Semiconductor device measurement data processing method, processing system and computer equipment

Abstract

The present invention relates to a method, a processing system and a computer device for processing semiconductor device measurement data. The above-mentioned processing method is applied to a processing server, including establishing data transmission between the processing server and a measuring machine server; obtaining a measurement data file on the measuring machine server; converting the measurement data file into a preset report, and storing the preset report in a database of the processing server. In this application, by converting the measurement data file into a preset report and storing the preset report in the database of the processing server, engineers can call and view the preset report in the database of the processing server when needed, thereby avoiding the problem that when engineers view measurement reports provided by different measuring machines, they need to spend time processing measurement data because the measurement reports are quite different or the measurement reports do not meet the requirements of measurement result analysis.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a method and system for processing semiconductor device measurement data and a computer device. Background Art

[0002] In the semiconductor manufacturing process, CD measurement is an indicator for testing the process line width. Semiconductor foundries use a variety of different types of measurement machines for CD measurement, and the supporting measurement data analysis report systems are also diverse. On the one hand, it causes waste of foundry IT resources and increases maintenance costs. On the other hand, engineers need to switch back and forth between various reporting systems. The measurement reports provided by the measurement machines are too simple or vary greatly or do not meet the requirements of engineers for measurement result analysis. Engineers need to manually create the required reports, which will take up a lot of engineers' time and reduce their work efficiency. Summary of the invention

[0003] Based on this, it is necessary to provide a method and system for processing semiconductor device measurement data and a computer device to address the above problems.

[0004] A method for processing semiconductor device measurement data, applied to a processing server, comprising:

[0005] Establishing data transmission between the processing server and the measuring machine server;

[0006] Obtaining the measurement data file on the measurement machine server;

[0007] The measurement data file is converted into a preset report, and the preset report is stored in a database of the processing server.

[0008] In one embodiment, the preset report includes an exposure coordinate report, and the step of converting the measurement data file into the preset report includes:

[0009] Acquire exposure coordinate data of each target chipset on the target wafer, wherein the exposure coordinate data includes an X exposure coordinate value, a Y exposure coordinate value, and a chipset feature size value;

[0010] Arrange the X exposure coordinate values ​​of each target chipset from small to large as the horizontal axis of the exposure coordinate report;

[0011] Arrange the Y exposure coordinate values ​​of each of the target chipsets from large to small as the vertical axis of the exposure coordinate report;

[0012] The chipset characteristic size value of each of the target chipsets is set in the exposure coordinate report to obtain the exposure coordinate report of the target wafer.

[0013] In one embodiment, the measurement data file includes a chip coordinate data file, and the step of obtaining exposure coordinate data of each target chip group on the target wafer includes:

[0014] Acquire chip coordinate data of each target chip on the target wafer, wherein the chip coordinate data includes an X chip coordinate value, a Y chip coordinate value, and a chip characteristic size value;

[0015] The target chips in row A and column B are taken as a target chipset group;

[0016] The sum of the X chip coordinate value and 1 is divided by A, the value is taken by the ceil function, and then 1 is subtracted to obtain the X exposure coordinate value corresponding to the X chip coordinate value;

[0017] The sum of the Y chip coordinate value and 1 is divided by B, the value is taken by the ceil function, and then 1 is subtracted to obtain the Y exposure coordinate value corresponding to the Y chip coordinate value;

[0018] An average value of the characteristic size values ​​of the target chips having the same X exposure coordinate value and the same Y exposure coordinate value is taken as the characteristic size value of the chipset corresponding to the X exposure coordinate value and the Y exposure coordinate value.

[0019] In one embodiment, the preset report also includes a focus energy matrix report, and the step of converting the data file into the preset report also includes:

[0020] Obtaining each exposure focus value of the target chipset with each Y exposure coordinate value of zero in the exposure coordinate batch report;

[0021] Acquire each exposure energy value of the target chipset with each X exposure coordinate value of zero in the exposure coordinate batch report;

[0022] The focus energy matrix report of the target wafer is obtained by taking each of the exposure focus values ​​as the horizontal axis of the exposure coordinate report and taking each of the exposure energy values ​​as the vertical axis of the exposure coordinate report.

[0023] In one of the embodiments, the step of obtaining each exposure focus value of the target chipset with each Y exposure coordinate value of zero in the exposure coordinate batch report further includes the following steps:

[0024] Rotate the exposure batch report of the target wafer so that the vertical axis of the exposure batch report is consistent with the Y-axis direction of the exposure coordinate, and obtain an exposure coordinate batch report of the target chipset in the exposure coordinate;

[0025] The exposure coordinate batch report includes an exposure focus value report and an exposure energy value report.

[0026] In one embodiment, the method further comprises:

[0027] A test image corresponding to the measurement data file is obtained, and the test image is stored in a network storage of the processing server.

[0028] The above-mentioned method for processing semiconductor device measurement data is applied to a processing server, including establishing data transmission between the processing server and a measuring machine server; obtaining a measurement data file on the measuring machine server; converting the measurement data file into a preset report, and storing the preset report in a database of the processing server. This application converts the measurement data file into a preset report, and stores the preset report in the database of the processing server. Engineers can call and view the preset report in the database of the processing server when needed, thereby avoiding the problem that when engineers view measurement reports provided by different measuring machines, they need to spend time processing measurement data because the measurement reports are quite different or the measurement reports do not meet the requirements of measurement result analysis.

[0029] A method for processing semiconductor device measurement data, applied to a client server, comprising:

[0030] Establishing data transmission between the client server and the measuring machine server;

[0031] Obtain the measurement data file on the measurement machine server;

[0032] The data file is converted into a preset report.

[0033] In one embodiment, the preset report includes an exposure coordinate report, and the step of converting the data file into the preset report includes:

[0034] Acquire exposure coordinate data of each target chipset on the target wafer, wherein the exposure coordinate data includes an X exposure coordinate value, a Y exposure coordinate value, and a chipset feature size value;

[0035] Arrange the X exposure coordinate values ​​of each target chipset from small to large as the horizontal axis of the exposure coordinate report;

[0036] Arrange the Y exposure coordinate values ​​of each of the target chipsets from large to small as the vertical axis of the exposure coordinate report;

[0037] The chipset characteristic size value of each of the target chipsets is set in the exposure coordinate report to obtain the exposure coordinate report of the target wafer.

[0038] In one embodiment, the measurement data file includes a chip coordinate data file, and the step of obtaining the exposure coordinate data file of each target chip group on the target wafer includes:

[0039] Acquire chip coordinate data of each target chip on the target wafer, wherein the chip coordinate data includes an X chip coordinate value, a Y chip coordinate value, and a chip characteristic size value;

[0040] The target chips in row A and column B are taken as a target chipset group;

[0041] The sum of the X chip coordinate value and 1 is divided by A, the value is taken by the ceil function, and then 1 is subtracted to obtain the X exposure coordinate value corresponding to the X chip coordinate value;

[0042] The sum of the Y chip coordinate value and 1 is divided by B, the value is taken by the ceil function, and then 1 is subtracted to obtain the Y exposure coordinate value corresponding to the Y chip coordinate value;

[0043] An average value of the characteristic size values ​​of the target chips having the same X exposure coordinate value and the same Y exposure coordinate value is taken as the characteristic size value of the chipset corresponding to the X exposure coordinate value and the Y exposure coordinate value.

[0044] In one embodiment, the preset report also includes a focus energy matrix report, and the step of converting the measurement data file into the preset report also includes:

[0045] Obtaining each exposure focus value of the target chipset with each Y exposure coordinate value of zero in the exposure coordinate batch report;

[0046] Acquire each exposure energy value of the target chipset with each X exposure coordinate value of zero in the exposure coordinate batch report;

[0047] The focus energy matrix report of the target wafer is obtained by taking each of the exposure focus values ​​as the horizontal axis of the exposure coordinate report and taking each of the exposure energy values ​​as the vertical axis of the exposure coordinate report.

[0048] In one of the embodiments, the step of obtaining each exposure focus value of the target chipset with each Y exposure coordinate value of zero in the exposure coordinate batch report further includes the following steps:

[0049] Rotate the exposure batch report of the target wafer so that the vertical axis of the exposure batch report is consistent with the Y-axis direction of the exposure coordinate, and obtain an exposure coordinate batch report of the target chipset in the exposure coordinate;

[0050] The exposure coordinate batch report includes an exposure focus value report and an exposure energy value report.

[0051] The above-mentioned method for processing semiconductor device measurement data is applied to a client server, including: establishing data transmission between the client server and the measurement machine server; obtaining the measurement data file on the measurement machine server; converting the data file into a preset report. By converting the measurement data file into a preset report, the present application avoids the problem of engineers having to spend time processing measurement data when viewing measurement reports provided by different measurement machines due to large differences in measurement reports or measurement reports not meeting the requirements for measurement result analysis.

[0052] A semiconductor device measurement data processing system, comprising:

[0053] A data reading module is connected to the measuring machine and is used to obtain the measurement data file of the measuring machine;

[0054] The data conversion module is connected to the data reading module and is used to convert the measurement data file into a preset report.

[0055] In one of the embodiments, the preset report includes an exposure coordinate report;

[0056] The data conversion module is used to obtain exposure coordinate data of each target chipset on the target wafer in the measurement data file, wherein the exposure coordinate data includes an X exposure coordinate value, a Y exposure coordinate value and a chipset feature size value;

[0057] The data conversion module is further used to arrange the X exposure coordinate values ​​of each of the target chipsets from small to large as the horizontal axis of the exposure coordinate report; arrange the Y exposure coordinate values ​​of each of the target chipsets from large to small as the vertical axis of the exposure coordinate report; and set the chipset feature size value of each of the target chipsets in the exposure coordinate report to obtain the exposure coordinate report of the target wafer.

[0058] The above-mentioned semiconductor device measurement data processing system includes: a data reading module, connected to the measuring machine, used to obtain the measurement data file of the measuring machine; a data conversion module, connected to the data reading module, used to convert the measurement data file into a preset report. The present application converts the measurement data file into a preset report through the data conversion module, thereby avoiding the problem that when engineers view the measurement reports provided by different measuring machines, they need to spend time processing the measurement data because the measurement reports are quite different or the measurement reports do not meet the requirements of the measurement result analysis.

[0059] A computer device comprises a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of any one of the above methods when executing the computer program.

[0060] The above-mentioned computer device includes a memory and a processor, the memory stores a computer program, and the processor implements the steps of any of the above-mentioned methods when executing the computer program. The present application converts the measurement data file into a preset report, thereby avoiding the problem that when engineers view the measurement reports provided by different measurement machines, they need to spend time processing the measurement data because the measurement reports are quite different or the measurement reports do not meet the requirements of the measurement result analysis. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0062] Figure 1 is a flow chart of a method for processing semiconductor device measurement data in one embodiment;

[0063] Figure 2 It is a flowchart of converting the measurement data file into a preset report in the first embodiment;

[0064] Figure 3 A flowchart of obtaining exposure coordinate data of each target chip group on a target wafer in one embodiment;

[0065] Figure 4 A flowchart of converting the data file into a preset report in the second embodiment;

[0066] Figure 5 A flowchart of converting the data file into a preset report in the third embodiment;

[0067] Figure 6 is a flow chart of a method for processing semiconductor device measurement data in another embodiment;

[0068] Figure 7 This is a flow chart of converting a data file into a preset report in the fourth embodiment. DETAILED DESCRIPTION

[0069] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0070] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0071] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. On the contrary, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there may be no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components and / or parts, these elements, components and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component or part from another element, component or part. Therefore, without departing from the teachings of the present invention, the first element, component, region or part discussed below may be represented as a second element, component or part.

[0072] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0073] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0074] Embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention; variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances are to be expected.

[0075] In the semiconductor process, CD measurement is an indicator for checking the process line width. Currently, there are many CD measurement models, and the measurement reports generated by each measurement model are very different, which causes inconvenience for engineers to perform data analysis. In addition, when measuring, the coordinates used by various CD measurement machines are divided into Shot coordinates and Die coordinates. When engineers obtain the focus energy matrix report, they need to manually convert the Die coordinates into Shot coordinates, and then obtain the focus energy matrix report based on the converted shot coordinates, which reduces the work efficiency of engineers. Therefore, how to make the measurement data obtained by various CD measurement machines use the same program logic and generate the same report becomes very important.

[0076] like Figure 1 As shown, in one embodiment, a method for processing semiconductor device measurement data is provided, which is applied to a processing server, comprising:

[0077] S102, establishing data transmission between the processing server and the measuring machine server.

[0078] The processing server obtains the server information (FTP server information) of all configured measuring machines, and then logs in to the measuring machine FTP Server according to the login information to establish data transmission between the processing server and the measuring machine server.

[0079] S104, obtaining the measurement data file on the measurement machine server.

[0080] After establishing data transmission between the processing server and the measuring machine server, obtain the measurement data file on the measuring machine server, that is, obtain the file including the measurement data saved after the measuring machine tests the product.

[0081] S106, converting the measurement data file into a preset report, and storing the preset report in a database of the processing server.

[0082] After the processing server obtains the measurement data file, it converts the measurement data file into a preset report according to the report type set by the user, and stores the preset report in the database of the processing server. The user can call the preset report stored in the database of the processing server as needed, analyze the data in the preset report to obtain the measurement result, without the need to manually match the measurement data of different measurement machines to generate a report in a unified format that meets the requirements after obtaining the measurement data, which saves the time for data conversion, improves work efficiency, and can quickly obtain the information stored in the measurement data. In addition, the user can log in to the processing server as needed to obtain the required preset report, avoiding the restrictions on the login requirements of the measurement machine.

[0083] In one embodiment, the number of measurement machine servers that perform data transmission with the processing server is greater than or equal to 1. When the number of measurement machine servers that perform data transmission with the processing server is greater than 1, the measurement machine servers may be servers of the same type of measurement machine or servers of different types of measurement machines.

[0084] like Figure 2 As shown, in one embodiment, the preset report includes an exposure coordinate report, and the step of converting the measurement data file into the preset report includes:

[0085] S202, acquiring exposure coordinate data of each target chipset on the target wafer.

[0086] The exposure coordinates (shot coordinates) refer to dividing the chips on the wafer into multiple chip groups according to A*B chips, and then establishing a coordinate system with the flat side (flat) or notch (notch) of the wafer facing upward, the A*B chips in the center of the wafer as the origin O(0,0), the origin O facing upward as the positive direction of the Y axis, and the origin O facing right as the positive direction of the X axis.

[0087] A wafer measured by a measuring machine is selected as a target wafer, and exposure coordinate data of each target chipset on the target wafer is obtained, wherein the exposure coordinate data includes an X exposure coordinate value, a Y exposure coordinate value, and a chipset characteristic size value. That is, the X coordinate value of each target chipset on the target wafer in the shot coordinate system is obtained as the X exposure coordinate value, and the Y coordinate value is obtained as the Y exposure coordinate value, and the characteristic size value of the target chipset is matched with it as the exposure coordinate data of each target chipset.

[0088] S204, arranging the X exposure coordinate values ​​of the target chipsets from small to large as the horizontal axis of the exposure coordinate report.

[0089] Arrange the X exposure coordinate values ​​of all target chipsets on the target wafer from small to large as the horizontal axis of the exposure coordinate report.

[0090] S206, arranging the Y exposure coordinate values ​​of the target chipsets from large to small, as the vertical axis of the exposure coordinate report.

[0091] Arrange the Y exposure coordinate values ​​of all target chipsets on the target wafer from large to small as the vertical axis of the exposure coordinate report. At this time, a blank exposure coordinate report with a horizontal axis and a vertical axis is obtained.

[0092] S208, obtaining an exposure coordinate report of the target wafer according to the chipset characteristic size value of each of the target chipsets.

[0093] The chipset characteristic size value of each of the target chipsets is set in the exposure coordinate report to obtain the exposure coordinate report of the target wafer.

[0094] According to the X exposure coordinate value and Y exposure coordinate value of each target chipset on the target wafer, the chipset characteristic size value of the target chipset is filled into the blank exposure coordinate report to obtain the exposure coordinate report of the target wafer, that is, the MAP diagram of the chipset characteristic size value of each target chipset on the target wafer is obtained. Compared with viewing the measurement data table, the user can intuitively see the actual distribution of the characteristic size value of the target wafer according to the exposure coordinate report, and then perform process adjustments, abnormal analysis and other operations according to the distribution of the characteristic size value, without the need to manually correspond the abnormal data in the measurement data table to the target wafer, and then perform data analysis.

[0095] Taking the data in Table 1 as an example, the exposure coordinate report for obtaining the target wafer is specifically described below. Table 1 is part of the measurement data obtained after a certain measurement machine measures the characteristic size of the wafer. The coordinates used by the measurement machine for measurement are shot coordinates, and the corresponding data are shot coordinate measurement data. After selecting the NO.1 wafer to be tested as the target wafer, the test data corresponding to NO.1 is obtained, and the X exposure coordinate values ​​of each target chipset are arranged from small to large [-11, -5, -3, -2, 0, 2, 4, 6, 9, 11] as the horizontal axis of the exposure coordinate report, and the Y exposure coordinate values ​​of each target chipset are arranged from large to small [19, 13, 8, 7, 5, 2, 0, -2, -8, -13, -14, -15] as the vertical axis of the exposure coordinate report. Then, the chipset characteristic size values ​​of each target chipset in Table 1 are set in the exposure coordinate report, and the exposure coordinate report for the target wafer NO.1 as shown in Table 2 is obtained. Through Table 2, users can intuitively see the distribution of feature sizes of various parts on the target wafer, and then quickly analyze the test results without processing the obtained test data, which improves work efficiency and reduces production costs.

[0096] Chip NO. Data P NO. -2,-8 a 1 06,-2 b 1 02,00 c 1 00,05 d 1 -3,08 e 1 00,19 f 1 06,13 g 1 11,07 h 1 09,-15 i 1 04,-13 j 1 -5,-14 k 1 -11,02 l 1

[0097] Table 1

[0098] -11 -5 -3 -2 0 2 4 6 9 11 19 f 13 g 8 e 7 h 5 d 2 l 0 c -2 b -8 a -13 j -14 k -15 i

[0099] Table 2

[0100] like Figure 3 As shown, in one embodiment, the measurement data file includes a chip coordinate data file, and the step of obtaining exposure coordinate data of each target chip group on the target wafer includes:

[0101] S302, obtaining chip coordinate data of each target chip on the target wafer.

[0102] The chip coordinate data of each target chip on the target wafer in the measurement data file is obtained, and the chip coordinate data includes an X chip coordinate value, a Y chip coordinate value, and a chip characteristic size value. That is, the X chip coordinate value, the Y chip coordinate value, and the chip characteristic size value of each target chip on the target wafer in the chip coordinate are obtained.

[0103] The die coordinates refer to the coordinate system established with the flat side or notch of the wafer facing upwards, a chip at the center of the wafer as the origin O'(0,0), the origin O' facing upwards as the positive direction of the Y axis, and the origin O' facing right as the positive direction of the X axis.

[0104] S304, converting the target chip on the target wafer into a target chipset.

[0105] The target chips in row A and column B are used as a target chipset, and the target chips on the target wafer are converted into chips in the target chipset. That is, a target chipset is set to include A*B target chips, and then the target chips on the target wafer are converted into the target chipset. The values ​​of A and B in the target chipset on the same wafer are the same, for example, 2*3, 4*3, 2*6, 4*2 chips can be selected as a chipset.

[0106] S306, obtaining the X exposure coordinate value corresponding to each target chip.

[0107] The sum of the X chip coordinate value and 1 is divided by A, the value is taken by the ceil function, and then 1 is subtracted to obtain the X exposure coordinate value corresponding to the X chip coordinate value.

[0108] Shot Row = Ceil((Die Row+1) / Shot Die Row Num.)-1; where Die Row: X chip coordinate value of the target chip in the die coordinate system; Shot Die Row Num.: number of rows of target chips in a target chipset; Shot Row: X exposure coordinate value corresponding to the target chip in the shot coordinate system. The Shot Row formula can be used to convert the X chip coordinate value of each target chip on the target wafer into the corresponding X exposure coordinate value in the shot coordinate system.

[0109] S308, obtaining the Y exposure coordinate value corresponding to each target chip.

[0110] The sum of the Y chip coordinate value and 1 is divided by B, the value is taken by the ceil function and then subtracted by 1 to obtain the Y exposure coordinate value corresponding to the Y chip coordinate value.

[0111] Shot Column=Ceil((Die Column+1) / Shot Die Column Num.)-1; where DieColumn: the Y chip coordinate value of the target chip in the die coordinate system; Shot Die Column Num.: the number of columns of target chips in a target chipset; Shot Column: the corresponding Y exposure coordinate value of the target chip in the shot coordinate system. The ShotColumn formula can be used to convert the Y chip coordinate value of each target chip on the target wafer into the corresponding Y exposure coordinate value in the shot coordinate system.

[0112] S310, obtaining chipset characteristic size values ​​corresponding to each target chipset on the target wafer.

[0113] The characteristic size values ​​of the target chips with the same X exposure coordinate value and Y exposure coordinate value are averaged as the chipset characteristic size value corresponding to the X exposure coordinate value and the Y exposure coordinate value, and the exposure coordinate data corresponding to the target wafer chip coordinate data is obtained.

[0114] The following takes the conversion of the target chip on the target wafer into a 2*3 target chipset, i.e., Shot Die Row Num.=2, Shot Die Column Num.=3, and the chip coordinates of the target chips are [1,0], [1,1], [1,2], [0,0], [0,1], [0,2], [1,3] respectively. The corresponding chip feature size values ​​are a', b', c', d', e', f', g' respectively. This is an example of obtaining the exposure coordinate data of the target chipset corresponding to the target chip. For chip coordinate [1,0], Die Row = 1, Die Column = 0; Shot Row = Ceil((1+1) / 2)-1 = 0, Shot Column = Ceil((0+1) / 3)-1 = 0, that is, the chipset coordinate corresponding to chip coordinate [1,0] is [0,0]; similarly, the chipset coordinates corresponding to chip coordinates [1,1], [1,2], [0,0], [0,1], [0,2] are all [0,0], and the chipset feature size value M of chipset coordinate [0,0) is M = (a'+b'+c'+d'+e'+f') / 6; Shot Row = Ceil((1+1) / 2)-1 = 0, Shot Column = Ceil((3+1) / 3)-1 = 1 of chip coordinate (1,3), and the chipset coordinate corresponding to chip coordinate (1,3) is (0,1). Similarly, the target chipset corresponding to each target chip on the target wafer and the exposure coordinate data corresponding to the target chipset can be obtained.

[0115] like Figure 4 As shown, in one embodiment, the measurement data file includes a chip coordinate data file, the preset report includes a chip coordinate report, and the step of converting the data file into the preset report includes:

[0116] S402, obtaining chip coordinate data of each target chip on the target wafer.

[0117] Select the wafer measured by the measuring machine as the target wafer, and obtain the chip coordinate data of each target chip on the target wafer, wherein the chip coordinate data includes the X chip coordinate value, the Y chip coordinate value and the chip characteristic size value. That is, the X coordinate value of each target chip on the target wafer in the die coordinate system is obtained as the X chip coordinate value, the Y coordinate value is obtained as the Y chip coordinate value, and the characteristic size value of the target chip is matched with it as the exposure coordinate data of each target chip.

[0118] S404, arranging the X chip coordinate values ​​of the target chips from small to large as the horizontal axis of the chip coordinate report.

[0119] Arrange the X chip coordinate values ​​of all target chips on the target wafer from small to large as the horizontal axis of the chip coordinate report.

[0120] S406, arranging the Y chip coordinate values ​​of the target chips from large to small as the vertical axis of the chip coordinate report.

[0121] Arrange the Y chip coordinate values ​​of all target chips on the target wafer from large to small as the vertical axis of the chip coordinate report. At this time, a blank chip coordinate report with horizontal and vertical axes is obtained.

[0122] S408, obtaining a chip coordinate report of the target wafer according to the chip characteristic size value of each of the target chips.

[0123] The chip characteristic dimension value of each of the target chips is set in the chip coordinate report to obtain the chip coordinate report of the target wafer.

[0124] According to the X chip coordinate value and Y chip coordinate value of each target chip on the target wafer, the chip characteristic size value of the target chip is filled into the blank chip coordinate report to obtain the chip coordinate report of the target wafer, that is, the MAP diagram of the chip characteristic size value of each target chip on the target wafer. Compared with viewing the measurement data table, the user can intuitively see the actual distribution of the target wafer characteristic size value based on the chip coordinate report, and then perform process adjustments, abnormal analysis and other operations based on the distribution of the characteristic size value, without the need to manually correspond the abnormal data in the measurement data table to the target wafer, and then perform data analysis.

[0125] like Figure 5 As shown, in one embodiment, the preset report also includes a focus energy matrix report, and the step of converting the data file into the preset report also includes:

[0126] S502, obtaining each exposure focus value of the target chipset whose Y exposure coordinate value is zero in the exposure coordinate batch report.

[0127] Get the exposure focus value corresponding to each target chipset with a Y exposure coordinate value of zero on the target wafer in the exposure coordinate batch report, that is, the exposure focus value of each target chipset with a Y exposure coordinate value in the exposure coordinate batch report. The exposure coordinate batch report refers to the exposure focus value report and exposure energy value report of the exposure machine for the target wafer exposure process. The exposure focus value report and exposure energy value report are shot coordinate reports.

[0128] S504, obtaining each exposure energy value of the target chipset with each X exposure coordinate value of zero in the exposure coordinate batch report.

[0129] The corresponding exposure energy value of each target chipset with an X exposure coordinate value of zero on the target wafer in the exposure coordinate batch report is obtained, that is, the exposure energy value of each target chipset with an X exposure coordinate value in the exposure coordinate batch report.

[0130] S506, converting the horizontal axis of the exposure coordinate report into an exposure focus value and the vertical axis into an exposure energy value, to obtain a focus energy matrix report of the target wafer.

[0131] The focus energy matrix report of the target wafer is obtained by taking each of the exposure focus values ​​as the horizontal axis of the exposure coordinate report and taking each of the exposure energy values ​​as the vertical axis of the exposure coordinate report.

[0132] For example, the target chipset coordinates in the exposure coordinate report are [-1,0], and the corresponding Focus value in the exposure coordinate batch report, i.e., the exposure machine Lot report Focus type, is -0.02. Then, in the exposure coordinate report, the -1 on the horizontal axis will be replaced with -0.02. Similarly, the horizontal axis of the entire exposure coordinate report is replaced with the Focus value in the exposure machine Lot report Focus type. Similarly, the vertical axis of the entire exposure coordinate report is replaced with the Energy value in the exposure machine Lot report Energy type, and the focus energy matrix report corresponding to the exposure coordinate report is obtained.

[0133] In one of the embodiments, the step of obtaining each exposure focus value of the target chipset with each Y exposure coordinate value of zero in the exposure coordinate batch report further includes the following steps:

[0134] The exposure batch report of the target wafer is rotated so that the vertical axis of the exposure batch report is consistent with the Y-axis direction of the exposure coordinate, and an exposure coordinate batch report of the target chipset in the exposure coordinate is obtained; wherein the exposure coordinate batch report includes an exposure focus value report and an exposure energy value report.

[0135] When the exposure machine exposes the target wafer, the Y-axis coordinate has a certain angle with the positive direction of the Y-axis of the exposure coordinate, that is, the exposure batch report of the exposure machine has a certain angle with the positive direction of the Y-axis of the exposure coordinate (Scanner Notch). Before obtaining the focus energy matrix report of the target wafer, it is necessary to first rotate the exposure batch report to the exposure coordinate batch report, and then match the exposure coordinate report with the exposure coordinate batch report to obtain the focus energy matrix report of the target wafer. For example, if the Scanner Notch is 90°, rotate the exposure batch report 90° counterclockwise; if the Scanner Notch is 270°, rotate the exposure batch report 270° counterclockwise; if the Scanner Notch is 180°, rotate the exposure batch report 180° counterclockwise / clockwise.

[0136] In one of the embodiments, the method further includes: obtaining a test image corresponding to the measurement data file, and storing the test image in a network storage of the processing server.

[0137] The above-mentioned method for processing semiconductor device measurement data is applied to a processing server, including establishing data transmission between the processing server and a measuring machine server; obtaining a measurement data file on the measuring machine server; converting the measurement data file into a preset report, and storing the preset report in a database of the processing server. This application converts the measurement data file into a preset report, and stores the preset report in the database of the processing server. Engineers can call and view the preset report in the database of the processing server when needed, thereby avoiding the problem that when engineers view measurement reports provided by different measuring machines, they need to spend time processing measurement data because the measurement reports are quite different or the measurement reports do not meet the requirements of measurement result analysis.

[0138] like Figure 6 As shown, in one embodiment, a method for processing semiconductor device measurement data is provided, which is applied to a client server and includes:

[0139] S602, establishing data transmission between the client server and the measurement machine server.

[0140] The client server obtains the server information (FTP server information) of the measuring machine to be connected, and then logs in to the measuring machine FTP Server according to the login information to establish data transmission between the client server and the measuring machine server.

[0141] S604, obtaining the measurement data file on the measurement machine server.

[0142] After establishing data transmission between the client server and the measuring machine server, obtain the measurement data file on the measuring machine server, that is, obtain the file including the measurement data saved after the measuring machine tests the product.

[0143] S606: Convert the data file into a preset report.

[0144] After the client server obtains the measurement data file, it converts the measurement data file into a preset report according to the report type set by the user. The user can set the data type of the preset report as needed. After obtaining the preset report from the client server, the data in the preset report is analyzed to obtain the measurement result. After obtaining the measurement data, there is no need to manually match the measurement data of different measurement machines to generate a report in a unified format that meets the requirements. This saves the time for data conversion, improves work efficiency, and can quickly obtain the information stored in the measurement data. The user can log in to the client server as needed to obtain the required preset report, avoiding the restrictions on the login requirements of the measurement machine.

[0145] like Figure 7 As shown, in one embodiment, the preset report includes an exposure coordinate report, and the step of converting the data file into the preset report includes:

[0146] S702, obtaining exposure coordinate data of each target chipset on the target wafer.

[0147] A wafer measured by a measuring machine is selected as a target wafer, and exposure coordinate data of each target chipset on the target wafer is obtained, wherein the exposure coordinate data includes an X exposure coordinate value, a Y exposure coordinate value, and a chipset characteristic size value.

[0148] S704: Arrange the X exposure coordinate values ​​of the target chipsets from small to large to serve as the horizontal axis of the exposure coordinate report.

[0149] S706, arranging the Y exposure coordinate values ​​of the target chipsets from large to small as the vertical axis of the exposure coordinate report.

[0150] S708, setting the chipset characteristic size value of each of the target chipsets in the exposure coordinate report to obtain an exposure coordinate report of the target wafer.

[0151] Based on the exposure coordinate report, the user can intuitively see the actual distribution of the target wafer feature size values, and then perform process adjustments, abnormality analysis and other operations based on the distribution of the feature size values, without having to manually map the abnormal data in the measurement data table to the target wafer and then perform data analysis.

[0152] In one embodiment, the measurement data file includes a chip coordinate data file, and the step of obtaining the exposure coordinate data file of each target chip group on the target wafer includes:

[0153] Acquire chip coordinate data of each target chip on the target wafer, wherein the chip coordinate data includes an X chip coordinate value, a Y chip coordinate value, and a chip characteristic size value;

[0154] The target chips in row A and column B are taken as a target chipset group;

[0155] The sum of the X chip coordinate value and 1 is divided by A, the value is taken by the ceil function, and then 1 is subtracted to obtain the X exposure coordinate value corresponding to the X chip coordinate value;

[0156] The sum of the Y chip coordinate value and 1 is divided by B, the value is taken by the ceil function, and then 1 is subtracted to obtain the Y exposure coordinate value corresponding to the Y chip coordinate value;

[0157] The characteristic size values ​​of the target chips having the same X exposure coordinate value and the same Y exposure coordinate value are averaged as the characteristic size value of the chipset corresponding to the X exposure coordinate value and the Y exposure coordinate value.

[0158] In one embodiment, the preset report also includes a focus energy matrix report, and the step of converting the measurement data file into the preset report also includes:

[0159] Obtaining each exposure focus value of the target chipset with each Y exposure coordinate value of zero in the exposure coordinate batch report;

[0160] Acquire each exposure energy value of the target chipset with each X exposure coordinate value of zero in the exposure coordinate batch report;

[0161] The focus energy matrix report of the target wafer is obtained by taking each of the exposure focus values ​​as the horizontal axis of the exposure coordinate report and taking each of the exposure energy values ​​as the vertical axis of the exposure coordinate report.

[0162] In one of the embodiments, the step of obtaining each exposure focus value of the target chipset with each Y exposure coordinate value of zero in the exposure coordinate batch report further includes the following steps:

[0163] Rotate the exposure batch report of the target wafer so that the vertical axis of the exposure batch report is consistent with the Y-axis direction of the exposure coordinate, and obtain an exposure coordinate batch report of the target chipset in the exposure coordinate;

[0164] The exposure coordinate batch report includes an exposure focus value report and an exposure energy value report.

[0165] The above-mentioned method for processing semiconductor device measurement data applied to a client server is similar to the method for processing semiconductor device measurement data applied to a processing server. The technical features and beneficial effects described in the embodiment of the above-mentioned method for processing semiconductor device measurement data applied to a processing server are all applicable to the embodiment of the method for processing semiconductor device measurement data applied to a client server, and this is hereby declared.

[0166] The above-mentioned method for processing semiconductor device measurement data is applied to a client server, including: establishing data transmission between the client server and the measurement machine server; obtaining the measurement data file on the measurement machine server; converting the data file into a preset report. By converting the measurement data file into a preset report, the present application avoids the problem of engineers having to spend time processing measurement data when viewing measurement reports provided by different measurement machines due to large differences in measurement reports or measurement reports not meeting the requirements for measurement result analysis.

[0167] In one embodiment, a system for processing semiconductor device measurement data is provided, comprising:

[0168] A data reading module is connected to the measuring machine and is used to obtain the measurement data file of the measuring machine;

[0169] The data conversion module is connected to the data reading module and is used to convert the measurement data file into a preset report.

[0170] In one embodiment, the preset report includes an exposure coordinate report; the data conversion module is used to obtain exposure coordinate data of each target chipset on the target wafer in the measurement data file, and the exposure coordinate data includes an X exposure coordinate value, a Y exposure coordinate value and a chipset feature size value;

[0171] The data conversion module is further used to arrange the X exposure coordinate values ​​of each of the target chipsets from small to large as the horizontal axis of the exposure coordinate report; arrange the Y exposure coordinate values ​​of each of the target chipsets from large to small as the vertical axis of the exposure coordinate report; and set the chipset feature size value of each of the target chipsets in the exposure coordinate report to obtain the exposure coordinate report of the target wafer.

[0172] The semiconductor device measurement data processing system of the present invention corresponds one to one with the semiconductor device measurement data processing method. The technical features and beneficial effects described in the embodiment of the semiconductor device measurement data processing method are applicable to the embodiment of the semiconductor device measurement data processing system, which is hereby declared.

[0173] The above-mentioned semiconductor device measurement data processing system includes: a data reading module, connected to the measuring machine, used to obtain the measurement data file of the measuring machine; a data conversion module, connected to the data reading module, used to convert the measurement data file into a preset report. The present application converts the measurement data file into a preset report through the data conversion module, thereby avoiding the problem that when engineers view the measurement reports provided by different measuring machines, they need to spend time processing the measurement data because the measurement reports are quite different or the measurement reports do not meet the requirements of the measurement result analysis.

[0174] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of any one of the above methods when executing the computer program.

[0175] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the steps of any of the above methods are implemented.

[0176] The above-mentioned computer device and computer-readable storage medium include a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of any of the above-mentioned methods when executing the computer program. The present application converts the measurement data file into a preset report, thereby avoiding the problem that when engineers view the measurement reports provided by different measurement machines, they need to spend time processing the measurement data because the measurement reports are quite different or the measurement reports do not meet the requirements of the measurement result analysis.

[0177] The technical features of the above embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0178] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A method for processing semiconductor device measurement data, applied to a processing server, comprising: Establishing data transmission between the processing server and the measuring machine server; Acquire a measurement data file on the measurement machine server, wherein the measurement data file includes a chip coordinate data file; Converting the measurement data file into a preset report, and storing the preset report in a database of the processing server, wherein the preset report includes an exposure coordinate report; The step of converting the measurement data file into a preset report includes obtaining exposure coordinate data of each target chipset on the target wafer, The step of obtaining exposure coordinate data of each target chipset on the target wafer comprises: Acquire chip coordinate data of each target chip on the target wafer, wherein the chip coordinate data includes an X chip coordinate value, a Y chip coordinate value, and a chip characteristic size value; The target chips in row A and column B are taken as a target chipset group; The sum of the X chip coordinate value and 1 is divided by A, the value is taken by the ceil function, and then 1 is subtracted to obtain the X exposure coordinate value corresponding to the X chip coordinate value; The sum of the Y chip coordinate value and 1 is divided by B, the value is taken by the ceil function, and then 1 is subtracted to obtain the Y exposure coordinate value corresponding to the Y chip coordinate value; An average value of the characteristic size values ​​of the target chips having the same X exposure coordinate value and the same Y exposure coordinate value is taken as the characteristic size value of the chipset corresponding to the X exposure coordinate value and the Y exposure coordinate value.

2. The processing method according to claim 1, characterized in that: The step of converting the measurement data file into a preset report comprises: Acquire exposure coordinate data of each target chipset on the target wafer, wherein the exposure coordinate data includes an X exposure coordinate value, a Y exposure coordinate value, and a chipset feature size value; Arrange the X exposure coordinate values ​​of each target chipset from small to large as the horizontal axis of the exposure coordinate report; Arrange the Y exposure coordinate values ​​of each of the target chipsets from large to small as the vertical axis of the exposure coordinate report; The chipset characteristic size value of each of the target chipsets is set in the exposure coordinate report to obtain the exposure coordinate report of the target wafer.

3. The processing method according to claim 2, characterized in that: The preset report also includes a focus energy matrix report, and the step of converting the data file into a preset report also includes: Obtaining each exposure focus value of the target chipset with each Y exposure coordinate value of zero in the exposure coordinate batch report; Acquire each exposure energy value of the target chipset with each X exposure coordinate value of zero in the exposure coordinate batch report; The focus energy matrix report of the target wafer is obtained by taking each of the exposure focus values ​​as the horizontal axis of the exposure coordinate report and taking each of the exposure energy values ​​as the vertical axis of the exposure coordinate report.

4. The processing method according to claim 3, characterized in that: The step of obtaining each exposure focus value of the target chipset with each Y exposure coordinate value of zero in the exposure coordinate batch report also includes the following steps: Rotate the exposure batch report of the target wafer so that the vertical axis of the exposure batch report is consistent with the Y-axis direction of the exposure coordinate, and obtain an exposure coordinate batch report of the target chipset in the exposure coordinate; The exposure coordinate batch report includes an exposure focus value report and an exposure energy value report.

5. The processing method according to claim 1, characterized in that: The method further comprises: A test image corresponding to the measurement data file is obtained, and the test image is stored in a network storage of the processing server.

6. A method for processing semiconductor device measurement data, applied to a client server, comprising: Establishing data transmission between the client server and the measuring machine server; Acquire a measurement data file on a measurement machine server, wherein the measurement data file includes a chip coordinate data file; Converting the measurement data file into a preset report, wherein the preset report includes an exposure coordinate report; The step of converting the measurement data file into a preset report includes obtaining exposure coordinate data of each target chipset on the target wafer, The step of obtaining exposure coordinate data of each target chipset on the target wafer comprises: Acquire chip coordinate data of each target chip on the target wafer, wherein the chip coordinate data includes an X chip coordinate value, a Y chip coordinate value, and a chip characteristic size value; The target chips in row A and column B are taken as a target chipset group; The sum of the X chip coordinate value and 1 is divided by A, the value is taken by the ceil function, and then 1 is subtracted to obtain the X exposure coordinate value corresponding to the X chip coordinate value; The sum of the Y chip coordinate value and 1 is divided by B, the value is taken by the ceil function, and then 1 is subtracted to obtain the Y exposure coordinate value corresponding to the Y chip coordinate value; An average value of the characteristic size values ​​of the target chips having the same X exposure coordinate value and the same Y exposure coordinate value is taken as the characteristic size value of the chipset corresponding to the X exposure coordinate value and the Y exposure coordinate value.

7. The processing method according to claim 6, characterized in that: The step of converting the measurement data file into a preset report comprises: Acquire exposure coordinate data of each target chipset on the target wafer, wherein the exposure coordinate data includes an X exposure coordinate value, a Y exposure coordinate value, and a chipset feature size value; Arrange the X exposure coordinate values ​​of each target chipset from small to large as the horizontal axis of the exposure coordinate report; Arrange the Y exposure coordinate values ​​of each of the target chipsets from large to small as the vertical axis of the exposure coordinate report; The chipset characteristic size value of each of the target chipsets is set in the exposure coordinate report to obtain the exposure coordinate report of the target wafer.

8. The processing method according to claim 7, characterized in that: The preset report also includes a focus energy matrix report, and the step of converting the measurement data file into a preset report also includes: Obtaining each exposure focus value of the target chipset with each Y exposure coordinate value of zero in the exposure coordinate batch report; Acquire each exposure energy value of the target chipset with each X exposure coordinate value of zero in the exposure coordinate batch report; The focus energy matrix report of the target wafer is obtained by taking each of the exposure focus values ​​as the horizontal axis of the exposure coordinate report and taking each of the exposure energy values ​​as the vertical axis of the exposure coordinate report.

9. The processing method according to claim 8, characterized in that: The step of obtaining each exposure focus value of the target chipset with each Y exposure coordinate value of zero in the exposure coordinate batch report also includes the following steps: Rotate the exposure batch report of the target wafer so that the vertical axis of the exposure batch report is consistent with the Y-axis direction of the exposure coordinate, and obtain an exposure coordinate batch report of the target chipset in the exposure coordinate; The exposure coordinate batch report includes an exposure focus value report and an exposure energy value report.

10. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 9 are implemented.

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