Method of manufacturing a pattern and pattern substrate

Abstract

The present invention provides a method for manufacturing a pattern, which includes: performing patterning on the photoresist film to expose a part of the top surface of the metal film to obtain an exposed metal top surface, and then using an ion bombardment process to process the exposed metal top surface to form N metal hard mask strips in the photoresist film. After removing the photoresist film, using the N metal hard mask strips as masks, sequentially etching the hard mask and the target film, and removing a part of the pattern of each initial target pattern with the top surface of the target film as the stop position, so as to obtain a plurality of target patterns arranged on the top surface of the substrate. The process is simple and easy to control, solving the problems of high cost, low production efficiency, and complex manufacturing process for producing small-sized patterns. The present invention also provides a pattern substrate obtained by the pattern manufacturing method.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor pattern manufacturing, and particularly to a pattern manufacturing method and a pattern substrate. Background Art

[0002] In traditional advanced CMOS processes, lithography and etching technologies are used to form patterns, and advanced lithography machines with shorter wavelengths are continuously used to achieve patterns with small line widths. Currently, the most advanced lithography machines in the industry are already using 13.5 nm lithography machines (Extreme Ultraviolet, EUV) to achieve patterns with small line widths. However, as the line width of the pattern decreases, its cost will become higher and higher, including high lithography machine costs, lithography process costs, and huge power consumption costs of EUV. Although relatively low-cost lithography machines can be used to manufacture small-sized patterns through multiple patterning technologies, one lithography of this technology requires the use of multiple photomasks and corresponding process steps, resulting in a significant increase in cost, a great decrease in production capacity, and a significant reduction in the production efficiency of small-sized patterns.

[0003] The patent application of the invention patent with the publication number CN102915960A discloses a method for manufacturing a metal interconnect structure, including: forming a dielectric layer, a first buffer layer, a first hard mask layer, a second buffer layer, and a second hard mask layer from bottom to top on a semiconductor substrate, the linear patterns of the second hard mask layer and the first hard mask layer intersect with each other, and jointly define the positions and sizes of the first and second contact holes; forming a first photoresist pattern on the second hard mask layer to expose the position where the first contact hole is located, etching until the dielectric layer is exposed to form a first through hole; then forming a second photoresist pattern to expose the position where the second contact hole is located, and etching to form a second through hole; etching the dielectric layer with the patterns of the first and second through holes to form the first contact hole and the second contact hole; and then forming a trench connecting the first and second contact holes. This invention uses a through-hole mask structure to define the size of the contact hole, and multiple lithographies and etchings are used to separately open through holes with a relatively short distance, which can break through the limitations of the existing lithography machine technology nodes. However, both the first hard mask and the second hard mask layer of this invention are formed by a self-aligned double-exposure process, and the manufacturing process is complex and the production efficiency is not high.

[0004] Therefore, it is necessary to provide a pattern manufacturing method and a pattern substrate to solve the problems existing in the above-mentioned prior art. Summary of the Invention

[0005] The purpose of the present invention is to provide a pattern manufacturing method and a pattern substrate to solve the problems of high cost, low production efficiency, and complex manufacturing process for producing small-sized patterns.

[0006] To achieve the above purpose, the pattern manufacturing method of the present invention includes the steps:

[0007] S1: Deposit a target thin film, a hard mask, a metal thin film covering the top surface of the hard mask, and a photoresist thin film on a substrate in sequence. Perform patterning on the photoresist thin film to expose a part of the top surface of the metal thin film to obtain a metal-exposed top surface.

[0008] S2: Process the metal-exposed top surface using an ion bombardment process to form N metal hard mask strips within the photoresist thin film, where N is a positive integer greater than 0.

[0009] S3: After removing the photoresist thin film, use the N metal hard mask strips as masks to sequentially etch the hard mask and the target thin film to obtain a number of initial target patterns.

[0010] S4: Remove the remaining metal hard mask strips and the hard mask to obtain a number of target patterns disposed on the top surface of the substrate.

[0011] The beneficial effect of the pattern manufacturing method of the present invention is as follows: In step S1, patterning is performed on the photoresist thin film to expose a part of the top surface of the metal thin film to obtain a metal-exposed top surface, and in step S2, the metal-exposed top surface is processed using an ion bombardment process to form N metal hard mask strips within the photoresist thin film, so that through steps S3 and S4, after removing the photoresist thin film, the N metal hard mask strips can be used as masks to sequentially etch the hard mask and the target thin film, and the remaining metal hard mask strips and the hard mask are removed with the top surface of the target thin film as the stop position, thereby obtaining a number of target patterns disposed on the top surface of the substrate. The process is simple and easy to control, solving the problems of high cost, low production efficiency, and complex manufacturing process for producing small-sized patterns.

[0012] Preferably, in step S2, the step of processing the metal-exposed top surface using an ion bombardment process includes: controlling the ion beam to act on the metal-exposed top surface at N different predetermined incident angles respectively to form the N metal hard mask strips, and the predetermined incident angle is the acute angle between the ion beam and the metal-exposed top surface. The beneficial effect is: simplifying the process.

[0013] Further preferably, the step of controlling the ion beam to act on the metal-exposed top surface at N different predetermined incident angles respectively to form the N metal hard mask strips includes: controlling the ion beam to complete different ion bombardment processes at sequentially increasing different predetermined incident angles to form the N metal hard mask strips.

[0014] More preferably, the step of controlling the ion beam to act on the exposed top surface of the metal at N different predetermined incident angles to form N metal hard mask strips includes: controlling the ion beam to complete different ion bombardment processes at different predetermined incident angles and different intensities to form the N metal hard mask strips.

[0015] More preferably, the directions of the ion beam acting on the exposed top surface of the metal at the predetermined incident angle are parallel to each other.

[0016] More preferably, in the step S1, the step of patterning the photoresist film to expose a part of the top surface of the metal film to obtain an exposed top surface of the metal includes: performing the patterning on the photoresist film starting from the top surface near the edge on one side of the photoresist film, so as to expose a part of the top surface of the metal film near the edge to obtain an exposed top surface of the metal near the edge.

[0017] More preferably, in the step S1, the step of patterning the photoresist film to expose a part of the top surface of the metal film to obtain an exposed top surface of the metal includes: performing the patterning on the middle part of the photoresist film, so as to expose the middle top surface of the metal film to obtain an exposed top surface of the metal in the middle.

[0018] More preferably, the photoresist film includes a first photoresist film and a second photoresist film located on both sides of the exposed top surface of the metal in the middle. The step of controlling the ion beam to act on the exposed top surface of the metal at N different predetermined incident angles to form N metal hard mask strips includes:

[0019] Controlling the ion beam to act on the exposed top surface of the metal in the middle within a first orientation range, and performing M times of the ion bombardment process to sequentially form M metal hard mask strips with sequentially decreasing distances from the exposed top surface of the metal in the first photoresist film, where M is a positive integer greater than 0 and less than N;

[0020] Then controlling the ion beam to act on the exposed top surface of the metal in the middle within a second orientation range, and performing N - M times of the ion bombardment process to sequentially form N - M metal hard mask strips with sequentially decreasing distances from the exposed top surface of the metal in the second photoresist film.

[0021] Further preferably, the step of controlling the ion beam to act on the top surface of the exposed metal at N different predetermined incident angles to form the N metal hard mask strips includes: controlling the ion beam to act on the top surface of the middle exposed metal at different incident directions around a virtual axis perpendicular to the substrate and performing M ion bombardment processes to sequentially form M metal hard mask strips distributed around the virtual axis in the photoresist film, where M is a positive integer greater than 0 and less than or equal to N.

[0022] Preferably, in the step S1, the hard mask includes a plurality of hard mask layers stacked on top of each other.

[0023] Further preferably, in the step S3, the step of sequentially etching the plurality of hard mask layers and the target film to obtain a plurality of initial target patterns with the N metal hard mask strips as masks includes: the etching selectivity ratio of any one of the plurality of hard mask layers to the metal hard mask strip is greater than or equal to 5:1.

[0024] The graphic substrate of the present invention is prepared by the graphic manufacturing method. The beneficial effects are as follows: Since in the step S1 of the graphic manufacturing method, the photoresist film is patterned to expose a part of the top surface of the metal film to obtain the metal exposed top surface, and in the step S2, the ion bombardment process is used to process the metal exposed top surface to form N metal hard mask strips in the photoresist film, so that through the steps S3 and S4, after removing the photoresist film, the plurality of hard mask layers and the target film can be sequentially etched with the N metal hard mask strips as masks, and a part of each initial target pattern is removed with the top surface of the target film as the stop position, thereby obtaining a plurality of target patterns provided on the top surface of the substrate. The process is simple and easy to control, solving the problems of high cost, low production efficiency, and complex manufacturing process for producing small-size patterns. Description of the Drawings

[0025] Figure 1 is a flowchart of the graphic manufacturing method according to an embodiment of the present invention;

[0026] Figure 2 is a schematic diagram of a working state of using the ion bombardment process to process the metal exposed top surface according to an embodiment of the present invention;

[0027] Figure 3 is a schematic diagram of the structure obtained after completing the step S2 according to an embodiment of the present invention;

[0028] Figure 4 is in Figure 3 is a schematic diagram of the structure obtained after removing the photoresist film and etching the hard mask with the metal hard mask strip as a mask on the basis of the shown structure;

[0029] Figure 5 After etching the target thin film on the formed structural basis, a schematic diagram of the structure obtained is shown; Figure 4 After etching the target thin film on the formed structural basis, a schematic diagram of the structure obtained is shown;

[0030] Figure 6 After removing Figure 5 the metal mask strips and hard mask pillars shown, a schematic diagram of the formed structure is shown;

[0031] Figure 7 Another working state schematic diagram of the embodiment of the present invention using an ion bombardment process to process the exposed top surface of the metal;

[0032] Figure 8 Another working state schematic diagram of the embodiment of the present invention using an ion bombardment process to process the exposed top surface of the metal. Detailed implementation manners

[0033] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meaning as understood by those of ordinary skill in the art in the field to which the present invention belongs. The words such as "including" used herein mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items.

[0034] The embodiment of the present invention provides a graphic manufacturing method and a graphic substrate obtained by the graphic manufacturing method to solve the problems of high cost, low production efficiency, and complex manufacturing process for producing small-size graphics.

[0035] To achieve the above objective, referring to Figure 1 , the graphic manufacturing method of the embodiment of the present invention includes the steps:

[0036] S1: Deposit a target thin film, a hard mask, a metal thin film covering the top surface of the hard mask, and a photoresist thin film on a substrate in sequence, and perform patterning on the photoresist thin film to expose a part of the top surface of the metal thin film to obtain an exposed top surface of the metal;

[0037] S2: Use an ion bombardment process to process the exposed top surface of the metal to form N metal hard mask strips in the photoresist thin film, where N is a positive integer greater than 0;

[0038] S3: After removing the photoresist film, using the N metal hard mask strips as masks, sequentially etching the hard mask and the target film to obtain a plurality of initial target patterns;

[0039] S4: Removing the remaining metal hard mask strips and the hard mask to obtain a plurality of target patterns disposed on the top surface of the substrate.

[0040] In the step S2, the process of forming the metal hard mask strips by the ion bombardment process is simple and easy to control. Combining with using the N metal hard mask strips as masks in the step S3 to sequentially etch the hard mask and the target film, the manufacturing difficulty of small-sized patterns is reduced and the production efficiency is improved.

[0041] Figure 2 FIG. is a schematic diagram of a working state of using the ion bombardment process to process the exposed top surface of the metal in an embodiment of the present invention. Figure 3 FIG. is a schematic diagram of the structure obtained after completing the step S2 in an embodiment of the present invention.

[0042] In the step S1 of some embodiments, referring to Figure 2 and Figure 3 , a target film 2, a hard mask 3 with a metal film 4 on the top, and a photoresist film 5 are sequentially deposited on the substrate 1, and the photoresist film 5 is patterned to expose a part of the top surface of the metal film 4.

[0043] In some embodiments, the thickness of the metal film 4 is controlled within an appropriate range. If the thickness of the metal film 4 is too large, the complexity of the subsequent removal process will increase; if the thickness is too small, it will be difficult to form metal hard mask strips with regular shapes subsequently, which is not conducive to forming initial target patterns through pattern transfer.

[0044] In some specific embodiments, the thickness of the metal film 4 is 100 Å - 1 μm.

[0045] In the step S1 of some embodiments, referring to Figure 2 and Figure 3 , the step of patterning the photoresist film 5 to expose a part of the top surface of the metal film 4 to obtain an exposed metal top surface includes: performing the patterning process on the photoresist film 5 starting from the top surface near the edge on one side of the photoresist film 5 to expose a part of the top surface of the metal film 4 near the edge to obtain a near-edge exposed metal top surface 41.

[0046] In the step S2 of some embodiments, the step of using the ion bombardment process to process the exposed metal top surface includes: controlling the ion beam to act on the exposed metal top surface at a predetermined incident angle, and the acting directions of the ion beams used are parallel to each other.

[0047] In the step S2 of some embodiments, the step of processing the exposed top surface of the metal by using an ion bombardment process includes the steps of: controlling an ion beam to act on the exposed top surface of the metal at N different predetermined incident angles respectively to form N metal hard mask strips, and the predetermined incident angle is an acute angle formed between the ion beam and the exposed top surface of the metal.

[0048] In some specific embodiments, the ion beam is controlled to act on the exposed top surface of the metal at a predetermined incident angle to form one metal hard mask strip in the photoresist film, thereby completing one ion bombardment process. The predetermined incident angle is an acute angle formed between the ion beam and the exposed top surface of the metal; after the one ion bombardment process is completed, the ion beam is controlled to complete different ion bombardment processes at different predetermined incident angles to form the remaining N - 1 metal hard mask strips.

[0049] Specifically, referring to Figure 2 and Figure 3 , at one end of the near-edge metal exposed top surface 41 close to the photoresist film 5, after ionizing the ions by using an ion bombardment process, screening and accelerating are performed to form a directional parallel ion beam 6. The parallel ion beam 6 is controlled to be inclined to the near-edge metal exposed top surface 41 and incident on the near-edge metal exposed top surface 41 at a predetermined incident angle, and the incident energy of the parallel ion beam 6 is controlled, so that after some metal components of the near-edge metal exposed top surface 41, such as metal ions, are sputtered or reflected away from the near-edge metal exposed top surface 41, they enter the photoresist film 5 along a certain path, and a first metal hard mask strip 71 is formed at the other end of the photoresist film 5.

[0050] In some specific embodiments, the incident energy of the parallel ion beam 6 is controlled to be unchanged, and the acute angle formed between the ion beam and the exposed top surface of the metal is increased, so that the predetermined incident angle is increased. After the metal ions sputtered or reflected from the near-edge metal exposed top surface 41 enter the photoresist film 5, they reach a position close to the first metal hard mask strip 71, and form Figure 3 the second metal hard mask strip 72 shown in. Among them, the vertical distance between the middle of the second metal hard mask strip 72 and the middle of the near-edge metal exposed top surface 41 is less than the vertical distance between the middle of the first metal hard mask strip 71 and the middle of the near-edge metal exposed top surface 41, that is, compared with the first metal hard mask strip 71, the second metal hard mask strip 72 is closer to the near-edge metal exposed top surface 41.

[0051] Furthermore, referring to Figure 2 and Figure 3, keep the incident energy of the parallel ion beam 6 unchanged, successively increase the acute angle between the ion beam and the top surface of the exposed metal, so that the predetermined incident angle increases successively to complete different ion bombardment processes. The vertical distance between the middle of the metal hard mask strip formed by each ion bombardment process and the middle of the near-edge metal exposed top surface 41 decreases successively, that is, the metal hard mask strip formed by each ion bombardment process is closer to the near-edge metal exposed top surface 41 than the metal hard mask strip formed by the previous ion bombardment process.

[0052] In some more specific embodiments, referring to Figure 3 , the metal hard mask strips formed by different ion bombardment processes are arranged along Figure 3 the A direction shown.

[0053] Figure 4 To be Figure 3 a schematic diagram of the structure obtained by removing the photoresist film on the basis of the structure shown and etching the hard mask with the metal hard mask strip as a mask.

[0054] In the step S3 of some embodiments, referring to Figure 2 and Figure 4 , after 9 metal hard mask strips including the first metal hard mask 71 and the second metal hard mask 72 are formed in the photoresist film 5, the photoresist film 5 is removed to expose the 9 metal hard mask strips; using the 9 metal hard mask strips as a mask, etching is performed along Figure 4 the B direction shown with the top surface of the target film 2 as the stop position, towards the hard mask 3, to form 9 hard mask columns 31 arranged opposite to the metal hard mask strips, thereby transferring the pattern of the 9 metal hard mask strips to the hard mask 3, and each metal hard mask and the hard mask column connected correspondingly along the B direction form a combined mask.

[0055] In the step S3 of the embodiment of the present invention, the number of metal hard mask strips including the first metal hard mask 71 and the second metal hard mask 72 formed in the photoresist film 5 can be flexibly adjusted according to actual needs.

[0056] In some embodiments, the number of metal hard mask strips including the first metal hard mask 71 and the second metal hard mask 72 formed in the photoresist film 5 is 3-5.

[0057] In some embodiments, the hard mask 3 includes a plurality of hard mask layers stacked on each other.

[0058] In some embodiments, after removing the photoresist:

[0059] First, anisotropic etching is used to remove the metal thin film 4 on the surface of the hard mask 3. During the etching process, a certain amount of metal components will be lost from 9 metal hard mask strips including the first metal hard mask 71 and the second metal hard mask 72. Then, the remaining part of the hard mask 3 is etched using the formed 9 metal hard mask strips as a mask to form 9 hard mask columns 31.

[0060] Figure 5 For etching the target thin film on the basis of the formed structure to obtain a schematic diagram of the structure. Figure 4 Schematic diagram of the structure obtained after etching the target thin film on the formed structure basis.

[0061] In the step S3 of some embodiments, referring to Figure 2 、 Figure 4 and Figure 5 and taking the combined mask formed by each metal hard mask shown in Figure 4 and the hard mask column connected correspondingly along the B direction as a mask, continue to etch along the B direction with the top surface of the substrate 1 as the etching stop position to form 9 dielectric columns 21 disposed opposite to the combined mask, thereby further transferring the pattern of the 9 metal hard mask strips to the target thin film 2. A metal mask strip, a hard mask column, and a dielectric column connected in sequence along the B direction constitute an initial target pattern.

[0062] Figure 6 For removing Figure 5 Schematic diagram of the structure formed after removing the metal mask strip and the hard mask column shown in

[0063] In the step S4 of some embodiments, referring to Figure 4 、 Figure 5 and Figure 6 first, wet etching is used to remove 9 metal hard mask strips including the first metal hard mask strip 71 and the second metal hard mask strip 72, and then wet etching is used to remove 9 hard mask columns 31 to expose the top surfaces of the 9 dielectric columns 21, obtaining 9 target patterns 61 disposed on the surface of the substrate 1.

[0064] In the step S3 of some embodiments, the step of sequentially etching the second hard mask and the target thin film using the N metal hard mask strips as a mask to obtain a plurality of initial target patterns includes: controlling the etching selectivity ratio of the second hard mask to the metal hard mask strip to be greater than or equal to 5:1.

[0065] In some specific embodiments, the target thin film 2 is composed of any one of single-crystalline semiconductor materials, polycrystalline semiconductor materials, amorphous semiconductor materials, and metals. The second hard mask is a dielectric thin film composed of any one of silicon dioxide, silicon nitride, and silicon oxynitride. The metal thin film 4 is composed of non-volatile metals, such as any one of tantalum and tungsten. Using non-volatile metals as the constituent materials of the metal thin film 4 ensures that during the formation of the metal hard mask strip, the metal thin film 4 and other parts of the underlying hard mask 3 will not be damaged, ensuring relatively high stability in pattern manufacturing and improving the manufacturing quality and precision of small patterns.

[0066] In some specific embodiments, the target thin film 2 is composed of a dielectric thin film, such as any one of silicon dioxide, silicon nitride, and silicon oxynitride, and the second hard mask is composed of a semiconductor material.

[0067] Figure 7 This is another schematic diagram of the working state of the embodiment of the present invention using the ion bombardment process to process the exposed top surface of the metal. Figure 8 This is yet another schematic diagram of the working state of the embodiment of the present invention using the ion bombardment process to process the exposed top surface of the metal.

[0068] In the step S1 of some embodiments, the step of patterning the photoresist thin film 5 to expose a part of the top surface of the metal thin film 4 to obtain an exposed top surface of the metal includes:

[0069] Referring to Figure 2 、 Figure 7 and Figure 8 , starting from the middle top surface of the photoresist thin film 5, the photoresist thin film 5 is patterned to expose the middle top surface of the metal thin film 4 to obtain a middle exposed top surface of the metal 42. Further, through the patterning of the photoresist thin film 5, the photoresist thin film 5 forms a first photoresist thin film 51 and a second photoresist thin film 52 on both sides of the middle exposed top surface of the metal 42.

[0070] Further, the step of controlling the ion beam to act on the exposed top surface of the metal at N different predetermined incident angles to form N metal hard mask strips includes: controlling the ion beam to act on the middle exposed top surface of the metal 42 within a first orientation range and performing the ion bombardment process M times to sequentially form M metal hard mask strips with sequentially decreasing distances from the exposed top surface of the metal within the first photoresist thin film 51, where M is a positive integer greater than 0 and less than N.

[0071] Then, control the ion beam to act on the exposed top surface of the middle metal in a second orientation range, and perform the ion bombardment process N - M times to sequentially form N - M metal hard mask strips in the second photoresist film with sequentially decreasing distances from the exposed top surface of the metal.

[0072] Specifically, referring to Figure 7 , in the step S221, control the ion beam (not labeled in the figure) to act on the exposed top surface 42 of the middle metal in the Figure 7 shown C direction. First, form the first metal hard mask strip 71 in the first photoresist film 51 at a position far from the exposed top surface 42 of the middle metal and close to the edge of the first photoresist film 51. Then, sequentially increase the acute angle between the ion beam (not labeled in the figure) and the exposed top surface 42 of the middle metal, and keep the energy of the ion beam (not labeled in the figure) unchanged, so that along the Figure 7 shown A direction, sequentially form 4 more metal hard mask strips, and finally obtain 5 metal hard mask strips located on the right side of the exposed top surface 42 of the middle metal as shown in Figure 7 .

[0073] Furthermore, referring to Figure 8 , keep the energy of the ion beam (not labeled in the figure) unchanged, change its acting direction, that is, act on the exposed top surface 42 of the middle metal in the D direction. First, form the third metal hard mask strip 73 in the second photoresist film 52 at a position far from the exposed top surface 42 of the middle metal and close to the edge of the first photoresist film 51. Then, sequentially increase the acute angle between the ion beam (not labeled in the figure) and the exposed top surface 42 of the middle metal, and keep the energy of the ion beam (not labeled in the figure) unchanged, so that along the Figure 8 opposite direction of A shown, sequentially form 4 more metal hard mask strips, and finally obtain 5 metal hard mask strips on the left side of the exposed top surface 42 of the middle metal as shown in Figure 8 .

[0074] In some embodiments, the step of controlling the ion beam to act on the exposed top surface of the metal at N different predetermined incident angles to form N metal hard mask strips includes: controlling the ion beam to act on the exposed top surface of the middle metal in different incident directions around a virtual axis and performing the ion bombardment process M times to sequentially form M metal hard mask strips distributed around the virtual axis in the photoresist film, where M is a positive integer greater than 0 and less than or equal to N.

[0075] Specifically, first, keep the energy of the ion beam (not labeled in the figure) and the acute angle between the ion beam (not labeled in the figure) and the exposed top surface 42 of the middle metal unchanged, and sequentially change the incident direction of the ion beam in different orientations, so as to form a first circle of several metal hard mask strips arranged around the exposed top surface 42 of the middle metal in the photoresist film 5; then, after increasing the acute angle between the ion beam (not labeled in the figure) and the exposed top surface 42 of the middle metal, keep the energy of the ion beam (not labeled in the figure) and the adjusted acute angle between the ion beam (not labeled in the figure) and the exposed top surface 42 of the middle metal unchanged, and sequentially change the incident direction of the ion beam in different directions, so as to further form a second circle of several metal hard mask strips arranged around the exposed top surface 42 of the middle metal in the photoresist film 5 between the first circle of several metal hard mask strips and the exposed top surface 42 of the middle metal.

[0076] From the above discussion, it can be seen that in the embodiment of the present invention, by flexibly controlling the energy, angle and direction of ion bombardment, the formation area of the metal hard mask can be controlled according to the distribution requirements of the target pattern, with high controllability, improving the production efficiency, providing a better small-size mask for the subsequent manufacture of small-size patterns, and further improving the manufacturing accuracy of small-size patterns.

[0077] It should be added that the composition of the graphic substrate in the embodiment of the present invention is not limited to being composed of the aforementioned substrate 1, the target film 2 and the hard mask 3, but any one structure or a combination of multiple structures such as a buffer layer, a sacrificial layer, an etching layer, and a mask can be added between the substrate 1 and the hard mask 3 according to the actual production requirements of semiconductor patterns, making the graphic substrate of the present invention more applicable and capable of manufacturing more types of semiconductor patterns.

[0078] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present invention described in the claims. Moreover, the present invention described herein can have other embodiments and can be implemented or realized in various ways.

Claims

1. A method for manufacturing a graphic, characterized in that, Including the steps of: S1: Sequentially deposit a target thin film, a hard mask, a metal thin film covering the top surface of the hard mask, and a photoresist thin film on a substrate, perform patterning on the photoresist thin film to expose a partial top surface of the metal thin film to obtain a metal-exposed top surface; S2: Process the metal-exposed top surface by using an ion bombardment process to form N metal hard mask strips in the photoresist thin film, where N is a positive integer greater than 0; Among them, it includes: controlling the ion beam to act on the metal-exposed top surface at N different predetermined incident angles respectively to form the N metal hard mask strips, and the predetermined incident angle is the acute angle between the ion beam and the metal-exposed top surface; S3: After removing the photoresist thin film, use the N metal hard mask strips as masks to sequentially etch the hard mask and the target thin film to obtain a number of initial target patterns; S4: Remove the remaining metal hard mask strips and the hard mask to obtain a number of target patterns disposed on the top surface of the substrate.

2. The method for manufacturing a graphic according to claim 1, characterized in that, The step of controlling the ion beam to act on the metal-exposed top surface at N different predetermined incident angles respectively to form the N metal hard mask strips includes: Controlling the ion beam to complete different ion bombardment processes at different predetermined incident angles that increase sequentially to form the N metal hard mask strips.

3. The method for manufacturing a graph according to claim 1, characterized in that, The step of controlling the ion beam to act on the metal-exposed top surface at N different predetermined incident angles respectively to form the N metal hard mask strips includes: Controlling the ion beam to complete different ion bombardment processes at different predetermined incident angles and different intensities to form the N metal hard mask strips.

4. The method for manufacturing a graph according to claim 1, wherein The directions of the ion beam acting on the metal-exposed top surface at the predetermined incident angle are parallel to each other.

5. The method for manufacturing a graphic according to claim 1, wherein In the step S1, the step of performing patterning on the photoresist thin film to expose a partial top surface of the metal thin film to obtain a metal-exposed top surface includes: Performing the patterning on the photoresist thin film starting from the top surface near the edge on one side of the photoresist thin film to expose a partial top surface near the edge of the metal thin film to obtain a near-edge metal-exposed top surface.

6. The method for manufacturing a graph according to claim 1, wherein In the step S1, the step of performing patterning on the photoresist thin film to expose a partial top surface of the metal thin film to obtain a metal-exposed top surface includes: Performing the patterning on the middle part of the photoresist thin film to expose the middle top surface of the metal thin film to obtain a middle metal-exposed top surface.

7. The method for manufacturing a graphic according to claim 6, wherein The photoresist thin film includes a first photoresist thin film and a second photoresist thin film on both sides of the middle metal-exposed top surface. The step of controlling the ion beam to act on the metal-exposed top surface at N different predetermined incident angles respectively to form the N metal hard mask strips includes: Controlling the ion beam to act on the middle metal-exposed top surface within a first orientation range and performing M ion bombardment processes to sequentially form M metal hard mask strips in the first photoresist thin film with the distances from the metal-exposed top surface decreasing sequentially, where M is a positive integer greater than 0 and less than N; Then, control the ion beam to act on the exposed top surface of the middle metal in a second orientation range, and perform the ion bombardment process N - M times to sequentially form N - M metal hard mask strips with gradually decreasing distances from the exposed top surface of the metal in the second photoresist film.

8. The method for manufacturing a graph according to claim 6, characterized in that, The step of controlling the ion beam to act on the exposed top surface of the metal at N different predetermined incident angles to form N metal hard mask strips includes: Controlling the ion beam to act on the exposed top surface of the middle metal in different incident directions around a virtual axis perpendicular to the substrate and performing the ion bombardment process M times to sequentially form M metal hard mask strips distributed around the virtual axis in the photoresist film, where M is a positive integer greater than 0 and less than or equal to N.

9. The graphic manufacturing method according to claim 1, wherein In the step S1, the hard mask includes a plurality of hard mask layers stacked on each other.

10. The method for manufacturing a pattern according to claim 9, wherein In the step S3, the step of sequentially etching the plurality of hard mask layers and the target film with the N metal hard mask strips as masks to obtain a plurality of initial target patterns includes: The etching selectivity ratio of any one of the plurality of hard mask layers to the metal hard mask strip is greater than or equal to 5:

1.

11. A graphic substrate, characterized in that, Prepared by the pattern manufacturing method according to any one of claims 1 - 10.

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