Load bearing device and semiconductor process chamber

Abstract

The application provides a bearing device, which comprises bearing layers and heat exchange layers stacked from top to bottom along the height direction, the bearing layers are used for bearing and heating wafers, the heat exchange layers are provided with heat exchange cavities, the bottom of each heat exchange cavity is provided with a plurality of liquid inlets and a plurality of liquid outlets, the plurality of liquid inlets are distributed in the circumferential direction of the central region of the heat exchange cavity, the plurality of liquid outlets are distributed in the circumferential direction of the edge region of the heat exchange cavity, and the heat exchange cavities of the heat exchange layers receive and discharge cooling liquid through the liquid inlets and the liquid outlets to cool the bearing layers. In the application, the heat exchange cavities receive cooling liquid through the liquid inlets in the central region and discharge the heat-exchanged cooling liquid through the liquid outlets in the edge region, so that the cooling liquid flows radially from the central region to the edge region in the heat exchange cavities, the circumferential temperature uniformity of the bearing device is improved, and the uniformity of the semiconductor process is improved. The application also provides a semiconductor process chamber.

Description

Technical Field

[0001] This invention relates to the field of semiconductor process equipment, and more specifically, to a carrier device and a semiconductor process chamber including the carrier device. Background Technology

[0002] An electrostatic chuck (ESC) is a device that uses electrostatic adsorption to hold a wafer in place, while simultaneously controlling the wafer surface temperature and providing it with radio frequency bias. Compared to mechanical chucks, ESCs reduce the probability of wafer breakage due to pressure, impact, or other factors, while also increasing the machinable area at the wafer edges and reducing the deposition of particles and byproducts on the wafer surface. Compared to vacuum chucks, ESCs can operate in high-vacuum environments. Due to these advantages, ESCs are widely used in integrated circuit (IC) manufacturing processes, particularly in processes such as plasma etching, physical vapor deposition (PVD), and chemical vapor deposition (CVD).

[0003] However, when controlling wafer temperature using existing electrostatic chucks, it is often impossible to guarantee the circumferential temperature uniformity of the wafer. This results in poor uniformity of semiconductor processes performed on the wafer surface, ultimately leading to poor film thickness uniformity and affecting product yield. Therefore, how to provide an electrostatic chuck structure that can improve the circumferential temperature uniformity of wafers has become a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0004] The present invention aims to provide a carrier device and a semiconductor process chamber, which can improve the circumferential temperature uniformity of wafers.

[0005] To achieve the above objectives, as one aspect of the present invention, a carrier device is provided for carrying a wafer in a semiconductor process chamber. The carrier device includes a carrier layer and a heat exchange layer stacked from top to bottom along the height direction. The carrier layer is used to carry and heat the wafer. The heat exchange layer has a heat exchange cavity. The bottom of the heat exchange cavity is provided with a plurality of liquid inlets and a plurality of liquid outlets. The plurality of liquid inlets are circumferentially distributed in the central region of the heat exchange cavity, and the plurality of liquid outlets are circumferentially distributed in the edge region of the heat exchange cavity. The heat exchange cavity of the heat exchange layer receives and discharges coolant through the liquid inlets and the liquid outlets to cool the carrier layer.

[0006] Optionally, the heat exchange layer includes a heat exchange plate and an isolation plate stacked together. A heat exchange groove is formed on the bottom surface of the heat exchange plate. The isolation plate closes the heat exchange groove to form the heat exchange cavity. A plurality of liquid inlets and a plurality of liquid outlets are formed on the isolation plate.

[0007] Optionally, multiple sets of heat exchange bosses are formed on the bottom surface of the heat exchange tank, with multiple heat exchange bosses in each set evenly distributed circumferentially, and the heat exchange bosses in different sets being radially staggered.

[0008] Optionally, the heat exchange boss has a circular, square, or streamlined cross-sectional shape.

[0009] Optionally, an annular groove is formed on the edge of the bottom surface of the heat exchange tank. The annular groove is arranged around the axis of the supporting device, and the positions of the plurality of liquid outlets correspond to the positions of the annular groove.

[0010] Optionally, the supporting device further includes a flow guide plate, which is stacked on the side of the heat exchange layer away from the supporting layer; an inlet groove and an outlet groove are formed on the top surface of the flow guide plate, and an inlet hole and an outlet hole are provided at the bottom of the flow guide plate. The inlet groove is used to connect the inlet hole with a plurality of inlets, and the outlet groove is used to connect the outlet hole with a plurality of outlets.

[0011] Optionally, the depth of the heat exchange chamber is 60%-80% of the depth of the liquid inlet tank, and the depth of the heat exchange chamber is not less than 5mm.

[0012] Optionally, a first radio frequency (RF) feed through-hole is formed in the guide plate, penetrating the guide plate along the thickness direction and coaxial with the support device. The liquid inlet groove includes a first connecting groove and an annular groove. The annular groove surrounds the first RF feed through-hole. The first connecting groove connects the liquid inlet and the annular groove. The positions of the plurality of liquid inlets correspond to the first connecting groove; and / or,

[0013] The liquid outlet channel includes a second connecting channel, an arc-shaped channel, and multiple liquid collection channels. The second connecting channel connects the liquid outlet and the arc-shaped channel. The arc-shaped channel is arranged around the outside of the annular channel. The second connecting channel is arranged around the first connecting channel, and the two ends of the arc-shaped channel are connected to the two ends of the second connecting channel one-to-one, so that the first connecting channel is located in the area defined by the arc-shaped channel and the second connecting channel. The multiple liquid collection channels are evenly distributed around the second connecting channel in the circumferential direction, and each liquid collection channel connects the second connecting channel to at least one of the liquid outlets.

[0014] Optionally, the collection tank includes a connecting portion extending radially and a diverting portion extending circumferentially, each diverting portion communicating with a plurality of adjacent outlets, and the connecting portion connecting the arcuate groove and the corresponding diverting portion.

[0015] Optionally, the bottom of the heat exchange layer has multiple sets of liquid outlets, each set of liquid outlets is connected to the same flow divider, and the multiple sets of liquid outlets are distributed circumferentially at equal intervals.

[0016] Optionally, the support layer includes an insulating layer and a heating layer, the heating layer being located between the heat exchange layer and the insulating layer, the insulating layer being used to support the wafer, and the heating layer being used to heat the insulating layer; the diameter of the heat exchange cavity is not less than the diameter of the insulating layer.

[0017] As a second aspect of the present invention, a semiconductor process chamber is provided, wherein a carrier device is provided in the semiconductor process chamber, and the carrier device is the carrier device described above.

[0018] In the carrier device and semiconductor process chamber provided by the present invention, a heat exchange layer is provided below the carrier layer of the carrier device. The heat exchange chamber receives coolant from the cold source through multiple liquid inlets distributed circumferentially in the central region, and exports the cooled coolant after heat exchange to the cold source through multiple liquid outlets located in the edge region. This allows the coolant to flow radially from the central region to the edge region in the heat exchange chamber, eliminating the problem of circumferential temperature non-uniformity caused by the coolant flowing along the circumferential path, improving the circumferential temperature uniformity of the carrier device, thereby improving the uniformity of the semiconductor process and ensuring product yield. Attached Figure Description

[0019] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used together with the following detailed description to explain the invention, but do not constitute a limitation thereof. In the drawings:

[0020] Figure 1 This is a schematic diagram of an existing electrostatic chuck.

[0021] Figure 2 yes Figure 1 Cross-sectional schematic diagram of an electrostatic chuck;

[0022] Figure 3 yes Figure 1 Schematic diagram of the heating layer in the electrostatic chuck;

[0023] Figure 4 This is a schematic diagram of the structure of the bearing device provided in an embodiment of the present invention;

[0024] Figure 5 This is a schematic diagram of the top surface structure of the guide plate in the bearing device provided in an embodiment of the present invention;

[0025] Figure 6 This is a schematic diagram of the structure of the isolation plate in the bearing device provided in the embodiment of the present invention;

[0026] Figure 7 This is a schematic diagram of the bottom structure of the heat exchange plate in the support device provided in the embodiment of the present invention;

[0027] Figure 8 yes Figure 7 A sectional view of the heat exchanger plate along the AA direction. Detailed Implementation

[0028] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0029] like Figure 1 The diagram illustrates a typical electrostatic chuck structure in the prior art. The electrostatic chuck includes a metal base 100, a heating layer 200, and a dielectric layer 300. The dielectric layer 300 is typically made of ceramic and has embedded DC electrodes 310. When energized, these electrodes apply electrostatic attraction to a wafer (not shown) placed above the dielectric layer 300, thereby fixing the wafer's position. The heating layer 200 is located below the dielectric layer 300 and is used to heat the wafer on the dielectric layer 300. The metal base 100 supports and protects the heating layer 200 and the dielectric layer 300 mounted thereon. The metal base 100 includes a cooling substrate 110, which has coolant channels 111 for circulating coolant to cool the electrostatic chuck and the wafer it carries.

[0030] For most electrostatic chucks, radio frequency needs to be fed in from the center hole of the metal base 100. Therefore, the coolant inside the cooling substrate 110 can only flow in or out from the edge. Figure 2 For cooling substrate 110 along Figure 1 A schematic diagram of the cross-section after cutting along the section corresponding to the dashed line AA. (See diagram below.) Figure 2 As shown by the dashed arrow, the coolant flows in from the edge of the cooling substrate, then flows through the spiral coolant channel 111 with a gradually decreasing diameter to the center of the electrostatic chuck, and then flows back to the edge in the opposite way, and flows out of the cooling substrate 110 from the edge and back into the heat exchanger.

[0031] In actual use, the temperature of the coolant is much lower than that of the dielectric layer 300. The temperature is lowest when it enters the cooling substrate 110, and the temperature difference between it and the dielectric layer 300 is the largest. Therefore, the coolant heats up the fastest when it flows through the outer ring. At the same time, the outermost coolant channel is longer than the inner ring channel, which causes the circumferential temperature difference of the coolant flowing through the outer ring to be significantly greater than that of the coolant flowing through the inner ring.

[0032] In some electrostatic chucks, the heating layer 200 has a zoned heating function, for example, Figure 3 As shown, the heating layer 200 has four independent heating regions: heating region 210, heating region 220, heating region 230, and heating region 240. Each region can adjust its temperature relatively independently, thereby adjusting the temperature of different regions to improve the radial temperature uniformity of the electrostatic chuck dielectric layer 300. However, for the same annular region, the heating power density is almost the same everywhere within the region, which cannot balance the circumferential temperature difference generated in the cooling substrate 110.

[0033] Therefore, existing electrostatic chucks often suffer from poor temperature uniformity in the outer peripheral area, which fails to meet the requirements of semiconductor processes.

[0034] To address the aforementioned technical problems, as one aspect of the present invention, a support device is provided for supporting wafers in a semiconductor process chamber. The support device includes a support layer and a heat exchange layer (including a heat exchange plate 4110 and an isolation plate 4120) stacked from top to bottom along the height direction. The support layer supports and heats the wafer. The heat exchange layer has a heat exchange cavity, and the bottom of the heat exchange cavity is provided with multiple liquid inlets 4121 and multiple liquid outlets 4122. The multiple liquid inlets 4121 are circumferentially distributed in the central region of the heat exchange cavity, and the multiple liquid outlets 4122 are circumferentially distributed in the edge region of the heat exchange cavity (the edge region surrounds the central region). The heat exchange cavity of the heat exchange layer receives and discharges coolant through the liquid inlets 4121 and liquid outlets 4122 to cool the support layer.

[0035] In this invention, a heat exchange layer is provided below the support layer of the support device. The heat exchange cavity receives coolant from the cold source (heat exchanger) through multiple liquid inlets 4121 distributed circumferentially in the central region, and exports the cooled coolant to the cold source through multiple liquid outlets 4122 located in the edge region. This allows the coolant to flow radially from the central region to the edge region in the heat exchange cavity, eliminating the problem of circumferential temperature non-uniformity caused by the coolant flowing along the circumferential path (the coolant flows radially and absorbs heat from the support layer, wafer (and heating layer), resulting only in radial temperature differences, i.e., the inner ring temperature is lower and the outer ring temperature is higher, and this radial temperature difference can be balanced by adjusting the power of each annular heating area of ​​the heater). This improves the circumferential temperature uniformity of the support device, thereby improving the uniformity of the semiconductor process and ensuring product yield.

[0036] As an optional embodiment of the present invention, the carrier device can be an electrostatic chuck. Specifically, the carrier layer can be made of ceramic material and has embedded DC electrodes for adsorbing and fixing the wafer above it after the DC electrodes are energized. The carrier layer can include an insulating layer and a heating layer. The heating layer is located between the heat exchange layer and the insulating layer. The insulating layer supports the wafer, and the heating layer heats the insulating layer. The heat exchange layer (including the heat exchange plate 4110 and the isolation plate 4120) is equivalent to the cooling substrate in the metal base of the electrostatic chuck. The heating layer and the cooling substrate together regulate the temperature of the insulating layer and the wafer carried on it. Preferably, the diameter of the heat exchange cavity is not less than the diameter of the insulating layer to ensure that the heat exchange layer can cool the entire area where the wafer is located.

[0037] The embodiments of the present invention do not specifically limit how the liquid inlet 4121 and liquid outlet 4122 of the heat exchange layer are connected to the cold source. For example, the cold source can be directly connected to the support layer of the support layer through a pipeline. That is, the output end of the cold source is connected to the liquid inlet 4121 of the heat exchange layer through the liquid inlet pipe, and the liquid outlet 4122 of the heat exchange layer is connected to the input end of the cold source through the liquid outlet pipe. Alternatively, in order to improve the compactness and circumferential uniformity of the support device structure, the support device may also include a disc-shaped flow guide stacked below the heat exchange layer. The interior of the disc-shaped flow guide has a channel structure with the same function as the pipeline mentioned above. The liquid inlet 4121 and liquid outlet 4122 of the heat exchange layer are connected to the opening of the channel structure at the top of the disc-shaped flow guide and are respectively connected to the output end and input end of the cold source through the channel structure.

[0038] In order to reduce the overall thickness of the cooling substrate 4100 and improve its maintainability while ensuring the compactness and circumferential uniformity of the supporting device structure, as a preferred embodiment of the present invention, such as Figure 4 , Figure 5 As shown, the supporting device also includes a guide plate 4130, which is stacked on the side of the heat exchange layer away from the supporting layer, and together with the heat exchange layer (including the heat exchange plate 4110 and the isolation plate 4120), forms the cooling base plate 4100 in the metal base 4000 of the electrostatic chuck. A liquid inlet groove 4131 and a liquid outlet groove 4132 are formed on the top surface of the guide plate 4130, and a liquid inlet hole 4150 and a liquid outlet hole 4160 are provided at the bottom of the guide plate. The liquid inlet groove 4131 is used to connect the liquid inlet hole 4150 with multiple liquid inlets 4121, and the liquid outlet groove 4132 is used to connect the liquid outlet hole 4160 with multiple liquid outlets 4122.

[0039] In this embodiment of the invention, the bottom surface of the heat exchange layer (i.e., the bottom surface of the isolation plate 4120) contacts the top surface of the guide plate 4130 and seals the top of the liquid inlet 4131 and the liquid outlet 4132, thereby forming a guide channel connecting the liquid inlet hole 4150 and the multiple liquid inlets 4121 and the liquid outlet hole 4160 and the multiple liquid outlets 4122. Compared with forming a separate sealed guide channel inside the disc-shaped guide component below the heat exchange layer, this saves the material thickness between the top of the guide channel and the top surface of the guide plate 4130, thereby reducing the overall thickness of the cooling substrate 4100. Furthermore, during equipment maintenance, the guide channel can be disassembled simply by separating the guide plate 4130 from the heat exchange layer, improving the convenience of cleaning or repairing the interior of the guide channel and thus improving the maintainability of the cooling substrate 4100.

[0040] To improve the circumferential uniformity of coolant flow rate when flowing radially along various angles in the cooling chamber, as a preferred embodiment of the present invention, such as... Figure 4 , Figure 5 As shown, a first radio frequency (RF) feed through-hole is formed in the guide plate 4130, extending through the guide plate 4130 along the thickness direction and coaxial with the support device. The liquid inlet groove 4131 includes a first connecting groove and an annular groove. The annular groove surrounds the first RF feed through-hole. The first connecting groove connects the liquid inlet hole 4150 and the annular groove. The positions of the plurality of liquid inlets 4121 correspond to the first connecting groove; and / or,

[0041] The liquid outlet 4132 includes a second connecting groove, an arc groove, and multiple liquid collection grooves. The second connecting groove connects the liquid outlet 4160 and the arc groove. The arc groove is arranged around the outside of the annular groove. The second connecting groove is arranged around the first connecting groove, and the two ends of the arc groove are connected to the two ends of the second connecting groove one by one, so that the first connecting groove is located in the area defined by the arc groove and the second connecting groove. The multiple liquid collection grooves are evenly distributed around the second connecting groove in the circumferential direction. Each liquid collection groove connects the second connecting groove to at least one liquid outlet 4122.

[0042] In this embodiment of the invention, the liquid inlet tank 4131 includes a first connecting groove and an annular groove surrounding the first radio frequency feed through hole. The annular groove is connected to multiple liquid inlets 4121, thereby reducing the length difference of the fluid path between the liquid inlets 4121 and the liquid inlet hole 4150 located at different angles. Similarly, the liquid outlet tank 4132 includes a second connecting groove, an arc groove, and multiple liquid collection grooves. The arc grooves are concentrically arranged outside the annular groove and have a radius close to that of the annular groove. The liquid outlets 4122 located at different angles are all connected to the arc grooves through liquid collection grooves with the same radial length, thereby reducing the length difference of the fluid path between the liquid outlets 4122 and the liquid outlet hole 4160 located at different angles.

[0043] That is, the difference in path length between each liquid inlet 4121 and the liquid inlet hole 4150 through the liquid inlet groove 4131 and the difference in path length between each liquid outlet 4122 and the liquid outlet hole 4160 through the liquid outlet groove 4132 is reduced, thereby reducing the difference in the total path length of the coolant flowing radially at each angle in the cooling chamber from the liquid inlet hole 4150 to the liquid outlet hole 4160, and thus improving the circumferential uniformity of the flow rate of the coolant when it flows radially at each angle in the cooling chamber.

[0044] As an optional embodiment of the present invention, such as Figure 5 As shown, the liquid collection tank includes a connecting part extending radially and a diversion part extending circumferentially. Each diversion part is connected to multiple (e.g., two) adjacent liquid outlets 4122. The connecting part is connected between the arcuate groove and the corresponding diversion part.

[0045] To reduce the number of liquid collection tanks and simplify the heat exchange layer structure, as a preferred embodiment of the present invention, such as... Figure 5 As shown, the bottom of the heat exchange layer has multiple sets of liquid outlets 4122, each set of liquid outlets 4122 is connected to the same flow branch, and the multiple sets of liquid outlets 4122 are distributed circumferentially at equal intervals. For example, as Figure 5 As shown, every two liquid outlets 4122 are arranged close to each other and connected to the connection part of the same liquid collection tank, thereby reducing the number of liquid collection tanks required while ensuring the uniformity of the circumferential flow field of the cooling chamber.

[0046] To improve the maintainability of the heat exchange layer, as a preferred embodiment of the present invention, such as... Figure 4 , Figure 6 , Figure 7 , Figure 8 As shown, the heat exchange layer includes a heat exchange plate 4110 and an isolation plate 4120 stacked together. A heat exchange groove is formed on the bottom surface of the heat exchange plate 4110. The isolation plate 4120 closes the heat exchange groove to form a heat exchange cavity. Multiple liquid inlets 4121 and multiple liquid outlets 4122 are formed on the isolation plate 4120.

[0047] In this embodiment of the invention, the heat exchange cavity is obtained by sealing the heat exchange groove on the bottom surface of the heat exchange plate 4110 with an isolation plate 4120. During equipment maintenance, the heat exchange cavity can be opened simply by removing the isolation plate 4120 from the bottom of the heat exchange plate 4110, which improves the convenience of cleaning or repairing the inside of the heat exchange cavity and thus improves the maintenance performance of the heat exchange layer.

[0048] In a preferred embodiment of the present invention, the diameter of the heat exchange tank (i.e., the diameter of the heat exchange cavity) is slightly larger than the diameter of the support layer (i.e., the dielectric layer), so that the entire support layer can be cooled. For example, the diameter of the heat exchange tank can be 300 mm.

[0049] As a preferred embodiment of the present invention, such as Figure 7 , Figure 8 As shown, multiple sets of heat exchange protrusions are formed on the bottom surface of the heat exchange tank. Multiple protrusions in each set are evenly distributed circumferentially, and the protrusions in different sets are radially staggered. In this embodiment of the invention, the circumferentially evenly distributed heat exchange protrusions on the bottom surface of the heat exchange tank can, on the one hand, change the flow path of the coolant in the cooling chamber, improving the circumferential uniformity of the coolant flow rate; on the other hand, the sidewalls of the heat exchange protrusions contact and exchange heat with the coolant, effectively increasing the contact area between the heat exchange plate 4110 and the coolant, thereby improving the heat exchange efficiency of the support device and thus improving the efficiency of the support device in regulating the wafer temperature.

[0050] The embodiments of the present invention do not specifically limit the cross-sectional shape of the heat exchange boss. For example, the cross-sectional shape of the heat exchange boss can be circular, square, streamlined or other shapes.

[0051] In this embodiment of the invention, the depth variation trend at different positions of the heat exchange tank is not specifically limited, as long as the depths at positions with the same distance from the axis of the supporting device are equal, so as to ensure circumferential temperature uniformity.

[0052] To improve the radial uniformity of the cooling capacity of the coolant in the heat exchange cavity for the support layer and the wafer it supports, as a preferred embodiment of the present invention, such as... Figure 4 , Figure 7 , Figure 8 As shown, an annular groove is also formed on the bottom surface of the heat exchange tank. The annular groove is arranged around the axis of the bearing device, and the positions of multiple liquid outlets 4122 correspond to the positions of the annular groove.

[0053] More preferably, the outer diameter of the annular groove is the same as the outer diameter of the heat exchange tank (i.e., the outer wall of the annular groove is in contact with the side wall of the heat exchange tank). As the coolant flows from the central region to the edge region of the cooling chamber, the temperature of the coolant also increases, making the coolant temperature in the edge region of the cooling chamber higher than that in the central region. Consequently, the heat exchange efficiency of the coolant in the edge region of the cooling chamber is also lower. However, in this embodiment of the invention, an annular groove is formed on the bottom edge of the heat exchange tank, thereby increasing the contact area between the coolant in the edge region and the heat exchange plate 4110, improving the heat exchange efficiency in the edge region, and thus improving the radial temperature uniformity of the supporting device.

[0054] In a preferred embodiment of the present invention, the depth of the heat exchange tank is preferably 60%-80% of the depth of the liquid inlet tank 4131 on the guide plate 4130, and not less than 5mm, so as to avoid excessive flow resistance affecting the flow of coolant. The depth of the heat exchange tank can vary radially, but the total variation in the depth of the heat exchange tank should not exceed 2mm.

[0055] As an optional embodiment of the present invention, such as Figures 6 to 8As shown, a second RF feed through-hole is formed in the heat exchange plate 4110, penetrating the heat exchange plate 4110 along the thickness direction and coaxial with the heat exchange plate 4110. A third RF feed through-hole 4140 is formed in the isolation plate 4120, penetrating the isolation plate 4120 along the thickness direction and coaxial with the isolation plate 4120. The heat exchange groove is annular in shape and is arranged around the second RF feed through-hole. The apertures of the first RF feed through-hole, the second RF feed through-hole, and the third RF feed through-hole 4140 are preferably the same. That is, in this embodiment of the invention, a through-hole penetrating the cooling substrate 4100 is formed in the center of the cooling substrate 4100 to facilitate the feeding of RF signals.

[0056] As an optional embodiment of the present invention, such as Figures 4 to 8 As shown, the support device has multiple (usually three) ejector pin holes that penetrate the support device along the thickness direction, for the ejector pin (three-pin) structure to pass through and lift the wafer upwards. The heat exchange plate 4110, the isolation plate 4120 and the flow guide plate 4130 also have through holes at corresponding positions as part of the ejector pin holes.

[0057] like Figure 4 , Figure 7 As shown, the top surface of the heat exchange boss contacts the isolation plate 4120, and multiple ejector pin holes pass through the corresponding heat exchange bosses. That is, heat exchange bosses are provided at the positions of multiple ejector pin holes, and the contact relationship between the top surface of the heat exchange boss and the isolation plate 4120 achieves the sealing of the cooling chamber, preventing the coolant in the cooling chamber from leaking out through the ejector pin holes.

[0058] As an optional embodiment of the present invention, such as Figure 4 , Figure 5 As shown, the inlet hole 4150 and the outlet hole 4160 are located in the same diameter direction of the support device as one of the ejector pin holes, and the first connecting groove has a curved section at the corresponding ejector pin hole position to avoid the ejector pin hole.

[0059] As a second aspect of the present invention, a semiconductor process chamber is provided, wherein a carrier device is provided in the semiconductor process chamber, and the carrier device is the carrier device provided in the embodiments of the present invention.

[0060] In the semiconductor process chamber provided by the present invention, a heat exchange layer is provided below the support layer of the support device. The heat exchange chamber receives coolant from the cold source (heat exchanger) through multiple liquid inlets 4121 distributed circumferentially in the central region, and exports the cooled coolant after heat exchange to the cold source through multiple liquid outlets 4122 located in the edge region. This allows the coolant to flow radially from the central region to the edge region in the heat exchange chamber, eliminating the problem of circumferential temperature non-uniformity caused by the coolant flowing along the circumferential path, improving the circumferential temperature uniformity of the support device, thereby improving the uniformity of the semiconductor process and ensuring product yield.

[0061] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A carrier device for carrying a wafer in a semiconductor process chamber, characterized in that, The support device includes a support layer and a heat exchange layer stacked from top to bottom along the height direction. The support layer is used to support and heat the wafer. The heat exchange layer has a heat exchange cavity. The bottom of the heat exchange cavity is provided with multiple liquid inlets and multiple liquid outlets. The multiple liquid inlets are circumferentially distributed in the central region of the heat exchange cavity, and the multiple liquid outlets are circumferentially distributed in the edge region of the heat exchange cavity. The heat exchange cavity of the heat exchange layer receives and discharges coolant through the liquid inlets and liquid outlets to cool the support layer. The supporting device further includes a flow guide plate, which is stacked on the side of the heat exchange layer away from the supporting layer; an inlet groove and an outlet groove are formed on the top surface of the flow guide plate, and an inlet hole and an outlet hole are provided at the bottom of the flow guide plate. The inlet groove is used to connect the inlet hole with a plurality of inlet ports, and the outlet groove is used to connect the outlet hole with a plurality of outlet ports.

2. The bearing device according to claim 1, characterized in that, The heat exchange layer includes a heat exchange plate and an isolation plate stacked together. A heat exchange groove is formed on the bottom surface of the heat exchange plate. The isolation plate closes the heat exchange groove to form the heat exchange cavity. A plurality of liquid inlets and a plurality of liquid outlets are formed on the isolation plate.

3. The bearing device according to claim 2, characterized in that, Multiple sets of heat exchange protrusions are formed on the bottom surface of the heat exchange tank. The multiple heat exchange protrusions in each set are evenly distributed circumferentially, and the heat exchange protrusions in different sets are staggered radially.

4. The bearing device according to claim 3, characterized in that, The heat exchange boss has a circular, square, or streamlined cross-sectional shape.

5. The bearing device according to claim 2, characterized in that, An annular groove is formed on the edge of the bottom surface of the heat exchange tank. The annular groove is arranged around the axis of the supporting device, and the positions of the plurality of liquid outlets correspond to the positions of the annular groove.

6. The bearing device according to claim 1, characterized in that, The depth of the heat exchange chamber is 60%-80% of the depth of the liquid inlet tank, and the depth of the heat exchange chamber is not less than 5mm.

7. The bearing device according to claim 1, characterized in that, The flow guide plate has a first radio frequency feed through hole that extends through the flow guide plate along the thickness direction and is coaxial with the support device. The liquid inlet groove includes a first connecting groove and an annular groove. The annular groove is arranged around the first radio frequency feed through hole. The first connecting groove is connected between the liquid inlet hole and the annular groove. The positions of the plurality of liquid inlets correspond to the first connecting groove. And / or, The liquid outlet groove includes a second connecting groove, an arc groove, and multiple liquid collection grooves. The second connecting groove is connected between the liquid outlet hole and the arc groove. The arc groove is arranged around the outside of the annular groove. The second connecting groove is arranged around the first connecting groove, and the two ends of the arc groove are connected to the two ends of the second connecting groove one by one, so that the first connecting groove is located in the area defined by the arc groove and the second connecting groove. Multiple liquid collection channels are distributed at equal intervals around the second connecting channel in the circumferential direction, and each liquid collection channel connects the second connecting channel to at least one of the liquid outlets.

8. The bearing device according to claim 7, characterized in that, The collection tank includes a connecting portion extending radially and a diversion portion extending circumferentially. Each diversion portion communicates with a plurality of adjacent outlets. The connecting portion connects the arcuate groove and the corresponding diversion portion.

9. The bearing device according to claim 8, characterized in that, The bottom of the heat exchange layer has multiple sets of liquid outlets, each set of liquid outlets is connected to the same flow divider, and the multiple sets of liquid outlets are distributed circumferentially at equal intervals.

10. The bearing device according to any one of claims 1-9, characterized in that, The support layer includes an insulating layer and a heating layer. The heating layer is located between the heat exchange layer and the insulating layer. The insulating layer is used to support the wafer, and the heating layer is used to heat the insulating layer. The diameter of the heat exchange cavity is not less than the diameter of the insulating layer.

11. A semiconductor process chamber, wherein a carrier device is disposed therein, characterized in that, The supporting device is the supporting device according to any one of claims 1 to 10.

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