Fingerprint detection circuit, fingerprint recognition module and electronic device

Abstract

The present application discloses a fingerprint detection circuit, a fingerprint recognition module and an electronic device. The fingerprint detection circuit includes a sensing electrode, an amplifying transistor connected to the sensing electrode, and a feed-through capacitor. The sensing electrode is used to sense a finger to form a sensing capacitance. The sensing electrode and the feed-through capacitor are connected in parallel to the gate of the amplifying transistor. The feed-through capacitor receives an excitation signal and generates a sensing voltage signal with the sensing capacitance. The amplifying transistor generates a fingerprint voltage signal according to the sensing voltage signal. By using the feed-through capacitor to receive the excitation signal to generate a feed-through effect, the gate voltage of the amplifying transistor changes to form a sensing voltage signal, which can shorten the signal excitation time and accelerate the fingerprint unlocking speed. At the same time, the pulse signal frequency of the excitation signal can be relatively low, thereby reducing the AC coupling interference and reducing the interference source. The signal amplification function of the fingerprint detection signal can amplify the fingerprint signal, reduce the noise interference of the trace load capacitance on the signal, improve the signal quality, and increase the sensing area.

Description

Technical Field

[0001] The present application relates to the field of biometric identification technology, and in particular to a fingerprint detection circuit, a fingerprint sensor, and an electronic device. Background Art

[0002] In related technologies, with the increasing awareness of information security protection and the popularization of mobile devices, fingerprint unlocking technology has begun to develop rapidly and receive attention. Fingerprint patterns are an innate feature of the human body. They are composed of a series of ridges and valleys on the surface of the skin at the fingertips. Their uniqueness and convenience make the application of fingerprints more extensive. The principle of fingerprint recognition is generally to use optics, electricity, and acoustics to read the tiny signal differences between the valleys and ridges to form a fingerprint image, perform algorithm processing and image matching. Among them, for capacitive fingerprint modules, when the effective sensing area of the capacitive fingerprint increases, the load capacitance also increases, resulting in an increase in fingerprint image noise and a significant reduction in the signal-to-noise ratio, which limits the application scenarios of capacitive fingerprints. Summary of the Invention

[0003] Embodiments of the present application provide a fingerprint detection circuit, a fingerprint recognition module, and an electronic device.

[0004] The fingerprint detection circuit of the embodiment of the present application includes a sensing electrode and an amplifying transistor and a feed-through capacitor connected to the sensing electrode. The sensing electrode is used to sense a finger to form a sensing capacitor. The sensing electrode and the feed-through capacitor are connected in parallel to the gate of the amplifying transistor. The feed-through capacitor receives an excitation signal and generates a sensing voltage signal with the sensing capacitor. The amplifying transistor generates a fingerprint voltage signal based on the sensing voltage signal.

[0005] In some embodiments, the fingerprint detection circuit includes a switching transistor connected to the amplifying transistor, and the switching transistor receives a read signal to output the fingerprint voltage signal.

[0006] In some embodiments, the fingerprint detection circuit includes an operational amplifier connected to the switching transistor, and the operational amplifier is used to amplify the fingerprint voltage signal.

[0007] In some embodiments, the fingerprint detection circuit includes a reset module connected to the gate of the amplifying transistor.

[0008] In some embodiments, the reset module includes a reset transistor, which receives a reset control signal to write a reset voltage signal into a gate of the amplifying transistor.

[0009] In some embodiments, the excitation signal is a square wave signal.

[0010] The fingerprint recognition module according to the embodiment of the present application includes a plurality of detection pixel units arranged in an array, and the detection pixel unit includes the fingerprint detection circuit according to any of the above embodiments.

[0011] In some embodiments, the fingerprint recognition module includes an array substrate, and the fingerprint detection circuit is formed on the array substrate.

[0012] In some embodiments, the array substrate includes an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a first conductive layer, a planarization layer, and a second conductive layer sequentially disposed on a substrate.

[0013] The electronic device according to the embodiment of the present application includes the fingerprint recognition module according to any of the above embodiments.

[0014] In the fingerprint detection circuit, fingerprint recognition module, and electronic device according to the embodiments of the present application, a feedthrough capacitor is used to receive an excitation signal to generate a feedthrough effect, so that the gate voltage of the amplification transistor changes to form a sensing voltage signal. This can shorten the signal excitation time and accelerate the fingerprint unlocking speed. At the same time, the pulse signal frequency of the excitation signal can be relatively low, thereby reducing the AC coupling interference and the interference source. The signal amplification function of the fingerprint detection signal can amplify the fingerprint signal, reduce the noise interference of the trace load capacitance on the signal, improve the signal quality, and increase the sensing area.

[0015] The additional aspects and advantages of the present application will be partially given in the following description, partially become apparent from the following description, or be understood through the practice of the present application. Description of the Drawings

[0016] The above and / or additional aspects and advantages of the present application will become apparent and be readily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0017] Figure 1 is a plan view of the electronic device according to the embodiment of the present application.

[0018] Figure 2 is a structural schematic diagram of the fingerprint recognition module according to the embodiment of the present application. [[ID=3o]]

[0019] Figure 3 is a circuit schematic diagram of the fingerprint detection circuit according to the embodiment of the present application.

[0020] Figure 4 is a structural schematic diagram of the detection pixel unit according to the embodiment of the present application.

[0021] Figure 5 is a plan view of the electronic device according to another embodiment of the present application.

[0022] Figure 6It is a schematic diagram of the application scenario of the electronic device according to some embodiments of the present application.

[0023] Figure 7 It is a schematic diagram of the structure of the array substrate according to an embodiment of the present application.

[0024] Figure 8 It is a schematic diagram of the process flow of the array substrate according to an embodiment of the present application.

[0025] Main element symbol description:

[0026] Electronic device 1000, fingerprint recognition module 100, detection pixel unit 110, array substrate 120, substrate 121, active layer 122, gate insulating layer 123, gate layer 124, interlayer dielectric layer 125, first conductive layer 126, planarization layer 127, second conductive layer 128, fingerprint detection circuit 10, sensing electrode 11, amplifying transistor T1, feed-through capacitor Cst, switching transistor T2, operational amplifier AMP, reset module 12, reset transistor T3. Detailed implementation manners

[0027] The following describes in detail the embodiments of the present application. Examples of the embodiments are shown in the drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described below with reference to the drawings are exemplary only for explaining the present application and should not be construed as limiting the present application.

[0028] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless otherwise specifically defined.

[0029] The following disclosure provides many different embodiments or examples for implementing different structures of the present application. To simplify the disclosure of the present application, components and settings of specific examples are described below. Of course, they are only examples and are not intended to limit the present application. In addition, the present application may repeat reference numerals and / or reference letters in different examples. This repetition is for the purpose of simplification and clarity and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present application provides examples of various specific processes and materials, but those of ordinary skill in the art may be aware of the application of other processes and / or the use of other materials.

[0030] Please refer to Figure 1, the electronic device 1000 according to the embodiments of the present application includes a fingerprint recognition module 100, and the fingerprint recognition module 100 can be used to detect the fingerprint image of the user's finger, and realize fingerprint recognition through algorithm processing and image matching.

[0031] In the embodiments of the present application, the fingerprint recognition module 100 can be a capacitive fingerprint recognition module 100.

[0032] When the user's finger touches the surface of the capacitive fingerprint recognition module 100, the finger can be coupled with the electrodes of the capacitive fingerprint recognition module 100 to form an induced capacitance. Since the ridges in the fingerprint lines are convex and the valleys are concave, according to the relationship between the capacitance value and the distance, the capacitance values corresponding to the ridges and valleys of the capacitive fingerprint recognition module 100 are different. By converting the capacitance value into two-dimensional image data, a full or partial pattern of the fingerprint in contact with the fingerprint recognition module 100 is obtained, and the obtained fingerprint pattern is compared with the pattern previously stored in the fingerprint recognition module 100. If the two match, the identity information of the tested person passes the authentication. In this way, the electronic device 1000 can realize functions such as fingerprint unlocking.

[0033] In some embodiments, the electronic device 1000 can be a mobile phone, a tablet computer, a notebook computer, a smart bracelet, a smart watch, a smart door lock and other devices. In Figure 1 the illustrated embodiment, the electronic device 1000 is a mobile phone.

[0034] Please refer to Figure 2 , the fingerprint recognition module 100 according to the embodiments of the present application includes a plurality of detection pixel units 110 arranged in an array, and the detection pixel unit 110 includes a fingerprint detection circuit 10.

[0035] It can be understood that the fingerprint recognition module 100 can convert the capacitance value into two-dimensional image data by arranging the detection pixel units 110 in an array, and the detection pixel unit 110 is driven by the fingerprint detection circuit 10 to realize fingerprint detection and data reading.

[0036] Please refer to Figure 3 and Figure 4 , the fingerprint detection circuit 10 according to the embodiments of the present application includes a sensing electrode 11, an amplifying transistor T1 and a feed-through capacitor Cst connected to the sensing electrode 11. The sensing electrode 11 is used to sense the finger to form a sensing capacitance. The sensing electrode 11 and the feed-through capacitor Cst are connected in parallel to the gate of the amplifying transistor T1. The feed-through capacitor Cst receives the excitation signal V EXC and generates a sensing voltage signal with the sensing capacitance. The amplifying transistor T1 generates a fingerprint voltage signal according to the sensing voltage signal.

[0037] In the fingerprint detection circuit 10, fingerprint recognition module 100, and electronic device 1000 according to the embodiments of the present application, a feed-through capacitor Cst is used to receive an excitation signal V EXC to generate a feed-through effect, causing the gate voltage of the amplification transistor T1 to change to form a sensed voltage signal, which can shorten the signal excitation time and accelerate the fingerprint unlocking speed. At the same time, the pulse signal frequency of the excitation signal V EXC can be relatively low, thereby reducing the AC coupling interference and reducing the interference source. The signal amplification function of the fingerprint detection signal can amplify the fingerprint signal, reduce the noise interference of the trace load capacitance on the signal, improve the signal quality, and increase the sensing area.

[0038] Specifically, the fingerprint recognition module 100 according to the embodiments of the present application can be a self-capacitive fingerprint recognition module 100. At this time, each detection pixel unit 110 includes an induction electrode, and the induction electrodes in the fingerprint recognition module 100 are arranged in an array.

[0039] In this way, the induction electrode can form an induction capacitance with the finger. When the feed-through capacitor Cst receives the excitation signal V EXC , the voltage across the feed-through capacitor Cst will change, that is, the voltage at the gate of the amplification transistor T1 changes to form a sensed voltage signal, so that the amplification transistor T1 can generate a fingerprint detection signal. The voltage change at the gate of the amplification transistor T1 can be calculated according to the following conditional formula:

[0040]

[0041] where V in is the sensed voltage signal, V Exc is the excitation signal, C st is the feed-through capacitor, and C Finger is the sensing capacitance.

[0042] When the user's finger touches the surface of the fingerprint recognition module 100, the sensing capacitances formed by the ridges and valleys of the finger fingerprint are different. Therefore, when the feed-through capacitor Cst receives the excitation signal V EXC , the sensed voltage signals generated by the voltage change at the gate of the amplification transistor T1 are different, and the amplification transistor T1 can generate different fingerprint voltage signals corresponding to the ridges and valleys.

[0043] In some embodiments, the capacitance value of the feed-through capacitor Cst can be 20 fF - 30 fF.

[0044] In this way, the feed-through capacitor Cst can be on the same order of magnitude as the sensing capacitance, and the capacitance value is comparable to the input capacitance of fingerprint acquisition, ensuring the reliability of detection.

[0045] Figure 1FIG. 0 shows the application of the fingerprint recognition module 100 according to the embodiments of the present application in a mobile phone. It can be understood that in the fingerprint detection circuit 10 according to the embodiments of the present application, the feedthrough capacitor Cst is used to receive the excitation signal V EXC generates a feedthrough effect, improves the time required for signal excitation and the internal trace design of the module, and can achieve a larger area of fingerprint sensing. Thus, in other embodiments, such as Figure 5 and Figure 6 shown, the fingerprint recognition module 100 can also be used in large-area biological surface feature recognition devices such as multi-fingerprint detection devices (e.g., four-fingerprint detection devices) or palmprint detection devices, which are not specifically limited herein.

[0046] Please refer to Figure 3 and Figure 4 again. In some embodiments, the fingerprint detection circuit 10 includes a power supply signal Vdd connected to the drain of the amplifying transistor T1.

[0047] Specifically, the gate of the amplifying transistor T1 can be used as the input signal terminal, and the source can be used as the output terminal. The amplifying transistor T1 can amplify the sensed voltage signal input to the gate to generate a fingerprint voltage signal.

[0048] In some embodiments, the fingerprint detection circuit 10 includes a switching transistor T2 connected to the amplifying transistor T1. The switching transistor T2 receives a read signal to output a fingerprint voltage signal.

[0049] Specifically, the switching transistor T2 includes a first pole connected to the source of the amplifying transistor T1 and a second pole for outputting the fingerprint voltage signal. When the switching transistor T2 receives the read signal, the first pole and the second pole of the switching transistor T2 are turned on. For the fingerprint recognition module 100, multiple detection pixel units 110 sequentially scan and read and output the fingerprint voltage signals of each detection pixel unit 110. The embodiments of the present application can achieve the signal reading of the corresponding detection pixel unit 110 by controlling the on and off of the switching transistor T2 through the read signal.

[0050] It should be noted that the switching transistor T2 can be a thin-film transistor or a field-effect transistor or other switching devices with the same characteristics. The source and drain of the switching transistor T2 adopted here can be symmetric in structure, so there is no difference between its source and drain in structure. In the embodiments of the present application, in order to distinguish the two poles of the switching transistor T2 other than the gate, one of the poles is directly described as the first pole and the other as the second pole. Therefore, the source and drain of the switching transistor T2 in this embodiment can be interchanged as needed.

[0051] In some embodiments, the read signal includes a high-level voltage signal VGH and / or a low-level voltage signal VGL.

[0052] It can be understood that the read signal can refer to a voltage signal that can turn on the first and second poles of the switching transistor T2. Transistors can be classified into N-type and P-type transistors according to their characteristics. When the switching transistor T2 is an N-type transistor, the read signal can be a high-level voltage signal VGH (for example, 15V), and when the switching transistor T2 is a P-type transistor, the read signal can be a low-level voltage signal VGL (for example, -8V).

[0053] Furthermore, the read signal can output a high-level voltage signal VGH and a low-level voltage signal VGL respectively at different time periods. At this time, when the switching transistor T2 is an N-type transistor, the switching transistor T2 is turned on during the time period when the read signal outputs the high-level voltage signal VGH to turn on the first and second poles of the switching transistor T2, and is turned off during the time period when the read signal outputs the low-level voltage signal VGL to disconnect the first and second poles of the switching transistor T2. In this way, the fingerprint detection circuit 10 reads and outputs the fingerprint voltage signal during the time period when the read signal outputs a high-level voltage. Correspondingly, those of ordinary skill in the art can understand the implementation manner of the switching transistor T2 using a P-type transistor according to the implementation manner of the N-type transistor.

[0054] In some embodiments, the fingerprint detection circuit 10 includes an operational amplifier AMP connected to the switching transistor T2, and the operational amplifier AMP is used to amplify the fingerprint voltage signal.

[0055] In some embodiments, the fingerprint detection circuit 10 includes a reset module 12, and the reset module 12 is connected to the gate of the amplification transistor T1.

[0056] In this way, the fingerprint detection circuit 10 can reset the gate of the amplification transistor T1 through the reset transistor T3, avoiding the influence of residual charges on the sensing electrode 11 and the feed-through capacitor Cst on fingerprint detection.

[0057] In some embodiments, before each detection pixel unit 110 performs fingerprint detection, the gate of the amplification transistor T1 is first reset through the reset module 12, so that the initial states of the sensing electrode 11 and the feed-through capacitor Cst are the same each time detection is performed, ensuring the accuracy of fingerprint detection.

[0058] In other embodiments, after each output of the fingerprint voltage signal is completed, the gate of the amplification transistor T1 is reset using the reset module 12. Similarly, the influence of residual charges on the sensing electrode 11 and the feed-through capacitor Cst on fingerprint detection can be avoided.

[0059] In some embodiments, the reset module 12 includes a reset transistor T3, and the reset transistor T3 receives a reset control signal V RSTThe reset voltage signal Vdr can be written to the gate of the amplifying transistor T1.

[0060] The reset transistor T3 may include a first pole connected to the reset voltage signal Vdr and a second pole connected to the gate of the amplifying transistor T1. Accordingly, the reset transistor T3 may be a thin-film transistor or a field-effect transistor or other switching devices with the same characteristics. The source and drain of the reset transistor T3 adopted here may be symmetric in structure, so there may be no difference between its source and drain in structure. In order to distinguish the two poles of the reset transistor T3 other than the gate in the embodiment of the present application, one of the poles is directly described as the first pole and the other as the second pole. Therefore, the source and drain of the reset transistor T3 in this embodiment can be interchanged as needed.

[0061] In some embodiments, the reset control signal V RST includes a high-level voltage signal VGH and / or a low-level voltage signal VGL.

[0062] It can be understood that the reset control signal V RST may refer to a voltage signal that can turn on the first and second poles of the reset transistor T3. According to the characteristics of transistors, transistors can be divided into N-type and P-type transistors. When the reset transistor T3 is an N-type transistor, the reset control signal V RST can be a high-level voltage signal VGH (for example, 18V). When the reset transistor T3 is a P-type transistor, the reset control signal V RST can be a low-level voltage signal VGL (for example, -8V).

[0063] Further, the reset control signal V RST can output a high-level voltage signal VGH and a low-level voltage signal VGL at different time periods. At this time, when the reset transistor T3 is an N-type transistor, the reset transistor T3 is turned on during the time period when the reset control signal VRST outputs the high-level voltage signal VGH to turn on the first and second poles of the reset transistor T3, and is turned off during the time period when the reset control signal V RST outputs the low-level voltage signal VGL to disconnect the first and second poles of the reset transistor T3. In this way, the fingerprint detection circuit 10 writes the reset voltage signal Vdr to the gate of the amplifying transistor T1 during the time period when the reset control signal V RST outputs a high-level voltage. Accordingly, those of ordinary skill in the art can understand the implementation manner of the reset transistor T3 using a P-type transistor according to the implementation manner of the N-type transistor.

[0064] In some embodiments, the reset voltage signal Vdr can be 0V.

[0065] In some embodiments, the excitation signal V EXCis a square wave signal.

[0066] It can be understood that in this application, the excitation signal V EXC generates a feedthrough effect on the feedthrough capacitor Cst, causing the voltage at the gate of the amplification transistor T1 to change. By driving with a square wave signal within a certain duty cycle time, the signal excitation time can be shortened, and the fingerprint unlocking speed can be accelerated. At the same time, the pulse signal frequency can be relatively low, reducing the AC coupling interference and the interference source.

[0067] In some embodiments, the excitation signal V EXC can be 0 - 15V.

[0068] Specifically, when the excitation signal V EXC is 5V, the change rate of the output fingerprint voltage signal is the largest. As the excitation signal V EXC increases, when the gate voltage is greater than the power supply voltage, the amplification transistor T1 deviates from the amplification region, and the output fingerprint voltage signal appears saturated.

[0069] In some embodiments, the fingerprint recognition module 100 includes an array substrate 120, and a fingerprint detection circuit 10 is formed on the array substrate 120.

[0070] In this way, by forming the fingerprint detection circuit 10 on the array substrate 120 to drive the detection pixel unit 110 to detect fingerprints, circuit integration is achieved, which is beneficial to the miniaturized design of the fingerprint recognition module 100.

[0071] Please refer to Figure 7 and Figure 8 , in some embodiments, the array substrate 120 includes an active layer 122, a gate insulating layer 123, a gate layer 124, an interlayer dielectric layer 125, a first conductive layer 126, a planarization layer 127, and a second conductive layer 128 that are sequentially disposed on a substrate 121.

[0072] The array substrate 120 of this embodiment can be manufactured by a Low Temperature Poly-silicon (LTPS) process. Due to the high carrier mobility, the transistor can obtain a higher on-off current ratio, and the transistors of each detection pixel unit 110 can be designed in a miniaturized manner.

[0073] The array substrate 120 may include a substrate 121. An active layer 122 may be formed on the substrate 121 by a low-temperature polysilicon process. The active layer 122 may have a predetermined pattern. Then, a gate insulating layer 123 is disposed on the active layer 122, and a gate layer 124 is formed on the gate insulating layer 123. Next, an interlayer dielectric layer 125 is formed on the gate layer 124, and a first conductive layer 126 is formed on the interlayer dielectric layer 125. The first conductive layer 126 may be designed as a trace of the fingerprint detection circuit 10. Each trace of the first conductive layer 126 may be connected to the active layer 122 or the gate layer 124 through vias in the interlayer dielectric layer 125 and the gate insulating layer 123. Specifically, in one example, the first conductive layer 126 may be a metal layer. Finally, a planarization layer 127 is formed on the gate layer 124 and a second conductive layer 128 is formed on the planarization layer 127. The second conductive layer 128 may be connected to the gate layer 124 through a via in the planarization layer 127. For example, the second conductive layer 128 may be an induction electrode and / or an electrode of a feed-through capacitor Cst connected to the gate of the amplifying transistor T1 in the gate layer 124. Specifically, in one example, the second conductive layer 128 may be indium tin oxide (ITO).

[0074] In this application, unless otherwise clearly specified and defined, the first feature being “on” or “under” the second feature may include direct contact between the first and second features, or may include indirect contact between the first and second features through additional features therebetween. Moreover, the first feature being “above”, “over” and “on top of” the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature has a higher horizontal height than the second feature. The first feature being “under”, “below” and “beneath” the second feature includes the first feature being directly below and obliquely below the second feature, or merely indicating that the first feature has a lower horizontal height than the second feature.

[0075] In the description of this specification, the description with reference to terms such as “one embodiment”, “some embodiments”, “illustrative embodiments”, “examples”, “specific examples”, or “some examples” etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0076] Although embodiments of the present application have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present application. The scope of the present application is defined by the claims and their equivalents.

Claims

1. A fingerprint detection circuit, characterized in that, Comprising: A sensing electrode for sensing a finger to form a sensing capacitance; And An amplifying transistor and a feed-through capacitor connected to the sensing electrode. The sensing electrode and the feed-through capacitor are connected in parallel to the gate of the amplifying transistor. The feed-through capacitor receives an excitation signal and generates a sensing voltage signal with the sensing capacitance. The amplifying transistor generates a fingerprint voltage signal according to the sensing voltage signal, and the excitation signal is a low-frequency square wave signal.

2. The fingerprint detection circuit according to claim 1, wherein The fingerprint detection circuit includes a switching transistor connected to the amplifying transistor. The switching transistor receives a read signal to output the fingerprint voltage signal.

3. The fingerprint detection circuit according to claim 2, wherein The fingerprint detection circuit includes an operational amplifier connected to the switching transistor. The operational amplifier is used to amplify the fingerprint voltage signal.

4. The fingerprint detection circuit according to claim 1, wherein The fingerprint detection circuit includes a reset module connected to the gate of the amplifying transistor.

5. The fingerprint detection circuit according to claim 4, wherein The reset module includes a reset transistor. The reset transistor receives a reset control signal to write a reset voltage signal to the gate of the amplifying transistor.

6. A fingerprint recognition module, characterized in that, Including a plurality of detection pixel units arranged in an array. The detection pixel unit includes the fingerprint detection circuit according to any one of claims 1-5.

7. The fingerprint recognition module according to claim 6, wherein, The fingerprint recognition module includes an array substrate on which the fingerprint detection circuit is formed.

8. The fingerprint recognition module according to claim 7, wherein, The array substrate includes an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a first conductive layer, a planarization layer, and a second conductive layer sequentially disposed on a substrate.

9. An electronic device, characterized in that, Including the fingerprint recognition module according to any one of claims 6-8.

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