Mask device and method for manufacturing the same

Abstract

The present invention discloses a mask device and a preparation method thereof. The mask device of the present invention comprises a mask frame and a mask body; the mask frame has a mask surface and a mask bottom surface, the inner wall of the mask frame has a concave platform structure for supporting the mask body, the mask body has a hollow coating area, the mask body has a first surface and a second surface, the second surface has a drainage buffer groove, the second surface has a second coating, the mask body cooperates with the concave platform structure and is connected to the mask frame, the second surface contacts and cooperates with the concave platform structure, the first surface and the mask surface are in the same direction, and the first surface and / or the mask surface have a first coating. The mask device of the present invention can greatly reduce the deposition of reactants on the substrate, has high masking capacity, and reduces the shadow effect in atomic layer deposition technology.

Description

Technical Field

[0001] The present invention relates to the display field, and in particular to a mask device and a preparation method thereof. Background Art

[0002] In the current semiconductor and display device manufacturing, ALD (atomic layer deposition) technology has become one of the most ideal methods for depositing thin film materials due to its low temperature, high-density thin film, deposition uniformity, good repeatability, and a wide range of deposited thin films. In the TFT process, ALD technology can deposit active layers (amorphous silicon, IGZO, polycrystalline silicon), inorganic insulating layers, and passivation layers; in the OLED packaging process, ALD technology can deposit water and oxygen barrier layers for thin film packaging. When ALD technology is used to deposit water and oxygen barrier layers, they are usually insulating films, such as aluminum oxide, zinc oxide, zirconium oxide, magnesium oxide, silicon oxide, silicon nitride, and their composite materials. These insulating films are covered on OLED devices (usually metal electrodes or protective layers), which can effectively block the intrusion of water and oxygen in the external environment, prevent OLED devices from failing, and reduce their lifespan. However, a display device includes not only an OLED device, but also a circuit area, which is used to connect an external power supply and a signal. The edge of the substrate where the integrated chip or the flexible integrated circuit board needs to be bound to the display device is called the bonding area. The circuit on this bonding area needs to be exposed to achieve a good electrical connection with the integrated chip or the flexible integrated circuit board. Therefore, when using the ALD technology to deposit the water-oxygen barrier layer, it is necessary to control the deposition range of the water-oxygen barrier layer so that the water-oxygen barrier layer does not cover the binding area. However, the ALD technology is used to deposit the water-oxygen barrier layer on the entire surface, so it is necessary to add a mask to the substrate of the display device to prevent the water-oxygen barrier layer from being deposited in the binding area. The mask includes a frame and a thin sheet, wherein the frame plays a supporting role, the frame contacts the table that carries the substrate, and the thin sheet is embedded on the edge of the frame. The rigidity of the frame and the thin sheet itself is used to make the thin sheet and the edge of the frame almost on the same horizontal plane. The role of the thin sheet is to block the reactants generated by the ALD process by placing it above the display device, so that the reactants of the ALD will not be deposited on the blocked part, thereby playing the role of a mask.

[0003] The commonly used packaging solution in the prior art is to contact the frame of the mask plate with the platen in the ALD chamber, and adjust the gap height between the thin sheet of the mask plate and the platen by changing the thickness of the pad on the platen. The gap height should be controlled within the thickness range of the display device. For example, when the thickness of the display device is 0.5mm, the gap height should be controlled at 0.5mm. In this way, the thin sheet can better contact the display device and block the ALD reactants from being deposited in the masked area; when the gap height is too large, the ALD reactants are easily deposited in the gap between the thin sheet and the platen, so that the reactants are actually deposited in the masked area; when the gap height is too small, it is easy to be lifted up by the display device to cause deformation, and it is also easy to deposit unnecessary reactants in the gap, resulting in a shadow effect (the shadow effect refers to the fact that reactants are still deposited on the substrate in places where they should not be deposited). Further, when packaging, the edge of the display device used to connect the integrated chip or the flexible integrated circuit board must be far away from the packaging area, so that the display device cannot be made into a narrow frame, affecting the display effect. Summary of the invention

[0004] Based on this, it is necessary to provide a mask device and a method for manufacturing the same. The mask device of the present invention can greatly reduce the deposition of reactants on the substrate, has high masking capability, and reduces the shadow effect in the atomic layer deposition technology.

[0005] A mask device comprises a mask frame and a mask body; the mask frame has a mask surface and a mask bottom surface, the inner wall of the mask frame has a concave platform structure for supporting the mask body, the mask body has a hollow coating area, the mask body has a first surface and a second surface, the second surface has a drainage buffer groove, the second surface has a second coating, the mask body is matched with the concave platform structure and connected to the mask frame through a part of the second surface, the first surface and the mask surface are oriented in the same direction, and the first surface and / or the mask surface have a first coating.

[0006] In one embodiment, the drainage buffer groove is an annular groove surrounding the coating area.

[0007] In one embodiment, the drainage buffer groove gradually narrows from the groove bottom surface to the groove mouth.

[0008] In one of the embodiments, the depth of the drainage buffer groove is 1 / 3 to 1 / 2 of the thickness of the mask body.

[0009] In one embodiment, there are multiple drainage buffer grooves, and there are intervals between adjacent drainage buffer grooves.

[0010] In one embodiment, the first coating is one or more of an electroplated layer, a nano-coating, an organic coating, an oxide layer, and a sputtered coating.

[0011] In one embodiment, the second coating is a hydrophilic coating.

[0012] In one embodiment, the depth of the concave platform structure is equal to the thickness of the mask body, so that the first surface is flush with the mask surface.

[0013] In one embodiment, the width of the concave platform structure is 1-10 mm.

[0014] In one embodiment, the thickness between the first surface and the second surface is 0.05-2 mm.

[0015] In one of the embodiments, the hollow area includes a plurality of hollow sub-areas.

[0016] A method for preparing a mask device comprises the following steps:

[0017] Prepare a mask frame having a hollow area and a concave platform structure surrounding at least a portion of the hollow area;

[0018] Performing a first half-etching process on the first surface of the mask substrate to form a groove, performing a second half-etching process on the second surface of the mask substrate to penetrate the groove to form a hollowed-out coating area, and forming a drainage buffer groove in at least a portion of the non-hollowed-out area of ​​the second surface;

[0019] Preparing a second coating on the second surface and the inner wall of the drainage buffer groove to obtain a mask body;

[0020] Installing the mask body in the mask frame, with the second surface in contact with and matching the concave platform structure, to connect the mask body and the mask frame;

[0021] A first coating is prepared on at least a portion of the non-hollowed-out area of ​​the first surface and / or at least a portion of the mask surface of the mask frame.

[0022] The mask device of the present invention arranges a drainage buffer groove and a second coating on the second surface of the mask body, so that the precursor in the deposition process is preferentially adsorbed in the drainage buffer groove and on the hydrophilic second coating. The arrangement of the drainage buffer groove increases the roughness of the second surface on the one hand, thereby increasing the area for attracting the reaction gas; on the other hand, when the atomic layer deposition gas penetrates into the gap between the mask body and the substrate, more deposition gas is drained into the drainage buffer groove, thereby extending the flow path of the drainage buffer groove, and the buffered deposition gas further invades the non-coated area on the substrate, thereby reducing the formation of a thin film in the non-coated area on the substrate and reducing the shadow effect in the atomic layer deposition technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a front schematic diagram of a mask device according to an embodiment of the present invention;

[0024] Figure 2 for Figure 1 The AA cross-sectional schematic diagram of the mask device shown;

[0025] Figure 3 for Figure 1 A front schematic diagram of a mask frame of a mask device shown;

[0026] Figure 4 for Figure 3 AA cross-sectional schematic diagram of the mask frame shown;

[0027] Figure 5 for Figure 1 A schematic diagram of the front side of the mask body is shown;

[0028] Figure 6 for Figure 5 A schematic diagram of the side structure of the mask body shown;

[0029] Figure 7 It is a schematic diagram of a first half etching process for the first surface of the mask substrate in Example 2;

[0030] Figure 8 for Figure 7 A side schematic diagram of a first half etching process for a first surface of a mask substrate;

[0031] Fig. 9 It is a schematic diagram of a second half etching process for the second surface of the mask substrate in Embodiment 2;

[0032] Fig.10 This is a schematic diagram of the side structure of the mask substrate after the second half etching in Example 2;

[0033] Fig.11 This is a schematic diagram of the second coating process for preparing the second coating in Example 2.

[0034] Description of Reference Numerals

[0035] 10. Mask device; 100. Mask frame; 110. Mask surface; 120. Mask bottom; 130. Concave platform structure; 200. Mask body; 210. First surface; 220. Second surface; 221. Drainage buffer groove; 230. Coating area; 300. First coating; 400. Second coating; 20. Mask substrate; 21. Groove. DETAILED DESCRIPTION

[0036] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0037] Please also read Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a mask device 10.

[0038] A mask device 10 includes a mask frame 100 and a mask body 200 .

[0039] See also Figure 3 , Figure 4 As shown, the mask frame 100 has a mask surface 110 and a mask bottom 120. When in use, the mask surface 110 faces upward, and the mask bottom 120 faces downward and contacts the stage that carries the substrate. The mask frame 100 is an annular structure. The inner wall of the mask frame 100 has a concave stage structure 130 for supporting the mask body 200.

[0040] See also Figure 3As shown, the mask frame 100 as a whole can be a metal frame, and the material of the mask frame 100 can be aluminum, steel, iron, chromium, nickel, copper and alloys thereof. Preferably, the material of the mask frame 100 is aluminum alloy. Aluminum alloy has low cost, and can reduce the cost of the mask frame 100 when used to prepare the mask frame 100. In addition, the mask frame 100 made of the material of the mask frame 100 has strong adhesion to the first coating 300 and the second coating 400, and has better bonding. Further preferably, the edges and corners of the mask frame 100 are chamfered or smoothly transitioned. The chamfered design of the edges and corners of the mask frame 100 is conducive to the mask frame 100 not being easy to scratch other parts of the thin film deposition machine when it moves in the thin film deposition machine. More importantly, if the mask device 10 including the above-mentioned mask frame 100 is applied to a device that generates plasma, such as PECVD, PEALD, etc., the edges and corners of the mask frame 100 are chamfered or smoothly transitioned to prevent excessive accumulation of plasma in these places, thereby preventing the hazards of plasma discharge.

[0041] See also Figure 5 As shown, the mask body 200 has a hollowed-out coating area 230. The mask body 200 has a first surface 210 and a second surface 220. At least part of the second surface 220 has a drainage buffer groove 221, and the plurality of drainage buffer grooves 221 form a microstructure in a part of the second surface 220. The provision of the drainage buffer groove 221 increases the roughness of the second surface 220, thereby increasing the area for attracting the reaction gas; on the other hand, when the atomic layer deposition gas enters the gap between the mask body 200 and the substrate, more deposition gas is drained into the drainage buffer groove 221, extending the flow path of the drainage buffer groove 221, and the buffer deposition gas further invades the non-coating area 230 on the substrate, reducing the formation of a thin film in the non-coating area on the substrate, and reducing the shadow effect in the atomic layer deposition technology.

[0042] See also Figure 5 As shown, the mask body 200 is a metal sheet frame as a whole, and the material of the mask body 200 is generally aluminum, steel, iron, chromium and alloys thereof. Preferably, the material of the mask body 200 is Invar steel, which has good mechanical properties and very small thermal deformation. The mask body 200 made of Invar steel can be used in thin film deposition equipment with high process temperatures. The function of the mask body 200 is to control the range of deposited thin films and to prevent thin films from being deposited in areas where deposition is not required. The mask body 200 uses its own thin characteristics to better control its flatness and ensure the gap between the mask body 200 and the substrate, thereby ensuring that the thin film is only deposited in the coating area 230 on the substrate, that is, deposited on the substrate that is not blocked by the mask body 200.

[0043] See also Figure 6 As shown, the second surface 220 has a second coating 400. The second coating 400 is a hydrophilic coating. The second coating 400 can efficiently adsorb the precursor gas introduced during atomic layer deposition, thereby reducing the amount of the precursor gas further invading the non-coating area 230, thereby achieving the purpose of improving the shadow effect.

[0044] See also Figure 2 As shown, the mask body 200 is matched with the concave platform structure 130 and connected to the mask frame 100. The second surface 220 is in contact with the concave platform structure 130. The first surface 210 is in the same direction as the mask surface 110. The first surface 210 and / or the mask surface 110 has a first coating 300 thereon.

[0045] In one embodiment, the drainage buffer groove 221 is an annular groove surrounding the coating area 230 .

[0046] In one embodiment, see Figure 6 As shown, the drainage buffer groove 221 gradually narrows from the groove bottom to the notch, that is, the internal size of the drainage buffer groove 221 is larger than the size of the notch, so that more deposition gas can be drained into the drainage buffer groove 221, further extending the flow path of the drainage buffer groove 221. Preferably, the longitudinal section of the drainage buffer groove 221 is approximately trapezoidal, so that the deposition gas can continue to flow back and forth in the drainage buffer groove 221 after entering the drainage buffer groove 221, thereby maximizing the effect of the buffer gas.

[0047] In one embodiment, the depth of the drainage buffer groove 221 is 1 / 3 to 1 / 2 of the thickness of the mask body 200 .

[0048] In one embodiment, see Figure 6 As shown, there are multiple drainage buffer grooves 221 , and there are intervals between adjacent drainage buffer grooves 221 .

[0049] In one embodiment, the second coating 400 is a hydrophilic coating. For example, the material of the second coating 400 is selected from titanium oxide, zinc oxide, tin oxide, silicon oxide, polydimethyldienyl ammonium chloride perfluorooctanoic acid (PDDA-PFO) and mixtures thereof. Preferably, the second coating 400 is a titanium oxide coating. During preparation, a sputtering method or a sol-gel method can be used to prepare a titanium oxide coating on the second surface 220 and all inner walls of the drainage buffer tank 221, and then after UV light treatment, a super-hydrophilic titanium oxide coating is obtained. In another preferred embodiment, the second coating 400 is a silicon oxide sputtering coating. The silicon oxide sputtering coating has a simple preparation method, a mature process, and a low cost. The surface of the silicon oxide sputtering coating has a relatively ideal density of hydrophilic group hydroxide (-OH), which can effectively adsorb the precursor gas introduced during atomic layer deposition.

[0050] In one embodiment, the first coating 300 is one or more of an electroplated coating, a nano coating, an organic coating, an oxide layer, and a sputtered coating. For example, the material of the first coating 300 can be a cobalt or nickel electroplated coating, a magnesium or aluminum electroplated layer and a surface-modified coating, a nano coating such as fluorinated asphalt, n-dodecyl mercaptan, and an organic oxygen silane, an organic coating such as polytetrafluoroethylene and polyvinylidene fluoride, an anodic oxide layer such as aluminum oxide and zirconium oxide, and a plasma arc sputtered coating. Preferably, the first coating 300 is an aluminum oxide sputtered coating, and the cost, roughness, density, and insulation of the aluminum oxide sputtered coating are easy to control. The function of the first coating 300 is to protect the mask frame 100 and the mask body 200 from being corroded and damaged by the deposited film or the environment (gas, plasma, electric field particle bombardment, etc.) in which the film is deposited. In addition, the first coating 300 has an insulating property, which can prevent the mask device 10 from forming a charge concentration point that is easy to discharge in a plasma thin film deposition environment, and also has the function of protecting the mask frame 100 and the thin film deposition equipment.

[0051] In one embodiment, both the first surface 210 and the mask surface 110 have a first coating 300. The first coating 300 is used to protect the mask frame 100 and the mask body 200 from being corroded and damaged by the deposited film or the environment in which the film is deposited (gas, plasma, electric field particle bombardment, etc.). On the other hand, its insulation property can prevent the mask from forming charge concentration points that are easy to discharge in the plasma film deposition environment, and also protect the mask and the film deposition equipment.

[0052] In one embodiment, see Figure 2 As shown, the depth of the concave mesa structure 130 is equal to the thickness of the mask body 200 , so that the first surface 210 is flush with the mask surface 110 .

[0053] In one embodiment, the width of the concave platform structure 130 is 1-10 mm.

[0054] In one embodiment, the thickness of the mask body 200, that is, the thickness between the first surface 210 and the second surface 220, is 0.05 to 2 mm. The thinner the thickness of the mask body 200, the smaller the shadow effect produced, but the mask body 200 cannot be too thin. If the mask body 200 is too thin, its service life and intensity uniformity will decrease. Therefore, the thickness of the mask body 200 is selected between 0.05 and 2 mm, for example, the thickness of the mask body 200 is selected to be 0.05 mm, 1 mm, 1.5 mm, 2 mm or other values. The thickness of the mask body 200 can be reasonably set according to the actual application.

[0055] In one embodiment, the hollow area includes a plurality of hollow sub-areas. The area and shape of the hollow area can be set according to the area and shape of the coating area 230 on the substrate. When there is only one hollow area on the mask body 200, it corresponds to a single-area mask mode, which is applied to the case where there is only one display screen on the substrate. When there are multiple display screens on the substrate, multiple hollow sub-areas can be set according to the number of display screens, and the number of hollow sub-areas, the size of the area, and the shape between the areas can correspond to the display screens on the substrate.

[0056] In one embodiment, the mask frame 100 and the mask body 200 are connected by welding.

[0057] An embodiment of the present invention further provides a method for preparing the mask device 10 .

[0058] A method for preparing a mask device 10 comprises the following steps:

[0059] A mask frame 100 having a hollow region and a concave platform structure 130 surrounding at least a portion of the hollow region is prepared, such as Figure 3 shown.

[0060] The first surface 210 of the mask substrate 20 is subjected to a first half etching process to form a groove 21 (eg Figure 7 , Figure 8 The first half etching process refers to performing half etching on the position to be hollowed out on the first surface 210, and the etching depth is less than the thickness of the mask substrate 20. The specific etching depth can be set as needed. The second surface 220 of the mask substrate 20 is subjected to a second half etching process to penetrate the groove 21 to form a hollowed-out coating area 230 (as shown in FIG. Fig. 9 As shown), and a drainage buffer groove 221 is formed in at least a portion of the non-hollowed area of ​​the second surface 220, as shown Fig.10 The first half etching process and the second half etching process can be performed according to a conventional etching process, such as cleaning, coating, pre-curing, exposure, development, etching, post-curing, and degumming.

[0061] A second coating 400 is prepared on the second surface 220 and the inner wall of the drainage buffer groove 221 to obtain the mask body 200, such as Fig.11 shown.

[0062] The mask body 200 is installed in the mask frame 100 , and the second surface 220 is in contact with and matched with the concave platform structure 130 , so as to connect the mask body 200 and the mask frame 100 .

[0063] A first coating 300 is prepared on at least a portion of the non-hollowed-out area of ​​the first surface 210 and / or at least a portion of the mask surface 110 of the mask frame 100, such as Figure 1 and2 shown.

[0064] In one embodiment, the etching rate of the first half etching process is 4000-6000 A / min; and / or the etching rate of the second half etching process is 3000-6000 A / min, wherein the etching rate of the second half etching process is less than the etching rate of the first half etching process.

[0065] In one embodiment, the preparation method of the second coating 400 includes the following steps:

[0066] The coating material is attached to the second surface 220 and the inner wall of the drainage buffer groove 221 by using a sol-gel method or a sputtering physical vapor deposition method.

[0067] In one embodiment, the method for preparing the second coating 400 further includes the following step: subjecting the prepared second coating 400 to UV irradiation for a preset time.

[0068] In one embodiment, the method for preparing the first coating 300 includes the following steps:

[0069] The coating material is attached to the non-hollowed-out area of ​​the first surface 210 and / or the mask surface 110 of the mask frame 100 by sputtering physical vapor deposition.

[0070] In one embodiment, the method for preparing the mask frame 100 includes the following steps:

[0071] The frame substrate is hollowed out to obtain an annular frame having a hollowed-out area, and a concave platform structure 130 surrounding at least a portion of the hollowed-out area is obtained by cutting along the inner edge of one surface of the annular frame.

[0072] Example 1

[0073] This embodiment provides a mask device 10 .

[0074] See also Figure 1 and Figure 2 As shown, a mask device 10 includes a mask frame 100 and a mask body 200 .

[0075] See also Figure 4 As shown, the mask frame 100 has a mask surface 110 and a mask bottom surface 120. When in use, the mask surface 110 faces upward, and the mask bottom surface 120 faces downward and contacts the stage supporting the substrate. Figure 3As shown, the mask frame 100 is an annular structure. The mask frame 100 is a metal frame, and the material of the mask frame 100 is aluminum alloy. The inner wall of the mask frame 100 has a concave platform structure 130 for supporting the mask body 200, and the width of the concave platform structure 130 is 5mm. The edges and corners of the mask frame 100 are chamfered or smoothly transitioned.

[0076] See also Figure 5 As shown, the mask body 200 has a hollow coating area 230. The mask body 200 is a metal sheet frame as a whole, and the material of the mask body 200 is invar steel. The mask body 200 has a first surface 210 and a second surface 220. The second surface 220 has a plurality of drainage buffer grooves 221, which are annular grooves surrounding the coating area 230, and there is a gap between adjacent drainage buffer grooves 221. The plurality of drainage buffer grooves 221 form a microstructure in a part of the second surface 220. The drainage buffer groove 221 gradually narrows from the bottom surface of the groove to the notch, that is, the internal size of the drainage buffer groove 221 is larger than the size of the notch, so that more deposition gas can be drained into the drainage buffer groove 221, further extending the flow path of the drainage buffer groove 221. The depth of the drainage buffer groove 221 is 1 / 2 of the thickness of the mask body 200.

[0077] See also Figure 6 As shown, the second surface 220 has a second coating 400. The second coating 400 is a hydrophilic coating, and the second coating 400 is a titanium oxide coating.

[0078] The mask body 200 is matched with the concave platform structure 130 and connected with the mask frame 100. The second surface 220 is in contact with the concave platform structure 130, and the edge of the mask body 200 abuts against the inner wall of the mask frame 100 located above the concave platform, so that the mask body 200 and the mask frame 100 are seamlessly connected. The first surface 210 is in the same direction as the mask surface 110, and the second surface 220 is in the same direction as the mask bottom surface 120.

[0079] The first surface 210 and the mask surface 110 have a first coating 300. The first coating 300 is an aluminum oxide sputtering coating, and the cost, roughness, density and insulation of the aluminum oxide sputtering coating are easy to control. The function of the first coating 300 is to protect the mask frame 100 and the mask body 200 from being corroded and damaged by the deposited film or the environment in which the film is deposited (gas, plasma, electric field particle bombardment, etc.). In addition, the insulation of the first coating 300 can prevent the mask from forming a charge concentration point that is easy to discharge in the plasma film deposition environment, and also has the function of protecting the mask and the film deposition equipment.

[0080] The thickness of the mask body 200 is 1 mm. The depth of the concave platform structure 130 is equal to the thickness of the mask body 200 , which is also 1 mm, so that the first surface 210 is flush with the mask surface 110 .

[0081] Example 2

[0082] This embodiment provides a method for preparing a mask device 10 .

[0083] A method for preparing a mask device 10 comprises the following steps:

[0084] The frame substrate is hollowed out to obtain an annular frame having a hollow area, and a ring-shaped concave platform structure 130 surrounding the hollow area is obtained by cutting along the inner edge of one surface of the annular frame. Figure 3 and Figure 4 shown.

[0085] The first surface 210 of the mask substrate 20 is subjected to a first half etching process to form a groove 21 (see Figure 7 and Figure 8 The etching rate of the first half etching process is 4000A / min; the first half etching process means that the first surface 210 is half-etched at the position to be hollowed out, and the etching depth is less than the thickness of the mask substrate 20. The second surface 220 is subjected to a second half etching process to penetrate the groove 21 to form a hollowed-out coating area 230, as shown in FIG. Fig. 9 As shown, a drainage buffer groove 221 is formed in the non-hollowed area of ​​the second surface 220, as shown Fig.10 As shown, the etching rate of the second half etching process is 3000A / min. The etching rate of the second half etching process is relatively low, which can enhance the anisotropic etching of the etching solution and produce side etching, thereby obtaining a drainage buffer groove 221 with a trapezoidal longitudinal section.

[0086] The second coating 400 is prepared by attaching titanium oxide to the second surface 220 and the inner wall of the drainage buffer groove 221 by a sol-gel method or a sputtering physical vapor deposition method. The prepared second coating 400 is subjected to UV irradiation for 2 to 10 minutes in air or an O2 environment to increase the hydrophilicity of the second coating 400, thereby obtaining the mask body 200. Fig.11 shown.

[0087] The mask body 200 is installed in the mask frame 100, and the second surface 220 is in contact with the concave platform structure 130, and the mask body 200 and the mask frame 100 are welded. During the welding process, the mask body 200 is stretched to be relatively flat with a certain pulling force, and the welding operation is performed while maintaining the pulling force. The welding area is finely polished to ensure the flatness of the first surface 210 of the mask body 200 and the mask surface 110 of the mask frame 100, to avoid the occurrence of tip discharge at the welding point when the mask device 10 is used in the plasma coating process, and to ensure the quality of the mask.

[0088] Aluminum oxide is attached to the non-hollowed area of ​​the first surface 210 and the mask surface 110 of the mask frame 100 by sputtering physical vapor deposition to prepare the first coating 300, thereby obtaining the mask device 10. Figure 1 , Figure 2 shown.

[0089] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0090] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A mask device, characterized in that: It includes a mask frame and a mask body; the mask frame has a mask surface and a mask bottom surface, the mask frame has a hollow area, the inner wall of the mask frame has a concave platform structure surrounding the hollow area and used to support the mask body, the mask body has a hollow coating area, the mask body has a first surface and a second surface, the second surface has a drainage buffer groove, the drainage buffer groove gradually narrows from the bottom surface of the groove to the groove mouth, the second surface has a second coating, the mask body is matched with the concave platform structure and connected to the mask frame through part of the second surface, the first surface and the mask surface are oriented in the same direction, and the first surface and / or the mask surface have a first coating.

2. The mask device according to claim 1, characterized in that: The drainage buffer groove is an annular groove surrounding the coating area.

3. The mask device according to claim 1, characterized in that: The depth of the drainage buffer groove is 1 / 3 to 1 / 2 of the thickness of the mask body.

4. The mask device according to any one of claims 1 to 3, characterized in that: There are a plurality of drainage buffer grooves, and there are intervals between adjacent drainage buffer grooves.

5. The mask device according to any one of claims 1 to 3, characterized in that: The first coating is one or more of an electroplated layer, a nano coating, an organic coating, an oxide layer and a sputtered coating.

6. The mask device according to any one of claims 1 to 3, characterized in that: The second coating is a hydrophilic coating.

7. The mask device according to any one of claims 1 to 3, characterized in that: The depth of the concave platform structure is equal to the thickness of the mask body, so that the first surface is flush with the mask surface.

8. The mask device according to any one of claims 1 to 3, characterized in that: The width of the concave platform structure is 1 to 10 mm.

9. The mask device according to any one of claims 1 to 3, characterized in that: The thickness between the first surface and the second surface is 0.05-2 mm.

10. The mask device according to any one of claims 1 to 3, characterized in that: The hollow area includes a plurality of hollow sub-areas.

11. A method for preparing a mask device, characterized in that: The steps include: Prepare a mask frame having a hollow area and a concave platform structure surrounding at least a portion of the hollow area; Performing a first half-etching process on the first surface of the mask substrate to form a groove, performing a second half-etching process on the second surface of the mask substrate to penetrate the groove to form a hollowed-out coating area, and forming a drainage buffer groove in at least a portion of the non-hollowed-out area of ​​the second surface, wherein the drainage buffer groove gradually narrows from the bottom surface of the groove to the groove opening; Preparing a second coating on the second surface and the inner wall of the drainage buffer groove to obtain a mask body; Installing the mask body in the mask frame, with the second surface in contact with and matching the concave platform structure, to connect the mask body and the mask frame; A first coating is prepared on at least a portion of the non-hollowed-out area of ​​the first surface and / or at least a portion of the mask surface of the mask frame.

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