Chuck and etching apparatus

Abstract

The present disclosure relates to a chuck and an etching apparatus. A chuck for supporting a target substrate for a display device, wherein the chuck includes a base having a first surface for supporting an object and a second surface opposite to the first surface, the first surface including a first region and a second region; and a recess formed in the second region and recessed from the first region in a thickness direction of the base. The recess includes a first recess extending in a first direction and a second recess extending in a second direction intersecting the first direction.

Description

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2020-0095875, filed on July 31, 2020, which is incorporated herein by reference for all purposes, as if fully set forth herein. Technical Field

[0002] The embodiments of the present invention generally relate to display devices, and more specifically, to electrostatic chucks, etching equipment, and methods of manufacturing display devices. Background Technology

[0003] With the rapid development of information and communication technologies and the expansion of the market, flat panel displays have attracted much attention as display devices.

[0004] Examples of such flat panel displays include liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light-emitting diode (OLED) displays. Among them, OLED displays are attracting much attention as the next generation of display devices due to their highly advantageous characteristics such as fast response speed, lower power consumption than traditional LCDs, light weight, ultra-thin design that eliminates the need for a separate backlight, and high brightness.

[0005] OLED displays can be manufactured using patterning processes, organic thin-film deposition processes, etching processes, encapsulation processes, and bonding processes to bond a substrate with an organic thin film deposited on it to an already encapsulated substrate. Among these various processes, etching is a process that obtains the desired shape by etching away unwanted portions from the surface of the substrate.

[0006] The information disclosed above in this background section is only for understanding the background of the inventive concept, and therefore may contain information that does not constitute prior art. Summary of the Invention

[0007] The applicant discovered that the laser beam used in the etching process during the manufacture of the substrate for the display device could damage the substrate.

[0008] A chuck constructed according to the principles and embodiments of the present invention can reduce damage caused by a laser beam, for example, by forming a recess, which can be in the form of a groove, in a region corresponding to the machining area of ​​the target substrate. More specifically, the groove can be formed on the lower surface of the chuck that overlaps with the machining area of ​​the target substrate, thereby creating a space between the lower surface of the chuck and the machining area of ​​the target substrate. Therefore, the laser beam passing through the target substrate can be reduced in energy as it travels through this space, such as the groove, before reaching the lower surface of the chuck. Accordingly, the laser beam with reduced energy can reach the lower surface of the chuck, or the laser beam may not reach the lower surface of the chuck due to its energy depletion. This energy reduction can reduce damage to the lower surface of the chuck caused by the laser beam, thereby preventing particles from peeling off the chuck from the surface of the target substrate.

[0009] Etching equipment for chucks constructed according to the principles and embodiments of the present invention can reduce damage to the lower surface of electrostatic chucks caused by laser beams.

[0010] Etching apparatuses incorporating chucks constructed according to the principles and embodiments of the present invention can improve the efficiency of the etching process by reducing chuck changeover time, even when performing etching processes on multiple target substrates. For example, multiple holes or grooves extending in one direction are formed on the lower surface of the electrostatic chuck of the etching apparatus. Therefore, even when performing etching processes on various target substrates, the chuck can be removed. Thus, the chuck changeover time can be shortened, thereby improving the efficiency of the etching process.

[0011] Because the lower surface of the chuck is prevented from being damaged by the laser beam, the method for manufacturing a display device according to the principles and embodiments of the present invention can improve the reliability of the etching process of the display device.

[0012] Additional features of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the inventive concept.

[0013] According to one aspect of the invention, a chuck for supporting a target substrate for a display device, wherein the chuck comprises: a substrate having a first surface for supporting an object and a second surface opposite to the first surface, the first surface including a first region and a second region; and a recess formed in the second region and recessed from the first region in the thickness direction of the substrate. The recess includes a first recess extending in a first direction and a second recess extending in a second direction intersecting the first direction.

[0014] The first recess may include a plurality of first grooves along the second direction, and the second recess may include a plurality of second grooves along the first direction.

[0015] The first distance between first grooves that are adjacent to each other in the second direction is configured to be greater than the first width of each first groove in the second direction, and the second distance between second grooves that are adjacent to each other in the first direction is configured to be greater than the second width of each second groove in the first direction.

[0016] The first distance between the first grooves may be different from the second distance between the second grooves.

[0017] The chuck may include an electrostatic chuck, and the substrate may include: a substrate base including a flat region and a recessed region, the recessed region having a third recess corresponding to the recess formed in the second region; a first dielectric layer disposed on a surface of the substrate base; an electrode layer disposed on the first dielectric layer; and a second dielectric layer disposed on the electrode layer.

[0018] The first dielectric layer, the electrode layer, and the second dielectric layer may expose at least a portion of one surface of the substrate in the recessed region.

[0019] The electrode layer may include a first electrode and a second electrode spaced apart from the first electrode. The first electrode and the second electrode may be electrically insulated from each other.

[0020] According to another aspect of the present invention, an etching apparatus for manufacturing a substrate for a display device is provided, wherein the etching apparatus comprises: a vacuum chamber in which an etching process is performed on a target substrate having at least one processing area; a chuck disposed inside the vacuum chamber to support and fix the target substrate to a first surface of the chuck; and a laser module disposed outside the vacuum chamber to irradiate the processing area of ​​the target substrate with a laser beam. The first surface of the chuck includes a first region and a second region having a recess in the thickness direction, and at least a portion of the recess overlaps with the processing area of ​​the target substrate.

[0021] The target substrate can contact the first region of the chuck and can be spaced apart from the second region in the region where the recess is provided.

[0022] The chuck may include an electrostatic chuck, the electrostatic chuck comprising: a substrate including a flat region and a recessed region, the recessed region having a third recess corresponding to the recess formed in the second region; a first dielectric layer disposed on a surface of the substrate; an electrode layer disposed on the first dielectric layer; and a second dielectric layer disposed on the electrode layer.

[0023] The first dielectric layer, the electrode layer, and the second dielectric layer may expose at least a portion of one surface of the substrate in the recessed region.

[0024] The electrode layer may include a first electrode and a second electrode spaced apart from the first electrode. The first electrode and the second electrode may be electrically insulated from each other.

[0025] The target substrate may include multiple unit cells, and each unit cell may include at least one processing area.

[0026] The recess may include grooves formed in a generally grid shape.

[0027] The groove may include a first groove extending in a first direction and a second groove extending in a second direction intersecting the first direction.

[0028] The first groove may include a plurality of first grooves along the second direction, the second groove may include a plurality of second grooves along the first direction, and is configured such that a first distance between first grooves adjacent to each other in the second direction may be greater than a first width of each first groove in the second direction, and a second distance between second grooves adjacent to each other in the first direction may be greater than a second width of each second groove in the first direction.

[0029] The groove may include a plurality of first grooves arranged along a first direction and spaced apart from each other, and a plurality of second grooves arranged along a second direction intersecting the first direction and spaced apart from each other.

[0030] The width of each groove can be greater than the width of the processing area.

[0031] According to another aspect of the present invention, a method of manufacturing a display device includes the steps of: mounting a target substrate including a processing area on a first surface of a chuck, the first surface having a plurality of recesses, wherein at least a portion of the recesses overlaps with the processing area of ​​the target substrate in the thickness direction of the chuck; and etching the target substrate by irradiating the processing area of ​​the target substrate with a laser beam emitted from a laser module spaced apart from the chuck.

[0032] The step of etching the target substrate may include forming a hole through a portion of the target substrate.

[0033] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory, and are intended to provide further explanation of the claimed invention. Attached Figure Description

[0034] The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the inventive concept.

[0035] Figure 1 This is a partially cutaway side view of an embodiment of an etching apparatus constructed according to the principles of the present invention.

[0036] Figure 2 yes Figure 1 A schematic perspective view of an embodiment of the electrostatic chuck unit shown in the figure.

[0037] Figure 3 yes Figure 2 Bottom view of the electrostatic chuck unit.

[0038] Figure 4 It is along Figure 3 A cross-sectional view of the electrostatic chuck unit taken by line I-I'.

[0039] Figure 5 It shows the use of Figure 1 An enlarged view of the etching process of the etching equipment for etching the target substrate.

[0040] Figure 6 yes Figure 5 A magnified view of region A.

[0041] Figure 7 yes Figure 6 A magnified view of region B.

[0042] Figure 8 yes Figure 6 A magnified view of region C.

[0043] Figure 9 It shows Figure 1 Bottom view of an embodiment of the relative arrangement of the grooves, electrode layers and connecting electrode layers of an electrostatic chuck unit.

[0044] Figure 10 It is along Figure 9 A cross-sectional view of the first embodiment taken from line II-II'.

[0045] Figure 11 It is along Figure 9 A cross-sectional view of the embodiment taken from line III-III'.

[0046] Figure 12 It is along Figure 9 The cross-sectional view of the second embodiment is taken from line II-II'.

[0047] Figure 13 It is along Figure 9The cross-sectional view of the third embodiment is taken from line II-II'.

[0048] Figure 14 It is along Figure 9 The cross-sectional view of the fourth embodiment is taken from line II-II'.

[0049] Figure 15 It is along Figure 9 The cross-sectional view of the fifth embodiment is taken from line II-II'.

[0050] Figure 16 This is a bottom view layout diagram showing an embodiment of the relative arrangement of the electrostatic chuck unit and the first target substrate.

[0051] Figure 17 This is a bottom view layout diagram showing an embodiment of the relative arrangement of the electrostatic chuck unit and the second target substrate.

[0052] Figure 18 yes Figure 1 The bottom view of another embodiment of the electrostatic chuck unit is shown in the figure.

[0053] Figure 19 This is a perspective view of an embodiment of a display device constructed according to the principles of the present invention.

[0054] Figure 20 It is along Figure 19 A cross-sectional view taken from line V-V'. Detailed Implementation

[0055] In the following description, numerous specific details are set forth for illustrative purposes to provide a thorough understanding of various embodiments or implementations of the invention. As used herein, “embodiment” and “implementation” are interchangeable terms and are non-limiting examples of apparatus or methods employing one or more inventive concepts disclosed herein. However, it will be apparent that various embodiments may be practiced without these specific details or using one or more equivalent arrangements. In other instances, well-known structures and apparatuses are shown in block diagram form to avoid unnecessarily obscuring the various embodiments. Furthermore, the various embodiments may be different, but are not necessarily exclusive. For example, the specific shape, construction, and characteristics of an embodiment may be used or implemented in another embodiment without departing from the inventive concept.

[0056] Unless otherwise stated, the embodiments shown should be understood as exemplary features providing different details of some ways in which the inventive concept can be implemented in practice. Therefore, unless otherwise stated, features, components, modules, layers, films, panels, regions and / or aspects (hereinafter individually or collectively referred to as “elements”) of various embodiments may be additionally combined, separated, interchanged and / or rearranged without departing from the inventive concept.

[0057] Crosshairs and / or shading are typically used in accompanying drawings to clarify the boundaries between adjacent elements. Therefore, unless otherwise stated, the presence or absence of crosshairs or shading does not convey or indicate any preference or requirement for the specific material, material properties, dimensions, scale, commonalities among the elements shown, and / or any other characteristics, properties, etc. Furthermore, in the accompanying drawings, the dimensions and relative dimensions of elements may be exaggerated for clarity and / or descriptive purposes. When embodiments can be implemented differently, a particular process sequence may be performed differently than the described sequence. For example, two consecutively described processes may be performed substantially simultaneously or in the reverse order of their description. Additionally, the same reference numerals denote the same elements.

[0058] When an element, such as a layer, is referred to as being "on," "connected to," or "bonded to" another element or layer, the element may be directly on, directly connected to, or directly bonded to the other element or layer, or there may be intermediate elements or intermediate layers present. However, when an element or layer is referred to as being "directly on," "directly connected to," or "directly bonded to" another element or layer, there are no intermediate elements or intermediate layers present. Therefore, the term "connection" can refer to a physical, electrical, and / or fluid connection, with or without intermediate elements. Furthermore, the D1, D2, and D3 axes are not limited to the three axes of a Cartesian coordinate system, such as the x, y, and z axes, and can be interpreted in a broader sense. For example, the D1, D2, and D3 axes can be perpendicular to each other, or they can represent different directions that are not perpendicular to each other. For the purposes of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" can be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as XYZ, XYY, YZ, and ZZ. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0059] Although the terms “first,” “second,” etc., may be used herein to describe different types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, without departing from the teachings of this disclosure, the first element discussed below may be referred to as the second element.

[0060] For descriptive purposes, spatial relative terms such as “below,” “under,” “below,” “down,” “above,” “above,” “higher,” “side” (e.g., in a “side wall”), etc., are used herein to describe the relationship of one element to other elements as shown in the figures. Spatial relative terms are intended to cover different orientations of the device in use, operation, and / or manufacture, in addition to those depicted in the figures. For example, if the device is flipped in the figures, an element described as “below” or “under” other elements or features would subsequently be positioned “above” other elements or features. Thus, the term “below” can encompass both “above” and “below” orientations. Furthermore, the device may be otherwise positioned (rotated 90 degrees or in other orientations), and the spatial relative terms used herein shall therefore be interpreted accordingly.

[0061] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well. Furthermore, when the terms “comprising,” “including,” “possessing,” and / or “having” are used in this specification, they indicate the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. It is also noted that, as used herein, the terms “substantially,” “approximately,” and other similar terms are used as terms of approximation rather than terms of degree, and thus to explain the inherent biases in measured, calculated, and / or set values ​​that will be recognized by those skilled in the art.

[0062] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art as is generally understood in this disclosure, to which this disclosure is a part. Unless expressly defined herein, terms (e.g., those defined in a commonly used dictionary) shall be interpreted as having a meaning consistent with their meaning in the context of the relevant field and shall not be interpreted as having an ideal or overly formal meaning.

[0063] Figure 1 This is a partially cutaway side view of an embodiment of an etching apparatus 1 constructed according to the principles of the present invention.

[0064] In the accompanying drawings describing the etching apparatus 1 in this specification, a first direction DR1, a second direction DR2, and a third direction DR3 are defined. The third direction DR3 indicates the thickness direction of the first vacuum chamber CH1. The first direction DR1 and the second direction DR2 intersect each other perpendicularly, and the third direction DR3 is the direction that intersects with the plane containing the first direction DR1 and the second direction DR2, that is, it intersects perpendicularly with both the first direction DR1 and the second direction DR2.

[0065] In the embodiments, unless otherwise specified, "above" indicates the side facing the third-party DR3, that is, the side of the target substrate SUB on which a chuck, which may be in the form of an electrostatic chuck unit 100, is provided, and "upper surface" indicates the surface facing the side facing the third-party DR3. Conversely, "below" indicates the other side opposite to the side facing the third-party DR3, that is, the side opposite to the side of the target substrate SUB on which the electrostatic chuck unit 100 is provided, and "lower surface" indicates the surface facing the other side facing the third-party DR3.

[0066] Reference Figure 1 The etching apparatus 1 may include a first vacuum chamber CH1, an electrostatic chuck unit 100, a laser module 200, and first chamber windows CW1 to third chamber windows CW3. The etching apparatus 1 may also include a second vacuum chamber CH2, a transfer unit 300, a first protective window PW1 and a second protective window PW2, and a cassette CS.

[0067] The target substrate SUB described herein is the object to be processed by etching equipment 1 and can be applied to any type of display device, such as an organic light-emitting display device using organic light-emitting diodes including organic light-emitting layers, a micro-display device using micro light-emitting diodes (LEDs), a quantum dot light-emitting display device using quantum dot LEDs including quantum dot light-emitting layers, or an inorganic light-emitting display device using inorganic light-emitting elements including inorganic semiconductors. In the following description, for ease of description, the target substrate SUB will be primarily described as the substrate (or display panel) of an organic light-emitting display device.

[0068] exist Figure 1 The image schematically shows a portion of the first vacuum chamber CH1. The etching apparatus 1 may include a vacuum pump and a vacuum valve, and the first vacuum chamber CH1 may be kept vacuumed by the vacuum pump and the vacuum valve.

[0069] The first vacuum chamber CH1 provides space for performing an etching process on the target substrate SUB. The target substrate SUB can be supplied from outside the first vacuum chamber CH1 to the inside of the first vacuum chamber CH1 and placed within the first vacuum chamber CH1.

[0070] The first gate valve G1 can be located on one side of the first vacuum chamber CH1. The target substrate SUB can be supplied into the first vacuum chamber CH1 through the first gate valve G1. That is, the first gate valve G1 can provide a passage for the target substrate SUB to enter or leave the first vacuum chamber CH1.

[0071] The second valve G2 can be located on the other side of the first vacuum chamber CH1. The first protective window PW1 and the second protective window PW2, which will be described later, can be transmitted through the second valve G2.

[0072] An electrostatic chuck unit 100 may be disposed in a first vacuum chamber CH1. The electrostatic chuck unit 100 can move or fix the target substrate SUB by supporting it. The electrostatic chuck unit 100 can use electrostatic force to fix the target substrate SUB supplied to the first vacuum chamber CH1 onto its surface. In an embodiment, the electrostatic chuck unit 100 may be configured as an electrostatic chuck for fixing the target substrate SUB using electrostatic force. The electrostatic chuck unit 100 may be disposed in the upper part of the first vacuum chamber CH1, and the lower surface of the electrostatic chuck unit 100 and the upper surface of the target substrate SUB may be in contact with each other.

[0073] The laser module 200 may be disposed outside the first vacuum chamber CH1. The laser module 200 may overlap with the processing area in the first vacuum chamber CH1 where the etching process of the target substrate SUB is performed. However, the embodiments are not limited thereto, and the laser module 200 may also not overlap with the processing area where the etching process is performed.

[0074] Laser module 200 irradiates the target substrate SUB with a laser beam L to process the target substrate SUB. The laser beam L emitted from laser module 200 can pass through a first chamber window CW1 disposed in a first vacuum chamber CH1 and reach the target substrate SUB, thereby etching the target substrate SUB. Laser module 200 may include a laser unit, lens, mirror, beam expander, filter, or scanner.

[0075] The first chamber window CW1 can be disposed on the bottom surface of the first vacuum chamber CH1. The first chamber window CW1 can overlap with the processing area of ​​the first vacuum chamber CH1.

[0076] The first chamber window CW1 can be made of a transparent material capable of transmitting the laser beam L emitted from the laser module 200. The laser beam L emitted from the laser module 200, which is located outside the first vacuum chamber CH1, can enter the first vacuum chamber CH1 through the first chamber window CW1.

[0077] The first chamber window CW1 can be disposed between the laser module 200 and the electrostatic chuck unit 100 (or the target substrate SUB). That is, the first chamber window CW1 can overlap with the laser module 200 and the electrostatic chuck unit 100 (or the target substrate SUB) in the thickness direction (e.g., the third direction DR3).

[0078] The first chamber window CW1 can be made of quartz. Although in Figure 1 The first chamber window CW1 is shown as a single window, but the embodiment is not limited to this. That is, the first chamber window CW1 may also be composed of multiple windows depending on the number of laser units included in the laser module 200.

[0079] The first chamber window CW1 may have a generally quadrilateral planar shape. Alternatively, the first chamber window CW1 may have a generally circular planar shape, but the embodiments are not limited thereto.

[0080] A first protective window PW1 can be disposed in the first vacuum chamber CH1 between the first chamber window CW1 and the electrostatic chuck unit 100. In an embodiment, the first protective window PW1 can be disposed above the first chamber window CW1. The first protective window PW1 can overlap with the processing area where the etching process of the target substrate SUB is performed in the first vacuum chamber CH1.

[0081] The first protective window PW1 can be made of a transparent material capable of transmitting the laser beam L that enters the first vacuum chamber CH1 through the first chamber window CW1. The first protective window PW1 can be made of quartz material, and can be made of the same material as the first chamber window CW1.

[0082] The first protective window PW1 can transmit the laser beam L, while preventing the first chamber window CW1 from being peeled off and falling from the target substrate SUB during the etching process by particles P(…). Figure 5 (As shown in the diagram) contamination. Therefore, the reduction in refraction or transmission caused by particles P on the first chamber window CW1 can be prevented, thereby improving the treatment quality.

[0083] Despite Figure 1 The first protective window PW1 is shown as a single window, but the embodiment is not limited to this. That is, the first protective window PW1 can also be composed of multiple windows depending on the number of laser modules 200. The first protective window PW1 can have a generally quadrilateral or generally circular planar shape. Furthermore, the planar shape of the first protective window PW1 can follow the planar shape of the first chamber window CW1, but the embodiment is not limited to this.

[0084] A laser power measurement unit 400 may be disposed on the first vacuum chamber CH1. The laser power measurement unit 400 can measure the power of the laser beam L emitted from the laser module 200. For example, the laser power measurement unit 400 may include a laser power meter that receives the laser beam L emitted from the laser module 200 and transmitted through the first chamber window CW1 and the third chamber window CW3, converts the laser beam L into an electrical signal, and displays the electrical signal.

[0085] The laser power measurement unit 400 can overlap with the processing area where the etching process of the target substrate SUB is performed in the first vacuum chamber CH1. Additionally, the laser power measurement unit 400 can overlap with the first protective window PW1. Although in Figure 1 The laser power measurement unit 400 is located outside the first vacuum chamber CH1, but it can be located anywhere as long as it can detect the power of the laser beam L emitted from the laser module 200.

[0086] The alignment inspection unit 500 may be disposed outside the first vacuum chamber CH1. The alignment inspection unit 500 may be disposed below the first vacuum chamber CH1. The alignment inspection unit 500 may inspect the alignment of the electrostatic chuck unit 100 and the target substrate SUB by photographing the electrostatic chuck unit 100 and the target substrate SUB via the second chamber window CW2. In an embodiment, the alignment inspection unit 500 may include a camera. The alignment inspection unit 500 may inspect the alignment of the electrostatic chuck unit 100 by photographing the groove HM (which will be described later) of the electrostatic chuck unit 100. Figure 2 (as shown in the diagram) Whether the machining area EA of the target substrate SUB is in the thickness direction (e.g., the third direction DR3) (see...) Figure 5 The electrostatic chuck unit 100 and the target substrate SUB are overlapped to detect whether they are misaligned.

[0087] The transfer unit 300 can be disposed in the first vacuum chamber CH1. The transfer unit 300 can reciprocate within the first vacuum chamber CH1, thereby partially overlapping with the processing area where the etching process of the target substrate SUB is performed. The transfer unit 300 can be connected to an external drive source, thereby reciprocating left and right within the first vacuum chamber CH1.

[0088] The transmission unit 300 can transmit the first protective window PW1 described above and the second protective window PW2, which will be described later. Through the transmission unit 300, the first protective window PW1 and the second protective window PW2 can be transmitted from the first vacuum chamber CH1 to the second vacuum chamber CH2 or from the second vacuum chamber CH2 to the first vacuum chamber CH1.

[0089] The second vacuum chamber CH2 can be the space in which the second protective window PW2 is stored. Figure 1The diagram schematically shows a portion of the second vacuum chamber CH2. The second vacuum chamber CH2 can be maintained under vacuum using a vacuum pump and vacuum valves. The second vacuum chamber CH2 can be of any shape, as long as it can store the second protective window PW2.

[0090] The door CHD can be located on one side of the second vacuum chamber CH2. For example, the contaminated first protective window PW1 and second protective window PW2 can be cleaned or replaced with new protective windows through the door CHD. That is, the storage of the first protective window PW1 and second protective window PW2 can be managed separately from the first vacuum chamber CH1.

[0091] The cassette CS can be disposed within the second vacuum chamber CH2. The cassette CS can be fixed within the second vacuum chamber CH2. Furthermore, the cassette CS can be raised or lowered via a separate lifting unit and can be transported into or out of the second vacuum chamber CH2. The cassette CS may include multiple supports and multiple slots SL protruding from the supports.

[0092] The slots SL can be positioned facing each other. The slots SL can support the second protective window PW2 and provide space within which the second protective window PW2 can be loaded. Although in Figure 1 The middle box CS includes a total of five pairs of slots SL, but the number of slots SL in the box CS is not limited to this.

[0093] The second protective window PW2 can be located in the second vacuum chamber CH2. Specifically, the second protective window PW2 can be loaded onto the slot SL of the cartridge CS.

[0094] Each second protective window PW2 is a replacement protective window, and the first protective window PW1 can be replaced when it becomes contaminated. Therefore, it is possible to prevent contamination from particles P (see [link to product]) on the first protective window PW1. Figure 5 This reduces refraction or transmission, thereby improving processing quality. Furthermore, since it eliminates the need to replace or clean the first protective window PW1 by opening the first vacuum chamber CH1, the process efficiency of the etching equipment 1 can be improved.

[0095] Even when the first protective window PW1 and the second protective window PW2 are replaced, the second vacuum chamber CH2 can maintain a vacuum through the vacuum pump and vacuum valve. Therefore, even if the second gate valve G2 is opened to transfer the second protective window PW2, the vacuum level of the first vacuum chamber CH1 will not be affected. That is, when the first protective window PW1 is contaminated, it can be replaced with the second protective window PW2 while maintaining the high vacuum environment of the first vacuum chamber CH1. Therefore, the etching process can be performed continuously in a high vacuum environment without opening the chamber.

[0096] Furthermore, because the etching process can be performed in a high vacuum environment, moisture or oxygen can be introduced into the light-emitting element layer (EML) included in the target substrate SUB (see [link to ELEA]). Figure 7 This minimizes penetration in the target substrate (SUB). Therefore, the component reliability of the target substrate (i.e., the display device described later) can be improved.

[0097] The second protective window PW2 can be made of the same material as the first protective window PW1. That is, the second protective window PW2 can be made of a transparent material that can transmit the laser beam L. The second protective window PW2 can be made of quartz material.

[0098] The second protective window PW2 can have a planar shape that is substantially the same as that of the first protective window PW1. That is, the second protective window PW2 can have a generally quadrilateral or generally circular shape.

[0099] Although Figure 1 Five second protective windows (PW2) are stored in the second vacuum chamber (CH2), but the number of second protective windows (PW2) is not limited to this. That is, the storage management of the second protective windows (PW2) can be changed according to the laser treatment time of the protective windows, the number of laser treatment processes, and the contamination cycle.

[0100] Figure 2 yes Figure 1 A schematic perspective view of an embodiment of the electrostatic chuck unit 100 shown in the figure. Figure 3 yes Figure 2 Bottom view of the electrostatic chuck unit 100. Figure 4 It is along Figure 3 The cross-sectional view of the electrostatic chuck unit 100 taken by line I-I' is shown. It should be noted that... Figure 2 and Figure 3 This is a bottom view of the electrostatic chuck unit 100 as seen from below.

[0101] Reference Figures 2 to 4 The electrostatic chuck unit 100 may have a generally rectangular shape including its long and short sides; that is, it may be longer in the first direction DR1 than in the second direction DR2 in a plan view. However, embodiments are not limited to this, and the planar shape of the electrostatic chuck unit 100 may be varied. The electrostatic chuck unit 100 can move the target substrate SUB supplied to the first vacuum chamber CH1 by supporting the target substrate SUB via electrostatic or other known forces.

[0102] The electrostatic chuck unit 100 may include a substrate having an upper surface 100US and a lower surface 100BS facing the upper surface 100US. The upper surface 100US of the electrostatic chuck unit 100 may be a surface disposed on one side of the third direction DR3, which is the thickness direction of the etching apparatus 1, and the lower surface 100BS of the electrostatic chuck unit 100 may be a surface disposed in the opposite direction, that is, on the side opposite to the upper side of the third direction DR3, which is the thickness direction of the etching apparatus 1. The target substrate SUB may be mounted on the lower surface 100BS of the electrostatic chuck unit 100. Specifically, the lower surface 100BS of the electrostatic chuck unit 100 and the upper surface of the target substrate SUB may be in contact with each other.

[0103] The upper surface 100US of the electrostatic chuck unit 100 can be formed to be substantially flat. That is, the upper surface 100US of the electrostatic chuck unit 100 can be substantially located on a plane.

[0104] The lower surface 100BS of the electrostatic chuck unit 100 may include a base region BA and a recess that may be in the form of a groove, slit, slot, opening or recess (collectively referred to here as a "groove" HM).

[0105] The groove HM can be recessed from the substrate region BA in the thickness direction (i.e., the third direction DR3). For example, refer to Figure 4 The cross-sectional shape of each groove HM can be a generally trapezoidal shape in which the width decreases in the thickness direction (or depth direction, i.e., the third direction DR3). However, the embodiments are not limited to this, and the cross-sectional shape of each groove HM can also be a generally hemispherical or other shape in which the width decreases in the thickness direction (or depth direction, i.e., the third direction DR3).

[0106] Reference Figure 2 and Figure 3 The groove HM may include a plurality of first grooves HM1 extending in a first direction DR1 and a plurality of second grooves HM2 extending in a second direction DR2 intersecting the first direction DR1 in the plan view. That is, the groove HM may be formed in a grid shape in the plan view. The first grooves HM1 and the second grooves HM2 may intersect each other, and the intersecting areas of the first grooves HM1 and the second grooves HM2 may be integrated to form a groove HM.

[0107] The first grooves HM1 may extend in a first direction DR1 in the plan view and may be spaced apart from each other in a second direction DR2. For example, the direction in which the first grooves HM1 extend may be substantially parallel to the direction in which the long side of the electrostatic chuck unit 100 extends. However, the embodiment is not limited to this, and the direction in which the first grooves HM1 extend may also be inclined at a predetermined angle relative to the direction in which the long side of the electrostatic chuck unit 100 extends.

[0108] Reference Figure 3 The width WH1 of the first groove HM1 in the second direction DR2 can be substantially equal. In an embodiment, the maximum width WH1 of each first groove HM1 in the second direction DR2 can be in the range of approximately 20 mm to 30 mm. However, the embodiment is not limited to this, and the width WH1 of the first groove HM1 in the second direction DR2 can also be different from each other.

[0109] The distance between adjacent first grooves HM1 can be substantially equal. Specifically, the distance d1 between the first grooves HM1 in the second direction DR2 can be substantially equal. Each distance d1 between the first grooves HM1 can be the distance between adjacent first grooves HM1 in the second direction DR2. Although the distance d1 between the first grooves HM1 is... Figure 3 The distances d1 between the first grooves HM1 that are adjacent to each other in the second direction DR2 are substantially equal, but the embodiments are not limited thereto. The distance d1 between the first grooves HM1 can also be different from each other. The distance d1 between the first grooves HM1 can be determined based on at least one processing area EA included in the target substrate SUB, which will be described later (see Figure 5 The design was changed.

[0110] The distance d1 between the first grooves HM1 in the second direction DR2 can be greater than the width WH1 of the first grooves HM1 in the second direction DR2. Because the width WH1 of the first grooves HM1 in the second direction DR2 is less than the distance d1 between the first grooves HM1 in the second direction DR2, the contact area between the electrostatic chuck unit 100 and the target substrate SUB is increased, thereby preventing the function of the electrostatic chuck unit 100 in supporting the target substrate SUB from being weakened due to the formation of the first grooves HM1.

[0111] The second grooves HM2 may extend in the second direction DR2 in the plan view and may be spaced apart from each other in the first direction DR1. For example, the direction in which the second grooves HM2 extend may be substantially parallel to the direction in which the short side of the electrostatic chuck unit 100 extends. However, the embodiment is not limited to this, and the direction in which the second grooves HM2 extend may also be inclined at a predetermined angle relative to the direction in which the short side of the electrostatic chuck unit 100 extends.

[0112] The widths WH2 of the second grooves HM2 in the first direction DR1 can be substantially equal. In an embodiment, the maximum width WH2 of the second grooves HM2 in the first direction DR1 can be in the range of approximately 20 mm to 30 mm. However, the embodiment is not limited to this, and the widths WH2 of the second grooves HM2 in the first direction DR1 can also be different from each other.

[0113] The width WH2 of the second groove HM2 in the first direction DR1 can be substantially equal to the width WH1 of the first groove HM1 in the second direction DR2. That is, the width WH of the groove HM can include the width WH1 of the first groove HM1 in the second direction DR2 and the width WH2 of the second groove HM2 in the first direction DR1, and the widths WH of the grooves HM can be substantially equal. In an embodiment, the maximum width WH of the groove HM can be in the range of approximately 20 mm to 30 mm. However, the embodiment is not limited to this, and the width WH2 of the second groove HM2 in the first direction DR1 can also be different from the width WH1 of the first groove HM1 in the second direction DR2.

[0114] The distance between adjacent second grooves HM2 can be substantially equal. Specifically, the distance d2 between adjacent second grooves HM2 in the first direction DR1 can be substantially equal. Each distance d2 between second grooves HM2 can be the distance between adjacent second grooves HM2 in the first direction DR1. Although in Figure 3 The distance d2 between the second grooves HM2 is substantially the same, but the embodiment is not limited to this. The distance d2 between two second grooves HM2 that are adjacent to each other in the first direction DR1 can also be different. The distance d2 between the second grooves HM2 can be determined based on multiple processing areas EA included in the target substrate SUB, which will be described later (see...). Figure 5 The design was changed.

[0115] The distance d2 between the second grooves HM2 in the first direction DR1 can be greater than the width WH2 of the second grooves HM2 in the first direction DR1. Because the distance d2 between the second grooves HM2 in the first direction DR1 is greater than the width WH2 of the second grooves HM2 in the first direction DR1, the contact area between the electrostatic chuck unit 100 and the target substrate SUB is increased, thereby preventing the function of the electrostatic chuck unit 100 in supporting the target substrate SUB from being weakened due to the formation of the second grooves HM2.

[0116] In embodiments where the planar shape of the electrostatic chuck unit 100 is generally rectangular, including a long side in the first direction DR1 and a short side in the second direction DR2, the distance d2 between the second grooves HM2 in the first direction DR1 can be greater than the distance d1 between the first grooves HM1 in the second direction DR2. However, the embodiments are not limited to this, and the distance d1 between the first grooves HM1 and the distance d2 between the second grooves HM2 can also be substantially equal.

[0117] Despite Figure 2 and Figure 3The diagram shows three first grooves HM1 extending in the first direction DR1 and four second grooves HM2 extending in the second direction DR2, but the number of first grooves HM1 and the number of second grooves HM2 are not limited thereto.

[0118] The substrate region BA may be the region excluding the groove HM from the lower surface 100BS of the electrostatic chuck unit 100. The substrate region BA may be the region between the first groove HM1 and the second groove HM2. Some portions of the substrate region BA may include island shapes separated by the groove HM.

[0119] The substrate region BA faces the upper surface 100US of the electrostatic chuck unit 100. The substrate region BA may be substantially located on a plane. The substrate region BA may contact the upper surface of the target substrate SUB and fix the target substrate SUB by supporting the target substrate SUB as described above.

[0120] The planar area of ​​the substrate region BA can be larger than the overall planar area of ​​the groove HM. The planar area of ​​the groove HM can be approximately 30% or less of the area of ​​the lower surface 100BS of the electrostatic chuck unit 100. The planar area of ​​the substrate region BA can be approximately 70% or more of the area of ​​the lower surface 100BS of the electrostatic chuck unit 100. Because the planar area of ​​the substrate region BA, which is the part of the lower surface 100BS of the electrostatic chuck unit 100 that contacts the target substrate SUB, is larger than the planar area of ​​the groove HM, the support function of the electrostatic chuck unit 100 can be prevented from being weakened due to the reduction in the contact area between the electrostatic chuck unit 100 and the target substrate SUB caused by the groove HM.

[0121] Reference Figure 4 Each groove HM may include a first surface HMa and a second surface HMb. The first surface HMa of the groove HM may include two facing surfaces, and the second surface HMb of the groove HM may be disposed between the facing first surfaces HMa. That is, the groove HM may be a space defined by the first surface HMa and the second surface HMb.

[0122] The first surface HMa of the groove HM can be a surface extending from the substrate region BA. The first surface HMa of the groove HM can form the sidewall of the groove HM, and the second surface HMb of the groove HM can form the upper surface of the groove HM.

[0123] The first surface HMa of the groove HM can be tilted at a predetermined angle relative to the substrate region BA. The second surface HMb of the groove HM can be substantially parallel to the substrate region BA or the upper surface 100US of the electrostatic chuck unit 100. Therefore, the second surface HMb of the groove HM can be tilted at a predetermined angle to the first surface HMa of the groove HM. That is, the first surface HMa of the groove HM can have a predetermined tilt angle with the second surface HMb of the groove HM and the substrate region BA. When the cross-sectional shape of each groove HM is a substantially trapezoidal shape with the width decreasing in the thickness direction (or depth direction, i.e., the third direction DR3) as described above, the angle formed by each first surface HMa of the groove HM and the second surface HMb of the groove HM can be an obtuse angle. In the embodiment, the acute angle θ between the plane containing the first surface HMa of the groove HM and the plane containing the second surface HMb of the groove HM can be 60 degrees or less. Because the acute angle θ between the planes containing the first surface HMa and the second surface HMb of the groove HM is 60 degrees or less, it is possible to prevent the connection electrode layer 140 (see below) from being described later. Figure 11 It is destroyed during the process of forming the connecting electrode layer 140.

[0124] The gap W between parts of the matrix region BA H It can be approximately equal to the maximum width WH of the groove HM. The gap W between portions of the substrate region BA. H It can be greater than the width W2 of the second surface HMb of the groove HM. This is because the gap W between the portions of the substrate region BA... H The width W2 of the second surface HMb of the groove HM is greater than that of the groove HM, so the first surface HMa of the groove HM can be inclined at a predetermined angle to the base region BA and the second surface HMb.

[0125] The lower surface 100BS of the electrostatic chuck unit 100, on which the groove HM is formed, may include different surface steps of different thicknesses. Therefore, the thickness of the electrostatic chuck unit 100 may differ between the regions in which the groove HM is formed and the regions in which the groove HM is not formed. The thickness h1 of the region of the electrostatic chuck unit 100 in which the groove HM is not formed may be greater than the thickness h2 of the region of the electrostatic chuck unit 100 in which the groove HM is formed.

[0126] like Figure 4 As shown, the height h3 of each groove HM on the third direction DR3 can be less than the thickness h1 of the region in the electrostatic chuck unit 100 where no groove HM is formed. The height h3 of each groove HM on the third direction DR3 can be less than the thickness h2 of the region in the electrostatic chuck unit 100 where a groove HM is formed.

[0127] The thickness h1 of the region in the electrostatic chuck unit 100 where no groove HM is formed can be substantially equal to the sum of the thickness h2 of the region in the electrostatic chuck unit 100 where groove HM is formed and the height h3 of each groove HM in the third direction DR3. In an embodiment, the thickness h1 of the region in the electrostatic chuck unit 100 where no groove HM is formed can be approximately 14 mm to 20 mm, and the height h3 of each groove HM in the third direction DR3 can be approximately 5 mm to 7 mm. Because groove HMs with a height h3 of approximately 5 mm to 7 mm are formed on the lower surface 100BS of the electrostatic chuck unit 100, a laser beam L passing through the target substrate SUB, which will be described later, can travel to the groove HMs. The laser beam L is reduced in energy as it travels through the groove HMs, which serve as the space between the lower surface 100BS of the electrostatic chuck unit 100 and the target substrate SUB. Therefore, because the laser beam L passing through the target substrate SUB decreases in energy as it travels through the groove HM, it may not reach the lower surface 100BS of the electrostatic chuck unit 100, or it may reach the lower surface 100BS of the electrostatic chuck unit 100 with low energy. Thus, because the energy of the laser beam L decreases as it travels through the groove HM formed on the lower surface 100BS of the electrostatic chuck unit 100, damage to the lower surface 100BS of the electrostatic chuck unit 100 caused by the energy contained in the laser beam L can be prevented.

[0128] Figure 5 It shows the use of Figure 1 An enlarged view of the etching equipment 1 used to etch the target substrate SUB. Figure 6 yes Figure 5 A magnified view of region A.

[0129] Reference Figure 5 and combined Figure 1 The target substrate SUB may include a processing area EA. The processing area EA may be the area on the target substrate SUB where an etching process is performed using etching equipment 1. The processing area EA may correspond to the processing area where the etching process of the target substrate SUB is performed, such as... Figure 1 As shown in the image.

[0130] First, the target substrate SUB can be supplied to the first vacuum chamber CH1 via the first gate valve G1. The electrostatic chuck unit 100 can be positioned on the target substrate SUB supplied to the first vacuum chamber CH1 using a separate transfer unit (not shown), and the target substrate SUB can be fixed to the lower surface 100BS of the electrostatic chuck unit 100. In this case, the machining area EA of the target substrate SUB can be aligned to overlap with at least a portion of the groove HM formed on the lower surface 100BS of the electrostatic chuck unit 100 by using the alignment inspection unit 500 described above.

[0131] After aligning the processing area EA of the target substrate SUB with at least a portion of the groove HM formed on the lower surface 100BS of the electrostatic chuck unit 100, the electrostatic chuck unit 100, which has the target substrate SUB supported on the lower surface 100BS, can be moved together with the target substrate SUB to the processing area where the etching process is performed by a transfer unit (not shown).

[0132] For ease of description, Figure 5 and Figure 6 The main components shown are the electrostatic chuck unit 100, the target substrate SUB, the first protective window PW1, and the laser module 200 disposed in the processing area where the etching process is performed.

[0133] The target substrate SUB can be located on the lower surface 100BS of the electrostatic chuck unit 100, where a groove HM is formed. The target substrate SUB can contact the substrate region BA and can be fixed to the electrostatic chuck unit 100. The target substrate SUB can be supported and fixed to the substrate region BA by the electrostatic force of the electrostatic chuck unit 100. The target substrate SUB can be spaced apart from the electrostatic chuck unit 100 in some regions where the groove HM is formed.

[0134] The laser module 200 can be spaced apart from the electrostatic chuck unit 100 and can irradiate the lower surface of the target substrate SUB with a laser beam L. The laser beam L irradiated from the laser module 200 can pass through the first chamber window CW1 and enter the first vacuum chamber CH1. The laser beam L passing through the first chamber window CW1 can pass through the first protective window PW1 and reach the lower surface of the target substrate SUB corresponding to the processing area EA of the target substrate SUB.

[0135] Because an etching process is performed on the target substrate SUB, such as Figure 5 As shown, particles P peeled off from the target substrate SUB can descend toward the first protective window PW1 and land on its surface. In this case, particles P may reduce the refraction or transmission of the laser beam L, thereby degrading the quality of the etching process. Figure 1 As shown, the contaminated first protective window PW1 can be transferred from the first vacuum chamber CH1 to the second vacuum chamber CH2 via the second gate valve G2 through the transfer unit 300, and the second protective window PW2 can be transferred from the second vacuum chamber CH2 to the first vacuum chamber CH1.

[0136] Reference Figure 6 and combined Figure 5 The laser beam L irradiated from the laser module 200 onto the lower surface of the target substrate SUB corresponding to the processing area EA may include a first laser beam L1 and a second laser beam L2.

[0137] The first laser beam L1 may be a laser beam from the laser beam L that irradiates the target substrate SUB but fails to penetrate the target substrate SUB. The first laser beam L1 may not penetrate the target substrate SUB because its energy is depleted during the etching of a portion of the target substrate SUB. The first laser beam L1 irradiates the lower surface of the target substrate SUB corresponding to the processing area EA, and its energy is depleted during the etching of multiple organic and / or inorganic layers in the target substrate SUB, which will be described later. Therefore, the first laser beam L1 may not be able to penetrate the target substrate SUB.

[0138] The second laser beam L2 can be a laser beam that passes through the target substrate SUB within the laser beam L that irradiates the target substrate SUB. The second laser beam L2 can be a laser beam that passes through the target substrate SUB with the energy remaining after etching a portion of the target substrate SUB and proceeds in parallel to the lower surface 100BS of the electrostatic chuck unit 100. Because the processing area EA of the target substrate SUB is positioned to overlap with the groove HM of the electrostatic chuck unit 100 in the third direction DR3, the second laser beam L2, after passing through the target substrate SUB and traveling towards the lower surface 100BS of the electrostatic chuck unit 100, can travel to the groove HM. As the energetic second laser beam L2 travels through the groove HM, which serves as the space between the target substrate SUB and the electrostatic chuck unit 100, the predetermined energy of the second laser beam L2 can be depleted. Therefore, because the predetermined energy is depleted as the energetic second laser beam L2 travels through the groove HM, the second laser beam L2 with reduced energy can reach the lower surface 100BS of the electrostatic chuck unit 100. Therefore, the lower surface 100BS of the electrostatic chuck unit 100 can be prevented from being damaged by the laser beam L.

[0139] Figure 7 yes Figure 6 A magnified view of region B. Figure 8 yes Figure 6 A magnified view of region C.

[0140] The multiple layers of the target substrate SUB, which are sequentially stacked from the lower surface 100BS of the electrostatic chuck unit 100 in a direction opposite to the third direction DR3, will now be described.

[0141] Reference Figure 7 The target substrate SUB may include a substrate 21, a circuit element layer (TFTL) disposed on the substrate 21, a light-emitting element layer (EML) disposed on the TFTL, and a thin-film encapsulation layer (CPL) disposed on the EML. However, the embodiments are not limited thereto, and another layer may be further disposed between these layers, and some of the stacked components may be omitted.

[0142] As described above, the target substrate SUB may include the substrate of an organic light-emitting display device. In an embodiment, the target substrate SUB may be the display panel of an organic light-emitting display device.

[0143] The substrate 21 can support each layer disposed on the substrate 21. The substrate 21 can be made of an insulating material such as a polymer resin or an inorganic material such as glass or quartz.

[0144] The circuit element layer (TFTL) can be disposed on the substrate 21. The TFTL can include not only the thin-film transistor for each pixel, but also scan lines, data lines, power lines, scan control lines, fan-out lines, and routing lines connecting the pads to the data lines. Each thin-film transistor can include a gate electrode, a semiconductor layer, a source electrode, and a drain electrode.

[0145] The light-emitting element layer (EML) can be disposed on the circuit element layer (TFTL). The light-emitting element layer (EML) may include the pixel electrode (PXE), the pixel limiting layer (PDL), the light-emitting layer (EL), and the common electrode (CME).

[0146] The pixel electrode (PXE) can be disposed on the circuit element layer (TFTL). The pixel electrode (PXE) can be the first electrode of the LED, for example, the anode. The pixel electrode (PXE) can have a stacked structure, wherein a material layer with a high work function, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In2O3), and a reflective material layer, such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or mixtures thereof, are stacked. The material layer with the high work function can be disposed on the reflective material layer, close to the light-emitting layer (EL). The pixel electrode (PXE) can have, but is not limited to, a multilayer structure of ITO / Mg, ITO / MgF2, ITO / Ag, or ITO / Ag / ITO.

[0147] A pixel defining layer (PDL) can be disposed on a circuit element layer (TFTL) along the boundary of each pixel. The pixel defining layer (PDL) can be disposed on a pixel electrode (PXE) and can include an opening that exposes the pixel electrode (PXE).

[0148] The light-emitting layer (EL) is disposed on the pixel electrode (PXE) exposed by the pixel defining layer (PDL). The EL can be an organic light-emitting layer comprising organic materials. In this case, the EL may include a hole transport layer, an organic light-emitting layer, and an electron transport layer.

[0149] The common electrode (CME) can be disposed on the light-emitting layer (EL). The common electrode (CME) can contact not only the light-emitting layer (EL) but also the upper surface of the pixel defining layer (PDL). The common electrode (CME) can be integrally connected without distinction between pixels. The common electrode (CME) can be a whole-surface electrode disposed across the entire surface without distinction between pixels. The common electrode (CME) can be the second electrode of the LED, for example, the cathode.

[0150] A thin-film encapsulation layer (CPL) can be disposed on the light-emitting element layer (EML). The CPL may include a first inorganic layer 23, an organic layer 25, and a second inorganic layer 27. Each of the first inorganic layer 23 and the second inorganic layer 27 may include silicon nitride, silicon oxide, or silicon oxynitride. The organic layer 25 may include an organic insulating material, such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0151] Reference Figure 8 and combined Figure 7 The inorganic or organic layers included in the target substrate SUB can be etched using etching equipment 1. In an embodiment, the target substrate SUB may include a substrate 21, a circuit element layer (TFTL), a light-emitting element layer (EML), and a thin-film encapsulation layer (CPL) disposed on the substrate 21, and the organic and / or inorganic layers of the TFTL, EML, and CPL overlapping the processing area EA can be etched using etching equipment 1. Through the etching process, holes can be formed to pass through the TFTL, EML, and CPL overlapping the processing area EA of the target substrate SUB. In the etching process, the substrate 21 overlapping the processing area EA may not be etched.

[0152] Specifically, in the laser beam L irradiated from the laser module 200, the first laser beam L1 may exhaust its energy while etching multiple organic and / or inorganic layers disposed in the region overlapping with the processing region EA. Therefore, the first laser beam L1 may not be able to penetrate the substrate 21 of the target substrate SUB. In the laser beam L irradiated from the laser module 200, the second laser beam L2 may have energy remaining after etching the organic and / or inorganic layers disposed in the region overlapping with the processing region EA. Therefore, the second laser beam L2 can penetrate the substrate 21 of the target substrate SUB and travel to the groove HM, which serves as the space between the electrostatic chuck unit 100 and the target substrate SUB. The second laser beam L2 reaching the groove HM may exhaust its energy while traveling through the groove HM. Therefore, the second laser beam L2 will not reach the lower surface 100BS of the electrostatic chuck unit 100.

[0153] Figure 9 It shows Figure 1 Bottom view of an embodiment of the relative arrangement of the groove, electrode layer 130 and connecting electrode layer 140 of the electrostatic chuck unit 100. Figure 10 It is along Figure 9 A cross-sectional view of the first embodiment taken from line II-II'. Figure 11 It is along Figure 9 A cross-sectional view of the embodiment taken from line III-III'. It should be noted that, in Figure 10 and Figure 11 In the middle, the third party faces DR3 downwards.

[0154] Reference Figures 9 to 11 The electrostatic chuck unit 100 may include a substrate 110, a first dielectric layer 120 disposed on the substrate 110, an electrode layer 130, a connecting electrode layer 140, a second dielectric layer 150, and a power supply device 160. In the illustrated embodiment, the electrostatic chuck unit 100 can support the target substrate SUB by electrostatic force using a first electrode 131 and a second electrode 132 included in the electrode layer 130, which will be described later.

[0155] The planar shape of the substrate 110 can correspond to the planar shape of the electrostatic chuck unit 100. When the planar shape of the electrostatic chuck unit 100 is a generally rectangular shape having a long side in the first direction DR1 and a short side in the second direction DR2, the planar shape of the substrate 110 can also be a generally rectangular shape including the long side in the first direction DR1 and the short side in the second direction DR2.

[0156] The substrate 110 may include a recessed region GRA in which a plurality of recesses 110HM are formed and a flat region ATA in which no recesses 110HM are formed. The recessed region GRA may correspond to the planar shape of the recesses HM of the electrostatic chuck unit 100 described above. The recessed region GRA may have a shape substantially the same as the planar shape of the recesses HM of the electrostatic chuck unit 100. The flat region ATA may be a region excluding the recessed region GRA and may be a substantially flat region in the substrate 110 in which no recesses 110HM are formed.

[0157] The groove region GRA may include a first groove region GRA1 in which the connecting electrode layer 140, which will be described later, is not provided, and a second groove region GRA2 in which the connecting electrode layer 140 is provided. The second groove region GRA2 may not overlap with the processing region EA of the target substrate SUB described above on the third-party DR3.

[0158] The substrate 110 can support the first dielectric layer 120, the electrode layer 130, the connecting electrode layer 140, and the second dielectric layer 150, which will be described later. The substrate 110 can be made of a ceramic material.

[0159] Reference Figure 10 The substrate 110 may include an upper surface 110US and a lower surface 110BS facing the upper surface 110US.

[0160] The upper surface 110US of the substrate 110 can be the upper surface 100US of the electrostatic chuck unit 100. The groove 110HM formed in the region corresponding to the groove HM of the electrostatic chuck unit 100 can be formed on the lower surface 110BS of the substrate 110.

[0161] The lower surface 110BS of the substrate 110 may include a first surface 110BS1, a second surface 110BS2, and a third surface 110BS3.

[0162] The first surface 110BS1 may be the surface facing the upper surface 110US of the substrate 110. The first surface 110BS1 may be a substantially flat surface.

[0163] Each groove 110HM formed on the lower surface 110BS of the substrate 110 can be formed by a second surface 110BS2 and a third surface 110BS3 of the substrate 110. The third surface 110BS3 of the substrate 110 can be a surface extending from the first surface 110BS1 of the substrate 110. The third surface 110BS3 of the substrate 110 can include two surfaces facing each other. The second surface 110BS2 of the substrate 110 can be disposed between the facing third surfaces 110BS3 of the substrate 110.

[0164] The first dielectric layer 120 may be disposed on the lower surface 110BS of the substrate 110. The first dielectric layer 120 can prevent leakage current from occurring in the electrode layer 130 and / or the connection electrode layer 140, which will be described later.

[0165] The first dielectric layer 120 can be disposed in the flat region ATA. (Refer to...) Figure 10 The first dielectric layer 120 may not be disposed within a portion of the first recessed region GRA1. (Refer to...) Figure 11The first dielectric layer 120 can be disposed in the second recessed region GRA2. That is, the first dielectric layer 120 can expose at least a portion of the surface of the substrate 110 in the recessed region GRA. The first dielectric layer 120 can be disposed only in the flat region ATA and / or the second recessed region GRA2 that do not overlap with the processing region EA. Therefore, the first dielectric layer 120 can be prevented from being damaged by the laser beam L transmitted through the target substrate SUB.

[0166] The first dielectric layer 120 can be completely disposed on the first surface 110BS1 of the substrate 110. The first dielectric layer 120 may not be disposed on the lower surface 110BS, that is, not on the second surface 110BS2 and the third surface 110BS3 of the substrate 110 that overlap with the first groove region GRA1. The first dielectric layer 120 may not be disposed on the lower surface 110BS, that is, not on the second surface 110BS2 and the third surface 110BS3 of the substrate 110 that overlap with the second groove region GRA2. Because the first dielectric layer 120 is only disposed on the lower surface 110BS of the substrate 110 that does not overlap with the processing area EA of the target substrate SUB, it can be prevented from being damaged by the laser beam L.

[0167] Electrode layer 130 may be disposed on first dielectric layer 120. Electrode layer 130 may include first electrode 131 and second electrode 132. Electrode layer 130 may include conductive material.

[0168] The first electrode 131 and the second electrode 132 can be electrically insulated from each other. The first electrode 131 and the second electrode 132 can have different polarities. For example, the first electrode 131 can have a positive (+) polarity, and the second electrode 132 can have a negative (-) polarity. However, the embodiments are not limited to this, and the first electrode 131 can also have a negative (-) polarity, and the second electrode 132 can also have a positive (+) polarity. Because the first electrode 131 and the second electrode 132 have different polarities, they can generate electrostatic force.

[0169] The first electrode 131 and the second electrode 132 can be disposed in the flat region ATA. Due to the groove 110HM formed on the lower surface 110BS of the substrate 110, the flat region ATA can include an island (isolated) shape. The first electrode 131 and the second electrode 132 can be disposed in the region defined by the groove 110HM formed on the lower surface 110BS of the substrate 110.

[0170] The first electrode 131 may be disposed in the region defined by the groove 110HM formed on the lower surface 110BS of the substrate 110. Each first electrode 131 may include a first electrode trunk portion 131S and a plurality of first electrode branch portions 131B branching from the first electrode trunk portion 131S.

[0171] The first electrode backbone 131S can extend in the first direction DR1 in the plan view. The first electrode backbone 131S can extend in the first direction DR1, but both ends of the first electrode backbone 131S can terminate in the flat region ATA, thus separating them from adjacent grooves HM. The first electrode backbones 131S, disposed in the flat region ATA and spaced apart from each other along the same row (e.g., the first direction DR1), can be located substantially on the same straight line.

[0172] The first electrode branch portion 131B can branch from the first electrode trunk portion 131S. The first electrode branch portion 131B can branch from the first electrode trunk portion 131S and extend along the second direction DR2. The first electrode branch portions 131B can be spaced apart from each other in the first direction DR1 and can be arranged substantially parallel to each other.

[0173] Each second electrode 132 may include a second electrode trunk portion 132S and a plurality of second electrode branch portions 132B branching from the second electrode trunk portion 132S. The second electrode 132 may be spaced apart from the first electrode 131.

[0174] The second electrode backbone 132S can extend in the first direction DR1 in the plan view. The second electrode backbone 132S can extend in the first direction DR1, but its two ends can terminate in the flat region ATA, thus separating them from the adjacent groove HM. The second electrode backbone 132S can be spaced apart from the first electrode backbone 131S in the second direction DR2. The second electrode backbones 132S, disposed in the flat region ATA and spaced apart from each other along the same row (e.g., the first direction DR1), can be located substantially on the same straight line.

[0175] The second electrode branch portion 132B can branch from the second electrode trunk portion 132S. The second electrode branch portion 132B can branch from the second electrode trunk portion 132S and extend along the second direction DR2. The second electrode branch portions 132B can be spaced apart from each other in the first direction DR1 and can be arranged substantially parallel to each other.

[0176] The first electrode branch portion 131B and the second electrode branch portion 132B may extend in the second direction DR2 and be arranged alternately in the first direction DR1.

[0177] A connecting electrode layer 140 may be disposed on the electrode layer 130. The connecting electrode layer 140 may electrically connect a first electrode backbone portion 131S and a second electrode backbone portion 132S that are spaced apart from each other along the same row (e.g., a first direction DR1). The connecting electrode layer 140 may include a conductive material.

[0178] The connecting electrode layer 140 may include a first connecting electrode 141 and a second connecting electrode 142. The connecting electrode layer 140 may be disposed in the second recessed region GRA2. Specifically, the connecting electrode layer 140 may be disposed on the first dielectric layer 120 disposed in the second recessed region GRA2.

[0179] Each first connecting electrode 141 can contact corresponding ends of the first electrode trunk portion 131S that are spaced apart from each other along the same row (e.g., the first direction DR1) to electrically connect them. That is, the first electrodes 131 that are spaced apart from each other along the same row (e.g., the first direction DR1) can be electrically connected to each other.

[0180] Each second connecting electrode 142 can connect to corresponding ends of the second electrode trunk 132S that are spaced apart from each other along the same row (e.g., the first direction DR1) to electrically connect them. That is, the second electrodes 132 that are spaced apart from each other along the same row (e.g., the first direction DR1) can be electrically connected to each other.

[0181] Reference Figure 11 The connecting electrode layer 140 can be disposed across the groove 110HM of the substrate 110. The second surface 110BS2 and the third surface 110BS3 constituting each groove 110HM of the substrate 110 can be formed with obtuse angles, thereby minimizing layer formation defects in the process of forming the connecting electrode layer 140 formed across the groove 110HM of the substrate 110.

[0182] The second dielectric layer 150 may be disposed on the connecting electrode layer 140. The second dielectric layer 150 may be disposed in the flat region ATA. The second dielectric layer 150 may not be disposed in a portion of the first recessed region GRA1, but may be disposed in the second recessed region GRA2. That is, the second dielectric layer 150 may be disposed on the electrode layer 130 and / or the connecting electrode layer 140. The second dielectric layer 150 may completely cover the electrode layer 130 and / or the connecting electrode layer 140 disposed on the first dielectric layer 120.

[0183] Reference Figure 10In the first recessed region GRA1, the side surfaces 120HM of the first dielectric layer 120 and the side surfaces 150HM of the second dielectric layer 150 can be aligned substantially parallel to each other. The side surfaces 120HM of the first dielectric layer 120 and the side surfaces 150HM of the second dielectric layer 150 can be aligned substantially parallel to the third surface 110BS3 of each recess 110HM of the substrate 110. Each recess 110HM of the substrate 110 (the third surface 110BS3 of each recess 110HM), the side surfaces 120HM of the first dielectric layer 120 and the side surfaces 150HM of the second dielectric layer 150 can form the electrostatic chuck unit 100 as shown in the image. Figure 4 The first surface HMa of each groove HM is shown.

[0184] The power supply device 160 may include a first power supply device 161 and a second power supply device 162. The first power supply device 161 can transmit electrical signals to the first electrode 131. The second power supply device 162 can transmit electrical signals to the second electrode 132. Although in Figure 9 The illustration shows an electrostatic chuck unit 100 including a first power supply device 161 and a second power supply device 162, but the embodiment is not limited thereto. For example, the electrostatic chuck unit 100 may also include multiple first power supply devices 161 and second power supply devices 162.

[0185] The electrostatic chuck unit according to other embodiments will now be described. In the embodiments below, the same elements as those described above may be indicated by the same reference numerals, and therefore their redundant descriptions will be omitted or given only briefly.

[0186] Figure 12 It is along Figure 9 The cross-sectional view of the second embodiment is taken from line II-II'.

[0187] Reference Figure 12 The illustrated embodiments are similar to Figure 10 The difference in the embodiments is that the side surface 120HM_1 of the first dielectric layer 120_1 and the side surface 150HM_1 of the second dielectric layer 150_1 are not substantially parallel to the third surface 110BS3 of the substrate 110.

[0188] Specifically, a first dielectric layer 120_1 disposed on a first surface 110BS1 of the substrate 110 may be recessed from a third surface 110BS3 of the substrate 110. A side surface 120HM_1 of the first dielectric layer 120_1 may be disposed on the first surface 110BS1 of the substrate 110. The side surface 120HM_1 of the first dielectric layer 120_1 may be further aligned inwardly than the third surface 110BS3 of each recess 110HM constituting the substrate 110, thereby exposing a portion of the first surface 110BS1 of the substrate 110 in the thickness direction (e.g., third third direction DR3).

[0189] The second dielectric layer 150_1 disposed on the lower surface of the first dielectric layer 120_1 may be recessed from the side surface 120HM_1 of the first dielectric layer 120_1. The side surface 150HM_1 of the second dielectric layer 150_1 may be further aligned inward than the side surface 120HM_1 of the first dielectric layer 120_1, thereby exposing a portion of the lower surface of the first dielectric layer 120_1 in the thickness direction (e.g., the third direction DR3).

[0190] The corresponding side surfaces 120HM_1 and 150HM_1 of the first dielectric layer 120_1 and the second dielectric layer 150_1 can be substantially non-parallel to the third surface 110BS3 of the substrate 110. Therefore, each of the plurality of recesses HM_1 of the electrostatic chuck unit 100_1 can be formed by a recess 110HM of the substrate 110 that is substantially non-parallel to each other, and the side surfaces 120HM_1 of the first dielectric layer 120_1 and the second dielectric layer 150HM_1. The configuration of the illustrated embodiment can be formed by a process of patterning the first dielectric layer 120_1 and the second dielectric layer 150_1 on the substrate 110.

[0191] Figure 13 It is along Figure 9 The cross-sectional view of the third embodiment is taken from line II-II'. Figure 14 It is along Figure 9 The cross-sectional view of the fourth embodiment is taken from line II-II'. Figure 15 It is along Figure 9 The cross-sectional view of the fifth embodiment is taken from line II-II'.

[0192] Reference Figure 13According to the illustrated embodiment, the second dielectric layer 150_2 can extend outward to completely cover the lower and side surfaces of the first dielectric layer 120_2, and can be disposed on the first surface 110BS1 of the substrate 110 exposed by the first dielectric layer 120_2. The side surface 150HM_2 of the second dielectric layer 150_2 can be tilted at a different tilt angle than the tilt angle of the third surface 110BS3 of the substrate 110. In the illustrated embodiment, each groove HM_2 of the electrostatic chuck unit 100_2 can be formed by the groove 110HM of the substrate 110 and the side surface 150HM_2 of the second dielectric layer 150_2.

[0193] Reference Figure 14 The first dielectric layer 120_3 of the electrostatic chuck unit 100_3 can extend outward to completely cover the first surface 110BS1 of the substrate 110, and can also be disposed on the third surface 110BS3 of each groove 110HM formed on the lower surface of the substrate 110.

[0194] Reference Figure 15 The illustrated embodiments are similar to Figure 10 The difference in the embodiment is that the grooves are not formed in the substrate 110_4. Specifically, the grooves may not be formed in the substrate 110_4. Each groove HM_4 of the electrostatic chuck unit 100_4 may be formed by the side surface 120HM of the first dielectric layer 120 and the side surface 150HM of the second dielectric layer 150. Even in this case, the first dielectric layer 120 and the second dielectric layer 150 are not disposed in, for example, the area where the first groove region GRA1 overlaps with the processing area EA of the target substrate SUB. Therefore, even if the laser beam L reaches this area, the first dielectric layer 120 and / or the second dielectric layer 150 will not be damaged. Therefore, particles P (see Figure 5 It peeled off from the substrate 110_4.

[0195] Figure 16 This is a bottom view layout diagram showing an embodiment of the relative arrangement of the electrostatic chuck unit 100 and the first target substrate SUB1. Figure 17 This is a bottom view layout diagram showing an embodiment of the relative arrangement of the electrostatic chuck unit 100 and the second target substrate SUB2.

[0196] Reference Figure 16 and Figure 17 The etching apparatus 1, which includes an electrostatic chuck unit 100 according to the illustrated embodiment, is an example of performing an etching process on a target substrate SUB without replacing the electrostatic chuck unit 100, even when the target substrate SUB is changed.

[0197] Specifically, Figure 16 and Figure 17 Each of the first target substrate SUB1 and the second target substrate SUB2 can be a parent substrate comprising a plurality of unit units CE1 or CE2. Each of the unit units CE1 included in the first target substrate SUB1 and the unit units CE2 included in the second target substrate SUB2 can be a display device 2, which will be described later with reference to other figures (see Figure 2). Figure 19 The display panel 20 (see) Figure 20 ).

[0198] Reference Figure 16 ,exist Figure 16 The multiple unit elements CE1 shown can be arranged in a matrix shape on the first target substrate SUB1. The unit elements CE1 can be arranged along a first direction DR1 and a second direction DR2. Figure 16 In the embodiment shown, the first target substrate SUB1 includes four columns and three rows of unit cells CE1, that is, a total of 12 unit cells CE1. However, the number of unit cells CE1 included in the first target substrate SUB1 is not limited to this.

[0199] Each unit cell CE1 may include at least one processing area EA1. The processing area EA1 included in each unit cell CE1 may overlap with one of a plurality of grooves HM formed on the lower surface of the electrostatic chuck unit 100 in the third direction DR3. Specifically, the processing area EA1 included in each unit cell CE1 in the illustrated embodiment may overlap with a second groove HM2 extending along the second direction DR2 in the electrostatic chuck unit 100. Therefore, the laser beam L emitted from the laser module 200 and irradiating the plurality of processing areas EA1 of the first target substrate SUB1 may be reduced in energy even after passing through the first target substrate SUB1 and traveling through the grooves HM as described above. Therefore, even if the laser beam L reaches the lower surface of the electrostatic chuck unit 100, damage to the lower surface of the electrostatic chuck unit 100 can be prevented. Furthermore, since the groove HM of the electrostatic chuck unit 100 is not only formed in the region corresponding to the processing region EA1 of the first target substrate SUB1, but also extends along the first direction DR1 and / or the second direction DR2, even if the processing region EA1 of the first target substrate SUB1 changes, it is not necessary to design the planar shape of the groove HM of the electrostatic chuck unit 100 separately.

[0200] Reference Figure 17 , Figure 17 The multiple unit cells CE2 shown can be arranged in a rectangular shape on the second target substrate SUB2. The unit cells CE2 can be arranged along a first direction DR1 and a second direction DR2. Figure 17In the embodiment shown, the unit CE2 can be with Figure 16 The unit cells CE1 are arranged differently. For example, in Figure 17 In the embodiment shown, the second target substrate SUB2 includes eight columns and three rows of unit cells CE2, that is, a total of 24 unit cells CE2.

[0201] Each unit cell CE2 may include at least one processing area EA2. The processing area EA2 included in each unit cell CE2 may differ in location and arrangement. Figure 16 The processing area EA1 is shown in the diagram. Even in this case, the processing area EA2 included in each unit cell CE2 can still overlap with one of the plurality of grooves HM formed on the lower surface of the electrostatic chuck unit 100 in the third direction DR3. Specifically, the processing area EA2 included in each unit cell CE2 in the illustrated embodiment can overlap with the first groove HM1 extending in the electrostatic chuck unit 100 along the first direction DR1. Therefore, the laser beam L emitted from the laser module 200 and irradiating the plurality of processing areas EA2 of the second target substrate SUB2 can still be reduced in energy by the groove HM even after passing through the second target substrate SUB2.

[0202] like Figure 16 and Figure 17 As shown, although the unit cells CE1 and CE2 and / or the processing regions EA1 and EA2 included in the first target substrate SUB1 and the second target substrate SUB2 differ in position and size, because the grooves HM are continuously formed on the lower surface of the electrostatic chuck unit 100 extending along the first direction DR1 and the second direction DR2, the etching process can still be performed without replacing the electrostatic chuck unit 100 even when the target substrate changes. Therefore, the replacement time of the electrostatic chuck unit 100 is shortened, thereby improving the efficiency of the process for manufacturing display devices by etching.

[0203] Figure 18 yes Figure 1 The bottom view of another embodiment of the electrostatic chuck unit 100 shown in the figure.

[0204] Reference Figure 18 According to the illustrated embodiment, the electrostatic chuck unit 100_5 and Figure 3 The difference in the embodiment is that the groove HM_5 formed on the lower surface of the electrostatic chuck unit 100_5 is in the shape of a circle in the plan view, and the circles are spaced apart from each other.

[0205] Specifically, multiple grooves HM_5 can be formed on the lower surface 100BS_5 of the electrostatic chuck unit 100_5. The grooves HM_5 can have a generally circular planar shape. The grooves HM_5 can be positioned in conjunction with... Figure 3 In the embodiment, the grooves HM are arranged substantially parallel to each other along the first direction DR1 and the second direction DR2, and can be spaced apart from each other.

[0206] In the illustrated embodiment, because the grooves HM_5 are spaced apart from each other, the substrate regions BA can be integrally connected. Therefore, the planar shape of the substrate regions BA does not need to include island shapes. Furthermore, because the first electrode 131 and the second electrode 132 are disposed in the substrate regions BA of the electrostatic chuck unit 100_5, the connecting electrode layer 140 may be unnecessary.

[0207] Now refer to Figure 19 and Figure 20 An example is described using an etching apparatus 1 according to an embodiment to manufacture a display device 2.

[0208] Figure 19 This is a perspective view of an embodiment of a display device 2 constructed according to the principles of the present invention. Figure 20 It is along Figure 19 A cross-sectional view taken from line V-V'.

[0209] Figure 19 An example of a display device 2 manufactured using etching equipment 1 is shown. Figure 19 The display device 2 can correspond to a unit CE1 or a unit CE2, and its mother substrate is Figure 16 or Figure 17 The first target substrate SUB1 or the second target substrate SUB2.

[0210] Display device 2 can be applied to a variety of electronic devices, including small and medium-sized electronic devices such as tablet PCs, smartphones, car navigation units, cameras, in-vehicle central information displays (CIDs), watch-type electronic devices, personal digital assistants (PDAs), portable multimedia players (PMPs), and game consoles, as well as medium and large-sized electronic devices such as televisions, billboards, monitors, PCs, and laptops. However, these are merely examples, and it is evident that display device 2 can also be used in other electronic devices without departing from the concept of this disclosure.

[0211] The display device 2 can take various forms depending on the display method. For example, the display device 2 can be an organic light-emitting display device, an inorganic electroluminescent (EL) display device, a quantum dot light-emitting display device (QED), a micro LED display device, a nano LED display device, a plasma display panel (PDP), a field emission display device (FED), a cathode ray tube (CRT), a liquid crystal display device (LCD), or an electrophoretic display device (EPD), etc. In the embodiments, the target substrate SUB can be the substrate or display panel of the organic light-emitting display device described above, and the organic light-emitting display device will be described as an example of the display device 2. Unless otherwise specified, the organic light-emitting display device used in the embodiments will be simply referred to as display device 2.

[0212] Reference Figure 19 and Figure 20 The display device 2 may include a display panel 20 and a cover window 29 disposed on the display panel 20. The display panel 20 may include at least one hole HLE passing through the display panel 20 in the sixth direction DR6.

[0213] exist Figure 19 and Figure 20 The diagram defines a fourth direction DR4, a fifth direction DR5, and a sixth direction DR6. The fourth direction DR4 and the fifth direction DR5 can be directions perpendicular to each other on a plane. The sixth direction DR6 can be a direction perpendicular to the plane containing the fourth direction DR4 and the fifth direction DR5. The sixth direction DR6 is perpendicular to each of the fourth direction DR4 and the fifth direction DR5. In embodiments describing the display device 2, the sixth direction DR6 indicates the thickness direction of the display device 2.

[0214] Display device 2 can have a generally rectangular shape including its long and short sides; that is, it can be longer in the fifth direction DR5 than in the fourth direction DR4 in a plan view. In the plan view, the angle where the long and short sides of display device 2 meet can be a right angle. However, the embodiment is not limited to this, and the angle can also be rounded. The shape of display device 2 is not limited to the above examples and can be varied. For example, display device 2 can also have other planar shapes, such as a square, a quadrilateral with rounded corners (vertices), other polygons, and a circle.

[0215] The display surface of the display device 2 may be disposed on one side of the sixth direction DR6, which is the thickness direction. In the embodiment, unless otherwise mentioned, in the description of the display device 2, "above" or "upper side" refers to the upper side of the sixth direction DR6 and the display direction, and "upper surface" refers to the surface facing the upper side of the sixth direction DR6. In addition, "below" or "lower side" refers to the other side of the sixth direction DR6 and the direction opposite to the display direction, and "lower surface" refers to the surface facing the other side of the sixth direction DR6.

[0216] The display device 2 may include a display area DA and a non-display area NDA. The display area DA may be an area capable of displaying a screen, and the non-display area NDA may be an area where a screen is not displayed. The display area DA may also be referred to as an active area, and the non-display area NDA may also be referred to as a passive area.

[0217] The shape of the display area DA can follow the shape of the display device 2. For example, the display area DA can have a generally rectangular planar shape similar to the overall shape of the display device 2. The display area DA can generally occupy the center of the display device 2.

[0218] The non-display area NDA can be defined as an area where no image is displayed. The non-display area NDA may include a first non-display area NDA1 that surrounds the display area DA and a second non-display area NDA2 that is located inside the display area DA.

[0219] The first non-display area NDA1 may surround the edge of the display area DA. In the first non-display area NDA1 and the second non-display area NDA2, scan drivers for transmitting scan signals to scan lines and fan-out lines for connecting data lines and drive circuits may be provided.

[0220] The second non-display area NDA2 can be disposed within the display area DA, thereby being surrounded by the display area DA. The second non-display area NDA2 can surround the hole HLE formed in the display panel 20. A portion of the scan lines and data lines can be disposed within the second non-display area NDA2.

[0221] The display panel 20 may include a substrate 21, a circuit element layer (TFTL), a light-emitting element layer (EML), and a thin-film encapsulation layer (CPL) disposed on the substrate 21. The display panel 20 may also include a sensing layer and a polarizing layer disposed on the thin-film encapsulation layer (CPL).

[0222] The substrate 21, the circuit element layer TFTL, the light-emitting element layer EML, and the thin-film encapsulation layer CPL included in the display panel 20 can have a bonding Figure 7 and Figure 8The description of the cross-sectional structure of the target substrate SUB is basically the same.

[0223] The second non-display area NDA2 can be formed to surround the hole HLE. The hole HLE can be formed to pass through the front and rear surfaces of the substrate 21, the circuit element layer TFTL, the light-emitting element layer EML, and the thin-film encapsulation layer CPL of the display panel 20. That is, each of the substrate 21, the circuit element layer TFTL, the light-emitting element layer EML, and the thin-film encapsulation layer CPL can include a through-hole (or opening or hole) corresponding to the hole HLE.

[0224] Through-holes in multiple layers of the display panel 20 can be formed in the area corresponding to the hole HLE of the display device 2 using etching equipment 1. For example, through-holes in multiple inorganic or organic layers, including the circuit element layer TFTL, the light-emitting element layer EML, and the thin film encapsulation layer CPL of the display panel 20, can be formed by irradiating the area corresponding to the hole HLE with a laser beam L using etching equipment 1.

[0225] After etching the inorganic or organic layer in the target substrate SUB using etching equipment 1, a through-hole can be formed in the substrate 21 in the region corresponding to the hole HLE of the display device 2 by subsequent processes. For example, the through-hole in the substrate 21 can be formed by performing a dicing process.

[0226] The hole HLE can be generally circular in a plan view. The hole HLE can also be generally cylindrical. However, embodiments are not limited to these, and the hole HLE can also have various shapes.

[0227] Cover window 29 can be disposed on display panel 20. Cover window 29 can be disposed on display panel 20 to completely cover display area DA, first non-display area NDA1, second non-display area NDA2 and area overlapping with hole HLE.

[0228] Display device 2 may also include an optical element (OPS). The optical element (OPS) may be disposed in the aperture (HLE). Examples of optical elements (OPS) may include optical sensors such as cameras, lenses (condenser lenses or light-guiding lenses), infrared sensors, iris recognition sensors, and illuminance sensors.

[0229] Although certain embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Therefore, the inventive concept is not limited to these embodiments, but rather to the broader scope of the appended claims and various obvious modifications and equivalent arrangements as will be apparent to those skilled in the art.

Claims

1. A chuck for supporting a target substrate for a display device, wherein, The chuck comprises: a base having a first surface for supporting an object and a second surface opposite to the first surface, the first surface including a first region and a second region; and a recess formed in the second region and recessed from the first region in a thickness direction of the base, wherein the recess includes a first recess extending in a first direction and a second recess extending in a second direction intersecting the first direction, wherein an inner side surface of the recess is inclined with respect to the first surface of the base, and wherein the chuck further includes a connection electrode layer including a portion extending from the first surface of the base to the inner side surface inclined with respect to the first surface of the base.

2. The chuck according to claim 1, wherein the first recess includes a plurality of first grooves along the second direction, and the second recess includes a plurality of second grooves along the first direction.

3. The chuck according to claim 2, wherein a first distance provided between the first grooves arranged adjacent to each other in the second direction is greater than a first width of each first groove in the second direction, and a second distance provided between the second grooves arranged adjacent to each other in the first direction is greater than a second width of each second groove in the first direction.

4. The chuck according to claim 3, wherein the first distance between the first grooves is different from the second distance between the second grooves.

5. The chuck according to claim 1, wherein the chuck includes an electrostatic chuck, and the base includes: a base substrate including a flat region and a recessed region having a third recess corresponding to the recess formed in the second region; a first dielectric layer provided on one surface of the base substrate; an electrode layer provided on the first dielectric layer; and a second dielectric layer provided on the electrode layer, and wherein the connection electrode layer is provided on the first dielectric layer, and the connection electrode layer is provided on the electrode layer.

6. The chuck according to claim 5, wherein the first dielectric layer, the electrode layer, and the second dielectric layer expose at least a portion of the one surface of the base substrate in the recessed region.

7. The chuck according to claim 6, wherein the electrode layer includes a first electrode and a second electrode spaced apart from the first electrode, the first electrode and the second electrode being electrically insulated from each other.

8. An etching apparatus for manufacturing a substrate of a display device, wherein, The etching apparatus comprises: a vacuum chamber in which an etching process is performed on a target substrate having at least one processing region; a chuck provided inside the vacuum chamber to support and fix the target substrate on a first surface of the chuck; and a laser module provided outside the vacuum chamber to irradiate a laser beam onto the processing region of the target substrate, wherein the first surface of the chuck includes a first region and a second region having recesses recessed in a thickness direction of the chuck, and at least a portion of the recesses overlaps with the processing region of the target substrate, wherein an inner side surface of the recesses is inclined with respect to the first surface of the chuck, and wherein the chuck further includes a connection electrode layer including a portion extending from the first surface of the chuck to the inner side surface inclined with respect to the first surface of the chuck.

9. The etching apparatus according to claim 8, wherein the target substrate contacts the first region of the chuck and is spaced apart from the second region in a region where the recesses are provided.

10. The etching apparatus according to claim 8, wherein the chuck includes an electrostatic chuck, the electrostatic chuck includes: a base substrate including a flat region and a recessed region having third recesses corresponding to the recesses formed in the second region; a first dielectric layer provided on one surface of the base substrate; an electrode layer provided on the first dielectric layer; and a second dielectric layer provided on the electrode layer, and wherein the connection electrode layer is provided on the first dielectric layer, and the connection electrode layer is provided on the electrode layer.

11. The etching apparatus according to claim 10, wherein the first dielectric layer, the electrode layer, and the second dielectric layer expose at least a portion of the one surface of the base substrate in the recessed region.

12. The etching apparatus according to claim 10, wherein the electrode layer includes a first electrode and a second electrode spaced apart from the first electrode, the first electrode and the second electrode being electrically insulated from each other.

13. The etching apparatus according to claim 8, wherein the target substrate includes a plurality of unit cells, and each of the unit cells includes at least one processing region.

14. The etching apparatus according to claim 8, wherein the recesses include grooves formed in a grid shape.

15. The etching apparatus according to claim 14, wherein the grooves include first grooves extending in a first direction and second grooves extending in a second direction intersecting the first direction.

16. The etching apparatus according to claim 15, wherein the first grooves include a plurality of first grooves along the second direction, the second grooves include a plurality of second grooves along the first direction, and wherein a first distance provided between the first grooves adjacent to each other in the second direction is greater than a first width of each of the first grooves in the second direction, and a second distance provided between the second grooves adjacent to each other in the first direction is greater than a second width of each of the second grooves in the first direction.

17. The etching apparatus according to claim 14, wherein the grooves include a plurality of first grooves arranged along a first direction and spaced apart from each other and a plurality of second grooves arranged along a second direction intersecting the first direction and spaced apart from each other.

18. The etching apparatus of claim 8, wherein, each groove has a width that is greater than a width of the processing region.

Images