Terahertz device

Abstract

A terahertz device includes a substrate, a terahertz element, an antenna base, and a reflecting film. The terahertz element is mounted on the substrate to generate electromagnetic waves. The antenna base is disposed at a position opposite to the substrate and has an antenna surface. The reflecting film is formed on the antenna surface to reflect at least a portion of the electromagnetic waves generated from the terahertz element in one direction.

Description

TECHNICAL FIELD

[0001] The present application relates to a terahertz device. BACKGROUND

[0002] In recent years, the miniaturization of electronic devices such as transistors is progressing, and the size of electronic devices is becoming nanoscale, and thus a phenomenon called quantum effect is observed. And development aimed at realization of ultra-high-speed devices or new functional devices using this quantum effect is advancing.

[0003] In such an environment, in particular, attempts are being made to perform large-capacity communication or information processing, or imaging or measurement, or the like using a frequency band called a terahertz band having a frequency of 0.1 THz to 10 THz. This frequency band has characteristics of both light and electric waves, and if a device that operates in this frequency band can be realized, it can be utilized in more uses such as measurement in various fields of physical properties, astronomy, biology, and the like, in addition to the above-mentioned imaging, large-capacity communication and information processing.

[0004] As a high-frequency electromagnetic wave element that oscillates a frequency of the terahertz band, an element in which an integrated resonant tunneling diode and a structure of a slot antenna are integrated is known (for example, refer to Patent Literature 1).

[0005] PRIOR ART DOCUMENTS

[0006] PATENT LITERATURE

[0007] Patent Literature 1: Japanese Patent Application Laid-Open No. 2016-111542 SUMMARY

[0008] PROBLEMS TO BE SOLVED BY THE INVENTION

[0009] In a terahertz device having the above-described terahertz element, there are cases where improvement of gain is required.

[0010] An object of the present application is to provide a terahertz device capable of achieving improvement of gain.

[0011] TECHNICAL SOLUTION FOR SOLVING THE PROBLEMS

[0012] A terahertz device for solving the above-described problems includes: a substrate; a terahertz element that generates an electromagnetic wave, mounted on the substrate; an antenna base having an antenna surface, provided at a position opposite to the substrate; and a reflection film formed on the antenna surface, which reflects at least a part of the electromagnetic wave generated from the terahertz element in one direction. According to this structure, the electromagnetic wave generated from the terahertz element is reflected in one direction by the reflection film. Thereby, it is possible to increase the output of the electromagnetic wave irradiated from the terahertz device. Therefore, it is possible to achieve improvement of gain of the terahertz device.

[0013] A terahertz device that solves the above-described problem includes: a terahertz element that generates electromagnetic waves; a substrate that opposes the terahertz element and has a reflection portion that reflects at least a portion of the electromagnetic waves generated from the terahertz element; an antenna base that has an antenna surface and is disposed at a position that opposes the substrate; and a reflection film that is formed on the antenna surface and reflects at least a portion of the electromagnetic waves reflected by the reflection portion in one direction. According to this structure, the electromagnetic waves generated from the terahertz element are reflected by the reflection portion and further reflected in one direction by the reflection film. Thus, the output of the electromagnetic waves emitted from the terahertz device can be increased. Therefore, an increase in the gain of the terahertz device can be achieved.

[0014] A terahertz device that solves the above-described problem includes: a substrate; a terahertz element that receives electromagnetic waves and is mounted to the substrate; an antenna base that has an antenna surface and is disposed at a position that opposes the substrate; and a reflection film that is formed on the antenna surface and reflects incident electromagnetic waves toward the terahertz element. According to this structure, the electromagnetic waves incident on the reflection film are reflected toward the terahertz element by the reflection film. Thus, the reception intensity of the terahertz device can be increased. Therefore, an increase in the gain of the terahertz device can be achieved.

[0015] A terahertz device that solves the above-described problem includes: a terahertz element that receives electromagnetic waves; a substrate that has a reflection portion that reflects at least a portion of incident electromagnetic waves toward the terahertz element and is disposed at a position that opposes the terahertz element; an antenna base that has an antenna surface and is disposed at a position that opposes the substrate; and a reflection film that is formed on the antenna surface and reflects at least a portion of the incident electromagnetic waves toward the reflection portion. According to this structure, the electromagnetic waves incident on the reflection film are reflected toward the reflection portion and further reflected toward the terahertz element by the reflection portion. Thus, the reception intensity of the terahertz device can be increased. Therefore, an increase in the gain of the terahertz device can be achieved.

[0016] A terahertz device that solves the above-described problem includes: a substrate; a terahertz element that generates electromagnetic waves and is mounted to the substrate; an antenna base that has an antenna surface and is disposed at a position that opposes the substrate; a reflection film that is formed on the antenna surface and reflects at least a portion of the electromagnetic waves generated from the terahertz element in one direction; and an electrode for electrical connection with the outside, the electrode protruding laterally with respect to the antenna base as viewed from the direction in which the substrate opposes the antenna base.

[0017] According to this structure, the electromagnetic waves generated from the terahertz element are reflected in one direction by the reflection film. Thus, the output of the electromagnetic waves emitted from the terahertz device can be increased. Therefore, an increase in the gain of the terahertz device can be achieved.

[0018] In addition, since the electrode protrudes laterally with respect to the antenna base, the terahertz device can be mounted to the circuit board with the antenna base inserted into a hole provided in the circuit board. Thus, low height when the terahertz device is mounted to the circuit board can be achieved.

[0019] A terahertz device that solves the above problem includes: a substrate; a terahertz element mounted to the substrate and receiving an electromagnetic wave; an antenna base provided at a position opposite the substrate and having an antenna surface; a reflection film formed on the antenna surface and reflecting an incident electromagnetic wave toward the terahertz element; and an electrode for electrical connection with the outside, the electrode protruding laterally with respect to the antenna base as viewed from a direction in which the substrate faces the antenna base.

[0020] According to this structure, an electromagnetic wave incident on the reflection film is reflected by the reflection film toward the terahertz element. Thus, the reception strength of the terahertz device can be improved. Therefore, improvement of the gain of the terahertz device can be achieved.

[0021] In addition, since the electrode protrudes laterally with respect to the antenna base, the terahertz device can be mounted to the circuit board with the antenna base inserted into a hole provided in the circuit board. Thus, low height when the terahertz device is mounted to the circuit board can be achieved.

[0022] Effects of Invention

[0023] According to the above terahertz device, improvement of the gain can be achieved. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 is a perspective view of the terahertz device of the first embodiment as viewed from above.

[0025] Figure 2 is a perspective view of the terahertz device as viewed from below.

[0026] Figure 3 is a top view of the terahertz device.

[0027] Figure 4 is a 4-4 line end view of Figure 3

[0028] Figure 5 is a front view of the terahertz element and the lead frame.

[0029] Figure 6 is an end view schematically showing the active element and its periphery.

[0030] Figure 7 is an end view showing the cross-sectional structure of the active element in an enlarged manner.

[0031] ​Figure 8 is an end surface view showing one step of a manufacturing method of a terahertz device of the first embodiment.

[0032] Figure 9 is an end surface view showing one step of a manufacturing method of a terahertz device.

[0033] Figure 10 is an end surface view showing one step of a manufacturing method of a terahertz device.

[0034] Figure 11 is an end surface view showing one step of a manufacturing method of a terahertz device.

[0035] Figure 12 is an end surface view showing one step of a manufacturing method of a terahertz device.

[0036] Figure 13 is an end surface view showing one step of a manufacturing method of a terahertz device.

[0037] Figure 14 is an end surface view showing one step of a manufacturing method of a terahertz device.

[0038] Figure 15 is an end surface view showing one step of a manufacturing method of a terahertz device.

[0039] Figure 16 is an end surface view showing one step of a manufacturing method of a terahertz device.

[0040] Figure 17 is an end surface view showing one step of a manufacturing method of a terahertz device.

[0041] Figure 18 is a plan view showing one step of a manufacturing method of a terahertz device.

[0042] Figure 19 is a plan view showing one step of a manufacturing method of a terahertz device.

[0043] Figure 20 is an end surface view showing a modification of a terahertz device of the first embodiment.

[0044] Figure 21 is a circuit diagram showing an outline of a terahertz device of the second embodiment.

[0045] Figure 22 is a front view of a terahertz element and a lead frame of the second embodiment.

[0046] Figure 23 is an end surface view of a line 23-23 in Figure 22

[0047] ​Figure 24 is a plan view schematically showing the terahertz device of the modification example.

[0048] Figure 25 is a plan view showing the connecting portion of the modification example.

[0049] Figure 26 is a plan view showing the connecting portion of the modification example.

[0050] Figure 27 is a plan view showing the lead frame of the modification example.

[0051] Figure 28 is a 28-28 line end view of Figure 27

[0052] Figure 29 is a plan view schematically showing the terahertz device of the modification example.

[0053] Figure 30 is a plan view schematically showing the terahertz device of the modification example.

[0054] Figure 31 is a plan view schematically showing the terahertz device of the modification example.

[0055] Figure 32 is a plan view showing the lead frame of the modification example.

[0056] Figure 33 is a plan view schematically showing the terahertz device of the modification example.

[0057] Figure 34 is a plan view schematically showing the terahertz device of the modification example.

[0058] Figure 35 is a plan view schematically showing the terahertz device of the modification example.

[0059] Figure 36 is a plan view schematically showing the terahertz device of the modification example.

[0060] Figure 37 is a plan view schematically showing the terahertz device of the modification example.

[0061] Figure 38 is a plan view schematically showing the terahertz device of the modification example.

[0062] Figure 39 is a perspective view of the terahertz device of the third embodiment as viewed from above.

[0063] Figure 40 is a perspective view of the terahertz device as viewed from below.

[0064] ​Figure 41 is a top view of the terahertz device.

[0065] Figure 42 is a 4-4 line end view of Figure 41

[0066] Figure 43 is a front view of the terahertz element and the lead frame.

[0067] Figure 44 is an end view schematically showing the active element and its periphery.

[0068] Figure 45 is an end view showing a cross-sectional configuration of the active element in an enlarged manner.

[0069] Figure 46 is an end view showing one step of the manufacturing method of the terahertz device of the third embodiment.

[0070] Figure 47 is an end view showing one step of the manufacturing method of the terahertz device.

[0071] Figure 48 is an end view showing one step of the manufacturing method of the terahertz device.

[0072] Figure 49 is an end view showing one step of the manufacturing method of the terahertz device.

[0073] Figure 50 is an end view showing one step of the manufacturing method of the terahertz device.

[0074] Figure 51 is an end view showing one step of the manufacturing method of the terahertz device.

[0075] Figure 52 is an end view showing one step of the manufacturing method of the terahertz device.

[0076] Figure 53 is an end view showing one step of the manufacturing method of the terahertz device.

[0077] Figure 54 is a plan view showing one step of the manufacturing method of the terahertz device.

[0078] Figure 55 is a plan view showing one step of the manufacturing method of the terahertz device.

[0079] Figure 56 is an end view showing an example of the mounting form of the terahertz device to the circuit substrate.

[0080] Figure 57 ​is an end surface view of a modification of the terahertz device of the third embodiment.

[0081] Figure 58 is a circuit diagram showing an outline of the terahertz device of the fourth embodiment.

[0082] Figure 59 is a front view of the terahertz element and the lead frame of the fourth embodiment.

[0083] Figure 60 is Figure 59 a 22-22 line end surface view.

[0084] Figure 61 is an end surface view of the terahertz device of the fifth embodiment.

[0085] Figure 62 is an end surface view of one process of the terahertz device of the fifth embodiment.

[0086] Figure 63 is an end surface view of a modification of the terahertz device of the fifth embodiment.

[0087] Figure 64 is an end surface view of the terahertz device of the sixth embodiment.

[0088] Figure 65 is an end surface view of a modification of the terahertz device of the sixth embodiment.

[0089] Figure 66 is an end surface view of a modification of the terahertz device of the sixth embodiment.

[0090] Figure 67 is an end surface view of a modification of the terahertz device of the seventh embodiment.

[0091] Figure 68 is an end surface view of the terahertz device of the modification.

[0092] Figure 69 is a front view of the connection portion of the modification.

[0093] Figure 70 is a front view of the connection portion of the modification.

[0094] Figure 71 is a front view of the lead frame of the modification.

[0095] Figure 72 is Figure 71 a 34-34 line end surface view.

[0096] Figure 73 is an end surface view of the terahertz device of the modification.

[0097] Figure 74 is a plan view schematically showing a terahertz device of a modification example.

[0098] Figure 75 is a plan view schematically showing a terahertz device of a modification example.

[0099] Figure 76 is a front view of a lead frame showing a modification example.

[0100] Figure 77 is a plan view schematically showing a terahertz device of a modification example.

[0101] Figure 78 is a plan view schematically showing a terahertz device of a modification example.

[0102] Figure 79 is a plan view schematically showing a terahertz device of a modification example.

[0103] Figure 80 is a plan view schematically showing a terahertz device of a modification example.

[0104] Figure 81 is a plan view schematically showing a terahertz device of a modification example.

[0105] Figure 82 is a plan view schematically showing a terahertz device of a modification example.

[0106] Figure 83 is a plan view schematically showing a terahertz device of a modification example.

[0107] Figure 84 is a plan view schematically showing a terahertz device of a modification example.

[0108] Figure 85 is a plan view schematically showing a terahertz device of a modification example.

[0109] Explanation of Reference Numerals

[0110] 10 terahertz device

[0111] 11 mounting plate (substrate)

[0112] 12 mounting main surface

[0113] 13 mounting back surface

[0114] 20 terahertz element

[0115] 21 element main surface

[0116] 22 element back surface

[0117] 33b First gasket

[0118] 34b Second gasket

[0119] 50 Antenna substrate

[0120] 50a Substrate main surface

[0121] 50b Substrate back surface

[0122] 51a First substrate side surface

[0123] 51b Second substrate side surface

[0124] 52 Concave portion

[0125] 53 Antenna surface

[0126] 54, 223, 224 Reflective film

[0127] 54a End of reflective film

[0128] 60 Lead frame

[0129] 61 First lead portion

[0130] 63 First partial opening

[0131] 64 First inner wall surface

[0132] 65, 211 First connecting portion

[0133] 71 Second lead portion

[0134] 73 Second partial opening

[0135] 74 Second inner wall surface

[0136] 75, 212 Second connecting portion

[0137] 80 Opening

[0138] 81 Gap

[0139] 90 Bonding layer

[0140] 94, 101, 304, 305 Electrode

[0141] 94a, 101a Base end portion

[0142] 94b, 101b Bending portion

[0143] 94c, 101c Tip end portion

[0144] 95, 102 Side electrode

[0145] 93, 103... back surface electrode

[0146] 110... circuit substrate

[0147] 120... reflection reducing film

[0148] 131, 132... protection diode

[0149] 141, 142... housing recess

[0150] 200... spacer

[0151] 210... mounting base

[0152] 221... diameter-increased surface

[0153] 222... step surface

[0154] 300... reflection portion

[0155] 301... reflection protrusion

[0156] A1... housing space

[0157] P1... oscillation point

[0158] P2... center point of reflection film

[0159] W1... first wire

[0160] W2... second wire

[0161] θ... opening angle

[0162] 153... mounting main surface

[0163] 154... mounting back surface

[0164] 230... antenna base

[0165] 231... antenna surface

[0166] 233, 283, 290... reflection film

[0167] 170... bonding layer

[0168] 91, 171, 192, 242... first electrode (electrode)

[0169] 92, 172, 202, 252... second electrode (electrode)

[0170] 91a, 92a... inclined portion

[0171] 116... hole

[0172] 180, 220... reflection reducing film

[0173] 150...support substrate (base material)

[0174] 151, 152…Extension

[0175] 160…Wiring pattern

[0176] 191, 201, 241, 251… connection pattern

[0177] 193, 203…back pattern

[0178] 194, 195, 204, 205...through holes

[0179] 260…Spacer

[0180] 270…Installation base

[0181] 281…Expanded diameter surface

[0182] 282…step surface DETAILED DESCRIPTION

[0183] The following describes embodiments of terahertz devices with reference to the accompanying drawings. Each embodiment shown below exemplifies a structure or method for embodying the technical concept. The materials, shapes, structures, configurations, and dimensions of the components are not limited to those described below. Various modifications can be made to the following embodiments. In addition, for ease of explanation, some of the drawings are schematically shown.

[0184] (First embodiment)

[0185] Figures 1-7 The terahertz device 10 of the first embodiment of the present invention includes a mounting plate 11 as a base material, a terahertz element 20 generating electromagnetic waves, an antenna base 50 , a reflective film 54 , electrodes, and a lead frame 60 as a conductive member.

[0186] Figure 1 and Figure 2 It is a perspective view of the terahertz device 10 . Figure 3 This is a top view of the terahertz device 10 . Figure 4 yes Figure 3 4-4 line end view. Figure 5 1 is a bottom view of the terahertz device 10 with the antenna substrate 50 removed, and a front view of the terahertz element 20 and the lead frame 60. Figure 5 In the figure, for the convenience of illustration, electrodes 94 and 101 are shown cut off.

[0187] The mounting plate 11 is formed of a material that transmits the electromagnetic waves generated by the terahertz element 20. In this embodiment, the mounting plate 11 is formed of a dielectric, for example, a synthetic resin such as epoxy resin or a single-crystal intrinsic semiconductor such as Si. An example of the epoxy resin is glass epoxy resin. However, the material of the mounting plate 11 is not limited to this and can be any material, for example, Teflon (registered trademark) or glass. The mounting plate 11 has insulating properties.

[0188] The mounting plate 11 is, for example, in the shape of a rectangular plate. For ease of explanation, the thickness direction of the mounting plate 11 is referred to as the z direction. Furthermore, two directions perpendicular to the z direction and perpendicular to each other are referred to as the x direction and the y direction.

[0189] like Figure 3 and Figure 4 As shown, the mounting plate 11 has a mounting main surface 12 and a mounting back surface 13 as a plate surface intersecting the thickness direction of the mounting plate 11. The mounting main surface 12 and the mounting back surface 13 are planes of rectangular shape. The mounting main surface 12 and the mounting back surface 13 extend in the x-direction and the y-direction and are separated in the z-direction. The shapes of the mounting main surface 12 and the mounting back surface 13 are not limited to rectangular shapes, and may also be circular, elliptical or polygonal. For the convenience of explanation, in this embodiment, the direction away from the mounting back surface 13 in the z-direction is referred to as "above", and the direction away from the mounting main surface 12 in the z-direction is referred to as "below".

[0190] like Figure 5 As shown, the mounting plate 11 of this embodiment has a pair of first plate side surfaces 14 serving as end surfaces in the x-direction, and a pair of second plate side surfaces 15 serving as end surfaces in the y-direction. The pair of first plate side surfaces 14 intersect the x-direction and, in this embodiment, are perpendicular to the x-direction. The pair of second plate side surfaces 15 intersect the y-direction and, in this embodiment, are perpendicular to the y-direction. The first plate side surfaces 14 and the second plate side surfaces 15 are perpendicular to each other.

[0191] The terahertz element 20 converts electromagnetic waves in the terahertz band into electrical energy. The term "electromagnetic waves" encompasses either or both light and radio waves. The terahertz element 20 converts input electrical energy into electromagnetic waves in the terahertz band. This generates electromagnetic waves (terahertz waves). The frequency of the electromagnetic waves generated by the terahertz element 20 ranges from 0.1 Thz to 10 Thz, for example.

[0192] like Figure 5As shown, the terahertz element 20 is rectangular and plate-shaped when viewed from the z-direction (hereinafter also referred to as "top view"). In this embodiment, the terahertz element 20 is square when viewed from above. Furthermore, the top view shape of the terahertz element 20 is not limited to a rectangle and may also be a circle, an ellipse, or a polygon.

[0193] The terahertz element 20 has an element principal surface 21 and an element back surface 22. The element principal surface 21 and the element back surface 22 intersect with the z-direction and, in this embodiment, are orthogonal to the z-direction. The element principal surface 21 and the element back surface 22 are rectangular, for example, square, when viewed in the z-direction. However, the shapes of the element principal surface 21 and the element back surface 22 are not limited to these and are arbitrary.

[0194] like Figure 4 As shown, the terahertz element 20 of this embodiment is mounted on the mounting board 11 with the element back surface 22 in contact with or facing the mounting main surface 12 via an intermediate layer. In other words, the mounting board 11 is a component for mounting the terahertz element 20. The terahertz element 20 is mounted on the mounting board 11.

[0195] The terahertz element 20 has a pair of first element side surfaces 23 as end surfaces in the x-direction, and a pair of second element side surfaces 24 as end surfaces in the y-direction. The pair of first element side surfaces 23 intersect the x-direction and, in this embodiment, are orthogonal to the x-direction. The pair of second element side surfaces 24 intersect the y-direction and, in this embodiment, are orthogonal to the y-direction. The first element side surfaces 23 and the second element side surfaces 24 are orthogonal to each other.

[0196] Figure 6 and Figure 7 An example of a detailed structure of the terahertz element 20 is shown. Figure 6 1 is an example of a schematic cross-sectional view of the terahertz element 20 . Figure 7 yes Figure 6 A partial enlarged view of .

[0197] like Figure 6 and Figure 7 As shown, the terahertz device 20 includes a device substrate 31 , an active device 32 , a first conductive layer 33 , and a second conductive layer 34 .

[0198] The element substrate 31 is formed of a semi-insulating semiconductor. The semiconductor constituting the element substrate 31 may be, for example, InP (indium phosphide) or a semiconductor other than InP. When the element substrate 31 is InP, its refractive index (absolute refractive index) is approximately 3.4. In this embodiment, the element substrate 31 is in the shape of a rectangular plate, for example, a square shape when viewed from above. The element main surface 21 and the element back surface 22 are the main surface and back surface of the element substrate 31, and the two element side surfaces 23 and 24 are the side surfaces of the element substrate 31.

[0199] The active element 32 performs conversion of electromagnetic waves of a terahertz band and electric energy. The active element 32 is formed on the element substrate 31. The active element 32 is typically a resonant tunneling diode (RTD).

[0200] As the active element 32, for example, a tunnel injection transit time (TUNNETT), an impact ionization avalanche transit time (IMPATT), a GaAs-type field effect transistor (FET), a GaN-type FET, a high electron mobility transistor (HEMT), or a heterojunction bipolar transistor (HBT) can be used.

[0201] An example of the active element 32 will be described.

[0202] A semiconductor layer 41a is formed on the element substrate 31. The semiconductor layer 41a is formed of GaInAs, for example. The semiconductor layer 41a is doped with an n-type impurity at a high concentration.

[0203] A GaInAs layer 42a is stacked on the semiconductor layer 41a. The GaInAs layer 42a is doped with an n-type impurity. The impurity concentration of the GaInAs layer 42a is lower than that of the semiconductor layer 41a, for example.

[0204] A GaInAs layer 43a is stacked on the GaInAs layer 42a. The GaInAs layer 43a is not doped with an impurity.

[0205] An AlAs layer 44a is stacked on the GaInAs layer 43a, an InGaAs layer 45 is stacked on the AlAs layer 44a, and an AlAs layer 44b is stacked on the InGaAs layer 45. These AlAs layer 44a, InGaAs layer 45, and AlAs layer 44b constitute an RTD section.

[0206] An undoped GaInAs layer 43b is stacked on AlAs layer 44b. A GaInAs layer 42b doped with n-type impurities is stacked on GaInAs layer 43b. A GaInAs layer 41b is stacked on GaInAs layer 42b. GaInAs layer 41b is doped with a high concentration of n-type impurities. For example, the impurity concentration in GaInAs layer 41b is higher than that in GaInAs layer 42b.

[0207] The specific structure of the active element 32 can be anything as long as it can generate electromagnetic waves (or receive or both). In other words, the active element 32 can be any element that oscillates electromagnetic waves in the terahertz band.

[0208] like Figure 5 As shown, the terahertz element 20 has an oscillation point P1 where electromagnetic waves oscillate. Oscillation point P1 is formed on the element main surface 21. The element main surface 21 having oscillation point P1 can also be called the active surface. In addition, oscillation point P1 can also be called the location where the active element 32 is installed.

[0209] The oscillation point P1 (active element 32) of this embodiment is arranged at the center of the element principal surface 21. However, the position of the oscillation point P1, in other words, the position of the active element 32 relative to the element principal surface 21 is not limited to the center of the element principal surface 21 but is arbitrary.

[0210] In this embodiment, the first perpendicular distance x1 between the first element side surface 23 and the oscillation point P1 is (λ'InP / 2)+((λ'InP / 2)×N), where N is an integer greater than 0: N=0, 1, 2, 3, . . .

[0211] λ'InP is the effective wavelength of the electromagnetic wave propagating within the terahertz element 20. When the refractive index of the terahertz element 20 (element substrate 31) is n1, c is the speed of light, and fc is the center frequency of the electromagnetic wave, λ'InP is (1 / n1) × (c / fc). By setting the first perpendicular distance x1 as described above, the electromagnetic wave oscillating from the terahertz element 20 is reflected from the free end of the first element side surface 23. Thus, the terahertz element 20 itself is designed as a resonator (primary resonator) in the terahertz device 10.

[0212] Similarly, a second perpendicular distance y1 between the second element side surface 24 and the oscillation point P1 is (λ′InP / 2)+((λ′InP / 2)×N), where N is an integer greater than 0: N=0, 1, 2, 3, . . .

[0213] If the vertical distances x1 and y1 are calculated by the above formula, the vertical distances x1 and y1 can be different values ​​for each of the element side surfaces 23 and 24.Figure 5 In this case, the first vertical distance x1 of the first element side surface 23 on the right side from the oscillation point P1 and the first vertical distance x1 of the first element side surface 23 on the left side from the oscillation point P1 can also be different. Similarly, in this case, the second vertical distance y1 of the second element side surface 24 on the upper side from the oscillation point P1 and the second vertical distance y1 of the second element side surface 24 on the lower side from the oscillation point P1 can also be different. Figure 5 In this case, the first vertical distance x1 of the first element side surface 23 on the right side from the oscillation point P1 and the first vertical distance x1 of the first element side surface 23 on the left side from the oscillation point P1 can also be different. Similarly, in this case, the second vertical distance y1 of the second element side surface 24 on the upper side from the oscillation point P1 and the second vertical distance y1 of the second element side surface 24 on the lower side from the oscillation point P1 can also be different.

[0214] The z-direction dimension of the terahertz element 20 can be designed, for example, in correspondence with the frequency of the electromagnetic wave to be oscillated. Specifically, the z-direction dimension of the terahertz element 20 can be an integer multiple of 1 / 2 times (i.e., λ / 2) the wavelength λ of the electromagnetic wave. At the interface of the element substrate 31 and the air, the electromagnetic wave undergoes free-end reflection. Thus, by setting the z-direction dimension of the terahertz element 20 in the above-described manner, a standing wave with a uniform phase can be excited inside the terahertz element 20. Further, the z-direction dimension of the terahertz element 20 is such that the higher the frequency of the electromagnetic wave, the smaller the z-direction dimension, and the lower the frequency of the electromagnetic wave, the larger the z-direction dimension.

[0215] Further, the structure of the terahertz element 20 is not limited to the above-described structure. For example, a back surface reflector metal layer can also be provided on the element back surface 22 on the side opposite to the element front surface 21 of the element substrate 31 on which the active element 32 is provided. In this case, the electromagnetic wave (electromagnetic wave) radiated from the active element 32 is reflected by this back surface reflector metal layer.

[0216] In the case where the back surface reflector metal layer is provided, because the electromagnetic wave undergoes fixed-end reflection at the interface of the element substrate 31 and the back surface reflector metal layer, the phase is shifted by π. Thus, in this case, the z-direction dimension of the terahertz element 20, when the wavelength of the electromagnetic wave is set to λ, can be designed to be (λ / 4) + (an integer multiple of λ / 2).

[0217] In the present embodiment, the electromagnetic wave generated from the oscillation point P1 has directivity. As shown in FIG. 6, the electromagnetic wave generated from the oscillation point P1 is radiated in a radiating manner over the range of the opening angle θ. The opening angle θ is, for example, 120° to 180°. However, the opening angle θ is not limited thereto, but is arbitrary. Figure 4

[0218] ​The first conductive layer 33 and the second conductive layer 34 are formed on the element main surface 21, respectively. The first conductive layer 33 and the second conductive layer 34 are insulated from each other. The first conductive layer 33 and the second conductive layer 34 each have a layered structure of metal. The layered structure of each of the first conductive layer 33 and the second conductive layer 34 is, for example, a structure in which Au (gold), Pd (palladium), and Ti (titanium) are layered. Alternatively, the layered structure of each of the first conductive layer 33 and the second conductive layer 34 is a structure in which Au and Ti are layered. The first conductive layer 33 and the second conductive layer 34 are each formed by a vacuum evaporation method or a sputtering method, or the like.

[0219] As shown in FIG. 2, in the present embodiment, a portion of the first conductive layer 33 and a portion of the second conductive layer 34 are arranged on both sides of the active element 32 in the x direction. The first conductive layer 33 has a first connection region 33a that overlaps the active element 32 in the z direction. The first connection region 33a is located on the GaInAs layer 41b and is in contact with the GaInAs layer 41b. Figure 6

[0220] In addition, the semiconductor layer 41a extends further in the x direction toward the second conductive layer 34 than the other layers such as the GaInAs layer 42a. The second conductive layer 34 has a second connection region 34a that is layered in a portion of the semiconductor layer 41a in which the GaInAs layer 42a and the like are not layered. Thus, the active element 32 is in conduction with the first conductive layer 33 and the second conductive layer 34. Further, the second connection region 34a is apart from the other layers such as the GaInAs layer 42a in the x direction.

[0221] Although not shown, unlike FIG. 2, a GaInAs layer doped with an n-type impurity at a high concentration can also be interposed between the GaInAs layer 41b and the first connection region 33a. Thus, the contact of the first conductive layer 33 with the GaInAs layer 41b becomes good. Figure 7 As shown in FIG. 2, a portion of the first conductive layer 33 and a portion of the second conductive layer 34 constitute a dipole antenna. That is, the terahertz element 20 integrates an antenna on the element main surface 21 side by the portion of the first conductive layer 33 and the portion of the second conductive layer 34. Further, the antenna is not limited to a dipole antenna, but can be another antenna such as a slot antenna, a bowtie antenna, or a loop antenna. In addition, there can be no antenna.

[0222] Figure 5

[0223] ​​​The terahertz element 20 of this embodiment also includes a MIM (Metal Insulator Metal) reflector 35. The MIM reflector 35 is formed by sandwiching an insulator between a portion of the first conductive layer 33 and a portion of the second conductive layer 34 in the z-direction. The MIM reflector 35 short-circuits a portion of the first conductive layer 33 and a portion of the second conductive layer 34 at high frequencies. The MIM reflector 35 can reflect high-frequency electromagnetic waves. However, the MIM reflector 35 is not required and can be omitted.

[0224] like Figure 5 As shown, the first conductive layer 33 has a first pad 33b, and the second conductive layer 34 has a second pad 34b. The first pad 33b and the second pad 34b are separated from each other in the x-direction and are insulated from each other.

[0225] like Figure 2 As shown, the antenna base 50 has, for example, a rectangular parallelepiped shape as a whole. It is formed, for example, from an insulating material. Specifically, the antenna base 50 is formed from a dielectric, for example, a synthetic resin such as epoxy resin. An example of the epoxy resin is glass epoxy resin. However, the material of the antenna base 50 is not limited to this and can be any material, such as silicon, Teflon, or glass.

[0226] The antenna base 50 is disposed on the mounting main surface 12 side, opposite the mounting rear surface 13 side, of the mounting board 11. The antenna base 50 is disposed at a position facing the mounting board 11. Specifically, the antenna base 50 faces the mounting board 11 in the z-direction via the lead frame 60. The z-direction can be considered the direction in which the antenna base 50 and the mounting board 11 face each other.

[0227] The antenna base 50 includes a base principal surface 50 a facing the mounting principal surface 12 , a base rear surface 50 b opposite to the base principal surface 50 a , and a base side surface 51 .

[0228] The substrate principal surface 50a and the substrate back surface 50b are surfaces intersecting the z-direction, and in this embodiment, are orthogonal to the z-direction. The substrate principal surface 50a and the substrate back surface 50b are, for example, rectangular (e.g., square). The substrate back surface 50b constitutes the bottom surface of the terahertz device 10.

[0229] In this embodiment, the substrate side surface 51 is a side-facing surface of the terahertz device 10 (antenna substrate 50). The substrate side surface 51 can be considered an end surface of the antenna substrate 50 that is perpendicular to the relative direction of the substrate principal surface 50a and the substrate back surface 50b. The substrate side surface 51 connects the substrate principal surface 50a and the substrate back surface 50b.

[0230] In this embodiment, four base side surfaces 51 are provided. Specifically, the base side surfaces 51 include a first base side surface 51a and a second base side surface 51b, which serve as the two end surfaces of the antenna base 50 in the x-direction, and a third base side surface 51c and a fourth base side surface 51d, which serve as the two end surfaces of the antenna base 50 in the y-direction. The first base side surface 51a and the second base side surface 51b intersect the x-direction and, in this embodiment, are orthogonal to the x-direction. The third base side surface 51c and the fourth base side surface 51d intersect the y-direction and, in this embodiment, are orthogonal to the y-direction. The first base side surface 51a and the second base side surface 51b are orthogonal to the third base side surface 51c and the fourth base side surface 51d.

[0231] The antenna base 50 has a recessed portion 52 formed therein, recessed relative to the base principal surface 50a in a direction away from the mounting principal surface 12. The recessed portion 52 is recessed downward, away from the base principal surface 50a and the mounting principal surface 12. In this embodiment, the recessed portion 52 is formed as a whole in a hemispherical shape. The recessed portion 52 is filled with air.

[0232] The recess 52 opens upward. The opening of the recess 52 is circular when viewed from the z direction. The opening of the recess 52 is closed by the mounting plate 11. In this embodiment, the terahertz element 20 is accommodated in the recess 52.

[0233] Recess 52 has an antenna surface 53. Antenna surface 53 is, for example, a curved surface that is convex downward. Antenna surface 53 is formed to correspond to the shape of the antenna. For example, antenna surface 53 is curved to form a parabolic antenna. Antenna surface 53 is circular when viewed from above.

[0234] like Figure 4 As shown, a reflective film 54 is formed on the antenna surface 53. The reflective film 54 is formed of a material that reflects electromagnetic waves generated by the terahertz element 20, for example, a metal such as Cu. In this embodiment, the reflective film 54 is formed over the entire antenna surface 53. On the other hand, the reflective film 54 is not formed on the base main surface 50a.

[0235] The reflective film 54 is a component that reflects at least a portion of the electromagnetic waves from the terahertz element 20 in one direction. In this embodiment, the reflective film 54 reflects the electromagnetic waves from the terahertz element 20 in the z-direction (specifically, upward). In other words, the reflective film 54 can be said to guide the electromagnetic waves, which are radially irradiated across the range of the aperture angle θ, in one direction.

[0236] Specifically, the reflecting film 54 is shaped like an antenna. In the present embodiment, because the antenna surface 53 is curved in correspondence with the antenna shape, the reflecting film 54 formed on the antenna surface 53 naturally becomes the antenna shape. In the present embodiment, the reflecting film 54 becomes a parabolic antenna shape. In other words, the reflecting film 54 becomes a parabolic mirror. The reflecting film 54 is circular in shape when viewed in the z direction.

[0237] The reflecting film 54 is opposite to the mounting plate 11 in the z direction. In other words, the mounting plate 11 is disposed at a position opposite to the reflecting film 54, above the reflecting film 54 in the present embodiment. Therefore, the electromagnetic wave reflected by the reflecting film 54 is transmitted through the mounting plate 11 and irradiated upward.

[0238] The reflecting film 54 is not disposed on the element back surface 22, but on the element main surface 21 side where the oscillation point Pl exists, opposite to the terahertz element 20 (the element main surface 21 in the present embodiment). The reflecting film 54 is disposed, for example, in such a manner that the focal point of the reflecting film 54 becomes the oscillation point Pl. In the present embodiment, the center point P2 of the reflecting film 54 coincides with the oscillation point Pl when viewed in the z direction. In the present embodiment, the center point P2 is the center of the circular reflecting film 54 when viewed in the z direction.

[0239] In addition, when the vertical distance from the oscillation point Pl to the reflecting film 54 is set as a prescribed distance zl, the coordinate in the z direction of the reflecting film 54 is set as Z, and the position in the x direction of the reflecting film 54 is set as X, the antenna surface 53 can be curved in such a manner that Z = (1 / (4z1))X is satisfied. 2 However, the curved shape of the antenna surface 53 is not limited thereto, but is arbitrary.

[0240] The z direction can also be said to be the opposite direction of the reflecting film 54 and the terahertz element 20 (the element main surface 21), and can also be said to be the output direction of the electromagnetic wave of the terahertz device 10. In addition, the z direction can also be said to be the opposite direction of the center point P2 of the reflecting film 54 and the oscillation point Pl, and the prescribed distance zl can also be said to be the distance between the oscillation point Pl and the center point P2.

[0241] In addition, the reflecting film 54 is disposed at a position corresponding to the frequency of the electromagnetic wave generated from the terahertz element 20 in such a manner that resonance occurs with the electromagnetic wave. Specifically, the prescribed distance zl can be, for example, (λ A / 4) + ((λ A / 2) x N) (where N is an integer of 0 or more) in order to satisfy the resonance condition of the electromagnetic wave generated from the terahertz element 20. λ A is (1 / n A )(c / fc) (c: speed of light, fc: center frequency of oscillation). n Ais the refractive index of an object present between the oscillation point P1 and the reflecting film 54. For example, in the case where air is present therebetween, n A is "1". The fc can be said to be a target frequency of the terahertz element 20, or a frequency at which the largest output is made from among the electromagnetic waves generated from the terahertz element 20.

[0242] The distance from the end to the end of the reflecting film 54 in the x direction or the y direction, as viewed in the z direction, is referred to as the opening width of the reflecting film 54. In the present embodiment, the reflecting film 54 is formed over the entire antenna surface 53, and thus the opening width of the reflecting film 54 coincides with the opening width of the recess 52. Further, the opening width of the recess 52 can also be said to be the opening diameter of the recess 52 formed in a circular shape.

[0243] The reflecting film 54 is formed, for example, over an angle of θ or more with respect to the oscillation point P1. Specifically, the antenna surface 53 is formed over an angle of θ or more with the oscillation point P1 as the center. Also, as described above, the reflecting film 54 of the present embodiment is formed over the entire antenna surface 53. In the present embodiment, the angle at which the reflecting film 54 is formed with respect to the oscillation point P1 is larger than 180°. Thus, in the present embodiment, the electromagnetic waves irradiated from the oscillation point P1 within the opening angle θ are all reflected by the reflecting film 54.

[0244] Here, in the present embodiment, the length of the antenna substrate 50 in the z direction is larger than the length of the mounting plate 11 in the z direction, that is, the thickness of the mounting plate 11. Also, the length of the antenna substrate 50 in the x direction is set to be the same as the length of the mounting plate 11 in the x direction. Further, the length of the antenna substrate 50 in the y direction is set to be the same as the length of the mounting plate 11 in the y direction. However, the length relationship between the antenna substrate 50 and the mounting plate 11 is arbitrary.

[0245] As shown in Figs. 1 and 2, the antenna substrate 50 is mounted to the mounting main surface 12 of the mounting plate 11. The antenna substrate 50 is joined to the mounting plate 11 in a state of being in close contact with the mounting plate 11, and is fixed in a state where misalignment does not occur. Figure 4 Figure 5 As shown in Figs. 1 and 2, the antenna substrate 50 is mounted to the mounting main surface 12 of the mounting plate 11. The antenna substrate 50 is joined to the mounting plate 11 in a state of being in close contact with the mounting plate 11, and is fixed in a state where misalignment does not occur.

[0246] The lead frame 60 is, for example, a rectangular plate shape with the z direction as the thickness direction. The lead frame 60 of the present embodiment is formed to be thicker than the mounting plate 11. In other words, the mounting plate 11 of the present embodiment is formed to be thinner than the lead frame 60.

[0247] ​The lead frame 60 has a first lead portion 61 and a second lead portion 71 insulated from each other. The first lead portion 61 and the second lead portion 71 are, for example, oppositely arranged apart in the x direction, have first lead opposing surfaces 62 and second lead opposing surfaces 72 oppositely arranged apart in the x direction from each other. The two lead opposing surfaces 62, 72 of the present embodiment are orthogonal with respect to the x direction. In the present embodiment, the first lead portion 61 and the second lead portion 71 correspond to the "first conductive portion" and the "second conductive portion".

[0248] The first lead portion 61 and the second lead portion 71 protrude more laterally than the mounting plate 11, in the present embodiment, in the x direction as viewed in the z direction. On the other hand, the lengths of the two lead portions 61, 71 in the y direction are set to be shorter than the length of the mounting plate 11 in the y direction, for example, to be the same as the length of the antenna base 50 in the y direction. Thus, the lead frame 60 of the present embodiment is less likely to protrude in the y direction with respect to the mounting plate 11.

[0249] The lead frame 60 is formed so as to avoid the reflective film 54 (the recess 52) in a manner not to overlap as viewed in the z direction. Specifically, the lead frame 60 has an opening portion 80 formed therein so as to overlap at least a portion of the reflective film 54 as viewed in the z direction.

[0250] The opening portion 80 is constituted, for example, by a gap 81 provided between the two lead portions 61, 71, a first partial opening portion 63 formed in the first lead portion 61, and a second partial opening portion 73 formed in the second lead portion 71.

[0251] The gap 81 is slit-like extending in the y direction, and includes a space between the two lead opposing surfaces 62, 72 and a space between the two partial opening portions 63, 73.

[0252] The first partial opening portion 63 is formed in a portion of the first lead portion 61 overlapping the reflective film 54 as viewed in the z direction. The second partial opening portion 73 is formed in a portion of the second lead portion 71 overlapping the reflective film 54 as viewed in the z direction.

[0253] The first partial opening portion 63 and the second partial opening portion 73 are through in the z direction, and communicate with the recess 52. The first partial opening portion 63 and the second partial opening portion 73 are oppositely arranged apart in the x direction with the gap 81 therebetween. The two partial opening portions 63, 73 are open in the x direction. The first partial opening portion 63 is open toward the second lead portion 71, and the second partial opening portion 73 is open toward the first lead portion 61. Thus, the two partial opening portions 63, 73 communicate with the gap 81.

[0254] The first and second openings 63 and 73 are each formed into a semicircular shape when viewed in the z-direction. The first and second openings 63 and 73 form a circular hole. The terahertz element 20 can be positioned at the center of the circle formed by the two openings 63 and 73. The diameter of the circle formed by the two openings 63 and 73 can be, for example, equal to or greater than the opening width of the reflective film 54.

[0255] The first lead portion 61 has a first inner wall surface 64 as the inner wall surface of the first partial opening 63. The first inner wall surface 64 is a concave surface that is recessed relative to the first lead-facing surface 62 in a direction away from the second lead-facing surface 72.

[0256] The second lead portion 71 has a second inner wall surface 74 as the inner wall surface of the second partial opening 73. The second inner wall surface 74 is a concave surface that is concave relative to the second lead-facing surface 72 in a direction away from the first lead-facing surface 62.

[0257] The first inner wall surface 64 and the second inner wall surface 74 are curved so as to be convex away from each other. The inner wall surfaces 64 and 74 extend along the end 54a of the reflective film 54, i.e., the outer side of the opening edge of the recess 52, so that the lead portions 61 and 71 do not overlap with the reflective film 54.

[0258] like Figure 5 As shown, the first lead portion 61 of this embodiment includes a first connection portion 65 for electrically connecting to the terahertz element 20. The first connection portion 65 of this embodiment is a portion of the first lead portion 61 that protrudes toward the terahertz element 20 from a portion that does not overlap with the recess 52 (in other words, the reflective film 54) when viewed in the z-direction. Specifically, the first connection portion 65 is a protruding piece that protrudes from the first inner wall surface 64 toward the terahertz element 20. The first connection portion 65 overlaps with the reflective film 54 when viewed in the z-direction. The first connection portion 65 is connected to the first pad 33b via a first wire W1. Thus, the first lead portion 61 is electrically connected to the terahertz element 20.

[0259] In this embodiment, the protrusion dimension of the first connection portion 65 from the first inner wall surface 64 is shorter than the length of the first wire W1 viewed in the z direction. For example, the protrusion dimension is shorter than ¼ of the opening width of the reflective film 54 .

[0260] Similarly, the second lead portion 71 of this embodiment includes a second connection portion 75 for electrically connecting to the terahertz element 20. The second connection portion 75 of this embodiment is a portion of the second lead portion 71 that protrudes toward the terahertz element 20 from the portion that does not overlap with the recess 52 (in other words, the reflective film 54) when viewed in the z-direction. Specifically, the second connection portion 75 is a protruding piece that protrudes from the second inner wall surface 74 toward the terahertz element 20. The second connection portion 75 overlaps with the recess 52 (in other words, the reflective film 54) when viewed in the z-direction. The second connection portion 75 is connected to the second pad 34b via a second wire W2. Thus, the second lead portion 71 is electrically connected to the terahertz element 20.

[0261] In this embodiment, the protrusion dimension of the second connection portion 75 from the second inner wall surface 74 is shorter than the length of the second wire W2 viewed in the z direction. For example, the protrusion dimension is shorter than ¼ of the opening width of the reflective film 54 .

[0262] In this embodiment, the first connection portion 65 and the second connection portion 75 are disposed opposite each other with the terahertz element 20 interposed therebetween. For example, the two connection portions 65 and 75 are disposed symmetrically in the x-direction. In other words, the two connection portions 65 and 75 are disposed at positions 180° apart from each other when viewed in the z-direction.

[0263] like Figure 4 As shown, the terahertz device 10 includes a bonding layer 90 that bonds the antenna base 50 to the lead frame 60. The bonding layer 90 is formed of, for example, an insulating material, such as a resin-based bonding agent. The bonding layer 90 is provided between the base main surface 50a of the antenna base 50 and the lead frame 60. The antenna base 50 is bonded to the lead frame 60 via the bonding layer 90. Thus, the mounting board 11, the lead frame 60, and the antenna base 50 are unitized. That is, by unitizing the mounting board 11 as a base material and the antenna base 50 so that they are not misaligned, the terahertz element 20 mounted on the mounting board 11 and the reflective film 54 formed on the antenna base 50 are unitized so that they are not misaligned.

[0264] The bonding layer 90 is interposed between the reflective film 54 and the lead frame 60. The bonding layer 90 constrains the reflective film 54 and the lead frame 60 so that they cannot be electrically connected. As described above, the reflective film 54 is not electrically connected to either the antenna substrate 50 or the lead frame 60 and is in an electrically floating state.

[0265] In particular, in the present embodiment, the inner peripheral end of the bonding layer 90 protrudes inward of the reflective film 54 (in other words, the terahertz element 20 side). Thus, it is difficult for the reflective film 54 to come into contact with the lead frame 60 while avoiding the bonding layer 90. The inner peripheral end of the bonding layer 90 refers to the end of the bonding layer 90 on the terahertz element 20 side. The inner peripheral end of the bonding layer 90 is, for example, circular in shape as viewed in the z direction in correspondence with the recess 52. However, the shape of the inner peripheral end of the bonding layer 90 is arbitrary and can be rectangular in shape.

[0266] The terahertz element 20 and the reflective film 54 can be said to be housed in a housing space Al divided by the mounting plate 11 and the recess 52. In the present embodiment, the housing space Al is a space divided by the mounting main surface 12 and the antenna surface 53. The housing space Al of the present embodiment is sealed by the bonding layer 90 and the like, and air exists in the housing space Al.

[0267] As shown in FIG. 1, the terahertz device 10 has a first electrode 94 and a second electrode 101 for electrical connection with the outside. In the present embodiment, the first electrode 94 and the second electrode 101 are constituted by the lead frame 60 bent along the antenna base 50. Figures 3-5

[0268] Specifically, the first lead portion 61 extends outward of the antenna base 50 from the first base side surface 51a and is bent along the antenna base 50 to reach the base back surface 50b. The first electrode 94 is constituted by the above-mentioned bent portion in the first lead portion 61.

[0269] The first electrode 94 includes a first base end portion 94a bent at an angle portion of the first base side surface 51a and the base main surface 50a in a manner to face the first base side surface 51a, a first bent portion (or bent portion) 94b bent at an angle portion of the first base side surface 51a and the base back surface 50b, and a first front end portion 94c disposed on the base back surface 50b. The first electrode 94 is formed in an L shape as viewed in the y direction, and is formed across the first base side surface 51a and the base back surface 50b.

[0270] The first electrode 94 has a first side surface electrode 95 formed on the first base side surface 51a, and a first back surface electrode 93 formed on the base back surface 50b. The first side surface electrode 95 is a portion of the first electrode 94 from the first base end portion 94a to the first bent portion 94b, and is formed on the entirety of the first base side surface 51a. The first back surface electrode 93 is a portion of the first electrode 94 from the first bent portion 94b to the first front end portion 94c.

[0271] ​Similarly, the second lead portion 71 extends from the second substrate side surface 51b outward of the antenna substrate 50, is bent along the antenna substrate 50, and reaches the substrate back surface 50b. The second electrode 101 is constituted by the above-mentioned bent portion in the second lead portion 71.

[0272] The second electrode 101 includes a second base end portion 101a bent at an angle portion of the second substrate side surface 51b and the substrate main surface 50a in a manner to face the second substrate side surface 51b, a second bent portion (or curved portion) 101b bent at an angle portion of the second substrate side surface 51b and the substrate back surface 50b, and a second front end portion 101c disposed on the substrate back surface 50b. The second electrode 101 is formed in an L-letter shape as viewed in the y direction, and is formed across the second substrate side surface 51b and the substrate back surface 50b.

[0273] The second electrode 101 has a second side surface electrode 102 formed on the second substrate side surface 51b, and a second back surface electrode 103 formed on the substrate back surface 50b. The second side surface electrode 102 is a portion of the second electrode 101 from the second base end portion 101a to the second bent portion 101b, and is formed on the entire second substrate side surface 51b. The second back surface electrode 103 is a portion of the second electrode 101 from the second bent portion 101b to the second front end portion 101c.

[0274] In the present embodiment, the two electrodes 94, 101 are formed in left-right symmetry. In addition, the first front end portion 94c and the second front end portion 101c are apart in the x direction, and thus the insulation of the two electrodes 94, 101 can be ensured.

[0275] Further, the width, which is the length of the two electrodes 94, 101 in the y direction, is set to be the same as the length of the antenna substrate 50 in the y direction. However, it is not limited thereto, and the width of the two electrodes 94, 101 can be arbitrarily changed, and for example, can be shorter than the length of the antenna substrate 50 in the y direction.

[0276] Here, as explained in the foregoing, the length of the antenna substrate 50 in the z direction is larger than the thickness of the mounting plate 11. In addition, the length of the antenna substrate 50 in the z direction is larger than the dimension obtained by adding the thickness of the mounting plate 11 and the thickness of the lead frame 60. The lead frame 60 disposed between the antenna substrate 50 and the mounting plate 11 is disposed on the upper side in the terahertz device 10. Therefore, the first base end portion 94a and the second base end portion 101a are disposed on the upper side in the terahertz device 10.

[0277] That is, when the z direction is taken as the thickness direction of the terahertz device 10, the first base end portion 94a and the second base end portion 101a are disposed so as to be biased upward (in other words, the mounting plate 11 side or the output side of the electromagnetic wave) from the central portion of the thickness direction of the terahertz device 10.

[0278] like Figure 4 As shown, the terahertz device 10 is mounted on, for example, a circuit substrate 113 having a wiring pattern 114 formed thereon. Specifically, the terahertz device 10 is disposed so that the base back surface 50b faces the circuit substrate 113, and is mounted on the circuit substrate 113 in a state where the back electrodes 93 and 103 and the wiring pattern 114 are bonded together using a conductive bonding material 115 such as solder.

[0279] Next, a method for manufacturing the terahertz device 10 of this embodiment will be described. For the sake of convenience, first, a method for manufacturing one terahertz device 10 will be described.

[0280] like Figure 8 As shown, the manufacturing method of the terahertz device 10 includes a step of molding a lead frame 60. In this step, a first lead portion 61 having a first partial opening 63 and a first connection portion 65 and a second lead portion 71 having a second partial opening 73 and a second connection portion 75 are formed.

[0281] like Figure 9 As shown, the method for manufacturing the terahertz device 10 includes a step of molding the mounting plate 11. In this step, the mounting plate 11 is molded so as to span the two lead portions 61 and 71. The specific molding method of the mounting plate 11 is arbitrary.

[0282] Afterwards, if Figure 10 As shown, the method for manufacturing the terahertz device 10 includes a step of mounting the terahertz element 20 on the mounting plate 11. In this step, the terahertz element 20 is mounted on the surface of the mounting plate 11 on the side where the lead frame 60 is provided. This unitizes the lead frame 60, the mounting plate 11, and the terahertz element 20.

[0283] like Figure 11 As shown, the method for manufacturing the terahertz device 10 includes a step of electrically connecting the terahertz element 20 to the two lead portions 61 and 71 using two wires W1 and W2. In this step, the first wire W1 is bonded to the first pad 33b and the first lead portion 61, and the second wire W2 is bonded to the second pad 34b and the second lead portion 71. The order of bonding is arbitrary.

[0284] like Figure 12 As shown, the method for manufacturing the terahertz device 10 includes a step of forming a recess 52 in the antenna substrate 50. In this step, the recess 52 having the antenna surface 53 is formed using a mold formed corresponding to the antenna surface 53.

[0285] like Figure 13As shown, the method for manufacturing the terahertz device 10 includes a step of forming a metal film constituting the reflective film 54 after forming the recess 52. In this step, the metal film is formed on both the base principal surface 50a and the antenna surface 53.

[0286] like Figure 14 As shown, the method for manufacturing the terahertz device 10 includes a step of removing the metal film formed on the substrate principal surface 50a. The specific method for removing the metal film from the substrate principal surface 50a is arbitrary, and can be, for example, patterning or polishing. This leaves the metal film, which serves as the reflective film 54, formed only on the antenna surface 53.

[0287] The steps for forming the metal film are not limited to the steps described above. For example, the method for manufacturing the terahertz device 10 may also include: a step of masking the substrate principal surface 50a; and a step of forming a metal film on the antenna surface 53 by evaporation using an electron beam, for example. In this case, the step of removing the metal film formed on the substrate principal surface 50a is unnecessary.

[0288] like Figure 15 As shown, the manufacturing method of the terahertz device 10 includes the steps of assembling: a unit body consisting of a lead frame 60, a mounting plate 11, and a terahertz element 20; and an antenna substrate 50 having a reflective film 54 formed thereon. In this step, the antenna substrate 50 and the lead frame 60 are bonded together using a bonding layer 90.

[0289] Afterwards, if Figure 16 As shown, the method for manufacturing the terahertz device 10 includes a first bending step of bending the lead frame 60. In the first bending step, the lead frame 60 (the two lead portions 61 and 71) that protrude laterally from the antenna base 50 is bent at the corners of the antenna base 50 so as to follow the base side surfaces 51a and 51b of the antenna base 50. This forms the side electrodes 95 and 102.

[0290] Then, if Figure 17 As shown, the method for manufacturing the terahertz device 10 includes a second bending step of further bending the lead frame 60. In the second bending step, the lead frame 60, which protrudes upward from the antenna base 50, is bent at the corner of the antenna base 50 so as to follow the back surface 50b of the antenna base 50. This forms the bent portions 94b and 101b and the back electrodes 93 and 103. Thus, the terahertz device 10 is completed.

[0291] Furthermore, for the sake of convenience, a method for manufacturing one terahertz device 10 has been described, but in practice, a plurality of terahertz devices 10 can be manufactured simultaneously.

[0292] For example, Figure 18As shown, even in a method of forming multiple lead frames 60, a metal plate 111 is prepared in which portions serving as openings 80 are punched, and multiple mounting plates 11 and multiple terahertz elements 20 are mounted on this metal plate 111. First through-holes 111a are punched along the ends of the lead frames 60 in the y direction in the metal plate 111. The first through-holes 111a are, for example, slit-shaped, extending longer in both directions of the x direction than the mounting plate 11 by an amount corresponding to the electrodes 94 and 101.

[0293] On the other hand, Figure 19 As shown, a base body 112 having a plurality of recesses 52 and a reflective film 54 is prepared. Second through-holes 112a are formed in the base body 112 corresponding to the portion where the lead frame 60 is to be exposed. The second through-holes 112a are formed in the portion opposite the electrodes 94 and 101 when the metal plate 111 and the base body 112 are bonded together. Furthermore, after the metal plate 111, on which the mounting plate 11 and the terahertz element 20 are mounted, is aligned with the base body 112, they are bonded together using an adhesive and then cut using a cutting machine. The lead frame 60 is then bent. In this manner, a plurality of terahertz devices 10 are manufactured.

[0294] Here, when the metal plate 111 and the base 112 are bonded together, the metal plate 111 and the base 112 may be positioned so that the first positioning portion 111 b formed on the metal plate 111 overlaps the second positioning portion 112 b formed on the base 112 .

[0295] Next, the effects of this embodiment will be described.

[0296] The electromagnetic wave generated from the oscillation point P1 of the terahertz element 20 is reflected by the reflective film 54 and irradiated in one direction.

[0297] Furthermore, in this embodiment, the two electrodes 94 and 101 are also formed on the substrate back surface 50b constituting the bottom surface of the terahertz device 10. Thus, the terahertz device 10 can be mounted on the circuit substrate 113 with the substrate back surface 50b facing the circuit substrate 113, thereby making it easy to mount the terahertz device 10 on the circuit substrate 113.

[0298] According to the present embodiment described in detail above, the following effects are achieved.

[0299] (1-1) The terahertz device 10 has: a mounting board 11 as a base material; a terahertz element 20 mounted on the mounting board 11; an antenna base 50 provided at a position opposite to the mounting board 11, having an antenna surface 53; and a reflecting film 54 formed on the antenna surface 53. The reflecting film 54 reflects at least a part of electromagnetic waves generated from the terahertz element 20 in one direction (for example, upward). According to this structure, electromagnetic waves generated from the terahertz element are irradiated in one direction. Thus, it is possible to increase the output of electromagnetic waves irradiated from the terahertz device 10. Therefore, it is possible to achieve an increase in the gain of the terahertz device 10.

[0300] (1-2) The terahertz device 10 has electrodes 94, 101 for electrical connection with the outside. The electrodes 94, 101 include: side surface electrodes 95, 102 formed on the base side surfaces 51a, 51b; and a back surface electrode 93, 103 formed on the base back surface 50b. According to this structure, the side surface electrodes 95, 102 or the back surface electrode 93, 103 can be easily electrically connected with the wiring pattern 114 of the circuit board 113, and thus the mounting of the terahertz device 10 to the circuit board 113 can be easily performed.

[0301] (1-3) The electrodes 94, 101 are constituted by a lead frame 60 bent along the antenna base 50. According to this structure, the lead frame 60, which is comparatively easy to bend and process, is adopted as the electrodes 94, 101. Thus, it is possible to easily form the side surface electrodes 95, 102 and the back surface electrode 93, 103. In addition, the lead frame 60 is bent along the antenna base 50, and thus it is possible to suppress the lead frame 60 from protruding sideways. Thus, it is possible to achieve a reduction in the size of the terahertz device 10 in the x direction.

[0302] (1-4) The first electrode 94 has: a first base end portion 94a bent at an angle portion of the first base side surface 51a and the base main surface 50a in a manner to face the first base side surface 51a; a first bent portion 94b bent at an angle portion of the first base side surface 51a and the base back surface 50b; and a first front end portion 94c disposed on the base back surface 50b. The first side surface electrode 95 is a portion from the first base end portion 94a to the first bent portion 94b, and the first back surface electrode 93 is a portion from the first bent portion 94b to the first front end portion 94c.

[0303] Likewise, the second electrode 101 has a second base end portion 101a bent at an angle portion of the second base side surface 51b and the base front surface 50a in a manner to go toward the second base side surface 51b, a second bent portion 101b bent at an angle portion of the second base side surface 51b and the base back surface 50b, and a second front end portion 101c disposed on the base back surface 50b. The second side surface electrode 102 is a portion from the second base end portion 101a to the second bent portion 101b, and the second back surface electrode 103 is a portion from the second bent portion 101b to the second front end portion 101c.

[0304] According to this structure, the side surface electrodes 95, 102 and the back surface electrodes 93, 103 are formed by completely bending the lead frame 60 with each of the angle portions of the antenna base 50 as a fulcrum. Thus, the side surface electrodes 95, 102 and the back surface electrodes 93, 103 can be formed more easily.

[0305] (1-5) The two front end portions 94c, 101c are apart in the x direction. According to this structure, insulation of the two electrodes 94, 101 can be ensured.

[0306] (1-6) The terahertz element 20 includes an element front surface 21 having an oscillation point Pl of electromagnetic waves, and an element back surface 22 on the opposite side of the element front surface 21. The reflecting film 54 is not disposed on the element back surface 22 side but on the element front surface 21 side. According to this structure, electromagnetic waves easily reach the reflecting film 54, and thus the reflecting film 54 can appropriately reflect electromagnetic waves generated from the oscillation point Pl.

[0307] (1-7) The terahertz element 20 radiates electromagnetic waves from the oscillation point Pl over a range of an opening angle Θ. The reflecting film 54 is formed over an angle of the opening angle Θ or more with respect to the oscillation point Pl. According to this structure, electromagnetic waves radiated from the oscillation point Pl over the range of the opening angle Θ are reflected by the reflecting film 54. Thus, electromagnetic waves that are not reflected by the reflecting film 54 can be reduced, and an increase in gain can be achieved.

[0308] (1-8) The reflecting film 54 is in a parabolic antenna shape. According to this structure, electromagnetic waves can be appropriately reflected in one direction.

[0309] (1-9) The reflecting film 54 is disposed in a manner that a focal point of the reflecting film 54 is located at the oscillation point Pl. According to this structure, electromagnetic waves generated from the oscillation point Pl are guided in one direction by the reflecting film 54. Thus, electromagnetic waves that are not reflected in one direction can be reduced by the reflecting film 54, and an increase in gain can be achieved.

[0310] (1-10) The reflecting film 54 is disposed at a position corresponding to the frequency of the electromagnetic wave generated from the terahertz element 20 in a manner that the electromagnetic wave resonates. As one example, the vertical distance from the oscillation point Pl to the reflecting film 54, that is, the prescribed distance zl, is set in a manner that satisfies the resonance condition of the electromagnetic wave, for example, (λ A / 4) + ((λ A / 2) x N). According to this structure, it is possible to achieve an increase in the gain of the terahertz device 10.

[0311] (1-11) The reflecting film 54 is in an electrically floating state. According to this structure, it is possible to suppress an undesirable condition in which the electromagnetic wave is absorbed by the reflecting film 54.

[0312] (1-12) The antenna substrate 50 is formed of an insulating material. According to this structure, it is possible to suppress the reflecting film 54 from being electrically connected to any component via the antenna substrate 50.

[0313] (1-13) The mounting board 11 as the base material has a mounting main surface 12 on which the terahertz element 20 is mounted. The antenna substrate 50 includes a substrate main surface 50a opposite to the mounting main surface 12, and a recessed portion 52 recessed from the substrate main surface 50a and having the antenna surface 53. The terahertz element 20 and the reflecting film 54 are disposed in an accommodation space Al divided by the mounting main surface 12 and the antenna surface 53. According to this structure, it is possible to reduce the influence on the terahertz element 20 and the reflecting film 54 from the outside.

[0314] (1-14) The reflecting film 54 is formed on the antenna surface 53, and is not formed on the substrate main surface 50a. According to this structure, it is possible to avoid the electromagnetic wave from being reflected by the reflecting film 54 formed on the substrate main surface 50a. Thereby, it is possible to suppress an undesirable condition such as generation of a standing wave caused by an unnecessary reflected wave.

[0315] (1-15) The lead frame 60 as an electrically conductive component is provided on the mounting main surface 12. The antenna substrate 50 is joined to the lead frame 60 via a joining layer 90. The joining layer 90 is formed of an insulating material, and is present between the reflecting film 54 and the lead frame 60. According to this structure, the reflecting film 54 and the lead frame 60 are restricted from contacting each other by the joining layer 90. Thereby, it is possible to suppress the reflecting film 54 from being electrically connected to the lead frame 60.

[0316] (1-16) The opening portion 80 overlapping at least a part of the reflecting film 54 in the z-direction is formed in the lead frame 60. According to this structure, the electromagnetic wave reflected by the reflecting film 54 is output via the opening portion 80. Thereby, it is possible to suppress the electromagnetic wave from being blocked by the lead frame 60.

[0317] (1-17) The lead frame 60 has a first lead portion 61 and a second lead portion 71 which are disposed opposite to each other with a gap 81 therebetween. According to this structure, the insulation of the two lead portions 61, 71 can be ensured, and the blocking of electromagnetic waves by the lead frame 60 can be suppressed.

[0318] (1-18) The opening portion 80 is formed in the portion of the first lead portion 61 which overlaps the reflective film 54 in the z direction, and has a first partial opening portion 63 which communicates with the gap 81. The opening portion 80 is formed in the portion of the second lead portion 71 which overlaps the reflective film 54 in the z direction, and has a second partial opening portion 73 which communicates with the gap 81. According to this structure, the blocking of electromagnetic waves by the lead frame 60 can be further suppressed.

[0319] (1-19) The first lead portion 61 has a first connecting portion 65 for electrically connecting with the terahertz element 20. The first connecting portion 65 protrudes from a first inner wall surface 64 which is an inner wall surface of the first partial opening portion 63, toward the terahertz element 20, and overlaps the reflective film 54 in the z direction. The second lead portion 71 has a second connecting portion 75 for electrically connecting with the terahertz element 20. The second connecting portion 75 protrudes from a second inner wall surface 74 which is an inner wall surface of the second partial opening portion 73, toward the terahertz element 20, and overlaps the reflective film 54 in the z direction. According to this structure, the blocking of electromagnetic waves based on the lead frame 60 can be suppressed, and the terahertz element 20 can be electrically connected with the two lead portions 61, 71.

[0320] (1-20) The terahertz device 10 includes a first wire W1 which connects the first pad 33b formed in the terahertz element 20 with the first connecting portion 65, and a second wire W2 which connects the second pad 34b formed in the terahertz element 20 with the second connecting portion 75. The protruding dimension of the first connecting portion 65 from the first inner wall surface 64 is shorter than the length of the first wire W1 in the z direction. According to this structure, the condition that electromagnetic waves are blocked by the first connecting portion 65 can be suppressed in accordance with the amount by which the protruding dimension of the first connecting portion 65 is short. Similarly, the protruding dimension of the second connecting portion 75 from the second inner wall surface 74 is shorter than the length of the second wire W2 in the z direction.

[0321] (1-21) The two connecting portions 65, 75 are disposed opposite to each other with the terahertz element 20 therebetween. According to this structure, the two wires W1, W2 are less likely to interfere with each other, and thus the two wires W1, W2 can be suppressed from coming into contact.

[0322] (Alterations of the First Embodiment)

[0323] • As Figure 20As shown, the terahertz device 10 may also include a reflection-reducing film 120 formed on the mounting back surface 13. The reflection-reducing film 120 may also be referred to as an antireflection film or an AR coating film.

[0324] For example, reflection-reducing film 120 is formed on at least a portion of the portion of mounting back surface 13 that overlaps with lead frame 60 when viewed in the z-direction. As one example, reflection-reducing film 120 is formed on the entire portion of mounting back surface 13 that overlaps with lead frame 60 when viewed in the z-direction. This suppresses the generation of standing waves caused by electromagnetic waves reflected from lead frame 60. The specific structure of reflection-reducing film 120 is arbitrary, as long as it can at least reduce reflection of electromagnetic waves in the terahertz band.

[0325] (Second embodiment)

[0326] like Figure 21 As shown, the terahertz device 10 of this embodiment includes protection diodes 131 and 132 as an example of a specific element electrically connected to the terahertz element 20. The protection diodes 131 and 132 are electrically connected to the terahertz element 20 and, in this embodiment, are connected in parallel with the terahertz element 20. The two protection diodes 131 and 132 are connected in opposite directions relative to the terahertz element 20. In addition to conventional diodes, the protection diodes 131 and 132 may also be Zener diodes, Schottky diodes, or light-emitting diodes.

[0327] Furthermore, the specific element is not limited to the protection diodes 131 and 132 and may also be a control IC (e.g., an ASIC). For example, the control IC may be a component that detects and amplifies the current flowing through the terahertz element 20, supplies power to the terahertz element 20, or processes signals. Furthermore, the specific element and the terahertz element 20 may be connected in any manner, and may be connected in series, for example.

[0328] like Figure 22 and Figure 23 As shown, the two protection diodes 131 and 132 are disposed opposite to each other with the terahertz element 20 interposed therebetween. The two protection diodes 131 and 132 are mounted on the lead frame 60 .

[0329] Specifically, the first protection diode 131 is disposed on the first lead portion 61 in a state electrically connected to the first lead portion 61. The first protection diode 131 is disposed, for example, near the first partial opening 63 in the first lead portion 61. In this embodiment, the first protection diode 131 is disposed in a region surrounded by the first inner wall surface 64, the first lead-facing surface 62, and the end surface of the first lead portion 61 in the y direction.

[0330] Furthermore, the first protection diode 131 is electrically connected to the second lead portion 71 via the first diode wire W3 , thereby electrically connecting the first protection diode 131 to the two electrodes 94 , 101 .

[0331] The first diode wire W3 is bonded to the second lead portion 71 at a position close to the first protection diode 131, that is, in a region surrounded by the second inner wall surface 74, the second lead facing surface 72, and the y-direction end surface of the second lead portion 71. This shortens the length of the first diode wire W3.

[0332] Similarly, the second protection diode 132 is disposed on the second lead portion 71 in a state electrically connected to the second lead portion 71. The second protection diode 132 is disposed, for example, near the second partial opening 73 in the second lead portion 71. In the present embodiment, the second protection diode 132 is disposed in a region surrounded by the second inner wall surface 74, the second lead-facing surface 72, and the end surface of the second lead portion 71 in the y direction.

[0333] Furthermore, the second protection diode 132 is electrically connected to the first lead portion 61 via the second diode wire W4 , thereby electrically connecting the second protection diode 132 to the two electrodes 94 , 101 .

[0334] The second diode wire W4 is bonded to a portion of the first lead portion 61 near the second protection diode 132, that is, to a region surrounded by the first inner wall surface 64, the first lead facing surface 62, and the y-direction end surface of the first lead portion 61. This shortens the length of the second diode wire W4.

[0335] like Figure 23 As shown, the antenna base 50 of this embodiment has receiving recesses 141 and 142 recessed from the base main surface 50a, and the protection diodes 131 and 132 are received in the receiving recesses 141 and 142. The receiving recesses 141 and 142 are formed around the recess 52 and are not connected to the recess 52. In other words, the receiving recesses 141 and 142 can be said to be recesses provided separately from the recess 52 for receiving specific components. In addition, as shown in FIG. Figure 23 As shown, the bonding layer 90 is not formed in the portions corresponding to the receiving recesses 141 and 142 .

[0336] According to the present embodiment described in detail above, the following effects are achieved.

[0337] (2-1) The terahertz device 10 includes protection diodes 131 and 132 connected in parallel with the terahertz element 20. This configuration allows current to flow through the protection diodes 131 and 132 when a high voltage is applied to both ends of the terahertz element 20 due to static electricity, for example. This prevents excessive current from flowing through the terahertz element 20, thereby protecting the terahertz element 20.

[0338] (2-2) The two protection diodes 131 and 132 are connected in opposite directions relative to the terahertz element 20. According to this structure, the terahertz element 20 can be protected even when a high voltage is generated in either direction.

[0339] (2-3) The antenna base 50 has the housing recesses 141 and 142 recessed from the base main surface 50a, and the protection diodes 131 and 132 are housed in the housing recesses 141 and 142. This configuration can suppress the increase in size of the terahertz device 10 due to the provision of the protection diodes 131 and 132.

[0340] (Change Example)

[0341] The terahertz device 10 of each embodiment can be modified, for example, as follows. The following modifications can be combined with each other as long as no technical conflicts arise. Furthermore, for ease of explanation, the following modifications are primarily based on the first embodiment; however, the modifications can also be applied to other embodiments as long as no technical conflicts arise.

[0342] ·like Figure 24 As shown, the terahertz device 10 has a spacer 200 provided separately from the bonding layer 90 to insulate the reflective film 54 from the lead frame 60. The spacer 200 has insulating properties. The spacer 200 exists between the reflective film 54 and the lead frame 60. Figure 24 In the embodiment, the spacer 200 is present between the lead frame 60 and the bonding layer 90 . However, the present invention is not limited thereto, and the spacer 200 may also be provided between the antenna base 50 and the bonding layer 90 .

[0343] According to this structure, the contact between the reflective film 54 and the lead frame 60 can be restricted by the spacer 200 and the bonding layer 90. Thus, the contact between the reflective film 54 and the lead frame 60 can be further suppressed.

[0344] ·like Figure 25As shown, the first connection portion 65 and the second connection portion 75 can extend to the vicinity of the terahertz element 20. For example, the front end of the first connection portion 65 can be arranged closer to the terahertz element 20 than the first inner wall surface 64, and the front end of the second connection portion 75 can be arranged closer to the terahertz element 20 than the second inner wall surface 74. In other words, the protruding size of the two connection portions 65 and 75 is larger than 1 / 4 of the opening width of the reflective film 54.

[0345] Furthermore, as viewed in the z-direction, the length of the first conductive wire W1 is shorter than the protrusion of the first connecting portion 65 from the first inner wall surface 64. Similarly, the length of the second conductive wire W2 is shorter than the protrusion of the second connecting portion 75 from the second inner wall surface 74. This configuration allows the lengths of the conductive wires W1 and W2 to be shortened, thereby suppressing any reduction in responsiveness due to the conductive wires W1 and W2.

[0346] ·like Figure 26 As shown in FIG. 1 , the first connection portion 65 and the second connection portion 75 may be arranged in parallel. This structure can improve the responsiveness of the terahertz device 10 .

[0347] The first connection portion 65 and the second connection portion 75 may not be formed.

[0348] ·like Figure 27 and Figure 28 As shown, a lead frame 60 can also be used as a substrate for mounting the terahertz element 20. Specifically, the lead frame 60 can also include: a mounting base 210 for mounting the terahertz element 20; a first connection portion 211 connected to the mounting base 210; and a second connection portion 212 insulated from the first connection portion 211. The first connection portion 211 is electrically connected to the first pad 33b via a first wire W1. The second connection portion 212 is electrically connected to the second pad 34b via a second wire W2.

[0349] In addition, the lead frame 60 may include a first bent portion 213 extending from the first connection portion 211 along the outer side of the opening edge of the recess 52 , and a second bent portion 214 extending from the second connection portion 212 along the outer side of the opening edge of the recess 52 .

[0350] In addition, in this modification example, Figure 28 As shown, the terahertz device 10 may include a cover member 215 that covers the mounting base 210 and the two connecting portions 211 and 212 from above. The cover member 215 may be formed of a material that transmits electromagnetic waves, such as a dielectric body.

[0351] ·like Figure 29As shown, the recess 52 can have a flared surface 221 that is flared more than the antenna surface 53; and a step surface 222 formed between the antenna surface 53 and the flared surface 221. The step surface 222 is a surface that intersects the z direction. In this configuration, the reflecting film 223 can be formed over the antenna surface 53 and the step surface 222. In this case, since the reflecting film 223 is apart from the lead frame 60 in the z direction, contact between the two can be suppressed.

[0352] • As shown, the reflecting film 224 can also be a configuration formed over a portion of the antenna surface 53. For example, the reflecting film 224 can be formed in a portion below the oscillation point Pl. Also, the reflecting film 224 can be formed over an angle that is less than the opening angle Θ with respect to the oscillation point Pl. The reflecting film need only be able to reflect at least a portion of the electromagnetic waves generated by the terahertz element 20 in one direction. Figure 30

[0353] • The shape of the reflecting film can be changed as appropriate. For example, the reflecting film is not limited to one film, but can also be composed of a plurality of separate portions. For example, the reflecting film can be formed with slits, or can be formed with holes.

[0354] • As shown, the antenna base 50 can be a configuration disposed on the mounting back surface 13 side. In this case, since the mounting plate 11 is interposed between the lead frame 60 and the reflecting film 54, contact between the reflecting film 54 and the lead frame 60 can be avoided. However, if it is considered that the terahertz element 20 can be housed within the housing space Al, it is preferable that the antenna base 50 be disposed on the mounting main surface 12 side. Figure 31 • As shown, the two lead opposing surfaces 62, 72 can be inclined with respect to the y direction. In this case, the gap 81 extends obliquely with respect to the y direction.

[0355] Figure 32 • As shown, the two lead opposing surfaces 62, 72 can be inclined with respect to the y direction. In this case, the gap 81 extends obliquely with respect to the y direction.

[0356] In this configuration, as in the case where the protection diodes 131, 132 are disposed as in the second embodiment, at least a portion of the first protection diode 131 can be disposed between the first inner wall surface 64 and the first lead opposing surface 62. Likewise, at least a portion of the second protection diode 132 can be disposed between the second inner wall surface 74 and the second lead opposing surface 72.

[0357] • As shown, the terahertz element 20 can also be disposed at a position offset from the center point P2 of the reflecting film 54 in the oscillation point Pl as viewed from above. That is, the focal point of the reflecting film 54 can also be different from the oscillation point Pl. Figure 33 • As shown, the terahertz element 20 can also be disposed at a position offset from the center point P2 of the reflecting film 54 in the oscillation point Pl as viewed from above. That is, the focal point of the reflecting film 54 can also be different from the oscillation point Pl.

[0358] Figure 34 ​​​As shown, the terahertz device 10 can also be a double mirror type having a reflection portion 300 provided separately from the reflection film 54.

[0359] Specifically, the terahertz device 10 has the reflection portion 300 provided separately from the reflection film 54. More specifically, a reflection protrusion 301 is formed on the mounting surface 12, and the reflection portion 300 is a metal film formed on the surface of the reflection protrusion 301. The reflection portion 300 is curved so as to be convex toward the reflection film 54 in correspondence with the reflection protrusion 301 being curved so as to be convex toward the reflection film 54. The reflection portion 300 is opposed to the reflection film 54 in the radial direction, and the electromagnetic wave reflected by the reflection portion 300 is radiated toward the reflection film 54.

[0360] The terahertz element 20 of the present modification is disposed at a position opposed to the reflection portion 300. In other words, the mounting plate 11 serving as the substrate having the reflection portion 300 is disposed at a position opposed to the terahertz element 20.

[0361] The terahertz device 10 has, for example, mounting posts 302, 303. The mounting posts 302, 303 are formed of, for example, an electrically conductive material. The mounting posts 302, 303 penetrate the antenna substrate 50 and the reflection film 54 from below and enter the housing space Al. The terahertz element 20 is mounted to the mounting posts 302, 303. The terahertz element 20 is electrically connected to the mounting posts 302, 303.

[0362] The terahertz element 20 can be directly joined to the mounting posts 302, 303 or can be joined via an electrically conductive joining material. In addition, an insulating portion (e.g., an insulating coating) can be provided on the side surface of the mounting posts 302, 303 in order to avoid contact between the mounting posts 302, 303 and the reflection film 54. Furthermore, the number of mounting posts 302, 303 is arbitrary in the present modification.

[0363] The terahertz device 10 of the present modification has electrodes 304, 305 electrically connected to the mounting posts 302, 303. The electrodes 304, 305 are formed on the substrate back surface 50b opposite to the substrate surface 50a in the antenna substrate 50 and are joined to the mounting posts 302, 303.

[0364] According to the present modification, an electromagnetic wave is generated by the terahertz element 20 by applying a voltage from the two electrodes 304, 305. This electromagnetic wave is reflected by the reflection portion 300 and further reflected by the reflection film 54 and is radiated upward as one direction. That is, the electromagnetic wave generated by the terahertz element 20 is radiated to the reflection film 54 via the reflection portion 300 and is further reflected by the reflection film 54.

[0365] That is, the reflection part 300 is a component on which the electromagnetic wave generated by the terahertz element 20 is incident and is a component that reflects at least a portion of the electromagnetic wave, and the reflection film 54 is a component on which the electromagnetic wave reflected by the reflection part 300 is incident and is a component that reflects at least a portion of the electromagnetic wave in one direction (upward).

[0366] In this modification, the lead frame 60 and the two wires W1 and W2 are not formed on the mounting plate 11. Furthermore, the reflector 300 may be within the projection of the terahertz element 20 when viewed from above. This can prevent electromagnetic waves from being blocked.

[0367] By the way, if Figure 34 As shown, the through hole 306 formed in the reflective film 54 and penetrating the mounting posts 302 and 303 can be formed larger than the mounting posts 302 and 303 in a manner that the reflective film 54 and the mounting posts 302 and 303 do not contact each other. In addition, the portion of the reflective film 54 between the two mounting posts 302 and 303 can be omitted. That is, the reflective film 54 becomes a ring with the center portion removed when viewed from above. In addition, the reflective portion 300 can be concave relative to the terahertz element 20. Specifically, the reflective portion 300 can also be an antenna shape that is concave in the opposite direction (i.e., upward) to the reflective film 54. That is, the reflective portion 300 can also be a Cassegrain type or a Gregorian type.

[0368] The shape of the antenna base 50 can be changed appropriately. Figure 35 As shown, the antenna base 50 may also have a dome shape with a cut-off corner. Specifically, the antenna base 50 of this modified example has inclined surfaces 311 and 312 formed between the base side surfaces 51a and 51b and the base back surface 50b. The first inclined surface 311 intersects both the first base side surface 51a and the base back surface 50b, while the second inclined surface 312 intersects both the second base side surface 51b and the base back surface 50b.

[0369] In this case, the first electrode 94 is formed over the first base side surface 51 a , the first inclined surface 311 , and the base back surface 50 b , and the second electrode 101 is formed over the second base side surface 51 b , the second inclined surface 312 , and the base back surface 50 b .

[0370] ·like Figure 36 As shown, the inner peripheral end of the bonding layer 90 may be arranged flush with the surface of the reflective film 54. That is, the bonding layer 90 is configured not to protrude inward (ie, toward the terahertz element 20) from the reflective film 54.

[0371] In addition, if Figure 37 and Figure 38As shown, the inner peripheral end of the bonding layer 90 is disposed on the outside (in other words, the substrate side 51 side) of the surface of the reflecting film 54 in the x direction and the y direction. For example, as shown in FIG. 6, the inner peripheral end of the bonding layer 90 is disposed on the outside of the surface of the reflecting film 54 in the x direction and the y direction. In this case, the reflecting film 54 is not necessarily present between the antenna substrate 50 and the lead frame 60. In this case, the reflecting film 54 is separated from the lead frame 60, and thus the contact between the reflecting film 54 and the lead frame 60 can be suppressed. Figure 37 As shown, the inner peripheral end of the bonding layer 90 is disposed at a position on the same plane as the antenna surface 53. In addition, as shown in FIG. 5, the inner peripheral end of the bonding layer 90 is disposed at a position on the same plane as the antenna surface 53. In this case, the reflecting film 54 is not necessarily present between the antenna substrate 50 and the lead frame 60. In this case, the reflecting film 54 is separated from the lead frame 60, and thus the contact between the reflecting film 54 and the lead frame 60 can be suppressed. Figure 38 As shown, the inner peripheral end of the bonding layer 90 can also be disposed on the outside of the antenna surface 53 in the x direction and the y direction. In this case, the reflecting film 54 is not present between the end 54a of the reflecting film 54 and the lead frame 60. That is, the bonding layer 90 is not necessarily present between the reflecting film 54 and the lead frame 60. In this case, the reflecting film 54 is separated from the lead frame 60 in accordance with the amount of the height of the bonding layer 90, and thus the contact between the reflecting film 54 and the lead frame 60 can be suppressed.

[0372] • The terahertz device 10 is mounted in the state of being electrically connected to the wiring pattern 114 using the side electrodes 95, 102. Specifically, a conductive bonding material 115 that connects the side electrodes 95, 102 and the wiring pattern 114 can be provided.

[0373] • The electrodes 94, 101 can be configured using a conductive member other than the lead frame 60.

[0374] • An inclined surface can be provided between the substrate side surfaces 51a, 51b and the substrate main surface 50a. In this case, the inclined surface corresponds to the corner portions of the substrate side surfaces 51a, 51b and the substrate main surface 50a.

[0375] • The terahertz element 20 can be disposed in a manner in which the element back surface 22 faces the reflecting film 54. That is, the reflecting film 54 is not disposed on the element main surface 21 side with respect to the terahertz element 20, but is disposed on the element back surface 22 side.

[0376] • The reflecting film 54 can not be in an electrically floating state.

[0377] • The reflecting film 54 can be formed on the substrate main surface 50a. In this case, for example, a reflection reducing film can be formed at a position opposite to the substrate main surface 50a.

[0378] • The gas present in the accommodation space Al is not limited to air, and can be arbitrarily changed. In addition, it can be a vacuum.

[0379] • The antenna substrate 50 and the lead frame 60 can be unitized using a method other than bonding (adhesion).

[0380] • The shape of the opening portion 80 can be arbitrarily changed, and for example, either of the two-part opening portions 63, 73 can be omitted, or the two-part opening portions 63, 73 can be smaller than the reflecting film 54.

[0381] • The shape of the mounting plate 11 as a base material is arbitrary. For example, the mounting plate 11 can be formed to be thicker than the lead frame 60.

[0382] • The electrodes 94, 101 can also extend from the vicinity of the central portion in the z direction of the terahertz device 10, or can extend from below the central portion. In addition, the side electrodes 95, 102 are not limited to being provided to the first and second base side surfaces 51a, 51b, and can be provided to the third and fourth base side surfaces 51c, 51d.

[0383] In other words, the two electrodes 94, 101 can be provided on both sides in the x direction in the antenna base 50, or can be provided on both sides in the y direction. In addition, the first electrode 94 can be formed across the first and third base side surfaces 51a, 51c. The same applies to the second electrode 101.

[0384] • The specific structure of the terahertz element 20 can be appropriately changed. For example, the positions and sizes of the two pads 33b, 34b can also be changed. In addition, the oscillation point Pl can also be located at a position other than the center.

[0385] • The terahertz element 20 can be a component that receives electromagnetic waves and converts the received electromagnetic waves into electric energy. Specifically, the terahertz element 20, for example, receives electromagnetic waves over a range of the opening angle Θ with respect to the oscillation point Pl. In this case, the oscillation point Pl can be said to be a reception point that performs reception of electromagnetic waves.

[0386] In this structure, the reflection film is a film that reflects the incident electromagnetic waves toward the terahertz element 20 (preferably the reception point). Thereby, the reception intensity of the terahertz device 10 becomes high, and thus it is possible to achieve an increase in gain related to reception.

[0387] Also, the terahertz element 20 can be a component that performs both oscillation and reception of electromagnetic waves. That is, the oscillation point Pl can be a point that performs at least one of oscillation and reception of electromagnetic waves.

[0388] Further, in the case where the terahertz element 20 is an element that receives electromagnetic waves, the reflection portion 300 in the above-described modification example reflects electromagnetic waves reflected by the reflection film 54 toward the terahertz element 20. According to this structure, the electromagnetic waves reflected by the reflection film 54 are irradiated to the terahertz element 20 via the reflection portion 300. That is, the reflection film 54 is a film that reflects at least a part of the incident electromagnetic waves toward the reflection portion 300, and the reflection portion 300 can be said to be a portion that is shot with electromagnetic waves reflected by the reflection film 54, and irradiates at least a part of the electromagnetic waves toward the terahertz element 20.

[0389] (Third Embodiment)

[0390] Figures 39-45The terahertz device 10 of the third embodiment of the present invention includes a mounting plate 11 as a base material, a terahertz element 20 generating electromagnetic waves, an antenna substrate 50 , a reflective film 54 , electrodes, and a lead frame 60 as a conductive member.

[0391] Figure 39 and Figure 40 It is a perspective view of the terahertz device 10 . Figure 41 This is a top view of the terahertz device 10 . Figure 42 yes Figure 41 4-4 line end view. Figure 43 It is a bottom view of the terahertz device 10 with the antenna base 50 removed, and a front view of the terahertz element 20 and the lead frame 60 .

[0392] The mounting plate 11 is formed of a material that transmits the electromagnetic waves generated by the terahertz element 20. In this embodiment, the mounting plate 11 is formed of a dielectric body, for example, a synthetic resin such as epoxy resin or a single crystal intrinsic semiconductor such as Si. Examples of epoxy resins include glass epoxy resin. However, the material of the mounting plate 11 is not limited to this and can be any material, for example, Teflon (registered trademark) or glass. The mounting plate 11 has insulating properties.

[0393] The mounting plate 11 is, for example, in the shape of a rectangular plate. For ease of explanation, the thickness direction of the mounting plate 11 is referred to as the z direction. Furthermore, two directions perpendicular to the z direction and perpendicular to each other are referred to as the x direction and the y direction.

[0394] like Figure 41 and Figure 42 As shown, the mounting plate 11 has a mounting main surface 12 and a mounting back surface 13 as a plate surface intersecting the thickness direction of the mounting plate 11. The mounting main surface 12 and the mounting back surface 13 are planes of rectangular shape. The mounting main surface 12 and the mounting back surface 13 extend in the x-direction and the y-direction and are separated in the z-direction. The shapes of the mounting main surface 12 and the mounting back surface 13 are not limited to rectangular shapes, and may also be circular, elliptical or polygonal. For the convenience of explanation, in this embodiment, the direction away from the mounting back surface 13 in the z-direction is referred to as "above", and the direction away from the mounting main surface 12 in the z-direction is referred to as "below".

[0395] like Figure 43As shown, the mounting plate 11 of this embodiment has a pair of first plate side surfaces 14 serving as end surfaces in the x-direction, and a pair of second plate side surfaces 15 serving as end surfaces in the y-direction. The pair of first plate side surfaces 14 intersect the x-direction and, in this embodiment, are perpendicular to the x-direction. The pair of second plate side surfaces 15 intersect the y-direction and, in this embodiment, are perpendicular to the y-direction. The first plate side surfaces 14 and the second plate side surfaces 15 are perpendicular to each other.

[0396] The terahertz element 20 converts electromagnetic waves in the terahertz band into electrical energy. The term "electromagnetic waves" encompasses either or both light and radio waves. The terahertz element 20 converts input electrical energy into electromagnetic waves in the terahertz band. This generates electromagnetic waves (terahertz waves). The frequency of the electromagnetic waves generated by the terahertz element 20 ranges from 0.1 Thz to 10 Thz, for example.

[0397] like Figure 43 As shown, the terahertz element 20 is rectangular and plate-shaped when viewed from the z-direction (hereinafter also referred to as "top view"). In this embodiment, the terahertz element 20 is square when viewed from above. Furthermore, the top view shape of the terahertz element 20 is not limited to a rectangle and may also be a circle, an ellipse, or a polygon.

[0398] The terahertz element 20 has an element principal surface 21 and an element back surface 22. The element principal surface 21 and the element back surface 22 intersect with the z-direction and, in this embodiment, are orthogonal to the z-direction. The element principal surface 21 and the element back surface 22 are rectangular, for example, square, when viewed from the z-direction. However, the shapes of the element principal surface 21 and the element back surface 22 are not limited to these and are arbitrary.

[0399] like Figure 42 As shown, the terahertz element 20 of this embodiment is mounted on the mounting board 11 with the element back surface 22 in contact with or facing the mounting main surface 12 via an intermediate layer. In other words, the mounting board 11 is a component for mounting the terahertz element 20. The terahertz element 20 is mounted on the mounting board 11.

[0400] The terahertz element 20 has a pair of first element side surfaces 23 as end surfaces in the x-direction, and a pair of second element side surfaces 24 as end surfaces in the y-direction. The pair of first element side surfaces 23 intersect the x-direction and, in this embodiment, are orthogonal to the x-direction. The pair of second element side surfaces 24 intersect the y-direction and, in this embodiment, are orthogonal to the y-direction. The first element side surfaces 23 and the second element side surfaces 24 are orthogonal to each other.

[0401] Figure 44 and Figure 45 An example of a detailed structure of the terahertz element 20 is shown.Figure 44 is an example of a schematic view of a cross section of the terahertz element 20. Figure 45 is Figure 44 is a partial enlarged view of

[0402] As shown in Figure 44 and Figure 45 , the terahertz element 20 includes an element substrate 31, an active element 32, a first conductive layer 33, and a second conductive layer 34.

[0403] The element substrate 31 is composed of a semiconductor and has semi-insulating properties. The semiconductor that constitutes the element substrate 31 is, for example, InP (indium phosphide), and can also be a semiconductor other than InP. In the case where the element substrate 31 is InP, its refractive index (absolute refractive index) is approximately 3.4. In the present embodiment, the element substrate 31 is in the form of a rectangular plate, for example, in the form of a square when viewed from above. The element front surface 21 and the element back surface 22 are the front surface and the back surface of the element substrate 31, and the two element side surfaces 23, 24 are the side surfaces of the element substrate 31.

[0404] The active element 32 performs conversion between electromagnetic waves of the terahertz band and electric energy. The active element 32 is formed on the element substrate 31. The active element 32 is typically a resonant tunneling diode (RTD).

[0405] As the active element 32, for example, a tunnel injection transit time (TUNNETT) diode, an impact ionization avalanche transit time (IMPATT) diode, a GaAs-based field effect transistor (FET), a GaN-based FET, a high electron mobility transistor (HEMT), or a heterojunction bipolar transistor (HBT) can be used.

[0406] An example for realizing the active element 32 will be described.

[0407] A semiconductor layer 41a is formed on the element substrate 31. The semiconductor layer 41a is formed of, for example, GaInAs. The semiconductor layer 41a is doped with an n-type impurity at a high concentration.

[0408] A GaInAs layer 42a is layered on the semiconductor layer 41a. The GaInAs layer 42a is doped with an n-type impurity. For example, the impurity concentration of the GaInAs layer 42a is lower than the impurity concentration of the semiconductor layer 41a.

[0409] A GaInAs layer 43a is stacked on the GaInAs layer 42a. The GaInAs layer 43a is not doped with impurities.

[0410] An AlAs layer 44a is stacked on the GaInAs layer 43a, an InGaAs layer 45 is stacked on the AlAs layer 44a, and an AlAs layer 44b is stacked on the InGaAs layer 45. The AlAs layer 44a, the InGaAs layer 45, and the AlAs layer 44b constitute an RTD portion.

[0411] An undoped GaInAs layer 43b is stacked on AlAs layer 44b. A GaInAs layer 42b doped with n-type impurities is stacked on GaInAs layer 43b. A GaInAs layer 41b is stacked on GaInAs layer 42b. GaInAs layer 41b is doped with a high concentration of n-type impurities. For example, the impurity concentration in GaInAs layer 41b is higher than that in GaInAs layer 42b.

[0412] The specific structure of the active element 32 can be anything as long as it is an element capable of generating (or receiving, or both) electromagnetic waves. In other words, the active element 32 can be said to be an element that excites electromagnetic waves in the terahertz band.

[0413] like Figure 43 As shown, the terahertz element 20 has an oscillation point P1 where electromagnetic waves oscillate. Oscillation point P1 is formed on the element main surface 21. The element main surface 21 having oscillation point P1 can also be called the active surface. In addition, oscillation point P1 can also be called the location where the active element 32 is installed.

[0414] The oscillation point P1 (active element 32) of this embodiment is located at the center of the element principal surface 21. However, the position of the oscillation point P1, in other words, the position of the active element 32 relative to the element principal surface 21 is not limited to the center of the element principal surface 21 but may be arbitrary.

[0415] In this embodiment, the first perpendicular distance x1 between the first element side surface 23 and the oscillation point P1 is (λ'InP / 2)+((λ'InP / 2)×N), where N is an integer greater than 0: N=0, 1, 2, 3, . . .

[0416] λ'InP is an effective wavelength of the electromagnetic wave propagating inside the terahertz element 20. When the refractive index of the terahertz element 20 (element substrate 31) is n1, c is the speed of light, and fc is the center frequency of the electromagnetic wave, λ'InP is (1 / n1) x (c / fc). By setting the first vertical distance xl in the above-described manner, the electromagnetic wave oscillating from the terahertz element 20 is free-end reflected at the first element side surface 23. Thus, the terahertz element 20 itself is designed as a resonator (primary resonator) in the terahertz device 10.

[0417] Similarly, the second vertical distance yl of the second element side surface 24 from the oscillation point Pl is (λ'InP / 2) + ((λ'InP / 2) x N), where N is an integer of 0 or more: N = 0, 1, 2, 3,....

[0418] Further, the vertical distances xl, yl can be different values if they are respectively calculated values by the above-described calculation formulae. In addition, in the case where the terahertz element 20 is a rectangular parallelepiped, Figure 43 in the case where the terahertz element 20 is a rectangular parallelepiped, the first vertical distance xl of the first element side surface 23 on the right side from the oscillation point Pl can be different from the first vertical distance xl of the first element side surface 23 on the left side from the oscillation point Pl. Similarly, in the case where the terahertz element 20 is a rectangular parallelepiped, Figure 43 in the case where the terahertz element 20 is a rectangular parallelepiped, the second vertical distance yl of the second element side surface 24 on the upper side from the oscillation point Pl can be different from the second vertical distance yl of the second element side surface 24 on the lower side from the oscillation point Pl.

[0419] The z-direction dimension of the terahertz element 20 can be designed, for example, in correspondence with the frequency of the oscillating electromagnetic wave. Specifically, the z-direction dimension of the terahertz element 20 is an integer multiple of 1 / 2 times (i.e., λ / 2) the wavelength λ of the electromagnetic wave. At the interface of the element substrate 31 and the air, the electromagnetic wave is free-end reflected. Thus, by setting the z-direction dimension of the terahertz element 20 in the above-described manner, it is possible to excite a standing wave with a uniform phase inside the terahertz element 20. Further, the z-direction dimension of the terahertz element 20 is smaller as the frequency of the electromagnetic wave is higher, and is larger as the frequency of the electromagnetic wave is lower.

[0420] Further, the structure of the terahertz element 20 is not limited to the above-described structure. For example, a back surface reflector metal layer can be arranged at the element back surface 22 of the element substrate 31 on the side opposite to the element front surface 21 on which the active element 32 is arranged. In this case, the electromagnetic wave (electromagnetic wave) radiated from the active element 32 is reflected toward this back surface reflector metal layer.

[0421] In the case where the back surface reflector metal layer is provided, at the interface between the element substrate 31 and the back surface reflector metal layer, the electromagnetic wave is reflected at a fixed end, and thus the phase is shifted by π. Thus, in this case, the z-direction dimension of the terahertz element 20, when the wavelength of the electromagnetic wave is λ, can be designed as (λ / 4) + (an integer multiple of λ / 2).

[0422] In the present embodiment, the electromagnetic wave generated from the oscillation point Pl has directivity. As shown in FIG. 6, the electromagnetic wave generated from the oscillation point Pl is radiated in a radiating manner over the range of the opening angle θ. The opening angle θ is, for example, 120° to 180°. However, the opening angle θ is not limited thereto, and can be arbitrary. Figure 42

[0423] The first and second conductive body layers 33 and 34 are formed on the element main surface 21, respectively. The first and second conductive body layers 33 and 34 are insulated from each other. The first and second conductive body layers 33 and 34 each have a stacked structure of metal. The stacked structure of each of the first and second conductive body layers 33 and 34 is, for example, a structure in which Au (gold), Pd (palladium), and Ti (titanium) are stacked. Alternatively, the stacked structure of each of the first and second conductive body layers 33 and 34 is a structure in which Au and Ti are stacked. The first and second conductive body layers 33 and 34 are each formed by a vacuum evaporation method or a sputtering method, or the like.

[0424] As shown in FIG. 7, in the present embodiment, a portion of the first conductive body layer 33 and a portion of the second conductive body layer 34 are provided on both sides of the active element 32 in the x-direction. The first conductive body layer 33 has a first connection region 33a which overlaps the active element 32 in the z-direction. The first connection region 33a is positioned on the GaInAs layer 41b, and is in contact with the GaInAs layer 41b. Figure 44

[0425] In addition, the semiconductor layer 41a extends further than the other layers such as the GaInAs layer 42a in the x-direction from the second conductive body layer 34. The second conductive body layer 34 has a second connection region 34a which is stacked in a portion of the semiconductor layer 41a in which the GaInAs layer 42a and the like are not stacked. Thus, the active element 32 is in conduction with the first and second conductive body layers 33 and 34. Further, the second connection region 34a is apart from the other layers such as the GaInAs layer 42a in the x-direction.

[0426] Although not shown, unlike FIG. 7, a GaInAs layer doped with an n-type impurity at a high concentration can also be present between the GaInAs layer 41b and the first connection region 33a. Thus, the contact of the first conductive body layer 33 with the GaInAs layer 41b becomes good. Figure 45

[0427] As shown in FIG. 8, the terahertz element 20 according to the present embodiment has a structure in which the GaInAs layer 41b is not present between the first connection region 33a and the GaInAs layer 42a.​​​Figure 43 As shown, a part of the first conductor layer 33 and a part of the second conductor layer 34 constitute a dipole antenna. That is, the terahertz element 20 integrates the antenna on the element main surface 21 side by a part of the first conductor layer 33 and a part of the second conductor layer 34. Further, it is not limited to the dipole antenna, but can be other antennas such as a slot antenna, a bowtie antenna, or a loop antenna. In addition, there can be no antenna.

[0428] Further, the terahertz element 20 of the present embodiment has a MIM (Metal Insulator Metal) reflector 35. The MIM reflector 35 is constituted by sandwiching an insulator in the z direction by a part of the first conductor layer 33 and a part of the second conductor layer 34. The MIM reflector 35 is a member that high-frequency short-circuits a part of the first conductor layer 33 and a part of the second conductor layer 34. The MIM reflector 35 can reflect electromagnetic waves of high frequency. However, the MIM reflector 35 is not necessarily provided, and the MIM reflector 35 can be omitted.

[0429] As shown, Figure 43 The first conductor layer 33 has a first pad 33b, and the second conductor layer 34 has a second pad 34b. The first pad 33b and the second pad 34b are apart in the x direction and insulated from each other.

[0430] As shown, Figure 40 The antenna base 50 is, for example, a rectangular parallelepiped shape as a whole. The antenna base 50 is formed of, for example, an insulating material. Specifically, the antenna base 50 is formed of a dielectric body, for example, a synthetic resin such as an epoxy resin. As the epoxy resin, for example, there is a glass epoxy resin. However, the material of the antenna base 50 is not limited thereto, and can be arbitrary, for example, Si, Teflon, glass, or the like.

[0431] The antenna base 50 is provided on the mounting main surface 12 side opposite to the mounting back surface 13 side with respect to the mounting plate 11. The antenna base 50 is provided at a position opposite to the mounting plate 11. Specifically, the antenna base 50 is opposite to the mounting plate 11 in the z direction via the lead frame 60. The z direction can also be said to be the direction in which the antenna base 50 and the mounting plate 11 are opposite to each other.

[0432] The antenna base 50 has a base main surface 50a opposite to the mounting main surface 12, a base back surface 50b on the side opposite to the base main surface 50a, and a base side surface 51.

[0433] The base main surface 50a and the base back surface 50b are surfaces that intersect with respect to the z direction, and are orthogonal to the z direction in the present embodiment. The base main surface 50a and the base back surface 50b are, for example, rectangular shapes (for example, square shapes). The base back surface 50b constitutes the bottom surface of the terahertz device 10.

[0434] In this embodiment, the substrate side surface 51 is a side-facing surface in the terahertz device 10 (antenna substrate 50). The substrate side surface 51 can be considered an end surface of the antenna substrate 50 that is perpendicular to the relative direction of the substrate principal surface 50a and the substrate back surface 50b. The substrate side surface 51 connects the substrate principal surface 50a and the substrate back surface 50b.

[0435] In this embodiment, four base side surfaces 51 are provided. Specifically, the base side surfaces 51 include a first base side surface 51a and a second base side surface 51b, which serve as the two end surfaces of the antenna base 50 in the x-direction, and a third base side surface 51c and a fourth base side surface 51d, which serve as the two end surfaces of the antenna base 50 in the y-direction. The first base side surface 51a and the second base side surface 51b intersect the x-direction and, in this embodiment, are orthogonal to the x-direction. The third base side surface 51c and the fourth base side surface 51d intersect the y-direction and, in this embodiment, are orthogonal to the y-direction. The first base side surface 51a and the second base side surface 51b are orthogonal to the third base side surface 51c and the fourth base side surface 51d.

[0436] The antenna base 50 has a recessed portion 52 formed therein, recessed relative to the base principal surface 50a in a direction away from the mounting principal surface 12. The recessed portion 52 is recessed downward, away from the base principal surface 50a and the mounting principal surface 12. In this embodiment, the recessed portion 52 is formed as a whole in a hemispherical shape. The recessed portion 52 is filled with air.

[0437] The recess 52 opens upward. The opening of the recess 52 is circular when viewed from the z direction. The opening of the recess 52 is closed by the mounting plate 11. In this embodiment, the terahertz element 20 is accommodated in the recess 52.

[0438] Recess 52 has an antenna surface 53. Antenna surface 53 is, for example, a curved surface that is convex downward. Antenna surface 53 is formed to correspond to the shape of the antenna. For example, antenna surface 53 is curved to form a parabolic antenna. Antenna surface 53 is circular when viewed from above.

[0439] like Figure 42 As shown, a reflective film 54 is formed on the antenna surface 53. The reflective film 54 is formed of a material that reflects electromagnetic waves generated by the terahertz element 20, for example, a metal such as Cu. In this embodiment, the reflective film 54 is formed over the entire antenna surface 53. On the other hand, the reflective film 54 is not formed on the base main surface 50a.

[0440] The reflection film 54 is a member that reflects at least a part of the electromagnetic wave from the terahertz element 20 in one direction. In the present embodiment, the reflection film 54 reflects the electromagnetic wave from the terahertz element 20 in the z direction (specifically, upward). In other words, the reflection film 54 can be said to be a member that directs the electromagnetic wave radiating over a range of the opening angle θ in one direction.

[0441] Specifically, the reflection film 54 is in an antenna shape. In the present embodiment, the reflection film 54 formed on the antenna face 53 naturally becomes an antenna shape because the antenna face 53 is curved in correspondence with the antenna shape. In the present embodiment, the reflection film 54 is in a parabolic antenna shape. In other words, the reflection film 54 is a parabolic mirror. The reflection film 54 is in a circular shape as viewed in the z direction.

[0442] The reflection film 54 is opposite to the mounting plate 11 in the z direction. In other words, the mounting plate 11 is disposed at a position opposite to the reflection film 54, that is, above the reflection film 54 in the present embodiment. Therefore, the electromagnetic wave reflected by the reflection film 54 is transmitted through the mounting plate 11 to be radiated upward.

[0443] The reflection film 54 is not disposed on the element back face 22 but on the element main face 21 side where the oscillation point Pl exists, opposite to the terahertz element 20 (the element main face 21 in the present embodiment). The reflection film 54 is disposed, for example, in such a manner that a focal point of the reflection film 54 becomes the oscillation point Pl. In the present embodiment, a center point P2 of the reflection film 54 as viewed in the z direction coincides with the oscillation point Pl. In the present embodiment, the center point P2 is the center of the circular reflection film 54 as viewed in the z direction.

[0444] Further, when a vertical distance from the oscillation point Pl to the reflection film 54 is set as a prescribed distance zl, a coordinate in the z direction of the reflection film 54 is set as Z, and a position in the x direction of the reflection film 54 is set as X, the antenna face 53 can be curved in such a manner that Z = (1 / (4z1))X is satisfied. 2 However, the curved shape of the antenna face 53 is not limited to this but is arbitrary.

[0445] The z direction can be said to be a direction opposite to the reflection film 54 and the terahertz element 20 (the element main face 21), and can be said to be an output direction of the electromagnetic wave of the terahertz device 10. Further, the z direction can be said to be a direction opposite to the center point P2 of the reflection film 54 and the oscillation point Pl, and the prescribed distance zl can be said to be a distance between the oscillation point Pl and the center point P2.

[0446] Further, the reflection film 54 is disposed at a position corresponding to the frequency of the electromagnetic wave generated from the terahertz element 20 in such a manner that resonance of the electromagnetic wave occurs. Specifically, the prescribed distance zl is set so as to satisfy the resonance condition of the electromagnetic wave generated from the terahertz element 20, for example, zl = λ' / 4 (λ' is the wavelength of the electromagnetic wave generated from the terahertz element 20).A / 4)+((λ' A / 2)×N)(where N is an integer greater than 0). A is (1 / n A )(c / fc)(c: speed of light, fc: center frequency of oscillation). n A is the refractive index of the object between the oscillation point P1 and the reflective film 54. For example, if there is air between the two, n A Fc is “1.” Fc can be regarded as the target frequency of the terahertz element 20 , or as the frequency at which the maximum output frequency is obtained among the electromagnetic waves generated by the terahertz element 20 .

[0447] The distance from end to end of the reflective film 54 in the x-direction or y-direction, as viewed in the z-direction, is referred to as the opening width of the reflective film 54. In this embodiment, the reflective film 54 is formed over the entire antenna surface 53, so the opening width of the reflective film 54 matches the opening width of the recess 52. The opening width of the recess 52 can also be referred to as the opening diameter of the circular recess 52.

[0448] For example, the reflective film 54 is formed over an angle greater than or equal to the opening angle θ relative to the oscillation point P1. Specifically, the antenna surface 53 is formed over an angle greater than or equal to the opening angle θ, centered around the oscillation point P1. Furthermore, as described above, the reflective film 54 of this embodiment is formed over the entire antenna surface 53. In this embodiment, the angle at which the reflective film 54 is formed relative to the oscillation point P1 is greater than 180°. Therefore, in this embodiment, all electromagnetic waves irradiated from the oscillation point P1 within the range of the opening angle θ are reflected by the reflective film 54.

[0449] In this embodiment, the z-direction length of the antenna base 50 is greater than the z-direction length of the mounting board 11, that is, the thickness of the mounting board 11. Furthermore, the x-direction length of the antenna base 50 is set to be the same as the x-direction length of the mounting board 11. The y-direction length of the antenna base 50 is set to be the same as the y-direction length of the mounting board 11. However, the length relationship between the antenna base 50 and the mounting board 11 is arbitrary.

[0450] like Figure 42 and Figure 43 As shown, the lead frame 60 is mounted on the mounting main surface 12 of the mounting board 11. The lead frame 60 and the mounting board 11 are closely bonded and fixed so as not to be misaligned.

[0451] The lead frame 60 is, for example, a rectangular plate with its thickness extending in the z direction. The lead frame 60 of this embodiment is formed thicker than the mounting board 11. In other words, the mounting board 11 of this embodiment is formed thinner than the lead frame 60.

[0452] The lead frame 60 has a first lead portion 61 and a second lead portion 71 insulated from each other. The first lead portion 61 and the second lead portion 71 are, for example, oppositely arranged apart in the x direction, have first lead opposing surfaces 62 and second lead opposing surfaces 72 oppositely arranged apart in the x direction from each other. The two lead opposing surfaces 62, 72 of the present embodiment are orthogonal with respect to the x direction. In the present embodiment, the first lead portion 61 and the second lead portion 71 correspond to the "first conductive portion" and the "second conductive portion".

[0453] The first lead portion 61 and the second lead portion 71 protrude more laterally than the mounting plate 11, in the present embodiment, in the x direction as viewed in the z direction. On the other hand, the lengths of the two lead portions 61, 71 in the y direction are set to be shorter than the length of the mounting plate 11 in the y direction, for example, to be the same as the length of the antenna base 50 in the y direction. Thus, the lead frame 60 of the present embodiment is less likely to protrude in the y direction with respect to the mounting plate 11.

[0454] The lead frame 60 is formed so as to avoid the reflective film 54 (the recess 52) in a non-overlapping manner as viewed in the z direction. Specifically, the lead frame 60 has an opening portion 80 formed therein so as to overlap at least a portion of the reflective film 54 as viewed in the z direction.

[0455] The opening portion 80 is composed of, for example, a gap 81 provided between the two lead portions 61, 71, a first partial opening portion 63 formed in the first lead portion 61, and a second partial opening portion 73 formed in the second lead portion 71.

[0456] The gap 81 is slit-shaped extending in the y direction, and includes a space between the two lead opposing surfaces 62, 72 and a space between the two partial opening portions 63, 73.

[0457] The first partial opening portion 63 is formed in a portion of the first lead portion 61 overlapping the reflective film 54 as viewed in the z direction. The second partial opening portion 73 is formed in a portion of the second lead portion 71 overlapping the reflective film 54 as viewed in the z direction.

[0458] The first partial opening portion 63 and the second partial opening portion 73 are through in the z direction, and communicate with the recess 52. The first partial opening portion 63 and the second partial opening portion 73 are oppositely arranged apart in the x direction with the gap 81 therebetween. The two partial opening portions 63, 73 are open in the x direction. The first partial opening portion 63 is open toward the second lead portion 71, and the second partial opening portion 73 is open toward the first lead portion 61. Thus, the two partial opening portions 63, 73 communicate with the gap 81.

[0459] The first and second openings 63 and 73 are each formed into a semicircular shape when viewed in the z-direction. The first and second openings 63 and 73 form a circular hole. The terahertz element 20 can be positioned at the center of the circle formed by the two openings 63 and 73. The diameter of the circle formed by the two openings 63 and 73 can be, for example, equal to or greater than the opening width of the reflective film 54.

[0460] The first lead portion 61 has a first inner wall surface 64 as the inner wall surface of the first partial opening 63. The first inner wall surface 64 is a concave surface that is recessed relative to the first lead-facing surface 62 in a direction away from the second lead-facing surface 72.

[0461] The second lead portion 71 has a second inner wall surface 74 as the inner wall surface of the second partial opening 73. The second inner wall surface 74 is a concave surface that is concave relative to the second lead-facing surface 72 in a direction away from the first lead-facing surface 62.

[0462] The first inner wall surface 64 and the second inner wall surface 74 are curved so as to be convex away from each other. The inner wall surfaces 64 and 74 extend along the end 54a of the reflective film 54, i.e., the outer side of the opening edge of the recess 52, so that the lead portions 61 and 71 do not overlap with the reflective film 54.

[0463] like Figure 43 As shown, the first lead portion 61 of this embodiment includes a first connection portion 65 for electrically connecting to the terahertz element 20. The first connection portion 65 of this embodiment is a portion of the first lead portion 61 that protrudes toward the terahertz element 20 from a portion that does not overlap with the recess 52 (in other words, the reflective film 54) when viewed in the z-direction. Specifically, the first connection portion 65 is a protruding piece that protrudes from the first inner wall surface 64 toward the terahertz element 20. The first connection portion 65 overlaps with the reflective film 54 when viewed in the z-direction. The first connection portion 65 is connected to the first pad 33b via a first wire W1. Thus, the first lead portion 61 is electrically connected to the terahertz element 20.

[0464] In this embodiment, the protrusion dimension of the first connection portion 65 from the first inner wall surface 64 is shorter than the length of the first wire W1 viewed in the z direction. For example, the protrusion dimension is shorter than ¼ of the opening width of the reflective film 54 .

[0465] Similarly, the second lead portion 71 of this embodiment includes a second connection portion 75 for electrically connecting to the terahertz element 20. The second connection portion 75 of this embodiment is a portion of the second lead portion 71 that protrudes toward the terahertz element 20 from the portion that does not overlap with the recess 52 (in other words, the reflective film 54) when viewed in the z-direction. Specifically, the second connection portion 75 is a protruding piece that protrudes from the second inner wall surface 74 toward the terahertz element 20. The second connection portion 75 overlaps with the recess 52 (in other words, the reflective film 54) when viewed in the z-direction. The second connection portion 75 is connected to the second pad 34b via a second wire W2. Thus, the second lead portion 71 is electrically connected to the terahertz element 20.

[0466] In this embodiment, the protrusion dimension of the second connection portion 75 from the second inner wall surface 74 is shorter than the length of the second wire W2 viewed in the z direction. For example, the protrusion dimension is shorter than ¼ of the opening width of the reflective film 54 .

[0467] In this embodiment, the first connection portion 65 and the second connection portion 75 are disposed opposite each other with the terahertz element 20 interposed therebetween. For example, the two connection portions 65 and 75 are disposed symmetrically in the x-direction. In other words, the two connection portions 65 and 75 are disposed at positions 180° apart from each other when viewed in the z-direction.

[0468] like Figure 42 As shown, the terahertz device 10 includes a bonding layer 90 that bonds the antenna base 50 to the lead frame 60. The bonding layer 90 is formed of, for example, an insulating material, such as a resin-based bonding agent. The bonding layer 90 is provided between the base main surface 50a of the antenna base 50 and the lead frame 60. The antenna base 50 is bonded to the lead frame 60 via the bonding layer 90. Thus, the mounting board 11, the lead frame 60, and the antenna base 50 are unitized. That is, by unitizing the mounting board 11 as a base material and the antenna base 50 so that they are not misaligned, the terahertz element 20 mounted on the mounting board 11 and the reflective film 54 formed on the antenna base 50 are unitized so that they are not misaligned.

[0469] The bonding layer 90 is interposed between the reflective film 54 and the lead frame 60. The bonding layer 90 constrains the reflective film 54 and the lead frame 60 so that they cannot be electrically connected. As described above, the reflective film 54 is not electrically connected to either the antenna substrate 50 or the lead frame 60 and is in an electrically floating state.

[0470] In particular, in this embodiment, the inner peripheral end of the bonding layer 90 protrudes inwardly (in other words, toward the terahertz element 20) relative to the reflective film 54. Therefore, it is difficult for the reflective film 54 and the lead frame 60 to come into contact without contacting the bonding layer 90. The inner peripheral end of the bonding layer 90 refers to the end of the bonding layer 90 on the terahertz element 20 side. For example, the inner peripheral end of the bonding layer 90 is circular in shape when viewed from the z direction, corresponding to the recess 52. However, the shape of the inner peripheral end of the bonding layer 90 is arbitrary and may also be rectangular.

[0471] The terahertz element 20 and the reflective film 54 are housed within a housing space A1 defined by the mounting plate 11 and the recess 52. In this embodiment, the housing space A1 is defined by the mounting principal surface 12 and the antenna surface 53. In this embodiment, the housing space A1 is sealed by the bonding layer 90 and the like, and air exists within the housing space A1.

[0472] like Figures 41-43 As shown in FIG. 1 , the terahertz device 10 includes a first electrode 91 and a second electrode 92 for electrical connection to the outside. In this embodiment, the first electrode 91 and the second electrode 92 are formed of a lead frame 60 .

[0473] That is, in this embodiment, a portion of the first lead portion 61 and a portion of the second lead portion 71 protrude laterally relative to the antenna base 50. The first electrode 91 is formed by the portion of the first lead portion 61 that protrudes laterally relative to the antenna base 50. The first electrode 91 protrudes from the first base side surface 51a.

[0474] Likewise, the second electrode 92 is formed by a portion of the second lead portion 71 that protrudes laterally relative to the antenna base 50. The second electrode 92 protrudes from the second base side surface 51b.

[0475] In this embodiment, the first electrode 91 and the second electrode 92 are spaced apart from each other in the x-direction. The first electrode 91 and the second electrode 92 extend away from each other relative to the antenna base 50, in this embodiment, in the x-direction. The first electrode 91 and the second electrode 92 are orthogonal to the z-direction. In other words, the first electrode 91 and the second electrode 92 are flat plates extending in the horizontal direction.

[0476] As described above, the length of the antenna base 50 in the z direction is greater than the thickness of the mounting plate 11. Furthermore, the length of the antenna base 50 in the z direction is greater than the combined thickness of the mounting plate 11 and the thickness of the lead frame 60. The lead frame 60, disposed between the antenna base 50 and the mounting plate 11, is positioned at the top in the terahertz device 10. Therefore, the first base end portion 91 and the second base end portion 92 are positioned at the top in the terahertz device 10.

[0477] Specifically, when the z-direction is defined as the thickness direction of the terahertz device 10, the first base end portion 91 and the second base end portion 92 are positioned offset from the center of the thickness direction of the terahertz device 10 (in other words, toward the mounting plate 11 or the electromagnetic wave output side). In other words, the electrodes 91 and 92 protrude laterally from the portion of the base side surfaces 51a and 51b that is closer to the base principal surface 50a than the center. Furthermore, the protruding direction is not limited to being perpendicular to the base side surfaces 51a and 51b and may also be tilted.

[0478] Next, a method for manufacturing the terahertz device 10 of this embodiment will be described. For the sake of convenience, first, a method for manufacturing one terahertz device 10 will be described.

[0479] like Figure 46 As shown, the manufacturing method of the terahertz device 10 includes a step of molding a lead frame 60. In this step, a first lead portion 61 having a first partial opening 63 and a first connection portion 65 and a second lead portion 71 having a second partial opening 73 and a second connection portion 75 are formed.

[0480] like Figure 47 As shown, the method for manufacturing the terahertz device 10 includes a step of molding the mounting plate 11. In this step, the mounting plate 11 is molded so as to span the two lead portions 61 and 71. The specific molding method of the mounting plate 11 is arbitrary.

[0481] Afterwards, if Figure 48 As shown, the method for manufacturing the terahertz device 10 includes a step of mounting the terahertz element 20 on the mounting plate 11. In this step, the terahertz element 20 is mounted on the surface of the mounting plate 11 on the side where the lead frame 60 is provided. This unitizes the lead frame 60, the mounting plate 11, and the terahertz element 20.

[0482] like Figure 49 As shown, the method for manufacturing the terahertz device 10 includes a step of electrically connecting the terahertz element 20 to the two lead portions 61 and 71 using two wires W1 and W2. In this step, the first wire W1 is bonded to the first pad 33b and the first lead portion 61, and the second wire W2 is bonded to the second pad 34b and the second lead portion 71. The order of bonding is arbitrary.

[0483] like Figure 50 As shown, the method for manufacturing the terahertz device 10 includes a step of forming a recess 52 in the antenna substrate 50. In this step, the recess 52 having the antenna surface 53 is formed using a mold formed corresponding to the antenna surface 53.

[0484] like Figure 51As shown in FIG. 6, the manufacturing method of the terahertz device 10 includes a process of forming a metal film constituting the reflecting film 54, which is performed after the recess 52 is formed. In this process, the metal film is formed with respect to both the substrate main surface 50a and the antenna surface 53.

[0485] As shown in FIG. 7, the manufacturing method of the terahertz device 10 includes a process of removing the metal film formed on the substrate main surface 50a. The specific method of removing the metal film on the substrate main surface 50a is arbitrary, and for example, a method of removing by patterning can be used, or a method of removing by polishing can be used. Thereby, the metal film as the reflecting film 54 is formed only on the antenna surface 53. Figure 52

[0486] Further, as the process of forming the metal film, the above-described process is not limited. For example, the manufacturing method of the terahertz device 10 can include a process of performing a mask on the substrate main surface 50a, and a process of forming the metal film on the antenna surface 53 by evaporation using an electron beam or the like. In this case, the process of removing the metal film formed on the substrate main surface 50a is not required.

[0487] As shown in FIG. 8, the manufacturing method of the terahertz device 10 includes a process of mounting the unit body of the lead frame 60, the mounting plate 11, and the terahertz element 20, and the antenna substrate 50 on which the reflecting film 54 is formed. In this process, the antenna substrate 50 is joined to the lead frame 60 using the joining layer 90. Thereby, the terahertz device 10 is formed. Figure 53 Further, for the convenience of explanation, the manufacturing method of one terahertz device 10 is described, and actually, a plurality of terahertz devices 10 can be manufactured simultaneously.

[0488] For example, as shown in FIG. 9, even in the case of a method of constituting a plurality of lead frames 60, a metal plate 104, which is a portion to be an opening portion 80, is punched, and a plurality of mounting plates 11 and a plurality of terahertz elements 20 are mounted on the metal plate 104. The first through-hole 104a is formed in the metal plate 104, which is punched at the end portion in the y direction of the lead frame 60. The first through-hole 104a is, for example, a slit shape that extends more to the both sides in the x direction than the mounting plate 11 in an amount corresponding to the two electrodes 91, 92.

[0489] Figure 54 On the other hand, as shown in FIG. 10, in the case of a method of constituting a plurality of lead frames 60, a metal plate 104, which is a portion to be an opening portion 80, is punched, and a plurality of mounting plates 11 and a plurality of terahertz elements 20 are mounted on the metal plate 104. The first through-hole 104a is formed in the metal plate 104, which is punched at the end portion in the y direction of the lead frame 60. The first through-hole 104a is, for example, a slit shape that extends more to the both sides in the x direction than the mounting plate 11 in an amount corresponding to the two electrodes 91, 92.

[0490] Figure 55 ​​​As shown, the base body 105 is prepared with a plurality of recesses 52 and a reflective film 54. A second through-hole 105a is formed in the base body 105 in correspondence with the portion of the lead frame 60 to be exposed. The second through-hole 105a is formed in the portion opposite to the electrodes 91, 92 in the case where the metal plate 104 is attached to the base body 105. Also, in the state where the metal plate 104 on which the mounting plate 11 and the terahertz element 20 are mounted is aligned with the base body 105, the attachment is performed using an adhesive, and then cutting is performed using a cutting machine. Thus, a plurality of terahertz devices 10 are manufactured.

[0491] Here, in attaching the metal plate 104 to the base body 105, the metal plate 104 and the base body 105 are positioned in such a manner that the first positioning portion 104b formed in the metal plate 104 overlaps the second positioning portion 105b formed in the base body 105.

[0492] Next, the effects of the present embodiment are described.

[0493] The electromagnetic wave generated from the oscillation point P1 of the terahertz element 20 is reflected by the reflective film 54 and is radiated in one direction.

[0494] In addition, the two electrodes 91, 92 of the terahertz device 10 protrude to the side with respect to the antenna base 50 in the z direction. Therefore, as shown in FIG. 6, the two electrodes 91, 92 are positioned on the side of the antenna base 50 in the z direction. Figure 56 As shown, the terahertz device 10 can be mounted to the circuit substrate 110 in the state where the antenna base 50 is inserted into the hole 116 formed in the circuit substrate 110. In this case, the two electrodes 91, 92 can be joined with respect to the circuit substrate 110 using a conductive joining material 117 such as solder.

[0495] According to the present embodiment described in detail above, the following effects are exerted.

[0496] (3-1) The terahertz device 10 has: a mounting plate 11 as a base material; a terahertz element 20 mounted to the mounting plate 11; an antenna base 50 provided at a position opposite to the mounting plate 11 and having an antenna surface 53; and a reflective film 54 formed in the antenna surface 53. The reflective film 54 reflects at least a portion of the electromagnetic wave generated from the terahertz element 20 in one direction (for example, upward). According to this structure, the electromagnetic wave generated from the terahertz element is radiated in one direction. Thus, the output of the electromagnetic wave radiated from the terahertz device 10 can be improved. Therefore, the improvement of the gain of the terahertz device 10 can be achieved.

[0497] (3-2) The terahertz device 10 has a first electrode 91 and a second electrode 92 as electrodes for electrical connection with the outside. The two electrodes 91, 92 project laterally with respect to the antenna substrate 50 from the mounting plate 11 in the direction opposite to the antenna substrate 50, that is, the z direction. According to this structure, the terahertz device 10 can be mounted to the circuit board 110 in a state in which the antenna substrate 50 is inserted into the hole 116 provided in the circuit board 110. Thus, the terahertz device 10 can be prevented from projecting in the z direction from the circuit board 110 when the terahertz device 10 is mounted to the circuit board 110, and low height can be achieved.

[0498] That is, the terahertz device 10 has the antenna substrate 50 having the reflecting film 54, and thus can achieve an increase in gain, whereas the terahertz device 10 becomes large in the z direction in proportion to the amount of the antenna substrate 50. Therefore, when mounted to the circuit board 110, there can be a problem in that the terahertz device 10 easily becomes an obstacle.

[0499] In contrast to this, if the two electrodes 91, 92 project laterally, the terahertz device 10 can be mounted to the circuit board 110 in a state in which the antenna substrate 50 is inserted into the hole 116, as described above. Specifically, the antenna substrate 50 can be inserted into the hole 116 up to a position at which the electrodes 91, 92 come into contact with the circuit board 110. Thus, since the amount of projection of the terahertz device 10 from the circuit board 110 can be reduced, the above problem due to the presence of the antenna substrate 50 can be suppressed.

[0500] (3-3) The electrodes 91, 92 are arranged so as to be offset toward the mounting plate 11 side from the central portion in the z direction of the terahertz device 10. According to this structure, the size of the antenna substrate 50 inserted into the hole 116 can be made large, and thus low height can be further achieved.

[0501] (3-4) The electrodes 91, 92 extend in a direction (x direction) orthogonal to the thickness direction (z direction) of the terahertz device 10. According to this structure, the length of the electrodes 91, 92 can be shortened compared to a structure in which the electrodes 91, 92 are bent, and thus the inductance of the electrodes 91, 92 can be reduced. In addition, a decrease in high frequency characteristics due to bending of the electrodes 91, 92 can be suppressed.

[0502] (3-5) The two electrodes 91, 92 are arranged so as to face each other with a space therebetween. According to this structure, the two electrodes 91, 92 can be prevented from coming into contact. In addition, the terahertz device 10 can be supported to the circuit board 110 by the two electrodes 91, 92.

[0503] (3-6) The terahertz element 20 includes: an element main surface 21 having an oscillation point Pl of electromagnetic waves; and an element back surface 22 on the opposite side of the element main surface 21. The reflecting film 54 is not provided on the element back surface 22 side but on the element main surface 21 side. According to this structure, the electromagnetic waves easily reach the reflecting film 54, and thus the electromagnetic waves generated from the oscillation point Pl can be appropriately reflected using the reflecting film 54.

[0504] (3-7) The terahertz element 20 radiates electromagnetic waves from the oscillation point Pl over a range of the opening angle Θ. The reflecting film 54 is formed over an angle of Θ or more with respect to the oscillation point Pl. According to this structure, the electromagnetic waves radiated from the oscillation point Pl over the range of the opening angle Θ are reflected by the reflecting film 54. Thereby, the electromagnetic waves that are not reflected by the reflecting film 54 can be reduced, and an increase in gain can be achieved.

[0505] (3-8) The reflecting film 54 is in a parabolic antenna shape. According to this structure, the electromagnetic waves can be appropriately reflected in one direction.

[0506] (3-9) The reflecting film 54 is arranged in such a manner that a focal point of the reflecting film 54 is located at the oscillation point Pl. According to this structure, the electromagnetic waves generated from the oscillation point Pl are guided in one direction by the reflecting film 54. Thereby, the electromagnetic waves that are not reflected in one direction can be reduced using the reflecting film 54, and an increase in gain can be achieved.

[0507] (3-10) The reflecting film 54 is arranged at a position corresponding to the frequency of the electromagnetic waves generated from the terahertz element 20 in such a manner that resonance of the electromagnetic waves occurs. As one example, a vertical distance from the oscillation point Pl to the reflecting film 54, that is, a prescribed distance zl, is set in such a manner as to satisfy a resonance condition of the electromagnetic waves, for example, (λ A / 4) + ((λ A / 2) x N). According to this structure, an increase in gain of the terahertz device 10 can be achieved.

[0508] (3-11) The reflecting film 54 is in an electrically floating state. According to this structure, adverse conditions such as absorption of electromagnetic waves by the reflecting film 54 can be suppressed.

[0509] (3-12) The antenna substrate 50 is formed of an insulating material. According to this structure, the reflecting film 54 can be suppressed from being electrically connected to any component via the antenna substrate 50.

[0510] (3-13) The mounting board 11 serving as a base material has a mounting main surface 12 on which the terahertz element 20 is mounted. The antenna base 50 includes a base main surface 50a opposite to the mounting main surface 12, and a recessed portion 52 recessed from the base main surface 50a and having an antenna surface 53. The terahertz element 20 and the reflecting film 54 are disposed in an accommodation space Al divided by the mounting main surface 12 and the antenna surface 53. According to this structure, it is possible to reduce the influence of the terahertz element 20 and the reflecting film 54 from the outside.

[0511] (3-14) The reflecting film 54 is formed on the antenna surface 53, and is not formed on the base main surface 50a. According to this structure, it is possible to avoid reflection of electromagnetic waves by the reflecting film 54 formed on the base main surface 50a. Thereby, it is possible to suppress adverse conditions such as generation of standing waves caused by unnecessary reflected waves.

[0512] (3-15) The lead frame 60 serving as a conductive member is provided on the mounting main surface 12. The antenna base 50 is joined to the lead frame 60 via a joining layer 90. The joining layer 90 is formed of an insulating material, and is present between the reflecting film 54 and the lead frame 60. According to this structure, the reflecting film 54 and the lead frame 60 are restricted from contacting each other by the joining layer 90. Thereby, it is possible to suppress electrical connection of the reflecting film 54 and the lead frame 60.

[0513] (3-16) The opening portion 80 overlapping at least a portion of the reflecting film 54 as viewed in the z direction is formed in the lead frame 60. According to this structure, electromagnetic waves reflected by the reflecting film 54 are output via the opening portion 80. Thereby, it is possible to suppress blocking of electromagnetic waves by the lead frame 60.

[0514] (3-17) The lead frame 60 has a first lead portion 61 and a second lead portion 71 disposed opposite to each other with a gap 81 therebetween. The opening portion 80 includes the gap 81 between the two lead portions 61, 71. According to this structure, it is possible to ensure insulation of the two lead portions 61, 71, and to suppress blocking (obstruction) of electromagnetic waves by the lead frame 60.

[0515] (3-18) The opening portion 80 formed in the portion of the first lead portion 61 overlapping the reflecting film 54 as viewed in the z direction has a first partial opening portion 63 communicating with the gap 81. The opening portion 80 formed in the portion of the second lead portion 71 overlapping the reflecting film 54 as viewed in the z direction has a second partial opening portion 73 communicating with the gap 81. According to this structure, it is possible to further suppress blocking of electromagnetic waves by the lead frame 60.

[0516] (3-19) The first lead portion 61 includes a first connection portion 65 for electrically connecting to the terahertz element 20. The first connection portion 65 protrudes from a first inner wall surface 64, which is the inner wall surface of the first partial opening 63, toward the terahertz element 20, and overlaps with the reflective film 54 when viewed in the z direction. The second lead portion 71 includes a second connection portion 75 for electrically connecting to the terahertz element 20. The second connection portion 75 protrudes from a second inner wall surface 74, which is the inner wall surface of the second partial opening 73, toward the terahertz element 20, and overlaps with the reflective film 54 when viewed in the z direction. This structure can suppress the blocking of electromagnetic waves by the lead frame 60, and can also electrically connect the terahertz element 20 to the two lead portions 61 and 71.

[0517] (3-20) The terahertz device 10 includes: a first conductive wire W1 connecting the first pad 33b formed on the terahertz element 20 to the first connecting portion 65; and a second conductive wire W2 connecting the second pad 34b formed on the terahertz element 20 to the second connecting portion 75. As viewed in the z direction, the protrusion of the first connecting portion 65 from the first inner wall surface 64 is shorter than the length of the first conductive wire W1. This structure suppresses electromagnetic waves from being blocked by the first connecting portion 65 by an amount corresponding to the shortened protrusion of the first connecting portion 65. Similarly, as viewed in the z direction, the protrusion of the second connecting portion 75 from the second inner wall surface 74 is shorter than the length of the second conductive wire W2.

[0518] (3-21) The two connecting portions 65 and 75 are disposed facing each other with the terahertz element 20 interposed therebetween. According to this structure, the two wires W1 and W2 are less likely to interfere with each other, and thus contact between the two wires W1 and W2 can be suppressed.

[0519] (Modification of the Third Embodiment)

[0520] ·like Figure 57 As shown, the terahertz device 10 may also include a reflection-reducing film 120 formed on the mounting back surface 13. The reflection-reducing film 120 may also be referred to as an antireflection film or an AR coating film.

[0521] For example, reflection-reducing film 120 is formed on at least a portion of the portion of mounting back surface 13 that overlaps with lead frame 60 when viewed in the z-direction. As one example, reflection-reducing film 120 is formed on the entire portion of mounting back surface 13 that overlaps with lead frame 60 when viewed in the z-direction. This suppresses the generation of standing waves caused by electromagnetic waves reflected from lead frame 60. The specific structure of reflection-reducing film 120 is arbitrary, as long as it can at least reduce reflection of electromagnetic waves in the terahertz band.

[0522] (Fourth embodiment)

[0523] like Figure 58As shown, the terahertz device 10 of this embodiment includes protection diodes 131 and 132 as an example of a specific element electrically connected to the terahertz element 20. The protection diodes 131 and 132 are electrically connected to the terahertz element 20 and, in this embodiment, are connected in parallel with the terahertz element 20. The two protection diodes 131 and 132 are connected in opposite directions relative to the terahertz element 20. In addition to conventional diodes, the protection diodes 131 and 132 may also be Zener diodes, Schottky diodes, or light-emitting diodes.

[0524] Furthermore, the specific element is not limited to the protection diodes 131 and 132 and may also be a control IC (e.g., an ASIC). For example, the control IC may be a component that detects and amplifies the current flowing through the terahertz element 20, supplies power to the terahertz element 20, or processes signals. Furthermore, the specific element and the terahertz element 20 may be connected in any manner, and may be connected in series, for example.

[0525] like Figure 59 and Figure 60 As shown, the two protection diodes 131 and 132 are disposed opposite to each other with the terahertz element 20 interposed therebetween. The two protection diodes 131 and 132 are mounted on the lead frame 60 .

[0526] Specifically, the first protection diode 131 is disposed on the first lead portion 61 in a state electrically connected to the first lead portion 61. The first protection diode 131 is disposed, for example, near the first partial opening 63 in the first lead portion 61. In this embodiment, the first protection diode 131 is disposed in a region surrounded by the first inner wall surface 64, the first lead-facing surface 62, and the end surface of the first lead portion 61 in the y direction.

[0527] Furthermore, the first protection diode 131 is electrically connected to the second lead portion 71 via the first diode wire W3 , thereby electrically connecting the first protection diode 131 to the two electrodes 91 , 92 .

[0528] The first diode wire W3 is bonded to the second lead portion 71 at a position close to the first protection diode 131, that is, in a region surrounded by the second inner wall surface 74, the second lead facing surface 72, and the y-direction end surface of the second lead portion 71. This shortens the length of the first diode wire W3.

[0529] Similarly, the second protection diode 132 is disposed on the second lead portion 71 in a state electrically connected to the second lead portion 71. The second protection diode 132 is disposed, for example, near the second partial opening 73 in the second lead portion 71. In the present embodiment, the second protection diode 132 is disposed in a region surrounded by the second inner wall surface 74, the second lead-facing surface 72, and the end surface of the second lead portion 71 in the y direction.

[0530] In addition, the second protection diode 132 is electrically connected to the first lead portion 61 through a second diode wire W4. Thus, the second protection diode 132 is electrically connected to the two electrodes 91, 92.

[0531] The second diode wire W4 is bonded to a position in the first lead portion 61 near the second protection diode 132, that is, a region surrounded by the first inner wall surface 64, the first lead opposing surface 62, and the y-direction end surface of the first lead portion 61. Thus, the length of the second diode wire W4 is shortened.

[0532] As shown in FIG. 6, the antenna substrate 50 of the present embodiment has housing recesses 141, 142 recessed from the substrate main surface 50a, and the protection diodes 131, 132 are housed in the housing recesses 141, 142. The housing recesses 141, 142 are formed around the recess 52 in a manner not to communicate with the recess 52. That is, the housing recesses 141, 142 can be said to be recesses separately provided outside the recess 52 for housing specific elements. Further, as shown in FIG. 6, the bonding layer 90 is not formed at positions corresponding to the housing recesses 141, 142. Figure 60 Figure 60

[0533] According to the present embodiment described in detail above, the following effects are exerted.

[0534] (4-1) The terahertz device 10 has the protection diodes 131, 132 connected in parallel with respect to the terahertz element 20. According to this structure, for example, in a case where a high voltage is applied to both ends of the terahertz element 20 due to static electricity or the like, current can flow through the protection diodes 131, 132. Thus, the current flowing in the terahertz element 20 can be suppressed, and thus the terahertz element 20 can be protected.

[0535] (4-2) The two protection diodes 131, 132 are connected in a manner that they become in opposite directions with respect to the terahertz element 20. According to this structure, the terahertz element 20 can be protected in a case where a high voltage in either direction is generated.

[0536] (4-3) The antenna substrate 50 has the housing recesses 141, 142 recessed from the substrate main surface 50a, and the protection diodes 131, 132 are housed in the housing recesses 141, 142. According to this structure, the terahertz device 10 can be prevented from being upsized due to the provision of the protection diodes 131, 132.

[0537] (Fifth Embodiment)

[0538] As shown in FIG. 6, the antenna substrate 50 of the present embodiment has housing recesses 141, 142 recessed from the substrate main surface 50a, and the protection diodes 131, 132 are housed in the housing recesses 141, 142. The housing recesses 141, 142 are formed around the recess 52 in a manner not to communicate with the recess 52. That is, the housing recesses 141, 142 can be said to be recesses separately provided outside the recess 52 for housing specific elements. Further, as shown in FIG. 6, the bonding layer 90 is not formed at positions corresponding to the housing recesses 141, 142. Figure 61 ​​As shown, the terahertz device 10 has a support substrate 150 as a base material. The support substrate 150 is formed of a material that transmits electromagnetic waves, for example, and is formed of a dielectric body as one example.

[0539] The support substrate 150 is plate-shaped, and is formed in a rectangular plate shape in the present embodiment. The support substrate 150 is formed longer than the antenna base 50 in a prescribed direction as viewed in the z direction, and has a first extension 151 and a second extension 152 that extend more laterally (for example, in the x direction) than the antenna base 50 as viewed in the z direction. The two extensions 151, 152 are arranged opposite each other in the x direction.

[0540] The support substrate 150 has a mounting front face 153 and a mounting back face 154 as plate faces. The mounting front face 153 and the mounting back face 154 are faces that intersect the z direction, and are orthogonal to the z direction as one example. The terahertz element 20 is mounted to the mounting front face 153. The mounting front face 153 opposes the reflective film 54.

[0541] The terahertz device 10 includes a wiring pattern 160 formed as a conductive member and an electrode on the mounting front face 153, and a bonding layer 170 that bonds the wiring pattern 160 to the antenna base 50.

[0542] The wiring pattern 160 is a conductive layer formed on the mounting front face 153, and is formed of Cu or the like, for example. The length of the support substrate 150 in the z direction, that is, the thickness of the support substrate 150, is thicker than the thickness of the wiring pattern 160. The wiring pattern 160 has a first pattern 161 and a second pattern 162. The specific layout configuration of the first pattern 161 and the second pattern 162 is substantially the same as that of the first lead portion 61 and the second lead portion 71. In the present embodiment, the first pattern 161 and the second pattern 162 correspond to the "first conductive portion" and the "second conductive portion".

[0543] The bonding layer 170 is formed of an insulating material. The bonding layer 170 is provided between the base front face 50a and the wiring pattern 160, and is also present between the reflective film 54 and the wiring pattern 160.

[0544] The electrodes 171, 172 of the present embodiment are constituted by the wiring pattern 160. For example, the electrodes 171, 172 are constituted by the wiring pattern 160 formed in the extensions 151, 152 in the support substrate 150. The first electrode 171 is constituted by a portion of the first pattern 161 that extends in the x direction from the antenna base 50 (the first base side face 51a), and the second electrode 172 is constituted by a portion of the second pattern 162 that extends in the x direction from the antenna base 50 (the second base side face 51b). Thus, as in the third embodiment, the two electrodes 171, 172 project laterally with respect to the antenna base 50. Furthermore, it can also be said that the support substrate 150 supports the two electrodes 171, 172.

[0545] An example of a manufacturing method of the terahertz device 10 according to the present embodiment will be described.

[0546] As shown in FIG. 17, the manufacturing method of the terahertz device 10 includes a step of forming the wiring pattern 160 on the support substrate 150. In this step, the wiring pattern 160 is patterned on the mounting main face 153 of the support substrate 150. Thereby, two patterns 161, 162 are formed. The steps after the mounting of the terahertz element 20 and the like are the same as those of the third embodiment, and thus detailed description is omitted. Figure 62 The present embodiment according to the above detailed description can achieve the following effects.

[0547] (5-1) The terahertz device 10 includes the support substrate 150 as a base material, and the wiring pattern 160 as a conductive member. According to this structure, as the conductive member, the wiring pattern 160 is used instead of the lead frame 60, and thus fine processing is easily performed. Thereby, a signal path corresponding to high-speed signal transmission is easily realized.

[0548] (5-2) The support substrate 150 has the first extension 151 and the second extension 152 which extend to the side with respect to the antenna base 50 in the z direction. The two electrodes 171, 172 are constituted by the wiring pattern 160 formed on the two extensions 151, 152. According to this structure, the two electrodes 171, 172 protrude to the side with respect to the antenna base 50, and thus the effect of (3-2) is achieved.

[0549] (Alterations of the Fifth Embodiment)

[0550] As shown in FIG. 17, at least a part of a portion of the mounting back face 154 which overlaps the wiring pattern 160 in the z direction can be formed with the reflection reducing film 180. The reflection reducing film 180 is formed, for example, on a portion which overlaps the two electrodes 171, 172, that is, the two extensions 151, 152.

[0551] Figure 63 (Sixth Embodiment)

[0552] In the present embodiment, as shown in FIG. 18, the terahertz device 10 includes the first connection pattern 191 and the first electrode 192 formed on the mounting main face 153, the first back face pattern 193 formed on the mounting back face 154, and the first through hole 194, 195 which electrically connects the first connection pattern 191 and the first electrode 192 and the first back face pattern 193.

[0553] Figure 64

[0554] ​​​The first connection pattern 191 is composed of a wiring pattern formed on the mounting main face 153. The first connection pattern 191 is formed in a portion of the mounting main face 153 that opposes the recess 52. The first connection pattern 191 is disposed within the accommodation space Al. The first connection pattern 191 is distanced from the end 54a of the reflective film 54, and the two do not contact. The first lead wire Wl is bonded to the first connection pattern 191.

[0555] The first electrode 192 is composed of a wiring pattern formed on the mounting main face 153. The first electrode 192 is disposed outside the accommodation space Al. The first electrode 192 is formed in a portion of the mounting main face 153 that corresponds to the first extension 151, and projects laterally with respect to the antenna base 50.

[0556] The first back face pattern 193 is composed of a wiring pattern formed on the mounting back face 154. The first back face pattern 193 is disposed so as to overlap both the first connection pattern 191 and the first electrode 192, as viewed in the z direction, across both the first connection pattern 191 and the first electrode 192.

[0557] The first through holes 194, 195 pass through the support substrate 150 in the thickness direction. One first through hole 194 connects the first connection pattern 191 and the first back face pattern 193, and the other first through hole 195 connects the first electrode 192 and the first back face pattern 193. As a result, the first electrode 192 is electrically connected to the terahertz element 20.

[0558] The terahertz device 10 includes, for example, a second connection pattern 201 and a second electrode 202 formed on the mounting main face 153, a second back face pattern 203 formed on the mounting back face 154, and second through holes 204, 205 that electrically connect the second connection pattern 201 and the second electrode 202 to the second back face pattern 203. The second connection pattern 201, the second electrode 202, the second back face pattern 203, and the second through holes 204, 205 are the same as the first connection pattern 191, the first electrode 192, the first back face pattern 193, and the first through holes 194, 195, except for being left-right symmetrical in the x direction, and detailed description thereof is omitted. In the present embodiment, the first connection pattern 191 corresponds to a "first connection portion", and the second connection pattern 201 corresponds to a "second connection portion".

[0559] In this embodiment, the antenna base 50 is mounted on the mounting principal surface 153 via the bonding layer 170. In this case, the two connection patterns 191 and 201 are positioned on the terahertz element 20 side relative to the end 54a of the reflective film 54. Meanwhile, the two electrodes 192 and 202 are positioned laterally relative to the end 54a of the reflective film 54. That is, when viewed in the z-direction, the end 54a of the reflective film 54 (and the base principal surface 50a) is positioned apart from the connection patterns 191 and 201 and the electrodes 192 and 202. This ensures insulation between the reflective film 54 and the electrodes 192 and 202, and also between the reflective film 54 and the connection patterns 191 and 201.

[0560] According to the present embodiment described in detail above, the following effects are achieved.

[0561] (6-1) The terahertz device 10 includes: a support substrate 150 serving as a base material having a mounting main surface 153 and a mounting rear surface 154; connection patterns 191, 201 and electrodes 192, 202 formed on the mounting main surface 153 of the support substrate 150; rear surface patterns 193, 203 formed on the mounting rear surface 154; and through-holes 194, 195, 204, 205. The connection patterns 191, 201 are connected to the terahertz element 20 via wires W1, W2. The through-holes 194, 195, 204, 205 penetrate the circuit substrate 110, thereby connecting the connection patterns 191, 201 to the electrodes 192, 202 and to the rear surface patterns 193, 203. The end 54a of the reflective film 54 is disposed spaced apart from the connection patterns 191, 201 and the electrodes 192, 202. According to this structure, the electrodes 192 , 202 and the terahertz element 20 can be electrically connected while avoiding contact between the reflective film 54 , the connection patterns 191 , 201 , and the electrodes 192 , 202 .

[0562] (Modification of the Sixth Embodiment)

[0563] ·like Figure 65 As shown, the terahertz device 10 may also include specific elements 216 and 217 mounted on the mounting back surface 154 (in this embodiment, the back surface patterns 193 and 203). This makes it easier to install the specific elements 216 and 217 electrically connected to the terahertz element 20. Furthermore, the specific elements 216 and 217 may be, for example, protective diodes. This can suppress excessive current flowing through the terahertz element 20.

[0564] However, this is not limiting, and the specific elements 216 and 217 may be any specific element. For example, the specific elements 216 and 217 may be a control IC (e.g., an ASIC). The control IC may be a component that detects and amplifies the current flowing through the terahertz element 20, supplies power to the terahertz element 20, or processes signals.

[0565] The specific elements 216, 217 can be mounted on the mounting back surface 154 in a state of being electrically connected to the terahertz element 20, for example. The specific elements 216, 217 are not limited to the structure mounted on the back surface patterns 193, 203 as described above, and can be mounted on a portion of the mounting back surface 154 where there is no back surface pattern 193, 203. In this case, the specific elements 216, 217 can be electrically connected to the back surface patterns 193, 203 through the conductive portions.

[0566] • As shown in FIG. 21, the terahertz device 10 can also have a reflection reducing film 220 formed so as to overlap with the wiring pattern formed on the support substrate 150 as viewed in the z direction. The reflection reducing film 220 is formed on the back surface patterns 193, 203, for example, and overlaps with the back surface patterns 193, 203 and the two electrodes 192, 202 as one example. Figure 66

[0567] (Seventh Embodiment)

[0568] As shown in FIG. 22, the antenna base 230 can be in a convex lens shape. The antenna base 230 is disposed on the mounting back surface 154 side with respect to the support substrate 150, for example. The antenna base 230 has an antenna surface 231 curved in a convex manner toward a direction away from the terahertz element 20 disposed on the mounting main surface 153, and a flange surface 232 protruding from a base end of the antenna surface 231 to the side. The antenna surface 231 is curved in correspondence with the lens surface of the antenna base 230. The antenna surface 231 is opposed to the terahertz element 20 in the z direction. Figure 67 The reflection film 233 of the present embodiment is formed at least on the antenna surface 231, and is formed on both the antenna surface 231 and the flange surface 232 as one example. In the present embodiment, the support substrate 150 and the antenna base 230 are interposed between the terahertz element 20 and the reflection film 233.

[0569] In the present embodiment, the support substrate 150 and the antenna base 230 are preferably formed of a material capable of transmitting the electromagnetic wave generated by the terahertz element 20, and can be formed of a dielectric body, for example. As the dielectric body, Si, resin, Teflon, glass, or the like can be considered, for example. The support substrate 150 and the antenna base 230 can be the same material or different materials. If the support substrate 150 and the antenna base 230 are the same material, for example, it is difficult to cause a change in refractive index, and thus reflection at the interface of the support substrate 150 and the antenna base 230 can be suppressed.

[0570] In addition, the structure can be one in which the support substrate 150 and the antenna base 230 are attached, or the structure can be one in which they are integrally formed.

[0571] In addition, the structure can be one in which the support substrate 150 and the antenna base 230 are attached, or the structure can be one in which they are integrally formed.​

[0572] The terahertz device 10 of the present embodiment includes a first connection pattern 241 formed on the mounting main surface 153, a first electrode 242 formed on the mounting back surface 154, and a first via hole 243 connecting the first connection pattern 241 and the first electrode 242. The first electrode 242 is disposed at a position projecting to the side (for example, the x direction) with respect to the antenna base 230 as viewed in the z direction, and the first electrode 242 is separated from the reflecting film 233 in the x direction.

[0573] The terahertz device 10 includes a second connection pattern 251 formed on the mounting main surface 153, a second electrode 252 formed on the mounting back surface 154, and a second via hole 253 connecting the second connection pattern 251 and the second electrode 252. The second electrode 252 is disposed at a position projecting to the side (for example, the x direction) with respect to the antenna base 230 as viewed in the z direction, and the second electrode 252 is separated from the reflecting film 233 in the x direction.

[0574] Here, in the present embodiment, the terahertz element 20 is disposed with the element main surface 21 facing the side of the reflecting film 233. Specifically, the terahertz element 20 is mounted to the support substrate 150 with the element main surface 21 opposing the mounting main surface 153. In this case, it is sufficient to electrically connect the two pads 33b, 34b and the connection patterns 241, 251 using the conductive joining material 244, 245 such as solder. The shape and positional relationship of the antenna surface 231 with respect to the oscillation point PI are the same as in the third embodiment.

[0575] The terahertz device 10 of the present embodiment is mounted to the circuit substrate 110 from the mounting back surface 154 side. Thereby, at least a part of the antenna base 230 is inserted into the hole 116. In addition, since the two electrodes 242, 252 oppose the circuit substrate 110, it is possible to electrically connect using the conductive joining material 117.

[0576] According to the present embodiment described in detail above, the following effects can be exerted.

[0577] (7-1) The terahertz device 10 has the antenna base 230 curved in a convex lens shape so as to protrude in a direction away from the terahertz element 20. The antenna surface 231 corresponds to the lens surface of the antenna base 230. This structure also exerts the effects of (3-1) and the like.

[0578] (7-2) The antenna base 230 is disposed on the mounting back surface 154 side. The terahertz element 20 opposes the reflecting film 233 with the support substrate 150 and the antenna base 230 interposed therebetween. According to this structure, it is also possible to not provide a recess or the like for accommodating the terahertz element 20 within the antenna base 230, and thus the structure of the antenna base 230 can be simplified.

[0579] (Alterations)

[0580] The terahertz device 10 of each embodiment can be altered in the following manner, for example. The following alterations can be combined with each other as long as no technical contradiction arises. Furthermore, for the sake of convenience of explanation, in the following alterations, the third embodiment is basically used for explanation, and can be applied to the other embodiments as long as no technical contradiction arises.

[0581] • As shown in FIG. 26, the terahertz device 10 can have a spacer 260 provided separately from the bonding layer 90 to insulate the reflective film 54 from the lead frame 60. The spacer 260 has insulating properties. The spacer 260 is present between the reflective film 54 and the lead frame 60. In the example shown in FIG. 26, the spacer 260 is present between the lead frame 60 and the bonding layer 90. However, the spacer 260 can be provided between the antenna substrate 50 and the bonding layer 90. Figure 68 Figure 68 According to this structure, the reflective film 54 and the lead frame 60 can be restricted from contacting by the spacer 260 and the bonding layer 90. Thus, the contact of the reflective film 54 and the lead frame 60 can be further suppressed.

[0582] • As shown in FIG. 27, the first connecting portion 65 and the second connecting portion 75 can extend to the vicinity of the terahertz element 20. For example, the front end portion of the first connecting portion 65 can be disposed at a position closer to the terahertz element 20 than the first inner wall surface 64, and the front end portion of the second connecting portion 75 can be disposed at a position closer to the terahertz element 20 than the second inner wall surface 74. In other words, the protruding dimension of both connecting portions 65, 75 can be larger than ¼ of the opening width of the reflective film 54.

[0583] According to this structure, the length of the conductive wire W1, W2 can be shortened, and thus the decrease in responsiveness caused by the conductive wire W1, W2 can be suppressed. Figure 69 • As shown in FIG. 28, the first connecting portion 65 and the second connecting portion 75 can be disposed in parallel. According to this structure, the improvement in responsiveness of the terahertz device 10 can be achieved.

[0584] • The first connecting portion 65 and the second connecting portion 75 can not be provided.

[0585] Figure 70 • As shown in FIG. 29, the first connecting portion 65 and the second connecting portion 75 can be disposed in parallel. According to this structure, the improvement in responsiveness of the terahertz device 10 can be achieved.

[0586] • The first connecting portion 65 and the second connecting portion 75 can not be provided.

[0587] • As shown in FIG. 30, the first connecting portion 65 and the second connecting portion 75 can be disposed in parallel. According to this structure, the improvement in responsiveness of the terahertz device 10 can be achieved. Figure 71 Figure 72 ​​​As shown, a lead frame 60 can be used as the substrate on which the terahertz element 20 is mounted. Specifically, the lead frame 60 can have a structure in which a mounting base 270 on which the terahertz element 20 is mounted, a first connecting portion 271 connected to the mounting base 270, and a second connecting portion 272 insulated from the first connecting portion 271. The first connecting portion 271 is electrically connected to the first pad 33b via a first wire W1. The second connecting portion 272 is electrically connected to the second pad 34b via a second wire W2.

[0588] In addition, the lead frame 60 has a first bent portion 273 extending from the first connecting portion 271 along the outside of the opening edge of the recess 52, and a second bent portion 274 extending from the second connecting portion 272 along the outside of the opening edge of the recess 52.

[0589] In addition, in the present modification, as shown in FIG. 6, the terahertz device 10 can have a structure in which the first connecting portion 271 and the second connecting portion 272 are covered by a cover member 275. Figure 72

[0590] As shown in FIG. 6, the recess 52 can have a diameter-expanded surface 281 having a larger diameter than the antenna surface 53, and a step surface 282 formed between the antenna surface 53 and the diameter-expanded surface 281. The step surface 282 is a surface intersecting the z direction. In this structure, the reflecting film 283 can be formed over the antenna surface 53 and the step surface 282. In this case, since the reflecting film 283 is apart from the lead frame 60 in the z direction, contact between the two can be suppressed. Figure 73

[0591] As shown in FIG. 6, the reflecting film 290 can also have a structure formed over a part of the antenna surface 53. For example, the reflecting film 290 can be formed in a portion below the oscillation point PI. In addition, the reflecting film 290 can also be formed over an angle smaller than the opening angle Θ with respect to the oscillation point PI. The reflecting film only needs to be able to reflect at least a part of the electromagnetic wave generated by the terahertz element 20 in one direction. Figure 74

[0592] The shape of the reflecting film can be appropriately changed. For example, the reflecting film is not limited to one film, and can be composed of a plurality of separate parts. For example, the reflecting film can be formed with a slit, or can be formed with a hole.

[0593] Figure 75 ​​​​As shown, the antenna base 50 can be a structure provided on the mounting back surface 13 side. In this case, since the mounting plate 11 is interposed between the lead frame 60 and the reflecting film 54, contact of the reflecting film 54 with the lead frame 60 can be avoided. However, if the point that the terahertz element 20 can be accommodated in the accommodation space Al is taken into consideration, it is better that the antenna base 50 is provided on the mounting main surface 12 side.

[0594] • As shown, the two lead opposing surfaces 62, 72 can be inclined with respect to the y direction. In this case, the gap 81 extends inclined with respect to the y direction. Figure 76

[0595] In this structure, as in the case where the protection diodes 131, 132 are provided as in the fourth embodiment, at least a part of the first protection diode 131 can be disposed between the first inner wall surface 64 and the first lead opposing surface 62. Likewise, at least a part of the second protection diode 132 can be disposed between the second inner wall surface 74 and the second lead opposing surface 72.

[0596] • As shown, the terahertz element 20 can also be disposed at a position offset from the center point P2 of the reflecting film 54 in the oscillation point P1 as viewed from above. That is, the focal point of the reflecting film 54 can also be different from the oscillation point P1. Figure 77 • As shown, the terahertz device 10 can also be a double mirror type having a reflecting portion 300 provided separately from the reflecting film 54.

[0597] Figure 78 • As shown, the terahertz device 10 can also be a double mirror type having a reflecting portion 300 provided separately from the reflecting film 54.

[0598] Specifically, the terahertz device 10 has a reflecting portion 300 provided separately from the reflecting film 54. More specifically, a reflecting protrusion 301 is formed on the mounting main surface 12, and the reflecting portion 300 is a metal film formed on the surface of the reflecting protrusion 301. The reflecting portion 300 is curved in a manner that protrudes toward the reflecting film 54 in correspondence with the reflecting protrusion 301 being curved in a manner that protrudes toward the reflecting film 54. The reflecting portion 300 is opposed to the reflecting film 54 in the radial direction, and electromagnetic waves reflected by the reflecting portion 300 are irradiated toward the reflecting film 54.

[0599] The terahertz element 20 of this modification is disposed at a position opposed to the reflecting portion 300. In other words, the mounting plate 11, which is a base material having the reflecting portion 300, is disposed at a position opposed to the terahertz element 20.

[0600] ​​The terahertz device 10 has, for example, mounting posts 302, 303. The mounting posts 302, 303 are formed of, for example, an electrically conductive material. The mounting posts 302, 303 pass through the antenna substrate 50 and the reflective film 54 from below into the housing space Al. The terahertz element 20 is mounted to the mounting posts 302, 303. The terahertz element 20 is electrically connected to the mounting posts 302, 303.

[0601] The terahertz element 20 can be directly joined to the mounting posts 302, 303 or joined via an electrically conductive joining material. In addition, in order to avoid contact of the mounting posts 302, 303 with the reflective film 54, an insulating portion (for example, an insulating coating) can be provided on the side surface of the mounting posts 302, 303. Further, the number of mounting posts 302, 303 is arbitrary in the present modification.

[0602] The terahertz device 10 of the present modification has electrodes 304, 305 that are electrically connected to the mounting posts 302, 303. The electrodes 304, 305 are formed on the substrate back surface 50b, which is opposite the substrate main surface 50a, in the antenna substrate 50, and are joined to the mounting posts 302, 303.

[0603] According to the present modification, an electromagnetic wave is generated by the terahertz element 20 by applying a voltage from the two electrodes 304, 305. This electromagnetic wave is reflected by the reflective portion 300 and further reflected by the reflective film 54, and is radiated upward as one direction. That is, the electromagnetic wave generated by the terahertz element 20 is radiated to the reflective film 54 via the reflective portion 300, and is further reflected by the reflective film 54.

[0604] That is, the reflective portion 300 is a member on which the electromagnetic wave generated by the terahertz element 20 is incident and is a member that reflects at least a portion of the electromagnetic wave, and the reflective film 54 is a member on which the electromagnetic wave reflected by the reflective portion 300 is incident and is a member that reflects at least a portion of the electromagnetic wave in one direction (upward).

[0605] Here, in the present modification, the lead frame 60 and the two wires Wl, W2 are not formed in the mounting plate 11. In addition, the reflective portion 300 can converge within the projected range of the terahertz element 20, for example, as viewed from above. Thus, it is possible to suppress the electromagnetic wave from being blocked (obstructed).

[0606] Incidentally, as Figure 78As shown, the through hole 306 formed in the reflective film 54 and penetrating the mounting posts 302 and 303 can be formed larger than the mounting posts 302 and 303 in a manner that the reflective film 54 and the mounting posts 302 and 303 do not contact each other. In addition, the portion of the reflective film 54 between the two mounting posts 302 and 303 can be omitted. That is, the reflective film 54 becomes a ring with the center portion removed when viewed from above. In addition, the reflective portion 300 can be concave relative to the terahertz element 20. Specifically, the reflective portion 300 can also be an antenna shape that is concave in the opposite direction (i.e., upward) to the reflective film 54. That is, the reflective portion 300 can also be a Cassegrain type or a Gregorian type.

[0607] The shape of the antenna base 50 can be changed appropriately. Figure 79 As shown, the antenna base 50 may also be in the shape of a dome with its corners cut off, or may be in the shape of Figure 80 As shown, a hollow portion 313 is formed in the antenna base 50 .

[0608] In addition, if Figure 81 As shown, the antenna base 50 may also be formed into a circular shape when viewed from the z direction. Specifically, the antenna base 50 may be cylindrical with the z direction as the axial direction. In this case, an exposed area 321 is formed around the antenna base 50 to expose the lead frame 60. In this modification, the terahertz device 10 can be mounted on the circuit substrate 110, for example, using the exposed area 321. Specifically, the diameter of the hole 116 formed in the circuit substrate 110 is the same as or slightly larger than the diameter of the outer contour of the antenna base 50. In this case, when the antenna base 50 is inserted into the hole 116, the exposed area 321 abuts against the circuit substrate 110. Therefore, by providing the conductive bonding material 117 in the exposed area 321, the terahertz device 10 can be mounted on the circuit substrate 110 in an electrically connected state. As a result, the terahertz device 10 can be further miniaturized.

[0609] ·like Figure 82 As shown, the electrodes 91 and 92 may have inclined portions 91a and 92a that incline in a direction away from the mounting plate 11 as they move away from the antenna base 50, specifically, downward. For example, the first electrode 91 may have a crank shape having a first base end 91b extending in the x-direction from the antenna base 50 (the first base side surface 51a), a first tip end 91c located laterally and below the first base end 91b, and a first inclined portion 91a connecting the first base end 91b and the first tip end 91c.

[0610] Likewise, the second electrode 92 can be a crank shape having a second base end portion 92b extending in the x direction from the antenna base 50 (the second base side surface 51b), a second front end portion 92c located laterally and downward from the second base end portion 92b, and a second inclined portion 92a connecting the second base end portion 92b and the second front end portion 92c.

[0611] In this structure, the terahertz device 10 is mounted on the circuit board 110 by the conductive joining material 117 joining the two front end portions 91c, 92c to the circuit board 110 with a portion of the antenna base 50 inserted into the hole 116. Thus, even if the circuit board 110 is thinner than the terahertz device 10, the terahertz device 10 can be inhibited from protruding downward from the circuit board 110. Further, the first base end portion 91b and the second base end portion 92b can be omitted.

[0612] • As shown in FIG. 6, the inner peripheral end of the joining layer 90 can be disposed at a position in the same plane as the surface of the reflective film 54. That is, the joining layer 90 is configured so as not to protrude inward (in other words, the terahertz element 20 side) from the reflective film 54. Figure 83 • Further, as shown in FIG. 7, the inner peripheral end of the joining layer 90 is disposed outward (in other words, the base side surface 51 side) in the x direction and the y direction from the surface of the reflective film 54. For example, as shown in FIG. 7, the inner peripheral end of the joining layer 90 is disposed at a position in the same plane as the antenna surface 53. Further, as shown in FIG. 8, the inner peripheral end of the joining layer 90 can also be disposed outward in the x direction and the y direction from the antenna surface 53. In this case, the joining layer 90 is not present between the end 54a of the reflective film 54 and the lead frame 60. That is, the joining layer 90 is not necessarily present between the reflective film 54 and the lead frame 60. In this case, the reflective film 54 and the lead frame 60 are separated in accordance with the amount of height of the joining layer 90, and thus contact of the reflective film 54 and the lead frame 60 can be inhibited.

[0613] Figure 84 Figure 85 Figure 84 Figure 85

[0614] • The two electrodes 91, 92 can also protrude in the y direction rather than the x direction, or can protrude in both the x direction and the y direction.

[0615] • The terahertz element 20 can also be disposed so that the element back surface 22 faces the reflective film 54. That is, the reflective film 54 is not disposed on the element front surface 21 side with respect to the terahertz element 20, but is disposed on the element back surface 22 side.

[0616] • The reflective film 54 can also not be in an electrically floating state.

[0617] ​​​​​• A reflective film 54 can also be formed on the main surface 50a of the substrate. In this case, for example, a reflection-reducing film can be formed on the side opposite the main surface 50a of the substrate.

[0618] • The gas present in the accommodation space Al is not limited to air and can be changed arbitrarily. The gas can also be a vacuum.

[0619] • The antenna substrate 50 and the lead frame 60 can also be unified by means other than bonding (adhesion).

[0620] • The shape of the opening portion 80 can be changed arbitrarily. For example, either of the two-part opening portions 63, 73 can be omitted, and the two-part opening portions 63, 73 can also be smaller than the reflective film 54.

[0621] • The shape of the mounting plate 11, which is the base material, is arbitrary. For example, the mounting plate 11 can be formed to be thicker than the lead frame 60.

[0622] • The electrodes 91, 92 can also be disposed near the central portion in the z direction of the terahertz device 10, or can be disposed offset downward from the central portion.

[0623] • The specific structure of the terahertz element 20 can be changed appropriately. For example, the positions and sizes of the two spacers 33b, 34b can be changed. In addition, the oscillation point Pl can be located at a position other than the center.

[0624] • The terahertz element 20 can be a component that receives electromagnetic waves and converts the received electromagnetic waves into electric energy. Specifically, the terahertz element 20, for example, receives electromagnetic waves over a range of an opening angle Θ with respect to the oscillation point Pl. In this case, the oscillation point Pl can be said to be a reception point that performs reception of electromagnetic waves.

[0625] In this structure, the reflective film is a film that reflects the incident electromagnetic waves toward the terahertz element 20 (preferably the reception point). Thus, the reception intensity of the terahertz device 10 becomes high, and therefore, an increase in gain related to reception can be achieved.

[0626] Also, the terahertz element 20 can be a component that performs both oscillation and reception of electromagnetic waves. That is, the oscillation point Pl can be a point that performs at least one of oscillation and reception of electromagnetic waves.

[0627] Further, in a case where the terahertz element 20 is an element that receives electromagnetic waves, the reflection portion 300 in the above-described modification example reflects the electromagnetic waves reflected by the reflection film 54 toward the terahertz element 20. According to this structure, the electromagnetic waves reflected by the reflection film 54 are irradiated to the terahertz element 20 via the reflection portion 300. That is, the reflection film 54 is a film that reflects at least a part of the incident electromagnetic waves toward the reflection portion 300, and the reflection portion 300 can be said to be a portion that is irradiated with the electromagnetic waves reflected by the reflection film 54 and irradiates at least a part of the electromagnetic waves toward the terahertz element 20.

[0628] (Addendum)

[0629] Next, the following describes the technical ideas based on the above-described embodiments and modifications.

[0630] (Addendum 1)

[0631] A terahertz device includes:

[0632] a substrate;

[0633] a terahertz element that generates electromagnetic waves, mounted on the substrate;

[0634] an antenna base having an antenna surface, provided at a position opposite to the substrate; and

[0635] a reflection film that reflects at least a part of the electromagnetic waves generated from the terahertz element in one direction, formed on the antenna surface.

[0636] (Addendum 2)

[0637] the terahertz device described in Addendum 1,

[0638] the antenna base has:

[0639] a base main surface opposite to the substrate;

[0640] a base back surface opposite to the base main surface; and

[0641] a base side surface facing a lateral direction,

[0642] the terahertz device has an electrode for electrical connection with the outside,

[0643] the electrode has:

[0644] a side electrode formed on the base side surface; and

[0645] a back electrode formed on the base back surface.

[0646] (Addendum 3)

[0647] the terahertz device described in Addendum 2,

[0648] The electrode is composed of a lead frame bent along the antenna base.

[0649] (Note 4)

[0650] The terahertz device as claimed in any one of Notes 1 to 3,

[0651] The electrode has:

[0652] a base end portion bent at an angle portion of the base side surface and the base main surface in a manner to face the base side surface;

[0653] a bent portion bent at an angle portion of the base side surface and the base back surface; and

[0654] a front end portion disposed on the base back surface,

[0655] The side electrode is a portion from the base end portion to the bent portion,

[0656] The back electrode is a portion from the bent portion to the front end portion.

[0657] (Note 5)

[0658] The terahertz device as claimed in any one of Notes 1 to 4,

[0659] The terahertz element includes:

[0660] an element main surface having an oscillation point of electromagnetic waves;

[0661] an element back surface opposite to the element main surface,

[0662] The reflective film is disposed on the element back surface more toward the element main surface side.

[0663] (Note 6)

[0664] The terahertz device as claimed in Note 5,

[0665] The terahertz element is an element radiating electromagnetic waves from the oscillation point in a radial manner over a range of an opening angle,

[0666] The reflective film is formed over an angle of the opening angle or more with respect to the oscillation point.

[0667] (Note 7)

[0668] The terahertz device as claimed in Note 5 or 6,

[0669] The reflective film is in a parabolic antenna shape.

[0670] (Note 8)

[0671] The terahertz device according to any one of the above-mentioned embodiments,

[0672] The reflection film is disposed so that a focal point of the reflection film is located at the oscillation point.

[0673] (Embodiment 9)

[0674] The terahertz device according to any one of the above-mentioned embodiments,

[0675] The center point of the reflection film coincides with the oscillation point as viewed from the direction opposite to the substrate and the antenna base.

[0676] (Embodiment 10)

[0677] The terahertz device according to any one of the above-mentioned embodiments,

[0678] The reflection film is disposed at a position corresponding to the frequency of the electromagnetic wave generated from the terahertz element so that the electromagnetic wave resonates.

[0679] (Embodiment 11)

[0680] The terahertz device according to any one of the above-mentioned embodiments,

[0681] The terahertz element is disposed at a position where the center point of the reflection film is misaligned with the oscillation point as viewed from the direction opposite to the substrate and the antenna base.

[0682] (Embodiment 12)

[0683] The terahertz device according to any one of the above-mentioned embodiments,

[0684] The reflection film is in an electrically floating state.

[0685] (Embodiment 13)

[0686] The terahertz device according to any one of the above-mentioned embodiments,

[0687] The antenna base is formed of an insulating material.

[0688] (Embodiment 14)

[0689] The terahertz device according to any one of the above-mentioned embodiments,

[0690] The substrate is disposed opposite to the reflection film and is formed of a material that transmits electromagnetic waves.

[0691] (Embodiment 15)

[0692] The terahertz device according to the above-mentioned embodiment,

[0693] The substrate is formed of a dielectric body.

[0694] (Note 16)

[0695] The terahertz device as described in any one of Notes 1 to 15,

[0696] The substrate has a mounting main surface on which the terahertz element is mounted,

[0697] The antenna substrate has:

[0698] a substrate main surface opposite to the mounting main surface; and

[0699] a recessed portion having the antenna surface, recessed from the substrate main surface,

[0700] The terahertz element and the reflective film are disposed in a housing space divided by the mounting main surface and the antenna surface.

[0701] (Note 17)

[0702] The terahertz device as described in Note 16,

[0703] The reflective film is formed on the antenna surface, and is not formed on the substrate main surface.

[0704] (Note 18)

[0705] The terahertz device as described in Note 16 or 17,

[0706] The antenna substrate has a housing recess portion provided separately from the recessed portion, which houses a protection diode connected in parallel with the terahertz element.

[0707] (Note 19)

[0708] The terahertz device as described in any one of Notes 16 to 18, has:

[0709] a conductive member provided on the mounting main surface and connected to the terahertz element; and

[0710] a bonding layer provided between the antenna substrate and the conductive member and bonding the antenna substrate and the conductive member,

[0711] The bonding layer is formed of an insulating material, and is present between the reflective film and the conductive member.

[0712] (Note 20)

[0713] The terahertz device as described in Note 19,

[0714] has an insulating spacer provided separately from the bonding layer, between the reflective film and the conductive member.

[0715] (Note 21)

[0716] The terahertz device according to any one of Notes 19 to 21,

[0717] The recess has a diameter-enlarged surface that is larger in diameter than the antenna surface, and a step surface formed between the antenna surface and the diameter-enlarged surface,

[0718] The reflective film is formed over the antenna surface and the step surface.

[0719] (Note 22)

[0720] The terahertz device according to any one of Notes 19 to 21,

[0721] The substrate has a mounting back surface opposite to the mounting main surface,

[0722] The terahertz device is formed in at least a portion of a portion of the mounting back surface that overlaps the conductive member as viewed from a direction opposite to the antenna base with respect to the substrate, and has a reflection-reducing film that reduces reflection of electromagnetic waves.

[0723] (Note 23)

[0724] The terahertz device according to any one of Notes 1 to 22,

[0725] The conductive member is provided to the substrate and connected to the terahertz element,

[0726] The opening portion is formed in the conductive member so as to overlap at least a portion of the reflective film as viewed from a direction opposite to the antenna base with respect to the substrate.

[0727] (Note 24)

[0728] The terahertz device according to Note 23,

[0729] The conductive member has a first conductive portion and a second conductive portion that are arranged opposite to each other with a space therebetween,

[0730] The opening portion includes a gap between the first conductive portion and the second conductive portion.

[0731] (Note 25)

[0732] The terahertz device according to Note 24,

[0733] The opening portion has:

[0734] a first partial opening portion that communicates with the gap and is formed in a portion of the first conductive portion that overlaps the reflective film as viewed from the direction opposite to the antenna base; and

[0735] A second-part opening portion that communicates with the gap, which is formed in a portion of the second conductive portion that overlaps the reflective film from the opposite direction.

[0736] (Paragraph 26)

[0737] The terahertz device according to Paragraph 25,

[0738] The first conductive portion has a first connecting portion for electrically connecting with the terahertz element,

[0739] The first connecting portion protrudes toward the terahertz element from a first inner wall surface that is an inner wall surface of the first-part opening portion,

[0740] The second conductive portion has a second connecting portion for electrically connecting with the terahertz element,

[0741] The second connecting portion protrudes toward the terahertz element from a second inner wall surface that is an inner wall surface of the second-part opening portion.

[0742] (Paragraph 27)

[0743] The terahertz device according to Paragraph 26,

[0744] has a first lead wire that connects a first gasket formed in the terahertz element and the first connecting portion,

[0745] From the opposite direction, a protruding dimension of the first connecting portion from the first inner wall surface is shorter than a length of the first lead wire.

[0746] (Paragraph 28)

[0747] The terahertz device according to Paragraph 27,

[0748] has a second lead wire that connects a second gasket formed in the terahertz element and the second connecting portion,

[0749] From the opposite direction, a protruding dimension of the second connecting portion from the second inner wall surface is shorter than a length of the second lead wire.

[0750] (Paragraph 29)

[0751] The terahertz device according to Paragraph 26,

[0752] has a first lead wire that connects a first gasket formed in the terahertz element and the first connecting portion,

[0753] From the opposite direction, a length of the first lead wire is shorter than a protruding dimension of the first connecting portion from the first inner wall surface.

[0754] (Paragraph 30)

[0755] The terahertz device according to any one of the above 29,

[0756] The second lead wire connecting the second pad formed on the terahertz element and the second connecting portion,

[0757] The length of the second lead wire is shorter than the protruding dimension of the second connecting portion from the second inner wall surface, as viewed from the opposite direction.

[0758] (Paragraph 31)

[0759] The terahertz device according to any one of the above 26 to 30,

[0760] The first connecting portion and the second connecting portion are arranged opposite each other with the terahertz element therebetween.

[0761] (Paragraph 32)

[0762] The terahertz device according to any one of the above 26 to 30,

[0763] The first connecting portion and the second connecting portion are arranged in parallel.

[0764] (Paragraph 33)

[0765] The terahertz device according to any one of the above 23 to 32,

[0766] The conductive member is composed of a lead frame,

[0767] The substrate is mounted on the lead frame.

[0768] (Paragraph 34)

[0769] The terahertz device according to the above 33,

[0770] The substrate is a plate-shaped member thinner than the thickness of the lead frame.

[0771] (Paragraph 35)

[0772] The terahertz device according to the above 1,

[0773] The lead frame is used as the substrate,

[0774] The lead frame includes:

[0775] A mounting substrate on which the terahertz element is mounted;

[0776] A first connecting portion as a portion connected to the mounting substrate, and the first connecting portion is electrically connected to a first pad formed on the terahertz element via a first lead wire; and

[0777] A second connecting portion insulated from the first connecting portion, and electrically connected to a second pad formed in the terahertz element via a second wire.

[0778] (Paragraph 36)

[0779] The terahertz device according to any one of paragraphs 1 to 35,

[0780] The substrate has:

[0781] A mounting main surface on which the terahertz element is mounted; and

[0782] A mounting back surface on the opposite side of the mounting main surface,

[0783] The antenna base is disposed on the mounting back surface side,

[0784] The terahertz element faces the reflective film across the substrate.

[0785] (Paragraph 37)

[0786] A terahertz device includes:

[0787] A terahertz element that generates electromagnetic waves;

[0788] A substrate having a reflective portion that faces the terahertz element and reflects at least a portion of the electromagnetic waves generated from the terahertz element;

[0789] An antenna base having an antenna surface disposed at a position opposite the substrate; and

[0790] A reflective film formed on the antenna surface that reflects at least a portion of the electromagnetic waves reflected by the reflective portion in one direction.

[0791] (Paragraph 38)

[0792] A terahertz device includes:

[0793] A substrate;

[0794] A terahertz element mounted on the substrate that receives electromagnetic waves;

[0795] An antenna base having an antenna surface disposed at a position opposite the substrate; and

[0796] A reflective film formed on the antenna surface that reflects incident electromagnetic waves toward the terahertz element.

[0797] (Paragraph 39)

[0798] The terahertz device according to paragraph 38, wherein

[0799] The antenna base has:

[0800] a substrate back surface opposite to the substrate main surface; and

[0801] a substrate back surface opposite to the substrate main surface; and

[0802] a substrate side surface facing a lateral direction,

[0803] the terahertz device has an electrode for electrical connection with the outside,

[0804] the electrode has:

[0805] a side surface electrode formed on the substrate side surface; and

[0806] a back surface electrode formed on the substrate back surface.

[0807] (Paragraph 40)

[0808] the terahertz device as described in Paragraph 39,

[0809] the electrode is composed of a lead frame bent along the antenna substrate.

[0810] (Paragraph 41)

[0811] the terahertz device as described in Paragraph 40,

[0812] the electrode includes:

[0813] a base end portion in which an angle portion of the substrate side surface and the substrate main surface is bent toward the substrate side surface;

[0814] a bent portion in which an angle portion of the substrate side surface and the substrate back surface is bent; and

[0815] a front end portion disposed on the substrate back surface,

[0816] the side surface electrode is a portion from the base end portion to the bent portion,

[0817] the back surface electrode is a portion from the bent portion to the front end portion.

[0818] (Paragraph 42)

[0819] the terahertz device as described in any one of Paragraphs 38 to 41,

[0820] the terahertz element includes:

[0821] an element main surface having a reception point that receives an electromagnetic wave; and

[0822] an element back surface opposite to the element main surface,

[0823] The reflection film is disposed closer to the main surface of the element than to the back surface of the element.

[0824] (Paragraph 43)

[0825] The terahertz device according to any one of Paragraphs 42,

[0826] The terahertz element is an element that receives electromagnetic waves in a range of an opening angle with respect to the reception point,

[0827] The reflection film is formed with respect to the reception point over an angle of the opening angle or more.

[0828] (Paragraph 44)

[0829] The terahertz device according to any one of Paragraphs 42 or 43,

[0830] The reflection film is in the shape of a parabolic antenna.

[0831] (Paragraph 45)

[0832] The terahertz device according to Paragraph 44,

[0833] The reflection film is disposed in such a manner that a focal point of the reflection film is located at the reception point.

[0834] (Paragraph 46)

[0835] The terahertz device according to Paragraph 44,

[0836] A center point of the reflection film coincides with the reception point as viewed from a direction opposite to a direction in which the substrate and the antenna base are opposed to each other.

[0837] (Paragraph 47)

[0838] The terahertz device according to any one of Paragraphs 44 to 46,

[0839] The reflection film is disposed at a position corresponding to a frequency of an electromagnetic wave received by the terahertz element in such a manner that the reflection film resonates with the electromagnetic wave.

[0840] (Paragraph 48)

[0841] The terahertz device according to Paragraph 44,

[0842] The terahertz element is disposed at a position deviated from a center point of the reflection film with respect to the reception point as viewed from a direction opposite to a direction in which the substrate and the antenna base are opposed to each other.

[0843] (Paragraph 49)

[0844] The terahertz device according to any one of Paragraphs 38 to 48,

[0845] The above-mentioned reflective film is in an electrically floating state.

[0846] (Paragraph 50)

[0847] The terahertz device according to any one of paragraphs 38 to 49,

[0848] The above-mentioned antenna substrate is formed of an insulating material.

[0849] (Paragraph 51)

[0850] The terahertz device according to any one of paragraphs 38 to 50,

[0851] The above-mentioned substrate is disposed opposite the above-mentioned reflective film and is formed of a material that transmits electromagnetic waves.

[0852] (Paragraph 52)

[0853] The terahertz device according to paragraph 51,

[0854] The above-mentioned substrate is formed of a dielectric body.

[0855] (Paragraph 53)

[0856] The terahertz device according to any one of paragraphs 38 to 52,

[0857] The above-mentioned substrate has a mounting main surface on which the above-mentioned terahertz element is mounted,

[0858] The above-mentioned antenna substrate includes:

[0859] a substrate main surface opposite the above-mentioned mounting main surface; and

[0860] a recessed portion recessed from the above-mentioned substrate main surface and having the above-mentioned antenna surface,

[0861] The above-mentioned terahertz element and the above-mentioned reflective film are disposed in a housing space defined by the above-mentioned mounting main surface and the above-mentioned antenna surface.

[0862] (Paragraph 54)

[0863] The terahertz device according to paragraph 53,

[0864] The above-mentioned reflective film is formed on the above-mentioned antenna surface and is not formed on the above-mentioned substrate main surface.

[0865] (Paragraph 55)

[0866] The terahertz device according to paragraph 53 or 54,

[0867] The above-mentioned antenna substrate has a housing recess portion disposed separately from the above-mentioned recessed portion, the housing recess portion housing a protection diode connected in parallel with the above-mentioned terahertz element.

[0868] (Paragraph 56)

[0869] The terahertz device according to any one of paragraphs 53 to 55,

[0870] a conductive member provided on the mounting main surface and connected to the terahertz element, and

[0871] a bonding layer provided between the antenna substrate and the conductive member and bonding the antenna substrate and the conductive member,

[0872] the bonding layer is formed of an insulating material and is present between the reflective film and the conductive member.

[0873] (Paragraph 57)

[0874] The terahertz device according to paragraph 56,

[0875] has an insulating spacer provided additionally between the reflective film and the conductive member with respect to the bonding layer.

[0876] (Paragraph 58)

[0877] The terahertz device according to any one of paragraphs 56 or 57,

[0878] the recess has a diameter-expanded surface having a larger diameter than the antenna surface, and a step surface formed between the antenna surface and the diameter-expanded surface,

[0879] the reflective film is formed over the antenna surface and the step surface.

[0880] (Paragraph 59)

[0881] The terahertz device according to any one of paragraphs 56 to 58,

[0882] the substrate has a mounting back surface on the side opposite to the mounting main surface,

[0883] the terahertz device has a reflection-reducing film that reduces reflection of electromagnetic waves, formed in at least a portion of a portion of the mounting back surface that overlaps the conductive member as viewed from the opposite direction of the substrate and the antenna substrate.

[0884] (Paragraph 60)

[0885] The terahertz device according to any one of paragraphs 38 to 59,

[0886] a conductive member provided on the mounting main surface and connected to the terahertz element, and

[0887] The conductive member is formed with an opening portion overlapping at least a portion of the reflective film as viewed from the opposite direction of the substrate and the antenna base.

[0888] (Addendum 61)

[0889] The terahertz device as claimed in Addendum 60,

[0890] The conductive member has a first conductive portion and a second conductive portion disposed opposite each other with a gap therebetween,

[0891] The opening portion includes the gap between the first conductive portion and the second conductive portion.

[0892] (Addendum 62)

[0893] The terahertz device as claimed in Addendum 61,

[0894] The opening portion includes:

[0895] a first partial opening portion communicating with the gap and formed in a portion of the first conductive portion overlapping the reflective film as viewed from the opposite direction; and

[0896] a second partial opening portion communicating with the gap and formed in a portion of the second conductive portion overlapping the reflective film as viewed from the opposite direction.

[0897] (Addendum 63)

[0898] The terahertz device as claimed in Addendum 62,

[0899] The first conductive portion has a first connecting portion for electrically connecting with the terahertz element,

[0900] The first connecting portion protrudes toward the terahertz element from a first inner wall surface as an inner wall surface of the first partial opening portion,

[0901] The second conductive portion has a second connecting portion for electrically connecting with the terahertz element,

[0902] The second connecting portion protrudes toward the terahertz element from a second inner wall surface as an inner wall surface of the second partial opening portion.

[0903] (Addendum 64)

[0904] The terahertz device as claimed in Addendum 63,

[0905] has a first lead wire connecting a first pad formed in the terahertz element and the first connecting portion,

[0906] The first connecting portion has a protruding dimension from the first inner wall surface that is shorter than a length of the first lead wire, as viewed from the relative direction.

[0907] (Paragraph 65)

[0908] The terahertz device according to any one of Paragraphs 63 to 67,

[0909] The second connecting portion has a protruding dimension from the second inner wall surface that is shorter than a length of the second lead wire, as viewed from the relative direction.

[0910] (Paragraph 66)

[0911] The terahertz device according to any one of Paragraphs 63 to 67,

[0912] The terahertz device according to any one of Paragraphs 63 to 67,

[0913] The first connecting portion has a protruding dimension from the first inner wall surface that is shorter than a length of the first lead wire, as viewed from the relative direction.

[0914] (Paragraph 67)

[0915] The terahertz device according to any one of Paragraphs 63 to 67,

[0916] The terahertz device according to any one of Paragraphs 63 to 67,

[0917] The second connecting portion has a protruding dimension from the second inner wall surface that is shorter than a length of the second lead wire, as viewed from the relative direction.

[0918] (Paragraph 68)

[0919] The terahertz device according to any one of Paragraphs 63 to 67,

[0920] The first connecting portion and the second connecting portion are arranged in opposition across the terahertz element.

[0921] (Paragraph 69)

[0922] The terahertz device according to any one of Paragraphs 63 to 67,

[0923] The first connecting portion and the second connecting portion are arranged in parallel.

[0924] (Paragraph 70)

[0925] The terahertz device according to any one of Paragraphs 60 to 69,

[0926] The terahertz device according to any one of Paragraphs 60 to 69,

[0927] The conductive member is composed of a lead frame,

[0928] The substrate is mounted to the lead frame.

[0929] (Paragraph 71)

[0930] The terahertz device as described in Paragraph 70,

[0931] The substrate is a plate-shaped member thinner than the thickness of the lead frame.

[0932] (Paragraph 72)

[0933] The terahertz device as described in Paragraph 38,

[0934] The lead frame has the substrate,

[0935] The lead frame includes:

[0936] A mounting substrate on which the terahertz element is mounted;

[0937] A first connection portion as a portion connected to the mounting substrate, and the first connection portion is electrically connected to a first pad formed in the terahertz element via a first lead wire;

[0938] A second connection portion insulated from the first connection portion, and the second connection portion is electrically connected to a second pad formed in the terahertz element via a second lead wire.

[0939] (Paragraph 73)

[0940] The terahertz device as described in Paragraph 38,

[0941] The substrate includes:

[0942] A mounting main surface on which the terahertz element is mounted; and

[0943] A mounting back surface on the opposite side of the mounting main surface,

[0944] The antenna substrate is provided on the mounting back surface side,

[0945] The terahertz element faces the reflective film with the substrate therebetween.

[0946] (Paragraph 74)

[0947] A terahertz device includes:

[0948] A terahertz element that receives electromagnetic waves;

[0949] A substrate provided on the opposite side of the terahertz element, having a reflective portion that reflects at least a portion of the incident electromagnetic waves to the terahertz element;

[0950] an antenna base provided at a position opposite to the substrate and having an antenna surface; and

[0951] a reflection film formed on the antenna surface and reflecting at least a portion of the incident electromagnetic wave toward the reflection portion.

[0952] (Paragraph 75)

[0953] A terahertz device includes:

[0954] a substrate;

[0955] a terahertz element mounted on the substrate and generating electromagnetic waves;

[0956] an antenna base provided at a position opposite to the substrate and having an antenna surface;

[0957] a reflection film formed on the antenna surface and reflecting at least a portion of the electromagnetic waves generated from the terahertz element in one direction; and

[0958] an electrode for electrical connection with the outside,

[0959] the electrode protrudes laterally with respect to the antenna base as viewed from a direction opposite to the substrate with respect to the antenna base.

[0960] (Paragraph 76)

[0961] The terahertz device as claimed in Paragraph 75,

[0962] the electrode is disposed more toward the substrate side than a central portion of the opposite direction of the terahertz device.

[0963] (Paragraph 77)

[0964] The terahertz device as claimed in Paragraph 75 or 76,

[0965] the electrode is composed of a lead frame.

[0966] (Paragraph 78)

[0967] The terahertz device as claimed in Paragraph 77,

[0968] the electrode includes an inclined portion inclined in a direction away from the substrate as it moves away from the antenna base.

[0969] (Paragraph 79)

[0970] The terahertz device as claimed in Paragraph 77 or 78,

[0971] the electrode is crank-shaped.

[0972] (Note 80)

[0973] the terahertz device as recited in Note 75 or 76,

[0974] the substrate is a support substrate,

[0975] the support substrate has an extension portion that protrudes more laterally than the antenna base from the opposite direction,

[0976] the electrode is composed of a wiring pattern formed in the extension portion.

[0977] (Note 81)

[0978] the terahertz device as recited in Note 80,

[0979] the substrate has a mounting main surface on which the terahertz element is mounted, and a mounting back surface on the opposite side from the mounting main surface,

[0980] the terahertz device has:

[0981] a wiring pattern formed in the mounting main surface at a position apart from the electrode, and the wiring pattern is a connection pattern connected to the terahertz element;

[0982] a back surface pattern that is a wiring pattern formed in the mounting back surface;

[0983] a through-hole that connects the connection pattern and the electrode to the back surface pattern by penetrating the support substrate,

[0984] the end of the reflective film is disposed apart from between the connection pattern and the electrode from the opposite direction.

[0985] (Note 82)

[0986] the terahertz device as recited in any one of Notes 75 to 81,

[0987] the terahertz element has:

[0988] an element main surface having an oscillation point that generates an electromagnetic wave; and

[0989] an element back surface on the opposite side from the element main surface,

[0990] the reflective film is disposed closer to the element main surface than to the element back surface.

[0991] (Note 83)

[0992] the terahertz device as recited in any one of Notes 75 to 81,

[0993] The terahertz element is a component that radiates electromagnetic waves from the oscillation point in a radial manner over the opening angle range,

[0994] The reflection film is formed over an angle of the opening angle or more with respect to the oscillation point.

[0995] (Paragraph 84)

[0996] The terahertz device according to any one of Paragraphs 83,

[0997] The reflection film is a parabolic antenna shape.

[0998] (Paragraph 85)

[0999] The terahertz device according to any one of Paragraphs 84,

[1000] The reflection film is disposed so that a focal point of the reflection film is located at the oscillation point.

[1001] (Paragraph 86)

[1002] The terahertz device according to any one of Paragraphs 84,

[1003] The center point of the reflection film coincides with the oscillation point as viewed from the opposite direction of the substrate and the antenna base.

[1004] (Paragraph 87)

[1005] The terahertz device according to any one of Paragraphs 84 to 86,

[1006] The reflection film is disposed at a position corresponding to the frequency of the electromagnetic wave generated from the terahertz element in a manner that resonates with the electromagnetic wave.

[1007] (Paragraph 88)

[1008] The terahertz device according to Paragraph 84,

[1009] The terahertz element is disposed at a position where the center point of the reflection film and the oscillation point are misaligned as viewed from the opposite direction of the substrate and the antenna base.

[1010] (Paragraph 89)

[1011] The terahertz device according to any one of Paragraphs 75 to 88,

[1012] The reflection film is in an electrically floating state.

[1013] (Paragraph 90)

[1014] The terahertz device according to any one of Paragraphs 75 to 89,

[1015] The antenna substrate is formed of an insulating material.

[1016] (Paragraph 91)

[1017] The terahertz device according to any one of paragraphs 75 to 90,

[1018] The substrate is disposed opposite the reflective film and is formed of a material that transmits electromagnetic waves.

[1019] (Paragraph 92)

[1020] The terahertz device according to paragraph 91,

[1021] The substrate is formed of a dielectric body.

[1022] (Paragraph 93)

[1023] The terahertz device according to any one of paragraphs 75 to 92,

[1024] The substrate has a mounting main surface on which the terahertz element is mounted,

[1025] The antenna substrate has:

[1026] a substrate main surface opposite the mounting main surface; and

[1027] a recessed portion recessed from the substrate main surface and having the antenna surface,

[1028] The terahertz element and the reflective film are disposed in an accommodation space defined by the mounting main surface and the antenna surface.

[1029] (Paragraph 94)

[1030] The terahertz device according to paragraph 93,

[1031] The reflective film is formed on the antenna surface and is not formed on the substrate main surface.

[1032] (Paragraph 95)

[1033] The terahertz device according to paragraph 93 or 94,

[1034] The antenna substrate has an accommodation recess portion disposed separately from the recessed portion, the accommodation recess portion accommodating a protection diode connected in parallel with the terahertz element.

[1035] (Paragraph 96)

[1036] The terahertz device according to any one of paragraphs 93 to 95, comprising:

[1037] a conductive member disposed on the mounting main surface and connected to the terahertz element; and

[1038] a joining layer provided between the antenna substrate and the conductive member and joining the antenna substrate and the conductive member,

[1039] the joining layer is formed of an insulating material and is present between the reflective film and the conductive member.

[1040] (Paragraph 97)

[1041] the terahertz device according to any one of Paragraphs 96,

[1042] an insulating spacer is additionally provided between the reflective film and the conductive member with respect to the joining layer.

[1043] (Paragraph 98)

[1044] the terahertz device according to any one of Paragraphs 96 or 97,

[1045] the recess has a diameter-expanded surface having a larger diameter than the antenna surface, and a step surface formed between the antenna surface and the diameter-expanded surface,

[1046] the reflective film is formed over the antenna surface and the step surface.

[1047] (Paragraph 99)

[1048] the terahertz device according to any one of Paragraphs 96 to 98,

[1049] the substrate has a mounting back surface opposite to the mounting main surface,

[1050] the terahertz device has a reflection-reducing film that reduces reflection of electromagnetic waves, the reflection-reducing film being formed in at least a portion of a portion of the mounting back surface that overlaps the conductive member as viewed from a direction opposite to a direction in which the substrate and the antenna substrate face each other.

[1051] (Paragraph 100)

[1052] the terahertz device according to any one of Paragraphs 65 to 99,

[1053] a conductive member connected to the terahertz element is provided in the substrate,

[1054] an opening portion that overlaps at least a portion of the reflective film as viewed from a direction opposite to a direction in which the substrate and the antenna substrate face each other is formed in the conductive member.

[1055] (Paragraph 101)

[1056] the terahertz device according to Paragraph 100,

[1057] The conductive member has a first conductive portion and a second conductive portion disposed opposite each other with a gap therebetween.

[1058] The opening portion includes the gap between the first conductive portion and the second conductive portion.

[1059] (Paragraph 102)

[1060] The terahertz device according to Paragraph 101,

[1061] The opening portion has:

[1062] a first partial opening portion, which is formed in the first conductive portion in a portion overlapping the reflective film from the opposite direction, and which communicates with the gap; and

[1063] a second partial opening portion, which is formed in the second conductive portion in a portion overlapping the reflective film from the opposite direction, and which communicates with the gap.

[1064] (Paragraph 103)

[1065] The terahertz device according to Paragraph 102,

[1066] The first conductive portion has a first connection portion for electrically connecting with the terahertz element,

[1067] The first connection portion protrudes toward the terahertz element from a first inner wall surface that is an inner wall surface of the first partial opening portion,

[1068] The second conductive portion has a second connection portion for electrically connecting with the terahertz element,

[1069] The second connection portion protrudes toward the terahertz element from a second inner wall surface that is an inner wall surface of the second partial opening portion.

[1070] (Paragraph 104)

[1071] The terahertz device according to Paragraph 103,

[1072] has a first lead wire connecting a first pad formed in the terahertz element and the first connection portion,

[1073] The protruding dimension of the first connection portion from the first inner wall surface is shorter than the length of the first lead wire from the opposite direction.

[1074] (Paragraph 105)

[1075] The terahertz device according to Paragraph 104,

[1076] has a second lead wire connecting a second pad formed in the terahertz element and the second connection portion,

[1077] The protruding dimension of the second connecting portion from the second inner wall surface is shorter than the length of the second lead wire as viewed from the relative direction.

[1078] (Paragraph 106)

[1079] The terahertz device as recited in Paragraph 103,

[1080] The first lead wire connects the first pad formed in the terahertz element and the first connecting portion,

[1081] The length of the first lead wire is shorter than the protruding dimension of the first connecting portion from the first inner wall surface as viewed from the relative direction.

[1082] (Paragraph 107)

[1083] The terahertz device as recited in Paragraph 106,

[1084] The second lead wire connects the second pad formed in the terahertz element and the second connecting portion,

[1085] The length of the second lead wire is shorter than the protruding dimension of the second connecting portion from the second inner wall surface as viewed from the relative direction.

[1086] (Paragraph 108)

[1087] The terahertz device as recited in any one of Paragraphs 103 to 107,

[1088] The first connecting portion and the second connecting portion are arranged opposite to each other via the terahertz element.

[1089] (Paragraph 109)

[1090] The terahertz device as recited in any one of Paragraphs 103 to 107,

[1091] The first connecting portion and the second connecting portion are arranged in parallel.

[1092] (Paragraph 110)

[1093] The terahertz device as recited in any one of Paragraphs 96 to 109,

[1094] The conductive member is constituted by a lead frame,

[1095] The substrate is mounted to the lead frame.

[1096] (Paragraph 111)

[1097] The terahertz device as recited in Paragraph 110,

[1098] The substrate is a plate thinner than the thickness of the lead frame.

[1099] (Paragraph 112)

[1100] The terahertz device according to any one of paragraphs 96 to 109,

[1101] The substrate is a support substrate,

[1102] The conductive member includes a wiring pattern formed on the support substrate.

[1103] (Paragraph 113)

[1104] The terahertz device according to paragraph 75,

[1105] The lead frame is the substrate,

[1106] The lead frame includes:

[1107] A mounting substrate on which the terahertz element is mounted;

[1108] A first connection portion that is a portion connected to the mounting substrate, and that is electrically connected to a first pad formed on the terahertz element via a first lead wire; and

[1109] A second connection portion that is insulated from the first connection portion, and that is electrically connected to a second pad formed on the terahertz element via a second lead wire.

[1110] (Paragraph 114)

[1111] The terahertz device according to paragraph 75,

[1112] The substrate includes:

[1113] A mounting main surface on which the terahertz element is mounted; and

[1114] A mounting back surface on the opposite side of the mounting main surface,

[1115] The antenna substrate is provided on the mounting back surface side,

[1116] The terahertz element opposes the reflective film via the substrate.

[1117] (Paragraph 115)

[1118] The terahertz device according to paragraph 75,

[1119] The antenna substrate is a convex lens shape that is curved in a convex manner toward a direction away from the terahertz element,

[1120] The antenna surface corresponds to a lens surface of the antenna substrate.

[1121] (Paragraph 116)

[1122] The terahertz device as described in Paragraph 115,

[1123] The substrate has:

[1124] a mounting main surface on which the terahertz element is mounted; and

[1125] a mounting back surface on the opposite side of the mounting main surface,

[1126] The antenna substrate is disposed on the mounting back surface side of the substrate,

[1127] The terahertz element opposes the reflective film via the substrate and the antenna substrate.

[1128] (Paragraph 117)

[1129] A terahertz device includes:

[1130] a substrate;

[1131] a terahertz element mounted on the substrate that receives electromagnetic waves;

[1132] an antenna substrate having an antenna surface disposed in a position opposing the substrate;

[1133] a reflective film formed on the antenna surface that reflects incident electromagnetic waves toward the terahertz element; and

[1134] an electrode for electrical connection with the outside,

[1135] The electrode protrudes laterally with respect to the antenna substrate as viewed from a direction in which the substrate opposes the antenna substrate.

[1136] (Paragraph 118)

[1137] The terahertz device as described in Paragraph 117,

[1138] The electrode is disposed biased toward the substrate side than a central portion of the direction in which the substrate opposes the terahertz device.

[1139] (Paragraph 119)

[1140] The terahertz device as described in Paragraph 117 or 118,

[1141] The electrode is composed of a lead frame.

[1142] (Paragraph 120)

[1143] The terahertz device as recited in

[1144] The electrode includes a slanted portion slanted in a direction away from the substrate as it is away from the antenna base.

[1145] (Paragraph 121)

[1146] The terahertz device as recited in

[1147] The electrode is crank-shaped.

[1148] (Paragraph 122)

[1149] The terahertz device as recited in

[1150] The substrate is a support substrate,

[1151] The support substrate has an extension portion protruding laterally more than the antenna base as viewed from the opposite direction,

[1152] The electrode is composed of a wiring pattern formed on the extension portion.

[1153] (Paragraph 123)

[1154] The terahertz device as recited in

[1155] The substrate has a mounting main surface on which the terahertz element is mounted, and a mounting back surface on the opposite side from the mounting main surface,

[1156] The terahertz device has:

[1157] a connection pattern connected to the terahertz element, and the connection pattern is a wiring pattern formed at a position apart from the electrode in the mounting main surface;

[1158] a back surface pattern which is a wiring pattern formed on the mounting back surface; and

[1159] a through hole connecting the connection pattern and the electrode to the back surface pattern by penetrating the support substrate,

[1160] The end of the reflective film is disposed apart from the connection pattern and the electrode as viewed from the opposite direction.

[1161] (Paragraph 124)

[1162] The terahertz device as recited in any one of

[1163] The terahertz element includes:

[1164] an element main surface having a receiving point that receives an electromagnetic wave; and

[1165] an element back surface opposite to the element main surface,

[1166] the reflection film is disposed closer to the element main surface than to the element back surface.

[1167] (Paragraph 125)

[1168] the terahertz device according to Paragraph 124,

[1169] the terahertz element is an element that receives an electromagnetic wave over a range of an opening angle with respect to the receiving point,

[1170] the reflection film is formed over an angle of the opening angle or more with respect to the receiving point.

[1171] (Paragraph 126)

[1172] the terahertz device according to Paragraph 124 or 125,

[1173] the reflection film is a parabolic antenna shape.

[1174] (Paragraph 127)

[1175] the terahertz device according to Paragraph 126,

[1176] the reflection film is disposed such that a focal point of the reflection film is located at the receiving point.

[1177] (Paragraph 128)

[1178] the terahertz device according to Paragraph 126,

[1179] a center point of the reflection film coincides with the receiving point, as viewed from a direction opposite to a direction in which the substrate and the antenna base face each other.

[1180] (Paragraph 129)

[1181] the terahertz device according to any one of Paragraphs 126 to 128,

[1182] the reflection film is disposed at a position corresponding to a frequency of an electromagnetic wave received by the terahertz element, in a manner that the reflection film resonates with the electromagnetic wave.

[1183] (Paragraph 130)

[1184] the terahertz device according to Paragraph 126,

[1185] the terahertz element is disposed at a position in which a center point of the reflection film and the receiving point are misaligned, as viewed from a direction opposite to a direction in which the substrate and the antenna base face each other.

[1186] The terahertz device according to any one of the above

[1187] The terahertz device according to any one of the above

[1188] The above-mentioned reflective film is in an electrically floating state.

[1189] The terahertz device according to any one of the above

[1190] The terahertz device according to any one of the above

[1191] The above-mentioned antenna base is formed of an insulating material.

[1192] The terahertz device according to any one of the above

[1193] The above-mentioned substrate is disposed at a position opposite to the above-mentioned reflective film and is formed of a material that transmits electromagnetic waves.

[1194] The terahertz device according to any one of the above

[1195] The terahertz device according to the above

[1196] The above-mentioned substrate is formed of a dielectric body.

[1197] The terahertz device according to any one of the above

[1198] The terahertz device according to any one of the above

[1199] The above-mentioned substrate has a mounting main surface on which the above-mentioned terahertz element is mounted,

[1200] The above-mentioned antenna base has:

[1201] a base main surface opposite to the above-mentioned mounting main surface; and

[1202] a recessed portion recessed from the above-mentioned base main surface and having the above-mentioned antenna surface,

[1203] The above-mentioned terahertz element and the above-mentioned reflective film are disposed in a housing space divided by the above-mentioned mounting main surface and the above-mentioned antenna surface.

[1204] The terahertz device according to any one of the above

[1205] The terahertz device according to the above

[1206] The above-mentioned reflective film is formed on the above-mentioned antenna surface, and is not formed on the above-mentioned base main surface.

[1207] The terahertz device according to any one of the above

[1208] The terahertz device according to any one of the above

[1209] The antenna substrate has a housing recess provided separately from the recess, which houses a protection diode connected in parallel with the terahertz element.

[1210] (Paragraph 138)

[1211] The terahertz device according to any one of paragraphs 135 to 137,

[1212] a conductive member provided on the mounting main surface and connected to the terahertz element, and

[1213] a bonding layer provided between the antenna substrate and the conductive member and bonding the antenna substrate and the conductive member,

[1214] The bonding layer is formed of an insulating material and is present between the reflective film and the conductive member.

[1215] (Paragraph 139)

[1216] The terahertz device according to paragraph 138,

[1217] has an insulating spacer provided separately from the bonding layer between the reflective film and the conductive member.

[1218] (Paragraph 140)

[1219] The terahertz device according to any one of paragraphs 138 or 139,

[1220] The recess has a diameter-expanded surface having a larger diameter than the antenna surface, and a stepped surface formed between the antenna surface and the diameter-expanded surface,

[1221] The reflective film is formed over the antenna surface and the stepped surface.

[1222] (Paragraph 141)

[1223] The terahertz device according to any one of paragraphs 138 to 140,

[1224] The substrate has a mounting back surface opposite to the mounting main surface,

[1225] The terahertz device has a reflection-reducing film that reduces reflection of electromagnetic waves, which is formed at least in part of a portion of the mounting back surface overlapping with the conductive member as viewed from the opposite direction of the substrate and the antenna substrate.

[1226] (Paragraph 142)

[1227] The terahertz device according to any one of paragraphs 117 to 141,

[1228] The conductive member is provided on the substrate and connected to the terahertz element,

[1229] The conductive member has an opening portion overlapping at least a part of the reflecting film as viewed from the opposite direction of the substrate to the antenna base.

[1230] (Paragraph 143)

[1231] The terahertz device according to Paragraph 142,

[1232] The conductive member has a first conductive portion and a second conductive portion arranged opposite to each other with a gap therebetween,

[1233] The opening portion includes the gap between the first conductive portion and the second conductive portion.

[1234] (Paragraph 144)

[1235] The terahertz device according to Paragraph 143,

[1236] The opening portion includes:

[1237] a first partial opening portion communicating with the gap and formed in a portion of the first conductive portion overlapping the reflecting film as viewed from the opposite direction; and

[1238] a second partial opening portion communicating with the gap and formed in a portion of the second conductive portion overlapping the reflecting film as viewed from the opposite direction.

[1239] (Paragraph 145)

[1240] The terahertz device according to Paragraph 144,

[1241] The first conductive portion has a first connecting portion for electrically connecting to the terahertz element,

[1242] The first connecting portion protrudes toward the terahertz element from a first inner wall surface as an inner wall surface of the first partial opening portion,

[1243] The second conductive portion has a second connecting portion for electrically connecting to the terahertz element,

[1244] The second connecting portion protrudes toward the terahertz element from a second inner wall surface as an inner wall surface of the second partial opening portion.

[1245] (Paragraph 146)

[1246] The terahertz device according to Paragraph 145,

[1247] has a first lead wire connecting a first pad formed in the terahertz element and the first connecting portion,

[1248] The first connecting portion has a protruding dimension from the first inner wall surface that is shorter than a length of the first lead wire, as viewed from the relative direction.

[1249] (Paragraph 147)

[1250] The terahertz device according to any one of Paragraphs 145 to 146,

[1251] has a second lead wire that connects a second pad formed in the terahertz element and the second connecting portion,

[1252] The second connecting portion has a protruding dimension from the second inner wall surface that is shorter than a length of the second lead wire, as viewed from the relative direction.

[1253] (Paragraph 148)

[1254] The terahertz device according to any one of Paragraphs 145 to 147,

[1255] has a first lead wire that connects a first pad formed in the terahertz element and the first connecting portion,

[1256] The first lead wire has a length that is shorter than a protruding dimension of the first connecting portion from the first inner wall surface, as viewed from the relative direction.

[1257] (Paragraph 149)

[1258] The terahertz device according to any one of Paragraphs 145 to 148,

[1259] has a second lead wire that connects a second pad formed in the terahertz element and the second connecting portion,

[1260] The second lead wire has a length that is shorter than a protruding dimension of the second connecting portion from the second inner wall surface, as viewed from the relative direction.

[1261] (Paragraph 150)

[1262] The terahertz device according to any one of Paragraphs 145 to 149,

[1263] The first connecting portion and the second connecting portion are arranged in opposition across the terahertz element.

[1264] (Paragraph 151)

[1265] The terahertz device according to any one of Paragraphs 145 to 149,

[1266] The first connecting portion and the second connecting portion are arranged in parallel.

[1267] (Paragraph 152)

[1268] The terahertz device according to any one of the supplementary notes 138 to 151,

[1269] The conductive member is composed of a lead frame,

[1270] The substrate is mounted to the lead frame.

[1271] (Supplementary Note 153)

[1272] The terahertz device according to the supplementary note 152,

[1273] The substrate is a plate-shaped member thinner than the thickness of the lead frame.

[1274] (Supplementary Note 154)

[1275] The terahertz device according to any one of the supplementary notes 138 to 151,

[1276] The substrate is a support substrate,

[1277] The conductive member includes a wiring pattern formed on the support substrate.

[1278] (Supplementary Note 155)

[1279] The terahertz device according to the supplementary note 117,

[1280] The lead frame is the substrate,

[1281] The lead frame includes:

[1282] A mounting substrate on which the terahertz element is mounted;

[1283] A first connection portion that is a portion connected to the mounting substrate, and that is electrically connected to a first pad formed on the terahertz element via a first lead wire,

[1284] A second connection portion that is insulated from the first connection portion, and that is electrically connected to a second pad formed on the terahertz element via a second lead wire.

[1285] (Supplementary Note 156)

[1286] The terahertz device according to the supplementary note 117,

[1287] The substrate has:

[1288] A mounting main surface on which the terahertz element is mounted; and

[1289] A mounting back surface on the opposite side of the mounting main surface,

[1290] The antenna substrate is provided on the mounting back surface side,

[1291] The terahertz element and the reflecting film face each other with the substrate therebetween.

[1292] (Paragraph 157)

[1293] The terahertz device according to Paragraph 117,

[1294] The antenna base is a convex lens shape curved in a convex manner toward a direction away from the terahertz element,

[1295] The antenna surface corresponds to the lens surface of the antenna base.

[1296] (Paragraph 158)

[1297] The terahertz device according to Paragraph 157,

[1298] The substrate has:

[1299] a mounting main surface on which the terahertz element is mounted; and

[1300] a mounting back surface on the opposite side of the mounting main surface,

[1301] The antenna base is provided on the mounting back surface side of the substrate,

[1302] The terahertz element and the reflecting film face each other with the substrate and the antenna base therebetween.

[1303] (Paragraph 159)

[1304] The antenna base can also have a housing recess provided separately from the recess, the housing recess housing a specific element electrically connected to the terahertz element.

[1305] (Paragraph 160)

[1306] The specific element can be an IC.

[1307] (Paragraph 161)

[1308] A terahertz device includes:

[1309] a substrate;

[1310] a terahertz element mounted to the substrate, the terahertz element generating electromagnetic waves;

[1311] an antenna base having an antenna surface, the antenna base provided at a position opposite the substrate; and

[1312] a reflecting film formed on the antenna surface, the reflecting film reflecting at least a portion of the electromagnetic waves generated from the terahertz element in one direction.

[1313] (Paragraph 162)

[1314] A terahertz device includes:

[1315] A substrate;

[1316] A terahertz element receiving electromagnetic waves mounted on the substrate;

[1317] An antenna base having an antenna surface provided at a position opposite to the substrate; and

[1318] A reflection film formed on the antenna surface to reflect the incident electromagnetic waves toward the terahertz element.

[1319] (Paragraph 163)

[1320] A terahertz device includes:

[1321] A terahertz element generating electromagnetic waves;

[1322] A substrate having a reflection portion opposite to the terahertz element and reflecting at least a portion of the electromagnetic waves generated by the terahertz element;

[1323] An antenna base having an antenna surface provided at a position opposite to the substrate;

[1324] A reflection film formed on the antenna surface to reflect at least a portion of the electromagnetic waves reflected by the reflection portion in one direction.

[1325] (Paragraph 164)

[1326] A terahertz device includes:

[1327] A terahertz element receiving electromagnetic waves;

[1328] A substrate having a reflection portion opposite to the terahertz element and reflecting at least a portion of the incident electromagnetic waves toward the terahertz element;

[1329] An antenna base having an antenna surface provided at a position opposite to the substrate; and

[1330] A reflection film formed on the antenna surface to reflect at least a portion of the incident electromagnetic waves toward the reflection portion.

[1331] (Paragraph 165)

[1332] The antenna base can also have a housing recess provided separately from the recess, the housing recess housing a specific element electrically connected to the terahertz element.

[1333] (Paragraph 166)

[1334] It is also possible to have a specific element mounted to the mounting back surface in an electrically connected state with the above-described terahertz element.

[1335] (Addendum 167)

[1336] The above-described specific element can be an IC.

Claims

1. A terahertz device, characterized by, comprising: a substrate; a terahertz element generating an electromagnetic wave mounted to the substrate; an antenna base having an antenna surface provided at a position opposite to the substrate; and a reflecting film formed on the antenna surface to reflect at least a part of the electromagnetic wave generated from the terahertz element in one direction, the antenna base having: a base main surface opposite to the substrate; a base back surface on the opposite side of the base main surface; and a base side surface facing a lateral direction, the terahertz device having an electrode for electrical connection with the outside, the electrode having: a side surface electrode formed on the base side surface; and a back surface electrode formed on the base back surface.

2. The terahertz device according to claim 1, wherein: the electrode is composed of a lead frame bent along the antenna base.

3. The terahertz device according to claim 2, wherein: the electrode has: a base end portion bent at an angle portion of the base side surface and the base main surface in a manner to face the base side surface; a bent portion bent at an angle portion of the base side surface and the base back surface; and a front end portion disposed on the base back surface, the side surface electrode is a portion from the base end portion to the bent portion, the back surface electrode is a portion from the bent portion to the front end portion. comprising: a substrate; a terahertz element generating an electromagnetic wave mounted to the substrate; 4. A terahertz device, characterized by, an antenna base having an antenna surface provided at a position opposite to the substrate; and a reflecting film formed on the antenna surface to reflect at least a part of the electromagnetic wave generated from the terahertz element in one direction, the terahertz element comprising: an element main surface having an oscillation point generating an electromagnetic wave; an element back surface on the opposite side of the element main surface, the reflecting film being disposed on the element main surface side more than the element back surface.

5. The terahertz device according to claim 4, wherein: the terahertz element is an element radiating an electromagnetic wave from the oscillation point in a radial manner over an opening angle range, the reflecting film is formed over an angle of more than the opening angle with respect to the oscillation point.

6. The terahertz device according to claim 4, wherein: the reflecting film is a parabolic antenna shape.

7. The terahertz device according to claim 6, wherein: the reflecting film is disposed in a manner that a focal point of the reflecting film is located at the oscillation point.

8. The terahertz device according to claim 6, wherein: a center point of the reflecting film coincides with the oscillation point as viewed from a direction opposite to the substrate and the antenna base.

9. The terahertz device according to claim 6, wherein: the reflecting film is disposed at a position corresponding to a frequency of the electromagnetic wave generated from the terahertz element in a manner to resonate the electromagnetic wave.

10. The terahertz device according to claim 6, wherein: the terahertz element is disposed at a position where a center point of the reflecting film is misaligned with the oscillation point as viewed from a direction opposite to the substrate and the antenna base.

11. The terahertz device according to any one of claims 1 to 10, wherein: the reflecting film is in an electrically floating state. comprising: a substrate; ​ ​ 12. A terahertz device, characterized by, ​ ​ a terahertz element that generates electromagnetic waves, mounted to the substrate; an antenna base having an antenna surface, provided at a position opposite to the substrate; and a reflection film that reflects at least a part of the electromagnetic waves generated from the terahertz element in one direction, formed on the antenna surface. The antenna base is formed of an insulating material.

13. The terahertz device according to any one of claims 1 to 10 and 12, wherein: the substrate is provided at a position opposite to the reflection film, and is formed of a material that transmits electromagnetic waves.

14. The terahertz device according to claim 13, wherein: the substrate is formed of a dielectric body. including:

15. A terahertz device, characterized by, a substrate; a terahertz element that generates electromagnetic waves, mounted to the substrate; an antenna base having an antenna surface, provided at a position opposite to the substrate; and a reflection film that reflects at least a part of the electromagnetic waves generated from the terahertz element in one direction, formed on the antenna surface. the substrate has a mounting main surface on which the terahertz element is mounted, the antenna base has: a base main surface opposite to the mounting main surface; and a recessed portion having the antenna surface, recessed from the base main surface, the terahertz element and the reflection film are disposed in an accommodation space divided by the mounting main surface and the antenna surface.

16. The terahertz device according to claim 15, wherein: the reflection film is formed on the antenna surface, and is not formed on the base main surface.

17. The terahertz device according to claim 15, wherein: the antenna base has an accommodation recess portion provided separately from the recessed portion, the accommodation recess portion accommodating a protection diode connected in parallel with the terahertz element.

18. The terahertz device according to any one of claims 15 to 17, wherein: a conductive member provided on the mounting main surface and connected to the terahertz element; and a bonding layer provided between the antenna base and the conductive member, and bonding the antenna base and the conductive member, the bonding layer is formed of an insulating material, and is present between the reflection film and the conductive member.

19. The terahertz device according to claim 18, wherein: an insulating spacer is provided separately from the bonding layer, between the reflection film and the conductive member. ​ ​

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