Substrate processing system and method

Abstract

The present invention provides a substrate processing system and method. The processing system includes a sub-module frame with an opening, a tray, and a thin film. Among them, the sub-module frame is movably arranged on the tray; the thin film is coupled to the sub-module frame and covers the opening. The thin film is provided with a mounting opening, and the area of the mounting opening is less than or equal to the area of the opening. The mounting opening is used for coupling a substrate. Among them, the area of the mounting opening is smaller than the area of the substrate. When the substrate is coupled to the thin film, the substrate covers the mounting opening. By movably arranging the sub-module frame on the tray, the present invention facilitates the substrate processing system to realize the flipping and switching between the upper surface and the lower surface of the substrate during substrate processing. At the same time, it avoids the problem of replacing different trays when switching the substrate processing surface in the process chamber of the system, does not require the classification and placement of different trays, reduces the production cost, and more importantly, avoids the pollution of the substrate.

Description

Technical Field

[0001] The present invention relates to the technical field of photovoltaic and solar cells, and particularly to a substrate processing system and method. Background Art

[0002] Currently, the process of heterojunction cell unit processing is decomposed into three separate systems. For example, in the process system for processing substrates, it is necessary to form textured surfaces on both sides of the substrate, deposit three thin films on both sides of the substrate using plasma-enhanced chemical vapor deposition and physical vapor deposition, then place the processed substrate in a substrate cassette and load it onto a tray or conveyor system to be processed. After that, the completed substrate is collected in the substrate cassette and flipped to enter another system.

[0003] Since each system has its own way of transporting substrates, the trays used by each system are often different, which may cause dopants to contaminate the substrates during the processing. Moreover, during daily management, it is also necessary to ensure that the trays used when entering from one system to another are not mixed together, so operations are required to separate different substrate tray groups, which greatly increases the inventory cost. Summary of the Invention

[0004] The purpose of the present invention is to provide a substrate processing system and method, which reduce the production cost and at the same time reduce the possibility of the substrate being contaminated by dopants during processing.

[0005] To achieve the above purpose, in the first aspect, the present invention provides a substrate processing system, including a sub-module frame with an opening, a tray, and a thin film. Among them, the sub-module frame is movably arranged on the tray; the thin film is coupled to the sub-module frame and covers the opening. The thin film is provided with an installation opening, and the area of the installation opening is less than or equal to the area of the opening. The installation opening is used to couple the substrate; wherein, the area of the installation opening is less than the area of the substrate. When the substrate is coupled to the thin film, the substrate covers the installation opening.

[0006] The beneficial effect of the substrate processing system provided by the present invention is that by movably arranging the sub-module frame on the tray, it is convenient for the substrate processing system to realize the flipping and switching of the upper and lower surfaces of the substrate during substrate processing. At the same time, it avoids the problem of replacing different trays when switching the substrate processing surface in the process chamber of the system, does not require classifying and placing different trays, reduces the production cost, and more importantly, avoids contaminating the substrate.

[0007] Optionally, it further includes a transfer track, a tray loading station, a preheating station, a processing station, a cooling station, and a tray unloading station. The tray loading station, the preheating station, the processing station, the cooling station, and the tray unloading station are arranged in sequence. The transfer track is used to sequentially move the tray with the substrate to the tray loading station, the preheating station, the processing station, the cooling station, and the tray unloading station. Among them, the processing station includes several flipping stations, and the flipping stations are used to flip the sub-module frame in the tray in the vacuum chamber of the flipping station. The beneficial effects are as follows: By arranging the tray loading station, the preheating station, the processing station, the cooling station, and the tray unloading station in sequence, the transfer track can sequentially transfer the substrate to be processed to each process station in the system for processing. More importantly, the processing station includes several flipping stations, and the flipping stations are used to flip the sub-module frame in the tray in the vacuum chamber of the flipping station, realizing the automatic flipping and switching between the upper surface and the lower surface of the substrate, improving the efficiency of substrate processing, and avoiding the possible contamination caused by replacing the tray when taking the substrate in and out.

[0008] Optionally, the processing station at least includes the PECVD station and the PVD station among the etching station, the plasma enhanced chemical vapor deposition PECVD station, and the physical vapor deposition PVD station. The etching station is used for dry etching of the substrate; the PECVD station is used for PECVD deposition of the substrate; the PVD station is used for PVD deposition of the substrate. Among them, flipping stations are provided in the etching station, the PECVD station, and the PVD station. The beneficial effects are as follows: By arranging flipping stations in the etching station, the PECVD station, and the PVD station, the upper surface and the lower surface of the substrate can be switched in the working vacuum environment without cooling the substrate to exit the vacuum environment and reheating the substrate to enter the vacuum environment, reducing energy waste, further improving the efficiency of substrate processing, and avoiding the possible contamination caused by replacing the tray when taking the substrate in and out, reducing production costs.

[0009] Optionally, several mounting openings are provided at intervals on the thin film, and the several mounting openings are used to couple and arrange the substrates in sequence. When the substrates are coupled and arranged through the several mounting openings, the distance between the upper surface of the substrate and the upper surface of the sub-module frame is equal to the distance between the lower surface of the substrate and the lower surface of the sub-module frame. The beneficial effects are as follows: A group of substrates can be processed, improving production efficiency, and the distance between the upper surface of the substrate and the upper surface of the sub-module frame is equal to the distance between the lower surface of the substrate and the lower surface of the sub-module frame, ensuring uniform consistency when processing the upper surface and the lower surface of the substrate.

[0010] Optionally, the tray further includes a radio frequency gasket and a purging device. The radio frequency gasket forms a grounding loop between the tray and the chamber body of the processing station. The purging device is used to form an air wall to separate the substrate and the tray. The beneficial effects are as follows: By providing the purging device to separate the processing area of the substrate and the tray, it is avoided that process gases contaminate the tray and deposit in unnecessary areas. And by providing the equipment gasket to form a grounding loop, the stability during production and processing is improved.

[0011] Optionally, the system further includes a load lock and an unload lock. The load lock is disposed between the tray loading station and the preheating station, and is used to transfer the substrate from the atmospheric environment to the vacuum environment in the system; the unload lock is disposed between the processing station and the cooling station, and is used to transfer the substrate from the vacuum environment in the system to the atmospheric environment. The beneficial effects are as follows: By providing the load lock and the unload lock, the reaction chamber in the system is always in a vacuum environment, ensuring good conditions for production and processing and improving the reliability of the system for processing substrates.

[0012] In a second aspect, the present invention provides a method for processing a substrate. Based on the above system, the method includes:

[0013] Couple the substrate to the mounting port; sequentially form a first I layer and an N-type ion layer on the upper surface of the substrate; the flipping station flips the sub-module frame, and sequentially form a second I layer and a P-type ion layer on the lower surface of the substrate.

[0014] The beneficial effects of the method for processing a substrate provided by the present invention are as follows: By using a unified tray and flipping the sub-module frame, the switching between the upper surface and the lower surface of the substrate is realized, and a first I layer and an N-type ion layer are sequentially formed on the upper surface of the substrate, and a second I layer and a P-type ion layer are sequentially formed on the lower surface of the substrate, improving the efficiency of processing the substrate and reducing the production cost.

[0015] Optionally, before sequentially forming a first I layer and an N-type ion layer on the upper surface of the substrate, it includes: performing texturing treatment on the upper surface and the lower surface of the substrate. The beneficial effects are as follows: Performing texturing treatment on the upper surface and the lower surface of the substrate improves the reliability of subsequent substrate processing.

[0016] Optionally, after the flipping station flips the sub-module frame and sequentially forms a second I layer and a P-type ion layer on the lower surface of the substrate, it includes: forming a first conductive layer on the lower surface of the substrate; the flipping station flips the sub-module frame; forming a second conductive layer on the upper surface of the substrate. The beneficial effects are as follows: By the flipping station producing conductive layers on the upper surface and the lower surface of the substrate, the production efficiency is improved and the possibility of contaminating the substrate is reduced.

[0017] Optionally, after forming the second conductive layer on the upper surface of the substrate, it further includes: forming a first bus bar communicating with the lower surface of the first conductive layer and the thin film, and forming a second bus bar communicating with the upper surface of the second conductive layer and the thin film. The beneficial effect is that by forming a first bus bar and a second bus bar on the substrate and the thin film, it facilitates the subsequent generation of conductive wires.

[0018] Optionally, when forming a set of modules, a first conductive wire is formed on the first bus bar, and a second conductive wire is formed on the second bus bar. Or, when forming more than two sets of modules, two or more of the thin films are stacked in sequence. The thin film has a first side and a second side arranged oppositely. The second side of the upper thin film is superposed on the first side of the lower thin film, and a through hole is formed between the first bus bar of the upper thin film and the second bus bar of the lower thin film. A first conductive wire is formed on the first bus bar, and a second conductive wire is formed on the second bus bar. The beneficial effect is that it realizes the setting of conductive wires for a set of modules or more than two sets of modules. It should be noted that when forming more than two sets of modules in this way, the entire substrate is exposed to sunlight, increasing the light receiving area.

[0019] Optionally, a first polymer film and a first glass are sequentially arranged on the upper surface of the set of modules, and a second polymer film and a second glass are sequentially arranged on the lower surface of the set of modules. Or, a first polymer film and a first glass are sequentially arranged on the upper surface of the more than two sets of modules, and a second polymer film and a second glass are sequentially arranged on the lower surface of the more than two sets of modules. The beneficial effect is that it realizes the manufacture of solar modules.

[0020] Optionally, when forming the modules of the more than two sets of modules, the upper thin film and the lower thin film are adhesively connected. The beneficial effect is that the connection of multiple thin films is realized through the form of adhesive connection. This connection method is simple, does not require the use of precision connecting wires to stack and weld the bus bars, and does not affect the power generation surface.

[0021] Optionally, the first conductive layer is a first indium tin oxide (ITO) layer doped with tin, and the second conductive layer is a second indium tin oxide (ITO) layer doped with tin. The beneficial effect is that using the indium tin oxide (ITO) layer doped with tin as the first conductive layer and the second conductive layer improves the reliability of the substrate's conductivity. Description of the Drawings

[0022] Figure 1 It is a schematic structural diagram of the substrate of the present invention arranged in the module frame through the thin film;

[0023] Figure 2 It is a schematic structural diagram of the tray of the present invention;

[0024] Figure 3 Cross-sectional view of the substrate after being installed on the sub-module frame disclosed in the present invention;

[0025] Figure 4 System diagram of the method for processing a substrate by dry etching and texturing disclosed in the present invention;

[0026] Figure 5 System diagram of the method for preparing a solar cell by wet texturing disclosed in the present invention;

[0027] Figure 6 Another system diagram of the method for preparing a solar cell by wet texturing disclosed in the present invention;

[0028] Figure 7 Schematic structural diagram of the PECVD station in the working state disclosed in the present invention;

[0029] Figure 8 Schematic structural diagram of the PECVD station in the non-working state disclosed in the present invention;

[0030] Figure 9 Flow chart of the method for processing a substrate disclosed in the present invention;

[0031] Figure 10 Schematic structural diagram of a group of modules including the front view and the side view disclosed in the present invention;

[0032] Figure 11 Schematic structural diagram of a second group of modules including the front view and the side view disclosed in the present invention;

[0033] Figure 12 Schematic structural diagram of the solar cell module disclosed in the present invention.

[0034] Reference numerals:

[0035] Thin film 1, sub-module frame 2, substrate 3, pushing end 4, sealing end 5;

[0036] Tray loading station 10; First front PECVD station 211, Second front PECVD station 212, First rear PECVD station 213, Second rear PECVD station 214, First physical vapor deposition station 221, Second physical vapor deposition station 222, Preheating station 23, Pressure buffer chamber 24, First texturing chamber 251, Second texturing chamber 252; Turning station 30; Tray 40, RF gasket 41, Purge device 42; Load lock 50; Unload lock 60; Tray unloading station 70, Cooling station 80;

[0037] First polymer film 101, Second polymer film 102, First bus bar 103, Second bus bar 104, First glass 105, Second glass 106. Detailed implementation mode

[0038] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings understood by those of ordinary skill in the art to which the present invention pertains. The words such as "including" used herein are intended to mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects.

[0039] Currently, the process of heterojunction cell unit processing is decomposed into three separate systems, each system having its own transportation method, so the pallets used in each system cause dopants to contaminate the substrates with each other when the substrates are surface-treated in different systems. Moreover, during daily management, it is also necessary to ensure that the pallets used when entering from one system to another are not mixed together, so it is also necessary to separate different substrate pallet groups, greatly increasing the inventory cost and labor cost.

[0040] In view of the existing problems, the embodiments of the present invention provide a substrate processing system. Referring to Figure 1 and Figure 2 as shown, the system includes a sub-module frame 2 with an opening, a pallet 40, and a film 1. Among them, the sub-module frame 2 is movably arranged on the pallet 40, the film 1 is coupled to the sub-module frame 2 and covers the opening. The film 1 is provided with a mounting opening, and the area of the mounting opening is less than or equal to the area of the opening of the film 1. The mounting opening provided on the film 1 is used to couple the substrate 3. In addition, the area of the mounting opening is less than the area of the substrate 3. When the substrate 3 is coupled to the film 1, the substrate 3 covers the mounting opening of the film 1.

[0041] It should be noted that, as shown in Figure 3 , generally, a plurality of mounting openings are arranged at intervals on the film 1, and the plurality of mounting openings are used to sequentially couple and arrange the substrates 3. When the plurality of mounting openings are coupled to arrange the substrates 3, the distance between the upper surface of the substrate 3 and the upper surface of the sub-module frame 2 is equal to the distance between the lower surface of the substrate 3 and the lower surface of the sub-module frame 2, which can process a group of substrates 3, improving the production efficiency. Moreover, the distance between the upper surface of the substrate 3 and the upper surface of the sub-module frame 2 is equal to the distance between the lower surface of the substrate 3 and the lower surface of the sub-module frame 2, ensuring the uniformity when processing the upper surface and the lower surface of the substrate 3.

[0042] In this embodiment, by movably arranging the sub-module frame 2 on the tray 40, it is convenient for the substrate 3 processing system to realize the flipping and switching between the upper surface and the lower surface of the substrate 3 during the processing of the substrate 3. At the same time, it avoids the problem of replacing different trays 40 when switching the processing surface of the substrate 3 in the process chamber of the system, does not require classifying and placing different trays 40, reduces the production cost, and more importantly, avoids the contamination of the substrate 3.

[0043] Optionally, the system further includes a transfer track, a tray loading station 10, a preheating station 23, a processing station, a cooling station 80, and a tray unloading station 70. Refer to Figure 4 As shown, the tray loading station 10, the preheating station 23, the processing station, the cooling station 80, and the tray unloading station 70 are arranged in sequence. The transfer track is used to sequentially move the tray 40 provided with the substrate 3 into the tray loading station 10, the preheating station 23, the processing station, the cooling station 80, and the tray unloading station 70 for processing. It should be noted that the processing station includes several flipping stations 30, and the several flipping stations 30 are used to flip the sub-module frame 2 in the tray 40 in the vacuum chamber of the flipping station 30.

[0044] By arranging the tray loading station 10, the preheating station 23, the processing station, the cooling station 80, and the tray unloading station 70 in sequence, the transfer track can sequentially transfer the substrate 3 to be processed to each process station in the system for processing. More importantly, the processing station includes several flipping stations 30, and the flipping stations 30 are used to flip the sub-module frame 2 in the tray 40 in the vacuum chamber of the flipping station 30, realizing the automatic flipping and switching between the upper surface and the lower surface of the substrate 3, improving the processing efficiency of the substrate 3, and avoiding the possible contamination caused by replacing the tray 40 when taking the substrate 3 in and out.

[0045] Optionally, the processing station at least includes the PECVD station and the PVD station among the etching station, the plasma enhanced chemical vapor deposition PECVD station, and the physical vapor deposition PVD station. The etching station is used for dry etching of the substrate 3, the PECVD station is used for PECVD deposition of the substrate 3, and the PVD station is used for PVD deposition of the substrate 3. Among them, flipping stations 30 are provided in the etching station, the PECVD station, and the PVD station.

[0046] By arranging a turning station 30 in each of the etching station, PECVD station and PVD station, the upper and lower surfaces of the substrate can be switched in the working vacuum environment, without the need to cool the substrate and exit the vacuum environment and reheat the substrate to enter the vacuum environment, reducing energy waste, lowering production costs, further improving the efficiency of processing the substrate 3, and avoiding possible contamination caused by replacing the tray 40 when taking the substrate 3 in and out. It should be noted that in this embodiment, dry etching and texturing are adopted, and the configuration of the etching station is for processing the substrate 3 by the method of dry etching and texturing. The etching station is arranged between the preheating station 23 and the load lock 50. The etching station includes a first texturing chamber 251 and a second texturing chamber 252. One turning station 30 is arranged between the first texturing chamber 251 and the second texturing chamber 252. The first texturing chamber 251 is used for texturing the lower surface of the substrate 3, and the turning station 30 is used for turning the substrate 3 so that the second texturing chamber 252 is used for texturing the upper surface of the substrate 3. Refer to Figure 5 as shown Figure 5 is a schematic structural diagram of a system adopting wet etching. It should be noted that when wet texturing is adopted, the substrate 3 will be textured in advance, so the etching station is not configured in the system.

[0047] Optionally, specifically referring to Figure 2 as shown, the tray 40 further includes a radio frequency gasket 41 and a purging device 42. The radio frequency gasket 41 forms a grounding loop between the tray 40 and the chamber body of the processing station, and the purging device 42 is used to form an air wall to separate the substrate 3 and the tray 40. By setting the purging device 42 to separate the processing area of the substrate 3 and the tray 40, it is avoided that the process gas contaminates the tray 40, and by setting the radio frequency gasket 41 to form a grounding loop, the stability during production and processing is improved.

[0048] Furthermore, in order to ensure good conditions for production and processing and improve the reliability of the system for processing the substrate, the system further includes a load lock 50 and an unload lock 60. The load lock 50 is arranged between the tray loading station 10 and the preheating station 23, and the load lock 50 is used to transfer the substrate 3 from the atmospheric environment to the vacuum environment in the system. The unload lock 60 is arranged between the processing station and the cooling station 80, and the unload lock 60 is used to transfer the substrate 3 from the vacuum environment in the system to the atmospheric environment. By setting the load lock 50 and the unload lock 60, the reaction chamber in the system is always in a vacuum environment.

[0049] In another embodiment disclosed in the present invention, a processing system for a substrate 3 is provided. Refer to Figure 6As shown, the system includes a tray loading station 10, a preheating station 23, a processing station, a tray 40, a cooling station 80, a tray unloading station 70, and a transport mechanism (not shown in the figure). Among them, the tray loading station 10 is used to place the tray 40. The tray 40 is arranged on the transport mechanism, and the transport mechanism is used to move the tray 40 from the tray loading station 10 to the processing station. The processing station includes a flipping station 30. When the tray 40 moves to the flipping station 30, the tray 40 will be flipped in the vacuum chamber in the flipping station 30 to realize the flipping conversion of the upper surface and the lower surface of the substrate 3. The processing station is used to process the substrate 3, and form a first intrinsic amorphous silicon layer (first I layer) and an N-type ion layer on the upper surface of the substrate 3, and form a second intrinsic amorphous silicon layer (second I layer) and a P-type ion layer on the lower surface of the substrate 3. The tray unloading station 70 is used to store or unload the processed substrate 3 to facilitate the subsequent processing of the substrate 3.

[0050] Specifically, the processing station includes a plasma enhanced chemical vapor deposition PECVD station, and the PECVD station further includes a first pre-PECVD station 211, a second pre-PECVD station 212, a first post-PECVD station 213, and a second post-PECVD station 214. The first pre-PECVD station 211, the second pre-PECVD station 212, the flipping station 30, the first post-PECVD station 213, and the second post-PECVD station 214 are arranged in sequence. After forming the first I layer and the N-type ion layer on the upper surface of the substrate 3 first, the surface of the substrate 3 to be processed is rotated to the lower surface through the flipping station 30, and then the second I layer and the P-type ion layer are formed on the lower surface.

[0051] It should be noted that in some embodiments, referring to Figure 5 As shown, by arranging the first pre-PECVD station 211, the flipping station 30, the first post-PECVD station 213, the second post-PECVD station 214, the flipping station 30, and the second pre-PECVD station 212 in sequence, a first I layer and an N-type ion layer are formed on the upper surface of the substrate 3, and a second I layer and a P-type ion layer are formed on the lower surface of the substrate 3.

[0052] Combined with Figure 7 and Figure 8 As shown, when the tray 40 is moved to the PECVD station on the transport mechanism, it enters the working state. The pushing end 4 of the PECVD station pushes the tray 40 to make the tray 40 fit with the sealing end 5 to form a reaction sealing cavity and a grounding circuit. The reaction sealing cavity can accommodate reaction gases for process treatment on the surface of the substrate 3. When it enters the non-working state after completion, the pushing end 4 moves back to make the tray 40 return to the track of the transport mechanism and move to the next station for processing.

[0053] By arranging a turning station 30 between the first front PECVD station 211, the second front PECVD station 212, the first rear PECVD station 213 and the second rear PECVD station 214, and switching the upper and lower surfaces of the substrate 3 in the tray 40 through the turning station 30, the processing efficiency of the substrate 3 is improved, and the adverse effects caused by the need to replace the tray 40 are avoided.

[0054] Optionally, the processing station further includes a physical vapor deposition PVD station, which further includes a first physical vapor deposition station 221 and a second physical vapor deposition station 222. The first physical vapor deposition station 221 and the second physical vapor deposition station 222 are sequentially arranged after the PECVD station. A turning station 30 is arranged between the first physical vapor deposition station 221 and the second physical vapor deposition station 222. The first physical vapor deposition station 221 is used to form a first conductive layer on the P-type ion layer, and the second physical vapor deposition station 222 is used to form a second conductive layer on the N-type ion layer. By arranging the turning station 30 between the first physical vapor deposition station 221 and the second physical vapor deposition station 222, the efficiency of forming the first conductive layer and the second conductive layer on the substrate 3 is improved.

[0055] In addition, the system further includes an unloading lock 60 and a loading lock 50. Since the inside of the processing station is a vacuum environment, and in order to ensure that the substrate 3 does not damage the vacuum environment in the processing station during transportation, the loading lock 50 is arranged between the tray loading station 10 and the preheating station 23, which is used to ensure that the substrate 3 is transferred from the atmospheric environment to the vacuum environment in the processing station, avoiding damaging the vacuum environment in the processing station. The unloading lock 60 is arranged between the cooling station 80 and the processing station, which is used to transfer the substrate 3 from the vacuum environment in the processing station to the atmospheric environment, so as to ensure that the substrate 3 has a good working environment in the processing station and further improve the reliability of the system for processing the substrate 3.

[0056] Furthermore, the processing station further includes a pressure buffer chamber 24. Among them, the pressure buffer chamber 24 is arranged between the PECVD station and the PVD station. The pressure buffer chamber 24 is used to adjust the atmospheric pressure of the substrate 3 entering the PVD station from the PECVD station because the pressure in each processing chamber in the processing station may be different. The preheating station 23 is arranged between the loading lock 50 and the PECVD, which is used to adjust the temperature of the substrate 3 entering the PECVD station. By configuring the preheating station 23, the substrate 3 is preheated before entering the processing station, which improves the efficiency of the PECVD station in forming the intrinsic amorphous silicon layer and the ion layer on the surface of the substrate 3 and ensures the reliability of the formation. Arranging the pressure buffer chamber 24 between the PECVD station and the PVD station ensures the pressure requirement of the substrate 3 entering the PVD station, and further guarantees the efficiency and reliability of forming the conductive layer on the substrate 3.

[0057] It should be noted that the cooling station 80 is arranged between the tray unloading station 70 and the unloading lock 60. The cooling station 80 is used to naturally cool the substrate 3 through the atmosphere, and then move it into the tray unloading station 70 through the transportation mechanism, so as to avoid safety hazards caused by excessive temperature of the substrate 3.

[0058] In another embodiment disclosed by the present invention, a method for processing a substrate is provided. This method is based on the system disclosed in the above embodiment, referring to Figure 9 As shown, this method includes:

[0059] S901: Couple the substrate 3 to the mounting port.

[0060] In this step, it should be noted that if wet etching and texturing are used, the upper surface and the lower surface of the substrate need to be textured in advance, and then the processed substrate is coupled to the mounting port.

[0061] S902: Sequentially form a first I layer and an N-type ion layer on the upper surface of the substrate.

[0062] Before this step, the upper surface and the lower surface of the substrate are textured. If dry etching and texturing are used, before sequentially forming a first I layer and an N-type ion layer on the upper surface of the substrate, the substrate is pre-moved to the etching station for processing through a tray.

[0063] S903: The flipping station flips the sub-module frame, and sequentially forms a second I layer and a P-type ion layer on the lower surface of the substrate.

[0064] S904: Form a first conductive layer on the lower surface of the substrate, and the flipping station flips the sub-module frame to form a second conductive layer on the upper surface of the substrate.

[0065] In this step, first form a first conductive layer on the lower surface of the substrate, and then flip the sub-module frame through the flipping station to form a second conductive layer on the upper surface of the substrate.

[0066] S905: Form a first bus bar communicating with the lower surface of the first conductive layer and the thin film, and form a second bus bar communicating with the upper surface of the second conductive layer and the thin film.

[0067] S906: Form a first conducting wire on the first bus bar and a second conducting wire on the second bus bar.

[0068] In this step, specifically refer to Figures 10 to 11As shown, it should be noted that when producing a set of modules, a first conductive wire is formed on the first bus bar 103 and a second conductive wire is formed on the second bus bar 104. When producing more than two sets of modules, two or more films 1 are stacked in sequence. The film 1 has a first side and a second side that are oppositely arranged. The second side of the upper film 1 is laminated on the first side of the lower film 1, and a through hole is formed between the first bus bar 103 of the upper film 1 and the second bus bar 104 of the lower film 1. A first conductive wire is formed on the first bus bar 103 and a second conductive wire is formed on the second bus bar 104.

[0069] S907: A first polymer film and a first glass are sequentially arranged on the upper surface of the substrate, and a second polymer film and a second glass are sequentially arranged on the lower surface of the substrate.

[0070] In this step, refer to Figure 12 As shown, a first polymer film 1011 and a first glass 105 are sequentially arranged on the upper surface of the set of modules, and a second polymer film 1021 and a second glass 106 are sequentially arranged on the lower surface of the set of modules. Alternatively, a first polymer film 1011 and a first glass 105 are sequentially arranged on the upper surface of the two or more sets of modules, and a second polymer film 1021 and a second glass 106 are sequentially arranged on the lower surface of the two or more sets of modules.

[0071] It should be noted that the first conductive layer is a first indium tin oxide (ITO) layer doped with tin, and the second conductive layer is a second indium tin oxide (ITO) layer doped with tin. When forming modules of two or more sets, the upper film and the lower film are adhesively connected. This connection method is simple and does not affect the power generation surface.

[0072] As described above, it is only the specific implementation manner of the embodiments of the present application, but the protection scope of the embodiments of the present application is not limited thereto. Any change or replacement within the technical scope disclosed in the embodiments of the present application should be covered by the protection scope of the embodiments of the present application. Therefore, the protection scope of the embodiments of the present application should be subject to the protection scope of the claims.

Claims

1. A substrate processing system, characterized in that, Comprising: A sub-module frame with an opening, a tray, and a thin film; The sub-module frame is movably arranged on the tray; The thin film is coupled to the sub-module frame and covers the opening. The thin film is provided with a mounting opening, and the area of the mounting opening is less than or equal to the area of the opening. The mounting opening is used for coupling a substrate; Wherein, the area of the mounting opening is less than the area of the substrate. When the substrate is coupled to the thin film, the substrate covers the mounting opening; Also including a transfer track, a tray loading station, a preheating station, a processing station, a cooling station, and a tray unloading station; The tray loading station, the preheating station, the processing station, the cooling station, and the tray unloading station are arranged in sequence. The transfer track is used to sequentially move the tray with the substrate to the tray loading station, the preheating station, the processing station, the cooling station, and the tray unloading station; Wherein, the processing station includes several flipping stations, and the flipping stations are used to flip the sub-module frame in the vacuum chamber of the flipping station.

2. The system according to claim 1, wherein The processing station at least includes the PECVD station and the PVD station among the etching station, the plasma-enhanced chemical vapor deposition (PECVD) station, and the physical vapor deposition (PVD) station; The etching station is used for dry etching of the substrate; The PECVD station is used for PECVD deposition on the substrate; The PVD station is used for PVD deposition on the substrate; Wherein, flipping stations are provided in the etching station, the PECVD station, and the PVD station.

3. The system according to claim 1, wherein The thin film is provided with several mounting openings at intervals, and the several mounting openings are used for sequentially coupling and arranging the substrates; When the substrates are coupled and arranged through the several mounting openings, the distance between the upper surface of the substrate and the upper surface of the sub-module frame is equal to the distance between the lower surface of the substrate and the lower surface of the sub-module frame.

4. The system according to claim 1, wherein The tray further includes a radio frequency gasket and a purging device. The radio frequency gasket forms a grounding loop between the tray and the chamber body of the processing station, and the purging device is used to form an air wall to separate the substrate and the tray.

5. The system according to claim 1 or 2, characterized in that, The system further includes a load lock and an unload lock; The load lock is arranged between the tray loading station and the preheating station, and the load lock is used to transfer the substrate from the atmospheric environment to the vacuum environment in the system; The unload lock is arranged between the processing station and the cooling station, and the unload lock is used to transfer the substrate from the vacuum environment in the system to the atmospheric environment.

6. A method for processing a substrate, characterized in that, Based on the system according to any one of the above claims 1 to 5, the method includes: Coupling the substrate to the mounting opening; Sequentially forming a first I layer and an N-type ion layer on the upper surface of the substrate; The flipping station flips the sub-module frame, and sequentially forms a second I layer and a P-type ion layer on the lower surface of the substrate.

7. The method according to claim 6, characterized in that, Before sequentially forming the first I layer and the N-type ion layer on the upper surface of the substrate, it includes: Texturing the upper surface and the lower surface of the substrate.

8. The method according to claim 7, characterized in that, After the flipping station flips the sub-module frame and sequentially forms the second I layer and the P-type ion layer on the lower surface of the substrate, it includes: Forming a first conductive layer on the lower surface of the substrate. The flipping station flips the sub-module frame; A second conductive layer is formed on the upper surface of the substrate.

9. The method according to claim 8, wherein After forming the second conductive layer on the upper surface of the substrate, it further includes: A first bus bar that is connected is formed on the lower surface of the first conductive layer and the thin film, and a second bus bar that is connected is formed on the upper surface of the second conductive layer and the thin film.

10. The method according to claim 9, wherein When forming a set of modules, a first conductive wire is formed on the first bus bar, and a second conductive wire is formed on the second bus bar; Or, when forming more than two sets of modules, two or more of the thin films are stacked in sequence. The thin film has a first side and a second side that are oppositely arranged. The second side of the thin film located above is superposed on the first side of the thin film located below, and a through hole is formed between the first bus bar of the thin film located above and the second bus bar of the thin film located below. A first conductive wire is formed on the first bus bar, and a second conductive wire is formed on the second bus bar.

11. The method according to claim 10, wherein A first polymer film and a first glass are sequentially disposed on the upper surface of the set of modules, and a second polymer film and a second glass are sequentially disposed on the lower surface of the set of modules; Or, a first polymer film and a first glass are sequentially disposed on the upper surface of the two or more sets of modules, and a second polymer film and a second glass are sequentially disposed on the lower surface of the two or more sets of modules.

12. The method according to claim 11, wherein When forming the modules of the two or more sets of modules, the thin film located above is adhesively connected to the thin film located below.

13. The method according to claim 12, wherein, The first conductive layer is a first indium tin oxide (ITO) layer doped with tin, and the second conductive layer is a second indium tin oxide (ITO) layer doped with tin.

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