Chip detection system and detection method

Abstract

The present disclosure relates to a chip detection system and detection method. The detection system includes: a sample stage for supporting the chip; an X-ray imaging device configured to obtain an X-ray image of the chip; a control device configured to determine the position information of a target area in the chip according to the X-ray image; and a local processing device configured to generate an energy beam and focus the energy beam on the chip to locally process the chip.

Description

Technical Field

[0001] The present disclosure relates to a chip detection system and a chip detection method. Background Art

[0002] The chip package can protect the chip and its interconnects from damage caused by the environment and transportation, provide physical support for the chip, and provide heat dissipation for the chip. However, problems with the chip package and the chip itself can cause the packaged chip to fail. For example, warping of the printed circuit board can lead to insufficient or no connection to the pad, material deformation and cracks can cause layer peeling within the chip, and so on. As people's requirements for product quality and reliability continue to increase, failure analysis of packaged chips is becoming more and more important.

[0003] Confirming whether there is a problem with the package or the chip itself requires a step-by-step elimination process. Confirming whether there is a problem with the package usually involves first removing the packaging material, then cutting off certain metal leads to perform electrical testing to determine if the failure is caused by a problem with the package. Confirming whether there is a problem with the chip usually involves first removing the packaging material, then cutting off certain metal leads to isolate certain chips or bare cores in the package, for example, cutting off certain interconnects or connecting leads to no longer power certain chips, and then performing electrical testing to determine which chips have problems that cause the failure.

[0004] Generally speaking, chemical methods and reactive ion etching techniques can be used to remove packaging materials. However, these methods all have certain problems.

[0005] For example, the method of removing the packaging material by pickling has the risk of etching the copper metal leads. In addition, in more advanced manufacturing processes, the lead frame metal wires are usually very thin, which limits the application of this pickling method. For example, the use of reactive ion etching technology often removes the entire packaging layer. In addition, in the absence of hazardous gases (such as chlorine), reactive ion etching technology cannot penetrate planar metal layers, making removal in the case of such layers very difficult.

[0006] Currently, laser delamination technology is often used to remove packaging materials, and then perform failure analysis on the packaged chip or modify the circuit. The principle of laser delamination technology is to use lasers of different wavelengths to remove the embedding resin, but retain the copper wire or gold wire part, observe the sample in real time during the laser cutting process, and finally obtain a sample with the metal wire exposed. However, this method requires the removal of almost all packaging materials, which will also damage the metal wire itself. Summary of the invention

[0007] The present disclosure provides a chip detection system and a chip detection method. The detection system and the detection method adopt a combination of X-ray imaging technology and laser processing technology, which can not only obtain a high-resolution internal image of the chip, but also can use a laser beam to process a reference mark on the sample surface to determine the position information of the target to be processed with high precision, so that only a small amount of packaging material can be removed to perform a cutting operation on the conductive connection parts inside the chip, thereby performing efficient and reliable failure analysis. In addition, the detection system has a simple structure and high flexibility. Further, the detection system and the detection method can also be used to cut the chip to expose the target to be processed, so as to perform energy spectrum or mass spectrum analysis to determine the composition of the impurity particles that cause chip problems.

[0008] The above objectives are achieved by the following detection system and detection method.

[0009] The present disclosure relates to a chip detection system, which includes: a sample stage for supporting the chip; an X-ray imaging device configured to obtain an X-ray image of the chip; a control device configured to determine position information of a target area inside the chip based on the X-ray image; and a local processing device configured to generate an energy beam and focus the energy beam on the chip to locally process the chip.

[0010] In one embodiment, the local processing device includes a laser device configured to generate a laser beam and focus the laser beam on the chip to laser process the chip.

[0011] In one embodiment, the local processing apparatus includes a focused ion beam system configured to generate a focused ion beam and process the chip with the focused ion beam.

[0012] In one embodiment, the laser device is configured to perform a severing operation on the conductive connection component at a target area.

[0013] In one embodiment, the laser device is configured to perform a dicing operation on the die to expose a target area.

[0014] In one embodiment, the local processing device also includes a focused ion beam system, wherein the laser device is configured to perform a cutting operation on the chip to expose a chip portion near the target area, and the focused ion beam system is configured to perform a further cutting operation on the chip with a focused ion beam to expose the target area.

[0015] In one embodiment, the laser device is configured to form a fiducial mark on the surface of the chip near the target area.

[0016] In one embodiment, the control device is configured to determine the position of the target region on the surface of the chip relative to the reference mark based on the X-ray image, and determine the depth of the target region relative to the reference mark.

[0017] In one embodiment, the control device is configured to calibrate the relationship between the laser processing depth and the parameters of the laser beam and the material of the chip, and the relationship between the laser processing depth and the X-ray image, and store the relationship in a lookup table.

[0018] In one embodiment, the reference mark comprises a plurality of reference marks in the form of a ruler, and the plurality of reference marks have different scales and / or positions.

[0019] In one embodiment, the detection system further comprises an actuator configured to move the sample stage.

[0020] In one embodiment, the laser device includes a first cavity, and the actuator is configured to move the sample stage into or out of the first cavity.

[0021] In one embodiment, the detection system further includes an exhaust system configured to exhaust substances generated during the laser processing from the first chamber.

[0022] In one embodiment, the detection system further comprises a scanning electron microscope, the scanning electron microscope and the focused ion beam system comprise a second chamber, and the actuator is further configured to move the sample stage into or out of the second chamber.

[0023] In one embodiment, the laser device includes a plurality of lasers, and the control device is configured to select one of the plurality of lasers to generate the laser beam according to the material of the chip.

[0024] In one embodiment, the laser device comprises a femtosecond laser.

[0025] The present disclosure also relates to a chip detection method, which includes the following steps: placing the chip on a sample stage; forming a reference mark on the surface of the chip near a target area; obtaining an X-ray image of the target area inside the chip to identify the target area; determining position information of the target area relative to the reference mark based on the X-ray image; and locally processing the chip using an energy beam.

[0026] In one embodiment, the step of locally processing the chip using an energy beam includes: performing laser processing on the chip using a laser beam.

[0027] In one embodiment, the step of locally processing the chip using an energy beam includes: processing the chip using a focused ion beam.

[0028] In one embodiment, laser processing the chip using a laser beam includes: cutting off the conductive connection component in a target area.

[0029] In one embodiment, laser processing the chip using a laser beam includes: performing a cutting operation on the chip to expose a target area.

[0030] In one embodiment, laser processing the chip using a laser beam includes performing a sawing operation on the chip to expose a portion of the chip near a target region, and the method further includes performing a further sawing operation on the chip using a focused ion beam to expose the target region.

[0031] In one embodiment, the method further comprises the following steps: calibrating the relationship between the laser processing depth and the parameters of the laser beam and the material of the chip, and the relationship between the laser processing depth and the X-ray image.

[0032] In one embodiment, the step of obtaining an X-ray image of a target area inside the chip to identify the target area is performed before the step of forming a reference mark on the surface of the chip near the target area.

[0033] In one embodiment, after laser processing the chip using the laser beam, the method further includes the following step: performing failure analysis on the chip.

[0034] In one embodiment, after laser processing the chip using the laser beam, the method further comprises the following step: performing energy spectrum or mass spectrum analysis on the target area.

[0035] In one embodiment, after laser processing the chip using the laser beam, the method further comprises the step of obtaining another X-ray image of the target area to determine the state of the target area after the cutting operation.

[0036] In one embodiment, before the step of forming a reference mark on the surface of the chip near the target area, the method further comprises the steps of obtaining an overall X-ray image of the chip and identifying the target area and determining the position of the reference mark.

[0037] In one embodiment, the step of determining the position information of the target area relative to the reference mark based on the X-ray image includes: determining the position of the target area on the surface of the chip relative to the reference mark based on the X-ray image, and determining the depth of the target area relative to the reference mark.

[0038] In one embodiment, the step of forming a reference mark on the surface of the chip near the target area includes: forming corresponding multiple reference marks for multiple conductive connection components of different sizes and / or different positions, respectively, and the multiple reference marks have different scales and / or positions.

[0039] In one embodiment, the method further comprises the following step: obtaining an electron microscopic image of the chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The advantages and purposes of the present disclosure can be better understood from the preferred embodiments of the present disclosure described in detail below in conjunction with the accompanying drawings. In order to better show the relationship between the components in the accompanying drawings, the accompanying drawings are not drawn to scale. In the accompanying drawings:

[0041] Figure 1 A schematic diagram of a chip detection system according to an embodiment of the present disclosure is shown;

[0042] Figure 2 shows a schematic cross-sectional view of a chip;

[0043] Figure 3 A schematic diagram showing an embodiment of a reference mark formed on the surface of a chip using a detection system of a chip according to the present disclosure;

[0044] Figure 4 A schematic diagram showing another embodiment of a reference mark formed on the surface of a chip using a detection system of a chip according to the present disclosure;

[0045] Figure 5 A schematic diagram showing a method of using a detection system of a chip according to the present disclosure to obtain an X-ray image of a target area within a chip;

[0046] Figure 6 A schematic diagram showing laser processing of a target area within a chip using a detection system for a chip according to the present disclosure;

[0047] Figure 7 A schematic diagram showing the use of a chip detection system according to the present disclosure to obtain an X-ray image of a chip after laser processing; and

[0048] Figure 8 A flow chart of a chip detection method according to an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0049] Various embodiments according to the present disclosure will be described in detail with reference to the accompanying drawings. It should be noted here that in the accompanying drawings, the same reference numerals are given to components having substantially the same or similar structures and functions, and repeated descriptions thereof will be omitted. The description of the term "first" and its variants is only for distinguishing the components and does not limit the scope of the present disclosure. Without departing from the scope of the present disclosure, the "first component" may be written as the "second component", etc.

[0050] The drawings in this specification are schematic diagrams, which assist in explaining the concept of the present disclosure and schematically show the shapes of various parts and their mutual relationships.

[0051] Reference below Figures 1 to 8 , a preferred embodiment of the present disclosure is described in detail.

[0052] exist Figure 1 In FIG. 1 , a chip detection system according to an embodiment of the present disclosure is shown highly schematically. The chip detection system comprises a sample stage 1 , an X-ray imaging device 2 , a control device 3 and a laser device 4 .

[0053] The sample stage 1 is used to support the chip 5 to be subjected to failure analysis, and its cross-sectional view is as follows: Figure 2 As shown. The chip 5 may be a packaged chip, for example, including a substrate 50, a chip 51, a packaging material 52, and a conductive connection component 53. The packaging material 52 may be, for example, a resin. The conductive connection component 53 may be a wire bonding structure between the chips 51, a wire bonding structure between the chip 51 and the substrate 50, etc. For example, the conductive connection component 53 is a metal wire located inside the packaged chip 5, such as Figure 2 As shown in , the chip 51 is electrically connected to the pads on the substrate 51 to achieve electrical connection within the packaged chip or to power the chip. The chip 5 may include only one chip 51 or may include a plurality of stacked chips 51. In other examples, the chip 5 may be a bare die.

[0054] The X-ray imaging device 2 is configured to obtain an X-ray image of the chip 5. The control device 3 is configured to determine the position information of the target area inside the chip 5 according to the X-ray image. The control device 3 may include a computer unit and a software program. The laser device 4 is configured to generate a laser beam 41 and focus the laser beam 41 inside the chip 5 to use the laser beam to cut off the conductive connection components in the target area.

[0055] The X-ray imaging device 2 may be an X-ray microscope or an X-ray CT machine. For example, the X-ray imaging device 2 may include a housing 20, an X-ray source 21 for generating X-rays, an optical system 22 for transmitting X-rays to a sample, and an image recording device 23 sensitive to X-rays, such as a CCD, etc., disposed in the housing 20. Of course, the X-ray imaging device may not include the housing 20. Using an X-ray imaging device that can provide sub-micron resolution can determine the position of the target to be processed with high precision, thereby improving the accuracy of subsequent laser processing.

[0056] The laser device 4 can perform laser processing on the sample, such as cutting, milling, etching, etc. Figure 1The laser device 4 is only schematically shown in the figure, and the laser device may include a first cavity 40 as a part thereof, in which the laser processing is performed. The laser device 4 may also include a laser source for generating a laser beam and an optical system for guiding the laser beam, etc. Figure 1 The box above the first cavity 40 in FIG. 4 is schematically represented. For example, the optical system for guiding the laser beam may include a plurality of beam guiding elements, such as mirrors, lenses, prisms, and the like.

[0057] Different materials have different transmittances to laser beams of different wavelengths, and the use of a laser beam of the same wavelength is not suitable for processing all materials. In order to process different materials, the laser device 4 may include multiple lasers, which can be used to generate beams of different wavelengths. The control device 3 may be configured to select one of the multiple lasers to generate a laser beam of a desired wavelength according to the material of the chip 5. For example, the above selection may be made based on the packaging material of the chip. For example, a laser that generates a beam in the infrared wavelength range or a laser that generates a beam in the ultraviolet wavelength range may be selected. In this way, the flexibility of the detection system disclosed herein may be improved.

[0058] For example, the laser device 4 may include a femtosecond laser. When a femtosecond laser is used to laser process a chip, less packaging material is removed, so less pollutants or residues are generated, such as silicon oxide, and there is almost no damage to other components. However, the present disclosure is not limited to this, and lasers with other pulse widths may also be used to adapt to the packaging of different materials.

[0059] Laser processing of the chip includes cutting the conductive connection 53, such as a wire. By cutting the wire, failure analysis can be performed on the packaged chip. By cutting the wire that powers one of the multiple bare cores in the chip, some parts of the chip can be isolated from other parts, and other parts can be electrically tested. For example, techniques such as time domain reflectivity can be used, and electrical signals pass through the wire to determine whether there is a potential fault in the wire. By cutting the wire at a specific location, it can be determined whether the above fault occurred before or after cutting. By cutting the wire and contacting the cut portion separately, independent tests can be run or certain default values ​​can be entered. This will allow certain modifications to be checked, which allow different design implementation tests to be performed through circuit editing.

[0060] Laser processing of the chip also includes processing a reference mark 54. The laser device 4 can be configured to process a reference mark 54 on the surface of the chip 5 near the target area, such as Figure 3 and 4 FIG3 shows a cross-shaped reference mark, Figure 4A reference mark in the form of a scale with scale is shown. By pre-processing the reference mark, the exact position of the target area 55 in the chip can be determined, so that high-precision laser processing can be achieved. The target area 55 is, for example, Figure 2 The area near the portion to be cut of the conductive connection component 53 shown in the figure, or it can be considered to be the portion to be cut of the conductive connection component 53. Alternatively, the target area 55 is a portion of a chip inside the packaged chip, which can be a short-circuit portion. Alternatively, the target area 55 is a portion inside the bare core. After processing the reference mark, an X-ray image of the target area of ​​the chip is obtained using the X-ray imaging device 2, and then the control device 3 is configured to determine the position of the target area 55 on the surface of the chip relative to the reference mark 54 according to the X-ray image, for example, the position of the projection 56 of the target area 55 on the surface of the packaged chip relative to the reference mark 54. In some examples, for multiple conductive connection components, multiple reference marks, such as multiple cross-shaped reference marks, multiple reference marks in the form of rulers, or a combination of the two, can be processed on the surface of the packaged chip accordingly. For example, for conductive connection components with different sizes, reference marks in the form of rulers with different scales can be processed accordingly. A reference mark in the form of a ruler with a scale of about 100 microns can be formed for a wire with a diameter of 100 microns, and a reference mark in the form of a ruler with a scale of about 20 microns can be formed for a wire with a diameter of 20 microns. For example, for conductive connection components with different positions, reference marks with different positions may be processed accordingly, so that the reference marks are located as close as possible to the projection of the target area on the surface of the packaged chip.

[0061] The control device 3 of the present disclosure can be configured to calibrate the relationship between the laser processing depth and the parameters of the laser beam and the packaging material of the packaged chip, as well as the relationship between the laser processing depth and the X-ray image, and store the relationship in a lookup table. Further, the control device can determine the depth of the target area 55 relative to the reference mark 54. The laser processing depth is related to the total time of laser beam irradiation, laser pulse frequency, laser pulse energy, laser beam scanning rate, etc. The laser processing depth can be set by changing the above parameters. In addition, the laser processing depth is also related to the packaging material. Therefore, the corresponding relationship between the above laser beam parameters, the packaging material and the laser processing depth can be stored in the lookup table of the control device 3, and these corresponding relationships are known in advance, for example, through experiments. In addition, by fitting the number of layers of the X-ray image with the laser processing depth, the control device 3 can obtain the corresponding relationship between the number of layers of the X-ray image and the laser processing depth. Then, through the above calibration, the control device 3 can obtain the corresponding relationship between the parameters of the laser beam, the packaging material, and the number of layers of the X-ray image, so the laser device 4 can be adjusted according to the X-ray image layer and the packaging material where the target area is located. With this calibration, the depth of the target area can be determined with high accuracy, allowing high-precision laser processing.

[0062] In addition, the detection system further includes an actuator 6, and the actuator 6 is configured to move the sample stage 1. For example, the detection system further includes a guide rail 7, and the actuator 6 is configured to move the sample stage 1 on the guide rail 7.

[0063] In such Figure 1 As shown, the actuator 6 may be configured to move the sample stage 1 from the first cavity 40 to the X-ray imaging device 2 or from the X-ray imaging device 2 to the first cavity 40. Of course, the present disclosure is not limited thereto, and in other examples, the actuator 6 may be configured only to move the sample stage 1 out of the first cavity 40 or to move the sample stage 1 into the first cavity 40.

[0064] Further, the actuator 6 can also be configured to move the sample stage 1 in the first cavity 40 so that the laser beam 41 can be scanned on the packaged chip 5. Alternatively, the detection system includes a driver ( Figure 1 ), which can be configured to move the beam guiding element of the laser device 4 so that the laser beam 41 can be scanned on the packaged chip 5.

[0065] For example, the material removed by laser processing can be converted into material dust mist. In order to discharge the material dust mist from the first cavity 40, the detection system may further include an exhaust system 8, which is configured to discharge the material generated during the laser processing from the first cavity 40. For example, the exhaust system 8 may evacuate the first cavity 40 to keep the first cavity 40 under vacuum conditions. The exhaust system 8 may, for example, include a vacuum pump disposed outside the first cavity. The control device 4 may be configured to control the exhaust system 8 during the laser processing according to the parameters of the laser beam. For example, the pulse frequency of the laser pulse may be selected so that when the next laser pulse impacts the sample, the material dust mist generated during the laser processing is no longer present near the sample, but is discharged outside the first cavity 40. The use of the exhaust system can effectively avoid the accumulation of contaminants at the packaged chip.

[0066] In addition, the detection system may further include a scanning electron microscope 9. The scanning electron microscope 9 may include a second chamber 90 as a part thereof. The actuator 6 is configured to move the sample stage 1 into or out of the second chamber 90. For example, the actuator 6 may move the sample stage 1 from the first chamber 40 into the second chamber 90 or move the sample stage 1 from the second chamber 90 to the first chamber 40. The second chamber 90 may also have an exhaust system (not shown) including a vacuum pump to evacuate the second chamber.

[0067] By setting up a scanning electron microscope 9, the detection system of the present invention can observe the chip before forming the reference mark to determine the position of the processing reference mark, and can also obtain an electron microscope image of the chip during failure analysis, or can further observe the chip after failure analysis for further analysis.

[0068] Furthermore, laser processing of the packaged chip may also include cutting the packaged chip to expose the target area. At this time, the target area may be a short circuit portion in the packaged chip, or a problematic portion. Then, the exposed target area may be subjected to energy spectrum or mass spectrum analysis to determine the composition of the impurity particles causing the chip problem. For example, a scanning electron microscope 9 may be used for energy spectrum analysis.

[0069] In other examples, the detection system of the present disclosure may also include a focused ion beam system. After the laser device uses a laser beam to perform a cutting operation on the packaged chip to expose the portion of the packaged chip near the target area, the focused ion beam system can be configured to focus the ion beam on the packaged chip, more precisely, on the exposed portion of the packaged chip, to perform further cutting operations, thereby exposing the target area. In this detection system, a larger portion can be cut using a laser beam, while a smaller portion can be cut using a focused ion beam, thereby achieving high-precision operation. After exposing the target area, an energy spectrum or mass spectrometry analysis can be performed on it to determine the composition of the impurity particles that cause chip problems.

[0070] In other examples, the detection system of the present disclosure may include only a focused ion beam system without a laser device. In the case where the chip is a bare core, the bare core is processed using a focused ion beam, for example, the bare core is cut to expose a target area. At this time, the control device 3 can be configured to calibrate the relationship between the processing depth of the focused ion beam and the parameters of the focused ion beam and the material of the bare core, as well as the relationship between the processing depth of the focused ion beam and the X-ray image, and store the relationship in a lookup table.

[0071] In other examples, the detection system of the present disclosure may further include an optical microscope configured to obtain an optical microscopic image of the chip during laser processing, thereby enabling more detailed observation and analysis of the sample.

[0072] Figure 8 A detection method for a chip according to an embodiment of the present disclosure is shown. The method may include steps S1 to S8. Figure 8 The method shown is applicable to the case where the chip is a packaged chip.

[0073] In step S1, the packaged chip is placed on a sample stage. Specifically, the packaged chip 5 can be placed on a sample stage 1 of a detection system, for example, moved to a sample stage 1 in an X-ray imaging device.

[0074] In step S2, an overall X-ray image of the packaged chip is obtained and the target area is identified, and the position of the reference mark is determined. Specifically, an X-ray imaging device can be used to obtain an overall X-ray image of the packaged chip, and then the target area and the position of the reference mark used as a reference can be determined. In an alternative example, considering that the size of the target area is in the order of microns, in order to obtain a higher resolution, an X-ray imaging device can be used to obtain an X-ray image of a portion of the packaged chip, which contains the target area.

[0075] In step S3, a reference mark is formed on the surface of the packaged chip near the target area. Specifically, the sample stage 1 is moved to the first cavity 40 of the laser device 4, and a suitable laser beam is scanned on the surface of the packaged chip to process the reference mark. The reference mark can have a cross shape, such as Figure 3 as shown, or a ruler with scales, such as Figure 4 As shown. In the case of a ruler, the scale of the ruler can be set to roughly correspond to the size of the conductive connection component (for example, the diameter of the wire), for example, about 20 microns or 100 microns. The reference mark can also be a grid. In some examples, step S3 may include forming corresponding multiple reference marks for multiple conductive connection components of different sizes and / or different positions, and the multiple reference marks are rulers with different scales and / or positions. For example, rulers of different scales can be processed to be used for wires of corresponding sizes respectively. For example, reference marks can be processed at different positions to make the reference marks as close as possible to the projection of the target area on the surface of the packaged chip. Adopting this approach increases the flexibility of the method and improves the efficiency of subsequent failure analysis.

[0076] In step S4, the relationship between the laser processing depth and the parameters of the laser beam and the packaging material of the packaged chip, as well as the relationship between the laser processing depth and the X-ray image, is calibrated. Specifically, the control device 3 of the detection system is used to calibrate the relationship between the laser processing depth and the parameters of the laser beam and the packaging material, as well as the relationship between the laser processing depth and the X-ray image, and the relationship is stored in a lookup table. This step is completed by the software in the control device 3. With this calibration, the depth of the target area can be determined with high precision, so that high-precision laser processing can be achieved.

[0077] The order of steps S3 and S4 is not limited to Figure 8 As shown in , step S4 may be performed first and then step S3.

[0078] In step S5, an X-ray image of the target area inside the packaged chip is obtained to identify the target area. Specifically, after the laser device 4 processes the reference mark, the sample stage 1 is moved to the X-ray imaging device, and the X-ray imaging device is used to obtain an X-ray image of the target area of ​​the packaged chip. Figure 5 As schematically shown, the X-rays irradiate only the portion of the packaged chip near the target area of ​​the packaged chip.

[0079] The above step S5 may also be performed before step S3.

[0080] In step S6, the position information of the target area relative to the reference mark is determined based on the X-ray image obtained in step S5. Specifically, the steps include: determining the position of the target area relative to the reference mark on the surface of the packaged chip, that is, the position of the projection of the target area on the surface of the packaged chip relative to the reference mark, and determining the depth of the target area relative to the reference mark. Figure 4 As shown, the position coordinates x and y of the projection 56 of the target area 55 on the surface of the packaged chip can be determined relative to the scale 54. According to the relationship in the calibration step, the depth h of the target area 55 relative to the scale and the laser beam parameters related to the depth can be determined.

[0081] In step S7, the packaged chip is laser processed using a laser beam, more specifically, the conductive connection component is cut off in a target area using the laser beam. Figure 6 The schematic diagram shows the use of a laser beam 41 generated by a laser device to cut off the conductive connection component 53 in the packaged chip. In FIG6 , the packaging material above the target area is first removed by the laser beam, and then the conductive connection component 53 is cut off. Figure 6 It can be clearly seen that the method of the present disclosure requires only the removal of less packaging material.

[0082] In step S8, another X-ray image of the target area of ​​the packaged chip is obtained to determine the state of the target area after the cutting operation, that is, to determine the state of the target area after the laser processing. Figure 7 As shown, the sample stage 1 is moved to the X-ray imaging device, and the portion of the packaged chip near the target area of ​​the packaged chip is irradiated with X-rays. By observing the X-ray image, the state of the target area after laser processing can be known, such as whether the wire is cut. In other examples, step S8 can be omitted.

[0083] After the step of performing the cutting operation, the packaged chip can be subjected to failure analysis. Specifically, electrical testing is performed after cutting off certain conductive connection components to determine whether the failure is caused by a problem with the package or a problem with the chip.

[0084] In an alternative embodiment of the present disclosure, the method may not include step S2. In the case where the design drawing of the chip indicates the approximate location of each wire, step S2 may be omitted. The target area and the location of the reference mark may be directly determined based on the design drawing. In addition, in the case where the packaged chip is small, the reference mark may be directly formed on the surface of the packaged chip without predetermining the location of the reference mark.

[0085] In an alternative embodiment of the present disclosure, step S7 may be to perform a cutting operation on the packaged chip using a laser beam to expose the target area. In other embodiments, step S7 may be to first perform a cutting operation on the packaged chip using a laser beam to expose a portion of the packaged chip near the target area, and then perform a further cutting operation on the packaged chip using a focused ion beam to expose the target area. In these embodiments, after step S7, an energy spectrum or mass spectrometry analysis may be performed on the exposed target area to determine the composition of the impurity particles that cause chip problems.

[0086] In addition, the method of the present disclosure may further include the step of obtaining an electron microscopic image of the packaged chip. This step is implemented by a scanning electron microscope, which can observe the packaged chip before forming the reference mark to determine the position of the processing reference mark, or can obtain the electron microscopic image of the packaged chip during the failure analysis, or can observe the packaged chip after the failure analysis for further analysis, such as the energy spectrum analysis described above.

[0087] Furthermore, the method of the present disclosure may also include the step of obtaining an optical microscopic image of the packaged chip using an optical microscope. Specifically, the optical microscope obtains an optical microscopic image of the packaged sample during laser processing. In this way, more detailed observation and analysis of the sample can be achieved.

[0088] The above method can be implemented using the above detection system according to the present disclosure, and can also be implemented using easily available X-ray imaging devices and laser processing devices.

[0089] In another example, the chip detection method of the present disclosure can be applied to a bare core. In this case, the packaged chips in steps S1 to S3 and S5, S6 and S8 are replaced with bare cores, and step S7 is to process the bare core using a focused ion beam, such as performing a cutting operation on the bare core. In addition, step S4 is to calibrate the relationship between the focused ion beam processing depth and the parameters of the focused ion beam and the material of the bare core, as well as the relationship between the focused ion beam processing depth and the X-ray image. After these steps, the target area inside the bare core can be exposed, and then the exposed target area can be subjected to energy spectrum or mass spectrum analysis to determine the composition of the impurity particles that cause chip problems.

[0090] The detection system and method disclosed in the present invention adopt a combination of X-ray imaging technology and laser processing technology, which can not only obtain high-resolution internal images of the chip, but also determine the position information of the target to be processed with high precision, so that the conductive connection parts inside the chip can be cut by removing only a small amount of packaging material, thereby performing efficient and reliable failure analysis. In addition, the detection system and method disclosed in the present invention are highly flexible and can be applied to different packaging materials. Furthermore, the detection system and detection method can also be used to cut the chip to expose the target to be processed, so as to perform energy spectrum or mass spectrum analysis to determine the composition of the impurity particles that cause chip problems.

[0091] Moreover, the technical features disclosed above are not limited to the disclosed combinations with other features. Those skilled in the art may also make other combinations between the technical features according to the purpose of disclosure to achieve the purpose of this disclosure.

Claims

1. A chip detection system, comprising: A sample stage, used for supporting the chip; An X-ray imaging device configured to be above the surface of the chip and obtain an X-ray image of the chip; a control device configured to determine position information of a target area inside the chip according to the X-ray image; and a local processing device configured to generate an energy beam and focus the energy beam on the chip to locally process the chip, wherein the local processing device is configured to form a reference mark on the surface of the chip near the target area, Before the step of forming the reference mark on the surface of the chip near the target area, the detection system uses the X-ray imaging device to obtain an overall X-ray image of the chip and identify the target area, and determine the position of the reference mark, After forming the reference mark, the X-ray imaging device obtains an X-ray image of the target area, and the control device is configured to determine the position of the target area on the surface of the chip relative to the reference mark and determine the depth of the target area relative to the reference mark based on the X-ray image of the target area.

2. The detection system according to claim 1, wherein: The local processing device includes a laser device configured to generate a laser beam and focus the laser beam on the chip to laser process the chip.

3. The detection system according to claim 1, wherein: The local processing device includes a focused ion beam system configured to generate a focused ion beam and process the chip with the focused ion beam.

4. The detection system according to claim 2, wherein: The laser device is configured to perform a cutting operation on the conductive connection component in the target area.

5. The detection system according to claim 2, wherein: The laser device is configured to perform a dicing operation on the chip to expose the target area.

6. The detection system according to claim 2, wherein: The local processing device also includes a focused ion beam system, wherein the laser device is configured to perform a cutting operation on the chip to expose a chip portion near the target area, and the focused ion beam system is configured to perform a further cutting operation on the chip with a focused ion beam to expose the target area.

7. The detection system according to claim 2, wherein: The laser device is configured to form a fiducial mark on the surface of the chip near the target area.

8. The detection system according to claim 7, wherein: The control device is configured to calibrate the relationship between the laser processing depth and the parameters of the laser beam and the material of the chip, and the relationship between the laser processing depth and the X-ray image, and store the relationship in a lookup table.

9. The detection system according to claim 7, wherein: The reference mark includes a plurality of reference marks in the form of a ruler, and the plurality of reference marks have different scales and / or positions.

10. The detection system of claim 2, further comprising an actuator configured to move the sample stage.

11. The detection system according to claim 10, wherein: The laser device includes a first cavity, and the actuator is configured to move the sample stage into or out of the first cavity.

12. The inspection system of claim 11, further comprising an exhaust system configured to exhaust substances generated during the performance of the laser processing from the first chamber. 13 . The detection system of claim 10 , further comprising a scanning electron microscope, the scanning electron microscope comprising a second chamber, the actuator being further configured to move the sample stage into or out of the second chamber.

14. The detection system according to claim 2, wherein: The laser device includes a plurality of lasers, and the control device is configured to select one of the plurality of lasers to generate the laser beam according to the material of the chip.

15. The detection system according to claim 2, wherein: The laser device includes a femtosecond laser.

16. A chip detection method, wherein: The method comprises the following steps: Place the chip on the sample stage; forming a fiducial mark on a surface of the chip proximate a target area; obtaining an X-ray image of a target area inside the chip using an X-ray imaging device configured above a surface of the chip to identify the target area; Determining position information of the target area relative to the reference mark based on the X-ray image of the target area; and The chip is locally processed using an energy beam, Before the step of forming a reference mark on the surface of the chip near the target area, the method further comprises the following steps: obtaining an overall X-ray image of the chip and identifying the target region using an X-ray imaging device configured to be above the surface of the chip, and determining the position of the fiducial marker, Wherein, the step of determining the position information of the target area relative to the reference mark according to the X-ray image of the target area comprises: Based on the X-ray image of the target area, the position of the target area on the surface of the chip relative to the reference mark is determined, and the depth of the target area relative to the reference mark is determined.

17. The method according to claim 16, wherein: The step of locally processing the chip using an energy beam includes: performing laser processing on the chip using a laser beam.

18. The method according to claim 16, wherein: The step of locally processing the chip using an energy beam includes: processing the chip using a focused ion beam.

19. The method according to claim 17, wherein: The laser processing of the chip using a laser beam includes: cutting off the conductive connection component in the target area.

20. The method according to claim 17, wherein: Laser processing the chip using a laser beam includes performing a cutting operation on the chip to expose the target area.

21. The method according to claim 17, wherein: Laser processing the chip using a laser beam includes performing a cutting operation on the chip to expose a portion of the chip near the target area, and wherein the method further includes performing a further cutting operation on the chip using a focused ion beam to expose the target area.

22. The method according to any one of claims 19 to 21, further comprising the steps of: Calibrate the relationship between laser processing depth and laser beam parameters and chip material, as well as the relationship between laser processing depth and X-ray images.

23. The method according to any one of claims 16 to 21, wherein: The step of obtaining an X-ray image of a target area inside the chip to identify the target area is performed before the step of forming a reference mark on the surface of the chip near the target area.

24. The method of claim 17, wherein: After laser processing the chip using a laser beam, the method further comprises the following steps: Failure analysis is performed on the chip.

25. The method according to claim 20 or 21, wherein: After laser processing the chip using a laser beam, the method further comprises the following steps: Perform energy spectrum or mass spectrum analysis on the target area.

26. The method of claim 19, wherein: After laser processing the chip using a laser beam, the method further comprises the following steps: Another X-ray image of the target region is obtained to determine the state of the target region after the severing operation.

27. The method of claim 19, wherein: The step of forming a fiducial mark on the surface of the chip near the target area comprises: Corresponding multiple reference marks are formed for multiple conductive connection components of different sizes and / or different positions, respectively. The multiple reference marks are scales with different scales and / or positions.

28. The method according to any one of claims 16 to 21, further comprising the steps of: Electron microscopic images of the chip were obtained.

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