Semiconductor device manufacturing method, substrate processing method, substrate processing device and recording medium

Abstract

The invention has the steps of repeatedly performing the following (a) and (b): (a) performing a process step, in which a process gas is supplied into a heated processing container containing a substrate and the substrate is processed; and (b) performing a cleaning process step, in which a cleaning gas is supplied into a heated processing container not containing a substrate and the processing container is cleaned, and the time from the end of (b) to the start of (a) is set to be less than the time from the end of (a) to the start of (b).

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a semiconductor device, a substrate processing method, a substrate processing apparatus, and a recording medium. Background Art

[0002] As a process in the manufacturing process of a semiconductor device, the following processes are sometimes repeated: a process of supplying a processing gas into a processing container that accommodates a substrate to process a substrate; and a process of supplying a cleaning gas into a processing container that does not accommodate a substrate to clean the processing container (for example, see patent document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2002-222805 Summary of the invention

[0006] Problems to be solved by the invention

[0007] An object of the present disclosure is to improve the characteristics of a film formed on a substrate.

[0008] Means for solving problems

[0009] According to one embodiment of the present disclosure, the following technology is provided, which comprises repeatedly performing the following steps (a) and (b):

[0010] (a) performing a process in which a process gas is supplied into a heated processing container containing a substrate and the substrate is processed;

[0011] (b) performing a cleaning process, in which a cleaning gas is supplied into the heated processing container that does not contain the substrate, and the processing container is cleaned.

[0012] The time from the end of (b) to the start of (a) is set to be less than the time from the end of (a) to the start of (b).

[0013] Effects of the Invention

[0014] According to the present disclosure, the characteristics of a film formed on a substrate can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and is a diagram showing a processing furnace portion in a longitudinal cross-sectional view.

[0016] Figure 2A schematic diagram of a vertical processing furnace of a substrate processing device preferably used in one embodiment of the present disclosure is shown in FIG. Figure 1 The AA line cross-sectional view shows a portion of the processing furnace.

[0017] Figure 3 This is a schematic configuration diagram of a controller of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and is a diagram showing a control system of the controller in the form of a block diagram.

[0018] Figure 4 (a) is a diagram schematically showing a substrate processing sequence in one embodiment of the present disclosure, Figure 4 (b) is a diagram schematically showing the substrate processing sequence in the reference example. DETAILED DESCRIPTION

[0019] <One Mode of the Present Disclosure>

[0020] Below, for one method of the present disclosure, mainly using Figure 1 to Figure 4 (a) is described below.

[0021] (1) Configuration of substrate processing apparatus

[0022] like Figure 1 As shown, the processing furnace 202 has a heater 207 as a heating mechanism (temperature adjustment unit). The heater 207 is cylindrical and is vertically assembled by being supported by a holding plate. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the gas by heat.

[0023] On the inner side of the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is composed of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is composed of a metal material such as stainless steel (SUS), and is formed into a cylindrical shape with an upper end and a lower end open. The upper end of the manifold 209 is configured in a manner that engages with the lower end of the reaction tube 203 and supports the reaction tube 203. Between the manifold 209 and the reaction tube 203, an O-ring 220a as a sealing member is provided. The reaction tube 203 is vertically assembled in the same manner as the heater 207. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the hollow portion of the cylinder of the processing container. The processing chamber 201 is configured to accommodate a wafer 200 as a substrate. In the processing chamber 201, the wafer 200 is processed.

[0024] In the processing chamber 201, nozzles 249a and 249b are respectively provided as the first supply part and the second supply part in a manner penetrating the side wall of the manifold 209. The nozzles 249a and 249b are also referred to as the first nozzle and the second nozzle, respectively. The nozzles 249a and 249b are each made of a non-metallic material such as quartz or SiC as a heat-resistant material. The nozzles 249a and 249b are each configured as a common nozzle used in the supply of a plurality of gases.

[0025] Gas supply pipes 232a and 232b as the first and second pipes are connected to the nozzles 249a and 249b, respectively. The gas supply pipes 232a and 232b are each configured as a common pipe used for supplying a plurality of gases. Mass flow controllers (MFCs) 241a and 241b as flow controllers (flow control units) and valves 243a and 243b as opening and closing valves are provided in order from the upstream side of the gas flow on the gas supply pipes 232a and 232b, respectively. Gas supply pipes 232c and 232d are connected to the gas supply pipe 232a on the downstream side of the valve 243a. MFCs 241c and 241d and valves 243c and 243d are provided in order from the upstream side of the gas flow on the gas supply pipes 232c and 232d, respectively. Gas supply pipe 232e is connected to the gas supply pipe 232b on the downstream side of the valve 243b. The gas supply pipe 232e is provided with an MFC 241e and a valve 243e in order from the upstream side of the gas flow. The gas supply pipes 232a to 232e are made of a metal material such as SUS.

[0026] like Figure 2 As shown, the nozzles 249a and 249b are respectively arranged in a circular ring-shaped space between the inner wall of the reaction tube 203 and the wafer 200 in a top view in a manner of standing from the lower part of the inner wall of the reaction tube 203 along the upper part and toward the upper side of the arrangement direction of the wafer 200. That is, the nozzles 249a and 249b are respectively arranged along the wafer arrangement area in the area on the side of the wafer arrangement area where the wafer 200 is arranged. Gas supply holes 250a and 250b for supplying gas are respectively provided on the side of the nozzles 249a and 249b. The gas supply holes 250a and 250b are opened in a manner of facing the center of the wafer 200 in a top view, and gas can be supplied toward the wafer 200. A plurality of gas supply holes 250a and 250b are provided in the range from the lower part to the upper part of the reaction tube 203.

[0027] A silane-based gas, for example, containing silicon (Si) (which is the main element constituting the film formed on the wafer 200) is supplied from the gas supply pipe 232a through the MFC 241a, the valve 243a, and the nozzle 249a into the processing chamber 201 as a processing gas (raw material gas). The so-called raw material gas refers to a raw material in a gaseous state, for example, a gas obtained by gasifying a raw material in a liquid state at normal temperature and pressure, a raw material in a gaseous state at normal temperature and pressure, etc. As the silane-based gas, for example, monosilane (SiH4, abbreviated as: MS) gas, which is a silicon hydride gas, can be used.

[0028] From the gas supply pipe 232b, a gas containing, for example, impurities (dopants) is supplied as a dopant gas into the processing chamber 201 through the MFC 241b, the valve 243b, and the nozzle 249b. As the dopant gas, a gas containing any one of the group III elements (group 13 elements) and the group V elements (group 15 elements) can be used, for example, a phosphine (PH3, abbreviated as: PH) gas containing phosphorus (P) as a group V element.

[0029] From the gas supply pipe 232c, a halogen-containing gas is supplied as a cleaning gas into the processing chamber 201 through the MFC 241c, the valve 243c, the gas supply pipe 232a, and the nozzle 249a. Halogen includes chlorine (Cl), fluorine (F), bromine (Br), iodine (I), etc. As the halogen-containing gas, for example, fluorine (F2) gas as a F-containing gas can be used.

[0030] Nitrogen (N2) gas is supplied as an inert gas from gas supply pipes 232d and 232e through MFCs 241d and 241e, valves 243d and 243e, gas supply pipes 232a and 232b, and nozzles 249a and 249b into the processing chamber 201. The N2 gas functions as a purge gas, a carrier gas, a dilution gas, and the like.

[0031] The processing gas supply system (raw gas supply system) is mainly composed of the gas supply pipe 232a, MFC241a, and valve 243a. The dopant gas supply system is mainly composed of the gas supply pipe 232b, MFC241b, and valve 243b. It can be considered that the dopant gas supply system is included in the processing gas supply system. The cleaning gas supply system is composed of the gas supply pipe 232c, MFC241c, and valve 243c. The inactive gas supply system is mainly composed of the gas supply pipes 232d, 232e, MFC241d, 241e, valves 243d, 243e.

[0032] Any or all of the various supply systems described above may be configured as an integrated supply system 248 in which valves 243a to 243e, MFCs 241a to 241e, etc. are integrated. The integrated supply system 248 is connected to each of the gas supply pipes 232a to 232e, and is configured to control the supply of various gases to the gas supply pipes 232a to 232e, i.e., the opening and closing of the valves 243a to 243e, the flow rate adjustment of the MFCs 241a to 241e, etc., by using the controller 121 described later. The integrated supply system 248 is configured as an integrated unit of an integral type or a separate type, and is configured to be detachable as an integrated unit unit relative to the gas supply pipes 232a to 232e, etc., and to be maintained, replaced, or added as an integrated unit unit.

[0033] An exhaust port 231a for exhausting the atmosphere in the processing chamber 201 is provided below the side wall of the reaction tube 203. The exhaust port 231a may be provided from the lower part of the side wall of the reaction tube 203 along the upper part, that is, along the wafer arrangement area. An exhaust pipe 231 is connected to the exhaust port 231a. The exhaust pipe 231 is made of a metal material such as SUS. A vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure regulating unit). The APC valve 244 is a valve configured in the following manner: by opening and closing the valve while the vacuum pump 246 is in operation, the vacuum exhaust in the processing chamber 201 and the vacuum exhaust stop can be performed, and by adjusting the valve opening based on the pressure information detected by the pressure sensor 245 while the vacuum pump 246 is in operation, the pressure in the processing chamber 201 can be adjusted. The exhaust system is mainly composed of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. It is also conceivable to include a vacuum pump 246 in the exhaust system.

[0034] Below the manifold 209, a sealing cover 219 as a furnace port cover body capable of hermetically closing the lower end opening of the manifold 209 is provided. The sealing cover 219 is made of a metal material such as SUS and is formed in a disc shape. On the upper surface of the sealing cover 219, an O-ring 220b as a sealing component abutting against the lower end of the manifold 209 is provided. Below the sealing cover 219, a rotating mechanism 267 for rotating the wafer boat 217 described later is provided. The rotating shaft 255 of the rotating mechanism 267 is made of a metal material such as SUS, penetrates the sealing cover 219 and is connected to the wafer boat 217. The rotating mechanism 267 is configured in such a way that the wafer 200 is rotated by rotating the wafer boat 217. The sealing cover 219 is configured in such a way that it is lifted and lowered in the vertical direction by the wafer boat elevator 115 as a lifting mechanism provided outside the reaction tube 203. The boat elevator 115 is configured as a transport system (transport mechanism) that carries the wafer 200 into and out of the processing chamber 201 by raising and lowering the sealing cap 219 .

[0035] Below the manifold 209, a gate 219s is provided as a furnace cover, which can close the lower end opening of the manifold 209 in an airtight manner when the sealing cover 219 is lowered and the wafer boat 217 is moved out of the processing chamber 201. The gate 219s is made of a metal material such as SUS and is formed in a disc shape. An O-ring 220c is provided on the upper surface of the gate 219s as a sealing member that abuts against the lower end of the manifold 209. The opening and closing action (lifting action, rotation action, etc.) of the gate 219s is controlled by the gate opening and closing mechanism 115s.

[0036] The wafer boat 217 as a substrate support is configured as follows: a plurality of wafers 200 (e.g., 25 to 200) are arranged in a horizontal posture and in a state where the centers are aligned with each other in a vertical direction, and the wafers 200 are supported in multiple layers, that is, the plurality of wafers 200 are arranged at intervals. The wafer boat 217 is made of a heat-resistant material such as quartz, SiC, etc. A heat insulation plate 218 made of a heat-resistant material such as quartz, SiC, etc. is supported in multiple layers at the bottom of the wafer boat 217.

[0037] A temperature sensor 263 as a temperature detector is provided in the reaction tube 203. The temperature in the processing chamber 201 is adjusted to a desired temperature distribution by adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.

[0038] like Figure 3As shown, the controller 121 as a control unit (control means) is configured in the form of a computer having a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured so as to be able to exchange data with the CPU 121a via an internal bus 121e. The controller 121 is connected to an input / output device 122 configured in the form of, for example, a touch panel.

[0039] The storage device 121c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. In the storage device 121c, a control program for controlling the action of the substrate processing device, a process having the steps and conditions of the film formation described later, a cleaning process having the steps and conditions of the cleaning described later, etc. are stored in a readable manner. The process is composed of a method that enables the controller 121 to execute each step in the film formation described later and obtain a specified result, and functions as a program. The cleaning process is composed of a method that enables the controller 121 to execute each step in the cleaning described later and obtain a specified result, and functions as a program. Hereinafter, the process, cleaning process, control program, etc. are also collectively referred to as programs. In addition, the process and cleaning process are also referred to as processes. In the case of using the term "program" in this specification, there is a case where only the process is included, only the control program is included, or both are included. The RAM 121 b is configured as a storage area (work area) that temporarily holds programs, data, and the like read by the CPU 121 a .

[0040] The I / O port 121d is connected to the above-mentioned MFCs 241a to 241e, valves 243a to 243e, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotation mechanism 267, boat elevator 115, gate opening and closing mechanism 115s, etc.

[0041] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c in accordance with input of an operation command from the input / output device 122. The CPU 121a is configured to control, according to the contents of the read recipe, flow rate adjustment operations of various gases by the MFCs 241a to 241e, opening and closing operations of the valves 243a to 243e, opening and closing operations of the APC valve 244 and pressure adjustment operations by the APC valve 244 based on the pressure sensor 245, start and stop of the vacuum pump 246, temperature adjustment operations of the heater 207 by the temperature sensor 263, rotation of the wafer boat 217 and rotation speed adjustment operations by the rotation mechanism 267, lifting and lowering operations of the wafer boat 217 by the wafer boat elevator 115, opening and closing operations of the gate 219s by the gate opening and closing mechanism 115s, and the like.

[0042] The controller 121 can be constructed by installing the above-mentioned program stored in the external storage device 123 into the computer. The external storage device 123 includes, for example, magnetic disks such as HDD, optical disks such as CD, optical magnetic disks such as MO, semiconductor memories such as USB memories, etc. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, they are also collectively referred to as recording media. When the term recording medium is used in this specification, there is a case where only the storage device 121c is included alone, a case where only the external storage device 123 is included alone, or a case where both are included. It should be noted that providing the program to the computer can also be done without using the external storage device 123, but using communication means such as the Internet and dedicated lines.

[0043] (2) Substrate processing step

[0044] The following substrate processing sequence example is described as one process of the manufacturing process of a semiconductor device using the above-mentioned substrate processing apparatus, wherein the substrate processing sequence example repeatedly performs the following processes: a process of supplying a processing gas into a processing container containing a wafer 200 as a substrate to process the wafer 200; and a process of supplying a cleaning gas into a processing container that does not contain the wafer 200 to clean the processing container. In the following description, the operations of the various parts constituting the substrate processing apparatus are controlled by the controller 121.

[0045] like Figure 4 As shown in (a), in the substrate processing sequence in this embodiment, there is a process of repeatedly performing the following steps:

[0046] Step A (Depo), which performs a process of supplying MS gas as a processing gas into a heated processing container containing the wafer 200 to process the wafer 200; and

[0047] Step B (CLN) is to perform a cleaning process of supplying F2 gas as a cleaning gas into the heated processing container that does not contain the wafer 200 to clean the processing container.

[0048] The time T2 from the end of step B to the start of step A is set to be less than the time T1 from the end of step A to the start of step B.

[0049] It should be noted that in step B, the following steps are performed:

[0050] A step of supplying F2 gas as a cleaning gas into a processing container set at a first temperature;

[0051] The step of raising the temperature in the processing container from a first temperature to a second temperature;

[0052] The step of maintaining the processing container at a second temperature for a predetermined time; and

[0053] A step of lowering the temperature in the processing container from the second temperature to the processing temperature in step A.

[0054] When the term "wafer" is used in this specification, it may refer to the wafer itself or to a stack of a wafer and a predetermined layer or film formed on its surface. When the term "surface of a wafer" is used in this specification, it may refer to the surface of the wafer itself or to the surface of a predetermined layer, etc. formed on the wafer. When "a predetermined layer is formed on the wafer" is written in this specification, it may refer to directly forming a predetermined layer on the surface of the wafer itself or to forming a predetermined layer on a layer, etc. formed on the wafer. When the term "substrate" is used in this specification, it has the same meaning as when the term "wafer" is used.

[0055] [Step A]

[0056] First, step A (Depo) of the process for processing the wafer 200 will be described.

[0057] (Wafer filling, wafer boat loading)

[0058] After a plurality of wafers 200 are loaded (wafer filling) onto the wafer boat 217, the gate opening and closing mechanism 115s is used to move the gate 219s, thereby opening the lower end of the manifold 209 (gate opening). Figure 1As shown, the boat 217 supporting a plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201 (boat loading). In this state, the sealing cap 219 is in a state of sealing the lower end of the manifold 209 via the O-ring 220b.

[0059] (Pressure regulation and temperature regulation)

[0060] After the wafer boat 217 is loaded into the processing chamber 201, vacuum exhaust (decompression exhaust) is performed by the vacuum pump 246 so that the processing chamber 201 (i.e., the space where the wafer 200 exists) reaches the desired pressure (vacuum degree). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled (pressure regulated) based on the measured pressure information. In addition, the heater 207 is used to heat the wafer 200 in the processing chamber 201 so that the temperature reaches the desired temperature. At this time, the power supply to the heater 207 is feedback-controlled (temperature regulated) based on the temperature information detected by the temperature sensor 263 so that the temperature distribution in the processing chamber 201 reaches the desired temperature distribution. In addition, the rotation of the wafer boat 217 and the wafer 200 by the rotation mechanism 267 is started. The operation of the vacuum pump 246, the heating and rotation of the wafer 200 are all continued at least until the processing of the wafer 200 is completed.

[0061] (Film Forming)

[0062] After the pressure adjustment and the temperature adjustment in the processing chamber 201 are completed, the MS gas and the PH gas are supplied to the wafer 200 in the processing chamber 201 .

[0063] Specifically, valve 243a is opened, and MS gas flows into gas supply pipe 232a. MS gas is flow-regulated by MFC241a, supplied to processing chamber 201 via nozzle 249a, and exhausted from exhaust port 231a. In addition, at this time, valve 243b is opened, and PH gas flows into gas supply pipe 232b. PH gas is flow-regulated by MFC241b, supplied to processing chamber 201 via nozzle 249b, and exhausted from exhaust port 231a. At this time, MS gas and PH gas are supplied to wafer 200 together and simultaneously (MS gas + PH gas supply). In addition, at this time, valves 243d and 243e can be opened, and N2 gas can be supplied to processing chamber 201 via each of nozzles 249a and 249b.

[0064] The treatment conditions in this step include:

[0065] MS gas supply flow rate: 0.001~10slm

[0066] PH gas supply flow rate: 0.0001~2slm

[0067] MS gas and PH gas supply time: 1 to 1000 minutes

[0068] N2 gas supply flow rate (per gas supply pipe): 0~10slm

[0069] Temperature in processing chamber 201 (film forming temperature): 300~700℃

[0070] The pressure in the processing chamber 201 (film forming pressure) is 1 to 10,000 Pa.

[0071] In this specification, the expression of a numerical range such as "300 to 700°C" means that the lower limit and the upper limit are included in the range. Therefore, for example, "300 to 700°C" means "300°C or more and 700°C or less". The same applies to other numerical ranges.

[0072] By supplying MS gas and PH gas to the wafer 200 under the above-mentioned processing conditions, Si can be deposited on the surface of the wafer 200. Thus, a Si-containing film as a film, specifically, a Si film doped with P as a dopant (hereinafter also referred to as a P-doped Si film, or simply a Si film) can be formed on the wafer 200.

[0073] As the raw material gas, in addition to MS gas, disilane (Si2H6) gas, trisilane (Si3H8) gas, tetrasilane (Si4H 10 ) gas, pentasilane (Si5H 12 ) gas, hexasilane (Si6H 14 ) gas and other silicon hydride gases.

[0074] As a dopant gas, in addition to PH gas, a gas containing arsenic (As) as a group V element, such as arsine (AsH3) gas, can be used. In addition, as a dopant gas, a gas containing boron (B) as a group III element, such as diborane (B2H6) gas and trichloroborane (BCl3) gas can be used.

[0075] As the inert gas, in addition to N2 gas, a rare gas such as Ar gas, He gas, Ne gas, or Xe gas may be used. This also applies to step B described later.

[0076] (Post-purge and atmospheric pressure recovery)

[0077] After the Si film is formed on the wafer 200, the valves 243a and 243b are closed to stop the supply of MS gas and PH gas to the processing chamber 201. Then, the processing chamber 201 is evacuated to remove the residual gas in the processing chamber 201. At this time, the valves 243d and 243e are opened, and N2 gas as a purge gas is supplied to the processing chamber 201 from each of the nozzles 249a and 249b, and the gas is exhausted from the exhaust port 231a. Thus, the processing chamber 201 is purged, and the residual gas, reaction by-products, etc. in the processing chamber 201 are removed from the processing chamber 201 (post-purge). Then, the atmosphere in the processing chamber 201 is replaced with an inactive gas (inactive gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (atmospheric pressure recovery).

[0078] (Wafer boat unloading, wafer removal)

[0079] Then, the sealing cover 219 is lowered by the wafer boat elevator 115, and the lower end of the manifold 209 is opened. Then, the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the reaction tube 203 in a state supported by the wafer boat 217 (wafer boat unloading). After the wafer boat is unloaded, the gate 219s is moved, and the lower end opening of the manifold 209 is sealed by the gate 219s via the O-ring 220c (gate closing). After the processed wafer 200 is carried out to the outside of the reaction tube 203, it is taken out from the wafer boat 217 (wafer removal).

[0080] [Step B]

[0081] After the above-mentioned step A is performed, a deposit including a thin film such as a Si film is attached to the inside of the processing container, for example, the inner wall of the reaction tube 203, the surface of the nozzles 249a and 249b, the surface of the wafer boat 217, etc. That is, the deposit including the thin film is attached to the surface of the components in the processing chamber 201 heated to the film forming temperature, etc. Therefore, after the step A is completed, the step B (CLN) is performed, and the step B (CLN) performs a cleaning process for cleaning the inside of the processing container.

[0082] (Empty crystal boat loading)

[0083] The gate opening and closing mechanism 115s moves the gate 219s to open the lower end opening of the manifold 209 (the gate is opened). Then, the empty wafer boat 217, that is, the wafer boat 217 without wafers 200 loaded thereon, is lifted by the boat elevator 115 and carried into the processing chamber 201. In this state, the sealing cap 219 is in a state of sealing the lower end of the manifold 209 via the O-ring 220b.

[0084] (Pressure regulation and temperature regulation)

[0085] After the wafer boat 217 is moved into the processing chamber 201, the vacuum pump 246 is used to perform vacuum exhaust (pressure adjustment) so that the pressure in the processing chamber 201 is the desired pressure. In addition, the heater 207 is used to heat (temperature adjustment) the processing chamber 201 so that the temperature in the processing chamber 201 is the desired temperature (first temperature). At this time, the components in the processing chamber 201, namely the inner wall of the reaction tube 203, the surface of the nozzles 249a and 249b, the surface of the wafer boat 217, etc. are also heated to the first temperature. In addition, the rotation of the wafer boat 217 by the rotating mechanism 267 is started. The operation of the vacuum pump 246, the heating in the processing chamber 201, and the rotation of the wafer boat 217 are all continued at least until the cleaning described later is completed. It should be noted that the wafer boat 217 does not need to be rotated.

[0086] (clean)

[0087] After the pressure and temperature regulation in the processing chamber 201 are completed, F2 gas is supplied to the processing chamber 201 in a heated state without accommodating the wafer 200. Specifically, the valve 243c is opened, and the F2 gas flows into the gas supply pipe 232c. The F2 gas is flow-regulated by the MFC 241c, supplied to the processing chamber 201 through the gas supply pipe 232a and the nozzle 249a, and exhausted from the exhaust port 231a. At this time, the valves 243d and 243e can be opened at the same time, and N2 gas can be supplied to the processing chamber 201 through the nozzles 249a and 249b.

[0088] The treatment conditions in this step include:

[0089] F2 gas supply flow rate: 0.5~5slm

[0090] N2 gas supply flow rate (per gas supply pipe): 0~20slm

[0091] Each gas supply time: 1 to 60 minutes

[0092] Temperature in the processing chamber 201 (first temperature): 200-400°C

[0093] Pressure in processing chamber 201: 1333~53329Pa.

[0094] It should be noted that the first temperature is preferably set to a temperature lower than the processing temperature (film formation temperature) in step A.

[0095] By supplying F2 gas into the processing chamber 201 under the above-mentioned processing conditions, a thermochemical reaction (etching reaction) occurs, thereby removing deposits attached to the surfaces of components in the processing chamber 201, such as the inner wall of the reaction tube 203, the surfaces of the nozzles 249a and 249b, and the surface of the wafer boat 217.

[0096] After the removal of the deposits is completed after a predetermined time, the valve 243c is closed to stop the supply of F2 gas into the processing chamber 201. Then, the processing chamber 201 is purged using the same processing steps as the post-purging in the above-mentioned step A to remove the residual gas in the processing chamber 201 from the processing chamber 201.

[0097] Furthermore, at this time, the temperature in the processing chamber 201 is raised from the first temperature to the second temperature. That is, in parallel with the purging in the processing chamber 201, the temperature in the processing chamber 201 is raised from the first temperature to the second temperature. At this time, the components in the processing chamber 201, namely, the inner wall of the reaction tube 203, the surface of the nozzles 249a and 249b, the surface of the wafer boat 217, etc., are also raised to the second temperature. Thus, the processing chamber 201 can be purged in a state where the temperature is raised from the first temperature to the second temperature, and the gas remaining in the processing chamber 201 can be removed from the processing chamber 201. In addition, the cleaning residues, residual fluorine, etc. that are attached to and remain in the processing chamber 201 can be detached and removed from the processing chamber 201. Hereinafter, this purging is also referred to as temperature-raising purging. It should be noted that it is preferred that the second temperature is a temperature higher than the processing temperature (film forming temperature) in step A.

[0098] The treatment conditions in this step (heating and purging) include:

[0099] N2 gas supply flow rate (per gas supply pipe): 20-50 slm, preferably 30-50 slm N2 gas supply time: 1-40 minutes

[0100] Temperature in the processing chamber 201 at the start of temperature rise (first temperature): 200 to 400°C

[0101] Temperature in the processing chamber 201 at the end of the temperature increase (second temperature): 600 to 800°C

[0102] Pressure in processing chamber 201: 1~101325Pa.

[0103] After the temperature in the processing chamber 201 reaches the second temperature, the temperature in the processing chamber 201 is maintained at the second temperature for a predetermined time. That is, in parallel with the purging in the processing chamber 201, the temperature in the processing chamber 201 is maintained at the second temperature for a predetermined time. At this time, the components in the processing chamber 201, namely, the inner wall of the reaction tube 203, the surfaces of the nozzles 249a and 249b, the surface of the wafer boat 217, etc. are also maintained at the second temperature. Thus, the processing chamber 201 can be purged in a state heated to the second temperature, and the residual gas that is not completely removed by the temperature-raising purging can be removed from the processing chamber 201. In addition, the cleaning residues, residual fluorine, etc. that are attached to the processing chamber 201 and are not completely removed by the temperature-raising purging and remain can be separated and removed from the processing chamber 201. Hereinafter, this purging is also referred to as high-temperature purging.

[0104] As the treatment conditions in this step (high temperature purge), the following can be exemplified:

[0105] N2 gas supply flow rate (per gas supply pipe): 20-50slm, preferably 30-50slm

[0106] N2 gas supply time: 1 to 40 minutes

[0107] Temperature in the processing chamber 201 (second temperature): 600-800°C

[0108] Pressure in processing chamber 201: 1~101325Pa.

[0109] Then, the temperature in the treatment chamber 201 is lowered from the second temperature to the treatment temperature (film forming temperature) in step A. It is preferred that the treatment chamber 201 is maintained in a purging state during the temperature reduction. Thus, the residual gas that has not been completely removed by the high-temperature purge can be removed from the treatment chamber 201. In addition, the cleaning residues, residual fluorine, etc. that have not been completely removed by the high-temperature purge and are attached to the treatment chamber 201 can be detached and removed from the treatment chamber 201. Hereinafter, this purge will also be referred to as cooling purge. The processing conditions other than the temperature conditions at this time may be the same as the processing conditions in, for example, heating purge and high-temperature purge. It should be noted that, when the removal of residual gas, cleaning residue, residual fluorine, etc. is completed by high-temperature purge, it is preferred that the N2 gas supply flow rate in the cooling purge is less than the N2 gas supply flow rate in the heating purge and high-temperature purge. Thus, the gas cost can be reduced.

[0110] It should be noted that preferably, the supply flow rate of N2 gas in at least the heating purge and the high-temperature purge is greater than the supply flow rate of N2 gas in the post-purge of step A. For example, when the supply flow rate of N2 gas in the post-purge of step A is 0.5 to 10 slm, the supply flow rate of N2 gas in the heating purge and the high-temperature purge can be 20 to 50 slm. It should be noted that the supply flow rate of N2 gas in the heating purge, the high-temperature purge, and the cooling purge can also be greater than the supply flow rate of N2 gas in the post-purge of step A. By making the supply flow rate of N2 gas in the heating purge, the high-temperature purge, and the cooling purge greater than the supply flow rate of N2 gas in the post-purge, the removal efficiency of cleaning residues, residual fluorine, etc. can be particularly improved.

[0111] It should be noted that the maximum temperature inside the processing container in step A described above and the maximum temperature inside the processing container in step B are preferably different temperatures. Specifically, the maximum temperature inside the processing container in step B is preferably higher than the maximum temperature inside the processing container in step A. In this way, the cleaning inside the processing container can be carried out efficiently.

[0112] As the cleaning gas, in addition to F2 gas, hydrogen fluoride (HF) gas, nitrogen trifluoride (NF3) gas, chlorine trifluoride (ClF3) gas, or a mixed gas thereof can also be used. In addition, as the cleaning gas, a mixed gas obtained by adding nitrogen oxide gases such as nitric oxide (NO) gas and nitrous oxide (N2O) gas to these F-containing gases can be used. In addition, as the cleaning gas, in addition to F-containing gases, halogen-containing gases other than F-containing gases such as chlorine (Cl2) gas and hydrogen chloride (HCl) gas can also be used.

[0113] 〔Repeating process〕

[0114] Then, steps A and B are repeated. It should be noted that in this method, when steps A and B are repeated, the process of performing step A once and the process of performing step B once are alternately repeated. That is, step B is performed every time step A is performed.

[0115] At this time, as described above, the time T2 from the end of step B to the start of step A is set to be less than or equal to the time T1 from the end of step A to the start of step B (T2 ≤ T1). It is preferred that the time T2 is less than the time T1 (T2 < T1). Regarding T1 and T2, as long as T2 ≤ T1, various settings can be made for each of them. Considering from the aspect of obtaining the effects described below, it is desirable to set T2 to a time less than 1 hour, preferably a time of 0.5 hour or less, and more preferably a time less than 0.5 hour. Regarding T1 and T2, for example, the following times can be appropriately selected.

[0116] T1 = 1 hour, T2 = 0.1 hour

[0117] T1 = 2 hours, T2 = 0.2 hours

[0118] T1 = 3 hours, T2 = 0.3 hours

[0119] T1 = 4 hours, T2 = 0.4 hours

[0120] (3) Effects brought about by this method

[0121] According to this method, one or more of the following effects can be obtained.

[0122] (a) When alternately repeating steps A and B, as shown in (a) below, by setting the time T2 from the end of step B to the start of step A to be less than or equal to the time T1 from the end of step A to the start of step B (T2 ≤ T1), compared with a reference example as shown in (b) below where T2 > T1, the characteristics of the Si film formed on the wafer 200 can be improved. Specifically, the film quality of the Si film formed on the wafer 200 can be improved, and in addition, the controllability of the film thickness can be improved. Figure 4 When alternately repeating steps A and B, as shown in (a) below, by setting the time T2 from the end of step B to the start of step A to be less than or equal to the time T1 from the end of step A to the start of step B (T2 ≤ T1), compared with a reference example as shown in (b) below where T2 > T1, the characteristics of the Si film formed on the wafer 200 can be improved. Specifically, the film quality of the Si film formed on the wafer 200 can be improved, and in addition, the controllability of the film thickness can be improved. Figure 4 When alternately repeating steps A and B, as shown in (a) below, by setting the time T2 from the end of step B to the start of step A to be less than or equal to the time T1 from the end of step A to the start of step B (T2 ≤ T1), compared with a reference example as shown in (b) below where T2 > T1, the characteristics of the Si film formed on the wafer 200 can be improved. Specifically, the film quality of the Si film formed on the wafer 200 can be improved, and in addition, the controllability of the film thickness can be improved.

[0123] (b) When alternately repeating steps A and B, as shown in (a) below, by making the time T2 from the end of step B to the start of step A less than or equal to the time T1 from the end of step A to the start of step B (T2 ≤ T1), compared with a reference example as shown in (b) below where T2 > T1, the reproducibility of the characteristics of the Si film formed on the wafer 200 can be improved. Specifically, the reproducibility of the film quality of the Si film formed on the wafer 200 and the reproducibility of the film thickness can be improved. Figure 4 When alternately repeating steps A and B, as shown in (a) below, by making the time T2 from the end of step B to the start of step A less than or equal to the time T1 from the end of step A to the start of step B (T2 ≤ T1), compared with a reference example as shown in (b) below where T2 > T1, the reproducibility of the characteristics of the Si film formed on the wafer 200 can be improved. Specifically, the reproducibility of the film quality of the Si film formed on the wafer 200 and the reproducibility of the film thickness can be improved. Figure 4 When alternately repeating steps A and B, as shown in (a) below, by making the time T2 from the end of step B to the start of step A less than or equal to the time T1 from the end of step A to the start of step B (T2 ≤ T1), compared with a reference example as shown in (b) below where T2 > T1, the reproducibility of the characteristics of the Si film formed on the wafer 200 can be improved. Specifically, the reproducibility of the film quality of the Si film formed on the wafer 200 and the reproducibility of the film thickness can be improved.

[0124] (c) When alternately repeating steps A and B, by setting the time T2 from the end of step B to the start of step A to be less than the time T1 from the end of step A to the start of step B (T2 < T1), the above various effects can be obtained more reliably.

[0125] (d) By making the first temperature in step B lower than the processing temperature (film formation temperature) in step A in step B, damage caused by corrosion of metal components in the processing chamber due to F2 gas and damage caused by etching of quartz components can be suppressed. In addition, by making the second temperature in step B higher than the processing temperature (film formation temperature) in step A in step B, cleaning residues, residual fluorine, etc. attached and remaining in the processing chamber can be effectively removed.

[0126] (e) In step B, when the temperature in the processing container is raised from the first temperature to the second temperature, N2 gas is supplied into the processing container and exhausted from the processing container, thereby efficiently removing cleaning residues, residual fluorine, etc. released due to the temperature rise in the processing container from the processing chamber 201. In addition, in step B, when the temperature in the processing container is maintained at the second temperature for a predetermined time, N2 gas is supplied into the processing container and exhausted from the processing container, thereby efficiently removing cleaning residues, residual fluorine, etc. released due to maintaining the temperature in the processing container at the second temperature from the processing chamber 201. It should be noted that when all cleaning residues, residual fluorine, etc. can be removed from the processing container when the temperature in the processing container is raised from the first temperature to the second temperature, that is, when the temperature rise is completed, it is not necessary to maintain the processing container at the second temperature, and it can be omitted.

[0127] (f) The effects brought about by this method can also be obtained when using a raw material gas other than MS gas, when using a dopant gas other than PH gas, when using a cleaning gas other than F2 gas, and when using an inert gas other than N2 gas.

[0128] (4) Modification

[0129] The substrate processing sequence in this embodiment can be changed as shown in the following modified examples. These modified examples can be combined arbitrarily. Unless otherwise specified, the processing steps and processing conditions in each step of each modified example can be the same as the processing steps and processing conditions in each step of the above-mentioned substrate processing sequence.

[0130] (Variant 1)

[0131] In addition to steps A and B, the following step C may be further included: without supplying any of MS gas, PH gas and F2 gas to the heated processing container that does not contain the wafer 200, a process is performed to maintain the heated state in the processing container. In addition, the following step C may be included, which performs a prescribed process (idle process) in such a manner. In addition, step C may be implemented during the period from the end of step A to the start of step B. That is, the cycle of steps A, C and B may be repeated in sequence. In this case, after the end of step A, a prescribed time passes, and then step B is started (by making T1 a prescribed length of time), thereby making it easy to make T2≤T1, and it is easier to obtain the same effect as the above method. It should be noted that when performing step C, it is preferred that valves 243d and 243e are opened, and N2 gas is supplied from each of the nozzles 249a and 249b to the processing chamber 201, and exhaust is simultaneously exhausted from the exhaust port 231a to maintain the processing chamber 201 in a gas-purged state. This allows the atmosphere in the processing chamber 201 to be kept clean. The N2 gas supply flow rate at this time is preferably smaller than that in the temperature rise purge and the high temperature purge, and can be, for example, 0.1 to 2 slm.

[0132] (Variant 2)

[0133] It is not necessary to perform step C in the above-mentioned modification 1 between the completion of step B and the start of step A. For example, step A may be started immediately after the completion of step B. That is, the time T2 between the completion of step B and the start of step A may be substantially 0 hours. Regarding T1 and T2, various settings may be made as long as T2 ≤ T1, and for example, the following times may be appropriately selected.

[0134] T1 = 1 hour, T2 = 0 hours

[0135] T1 = 2 hours, T2 = 0 hours

[0136] T1 = 3 hours, T2 = 0 hours

[0137] T1 = 4 hours, T2 = 0 hours

[0138] In this modification, the same effects as those of the above method can be obtained. In addition, by making T2 substantially 0 hours, the various effects obtained by the above method can be further improved. In addition, the cycle time of the cycle of steps A, C, and B can be shortened, thereby improving the productivity of substrate processing.

[0139] (Variant 3)

[0140] It is also possible not to perform step C in the above-mentioned modification 1 between the completion of step A and the start of step B. For example, when step A is started immediately after the completion of step B, step B may be started immediately after the completion of step A. That is, as shown below, the time T2 from the completion of step B to the start of step A may be substantially 0 hours, and the time T1 from the completion of step A to the start of step B may be substantially 0 hours.

[0141] T1 = 0 hours, T2 = 0 hours

[0142] In this modification, the same effects as those of the above embodiment can be obtained. In addition, by setting T1 and T2 to substantially 0 hours, the cycle time of sequentially performing steps A and B can be further shortened, thereby further improving the productivity of substrate processing.

[0143] (Variant 4)

[0144] When step A and step B are repeated, the process of performing step A multiple times and the process of performing step B once may be repeated alternately. That is, step B may be performed after each multiple times of performing step A. In this way, the same effect as the above-mentioned method can be obtained. In addition, by appropriately reducing the frequency of performing step B, the increase in gas cost can be suppressed, and the productivity of substrate processing can be improved.

[0145] <Other forms of this disclosure>

[0146] The embodiments of the present disclosure have been specifically described above, but the present disclosure is not limited to the above embodiments, and various modifications can be made within the scope of the present disclosure.

[0147] In the above-mentioned method, it is preferred that the process used in each treatment is prepared separately according to the treatment content, and is stored in advance in the storage device 121c via the electric communication line and the external storage device 123. In addition, when starting each treatment, it is preferred that the CPU 121a appropriately selects a suitable process from the multiple processes stored in the storage device 121c according to the treatment content. In this way, it is possible to form films of various film types, composition ratios, film qualities, and film thicknesses with good reproducibility in one substrate processing device. In addition, it is possible to reduce the burden on the operator, and it is possible to quickly start each treatment while avoiding operational errors.

[0148] The above process is not limited to the case of newly making, and for example, it can also be prepared by changing an existing process already installed in a substrate processing device. When changing the process, the changed process can also be installed in the substrate processing device via an electrical communication line or a recording medium recording the process. In addition, the input / output device 122 of the existing substrate processing device can be operated to directly change the existing process installed in the substrate processing device.

[0149] In the above-mentioned method, an example of forming a film using a batch-type substrate processing device that processes a plurality of substrates at a time is described. The present disclosure is not limited to the above-mentioned method, and for example, it can also be appropriately applied to the case where a film is formed using a single-sheet substrate processing device that processes one or more substrates at a time. In addition, in the above-mentioned method, an example of forming a film using a substrate processing device having a hot-wall type processing furnace is described. The present disclosure is not limited to the above-mentioned method, and it can also be appropriately applied to the case where a film is formed using a substrate processing device having a cold-wall type processing furnace.

[0150] When these substrate processing apparatuses are used, each process can be performed according to the same process steps and process conditions as those in the above-mentioned embodiment, and the same effects as those in the above-mentioned embodiment can be obtained.

[0151] In addition, the above-mentioned aspects can be used in combination as appropriate. The processing steps and processing conditions in this case can be, for example, the same as those in the above-mentioned aspects.

[0152] <Preferred Mode of the Present Disclosure>

[0153] The following is a supplementary description of the preferred embodiments.

[0154] (Note 1)

[0155] According to one embodiment of the present disclosure, there is provided a method for manufacturing a semiconductor device or a method for processing a substrate, the method comprising repeatedly performing the following steps (a) and (b),

[0156] (a) performing a process in which a process gas is supplied into a heated processing container containing a substrate and the substrate is processed;

[0157] (b) performing a cleaning process, in which a cleaning gas is supplied into the heated processing container that does not contain the substrate, and the processing container is cleaned.

[0158] The time from the end of (b) to the start of (a) is set to be less than the time from the end of (a) to the start of (b).

[0159] (Note 2)

[0160] The method as described in Supplementary Note 1 further includes: (c) maintaining the heated state in the processing container (performing a process) without supplying any of the processing gas and the cleaning gas into the heated processing container that does not contain the substrate,

[0161] (c) shall not be implemented during the period from the completion of (b) to the start of (a).

[0162] (Note 3)

[0163] A method as described in Supplementary Note 2, wherein (c) is implemented during the period from the completion of (a) to the start of (b).

[0164] (Note 4)

[0165] A method as described in Supplementary Note 2, wherein (c) is not performed during the period from the completion of (a) to the start of (b).

[0166] (Note 5)

[0167] The method according to any one of appendices 1 to 4, wherein (a) is started immediately after (b) is completed.

[0168] (Note 6)

[0169] A method as described in Supplementary Note 5, wherein after (a) is completed, a prescribed time elapses and then (b) is started.

[0170] (Note 7)

[0171] A method as described in Supplementary Note 5, wherein (b) is started immediately after (a) is completed.

[0172] (Note 8)

[0173] The method according to any one of Appendixes 1 to 7, wherein the time from the completion of (b) to the start of (a) is set to 0 hours.

[0174] (Note 9)

[0175] A method as described in Supplementary Note 8, wherein the time from the completion of (a) to the start of (b) is set to 0 hours.

[0176] (Note 10)

[0177] The method according to any one of Appendixes 1 to 9, wherein the maximum temperature in the processing container in (a) is different from the maximum temperature in the processing container in (b).

[0178] (Note 11)

[0179] A method as described in Appendix 10, wherein the maximum temperature in the processing container in (b) is higher than the maximum temperature in the processing container in (a).

[0180] (Note 12)

[0181] The method as described in Supplement 10 or 11, wherein (b) comprises the following steps:

[0182] (b1) supplying the cleaning gas into the processing container set to a first temperature;

[0183] (b2) a step of raising the temperature in the processing container from the first temperature to a second temperature; and

[0184] (b3) A step of lowering the temperature in the processing container from the second temperature to the processing temperature in (a).

[0185] Preferably, in (b2), after the temperature in the processing container is raised to the second temperature, the second temperature in the processing container is maintained for a predetermined time.

[0186] (Note 13)

[0187] A method as described in Supplementary Note 12, wherein the first temperature is lower than the treatment temperature in (a), and the second temperature is higher than the treatment temperature in (a).

[0188] (Note 14)

[0189] A method as described in Appendix 12 or 13, wherein in (b2), an inert gas is supplied into the processing container and exhausted from the processing container. In addition, in (b3), an inert gas is supplied into the processing container and exhausted from the processing container.

[0190] (Note 15)

[0191] The method according to any one of appendixes 1 to 14, wherein the cleaning gas is a halogen-containing gas. The halogen-containing gas is a fluorine-containing gas.

[0192] (Note 16)

[0193] The method according to any one of appendices 1 to 15, wherein in (a), a process of forming a film on the substrate is performed. The film is a silicon-containing film. The silicon-containing film is a silicon film. The silicon film is a silicon film doped with a dopant.

[0194] (Note 17)

[0195] The method according to any one of appendices 1 to 16, wherein in the step of repeating (a) and (b), the step of performing (a) once and the step of performing (b) once are repeated alternately. That is, (b) is performed every time (a) is performed once.

[0196] (Note 18)

[0197] The method according to any one of appendices 1 to 16, wherein in the step of repeating (a) and (b), the step of performing (a) a plurality of times and the step of performing (b) once are repeated alternately. That is, (b) is performed after each multiple times of performing (a).

[0198] (Note 19)

[0199] According to another embodiment of the present disclosure, there is provided a substrate processing apparatus having:

[0200] a processing vessel for substrates to be processed;

[0201] A heater for heating the inside of the processing container;

[0202] a process gas supply system for supplying process gas into the process container;

[0203] a clean gas supply system for supplying clean gas into the processing container; and,

[0204] The control unit is configured to control the heater, the processing gas supply system, and the cleaning gas supply system so that each process (each step) of Supplementary Note 1 can be performed.

[0205] (Note 20)

[0206] According to another aspect of the present disclosure, there is provided a program for causing a substrate processing apparatus to execute the steps (processes) of Supplementary Note 1 using a computer, or a computer-readable recording medium recording the program.

[0207] Description of Reference Numerals

[0208] 200 Wafer (substrate)

[0209] 201 Processing Room

Claims

1. A method for manufacturing a semiconductor device, comprising repeatedly performing the following steps (a) and (b): (a) performing a process in which a process gas is supplied into a heated process container containing a substrate and the substrate is processed; and, (b) performing a cleaning process, in which a cleaning gas is supplied into the heated processing container that does not contain the substrate, and the processing container is cleaned. The time from the end of (b) to the start of (a) is set to be shorter than the time from the end of (a) to the start of (b).

2. The method for manufacturing a semiconductor device according to claim 1, further comprising: (c) maintaining the heated state in the processing container without supplying any of the processing gas and the cleaning gas into the heated processing container that does not accommodate the substrate, (c) shall not be implemented during the period from the completion of (b) to the start of (a).

3. The method for manufacturing a semiconductor device according to claim 2, wherein: During the period from the completion of (a) to the start of (b), (c) is implemented.

4. The method for manufacturing a semiconductor device according to claim 2, wherein: (c) shall not be implemented during the period from the completion of (a) to the start of (b).

5. The method for manufacturing a semiconductor device according to claim 1, wherein: (a) begins immediately after (b) ends.

6. The method for manufacturing a semiconductor device according to claim 5, wherein: After (a) is completed, a predetermined time passes and then (b) begins.

7. The method for manufacturing a semiconductor device according to claim 5, wherein: (b) begins immediately after (a) ends.

8. The method for manufacturing a semiconductor device according to claim 1, wherein: The time from the end of (b) to the start of (a) is set to 0 hours.

9. The method for manufacturing a semiconductor device according to claim 8, wherein: The time from the end of (a) to the start of (b) is set to 0 hours.

10. The method for manufacturing a semiconductor device according to claim 1, wherein: The maximum temperature in the processing container in (a) is different from the maximum temperature in the processing container in (b).

11. The method for manufacturing a semiconductor device according to claim 10, wherein: The maximum temperature in the processing container in (b) is higher than the maximum temperature in the processing container in (a).

12. The method for manufacturing a semiconductor device according to claim 10, wherein: (b) include: (b1) supplying the cleaning gas into the processing container set to a first temperature; (b2) a step of raising the temperature in the processing container from the first temperature to a second temperature; and (b3) A step of lowering the temperature in the processing container from the second temperature to the processing temperature in (a).

13. The method for manufacturing a semiconductor device according to claim 12, wherein: The first temperature is lower than the processing temperature in (a), and the second temperature is higher than the processing temperature in (a).

14. The method for manufacturing a semiconductor device according to claim 12, wherein: In (b2), an inert gas is supplied into the processing container, and the processing container is exhausted.

15. The method for manufacturing a semiconductor device according to any one of claims 1 to 14, wherein: The cleaning gas is a halogen-containing gas.

16. The method for manufacturing a semiconductor device according to any one of claims 1 to 14, wherein: In (a), a process of forming a film on the substrate is performed.

17. The method for manufacturing a semiconductor device according to any one of claims 1 to 14, wherein: In the step of repeatedly performing (a) and (b), performing the step (a) once and performing the step (b) once are repeated alternately.

18. The method for manufacturing a semiconductor device according to any one of claims 1 to 14, wherein: In the step of repeating (a) and (b), the step (a) is performed a plurality of times and the step (b) is performed once, and they are repeated alternately.

19. A substrate processing method, comprising repeatedly performing the following steps (a) and (b): (a) performing a process in which a process gas is supplied into a heated process container containing a substrate and the substrate is processed; (b) performing a cleaning process, in which a cleaning gas is supplied into the heated processing container that does not contain the substrate, and the processing container is cleaned. Furthermore, the time from the end of (b) to the start of (a) is set to be shorter than the time from the end of (a) to the start of (b).

20. A substrate processing device comprising: a processing vessel for substrates to be processed; a heater for heating the inside of the processing container; a process gas supply system for supplying a process gas into the process container; a clean gas supply system for supplying a clean gas into the processing container; and, A control unit is configured to control the heater, the processing gas supply system, and the cleaning gas supply system so that the following (a) and (b) are repeatedly performed: (a) performing a process in which the process gas is supplied into the heated process container containing the substrate and the substrate is processed; (b) performing a cleaning process, in which the cleaning gas is supplied into the heated processing container that does not contain the substrate, and the processing container is cleaned. Furthermore, the time from the end of (b) to the start of (a) is set to be shorter than the time from the end of (a) to the start of (b).

21. A computer-readable recording medium having a program recorded thereon for causing a substrate processing apparatus to execute the following steps using a computer: Repeat the following steps (a) and (b); and The step of setting the time from the end of (b) to the start of (a) to be shorter than the time from the end of (a) to the start of (b), in, (a) performing a process in which a process gas is supplied into a heated process container containing a substrate and the substrate is processed, (b) performing a cleaning process, in which a cleaning gas is supplied into the heated processing container that does not contain the substrate, to clean the processing container.

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