Semiconductor processing apparatus and wafer cleaning method

Abstract

The application discloses a semiconductor process equipment and a wafer cleaning method, and relates to the field of semiconductor equipment and processes. The semiconductor process equipment comprises a loading chamber, a transmission chamber, a connecting chamber, a transmission device and a cleaning device. The loading chamber is connected with the transmission chamber through the connecting chamber. The transmission device is used for transmitting a wafer from the loading chamber to the transmission chamber through the connecting chamber, and stopping at a preset cleaning station arranged in the connecting chamber when passing through the connecting chamber. The cleaning device is arranged in the connecting chamber and is used for cleaning the wafer transmitted to the cleaning station. The wafer cleaning method comprises the following steps: transmitting the wafer from the loading chamber to the cleaning station through the transmission device; cleaning the wafer through the cleaning device; and transmitting the cleaned wafer from the cleaning station to the transmission chamber through the transmission device. The application can solve the problem that the resistivity is unqualified due to impurities on the wafer surface.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor equipment and process, and particularly relates to a semiconductor process equipment and a wafer cleaning method. BACKGROUND

[0002] Chemical vapor deposition epitaxial growth is to deliver reaction gas to a reaction cavity, and make it react through heating or other methods, so that atoms are deposited on a wafer to grow a single crystal layer.

[0003] At present, some devices for growing epitaxial layers are used to perform epitaxial layer growth processes. Before the process, the wafer inevitably contacts with the outside air, so that dust and other impurities in the air adhere to the surface of the wafer, and an oxidation layer is generated in a local part of the wafer, thereby causing the wafer resistivity to be unqualified. SUMMARY

[0004] The purpose of the embodiment of the application is to provide a semiconductor process equipment and a wafer cleaning method, which can solve the problem that impurities on the surface of the wafer cause the resistivity to be unqualified.

[0005] In order to solve the above technical problems, the application is implemented as follows:

[0006] The embodiment of the application provides a semiconductor process equipment, which comprises a loading chamber, a transfer chamber, a connecting chamber, a transmission device and a cleaning device.

[0007] The loading chamber is connected with the transfer chamber through the connecting chamber, the transmission device is used for transferring a wafer from the loading chamber to the transfer chamber through the connecting chamber, and stops at a preset cleaning station arranged in the connecting chamber when passing through the connecting chamber, and the cleaning device is arranged in the connecting chamber and is used for cleaning the wafer transferred to the cleaning station.

[0008] The embodiment of the application further provides a wafer cleaning method applied to the above semiconductor process equipment, which comprises the following steps:

[0009] The wafer is transferred from the loading chamber to the cleaning station by the transmission device;

[0010] The wafer is cleaned by the cleaning device;

[0011] The wafer after cleaning is transferred from the cleaning station to the transfer chamber by the transmission device.

[0012] In the embodiment of the present application, the wafer can be transmitted between the loading chamber, the connecting chamber and the transmission chamber by the transmission device, so that the wafer is transmitted from the loading chamber to the transmission chamber through the connecting chamber, and the surface of the wafer is cleaned before the epitaxial layer growth process of the wafer, so as to ensure the cleanliness of the wafer surface. Specifically, the cleaning device is arranged in the connecting chamber, during the transmission process of the wafer, the transmission device transmits the wafer from the loading chamber to the transmission chamber through the connecting chamber, and stops at the cleaning station in the connecting chamber, and the surface of the wafer is cleaned by the cleaning device to remove the dust, oxide layer and other impurities on the surface of the wafer, so as to effectively alleviate the problem that the dust, oxide layer and other impurities enter the chamber of the epitaxial layer growth process with the wafer, and then the wafer after epitaxial growth has uniform resistivity, and the wafer resistivity is ensured to be qualified. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 A structure schematic diagram of a semiconductor process equipment disclosed in the embodiment of the present application is shown in the figure;

[0014] Figure 2 A structure schematic diagram of a cleaning device, a guide rail and a driving mechanism disclosed in the embodiment of the present application is shown in the figure;

[0015] Figure 3 A trajectory schematic diagram of the cleaning device moving along the guide rail disclosed in the embodiment of the present application is shown in the figure;

[0016] Figure 4 A structure schematic diagram of the cleaning device disclosed in the embodiment of the present application is shown in the figure;

[0017] Figure 5 A schematic diagram of the cleaning device in the starting position of the guide rail, in which the power supply wire and the air inlet pipe are in the folded state, disclosed in the embodiment of the present application is shown in the figure;

[0018] Figure 6 A schematic diagram of the cleaning device in the end position of the guide rail, in which the power supply wire and the air inlet pipe are in the stretched state, disclosed in the embodiment of the present application is shown in the figure;

[0019] Figure 7 A structure schematic diagram of the transmission device picking up the wafer disclosed in the embodiment of the present application is shown in the figure;

[0020] Figure 8 A structure schematic diagram of the semiconductor process equipment in which the transmission device is located in the transmission chamber disclosed in the embodiment of the present application is shown in the figure;

[0021] Figure 9 A structure schematic diagram of the semiconductor process equipment in which the transmission device enters the loading chamber and the transmission device blocks the light disclosed in the embodiment of the present application is shown in the figure;

[0022] Figure 10The transmission device disclosed in the embodiments of the present application picks up the wafer and makes the light pass through the structure of the semiconductor process equipment under the condition of the gap;

[0023] Figure 11 The structure schematic diagram of the semiconductor process equipment under the condition that the wafer is transmitted to the cleaning station by the transmission device disclosed in the embodiments of the present application and the wafer shields the light;

[0024] Figure 12 The flow chart of the wafer cleaning method disclosed in the embodiments of the present application;

[0025] Figure 13 The flow chart of the wafer transmission disclosed in the embodiments of the present application.

[0026] Explanation of reference signs:

[0027] 100-loading chamber;

[0028] 200-transmission chamber;

[0029] 300-connection chamber;

[0030] 400-transmission device;

[0031] 500-cleaning device; 510-cleaner; 511-housing; 5111-inlet; 5112-outlet; 512-electrode; 513-insulating layer; 520-driving mechanism; 521-power element; 522-roller; 523-controller; 530-power supply line; 540-gas inlet pipe; 550-rail; 560-first sensing element; 570-second sensing element; 580-hanging piece; 591-first stop block; 592-second stop block;

[0032] 610-light sensor; 620-reflector;

[0033] 700-wafer;

[0034] A-cleaning station; B-gap; C-ionization zone. DETAILED DESCRIPTION

[0035] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without any creative work fall within the scope of protection of the present application.

[0036] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of a kind and do not limit the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / ", generally indicates that the objects before and after are in a "or" relationship.

[0037] The embodiments of the present application will be described in detail below with reference to the accompanying drawings, specific embodiments and application scenarios.

[0038] Reference Figures 1 to 11 The embodiments of the present application disclose a semiconductor process equipment, and the disclosed semiconductor process equipment comprises a loading chamber 100, a transmission chamber 200 and a connecting chamber 300.

[0039] The loading chamber 100 can be used to accommodate the wafer 700. Optionally, when the wafer 700 is placed, the wafer 700 can be placed on a cassette first, supported by the cassette, and a plurality of wafers 700 can be placed in the cassette, and then the cassette with the plurality of wafers 700 is placed in the loading chamber 100 as a whole to realize storage of the wafer 700.

[0040] The transmission chamber 200 can function to transmit the wafer 700. Optionally, a transmission device 400 can be placed in the transmission chamber 200, and the transmission of the wafer 700 can be realized by the transmission device 400. In addition, the transmission chamber 200 can also be connected with a process chamber for epitaxial layer growth process, so as to transmit the wafer 700 to the process chamber for epitaxial layer growth process.

[0041] The connecting chamber 300 can function as a connection, and the loading chamber 100 and the transmission chamber 200 are connected through the connecting chamber 300. In the process of transmitting the wafer 700, the loading chamber 100 and the transmission chamber 200 are connected through the connecting chamber 300, so that the wafer 700 can be transmitted in the loading chamber 100, the connecting chamber 300 and the transmission chamber 200, and finally transmitted to the process chamber for epitaxial layer growth process.

[0042] The wafer 700 can be transferred between the loading chamber 100, the connecting chamber 300 and the transfer chamber 200 by the transfer device 400, and stopped at the cleaning station A arranged in the connecting chamber 300 when passing through the connecting chamber 300. Optionally, the transfer device 400 can be a robot, and the transfer device 400 can be arranged in the transfer chamber 200. During the transferring process, the transfer device 400 moves from the transfer chamber 200 to the loading chamber 100 through the connecting chamber 300, picks up the wafer 700 arranged in the loading chamber 100, and then carries the wafer 700 from the loading chamber 100 to the transfer chamber 200 through the connecting chamber 300, so as to transfer the wafer 700 to a process chamber for performing an epitaxial layer growth process.

[0043] Since the surface of the wafer 700 is easy to attach dust or form an oxide layer and other impurities, the impurities can cause the wafer 700 after the epitaxial layer growth to have an unqualified resistivity. Therefore, the wafer 700 needs to be cleaned to ensure that the wafer 700 is clean before the epitaxial layer growth process. Therefore, the semiconductor process equipment further comprises a cleaning device 500, which is used to clean the surface of the wafer 700 to ensure the cleanliness of the surface.

[0044] In some embodiments, the connecting chamber 300 is provided with the cleaning station A of the wafer 700, and the cleaning device 500 is arranged in the connecting chamber 300. Thus, during the transferring process of the wafer 700, the transfer device 400 stops the wafer 700 picked up from the loading chamber 100 at the cleaning station A, and the wafer 700 at the cleaning station A is cleaned by the cleaning device 500 to remove the dust, oxide layer and other impurities on the surface of the wafer 700, so as to ensure the cleanliness of the surface of the wafer 700.

[0045] Based on the above arrangement, since the dust, oxide layer and other impurities on the surface of the wafer 700 are cleaned, the wafer 700 is cleaner before the epitaxial layer growth process, so that the grown film is better, the probability of the wafer 700 being unqualified due to the dust, oxide layer and other impurities and forming a scrap piece is reduced, and thus the yield of the wafer 700 is improved, which is beneficial to increase the product revenue. At the same time, the wafer 700 after the epitaxial layer growth can be applied to a higher requirement process.

[0046] In order to ensure that the wafer 700 can be accurately transferred to the cleaning station A, the semiconductor process equipment further comprises a detection device, wherein the detection device is arranged in the connecting chamber 300, and the position of the wafer 700 and the transfer device 400 in the connecting chamber 300 can be detected by the detection device. The transfer device 400 transfers the wafer 700 to the cleaning station A according to the detection result of the detection device, so as to clean the wafer 700 by the cleaning device 500.

[0047] Optionally, the detection device can be some sensing elements, which can be arranged in the area corresponding to the cleaning station A, for example, the detection device is arranged above, below, or both above and below the cleaning station A, at this time, since the transmission device 400 carries the wafer 700 to transmit in the horizontal direction, the detection device neither affects the transmission of the wafer 700, nor can detect the position of the wafer 700 and the transmission device 400 in the connecting chamber 300, so as to ensure whether the wafer 700 is transmitted to the cleaning station A. After the wafer 700 is transmitted to the cleaning station A, the cleaning device 500 can be started to clean the wafer 700.

[0048] Reference Figure 1 In some embodiments, the detection device can include a light sensor 610 and a mirror 620, wherein the light sensor 610 can be used to emit and receive light signals, and the mirror 620 is used to reflect light. The light sensor 610 and the mirror 620 are arranged on both sides of the cleaning station A along a first direction perpendicular to the transmission plane of the wafer 700.

[0049] Optionally, the light sensor 610 can be arranged below the cleaning station A, and correspondingly, the mirror 620 can be arranged above the cleaning station A, and the mirror 620 can reflect the light emitted by the light sensor 610 to ensure that the light sensor 610 can receive the reflected light. Of course, the positions of the light sensor 610 and the mirror 620 can also be reversed, that is, the light sensor 610 is arranged above the cleaning station A, and the mirror 620 is arranged below the cleaning station A, and the light emitted by the light sensor 610 can also be reflected by the mirror 620.

[0050] It should be noted that the first direction can be a vertical direction; in addition, when the wafer 700 is transmitted, the surface of the wafer 700 is parallel to the horizontal plane, and at this time, the horizontal plane is the transmission plane of the wafer 700.

[0051] Based on the above arrangement, during the transmission of the wafer 700, since the transmission device 400 carries the wafer 700 to pass through the connecting chamber 300, when the wafer 700 moves to the cleaning station A, the light will be blocked to some extent, so that the light cannot be emitted to the mirror 620, at this time, the light cannot be reflected by the mirror 620 and received by the light sensor 610, so that it is determined that the wafer 700 basically reaches the cleaning station A.

[0052] In other embodiments, the detection device can further include a light emitting element and a light receiving element, wherein the light emitting element and the light receiving element are arranged at two sides of the cleaning station A along the first direction. In this way, when there is no transmission device 400 and wafer 700 between the light emitting element and the light receiving element, the light emitting element emits light, and the light receiving element receives the light. When the transmission device 400 or the wafer 700 moves between the light emitting element and the light receiving element, the light can be blocked, so that whether the wafer 700 is transported to the cleaning station A can be determined according to whether the light is blocked. It should be noted that the specific detection method of this way can refer to the detection method of the light sensor 610 and the mirror 620 described above, and will not be described here.

[0053] It should be noted that since the transmission device 400 also passes through the connecting chamber 300, when the transmission device 400 passes through the cleaning station A, the light will also be blocked. Based on this, in the embodiments of the present application, whether the wafer 700 blocks the light or the transmission device 400 blocks the light can be determined according to the moving path of the transmission device 400 and the wafer 700 and the actual situation of the light blocking. This will be described in detail below.

[0054] Reference Figure 7 In some embodiments, in order to distinguish whether the transmission device 400 blocks the light or the wafer 700 blocks the light, the transmission device 400 is designed so that when the transmission device 400 picks up the wafer 700, a gap B is formed between the transmission device 400 and the wafer 700, and the gap B can be used to pass the light. In this way, by passing the light through the gap B to the mirror 620 and then being received by the light sensor 610, the state of the transmission device 400 blocking the light and the state of the wafer 700 blocking the light can be distinguished.

[0055] In the process of transporting the wafer 700 by the transmission device 400, the transmission device 400 has a first relative position relationship, a second relative position relationship and a third relative position relationship with respect to the light sensor 610, wherein in the first relative position relationship, the transmission device 400 blocks the light emitted by the light sensor 610, in the second relative position relationship, the light emitted by the light sensor 610 passes through the gap B between the transmission device 400 and the wafer 700, and in the third relative position relationship, the wafer 700 blocks the light emitted by the light sensor 610. In this way, the transmission device 400 can continue to move in the direction of the transmission chamber 200 by a predetermined distance after the light emitted by the light sensor 610 is blocked twice, and then stop, so as to transport the wafer 700 to the cleaning station A, and when the wafer 700 is located at the cleaning station A, the center of the wafer 700 is located in the direction of the light emitted by the light sensor 610.

[0056] Based on the above settings, the process of the transport device 400 transporting the wafer 700 is as follows:

[0057] In the initial state, the transport device 400 is in a static state and is not arranged in the connecting chamber 300 (wherein the transport device 400 can be arranged in the transport chamber 200), at this time, the light emitted by the light sensor 610 is not blocked, as shown in Figure 8 ;

[0058] After starting the transport device 400, the transport device 400 moves into the connecting chamber 300 and passes through the cleaning station A, at this time, the transport device 400 first blocks the light emitted by the light sensor 610, thereby the approximate position of the transport device 400 in the connecting chamber 300 can be obtained, as shown in Figure 9 .

[0059] When the transport device 400 moves to the loading chamber 100 and picks up the wafer 700, the transport device 400 can continue to block the light, or can unblock the light when picking up the wafer 700, the size and shape of the transport device 400 can be designed according to the actual situation. In the embodiment of the present application, the transport device 400 is in the state of blocking the light during the process of passing through the cleaning station A to picking up the wafer 700.

[0060] After picking up the wafer 700, the transport device 400 carries the wafer 700 back, when the gap B between the transport device 400 and the wafer 700 is aligned with the line connecting the light sensor 610 and the mirror 620, the light can pass through the gap B, be incident to the mirror 620, and be returned by the mirror 620, and be received by the light sensor 610 again, thereby the position of the wafer 700 and the transport device 400 can be obtained, as shown in Figure 10 .

[0061] As the transport device 400 continues to carry the wafer 700 back (i.e., moves in the direction away from the loading chamber 100), the wafer 700 will block the light, at this time, it can be determined that the wafer 700 starts to be transported to the cleaning station A, after a period of time or a preset distance is transported, the wafer 700 is completely transported to the cleaning station A, as shown in Figure 11 .

[0062] Start the cleaning device 500 to clean the surface of the wafer 700 comprehensively, so as to remove the impurities such as dust and oxide layer attached to the surface of the wafer 700, thereby keeping the wafer 700 clean, so as to prepare for the subsequent epitaxial layer growth process of the wafer 700.

[0063] It should be noted that when the light is aligned with the gap B, the wafer 700 will block the light as the conveying device 400 continues to return with the wafer 700. In order to convey the wafer 700 to the cleaning station A completely, i.e. in order to align the center of the wafer 700 with the light emitted by the light sensor 610, the conveying device 400 continues to move a preset distance with the wafer 700 after the wafer 700 blocks the light, so that the center of the wafer 700 is located in the direction of the light emitted by the light sensor 610. Of course, a preset time can also be moved, and the preset distance can be calculated according to the moving speed of the conveying device 400 and the radius of the wafer 700. In this way, the wafer 700 can be accurately conveyed to the cleaning station A to prepare for cleaning the wafer 700.

[0064] Reference Figure 1 In order to ensure the cleaning efficiency and ensure the cleaning comprehensiveness, the cleaning device 500 comprises a guide rail 550, a driving mechanism 520 and a cleaner 510. The guide rail 550 is arranged in the connecting chamber 300, the cleaner 510 is movably connected with the guide rail 550 and is used for spraying cleaning medium to the wafer 700, and the driving mechanism 520 is used for driving the cleaner 510 to move along the guide rail 550.

[0065] Optionally, the guide rail 550 can be fixed to the inner side of the top wall of the connecting chamber 300, for example, by a fastening screw.

[0066] Reference Figure 2 and Figure 3 Optionally, the guide rail 550 can have a meandering structure, so that the cleaner 510 can move in a meandering manner. Of course, the guide rail 550 can also have a spiral structure, so that the cleaner 510 can move in a spiral manner. Based on this, the cleaning area can be expanded to ensure that the entire surface of the wafer 700 is cleaned. In addition, the guide rail 550 can also have other shapes, and the embodiments of the present application do not limit the specific shape of the guide rail 550.

[0067] Since the cleaner 510 can move along the guide rail 550, the cleaner 510 can be moved in a preset direction to clean the surface of the wafer 700 by the cleaner 510.

[0068] Reference Figure 3 In order to identify the position of the cleaner 510 on the guide rail 550, the first sensing element 560 is arranged at the first end of the guide rail 550, and the first sensing element 560 is triggered when the cleaner 510 moves to the first end of the guide rail 550. Optionally, the first sensing element 560 is located at the starting position of the guide rail 550, and whether the cleaner 510 is located at the initial position can be detected by the first sensing element 560, so as to determine whether the cleaning work starts.

[0069] In order to identify the position of the cleaning device 510 on the guide rail 550, the second sensing element 570 is arranged at the second end of the guide rail 550, and the second sensing element 570 is triggered when the cleaning device 510 moves to the second end of the guide rail 550. Optionally, the second sensing element 570 is arranged at the terminal position of the guide rail 550, and the cleaning device 510 can be detected at the terminal position by the second sensing element 570, so as to determine whether the cleaning work is completed.

[0070] Based on the above arrangement, before the wafer 700 is cleaned, the cleaning device 510 is arranged at the starting position of the guide rail 550; after the cleaning work is started, the cleaning device 510 moves away from the starting position and moves to the terminal position along the guide rail 550, and at this time, the first sensing element 560 cannot identify the cleaning device 510. In this process, the cleaning device 510 cleans the surface of the wafer 700 to remove the dust, oxide layer and other impurities on the surface of the wafer 700; when the cleaning device 510 reaches the terminal position, it is detected by the second sensing element 570, indicating that the cleaning work is completed, so as to prepare for the subsequent transmission of the wafer 700.

[0071] Optionally, the first sensing element 560 and the second sensing element 570 can be position sensors, and both of them can be electrically connected with the control system of the semiconductor process equipment to realize the transmission of signals.

[0072] With reference to the above description, Figure 3 In order to prevent the cleaning device 510 from falling off the guide rail 550 during the movement, the first stop block 591 can be arranged at the starting position of the guide rail 550, and the second stop block 592 can be arranged at the terminal position of the guide rail 550, so as to limit the cleaning device 510 from falling off the two ends of the guide rail 550.

[0073] With reference to the above description, Figure 2 In some embodiments, the driving mechanism 520 can include a power element 521 and a roller 522, the power element 521 is in transmission connection with the roller 522, the roller 522 is rotatably arranged on the cleaning device 510, and the roller 522 is cooperatively arranged with the guide rail 550, and the power element 521 is used to drive the roller 522 to rotate to drive the cleaning device 510 to move along the guide rail 550.

[0074] Optionally, the cross section of the guide rail 550 can be concave, and the guide rail 550 has a guide cavity, and the bottom wall of the guide cavity is provided with a guide hole along the extension direction of the guide rail 550.

[0075] In addition, the cleaner 510 can further be provided with a mounting rack, a cross section of the mounting rack can be T-shaped, a bottom end of the mounting rack is connected with the shell 511 of the cleaner 510, top ends of the mounting rack are respectively provided with the rollers 522, and the top ends of the mounting rack are located in the guide cavity, the bottom end of the mounting rack extends downward through the guide hole, and the rollers 522 on the two sides are supported by the bottom wall of the guide cavity. In this way, the rollers 522 can roll along the bottom wall of the guide cavity, so that the cleaner 510 moves along the extension direction of the guide rail 550.

[0076] Optionally, the power element 521 can be an electric machine, the electric machine is arranged on the mounting rack, a rotating shaft of the electric machine is in driving connection with the at least one roller 522, so as to drive the roller 522 to rotate; and the mounting rack is further provided with a controller 523, the controller 523 is connected with the electric machine through wires, so as to control the electric machine.

[0077] In order to meet the cleaning requirement, the wafer 700 can be cleaned by using a plasma method. In this way, the cleaner 510 can be selected as a plasma emitter. The cleaning principle is that a radio frequency power source generates high-energy disordered plasma in a vacuum cavity under a certain pressure, and then the plasma bombards the surface of the wafer 700, so as to achieve the cleaning purpose.

[0078] Reference Figure 4 In some embodiments, the cleaner 510 includes a shell 511 and an electrode 512, one end of the shell 511 is connected with an air inlet pipe 540, the air inlet pipe 540 can be connected with an inlet 5111 at one end of the shell 511, the air inlet pipe 540 is used for introducing cleaning gas into the shell 511, the other end of the shell 511 is provided with an outlet 5112, and the electrode 512 is arranged in the shell 511 and used for ionizing the gas introduced into the shell 511 into plasma. Since the electrode 512 is located between the inlet 5111 and the outlet 5112, an ionization zone C can be formed between the electrode 512 and the outlet 5112 under the electrification of the electrode 512, so as to ionize the gas introduced into the shell 511 to form the plasma.

[0079] Optionally, the shell 511 can include a stainless steel outer wall, an insulating layer 513 is arranged on the inner side of the stainless steel outer wall, and the ionized particles cannot contact the stainless steel outer wall through the insulating layer 513, so that the plasma generated by ionization can be shot out of the outlet 5112.

[0080] Optionally, the air inlet pipe 540 can be connected with an external gas supply device, the gas is introduced into the inner cavity of the shell 511 through the inlet 5111 by the gas supply device, the gas is ionized when passing through the ionization zone C, and then the plasma is sprayed out of the outlet 5112, so that the plasma is sprayed to the surface of the wafer 700, and the surface of the wafer 700 is cleaned by the plasma.

[0081] It should be noted that the plasma emitted by the plasma emitter can fill the surrounding area of the wafer 700, thereby cleaning the entire surface of the wafer 700.

[0082] Referring to Figure 4 In order to supply power to the driving mechanism 520 and the electrode 512, the cleaning device 500 further comprises a power supply line 530 electrically connected to the driving mechanism 520 and the electrode 512 respectively, and the other end of the power supply line 530 is electrically connected to a power supply device, so that the power supply device can supply power to the driving mechanism 520 and the electrode 512 through the power supply line 530, thereby providing power for the movement of the cleaner 510 and the ionized gas.

[0083] Since the cleaner 510 needs to move along the guide rail 550, the power supply line 530 and the gas inlet pipe 540 will move with the cleaner 510, which is easy to cause interference between parts, for example, at least one of the power supply line 530 or the gas inlet pipe 540 is blocked by other parts, and with the movement of the cleaner 510, at least one of the power supply line 530 or the gas inlet pipe 540 will be damaged, affecting the cleaning process.

[0084] Referring to Figure 5 and Figure 6 A plurality of hangers 580 are connected to the guide rail 550, and the hangers 580 are arranged at intervals along the extension direction of the guide rail 550. Since the hangers 580 are in sliding connection with the guide rail 550, the hangers 580 can move along the extension direction of the guide rail 550 to adjust the distance between adjacent hangers 580. The power supply line 530 of the driving mechanism 520, the power supply line 530 of the electrode 512 and the gas inlet pipe 540 are all hung in the connection chamber 300 through the plurality of hangers 580.

[0085] Based on the above setting, when the cleaner 510 moves along the guide rail 550, the cleaner 510 will exert a traction force on the power supply lines 530 of the driving mechanism 520, the power supply lines 530 of the electrodes 512 and the air inlet pipe 540, driving the two power supply lines 530 and the air inlet pipe 540 to move together with the cleaner 510. At this time, the hangers 580 are also moved along the guide rail 550 under the action of the force exerted by the two power supply lines 530 and the air inlet pipe 540. When the cleaner 510 moves to the terminal position of the guide rail 550, the two power supply lines 530 and the air inlet pipe 540 are in an extended state, and at this time, the plurality of hangers 580 are in a separated state, that is, the distance between adjacent two hangers 580 is far. When the cleaner 510 moves to the starting position of the guide rail 550, the two power supply lines 530 and the air inlet pipe 540 are in a folded state, and at this time, the plurality of hangers 580 are in a folded state, that is, the distance between adjacent two hangers 580 is close. In this way, during the movement of the cleaner 510 along the guide rail 550, the two power supply lines 530 and the air inlet pipe 540 are always hung by the plurality of hangers 580, so that the movement of the cleaner 510 in the connecting chamber 300 is not disturbed, and at the same time, it is ensured that the two power supply lines 530 and the air inlet pipe 540 will not sag to the bottom of the connecting chamber 300.

[0086] In summary, the semiconductor process equipment disclosed in the embodiments of the present application can effectively alleviate the problem that dust, oxide layer and other impurities enter the process chamber of the epitaxial layer growth process along with the wafer 700, thereby making the wafer 700 after epitaxial growth have uniform resistivity and ensuring the eligibility of the wafer 700 resistivity.

[0087] In addition, the present application also discloses a wafer cleaning method which can be applied to the above-mentioned semiconductor process equipment to clean the wafer and ensure the cleanliness of the wafer surface.

[0088] Reference Figure 12 The disclosed wafer cleaning method comprises:

[0089] S10: transmitting the wafer from the loading chamber to the cleaning station by the transmission device;

[0090] S20: cleaning the wafer by the cleaning device;

[0091] S30: transmitting the cleaned wafer from the cleaning station to the transmission chamber by the transmission device.

[0092] Optionally, in the initial state, the transmission device can be located in the transmission chamber. When it is necessary to transmit the wafer, the transmission device is moved from the transmission chamber to the loading chamber through the connecting chamber to pick up the wafer in the loading chamber. After the transmission device picks up the wafer, it returns from the loading chamber to the connecting chamber to transmit the wafer from the loading chamber to the cleaning station in the connecting chamber, preparing for subsequent cleaning of the wafer.

[0093] After the wafer is completely transported to the cleaning station, the cleaning device is started to clean the wafer by the cleaning device. Alternatively, the cleaning device can emit plasma to clean the wafer by plasma; in addition, the cleaning device can also move in the connecting chamber to facilitate the all-round cleaning of the surface of the wafer. It should be noted that the specific structure and cleaning principle of the cleaning device can refer to the related contents of the above semiconductor process equipment, which will not be described here.

[0094] In order to perform an epitaxial layer growth process on the wafer, the semiconductor process equipment can also include a process chamber, and the wafer after cleaning is transported to the transfer chamber for subsequent transmission to the process chamber for epitaxial layer growth process.

[0095] In the embodiment of the application, the wafer is cleaned before the epitaxial layer growth process to remove dust, oxide layer and other impurities on the surface of the wafer, so as to prevent dust, oxide layer and other impurities from affecting the epitaxial layer growth process, thereby making the wafer after epitaxial growth have uniform resistivity and ensuring the eligibility of the wafer resistivity.

[0096] Alternatively, the semiconductor process equipment can include a detection device arranged in the connecting chamber, the detection device including a light sensor and a mirror, wherein the light sensor and the mirror are arranged on both sides of the cleaning station along a first direction perpendicular to the transmission plane of the wafer. In addition, a gap is formed between the transmission device and the wafer when the transmission device picks up the wafer.

[0097] Based on the above arrangement, referring to Figure 13 , the step S10 of transporting the wafer from the loading chamber to the cleaning station by the transmission device includes:

[0098] S101: The transmission device moves from the transfer chamber to the loading chamber through the connecting chamber and picks up the wafer, in which process the transmission device blocks the light emitted by the light sensor;

[0099] S102: The transmission device carries the wafer from the loading chamber to the connecting chamber and aligns the gap with the light emitted by the light sensor, at this time, the light emitted by the light sensor passes through the gap, and the light reflected by the mirror is received by the light sensor;

[0100] S103: The transmission device continues to move away from the loading chamber with the wafer and transports the wafer to the cleaning station, at this time, the wafer blocks the light emitted by the light sensor.

[0101] Therefore, by using the light sensor and the mirror together, the position of the transmission device and the wafer can be detected to ensure that the wafer can be transported to the cleaning station.

[0102] Optionally, the cleaning device can comprise a guide rail arranged in the connecting chamber; and the cleaning device comprises a cleaner for emitting plasma, the cleaner being slidingly connected to the guide rail.

[0103] Based on the above arrangement, in the embodiment of the present application, the step S20 of cleaning the wafer by the cleaning device comprises:

[0104] The cleaner moves along the guide rail and emits plasma to the wafer to clean the surface of the wafer by the plasma.

[0105] The guide rail can make the cleaner move along a preset track, so that the plasma emitted by the cleaner can clean the surface of the entire wafer in all directions, thereby expanding the cleaning range and improving the cleaning efficiency.

[0106] Optionally, a first sensing element is arranged at the first end of the guide rail, and a second sensing element is arranged at the second end of the guide rail, so that the first sensing element and the second sensing element can detect the position of the cleaner on the guide rail. When the cleaner moves to the first end of the guide rail, the first sensing element is triggered, and when the cleaner moves to the second end of the guide rail, the second sensing element is triggered.

[0107] Based on the above arrangement, in the embodiment of the present application, before cleaning the wafer, the position of the cleaner is detected by the first sensing element to determine whether the cleaner is located at the starting position at one end of the guide rail; and during the cleaning process of the wafer, the position of the cleaner is detected by the second sensing element to determine whether the cleaner is located at the ending position at the other end of the guide rail.

[0108] Therefore, the first sensing element and the second sensing element can be used to determine whether the cleaning work starts and ends, respectively, so as to realize automatic cleaning.

[0109] Optionally, a door valve that can be opened and closed is arranged between the connecting chamber and the loading chamber.

[0110] Based on the above arrangement, in the embodiment of the present application, before the step of transferring the wafer from the loading chamber to the cleaning station by the transferring device, the wafer cleaning method comprises:

[0111] The wafer is placed in the loading chamber, the door valve is closed, the loading chamber is evacuated, and nitrogen is filled into the loading chamber, so that the pressure in the loading chamber is consistent with the pressure in the connecting chamber and the transferring chamber that are in communication with each other.

[0112] It can be understood that the connecting chamber and the loading chamber are isolated by a door valve, and the connecting chamber and the conveying chamber are in communication with each other. After the wafer is placed in the loading chamber, the loading chamber needs to be pumped to a vacuum state, and then nitrogen is filled to keep the pressure in the loading chamber consistent with that in the connecting chamber and the conveying chamber, and then the door valve is opened. Then, the conveying device picks up the wafer, and after the wafer leaves the loading chamber, the door valve is closed. At the same time, nitrogen is filled into the conveying chamber in real time, and the gas in the conveying chamber is pumped away to keep the pressure in the conveying chamber constant. Based on this, the flowing gas can carry away the impurities generated during the cleaning of the wafer to ensure that the wafer surface will not be attached to impurities.

[0113] As can be seen from the above, the specific principle of the wafer cleaning method in the embodiment of the application is:

[0114] In the initial state, the conveying device is located in the conveying chamber, at this time, the light emitted by the light sensor is not blocked, that is, the light sensor can receive the light signal reflected back by the reflector; when the conveying device moves to the loading chamber, it will pass through the connecting chamber, at this time, the conveying device will block the light emitted by the light sensor (the arm of the conveying device can block the light); when the conveying device picks up the wafer and returns to the connecting chamber direction, at the initial stage of return, the conveying device blocks the light at all times, as the conveying device continues to return, since a gap is formed between the conveying device and the picked-up wafer, when the gap passes above the light sensor (i.e., aligned in the vertical direction), the light sensor again receives the light signal reflected back by the reflector; as the conveying device continues to return with the wafer, the wafer will block the light; before the conveying device carrying the wafer returns to the conveying chamber, the conveying device will stay in the connecting chamber for a period of time, at this time, the center of the wafer is aligned with the light emitted by the light sensor, at this time, it is determined that the wafer is located at the cleaning station, at this time, the wafer cleaning can be started.

[0115] When the light sensor receives the signal blocked twice (i.e., the wafer blocks the light, and the center of the wafer is aligned with the light), the cleaner moves to the starting position at one end of the guide rail, and when the first sensing element detects that the cleaner is located at the starting position, it indicates that the cleaner is in place and the cleaning process starts.

[0116] As the cleaner moves along the guide rail, when the cleaner moves to the end position at the other end of the guide rail, the second sensing element detects that the cleaner is located at the end position, indicating that the cleaning process is complete, at this time, the cleaner stops working and returns to the starting position, and at the same time, the conveying device transports the wafer into the conveying chamber for the next process.

[0117] As described above, the embodiment of the application cleans the wafer before the epitaxial layer growth process to ensure the cleanliness of the wafer surface, reduces the unqualified rate of wafer resistivity, and improves the yield.

[0118] The embodiments of the present application are described above with reference to the accompanying drawings, but the present application is not limited to the above-described specific embodiments, and the above-described specific embodiments are merely illustrative, but not restrictive, and a person of ordinary skill in the art can make many forms under the inspiration of the present application without departing from the purpose of the present application and the scope protected by the claims.

Claims

1. A semiconductor process apparatus, characterized in that, include: Loading chamber, transfer chamber, connecting chamber, transfer device, and cleaning device; The loading chamber and the transmission chamber are connected via the connecting chamber; The transmission device is located in the transmission chamber and moves between the loading chamber, the connecting chamber and the transmission chamber. It is used to transmit the wafer from the loading chamber to the transmission chamber through the connecting chamber and stops at a preset cleaning station located in the connecting chamber when passing through the connecting chamber. The cleaning device is disposed in the connecting chamber and is used to move and emit plasma within the connecting chamber to clean the wafer carried by the transport device that is stopped at the cleaning station.

2. The semiconductor process equipment according to claim 1, characterized in that, The semiconductor process equipment also includes a detection device disposed in the connection chamber. The detection device is used to detect at least the positions of the wafer and the transfer device in the connection chamber. The transfer device transfers the wafer to the cleaning station according to the detection result of the detection device.

3. The semiconductor process equipment according to claim 2, characterized in that, The detection device includes a light sensor for emitting and receiving light, and a reflector for reflecting light. The light sensor and the reflector are arranged at intervals on both sides of the cleaning station along a first direction, which is perpendicular to the transmission plane of the wafer.

4. The semiconductor process equipment according to claim 3, characterized in that, When the transmission device picks up the wafer, a gap is formed between the transmission device and the wafer; During the process of the transmission device transmitting the wafer, the transmission device has a first relative positional relationship, a second relative positional relationship, and a third relative positional relationship with respect to the light sensor. In the first relative positional relationship, the transmission device blocks the light emitted by the light sensor. In the second relative positional relationship, the light emitted by the light sensor passes through the gap. In the third relative positional relationship, the wafer blocks the light emitted by the light sensor. The transmission device is used to continue moving a preset distance toward the transmission chamber after the light emitted by the light sensor is blocked twice, and then stop, so as to transmit the wafer to the cleaning station. When the wafer is located at the cleaning station, the center of the wafer is located in the direction of the light emitted by the light sensor.

5. The semiconductor process equipment according to claim 1, characterized in that, The cleaning device includes a guide rail, a drive mechanism, and a cleaner. The guide rail is disposed in the connecting chamber, and the cleaner is movably connected to the guide rail for spraying cleaning medium onto the wafer. The drive mechanism is used to drive the cleaner to move along the guide rail.

6. The semiconductor process equipment according to claim 5, characterized in that, The first end of the guide rail is provided with a first stop and a first sensing element, and the second end of the guide rail is provided with a second stop and a second sensing element. The first stop and the second stop are used to prevent the cleaner from falling off the guide rail. When the cleaner moves to the first end, the first sensing element is triggered, and when the cleaner moves to the second end, the second sensing element is triggered.

7. The semiconductor process equipment according to claim 5, characterized in that, The drive mechanism includes a power element and a roller. The power element is connected to the roller in a transmission manner. The roller is rotatably mounted on the cleaner and is installed in conjunction with the guide rail. The power element is used to drive the roller to rotate so as to move the cleaner along the guide rail.

8. The semiconductor process equipment according to claim 5, characterized in that, The cleaner includes a housing and electrodes; One end of the housing is connected to an air inlet pipe for introducing cleaning gas into the housing. The other end of the housing is provided with an outlet. The electrode is disposed inside the housing to ionize the gas introduced into the housing into plasma.

9. The semiconductor process equipment according to claim 8, characterized in that, Multiple hangers are spaced apart along the extension direction of the guide rail, and the multiple hangers are slidably connected to the guide rail. The power supply line of the drive mechanism, the power supply line of the electrode, and the air intake pipe are all suspended in the connecting chamber through the multiple hangers.

10. A wafer cleaning method, applied to the semiconductor process equipment according to any one of claims 1 to 9, characterized in that, The wafer cleaning method includes the following steps: The wafer is transferred from the loading chamber to the cleaning station via the transfer device. The wafer is cleaned using the cleaning device. The cleaned wafer is transferred from the cleaning station to the transfer chamber via the transfer device.

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