In-situ process chamber fixture cleaning for cleaning a substrate

Abstract

The present invention discloses a cleaning assembly. The cleaning assembly includes a substrate. One or more patterns are formed on the bottom side of the substrate. When the substrate is positioned on a fixture, one or more structures within the one or more patterns attract one or more particles from the fixture by at least one of electrostatic attraction or mechanical trapping.

Description

[0001] Cross - Reference to Related Applications

[0002] This application claims the benefit of U.S. Provisional Application No. 62 / 859,587, filed Jun. 10, 2019, entitled “IN SITU PROCESS CHAMBER CHUCK CLEANING BY DUMMY SUBSTRATE,” naming Mor Azaria, Giampietro Bieli, Shai Mark, Adi Pahima, and Yoram Uziel as inventors, under 35 U.S.C. § 119(e), the entire content of which is incorporated herein by reference. This application also claims the benefit of U.S. Provisional Application No. 62 / 910,139, filed Oct. 3, 2019, entitled “IN-SITU PROCESS CHAMBER CHUCK CLEANING BY CLEANING SUBSTRATE,” naming Mor Azaria, Giampietro Bieli, Shai Mark, Adi Pahima, and Yoram Uziel as inventors, under 35 U.S.C. § 119(e), the entire content of which is incorporated herein by reference. TECHNICAL FIELD

[0003] The present invention generally relates to chuck cleaning and, more particularly, to in-situ process chamber chuck cleaning. BACKGROUND ART

[0004] Chuck cleaning is frequently required due to the presence of particles in the process chamber. These particles can be introduced into the process chamber in various ways. Contaminant particles can be generated by the accumulation of materials used by the process tools on the walls of the process chamber. Particulate matter from this material can then fall from the process chamber walls during processing. Additionally, external particles can be carried into the process chamber on external objects such as wafers. The particles cause non-uniform contact between the wafer and the process chuck of a given process tool, which causes non-uniform temperature levels across the wafer during processing. Currently, chuck cleaning is performed by opening the equipment and using a manual cleaning process. The chuck is typically manually cleaned using wipes or brushes. In such cases, the cleaning process requires machine shutdown, flushing of the vacuum, and cooling of the equipment. Additionally, access to the chuck is very limited and may require opening the process chamber lid to reach the wafer chuck of a given process tool. This manual cleaning process and machine setup process are long processes and typically require a complex calibration process.

[0005] Accordingly, it would be advantageous to provide a system and method for solving the drawbacks of the conventional methods identified above. SUMMARY OF THE INVENTION

[0006] Disclosed is a cleaning assembly according to one or more embodiments of the present disclosure. In one embodiment, the cleaning assembly includes a substrate. In another embodiment, one or more patterns are formed on the bottom side of the substrate. In another embodiment, when the substrate is positioned on a fixture, one or more structures within the one or more patterns attract one or more particles from the fixture via at least one of electrostatic attraction or mechanical trapping.

[0007] Disclosed is a system according to one or more embodiments of the present disclosure. In one embodiment, the system includes a process chamber. The process chamber may contain one or more fixtures. In another embodiment, the system includes a handling device. The handling device may be configured to receive a clean substrate cabinet containing one or more clean substrates. The handling device may further be configured to translate the one or more clean substrates from the clean substrate cabinet to the one or more wafer fixtures within the process chamber. In another embodiment, one or more patterns are formed on the bottom side of the one or more clean substrates. In another embodiment, when the one or more clean substrates are positioned on the one or more wafer fixtures, one or more structures within the one or more patterns attract one or more particles from the one or more wafer fixtures via at least one of electrostatic attraction or mechanical trapping.

[0008] Disclosed is a characterization system according to one or more embodiments of the present disclosure. In one embodiment, the characterization system includes a characterization subsystem. The characterization subsystem may be configured to inspect a portion of a wafer disposed on a fixture of a processing tool. The characterization subsystem may further be configured to generate characterization data based on the inspection of the portion of the wafer disposed on the fixture of the processing tool. In another embodiment, the characterization system includes a controller, the controller including one or more processors configured to receive the inspection data from the characterization subsystem. In another embodiment, the characterization system includes the controller, the controller including the one or more processors that determine one or more cleaning parameters based on the characterization data. In another embodiment, the characterization system includes the controller, the controller including one or more processors configured to direct one or more robotic assemblies to position a clean substrate on the fixture of the processing tool.

[0009] Disclose a method according to one or more embodiments of the present disclosure. In one embodiment, the method may include providing a clean substrate in a clean substrate cabinet. In another embodiment, the method may include moving the clean substrate from the clean substrate cabinet to a wafer chuck contained in a process chamber via a handling device. In another embodiment, the method may include using the clean substrate to clean the surface of the wafer, wherein one or more patterns are formed on the bottom side of the clean substrate. In another embodiment, when the clean substrate is positioned on the chuck, one or more structures within the one or more patterns attract one or more particles from the chuck via at least one of electrostatic attraction or mechanical trapping.

[0010] It should be understood that both the foregoing general description and the following detailed description are merely exemplary and explanatory and are not necessarily limiting of the invention as claimed. The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the general description are used to explain the principles of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Those skilled in the art can better understand the numerous advantages of the present disclosure by referring to the accompanying drawings, wherein:

[0012] Figure 1 A simplified schematic diagram illustrating a wafer processing system according to one or more embodiments of the present disclosure;

[0013] Figure 2A A simplified schematic diagram illustrating a process chamber depicting the processing of a wafer according to one or more embodiments of the present disclosure;

[0014] Figure 2B A simplified schematic diagram illustrating a process chamber depicting the incorporation of a cleaning assembly according to one or more embodiments of the present disclosure;

[0015] Figure 3A A simplified schematic diagram illustrating a cleaning assembly including a clean substrate according to one or more embodiments of the present disclosure;

[0016] Figure 3B A simplified schematic diagram illustrating a cleaning assembly including a clean substrate and a power supply according to one or more embodiments of the present disclosure;

[0017] Figure 3C A simplified schematic diagram illustrating a cleaning assembly including a clean substrate and a power supply according to one or more embodiments of the present disclosure;

[0018] Figure 3D A simplified schematic diagram illustrating a cleaning assembly including a clean substrate and a reservoir according to one or more embodiments of the present disclosure;

[0019] Figure 3ESimplified schematic illustration of a cleaning assembly including a cleaning substrate and a reservoir, according to one or more embodiments of the present disclosure;

[0020] Figure 3F Simplified schematic illustration of a cleaning assembly including a cleaning substrate and a reservoir, according to one or more embodiments of the present disclosure;

[0021] Figure 3G Simplified schematic illustration of a cleaning assembly including a cleaning substrate and a gas reservoir, according to one or more embodiments of the present disclosure;

[0022] Figure 4 Simplified top view of one or more patterns formed on a surface of a cleaning substrate, according to one or more embodiments of the present disclosure;

[0023] Figure 5 Flowchart depicting a method for using a wafer chuck of a cleaning assembly to clean a process tool, according to one or more embodiments of the present disclosure;

[0024] Figure 6 Simplified schematic illustration of a characterization system configured to guide the implementation of a wafer chuck for cleaning a process tool, according to one or more embodiments of the present disclosure;

[0025] Figure 7 Flowchart depicting a method for determining the cleaning efficiency of a cleaning substrate, according to one or more embodiments of the present disclosure;

[0026] Figure 8 Exemplary implementation of inspection and re-inspection driven cleaning efficiency determination, according to one or more embodiments of the present disclosure;

[0027] Figure 9 Flowchart depicting a method for characterizing triggered cleaning of a wafer chuck of a process tool, according to one or more embodiments of the present disclosure;

[0028] Figure 10 Simplified schematic illustration of an exemplary wafer transfer device, according to one or more embodiments of the present disclosure; and

[0029] Figure 11 Simplified top view of an exemplary wafer transfer device, according to one or more embodiments of the present disclosure. DETAILED DESCRIPTION

[0030] Reference will now be made in detail to the disclosed subject matter, which is illustrated in the accompanying drawings.

[0031] Generally referring to Figures 1 to 11 , an in-situ chuck cleaning system and method are described according to one or more embodiments of the present disclosure.

[0032] Embodiments of the present disclosure relate to an in-situ chuck cleaning system and method for cleaning process tool chucks. More particularly, the present disclosure relates to a cleaning substrate suitable for cleaning process tool chucks. The cleaning substrate may include one or more patterns formed on a surface of the cleaning substrate that attract particles from a process tool using at least one of electrostatic attraction, mechanical trapping, or the like. Embodiments of the present disclosure also relate to characterization-triggered cleaning of process tool chucks.

[0033] Figure 1 Describe a wafer processing system 100 according to one or more embodiments of the present disclosure. In one embodiment, the processing system 100 includes one or more process chambers 102 configured to perform one or more semiconductor manufacturing processes. For example, the one or more semiconductor manufacturing processes may include (but are not limited to) one or more lithography processes, such as substrate preparation, spin coating, pre-baking process, exposure process, post-exposure baking process, development process, post-baking process, or the like. For example, the one or more lithography processes may include (but are not limited to) patterning processes, etching processes, stripping processes, annealing processes, chemical mechanical planarization (CMP) processes, or the like. By another example, the one or more semiconductor manufacturing processes may include (but are not limited to) one or more film deposition processes. For example, the one or more film deposition processes may include (but are not limited to) chemical vapor deposition (CVD) processes, physical vapor deposition (PVD) processes, or the like. It should be noted herein that the processing system 100 may include one or more process chambers 102 having the same capabilities (e.g., performing the same manufacturing process) in order to enhance the processing capabilities of one or more process chambers 102 having different capabilities (e.g., performing different manufacturing processes).

[0034] In another embodiment, the processing system 100 includes one or more wafer transfer devices 104 (e.g., front opening unified pods (FOUPs)) configured to carry batches of wafers. It should be noted herein that for the purposes of the present disclosure, the terms "FOUP" and "wafer transfer device" may be used interchangeably unless otherwise noted herein. The use of wafer transfer devices is described in U.S. Patent Publication No. 2019 / 0295874, published on September 26, 2019, the entire content of which is incorporated herein by reference. Additionally, the use of wafer transfer devices is described in U.S. Patent No. 10,177,020, issued on January 8, 2019, the entire content of which is incorporated herein by reference.

[0035] In another embodiment, the processing system 100 includes a handling device 106. For example, the handling device 106 may be configured to receive a clean substrate cabinet 120 containing one or more clean substrates 216. By another example, the handling device 106 may also be configured to receive one or more FOUPs 104 containing a wafer lot (e.g., wafers 210). In another embodiment, the handling device 106 includes a robotic assembly 110 configured to extract at least one of the wafers 210 from a wafer lot in a FOUP 104 or the clean substrates 216 from the clean substrate cabinet 120. The processing system 100 may include any handling device 106 known in the art. For example, the processing system 100 may include an atmospheric handling device. For example, the atmospheric handling device may be at or near atmospheric pressure. By another example, the processing system 100 may include a vacuum handling device. For example, the vacuum handling device may be at or near a vacuum pressure. For the purposes of this disclosure, "vacuum pressure" is interpreted to mean any pressure below atmospheric pressure.

[0036] In another embodiment, the clean substrate cabinet 120 is configured to prepare one or more clean substrates 216 for operation (e.g., a cleaning process fixture 212). For example, the clean substrate cabinet 120 may prepare different clean substrates based on one or more parameters (e.g., particle size, particle material, or the like). For example, the clean substrate cabinet 120 may prepare a first clean substrate 216 for removing a first particle 214 on a first wafer 210. In a further example, the clean substrate cabinet 120 may prepare additional clean substrates 216 for removing additional particles 214 on the first wafer 210 and / or additional wafers 210.

[0037] In another embodiment, the clean substrate cabinet 120 is configured to clean the clean substrates 216 such that the clean substrates 216 may be configured for multiple cleaning cycles. For example, the clean substrate cabinet 120 may clean the clean substrates 216 using wet or dry cleaning methods. For example, the clean substrate cabinet 120 may utilize a dry cleaning method, such as carbon dioxide (CO2) snow cleaning. In a further example, the clean substrate cabinet 120 may utilize a wet cleaning method, such as megasonic cleaning.

[0038] As used throughout this disclosure, the term "wafer" refers to a substrate formed of semiconductor and / or non-semiconductor materials. For example, a semiconductor or semiconductor material may include (but is not limited to) single crystal silicon, gallium arsenide, and indium phosphide. Accordingly, the foregoing description should not be construed as a limitation on the scope of this disclosure but merely as illustrative.

[0039] In another embodiment, the processing system 100 includes a pre-align (P / A) module 108 configured to align the wafer 210 or clean the orientation of the substrate 216. For example, the P / A module 108 may include one or more optical sensors configured to detect notches on the surface (e.g., top side or bottom side) of the wafer 210 or clean substrate 216. After detecting the notch, the P / A module 108 can use any algorithm known in the art to locate the center of the wafer 210 or the center of the clean substrate 216.

[0040] In another embodiment, the processing system 100 includes a load lock device 114 configured to receive at least one of the wafer 210 or the clean substrate 216. The load lock device 114 can include any load lock device 114 known in the art, including (but not limited to) a vacuum load lock device, an atmospheric load lock device, or the like. For example, the load lock device 114 can be an atmospheric load lock device 114. For example, the atmospheric load lock device 114 can be configured to receive at least one of the wafer 210 or the clean substrate 216 when at or near atmospheric pressure (14.696 psi).

[0041] In another embodiment, the load lock device 114 containing at least one of the wafer 210 or the clean substrate 216 is configured to admit air until a sufficient pressure level is achieved. For example, the load lock device 114 can be configured to admit air until the load lock device 114 reaches a high vacuum pressure (e.g., 10 -5 to 10 -8 )).

[0042] Figure 2A A simplified schematic diagram of a process chamber 102 depicting the processing of a wafer 210 in accordance with one or more embodiments of the present disclosure. Figure 2B A simplified schematic diagram of a process chamber 102 depicting the incorporation of a cleaning assembly 300 in accordance with one or more embodiments of the present disclosure.

[0043] In another embodiment, the processing system 100 includes a handling device 112 configured to transport (e.g., deliver) at least one of the wafer 210 or the clean substrate 216 to a chuck 212 in one or more process chambers 102 via a robotic assembly 116.

[0044] In another embodiment, the robotic assembly 116 includes a robot 200 and an end effector 202. Although not shown, the robotic assembly 110 may also include a robot and an end effector. It should be noted herein that the robotic assemblies 110, 116 may include any type of robot known in the art. For example, the robotic assemblies 110, 116 may include at least one of an atmospheric robot or a vacuum robot. For example, the robotic assemblies 110, 116 may include at least one of an in-atmosphere internal rotation robot or a vacuum internal rotation robot.

[0045] It should be noted herein that the various systems and subsystems within the processing system 100 may share any number of components. For example, the system 100 may share one or more components of one or more of the robotic assemblies 110, 116. By another example, the system 100 may share one or more components of the processing devices 106, 112.

[0046] In another embodiment, the end effector 202 includes an edge gripper 204 that is configured to interact with at least one of a wafer 210 ( Figure 2A ) or a cleaning substrate 216 ( Figure 2B ) to remove at least one of the wafer 210 or the cleaning substrate 216 from the processing device 112 and insert at least one of the wafer 210 or the cleaning substrate 216 into one or more process chambers 102. For example, the edge gripper 204 may be configured to insert the wafer 210 into one or more process chambers 102 such that the one or more process chambers 102 may initiate one or more semiconductor manufacturing processes. By another example, the edge gripper 204 may be configured to insert the cleaning substrate 216 into one or more process chambers 102 after the fixture 212 contains one or more particles 214 to initiate the cleaning process described herein.

[0047] It should be noted herein that although Figure 2A the wafer 210 is depicted depositing one or more particles 214 onto the fixture 212, this depiction is provided for illustrative purposes only and should not be construed as limiting the scope of the present disclosure. For example, one or more walls of the process chamber 102 may deposit one or more particles 214 onto the fixture 212.

[0048] In another embodiment, the robotic assembly 116 is configured to remove at least one of the wafer 210 or the cleaning substrate 216 from one or more process chambers 102. For example, the edge gripper 204 of the end effector 202 may be configured to remove at least one of the wafer 210 or the cleaning substrate 216. For example, the edge gripper 204 may be configured to remove the wafer 210 from one or more process chambers 102 after one or more semiconductor manufacturing processes are completed. In a further example, the edge gripper 204 may be configured to remove the cleaning substrate 216 from one or more process chambers 102 after the fixture 212 has been cleaned (inFigures 3A to 3E After further discussion (as further described), the cleaned substrate 216 is removed from the one or more process chambers 102.

[0049] In another embodiment, the handling device 112 includes a door 206. In another embodiment, the door 206 includes an actuator 208 configured to open and close the door 206. For example, the actuator 208 can open the door 206 when the robotic assembly 116 is ready to remove and / or insert at least one of the wafer 210 or the cleaned substrate 216. By another example, the actuator 208 can close the door 206 when the robotic assembly 116 has completed removing and / or inserting at least one of the wafer 210 or the cleaned substrate 216. It should be noted herein that the door 206 can include any actuator 208 known in the art. For example, the door 206 can include a hydraulic actuator, an electric actuator, a mechanical actuator, or the like.

[0050] In another embodiment, the processing system 100 uses at least one of the robotic assembly 116 or the robotic assembly 110 to transfer at least one of the wafer 210 or the cleaned substrate 216 back to the FOUP 104. For example, the processing system 100 can transfer the wafer 210 back to the FOUP 104 via the robotic assemblies 110, 116 before transporting (e.g., delivering) the cleaned substrate 216 to the one or more process chambers 102. For example, the cleaned substrate 216 can be transported (e.g., delivered) to the one or more process chambers 102 after the wafer 210 is removed, such that the cleaned substrate 216 can remove one or more particles 214 from the fixture 212 in the one or more process chambers 102.

[0051] It should be noted herein that the conditions of the process chamber 102 can vary. For example, the process chamber 102 can have a temperature between 180°C and 520°C. For example, during chemical vapor deposition (CVD), the process chamber 102 can have a temperature between 420°C and 520°C. In another example, during etching, the process chamber 102 can have a temperature of at least 180°C. By another example, the process chamber 102 can have a vacuum level between 0 and 1.0 millitorr at the base pressure. By another example, the process chamber 102 can have a vacuum level between 0.5 millitorr and 100 torr at the process pressure. For example, during CVD, the process pressure can be 2.0 torr to 10.0 torr for 95% of the time and for 5% of the time, it can be no greater than 100 torr. In another example, during etching, the process pressure can be 0.5 millitorr to 400 millitorr for 95% of the time and for 5% of the time, it can be no greater than 400 millitorr.

[0052] In addition, it should be noted herein that the process chamber 102 can be configured to hold wafers and / or cleaning substrates of any size. For example, the process chamber 102 can be configured to hold a wafer 210 and / or a cleaning substrate 216 having a height between 1.0 and 10 mm. For example, the wafer 210 and / or the cleaning substrate 216 can have a height of 3.0 mm.

[0053] In one embodiment, the conditions of the process chamber 102 limit the amount of time that the cleaning substrate 216 and / or the wafer 210 can be maintained inside the process chamber 102. For example, the temperature of the process chamber 102 can limit the amount of time that the cleaning substrate 216 and / or the wafer 210 can be maintained inside the process chamber 102. The net radiant power (P) of the cleaning substrate 216 can be described by:

[0054] P = ∈σA s，r (T c 4 -T 4 ) Equation 1

[0055] In Equation 1, ∈ is the emissivity of the cleaning substrate; σ is the Boltzmann constant (5.67037×10 -8 watts / m 2 K 4 ); A s,r is the area of the emitter (e.g., the cleaning substrate 216); T is the temperature of the radiator (e.g., the cleaning substrate 216); and T c is the temperature of the environment (e.g., the process chamber 102). The heat (Q) gained or lost by the particle 214 can be described by:

[0056] Q = mC p ΔT Equation 2

[0057] In Equation 2, m is the mass of the particle; C p is the heat capacity of the particle; ΔT is the change in the temperature of the particle. The heat (P) transferred by radiation is equivalent to the heat transferred (Q), as shown by:

[0058] ∈σA s，r (T c 4 -T 4 ) = mC p ΔT Equation 3

[0059]

[0060] Solving Equation 3 and Equation 4 for t results in the time to failure (t) based on an approximate failure temperature (e.g., 130 °C).

[0061] Figures 3A to 3EDescribe a cleaning assembly 300 including a cleaning substrate 216 according to one or more embodiments of the present disclosure. In one embodiment, the cleaning assembly 300 includes a cleaning substrate 216 (as shown in Figure 2A and 2B . For example, the cleaning substrate 216 may include a ceramic wafer. By another example, the cleaning substrate 216 may include a substrate shaped as a semiconductor wafer. It should be noted herein that the size of the cleaning substrate 216 may vary to optimize the cleaning of the chuck 212 such that the cleaning substrate 216 can be handled as if it were a standard silicon wafer (e.g., wafer 210).

[0062] Figure 4 Describe a simplified top view of one or more patterns 302 formed on a surface (e.g., top side or bottom side) of the cleaning substrate 216 according to one or more embodiments of the present disclosure.

[0063] In another embodiment, one or more patterns 302 are formed on a surface (e.g., top side or bottom side) of the cleaning substrate 216. For example, one or more patterns 302 may be formed on the bottom side of the cleaning substrate 216. By another example, one or more patterns 302 may be formed on the top side of the cleaning substrate 216. It should be noted herein that one or more patterns 302 may be formed using any material known in the art suitable for withstanding the conditions of the process chamber 102 (e.g., temperature and other environmental conditions) during the cleaning process described herein. For example, carbon nanotubes (CNTs) may be deposited on a surface (e.g., top side or bottom side) of the cleaning substrate 216 to form one or more patterns 302 such that the van der Waal forces are amplified (e.g., to optimize the cleaning of the chuck 212), as described below:

[0064]

[0065]

[0066] In equations 5 to 6, H 12 is the Hamaker constant, R is the size of the particle 214, and d is the distance between the particle 214 and the CNTs deposited on the surface of the cleaning substrate 216. As shown by equation 6, when CNTs are deposited on the surface of the cleaning substrate 216, the van der Waal forces are enhanced due to an R 2 dependency relative to the R dependency in equation 5.

[0067] It should be noted herein that the stiffness and thermal stability of the CNT patterned layer (e.g., one or more patterns 302 formed by CNTs) of the cleaning substrate 216 produce a scrubbing effect that will grab particles without causing further contamination (e.g., breaking the particles). In addition, the use of CNTs enables the addition of electrical characteristics that will help attract particles, such asFigure 3B shown in

[0068] In another embodiment, the cleaning substrate 216 includes multiple pattern types 302. For example, the multiple pattern types 302 may include (but are not limited to) one or more pitches such that each pattern type is configured to attract one or more particles 214 having different sizes. For example, a single cleaning substrate (e.g., cleaning substrate 216) may have a first pattern 302 and a second pattern 302 such that the shape of the pattern 302 can optimally clean the fixture 212.

[0069] In another embodiment, when the cleaning substrate 216 is positioned on the fixture 212, one or more structures 402 within one or more patterns 302 attract one or more particles 214 from the fixture 212 via at least one of electrostatic attraction, mechanical trapping, or the like.

[0070] Referring Figure 3A , in another embodiment, one or more particles 214 are removed from the fixture 212 via electrostatic attraction. In this regard, one or more particles 214 on the surface 303 of the fixture 212 are charged by conduction and a high electric field is generated by the close proximity of the cleaning substrate 216. Additionally, one or more particles 214 experience a force (described below) that can exceed the adhesive force such that the one or more particles 214 move to the cleaning substrate 216 (e.g., the cleaning substrate 216 attracts the one or more particles 214). It should be noted herein that the one or more particles 214 charge more slowly on the cleaning substrate 216 such that the particles do not return to the fixture 212.

[0071] For example, the electrostatic attraction of the particles 214 can be caused by van der Waals forces. For example, when the cleaning substrate 216 is placed near the surface (e.g., top side or bottom side) of the fixture 212, the van der Waals (VDW) force removes the particles 214 from the surface (e.g., top side or bottom side) of the fixture 212 (e.g., the VDW force exceeds the adhesive force of the one or more particles 214). The sum of the van der Waals forces (F(s)) of the cleaning substrate 216 can be described as follows:

[0072]

[0073] In Equation 7, A is the Hamaker constant, S is the separation between the particle and the surface of the cleaning substrate (neglecting dipole-induced effects), R is the radius of the particle, and the minus sign (-) describes the fact that the force is attractive. For example, A may be 1.40×10 -19 Joules (J), R may be 5.00×10 -6 m, and S may be 4.00×10 -10 m such that the van der Waals force (F(s)) may be approximately -7.29×10 -7 N. In this regard, gravity (e.g., ~10-11 N) can be neglected. The Lifshitz - van der Waals formula (F(s)) that takes into account the surface roughness of one or more particles can be described as follows:

[0074]

[0075] In Equation 8, r a is the radius of curvature of the surface, h is the Lifshitz - van der Waals constant (expressed in energy units), and S is the separation between the surface of the particle and the clean substrate.

[0076] In another embodiment, one or more particles 214 are removed from the clean substrate 216 by magnetic force. For example, the magnetic force is generated by the interaction of magnetic dipoles in one or more particles 214 and in the clean substrate 216. The general form of the magnetic force (F m ) can be described as follows:

[0077]

[0078]

[0079] Then,

[0080] In Equations 9 to 11, m is the magnetic dipole, is the gradient, and H is the magnetic field. In Equations 10 to 11, m1 and m2 are the magnetic dipoles of the particle and the clean substrate, respectively. Additionally, in Equation 10, is the unit vector in the direction pointing to r. Assuming that the dipoles m1 and m2 are oriented along the Z - axis, then the mutual force (F z ) can be described as follows:

[0081]

[0082] In Equation 12, for iron particles with a diameter (Z) of and magnetized to saturation (m ∼ 10 -15 emu) and separated by a distance (Z) of , the resulting force (F z ) can be approximately 5.00×10 -11 N. In this regard, the rate of change of the force can be approximately 2.00×10 -2 N / m.

[0083] Reference Figure 3B and 3C, in another embodiment, the cleaning assembly 300 includes a power source 306. The power source 306 can include any power source known in the art. For example, the power source 306 can include a direct current (DC) power source. For example, the DC power source can include one or more batteries (such as nickel-metal hydride batteries, lithium-ion batteries, lithium-ion polymer batteries, sodium-ion batteries, or the like). By another example, the power source 306 can include an alternating current (AC) power source.

[0084] Reference Figure 3B , in another embodiment, the cleaning assembly 300 includes a conductor element 304 attached to the top side of the substrate 216. The conductor element 304 can include any conductor element known in the art. For example, the conductor element 304 can include an electrode. For example, the conductor element 304 can include a metal layer or coating containing at least one of aluminum (Al), gold (Au), copper (Cu), or the like. In another embodiment, the power source 306 is electrically coupled to the conductor element 304. In another embodiment, the fixture 212 is conductive and connected to ground 308. In this regard, the cleaning assembly 300 is in a capacitor configuration such that the conductor element 304 and the fixture 212 act as electrodes and are separated by a dielectric (such as the cleaning substrate 216). The power source 306 can be located on the cleaning substrate 216. For example, one or more batteries can be located on the top side of the conductor element 304 and electrically coupled to the conductor element 304.

[0085] It should be noted herein that the fixture 212 of the cleaning assembly 300 is not limited to a conductive fixture. For example, the cleaning assembly 300 can include a non-conductive fixture. Therefore, the above description should not be construed as a limitation on the scope of the present disclosure but only as an illustration.

[0086] Reference Figure 3C , in another embodiment, the cleaning assembly 300 includes one or more anode / cathode pairs arranged in a horizontal configuration. For example, for each pair, an electric field can be established between the cathode and the anode. The electric field assists in sucking particles from the surface of the fixture 212.

[0087] In another embodiment, the power source 306 is configured to establish an electric field between the conductor element 304 and the fixture 212. In another embodiment, the power source 306 is configured to establish an electric field between the anode / cathode and the fixture 212. For example, the power source 306 can be configured to establish an electric field between 0.1 kV and 5 kV. For example, the power source 306 can be configured to establish an electric field of 2.5 kV. It should be noted herein that the electric field enhances the electrostatic-based sucking of charged particles (such as one or more particles 214) from the fixture 212. The electrostatic force (F e ) of the cleaning substrate can be described as follows:

[0088]

[0089] In Equation 13, ε0 is the permittivity (e.g., for a vacuum ε0 = 1), ε r is the dielectric coefficient (e.g., for a vacuum ε r = 8.85 x 10 -12 F / m), A e is the effective area of the particle (m 2 2), V is the voltage difference (in volts) between the particle and the electrode, and h is the gap (in meters) between the particle and the electrode. For example, V can be 5.00 x 10 2 volts such that the electrostatic force (F e ) is 3.48 x 10 -6 N. In this regard, the gravitational force (e.g., ~10 -11 N) can be negligible such that the cleaning substrate 216 can remove one or more particles 214 from the fixture 212.

[0090] Reference Figures 3E to 3F , in another embodiment, the cleaning assembly 300 includes one or more reservoirs 310 disposed within the cleaning substrate 216. It should be noted herein that Figures 3C to 3E the size, location, and shape of the one or more reservoirs 310 depicted in

[0091] are illustrative only and should not limit the scope of the present disclosure.

[0092] Reference Figure 3E , in another embodiment, the cleaning assembly 300 includes one or more valves 312 configured to release one or more reactants. It should be noted herein that the one or more reactants can include any reactants known in the art suitable for cleaning the fixture. For example, the one or more reactants can include one or more reactant groups. For example, the one or more reactant groups can include at least one of atmospheric oxygen, fluorine, nitrogen, or the like.

[0093] Reference Figure 3E and 3F , in another embodiment, the one or more reservoirs 310 are configured to release one or more reactants after being exposed to a thermal shock.

[0094] In another embodiment, one or more reservoirs 310 include a shape memory alloy actuator 314 configured to activate one or more valves 312 after being exposed to a thermal shock. For example, the shape memory alloy actuator 314 can be configured to open one or more valves 312 based on a change in temperature of the shape memory alloy actuator 314. For example, the shape memory alloy actuator 314 is configured to undergo a shape deformation after a threshold transition temperature and return to its original shape after being heated to a temperature above the threshold transition temperature. It should be noted herein that the threshold transition temperature can be between room temperature (e.g., 23 °C) and 520 °C.

[0095] It should be noted herein that the shape memory alloy actuator 314 can be formed of any alloy known in the art, including (but not limited to) any alloy of nickel-titanium alloy (nitinol), copper-iron alloy, or the like. For example, the shape memory alloy actuator 314 can include a nitinol actuator such that when such leakage is undesirable, the nitinol actuator reduces the risk of leakage of a chemical reactor.

[0096] Reference Figure 3G , in another embodiment, the cleaning assembly 300 includes a gas reservoir 316 configured to contain one or more gases. The gas reservoir 316 can contain any gas known in the art, including (but not limited to) argon or the like.

[0097] In another embodiment, the cleaning assembly 300 includes one or more tunnels 318 disposed within the cleaning substrate 216. It should be noted herein that Figure 3G the size, location, and shape of the one or more tunnels 318 depicted in

[0098] are merely illustrative and should not limit the scope of the present disclosure.

[0099] The Reynolds number (R e )(Equation 14) can be used to predict the flow pattern of one or more gases. For example, a low (e.g., 10 - 10 3 ) Reynolds number (R e ) indicates laminar flow in the tunnel. By another example, a high (e.g., greater than 10 3 ) Reynolds number (R e ) indicates turbulent flow in the tunnel. The Reynolds number (R e ) can be described as follows:

[0100]

[0101]

[0102] In Equation 14, L is the linear dimension (m); U is the velocity of the fluid relative to the particle (m / s); ρ is the density of the fluid (kg / m 3 ³); and μ is the dynamic viscosity of the fluid (Pa s). For example, when using argon, L = 50 m, μ = 4.64×10 -5 Pa s (at 500 °C or 773 K), ρ = 1.6172 kg / m 3 (at 2.6 atm) and U(v2) = 570 m / s (solved using Equation 15), such that R e = 0.993×10 6 . In this regard, a high Reynolds number indicates that the flow of the gas in the tunnel is turbulent. The drag force (F D )(e.g., the force component in the direction of the flow velocity) can be described as follows:

[0103]

[0104] In Equation 16, ρ is the mass density of the fluid; u is the flow velocity relative to the object; A is the reference area; and C D is the drag coefficient. It should be noted herein that the drag coefficient (C D ) depends on the Reynolds number R e (as shown in Equation 14). For example, ρ = 1.6172 kg / m 3 (at 2.6 atm), u = 570 m / s, C D = 0.1 (for a smooth sphere when R e = 10 6 ), A = 7.853×10 -11 m 2 , such that F D = 2.06×10 -6 N. The relationship between the drag force (F D ) and particle removal (e.g., accumulator pressure, P D ) can be described as follows:

[0105]

[0106] where

[0107]

[0108] For example, particle removal and accumulator pressure (P D) is proportional to the particle size (A). For example, it may be necessary to increase the initial pressure to accurately remove the particles. It should be noted herein that although the above calculations (Equations 14 to 19) assume a pressure of 2.6 atm, this pressure is provided for illustrative purposes only and should not limit the scope of the present disclosure.

[0109] It should be noted herein that one or more particles 214 can be of any size known in the art. For example, one or more particles can be between 0 and 1.0 μm. For example, one or more particles can be 0.019 μm. Additionally, it should be noted herein that one or more particles 214 can be any type of particle known in the art, including (but not limited to) airborne molecular contamination (AMC), metals, or the like. For example, one or more particles 214 can be a metal (Al, Cu, or the like), fluorinated rubber (e.g., O-ring), grease, metal oxide, oxide film, bare silicon (Si), thermal oxide, nitride film, PR, Si, fluorine deposition, quartz, or the like.

[0110] Furthermore, it should be noted herein that the process chamber 102 can have various chemical residues on the walls of the process chamber 102. For example, during CVD, the chamber walls can have halide residues (e.g., HCl, HI, F, or the like). By another example, during etching, the chamber walls can have residues containing at least one of the following: C, O, F, Al, Y, Fe, Na, Ti, Zr, or the like.

[0111] Figure 5 The flowchart illustrates a method 500 for using the cleaning assembly 300 to clean the chuck 212 of the processing tool 100 in accordance with one or more embodiments of the present disclosure. It should be noted herein that the steps of method 500 can be implemented in whole or in part by the system 100. However, it should be further recognized that method 500 is not limited to system 100, where additional or alternative system-level embodiments can implement all or part of the steps of method 500.

[0112] In step 502, a cleaning substrate is provided in the cleaning substrate cabinet. In another embodiment, the cleaning substrate cabinet 120 is configured to store (e.g., mount) one or more cleaning substrates 216 in the cabinet 120 and prepare the one or more cleaning substrates 216 for an optimal cleaning process.

[0113] In step 504, the cleaning substrate is moved from the cleaning substrate cabinet 120 onto the wafer chuck 212 contained within the process chamber 102. In another embodiment, one or more robot assemblies 110 are configured to remove the cleaning substrate 216 from the cleaning substrate cabinet 120 to initiate the cleaning process. For example, the edge gripper 204 of the robot assembly 110 can interact with the cleaning substrate 216 to remove the cleaning substrate 216 from the cleaning substrate cabinet 120.

[0114] In another embodiment, one or more robot assemblies are configured to position a cleaning substrate 216 near a chuck 212 of one or more process tools 100. For example, after removing the cleaning substrate 216 from the cleaning substrate cabinet 120 via the robot assembly 110, the robot assembly 110 can transport (e.g., deliver) the cleaning substrate to the robot assembly 116 of the handling device 112. By another example, the robot assembly 116 can insert the cleaning substrate 216 into the process chamber 102 of the process tool 100.

[0115] In step 506, the surface 303 of the wafer chuck is cleaned using a cleaning substrate. The chuck 212 can be cleaned using at least one of electrostatic attraction, mechanical trapping, or the like (as Figures 3A to 3E shown).

[0116] Figure 6 Simplified schematic illustration of a characterization system 600 configured to direct the implementation of a wafer chuck 212 of a cleaning process tool 100 in accordance with one or more embodiments of the present disclosure.

[0117] Generally referring Figure 6 , in one embodiment, the system 600 includes one or more process tools 100 (e.g., Figure 1 the processing system 100 shown), a controller 602, and one or more characterization tools 604.

[0118] In another embodiment, one or more characterization tools 604 (e.g., a characterization subsystem) include one or more inspection tools. For example, one or more inspection tools may include (but are not limited to) optical characterization tools. For example, an optical characterization tool may include an optical characterization tool capable of generating one or more high-resolution images representative of the electrical intent of the wafer 210 and capable of operating at wavelengths corresponding to (but not limited to) visible light, ultraviolet (UV) radiation, deep ultraviolet (DUV) radiation, vacuum ultraviolet (VUV) radiation, extreme ultraviolet (EUV) radiation, and / or X-ray radiation. Additionally, an optical characterization tool may include a broadband inspection tool, including (but not limited to) a laser sustained plasma (LSP)-based inspection tool. Further, an optical characterization tool may include a narrowband characterization tool, such as (but not limited to) a laser scan inspection tool. The description of inspection tools is described in U.S. Patent No. 8,559,001, issued on October 15, 2013, the entire content of which is incorporated herein by reference. Additionally, the description of inspection tools is described in U.S. Patent No. 9,170,209, issued on October 27, 2015, the entire content of which is incorporated herein by reference. Further, the description of inspection tools is described in U.S. Patent No. 8,749,149, issued on June 10, 2014, the entire content of which is incorporated herein by reference. Additionally, the description of inspection tools is described in U.S. Patent No. 8,941,336, issued on January 27, 2015, the entire content of which is incorporated herein by reference.

[0119] In another embodiment, one or more characterization tools 604 include one or more re-inspection tools. For example, one or more characterization tools 604 include one or more particle beam re-inspection tools. For example, one or more particle beam re-inspection tools may include (but are not limited to) electron-beam (e-beam) tools. The description of particle beam re-inspection tools is described in U.S. Patent Application No. 16 / 163,263, filed on October 17, 2018, the entire content of which is incorporated herein by reference. Additionally, the description of particle beam re-inspection tools is described in U.S. Patent Application No. 16 / 564,981, filed on September 9, 2019, the entire content of which is incorporated herein by reference.

[0120] In another embodiment, system 600 includes a controller 602 that includes one or more processors. In another embodiment, controller 602 is operatively coupled to one or more components of system 600. For example, controller 602 is operatively coupled to one or more process tools 100, one or more characterization tools 604, and / or one or more additional components. In this regard, controller 602 can direct any component of system 600 and / or any component of one or more process tools 100, one or more characterization tools 604, and / or one or more additional components to perform any one or more of the various functions described throughout this disclosure.

[0121] In another embodiment, system 600 can include a controller 602 communicatively coupled to a server via a network. In another embodiment, controller 602 includes one or more processors and a memory. In another embodiment, the one or more processors can be configured to execute a set of program instructions stored in the memory, where the set of program instructions is configured to cause the one or more processors to perform the steps of this disclosure. It should be noted herein that the discussion herein regarding the server, the one or more processors, and the memory can also be considered applicable to controller 602, the one or more processors, and the memory, except as otherwise noted herein.

[0122] It should be noted herein that one or more components of system 600 can be communicatively coupled to various other components of system 600 in any manner known in the art. For example, the one or more processors can be communicatively coupled to each other and to other components via a wired connection (e.g., copper wire, fiber optic cable, and the like) or a wireless connection (e.g., RF coupling, IR coupling, data network communication (e.g., WiFi, WiMax, Bluetooth, and the like)).

[0123] In one embodiment, one or more processors may include any one or more processing elements known in the art. In this sense, one or more processors may include any microprocessor-type device configured to execute software algorithms and / or instructions. In one embodiment, one or more processors may consist of a desktop computer, a main computer system, a workstation, an image computer, a parallel processor, or other computer systems (e.g., network computers) configured to execute a program (which is configured to operate system 600), as described throughout this disclosure. It should be recognized that the steps described throughout this disclosure may be implemented by a single computer system or alternatively by multiple computer systems. Additionally, it should be recognized that the steps described throughout this disclosure may be implemented on any one or more of the one or more processors. Generally, the term "processor" may be broadly defined to encompass any device having one or more processing elements that execute program instructions from memory. Additionally, different subsystems of system 600 may include processors or logic elements suitable for implementing at least a portion of the steps described throughout this disclosure. Accordingly, the foregoing description should not be construed as a limitation on this disclosure but merely as illustrative.

[0124] The memory may include any storage medium known in the art suitable for storing program instructions executable by the associated one or more processors and data received from the transmission device. For example, the memory may include non-transitory memory media. For example, the memory may include (but is not limited to) read-only memory (ROM), random access memory (RAM), magnetic or optical memory devices (e.g., disks), magnetic tapes, solid state disks, and the like. In another embodiment, the memory is configured to store data received from the transmission device, including (but not limited to) physical data, association data (e.g., spatial relationship data), operational data, GPS data, timestamp data, geographical fence data, and the like. It should be further noted that the memory may be housed together with the one or more processors in a common controller housing. In an alternative embodiment, the memory may be remotely located relative to the physical location of the processor, server, controller, and the like. In another embodiment, the memory maintains program instructions for causing the one or more processors to implement the various steps described throughout this disclosure.

[0125] Figure 7 A flowchart illustrating method 700 of using a characterization system to collect characterization data for determining the cleaning efficiency of a cleaned substrate 216 in accordance with one or more embodiments of the present disclosure. Figure 8 Illustrating in accordance with one or more embodiments of the present disclosure Figure 7Exemplary illustration of one or more steps of method 700 shown herein. It should be noted herein that the steps of method 700 may be implemented in whole or in part by system 600. However, it should be further recognized that method 700 is not limited to system 600, where additional or alternative system-level embodiments may implement all or part of the steps of method 700.

[0126] In step 702, the surface of the clean substrate 216 is inspected via one or more inspection tools and pre-clean inspection data is generated as illustrated in Figure 8 view 802. For example, the inspection tool may be configured to inspect the surface of the clean substrate 216 to generate pre-clean inspection data regarding the surface of the clean substrate 216. For example, the pre-clean inspection data may include information regarding one or more patterns 302 of the clean substrate 216.

[0127] In step 704, one or more particles 214 on the surface 303 of the wafer chuck 212 are removed via the clean substrate 216, as illustrated in Figure 8 view 804. For example, the clean substrate 216 may remove one or more particles 214 from the surface 303 of the chuck 212 when positioned near the surface 303 of the chuck 212.

[0128] In step 706, the surface of the clean substrate 216 is inspected via one or more inspection tools and post-clean inspection data is generated as illustrated in Figure 8 view 806. In another embodiment, one or more inspection tools are configured to generate post-clean inspection data based on inspection of the surface of the clean substrate 216. For example, one or more inspection tools are configured to detect one or more particles 214 on the clean substrate removed from the chuck 212 during the process chamber cleaning step 614. The inspection data may include information regarding the location, size, and material of one or more particles 214 on the clean substrate 216.

[0129] In another embodiment, the inspection tool is configured to compare the inspection data from step 702 and step 706, respectively. For example, the inspection tool may compare the total signal sum reflected from the clean substrate 216 such that any difference will indicate a cleaning action. By another example, the clean substrate 216 may have a known pattern (e.g., columns or circles at a specific pitch). For example, the inspection tool may compare across regions of the clean substrate 216 and detect any deviation from the known pattern (e.g., columns or circles at a specific pitch) identified during step 702.

[0130] In optional step 708, one or more particles 214 on the surface of the clean substrate 216 are re-inspected via one or more particle re-inspection tools and particle re-inspection data is generated, as illustrated in Figure 8is illustrated in view 808. For example, one or more particle re-inspection tools may image the surface of the cleaned substrate 216 to capture images of one or more defects on the surface of the cleaned substrate 216. For example, one or more particle re-inspection tools may capture images of one or more particles on the surface of the cleaned substrate 216. The particle re-inspection data may include more detailed information about the location, size, and / or material of one or more particles 214 than the post-clean inspection data. In this regard, the particle re-inspection data may be used to prepare the cleaned substrate 216 for optimal cleaning. For example, the particle re-inspection data may be used to determine one or more patterns 302 of the cleaned substrate 216 to optimize the cleaning of the chuck 212.

[0131] Figure 9 The figure depicts a flowchart of a method 900 for characterizing-triggered cleaning of a wafer chuck 212 of a process tool 100 in accordance with one or more embodiments of the present disclosure. It should be noted herein that the steps of method 900 may be implemented, in whole or in part, by system 600. However, it should be further recognized that method 900 is not limited to system 600, where additional or alternative system-level embodiments may implement all or part of the steps of method 900.

[0132] In step 902, one or more process tools 100 of system 600 perform one or more semiconductor manufacturing processes on the wafer 210. The wafer 210 may deposit one or more particles 214 onto the chuck 212 during one or more semiconductor manufacturing processes. Additionally, one or more walls of the process chamber 102 of the process tool 100 may deposit one or more particles 214 onto the chuck 212.

[0133] In step 904, at least one of the wafer 210 or the cleaned substrate 216 is transported (e.g., delivered) to one or more characterization tools 604 of system 600 via one or more robotic assemblies of the processing tool 100. For example, the cleaned substrate 216 may be transported to at least one of one or more inspection tools or one or more particle re-inspection tools. By another example, the wafer 210 may be transported to at least one of one or more inspection tools or one or more particle re-inspection tools.

[0134] In step 906, one or more characterization tools 604 of system 600 are used to characterize the surface of at least one of wafer 210 or the cleaning substrate. In another embodiment, one or more characterization tools 604 include one or more inspection tools. For example, one or more inspection tools can be used to inspect the bottom side of at least one of wafer 210 or the cleaning substrate. By another example, one or more inspection tools can be used to inspect the top side of at least one of wafer 210 or cleaning substrate 216. In another embodiment, one or more characterization tools 605 include one or more particle re-inspection tools. For example, one or more particle re-inspection tools can be used to re-inspect the bottom side of at least one of wafer 210 or cleaning substrate 216. By another example, one or more particle re-inspection tools can be used to re-inspect the top side of at least one of wafer 210 or cleaning substrate 216.

[0135] In step 908, one or more characterization tools 604 generate characterization data (e.g., inspection data or particle re-inspection data) based on the inspection or re-inspection of the surface of at least one of wafer 210 or the cleaning substrate. For example, one or more characterization tools 604 can generate inspection data based on the inspection of the surface of at least one of wafer 210 or the cleaning substrate using one or more inspection tools. By another example, one or more characterization tools 604 can generate particle re-inspection data based on the re-inspection of the surface of at least one of wafer 210 or the cleaning substrate. In another embodiment, one or more characterization tools 604 are communicatively coupled to controller 602 such that one or more processors of controller 602 receive characterization data (e.g., inspection data or particle re-inspection data) from one or more characterization tools 604. Characterization data (e.g., inspection data) can include information about the location, size, and material of one or more particles 214 on surface 303 of wafer 210 or cleaning substrate 216.

[0136] In step 910, controller 602 causes one or more processors to determine one or more cleaning parameters based on the characterization data (e.g., inspection data or particle re-inspection data). In another embodiment, controller 602 receives characterization data (e.g., inspection data or particle re-inspection data) from one or more characterization tools 604 and causes one or more processors to initiate one or more cleaning parameters. One or more cleaning parameters can include at least one of the preparation of cleaning substrate 216, the start of a cleaning cycle, the orientation of cleaning substrate 216, or the like. For example, one or more processors of controller 602 can trigger one or more process tools 100 to initiate Figures 1 to 5The cleaning process described in [reference]. By another example, at least one of inspection data or particle re-inspection data is used to determine the orientation of the cleaning substrate 216 for optimal cleaning efficacy. For example, one or more processors of the controller 602 may trigger the P / A module 108 of the handling device 106 to orient the cleaning substrate 216 in the optimal orientation based on at least one of inspection data or particle re-inspection data. By an additional example, at least one of inspection data or particle re-inspection data may be used to control one or more additional cleaning parameters to ensure that the process tool 100 optimally cleans the chuck 212.

[0137] In step 912, the controller 602 causes one or more processors to direct one or more robot assemblies to position the cleaning substrate 216 into the chuck 212 of the process tool 100. For example, the robot assembly 110 may transport (e.g., deliver) the cleaning substrate 216 to the robot assembly 116 of the handling device 112. For example, once the door 206 is opened, the robot assembly 116 of the handling device 112 may insert the cleaning substrate 216 into the process chamber 102 of the process tool 100.

[0138] In step 914, the cleaning substrate 216 removes one or more particles 214 from the chuck 212 via at least one of electrostatic attraction, mechanical trapping, or the like.

[0139] In step 916, one or more robot assemblies remove the cleaning substrate 216 from the process tool 100 and transfer the cleaning substrate 216 back to the cleaning substrate cabinet 120. For example, the robot assembly 116 may remove the cleaning substrate 216 from the process chamber 102 of the process tool 100 and insert the cleaning substrate 216 into the handling device 114. By another example, the robot assembly 110 may remove the cleaning substrate 216 from the handling device 114 and transfer the cleaning substrate back to the cleaning substrate cabinet 120.

[0140] It should be noted herein that one or more inspection tools and / or one or more particle re-inspection tools of the system 600 may perform a single function or multiple functions. For example, a first inspection tool may be configured to inspect the surface on the wafer 210, while a second inspection tool may be configured to inspect the surface of the cleaning substrate 216. By another example, an inspection tool may be configured to inspect the surface of the wafer 210 and the surface of the cleaning substrate 216. Further for example, a first re-inspection tool may be configured to re-inspect the surface on the wafer 210, while a second re-inspection tool may be configured to re-inspect the surface of the cleaning substrate 216. By another example, a particle re-inspection tool may be configured to re-inspect the surface of the wafer 210 and the surface of the cleaning substrate 216.

[0141] Figure 10 A simplified schematic diagram illustrating a wafer transfer device 104 according to one or more embodiments of the present disclosure. Figure 11A simple top view of a wafer handling apparatus 104 in accordance with one or more embodiments of the present disclosure is illustrated.

[0142] In one embodiment, the wafer handling apparatus 104 includes an imaging system 1006 arranged to detect one or more particles 214 on a wafer 210. In another embodiment, the imaging system 1006 includes a light source 1008 configured to generate a collimated beam. For example, the wafer handling apparatus 104 may include an LED projector 1008 configured to generate a collimated beam. In another embodiment, the optics of the imaging system 1006 are configured to direct the collimated beam 1009 onto the surface of the wafer 210, thereby illuminating light reflected, scattered, diffracted, or emitted from one or more particles 214 or the wafer 210.

[0143] In another embodiment, the imaging system 1006 includes an objective lens 1010 configured to collect light 1009 emitted (e.g., reflected, scattered, diffracted, or emitted) from the particles 214. In another embodiment, the imaging system 1006 includes a detector 1011 (e.g., a CCD detector). For example, the imaging system 1006 and the detector 1011 of the imaging system 1006 may be arranged in a dark field configuration. For example, dark field imaging may detect one or more particles 214 axially or outside the lens. For example, dark field imaging may detect one or more particles 214 having a size from 0 to 1.0 μm. It should be noted herein that the objective lens 1010 may be at any distance from the wafer 210. For example, the objective lens 1010 may be 100 mm from the surface of the wafer 210.

[0144] In one embodiment, the wafer handling apparatus 104 includes a rotating stage 1002 configured to rotate the wafer 210 about a z-axis (e.g., up and down). For example, the rotating stage 1002 may include a rotating stage configured to rotate the wafer about a z-axis such that one or more particles 214 are ready for imaging. In another embodiment, the wafer handling apparatus 104 includes a linear stage 1004 configured to scan the surface (e.g., top side or bottom side) of the wafer 210. For example, the linear stage 1004 may be configured to translate the imaging system 1006 along the surface of the wafer 210 in order to scan the bottom side of the wafer 210 to detect one or more particles 214. Using the rotating stage 1002 and the linear stage 1004, the entire wafer 210 can be scanned. For example, as Figure 11 shown, the rotating mechanism 1002 can rotate the wafer 210 a selected distance such that the linear stage 1004 can translate the imaging system 1006 along a scan line. In this regard, the rotating mechanism 1002 can rotate the wafer 210 until the entire wafer 210 is scanned by the imaging system 1006.

[0145] In another embodiment, the wafer handling device 104 includes a main module 1012. In another embodiment, the main module includes a power supply 1014 configured to charge the cleaning substrate 216 before each activation. It should be noted herein that the power supply 306 ( Figure 3B discussed in) may share one or more components with Figure 10 the power supply 1014. In another embodiment, the main module 1012 includes a charging mechanism 1020 configured to supply power to the wafer handling device 104. The charging mechanism 1020 may include any charging mechanism known in the art, including (but not limited to) a battery. It should be noted herein that the power supply 1014 and the charging mechanism 1020 may share one or more components.

[0146] In another embodiment, the main module 1012 includes a cleaning mechanism 1016 (e.g., cleaning assembly 300) configured to remove one or more particles 214 using an electrostatic field. For example, the wafer handling device 104 may include an electrostatic field generator 1022 such that the cleaning substrate 216 can remove one or more particles 214 using an electrostatic field.

[0147] In another embodiment, the main module 1012 includes a computing engine 1018 (e.g., one or more processors) configured to collect, process, or transmit at least one of data. For example, the computing engine 1018 (e.g., one or more processors) may be configured to perform image processing. By another example, the computing engine 1018 (e.g., one or more processors) may be configured to execute one or more algorithms. The data may include one or more characteristics of the surface of the particles 214 and / or the wafer 210. For example, the data may include information about the size, location, material, or the like of the particles 214. The computing engine (e.g., one or more processors) may include any computing engine known in the art, including (but not limited to) a microprocessor.

[0148] Those skilled in the art will recognize that the components, devices, objects, and their discussions described herein are used as examples for clarity of concept and cover various configuration modifications. Thus, as used herein, the specific examples and their discussions set forth are intended to represent their more general classes. In general, the use of any specific example is intended to represent its class, and specific components, devices, and objects not included should not be considered restrictive.

[0149] Regarding the use of substantially any plural and / or singular terms herein, those skilled in the art may translate the plural to the singular and / or the singular to the plural depending on the context and / or the needs of the application. For clarity, various singular / plural permutations are not explicitly stated herein.

[0150] The subject matter described herein sometimes illustrates different components that are contained within or connected to other components. It should be understood that such depicted architectures are merely exemplary, and in fact, many other architectures that achieve the same functionality can be implemented. In a conceptual sense, any arrangement of components that achieves the same functionality is effectively "associated" such that the desired functionality is achieved. Thus, any two components that are combined herein to achieve a particular functionality can be considered to be "associated" with each other such that the desired functionality is achieved regardless of the architecture or intermediate components. Similarly, any two components so associated can also be considered to be "connected" or "coupled" to each other to achieve the desired functionality, and any two components that can be so associated can also be considered to be "couplable" to each other to achieve the desired functionality. Particular instances of couplable include, but are not limited to, components that can physically mate and / or physically interact and / or components that can wirelessly interact and / or wirelessly interact and / or logically interact and / or components that can logically interact.

[0151] The foregoing description is presented to enable a person of ordinary skill in the art to make and use the invention as provided in the context of a particular application and its requirements. As used herein, directional terms such as "top", "bottom", "above", "below", "upper", "upward", "lower", "beneath", and "downward" are intended to provide relative positions for purposes of description and are not intended to specify an absolute reference frame. Those skilled in the art will recognize various modifications to the described embodiments, and the general principles defined herein can be applied to other embodiments. Thus, the invention is not intended to be limited to the particular embodiments shown and described, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0152] In addition, it should be understood that the present invention is defined by the appended claims. Those skilled in the art will understand that, generally speaking, the terms used herein and especially the terms used in the appended claims (e.g., the body of the appended claims) are generally intended to be "open" terms (e.g., the term "including" should be interpreted as "including but not limited to", the term "having" should be interpreted as "having at least", the term "includes" should be interpreted as "includes but not limited to", and the like). Those skilled in the art should further understand that if a specific number of claim recitations is intended to be introduced, then this intention will be expressly recited in the claims, and if there is no such recitation, then there is no such intention. For example, as an aid to understanding, the following appended claims may contain the use of introductory phrases "at least one" and "one or more" to introduce claim recitations. However, the use of such phrases should not be construed as implying that a claim recitation introduced by the indefinite article "a" limits any particular claim containing such introduced claim recitation to only the invention containing such recitation, even if the same claim contains an introductory phrase "one or more" or "at least one" and an indefinite article such as "a" (e.g., "a" should generally be interpreted as meaning "at least one" or "one or more"); the above also applies to the use of definite articles for introducing claim recitations. Additionally, even if a specific number of claim recitations is expressly recited, those skilled in the art should also recognize that such recitation generally should be interpreted as meaning at least the recited number (e.g., the basic recitation of "two recitations" (without other modifiers) generally means at least two recitations or two or more recitations). Further, in the examples where conventional expressions such as "at least one of A, B, and C and the like" are used, such constructions generally mean the meaning of the conventional expressions understood by those skilled in the art (e.g., "a system having at least one of A, B, and C" will include (but not be limited to) a system having only A, only B, only C, A and B simultaneously, A and C simultaneously, B and C simultaneously, and / or A, B, and C simultaneously, and so on). In the examples where conventional expressions such as "at least one of A, B, or C and the like" are used, such constructions generally mean the meaning of the conventional expressions understood by those skilled in the art (e.g., "a system having at least one of A, B, or C" will include (but not be limited to) a system having only A, only B, only C, A and B simultaneously, A and C simultaneously, B and C simultaneously, and / or A, B, and C simultaneously, and so on). Those skilled in the art should further understand that, regardless of whether in the embodiments, claims, or drawings, virtually any conjunctive and / or phrase presenting two or more alternatives should generally be understood to encompass the possibilities of including one of the items, any one of the items, or both.For example, the phrase "A or B" will generally be understood to encompass the possibilities of "A" or "B" or "A and B".

[0153] It is believed that the present disclosure and many of its attendant advantages will be understood from the foregoing description, and it will be apparent that various changes may be made in the form, construction and arrangement of the components without departing from the disclosed subject matter or sacrificing all of its material advantages. The described form is merely illustrative, and the appended claims are intended to cover and embrace such changes.

Claims

1. A cleaning assembly, comprising: a substrate on which one or more patterns are formed on a bottom side thereof, wherein when the substrate is positioned on a conductive fixture, one or more structures within the one or more patterns attract one or more particles from the conductive fixture via at least electrostatic attraction; one or more batteries; and a conductor element attached to a top side of the substrate, wherein the one or more batteries are electrically coupled to the conductor element, wherein the one or more batteries are configured to establish an electric field between the conductor element and the conductive fixture to enhance electrostatic-based uptake of charged particles from the conductive fixture.

2. The cleaning assembly according to claim 1, wherein the substrate comprises a ceramic wafer.

3. The cleaning assembly according to claim 1, wherein the substrate is shaped as a semiconductor wafer.

4. The cleaning assembly according to claim 1, wherein the one or more structures within the one or more patterns are formed using carbon nanotubes (CNT).

5. The cleaning assembly according to claim 1, wherein the substrate is configured for manipulation by a handling device.

6. The cleaning assembly according to claim 1, wherein the substrate includes multiple pattern types, wherein each pattern type is configured to attract particles of different sizes.

7. The cleaning assembly according to claim 1, wherein the electrostatic attraction is caused by van der Waals forces.

8. The cleaning assembly according to claim 1, further comprising a ground connection, wherein, The ground connection is configured to ground the conductive fixture.

9. The cleaning assembly according to claim 8, wherein the one or more batteries are configured to establish an electric field between the conductor element and the conductive fixture that is between 0.1 kV and 5 kV to enhance electrostatic-based uptake of charged particles from the conductive fixture.

10. The cleaning assembly according to claim 1, wherein the substrate includes one or more reservoirs.

11. The cleaning assembly according to claim 10, wherein the one or more reservoirs are configured to carry one or more chemical reactants.

12. The cleaning assembly according to claim 11, wherein the substrate includes one or more valves for releasing the one or more chemical reactants from the one or more reservoirs onto the conductive fixture.

13. The cleaning assembly according to claim 12, wherein the one or more valves include one or more mechanical valves configured to open when the substrate is positioned on the conductive fixture.

14. The cleaning assembly according to claim 11, wherein the one or more reservoirs are configured to release one or more chemical reactants after exposure to a thermal shock.

15. The cleaning assembly according to claim 14, wherein the one or more reservoirs include one or more valves actuatable by a shape memory alloy actuator, wherein the shape memory alloy actuator is configured to open the one or more valves based on a temperature change of the shape memory alloy actuator.

16. The cleaning assembly according to claim 1, wherein the substrate is mountable in a clean substrate cabinet, and wherein the substrate is deliverable from the clean substrate cabinet to a process chamber via a handling device.

17. A system, comprising: A cleaning substrate cabinet configured to store cleaning substrates, with one or more patterns formed on the bottom side of the cleaning substrate. When the cleaning substrate is positioned on a conductive fixture, one or more structures within the one or more patterns attract one or more particles from the conductive fixture via at least electrostatic attraction or mechanical trapping. The cleaning substrate includes: one or more batteries; a conductor element attached to the top side of the substrate, where the one or more batteries are electrically coupled to the conductor element, where the one or more batteries are configured to establish an electric field between the conductor element and the conductive fixture to enhance the electrostatic-based extraction of charged particles from the conductive fixture.

18. A system comprising: A process chamber containing one or more conductive fixtures; And A handling device configured to receive a cleaning substrate cabinet containing one or more cleaning substrates, and further configured to translate the one or more cleaning substrates from the cleaning substrate cabinet to the one or more conductive fixtures within the process chamber. One or more patterns are formed on the bottom side of the one or more cleaning substrates. When the one or more cleaning substrates are positioned on the one or more conductive fixtures, one or more structures within the one or more patterns attract one or more particles from the one or more conductive fixtures via at least electrostatic attraction. The cleaning substrate includes: one or more batteries; A conductor element attached to the top side of the substrate, where the one or more batteries are electrically coupled to the conductor element, where the one or more batteries are configured to establish an electric field between the conductor element and the conductive fixture to enhance the electrostatic-based extraction of charged particles from the conductive fixture.

19. A method comprising: Providing a cleaning substrate in a cleaning substrate cabinet; Moving the cleaning substrate from the cleaning substrate cabinet to a conductive fixture contained within a process chamber via a handling device; And Cleaning the surface of the conductive fixture using the cleaning substrate. One or more patterns are formed on the bottom side of the cleaning substrate. When the cleaning substrate is positioned on the conductive fixture, one or more structures within the one or more patterns attract one or more particles from the conductive fixture via at least electrostatic attraction. The cleaning substrate includes: one or more batteries; A conductor element attached to the top side of the substrate, where the one or more batteries are electrically coupled to the conductor element, where the one or more batteries are configured to establish an electric field between the conductor element and the conductive fixture to enhance the electrostatic-based extraction of charged particles from the conductive fixture.

20. A characterization system comprising: One or more characterization subsystems configured to inspect a portion of a wafer disposed on a conductive fixture of a processing tool, and further configured to generate characterization data based on the inspection of the portion of the wafer disposed on the conductive fixture of the processing tool; And A controller comprising one or more processors configured to: Receive the characterization data from the one or more characterization subsystems; Determine one or more cleaning parameters based on the characterization data; And Direct one or more robotic assemblies to position a cleaning substrate onto the conductive chuck of the process tool, wherein the cleaning substrate comprises: one or more cells; A conductor element attached to the top side of the substrate, wherein the one or more cells are electrically coupled to the conductor element, Wherein the one or more cells are configured to establish an electric field between the conductor element and the conductive chuck to enhance electrostatic-based extraction of charged particles from the conductive chuck.

21. The characterization system of claim 20, wherein the one or more characterization subsystems comprise: At least one of an inspection tool or a particle re-inspection tool.

22. The characterization system of claim 21, wherein the particle re-inspection tool comprises an electron beam tool.

23. The characterization system of claim 22, wherein the electron beam tool is configured to generate particle re-inspection data.

24. The characterization system of claim 20, wherein the one or more cleaning parameters include: At least one of preparation of the cleaning substrate, initiation of a cleaning cycle, or orientation of the cleaning substrate.

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