Substrate processing method

Abstract

The present disclosure relates to a substrate processing method. The substrate processing method includes a liquid film formation process of supplying a chemical liquid to a center portion of a substrate while rotating a rotary table at a first speed, thereby causing an entirety of a surface of the substrate to be covered with a liquid film of the chemical liquid having a first thickness; a liquid film thickness adjustment process of supplying the chemical liquid to the center portion of the substrate while rotating the rotary table at a second speed lower than the first speed after the liquid film formation process, thereby causing the entirety of the surface of the substrate to be covered with a liquid film of the chemical liquid having a second thickness greater than the first thickness; and a liquid film heating process of heating the rotary table by an electric heater in a state of rotating the rotary table at a third speed lower than the second speed or a state of stopping the rotation of the rotary table after the liquid film thickness adjustment process, thereby heating the substrate and the liquid film of the chemical liquid covering the substrate.

Description

Technical Field

[0001] This disclosure relates to a substrate processing method. Background Technology

[0002] In the manufacture of semiconductor devices, liquid treatments such as liquid cleaning or wet etching are performed on substrates like semiconductor wafers by supplying a temperature-adjusted heated chemical solution to the substrate. Patent Document 1 describes an example of a single-wafer substrate processing apparatus for performing such liquid treatment. The apparatus in Patent Document 1 includes a rotary chuck for holding and rotating the wafer, and a non-rotating disk-shaped member (lower surface moving member) capable of contacting and separating from the lower surface of the wafer W held by the rotary chuck. A heater is embedded inside the lower surface moving member. A gap of approximately 0.5 to 3 mm is formed between the upper surface of the lower surface moving member and the lower surface of the wafer W, and this gap is filled with a chemical solution, which is heated by the heater of the non-rotating lower surface moving member. By rotating the substrate at a low speed of approximately 30 to 50 rpm using the rotary chuck, liquid treatment of the lower surface of the substrate can be performed using the temperature-adjusted chemical solution while preventing chemical deposition within the gap.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent No. 3837026 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique that can reduce the consumption of chemical solution while performing chemical treatment on a substrate, thereby achieving high in-plane uniformity.

[0008] Solution for solving the problem

[0009] According to one embodiment, a substrate processing method is provided, which is a substrate processing method performed using a substrate processing apparatus. The substrate processing apparatus includes: a rotary table that holds a substrate in a horizontal position and is used to rotate the substrate about a vertical axis; an electric heater that is disposed on the rotary table in a manner that rotates together with the rotary table and is used to heat the substrate placed on the rotary table; at least one processing liquid nozzle that is used to supply processing liquid to the surface of the substrate held on the rotary table; and a processing liquid supply mechanism that is used to supply the processing liquid to the processing liquid nozzle. The substrate processing method includes the following steps: a substrate holding step, in which the substrate is held on the rotary table; and a liquid film forming step, in which the rotary table is rotated at a first speed while the processing liquid is supplied to the center portion of the substrate. The liquid medicine is applied to the substrate, thereby covering the entire surface of the substrate with a liquid film of the liquid medicine having a first thickness; in the liquid film thickness adjustment step, after the liquid film formation step, the liquid medicine is supplied to the center of the substrate while the rotating table is rotated at a second speed lower than the first speed, thereby covering the entire surface of the substrate with a liquid film of the liquid medicine having a second thickness greater than the first thickness; and in the liquid film heating step, after the liquid film thickness adjustment step, the rotating table is heated by the electric heater while the rotating table is rotated at a third speed lower than the second speed, or while the rotating table is rocking, or while the rotation of the rotating table is stopped, thereby heating the substrate and the liquid film of the liquid medicine covering the substrate to promote the reaction between the liquid medicine and the surface of the substrate.

[0010] The effects of the invention

[0011] According to this disclosure, when heating the substrate while performing chemical treatment, it is possible to reduce the amount of chemical consumption while achieving high in-plane uniformity. Attached Figure Description

[0012] Figure 1 This is a top view showing the overall structure of a substrate processing apparatus according to one embodiment.

[0013] Figure 2 It means Figure 1 A schematic cross-sectional view of an example of the structure of a processing unit included in a substrate processing apparatus.

[0014] Figure 3 This is a top view illustrating an example of the configuration of the heater of the heating plate installed in the above-described processing unit.

[0015] Figure 4 This is a schematic top view showing an example of the structure of the upper surface of the aforementioned heating plate.

[0016] Figure 5 This is a schematic top view showing an example of the structure of the lower surface of the adsorption plate provided in the above-described processing unit.

[0017] Figure 6 This is a schematic top view showing an example of the structure of the upper surface of the aforementioned adsorption plate.

[0018] Figure 7 This is a schematic top view showing an example of the structure of the first electrode section provided in the aforementioned processing unit.

[0019] Figure 8 It is an enlarged representation Figure 2 The diagram shows a schematic cross-sectional view of the structure surrounding the first and second electrode portions.

[0020] Figure 9 yes Figure 5 and Figure 6 The diagram shows a schematic cross-sectional view of the adsorption plate.

[0021] Figure 10 Is with Figure 9 Summary cross-sectional views of the adsorption plate at different cross-sections.

[0022] Figure 11A-11P It is a diagram illustrating the process of treating the medicine solution.

[0023] Figure 12 This is a diagram illustrating a variation of the drying process.

[0024] Figure 13 This is a schematic diagram illustrating the principle of a first example of a power transmission mechanism that can supply power to a heater of a heating plate without using a switching mechanism.

[0025] Figure 14 yes Figure 13 The figure shows an axial schematic cross-sectional view of a first structural example of a power transmission mechanism.

[0026] Figure 15 This is an axial schematic cross-sectional view of a second example of a power transmission mechanism that can supply power to the heater of the heating plate without using a switching mechanism.

[0027] Explanation of reference numerals in the attached figures

[0028] W: Substrate (wafer); Ax: Rotation (vertical) axis; 100: Rotary stage; 142: Electric heater; 701: Nozzle (chemical nozzle); 701B: Processing fluid supply mechanism (chemical supply mechanism). Detailed Implementation

[0029] Hereinafter, an embodiment of the substrate processing apparatus (substrate processing system) will be described with reference to the accompanying drawings.

[0030] Figure 1 This is a diagram showing the outline structure of a substrate processing system according to one embodiment. Hereinafter, to clarify the positional relationships, the X-axis, Y-axis, and Z-axis are defined as mutually orthogonal, and the vertically upward direction is designated as the positive direction of the Z-axis.

[0031] like Figure 1 As shown, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged adjacent to each other.

[0032] The loading / unloading station 2 includes a carrier placement section 11 and a conveying section 12. Multiple carriers C are placed in the carrier placement section 11. These carriers C are used to accommodate multiple substrates, which in this embodiment are multiple semiconductor wafers (hereinafter referred to as wafers W), in a horizontal state.

[0033] The transport section 12 is configured to be adjacent to the carrier placement section 11, and a substrate transport device 13 and a transfer section 14 are provided inside the transport section 12. The substrate transport device 13 is provided with a wafer holding mechanism for holding the wafer W. In addition, the substrate transport device 13 can move in the horizontal and vertical directions and can rotate about the vertical axis. The substrate transport device 13 uses the wafer holding mechanism to transport the wafer W between the carrier C and the transfer section 14.

[0034] Processing station 3 is configured to be adjacent to conveyor section 12. Processing station 3 includes conveyor section 15 and multiple processing units 16. The multiple processing units 16 are arranged on both sides of conveyor section 15.

[0035] The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 17 can move in the horizontal and vertical directions and can rotate about the vertical axis. The substrate transfer device 17 uses the wafer holding mechanism to transfer the wafer W between the transfer unit 14 and the processing unit 16.

[0036] The processing unit 16 is used to perform a specified substrate processing on the wafer W transported by the substrate transport device 17.

[0037] In addition, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0038] Furthermore, the program may also be a program recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0039] In the substrate processing system 1 configured as described above, firstly, the substrate transport device 13 of the transport station 2 removes the wafer W from the carrier C placed in the carrier placement section 11 and places the removed wafer W in the transfer section 14. The substrate transport device 17 of the processing station 3 removes the wafer W placed in the transfer section 14 from the transfer section 14 and transports it into the processing unit 16.

[0040] After the wafer W is processed by the processing unit 16, the substrate transfer device 17 removes the wafer W from the processing unit 16 and places it in the transfer section 14. Then, the substrate transfer device 13 returns the processed wafer W placed in the transfer section 14 to the carrier C of the carrier placement section 11.

[0041] Next, the structure of one embodiment of the processing unit 16 will be described. The processing unit 16 is configured as a monolithic liquid processing unit.

[0042] like Figure 2 As shown, the processing unit 16 includes a rotary table 100, a processing liquid supply unit 700 for supplying processing liquid to the wafer W, and a liquid receiving cup (processing cup) 800 for collecting processing liquid spilled from the rotating substrate. The rotary table 100 is capable of holding a circular substrate such as the wafer W in a horizontal position and rotating the substrate. The rotary table 100, processing liquid supply unit 700, liquid receiving cup 800, and other structural components of the processing unit 16 are housed within a housing 1601 (also referred to as a processing chamber).

[0043] Figure 2 Only the left half of the processing unit 16 is shown. The processing unit 16 has information regarding... Figure 2 The structure shown at the right end is approximately symmetrical about the axis of rotation Ax. More than one counterweight 178 can be installed on the rotary table 100 to ensure the dynamic balance of the rotary table 100 during rotation.

[0044] The rotary table 100 includes an adsorption plate 120, a heating plate 140, a support plate 170, a peripheral cover 180, and a hollow rotation shaft 200. The adsorption plate 120 is used to adsorb the wafer W placed thereon in a horizontal orientation. The heating plate 140 is a base plate for the adsorption plate 120, supporting and heating it. The support plate 170 supports both the adsorption plate 120 and the heating plate 140.

[0045] The rotation axis 200 extends downward from the support plate 170. The rotary table 100 rotates about a vertically extending rotation axis Ax via an electric drive unit (rotation drive mechanism) 102 disposed around the rotation axis 200, thereby enabling the held wafer W to rotate about the rotation axis Ax. The electric drive unit 102 (details not shown) can be configured to drive the rotation axis 200 by transmitting power generated by an electric motor to the rotation axis 200 via a power transmission mechanism (e.g., a belt and pulley). Alternatively, the electric drive unit 102 can directly drive the rotation axis 200 using an electric motor.

[0046] The adsorption plate 120 is a circular plate-shaped component with a diameter slightly larger than that of the wafer W (or the same diameter depending on the structure), that is, a circular plate-shaped component with an area larger than or equal to that of the wafer W. The adsorption plate 120 has an upper surface (front side) 120A that adsorbs the lower surface of the wafer W (not the surface being processed) and a lower surface (back side) 120B that contacts the upper surface of the heating plate 140. The adsorption plate 120 can be formed of a material with high thermal conductivity, such as SiC, and preferably a material constituting the adsorption plate 120 with a thermal conductivity of 150 W / m·K or higher.

[0047] The heating plate 140 is a circular plate-shaped component with a diameter approximately equal to that of the adsorption plate 120. The heating plate 140 has a plate body 141 and an electric heater (electric heater) 142 disposed on the plate body 141. The plate body 141 is formed of a material with high thermal conductivity, such as thermally conductive ceramic, for example, SiC. Preferably, the thermal conductivity of the material constituting the plate body 141 is, for example, 150 W / m·K or higher.

[0048] The heater 142 can be a planar heater, such as a polyimide heater, disposed on the lower surface (back side) of the plate body 141. Preferably, the heating plate 140 is positioned on... Figure 3 The diagram shows multiple (e.g., 10) heating zones 143-1 to 143-10. The heater 142 is composed of multiple heater elements 142E respectively assigned to each heating zone 143-1 to 143-10. Each heater element 142E is formed by a conductor extending serpentinely within each heating zone 143-1 to 143-10. Figure 3 Only heater element 142E, which is located in heating zone 143-1, is shown.

[0049] The plurality of heater elements 142E can be powered independently by the power supply unit 300 described later. Therefore, different heating zones of the wafer W can be heated under different conditions, thereby controlling the temperature distribution of the wafer W.

[0050] like Figure 4As shown, the upper surface (front side) of the plate body 141 has one or more (two in the example) plate suction ports 144P, one or more (one in the center in the example) substrate suction ports 144W, and one or more (two on the outer side in the example) purge gas supply ports 144G. The plate suction ports 144P are used to transmit the attractive force for adsorbing the adsorption plate 120 onto the heating plate 140. The substrate suction ports 144W are used to transmit the attractive force for adsorbing the wafer W onto the adsorption plate 120.

[0051] The plate body 141 also has multiple (three in the example) lifting pin holes 145L for the lifting pin 211 to pass through, and multiple (six in the example) service holes 145S for assembly screws leading to the rotary table 100. During normal operation, the service holes 145S are blocked with caps 145C.

[0052] The aforementioned heater element 142E is arranged to avoid the aforementioned plate suction port 144P, substrate suction port 144W, purge gas supply port 144G, lifting pin hole 145L, and access hole 145S. Furthermore, by using an electromagnet to connect to the rotating shaft 200, the access hole can also be eliminated.

[0053] like Figure 5 As shown, a lower surface suction flow path 121P for the plate, a lower surface suction flow path 121W for the substrate, and a lower surface purge flow path 121G are formed on the lower surface 120B of the adsorption plate 120. When the adsorption plate 120 is placed on the heating plate 140 in an appropriate position, at least a portion of the lower surface suction flow path 121P for the plate communicates with the plate suction port 144P. Similarly, at least a portion of the lower surface suction flow path 121W for the substrate communicates with the substrate suction port 144W, and at least a portion of the lower surface purge flow path 121G communicates with the purge gas supply port 144G. The lower surface suction flow path 121P for the plate, the lower surface suction flow path 122W for the substrate, and the lower surface purge flow path 121G are separated from each other (not communicated).

[0054] exist Figure 10 The diagram shows, in a general sense, the suction port 144P (or 144W, 144G) of the heating plate 140 and the flow channel 121P (or 121W, 121G) of the adsorption plate 120 overlap and are connected to each other.

[0055] like Figure 6 and Figure 9As shown, a plurality of (five in the example) coarse annular partition walls 124 are formed on the upper surface 120A of the adsorption plate 120. The coarse partition walls 124 divide the upper surface 120A into a plurality of concave regions 125W, 125G (four outer annular regions and the innermost circular region) that are separated from each other.

[0056] Multiple through holes (129G) are formed at multiple locations on the lower surface of the substrate for attracting flow path groove 121W, which penetrate the adsorption plate 120 along the thickness direction. Each through hole connects the lower surface of the substrate for attracting flow path groove 121W with one of the multiple (four in the example) recessed regions 125W.

[0057] In addition, through holes (129G) are formed at multiple locations on the lower surface purge flow path groove 121G, penetrating the adsorption plate 120 along the thickness direction, and each through hole connects the lower surface purge flow path groove 121G with the outermost concave region 125G. The outermost concave region 125G is a single annular upper surface purge flow path groove.

[0058] In each of the four inner recessed regions 125W, a plurality of fine, generally annular, separating walls 127 are arranged concentrically. Each fine separating wall 127 forms at least one upper surface attraction flow channel within each recessed region 125W that extends serpentinely within that region. In other words, the fine separating walls 127 distribute the attraction force evenly within each recessed region 125W.

[0059] like Figure 2 As shown, a suction / purge unit 150 is provided near the rotation axis Ax. The suction / purge unit 150 has a rotary joint 151 disposed inside the hollow rotation shaft 200. A suction pipe 152W communicating with the plate suction port 144P and the substrate suction port 144W of the heating plate 140, and a purge gas supply pipe 152G communicating with the purge gas supply port 144G are connected to the upper member 151A of the rotary joint 151.

[0060] Although not illustrated, the suction pipe 152W can be branched, with the branch suction pipe connected to the plate body 141 of the heating plate 140 directly below the plate suction port 144P and the substrate suction port 144W. In this case, a through hole extending vertically through the plate body 141 can be formed, and the branch suction pipe can be connected to each through hole. Similarly, the purge gas supply pipe 152G can be branched, with the branch purge gas supply pipe connected to the plate body 141 of the heating plate 140 directly below the purge gas supply port 144G. In this case, a through hole extending vertically through the plate body 141 can be formed, and the purge gas supply pipe can be connected to each through hole. Figure 10The above-mentioned branch suction piping or branch purge gas piping is summarized as follows (marked with reference designations 152WB, 152GB).

[0061] Alternatively, the suction pipe 152W and the purge gas supply pipe 152G can be connected to the central portion of the plate body 141 of the heating plate 140 to replace the above structure. In this case, a flow path is provided inside the plate body 141 to connect the suction pipe 152W to the plate suction port 144P, a flow path to connect the suction pipe 152W to the substrate suction port 144W, and a flow path to connect the purge gas supply pipe 152G to the purge gas supply port 144G.

[0062] The lower member 151B of the rotary joint 151 is connected to a suction pipe 153W that communicates with the suction pipe 152W, and a purge gas supply pipe 153G that communicates with the purge gas supply pipe 151G. The rotary joint 151 is configured to allow the upper member 151A and the lower member 151B to rotate relative to each other while maintaining communication between the suction pipes 152W and 153W, and between the purge gas supply pipes 152G and 153G. Rotary joints 151 with such functions are known in the art.

[0063] Suction piping 153W is connected to a suction device 154, such as a vacuum pump. Purge gas supply piping 153G is connected to a purge gas supply device 155. Suction piping 153W is also connected to the purge gas supply device 155. Additionally, a switching device 156 (e.g., a three-way valve) is provided to switch the connection of suction piping 153W between the suction device 154 and the purge gas supply device 155.

[0064] Multiple temperature sensors 146 for detecting the temperature of the plate body 141 of the heating plate 140 are embedded in the heating plate 140. For example, one temperature sensor 146 can be installed in each of the ten heating zones 143-1 to 143-10. Based on the deviation between the detected value of the temperature sensor 146 and the target value (target temperature), the power supplied to the heater element 142e of each heating zone (143-1 to 143-10) is controlled by a control function provided, for example, in the power supply unit 300, thereby maintaining the temperature of each heating zone at the target value. In addition, at least one thermal switch 147 for detecting overheating of the heater 142 is provided near the heater 142 of the heating plate 140.

[0065] In the space S between the heating plate 140 and the support plate 170, in addition to the temperature sensor 146 and the thermal switch 147 mentioned above, control signal wiring (first conductive line) 148A and 148B for sending detection signals from the temperature sensor 146 and the thermal switch 147, and power supply wiring (first conductive line) 149 for supplying power to each heater element 142E of the heater 142 are also provided.

[0066] like Figure 2 As shown, a switching mechanism 160 is provided around the rotary joint 151. The switching mechanism 160 includes a first electrode portion 161A fixed in the direction of the rotation axis Ax, a second electrode portion 161B movable in the direction of the rotation axis Ax, and an electrode moving mechanism 162 (lifting mechanism) for moving (raising / lowering) the second electrode portion 161B in the direction of the rotation axis Ax. Furthermore, the first electrode portion 161A and the second electrode portion 161B can move relative to each other in the direction of the rotation axis Ax. That is, the electrode moving mechanism (not shown) can move the first electrode portion 161A in the direction of the rotation axis Ax while fixing the second electrode portion 161B in the direction of the rotation axis Ax.

[0067] like Figure 7 As shown, the first electrode section 161A has a first electrode carrier 163A and a plurality of first electrodes 164A supported on the first electrode carrier 163A. The plurality of first electrodes 164A includes a first electrode 164AC for control signal communication connected to control signal wirings 148A and 148B. Figure 7 (Represented by a small "○") and the first electrode 164AP for powering the heater connected to the power supply wiring 149 (in) Figure 7 The middle part is represented by a large "○".

[0068] The first electrode carrier 163A is a generally circular plate-shaped component that appears roughly circular when viewed from the direction of the rotation axis Ax. A circular hole 167 is formed in the center of the first electrode carrier 163A for inserting the upper component 151A of the rotary joint 151. The upper component 151A of the rotary joint 151 can also be fixed to the first electrode carrier 163A. The peripheral portion of the first electrode carrier 163A can be threaded to the support plate 170 using the threaded hole 171.

[0069] like Figure 2 As shown in the schematic diagram, the second electrode portion 161B has a second electrode carrier 163B and a plurality of second electrodes 164B supported on the second electrode carrier 163B. The second electrode carrier 163B has a diameter of... Figure 7The first electrode carrier 163A shown is a generally circular plate-shaped component. A circular hole of a size that allows the lower component 151B of the rotary joint 151 to pass through is formed in the center of the second electrode carrier 163B.

[0070] The second electrode 164B, which is raised and lowered relative to the first electrode 164A to separate from the first electrode 164A, has the same planar configuration as the first electrode 164A. Furthermore, the second electrode 164B (power supply electrode), which is in contact with the first electrode 164AP (power receiving electrode) for powering the heater, will also be referred to below as "second electrode 164BP". Additionally, the second electrode 164B, which is in contact with the first electrode 164AC for control signal communication, will also be referred to as "second electrode 164BC". The second electrode 164BP is connected to the power output terminal of the power supply unit (power supply section) 300. The second electrode 164BC is connected to the control input / output terminal of the power supply section 300.

[0071] like Figure 7 As shown, a first electrode 164AP for supplying power to the heater is disposed in the central region of the first electrode carrier 163A, and a first electrode 164AC for control signal communication is disposed in the outer region outside the central region. The plurality of first electrodes 164AP are also referred to as the first electrode group in the first electrode 164A. The plurality of first electrodes 164AC are also referred to as the second electrode group in the first electrode 164A.

[0072] Furthermore, it is self-evident that the second electrode 164B (164BP, 164BC) is positioned in a manner suitable for pairing with the first electrode 164A (164AP, 164AC) (horizontal position, height position), and the description of the configuration of the second electrode 164B is omitted.

[0073] The conductive paths (second conductive lines) 168A, 168B, and 169 connecting each second electrode 164B to the power output terminal and control input / output terminal of the power supply unit 300 (refer to...) Figure 2 At least partially, it is formed by flexible wires. Through these flexible wires, the second electrode 164B can be kept connected to the power supply unit 300, allowing the second electrode 161B to rotate about the rotation axis Ax from its neutral position in the forward and reverse directions within predetermined angle ranges (in other words, a defined angle range). This angle range is, for example, 180 degrees, but is not limited to that angle. This means that the rotary table 100 can be rotated approximately ±180 degrees while maintaining the connection between the first electrode 164A and the second electrode 164B.

[0074] Alternatively, one of the paired first electrode 164A and second electrode 164B can be configured as a spring needle. Figure 2In this design, the second electrode 164B is entirely composed of a spring-loaded pin. Furthermore, the term "spring-loaded pin" is widely used to refer to a retractable rod-shaped electrode containing a built-in spring. As an electrode, an electrical socket, magnetic electrode, or inductive electrode can also be used instead of a spring-loaded pin.

[0075] Preferably, a locking mechanism 165 is provided, which locks the first electrode carrier 163A and the second electrode carrier 163B so that they cannot rotate relative to each other when the paired first electrode 164A and second electrode 164B are in proper contact with each other. For example Figure 2 and Figure 8 As shown, the locking mechanism 165 can be composed of a hole 165A provided in the first electrode carrier 163A and a pin 165B provided in the second electrode carrier for engaging with the hole.

[0076] Preferably, a sensor 172 is provided for detecting that the paired first electrode 164A and second electrode 164B are in proper contact with each other. Figure 2 (Simplified representation shown). As such a sensor, an angle position sensor (not shown) can be provided to detect that the angular relationship between the first electrode carrier 163A and the second electrode carrier 163B is in an appropriate state. Alternatively, a distance sensor (not shown) can be provided to detect that the distance between the first electrode carrier 163A and the second electrode carrier 163B in the direction of the rotation axis Ax is in an appropriate state. Furthermore, a contact sensor can also be provided to detect that the pin 165B is properly engaged in the hole 165A of the locking mechanism 165 (see reference). Figure 8 ).

[0077] Two holes 165A and two pins 165B are provided to achieve... Figure 8 The diagram shows a contact-type sensor. Preferably, pins 165B are formed of a conductive material, and the first electrode carrier 163A is formed of an insulating material. A conductive member, consisting of two electrodes 175A and a conductive member 175B electrically connecting the two electrodes 175A, is provided on the first electrode carrier 163A. The two electrodes 175A are positioned corresponding to the two holes 165A respectively. The two pins 165B are connected to the continuity sensor 175D via the conductive member 175C. When each pin 165B is properly inserted into its corresponding hole 165A, the tip of the pin 165B contacts the electrode 175A, which is detected by the continuity sensor 175D.

[0078] Preferably, the power supply unit 300 includes a control function that supplies power to the electric heater 142 only when the continuity sensor 175D confirms proper engagement between the hole 165A and the pin 165B. This, for example, prevents discharge between the first electrode 164AP and the second electrode 164BP used for powering the heater, thereby preventing damage to the electrodes or circuitry.

[0079] like Figure 8 As shown, in Figure 2 The electrode moving mechanism 162, as shown in the schematic diagram, can be configured to include a push rod 162A for pushing the second electrode carrier 163B upward and a lifting mechanism 162B (cylinder, ball screw, etc.) for raising and lowering the push rod 162A. At least one permanent magnet 173A can be provided on the first electrode carrier 163A, and at least one electromagnet 173B can be provided on the second electrode carrier 163B. The permanent magnet 173A and the electromagnet 173B form part of the aforementioned locking mechanism 165. Thus, as needed, the first electrode portion 161A and the second electrode portion 161B can be combined by electromagnetic attraction to prevent them from moving relative to each other in the vertical direction, and the first electrode portion 161A and the second electrode portion 161B can be separated by electromagnetic repulsion. Preferably, a plurality of permanent magnets 173A and an equal number of electromagnets 173B are provided, and arranged at equal intervals along a circumferential direction centered on the rotation axis Ax.

[0080] If the engagement and disengagement of the first electrode portion 161A and the second electrode portion 161B occur at the same angular position on the rotary table 100, then the second electrode portion 161B may not need to be supported so that it can rotate about the rotation axis Ax. That is, it is sufficient to have a component (such as the push rod 162A or other support platform described above) that supports the second electrode portion 161B when the first electrode portion 161A and the second electrode portion 161B are separated. Alternatively, when the first electrode portion 161A and the second electrode portion 161B are engaged, for example by electromagnetic force, the second electrode portion 161B may separate from the component supporting the second electrode portion 161B (such as the push rod 162A or other support platform).

[0081] The electric drive unit 102 of the rotary table 100 has a positioning function that stops the rotary table 100 at any rotational angle position. This positioning function is achieved by rotating the motor of the electric drive unit 102 based on the detection value of a rotary encoder attached to the rotary table 100 (or a component that rotates via the rotary table 100). By raising the second electrode portion 161B using the electrode moving mechanism 162 while the rotary table 100 is stopped at a predetermined rotational angle position, the corresponding electrodes of the first electrode portion 161A and the second electrode portion 161B can be brought into proper contact with each other. Preferably, when separating the second electrode portion 161B from the first electrode portion 161A, the separation also occurs while the rotary table 100 is stopped at the aforementioned predetermined rotational angle position.

[0082] As described above, multiple electrical components (heaters, wiring, sensors, etc.) are arranged in the space S between the adsorption plate 120 and the support plate 170, and at positions facing the space S. A peripheral cover 180 protects the electrical components by preventing the processing liquid, especially corrosive liquid, supplied to the wafer W from entering the space S. Purge gas (N2) can also be supplied to the space S via a branch pipe (not shown) from the purge gas supply pipe 152G. This prevents corrosive gases originating from the liquid from entering the space S from the outside, maintaining a non-corrosive atmosphere within the space S.

[0083] Furthermore, it is particularly preferable to provide an inactive gas supply mechanism for supplying inactive gas (N2 gas) to the space SE between the first electrode carrier 163A and the second electrode carrier 163B, which are in contact with the first electrode of the first electrode section and the second electrode of the second electrode section. This inactive gas supply mechanism can be composed of a purge gas supply device 155 and an inactive gas supply pipe 176 for supplying N2 gas, the inactive gas, from the purge gas supply device 155 to the space SE. In other words, the purge gas supply device 155, which supplies N2 gas as purge gas into the space S, also functions as an inactive gas supply device for supplying N2 gas, the inactive gas, to the space SE. Preferably, inactive gas is supplied to the space SE continuously during the operation of the processing unit 16. This maintains the electrode surface in a good condition, thereby improving the operational reliability of the processing unit 16.

[0084] Alternatively, a dedicated inactive gas supply source, independent of the purge gas supply device 155, can be used to supply inactive gas (N2) to the space SE. Furthermore, if the space SE can be filled with N2 gas by supplying it as purge gas, a dedicated inactive gas supply mechanism for the space SE may not be necessary.

[0085] like Figure 2As shown, the peripheral cover 180 has an upper part 181, a side peripheral part 182, and a lower part 183. The upper part 181 is connected to the adsorption plate 120 and extends upward toward the adsorption plate 120. The lower part 183 of the peripheral cover 180 is connected to the support plate 170.

[0086] The inner periphery of the upper portion 181 of the peripheral cover 180 is located radially inward than the outer periphery of the adsorption plate 120. The upper portion 181 has an annular lower surface 184 that is in contact with the upper surface of the adsorption plate 120, an inclined annular inner peripheral surface 185 that rises from the inner periphery of the lower surface 184, and an annular outer peripheral surface 186 that extends approximately horizontally outward in the radial direction from the outer periphery of the inner peripheral surface 185. The inner peripheral surface 185 is inclined in a manner that decreases as it approaches the center of the adsorption plate 120.

[0087] Preferably, a seal is provided between the upper surface 120A of the adsorption plate 120 and the lower surface 184 of the upper part 181 of the peripheral cover 180 to prevent liquid ingress. The seal can be provided as an O-ring 192 disposed between the upper surface 120A and the lower surface 184 (see reference). Figure 9 ).

[0088] like Figure 5 As shown, a portion of the lower surface suction flow channel 121P for the plate extends circumferentially along the outermost periphery of the adsorption plate 120. Additionally, as... Figure 6 As shown, grooves 193 extend continuously along the circumferential direction on the outermost periphery of the upper surface 120A of the adsorption plate 120. Figure 9 As shown, the outermost lower surface suction flow channel 121P and the groove 193 are connected via a plurality of through holes 129P that are spaced apart in the circumferential direction and penetrate the adsorption plate 120 along the thickness direction. The lower surface 184 of the upper part 181 of the peripheral cover 180 is placed on the groove 193. Therefore, by applying a negative pressure to the lower surface suction flow channel 121P of the plate, the lower surface 184 of the upper part 181 of the peripheral cover 180 is adsorbed onto the upper surface 120A of the adsorption plate 120. Through this adsorption, the O-ring 192 deforms, thus achieving a reliable seal.

[0089] The height of the top of the outer peripheral surface 186, i.e., the peripheral cover 180, is higher than the height of the upper surface of the wafer W held on the adsorption plate 120. Therefore, when processing liquid is supplied to the upper surface of the wafer W while it is held on the adsorption plate 120, a surface can be formed such that the upper surface of the wafer W is positioned above the liquid level LS (refer to...). Figure 2The liquid accumulation for impregnating the wafer W is performed in a manner at a lower position. That is, an upper portion 181 of the peripheral hood 180 forms a dike portion surrounding the periphery of the wafer W held on the adsorption plate 120, and a recess capable of storing the processing liquid is formed by the upper portion 181 of the peripheral hood 180 and the adsorption plate 120. With this structure, the impregnation process of the wafer W can also be performed.

[0090] When the rotary table 100 rotates at a high speed, the inclination of the inner peripheral surface 185 of the upper portion 181 of the peripheral hood 180 enables the processing liquid in the above-mentioned groove to smoothly scatter outward. That is to say, by having this inclination, it is possible to prevent the liquid from staying on the inner peripheral surface of the upper portion 181 of the peripheral hood 180 when the rotary table 100 rotates at a high speed.

[0091] In addition, in the liquid medicine treatment disclosed in this application specification (the detailed content will be described later), instead of immersing the wafer W in a liquid bath of the processing liquid, a liquid filling (Japanese: 液盛り) treatment for forming a slurry on the surface of the wafer W is performed. If the impregnation process of the wafer W is not performed, the height of the upper portion 181 of the peripheral hood 180 can be lower than that in the illustrated example, and the inclination of the inner peripheral surface 185 can also be gentler than that in the illustrated example.

[0092] A rotary cup 188 (rotary liquid receiving member) that rotates together with the peripheral hood 180 is provided outside the peripheral hood 180 in the radial direction. The rotary cup 188 is connected to a structural member of the rotary table 100 via a plurality of connecting members 189 provided at intervals in the circumferential direction, and is connected to the peripheral hood 180 in the illustrated example. The upper end of the rotary cup 188 is located at a height capable of blocking the processing liquid scattered from the wafer W. A passage 190 for the processing liquid scattered from the wafer W to flow down is formed between the outer peripheral surface of the side peripheral portion 182 of the peripheral hood 180 and the inner peripheral surface of the rotary cup 188.

[0093] A liquid receiving cup 800 surrounds the rotating stage 100 and is used to collect the processing liquid spilled from the wafer W. In the illustrated embodiment, the liquid receiving cup 800 has a fixed outer cup element 801, a fixed inner cup element 804, and a first movable cup element 802 and a second movable cup element 803 that can be raised and lowered. A first discharge passage 806, a second discharge passage 807, and a third discharge passage 808 are formed between two adjacent cup elements (between 801 and 802, between 802 and 803, and between 803 and 804), respectively. The processing liquid flowing out from the passage 190 between the peripheral cover 180 and the rotating cup 188 can be guided to any of the three discharge passages 806, 807, and 808 selected by changing the position of the first movable cup element 802 and the second movable cup element 803. The first discharge passage 806, the second discharge passage 807, and the third discharge passage 808 are respectively connected to any one of the following discharge passages (not shown): an acid-based discharge passage, an alkaline discharge passage, and an organic-based discharge passage, all located in a semiconductor manufacturing plant. A gas-liquid separation structure (not shown) is provided within the first discharge passage 806, the second discharge passage 807, and the third discharge passage 808. The first discharge passage 806, the second discharge passage 807, and the third discharge passage 808 are connected to the plant's exhaust system via an exhaust device (not shown) such as a jet pump, and are thus drawn into the exhaust system. Such a liquid receiving cup 800 is known from publications related to the applicant's patent application, including Japanese Patent Application Publication No. 2012-129462 and Japanese Patent Application Publication No. 2014-123713; for details regarding such a liquid receiving cup 800, please refer to these publications.

[0094] On the adsorption plate 120 and the support plate 170, three lifting pin holes 128L and 171L are also formed respectively, in a manner that is aligned with the three lifting pin holes 145L of the heating plate 140 in the direction about the rotation axis Ax.

[0095] On the rotary table 100, a plurality of lifting pins 211 (three in the example) are provided through lifting pin holes 145L, 128L, and 171L. Each lifting pin 211 is movable between a junction position (rising position) in which the upper end of the lifting pin 211 protrudes upward from the upper surface 120A of the adsorption plate 120 and a processing position (falling position) in which the upper end of the lifting pin 211 is below the upper surface 120A of the adsorption plate 120.

[0096] A push rod 212 is provided below each lifting pin 211. The push rod 212 can be raised or lowered using a lifting mechanism 213, such as a cylinder. By pushing the lower end of the lifting pin 211 upward using the push rod 212, the lifting pin 211 can be raised to the junction position. Alternatively, multiple push rods 212 can be configured as an annular support body (not shown) centered on the rotation axis Ax, and the multiple push rods 212 can be raised or lowered by raising or lowering the annular support body using a common lifting mechanism.

[0097] The wafer W carried on the lifting pin 211, which is in the handover position, is at a height higher than the upper end 809 of the fixed outer cup element 801, and can be connected to the arm of the substrate transport device 17 (see reference) entering the interior of the processing unit 16. Figure 1 The wafer W is transferred between the two.

[0098] When the lifting pin 211 disengages from the push rod 212, the lifting pin 211 descends to the processing position by the elastic force of the return spring 214 and remains in that position. Figure 1 In the diagram, reference numeral 215 is a guide member for guiding the lifting pin 211, and reference numeral 216 is a spring receiving portion for receiving the return spring 214. Furthermore, an annular recess 810 is formed on the fixed inner cup element 804 to allow the spring receiving portion 216 to rotate about the rotation axis Ax.

[0099] The processing fluid supply unit 700 is equipped with multiple nozzles. These nozzles include a chemical nozzle 701, a rinsing nozzle 702, and a drying accelerator nozzle 703. Chemicals are supplied from a chemical supply source 701A to the chemical nozzle 701 via a chemical supply mechanism 701B, which includes fluid control devices (not shown) such as on / off valves and flow control valves, installed in the chemical supply line (pipeline) 701C. Rinsing fluid is supplied from a rinsing fluid supply source 702A to the rinsing fluid supply mechanism 702B, which includes fluid control devices (not shown) such as on / off valves and flow control valves, installed in the rinsing fluid supply line (pipeline) 702C. A drying accelerator, such as IPA (isopropanol), is supplied from a drying accelerator supply source 703A to the drying accelerator supply mechanism 703B, which includes fluid control devices (not shown) such as on / off valves and flow control valves, installed in the drying accelerator supply line (pipeline) 703C.

[0100] A heater 701D can be installed in the medicine supply line 701C as a temperature adjustment mechanism for adjusting the temperature of the medicine. Furthermore, a heating element (not shown) for adjusting the temperature of the medicine can also be installed in the piping constituting the medicine supply line 701C. Such a heater can also be installed in the rinsing fluid supply line 702C.

[0101] The chemical solution nozzle 701, the rinsing nozzle 702, and the drying accelerator nozzle 703 are supported by the front end of the nozzle arm 704. The base of the nozzle arm 704 is supported by a nozzle arm drive mechanism 705 for raising, lowering, and rotating the nozzle arm 704. The nozzle arm drive mechanism 705 allows the chemical solution nozzle 701, the rinsing nozzle 702, and the drying accelerator nozzle 703 to be positioned at any radial position above the wafer W (a position related to the radial direction of the wafer W).

[0102] The top of the housing 1601 is provided with a wafer sensor 860 for detecting whether a wafer W is present on the rotary table 100, and one or more infrared thermometers 870 (only one is shown) for detecting the temperature of the wafer W (or the temperature of the processing liquid on the wafer W). When multiple infrared thermometers 870 are provided, it is preferable that each infrared thermometer 870 detects the temperature of the area of ​​the wafer W corresponding to each heating zone 143-1 to 143-10.

[0103] Next, refer to Figures 11A to 11P The operation of the substrate processing apparatus will be explained using the example of processing a wafer W with a chemical solution. The chemical solution can be, for example, a solution for wet etching or a solution for cleaning. Furthermore, in... Figures 11A to 11P In the diagram, the number of arrows extending downwards from the FFU roughly corresponds to the flow rate of gas supplied from the FFU into the processing chamber 1601. Reference symbol CA indicates clean air, and reference symbol DA indicates dry air. The exhaust flow rate of gas discharged from the liquid receiver cup 800 roughly corresponds to the number of arrows marked with reference symbol EXH. Additionally, in... Figures 11A to 11P In the diagram, S1 to S16, which are recorded on the left side of FFU, refer to the diagram corresponding to steps 1 to 16.

[0104] In the following description, processing parameters will be expressed as follows for the sake of simplicity.

[0105] The term "plate heating switch" indicates the state of the switching mechanism 160. "On" indicates that the second electrode part 161B of the switching mechanism 160 rises to make electrical contact with the first electrode part 161A to supply power to the heating plate 140. "Off" indicates that the second electrode part 161B of the switching mechanism 160 falls away from the first electrode part 161A (on state).

[0106] The "plate temperature" in this project refers to the temperature of the adsorption plate 120 on the rotating stage 100 on which the wafer W is placed. The temperature of the adsorption plate 120 is increased by heating by the heating plate 140. It can be assumed that after a certain period of time has elapsed since the wafer W was adsorbed onto the adsorption plate 120 and became integrated with it, the temperature of the wafer W is approximately equal to the temperature of the adsorption plate 120.

[0107] The project's "chamber air supply flow rate" is reflected in the FFU (fan filter unit) and also refers to... Figure 2 The gas supply flow rate that supplies gas into the housing (processing chamber) 1610.

[0108] The "cup exhaust flow rate" of the project represents the exhaust flow rate of gas discharged from the liquid receiving cup 800.

[0109] The "Wafer Rotation" project represents the rotational speed of wafer W as it rotates on a rotary table 100. When rotating continuously in the same direction, only the rotational speed is recorded; when rotating in a rocking motion (alternating between forward and reverse rotation), the meaning of the rocking motion is recorded.

[0110] The "medicine nozzle" item is characterized by whether medicine is sprayed from the medicine nozzle 701, and the position of the medicine nozzle 701 (only the position when spraying is recorded).

[0111] The "rinsing nozzle" item is characterized by whether rinsing fluid (DIW in this case) is sprayed from rinsing nozzle 702, and the position of rinsing nozzle 702 (only the position when spraying is recorded).

[0112] The "IPA nozzle" item is characterized by whether IPA, which is a drying accelerator, is sprayed out from the drying accelerator nozzle 703, and the position of the drying accelerator nozzle 703 (only the position when spraying is recorded).

[0113] [Step 1 (Wafer Holding Process)]

[0114] The arm of the substrate transport device 17 for wafer W, which is kept at room temperature (e.g., about 24°C), (see reference) Figure 1 The wafer W enters the processing unit 16 and is positioned directly above the adsorption plate 120, which is at room temperature (e.g., approximately 24°C). The lifting pin 211 is in the junction position. In this state, the arm of the substrate transport device 17 descends, thereby placing the wafer W on the upper end of the lifting pin 211, and the wafer W leaves the arm. Then, the arm of the substrate transport device 17 retracts from the processing unit 16. Next, the suction device 154 operates, adsorbing the adsorption plate 120 onto the heating plate 140, and initiating an attraction force on the surface of the adsorption plate 120. In this state, the lifting pin 211 descends to the processing position, and through this process, the wafer W is placed on the upper surface 120A of the adsorption plate 120, and the wafer W is immediately adsorbed onto the adsorption plate 120.

[0115] Next, the wafer sensor 860 checks whether the wafer W is properly adsorbed onto the adsorption plate 120. By adsorbing the wafer W onto the adsorption plate 120, heat is transferred from the heating plate 140 to the wafer W via the adsorption plate 120. Therefore, the wafer W can be heated efficiently, and the temperature can be precisely controlled for each heating zone.

[0116] Purging gas (e.g., N2) is continuously supplied from the purging gas supply device 155 to the outermost recessed region 125G on the upper surface of the adsorption plate 120. Therefore, even if a gap exists between the contact surface between the periphery of the lower surface of the wafer W and the periphery of the adsorption plate 120, the processing liquid will not be immersed between the periphery of the wafer W and the periphery of the adsorption plate 120 through this gap.

[0117] The process conditions for step 1 are shown below. Even if not specifically stated in the descriptions of other steps, the chamber gas supply flow rate can be slightly higher than the cup exhaust flow rate to maintain a slightly positive pressure within the processing chamber 1610.

[0118] Plate heating switch: Off

[0119] Plate temperature: 24℃ (23~27℃)

[0120] Chamber air supply flow rate: 0.4m³ 3 / min slightly larger

[0121] Cup exhaust flow rate: 0.4m 3 / min

[0122] Wafer rotation speed: 0 rpm

[0123] Liquid nozzle: No spraying

[0124] Flushing nozzles: No spraying occurs.

[0125] IPA nozzle: No spraying

[0126] [Step 2 (Preparatory Heating Process)]

[0127] Next, the switching mechanism 160 is turned on to supply power to the heating plate 140 to generate heat, thereby heating the adsorption plate 120 and the wafer W adsorbed on the adsorption plate 120 to 65°C (see reference). Figure 11B Here, 65°C is a temperature slightly higher than the drug solution treatment temperature (60°C in this case) mentioned later (60°C + α°C).

[0128] After step 2 ends and before step 5 begins, no power is supplied to the heating plate 140, so the temperature of the adsorption plate 120 and the wafer W will drop due to heat dissipation. This temperature drop is compensated for in step 2. α°C is determined so that the temperature of the adsorption plate 120 and the wafer W at the start of step 5 is approximately the same as the chemical treatment temperature. Since the target control temperature of the heating plate 140 (or wafer W) at the start of step 5 is the chemical treatment temperature (60°C in this case), temperature control begins with almost no difference between the target control temperature and the actual temperature, thus minimizing oscillations and overshoot. Therefore, the etching amount obtained by etching with the chemical solution is close to the target value, and the in-plane uniformity of the etching amount is also improved.

[0129] The α℃ can be determined to be an appropriate temperature within the range of 0 to +10℃ (or even 0 to +5℃). When determining the α℃, the heat capacity of the adsorption plate 120 and the components thermally bonded to it is taken into consideration. For example, step 2 is performed during a period of approximately 35 seconds. The 35 seconds mentioned is, for example, roughly equivalent to the time required for the temperature of the adsorption plate 120 and the wafer W to rise from room temperature to 65℃, which is the temperature for chemical treatment.

[0130] During the heating period (e.g., approximately 35 seconds), the liquid is dispensed from nozzle 701 to the pseudo-dispensing port (only when...). Figure 11B (Reference 710 is used to schematically represent the process) Pseudo-dispensing of the chemical solution is performed. The temperature of the chemical solution remaining in the chemical solution supply line 701C connected to the chemical solution nozzle 701 decreases due to heat dissipation. By performing pseudo-dispensing to discharge the low-temperature chemical solution from the chemical solution line before it is ejected from the chemical solution nozzle 701 onto the wafer W, the desired temperature of the chemical solution is supplied to the wafer W from the very beginning of the ejection process. Pseudo-dispensing is performed until the temperature T of the chemical solution to be ejected from the chemical solution nozzle 701 reaches a predetermined temperature Tp higher than room temperature.

[0131] The temperature Tp can be set to approximately the same temperature as the liquid treatment temperature Tc in step 5. This reduces the load on the heating plate 140 (the electricity required for heating). However, since the load on the heating plate 140 will be reduced as long as the temperature Tp is at least higher than room temperature, the temperature Tp can be set to any temperature that is higher than room temperature but lower than the liquid treatment temperature Tc.

[0132] Furthermore, the pseudo-dispensing port 710, as is well known in the art, is located at the original position of the liquid ejection nozzle (here, the liquid nozzle 701). Figure 11BThe position shown corresponds to the waiting position outside the liquid receiving cup 800. The pseudo-dispensing port 710 is configured to receive the liquid ejected from the liquid ejection nozzle. The liquid received by the pseudo-dispensing port 710 is either recycled for reuse or disposed of in the factory waste liquid system. Because the liquid ejected from the liquid nozzle 701 to the pseudo-dispensing port has a high degree of cleanliness, it can be recycled for reuse.

[0133] The process conditions for step 2 are shown below.

[0134] Plate heating switch: On

[0135] Plate temperature: 65℃

[0136] Chamber air supply flow rate: 0.4m³ 3 / min slightly larger

[0137] Cup exhaust flow rate: 0.4m 3 / min

[0138] Wafer rotation speed: 0 rpm

[0139] Liquid nozzle: sprays out at the pseudo-dispensing position.

[0140] Flushing nozzles: No spraying occurs.

[0141] IPA nozzle: No spraying

[0142] [Step 3]

[0143] Next, as Figure 11C As shown, the switching mechanism 160 is disconnected. This causes the temperature of the adsorption plate 120 and the wafer W to gradually decrease. Additionally, the chemical nozzle 701 is moved to directly above the center of the wafer W. The process conditions for step 3 are shown below.

[0144] Plate heating switch: Off

[0145] Board temperature: Not controlled (gradually decreases due to heat dissipation).

[0146] Chamber air supply flow rate: 0.4m³ 3 / min slightly larger

[0147] Cup exhaust flow rate: 0.4m 3 / min

[0148] Wafer rotation speed: 0 rpm

[0149] Liquid nozzle: Do not spray (move to directly above the center of wafer W)

[0150] Flushing nozzles: No spraying occurs.

[0151] IPA nozzle: No spraying

[0152] [Step 4 (Liquid film formation process and film thickness adjustment process)]

[0153] Next, as Figure 11D As shown, while the wafer W is rotating at a high speed (e.g., 500 rpm or more, specifically around 1000 rpm), a liquid solution at a temperature of around 60°C is supplied from the liquid solution nozzle 701 to the center of the wafer W. Then, the liquid solution is continuously supplied from the liquid solution nozzle 701 to the center of the wafer W, and the rotation speed of the wafer W is reduced to a low speed of around 10 rpm.

[0154] The solution supplied to the center of the rapidly rotating wafer W is instantaneously (for example, in less than 1 second) spread to the entire surface of the wafer W due to centrifugal force. As a result, the entire surface of the wafer W is covered by a thin film of solution. This stage can be considered a pre-wetting stage performed before the solution slurry formation stage described later. By instantaneously spreading the solution to the entire surface of the wafer W, the in-plane uniformity of the contact time between the wafer W surface and the solution is improved, resulting in improved in-plane uniformity of the solution processing.

[0155] Furthermore, if the solution is spread to the surface of wafer W over a relatively long period (e.g., about 5 seconds) without rotating wafer W or with wafer W rotating at a low speed, foreign matter such as particles can easily adhere to the surface of wafer W. Once adhered, these foreign matter are difficult to remove even with subsequent rinsing processes. This problem is avoided by spreading the solution to the entire surface of wafer W instantaneously, as described above.

[0156] After the entire surface of the wafer W is expanded to a high speed (e.g., above 500 rpm), the liquid solution is continuously supplied to the center of the wafer W while the rotation speed of the wafer W is reduced (e.g., less than 1 / 2 of the high speed rotation speed, specifically, for example, around 10 rpm). This allows a liquid film (also called a "liquid slurry") of the liquid solution with the desired thickness to be formed on the surface of the wafer W.

[0157] The liquid film of the chemical solution (marked with the reference symbol "CHM") should have a thickness sufficient to prevent problems with the processing result due to chemical solution evaporation. In step 4, the total amount of chemical solution supplied from the chemical solution nozzle 701 to the wafer W is, for example, 100 ml or less. Furthermore, in step 4, the temperature of the chemical solution supplied from the chemical solution nozzle 701 to the wafer W should be such that the temperature of the chemical solution present on the wafer W is maintained at approximately 60°C; for example, it can be set to a suitable temperature above room temperature and below the chemical solution processing temperature Tc.

[0158] The process conditions for step 4 are shown below.

[0159] Plate heating switch: Off

[0160] Board temperature: Not controlled (gradually decreases due to heat dissipation).

[0161] Chamber air supply flow rate: 0.4m³ 3 / min slightly larger (0.5m) 3 / min)

[0162] Cup exhaust flow rate: 0.4m 3 / min

[0163] Wafer rotation speed: 1000rpm → 10rpm

[0164] Chemical nozzle: The chemical solution is sprayed directly above the center of wafer W.

[0165] Flushing nozzles: No spraying occurs.

[0166] IPA nozzle: No spraying

[0167] In step 4, all the supplied solution is supplied to the wafer W. The total amount of solution supplied in step 4, which forms the solution slurry, is approximately 1 / 5 to 1 / 10 of the total amount of solution used in conventional solution processing steps, which involve continuously supplying temperature-adjusted solution to the rotating wafer W. In other words, compared to existing methods, a significant amount of solution can be saved in the solution processing steps of this embodiment.

[0168] In step 4, it is not limited to reducing the rotational speed of wafer W in one step (1000rpm→10rpm), but the rotational speed of wafer W can also be reduced in two or more stages (e.g., 1000rpm→100rpm→10rpm).

[0169] [Step 5 (Liquid Film Heating Process)]

[0170] Next, the wafer W is stopped rotating, and the switching mechanism 160 is turned on to supply power to the heating plate 140 to generate heat, thereby maintaining the temperature of the adsorption plate 120, the wafer W adsorbed on the adsorption plate 120, and the liquid on the wafer W at 60°C, which is the aforementioned liquid treatment temperature Tc. Additionally, as... Figure 11E As shown, the rotating stage 100 (adsorption plate 120 and wafer W) is shaken and rotated to stir the liquid solution forming a liquid film on the wafer W, promoting the reaction between the liquid solution and the surface of the wafer W and improving the uniformity of the reaction. The shaking and rotation can be configured, for example, to alternately repeat 45-degree forward rotation and 45-degree reverse rotation. The shaking angle can be changed according to the physical properties of the liquid solution (e.g., viscosity). From the viewpoint of processing uniformity, shaking and rotation are preferred, but it is also possible to simply stop the rotation without shaking and rotation.

[0171] Furthermore, at this point, the liquid nozzle 701 can return to its original position. However, in situations such as Figure 2 As shown, when the chemical nozzle 701 and the rinsing nozzle 702 are positioned at the same front end of the nozzle arm 704, the chemical nozzle 701 (and the rinsing nozzle 702) can also remain directly above the center of the wafer W. The relationship between the rinsing nozzle 702 and the drying accelerator nozzle 703 is similar in this respect.

[0172] The process conditions for step 5 are shown below.

[0173] Plate heating switch: On

[0174] Plate temperature: 60℃

[0175] Chamber air supply flow rate: 0.1 m³ / s 3 / min

[0176] Cup exhaust flow rate: 0.1m 3 / min

[0177] Wafer rotation speed: (This refers to the process of shaking and rotating the wafer.)

[0178] Liquid nozzle: No spraying

[0179] Flushing nozzles: No spraying occurs.

[0180] IPA nozzle: No spraying

[0181] During the execution of step 5, the chamber air supply flow rate and cup exhaust flow rate are reduced, for example, to 0.1 m³ / s. 3 The airflow within the processing chamber 1610 is reduced by approximately [speed] / min. This increases the partial pressure of vapors originating from the chemical solution (e.g., the partial pressure of water vapor, i.e., humidity) within the processing chamber 1610, suppressing the evaporation or volatilization of the chemical solution forming the liquid film. This prevents the partial disappearance of the liquid film on the wafer W or unacceptable concentration changes in the chemical solution. In other words, it allows for further reduction of the thickness of the liquid film (slurry) formed in step 4.

[0182] Furthermore, the flow rate of clean air CA flowing into the liquid receiving cup 800 is relatively high near the periphery of the wafer W. Therefore, the periphery of the wafer W cools more easily, leading to a tendency for the temperature distribution of the liquid within the surface of the wafer W to become uneven. By reducing the chamber air supply flow rate and the cup exhaust flow rate as described above, this tendency is mitigated, and the reaction amount of the liquid within the surface of the wafer W can be made more uniform.

[0183] In actual use, it was confirmed that the temperature range (highest temperature - lowest temperature within the W-plane of the wafer) was improved by stirring the chemical solution through shaking and rotation. As a specific example, when the chamber gas supply flow rate and cup exhaust flow rate were set to 0.4 m³ / s... 3 At a flow rate of [value missing] / min, the temperature range was 2.043℃ without stirring the drug solution by shaking and rotation, and 1.072℃ with stirring by shaking and rotation. The chamber gas supply flow rate and cup exhaust flow rate were reduced to 0.1 m³ / min. 3 At a flow rate of [value missing] / min, the temperature range was 1.377℃ without stirring the drug solution by shaking and rotation, and 0.704℃ with stirring and rotation. Furthermore, it was confirmed that with stirring and rotation, and the chamber air supply flow rate and cup exhaust flow rate were set to 0.4 m³ / min... 3 At a flow rate of 0.1 m³ / min, the etching uniformity index was 2.9. 3 At a rate of 1.9 / min, the in-plane uniformity index is 1.9, indicating a significant improvement in the uniformity of the etching solution. The etching uniformity index is based on the following formula.

[0184] Etching uniformity index = (maximum etching amount in the plane - minimum etching amount) / (average etching amount × 2)

[0185] [Step 6]

[0186] Next, as Figure 11F As shown, the switching mechanism 160 is disconnected. This causes the temperature of the adsorption plate 120 and the wafer W to gradually decrease. Additionally, the rinsing nozzle 702 (in...) Figure 11F (Not shown in the diagram) Positioned directly above the center of wafer W, or with the rinsing nozzle 702 moved directly above the center. This increases the chamber air supply flow rate and cup exhaust flow rate, for example, to 0.8 m³ / s. 3 The airflow is increased to approximately 100 m / min to enhance the airflow within the treatment chamber 1610.

[0187] The process conditions for step 6 are as follows.

[0188] Plate heating switch: Off

[0189] Board temperature: Not controlled (gradually decreases due to heat dissipation).

[0190] Chamber air supply flow rate: 0.8m 3 / min slightly larger

[0191] Cup exhaust flow rate: 0.8m 3 / min

[0192] Wafer rotation speed: 0 rpm

[0193] Liquid nozzle: No spraying

[0194] Rinse nozzle: Do not spray (move to directly above the center of wafer W).

[0195] IPA nozzle: No spraying

[0196] [Step 7]

[0197] Next, as Figure 11G As shown, while the wafer W is rotating at a relatively low speed (e.g., below 100 rpm, specifically around 30 rpm), room-temperature rinsing fluid (in this case, DIW (pure water)) is supplied from the rinsing nozzle 702 to the center of the wafer W. This washes away the chemical solution on the surface of the wafer W, stopping the reaction between the chemical solution and the wafer W surface. Because the wafer W is rotated at a low speed, splashing that might occur due to the chemical solution and rinsing fluid colliding with the liquid receiving cup 800 from the wafer W is suppressed. Therefore, liquid mist containing the chemical solution is prevented from re-adhering to the wafer W.

[0198] The process conditions for step 7 are shown below.

[0199] Plate heating switch: Off

[0200] Board temperature: Not controlled (gradually decreases due to heat dissipation and DIW).

[0201] Chamber air supply flow rate: 0.8 m³ / s 3 / min

[0202] Cup exhaust flow rate: 0.8m 3 / min

[0203] Wafer rotation speed: 10 rpm

[0204] Liquid nozzle: No spraying

[0205] Rinse Nozzle: DIW is sprayed from directly above the center of wafer W.

[0206] IPA nozzle: No spraying

[0207] [Step 8]

[0208] Next, as Figure 11HAs shown, DIW is continuously supplied to the center of wafer W from the rinsing nozzle 702, and the rotation speed of wafer W is increased to a high speed of approximately 1000 rpm. The DIW supplied to the center of the rapidly rotating wafer W extends and flows towards the periphery of wafer W, dispersing to the outer periphery. As a result, residual chemicals and reaction products on the surface of wafer W are washed away by the DIW. Furthermore, in step 7, wafer W and adsorption plate 120 are cooled by the room-temperature DIW, and their temperature drops to approximately room temperature. In step 7, the rinsing nozzle 702 is moved back and forth between a position directly above the center of wafer W and a position directly above the periphery of wafer W to ensure a uniform temperature drop for wafer W and adsorption plate 120. Additionally, when the rinsing nozzle 702 is moved back and forth, the amount of DIW ejected from the rinsing nozzle 702 can be varied according to the ejection position, thereby achieving a more uniform temperature drop.

[0209] The process conditions for step 8 are shown below.

[0210] Plate heating switch: Off

[0211] Plate temperature: Not controlled (drops to almost room temperature due to heat dissipation and DIW).

[0212] Chamber air supply flow rate: 0.8 m³ / s 3 / min

[0213] Cup exhaust flow rate: 0.8m 3 / min

[0214] Wafer rotation speed: 1000 rpm

[0215] Liquid nozzle: No spraying

[0216] Rinsing nozzle: DIW is sprayed while reciprocating between the center and periphery of wafer W.

[0217] IPA nozzle: No spraying

[0218] [Step 9]

[0219] Next, as Figure 11I As shown, the rotational speed of wafer W is maintained, and DIW is stopped from being ejected from the rinsing nozzle 702. Room temperature IPA is ejected from the drying accelerator nozzle 703, which is located directly above the center of wafer W, toward the center of wafer W. Through step 9, the rinsing liquid on wafer W is replaced by IPA ejected to the center of wafer W, and the surface of wafer W is covered with a liquid film of IPA.

[0220] During step 9, the gas supplied from the FFU is switched from clean air (air filtered through a HEPA filter) to dry air (DA) or nitrogen (N2). Dry air has the same cleanliness as clean air (CA) but a significantly lower dew point. N2 has high cleanliness and a significantly lower oxygen concentration and moisture content than clean air. In other words, the atmosphere within the processing chamber 1610 is changed to an atmosphere less prone to condensation (e.g., an atmosphere with humidity less than 1%). The chamber supply flow rate (dry air or N2 supply flow rate) and cup exhaust flow rate are set to, for example, 0.4 m³ / s. 3 Approximately / min.

[0221] The process conditions for step 9 are shown below.

[0222] Plate heating switch: Off

[0223] Plate temperature: Not controlled (almost room temperature)

[0224] Chamber air supply flow rate: 0.4m³ 3 / min slightly larger

[0225] Cup exhaust flow rate: 0.4m 3 / min

[0226] Wafer rotation speed: 1000 rpm

[0227] Liquid nozzle: No spraying

[0228] Flushing nozzles: No spraying occurs.

[0229] IPA nozzle: IPA is ejected directly above the center of wafer W.

[0230] [Step 10]

[0231] Next, as Figure 11J As shown, room-temperature IPA is continuously supplied to the center of wafer W from the drying accelerator nozzle 703, while the rotational speed of wafer W is reduced to a low speed of approximately 10 rpm. By maintaining a continuous supply of IPA to the center of wafer W and reducing the rotational speed of wafer W, a liquid film of IPA (also referred to as "IPA slurry") of the desired thickness can be formed on the surface of wafer W. The IPA liquid film only needs to be of a thickness sufficient to prevent problems with the processing results due to IPA evaporation. At this time, the chamber air supply flow rate (dry air or N2 gas supply flow rate) and the cup exhaust flow rate are set, for example, to 0.1 m³ / s. 3 / min~0.4m 3 An appropriate value within the range of approximately [value] / min. The chamber gas supply flow rate should be approximately equal to the cup exhaust flow rate (preferably slightly higher).

[0232] In step 10 (as in step 9), by supplying IPA at room temperature, the cleanliness of the IPA supplied to wafer W can be improved. When IPA is supplied in a heated state, the heated IPA passes through a filter in the processing liquid supply mechanism that supplies IPA to the drying accelerator nozzle 703. At this time, the filtration efficiency of the filter substantially decreases due to reasons such as impurities precipitated at room temperature dissolving in the heated IPA. This problem can be solved by supplying IPA at room temperature. After step 10 is completed, the drying accelerator nozzle 703 can be retracted to its original position.

[0233] The process conditions for step 10 are as follows.

[0234] Plate heating switch: Off

[0235] Plate temperature: Not controlled (approximately room temperature)

[0236] Chamber air supply flow rate: 0.1~0.4m³ 3 / min (dry air or N2 gas)

[0237] Cup exhaust flow rate: 0.1~0.4m 3 / min

[0238] Wafer rotation speed: 10 rpm

[0239] Liquid nozzle: No spraying

[0240] Flushing nozzles: No spraying occurs.

[0241] IPA nozzle: IPA is ejected directly above the center of wafer W.

[0242] [Step 11]

[0243] Next, as Figure 11K As shown, the wafer W is stopped from rotating, the switching mechanism 160 is turned on, and electricity is supplied to the heating plate 140 to heat it up. This heats the adsorption plate 120, the wafer W adsorbed on the adsorption plate 120, and the IPA on the wafer W to, for example, approximately 78°C. At this time, the rotating stage 100 (adsorption plate 120 and wafer W) can be rotated or left stationary. The chamber gas supply flow and cup exhaust flow are maintained at a low flow rate to suppress the evaporation or volatilization of the IPA forming the liquid film. This prevents the partial disappearance of the liquid film at undesirable locations on the wafer W. By raising the temperature of the IPA, the surface tension of the IPA decreases, and the pattern collapse suppression effect in step 13 (described later) is enhanced. Furthermore, by raising the temperature of the IPA, substances soluble in the IPA dissolve in it, thus suppressing particle formation.

[0244] The process conditions for step 11 are as follows.

[0245] Plate heating switch: On

[0246] Plate temperature: 78℃

[0247] Chamber air supply flow rate: 0.1~0.4m³ 3 / min (dry air or N2 gas)

[0248] Cup exhaust flow rate: 0.1~0.4m 3 / min

[0249] Wafer rotation speed: 0 rpm (or oscillating rotation)

[0250] Liquid nozzle: No spraying

[0251] Flushing nozzles: No spraying occurs.

[0252] IPA nozzle: No spraying

[0253] [Step 12]

[0254] Next, as Figure 11L As shown, the switching mechanism 160 is disconnected. This causes the temperature of the adsorption plate 120 and the wafer W to gradually decrease. This increases the chamber gas supply flow rate and the cup exhaust flow rate, for example, to 0.4 m³ / s. 3 The airflow rate is increased to approximately [value] / min within the treatment chamber 1610. The process conditions for step 12 are as follows.

[0255] Plate heating switch: Off

[0256] Board temperature: Not controlled (gradually decreases due to heat dissipation).

[0257] Chamber air supply flow rate: 0.4m³ 3 / min slightly larger

[0258] Cup exhaust flow rate: 0.4m 3 / min

[0259] Wafer rotation speed: 0 rpm

[0260] Liquid nozzle: No spraying

[0261] Flushing nozzles: No spraying occurs.

[0262] IPA nozzle: No spraying

[0263] [Step 13]

[0264] Next, as Figure 11MAs shown, wafer W is rotated at a high speed of approximately 1000–1500 rpm, thereby removing the IPA from the surface of wafer W. The process conditions for step 8 are shown below.

[0265] Plate heating switch: Off

[0266] Board temperature: Not controlled (gradually decreases due to heat dissipation).

[0267] Chamber air supply flow rate: 0.4m³ 3 / min slightly larger

[0268] Cup exhaust flow rate: 0.4m 3 / min

[0269] Wafer rotation speed: 1000 rpm

[0270] Liquid nozzle: No spraying

[0271] Flushing nozzles: No spraying occurs.

[0272] IPA nozzle: No spraying

[0273] [Step 14 (Wafer Removal Process)]

[0274] After the wafer W is dried, as Figure 11N As shown, the gas supplied from the FFU is changed from dry air to clean air, increasing the chamber supply flow rate and cup exhaust flow rate, for example, to 0.8 m³ / s. 3 At approximately 1000 m / min, the airflow within the processing chamber 1610 is further intensified. Then, the wafer W is stopped rotating, and the wafer W is removed from the processing unit 16 by the arm of the substrate transport device 17.

[0275] The process conditions for step 14 are shown below.

[0276] Plate heating switch: Off

[0277] Board temperature: Not controlled (gradually decreases due to heat dissipation).

[0278] Chamber air supply flow rate: 0.8m 3 / min slightly larger

[0279] Cup exhaust flow rate: 0.8m 3 / min

[0280] Wafer rotation speed: 0 rpm

[0281] Liquid nozzle: No spraying

[0282] Flushing nozzles: No spraying occurs.

[0283] IPA nozzle: No spraying

[0284] Also refer to Figure 2 The following details the wafer removal process. First, the switching device (three-way valve) 156 is switched to change the connection of the suction pipe 155W from the suction device 157W to the purge gas supply device 159. As a result, purge gas is supplied to the suction flow path 121P on the lower surface of the board, and to the recessed area 125W on the upper surface 120A of the adsorption plate 120 via the suction flow path 122W on the lower surface of the substrate. This releases the wafer W from the adsorption plate 120.

[0285] Along with the above operations, the adsorption of the adsorption plate 120 onto the heating plate 140 is also released. Alternatively, the adsorption of the adsorption plate 120 onto the heating plate 140 may not be released at the end of each wafer W processing, and therefore the piping system may be modified to not perform this adsorption release.

[0286] Next, the lifting pin 211 is raised to the junction position. Since the wafer W's adsorption to the adsorption plate 120 is released by the above-described purging, the wafer W can be easily removed from the adsorption plate 120. Therefore, damage to the wafer W can be prevented.

[0287] Next, use the arm of the substrate transfer device 17 (refer to Figure 1 and Figure 11N The wafer W carried on the lifting pin 211 is lifted and moved outside the processing unit 16. Then, the wafer sensor 860 confirms that the wafer W is not on the adsorption plate 120.

[0288] [Step 15]

[0289] Next, as Figure 11O As shown, the chamber air supply flow and cup exhaust flow are maintained in the same manner, and the rinsing nozzle 702 is moved to directly above the center of the adsorption plate 120 of the rotary table 100. The rotary table 100 is rotated at a speed of approximately 1000 rpm or less. In this state, DIW as a rinsing fluid is supplied from the rinsing nozzle 702 to the center of the adsorption plate 120 to clean the surface of the adsorption plate 120. By performing this cleaning, contamination of the back side of the next wafer W to be processed can be prevented.

[0290] In step 15, the adsorption plate 120 loses heat to the DIW at room temperature, and its temperature drops to approximately room temperature. In step 14, the rinsing nozzle 702 can also be moved back and forth between a position directly above the center of the adsorption plate 120 and a position directly above the periphery of the wafer W. This allows for uniform cleaning of the entire surface of the adsorption plate 120, and also allows for a uniform temperature drop in the adsorption plate 120.

[0291] The process conditions for step 15 are shown below.

[0292] Plate heating switch: Off

[0293] Board temperature: Not controlled (gradually decreases due to heat dissipation and DIW).

[0294] Chamber air supply flow rate: 0.8m 3 / min slightly larger

[0295] Cup exhaust flow rate: 0.8m 3 / min

[0296] Wafer rotation speed: ~1000 rpm

[0297] Liquid nozzle: No spraying

[0298] Rinsing nozzle: sprays out (fixed at the center of wafer W or moving between the center and the periphery of wafer W).

[0299] IPA nozzle: No spraying

[0300] [Step 16]

[0301] Next, as Figure 11P As shown, the ejection of DIW from the rinsing nozzle 702 is stopped, and the rotary table 100 is rotated at a high speed of approximately 1000 to 1500 rpm, thereby spun dry the surface of the adsorption plate 120. Through the above process, one cycle (steps 1 to 16) in the processing unit 16 is completed. If there are wafers that need to be processed next, return to step 1.

[0302] The process conditions for step 16 are shown below.

[0303] Plate heating switch: Off

[0304] Plate temperature: Not controlled (room temperature)

[0305] Chamber air supply flow rate: 0.8m 3 / min slightly larger

[0306] Cup exhaust flow rate: 0.8m 3 / min

[0307] Wafer rotation speed: 1000~1500rpm

[0308] Liquid nozzle: No spraying

[0309] Flushing nozzles: No spraying occurs.

[0310] IPA nozzle: No spraying

[0311] <First Modified Implementation>

[0312] In the above embodiment, in steps 4 and 5, heated pharmaceutical solution is supplied from the pharmaceutical solution nozzle 701, but room temperature pharmaceutical solution can also be supplied. By supplying room temperature pharmaceutical solution, a pharmaceutical solution with high purity can be supplied. The reason (the same reason as for supplying room temperature IPA in step 10) is that substances that would dissolve in the pharmaceutical solution at high temperatures precipitate at room temperature, thus allowing for efficient filtration using the filter provided in the pharmaceutical solution supply system, which includes the pharmaceutical solution supply mechanism 701B. Furthermore, in this case, the wafer W is cooled by the room temperature pharmaceutical solution, therefore, time is required in step 5 to heat the pharmaceutical solution and the wafer W to the pharmaceutical solution processing temperature Tc.

[0313] In most cases, the chemical supply system for supplying temperature-adjusted chemical solutions includes a chemical solution storage tank, a circulation pipeline connected to the storage tank, a pump, a heater, and a filter installed in the circulation pipeline. The system is configured to deliver the processed solution to the processing unit via branch pipelines branching off from the circulation pipeline. If room-temperature chemical solutions are supplied to the processing unit, the room-temperature solutions can be circulated and filtered using a filter, thereby improving the cleanliness of the chemical solutions circulating in the tank and circulation pipeline. Furthermore, by not circulating the temperature-adjusted chemical solutions, the problem of changes in the composition or concentration of the chemical solutions caused by evaporation of components can be eliminated. Additionally, if room-temperature chemical solutions are supplied, a heater is not required in the circulation pipeline, and the chemical solutions can be supplied to the processing unit directly from the tank without using the circulation pipeline. Therefore, this also has the effect of reducing the cost of the substrate processing system.

[0314] <Second Modified Implementation>

[0315] In the above embodiment, the liquid film (slurry) of IPA formed in step 10 is heated by uniformly heating the entire wafer W in step 11, and then removed by spinning in step 13, but this is not a limitation. Alternatively, the wafer W may not be rotated, but... Figure 12 The schematic diagram shows the use of Marangoni force to remove the liquid film of IPA. Furthermore, in Figure 12 In the heating plate 140, there are four concentric heating zones Z1, Z2, Z3, and Z4. The innermost heating zone Z1 is circular, while the outermost heating zones Z2, Z3, and Z4 are annular. Furthermore, heating zones Z2, Z3, and Z4 can be connected by a previously referenced... Figure 3 This is achieved by heating the 10 heating zones 143-1 to 143-10 that are in the same radial position.

[0316] First, such as Figure 12As shown in (A), power is supplied to the heating plate 140 to form a temperature distribution such that the heating zone ZA in the center of the wafer W has the highest temperature (e.g., above 80°C), and the temperature decreases (L) as it approaches the periphery of the wafer W. Figure 12 In the diagram, the thin solid lines in the shape of steps marked with reference mark Ts represent the set temperature of each heating zone (ZA~Z4), and the thick solid lines in the shape of curves represent the actual temperature distribution on the surface of the adsorption plate 120 (i.e., the wafer W).

[0317] Next, as Figure 12 As shown in (B), the drying core DC is formed by blowing an inactive gas, such as nitrogen (N2), from the gas nozzle 706. The gas nozzle 706 used here can be supported by the nozzle arm 704 of the aforementioned support nozzles 701-703, or by other nozzle arms not shown. Furthermore, by forming... Figure 12 The temperature distribution shown in (A) allows for the formation of a dry core even without gas blowing, but gas blowing is preferred to form a dry core of appropriate size at an appropriate position in the center of the wafer W at an appropriate timing.

[0318] Due to the aforementioned temperature gradient, the DC of the drying core gradually expands outward in the radial direction. At this time, by making the temperature distribution as follows... Figure 12 As shown in (C) to (E), the Marangoni force can be used to efficiently expand the drying core DC. Specifically, the temperature distribution is controlled so that the temperature of the gas-liquid interface B (the boundary between the IPA liquid film on the surface of wafer W and the drying core) and its radially inner region is the highest, and the temperature of this region is approximately 90°C. Thus, with the gas-liquid interface B as the boundary, the temperature is relatively high on the drying core DC side, which is radially inner, resulting in low surface tension; conversely, the temperature is relatively low on the IPA liquid film side, which is radially outer, resulting in high surface tension. Therefore, the IPA liquid film moves radially outward using the Marangoni force as the driving force. As the gas-liquid interface B gradually moves radially outward, by repeatedly raising the temperature of the outermost heating zone to 90°C when the gas-liquid interface B moves from a certain heating zone to the heating zone closest to that zone, it is possible to maintain the liquid temperature of the IPA near the gas-liquid interface B at approximately 90°C while continuously moving the gas-liquid interface B radially outward. During this process, the IPA on wafer W is either spilled or evaporated from the periphery of wafer W outwards. Ultimately, as... Figure 12 As shown in (E), the drying core (DC) extends to the periphery of wafer W, where wafer W is dried.

[0319] During the drying process described above, the IPA forming a liquid film remains in a flowable state and moves outward in the radial direction. Due to the flowability of IPA, particles P (in the IPA liquid film) present in the IPA liquid film... Figure 12(Represented by a dot) can move to the outer radial direction along with the movement of the IPA liquid film. Therefore, it can suppress residual particles P on the surface of wafer W.

[0320] In the second modified embodiment, steps 1 to 10 described above are the same as in the aforementioned embodiment. Then, step 11A is performed instead of steps 11 to 13. After step 11A is completed, step 14 is performed.

[0321] The process conditions for step 11A are as follows.

[0322] Plate heating switch: On

[0323] Plate temperature: 100℃ (zone temperature control below)

[0324] Chamber air supply flow rate: 0.2–0.4 m³ / h 3 / min (supply of dry air or N2 gas)

[0325] Cup exhaust flow rate: 0.2~0.4m 3 / min

[0326] Wafer rotation speed: 0 rpm

[0327] Liquid nozzle: No spraying

[0328] Flushing nozzles: No spraying occurs.

[0329] IPA nozzle: No spraying

[0330] Furthermore, in the case where the liquid film of IPA is removed by slinging as in step 13 of the aforementioned embodiment, when the rotational speed of the wafer W is increased, the liquid film of IPA immediately becomes thinner, and the particles present in the liquid film of IPA become difficult to move outward in the radial direction of the wafer in the liquid film of IPA. Therefore, compared with the second modified embodiment, there is a tendency for particles to remain on the surface of the wafer W.

[0331] In the actual device, the increase in particles with a size greater than 19 nm averaged 33 when steps 11 to 13 were performed, compared to an average of 12.3 when step 11A was performed, confirming a significant improvement.

[0332] <Third Modified Implementation>

[0333] Alternatively, power can be supplied to the heater 142 of the heating plate 140 via a power transmission mechanism that can supply power to the heater 142 even when the rotary table is rotating continuously in one direction, instead of the switching mechanism 160 which cannot supply power when the rotary table is rotating. Several structural examples of such a power transmission mechanism will be described below.

[0334] Reference Figure 13 Action principle diagram and Figure 14 The axial cross-sectional view is used to illustrate the power transmission mechanism 910 involved in the first structural example. The power transmission mechanism 910 is a contact-type power transmission mechanism. The power transmission mechanism is arranged coaxially with the rotary joint 151, preferably assembled in the rotary joint 151 or integrated with the rotary joint 151.

[0335] like Figure 13 As shown, the power transmission mechanism 910 has a structure similar to a rotary bearing (ball bearing or roller bearing), having an outer ring 911, an inner ring 912, and a plurality of rotating elements (e.g., balls) 913. The outer ring 911, inner ring 912, and rotating elements 913 are formed of a conductive material (conductor). Preferably, a moderate preload is applied between the structural elements (911, 912, 913) of the power transmission mechanism 910. This ensures more stable conduction between the outer ring 911 and the inner ring 912 via the rotating elements 913.

[0336] exist Figure 14 The diagram shows a specific example of a rotary joint 151 assembled with a power transmission mechanism 910 based on the aforementioned operating principle. The rotary joint 151 has a lower member 151B and an upper member 151A. The lower member 151B is fixed to a frame or a bracket (not shown) fixed to the frame, which is housed within a housing 1601. The upper member 151A is fixed to a rotary table 100 or a member (not shown) that rotates in conjunction with the rotary table 100.

[0337] Figure 14 The structure of the rotary joint 151 shown is well-known and will be described simply. Specifically, a cylindrical central protrusion 152B of the lower member 151B is inserted into the cylindrical central hole 152A of the upper member 151A. The central protrusion 152B is supported on the upper member 151A via a pair of bearings 153. A number of protrusions corresponding to the type of gas to be processed are formed on the inner circumferential surface of the central hole 152A. Figure 14 The circumferential groove 154A contains two gases, GAS1 and GAS2 (but is not limited to these). Sealing rings 155S are provided on both sides of each circumferential groove 154A to prevent gas leakage.

[0338] Gas passages 156A, each communicating with a plurality of circumferential grooves 154A, are formed within the upper component 151A. The end of each gas passage 156A is a gas outlet port 157A. A plurality of circumferential grooves 154B are provided on the outer circumferential surface of the central protrusion 152B at axial positions corresponding to the plurality of circumferential grooves 154A. Gas passages 156B, each communicating with a plurality of circumferential grooves 154B, are formed within the lower component 151B. The end of each gas passage 156B is a gas inlet port 157B.

[0339] according to Figure 14 The structure shown allows gas to flow between the gas inlet port 157B and the gas outlet port 157A with substantially no gas leakage, even when the upper member 151A and the lower member 151B are rotating. It also allows for the transfer of attractive force between the gas inlet port 157B and the gas outlet port 157A.

[0340] A power transmission mechanism 910 is assembled between the upper component 151A and the lower component 151B of the rotary joint 151. Figure 14 In this example, the outer ring 911 is embedded (e.g., pressed into) the cylindrical recess of the lower member 151B, and the cylindrical outer circumferential surface of the upper member 151A is embedded (e.g., pressed into) the inner ring 912. Appropriate electrical insulation is applied between the outer ring 911 and the lower member 151B, and between the upper member 151A and the inner ring 912.

[0341] The outer ring 911 is electrically connected to the power supply (or power control unit) 915 via wire 916, and to the heater 142 of the heating plate 140 via wire 914. Furthermore, in Figure 14 In this example, the inner ring 912 is a rotating component that rotates integrally with the rotary table 100, while the outer ring 911 is a non-rotating component. The power supply 915 can be... Figure 2 Part of the power supply unit 300 shown in the figure.

[0342] exist Figure 14 In the structure shown, multiple power supplies can also be provided by arranging the rotating bearings of the power transmission mechanism 910 in a manner that isolates them from each other in the axial direction. In this case, multiple heating zones 143-1 to 143-10 of the heating plate 140 can be powered independently.

[0343] When applying the first structural example of the third modified embodiment, Figure 2 The rotary joint 151 and switching mechanism 160 of the processing unit 16 shown are replaced with Figure 13 and Figure 14 The institution listed in the document is sufficient.

[0344] Next, refer to Figure 15To illustrate the power transmission mechanism 920 involved in the second structural example. The power transmission mechanism 920 is also a contact-type power transmission mechanism. Figure 15 The power transmission mechanism 920 shown is itself composed of a known slip ring and is configured to provide multiple power supplies. In this case, it is also possible to provide independent power to the multiple heating zones 143-1 to 143-10 of the heating plate 140.

[0345] The slip ring is composed of a rotating ring as a conductor and a brush. The slip ring consists of a fixed part 921 and a rotating part 922. The fixed part 921 is fixed to a frame or a bracket (neither shown) fixed to the frame, which is housed within a housing 1601. The rotating part 922 is fixed to a rotating platform 100 or a component (not shown) that rotates in conjunction with the rotating platform 100. Multiple terminals are provided on the side peripheral surface of the fixed part 921, and these terminals are connected to multiple wires 923 electrically connected to a power supply or power control unit (not shown). Multiple wires 924, each conductive to one of the terminals, extend from the axial end face of the rotating part 922 and are electrically connected to the heater elements 142e of each heating zone 143-1 to 143-10 of the heating plate 140.

[0346] exist Figure 15 In the structural example, the lower member 151B of the rotary joint 151 is configured as a hollow member having a through hole 158 at its center. A power transmission mechanism 920 configured as a slip ring is stored inside the through hole. Figure 14 Similarly, in this structural example, the lower member 151B of the rotary joint 151 is fixed to a frame or a bracket (neither shown) that is fixed to the frame, which is housed within the housing 1601. Additionally, the upper member 151A of the rotary joint 151 is fixed to the rotary table 100 or a member (not shown) that rotates in conjunction with the rotary table 100.

[0347] When applying the second structural example of the third modified embodiment, Figure 2 The rotary joint 151 and switching mechanism 160 of the processing unit 16 shown are replaced with Figure 15 The institution listed in the document is sufficient.

[0348] As a third structural example of a power transmission mechanism, a wireless (non-contact) power transmission mechanism utilizing electromagnetic induction or magnetic resonance via magnetic coupling can also be used (such power transmission mechanisms are known in themselves). In this case, the wireless power transmission mechanism, such as... Figure 2The diagram schematically illustrates a circumferentially extending, spaced-apart, supply coil 903 and receiving coil 902. Ferrite sheets (not shown) are mounted around the supply coil 903 and receiving coil 902 to concentrate magnetic flux and prevent magnetic field leakage. The supply coil 903 can be mounted on a non-rotating component, such as a fixed outer cup element 801, while the receiving coil 902 can be mounted on a rotating component, such as a support plate 170. The receiving coil 902 is electrically connected to the heater 142 of the heating plate 140 via a wire (not shown). The supply coil 903 is electrically connected to a power source (or power control unit) (not shown) via a wire (not shown).

[0349] When using the aforementioned contactless power transmission mechanism, it is also possible to provide multiple power supplies by setting multiple sets of power supply coils 903 and power receiving coils 902.

[0350] When applying the third structural example of the third modified embodiment, Figure 2 The switching mechanism 160 of the processing unit 16 shown is replaced with Figure 2 The power transmission mechanisms (902, 903) described in the document are sufficient.

[0351] When applying the first to third structural examples of the third modified embodiments, a control module (not shown) can be installed at an appropriate location within the space S between the heating plate 140 and the support plate 170. This control module is used to control the distributor that distributes the power transmitted via the power transmission mechanism to multiple heating zones and to supply power to each heating zone. Thus, even if the power transmission mechanism is a single-path mechanism, it is possible to independently supply power to the multiple heating zones 143-1 to 143-10 of the heating plate 140.

[0352] When the power transmission mechanism is configured to perform multiple power transmissions, one or more transmission paths can also be used to transmit control signals or detection signals, or to ground.

[0353] When applying the structure described in the third modified embodiment, the aforementioned liquid processing of wafer W (steps 1 to 16, as well as the steps described in the first and second modified embodiments) can also be performed. In this case, even without stopping the wafer W from rotating, power can be supplied to the heater 142 of the heating plate 140. Therefore, in the step of stopping the rotary table or rotating the rotary table to heat the wafer W and / or the processing liquid (e.g., step 11), the wafer W can be rotated, for example, at a low speed.

[0354] It should be considered that all points in the embodiments disclosed herein are illustrative rather than restrictive. The above embodiments may be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

[0355] The substrate being processed is not limited to semiconductor wafers; it can also be other substrates, such as glass substrates, ceramic substrates, or any type of substrate that can be used in the manufacture of semiconductor devices.

Claims

1. A substrate processing method, performed using a substrate processing apparatus, the substrate processing apparatus comprising: a rotary table for holding a substrate in a horizontal position and for rotating the substrate about a vertical axis; an electric heater disposed on the rotary table in a manner that rotates together with the rotary table for heating the substrate placed on the rotary table; at least one processing liquid nozzle for supplying processing liquid to the surface of the substrate held on the rotary table; and a processing liquid supply mechanism for supplying the processing liquid to the processing liquid nozzle, the substrate processing method comprising the following steps: The substrate holding process holds the substrate on a rotary table; In the liquid film formation process, while the rotary table is rotated at a first speed, a liquid medicine as the processing liquid is supplied to the center of the substrate, thereby covering the entire surface of the substrate with a liquid film of the liquid medicine having a first thickness. In the liquid film thickness adjustment process, after the liquid film formation process, while rotating the rotary table at a second speed lower than the first speed, the liquid medicine is supplied to the center of the substrate, thereby covering the entire surface of the substrate with a liquid film of the liquid medicine having a second thickness greater than the first thickness; and In the liquid film heating process, after the liquid film thickness adjustment process, the rotating table is heated by the electric heater while the rotating table is rotating at a third speed below the second speed, or while the rotating table is oscillating, or while the rotating table is stopped. This heats the substrate and the liquid film of the drug covering the substrate to promote the reaction between the drug and the surface of the substrate.

2. The substrate processing method according to claim 1, characterized in that, The substrate processing apparatus further comprises: A switching mechanism having a receiving electrode electrically connected to the electric heater and rotating together with the rotary table, a supply electrode in contact with the receiving electrode to supply driving power to the electric heater via the receiving electrode, and an electrode moving mechanism for separating the supply electrode from the receiving electrode. as well as A power supply unit, which supplies the driving power to the power supply electrodes; The switching mechanism is configured such that when the power supply electrode and the power receiving electrode are in contact, the rotary table can rotate within a limited angular range, but the rotary table cannot rotate continuously; and it is configured such that when the power supply electrode and the power receiving electrode are separated, the rotary table can rotate indefinitely. The liquid film formation process and the liquid film thickness adjustment process are performed while the power supply electrode and the power receiving electrode are separated. After the liquid film thickness adjustment process, the rotation of the rotary table is stopped and the power supply electrode is brought into contact with the power receiving electrode. The liquid film heating process is performed while the power supply electrode is in contact with the power receiving electrode, and the liquid film heating process is performed while the substrate is rocked and rotated within the defined angle range.

3. The substrate processing method according to claim 1, characterized in that, The first speed is above 500 rpm, and the second speed is less than half of the first speed.

4. The substrate processing method according to claim 2, characterized in that, The process includes a preheating step after the substrate holding step and before the liquid film forming step, in which the rotating stage and the substrate on the rotating stage are heated while the power supply electrode is in contact with the power receiving electrode. After the preheating process and before the liquid film formation process, a process is performed to separate the power supply electrode from the power receiving electrode.

5. The substrate processing method according to claim 4, characterized in that, In the preheating process, the substrate is heated to a temperature ΔT°C higher than the substrate temperature in the liquid film heating process, and then the liquid film forming process is performed, wherein T is below 10°C.

6. The substrate processing method according to any one of claims 1 to 5, characterized in that, The liquid solution supplied to the substrate in the liquid film formation process and the liquid film thickness adjustment process was not heated or temperature-controlled.

7. The substrate processing method according to any one of claims 1, 3, 4, and 5, characterized in that, It also includes the following processes: In the rinsing process, after the liquid film heating process, rinsing liquid is supplied to the substrate to remove the drug solution from the substrate; In a solvent replacement process for drying, after the rinsing process, a solvent for drying with a lower surface tension and higher volatility than the rinsing liquid is supplied to the substrate to replace the rinsing liquid on the substrate with the solvent for drying; and In the drying process, after the solvent replacement process, the solvent for drying is removed from the substrate to dry the substrate. The drying process includes heating the rotating table to create a temperature gradient on the substrate, where the temperature is high in the center and low in the periphery.

8. The substrate processing method according to claim 2, characterized in that, It also includes the following processes: In the rinsing process, after the liquid film heating process, rinsing liquid is supplied to the substrate to remove the drug solution from the substrate; In a solvent replacement process for drying, after the rinsing process, a solvent for drying with a lower surface tension and higher volatility than the rinsing liquid is supplied to the substrate to replace the rinsing liquid on the substrate with the solvent for drying; and In the drying process, after the solvent replacement process, the solvent for drying is removed from the substrate to dry the substrate. The drying process includes heating the rotating table to create a temperature gradient on the substrate, where the temperature is high in the center and low in the periphery.

9. The substrate processing method according to claim 7, characterized in that, The drying process is performed with the rotary table either stopped or with the rotary table oscillating.

10. The substrate processing method according to claim 8, characterized in that, The drying process is performed with the rotary table either stopped or with the rotary table oscillating.

11. The substrate processing method according to claim 10, characterized in that, The drying process is performed while the power supply electrode is in contact with the power receiving electrode.

Images