Semiconductor device

Abstract

The present application suppresses the decrease in the joining property of a bonding wire. A semiconductor device has a case that has a receiving opening portion that receives a first semiconductor chip and a second semiconductor chip in an opening of a front surface, and a control wiring portion (35a) that is mounted by an adhesive member (39b) in a wiring mounting region (32f) that is recessed along one side of the receiving opening portion in an opening edge portion of the front surface. At this time, the control wiring portion (35a) of the lead frame is in close contact with the case by the adhesive member (39b). Thus, if wire bonding is performed on a control IC (37) that is joined to the control wiring portion (35a), the joining property of the bonding wire to the control IC (37) can be improved by suppressing the vibration of the control wiring portion (35a) that is in close contact with the case.

Description

TECHNICAL FIELD

[0001] The present application relates to a semiconductor device. BACKGROUND

[0002] A semiconductor device includes a power device. The power device is, for example, an IGBT (Insulated Gate Bipolar Transistor), a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). Also, the semiconductor device is used as, for example, a power conversion device. Such a semiconductor device includes a semiconductor element including the power device, a control IC (Integrated Circuit), a plurality of lead frames, and a case that houses the semiconductor element and the control IC. The lead frame is insert-molded in the case in a manner that one end portion is in the case and the other end portion is extended out of the case. At this time, a main surface of the portion of the lead frame in the case is exposed to the surface. The control IC is mounted on the portion of the lead frame exposed to the surface in the case via an adhesive member. The semiconductor element and the lead frame and the control IC are mechanically and electrically connected via a lead. Also, the lead frame is sometimes composed of a metal having conductivity, and the case is sometimes composed of a PPS (Polyphenylene Sulfide) resin.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: Japanese Patent Application Publication No. 2014-146704 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] Generally, the close connection of the PPS resin and the metal is weak. The lead frame composed of the metal that is insert-molded in the case composed of the PPS resin generates a gap with the case. If the control IC on the lead frame is wire-bonded in this state, the lead frame vibrates with the control IC due to the ultrasonic vibration from the bonding tool and disperses the ultrasonic wave. As a result, the bonding lead cannot be reliably joined with the control IC. Also, the same applies if the bonding lead is directly wire-bonded with the lead frame. If the joining of the bonding lead is unstable, electrical failure is easily generated in the semiconductor device and the reliability of the semiconductor device is reduced.

[0008] The present application has been achieved in view of such a point, and aims to provide a semiconductor device capable of suppressing a reduction in the joining property of a bonding lead.

[0009] TECHNICAL SOLUTION

[0010] According to one aspect of the present invention, a semiconductor device is provided, the semiconductor device having a semiconductor element, a wiring component extending in one direction, and a housing having an opening on the front side for receiving the semiconductor element, and the wiring component being mounted in a wiring mounting area by an adhesive component, the wiring mounting area being recessed along one side of the opening edge on the front side.

[0011] Technical effect

[0012] According to the disclosed technology, it is possible to suppress the reduction in the bonding strength of the bonding wires, thereby suppressing the reduction in the reliability of the semiconductor device. Attached Figure Description

[0013] Figure 1 This is a top view of the semiconductor device according to the first embodiment.

[0014] Figure 2 This is a cross-sectional view of the semiconductor device according to the first embodiment.

[0015] Figure 3 This is a cross-sectional view of the main parts of the semiconductor device according to the first embodiment (one of them).

[0016] Figure 4 This is a cross-sectional view of the main parts of the semiconductor device in the first embodiment (second part).

[0017] Figure 5 This is a top view of the semiconductor device according to the second embodiment.

[0018] Figure 6 This is a cross-sectional view of the main parts of the semiconductor device in the second embodiment.

[0019] Figure 7 This is an enlarged top view (one of the three) of the lead frame included in the semiconductor device of the third embodiment.

[0020] Figure 8 This is an enlarged top view (second one) of the lead frame included in the semiconductor device of the third embodiment.

[0021] Figure 9 This is a top view of the semiconductor device according to the fourth embodiment.

[0022] Figure 10 This is a cross-sectional view of the main parts of the semiconductor device according to the fourth embodiment (one of them).

[0023] Figure 11 This is a cross-sectional view (second one) of the main parts of the semiconductor device according to the fourth embodiment.

[0024] Figure 12This is a cross-sectional view of the main parts of the semiconductor device in the fourth embodiment (third one).

[0025] Symbol Explanation

[0026] 10: Semiconductor device; 20: Semiconductor unit; 21: First semiconductor chip; 22: Second semiconductor chip; 23: Circuit pattern; 24: Insulating substrate; 25: Heat sink; 26: Bonding wire; 30: Housing; 31: Upper frame; 32: Lower main body; 32a: Reception opening; 32a1: Inner wall surface; 32b: First wiring area; 32c: Second wiring area; 32d, 32e: Side; 32f: Wiring mounting area; 32f1, 32f3: Mounting side; 32f2: Mounting bottom surface; 32g1. 32g3: Longitudinal gap; 32g2: Transverse gap; 33, 34, 35, 36, 135: Lead frame; 33a, 34a, 35a, 135a: Control wiring section; 33b, 34b, 35b: Control terminal section; 35a1, 35b3: Wiring side; 35a2: Wiring back; 35a4: Wiring front; 35a5: Burr; 35a6: Collapsed edge; 35a7: Cut; 36a: Main current wiring section; 36b: Main current terminal section; 37: Control IC; 38: Package component; 39a, 39b: Bonding component Detailed Implementation

[0027] The following description of the embodiments refers to the accompanying drawings. It should be noted that in the following description, "front" and "top" are used interchangeably. Figure 2 In the semiconductor device 10, the surface facing upwards is indicated. Similarly, "upper" is used in... Figure 2 In semiconductor device 10, the upper side is indicated. "Back side" and "bottom side" are indicated in... Figure 2 In the semiconductor device 10, the downward-facing surface is indicated. Similarly, "down" is used in... Figure 2 The direction shown in the semiconductor device 10 is the lower side. The same directionality is indicated in other figures as needed. "Front side," "top," "upper," "back side," "bottom," "lower," and "side" are merely convenient expressions for determining relative positional relationships and do not limit the technical concept of the invention. For example, "upper" and "lower" do not necessarily indicate the vertical direction relative to the ground. That is, the directions of "upper" and "lower" are not limited to the direction of gravity. Furthermore, in the following description, "main component" indicates a content of 80 vol% or more.

[0028] [First Implementation Method]

[0029] Regarding the semiconductor device of the first embodiment, using Figures 1-3 Please provide an explanation. Figure 1 This is a top view of the semiconductor device according to the first embodiment. Figure 2This is a cross-sectional view of the semiconductor device according to the first embodiment. Figure 3 This is a cross-sectional view of the main components of the semiconductor device according to the first embodiment. It should be noted that... Figure 1 Description of the encapsulation component 38 is omitted. Figure 2 yes Figure 1 The cross-sectional view of the single-dash line XX in the diagram. Figure 3 Will Figure 2 The area near the lead frame 35 of the semiconductor device 10 is magnified and shown. Additionally, in... Figure 3 The description of bonding wire 26 and package component 38 is omitted.

[0030] The semiconductor device 10 has a semiconductor unit 20, a plurality of (three shown in the figure) control ICs 37, and a housing 30 that houses the semiconductor unit 20 and the control ICs 37 and has lead frames 33 to 36.

[0031] The semiconductor unit 20 has six sets of first semiconductor chips 21 and second semiconductor chips 22. The semiconductor unit 20 also has six circuit patterns 23, each having a set of first semiconductor chips 21 and second semiconductor chips 22 disposed on the front side, and an insulating substrate 24 on which these circuit patterns 23 are formed. It should be noted that, for such a semiconductor unit 20, the first semiconductor chips 21 and second semiconductor chips 22, and the circuit patterns 23 disposed on the front side of the first semiconductor chips 21 and second semiconductor chips 22 are grouped together, and arranged, for example, in six groups, along the long side of the insulating substrate 24.

[0032] It should be noted that, Figure 1 In this context, only the case where six groups of first semiconductor chips 21 and second semiconductor chips 22 are provided is indicated. It is not limited to six groups; the number of groups can correspond to the technical specifications of the semiconductor device 10, etc. One control IC 37 is provided for every two groups of first semiconductor chips 21 and second semiconductor chips 22, for a total of three control ICs 37. It should be noted that in this embodiment, unless a multiple configuration is specifically described, only one of the indicated symbols is used for explanation.

[0033] The first semiconductor chip 21 includes a switching element. Examples of switching elements include IGBTs and power MOSFETs. When the first semiconductor chip 21 is an IGBT, it has a collector as the main electrode on the back side and a gate and an emitter as the main electrode on the front side. When the first semiconductor chip 21 is a power MOSFET, it has a drain as the main electrode on the back side and a gate and a source as the main electrode on the front side. The back side of the first semiconductor chip 21 is bonded to the circuit pattern 23 by a bonding member (not shown). It should be noted that the bonding member in this embodiment uses solder or a sintered metal. The solder includes lead-free solder with a predetermined alloy as the main component. The predetermined alloy is, for example, at least one alloy including tin-silver, tin-zinc, or tin-antimony. The solder may also contain additives such as copper, bismuth, indium, nickel, germanium, cobalt, or silicon. The sintered metal uses, for example, aluminum or copper.

[0034] The second semiconductor chip 22 includes a diode element. Examples of diode elements include SBD (Schottky Barrier Diode), PiN (P-intrinsic-N) diodes, and FWD (Free Wheeling Diode). This second semiconductor chip 22 has an output electrode (cathode) as the main electrode on its back side and an input electrode (anode) as the main electrode on its front side. The back side of the second semiconductor chip 22 is bonded to the circuit pattern 23 using bonding components.

[0035] The thickness of the first semiconductor chip 21 and the second semiconductor chip 22 is, for example, 180 μm or more and 220 μm or less, with an average thickness of about 200 μm. Alternatively, an RC (Reverse-Conducting) IGBT, which has the functions of both IGBT and FWD, can be used to replace the first and second semiconductor chips 21 and 22.

[0036] The circuit pattern 23 is configured with a metal with excellent conductivity as its main component. Such a metal is, for example, silver, copper, nickel, or an alloy containing at least one of these. Furthermore, the thickness of the circuit pattern 23 is 0.5 mm or more and 1.5 mm or less. To improve corrosion resistance, the surface of the circuit pattern 23 can be plated. The plating material used is, for example, nickel, a nickel-phosphorus alloy, or a nickel-boron alloy. The circuit pattern 23 is formed by etching a conductive plate or foil formed on one side of the insulating substrate 24. Alternatively, the conductive plate can be bonded to one side of the insulating substrate 24 to form the circuit pattern 23. It should be noted that the thickness of the circuit pattern 23 is preferably 0.1 mm or more and 1.0 mm or less, more preferably 0.2 mm or more and 0.5 mm or less.

[0037] The insulating substrate 24 can be made of, for example, an organic insulating layer or a ceramic substrate. The organic insulating layer is composed of a combination of a resin with low thermal resistance and a material with high thermal conductivity. The former resin is, for example, an insulating resin such as epoxy resin or liquid crystal polymer. The latter material is, for example, boron nitride, alumina, or silicon oxide. The ceramic substrate is made of ceramic with good thermal conductivity. The ceramic is composed of a material whose main components are, for example, alumina, aluminum nitride, or silicon nitride. Furthermore, the thickness of the insulating substrate 24 is 0.1 mm or more and 2.0 mm or less.

[0038] The heat sink 25 is constructed with a metal having excellent thermal conductivity as its main component. Furthermore, the corners of the heat sink 25 are machined with a radius (R) surface. Such a metal is, for example, aluminum, iron, silver, copper, or an alloy containing at least one of these. Additionally, the thickness of the heat sink 25 is 0.1 mm or more and 2.0 mm or less. To improve corrosion resistance, the surface of the heat sink 25 can be plated. Examples of plating materials used include, for example, nickel, nickel-phosphorus alloys, and nickel-boron alloys.

[0039] It should be noted that when the insulating substrate 24 is a ceramic substrate and the heat sink 25 is a metal foil, DCB (Direct Copper Bond) substrates and AMB (Active Metal Brazed) substrates can be used as the circuit pattern 23, the insulating substrate 24, and the heat sink 25. It should also be noted that the shape, arrangement, and number of the circuit pattern 23 of the semiconductor unit 20 having such a configuration, as well as the arrangement and number of the first semiconductor chip 21 and the second semiconductor chip 22, are examples and are not limited to. Figure 1 and Figure 2 And can be appropriately set according to design, etc.

[0040] Furthermore, heat dissipation can be improved by mounting the cooler (not shown) to the back of the heat sink 25 using solder or silver solder. In this case, the cooler is configured with a metal with excellent thermal conductivity as its main component. Examples of such metals include aluminum, iron, silver, copper, or alloys containing at least one of these. Additionally, as the cooler, a cooling device such as a heat sink or water cooling can be used. Alternatively, the heat sink 25 can be integrated with such a cooler. In this case, it is configured with a metal with excellent thermal conductivity as its main component. Examples of such metals include aluminum, iron, silver, copper, or alloys containing at least one of these. Furthermore, to improve corrosion resistance, a plating material can be formed on the surface of the heat sink integrated with the cooler through a plating process. Examples of plating materials include nickel, nickel-phosphorus alloys, and nickel-boron alloys.

[0041] The control IC 37 is bonded to three locations of the control wiring portion 35a of the lead frame 35 (described later) via adhesive members 39b. It should be noted that, depending on the technical specifications of the semiconductor device 10, at least one control IC 37 may be replaced with electronic components other than those for control. Examples of such electronic components include thermistors, capacitors, and resistors.

[0042] It should be noted that the adhesive component 39b (and the adhesive component 39a described later) uses a thermoplastic resin that softens and cures according to temperature, or an adhesive that cures through a chemical reaction when heated. Examples of thermoplastic resins include, for example, vinyl acetate resin, polyvinyl alcohol, and polyamide resin. Examples of thermosetting resins include, for example, epoxy resin, silicone resin, polyimide resin, urethane resin (polyurethane), and ester resin (polyester). Furthermore, the adhesive component 39b may be conductive. In addition to the aforementioned thermoplastic or thermosetting resins, such an adhesive component 39b may also contain, for example, metal particles with excellent thermal conductivity as fillers. These metal particles are configured with, for example, silver, copper, or nickel as the main components.

[0043] Next, the housing 30 will be described. The housing 30 includes an upper frame portion 31, a lower main body portion 32, and lead frames 33-36. The upper frame portion 31 is frame-shaped (ring-shaped). When viewed from above, the outer perimeter of the upper frame portion 31 may be the same as the outer perimeter of the lower main body portion 32. In addition, when viewed from above, the inner perimeter of the upper frame portion 31 may be larger than the receiving opening 32a of the lower main body portion 32. The upper frame portion 31 is integrally formed along the outer edge of the front side of the lower main body portion 32. The lower main body portion 32 is rectangular when viewed from above, and has a receiving opening 32a extending from the front side to the back side at approximately the center of the front side. When viewed from above, the receiving opening 32a is rectangular with a long side extending along the long side of the lower main body portion 32. The size of the receiving opening 32a is smaller than the size of the semiconductor unit 20 when viewed from above. The semiconductor unit 20 is bonded from the back of the lower main body 32 along the opening edge of the receiving opening 32a via the adhesive member 39a. The lower main body 32 has a first wiring region 32b and a second wiring region 32c on both sides sandwiching the receiving opening 32a.

[0044] Both the upper frame portion 31 and the lower main body portion 32 are made of the same material. This material composition uses a thermosetting resin as the main component and is mixed with filler materials. The thermosetting resin is, for example, epoxy resin, phenolic resin, or maleimide resin. The filler materials are, for example, silica, alumina, boron nitride, or aluminum nitride. As an example of this material, it includes epoxy resin and silica as a filler mixed into the epoxy resin.

[0045] Multiple lead frames 33-35 are located in the housing 30. Figure 1The right-side side 32d extends vertically outward. Multiple lead frames 33-35 are arranged in a row and closely abut against the side 32d of the lower main body 32. The lead frames 33-35 include control wiring portions 33a-35a and control terminal portions 33b-35b integrally connected to the control wiring portions 33a-35a. The control terminal portions 33b-35b bend midway and face upward toward the semiconductor device 10. It should be noted that the semiconductor device 10 is located on... Figure 1 The lead frames on the right side 32d, except for lead frames 34 and 35, are all lead frames 33. The control terminal portion 33b of each lead frame 33 protrudes from the side 32d of the lower main body 32 into the external space, and the control wiring portion 33a is exposed on the surface of the first wiring area 32b. Additionally, on the side 32d of the lower main body 32, lead frames 34 and 35 are also arranged in a row relative to the first wiring area 32b of the lower main body 32. The control terminal portions 34b and 35b of lead frames 34 and 35 protrude from the side 32d of the lower main body 32 into the external space, and the control wiring portions 34a and 35a are exposed on the surface of the first wiring area 32b and are wired along the side 32d. Specifically, the control wiring portion 35a of the lead frame 35 is provided in the wiring mounting area 32f of the first wiring area 32b of the lower main body 32. It should be noted that the wiring mounting area 32f will be described later. Furthermore, the control IC 37 is respectively bonded to the control wiring portion 35a of the lead frame 35 within the first wiring area 32b via the adhesive member 39b. At this time, the lead frame 35 is grounded. The control IC 37 is appropriately electrically connected to the control wiring portions 33a-35a of the lead frames 33-35 via bonding leads 26. Additionally, the lead frames 33-35 are obtained by punching a metal plate along the shape of each lead frame 33-35. Consequently, burrs and burrs are generated on the front and back edges of the lead frames 33-35 depending on the punching direction.

[0046] Here, the lead frame 35 installed in the housing 30 will be described in detail. The housing 30 is obtained by inserting lead frames 33 to 36 into the upper frame portion 31 and the lower main body portion 32. (As follows...) Figure 2 As shown, lead frames 33-36 are embedded in the front surface of the lower main body 32. The front surface of lead frames 33-36 is substantially on the same plane as the front surface of the lower main body 32. More specifically, a portion of the front surface of lead frames 33-36 may be on the same plane as the front surface of the lower main body 32. For example, this also includes cases where the tip of the burr 35a5 and a portion of the collapsed edge 35a6 generated on the wiring front surface 35a4 (described later) are on the same plane as the front surface of the lower main body 32.

[0047] The control wiring portion 35a of the lead frame 35 is mounted in the wiring mounting area 32f of the first wiring area 32b. This wiring mounting area 32f is recessed along one side of the receiving opening 32a at its opening edge. That is, the wiring mounting area 32f faces the receiving opening 32a and is formed in a stepped recess relative to the front of the lower main body portion 32. The wiring mounting area 32f is composed of a mounting side surface 32f1 and a mounting bottom surface 32f2. The mounting side surface 32f1 and the opening direction of the receiving opening 32a (in...) Figure 2 as well as Figure 3 The mounting base 32f2 is parallel to the mounting side 32f1. Thus, the mounting side 32f1 and mounting base 32f2 of the wiring mounting area 32f are stepped. At this time, the wiring side 35a1 of the control wiring section 35a is exposed on the side of the receiving opening 32a, and is approximately flush with the inner wall surface 32a1 of the lower main body section 32. It should be noted that... Figure 3 The diagram illustrates a situation where burrs 35a5 are generated along the wiring sides 35a1 and 35a3 of the wiring front side 35a4 of the control wiring section 35a, and collapsed edges 35a6 are generated along the wiring sides 35a1 and 35a3 of the wiring back side 35a2. However, this is not a limitation; burrs 35a5 may also be generated on the wiring back side 35a2, and collapsed edges 35a6 may be generated on the wiring front side 35a4 (for example, see reference...). Figure 4 ).

[0048] In addition, in the first embodiment, the width of the control wiring portion 35a is approximately equal to the width of the control IC 37, or the width of the control wiring portion 35a is greater than the width of the control IC 37. It should be noted that the width of the control wiring portion 35a is the width in a direction perpendicular to the extending direction (wiring direction) of the control wiring portion 35a. The same applies to the width of the control IC 37 disposed on the control wiring portion 35a. The control IC 37 is attached to the wiring front surface 35a4 of such a control wiring portion 35a by an adhesive member 39b. The adhesive member 39b fills the gap (vertical gap 32g1) between the wiring side surface 35a3 of the control wiring portion 35a and the mounting side surface 32f1 of the lower main body portion 32, starting from between the control IC 37 and the wiring front surface 35a4, up to the gap (transverse gap 32g2) between the wiring back surface 35a2 of the control wiring portion 35a and the mounting bottom surface 32f2 of the lower main body portion 32. It should be noted that the adhesive component 39b only needs to fill at least a portion of the longitudinal gap 32g1 from the front side of the wiring portion 35a4 and the front side of the lower main body portion 32. Preferably, the adhesive component 39b filling the longitudinal gap 32g1 extends to the transverse gap 32g2 between the back side of the wiring portion 35a2 and the mounting bottom surface 32f2 of the lower main body portion 32. More preferably, the adhesive component 39b fills the transverse gap 32g2 to more than half its length from the wiring side side 35a3 to the wiring side side 35a1.

[0049] As described above, the lead frames 33-36 are made of metal, and the upper frame portion 31 and the lower main body portion 32 are made of PPS resin, which is a thermosetting resin. The lead frames 33-36 are insert-molded with PPS resin, thereby obtaining a housing 30 containing the lead frames 33-36 in the lower main body portion 32. However, generally, the bonding strength between PPS resin and metal is weak. Gaps may occur between the lead frames 33-36 embedded in the lower main body portion 32 and their embedding positions. In particular, when wire bonding is performed on the wiring front side 35a4 of the lead frame 35, the lead frame 35 sometimes vibrates along with the control IC 37, making it difficult to reliably bond the bonding wires to the control IC 37.

[0050] Therefore, the adhesive member 39b, which bonds the control IC 37 to the wiring front side 35a4 of the lead frame 35, is filled into the longitudinal gap 32g1 between the wiring side side 35a3 of the control wiring portion 35a and the mounting side side 32f1 of the lower main body portion 32. Furthermore, the adhesive member 39b is filled into the transverse gap 32g2 between the wiring back side 35a2 of the control wiring portion 35a and the mounting bottom surface 32f2 of the lower main body portion 32. The control wiring portion 35a of the lead frame 35 is in close contact with the wiring mounting area 32f of the lower main body portion 32. Therefore, when wire bonding is performed on the control IC 37 mounted on the wiring front side 35a4 of the lead frame 35, vibration of the lead frame 35 is suppressed. Thus, the bonding wires can be reliably bonded to the control IC 37. It should be noted that in Figure 3 The width direction of the control IC 37 and the control wiring section 35a is indicated in the text. On the other hand, regarding the wiring direction of the control IC 37 and the control wiring section 35a, it is sufficient that the adhesive member 39b exists below the bonding area of ​​the control IC 37. Therefore, if in Figure 1 In this case, the adhesive component 39b only needs to exist in the bonding area corresponding to the control IC 37.

[0051] The adhesive component 39b is inserted into the longitudinal gap 32g1 and the transverse gap 32g2 as follows. A housing 30 is prepared by preparing insert-molded lead frames 33-36. The adhesive component 39b is applied to one of the bonding areas of the control IC 37 on the front side 35a4 of the control wiring section 35a of the lead frame 35, and to the back side of the control IC 37. The control IC 37 is aligned with the bonding area of ​​the front side 35a4. The control IC 37 is then pressed towards the front side 35a4. This expands the adhesive component 39b between the control IC 37 and the front side 35a4, allowing it to penetrate the longitudinal gap 32g1. Furthermore, by pressing the control IC 37, the adhesive component 39b becomes conductive in the longitudinal gap 32g1 and penetrates into the transverse gap 32g2, which communicates with the longitudinal gap 32g1. It should be noted that as long as the adhesive component 39b immersed in the transverse gap 32g2 does not block the bonding areas of the first semiconductor chip 21 and the second semiconductor chip 22, the adhesive component 39b immersed in the transverse gap 32g2 can also protrude to the receiving opening 32a side. Furthermore, by the adhesive component 39b protruding from the transverse gap 32g2 to the receiving opening 32a side, it can be known that the adhesive component 39b has filled the longitudinal gap 32g1 and the transverse gap 32g2. It should be noted that the adhesive component 39b does not need to completely fill the transverse gap 32g2. Once the conduction of the adhesive component 39b to the longitudinal gap 32g1 and the transverse gap 32g2 is completed, the adhesive component 39b is cured. This allows the control IC 37 to be tightly attached to the lead frame 35, and allows the control wiring portion 35a of the lead frame 35 to be tightly attached to the wiring mounting area 32f of the lower main body portion 32. Furthermore, through the anchoring effect on the adhesive member 39b generated by the burrs 35a5 of the control wiring portion 35a, the control wiring portion 35a can be more firmly adhered to the adhesive member 39b. Further, a collapsed edge 35a6 is formed on the wiring back side 35a2. Therefore, the connecting portion between the longitudinal gap 32g1 and the transverse gap 32g2 has curvature. Consequently, the adhesive member 39b can easily penetrate from the longitudinal gap 32g1 into the transverse gap 32g2.

[0052] Multiple lead frames 36 are integrated into a row on a side 32e of the lower main body 32, opposite to the side 32d. Each lead frame 36 includes a main current wiring section 36a and a main current terminal section 36b integrally connected to the main current wiring section 36a. The main current terminal section 36b bends midway towards the top of the semiconductor device 10. It should be noted that the semiconductor device 10 is located at... Figure 1 All lead frames on the left-side side 32e are lead frames 36. The main current terminal portion 36b of each lead frame 36 protrudes vertically from the side 32e of the lower main body portion 32 into the external space, and the main current wiring portion 36a is exposed on the surface of the second wiring area 32c.

[0053] Each of these lead frames 33-36 can be sandwiched between the back of the upper frame portion 31 and the first wiring area 32b and the second wiring area 32c of the lower main body portion 32. Furthermore, the lead frames 33-36 can be exposed on the lower main body portion 32 on the inner periphery of the upper frame portion 31.

[0054] In the semiconductor unit 20 housed in the housing 30, the first semiconductor chip 21 and the second semiconductor chip 22 are appropriately electrically connected to the lead frames 33-36 and the control IC 37 via bonding leads 26. As described above, in particular, the control IC 37 on the lead frame 35 can be reliably wire-bonded. It should be noted that the connection is not limited to the bonding leads 26, but can also be made by conductive wiring components such as ribbons and / or lead frames. Thus, the desired circuit is formed in the semiconductor device 10. Furthermore, the housing opening 32a of the lower main body 32 and the first wiring region 32b and second wiring region 32c surrounded by the upper frame 31 are encapsulated by the encapsulated component 38. That is, the semiconductor unit 20, the control wiring sections 33a-35a and the main current wiring section 36a of the lead frames 33-36, the bonding leads 26, the control IC 37, etc., within the housing 30 are encapsulated by the encapsulated component 38.

[0055] The encapsulation component 38 comprises a thermosetting resin and a filler material (filler). Examples of thermosetting resins include epoxy resin, phenolic resin, and maleimide resin. Examples of filler materials include silicon oxide, aluminum oxide, boron nitride, or aluminum nitride. As a specific example of the encapsulation component 38, epoxy resin can be used as the main component, and boron nitride can be included in the epoxy resin as a filler. Alternatively, silicone gel can be used as the encapsulation component 38. In this case, after encapsulation using the encapsulation component 38, a housing cover (not shown) is provided on the housing 30 to close the housing 30.

[0056] The semiconductor device 10 described above includes a first semiconductor chip 21, a second semiconductor chip 22, and a lead frame 35 including a control wiring portion 35a extending in one direction. Further, the semiconductor device 10 includes a housing 30, which includes a lower main body portion 32. The lower main body portion 32 has a receiving opening 32a on its front side for receiving the first semiconductor chip 21 and the second semiconductor chip 22. The control wiring portion 35a is mounted to a wiring mounting area 32f by an adhesive member 39b. The wiring mounting area 32f is recessed along one side of the receiving opening 32a on its front side at the opening edge. At this time, the control wiring portion 35a of the lead frame 35 is tightly attached to the housing 30 by the adhesive member 39b. Therefore, if wire bonding is performed on the control IC 37 bonded to the control wiring portion 35a, vibration of the control wiring portion 35a tightly attached to the housing 30 can be suppressed, thereby improving the bonding strength of the bonding wires to the control IC 37. Therefore, it is possible to reduce the occurrence of electrical malfunctions in the semiconductor device 10 and suppress the decrease in the reliability of the semiconductor device 10.

[0057] [Modifications of the First Embodiment]

[0058] Here, as Figure 3 Other methods (variations) in the case of using Figure 4 This describes the situation where the control IC 37 is mounted on the front side 35a4 of the control wiring section 35a of the lead frame 35, spanning the longitudinal gap 32g1 when viewed from above. Figure 4 This is a cross-sectional view of the main components of the semiconductor device according to the first embodiment. It should be noted that... Figure 4 In this context, the description is based on semiconductor device 10. However, in... Figure 4 The following situation is shown: in semiconductor device 10, burrs 35a5 are generated on the back side 35a2 of the wiring, and slumps 35a6 are generated on the front side 35a4 of the wiring.

[0059] The control IC 37 is mounted on the wiring front side 35a4 of the control wiring section 35a of the lead frame 35, spanning the longitudinal gap 32g1 when viewed from above. Because the control IC 37 spans the longitudinal gap 32g1, compared to... Figure 3 In this situation, the bonded component 39b can be more easily introduced into the longitudinal gap 32g1. Therefore, with... Figure 3Similarly, the adhesive component 39b at the bottom of the control IC 37 can be easily inserted into the longitudinal gap 32g1 and the transverse gap 32g2. As a result, the control wiring portion 35a of the lead frame 35 is tightly attached to the wiring mounting area 32f of the lower main body 32. Furthermore, by bridging the longitudinal gap 32g1 with the control IC 37, the upper side of the longitudinal gap 32g1 is blocked by the control IC 37. Therefore, peeling between the adhesive component 39b in the longitudinal gap 32g1 and the lead frame 35 (control wiring portion 35a) or the housing 30 (mounting area 32f of the lower main body 32) can be suppressed. Additionally, the longitudinal gap 32g1 is preferably positioned on the opposite side of the receiving opening 32a compared to the centerline of the control IC 37. Figure 4 The control IC 37 is positioned on the right side of the lead frame 35. More than half of the control IC 37 is disposed on the front side 35a4 of the control wiring portion 35a. This allows for a strong connection between the control IC 37 and the lead frame 35. It should be noted that the center line of the control IC 37 is a line perpendicular to the width direction of the control IC 37 as described above, located at the center of its width.

[0060] Furthermore, burrs 35a5 are formed on the back side 35a2 of the wiring. In this case, the burrs 35a5 of the control wiring portion 35a also have an anchoring effect on the bonding member 39b of the transverse gap 32g2. Furthermore, the spacing of the transverse gap 32g2 can be easily controlled according to the height of the burrs 35a5. For example, if it is desired to narrow the spacing of the transverse gap 32g2, a process such as rounding the tip of the burrs 35a5 can be performed to reduce the height of the burrs 35a5. Therefore, if wire bonding is performed on the control IC 37 that is bonded to the control wiring portion 35a, the vibration of the control wiring portion 35a that is in close contact with the housing 30 can be suppressed, thereby improving the bonding of the bonding wire to the control IC 37. As a result, the occurrence of electrical defects in the semiconductor device 10 can be reduced, thereby suppressing the decrease in the reliability of the semiconductor device 10. Furthermore, a collapsed edge 35a6 is formed on the front side 35a4 of the wiring. Therefore, it is possible to prevent damage to the back side of the control IC 37 at the edge of the control wiring portion 35a of the lead frame 35.

[0061] [Second Implementation]

[0062] In the second embodiment, using Figure 5 and Figure 6 This describes the situation where the width of the control wiring section 35a of the lead frame 35 is narrowed. Figure 5 This is a top view of the semiconductor device according to the second embodiment. Figure 6 This is a cross-sectional view of the main components of the semiconductor device according to the second embodiment. It should be noted that... Figure 5 In the semiconductor device 10 shown, Figure 1The width of the control wiring portion 35a of the lead frame 35 of the semiconductor device 10 shown is narrowed, and regarding other configurations, it is similar to... Figure 1 The semiconductor device 10 is the same. Additionally... Figure 6 Is Figure 5 In the case of Figure 3 The corresponding diagram.

[0063] The semiconductor device 10 includes a lead frame 135 with a control wiring portion 135a and a control terminal portion 35b integrally connected to the control wiring portion 135a. The width of the control wiring portion 135a is narrower than the width of the control wiring portion 35a in the first embodiment. It should be noted that the width of the control wiring portion 135a can be reduced to half the width of the control wiring portion 35a in the first embodiment. By reducing the width of the control wiring portion 135a, the control IC 37 mounted on the control wiring portion 135a must span the longitudinal gap 32g1. When the control IC 37 is mounted on the wiring front surface 35a4 of the control wiring portion 135a of the lead frame 135, spanning the longitudinal gap 32g1 in a top view, it is compatible with... Figure 4 Similarly, compared to Figure 3 In this configuration, the adhesive component 39b can be easily inserted into the longitudinal gap 32g1. Furthermore, by controlling the IC 37 across the longitudinal gap 32g1, the upper side of the longitudinal gap 32g1 is blocked by the control IC 37. Therefore, peeling between the adhesive component 39b in the longitudinal gap 32g1 and the lead frame 35 (control wiring portion 35a) or the housing 30 (mounting area 32f of the lower main body portion 32) can be suppressed. In addition, since the width of the control wiring portion 135a is reduced, it is not necessary to increase the size of the lower main body portion 32. Moreover, since the width of the control wiring portion 135a is reduced, the length of the wiring back surface 35a2 of the control wiring portion 135a is shorter than the length of the wiring back surface 35a2 of the control wiring portion 35a in the first embodiment. Therefore, without increasing the amount of adhesive component 39b, the adhesive component 39b can fill the entire longitudinal gap 32g1 and transverse gap 32g2. Therefore, while maintaining the size of the semiconductor device 10, the control wiring portion 135a can be more firmly attached to the wiring mounting area 32f. Consequently, if wire bonding is performed on the control IC 37 bonded to the control wiring portion 135a, vibration of the control wiring portion 135a attached to the housing 30 can be suppressed, thereby improving the bonding strength of the bonding wires to the control IC 37. As a result, the occurrence of electrical defects in the semiconductor device 10 can be reduced, thus suppressing the decrease in the reliability of the semiconductor device 10.

[0064] [Third Implementation Method]

[0065] In the third embodiment, using Figure 7 and Figure 8This explains the situation where, when viewed from above, a cut is formed on the side opposite to the storage opening 32a of the control wiring section 35a of the lead frame 35. Figure 7 and Figure 8 This is an enlarged top view of the lead frame included in the semiconductor device of the third embodiment. It should be noted that... Figure 7 and Figure 8 These represent the first embodiment viewed from above. Figure 3 In the case where the control wiring section 35a has a cut, furthermore... Figure 7 and Figure 8 In the diagram, the junction area of ​​the control IC 37 of the control wiring section 35a is indicated by a dashed line.

[0066] First, such as Figure 7 As shown in (A), multiple cutouts 35a7 are formed on the side opposite to the receiving opening 32a of the bonding area of ​​the control IC 37 in the control wiring section 35a. It should be noted that... Figure 7 The cutout 35a7 shown is rectangular when viewed from above. The cutout 35a7 is not limited to a rectangle; it can also be triangular or semi-circular. Multiple cutouts 35a7 do not necessarily have identical shapes or sizes. Furthermore, not limited to the case where the cutout 35a7 is formed perpendicular to the wiring direction in the control wiring portion 35a, the cutout 35a7 can also be formed obliquely relative to the extending direction of the control wiring portion 35a. Since the housing 30 includes such a lead frame 35 and is insert-molded, resin constituting the housing 30 is also poured between the multiple cutouts 35a7 in the control wiring portion 35a. The control IC 37 is mounted on the control wiring portion 35a with the multiple cutouts 35a7 formed therein via the adhesive member 39b. The adhesive member 39b is inserted into the longitudinal gap 32g1 and the transverse gap 32g2 in the same manner as in the first embodiment, and as... Figure 7 As shown in (B), adhesive members 39b are also injected between the cuts 35a7 when viewed from above. Therefore, compared to the first embodiment, the bonding area of ​​the control wiring portion 35a generated by the adhesive members 39b is increased. Furthermore, compared to the first embodiment, the control wiring portion 35a is more firmly attached to the wiring mounting area 32f of the lower main body portion 32. Therefore, if wire bonding is performed on the control IC 37 that is bonded to the control wiring portion 35a, vibration of the control wiring portion 35a that is attached to the housing 30 can be suppressed, thereby improving the bonding strength of the bonding wires to the control IC 37. As a result, the occurrence of electrical defects in the semiconductor device 10 can be reduced, and the decrease in the reliability of the semiconductor device 10 can be suppressed.

[0067] Alternatively, it can be like Figure 8As shown in (A), a cutout 35a7 is formed on the side opposite to the receiving opening 32a in the mounting area of ​​the control IC 37 in the control wiring section 35a. It should be noted that the cutout 35a7 in this case is trapezoidal, approximately corresponding to the length of the control IC 37. The cutout 35a7 is not limited to a trapezoid; it can also be rectangular, triangular, or semi-circular. Since the housing 30 is insert-molded by including such a lead frame 35, resin constituting the housing 30 is also poured between the cutouts 35a7 in the control wiring section 35a. Thus, the control IC 37 is mounted on the control wiring section 35a with the cutout 35a7 formed therein via the adhesive member 39b. The adhesive member 39b is inserted into the longitudinal gap 32g1 and the transverse gap 32g2 in the same manner as in the first embodiment, and as... Figure 8 As shown in (B), the adhesive component 39b is also inserted into the cutout 35a7 when viewed from above. Therefore, compared to the first embodiment, the adhesive area of ​​the control wiring portion 35a generated by the adhesive component 39b is increased. Therefore, compared to the first embodiment, the control wiring portion 35a is also more firmly attached to the wiring mounting area 32f of the lower main body portion 32. Therefore, if wire bonding is performed on the control IC 37 that is bonded to the control wiring portion 35a, vibration of the control wiring portion 35a that is attached to the housing 30 can be suppressed, thereby improving the bonding strength of the bonding wire to the control IC 37. As a result, the occurrence of electrical defects in the semiconductor device 10 can be reduced, and the decrease in the reliability of the semiconductor device 10 can be suppressed.

[0068] [Fourth Implementation Method]

[0069] In the fourth embodiment, using Figure 9 and Figure 10 This indicates that the wiring installation area 32f formed in the lower main body 32 is not formed in a stepped shape, but rather in a groove shape with only an opening on the front. Figure 9 This is a top view of the semiconductor device according to the fourth embodiment. Figure 10 This is a cross-sectional view of the main components of the semiconductor device according to the fourth embodiment. It should be noted that, in the fourth embodiment, except for the formation position of the wiring mounting region 32f, the configuration of the semiconductor device is the same as that of the semiconductor device 10 in the first embodiment.

[0070] like Figure 9 and Figure 10 As shown, the control wiring portion 35a of the lead frame 35 is mounted to the wiring mounting area 32f via an adhesive member 39b. This wiring mounting area 32f is recessed into a groove shape along one side of the receiving opening 32a on the front side of the lower main body 32 at the opening edge of the receiving opening 32a. This groove is aligned with the opening direction (…). Figure 10The mounting sides 32f1 and 32f3 (parallel in the vertical direction) and the mounting bottom surface 32f2 are parallel to each other. The wiring mounting area 32f is U-shaped in cross-section.

[0071] The control IC 37 is mounted on the wiring front side 35a4 of the control wiring section 35a of such a lead frame 35 via an adhesive component 39b. It should be noted that... Figure 9 and Figure 10 In this context, it indicates that the width of the control wiring section 35a is approximately the same as the width of the control IC 37, or the width of the control wiring section 35a is longer than the width of the control IC 37. Furthermore, since the wiring mounting area 32f is trench-shaped, gaps are generated between it and the control wiring section 35a disposed in the wiring mounting area 32f. Specifically, a longitudinal gap 32g3 is generated between the wiring side surface 35a1 of the control wiring section 35a and the mounting side surface 32f3 of the wiring mounting area 32f. A longitudinal gap 32g1 is generated between the wiring side surface 35a3 of the control wiring section 35a and the mounting side surface 32f1 of the wiring mounting area 32f. A transverse gap 32g2 is generated between the wiring back surface 35a2 of the control wiring section 35a and the mounting bottom surface 32f2 of the wiring mounting area 32f. And, as... Figure 10 As shown, the adhesive component 39b fills the longitudinal gaps 32g1 and 32g3 from the front side 35a4 of the control wiring portion 35a, and then fills the transverse gap 32g2. Therefore, the front side 35a4, side sides 35a1 and 35a3, and back side 35a2 of the control wiring portion 35a are surrounded by the adhesive component 39b. Thus, the control wiring portion 35a is strongly and firmly adhered to the wiring mounting area 32f of the lower main body portion 32. Therefore, if wire bonding is performed on the control IC 37 bonded to the control wiring portion 35a, vibration of the control wiring portion 35a, which is tightly attached to the housing 30, can be suppressed, thereby improving the bonding strength of the bonding wires to the control IC 37. This reduces the occurrence of electrical defects in the semiconductor device 10 and suppresses the decrease in the reliability of the semiconductor device 10.

[0072] The adhesive component 39b can also be introduced into the longitudinal gaps 32g1, 32g3 and the transverse gap 32g2 in the same manner as in the first embodiment. That is, the adhesive component 39b is applied to one of the engagement areas of the control IC 37 on the front side 35a4 of the control wiring portion 35a of the lead frame 35 of the housing 30 and the back side of the control IC 37. The control IC 37 is aligned with the engagement area of ​​the wiring front side 35a4. Then, the control IC 37 is pressed towards the wiring front side 35a4. As a result, the adhesive component 39b between the control IC 37 and the wiring front side 35a4 is extended and immersed into the longitudinal gaps 32g1, 32g3. Furthermore, by pressing the control IC 37, the adhesive component 39b is immersed from the longitudinal gaps 32g1, 32g3 into the transverse gap 32g2, which communicates with the longitudinal gaps 32g1, 32g3. It should be noted that in this case, the adhesive component 39b does not need to completely fill the transverse gap 32g2. Once the adhesive component 39b completes its conduction to the longitudinal gaps 32g1, 32g3, and transverse gap 32g2, the adhesive component 39b is cured. This allows the control IC 37 to be tightly attached to the lead frame 35, and the control wiring portion 35a of the lead frame 35 to be tightly attached to the wiring mounting area 32f of the lower main body portion 32. It should be noted that since the burrs 35a5 of the control wiring portion 35a also have an anchoring effect on the adhesive component 39b in this case, the control wiring portion 35a is more firmly attached to the wiring mounting area 32f.

[0073] Here, as Figure 10 Other ways of using Figure 11 This explains the case where the width of the control IC 37 is greater than the width of the control wiring section 35a when viewed from above. Figure 11 This is a cross-sectional view of the main components of the semiconductor device according to the fourth embodiment. It should be noted that... Figure 11 The width of the control wiring section 35a is narrower than Figure 10 The width of the control wiring section 35a, and other components thereof. Figure 10 The configuration is the same. Therefore, the control IC 37 must be mounted on the wiring front side 35a4 of the control wiring section 35a of the lead frame 35, spanning the longitudinal gaps 32g1 and 32g3.

[0074] When the control IC 37 is mounted on the wiring front 35a4 of the control wiring section 35a of the lead frame 35, spanning the longitudinal gaps 32g1 and 32g3 in a top view, compared to the control IC 37 spanning the longitudinal gaps 32g1 and 32g3, Figure 10 In this situation, the adhesive component 39b can be easily introduced into the longitudinal gaps 32g1 and 32g3. Therefore, with... Figure 10Similarly, the adhesive component 39b at the lower part of the control IC 37 is introduced into the longitudinal gaps 32g1, 32g3 and the transverse gap 32g2. Furthermore, by bridging the longitudinal gaps 32g1, 32g3, the upper sides of the longitudinal gaps 32g1, 32g3 are blocked by the control IC 37. Therefore, peeling between the adhesive component 39b in the longitudinal gaps 32g1, 32g3 and the lead frame 35 (control wiring portion 35a) or the housing 30 (mounting area 32f of the lower main body portion 32) can be suppressed. As a result, the control wiring portion 35a of the lead frame 35 is more firmly attached to the wiring mounting area 32f of the lower main body portion 32. Therefore, if wire bonding is performed on the control IC 37 bonded to the control wiring portion 35a, vibration of the control wiring portion 35a attached to the housing 30 can be suppressed, improving the bonding strength of the bonding wire to the control IC 37. Therefore, the occurrence of electrical defects in the semiconductor device 10 can be reduced, thereby suppressing the decrease in the reliability of the semiconductor device 10. It should be noted that, since the burrs 35a5 of the control wiring portion 35a also have an anchoring effect on the adhesive component 39b in this case, the control wiring portion 35a is more firmly attached to the wiring mounting area 32f.

[0075] Furthermore, as Figure 10 Other ways of using Figure 12 This describes the situation where the control IC 37 is mounted on one side of the control wiring section 35a when viewed from above. Figure 12 This is a cross-sectional view of the main components of the semiconductor device according to the fourth embodiment. It should be noted that, except for the control IC 37 which is mounted on one side of the control wiring section 35a, Figure 12 and Figure 10 same.

[0076] When the control IC 37 is mounted on the wiring front side 35a4 of the control wiring section 35a of the lead frame 35, spanning the longitudinal gap 32g3 in a top view, compared to the control IC 37 spanning the longitudinal gap 32g3, Figure 10 In this situation, the bonded component 39b can be easily introduced into the longitudinal gap 32g3. Therefore, with... Figure 10Similarly, the adhesive component 39b at the lower part of the control IC 37 is introduced into the longitudinal gap 32g3 and the transverse gap 32g2. Furthermore, by the control IC 37 crossing the longitudinal gap 32g3, the upper side of the longitudinal gap 32g3 is blocked by the control IC 37. Therefore, peeling between the adhesive component 39b in the longitudinal gap 32g3 and the lead frame 35 (control wiring portion 35a) or the housing 30 (mounting area 32f of the lower main body portion 32) can be suppressed. If the control IC 37 is pressed further toward the control wiring portion 35a, the adhesive component 39b is introduced from the transverse gap 32g2 into the longitudinal gap 32g1. At this time, the adhesive component 39b does not need to fill the entire longitudinal gap 32g1. Preferably, the adhesive component 39b fills more than half of the longitudinal gap 32g1 from the mounting bottom surface 32f2. As a result, the control wiring portion 35a of the lead frame 35 is in close contact with the wiring mounting area 32f of the lower main body portion 32. Therefore, if the control IC 37, which is bonded to the control wiring section 35a, is wire-bonded, vibration of the control wiring section 35a, which is in close contact with the housing 30, can be suppressed, thereby improving the bonding strength of the bonding wires to the control IC 37. This reduces the occurrence of electrical defects in the semiconductor device 10 and suppresses the decrease in the reliability of the semiconductor device 10. It should be noted that the description here refers to the case where the control IC 37 is mounted against the longitudinal gap 32g3 side, which is one side of the control wiring section 35a. The same applies when the control IC 37 is mounted against the longitudinal gap 32g1 side of the control wiring section 35a.

Claims

1. A semiconductor device, characterized in that, have: Semiconductor components; A wiring component extends in one direction and, when viewed in a cross-section orthogonal to the direction of extension, has a wiring front side, a wiring back side, and a first wiring side side and a second wiring side side disposed between the wiring front side and the wiring back side. A housing having an opening on the front for receiving the semiconductor element, and a wiring component mounted in a wiring mounting area via an adhesive component. The front surface and the wiring front surface of the wiring component are substantially flush. The wiring mounting area is recessed along one side of the opening edge on the front surface. An electronic component, which is bonded to the wiring front side of the wiring component by the adhesive component. The adhesive component extends continuously from the front side of the wiring to the first gap between the first side of the wiring and the wiring mounting area, and to the second gap between the second side of the wiring and the wiring mounting area. The wiring width of the wiring component in the direction orthogonal to the extension direction is shorter than the component width of the electronic component in the direction orthogonal to the extension direction. The electronic component, when viewed from above, spans the first gap and the second gap and is joined by the adhesive component.

2. The semiconductor device according to claim 1, characterized in that, The adhesive component reaches a third gap through the first gap, which communicates with the first gap and is located between the back side of the wiring and the wiring mounting area.

3. The semiconductor device according to claim 1, characterized in that, The electronic component is joined in such a manner that the first gap is located between the side of the electronic component opposite to the opening and the centerline of the electronic component parallel to the side.

4. The semiconductor device according to claim 1, characterized in that, On the front side of the wiring component, a cutout is formed on the side opposite to the opening in the mating area where the electronic component is joined.

5. The semiconductor device according to claim 1, characterized in that, The wiring component generates burrs along the first and second wiring sides on the front side of the wiring, and generates collapsed edges along the first and second wiring sides on the back side of the wiring.

6. The semiconductor device according to claim 1, characterized in that, The wiring component generates a collapsed edge along the first wiring side and the second wiring side on the front side of the wiring, and generates burrs along the first wiring side and the second wiring side on the back side of the wiring.

7. The semiconductor device according to claim 1, characterized in that, The wiring installation area is formed by a groove recessed on the front side. The first wiring side, the back of the wiring component, and the second wiring side, which are opposite to the wiring mounting area, are mounted to the wiring mounting area by the adhesive component.

8. The semiconductor device according to claim 7, characterized in that, The adhesive component extends from the front side of the wiring through at least one of the first gap and the second gap to a third gap that communicates with the first gap and the second gap and is located between the back side of the wiring and the wiring mounting area.

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