjustment member), 22 approach / withdrawal unit (approach / withdrawal member), 100 substrate, 101 mask DETAILED DESCRIPTION

[0077] Hereinafter, the embodiments will be described in detail with reference to the drawings. Furthermore, the following embodiments do not limit the technical scope of the present application. Although a plurality of features are described in the embodiments, all of the features described above are not necessarily essential to the application, and a plurality of features can be arbitrarily combined. Moreover, in the drawings, the same or similar structures are denoted by the same reference numerals, and repeated explanation is omitted.

[0078] <Production line of electronic device>

[0079] Figure 1 is a schematic view showing a part of the structure of a production line of an electronic device to which the film forming device of the present application can be applied. Figure 1 The production line of is used for manufacturing, for example, a display panel of an organic EL display device for a smartphone, and a substrate 100 is sequentially carried to film forming modules 301, and film formation of an organic EL is performed on the substrate 100.

[0080] In the film formation module 301, a plurality of film formation chambers 303a to 303d that perform film formation processing on the substrate 100 and a mask storage chamber 305 that stores masks before and after use are arranged around a transfer chamber 302 that has an octagonal shape in plan view. A transfer robot (transfer member) 302a that transfers the substrate 100 is arranged in the transfer chamber 302. The transfer robot 302a includes a hand that holds the substrate 100 and a multi-joint arm that moves the hand in the horizontal direction. In other words, the film formation module 301 is a cluster-type film formation unit in which the plurality of film formation chambers 303a to 303d are arranged so as to surround the transfer robot 302a. Further, in the case where the film formation chambers 303a to 303d are collectively referred to or are not distinguished, it is described as the film formation chamber 303.

[0081] On the substrate 100 transfer direction (arrow direction), a buffer chamber 306, a rotation chamber 307, and a handover chamber 308 are arranged on the upstream side and the downstream side of the film formation module 301, respectively. In the manufacturing process, each chamber is maintained in a vacuum state. Further, in the case where the buffer chamber 306, the rotation chamber 307, and the handover chamber 308 are collectively referred to or are not distinguished, it is described as the buffer chamber 306. Figure 1 Only one film formation module 301 is illustrated in the production line 300, but the production line of the present embodiment has a plurality of film formation modules 301, and the plurality of film formation modules 301 have a structure in which they are connected by a connection device composed of the buffer chamber 306, the rotation chamber 307, and the handover chamber 308. Further, the structure of the connection device is not limited thereto, and for example, it can be composed of only the buffer chamber 306 or the handover chamber 308.

[0082] The transfer robot 302a performs the transfer of the substrate 100 from the handover chamber 308 on the upstream side to the transfer chamber 302, the transfer of the substrate 100 between the film formation chambers 303, the transfer of the mask between the mask storage chamber 305 and the film formation chamber 303, and the transfer of the substrate 100 from the transfer chamber 302 to the buffer chamber 306 on the downstream side.

[0083] The buffer chamber 306 is a chamber for temporarily storing the substrate 100 depending on the operation state of the production line. In the buffer chamber 306, a multi-layer substrate storage shelf (also referred to as a cassette) that can store a plurality of substrates 100 while maintaining a horizontal state in which the processed surface (film formation surface) of the substrate 100 is oriented downward in the direction of gravity, and a lifting mechanism that lifts the substrate storage shelf in order to match the layer into which the substrate 100 is transferred or transferred out with the transfer position are provided. Thus, a plurality of substrates 100 can be temporarily accommodated and held in the buffer chamber 306.

[0084] The rotation chamber 307 is provided with a device that changes the orientation of the substrate 100. In the present embodiment, the rotation chamber 307 rotates the orientation of the substrate 100 by 180 degrees by a transfer robot provided in the rotation chamber 307. The transfer robot provided in the rotation chamber 307 exchanges the front end and the rear end of the substrate by rotating by 180 degrees in a state of supporting the substrate 100 received by the buffer chamber 306 and delivering to the handover chamber 308. Thus, the orientation of the substrate 100 when carried into the film formation chamber 303 becomes the same orientation in each film formation module 301, and therefore, it is possible to make the scanning direction with respect to the film formation of the substrate 100 and the orientation of the mask consistent in each film formation module 301. By providing such a structure, it is possible to make the orientation of the mask provided in the mask storage chamber 305 consistent in each film formation module 301, and it is possible to simplify the management of the mask and improve the availability.

[0085] The control system of the production line includes the upper device 300 that controls the entire production line as a host computer and the control devices 14a to 14d, 309, 310 that control each structure, which can communicate via a wired or wireless communication line 300a. The control devices 14a to 14d are provided corresponding to the film formation chambers 303a to 303d, and control the film formation device 1 described later. In addition, in the case of collectively referring to the control devices 14a to 14d or in the case of not distinguishing, it is written as the control device 14.

[0086] The control device 309 controls the transfer robot 302a. The control device 310 controls the devices of the rotation chamber 307. The upper device 300 transmits information related to the substrate 100, a carrying timing, and the like to each control device 14, 309, 310, and each control device 14, 309, 310 controls each structure based on the received instructions.

[0087] <Outline of Film Formation Device>

[0088] Figure 2FIG. 1 is a schematic view of a film formation apparatus 1 according to an embodiment of the present application. The film formation apparatus 1 is an apparatus that forms a film of an evaporation material on a substrate 100, and forms a thin film of the evaporation material in a predetermined pattern using a mask 101. The material of the substrate 100 on which the film formation is performed in the film formation apparatus 1 can be appropriately selected from a glass, a resin, a metal, or the like, and it is preferable to use a material on which a resin layer of polyimide or the like is formed on a glass. As the evaporation material, an organic material, an inorganic material (a metal, a metal oxide, or the like), or the like can be used. The film formation apparatus 1 can be applied to a manufacturing apparatus of an electronic device such as a display device (a flat panel display or the like), a thin film solar cell, an organic photoelectric conversion element (an organic thin film photographic element), or the like, an optical member, or the like, and in particular, to a manufacturing apparatus of an organic EL panel. In the following description, an example in which the film formation apparatus 1 performs the film formation on the substrate 100 by vacuum evaporation is described, but the present application is not limited thereto, and various film formation methods such as sputtering or CVD can be applied. In each drawing, an arrow Z indicates an up-down direction (a direction of gravity), and arrows X and Y indicate horizontal directions orthogonal to each other.

[0089] The film formation apparatus 1 has a box-shaped vacuum chamber 3. An inner space 3a of the vacuum chamber 3 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen. In the present embodiment, the vacuum chamber 3 is connected to a vacuum pump (a vacuum exhaust member) not shown. In the present specification, "vacuum" means a state in which a gas at a pressure lower than atmospheric pressure fills, in other words, a reduced pressure state. A substrate support unit 6 (a substrate support member) that supports the substrate 100 in a horizontal attitude, a mask stage 5 (a mask support member) that supports the mask 101, a film formation unit 4, and a plate unit 9 are arranged in the inner space 3a of the vacuum chamber 3. The mask 101 is a metal mask having an opening pattern corresponding to a thin film pattern to be formed on the substrate 100, and is fixed on the mask stage 5. As the mask 101, a mask having a configuration in which a mask foil having a thickness of several μm to several tens of μm is fixed by welding on a frame-shaped mask frame can be used. The material of the mask 101 is not particularly limited, but it is preferable to use a metal having a small coefficient of thermal expansion such as Invar. The film formation process is performed in a state in which the substrate 100 is placed on the mask 101 and the substrate 100 and the mask 101 are overlapped with each other.

[0090] The plate unit 9 has a cooling plate 10 and a magnet plate 11. The cooling plate 10 is suspended below the magnet plate 11 so as to be displaceable in the Z direction with respect to the magnet plate 11. The cooling plate 10 is a plate for contacting a surface (a back surface) on the opposite side of the film formation surface of the substrate 100 and sandwiching the substrate 100 between the mask 101 at the time of film formation. The cooling plate 10 has a function of cooling the substrate 100 by contacting the back surface of the substrate 100 at the time of film formation.

[0091] Further, the cooling plate 10 is not limited to one that actively cools the substrate 100 with a water cooling mechanism or the like, but can be one that does not have a water cooling mechanism or the like but takes heat from the substrate 100 by being in contact with the substrate 100. The cooling plate 10 can also be referred to as a press plate. The magnet plate 11 is a plate that attracts the mask 101 by magnetic force, is placed above the substrate 100, and improves the tightness of the substrate 100 and the mask 101 at the time of film formation. The film formation unit 4 is composed of a heater, a baffle, a drive mechanism of an evaporation source, an evaporation rate monitor, and the like, and is an evaporation source that evaporates a deposition material on the substrate 100. More specifically, in the present embodiment, the film formation unit 4 is a linear evaporation source in which a plurality of nozzles (not shown) are arranged in the X direction and a deposition material is discharged from each nozzle. The evaporation source is reciprocally moved in the Y direction (the depth direction of the device) by an evaporation source moving mechanism (not shown).

[0092] <Alignment Device>

[0093] The film formation device 1 has an alignment device 2 that performs alignment of the substrate 100 and the mask 101. The alignment device 2 has a substrate support unit 6 that supports the peripheral portion of the substrate 100. In addition to Figure 2 , it will be described with reference to Figure 3 . Figure 3 is a diagrammatic view of the substrate support unit 6, and is a perspective view thereof. The substrate support unit 6 has a rectangular frame-shaped base portion 60A and a plurality of claw-shaped placement portions 61 and 62 that protrude inward from the base portion 60A. Further, the placement portions 61 and 62 are sometimes referred to as "receiving claws" or "fingers". The plurality of placement portions 61 are arranged at intervals on the long side of the base portion 60A, and the plurality of placement portions 62 are arranged at intervals on the short side of the base portion 60A. The peripheral portion of the substrate 100 is placed on each of the placement portions 61 and 62. The base portion 60A is suspended from the beam member 222 via a plurality of support columns 64A.

[0094] Further, in the example of Figure 3 , the base portion 60A is a seamless rectangular frame shape that surrounds the outer periphery of the rectangular-shaped substrate 100, but is not limited thereto, and can be a rectangular frame shape in which a notch is partially present. By providing a notch in the base portion 60A, the handling robot 302a can be made to retreat by avoiding the base portion 60A when handing over the substrate 100 from the handling robot 302a to the placement portion 61 of the substrate support unit 6, and the efficiency of handling and handing over of the substrate 100 can be improved.

[0095] The substrate support unit 6 also has a clamping unit 63 (clamping section). The clamping unit 63 has a plurality of clamping sections 66. Each clamping section 66 is provided corresponding to each placement section 61, and can hold the substrate 100 with the clamping section 66 and the placement section 61 sandwiching the peripheral portion of the substrate 100. As a support form of the substrate 100, in addition to the form in which the peripheral portion of the substrate 100 is held with the clamping section 66 and the placement section 61 sandwiching the peripheral portion of the substrate 100 as such, a form in which the clamping section 66 is not provided and the substrate 100 is simply placed on the placement section 61 and the placement section 62 can also be adopted.

[0096] The clamping unit 63 also has a support member 65 that supports the plurality of clamping sections 66. The support member 65 is provided extending along the long side of the base section 60A. The support member 65 is coupled to the actuator 64B via a shaft R3. The shaft R3 extends upward from the support member 65 through an opening portion formed in the beam member 222 and an opening portion formed in the upper wall section 30 of the vacuum chamber 3. The actuator 64B is, for example, an electric cylinder, and by raising and lowering the support member 65, the clamping and clamping release of the peripheral portion of the substrate 100 based on the clamping section 66 and the placement section 61 are performed. The clamping unit 63 has two sets of the support member 65, the shaft R3, and the actuator 64B.

[0097] The alignment device 2 has a position adjustment unit 20 (position adjustment member) that adjusts the relative position of the mask 101 and the substrate 100 of which the peripheral portion is supported by the substrate support unit 6. In addition to Figure 2 , a description will be made with reference to Figure 4 . Figure 4 is a perspective view (partial perspective view) of the position adjustment unit 20. The position adjustment unit 20 adjusts the relative position of the substrate 100 with respect to the mask 101 by displacing the substrate support unit 6 in the X-Y plane. The position adjustment unit 20 can displace the substrate support unit 6 in the rotational direction around the axes in the X direction, the Y direction, and the Z direction. In the present embodiment, the relative position is adjusted by fixing the position of the mask 101 and displacing the substrate 100, but the adjustment can be performed by displacing the mask 101, or both the substrate 100 and the mask 101 can be displaced.

[0098] The position adjustment unit 20 has a fixed plate 20a, a movable plate 20b, and a plurality of actuators 201 disposed between these plates. The fixed plate 20a and the movable plate 20b are rectangular frame-shaped plates, and the fixed plate 20a is fixed to the upper wall section 30 of the vacuum chamber 3. In the case of the present embodiment, four actuators 201 are provided, and are located at the four corners of the fixed plate 20a.

[0099] Each of the actuators 201 includes a motor 2011 as a driving source, a slider 2013 movable along a guide 2012, a slider 2014 provided to the slider 2013, and a rotating body 2015 provided to the slider 2014. The driving force of the motor 2011 is transmitted to the slider 2013 via a transmission mechanism such as a ball screw mechanism, and the slider 2013 is moved along the linear guide 2012. The rotating body 2015 is supported to the slider 2014 so as to be freely movable in a direction orthogonal to the slider 2013. The rotating body 2015 has a fixed portion fixed to the slider 2014 and a rotating portion freely rotatable about an axis in the Z direction with respect to the fixed portion, and the movable plate 20b is supported to the rotating portion.

[0100] The moving directions of the sliders 2013 of the two actuators 201 located on the opposite corners of the fixed plate 20a among the four actuators 201 are the X direction, and the moving directions of the sliders 2013 of the remaining two actuators 201 are the Y direction. By the combination of the moving amounts of the sliders 2013 of the four actuators 201, the movable plate 20b is displaced in the rotational directions about the axes in the X, Y, and Z directions with respect to the fixed plate 20a. The displacement amount can be controlled, for example, in accordance with the detection result of a sensor such as a rotary encoder that detects the rotational amount of each motor 2011.

[0101] A frame-shaped stand 21 is mounted on the movable plate 20b, and a disengaging unit 22 (first lifting unit) and a second lifting unit 13 as disengaging members are supported to the stand 21. When the movable plate 20b is displaced, the stand 21, the disengaging unit 22, and the second lifting unit 13 are integrally displaced.

[0102] The disengaging unit 22 brings the mask 101 and the substrate 100 supported by the substrate supporting unit 6 in the thickness direction (Z direction) of the substrate 100 in close contact with each other and separates them from each other. In other words, the disengaging unit 22 can bring the substrate 100 and the mask 101 in close contact with each other in the direction of coincidence. In the present embodiment, since the disengaging unit 22 is a unit that lifts the substrate 100, it is also referred to as a "substrate lifting unit". As described above, the disengaging unit 22 is a unit that brings the mask 101 and the substrate 100 in close contact with each other in the direction of coincidence. Figure 2As shown, the approach-releasing unit 22 is provided with a first elevation plate 220. A guide rail 21a extending in the Z direction is formed in the side portion of the stand 21, and the first elevation plate 220 is freely elevatable in the Z direction along the guide rail 21a. The actuator 64B of the clamping unit 63 is supported to the first elevation plate 220. A beam member 222 of the substrate support unit 6 provided inside the vacuum chamber 3 is linked to the first elevation plate 220 provided outside the vacuum chamber 3 via a plurality of shafts R1, and is integrally elevated with the first elevation plate 220. The shafts R1 are upwardly extended from the beam member 222, and are linked to the first elevation plate 220 through the opening portion of the upper wall portion 30. Since the first elevation plate 220 is a plate that is integrally elevated with the substrate support unit 6 supporting the substrate 100, it is also referred to as a "substrate elevation plate".

[0103] The approach-releasing unit 22 is further provided with a drive unit 221 that supports the stand 21 and elevates the first elevation plate 220. The drive unit 221 is a mechanism that takes a motor 221a as a drive source and transmits the driving force thereof to the first elevation plate 220, and employs a ball screw mechanism having a ball screw shaft 221b and a ball nut 221c as a transmission mechanism in the present embodiment. The ball screw shaft 221b is extended in the Z direction, and is rotated about the shaft in the Z direction by the driving force of the motor 221a. The ball nut 221c is fixed to the first elevation plate 220, and is engaged with the ball screw shaft 221b. The first elevation plate 220 is elevatable in the Z direction by the rotation of the ball screw shaft 221b and the switching of the rotation direction thereof. For example, the elevation amount of the first elevation plate 220 can be controlled based on the detection result of a sensor such as a rotary encoder that detects the rotation amount of each motor 221a. Thus, the position in the Z direction of the placement portions 61 and 62 supporting the substrate 100 can be controlled, and the contact and separation of the substrate 100 and the mask 101 can be controlled.

[0104] The second elevation unit 13 elevates the plate unit 9 provided inside the vacuum chamber 3 by elevating the second elevation plate 12 provided outside the vacuum chamber 3. The plate unit 9 is linked to the second elevation plate 12 via a plurality of shafts R2. The shafts R2 are upwardly extended from the magnet plate 11, and are linked to the elevation plate 12 through the opening portion of the beam member 222, the opening portion of the upper wall portion 30, the opening portions of the fixed plate 20a and the movable plate 20b, and the opening portion of the elevation plate 220. The second elevation unit 13 is also referred to as a "cooling plate elevation unit" or a "magnet plate elevation unit", and the second elevation plate 12 is also referred to as a "cooling plate elevation plate" or a "magnet plate elevation plate".

[0105] The second elevation plate 12 is freely elevatable in the Z direction along the guide shaft 12a. The second elevation unit 13 has a drive mechanism that supports the second elevation plate 12 and elevates the second elevation plate 12. The drive mechanism of the second elevation unit 13 is a mechanism that uses a motor 13a as a drive source and transmits the drive force of the motor 13a to the second elevation plate 12, and in the present embodiment, a ball screw mechanism having a ball screw shaft 13b and a ball nut 13c is used as the transmission mechanism. The ball screw shaft 13b is disposed extending in the Z direction and rotates about the Z direction axis by the drive force of the motor 13a. The ball nut 13c is fixed to the second elevation plate 12 and engages with the ball screw shaft 13b. By the rotation of the ball screw shaft 13b and the switching of the rotation direction thereof, the second elevation plate 12 can be elevated in the Z direction. For example, the amount of elevation of the second elevation plate 12 can be controlled based on the detection results of sensors such as a rotary encoder that detects the amount of rotation of each motor 13a. Thus, the position of the plate unit 9 in the Z direction can be controlled, and the contact and separation of the plate unit 9 and the substrate 100 can be controlled.

[0106] The opening of the upper wall portion 30 through which each of the shafts R1 to R3 passes has a size that allows each of the shafts R1 to R3 to displace in the X direction and the Y direction. In order to maintain the air tightness of the vacuum chamber 3, the opening of the upper wall portion 30 through which each of the shafts R1 to R3 passes is covered by a bellows or the like.

[0107] The alignment device 2 has a measurement unit (first measurement unit 7 and second measurement unit 8 (measurement means)) that measures the positional displacement of the mask 101 and the substrate 100 supported by the substrate support unit 6. In addition to Figure 2 , the following will be described. Figure 5 Figure 5 is a diagram illustrating the measurement of the positional displacement of the substrate 100 and the mask 101. The first measurement unit 7 and the second measurement unit 8 of the present embodiment are each a camera that captures an image. The first measurement unit 7 and the second measurement unit 8 are disposed above the upper wall portion 30 and can capture an image of the vacuum chamber 3 through a window (not shown) formed in the upper wall portion 30.

[0108] The substrate 100 is formed with a substrate coarse alignment mark 100a and a substrate fine alignment mark 100b, and the mask 101 is formed with a mask coarse alignment mark 101a and a mask fine mark 101b. Hereinafter, the substrate coarse alignment mark 100a will be referred to as the substrate coarse mark 100a, the substrate fine alignment mark 100b will be referred to as the substrate fine mark 100b, and both will be referred to as the substrate marks. In addition, the mask coarse alignment mark 101a will be referred to as the mask coarse mark 101a, the mask fine alignment mark 101b will be referred to as the mask fine mark 101b, and both will be referred to as the mask marks.​

[0109] The substrate rough marks 100a are formed in the short side central portions of the substrate 100. The substrate fine marks 100b are formed in the four corners of the substrate 100. The mask rough marks 101a are formed in the short side central portions of the mask 101 in correspondence with the substrate rough marks 100a. In addition, the mask fine marks 101b are formed in the four corners of the mask 101 in correspondence with the substrate fine marks 101b.

[0110] The second measurement units 8 are provided four in order to photograph each group (four groups in this embodiment) of the corresponding substrate fine marks 100b and mask fine marks 101b. The second measurement units 8 are high magnification CCD cameras (fine cameras) having a relatively narrow field of view but high resolution (for example, on the order of several μm), and measure the positional displacement amount of the substrate 100 and mask 101 with high accuracy. The first measurement unit 7 is provided one, and photographs each group (two groups in this embodiment) of the corresponding substrate rough marks 100a and mask rough marks 101a.

[0111] The first measurement unit 7 is a low magnification CCD camera (rough camera) having a relatively wide field of view but low resolution, and measures the approximate positional displacement amount of the substrate 100 and mask 101. In this embodiment, the first measurement unit 7 is provided one, but the number of the first measurement units 7 is not limited to one. For example, two first measurement units 7 can be provided in order to photograph each group of the substrate rough marks 100a and mask rough marks 101a. Figure 5 In the example of FIG. 1, a structure in which one first measurement unit 7 photographs both groups of the substrate rough marks 100a and mask rough marks 101a is shown, but is not limited thereto. As with the second measurement units 8, two first measurement units 7 can be provided in positions corresponding to each group in order to photograph each group of the substrate rough marks 100a and mask rough marks 101a, respectively.

[0112] In this embodiment, after the positional adjustment (first alignment) of the substrate 100 and mask 101 based on the measurement result of the first measurement unit 7, the fine positional adjustment (second alignment) of the substrate 100 and mask 101 is performed based on the measurement result of the second measurement unit 8.

[0113] Here, in order to improve the accuracy of the positional adjustment based on the alignment, it is required to improve the detection accuracy of each mark by the measurement unit. Therefore, as the second measurement unit 8 (fine camera) used in the second alignment (fine alignment) which requires high accuracy of the positional adjustment, it is preferable to use a camera capable of taking an image with high resolution. However, when the resolution of the camera is increased, the depth of field becomes shallower, and therefore, in order to photograph the marks formed on the substrate 100 and the marks formed on the mask 101 which become the photographing targets at the same time, it is required to further bring the two marks closer in the optical axis direction of the second measurement unit 8.

[0114] Therefore, in the present embodiment, when the substrate fine marks 100b and the mask fine marks 101b are detected in the second alignment, the substrate 100 and the mask 101 are brought close to a position where the substrate 100 locally contacts the mask 101. Since the peripheral portion of the substrate 100 is supported, the central portion is in a state of being deflected by the weight, and thus, typically, the central portion of the substrate 100 locally contacts the mask 101.

[0115] Further, in the first alignment (rough alignment), the detection of the substrate rough marks 100a and the mask rough marks 101a and the adjustment of the positions of the substrate 100 and the mask 101 are performed in a state where the substrate 100 and the mask 101 are separated. In the first alignment, the first measurement unit 7 (rough camera) having a deep depth of field is used, and thus, the alignment can be performed in a state where the substrate 100 and the mask 101 are separated. In the present embodiment, as such, by the first alignment, the adjustment of the positions is roughly performed in a state where the substrate 100 and the mask 101 are separated, and then, the second alignment in which the adjustment of the positions is performed with higher accuracy is performed.

[0116] Thus, in the second alignment, when the substrate 100 and the mask 101 are brought close and contact each other for the detection of the marks, since the relative positions of the substrate 100 and the mask 101 have been adjusted to some extent, the pattern of the film formed on the substrate 100 and the opening pattern of the mask 101 contact each other in a state where they are aligned to some extent. Therefore, it is possible to reduce the damage to the film formed on the substrate 100 caused by the contact of the substrate 100 and the mask 101.

[0117] That is, by combining and performing the first alignment in which the adjustment of the positions is roughly performed in a state where the substrate 100 and the mask 101 are separated and the second alignment including the process in which the substrate 100 and the mask 101 locally contact each other as in the present embodiment, it is possible to reduce the damage to the film formed on the substrate 100 and achieve high-accuracy adjustment of the positions. Details of the first alignment and the second alignment will be described later.

[0118] The control device 14 controls the entire film formation device 1. The control device 14 includes a processing section (control means) 141, a storage section 142, an input / output interface (I / O) 143, and a communication section 144. The processing section 141 is a processor typified by a CPU, and controls the film formation device 1 by executing a program stored in the storage section 142. The storage section 142 is a memory device (storage means) such as a ROM, a RAM, and a HDD, and stores various control information in addition to the program executed by the processing section 141. The I / O 143 is an interface that transmits and receives signals between the processing section 141 and external devices. The communication section 144 is a communication device that communicates with the upper-level device 300 or other control devices 14, 309, 310, and the like via the communication line 300a, and the processing section 141 receives and transmits information to and from the upper-level device 300 via the communication section 144. Note that all or a part of the control devices 14, 309, 310, and the upper-level device 300 can be constituted by a PLC, an ASIC, and an FPGA.

[0119] <Substrate>

[0120] The substrate 100 of the present embodiment is a cut substrate cut out from a large substrate. In other words, the substrate 100 is any one of a plurality of substrates obtained by dividing a large substrate. Figure 6 FIG. 1 is a view showing an example of a large substrate and a cut substrate. The large substrate MG is a mother glass of the sixth generation full size (about 1500 mm x about 1850 mm), and has a rectangular shape. An orientation flat OF for determining the orientation of the large substrate MG is formed at a corner portion of a part of the large substrate MG.

[0121] Note that, here, an example in which the orientation flat OF is formed by cutting only one of the four corner portions of the large substrate MG is shown, but the present embodiment is not limited thereto. The orientation flat OF can be formed by cutting all of the four corner portions, but cutting one of the corner portions more than the other corner portions. In this case, a portion cut into a different shape from the other corner portions can be understood as the orientation flat OF.

[0122] As described above, in the manufacture of an organic EL display for a smartphone, for example, a sixth-generation full-size large substrate MG is subjected to film formation processing and the like in a back plate process (TFT formation process, anode formation process, and the like). Thereafter, the large substrate MG is cut in half (cutting process), and the sixth-generation half-cut-size (about 1500 mm x about 925 mm) substrate 100 obtained by the cutting is carried into a film formation module 301 in the production line of the present embodiment in which the film formation of an organic layer is performed. The substrate 100 carried into the film formation module 301 is either one of two divided substrates obtained by cutting the large substrate MG, and is the substrate 100A or the substrate 100B in the present embodiment. For the large substrate MG, the large substrate MG is cut by a cutting line CTL at a position at a distance L from a reference edge that is one edge thereof, thereby obtaining the substrate 100A and the substrate 100B. In the present embodiment, the substrate 100A and the substrate 100B are carried as the substrate 100, and various processes are performed. Figure 1 In the illustrated production line, the substrate 100A and the substrate 100B exist mixed, are carried as the substrate 100, and various processes are performed.

[0123] Further, here, it is assumed that the large substrate MG is cut in half, but it is not limited thereto, and the large substrate MG can be cut to divide it into a plurality of substrates of substantially the same size. For example, the large substrate MG can be divided into four to provide four substrates 100, which are carried into the film formation module 301.

[0124] There are cases in which the characteristics of the substrate 100A and the substrate 100B differ. For example, the substrate 100A is a substrate in which the length of the short side is trimmed to L, but the length of the short side of the substrate 100B is not trimmed, and in the substrate 100A and the substrate 100B, there are cases in which the lengths of the short sides differ. Further, the substrate 100B has the orientation flat OF, but the substrate 100A does not have the orientation flat OF. There are also cases in which the magnitude of the residual stress in the cut surface differs between the substrate 100A and the substrate 100B. Further, the position of the cut surface differs between the substrate 100A and the substrate 100B.

[0125] Such differences in the characteristics of the substrate sometimes affect the behavior of the substrate 100 at the time of alignment. Figure 7 (A) and Figure 7 (B) is a diagram for explaining the same. Figure 7 (A) illustrates the deflection of the substrate 100 supported by the substrate support unit 6 downward. The central portion of the substrate 100 supported at the peripheral portion is deflected downward due to the weight. Depending on the difference in the characteristics of the substrate 100, there are cases in which the deflection amount H differs. In the case in which the substrate 100 is brought into contact with the mask 101 or in the case in which the substrate 100 is overlapped with the mask 101, the difference in the deflection amount H can affect the amount of shift in the position of the substrate 100. With respect to theFigure 7 (A) different substrates 100, Figure 7 (B) illustrates the position where the deflection of the substrate 100 becomes the maximum amount. If the rigidity distribution of the substrate 100 is uniform, the position W1 where the deflection becomes the maximum amount with respect to the width W0 of the substrate 100 (the position of one side edge is set to 0 and the position of the other side edge is set to W0) is W1 = 1 / 2 - W0 as shown in (A), but if there is a deviation in the rigidity distribution, it is W1 ≠ 1 / 2 - W0 as in the example shown. In the case where the substrate 100 is brought into contact with the mask 101 or in the case where the substrate 100 is overlapped with the mask 101, the difference in the position where the deflection becomes the maximum amount can also affect the positional shift of the substrate 100. Figure 7

[0126] Therefore, in the present embodiment, as explained below, alignment control corresponding to the position of the large substrate MG from which the substrate 100 is cut out is performed.

[0127] <Control Example>

[0128] A control example of the film formation apparatus 1 performed by the processing section 141 of the control device 14 is explained. Figure 8 and Figure 9 is a flowchart showing a processing example of the processing section 141, Figures 10-14 is an action explanatory diagram of the alignment device 2.

[0129] In step S1, the processing section 141 acquires the substrate information of the substrate 100 to be processed next (acquisition process). The substrate information includes the position information of the substrate 100 related to the position of the large substrate MG from which the substrate 100 is cut out (substrate 100A or substrate 100B in the present embodiment). In other words, this information is information related to the relative position in the large substrate MG before being divided, and is also called "cut-out information" or "cutting information". As such, the processing section 141 has a function as an acquisition section that acquires information related to the position from which the substrate 100 is cut out from the large substrate MG.

[0130] ​In the case of the present embodiment, the substrate information is managed by the host device 300. The host device 300 stores substrate information in which the identification information of each substrate 100 is associated with the site information (substrate 100A or substrate 100B) of the substrate 100. Also, in the case where the host device 300 instructs the processing of the substrate 100 to the control device 14 or the like, the substrate information is transmitted to the control device 14 or the like as the destination of the instruction. In step S1, the processing section 141 acquires the substrate information by receiving the substrate information from the host device 300 via the communication section 144. Note that the host device 300 can acquire the substrate information from a cutting device (substrate dividing device) that cuts the large substrate MG, another device disposed in the production line on the upstream side of the film formation device 1, or a device outside the production line, for example, or can acquire the substrate information by input from an operator of the production line.

[0131] In step S2, the substrate 100 is carried into the vacuum chamber 3 by the carrying robot 302a, and the substrate 100 is supported by the substrate support unit 6. The substrate 100 is supported by the substrate support unit 6 above the mask 101, and is maintained in a state separated from the mask 101. The alignment of the substrate 100 and the mask 101 is performed in steps S2 and S3.

[0132] In step S3, the first alignment is performed. Here, based on the measurement result of the first measurement unit 7, the approximate position adjustment of the substrate 100 and the mask 101 is performed. Figure 10 (A) Figure 10 (C) schematically shows the alignment action of step S3. Figure 10 (A) shows a state in which the substrate rough mark 100a and the mask rough mark 101a are measured by the first measurement unit 7. The peripheral portion of the substrate 100 is placed on the placement sections 61 and 62, and is clamped between the placement section 61 and the clamping section 66. The central portion of the substrate 100 is deflected downward due to the weight. The board unit 9 is waiting above the substrate 100.

[0133] The relative positions of the substrate coarse mark 100a and the mask coarse mark 101a are measured using the first measuring unit 7. If the measurement result (positional offset between substrate 100 and mask 101) is within the allowable range, the first alignment is completed. If the measurement result is outside the allowable range, a control quantity (displacement of substrate 100) is set based on the measurement result to bring the positional offset within the allowable range. Furthermore, in the following description, "positional offset" includes not only the amount of positional offset itself but also the direction of positional offset. The amount of positional offset referred to here is the distance between substrate 100 and mask 101 in the projection diagram (vertical projection) obtained by projecting substrate 100 and mask 101 relative to the same plane in the Z direction; it refers to the so-called horizontal distance. The position adjustment unit 20 is activated based on the set control quantity. Thus, as... Figure 10 As shown in (B), the substrate support unit 6 is displaced in the XY plane to adjust the relative position of the substrate 100 with respect to the mask 101.

[0134] For example, it is possible to determine whether the measurement result is within the acceptable range by calculating the distance between the corresponding substrate rough mark 100a and the mask rough mark 101a, and comparing the average or sum of squares of these distances with a preset threshold. Alternatively, similar to the second alignment case described later, it is also possible to calculate the ideal position (mask rough mark target position) of each mask rough mark 101a for aligning the substrate 100 and the mask 101 based on the substrate rough mark 100a corresponding to each mask rough mark 101a. Furthermore, it is also possible to determine whether the measurement result is within the acceptable range by calculating the distance between the corresponding mask rough mark 101a and the mask rough mark target position, and comparing the average or sum of squares of these distances with a preset threshold.

[0135] After adjusting the relative positions, such as Figure 10 As shown in (C), the relative positions of the substrate coarse mark 100a and the mask coarse mark 101a are measured again using the first measuring unit 7. If the measurement result is within the acceptable range, the first alignment ends. If the measurement result is outside the acceptable range, the relative position of the substrate 100 relative to the mask 101 is adjusted again. Thereafter, the measurement and relative position adjustment are repeated until the measurement result is within the acceptable range. During the first alignment, the substrate 100 is always separated from the mask 101 from above. Therefore, the substrate 100 is maintained in a state separated from the mask 101 until the initial second alignment is performed (described later).

[0136] At the end of the first alignment, Figure 8 In step S4, a second alignment is performed. Here, based on the measurement results of the second measuring unit 8, precise positional adjustment is made between the substrate 100 and the mask 101. Details will be described later.

[0137] At the end of the second alignment, in Figure 8 Step S5, the process of placing the substrate 100 on the mask 101 is performed. Here, the driving units 221 are driven and the substrate support unit 6 is lowered, and the control of aligning the substrate 100 with the mask 101 is performed as shown in Figure 13 (A). Specifically, the substrate support unit 6 is lowered so that the heights of the upper surfaces (substrate support surfaces) of the placement portions 61 and 62 of the substrate support unit 6 become identical to the height of the upper surface of the mask 101. Thus, the substrate 100 is placed on the mask 101, and becomes a state of being supported by the substrate support unit 6 and the mask 101. In this state, the entire treated surface of the substrate 100 is in contact with the mask 101.

[0138] Next, the second lifting unit 13 is driven and the plate unit 9 is lowered, and the cooling plate 10 is brought into contact with the substrate 100 as shown in Figure 13 (B). Thereafter, the second lifting unit 13 is driven, and the magnet plate 11 is lowered with respect to the cooling plate 10 in a state of maintaining the height of the cooling plate 10, and the magnet plate 11 is brought close to the substrate 100 and the mask 101 as shown in Figure 10 (C). By bringing the magnet plate 11 close to the mask 101, the mask 101 can be brought into close contact with the substrate 100 by attracting the mask 101 with the magnetic force of the magnet plate 11.

[0139] In Step S6 of Figure 8 , the clamping of the peripheral portion of the substrate 100 is released, and the final measurement (also referred to as "pre-deposition measurement") based on the second measurement unit 8 is performed. In the release of the clamping, the clamping portion 66 is raised from the peripheral portion of the substrate 100 by the driving of the actuator 64B as shown in Figure 14 (A). Thereafter, the substrate support unit 6 can be further lowered to separate the substrate support unit 6 from the substrate. Thus, a state in which the substrate 100 is in contact with only the mask 101 and the cooling plate 10 can be achieved. In the final measurement, the positional displacement amount of the substrate 100 and the mask 101 is measured by the second measurement unit 8. Figure 14 (B) shows a state when the substrate fine marks 100b and the mask fine marks 101b are measured by the second measurement unit 8. Four sets of the relative positions of the substrate fine marks 100b and the mask fine marks 101b are measured by the four second measurement units 8.

[0140] In Step S7, based on the result of the pre-deposition measurement of Step S6, the update process of the close contact action displacement correction information (mechanical offset amount) for correcting the target position of the control in the second alignment is performed (close contact action displacement correction information update process). Details will be described later.

[0141] In step S8, it is determined whether the measurement result of the final measurement in step S6 (the positional displacement amount of the substrate 100 and the mask 101) is within the allowable range. If it is within the allowable range, it proceeds to step S9, and if it is outside the allowable range, it returns to step S4 and the second alignment is performed again. At the time of returning to step S4, the following actions are required: the peripheral portion of the substrate 100 is clamped again, the plate unit 9 is raised to be separated from the substrate 100, and the substrate 100 is raised. Further, the determination of whether the measurement result is within the allowable range can be performed similarly to step S3, step S4 (however, the close action displacement correction of step S13 described later is not reflected).

[0142] In Figure 8 In step S9, the film formation processing is performed. Here, using the film formation unit 4, a thin film is formed on the lower surface of the substrate 100 via the mask 101. At the end of the film formation processing, in step S10, the substrate 100 is carried out from the vacuum chamber 3 using the carrying robot 302a. By the above steps, the processing is ended.

[0143] <Second alignment>

[0144] The processing of the second alignment of step S4 is described. Figure 9 is a flowchart showing the processing of the second alignment of step S4. The second alignment is processing in which the measurement / position adjustment action including the measurement action (steps S11, S12, S19, S20) and the position adjustment action (steps S15-S18) are repeated until the measurement result in the measurement action becomes within the allowable range.

[0145] In step S11, the close action of bringing the substrate 100 and the mask 101 close in the thickness direction (Z direction) of the substrate 100 is performed. Here, the driving unit 221 is driven and the substrate support unit 6 is lowered, and the substrate 100 and the mask 101 are brought into partial contact.

[0146] Figure 11 (A) shows an example of the close action. The substrate 100 is lowered to the height at which the central portion that is deflected downward comes into contact with the mask 101. The portions other than the central portion of the substrate 100 are separated from the mask 101. By bringing the substrate 100 and the mask 101 close to the substrate 100 and the mask 101 being in partial contact, it is possible to simultaneously capture the substrate fine mark 100b formed on the substrate 100 and the mask fine mark 101b formed on the mask 101 using the second measurement unit having a shallow depth of field and measure the positional displacement amount.

[0147] Further, by bringing the substrate 100 and the mask 101 into partial contact at the time of measurement, it is possible to suppress the thin film already formed on the substrate 100 from being damaged due to contact with the mask 101 as much as possible.

[0148] In Figure 9 Step S12, the positional displacement between the locally contacted substrate 100 and mask 101 is measured by the second measurement unit 8. Figure 11 (B) shows the state when the substrate fine marks 100b and mask fine marks 101b are measured by the second measurement unit 8. Four second measurement units 8 are used to measure the relative positions of four sets of substrate fine marks 100b and mask fine marks 101b. In this embodiment, based on the measurement results of the substrate fine marks 100b measured by the second measurement unit 8, the target positions of the four mask fine marks 101b corresponding to the four substrate fine marks 100b, respectively, are calculated (mask fine mark target positions). Here, the mask fine mark target positions are set as ideal positions where each mask fine mark 101b should be located in order to align the substrate 100 and mask 101, and can be calculated based on the design dimensions of the positions of the marks.

[0149] In Figure 9 Step S13, the measurement result is corrected for the close contact action displacement. As Figure 8 indicated in (A), when the second alignment of Step S4 is completed, a plurality of mechanical actions (hereinafter collectively referred to as close contact actions) such as a placement action of placing the substrate 100 on the mask 101, a cooling plate close contact action of lowering the cooling plate 10 and bringing it into close contact with the back surface side of the film formation surface of the substrate 100, a mask close contact action of lowering the magnet plate 11 and attracting the mask 101 to bring it into close contact with the film formation surface of the substrate 100, and a chuck release action of releasing the chucking of the periphery of the substrate 100, which involve physical contact, are performed (S5, S6). Due to this close contact action, the relative position between the substrate 100 and mask 101 sometimes shifts from the state at the last measurement of the second alignment to the pre-film formation measurement of Step S6.

[0150] If this shift is not taken into account, even if it is within the allowable range (alignment OK) in the last measurement of the second alignment, it sometimes becomes outside the allowable range (alignment NG) in the pre-film formation measurement. If it becomes outside the allowable range in the pre-film formation measurement, the second alignment is performed again after various actions such as the chucking action based on the chucking portion 66, the raising action of the magnet plate 11, the raising action of the cooling plate 10, and the raising action of the substrate 100 are all performed, and therefore, the production cycle time is greatly increased. As a result, the production rate is greatly reduced.

[0151] Therefore, in the present embodiment, the measurement result of step S12 is subjected to the close contact operation offset correction in step S13. Specifically, close contact operation offset correction information 142a for offsetting the amount of offset of the substrate 100 due to the close contact operation is stored in advance in the storage section 142. Also, the mask fine mark target position calculated in step S12 is corrected using the close contact operation offset correction information 142b. That is, as a result of the second alignment, the mask fine mark target position is corrected in advance so as to become a state in which the substrate 100 is positioned at a position that is offset in advance in the opposite direction by an amount predicted to be offset due to the close contact operation. Thereby, it is possible to make the result of the determination in step S14 close to the result of the determination in step S8 after the close contact operation is performed. In other words, it is possible to incorporate the offset due to the close contact operation and evaluate the positional offset amount in step S14. Thereby, it is possible to suppress the re-performance of the second alignment due to the positional offset at the time of the close contact operation. Furthermore, in this case, an example in which the mask fine mark target position is corrected in the close contact operation offset correction is described, but it is not limited thereto, and it is also possible to directly correct the position of the substrate fine mark 100b and the position of the mask fine mark 101b, which are the measurement results of step S12.

[0152] It is possible to store the amount of offset of the substrate 100 due to the close contact operation in advance in the storage section 142 based on the result of the pre-film formation measurement when another substrate processed before the substrate 100 to be processed next is processed. That is, in the update processing of step S7 of the above-described embodiment, the amount of offset of the substrate 100 due to the close contact operation is updated based on the result of the pre-film formation measurement when another substrate processed before the substrate 100 to be processed next is processed. Figure 8 It is more preferable to be stored in advance in the storage section 142 based on the result of the pre-film formation measurement when a plurality of other substrates processed before the substrate 100 to be processed. For example, by averaging the results of the pre-film formation measurement of the most recent plurality of substrates by employing a moving average and using, it is also possible to cope with the variation of the offset due to the change of the environment and the change of the device over time, and it is possible to maintain the alignment accuracy.

[0153] Furthermore, in the substrate 100A and the substrate 100B, the amount of offset and the tendency of the direction of offset of the position of the substrate 100 at the time of the close contact operation are different. That is, depending on which part of the large substrate MG the substrate 100 is cut out from, the amount of offset and the tendency of the direction of offset are different. Therefore, in the present embodiment, the close contact operation offset correction information 142a is stored in advance in the storage section 142 in association with the substrate information. Thereby, it is possible to perform the relative position adjustment taking into account the behavior of the substrate 100 due to the cut-out part.

[0154] In the above-described embodiment, the amount of offset of the substrate 100 due to the close contact operation is stored in advance in the storage section 142 based on the result of the pre-film formation measurement when another substrate processed before the substrate 100 to be processed next is processed. Figure 9In step S14, it is determined whether the measurement result of step S12 (the positional displacement amount of the substrate 100 and the mask 101) is within the allowable range. Here, for example, the distance between the mask fine mark target position calculated in step S12 and corrected in step S13 and the position of the mask fine mark 101b is calculated for each of the four sets of the substrate fine mark 100b and the mask fine mark 101b. Then, the average or the sum of squares of the calculated distances is compared with a threshold value set in advance, and if the distance is equal to or less than the threshold value, it is determined to be within the allowable range, and if the distance exceeds the threshold value, it is determined to be outside the allowable range. If the determination result of step S14 is within the allowable range, the second alignment is ended, and if it is outside the allowable range, the process proceeds to step S15.

[0155] In step S15, a separation operation of separating the substrate 100 and the mask 101 in the thickness direction (Z direction) of the substrate 100 is performed. Here, the driving unit 221 is driven and the substrate support unit 6 is raised to separate the substrate 100 and the mask 101. Figure 11 (C) shows an example of the separation operation. The substrate 100 is raised to a height at which the central portion that is bent downward does not contact the mask 101. The substrate 100 is separated from the mask 101, and the substrate 100 does not contact the mask 101. By separating the substrate 100 and the mask 101, it is possible to avoid the thin film formed on the substrate 100 from being damaged by the deposition region of the substrate 100 rubbing against the mask 101 in the position adjustment operation of step S17.

[0156] In steps S16 and S17, processes related to the setting of the control amount of the position adjustment unit 20 are performed. First, in step S16, a control amount based on the measurement result of step S12 corrected in step S13 is set. In this setting, a basic control amount (the displacement amount of the substrate 100) for converging the positional displacement of the substrate 100 and the mask 101 within the allowable range is set. For example, the amount and the direction of the positional displacement of the substrate 100 and the mask 101 with respect to the allowable range are determined, and the control amount is set in such a manner that the substrate 100 is displaced in the opposite direction to the determined direction by the determined amount. For example, the amount and the direction of the positional displacement of the substrate 100 and the mask 101 can be calculated from the mask fine mark target position calculated in step S12 and corrected in step S13 and the position of the mask fine mark 101b measured in step S12.

[0157] Next, in step S17, the position adjustment operation of the position adjustment unit 20 is performed based on the control amount set in step S16. Figure 8The substrate information obtained in step S16 is used to correct the control quantity set in step S16. In this embodiment, the stage drive correction information 142b, which corresponds to the substrate information, is referenced in the storage unit 142. The stage drive correction information 142b is control information used to counteract the alignment effect of the substrate 100 caused by the cutting portion of the substrate 100. The storage unit 142 stores multiple stage drive correction information 142b corresponding to the number of substrates 100 cut from a large substrate MG (i.e., the number of cuts).

[0158] Furthermore, the stage drive correction information 142b is stored according to the number of position adjustment actions (S18). In other words, the stage drive correction information 142b is stored in correspondence with the substrate information containing part information related to the part from which the large substrate MG is cut from the substrate 100 and the number of position adjustment actions. In this embodiment, the number of divisions is two, and for the stage drive correction information 142b, the correction information corresponding to substrate information A (substrate 100A) and the correction information corresponding to substrate information B (substrate 100B) are respectively stored in the storage unit 142 in a correspondence with the number of position adjustment actions (S18).

[0159] Processing unit 141 reads the data in step S1 ( Figure 8 The control quantity set in step S16 is corrected using the substrate information obtained from the [database name] and the correction information 142b corresponding to the number of position adjustment operations. For the information on the number of position adjustment operations, it can be stored in the storage unit 142 by resetting the count to "1" after the second alignment begins and incrementing the count by 1 each time a position adjustment operation S18 (described later) is performed. This allows for different relative position adjustments that take into account the movement of the substrate 100 caused by the cutting position and the number of position adjustment operations.

[0160] In this embodiment, the table drive correction information 142b is a correction amount (deviation) added to or subtracted from the basic control amount. The final control amount is set by control amount = basic control amount + deviation amount. Alternatively, the table drive correction information 142b may be a coefficient multiplied by the basic control amount. In this case, the final control amount is set by control amount = correction coefficient × basic control amount. The table drive correction information 142b can be set through prior testing, etc.

[0161] exist Figure 9 In step S18, the position adjustment unit 20 is driven according to the control values ​​set in steps S16 and S17 to perform a position adjustment operation on the relative position of the substrate 100 and the mask 101. Thus, as... Figure 12(A), the substrate support unit 6 is displaced in the X-Y plane, adjusting the relative position of the substrate 100 with respect to the mask 101.

[0162] At the end of the processing of step S18, the same processing as steps Sll and S12 is performed in steps S19 and S20. That is, after the position adjustment operation of (A), as shown in Figure 12 Figure 12 (B), the approach operation (step S19) is performed again, and the substrate 100 is lowered to a height at which the central portion of the substrate 100 contacts the mask 101. Next, as shown in Figure 12 (C), the measurement (step S20) is performed again, and the positional displacement of the locally contacting substrate 100 and mask 101 is measured.

[0163] In step S21, based on the measurement result of step S20, the worktable drive correction amount 142b corresponding to the number of times of the present position adjustment operation is updated. For example, based on the result of the measurement operation (step S20) after the first position adjustment operation (S18) is performed, the correction amount of the first position adjustment operation stored in the worktable drive correction information 142b of the storage section 142 is updated. By updating the worktable drive correction amount 142a at all times in this way, changes in the environment and changes in the device over time can be dealt with, and the position adjustment accuracy of the substrate to be processed thereafter can be maintained. Further, the update processing of step S21 can not necessarily be performed each time.

[0164] After the processing of step S21, the processing returns to step S13 and the same processing is repeated. The measurement result of step S20 is subjected to the close contact operation displacement correction of step S13.

[0165] As described above, in the present embodiment, in step S17, the control amount is corrected in accordance with the cutout portion (substrates 100A, 100B) of the substrate 100 in the large substrate MG and the number of times of the position adjustment operation (S18). Thereby, control that offsets the difference in the behavior of the substrate 100 at the time of alignment caused by the cutout portion and the number of times of the position adjustment operation can be performed. As a result, with respect to the alignment of the substrate 100, the deviation in the alignment accuracy and time caused by the difference in the cutout portion can be suppressed.

[0166] ​This contributes to high-precision and shorter-time second alignment. Specifically, when the substrate 100 is in partial contact with the mask 101, the central portion of the substrate 100 that is bent downward is subjected to a reaction force from the mask 101 toward the upper side. Due to this reaction force, the substrate 100 is deformed in a manner to expand toward the outside, and the support position of the substrate support unit 6 that supports the peripheral portion of the substrate 100 is slightly shifted. Although the peripheral portion of the substrate 100 is sandwiched by the clamping portion 66 and the placement portion 61, in a case where the force with which the peripheral portion of the substrate 100 tends to expand toward the outside is greater than the frictional force generated between the clamping portion 66, the placement portion 61, and the substrate 100, sliding occurs and the support position is shifted. In particular, in a case where the clamping portion 66 is composed of a resin such as PEEK (polyether ether ketone resin), the shift of the support position that accompanies the elimination of the bending of the substrate 100 at the time of partial contact in the measurement operation is likely to occur. At this time, there are cases where the difference in characteristics between the substrate 100A and the substrate 100B is significantly exhibited.

[0167] In the present embodiment, since the difference in characteristics between the substrate 100A and the substrate 100B is incorporated into the control amount by correction, it is possible to suppress the shift in alignment precision and time caused by the difference in cutout position.

[0168] <Method for manufacturing electronic device>

[0169] Next, an example of a method for manufacturing an electronic device will be described. Hereinafter, as an example of an electronic device, the structure and the manufacturing method of an organic EL display device will be exemplified. In the example, Figure 1 The exemplified film formation module 301 is provided, for example, at three places on a production line.

[0170] First, an organic EL display device to be manufactured will be described. Figure 15 (A) is a general view showing an organic EL display device 50, Figure 15 (B) is a view showing the cross-sectional structure of one pixel.

[0171] As shown in Figure 15 (A), a plurality of pixels 52 each having a plurality of light emitting elements are arranged in a matrix in a display region 51 of the organic EL display device 50. Details will be described later, but the light emitting elements each have a structure having an organic layer sandwiched by a pair of electrodes.

[0172] Further, the pixel herein refers to a minimum unit capable of displaying a desired color in the display region 51. In the case of a color organic EL display device, the pixel 52 is configured by a combination of a plurality of sub-pixels of the first light emitting element 52R, the second light emitting element 52G, and the third light emitting element 52B that emit light different from each other. The pixel 52 is generally configured by a combination of three sub-pixels of a red (R) light emitting element, a green (G) light emitting element, and a blue (B) light emitting element, but is not limited thereto. The pixel 52 can include at least one sub-pixel, preferably two or more sub-pixels, and more preferably three or more sub-pixels. As the sub-pixels configuring the pixel 52, for example, a combination of four sub-pixels of a red (R) light emitting element, a green (G) light emitting element, a blue (B) light emitting element, and a yellow (Y) light emitting element can be used.

[0173] Figure 15 (B) is Figure 15 (A) is a schematic view of a partial cross section at the A-B line. The pixel 52 has a plurality of sub-pixels on the substrate 53, which are configured by organic EL elements having a first electrode (anode) 54, a hole transporting layer 55, any one of a red layer 56R, a green layer 56G, and a blue layer 56B, an electron transporting layer 57, and a second electrode (cathode) 58. The hole transporting layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transporting layer 57 correspond to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed as patterns corresponding to light emitting elements (sometimes referred to as organic EL elements) that emit red light, green light, and blue light, respectively.

[0174] Further, the first electrode 54 is formed separately for each light emitting element. The hole transporting layer 55, the electron transporting layer 57, and the second electrode 58 can be formed commonly for the plurality of light emitting elements 52R, 52G, and 52B, or can be formed for each light emitting element. That is, as shown in (B), the red layer 56R, the green layer 56G, and the blue layer 56B can be formed separately for each sub-pixel region on the basis of the hole transporting layer 55 being formed as a common layer for the plurality of sub-pixel regions, and further the electron transporting layer 57 and the second electrode 58 can be formed as a common layer for the plurality of sub-pixel regions thereon. Figure 15

[0175] Further, in order to prevent short-circuiting between the first electrodes 54 in close proximity, an insulating layer 59 is provided between the first electrodes 54. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 60B for protecting the organic EL element from the moisture and the oxygen is provided.

[0176] In Figure 15 ​In (B), the hole-transport layer 55 and the electron-transport layer 57 are represented by one layer, but depending on the configuration of the organic EL display element, they can be formed by a plurality of layers including a hole-blocking layer and an electron-blocking layer. Also, a hole-injection layer having a band structure that enables smooth injection of holes from the first electrode 54 to the hole-transport layer 55 can be formed between the first electrode 54 and the hole-transport layer 55. Similarly, an electron-injection layer can also be formed between the second electrode 58 and the electron-transport layer 57.

[0177] Each of the red color layer 56R, the green color layer 56G, and the blue color layer 56B can be formed by a single light-emitting layer or by a plurality of layers stacked. For example, the red color layer 56R can be configured by two layers, in which a layer on the upper side is formed by a red light-emitting layer, and a layer on the lower side is formed by a hole-transport layer or an electron-blocking layer. Alternatively, a layer on the lower side can be formed by a red light-emitting layer, and a layer on the upper side can be formed by an electron-transport layer or a hole-blocking layer. By providing a layer on the lower side or the upper side of the light-emitting layer as such, the light-emitting position of the light-emitting layer is adjusted, and the color purity of the light-emitting element is improved by adjusting the optical path length.

[0178] Further, in this embodiment, an example of the red color layer 56R is shown, but the same configuration can be employed in the green color layer 56G and the blue color layer 56B. Further, the number of layers to be stacked can be two or more. Further, layers of different materials can be stacked as in the light-emitting layer and the electron-blocking layer, or layers of the same material can be stacked, for example, two or more light-emitting layers.

[0179] Next, an example of a method for manufacturing an organic EL display device will be described. Here, a case where the red color layer 56R is configured by two layers of a lower layer 56R1 and an upper layer 56R2, and the green color layer 56G and the blue color layer 56B are each configured by a single light-emitting layer will be described.

[0180] First, a circuit (not shown) for driving the organic EL display device and a substrate 53 on which the first electrode 54 is formed are prepared. Further, the material of the substrate 53 is not particularly limited, and the substrate 53 can be configured by glass, plastic, metal, or the like. In this embodiment, as the substrate 53, a substrate on which a film of polyimide is stacked on a glass substrate is used.

[0181] A resin layer of acrylic or polyimide or the like is applied to the substrate 53 on which the first electrode 54 is formed by bar coating or spin coating, and the resin layer is patterned by photolithography so as to form an opening in the portion on which the first electrode 54 is formed, and an insulating layer 59 is formed. The opening portion corresponds to a light-emitting region in which the light-emitting element actually emits light. Further, in this embodiment, a large substrate is processed before the insulating layer 59 is formed, and a process of dividing the substrate 53 is performed after the insulating layer 59 is formed.

[0182] The substrate 53 on which the insulating layer 59 has been patterned is carried into the first film formation chamber 303, and the hole transport layer 55 is formed on the first electrode 54 of the display region as a common layer. The hole transport layer 55 is formed using a mask having openings formed in each display region 51 that will eventually become a panel portion of one organic EL display device.

[0183] Next, the substrate 53 on which the hole transport layer 55 has been formed is carried into the second film formation chamber 303. The substrate 53 is aligned with the mask, and the substrate is placed on the mask, and the red color layer 56R is formed on the portion of the hole transport layer 55 on which the red light emitting element of the substrate 53 is disposed (the region in which the red sub-pixel is formed). Here, the mask used in the second film formation chamber is a high-precision mask having openings formed in the regions of the substrate 53 that will become red sub-pixels among the plurality of regions that will become sub-pixels of the organic EL display device. Thus, the red color layer 56R including the red light emitting layer is formed only in the regions of the substrate 53 that will become red sub-pixels among the regions that will become a plurality of sub-pixels. In other words, the red color layer 56R is not formed in the regions of the substrate 53 that will become blue sub-pixels and green sub-pixels among the regions that will become a plurality of sub-pixels, and is selectively formed in the regions that will become red sub-pixels.

[0184] The green color layer 56G is formed in the third film formation chamber 303 in the same manner as the formation of the red color layer 56R, and the blue color layer 56B is formed in the fourth film formation chamber 303. After the formation of the red color layer 56R, the green color layer 56G, and the blue color layer 56B is completed, the electron transport layer 57 is formed in the entire display region 51 in the fifth film formation chamber 303. The electron transport layer 57 is formed as a common layer on the three color layers 56R, 56G, and 56B.

[0185] The substrate on which the electron transport layer 57 has been formed is moved to the sixth film formation chamber 303, and the second electrode 58 is formed. In the present embodiment, each layer is formed by vacuum evaporation in the first film formation chamber 303 to the sixth film formation chamber 303. However, the present application is not limited thereto, and for example, the second electrode 58 in the sixth film formation chamber 303 can be formed by sputtering. After that, the substrate on which the second electrode 68 has been formed is moved to a sealing device, and the protective layer 60B is formed by plasma CVD (sealing process), and the organic EL display device 50 is completed. Here, the protective layer 60B is formed by the CVD method, but the present application is not limited thereto, and the protective layer 60B can be formed by the ALD method or the inkjet method.

[0186] Here, for the film formation in the first film formation chamber 303 to the sixth film formation chamber 303, film formation is performed using a mask in which openings corresponding to the patterns of the respective layers to be formed are formed. At the time of film formation, after the relative position adjustment (alignment) of the substrate 53 and the mask is performed, the substrate 53 is placed on the mask and film formation is performed. Here, for the alignment process performed in each film formation chamber, the alignment process is performed as described above.

[0187] <Other Embodiments>

[0188] In the above embodiment, a configuration in which the correction information 142a and 142b is stored in the storage section 142 of each control device 14 is assumed. However, the correction information 142a and 142b can be stored in the upper-level device 300 separately for each control device 14, and each control device 14 can acquire the correction information 142a and 142b from the upper-level device 300 through communication.

[0189] In the above embodiment, the correction of the control amount based on the substrate information is performed in the second alignment, but the correction can also be performed in the first alignment.

[0190] In the above embodiment, in the second alignment, the substrate 100 and the mask 101 are partially brought into contact and the positional displacement is measured, but the measurement can also be performed in a state in which the both are brought close without contact.

[0191] In the above embodiment, the control device 14 acquires the substrate information from the upper-level device 300 (step S1). However, for example, the substrate information can also be acquired from the control device 309 that controls the substrate transfer robot 302a through communication.

[0192] In the above embodiment, the control device 14 acquires the substrate information from the upper-level device 300 through communication (step S1). However, for the substrate information, for example, a code indicating the substrate information can be previously given to each substrate 100, and the control device 14 can acquire the substrate information by reading the code. The code reading unit is electrically connected to the control device 14, and can be provided in the film formation chamber 303 or in the film formation device 1.

[0193] The present application can also be realized by a program that realizes one or more functions of the above embodiment being supplied to a system or a device via a network or a storage medium, and being read out by one or more processors in a computer of the system or the device and executed. In addition, the present application can also be realized by a circuit (for example, an ASIC) that realizes one or more functions.

[0194] The present application is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the application. Therefore, the claims are appended thereto in order to define the scope of the present application.

Claims

1. An alignment device, comprising: a substrate support member that supports a peripheral portion of any one of a plurality of substrates obtained by dividing a large substrate; a mask support member that supports a mask; an approach and separation member that approaches and separates the substrate supported by the substrate support member and the mask supported by the mask support member in a direction of gravity; a measurement member that measures a positional displacement of the substrate and the mask; a position adjustment member that adjusts a relative position of the substrate and the mask in a horizontal direction orthogonal to the direction of gravity; and a control member that controls the position adjustment member, causes the substrate and the mask to coincide with each other when the positional displacement is within an allowable range, characterized in that the alignment device comprises an acquisition member that acquires substrate information of the substrate supported by the substrate support member, the substrate information being related to a portion in the large substrate before division and taking into account a substrate characteristic including at least one of a size and a rigidity distribution, the control member controls the position adjustment member based on the positional displacement measured by the measurement member and the substrate information acquired by the acquisition member when adjusting the relative position in the horizontal direction by the position adjustment member in a state where the substrate and the mask are separated by the approach and separation member after measuring the positional displacement by the measurement member in a state where the substrate and the mask are partially in contact.

2. The alignment device according to claim 1, characterized in that the measurement action by the measurement member and the position adjustment action by the position adjustment member are repeatedly performed until the positional displacement becomes within the allowable range.

3. The alignment device according to claim 2, characterized in that the control member controls the position adjustment member based on the positional displacement measured by the measurement member, the substrate information acquired by the acquisition member, and the number of times of the position adjustment action.

4. The alignment device according to claim 3, characterized in that the number of times of the position adjustment action is the number of times of the position adjustment action that has been performed on the substrate in order to make the positional displacement within the allowable range.

5. The alignment device according to claim 3, characterized in that the alignment device comprises a storage member that stores correction information in which a portion of the large substrate and the number of times of the position adjustment action are in a corresponding relationship, the control member sets a control amount of the position adjustment member based on the positional displacement measured by the measurement member, and the control member reads out the correction information corresponding to the portion indicated by the substrate information from the storage member and corrects the control amount according to the read correction information.

6. The alignment device according to claim 5, characterized in that the alignment device comprises an update member that updates the correction information. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 7. The alignment device according to claim 6, wherein the updating means updates the correction information based on a measurement result of the measurement operation by the measurement means after the position adjustment operation by the position adjustment means.

8. The alignment device according to claim 6, wherein the updating means updates the correction information corresponding to the number of times of the position adjustment operation based on a measurement result of the measurement operation by the measurement means after the position adjustment operation by the position adjustment means.

9. The alignment device according to claim 1, wherein the alignment device has storage means that stores correction information in which a portion of the large substrate is associated, the control means sets a control amount of the position adjustment means based on the positional displacement amount measured by the measurement means, and the control means reads out the correction information corresponding to the portion indicated by the substrate information from the storage means, and corrects the control amount in accordance with the read-out correction information.

10. The alignment device according to claim 9, wherein the alignment device has updating means that updates the correction information.

11. The alignment device according to claim 10, wherein the updating means updates the correction information based on a measurement result of the measurement operation by the measurement means after the position adjustment operation by the position adjustment means.

12. The alignment device according to claim 10, wherein the updating means updates the correction information corresponding to the number of times of the position adjustment operation based on a measurement result of the measurement operation by the measurement means after the position adjustment operation by the position adjustment means.

13. The alignment device according to any one of claims 1 to 12, wherein the position adjustment means moves the substrate support means and adjusts the relative position, the approach and separation means moves the substrate support means and approaches and separates the substrate with respect to the mask.

14. The alignment device according to any one of claims 1 to 12, wherein the substrate support means includes a clamping portion that clamps at least a portion of the peripheral portion of the substrate.

15. A film formation device, comprising: the alignment device according to any one of claims 1 to 14; and film formation means that performs film formation on the substrate via the mask.

16. An alignment method, comprising: a support process in which a peripheral portion of any one of a plurality of substrates obtained by dividing a large substrate is supported; a measurement process in which a positional displacement amount of the substrate with respect to a mask is measured in a state in which the substrate and the mask are locally in contact with each other; and a control process in which a control amount of a position adjustment means is set based on the positional displacement amount measured in the measurement process. a position adjustment process in which, after the measurement process, in a state in which the substrate and the mask are separated from each other, a relative position of the substrate and the mask in a horizontal direction is adjusted on the basis of the positional displacement amount measured in the measurement process, in a case where the positional displacement amount is within an allowable range, causing the substrate and the mask to coincide with each other, characterized in that the alignment method includes an acquisition process in which substrate information related to a portion in the large substrate before the division and taking into account a substrate characteristic including at least one of a size and a rigidity distribution is acquired for the substrate on which the adjustment of the relative position is performed, in the position adjustment process, the relative position of the substrate and the mask in the horizontal direction is adjusted on the basis of the positional displacement amount measured in the measurement process and the substrate information acquired in the acquisition process.

17. An alignment method including: a support process in which a peripheral edge portion of any one of a plurality of substrates obtained by dividing a large substrate is supported; a measurement process in which a positional displacement amount of the substrate and a mask is measured in a state in which the substrate and the mask are partially in contact with each other; and a position adjustment process in which, after the measurement process, in a state in which the substrate and the mask are separated from each other, a relative position of the substrate and the mask in a horizontal direction is adjusted on the basis of the positional displacement amount measured in the measurement process, the measurement process and the position adjustment process are repeatedly performed until the positional displacement amount becomes within an allowable range, and in a case where the positional displacement amount is within the allowable range, the substrate and the mask are caused to coincide with each other, characterized in that the alignment method includes an acquisition process in which substrate information related to a portion in the large substrate before the division and taking into account a substrate characteristic including at least one of a size and a rigidity distribution is acquired for the substrate on which the adjustment of the relative position is performed, in the position adjustment process, the relative position of the substrate and the mask in the horizontal direction is adjusted on the basis of the positional displacement amount measured in the measurement process, the substrate information acquired in the acquisition process, and a number of times of the position adjustment process.

18. A method of manufacturing an electronic device, characterized by the method of manufacturing the electronic device includes: an alignment process in which an alignment of a substrate and a mask is performed by the alignment method according to claim 16 or 17; and a film formation process in which the substrate is subjected to film formation via the mask on which the adjustment of the relative position is performed by the alignment process.

19. A computer-readable storage medium, characterized by the computer-readable storage medium stores a program for causing a computer to execute the alignment method according to claim 16 or 17.

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