Support unit and substrate processing apparatus including the same

Abstract

A support unit for supporting a substrate includes a heating member; and a reflector, and the reflector includes a curved surface that reflects thermal energy generated by the heating member toward an edge region of the substrate.

Description

TECHNICAL FIELD

[0001] Embodiments of the inventive concept described herein relate to a support unit and a substrate processing apparatus, and more particularly, to a support unit for performing a substrate processing process while heating a substrate, and a substrate processing apparatus including the same. BACKGROUND

[0002] Generally, in a process of manufacturing a flat panel display apparatus or a semiconductor element, various processes, such as a photoresist coating process, a developing process, an etching process, an ashing process, etc. are performed to process a glass substrate or a wafer. In each process, a wet cleaning process using a chemical or deionized water and a drying process for drying the chemical or deionized water remaining on the surface of the substrate are performed to remove various contaminants attached to the substrate.

[0003] In recent years, an etching process of selectively removing a silicon nitride film and a silicon oxide film at a high temperature using a chemical such as sulfuric acid or phosphoric acid has been used. In a substrate processing apparatus using a high-temperature chemical, a substrate processing apparatus for heating a substrate is used to increase an etching rate. One example of the substrate processing apparatus is disclosed in U.S. Patent Publication No. 2016-0013079. The substrate processing apparatus disclosed in U.S. Patent Publication No. 2016-0013079 has a lamp for heating a substrate and a reflector for reflecting heat radiated from the lamp inside a rotary head. However, when a substrate is processed using the substrate processing apparatus, the efficiency of processing a substrate edge region is relatively low. Specifically, this is because the number of lamps responsible for heating the substrate edge region is less than the number of lamps responsible for heating a substrate center region. In other words, when a substrate is processed using the substrate processing apparatus, the processing efficiency for the substrate edge region is lower than the processing efficiency for the substrate center region, thereby reducing the processing uniformity for the entire substrate. In terms of yield, the processing uniformity for the entire substrate is a very important factor, and thus the heat treatment of the substrate edge region needs to be improved. To improve the heat treatment of the substrate edge region, a method of using a separate heat source (e.g., a laser irradiation member) that provides heat energy to the substrate edge region can be considered. However, such a method can cause an increase in facility costs and can be inefficient due to space limitations. SUMMARY

[0004] Embodiments of the inventive concept provide a support unit for efficiently processing a substrate and a substrate processing apparatus including the same.

[0005] Further, embodiments of the inventive concept provide a support unit for improving the uniformity of processing a substrate and a substrate processing apparatus including the same.

[0006] Further, embodiments of the present inventive concept provide a support unit for improving efficiency of processing an edge region of a substrate and a substrate processing apparatus including the same.

[0007] Further, embodiments of the present inventive concept provide a support unit for improving etching rate of an edge region of a substrate and a substrate processing apparatus including the same.

[0008] The technical problems to be solved by the present inventive concept are not limited to the above-mentioned problems, and any other technical problems not mentioned herein will be clearly understood by those skilled in the art from the following description.

[0009] According to an embodiment, a support unit for supporting a substrate includes a heating member and a reflector including a curved surface that reflects thermal energy generated by the heating member toward an edge region of the substrate.

[0010] According to an embodiment, the curved surface can form a portion of a virtual ellipse when the support unit is viewed from a front surface.

[0011] According to an embodiment, the virtual ellipse can have a first focal point and a second focal point, and the heating member can be positioned to overlap one of the first focal point and the second focal point when viewed from the front surface.

[0012] According to an embodiment, the edge region of the substrate can overlap the other of the first focal point and the second focal point when viewed from the front surface.

[0013] According to an embodiment, the heating member can include one or more lamps configured to emit light to heat the substrate.

[0014] According to an embodiment, at least some of the lamps can have different annular shapes in radius and can be concentric with each other.

[0015] According to an embodiment, the reflector can include a base disposed below the heating member, and a protrusion protruding upward from the base, and the base and / or the protrusion can include the curved surface.

[0016] According to an embodiment, the protrusion can be disposed between an outermost lamp among the lamps and a lamp adjacent to the outermost lamp when viewed from above.

[0017] According to an embodiment, the protrusion can include a first protrusion including a first curved surface that reflects the thermal energy toward a first location on the edge region of the substrate, and a second protrusion including a second curved surface that reflects the thermal energy toward a second location on the edge region of the substrate, the second location being different from the first location.

[0018] According to an embodiment, the first curved surface can form a portion of a first virtual ellipse when viewed from a front, and the second curved surface can form a portion of a second virtual ellipse when viewed from the front, the second virtual ellipse having a different focal point than the first virtual ellipse.

[0019] According to an embodiment, the support unit can further include a chuck that supports the substrate, and a rotational actuator that rotates the chuck.

[0020] According to an embodiment, the reflector and the heating member can be independent of rotation of the chuck.

[0021] According to an embodiment, an apparatus for processing a substrate includes a support unit that supports the substrate, and a liquid dispensing unit that dispenses a processing liquid onto the substrate supported on the support unit. The support unit includes a chuck that supports the substrate, a heating member that emits light to heat the substrate supported on the chuck, and a reflector disposed below the heating member. The reflector includes a curved surface configured to reflect the light toward an edge region of the substrate supported on the chuck.

[0022] According to an embodiment, the curved surface can form a portion of a virtual ellipse when viewed from a front of the support unit.

[0023] According to an embodiment, the virtual ellipse can have a first focal point and a second focal point, a center of the heating member can overlap one of the first focal point and the second focal point when viewed from the front, and the edge region of the substrate supported on the chuck can overlap the other of the first focal point and the second focal point when viewed from the front.

[0024] According to an embodiment, the reflector can include a base disposed below the heating member, and a protrusion protruding upward from the base. The base and / or the protrusion can each include the curved surface, and the curved surface can reflect the light toward different locations on the substrate supported on the support unit.

[0025] According to one embodiment, the processing liquid can include a chemical for etching a film on the substrate, and wherein the reflector can be formed of a material including at least one of aluminum, copper, quartz, gold, or silver.

[0026] According to one embodiment, an apparatus for processing a substrate includes a support unit that supports the substrate; and a liquid dispensing unit that dispenses a processing liquid onto the substrate supported on the support unit. The support unit includes a chuck that supports the substrate; a lamp disposed within the chuck and emitting light to heat the substrate supported on the chuck; and a reflector that reflects the light toward an edge region of the substrate. The reflector includes a curved surface that forms a portion of a virtual ellipse having a first focal point and a second focal point when viewed from a front surface of the support unit. The first focal point coincides with a center of the lamp when viewed from the front surface, and the second focal point overlaps the edge region of the substrate supported on the chuck when viewed from the front surface.

[0027] According to one embodiment, the reflector can include a base portion disposed below the lamp; and protrusions protruding upward from the base portion and including a curved surface together with the base portion. The protrusions can have an arc shape, and when viewed from above, the protrusions are spaced apart from each other to form a circular shape.

[0028] According to one embodiment, the curved surface can reflect the light toward different locations on the substrate supported on the support unit. BRIEF DESCRIPTION OF DRAWINGS

[0029] The above and other objects and features will become apparent from the following description of embodiments given with reference to the following drawings, in which like reference numerals refer to like elements unless otherwise specified, and wherein:

[0030] Figure 1 is a schematic plan view showing a substrate processing apparatus according to an embodiment of the present inventive concept;

[0031] Figure 2 is a plan view of the substrate processing apparatus of Figure 1 ;

[0032] Figure 3 is a cross-sectional view of the substrate processing apparatus of Figure 1 ;

[0033] Figure 4 is a cross-sectional view showing one embodiment of a support unit of Figure 3 ;

[0034] Figure 5 is an enlarged view showing a portion of the support unit of Figure 4 ;

[0035] Figure 6 illustrates a virtual ellipse of Figure 5 ;

[0036] Figure 7 illustrates a state in which the heating member of Figure 6 heats a substrate;

[0037] Figure 8 illustrates an etching rate depending on a distance from a center of a substrate when a general substrate processing apparatus processes a substrate;

[0038] Figure 9 illustrates an etching rate depending on a distance from a center of a substrate when a substrate processing apparatus according to an embodiment of the present inventive concept processes a substrate;

[0039] Figures 10 to 12 is an enlarged view showing a portion of the support unit according to another embodiment of the present inventive concept;

[0040] Figure 13 illustrates a position on a substrate to which light reflected by the protrusion of Figures 10 to 12 reaches; and

[0041] Figure 14 illustrates a state in which light reflected by the protrusion of Figures 10 to 12 reaches an edge region of a substrate and heats the edge region of the substrate. DETAILED DESCRIPTION

[0042] Hereinafter, embodiments of the present inventive concept will be described in detail with reference to the accompanying drawings such that those skilled in the art to which the present inventive concept pertains can easily practice the present inventive concept. However, the present inventive concept can be implemented in various different forms and is not limited to the embodiments described herein. In addition, in describing the embodiments of the present inventive concept, when a detailed description of a known function or configuration related to the present inventive concept can make the subject matter of the present inventive concept unnecessarily obscure, the detailed description is omitted. Furthermore, throughout the drawings, components performing similar functions and operations are provided with the same reference numbers.

[0043] The terms "comprise" and "include" in the specification are "open-type" expressions that simply mean that the corresponding constituent element is present, and do not exclude the possibility of additional constituent elements unless specifically described otherwise. Specifically, it should be understood that the terms "comprise", "include" and "have" as used herein specify the presence of stated features, integers, steps, operations, components, parts, and / or portions but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, portions, and / or groups thereof.

[0044] The singular form "a," "an," and "the" can include plural references unless otherwise stated. Also, in the drawings, the shapes and the dimensions of components can be exaggerated for the sake of clarity.

[0045] Figure 1 is a schematic plan view showing a substrate processing apparatus including a substrate processing device according to an embodiment of the present inventive concept. Referring to Figure 1 , the substrate processing apparatus 1 includes an indexing module 1000 and a processing module 2000. The indexing module 1000 includes a load port 1200 and a transfer frame 1400. The load port 1200, the transfer frame 1400, and the processing module 2000 are arranged in a row in order. Hereinafter, a direction in which the load port 1200, the transfer frame 1400, and the processing module 2000 are arranged is referred to as a first direction 12. A direction perpendicular to the first direction 12 when viewed from above is referred to as a second direction 14, and a direction perpendicular to a plane including the first direction 12 and the second direction 14 is referred to as a third direction 16.

[0046] A carrier 1300 in which a substrate W is accommodated is located on the load port 1200. A plurality of load ports 1200 can be provided. The load ports 1200 can be arranged in a row along the second direction 14. Figure 1 An example in which the indexing module 1000 includes four load ports 1200 is shown. However, the number of load ports 1200 can be increased or decreased depending on conditions such as process efficiency and footprint of the processing module 2000. A slot (not shown) that supports an edge of the substrate W is formed in the carrier 1300. The slot is disposed along the third direction 16. The substrates W are stacked in the carrier 1300 in a state in which they are spaced apart from each other along the third direction 16. A front opening unified pod (FOUP) can be used as the carrier 1300.

[0047] The processing module 2000 includes a buffer unit 2200, a transfer chamber 2400, and a processing chamber 2600. The transfer chamber 2400 is disposed such that its length direction is parallel to the first direction 12. The processing chambers 2600 are disposed on one side and the opposite side of the transfer chamber 2400 along the second direction 14. The processing chambers 2600 on one side of the transfer chamber 2400 and the processing chambers 2600 on the opposite side of the transfer chamber 2400 are symmetrically arranged with respect to the transfer chamber 2400. Some of the processing chambers 2600 are disposed along the length direction of the transfer chamber 2400. Further, other processing chambers 2600 are stacked one above another. That is, the processing chambers 2600 can be disposed in an A x B array (A and B are natural numbers of 1 or more) on one side of the transfer chamber 2400. Here, "A" is the number of the processing chambers 2600 disposed in a row along the first direction 12, and "B" is the number of the processing chambers 2600 disposed in a column along the third direction 16. When four or six processing chambers 2600 are disposed on one side of the transfer chamber 2400, the processing chambers 2600 can be arranged in a 2 x 2 or 3 x 2 array. The number of the processing chambers 2600 can be increased or decreased. Alternatively, the processing chambers 2600 can be disposed only on one side of the transfer chamber 2400. In another case, the processing chambers 2600 can be disposed in a single layer on one side and the opposite side of the transfer chamber 2400.

[0048] The buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400. The buffer unit 2200 provides a space for the substrate W to stay before being transferred between the transfer chamber 2400 and the transfer frame 1400. The buffer unit 2200 has a plurality of slots (not shown) for placing the substrate W. The slots (not shown) are spaced apart from one another along the third direction 16. The buffer unit 2200 is open on a side facing the transfer frame 1400 and on the opposite side facing the transfer chamber 2400.

[0049] The transfer frame 1400 transfers the substrate W between the carrier 1300 placed on the load port 1200 and the buffer unit 2200. An indexing track 1420 and an indexing robot 1440 are provided in the transfer frame 1400. The indexing track 1420 is arranged such that the length direction thereof is parallel to the second direction 14. The indexing robot 1440 is installed on the indexing track 1420 and moves linearly along the indexing track 1420 in the second direction 14. The indexing robot 1440 has a base 1441, a main body 1442, and an indexing arm 1443. The base 1441 is movable along the indexing track 1420. The main body 1442 is coupled to the base 1441. The main body 1442 is movable on the base 1441 in the third direction 16. In addition, the main body 1442 is rotatable on the base 1441. The indexing arm 1443 is coupled to the main body 1442 and is movable back and forth relative to the main body 1442. A plurality of indexing arms 1443 can be provided. The indexing arms 1443 can be individually driven. The indexing arms 1443 are stacked one on top of another in the third direction 16 with a spacing gap therebetween. Some of the indexing arms 1443 can be used to transfer the substrate W from the processing module 2000 to the carrier 1300, while other indexing arms 1443 can be used to transfer the substrate W from the carrier 1300 to the processing module 2000. Thus, during the transfer of the substrate W by the indexing robot 1440 between the carrier 1300 and the processing module 2000, particles generated from the substrate W to be processed can be prevented from adhering to the processed substrate W.

[0050] The transfer chamber 2400 transfers the substrate W between the buffer unit 2200 and the processing chamber 2600 and between the processing chambers 2600. A guide track 2420 and a main robot 2440 are provided in the transfer chamber 2400. The guide track 2420 is arranged such that the length direction thereof is parallel to the first direction 12. The main robot 2440 is installed on the guide track 2420 and moves linearly on the guide track 2420 in the first direction 12. The main robot 2440 has a base 2441, a main body 2442, and a main arm 2443. The base 2441 is movable along the guide track 2420. The main body 2442 is coupled to the base 2441. The main body 2442 is movable on the base 2441 in the third direction 16. In addition, the main body 2442 is rotatable on the base 2441. The main arm 2443 is coupled to the main body 2442 and is movable back and forth relative to the main body 2442. A plurality of main arms 2443 can be provided. The main arms 2443 can be individually driven. The main arms 2443 are stacked one on top of another in the third direction 16 with a spacing gap therebetween. The main arms 2443 used to transfer the substrate W from the buffer unit 2200 to the processing chamber 2600 can be different from the main arms 2443 used to transfer the substrate W from the processing chamber 2600 to the buffer unit 2200.

[0051] The processing chambers 2600 each include a substrate processing apparatus 10 that performs a cleaning process on the substrate W. The substrate processing apparatus 10 included in each of the processing chambers 2600 can have different structures depending on the type of cleaning process performed by the processing chamber. Alternatively, the substrate processing apparatus 10 in each of the processing chambers 2600 can have the same structure. Alternatively, the processing chambers 2600 can be divided into a plurality of groups. The substrate processing apparatus 10 in the processing chambers 2600 belonging to the same group can have the same structure, while the substrate processing apparatus 10 in the processing chambers 2600 belonging to different groups can have different structures. For example, when the processing chambers 2600 are divided into two groups, a first group of the processing chambers 2600 can be disposed on one side of the transfer chamber 2400, while a second group of the processing chambers 2600 can be disposed on the opposite side of the transfer chamber 2400. Alternatively, on one side and the opposite side of the transfer chamber 2400, the first group of the processing chambers 2600 can be disposed on a lower layer, while the second group of the processing chambers 2600 can be disposed on an upper layer. The first group of the processing chambers 2600 can be distinguished from the second group of the processing chambers 2600 according to the type of chemical used and the type of cleaning method.

[0052] In the following embodiments, an apparatus for cleaning a substrate W using a processing fluid such as high-temperature sulfuric acid, an alkaline chemical, an acidic chemical, a rinsing solution, and a drying gas will be described as an example. However, without being limited thereto, the spirit and scope of the inventive concept is applicable to various types of apparatuses that perform a process such as an etching process while rotating a substrate W.

[0053] Figure 2 is a plan view of a substrate processing apparatus of Figure 1 Figure 1 , Figure 3 is a cross-sectional view of a substrate processing apparatus of Figure 1 Referring to Figure 2 and Figure 3 , the substrate processing apparatus 10 includes a chamber 100, a bowl 200, a support unit 300, a liquid distribution unit 400, an exhaust unit 500, and a lift unit 600.

[0054] The chamber 100 provides a sealed internal space. The chamber 100 is equipped with an airflow supply member 110 at its top portion. The airflow supply member 110 forms a downward airflow in the chamber 100. The airflow supply member 110 filters high-humidity external air and supplies it into the chamber 100. The high-humidity external air passes through the airflow supply member 110 and forms a downward airflow while being supplied into the chamber 100. The downward airflow provides uniform airflow on the substrate W and releases contaminants generated in the process of processing the surface of the substrate W with a processing fluid through the recovery bowls 210, 220, and 230 of the bowl 200 to the exhaust unit 500.

[0055] ​The inner space of the chamber 100 is divided into a processing zone 120 and a maintenance zone 130 by a horizontal partition wall 102. The bowl 200 and the support unit 300 are located in the processing zone 120. In addition to the recovery lines 241, 243, and 245 connected to the bowl 200 and the exhaust line 510, the actuators of the lift unit 600, the actuators of the liquid distribution unit 400, the supply lines, and the like are also located in the maintenance zone 130. The maintenance zone 130 is isolated from the processing zone 120.

[0056] The bowl 200 has a cylindrical shape with an open top and has a processing space for processing the substrate W. The open top side of the bowl 200 serves as a passage for loading or unloading the substrate W into or out of the bowl 200. The support unit 300 is located in the processing space. During processing, the support unit 300 rotates the substrate W while supporting the substrate W.

[0057] The bowl 200 has a lower space at its bottom to which an exhaust pipe 290 is connected for forced exhaust. The bowl 200 includes a first recovery bowl 210, a second recovery bowl 220, and a third recovery bowl 230, which are disposed in multiple stages and receive process liquid and gas that falls from the rotating substrate W.

[0058] The first recovery bowl 210, the second recovery bowl 220, and the third recovery bowl 230 have exhaust holes H in fluid communication with one common annular space. Specifically, each of the first to third recovery bowls 210, 220, and 230 includes a bottom wall having a circular ring shape and a side wall extending upward from the bottom wall and having a cylindrical shape. The second recovery bowl 220 surrounds and is spaced apart from the first recovery bowl 210. The third recovery bowl 230 surrounds and is spaced apart from the second recovery bowl 220.

[0059] The first recovery bowl 210, the second recovery bowl 220, and the third recovery bowl 230 can have first, second, and third recovery spaces RSI, RS2, and RS3, respectively, into which a flow of process liquid and mist air containing the process liquid that falls from the substrate W is introduced. The first recovery space RSI is defined by the first recovery bowl 210, the second recovery space RS2 is defined by the partition space between the first recovery bowl 210 and the second recovery bowl 220, and the third recovery space RS3 is defined by the partition space between the second recovery bowl 220 and the third recovery bowl 230.

[0060] The top side of each of the first, second, and third recovery bowl 210, 220, and 230 is open at the center. The first, second, and third recovery bowl 210, 220, and 230 each include an inclined wall that is inclined upward, such that the distance between the inclined wall and the corresponding bottom wall gradually increases from the side wall to the open top side. The process liquid that is scattered from the substrate W flows into the first, second, and / or third recovery space RS1, RS2, and RS3 along the top side of the first, second, and third recovery bowl 210, 220, and 230.

[0061] The first process liquid introduced into the first recovery space RS1 is discharged to the outside through the first recovery line 241. The second process liquid introduced into the second recovery space RS2 is discharged to the outside through the second recovery line 243. The third process liquid introduced into the third recovery space RS3 is discharged to the outside through the third recovery line 245.

[0062] The liquid distribution unit 400 can distribute a process liquid onto the substrate W to process the substrate W. The liquid distribution unit 400 can distribute a heated process liquid onto the substrate W. The heated process liquid can be a high-temperature chemical used to process (e.g., etch) a surface of the substrate W. For example, the chemical can be sulfuric acid, phosphoric acid, or a mixture thereof. The liquid distribution unit 400 can include a liquid nozzle member 410 and a supply unit 420.

[0063] The liquid nozzle member 410 can include a nozzle 411, a nozzle arm 413, a support rod 415, and a nozzle actuator 417. The nozzle 411 can receive a process liquid from the supply unit 420. The nozzle 411 can distribute the process liquid onto a surface of the substrate W. The nozzle arm 413 extends in one direction and is equipped with the nozzle 411 at its tip. The nozzle arm 413 supports the nozzle 411. The nozzle arm 413 is equipped with the support rod 415 at its rear end. The support rod 415 is located at the bottom of the nozzle arm 413. The support rod 415 is disposed perpendicular to the nozzle arm 413. The nozzle actuator 417 is disposed at the lower end of the support rod 415. The nozzle actuator 417 rotates the support rod 415 about the longitudinal axis of the support rod 415. By the rotation of the support rod 415, the nozzle arm 413 and the nozzle 411 swing about the support rod 415. The nozzle 411 can swing 200 between the outside and the inside of the bowl. The nozzle 411 can distribute the process liquid while swinging between the center region and the edge region of the substrate W.

[0064] The venting unit 500 can vent the interior of the bowl-shaped portion 200. For example, the venting unit 500 can apply venting pressure (suction pressure) to the recovery bowl-shaped portions of the first recovery bowl-shaped portion 210, the second recovery bowl-shaped portion 220, and the third recovery bowl-shaped portion 230 that recover the processing liquid during processing. The venting unit 500 may include an vent line 510 connected to an vent pipe 290 and a damper 520. The vent line 510 receives venting pressure from an vent pump (not shown) and is connected to a main vent line embedded in the space at the bottom of the semiconductor production line.

[0065] The bowl-shaped portion 200 is connected to a lifting unit 600 that changes the vertical position of the bowl-shaped portion 200. The lifting unit 600 moves the bowl-shaped portion 200 linearly in the up / down direction. As the bowl-shaped portion 200 moves in the up / down direction, the height of the bowl-shaped portion 200 relative to the support unit 300 changes.

[0066] The lifting unit 600 includes a support 612, a movable shaft 614, and an actuator 616. The support 612 is fixedly attached to the outer wall of the bowl-shaped portion 200. The movable shaft 614 is fixedly connected to the support 612 and moves the substrate W in the up / down direction via the actuator 616. When the substrate W is loaded onto or unloaded from the support unit 300, the bowl-shaped portion 200 lowers so that the support unit 300 protrudes beyond the bowl-shaped portion 200. Furthermore, during processing, the height of the bowl-shaped portion 200 is adjusted according to the type of processing liquid dispensed onto the substrate W, so that the processing liquid is introduced into preset recovery bowl-shaped portions 210, 220, and 230, respectively. The bowl-shaped portion 200 can change the type of processing liquid and contaminated gas recovered into the respective recovery spaces RS1, RS2, and RS3.

[0067] Figure 4 Yes, it shows Figure 3 A cross-sectional view of one embodiment of the support unit. Figure 5 It is shown Figure 4 An enlarged view of a portion of the support unit. (Reference) Figure 4 and Figure 5 The support unit 300 can support and rotate the substrate W during processing.

[0068] The support unit 300 may include a chuck 310, a rotary actuator 320, a rear nozzle 330, a heating element 340, a cooling element 350, a reflector 360, and a heat sink 370.

[0069] The chuck 310 includes a chuck table 312 and a quartz window 314. The chuck table 312 and the quartz window 314 can be combined with each other to form an inner space. For example, the chuck table 312 can have a cylindrical shape which is open at the top. Also, the quartz window 314 can have a cap shape which covers the chuck table 312. Accordingly, the chuck table 312 and the quartz window 314 can be combined with each other to form the inner space.

[0070] The chuck table 312 can be coupled with and rotated by the rotary actuator 320. The chuck pins 316 can be installed on an edge region of the quartz window 314. The chuck pins 316 pass through the quartz window 314 and protrude above the quartz window 314. The chuck pins 316 can align with the substrate W to position the substrate W supported by the plurality of support pins 318 in a correct position. During processing, the chuck pins 316 can contact the side of the substrate W to prevent the substrate W from deviating from the correct position.

[0071] The quartz window 314 is located above the chuck table 312. The quartz window 314 protects the heating member 340. The quartz window 314 can be transparent. The quartz window 314 can be rotated together with the chuck table 312. The quartz window 314 includes the support pins 318. The support pins 318 are disposed on an edge portion of an upper surface of the quartz window 314 and are spaced apart from each other at a predetermined interval. The support pins 318 protrude upward from the quartz window 314. The support pins 318 support the lower surface of the substrate W and space the substrate W upward from the quartz window 314.

[0072] The rotary actuator 320 has a hollow shape. The rotary actuator 320 is coupled with and rotates the chuck table 312. When the chuck table 312 is rotated, the quartz window 314 can be rotated together with the chuck table 312. Also, components inside the chuck 310 can be positioned independently of the rotation of the chuck 310. For example, the heating member 340, the reflector 360, and the heat sink 370, which will be described below, can be positioned independently of the rotation of the chuck 310.

[0073] The rear nozzle 330 dispenses a chemical onto the lower surface of the substrate W. The rear nozzle 330 includes a nozzle body 332 and a chemical dispensing portion 334. The chemical dispensing portion 334 is located at a central portion of the quartz window 314. The nozzle body 332 can be axially inserted through the hollow rotary actuator 320. The nozzle body 332 can have a chemical delivery line, a gas supply line, and a purge gas supply line therein. The chemical delivery line supplies an etchant for etching the lower surface of the substrate W to the chemical dispensing portion 334. The gas supply line supplies nitrogen gas for adjusting etching uniformity to the lower surface of the substrate W. The purge gas supply line supplies a nitrogen purge gas to prevent the etchant from permeating between the quartz window 314 and the nozzle body 332.

[0074] The heating member 340 can heat the substrate W during processing. The heating member 340 can be disposed inside the chuck 310. For example, the heating member 340 can be disposed in an inner space of the chuck 310 defined by a combination of the chuck table 312 and the quartz window 314. The heating member 340 includes lamps 342 and a temperature controller (not shown).

[0075] The lamps 342 are mounted above the chuck table 312. The lamps 342 can generate heat energy to heat the substrate W supported on the support unit 300. The lamps 342 can heat the substrate W by applying light to the substrate W supported on the support unit 300. The lamps 342 can have a ring shape. A plurality of lamps 342 can be provided. The lamps 342 can have different diameters. The lamps 342 can be individually controlled by the temperature controller. The lamps 342 can be infrared (IR) lamps. The lamps 342 can emit infrared light to heat the substrate W.

[0076] The heating member 340 can be divided into a plurality of concentric segments. The lamps 342 can be disposed in the segments to individually heat the segments, respectively. At least some of the lamps 342 can have a ring shape. The lamps 342 can have different radii with respect to the center of the chuck table 312 and can be concentric with each other. Although six lamps 342 are shown in this embodiment, this is merely exemplary, and the number of lamps 342 can be increased or decreased depending on the extent to which the temperature of the substrate W is controlled to a desired temperature. By controlling the temperature of each segment, the heating member 340 can continuously increase or decrease the temperature depending on the radius of the substrate W during processing.

[0077] The cooling member 350 can supply a cooling fluid into the chuck 310. For example, the cooling member 350 can supply a cooling fluid into a fluid passage formed inside a heat sink 370 to be described later. The cooling fluid can be a gas. The cooling fluid can be an inert gas. For example, the cooling fluid can be an inert gas containing nitrogen.

[0078] The reflector 360 can reflect heat energy generated by the heating member 340 toward the substrate W. The reflector 360 can reflect heat energy generated by the heating member 340 toward the edge region and / or the center region of the substrate W. The reflector 360 can be formed of a material having a high reflection efficiency with respect to heat energy generated by the heating member 340. The reflector 360 can be formed of a material having a high reflection efficiency with respect to light emitted by the lamps 342. For example, the reflector 360 can be formed of a material containing gold, silver, copper, and / or aluminum. The reflector 360 can be formed of a material obtained by coating quartz with gold, silver, copper, and / or aluminum. The reflector 360 can be formed of a material obtained by coating quartz with gold, silver, copper, and / or aluminum by physical vapor deposition (PVD).

[0079] A heat dissipation plate 370 can be disposed inside the chuck 310. The heat dissipation plate 370 can be disposed in an inner space formed by the chuck table 312 and the quartz window 314. When viewed from above, the heat dissipation plate 370 can have a substantially circular plate shape. The heat dissipation plate 370 can have a cooling line formed therein through which a cooling fluid supplied by the cooling member 350 flows. The heat dissipation plate 370 can be formed of a material having a high thermal conductivity to minimize a temperature rise of the rotary actuator 320 caused by heat generated by the heating member 340. When the heat dissipation plate 370 is formed of a material having a high thermal conductivity, the heat dissipation plate 370 can quickly release heat to the outside of the support unit 300. This is to prevent the rotary actuator 320 from operating inappropriately when the temperature of the rotary actuator 320 is excessively high. The heat dissipation plate 370 can be formed of a material including aluminum. Also, the heat dissipation plate 370 can be formed of a material having a higher thermal conductivity than the reflector 360.

[0080] The reflector 360 can be disposed inside the chuck 310. The reflector 360 can be disposed in an inner space formed by the combination of the chuck table 312 and the quartz window 314. When viewed from above, the reflector 360 can have a substantially circular plate shape. For example, when viewed from above, the reflector 360 can have a circular plate shape having an opening in a central region thereof.

[0081] The reflector 360 can include a base 362 and protrusions 364. The base 362 can be disposed below the heating member 340. The base 362 can be disposed below the lamps 342. The protrusions 364 can protrude upward from the base 362. The protrusions 364 can be disposed between two of the lamps 342 adjacent to each other. For example, when viewed from above, the protrusions 364 can be disposed between the outermost lamp 342 among the lamps 342 and the lamp 342 closest to the outermost lamp 342. When viewed from above, the protrusions 364 can have an arc shape. Also, a plurality of protrusions 364 can be provided. When viewed from above, the protrusions 364 can be combined together to form a ring shape.

[0082] A surface of at least a portion of the base 362 and / or a surface of at least a portion of the protrusions 364 can be curved. For example, a surface of the base 362 facing the heating member 340 and / or a surface of the protrusions 364 facing the heating member 340 can be curved. For example, the surface of the base 362 and / or the surface of the protrusions 364 can include a curved surface R that reflects light emitted from the lamps 342 toward an edge region of the substrate W. For example, the surface of the base 362 and the surface of the protrusions 364 can be combined with each other to form the curved surface R. When viewed from the front of the support unit 300, the curved surface R can form a portion of a virtual circle. For example, when viewed from the front of the support unit 300, the curved surface R can form a portion of a virtual ellipse E.

[0083] Figure 6 illustrate Figure 5 a virtual ellipse. Referring toFigure 6 The virtual ellipse E can have two focal points. For example, the virtual ellipse E can have a first focal point Fl and a second focal point F2. The virtual ellipse E has an optical property that when light emitted from one of the focal points Fl and F2 of the virtual ellipse E is reflected by a reflecting surface forming a part of the virtual ellipse E, the reflected light is necessarily directed to the other one of the focal points Fl and F2. For example, when light emitted from the first focal point Fl is reflected by a reflecting surface forming a part of the virtual ellipse E, the reflected light is necessarily directed to the second focal point F2. The reflector 360 according to the embodiment of the present inventive concept improves the heating efficiency of the edge region of the substrate W by using the optical property of the ellipse E.

[0084] For example, referring to Figure 7 The virtual ellipse E can have a first focal point Fl and a second focal point F2. When viewed from the front surface of the support unit 300, the heating member 340 can be positioned to overlap one of the first focal point Fl and the second focal point F2. For example, when viewed from the front surface of the support unit 340, the center C of the lamp 342 of the heating member 340 can coincide with the first focal point Fl. In addition, the edge region 300 of the substrate W supported on the support unit can overlap the other one of the first focal point Fl and the second focal point F2. For example, when viewed from the front surface of the support unit 300, the edge region of the substrate W can overlap the second focal point F2. In Figure 7 In the above-described embodiment, the position where the second focal point F2 and the edge region of the substrate W overlap each other is defined as a heating position P.

[0085] When the lamp 342 emits light to heat the substrate W, the light emitted from the lamp 342 can be directly applied to the substrate W and can be indirectly applied to the substrate W by being reflected from the reflecting surface of the reflector 360. As described above, the curved surface R formed by the base 342 and the protrusion 364 of the reflector 360 forms a part of the virtual ellipse E. Thus, when the light emitted from the lamp 342 is reflected by the curved surface R, the reflected light is necessarily directed to the second focal point F2, specifically, to the heating position P. In other words, the present inventive concept includes the curved surface R forming a part of the virtual ellipse E having a first focal point Fl and a second focal point F2, the lamp 342 is located at the first focal point Fl and the edge region of the substrate W overlaps the second focal point F2. Thus, the light emitted from the lamp 342 at the first focal point Fl is reflected by the reflector 360 and directed to the second focal point F2, and thus heat can be concentrated on the edge region of the substrate W.

[0086] Figure 8 FIG. 1 illustrates an etch rate depending on a distance from a center of a substrate when a general substrate processing apparatus processes the substrate; Figure 9 FIG. 1 illustrates an etch rate depending on a distance from a center of a substrate when a general substrate processing apparatus processes the substrate; Figure 8As can be seen, when a general substrate processing apparatus processes a substrate, the etching speed slightly decreases as approaching the edge region of the substrate. This is because the number of lamps responsible for heating the edge region of the substrate is less than the number of lamps responsible for heating the center region of the substrate. In contrast, as shown in Figure 9 when a substrate processing apparatus according to an embodiment of the present inventive concept processes a substrate, the substrate processing apparatus can concentrate heat on the edge region of the substrate, thereby preventing the etching rate of the edge region of the substrate from decreasing. This is because the infrared light emitted from the outermost lamps 342 is reflected by the curved surface R of the reflector 360, so that heat is concentrated on the edge region of the substrate. That is, the substrate processing apparatus according to the embodiment of the present inventive concept can effectively improve the uniformity of substrate processing.

[0087] Figures 10 to 12 is an enlarged view illustrating a portion of a support unit according to another embodiment of the present inventive concept. Referring to Figures 10 to 12 , the reflector 360 according to another embodiment of the present inventive concept can include a plurality of protrusions 364a, 364b, and 364c. For example, the protrusions 364a, 364b, and 364c can include a first protrusion 364a, a second protrusion 364b, and a third protrusion 364c.

[0088] The first protrusion 364a can include a first curved surface R1 forming a portion of a first virtual ellipse E1 when viewed from the front of the support unit 300. The second protrusion 364b can include a second curved surface R2 forming a portion of a second virtual ellipse E2 when viewed from the front of the support unit 300. The third protrusion 364c can include a third curved surface R3 forming a portion of a third virtual ellipse E3 when viewed from the front of the support unit 300. In addition, a portion of each of the first to third curved surfaces R1, R2, and R3 can be defined by a portion of a surface of the base 362.

[0089] The first virtual ellipse E1, the second virtual ellipse E2, and the third virtual ellipse E3 can have different focal points (shapes). For example, the first virtual ellipse E1 can have a focal point 1-1 F11 and a focal point 1-2 F12. The second virtual ellipse E2 can have a focal point 2-1 F21 and a focal point 2-2 F22. The third virtual ellipse E3 can have a focal point 3-1 F31 and a focal point 3-2 F32. In addition, the center C of the lamps 342 can coincide with the focal point 1-1 F11, the focal point 2-1 F21, and the focal point 3-1 F31.

[0090] Light reflected by the first curved surface Rl of the first protrusion 364a can be converged on a first heating position Pl where the focal point 1-2F12 and the substrate W overlap each other. Light reflected by the second curved surface R2 of the second protrusion 364b can be converged on a second heating position P2 where the focal point 2-2F22 and the substrate W overlap each other. Light reflected by the third curved surface R3 of the third protrusion 364c can be converged on a third heating position P3 where the focal point 3-2F32 and the substrate W overlap each other.

[0091] The first heating position Pl, the second heating position P2, and the third heating position P3 can be different positions in the edge region of the substrate W. Referring to Figure 13 , the first heating position Pl can be a position spaced apart from the edge of the substrate W by a first gap G1. The second heating position P2 can be a position spaced apart from the edge of the substrate W by a second gap G2. The third heating position P3 can be a position spaced apart from the edge of the substrate W by a third gap G3. The first gap G1 can be 1 mm. The second gap G2 can be 2 mm. The third gap G3 can be 4 mm. As Figure 13 indicated, when viewed from above, the first protrusion 364a, the second protrusion 364b, and the third protrusion 364c can have arc shapes and can be spaced apart from each other. Also, when viewed from above, the first protrusion 364a, the second protrusion 364b, and the third protrusion 364c can be combined together to form a circle. For example, when viewed from above, the first protrusion 364a, the second protrusion 364b, and the third protrusion 364c can have arc shapes having the same center but different diameters.

[0092] According to another embodiment of the present inventive concept, light reflected by the first protrusion 364a, the second protrusion 364b, and the third protrusion 364c can reach different positions on the substrate W. Also, as Figure 14 indicated, when the substrate W is rotated while being heated, the heating area HZ of the edge region of the substrate W is widened by the reflector 360 concentrating heat. Accordingly, the substrate processing efficiency of the edge region of the substrate W can be improved.

[0093] As described above, according to the embodiments of the present inventive concept, the support unit and the substrate processing apparatus can efficiently process the substrate.

[0094] Also, according to the embodiments of the present inventive concept, the support unit and the substrate processing apparatus can improve the uniformity of processing the substrate.

[0095] Also, according to the embodiments of the present inventive concept, the support unit and the substrate processing apparatus can improve the efficiency of processing the edge region of the substrate.

[0096] Also, according to the embodiments of the present inventive concept, the support unit and the substrate processing apparatus can improve the etching rate of the edge region of the substrate.

[0097] Effects of the inventive concept are not limited to what has been described hereinabove and any other effect which is not mentioned hereinabove can become apparent to those skilled in the art from the foregoing description and accompanying drawings.

[0098] The above description illustrates the inventive concept. Furthermore, the above-described content describes embodiments of the inventive concept, and the inventive concept can be used in various other combinations, variations, and environments. That is, the inventive concept can be changed or modified without departing from the scope of the inventive concept disclosed in the specification, the scope of equivalents of the written disclosure, and / or the scope of technology or knowledge of those skilled in the art. The written embodiments describe the best state for implementing the technical spirit of the inventive concept, and various changes required in the specific application and purpose of the inventive concept can be made. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed embodiment state. Furthermore, it is understood that the appended claims include other embodiments.

[0099] While the inventive concept has been described with reference to the embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the inventive concept. Therefore, it is to be understood that the foregoing description is not limiting, but is illustrative.

Claims

1. A support unit for supporting a substrate, the support unit comprising: a heating member; and a reflector, wherein the heating member comprises a plurality of lamps configured to emit light to heat the substrate, wherein the reflector comprises a curved surface configured to reflect thermal energy generated by the heating member toward an edge region of the substrate, wherein the reflector comprises: a base disposed below the heating member; and a protrusion protruding upward from the base, wherein the protrusion together with the base forms the curved surface facing the edge region of the substrate, wherein the protrusion is disposed between an outermost lamp among the lamps and a lamp adjacent to the outermost lamp when viewed from above, and wherein the protrusion comprises: a first protrusion comprising a first curved surface configured to reflect the thermal energy toward a first position on the edge region of the substrate; and a second protrusion comprising a second curved surface configured to reflect the thermal energy toward a second position on the edge region of the substrate, the second position being different from the first position.

2. The support unit according to claim 1, wherein the curved surface forms a portion of a virtual ellipse when the support unit is viewed from a front.

3. The support unit according to claim 2, wherein the virtual ellipse has a first focal point and a second focal point, and wherein the heating member is located at a position overlapping one of the first focal point and the second focal point when viewed from the front.

4. The support unit according to claim 3, wherein the edge region of the substrate overlaps the other one of the first focal point and the second focal point when viewed from the front.

5. The support unit according to claim 1, wherein at least some of the lamps have different annular shapes with different radii and are concentric with each other.

6. The support unit according to claim 1, wherein the first curved surface forms a portion of a first virtual ellipse when viewed from the front, and wherein the second curved surface forms a portion of a second virtual ellipse when viewed from the front, the second virtual ellipse having different focal points from the first virtual ellipse.

7. The support unit according to claim 6, wherein the support unit further comprises: a chuck configured to support the substrate; and a rotation actuator configured to rotate the chuck.

8. The support unit according to claim 7, wherein the reflector and the heating member are independent of rotation of the chuck.

9. An apparatus for processing a substrate, the apparatus comprising: a support unit configured to support the substrate; and a liquid dispensing unit configured to dispense a processing liquid onto the substrate supported on the support unit, wherein the support unit comprises: a chuck configured to support the substrate; a heating member configured to emit light to heat the substrate supported on the chuck; and a reflector disposed below the heating member, and wherein the heating member includes a plurality of lamps configured to emit light to heat the substrate, wherein the reflector includes a curved surface configured to reflect the light toward an edge region of the substrate supported on the chuck, wherein the reflector includes: a base disposed below the heating member; and a plurality of protrusions protruding upward from the base; wherein the plurality of protrusions forms, together with the base, a plurality of the curved surfaces facing the edge region of the substrate, wherein the plurality of protrusions is disposed, when viewed from above, between an outermost lamp among the lamps and a lamp adjacent to the outermost lamp, wherein the base is disposed below the heating member, and wherein the plurality of the curved surfaces reflect the light toward different locations on the substrate supported on the support unit.

10. The apparatus according to claim 9, wherein the curved surfaces form, when viewed from a front of the support unit, a portion of a virtual ellipse.

11. The apparatus according to claim 10, wherein the virtual ellipse has a first focus and a second focus, wherein a center of the heating member overlaps with one of the first focus and the second focus when viewed from the front, and wherein the edge region of the substrate supported on the chuck overlaps with the other of the first focus and the second focus when viewed from the front.

12. The apparatus according to claim 11, wherein the processing liquid includes a chemical for etching a film on the substrate, and wherein the reflector is formed of a material including at least one of aluminum, copper, quartz, gold, or silver.

13. An apparatus for processing a substrate, the apparatus comprising: a support unit configured to support the substrate; and a liquid dispensing unit configured to dispense a processing liquid onto the substrate supported on the support unit, wherein the support unit includes: a chuck configured to support the substrate; a plurality of lamps disposed within the chuck and configured to emit light to heat the substrate supported on the chuck; and a reflector configured to reflect the light toward an edge region of the substrate, wherein the reflector includes a curved surface configured to form, when viewed from a front of the support unit, a portion of a virtual ellipse having a first focus and a second focus, wherein the first focus coincides with a center of a lamp when viewed from the front, and wherein the second focus overlaps with the edge region of the substrate supported on the chuck when viewed from the front, wherein the reflector includes: a base disposed below the lamps; and a plurality of protrusions protruding upward from the base, wherein the plurality of protrusions forms, together with the base, a plurality of the curved surfaces, wherein the plurality of protrusions is disposed, when viewed from above, between an outermost lamp among the lamps and a lamp adjacent to the outermost lamp, wherein the base is disposed below the lamp, and wherein the plurality of protrusions are spaced apart from each other to form a circle when viewed from above, and wherein a plurality of the curved surfaces reflect the light towards different locations on the substrate supported on the support unit.

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