Substrate processing device

Abstract

An apparatus is provided for processing a substrate using a processing fluid in a supercritical state. In a pressurization step of increasing the pressure in the processing space from a pressure below a critical pressure of the processing fluid to a processing pressure above the critical pressure, the apparatus controls the supply amount of the processing fluid supplied from a first supply port to control the flow of the processing fluid supplied from the first supply port and then discharged through a discharge port.

Description

Background Technology

[0001] The embodiments of the inventive concept described herein relate to a substrate processing apparatus.

[0002] As the design specifications of integrated circuit components shrink, the critical dimensions of semiconductor components have decreased to approximately 20 to 30 nanometers or smaller. Therefore, there is a need for processes to form deep and narrow patterns with relatively large aspect ratios of approximately 5 or greater, along with accompanying cleaning and drying processes. In performing predetermined processes, including etching, cleaning, and drying, on substrates in which structures with large aspect ratios are formed, methods using supercritical fluids have been proposed.

[0003] When the processing fluid is injected into the processing space within the chamber where supercritical processing is performed, the flow of the processing fluid on the substrate contained in the chamber is uneven, and eddies are generated in some areas until the pressure within the processing space reaches a processing pressure equal to or higher than the critical pressure of the processing fluid. Summary of the Invention

[0004] An embodiment of the present invention provides a substrate processing apparatus that can effectively process substrates.

[0005] An embodiment of the present invention provides a substrate processing apparatus that can control the flow of the processing fluid before it enters a supercritical state.

[0006] An embodiment of the present invention provides a substrate processing apparatus that can control the flow of the processing fluid before it enters a supercritical state, thereby reducing the initial concentration of the chemical liquid and the residual moisture concentration in the chamber where the supercritical process is performed.

[0007] An embodiment of the present invention provides a substrate processing apparatus that can control the concentration of chemical liquid and the concentration of residual moisture inside the chamber, thereby increasing the displacement force of fine patterns and preventing drying failure.

[0008] The objectives of the invention are not limited to those described above. Other objectives and advantages not mentioned in the invention can be understood based on the following description and can be more clearly understood based on embodiments of the invention. Furthermore, it will be readily understood that the objectives and advantages of the invention can be achieved using the means shown in the claims and combinations thereof.

[0009] On one hand, an apparatus is provided for processing a substrate using a processing fluid in a supercritical state. The apparatus includes: a chamber for providing a processing space for processing the substrate; a substrate support disposed within the chamber for supporting the substrate when it can be loaded into the chamber; a first supply port disposed in the lower wall of the chamber, wherein the first supply port can be connected to a first supply line for supplying the processing fluid to a portion of the processing space located below the substrate; a discharge port disposed in the lower wall of the chamber and spaced apart from the first supply port by a predetermined distance, wherein the discharge port can be connected to a discharge line for discharging the processing fluid from the chamber; a branch line branching from the discharge line and located on the discharge line upstream of a discharge valve mounted on the discharge line, wherein the branch line can be continuously open; and a controller for controlling the supply and discharge of the processing fluid, wherein in a pressurization step of increasing the pressure in the processing space from a pressure below a critical pressure of the processing fluid to a processing pressure above a critical pressure, the controller controls the supply amount of the processing fluid supplied from the first supply port to control the flow of the processing fluid supplied from the first supply port and then discharged through the discharge port.

[0010] In one embodiment, the device may further include an orifice installed in a branch line.

[0011] In one embodiment, the diameter of the orifice may be smaller than the diameter of the discharge pipeline.

[0012] In one embodiment, the branch line may be a bypass line installed parallel to the discharge valve.

[0013] In one embodiment, the controller can control the supply of the processing fluid in order to maintain the pressure in the processing space for a portion of the entire time of the pressurization step.

[0014] In one embodiment, during the pressurization step, within a predetermined time period before the pressure in the processing space reaches the critical pressure of the processing fluid, the controller can control the supply flow rate of the processing fluid to a first flow rate to control the flow of the processing fluid in the processing space, and control the supply flow rate of the processing fluid to a second flow rate greater than the first flow rate to increase the pressure in the processing space to the processing pressure.

[0015] In one embodiment, the apparatus may further include a second supply port connected to a second supply line for supplying processing fluid to a portion of the processing space located above the substrate, wherein the controller may: supply processing fluid from the first supply port during a period prior to the pressure in the processing space reaching a critical pressure of the processing fluid in a pressurization step; supply processing fluid in a supercritical state from the second supply port during a period after the pressure in the processing space has reached the critical pressure of the processing fluid; and open a drain valve to drain the processing fluid from the processing space after the processing of the substrate using the supercritical processing fluid has been completed.

[0016] In one embodiment, the apparatus may further include a baffle plate disposed between the first supply port and the substrate support to prevent processing fluid from the first supply port from being directly sprayed onto the substrate, wherein the top surface of the baffle plate may be positioned adjacent to the bottom surface of the substrate.

[0017] In one embodiment, the controller can control the supply flow rate of the processing fluid for the first period of the pressurization step and the supply flow rate of the processing fluid for the second period after the first period of the pressurization step to be different from each other.

[0018] In one embodiment, the controller can control the supply flow rate of the processing fluid for a first time period to a first flow rate, and control the supply flow rate of the processing fluid for a second time period to a second flow rate, wherein the second flow rate is greater than the first flow rate.

[0019] On the other hand, an apparatus is provided for processing a substrate using a processing fluid in a supercritical state. The apparatus includes: a chamber for providing a processing space for processing the substrate; a substrate support disposed within the chamber for supporting the substrate when it can be loaded into the chamber; a first supply port disposed in the lower wall of the chamber, wherein the first supply port can be connected to a first supply line for supplying the processing fluid to a portion of the processing space located below the substrate; a first discharge port disposed in the lower wall of the chamber and spaced apart from the first supply port by a predetermined distance, wherein the first discharge port can be connected to a first discharge line for discharging the processing fluid from the chamber; a second discharge port connected to a second discharge line for discharging the processing fluid from the chamber, wherein the second discharge port can be continuously open; and a controller for controlling the supply and discharge of the processing fluid, wherein in a pressurization step of increasing the pressure in the processing space from a pressure below a critical pressure of the processing fluid to a processing pressure above a critical pressure, the controller can control the supply amount of the processing fluid supplied from the first supply port to control the flow of the processing fluid supplied from the first supply port and then discharged through the second discharge port.

[0020] In one embodiment, the device may further include an orifice installed in the second discharge port.

[0021] In one embodiment, the diameter of the orifice may be smaller than the diameter of the first discharge pipeline.

[0022] In one embodiment, the controller can control the supply of the processing fluid in order to maintain the pressure in the processing space for a portion of the entire time of the pressurization step.

[0023] In one embodiment, during the pressurization step, within a predetermined time period before the pressure in the processing space reaches the critical pressure of the processing fluid, the controller can control the supply flow rate of the processing fluid to a first flow rate to control the flow of the processing fluid in the processing space, and control the supply flow rate of the processing fluid to a second flow rate greater than the first flow rate to increase the pressure in the processing space to the processing pressure.

[0024] In one embodiment, the apparatus may further include a second supply port connected to a second supply line for supplying processing fluid to a portion of the processing space located above the substrate, wherein the controller may: supply processing fluid from the first supply port during a period prior to the pressure in the processing space reaching a critical pressure of the processing fluid in a pressurization step; supply processing fluid in a supercritical state from the second supply port during a period after the pressure in the processing space has reached the critical pressure of the processing fluid; and open a first discharge valve to discharge the processing fluid in the processing space after the processing of the substrate using the supercritical processing fluid has been completed.

[0025] In one embodiment, the first discharge port may be located at the center of the lower wall of the chamber, the first supply port may be located at a position spaced apart from the first discharge port in one direction, and the second discharge port may be located at a position spaced apart from the first discharge port in the opposite direction to the first discharge port, and may be located around the first discharge port opposite to the first supply port.

[0026] In one embodiment, the controller can control the supply flow rate of the processing fluid for the first period of the pressurization step and the supply flow rate of the processing fluid for the second period after the first period of the pressurization step to be different from each other.

[0027] In one embodiment, the controller can control the supply flow rate of the processing fluid for a first time period to a first flow rate, and control the supply flow rate of the processing fluid for a second time period to a second flow rate, wherein the second flow rate is greater than the first flow rate.

[0028] In another aspect, an apparatus is provided for processing a substrate using a processing fluid in a supercritical state. The apparatus includes: a chamber for providing a processing space for processing a substrate; a substrate support disposed within the chamber for supporting the substrate when it can be loaded into the chamber; a first supply port connected to a first supply line for supplying processing fluid to a portion of the processing space located below the substrate; a second supply port connected to a second supply line for supplying processing fluid to a portion of the processing space located above the substrate; a discharge port connected to a discharge line for discharging processing fluid from the chamber; a branch line branching from the discharge line and located on the discharge line upstream of a discharge valve mounted on the discharge line, wherein the branch line can be continuously opened, wherein an orifice can be installed in the branch line, wherein the diameter of the orifice can be smaller than the diameter of the discharge line; a baffle plate disposed between the first supply port and the substrate support for preventing processing fluid from the first supply port from being directly sprayed onto the substrate; and a controller configured to control the supply and discharge of the processing fluid, wherein a pressurization step of increasing the pressure in the processing space from a pressure below a critical pressure of the processing fluid to a processing pressure above a critical pressure. In this process, the controller can control the supply amount of processing fluid supplied from the first supply port to control the flow of processing fluid supplied from the first supply port and then discharged through the second discharge port. The controller can control the supply flow rate of the processing fluid during a first period of the pressurization step and the supply flow rate of the processing fluid during a second period following the first period of the pressurization step to be different from each other. Specifically, the controller can control the supply flow rate of the processing fluid during the first period to a first flow rate and the supply flow rate of the processing fluid during the second period to a second flow rate, where the second flow rate is greater than the first flow rate. The first period can be the period before the pressure inside the processing space reaches the critical pressure of the processing fluid. The controller can supply processing fluid from the first supply port during the pressurization step, before the pressure in the processing space reaches the critical pressure of the processing fluid; supply processing fluid in a supercritical state from the second supply port during the period after the pressure in the processing space has reached the critical pressure of the processing fluid; and after the processing of the substrate using the supercritical processing fluid is completed, open the discharge valve to discharge the processing fluid from the processing space. Attached Figure Description

[0029] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, the same reference numerals in the various drawings refer to the same parts, and wherein:

[0030] Figure 1 This is a schematic view illustrating a substrate processing apparatus according to an embodiment of the concept of the present invention;

[0031] Figures 2 to 5 The sequence illustrates the state of the substrate processing apparatus controlled according to the order in which processing is performed using a substrate processing apparatus according to an embodiment of the present invention.

[0032] Figure 6 This illustration shows a time-sequential processing of pressure changes within a space, according to an embodiment of the concept of the present invention.

[0033] Figure 7 This is a schematic view illustrating a substrate processing apparatus according to another embodiment of the concept of the present invention. Detailed Implementation

[0034] In the following description, embodiments of the inventive concept will be described in more detail with reference to the accompanying drawings. Embodiments of the inventive concept can be modified in various forms. Therefore, the scope of the inventive concept should not be construed as limited to the following embodiments. These embodiments are provided to provide a more complete description of the inventive concept to those skilled in the art. Accordingly, the shapes of the elements in the drawings are enlarged to emphasize their clearer description.

[0035] Figure 1 This is a schematic view of a substrate processing apparatus 10 according to an embodiment of the present invention.

[0036] refer to Figure 1 The substrate processing apparatus 10 may include: a substrate processing unit 100 for supporting a substrate such as a wafer W and for processing the substrate via a supercritical process using a supercritical fluid; a supercritical fluid generator 200 for generating a supercritical fluid; a fluid supply source 300 for supplying the supercritical fluid from the supercritical fluid generator 200 to the processing chamber 100; and a fluid discharger 400 for discharging the supercritical fluid from the processing chamber 100.

[0037] Supercritical processes can include cleaning, drying, and etching processes using supercritical fluids. Supercritical fluids are substances whose temperature and pressure are above their critical point, and which exhibit gas-like diffusivity, viscosity, and surface tension, and liquid-like solubility. Examples of supercritical fluids include carbon dioxide (CO2), water (H2O), methane (CH4), ethane (C2H6), propane (C3H8), ethylene (C2H4), propylene (C2H2), methanol (C2H3OH), ethanol (C2H5OH), sulfur hexafluoride (SF6), acetone (C3H8O), and others.

[0038] In one embodiment, the substrate processing unit 100 may include chambers 110 and 120, a first substrate support 130, a first supply port 122, a second supply port 112, and a discharge port 124. The substrate processing unit 100 may use a supercritical processing fluid to dry the substrate W after the rinsing process. In one embodiment, the processing fluid may be carbon dioxide (CO2).

[0039] Chambers 110 and 120 may provide processing spaces 102 and 104 for drying the substrate. Processing spaces 102 and 104 may include a processing region 102 and a buffer region 104. The processing region 102 may be a region on the substrate W containing the chemical liquid S, and the buffer region 104 may be a region below the substrate W.

[0040] Chambers 110 and 120 may include an upper chamber 110 and a lower chamber 120. The upper chamber 110 may include an upper wall and a first side wall. The upper wall of the upper chamber 110 may be implemented as the upper wall of the chamber. The first side wall of the upper chamber 110 may be implemented as part of the side wall of the chamber. The lower chamber 120 may include a lower wall and a second side wall. The lower wall of the lower chamber 120 may be implemented as the lower wall of the chamber. The second side wall of the lower chamber 120 may be implemented as part of the side wall of the chamber.

[0041] The upper chamber 110 and the lower chamber 120 can move relative to each other under the operation of a drive mechanism (not shown), allowing them to engage or disengage, thus switching between a closed state and an open state. For example, at least one of the upper chamber 110 and the lower chamber 120 can move up and down along a lifting rod (not shown), allowing them to engage or disengage. In the open state of chambers 110 and 120, the substrate W can be loaded into / unloaded from the chamber. In the closed state of the chambers, a supercritical drying process for the substrate W can be performed.

[0042] The substrate support 130 can be disposed within chambers 110 and 120, and can support the substrate W when it is loaded into or unloaded from chambers 110 and 120. In the open state of chambers 110 and 120, the substrate support 130 can support the substrate W when it is loaded into or unloaded from chambers 110 and 120. Furthermore, the substrate support 130 can support the substrate W when it is being processed within chambers 110 and 120.

[0043] The substrate support 130 may include a first vertical rod extending downward from the upper wall of the upper chamber 110 and a first horizontal rod extending horizontally from one end of the first vertical rod. Furthermore, the substrate support 130 may include at least one first support protrusion (not shown) that protrudes from the first horizontal rod and supports the substrate W while contacting an edge region of the substrate W. The two substrate supports 130 are spaced apart from each other by a distance corresponding to the diameter of the substrate W. Therefore, each of the substrate supports 130 can support an edge region of the substrate W.

[0044] The substrate processing unit 100 may include a baffle plate 140 disposed between the lower wall of the lower chamber 120 and the substrate support 130. The baffle plate 140 may be mounted at a predetermined distance from the lower wall of the lower chamber 120. The baffle plate 140 may be fixed to the lower wall of the lower chamber 120 via a support rod. The baffle plate 140 may include a plate having a predetermined thickness, which occupies a predetermined space within the buffer region 104. The baffle plate 140 may prevent supercritical fluid from the first supply port 122 from being directly sprayed onto the rear surface of the substrate W.

[0045] Furthermore, the volume of the buffer region 104 can be reduced due to the baffle plate 140. The volume of the buffer region 104 can be smaller than the volume of the processing region 102. Therefore, the amount of processing fluid present in the buffer region 104 below the substrate W can be less than the amount of processing fluid present in the processing region 102 above the substrate W. The baffle plate 140 can be present in the buffer space below the substrate W to maintain processing performance while reducing the amount of processing fluid used during the drying process. Therefore, the baffle plate 140 can reduce the buffer space to reduce processing time.

[0046] In addition, a space can be maintained between the baffle plate 140 and the lower wall of the lower chamber 120, so that the direction of fluid flow in the high-pressure chamber can be adjusted.

[0047] The processing fluid is stored at high pressure in a supercritical fluid generator 200, and then introduced into the drying processing chamber via pipes L1, L11, and L12 and valves 310, 320a, 320b, 320c, 330, and 332 of the fluid supply source 300. During this journey, the processing fluid cools due to pressure drops at valves 310, 320a, 320b, 320c, 330, and 332, as well as at pipe connections. Therefore, the processing fluid is either liquefied or solidified, and thus retained on the substrate as particulate contaminants. Alternatively, other impurities may cause the processing fluid to solidify. For this purpose, it is important to maintain the processing fluid at a temperature above the critical point. At increased pressurization rates, simply maintaining the temperature of the pipes is insufficient to transfer enough heat to the gas or the supercritical solvent. Therefore, additional heat exchangers 350, 352 and 354 (or temperature regulating jackets) are used to minimize phase change and reduce density change due to temperature during the transfer of the processing fluid from the supercritical fluid generator 200 to the drying processing chamber 100, so as to facilitate time control of pressurization and depressurization.

[0048] The first supply port 122 can be installed in the lower chamber 120. The first supply port 122 can be located in the lower wall of the lower chamber 120. Processing fluid can be supplied through the first supply port 122 to the buffer area 104 located below the substrate W.

[0049] The second supply port 112 can be installed in the upper chamber 110. The second supply port 112 can be located in the central region of the upper wall of the upper chamber 110. Processing fluid can be supplied to the processing area 102 located above the substrate W through the second supply port 112.

[0050] Discharge port 124 may be installed in the lower chamber 120. Discharge port 124 may be located in the portion of the lower wall of the lower chamber 120 adjacent to the first supply port 122. Discharge port 124 may discharge the fluid used in the supercritical fluid process from the processing space of the chamber. The discharged processing fluid may contain dissolved chemical liquids. The processing fluid discharged from discharge port 124 may be discharged or supplied to a regeneration device (not shown), wherein the processing fluid may be separated into supercritical fluid and organic solvent.

[0051] The substrate processing unit 100 may include heaters disposed in at least one of the upper wall and side wall of the upper chamber 110 and the lower wall and side wall of the lower chamber 120. The heaters can heat the interior of the chambers such that the processing fluid supplied to the interior of the chambers is maintained at a temperature above a critical temperature. For example, the heaters may include a first heater 116 disposed in the upper chamber 110 and a second heater 126 disposed in the lower chamber 120.

[0052] Figures 2 to 5The sequence illustrates the state of the substrate processing apparatus controlled according to the order in which processing is performed using a substrate processing apparatus according to an embodiment of the present invention. Figure 6 This illustration shows a time-sequential processing of pressure changes within a space, according to an embodiment of the present invention. (Reference) Figures 5 to 6 The process of processing substrate W is described. The process of drying the substrate is illustrated with an example.

[0053] like Figure 2 As shown, in order to dry the substrate W, the substrate W is loaded into the chamber and placed on the substrate support 130.

[0054] Then, a drying process using a supercritical fluid is carried out in the chamber. Specifically, the remaining chemical liquid S from the process prior to drying (e.g., rinsing) is mixed (replaced) with the supercritical fluid. The mixed supercritical fluid can then be discharged. Thus, the chemical liquid S has been removed from the substrate. The chemical liquid S can be an organic solvent or an anti-leaning liquid. Alternatively, the chemical liquid S can be isopropanol (IPA).

[0055] The drying process may include: a pressurization step I, which increases the internal pressure of the processing space to a high pressure, causing the processing fluid to enter a supercritical state with high temperature and high pressure; a replacement step, namely a drying step II for removing the mixed liquid solvent; and a discharge step III, which reduces the pressure inside the processing space back to atmospheric pressure. Discharge step III may include a low-speed decompression step III-A and a high-speed decompression step III-B. The pressure in the processing space of the substrate processing unit 100 can be controlled and switched according to the pressurization step I, the replacement step II, and the discharge step III.

[0056] The fluid supply source 300 can supply processing fluid into the chamber to increase the pressure in the processing space within the chamber. The fluid discharger 400 can discharge the processing fluid from the chamber.

[0057] In pressurization step I, a controller (not shown) increases the pressure in the processing space from a pressure below the critical pressure of the processing fluid to a processing pressure above the critical pressure. The controller (not shown) controls the amount of processing fluid supplied from the first supply port 122 to control the flow rate of the processing fluid supplied from the first supply port 122 and discharged through the discharge port 124.

[0058] Discharge port 124 is connected to discharge line L2. Discharge valve 410 is installed at discharge line L2.

[0059] Branch line L3 branches off from discharge line L2 and is located upstream of discharge valve 410, and remains always open. An orifice 510 is installed at branch line L3. The diameter of orifice 510 is smaller than the diameter of discharge line L2. In the illustrated embodiment, branch line L3 is implemented as a bypass line installed parallel to discharge valve 410. However, according to another embodiment, the end of branch line L3 can be emptied separately from discharge line L2.

[0060] When the processing fluid is supplied at a first flow rate through the first supply port 122 in pressurization step I, the processing fluid flows along the first supply port 122, then flows to the top surface of the substrate W, and then flows to the discharge port 124. In this regard, the discharge valve 410 is closed, so that the processing fluid through the discharge port 124 is emptied through the branch line L3. The first flow rate is set so that the processing fluid generates laminar flow on the top surface of the substrate W. Specifically, in pressurization step I, the supply flow rate of the processing fluid is controlled to the first flow rate during the period before the pressure in the processing space reaches the critical pressure Pcr, thereby controlling the flow of the processing fluid in the processing space. The supply of the processing fluid at the first flow rate can be achieved by selecting and controlling one of the first regulating lines 302a, 302b, and 302c, in which the fluid supply source 300 is respectively installed, that is, by selecting and controlling one of the regulating lines, the regulation of the three steps is allowed. According to another embodiment, a flow rate control device (not shown) may be installed at the supply line L1 to control the flow rate.

[0061] In a state where the flow in the processing space is controlled, the concentration of the chemical liquid forming a liquid film on the substrate decreases, the concentration of water remaining in the chamber decreases, and the supply flow rate of the processing fluid increases. In one embodiment, the supply flow rate of the processing fluid is controlled to a second flow rate greater than a first flow rate to increase the pressure in the processing space to the processing pressure. The second flow rate is set to be higher than the first flow rate and is set to increase the pressure in the processing space. Considering the phase characteristics in the chamber, the pressurization rate can be changed to shorten the pressurization time.

[0062] According to an embodiment of the present invention, the predetermined processing fluid is continuously discharged through the discharge port 124. Therefore, in order to increase the pressure inside the processing space, the processing fluid should be supplied to the processing space at a second flow rate higher than the first flow rate.

[0063] According to one embodiment, the boosting step I includes a first boosting step IA in which a first boosting is performed, a flow control step IB, and a second boosting step IC in which a second boosting is performed.

[0064] refer to Figure 2 and Figure 6This describes a first pressurization step IA and a flow control step IB. In the first pressurization step IA, a processing fluid is supplied through a first supply port 122 at a first flow rate. The processing fluid may not reach its critical pressure, thus generating an airflow characteristic of a gas. When the processing fluid reaches a certain pressure level, it is discharged from the processing space through a discharge port 124 and a branch line L3 connected to the discharge port 124, and then the flow control step IB is executed. In the flow control step IB, laminar flow is generated on the top surface of the substrate W. Controlling the flow rate for a preset duration can reduce the concentration of the chemical liquid and reduce the concentration of residual moisture in the chamber. The flow control step IB is performed at a pressure below the critical pressure Pcr of the processing fluid. In the flow control step IB, the pressure in the processing space can be maintained at a constant pressure for a predetermined duration.

[0065] refer to Figure 3 and Figure 6 The second pressurization step IC is described. The flow control step IB is executed for a set duration, causing a decrease in the concentration of the chemical liquid and a decrease in the concentration of residual moisture in the chamber. Then, the supply flow rate of the process fluid is increased to a second flow rate. Multiple first regulating valves 320a, 320b, and 320c are controlled to increase the supply flow rate of the process fluid. As a result, when the process fluid is supplied at the second flow rate, which is the increased flow rate, the second pressurization step IC, in which a second pressure increase occurs, is executed.

[0066] refer to Figure 4 and Figure 6 The method for supplying processing fluid when the current pressure of the processing fluid exceeds the critical pressure Pcr of the processing fluid in the second pressurization step IC will be described. When the current pressure of the processing fluid exceeds the critical pressure Pcr of the processing fluid, processing fluid is supplied through the second supply port 112 in addition to the first supply port 122.

[0067] When the pressure inside the processing space reaches the processing pressure, replacement step II is executed. In replacement step II, a flushing process can be performed, wherein depressurization and pressurization processes within the range between the first pressure P1 and the second pressure P2 are performed alternately and repeatedly. The process of supplying a predetermined amount of processing fluid into the chamber through the second supply line L11 and the second supply port 112 and the process of discharging the gas present in the processing space 102 through the discharge port 124 during the above processes can be performed alternately and repeatedly.

[0068] refer to Figure 5 and Figure 6This describes discharge step III, which involves draining the processing space after replacement step II is completed. When processing is complete, discharge valve 410 opens to drain and empty the processing fluid from the processing space. In discharge step III, the discharge rate of the processing fluid, i.e., the depressurization rate, can be adjusted so that the temperature in the chamber is maintained above the critical temperature of the processing fluid, preventing supercritical processing fluid from entering the liquid state. Therefore, processing time can be reduced.

[0069] Figure 7 This is a schematic view illustrating a substrate processing apparatus according to another embodiment of the concept of the present invention. Reference Figure 7 In another embodiment of the present invention, the second discharge port 125 may be located in the lower chamber 120. The second discharge port 125 is connected to the second discharge line L4. Figure 1 In one embodiment, the second discharge port 125 and the second discharge line L4 may correspond to the branch line L3. The discharge port 125 and the second discharge line L4 are always open. An orifice 510 is installed at the second discharge line L4 to set the discharge flow rate.

[0070] according to Figure 7 In one embodiment, a first discharge port 124 is located at the center of the lower wall of the lower chamber 120. A first supply port 122 is located in one direction at a position spaced apart from the first discharge port 124. A second discharge port 125 is located in the opposite direction at a position spaced apart from the first discharge port 124, and is opposite to the first supply port 122 around the first discharge port 124. Figure 7 In one embodiment, the first supply port 122 and the second discharge port 125 are arranged symmetrically around the first discharge port 124, so that the fluid flow can be controlled more smoothly.

[0071] According to various embodiments of the present invention, the substrate processing apparatus can effectively process substrates.

[0072] According to various embodiments of the present invention, the substrate processing apparatus can control the flow of the processing fluid before the processing fluid enters a supercritical state.

[0073] According to various embodiments of the present invention, the substrate processing apparatus can control the flow of the processing fluid before it enters a supercritical state, thereby reducing the initial concentration of the chemical liquid and the residual moisture concentration in the chamber where the supercritical process is performed.

[0074] According to various embodiments of the present invention, the substrate processing apparatus can control the concentration of the chemical liquid and the concentration of residual moisture inside the chamber, thereby increasing the displacement force of fine patterns and preventing drying failure.

[0075] The effects of this invention are not limited to those described above, and those skilled in the art will clearly understand from the above description other effects not mentioned.

[0076] Although the inventive concept has been described with reference to embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are illustrative rather than restrictive.

Claims

1. An apparatus for processing a substrate using a processing fluid in a supercritical state, the apparatus comprising: A chamber for providing processing space for processing the substrate; A substrate support member is disposed within the cavity to support the substrate when the substrate is loaded into the cavity; A first supply port is disposed in the lower wall of the chamber, wherein the first supply port is connected to a first supply line for supplying processing fluid to a portion of the processing space located below the substrate; A discharge port is disposed in the lower wall of the chamber and spaced apart from the first supply port by a predetermined distance, wherein the discharge port is connected to a discharge line for discharging the processed fluid from the chamber; A branch line, which branches off from the discharge line and is located upstream of the discharge valve installed on the discharge line, wherein the branch line is always open; and A controller configured to control the supply and discharge of the processed fluid. In the pressurization step of increasing the pressure in the processing space from a pressure below the critical pressure of the processing fluid to a processing pressure above the critical pressure, the controller is configured to control the supply amount of the processing fluid supplied from the first supply port to control the flow of the processing fluid supplied from the first supply port and then discharged through the discharge port and through the branch pipeline.

2. The apparatus according to claim 1, wherein, The device also includes an orifice installed in the branch pipeline.

3. The apparatus according to claim 2, wherein, The diameter of the orifice is smaller than the diameter of the discharge pipeline.

4. The apparatus according to claim 1, wherein, The branch line is a bypass line installed parallel to the discharge valve.

5. The apparatus according to claim 1, wherein, The controller is configured to control the supply of the processing fluid in order to maintain the pressure in the processing space for a portion of the entire time period of the pressurization step.

6. The apparatus according to claim 1, wherein, The controller is configured to: In the pressurization step, during a predetermined period before the pressure in the processing space reaches the critical pressure of the processing fluid, the supply flow rate of the processing fluid is controlled to a first flow rate, thereby controlling the flow of the processing fluid in the processing space. as well as The supply flow rate of the processing fluid is controlled to a second flow rate greater than the first flow rate, so as to increase the pressure in the processing space to the processing pressure.

7. The apparatus according to claim 1, wherein, The apparatus further includes a second supply port connected to a second supply line for supplying the processing fluid to a portion of the processing space located above the substrate. The controller is configured to: During the pressurization step, the processing fluid is supplied from the first supply port during the period before the pressure in the processing space reaches the critical pressure of the processing fluid. During the period after the pressure in the processing space reaches the critical pressure of the processing fluid, the processing fluid in the supercritical state is supplied from the second supply port. as well as After the processing of the substrate using the supercritical processing fluid has been completed, the discharge valve is opened to discharge the processing fluid from the processing space.

8. The apparatus according to claim 1, wherein, The device further includes a baffle plate disposed between the first supply port and the substrate support to prevent the processing fluid from the first supply port from being directly sprayed onto the substrate. The top surface of the barrier plate is positioned adjacent to the bottom surface of the substrate.

9. The apparatus according to claim 1, wherein, The controller is configured to control the supply flow rate of the processing fluid during the first period of the pressurization step and the supply flow rate of the processing fluid during the second period after the first period of the pressurization step to be different from each other.

10. The apparatus according to claim 9, wherein, The controller is configured to: The supply flow rate of the processing fluid for the first time period is controlled to a first flow rate; and The supply flow rate of the processing fluid for the second time period is controlled to a second flow rate greater than the first flow rate.

11. An apparatus for processing a substrate using a processing fluid in a supercritical state, the apparatus comprising: A chamber for providing processing space for processing the substrate; A substrate support member is disposed within the cavity to support the substrate when the substrate is loaded into the cavity; A first supply port is disposed in the lower wall of the chamber, wherein the first supply port is connected to a first supply line for supplying processing fluid to a portion of the processing space located below the substrate; A first discharge port is disposed in the lower wall of the chamber and spaced apart from the first supply port by a predetermined distance, wherein the first discharge port is connected to a first discharge line for discharging the processed fluid from the chamber; A second discharge port, connected to a second discharge line, for discharging the processed fluid from the chamber, wherein the second discharge port is always open; and A controller configured to control the supply and discharge of the processed fluid. In the pressurization step of increasing the pressure in the processing space from a pressure below the critical pressure of the processing fluid to a processing pressure above the critical pressure, the controller is configured to control the supply amount of the processing fluid supplied from the first supply port to control the flow of the processing fluid supplied from the first supply port and then discharged through the second discharge port and through the second discharge line.

12. The apparatus according to claim 11, wherein, The device also includes an orifice installed in the second discharge port.

13. The apparatus according to claim 12, wherein, The diameter of the orifice is smaller than the diameter of the first discharge pipeline.

14. The apparatus according to claim 11, wherein, The controller is configured to control the supply of the processing fluid in order to maintain the pressure in the processing space for a portion of the entire time period of the pressurization step.

15. The apparatus according to claim 11, wherein, The controller is configured to: In the pressurization step, during a predetermined period before the pressure in the processing space reaches the critical pressure of the processing fluid, the supply flow rate of the processing fluid is controlled to a first flow rate, thereby controlling the flow of the processing fluid in the processing space. as well as The supply flow rate of the processing fluid is controlled to a second flow rate greater than the first flow rate, so as to increase the pressure in the processing space to the processing pressure.

16. The apparatus according to claim 11, wherein, The apparatus further includes a second supply port connected to a second supply line for supplying the processing fluid to a portion of the processing space located above the substrate. The controller is configured to: During the pressurization step, the processing fluid is supplied from the first supply port during the period before the pressure in the processing space reaches the critical pressure of the processing fluid. During the period after the pressure in the processing space reaches the critical pressure of the processing fluid, the processing fluid in the supercritical state is supplied from the second supply port. as well as After the processing of the substrate using the supercritical processing fluid has been completed, the first discharge valve is opened to discharge the processing fluid from the processing space.

17. The apparatus according to claim 11, wherein, The first discharge port is located at the center of the lower wall of the chamber. The first supply port is located at a position spaced apart from the first discharge port along one direction. The second discharge port is disposed at a position spaced apart from the first discharge port along a direction opposite to the first direction, and is opposite to the first supply port around the first discharge port.

18. The apparatus according to claim 11, wherein, The controller is configured to control the supply flow rate of the processing fluid during the first period of the pressurization step and the supply flow rate of the processing fluid during the second period after the first period of the pressurization step to be different from each other.

19. The apparatus according to claim 18, wherein, The controller is configured to: The supply flow rate of the processing fluid for the first time period is controlled to a first flow rate; and The supply flow rate of the processing fluid for the second time period is controlled to a second flow rate greater than the first flow rate.

20. An apparatus for processing a substrate using a processing fluid in a supercritical state, the apparatus comprising: A chamber for providing processing space for processing the substrate; A substrate support member is disposed within the cavity to support the substrate when the substrate is loaded into the cavity; A first supply port, which is connected to a first supply line, is used to supply processing fluid to the portion of the processing space located below the substrate; A second supply port, which is connected to a second supply line, is used to supply the processing fluid to the portion of the processing space located above the substrate; A discharge port, which is connected to a discharge line, for discharging the processing fluid from the chamber; A branch line, which branches off from the discharge line and is located upstream of the discharge valve installed on the discharge line, wherein the branch line is always open, wherein an orifice is installed in the branch line, wherein the diameter of the orifice is smaller than the diameter of the discharge line; A baffle plate, disposed between the first supply port and the substrate support, is provided to prevent the processing fluid from the first supply port from being directly sprayed onto the substrate; and A controller configured to control the supply and discharge of the processed fluid. In the pressurization step of increasing the pressure in the processing space from a pressure below the critical pressure of the processing fluid to a processing pressure above the critical pressure, the controller is configured to control the supply amount of the processing fluid supplied from the first supply port, so as to control the flow of the processing fluid supplied from the first supply port and then discharged through the discharge port and through the branch pipeline. The controller is configured to control the supply flow rate of the processing fluid during a first time period of the pressurization step and the supply flow rate of the processing fluid during a second time period after the first time period of the pressurization step to be different from each other. The controller is configured as follows: The supply flow rate of the processing fluid for the first time period is controlled to a first flow rate; and The supply flow rate of the processing fluid for the second time period is controlled to a second flow rate greater than the first flow rate. The first time period is the period before the pressure inside the processing space reaches the critical pressure of the processing fluid. The controller is configured as follows: During the pressurization step, the processing fluid is supplied from the first supply port during the period before the pressure in the processing space reaches the critical pressure of the processing fluid. During the period after the pressure in the processing space reaches the critical pressure of the processing fluid, the supercritical processing fluid is supplied from the second supply port; and After the processing of the substrate using the supercritical processing fluid has been completed, the discharge valve is opened to discharge the processing fluid from the processing space.

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