Substrate processing apparatus, method of manufacturing semiconductor device, and storage medium

Abstract

The present application provides a substrate processing apparatus, a method of manufacturing a semiconductor device, and a storage medium, which can clean the structure around the substrate placement surface in an apparatus that processes a substrate while the substrate is orbiting. The substrate processing apparatus is configured to have: a processing chamber that processes a substrate; a substrate placement plate that has a non-substrate placement surface and a plurality of substrate placement surfaces; a rotation section that rotates the substrate placement plate; a plasma generation section that is configured to have a higher plasma density on the non-substrate placement surface than on the substrate placement surfaces; a processing gas supply section that supplies a processing gas to the processing chamber; a cleaning gas supply section that supplies a cleaning gas to the processing chamber; and a heater that is disposed below the substrate placement plate.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a substrate processing apparatus, a manufacturing method of a semiconductor device, and a storage medium. BACKGROUND

[0002] There is an apparatus that supplies a gas while rotating a substrate in order to improve both throughput and processing quality. The technology of such an apparatus is described in, for example, Patent Literature 1.

[0003] In this apparatus, each substrate is supported by a substrate placement surface provided on a plate-shaped substrate placement plate. A plurality of substrate placement surfaces are provided in a circumferential shape.

[0004] When processing a substrate, a gas is supplied toward the substrate placement plate while rotating the substrate placement plate. The supplied gas is supplied to the substrate on the substrate placement surface and forms a film on the substrate. SUMMARY

[0005] PROBLEMS TO BE SOLVED BY THE INVENTION

[0006] When a gas is supplied toward the substrate placement plate, the gas is supplied not only to the substrate but also to the structure around it. The structure around it refers to, for example, the portion between the substrate placement surfaces in the substrate placement plate.

[0007] Since the gas is also supplied to the structure around it, a film is formed as with the substrate. However, the film formed on the structure around it is peeled off to generate particles that adhere to the substrate. Since the particles cause the quality of the film formed on the substrate to decrease, it is desirable to prevent the film deposited on the structure around it from generating particles.

[0008] Therefore, an object of the present disclosure is to provide technology that enables cleaning of the structure around the substrate placement surface in an apparatus that rotates a substrate and processes it.

[0009] Patent Literature 1: Japanese Patent Application Publication No. 2016-42561

[0010] MEANS FOR SOLVING THE PROBLEMS

[0011] According to one embodiment of the present disclosure, there is provided a structure including: a processing chamber that processes a substrate; a substrate placement plate that has a non-substrate placement surface and a plurality of substrate placement surfaces; a rotation section that rotates the substrate placement plate; a plasma generation section that is configured to have a higher plasma density on the non-substrate placement surface than on the substrate placement surfaces; a processing gas supply section that supplies a processing gas to the processing chamber; a cleaning gas supply section that supplies a cleaning gas to the processing chamber; and a heater that is disposed below the substrate placement plate.

[0012] Effects of the Invention

[0013] With this technique, a technique capable of cleaning the structure around the substrate placement surface can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 is a diagram for explaining the substrate processing apparatus of the first mode.

[0015] Figure 2 is a diagram for explaining the substrate processing apparatus of the first mode.

[0016] Figure 3 is a diagram for explaining the gas supply portion of the first mode.

[0017] Figure 4 is a diagram for explaining the relationship between the substrate placement plate and the notch plate of the first mode.

[0018] Figure 5 is a diagram for explaining the gas supply structure of the first mode.

[0019] Figure 6 is a diagram for explaining the controller of the substrate processing apparatus of the first mode.

[0020] Figure 7 is a diagram for explaining the substrate processing flow of the first mode.

[0021] Figure 8 is a diagram for explaining the substrate processing apparatus of the second mode.

[0022] Figure 9 is a diagram for explaining the relationship between the substrate placement plate and the notch plate of the second mode.

[0023] Figure 10 is a diagram for explaining the relationship between the substrate placement plate, the notch plate, and the moving plate of the second mode.

[0024] Figure 11 is a diagram for explaining the substrate processing apparatus of the third mode.

[0025] Figure 12 is a diagram for explaining the relationship between the substrate placement plate and the notch plate of the third mode. DETAILED DESCRIPTION

[0026] (First Mode)

[0027] The first mode will be described with reference to the drawings.

[0028] Mainly with reference to Figure 1 , Figure 2 , Figure 3The structure of the substrate processing apparatus of the present embodiment will be described. Figure 1 is a cross-sectional view of the substrate processing apparatus 200 of the present embodiment as viewed from above. Figure 2 is a longitudinal cross-sectional view of the substrate processing apparatus 200 of the present embodiment, and is Figure 1 is a cross-sectional view of the chamber taken along the α-α' line. Further, the α-α' line is a line passing through the center of the chamber 302 from α toward α'. Figure 3 is an explanatory view for explaining the substrate support mechanism.

[0029] The detailed structure of the substrate processing apparatus 200 will be described. The substrate processing apparatus 200 is controlled by a controller 400 to be described later.

[0030] As shown in Figs. 1 and 2, the substrate processing apparatus 200 is mainly composed of a cylindrical airtight container, i.e., a chamber 302. Within the chamber 302, a processing chamber 301 for processing a substrate 100 is formed. A gate valve 305 is connected to the chamber 302, and the substrate 100 is carried in and out via the gate valve 305. Figure 1 Figure 2 The processing chamber 301 has processing regions 306 for supplying processing gas and purge regions 307 for supplying purge gas. Here, the processing regions 306 and the purge regions 307 are alternately arranged in a circumferential direction. For example, a first processing region 306a, a first purge region 307a, a second processing region 306b, and a second purge region 307b are arranged in this order. As will be described later, a first gas can be supplied to the first processing region 306a, a second gas can be supplied to the second processing region 306b, and an inert gas can be supplied to the first and second purge regions 307a and 307b. Thus, the substrate 100 can be subjected to predetermined processing in correspondence with the gases supplied to the respective regions.

[0031] The purge regions 307 are regions for spatially dividing the first and second processing regions 306a and 306b. The top portions 308 of the purge regions 307 are formed lower than the top portions 309 of the processing regions 306. The top portion 308a is provided in the first purge region 307a, and the top portion 308b is provided in the second purge region 307b. By lowering the top portions, the space pressure of the purge regions 307 is increased. By supplying purge gas to the space, the adjacent processing regions 306 are divided. Further, the purge gas also has a function of removing excess gas on the substrate 100.

[0032] The purge regions 307 are regions for spatially dividing the first and second processing regions 306a and 306b. The top portions 308 of the purge regions 307 are formed lower than the top portions 309 of the processing regions 306. The top portion 308a is provided in the first purge region 307a, and the top portion 308b is provided in the second purge region 307b. By lowering the top portions, the space pressure of the purge regions 307 is increased. By supplying purge gas to the space, the adjacent processing regions 306 are divided. Further, the purge gas also has a function of removing excess gas on the substrate 100.

[0033] ​At the center of chamber 302, a rotating shaft is provided, and a substrate mounting plate 317 configured to rotate freely is disposed thereon. The substrate mounting plate 317 has heat-permeable properties, allowing heat emitted from the heater 380 (described later) to pass through. The transmitted heat heats the substrate 100. The substrate mounting plate 317 is, for example, made of quartz.

[0034] The substrate mounting plate 317 is configured such that multiple (e.g., 5) substrates 100 can be arranged on the same surface and in the same circumferential shape along the rotation direction within the chamber 302.

[0035] The surface of the substrate mounting plate 317 is composed of a substrate mounting surface 311 and a non-substrate mounting surface 325. The substrate 100 is mounted on the substrate mounting surface 311. The substrate mounting surfaces 311 are arranged concentrically at equal intervals (e.g., 72° intervals) from the center of the substrate mounting plate 317. Furthermore, in... Figure 1 For ease of explanation, illustrations have been omitted.

[0036] A substrate mounting surface 311 is provided on the bottom surface of the recess 312. Each recess 312 is, for example, circular when viewed from the upper surface of the substrate mounting plate 317 and concave when viewed from the side. The diameter of the recess 312 is preferably configured to be slightly larger than the diameter of the substrate 100. By mounting the substrate 100 in the recess 312, the substrate 100 can be mounted on the substrate mounting surface 311.

[0037] The surface of the substrate mounting plate 317 other than the substrate mounting surface 311 is referred to as the non-substrate mounting surface 325. The non-substrate mounting surface 325 is the surface on which the substrate 100 is not mounted, for example, the surface between the plurality of recesses 312, the surface on the center side of the cavity 302 as viewed from the recesses 312, and the area on the outer periphery side of the cavity 302 as viewed from the recesses 312.

[0038] Each recess 312 is provided with a plurality of through holes 317a through which the pins 320 pass. A portion below the substrate mounting plate 317 and facing the gate valve 305 is provided with... Figure 3 The substrate holding mechanism 316 is shown. The substrate holding mechanism 316 has a plurality of pins 320 that lift and support the back side of the substrate 100 when it is being moved in or out. The pins 320 are configured to be extendable, for example, retractable into the main body of the substrate holding mechanism 316. When transferring the substrate 100, the pins 320 extend and hold the substrate 100. Thereafter, the tips of the pins 320 move downwards, thereby placing the substrate 100 in the recess 312. The substrate holding mechanism 316 only needs to be configured such that the pins 320 can be inserted into the holes 317a during substrate placement.

[0039] The substrate placement plate 317 is fixed to the core 321. The core 321 is provided at the center of the substrate placement plate 317 and has a function of fixing the substrate placement plate 317. The main shaft 322 is disposed below the core 321. The main shaft 322 supports the core 321.

[0040] The main shaft 322 penetrates the hole 323 provided in the bottom of the vessel 302 and is covered by the airtight bellows 304 outside the chamber 302. In addition, the rotation portion 319 is provided at the lower end of the main shaft 322. Further, in the case where the main shaft 322 also has a function of elevating the main shaft 322, it can also be referred to as an elevating rotation portion. The rotation portion 319 is configured to be able to rotate the substrate placement plate 317 in accordance with an instruction from the controller 400.

[0041] The heater unit 381 in which the heater 380 as a heating portion is built-in is disposed below the substrate placement plate 317. The heater 380 heats each substrate 100 placed on the substrate placement plate 317. The heater 380 is disposed in a circumferential shape along the shape of the chamber 302.

[0042] The heater control portion 387 is connected to the heater 380. The heater 380 is electrically connected to the controller 400, and controls the power supply to the heater 380 and performs temperature control in accordance with an instruction from the controller 400.

[0043] The exhaust structure 386 is disposed at the outer periphery of the substrate placement plate 317. The exhaust structure 386 has an exhaust groove 388 and an exhaust buffer space 389. The exhaust groove 388 and the exhaust buffer space 389 are configured in a circumferential shape along the shape of the chamber 302.

[0044] The exhaust hole 392 is provided at the bottom of the exhaust structure 386. The exhaust hole 392 exhausts the gas supplied into the processing vessel 304. Each gas is exhausted from the exhaust hole 392 via the exhaust groove 388 and the exhaust buffer space 389.

[0045] Next, the plasma generation portion 350 will be described. The plasma generation portion 350 is provided at a portion facing the gate valve 305 in the upper region of the processing region 306b.

[0046] The vessel 351 constituting the plasma generation portion 350 is provided on the top portion 309. The dielectric plate 352 is provided between the vessel 351 and the substrate placement plate 317. A hole is provided in the upper wall of the chamber 302, and the dielectric plate 352 is configured to be able to close the hole. The dielectric plate 352 is supported by a portion of the upper wall, i.e., the flange-shaped support portion 309a. The support portion 309a is configured in a circumferential shape.

[0047] A notch plate 356 is provided above the dielectric plate 352. The notch plate 356 is provided with a plurality of emission holes 339 described later. The emission holes 339 are configured to have different total hole areas in the respective regions described later. The respective regions will be described later.

[0048] A space 355 is provided between the upper surface of the notch plate 356 and the inner wall in the container 351. A waveguide 358 is connected to the container 351. The waveguide 358 is connected to a microwave supply part 357, and microwaves generated from the microwave supply part 357 are supplied to the space 355 via the waveguide 358.

[0049] A nozzle 346 is provided in the chamber 302 in a manner capable of supplying a gas to the lower side of the dielectric plate 352. A cleaning gas is supplied from the nozzle 346. A circumferential supply hole 346a is provided at the front end of the nozzle 346 in a shape following the flange 309a.

[0050] The cleaning gas passing through the nozzle 346a is supplied from the supply hole 346a toward the lower side of the dielectric plate 352.

[0051] Next, the reason for arranging the plasma generation part 350 in a position adjacent to the gate valve 305 will be described. As described later, the substrate 100 is carried in via the gate valve 305. At this time, since the lift pin 320 is lifted, the top of the region adjacent to the gate valve 305 needs to be higher than the top of the other regions.

[0052] In addition, the plasma generation part 350 generates plasma of a cleaning gas, and needs to have an energy level that does not etch the substrate placement surface 311 as described later. Therefore, in the present embodiment, the plasma generation part is arranged in the region adjacent to the gate valve where the top is higher, and the dielectric plate 352 is spaced apart from the substrate placement surface 311 by a distance to deactivate the substrate placement surface 311 from being etched by the plasma.

[0053] Next, the configuration of the chamber 302 will be described with reference to Figure 4 The notch plate 356 will be described. Figure 4 is an explanatory view for explaining the relationship between the substrate placement plate 317 and the notch plate 356. The line 317b is a boundary line between the region 356c and the region 356m described later, and the line 317b extends in a circumferential shape. The line 317c is a boundary line between the region 356e and the region 356m described later, and the line 317c extends in a circumferential shape.

[0054] The symbol 318 is used to indicate the regions on the substrate mounting plate 317. The region on the non-substrate mounting surface 325 on the center side of the processing container 302 from the line 317a is referred to as the center region 318c, and the region on the outer peripheral side of the processing container 302 from the line 317c is referred to as the edge region 318e. In addition, the region between the line 317b and the line 317c is referred to as the intermediate region 318m.

[0055] The above regions are expressed in the following manner if considered with the substrate mounting surface 311 as a reference. The center region 318c is a region on the center side as viewed from the substrate mounting surface 311, and the edge region 318e is a region including from the substrate mounting surface 311 to the edge of the substrate mounting plate. In addition, the intermediate region 318m is located on the outer peripheral side with respect to the center region 318c, and on the center side with respect to the edge region 318e.

[0056] The notch plate 356 has, for example, three regions from the center side to the outer peripheral side of the chamber 302. Each region is arranged from the center of the chamber 302 as shown in Figure 4 The region 356c, the region 356m, and the region 356e are arranged as shown in the drawing from the center of the chamber 302. The radial length of the region 356m is equivalent to the diameter of the substrate mounting surface 311.

[0057] The region 356c is arranged on the center side of the chamber 302 as viewed from the region 356m. That is, the region 356c is arranged on the center side in the horizontal direction with respect to the upper side of the substrate mounting surface 311, and on a part of the region 318c.

[0058] The region 356e is arranged on the outer peripheral side of the chamber 302 as viewed from the region 356m. That is, the region 356e is arranged on the outer peripheral side in the horizontal direction with respect to the upper side of the substrate mounting surface 311, and on a part of the region 318e.

[0059] A plurality of emission holes 339 are arranged in each region 336. The opening area per unit area of the emission holes 339 in each region is configured so that the opening area per unit area in the region 356m < the opening area per unit area in the region 356c, and the opening area per unit area in the region 356m < the opening area per unit area in the region 356e. That is, the opening area per unit area of the emission holes 339 is configured so that the opening area per unit area in the center region 356c is larger than in the intermediate region, or the opening area per unit area in the edge region 356e is larger than in the intermediate region.

[0060] Microwaves generated from the microwave supply unit 357 are supplied to the dielectric plate 352 via the waveguide 358, the space 355, and the emission holes 339, and further to the lower side of the dielectric plate 352.

[0061] In parallel with the supply of microwaves, a cleaning gas is supplied from the nozzle 346 to the lower side of the dielectric plate 352. The cleaning gas is activated by the microwaves to become a plasma state.

[0062] The plasma of the cleaning gas is proportional to the amount of the irradiated microwaves, and thus corresponds to the opening area of the radiation hole 339 in each region. Therefore, in terms of the amount of the plasma, in the region 356m < in the region 356c < in the region 356e.

[0063] Next, the Figure 5 The gas supply portion will be described.

[0064] The nozzle 341, the nozzle 342, the nozzle 344, the nozzle 345, and the nozzle 346 are provided in the chamber 302. Figure 1 A of (a) is connected to A of the gas supply portion. That is, the nozzle 341 is connected to the supply pipe 241. Figure 5 B of (b) is connected to B of the gas supply portion. That is, the nozzle 342 is connected to the supply pipe 251. Figure 1 C of (c) is connected to C of the gas supply portion. That is, the nozzle 344 and the nozzle 345 are connected to the supply pipe 261, respectively. Figure 5 D of (d) is connected to D of the gas supply portion. That is, the nozzle 346 is connected to the supply pipe 271. Figure 1 D of (d) is connected to D of the gas supply portion. That is, the nozzle 346 is connected to the supply pipe 271. Figure 5 D of (d) is connected to D of the gas supply portion. That is, the nozzle 346 is connected to the supply pipe 271. Figure 2 D of (d) is connected to D of the gas supply portion. That is, the nozzle 346 is connected to the supply pipe 271. Figure 5

[0065] (a) of the gas supply portion indicates a part of the gas supply portion, that is, the first gas supply portion 240. Reference will be made to Figure 5 (a) of the gas supply portion will be described in detail. The first gas is mainly supplied from the first gas supply pipe 241. Figure 5 The first gas supply source 242, the MFC 243 as a flow controller (flow control portion), and the valve 244 as an on-off valve are provided in this order from the upstream direction on the first gas supply pipe 241.

[0066] The gas containing the first element (hereinafter referred to as "first gas") is supplied from the first gas supply pipe 241 to the nozzle 341 via the MFC 243, the valve 244, and the first gas supply pipe 241.

[0067] The first gas is one of the raw material gases, that is, one of the processing gases. Here, the first element is, for example, silicon (Si). That is, the first gas is a Si gas (also referred to as Si-containing gas), and is a gas in which Si is a main component. Specifically, a dichlorosilane (DCS, SiH2Cl2) gas can be used.

[0068] The first gas supply portion 240 is mainly composed of the first gas supply pipe 241, the MFC 243, the valve 244, and the gas supply structure 410. Further, it can be considered that the first gas supply source 242 is included in the first gas supply portion 240.

[0069]

[0070] ​Next, (b) will be described with reference to a part of the gas supply section, i.e., the second gas supply section 250. Figure 5

[0071] The second gas supply source 252, the MFC 253 as a flow controller, and the valve 254 are sequentially arranged on the second gas supply pipe 251 from the upstream direction.

[0072] Further, a reaction gas that reacts with the first gas is supplied from the second gas supply pipe 251 into the shower head 230. The reaction gas is also referred to as a second gas. The second gas is one of the processing gases, and is, for example, a nitrogen-containing gas in which nitrogen is a main component. As the nitrogen-containing gas, for example, ammonia (NH3) can be used.

[0073] The second gas supply section 250 is mainly composed of the second gas supply pipe 251, the MFC 253, the valve 254, and the nozzle 342. Further, the second gas supply section 250 is a structure for supplying a reaction gas, and is also referred to as a reaction gas supply section. Further, the second gas supply source 252 can be included in the second gas supply section 250.

[0074] Next, (c) will be described with reference to a part of the gas supply section, i.e., the purge gas supply section 260. The purge gas supply section 260 is mainly composed of the purge gas supply pipe 261, the MFC 263 as a flow controller (flow control section), and the valve 264. Figure 5

[0075] The purge gas supply source 262, the MFC 263 as a flow controller (flow control section), and the valve 264 are sequentially arranged on the purge gas supply pipe 261 from the upstream direction.

[0076] Further, a purge gas can be supplied from the purge gas supply pipe 261 into the shower head 230. The purge gas is a gas that does not react with the first gas and the second gas, and is one of the purge gases for purging the ambient gas in the processing chamber 301, and is, for example, nitrogen (N2).

[0077] The purge gas supply section 260 is mainly composed of the purge gas supply pipe 261, the MFC 263, the valve 264, the nozzle 344, and the nozzle 345. The purge gas supply source 262 can be included in the purge gas supply section 260.

[0078] The first gas supply section 240 and the second gas supply section 250 are collectively referred to as a processing gas supply section. The purge gas supply section 260 can be included in the processing gas supply section.

[0079] Next, (d) will be described with reference to a part of the gas supply section, i.e., the third gas supply section 270. The third gas supply section 270 is mainly composed of the third gas supply pipe 271, the MFC 273 as a flow controller, and the valve 274. Figure 5 Next, (d) will be described with reference to a part of the gas supply section, i.e., the third gas supply section 270. The third gas supply section 270 is mainly composed of the third gas supply pipe 271, the MFC 273 as a flow controller, and the valve 274.​​

[0080] Further, a cleaning gas for removing a film formed on the substrate placing plate 217 is supplied from the third gas supply pipe 271. As the cleaning gas, for example, nitrogen trifluoride gas (NF3) or fluorine gas (F2) is used.

[0081] The third gas supply section 270 is mainly composed of the third gas supply pipe 271, the MFC 273, the valve 274, and the nozzle 346. Further, the third gas supply section 270 is a structure for supplying a cleaning gas, and is also called a cleaning gas supply section. Further, the third gas supply source 272 can be included in the third gas supply section 270.

[0082] Next, the exhaust section is described.

[0083] The exhaust hole 392 is provided below the chamber 302. The exhaust hole 392 is provided in each of the processing regions 306. The exhaust hole 392a is provided corresponding to the first processing region 306a, and the exhaust hole 392b is provided corresponding to the second processing region 306b.

[0084] A part of the exhaust section 334, that is, an exhaust pipe 334a is provided in a manner communicating with the exhaust hole 392a. The vacuum pump 334b as a vacuum exhaust device is connected to the exhaust pipe 334a via the valve 334d as an on-off valve and the APC (Auto Pressure Controller) valve 334c as a pressure regulator (pressure regulating section), and is configured to be able to perform vacuum exhaust in a manner such that the pressure in the processing chamber 301 becomes a predetermined pressure (degree of vacuum).

[0085] The exhaust hole 392b is also connected to the exhaust section 334 in a manner communicating with the exhaust hole 392a. The exhaust pipe 334a, the valve 334d, and the APC valve 334c are collectively called the exhaust section 334. Further, the vacuum pump 334b can be included in the first exhaust section 334.

[0086] Next, the controller 400 is described. Figure 6 The controller 400 is described.

[0087] The substrate processing apparatus 200 has a microwave supply section, a lift-rotation section, a valve, an MFC, and the like, and a controller 400 that controls the operation of each section. The controller 400 has at least an arithmetic section (CPU) 401, a temporary storage section 402, a storage section 403, and a transceiver section 404. The controller 400 is connected to each structure of the substrate processing apparatus 200 via the transceiver section 404, and reads out a program or a prescription from the storage section 403 according to an instruction from a higher-level controller or a user, and controls the operation of each structure according to the content thereof. Further, the controller 400 can be constituted by a dedicated computer, or can be constituted by a general-purpose computer. For example, an external storage device (e.g., a magnetic tape, a disk such as a floppy® disk or a hard disk, an optical disk such as a CD or a DVD, an optical-magnetic disk such as an MO, a semiconductor memory such as a USB memory (USB flash) or a memory card) 412 that stores the above-described program is prepared, and the program is installed to a general-purpose computer using the external storage device 412, whereby the controller 400 of the present mode can be constituted. In addition, the means for supplying the program to the computer is not limited to the case where the program is supplied via the external storage device 412. For example, the program can be supplied without passing through the external storage device 412 by receiving information from the higher-level device 420 via the transceiver section 411 using a communication means such as the Internet or a dedicated line. In addition, the controller 400 can be instructed using an input-output device 413 such as a keyboard or a touch panel.

[0088] Further, the storage section 402 or the external storage device 412 is constituted by a storage medium that is readable by a computer. Hereinafter, these will be simply referred to as storage media. Further, the meaning of the term "storage medium" in the present specification includes only the storage section 402 alone, only the external storage device 412 alone, or both.

[0089] (Substrate processing sequence)

[0090] Next, the substrate processing sequence will be described with reference to Figure 7 The substrate processing sequence will be described. Figure 7 is a flowchart that shows the substrate processing sequence of the present mode. In the following description, the operation of each section that constitutes the substrate processing apparatus 200 is controlled by the controller 400.

[0091] Here, an example will be described in which a silicon nitride (SiN) film is formed as a thin film on the substrate 100 using a silicon-containing gas as the first gas and ammonia gas as the second gas.

[0092] The substrate carrying-in / placing sequence will be described with reference to Figure 7The substrate placement plate 317 is rotated and the recess 312 is moved to a position adjacent to the gate valve 305. Next, the lift pins 320 are raised and pass through the through holes 317a of the substrate placement plate 317. Next, the gate valve 305 is opened to communicate the chamber 302 with a vacuum transfer chamber (not shown). Then, the substrate 100 is transferred from the transfer chamber to the lift pins 320 by a wafer transfer robot (not shown), and then the lift pins 320 are lowered. Thus, the substrate 100 is supported on the substrate placement surface 311.

[0093] When the substrate 100 is placed on the substrate placement surface 311, the substrate placement plate 317 is rotated so that the substrate placement surface 311 on which the substrate 100 is not placed faces the gate valve 305. Then, a substrate is placed on the substrate placement surface 311 as well. The above operation is repeated until the substrates 100 are placed on all the substrate placement surfaces 311.

[0094] When the substrate 100 is placed on the substrate placement plate 317, the heater 380 is supplied with power in advance and controlled so that the surface of the substrate 100 becomes a predetermined temperature. The temperature of the substrate 100 is, for example, 400°C or higher and 500°C or lower. The heat radiated from the heater 380 is radiated to the back surface of the substrate 100 via the substrate placement plate 317. The heater 380 is always in an energized state at least during a period from the substrate carrying-in / placement process to the end of the substrate carrying-out process described later.

[0095] The substrate placement plate rotation start process S110 will be described. When the substrates 100 are placed in the respective recesses 312, the rotation section 324 rotates the substrate placement plate 317 in the R direction. By rotating the substrate placement plate 317, the substrates 100 are moved in the order of the first processing region 306a, the first purge region 307a, the second processing region 306b, and the second purge region 307b.

[0096] The gas supply start process S120 will be described. After the substrate 100 is heated to a desired temperature and the substrate placement plate 317 reaches a desired rotation speed, the valve 244 is opened to start the supply of the silicon-containing gas into the first processing region 306a. In parallel with this, the valve 254 is opened to supply the NH3gas into the second processing region 306b.

[0097] At this time, the MFC 243 is adjusted so that the flow rate of the silicon-containing gas becomes a predetermined flow rate. The supply flow rate of the silicon-containing gas is, for example, 50 seem or higher and 500 seem or lower.

[0098] In addition, the MFC 253 is adjusted so that the flow rate of the NH3gas becomes a predetermined flow rate. The supply flow rate of the NH3gas is, for example, 100 seem or higher and 5000 seem or lower.

[0099] Further, after the substrate loading / setting process, the inside of the processing chamber 301 is exhausted by the first exhaust section 33, and N2 gas as purge gas is supplied from the inert gas supply section 260 to the first purge area 307a and the second purge area 307b.

[0100] The film formation process S130 will be described. In the film formation process S130, a silicon-containing layer is formed in the first processing area 306a of each substrate 100, and further, in the second processing area 306b after rotation, the silicon-containing layer reacts with NH3 gas to form a silicon-containing film on the substrate 100. The substrate setting plate 317 is rotated a predetermined number of times to achieve a desired film thickness. At this time, since gas is also supplied to the non-substrate setting surface 325, a film is also formed on the non-substrate setting surface 325.

[0101] The gas supply stop process S140 will be described. After the substrate setting plate 317 is rotated a predetermined number of times, the valves 244, 254 are closed, and the supply of the silicon-containing gas to the first processing area 306a and the supply of the NH3 gas to the second processing area 306b are stopped.

[0102] The substrate setting plate rotation stop process S150 will be described. After the gas supply stop process S140, the rotation of the substrate setting plate 317 is stopped.

[0103] The substrate unloading process will be described. In the substrate unloading process, the substrate 100 is moved to the position adjacent to the gate valve 305, and the substrate 100 is unloaded. Figure 7 The illustration is omitted in the substrate unloading process.

[0104] The substrate setting plate 317 is rotated to move the substrate 100 to be unloaded to the position adjacent to the gate valve 305. After that, the substrate is unloaded in the reverse method to the substrate loading. These operations are repeated to unload all the substrates 100.

[0105] Next, the cleaning process will be described. The cleaning process is one process in the substrate processing process. The cleaning process is performed in the state where the substrate 100 is not present in the substrate processing apparatus 200. Therefore, the substrate 100 is not set on the substrate setting surface 311.

[0106] If the film formed on the surface of the non-substrate setting surface 325 by the film formation process S130 is peeled off to generate particles, it is possible to cause adverse effects on the substrate 100. For example, in the case where the peeled film is attached to the substrate 100, the resistance value of the device formed on the substrate 100 is changed, and the like, and the quality is reduced.

[0107] Therefore, it is considered that the surface of the non-substrate setting surface 325 is cleaned in this process, and the peeling of the film formed on the surface of the non-substrate setting surface 325 is suppressed. In the cleaning process, the cleaning is performed using a cleaning gas in a plasma state as described later.

[0108] The comparative example is explained here. The comparative example is an example in which the non-substrate placement surface 325 and the substrate placement surface 311 are cleaned while the cleaning process is performed. The cleaning process is performed as described above in a state in which the substrate 100 is not present, i.e., in a state in which the substrate placement surface 311 is exposed. Therefore, the cleaning gas in the plasma state is irradiated on the substrate placement surface 311.

[0109] The cleaning gas in the plasma state etches the substrate placement surface 311, and in this case, the refractive index of the heat radiated from the heater 380 changes. When the refractive index changes, then the heat radiated to the entire back surface of the substrate 100 changes compared to before the etching. For example, the portion in which the refractive index differs does not easily transmit the heat compared to before the etching, or abnormality such as reflection occurs, so it is not possible to uniformly heat the substrate 100.

[0110] Here, the etching of the substrate placement surface 311 is suppressed by the present method and the non-substrate placement surface is cleaned. The specific method is explained below.

[0111] After the substrate 100 is carried out of the substrate processing chamber 200, the gate valve 305 is closed. Thereafter, the microwave supply section 357 generates microwaves. In parallel with this, the cleaning gas is supplied from the nozzle 346 to below the dielectric plate 352. The supplied cleaning gas is generated below the dielectric plate 352. The cleaning gas is in the plasma state.

[0112] Since the opening area of the region 356m < the opening area of the region 356c, then in terms of the plasma density of each region, it is generated that it is higher in the region 356c than in the region 356m. Also, since the opening area of the region 356m < the opening area of the region 356e, then in terms of the plasma density of each region, it is generated that it is higher in the region 356e than in the region 356m.

[0113] The reason for generating the plasma in this density relationship is explained next. As described above, during the film formation process S130, the substrate 100 is placed on the substrate placement surface 311. Therefore, the substrate placement surface 311 is not easily exposed to the gas, so it is not easily formed into a film.

[0114] On the other hand, the non-substrate placement surface 325 is exposed to the gas and formed into a film. That is, in terms of the film formed, it is thicker on the non-substrate placement surface 325 than on the substrate placement surface 311.

[0115] In the case where plasma of the same density is generated in the regions 356c, 356m, and 356e in this state, the following problems arise. One of them is that the plasma etches the substrate placement surface 311. For example, in the case where a stronger plasma is used in order to remove the film on the center side of the processing chamber 202 in the non-substrate placement surface 325 in the early stage, the substrate placement surface 311 passing below the region 356m is also exposed to the stronger plasma. Therefore, there is a risk that the substrate placement surface 311 is etched by the stronger plasma. In the case where etching is performed, the heat transmittance of the substrate placement surface 311 changes and heating cannot be performed uniformly.

[0116] Another problem is that, in the case where a plasma of a strength that does not etch the substrate placement surface 311 is used, a longer time is required to remove the film on the center side and the outer peripheral side of the non-substrate placement surface 325, which leads to a long downtime.

[0117] Because of this problem, the plasma density is reduced on the region 318m compared to the other regions. In order to achieve this, the opening area of the region 356m is made < the opening area of the region 356c. Also, the opening area of the region 356m is made < the opening area of the region 356e.

[0118] Thus, the substrate placement surface 311 can be etched and the surface of the non-substrate placement surface 325 can be cleaned in a short time.

[0119] When the plasma is generated, the rotation of the substrate placement plate 317 is started. The substrate placement surface 311 continues to rotate during the period when it passes below the region 356m. During the rotation, the film on the non-substrate placement surface 325 below the region 356c and the region 356e is cleaned. Although the substrate placement surface 311 is exposed to the plasma of the cleaning gas, the plasma does not remain on the substrate placement surface 311 because of the rotation of the substrate placement plate 317.

[0120] In addition, in the case where there is no substrate placement surface 311 below the region 356m, i.e., in the case where there is the non-substrate placement surface 325 between the substrate placement surfaces 311 below the region 356m, the rotation is stopped. By stopping the rotation, the non-substrate placement surface 325 between the substrate placement surfaces 311 is cleaned. At this time, because the cleaning gas remains on the non-substrate placement surface 325, the film on the non-substrate placement surface 325 can be cleaned.

[0121] The rotation and the stop of the substrate placement plate 317 are repeated as above, and thus the substrate placement surface 311 can be etched and the entire non-substrate placement surface 325 can be cleaned. Therefore, the substrate 100 can be heated uniformly.

[0122] (Second Mode)

[0123] Next, the second mode will be described with reference to Figure 8 to Figure 10 The second mode will be described. Figure 8 is a view equivalent to Figure 2 is a view of the substrate processing apparatus 200 as viewed from the side. Figure 9 is a view for explaining the relationship between the substrate placement plate 317 and the notch plate 361. Figure 10 is a view for explaining the relationship between the substrate placement plate 317, the notch plate 361, and the moving plate 362.

[0124] The second mode differs from the first mode in the shapes of the dielectric plate 360 and the notch plate 361, and mainly differs in that the moving plate 362 capable of adjusting the opening area per unit area of the openings 391 in accordance with the region is provided on the notch plate 361. In addition, the specific processing of the cleaning process differs. Other than that, the structures are the same. The following will be described focusing on the differences.

[0125] The notch plate 361 is provided on the dielectric plate 360. As shown in Figure 9 , the notch plate 361 is rectangular and is disposed from the center to the outer periphery of the processing container 302. The radial holes 339 are provided on the notch plate 361 equally. The dielectric plate 360 is also rectangular like the notch plate 361. The dielectric plate 360 and the notch plate 361 are configured to overlap each other as viewed from above.

[0126] The moving plate 362 is disposed on the notch plate 361. The moving plate 362 is rectangular and is configured to be movable from the center to the outer periphery of the processing container. The container 363 serving as a housing container that can house the moving plate 362 is provided beside the container 351. The space 364 is provided in the container 363 and is configured such that the moving plate 362 can reciprocate between the container 363 and the container 351, specifically, between the space on the notch plate 361, by a moving mechanism not shown.

[0127] As shown in Figure 10 , the moving plate 362 has a first portion 362a on the center side of the processing container 302 and a second portion 362b on the outer periphery side with respect to the first portion 362a. The length of the processing container 302 in the radial direction of the second portion 362b is equal to the diameter of the substrate placement surface 311. The length of the processing container 302 in the radial direction of the first portion 362a is equal to the length of the area 318c that can be covered.

[0128] The first portion 362a is a frame having a hole formed in the center, and is configured to expose the emission hole 339 from the space 355 when the notch plate 361 and the movable plate 362 overlap. The second portion 362b is, for example, a plate having no hole, and is configured to close the emission hole 339 from the space 355 when the notch plate 361 and the movable plate 362 overlap.

[0129] The first portion 362a is also called an exposing portion because it exposes the emission hole 339. In addition, it is also called a hole portion because it has a hole. The second portion 362b is also called a closing portion because it closes the emission hole 339. In addition, the second portion is also called a non-hole portion because it has no hole.

[0130] Next, the cleaning process of the present embodiment will be described. As in the first embodiment, when the cleaning process is performed, a plasma that generates a cleaning gas is generated. In parallel with this, the rotation of the substrate placement plate 317 is started.

[0131] At this time, when the substrate placement surface 311 passes below the plasma generation portion 350, the movable plate 362 is disposed on the notch plate 361. Specifically, the second portion 362b is moved so that the emission hole 339 on the substrate placement surface 311 is closed. At this time, the first portion 362a is also moved, but because a hole is provided in the first portion 362a, the emission hole 339 on the region 318c is not closed. By moving the movable plate 362 in this way, the emission hole 339 of the region 318m is closed and the emission holes 339 of the regions 318c and 318e are opened, as shown in FIG. 6B. Therefore, the plasma is not generated on the substrate placement surface 311, and the plasma can be generated on the regions 318c and 318e on the non-substrate placement surface 325. In this way, the regions 318c and 318e are cleaned. Figure 10

[0132] In addition, when the region between the adjacent substrate placement surfaces 311 in the non-substrate placement surface 325 is cleaned, the movable plate 362 is retracted toward the container 363 during the passage of the region between the adjacent substrate placement surfaces 311 below the plasma generation portion 350. By performing the retraction, the emission holes are opened in the regions 318c, 318m, and 318e, respectively. Therefore, the plasma can be supplied to the regions 318c, 318e, and the region between the adjacent substrate placement surfaces 311 in the non-substrate placement surface 325. In this way, the central region, the outer peripheral region, and the region between the substrate placement surfaces are cleaned.

[0133] As described above, the movable plate 362 is moved in accordance with the movement of the substrate placement surface 311, and thus the non-substrate placement surface 325 as a whole can be cleaned without etching the substrate placement surface 311. Therefore, the substrate 100 can be uniformly heated.​

[0134] In the present embodiment, the moving plate 362 is moved from the center side to the outer periphery side of the processing chamber 301, but is not limited thereto, and can be moved from the outer periphery side to the center side of the processing chamber 301 as long as the structure that the through hole on the substrate placement surface 311 is closed. At this time, the first portion 362a is provided on the outer periphery side of the processing chamber 301. Further, the container 363 is provided on the outer periphery side of the container 351.

[0135] (Third Embodiment)

[0136] Next, the third embodiment will be described with reference to Figure 11 and Figure 12 The third embodiment will be described. Figure 11 is a view equivalent to Figure 2 is a view of the substrate processing apparatus 200 viewed from the side. Figure 12 is a view for explaining the relationship between the substrate placement plate 317 and the notch plate 361.

[0137] The third embodiment differs from the first embodiment in the shape of the notch plate 371. The following will be described focusing on the difference.

[0138] The notch plate 371 is provided from the center side to the outer periphery side of the chamber 302. In the region 325b, a first region 371a of the same size as the substrate placement surface 311 is formed. In a second region 371b of the notch plate 371 other than the region 371a, the through hole 339 is provided. In the region 371a, the through hole 339 is not provided.

[0139] The first region 371a is also called a non-hole portion because of no hole. The second region 371b is also called a hole portion because of the hole.

[0140] Next, the cleaning process of the present embodiment will be described. When the plasma is generated, the rotation of the substrate placement plate 317 is started. When the substrate placement surface 311 is moved to the lower side of the region 371a, the rotation is stopped.

[0141] In the state where the rotation is stopped, the substrate placement surface 311 is disposed on the lower side of the region 371a, and a part of the non-substrate placement surface 325 is disposed on the lower side of the region 371b. The substrate placement surface 311 is not exposed to the plasma, and the non-substrate placement surface 325 on the outer side thereof is exposed to the plasma. Therefore, the substrate placement surface 311 can be etched and the non-substrate placement surface 325 can be cleaned.

[0142] After the predetermined time elapses, the substrate mounting plate 317 is rotated. The rotation is continued until the adjacent substrate mounting surface 311 is disposed below the region 371b. During this period, the non-substrate mounting surface 325 between the substrate mounting surfaces 311 is cleaned by exposure to the plasma state cleaning gas. In addition, although the case where rotation is performed is described here, it is sufficient if the region between the adjacent substrate mounting surfaces 311 is disposed below the plasma generation portion 350, and it can be, for example, a stopped state.

[0143] The plasma processing is performed as the substrate mounting surface 311 moves as described above, and thus it is possible to clean the entire non-substrate mounting surface 325 without etching the substrate mounting surface 311.

[0144] (Other Modes)

[0145] The first to third modes of the present disclosure are described in detail above, but the present disclosure is not limited to the above-described modes, and various modifications can be made without departing from the gist thereof.

[0146] Explanation of Symbols

[0147] 100 - substrate; 200 - substrate processing apparatus; 240 - first gas supply portion; 250 - second gas supply portion; 270 - third gas supply portion; 301 - processing chamber; 302 - chamber; 317 - substrate mounting plate; 324 - rotating portion; 334 - gas discharge portion; 350 - plasma generation portion; 380 - heater.

Claims

1. A substrate processing apparatus characterized by comprising: Having: a processing chamber composed of a processing vessel that processes a substrate; a substrate mounting plate that has a non-substrate mounting surface and a plurality of substrate mounting surfaces, and has a center region composed of a region of the non-substrate mounting surface on a center side of the processing vessel, an edge region that includes the outer peripheral side of the processing vessel in the non-substrate mounting surface, and an intermediate region that includes a plurality of the substrate mounting surfaces, is on the outer peripheral side of the processing vessel than the center region, and is disposed on the center side of the processing vessel than the edge region; a rotating section that rotates the substrate mounting plate; a plasma generating section configured to have a higher plasma density on the non-substrate mounting surface than on the substrate mounting surface; a dielectric plate disposed between the plasma generating section and the substrate mounting plate; a notch plate disposed above the dielectric plate, and having a plurality of radiating holes disposed above regions of the center region, the edge region, and the intermediate region, the opening area per unit area of the radiating holes being configured to be larger in the center region than in the intermediate region, or larger in the edge region than in the intermediate region, or a non-hole section corresponding to the substrate mounting surface is provided in the intermediate region of the notch plate, and a hole section having radiating holes is provided in the center region and the edge region of the notch plate; a microwave supplying section that supplies microwaves to the plasma generating section; a processing gas supplying section that supplies a processing gas to the processing chamber; a cleaning gas supplying section that supplies a cleaning gas to the processing chamber; and a heater disposed below the substrate mounting plate.

2. The substrate processing apparatus according to claim 1, wherein the substrate mounting plate is composed of a permeable material that allows heat to permeate.

3. The substrate processing apparatus according to claim 2, wherein the substrate mounting surface is composed of a permeable material that allows heat to permeate.

4. The substrate processing apparatus according to claim 3, wherein the plasma generating section is configured to have a higher plasma density in the center region than in the intermediate region, or a higher plasma density in the edge region than in the intermediate region.

5. The substrate processing apparatus according to claim 2, wherein the plasma generating section is configured to have a higher plasma density in the center region than in the intermediate region, or a higher plasma density in the edge region than in the intermediate region.

6. The substrate processing apparatus according to claim 2, further comprising: a gate valve disposed in the processing chamber, the plasma generating section is configured to be adjacent to the gate valve.

7. The substrate processing apparatus according to claim 1, wherein the plasma generating section is configured to have a higher plasma density in the center region than in the intermediate region, or a higher plasma density in the edge region than in the intermediate region.

8. The substrate processing apparatus according to claim 7, wherein the substrate processing apparatus further comprises: a container adjacent to the plasma generating portion; a moving plate movable between the inside of the container and the notch plate, and having a first portion configured on the center region or the edge region to close the through hole of the center region or the edge region during a cleaning process, and a second portion configured on the intermediate region to expose the through hole of the intermediate region during the cleaning process; and a control portion configured to control the moving plate so as to be movable.

9. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus further comprises: a container adjacent to the plasma generating portion; a moving plate movable between the inside of the container and the notch plate, and having a first portion configured on the center region or the edge region to close the through hole of the center region or the edge region during a cleaning process, and a second portion configured on the intermediate region to expose the through hole of the intermediate region during the cleaning process; and a control portion configured to control the moving plate so as to be movable.

10. The substrate processing apparatus according to claim 9, wherein the substrate placing plate is made of a transparent material that transmits heat.

11. The substrate processing apparatus according to claim 9, wherein the substrate placing surface is made of a transparent material that transmits heat. having: a process of carrying a substrate into a processing chamber having a substrate placing plate and a processing container, wherein the substrate placing plate has a non-substrate placing surface and a plurality of substrate placing surfaces, and has a center region, an edge region, and an intermediate region, the center region is composed of a region of the non-substrate placing surface including a center side of the processing container, the edge region includes a peripheral side of the processing container in the non-substrate placing surface, and the intermediate region includes a plurality of the substrate placing surfaces, is closer to the peripheral side of the processing container than the center region, and is disposed closer to the center side of the processing container than the edge region; a process of placing a substrate on the substrate placing surface; a process of rotating the substrate placing plate, supplying a processing gas from a processing gas supply portion, and heating the substrate from below the substrate placing plate by a heater, thereby processing the substrate; a process of carrying the substrate out; and having: a process of carrying a substrate into a processing chamber having a substrate placing plate and a processing container, wherein the substrate placing plate has a non-substrate placing surface and a plurality of substrate placing surfaces, and has a center region, an edge region, and an intermediate region, the center region is composed of a region of the non-substrate placing surface including a center side of the processing container, the edge region includes a peripheral side of the processing container in the non-substrate placing surface, and the intermediate region includes a plurality of the substrate placing surfaces, is closer to the peripheral side of the processing container than the center region, and is disposed closer to the center side of the processing container than the edge region; a process of placing a substrate on the substrate placing surface; a process of rotating the substrate placing plate, supplying a processing gas from a processing gas supply portion, and heating the substrate from below the substrate placing plate by a heater, thereby processing the substrate; a process of carrying the substrate out; and ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 12. A method of manufacturing a semiconductor device, characterized by ​ ​ ​ ​ ​ A cleaning gas is supplied in a state where no substrate is present in the processing chamber, and a microwave is supplied to a plasma generation section that generates plasma of the cleaning gas by supplying the microwave to the cleaning gas via a slot plate in a manner that the plasma density on the non-substrate placement surface is higher than the plasma density on the substrate placement surface, wherein the slot plate is disposed above a dielectric plate that is disposed between the plasma generation section and the substrate placement plate, and has a radiation hole provided above the regions of the central region, the edge region, and the intermediate region, the slot plate is disposed above the dielectric plate, and has a radiation hole provided above the regions of the central region, the edge region, and the intermediate region, the opening area per unit area of the radiation hole is configured to be larger in the central region than in the intermediate region, or larger in the edge region than in the intermediate region, or a non-hole portion corresponding to the substrate placement surface is provided in the intermediate region in the slot plate, and a hole portion having a radiation hole is provided in the central region and the edge region in the slot plate.

13. A storage medium, characterized by A program for causing a semiconductor manufacturing apparatus to execute the following steps by a computer is stored: a step of carrying a substrate into a processing chamber having a substrate placement plate and constituted by a processing vessel, wherein the substrate placement plate has a non-substrate placement surface and a plurality of substrate placement surfaces, and has a central region constituted by a region of the non-substrate placement surface including a central side of the processing vessel, an edge region including a peripheral side of the processing vessel in the non-substrate placement surface, and an intermediate region including the plurality of substrate placement surfaces, closer to a peripheral side of the processing vessel than the central region, and disposed closer to a central side of the processing vessel than the edge region; a step of placing a substrate on the substrate placement surface; a step of rotating the substrate placement plate by a rotation section, supplying a processing gas from a processing gas supply section, and heating the substrate from below the substrate placement plate by a heater, thereby processing the substrate; a step of carrying the substrate out; and a step of rotating the substrate placement plate by a rotation section, supplying a processing gas from a processing gas supply section, and heating the substrate from below the substrate placement plate by a heater, thereby processing the substrate; a step of carrying the substrate out; and A cleaning gas is supplied in a state in which no substrate is present in the processing chamber, and a microwave is supplied to a plasma generation portion that generates plasma of the cleaning gas by supplying the microwave to the cleaning gas via a slot plate in a manner in which a plasma density on the non-substrate placement surface is higher than a plasma density on the substrate placement surface, wherein the slot plate is disposed above a dielectric plate and has a radiation hole provided above a region of the central region, the edge region, and the intermediate region, an opening area per unit area of the radiation hole is configured to be larger in the central region than in the intermediate region or to be larger in the edge region than in the intermediate region, or a non-hole portion corresponding to the substrate placement surface is provided in the intermediate region in the slot plate, and a hole portion having a radiation hole is provided in the central region and the edge region in the slot plate.

14. A substrate processing method, characterized by, Having: a process of carrying in a substrate into a processing chamber having a substrate placement plate and constituted by a processing container, wherein the substrate placement plate has a non-substrate placement surface and a plurality of substrate placement surfaces, and has a central region constituted by a region of the non-substrate placement surface including a central side of the processing container, an edge region including an outer peripheral side of the processing container in the non-substrate placement surface, and an intermediate region including the plurality of substrate placement surfaces, closer to an outer peripheral side of the processing container than the central region, and disposed closer to a central side of the processing container than the edge region; a process of placing a substrate on the substrate placement surface; a process of rotating the substrate placement plate by a rotation portion, supplying a processing gas from a processing gas supply portion, and heating the substrate from below the substrate placement plate by a heater, thereby processing the substrate; a process of carrying out the substrate; and a process of supplying a cleaning gas in a state in which no substrate is present in the processing chamber, and supplying a microwave to a plasma generation portion that generates plasma of the cleaning gas by supplying the microwave to the cleaning gas via a slot plate in a manner in which a plasma density on the non-substrate placement surface is higher than a plasma density on the substrate placement surface, wherein the slot plate is disposed above a dielectric plate and has a radiation hole provided above a region of the central region, the edge region, and the intermediate region, an opening area per unit area of the radiation hole is configured to be larger in the central region than in the intermediate region or to be larger in the edge region than in the intermediate region, or a non-hole portion corresponding to the substrate placement surface is provided in the intermediate region in the slot plate, and a hole portion having a radiation hole is provided in the central region and the edge region in the slot plate.

Images