Method for manufacturing semiconductor device and semiconductor processing laminate

Abstract

The present application provides a semiconductor device manufacturing method capable of suppressing peeling at the interface between a temporary fixing tape and a semiconductor processing adhesive tape, and good pick-up of a semiconductor package, and a semiconductor processing laminate. The semiconductor device manufacturing method of the present application has a step (3) of picking up a semiconductor package having a metal film formed on the back surface and side surfaces thereof from a semiconductor processing adhesive tape in a semiconductor processing laminate in which the semiconductor package to which the semiconductor processing adhesive tape is attached is laminated on a temporary fixing tape with the semiconductor processing adhesive tape side in contact, and the semiconductor package to which the semiconductor processing adhesive tape is attached has the metal film formed on the back surface and side surfaces thereof, in a state heated to a temperature T1 satisfying the following formula (1). 100 < {Fb(T1) / Fa(T1)} (1) In formula (1), Fa(t) represents the peeling force of the semiconductor processing adhesive tape against a copper plate at temperature t, Fa(T1) represents the value of Fa(t) at temperature t = T1, Fb(t) represents the peeling force of the temporary fixing tape against the semiconductor processing adhesive tape at temperature t, and Fb(T1) represents the value of Fb(t) at temperature t = T1.

Description

TECHNICAL FIELD

[0001] The present application relates to a manufacturing method of a semiconductor device capable of suppressing peeling at the interface of a temporary fixing tape and an adhesive tape for semiconductor processing, and good pick-up of semiconductor packaging, and a laminate for semiconductor processing. BACKGROUND

[0002] In processing of electronic components such as semiconductors, in order to make the handling of the electronic components easy and not to cause breakage, the electronic components are fixed to a support plate by means of an adhesive composition, or an adhesive tape is attached to the electronic components for protection. For example, in the case where a thick film wafer cut out from a single crystal silicon of high purity or the like is ground to a prescribed thickness to make a thin film wafer, the thick film wafer is adhered to a support plate by means of an adhesive composition.

[0003] In addition, in the case where a large-area semiconductor package is cut to obtain a plurality of singulated semiconductor packages, the operation of attaching an adhesive tape to the semiconductor package is also performed. In such a process, the semiconductor package to which the adhesive tape is attached is further temporarily fixed to a tape called a dicing tape, and the semiconductor package is cut on the dicing tape together with the adhesive tape. After the cutting, the singulated semiconductor package is peeled from the dicing tape and / or the adhesive tape by a needle pick-up or the like.

[0004] For such an adhesive composition and adhesive tape for electronic components, high adhesiveness capable of firmly fixing the electronic components as much as possible in the processing process is required, and peeling without damaging the electronic components after the process is completed (hereinafter, also referred to as "high adhesion easy peeling") is required.

[0005] As a means for achieving high adhesion easy peeling, for example, Patent Literature 1 discloses an adhesive sheet which uses an adhesive in which a multifunctional monomer or oligomer having a radiation polymerizable functional group is bonded to the side chain or main chain of a polymer. By having the radiation polymerizable functional group, the polymer is cured by ultraviolet irradiation, and by using this, the adhesion is reduced by irradiating ultraviolet light at the time of peeling, and peeling without a residue can be performed.

[0006] PRIOR ART DOCUMENTS

[0007] PATENT LITERATURE

[0008] Patent Literature 1: Japanese Patent Application Laid-Open No. 5-32946 SUMMARY

[0009] PROBLEMS TO BE SOLVED BY THE INVENTION

[0010] On the other hand, with the development of high frequency of communication devices such as mobile phones, a problem of malfunction of semiconductor packages due to noise caused by high frequency arises. In particular, with the increase in device density due to the miniaturization of communication devices in recent years and the development of low voltage of devices, semiconductor packages are easily affected by noise caused by high frequency.

[0011] In order to solve this problem, for example, a shielding process of covering the back surface and the side surface of the singulated semiconductor package after dicing with a metal film is performed by sputtering or the like to block high frequency. In such a shielding process, in order to protect the circuit surface (front surface) and prevent contamination, an operation of attaching an adhesive tape to the circuit surface (front surface) of the semiconductor package is also performed. That is, the semiconductor package to which the adhesive tape is attached to the circuit surface (front surface) is further temporarily fixed to a temporary fixing tape, and the metal film is formed on the back surface and the side surface of the semiconductor package on the temporary fixing tape.

[0012] After the shielding process, the semiconductor package on which the metal film is formed on the back surface and the side surface is peeled from the temporary fixing tape and the adhesive tape by a needle pickup or the like. However, depending on the height, shape, or the like of the electrode of the circuit surface (front surface) of the semiconductor package, the pickup of the semiconductor package after the shielding process cannot be performed well.

[0013] An object of the present application is to provide a manufacturing method of a semiconductor device and a semiconductor processing laminate capable of suppressing peeling at the interface of the temporary fixing tape and the semiconductor processing adhesive tape and performing the pickup of the semiconductor package well.

[0014] Means for solving the problem

[0015] The manufacturing method of a semiconductor device of the present application has the following step (3): in a semiconductor processing laminate in which a semiconductor package to which a semiconductor processing adhesive tape is attached is laminated on a temporary fixing tape in a manner of contacting the semiconductor processing adhesive tape side and a metal film is formed on the back surface and the side surface of the semiconductor package to which the semiconductor processing adhesive tape is attached, a semiconductor package on which the metal film is formed on the back surface and the side surface is picked up from the semiconductor processing adhesive tape, and in the above step (3), the semiconductor package on which the metal film is formed on the back surface and the side surface is picked up in a state of being heated to a temperature T1 satisfying the following formula (1).

[0016] 100 < {Fb(T1) / Fa(T1)} (1)

[0017] In formula (1), Fa(t) represents the peeling force of the semiconductor processing adhesive tape against a copper plate at temperature t, Fa(T1) represents the value of Fa(t) at temperature t = T1, Fb(t) represents the peeling force of the temporary fixing tape against the semiconductor processing adhesive tape at temperature t, and Fb(T1) represents the value of Fb(t) at temperature t = T1.

[0018] Hereinafter, the present application will be described in detail.

[0019] In the pickup of the semiconductor package after the shielding treatment, peeling occurs not at the interface of the semiconductor package and the adhesive tape (semiconductor processing adhesive tape) but at the interface of the temporary fixing tape and the semiconductor processing adhesive tape, thereby causing pickup failure. In view of this problem, the present inventors focused on the "adhesive force of the semiconductor processing adhesive tape to the adherend (set to a standard copper plate)" and the "adhesive force of the temporary fixing tape to the semiconductor processing adhesive tape". The present inventors found that by picking up the semiconductor package in a state heated to a temperature at which the ratio of these adhesive forces satisfies a specific range, peeling at the interface of the temporary fixing tape and the semiconductor processing adhesive tape can be suppressed, and the pickup of the semiconductor package can be favorably performed, thereby completing the present application.

[0020] In the method for manufacturing a semiconductor device of the present application, the process (3) of picking up the semiconductor package in which a metal film is formed on the back surface and the side surface of the specific semiconductor processing laminate from the semiconductor processing adhesive tape is performed.

[0021] Here, the specific semiconductor processing laminate refers to a semiconductor processing laminate in which the semiconductor package to which the semiconductor processing adhesive tape is attached is laminated on the temporary fixing tape in a manner that the semiconductor processing adhesive tape side is in contact and a metal film is formed on the back surface and the side surface of the semiconductor package to which the semiconductor processing adhesive tape is attached. The method for obtaining such a semiconductor processing laminate is not particularly limited, and a method for obtaining the semiconductor processing laminate by performing the following process (1) and process (2) before the above process (3) is preferable. That is, in the method for manufacturing a semiconductor device of the present application, it is preferable to first perform the process (1) of temporarily fixing the semiconductor package to which the semiconductor processing adhesive tape is attached on the temporary fixing tape in a manner that the semiconductor processing adhesive tape side is in contact.

[0022] The semiconductor processing adhesive tape can be a support type having a base material and an adhesive layer laminated on at least one face of the base material, or can be a non-support type not having a base material but having an adhesive layer. Among them, from the aspect of easily adjusting the Fb(t) / Fa(t) described later and more favorably performing the pickup of the semiconductor package, a single-face support type having a base material and an adhesive layer laminated on one face of the base material is preferable. In the case where the semiconductor processing adhesive tape is a single-face support type, the base material side of the semiconductor processing adhesive tape is in contact with the adhesive face of the temporary fixing tape.

[0023] The material of the base material of the semiconductor processing adhesive tape is not particularly limited, and a heat-resistant material is preferable.

[0024] As a material of the substrate of the adhesive tape for semiconductor processing, for example, polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultrahigh molecular weight polyethylene, syndiotactic polystyrene, polyarylate, polysulfone, polyethersulfone, polyphenylene sulfide, polyether ether ketone, polyimide, polyetherimide, fluororesin, liquid crystal polymer, and the like can be given. Among them, from the aspect of excellent heat resistance, polyethylene terephthalate, polyethylene naphthalate are preferable.

[0025] The substrate of the adhesive tape for semiconductor processing preferably has an easy-adhesion layer on the surface opposite to the adhesive layer.

[0026] The easy-adhesion layer is formed on the surface opposite to the adhesive layer, i.e., the back surface, in the substrate of the adhesive tape for semiconductor processing. By providing the substrate of the adhesive tape for semiconductor processing with the easy-adhesion layer, it is easy to adjust Fb(t) / Fa(t) as described later, and the pickup of semiconductor packages can be performed more favorably.

[0027] As the easy-adhesion layer, for example, a SiOx layer, a metal oxide layer, an organic metal compound layer, a silicone compound layer, a polymerizable polymer layer, a corona treatment layer, a plasma treatment layer, and the like can be given. Among them, from the aspect of higher easy-adhesion effect, an organic metal compound layer, a corona treatment layer are preferable.

[0028] As a method of the easy-adhesion treatment using an organic compound or an inorganic compound (i.e., a method of forming the SiOx layer, the metal oxide layer, the organic metal compound layer, the silicone compound layer, the polymerizable polymer layer, and the like), for example, evaporation, coating, and the like can be given.

[0029] As a method of forming the corona treatment layer, for example, a method of performing corona treatment on the back surface of the substrate by reciprocating a film once under the conditions of output of 0.24 Kw, speed of 40 mm / min, electrode distance of 1 mm using a high-frequency power device (AGI-020 manufactured by Kasuga Electric Co., Ltd.), and the like can be given.

[0030] The substrate of the adhesive tape for semiconductor processing preferably has a bending stiffness per unit width in the TD direction at 23°C of 2.38 x 10 -7 N·m 2 / m or more and 1.50 x 10 -4 N·m 2 / m or less. By making the bending stiffness per unit width in the TD direction at 23°C within the above range, an adhesive tape for semiconductor processing that can more reliably protect an adherend and has excellent handleability can be produced. The bending stiffness per unit width in the TD direction at 23°C is more preferably 4.12 x 10 -7 N·m 2or more, further preferably 9.76 x 10 -7 N·m 2 or more, further preferably 9.76 x 10 -5 N·m 2 or more, further preferably 9.76 x 10 -5 N·m 2 or less, further preferably 1.0 x 10

[0031] Here, the TD (Transverse Direction) is a direction perpendicular to the extrusion direction when the base material is extruded into a sheet shape. Note that the bending rigidity per unit width is represented by a value obtained by dividing the product of the tensile elastic modulus E and the cross-sectional moment of inertia I by the length of the width of the base material. The tensile elastic modulus E can be measured, for example, using a viscoelastic spectrometer (e.g., DVA-200, manufactured by IT Control Corporation, etc.) under conditions of a constant-rate temperature rising tensile mode, a temperature rising rate of 10°C / min, and a frequency of 10 Hz. The cross-sectional moment of inertia I of the base material (the cross section of which is rectangular) is represented by the following formula (3).

[0032] I = (length of the width of the base material (m)) x (thickness of the base material (m)) 3 / 12 (unit m 4 ) (3)

[0033] The storage modulus of the base material of the semiconductor processing adhesive tape is not particularly limited, and is preferably 5.0 x 10 7 Pa or more and 1.0 x 10 11 Pa or less. By setting the storage modulus of the base material of the semiconductor processing adhesive tape within the above range, the base material is easily moderately bent, and thus the peeling of the semiconductor package at the time of cutting the semiconductor package together with the semiconductor processing adhesive tape can be further suppressed, and the pickup of the semiconductor package can be more favorably performed. The storage modulus of the base material of the semiconductor processing adhesive tape is more preferably 8.0 x 10 8 Pa or more, further preferably 1.0 x 10 9 Pa or more, further preferably 5.0 x 10 10 Pa or less, further preferably 5.0 x 10 9 Pa or less.

[0034] As a method for measuring the storage modulus of the base material of the above-described adhesive tape for semiconductor processing, for example, a dynamic viscoelasticity measurement, a tensile test, or the like can be given. More specifically, a test piece in a long strip shape of 10 mm in width is prepared. With respect to the obtained test piece, a tensile test is performed at a temperature of 23°C and a humidity of 50% using a tensile testing machine (for example, RTG1250A, manufactured by AND Co., Ltd., or the like) at a test speed of 300 mm / minute, and a tensile storage elastic modulus can be calculated in accordance with JIS K7161-1.

[0035] The ultraviolet transmittance of the base material of the above-described adhesive tape for semiconductor processing is not particularly limited, and in the case where the adhesive layer of the above-described adhesive tape for semiconductor processing is a photocurable adhesive layer, the ultraviolet transmittance at 405 nm is preferably 1% or more. The ultraviolet transmittance at 405 nm is more preferably 10% or more, further preferably 15% or more, and particularly preferably 50% or more. By making the ultraviolet transmittance at 405 nm be 1% or more, in the case where the adhesive layer of the above-described adhesive tape for semiconductor processing is a photocurable adhesive layer, the adhesive layer can be sufficiently cured even without using a photosensitizer. The upper limit of the ultraviolet transmittance at 405 nm is not particularly limited, and the higher the better, and is usually 100% or less.

[0036] The thickness of the base material of the above-described adhesive tape for semiconductor processing is not particularly limited, and the preferable lower limit is 5 μm, and the preferable upper limit is 200 μm. By making the thickness of the base material of the above-described adhesive tape for semiconductor processing be within the above-described range, an adhesive tape for semiconductor processing having a moderate hardness and excellent handleability can be produced. The more preferable lower limit of the thickness of the base material of the above-described adhesive tape for semiconductor processing is 10 μm, and the more preferable upper limit is 150 μm.

[0037] The adhesive constituting the adhesive layer of the above-described adhesive tape for semiconductor processing is not particularly limited, and can be any one of a non-cured adhesive or a cured adhesive. Specifically, for example, a rubber-based adhesive, an acrylic-based adhesive, a vinyl alkyl ether-based adhesive, a silicone-based adhesive, a polyester-based adhesive, a polyamide-based adhesive, a urethane-based adhesive, a styrene-diene block copolymer-based adhesive, or the like can be given. Among these, from the aspects that the heat resistance is excellent and the adjustment of the adhesive force is easy, an acrylic-based adhesive is preferable, and a cured acrylic-based adhesive is more preferable.

[0038] As the above-described cured adhesive, a photocurable adhesive that is crosslinked and cured by light irradiation, a heat-curable adhesive that is crosslinked and cured by heating, or the like can be given. Among these, from the aspects that the adherend is not easily damaged and the curing is easy, a photocurable adhesive is preferable. That is, the above-described adhesive layer can be a photocurable adhesive layer, a heat-curable adhesive layer, or the like, and is preferably a photocurable adhesive layer.

[0039] As the above-mentioned light-curable adhesive, for example, an adhesive containing a photopolymerization initiator can be mentioned, which has a polymerizability polymer as a main component. As the above-mentioned heat-curable adhesive, for example, an adhesive containing a thermal polymerization initiator can be mentioned, which has a polymerizability polymer as a main component.

[0040] The above-mentioned polymerizability polymer can be, for example, obtained by reacting a (meth)acrylic polymer having a functional group within a molecule (hereinafter, referred to as a (meth)acrylic polymer containing a functional group) which is synthesized in advance, with a compound having a functional group which reacts with the above-mentioned functional group and a radical polymerizability unsaturated bond within a molecule (hereinafter, referred to as an unsaturated compound containing a functional group).

[0041] The above-mentioned (meth)acrylic polymer containing a functional group can be, for example, obtained by copolymerizing an alkyl acrylate and / or an alkyl methacrylate having a carbon number of an alkyl group generally in the range of 2 to 18, a monomer containing a functional group, and further, if necessary, other modifying monomers which can be copolymerized with them.

[0042] The weight average molecular weight of the above-mentioned (meth)acrylic polymer containing a functional group is not particularly limited, and is generally about 200,000 to 2,000,000.

[0043] Note that the weight average molecular weight can be determined using a gel permeation chromatography method. More specifically, for example, a dilute solution obtained by adjusting the obtained polymer to 0.2% by weight with tetrahydrofuran (THF) is filtered with a filter (material: polytetrafluoroethylene, pore size: 0.2 μm). The obtained filtrate is supplied to a gel permeation chromatograph (manufactured by Waters Corporation, 2690 Separations Model, or the like), and GPC measurement is performed under conditions of a sample flow rate of 1 mL / min and a column temperature of 40°C, and the polystyrene conversion molecular weight is measured, and the weight average molecular weight (Mw) is calculated. As the column, GPC KF-806L (manufactured by Showa Denko K.K., or the like) is used, and as the detector, a differential refractometer is used.

[0044] As the above-mentioned monomer containing a functional group, for example, a carboxyl group-containing monomer such as acrylic acid or methacrylic acid, a hydroxyl group-containing monomer such as hydroxyethyl acrylate or hydroxyethyl methacrylate, an epoxy group-containing monomer such as glycidyl acrylate or glycidyl methacrylate can be mentioned. In addition, as the above-mentioned monomer containing a functional group, for example, an isocyanate group-containing monomer such as isocyanatoethyl acrylate or isocyanatoethyl methacrylate, an amino group-containing monomer such as aminoethyl acrylate or aminoethyl methacrylate, and the like can be mentioned.

[0045] As the other modifying monomer copolymerizable with the above, various monomers used in general (meth)acrylic polymers, such as vinyl acetate, acrylonitrile, styrene, and the like, can be mentioned.

[0046] As the functional group-containing unsaturated compound to be reacted with the above functional group-containing (meth)acrylic polymer, the same compounds as the above functional group-containing monomers can be used depending on the functional group of the above functional group-containing (meth)acrylic polymer. For example, in the case where the functional group of the above functional group-containing (meth)acrylic polymer is a carboxyl group, an epoxy group-containing monomer, an isocyanate group-containing monomer can be used. In the case where the functional group of the above functional group-containing (meth)acrylic polymer is a hydroxyl group, an isocyanate group-containing monomer can be used. In the case where the functional group of the above functional group-containing (meth)acrylic polymer is an epoxy group, a carboxyl group-containing monomer, an amide group-containing monomer such as acrylamide can be used. In the case where the functional group of the above functional group-containing (meth)acrylic polymer is an amino group, an epoxy group-containing monomer can be used.

[0047] In order to obtain the above functional group-containing (meth)acrylic polymer, the raw monomers are subjected to a radical reaction in the presence of a polymerization initiator. As the method of subjecting the above raw monomers to a radical reaction, i.e., the polymerization method, conventionally known methods, such as solution polymerization (boiling point polymerization or constant temperature polymerization), emulsion polymerization, suspension polymerization, bulk polymerization, and the like, can be used.

[0048] The polymerization initiator used in the radical reaction for obtaining the above functional group-containing (meth)acrylic polymer is not particularly limited, and, for example, organic peroxides, azo compounds, and the like can be mentioned. As the above organic peroxides, for example, 1,1-bis(tert-hexylperoxy)-3,3,5-trimethylcyclohexane, tert-hexyl peroxy-2-ethylhexanoate, tert-butyl peroxy-2-ethylhexanoate, tert-butyl peroxyisobutyrate, tert-butyl peroxy-3,5,5-trimethylhexanoate, tert-butyl peroxylaurate, and the like can be mentioned. As the above azo compounds, for example, azobisisobutyronitrile, azobiscyclohexanenitrile, and the like can be mentioned. These polymerization initiators can be used alone or in combination of two or more.

[0049] The above-mentioned light-curable adhesive layer preferably contains a photopolymerization initiator. The above-mentioned photopolymerization initiator can be exemplified by a photopolymerization initiator which is activated by irradiation of light having a wavelength of 250 to 800 nm. As such a photopolymerization initiator, for example, there can be mentioned a phenyl ethanone derivative compound such as methoxyphenyl ethanone, a benzoin ether compound such as benzoin propyl ether, benzoin isobutyl ether, a ketal derivative compound such as benzil dimethyl ketal, phenyl ethanone diethyl ketal, an oxaphosphorine derivative compound. In addition, there can be mentioned bis (η5-cyclopentadienyl) titanocene derivative compound, benzophenone, Michler's ketone, chlorothionone, dodecylthionone, dimethylthionone, diethylthionone, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane, and the like. These photopolymerization initiators can be used alone or in combination of two or more.

[0050] The above-mentioned heat-curable adhesive layer preferably contains a thermal polymerization initiator. As the above-mentioned thermal polymerization initiator, there can be mentioned a thermal polymerization initiator which is decomposed by heat to generate an active radical which initiates polymerization and curing. Specifically, for example, there can be mentioned dicumyl peroxide, di-t-butyl peroxide, t-butylperoxy benzoate, t-butyl hydroperoxide, benzoyl peroxide, cumyl hydroperoxide, di-cumyl hydroperoxide, p-methane hydroperoxide, di-t-butyl peroxide, and the like.

[0051] The above-mentioned thermal polymerization initiator is not particularly limited in terms of a commercially available product, and for example, there can be mentioned Perbutyl D, Perbutyl H, Perbutyl P, Perpenta H (all of which are manufactured by NOF Corporation), and the like. These thermal polymerization initiators can be used alone or in combination of two or more.

[0052] The above-mentioned adhesive layer can further contain a multifunctional oligomer or a monomer which is radically polymerizable. By containing a multifunctional oligomer or a monomer which is radically polymerizable, the light curability and the heat curability of the above-mentioned adhesive layer are improved.

[0053] The above-mentioned multifunctional oligomer or monomer is not particularly limited, and preferably has a weight average molecular weight of 10,000 or less. From the viewpoint of efficiently performing three-dimensional network formation of the above-mentioned adhesive layer based on light irradiation or heating, the above-mentioned multifunctional oligomer or monomer preferably has a weight average molecular weight of 5,000 or less and a number of radically polymerizable unsaturated bonds within the molecule of 2 to 20.

[0054] As the above-mentioned polyfunctional oligomer or monomer, for example, trimethylolpropane triacrylate, tetrahydroxymethylmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, and methacrylates thereof, and the like can be mentioned. In addition, as the above-mentioned polyfunctional oligomer or monomer, for example, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligomeric ester acrylates, and methacrylates thereof, and the like can be mentioned. These polyfunctional oligomers or monomers can be used alone or in combination of two or more.

[0055] The above-mentioned adhesive layer can further contain an inorganic filler such as fumed silica. By containing an inorganic filler, the cohesion of the above-mentioned adhesive layer is increased, the peelability of the above-mentioned adhesive tape for semiconductor processing is increased, and thus the pickup of the semiconductor package can be performed more favorably.

[0056] The above-mentioned adhesive layer preferably contains a crosslinking agent. By containing a crosslinking agent, the cohesion of the above-mentioned adhesive layer is increased, the peelability of the above-mentioned adhesive tape for semiconductor processing is increased, and thus the pickup of the semiconductor package can be performed more favorably.

[0057] The above-mentioned crosslinking agent is not particularly limited, and for example, isocyanate-based crosslinking agents, epoxy-based crosslinking agents, aziridine-based crosslinking agents, metal chelate-based crosslinking agents, and the like can be mentioned. Among them, from the aspect of further increasing the adhesive force, an isocyanate-based crosslinking agent is preferred.

[0058] The content of the above-mentioned crosslinking agent is preferably 0.1 parts by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the adhesive constituting the above-mentioned adhesive layer. By making the content of the above-mentioned crosslinking agent within the above-mentioned range, the above-mentioned adhesive can be moderately crosslinked, and the adhesive force can be increased. From the viewpoint of further increasing the adhesive force, the more preferable lower limit of the content of the above-mentioned crosslinking agent is 0.5 parts by weight, and the more preferable upper limit is 15 parts by weight, and the further preferable lower limit is 1.0 parts by weight, and the further preferable upper limit is 10 parts by weight.

[0059] The above-mentioned adhesive layer can contain known additives such as plasticizers, resins, surfactants, waxes, and particulate fillers. These additives can be used alone or in combination of two or more.

[0060] The storage modulus of the above-mentioned adhesive layer at 23°C is preferably 8.5 x 10 5 Pa or more and 1.7 x 10 9Pa or more, and further preferably 8.5 x 10 6 Pa or more, and further preferably 8.5 x 10 6 Pa or more, and further preferably 8.5 x 10 8 Pa or more, and further preferably 8.5 x 10 7 Pa or more, and further preferably 8.5 x 10

[0061] Note that, in the case where the above-mentioned adhesive is a curable adhesive, the storage modulus of the above-mentioned adhesive layer refers to that after curing. In the case of a heat-curable adhesive, the state after heating at 120°C for 1 hour and then heating at 175°C for 1 hour is set as after curing, and in the case of a photocurable adhesive, the state after irradiating the adhesive layer with ultraviolet rays of 405 nm from the substrate side using an ultrahigh-pressure mercury ultraviolet ray irradiator so that the cumulative intensity becomes 2500 mJ / cm 2

[0062] As a method for measuring the storage modulus of the above-mentioned adhesive layer at 23°C, for example, a method such as dynamic viscoelasticity measurement can be given. More specifically, a viscoelastic spectrometer (for example, DVA-200, manufactured by IT Control Corporation, etc.) can be used, and measurement can be performed under the conditions of a constant-rate temperature elevation tensile mode, a temperature elevation rate of 10°C / minute, and a frequency of 10 Hz.

[0063] The thickness of the above-mentioned adhesive layer is not particularly limited, and the preferable lower limit is 5 μm, and the preferable upper limit is 500 μm. By making the thickness of the above-mentioned adhesive layer within the above-mentioned range, the adherend can be attached with sufficient adhesion, and the adherend can be sufficiently fixed. From the viewpoint of making the adhesion good, the more preferable lower limit of the thickness of the above-mentioned adhesive layer is 10 μm, the more preferable upper limit is 300 μm, the further preferable lower limit is 15 μm, the further preferable upper limit is 250 μm, and the still further preferable upper limit is 200 μm.

[0064] The method for obtaining the semiconductor package to which the above-mentioned semiconductor processing adhesive tape is attached is not particularly limited, and the method for obtaining the semiconductor package to which the above-mentioned semiconductor processing adhesive tape is attached is preferably obtained by performing the following processes (1-1) and (1-2) before the above-mentioned process (1).

[0065] ​That is, it is preferable to perform process (1-1) of attaching the semiconductor processing adhesive tape to the circuit surface of the semiconductor package and process (1-2) of cutting the semiconductor package to which the semiconductor processing adhesive tape is attached to obtain a single piece of the semiconductor package to which the semiconductor processing adhesive tape is attached, before process (1).

[0066] The method of attaching the semiconductor processing adhesive tape is not particularly limited, and for example, a method using a laminator or the like can be given.

[0067] In the case where the adhesive layer of the semiconductor processing adhesive tape is a photocurable adhesive layer, it is preferable to perform process (1-3) of irradiating light to the adhesive layer of the semiconductor processing adhesive tape after process (1-1).

[0068] As the method of irradiating light to the adhesive layer of the semiconductor processing adhesive tape, for example, a method of irradiating ultraviolet rays of 405 nm from the substrate side to the adhesive layer in such a manner that the cumulative intensity becomes 2500 mJ / cm 2 , using an ultrahigh pressure mercury ultraviolet ray irradiator can be given. The irradiation intensity at this time is not particularly limited, and is preferably 50 to 100 mW / cm 2 .

[0069] The method of cutting is not particularly limited, and for example, a method of temporarily fixing the semiconductor package to which the semiconductor processing adhesive tape is attached to a cutting tape, mounting the cutting tape to a cutting frame, and peeling the cutting tape after singulation using a cutting device can be given. The cutting device is not particularly limited, and for example, DFD6361 manufactured by DISCO Corporation or the like can be used.

[0070] In process (1), the semiconductor package to which the semiconductor processing adhesive tape is attached thus obtained is temporarily fixed to a temporary fixing tape in such a manner that the semiconductor processing adhesive tape side is in contact.

[0071] The temporary fixing tape is not particularly limited, and an adhesive tape for temporary fixing generally used at the time of cutting or shielding treatment in the manufacturing method of semiconductor devices can be used.

[0072] The adhesion of the temporary fixing tape to a copper plate (a copper plate satisfying JIS H3100:2018, such as C1100P, manufactured by Engineering Test Service) is preferably 1.0 N / inch or more and 35 N / inch or less. By setting the adhesion of the temporary fixing tape to a copper plate within the above range, it is possible to easily adjust Fb(t) / Fa(t) described later, and thus it is possible to more favorably perform pick-up of semiconductor packages. In addition, if the adhesion to the copper plate is 1.0 N / inch or more, it is possible to further suppress peeling at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing. If the adhesion to the copper plate is 35 N / inch or less, the handleability of the temporary fixing tape is improved. The adhesion of the temporary fixing tape to a copper plate is more preferably 4 N / inch or more and 15 N / inch or less.

[0073] As a method for measuring the adhesion of the temporary fixing tape to a copper plate, for example, the following method can be given. First, the temporary fixing tape is placed on a copper plate (a copper plate satisfying JIS H3100:2018, such as C1100P, manufactured by Engineering Test Service) so that the adhesive layer faces the copper plate. The temporary fixing tape is bonded to the copper plate by reciprocating a 2-kg rubber roller at a speed of 300 mm / min once. Then, a test sample is prepared by leaving it at 23°C for 1 hour. With respect to the test sample after leaving, the adhesion to the copper plate is measured by peeling the temporary fixing tape in the 180° direction at a tensile speed of 300 mm / min in an environment of 23°C and 50% RH using an Autograph (manufactured by Shimadzu Corporation) in accordance with JIS Z0237.

[0074] The temporary fixing tape preferably has a base material and an adhesive layer laminated on one face of the base material.

[0075] The adhesive layer of the temporary fixing tape is not particularly limited, and is preferably a silicone adhesive layer. By having the silicone adhesive layer, the heat resistance of the temporary fixing tape is improved. The silicone compound constituting the silicone adhesive layer is not particularly limited, and for example, polysiloxane, addition-cured silicone, peroxide-cured silicone, and the like can be given.

[0076] The thickness of the adhesive layer of the temporary fixing tape is not particularly limited, and preferably has a lower limit of 5 μm and an upper limit of 500 μm. By setting the thickness of the adhesive layer of the temporary fixing tape within the above range, the temporary fixing tape can be attached to the adherend with sufficient adhesion, and the adherend can be fixed sufficiently. From the viewpoint of good adhesion, the thickness of the adhesive layer of the temporary fixing tape preferably has a more preferable lower limit of 10 μm, a more preferable upper limit of 300 μm, a further preferable lower limit of 15 μm, a further preferable upper limit of 250 μm, and a still further preferable upper limit of 200 μm.

[0077] The material of the substrate of the temporary fixing tape is not particularly limited, and is preferably a material having heat resistance.

[0078] As the material of the substrate of the temporary fixing tape, for example, polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultrahigh molecular weight polyethylene, syndiotactic polystyrene, polyarylate, polysulfone, polyethersulfone, polyphenylene sulfide, polyether ether ketone, polyimide, polyether imide, fluororesin, liquid crystal polymer, and the like can be given. Among them, from the viewpoint of excellent heat resistance, polyimide, polyethylene terephthalate, and polyethylene naphthalate are preferable.

[0079] The thickness of the substrate of the temporary fixing tape is not particularly limited, and preferably has a lower limit of 5 μm and an upper limit of 200 μm. By setting the thickness of the substrate of the temporary fixing tape within the above range, a temporary fixing tape having moderate hardness and excellent handleability can be produced. The thickness of the substrate of the temporary fixing tape preferably has a more preferable lower limit of 10 μm and a more preferable upper limit of 150 μm.

[0080] The commercially available product of the temporary fixing tape is not particularly limited, and for example, Kapton (registered trademark) adhesive tape 650R#50 (manufactured by Teraoka Corp.) and the like can be given.

[0081] In the method for manufacturing a semiconductor device of the present application, it is preferable to further perform a process (2) of forming a metal film on the temporary fixing tape on the back surface and the side surface of the semiconductor package to which the semiconductor processing adhesive tape is attached.

[0082] The method of forming the metal film is not particularly limited, and for example, a method of forming a film composed of stainless steel, titanium, aluminum, or the like by sputtering or the like can be given.

[0083] By performing the process (1) and the process (2), a semiconductor processing laminate in which a semiconductor package to which a semiconductor processing adhesive tape is attached is laminated on a temporary fixing tape in a manner that the semiconductor processing adhesive tape contacts the temporary fixing tape, and a metal film is formed on the back surface and the side surface of the semiconductor package to which the semiconductor processing adhesive tape is attached can be obtained.

[0084] In the method of manufacturing the semiconductor device of the present application, the process (3) of picking up the semiconductor package in which the metal film is formed on the back surface and the side surface in the above-mentioned semiconductor processing adhesive tape laminate is performed. Thereby, the semiconductor package in which the metal film is formed on the back surface and the side surface can be obtained.

[0085] In the above-mentioned process (3), the semiconductor package in which the metal film is formed on the back surface and the side surface is picked up in a state of being heated to a temperature T1 satisfying the following formula (1).

[0086] 100 < {Fb(T1) / Fa(T1)} (1)

[0087] In formula (1), Fa(t) represents the peel strength of the semiconductor processing adhesive tape against the copper plate at temperature t, Fa(T1) represents the value of Fa(t) at temperature t = T1, Fb(t) represents the peel strength of the temporary fixing tape against the semiconductor processing adhesive tape at temperature t, and Fb(T1) represents the value of Fb(t) at temperature t = T1.

[0088] Note that, in the case where the semiconductor processing adhesive tape is a single-sided support type, Fb(t) represents the peel strength of the temporary fixing tape against the back surface of the substrate of the semiconductor processing adhesive tape at temperature t.

[0089] The above-mentioned Fa(t) is an index representing the "adhesive strength of the semiconductor processing adhesive tape against the adherend (copper plate serving as a standard) at temperature t". The above-mentioned Fb(t) is an index representing the "adhesive strength of the temporary fixing tape against the semiconductor processing adhesive tape at temperature t" (in the case where the semiconductor processing adhesive tape is a single-sided support type, the adhesive strength of the temporary fixing tape against the back surface of the substrate of the semiconductor processing adhesive tape at temperature t). These adhesive strengths are reduced by heating, but the degree of reduction is different, and the above-mentioned Fa(t) has a tendency to be greatly reduced by heating compared to the above-mentioned Fb(t). That is, the above-mentioned Fb(t) / Fa(t) has a tendency to increase as t increases.

[0090] In the above-mentioned process (3), by picking up the semiconductor package in a state of being heated to a temperature at which the above-mentioned Fb(t) / Fa(t) satisfies the above-mentioned range, the above-mentioned Fa(t) can be greatly reduced compared to the above-mentioned Fb(t). Thereby, the peeling at the interface between the temporary fixing tape and the semiconductor processing adhesive tape can be suppressed, and the picking up of the semiconductor package can be performed favorably.

[0091] Note that, the standard copper plate refers to a copper plate (for example, C1100P, manufactured by Engineering Test Service) satisfying JIS H3100:2018.

[0092] In the above procedure (3), the semiconductor package can be picked up in a state of being heated to a temperature at which the above Fb(t) / Fa(t) satisfies the above range (i.e., exceeds 100), preferably in a state of being heated to a temperature at which the above Fb(t) / Fa(t) becomes 103 or more. Further, more preferably, the semiconductor package is picked up in a state of being heated to a temperature at which the above Fb(t) / Fa(t) becomes 150 or more. Further, further preferably, the semiconductor package is picked up in a state of being heated to a temperature at which the above Fb(t) / Fa(t) becomes 200 or more. The upper limit of the above Fb(t) / Fa(t) is not particularly limited, and the substantial upper limit is, for example, 1500, and more preferably, the upper limit is 750.

[0093] The value of the above Fa(t) at the temperature Tl (Fa(Tl)) is not particularly limited, and the lower limit is preferably 0.001 N / inch, and the upper limit is preferably 0.5 N / inch. By making the above Fa(Tl) be within the above range, the picking up of the semiconductor package can be performed more favorably. The more preferable lower limit of the above Fa(Tl) is 0.005 N / inch, and the further preferable lower limit is 0.01 N / inch, and the more preferable upper limit is 0.1 N / inch, and the further preferable upper limit is 0.07 N / inch.

[0094] The value of the above Fb(t) at the temperature Tl (Fb(Tl)) is not particularly limited, and the lower limit is preferably 1 N / inch, the more preferable lower limit is 5 N / inch, the further preferable lower limit is 10 N / inch, and the still further preferable lower limit is 15 N / inch. By making the above Fb(Tl) be 1 N / inch or more, the picking up of the semiconductor package can be performed more favorably. The upper limit of the value of the above Fb(t) at the temperature Tl (Fb(Tl)) is not particularly limited, and the substantial upper limit is, for example, 50 N / inch, and the more preferable upper limit is 20 N / inch.

[0095] The value of the above Fa(t) at 23°C (Fa(23°C)) is not particularly limited, and the lower limit is preferably 0.04 N / inch, and the upper limit is preferably 1.5 N / inch. By making the above Fa(23°C) be within the above range, the above Fb(t) / Fa(t) is easily adjusted, and the picking up of the semiconductor package can be performed more favorably. The more preferable lower limit of the above Fa(23°C) is 0.1 N / inch, and the more preferable upper limit is 1 N / inch.

[0096] The value of the above Fb(t) at 23°C (Fb(23°C)) is not particularly limited, and a preferable lower limit is 3 N / inch, and a preferable upper limit is 30 N / inch. By making the above Fb(23°C) fall within the above range, the above Fb(t) / Fa(t) is easily adjusted, and pickup of the semiconductor package can be performed more favorably. A more preferable lower limit of the above Fb(23°C) is 5 N / inch, and a more preferable upper limit is 7 N / inch.

[0097] The specific value of the above temperature T1 is not particularly limited, and if a temperature at which pickup of the semiconductor package is performed is taken into account, a preferable lower limit is 25°C, and a preferable upper limit is 200°C, a more preferable lower limit is 50°C, and a more preferable upper limit is 150°C.

[0098] The method of picking up the semiconductor package in a state of being heated to the above temperature T1 is not particularly limited, and for example, a method of using a die bonder, picking up while being heated to the temperature T1 by blowing warm air, a method of picking up in a state of being maintained at the temperature T1 after being heated to the temperature T1 or higher, or the like can be mentioned.

[0099] As a method of measuring the above Fa(t), for example, the following method can be mentioned. First, the above semiconductor processing adhesive tape is placed on a copper plate (for example, C1100P, manufactured by Engineering Test Service Co., Ltd.) satisfying JIS H3100:2018 with the adhesive layer opposed to the copper plate. The above semiconductor processing adhesive tape is adhered to the copper plate by reciprocating a 2-kg rubber roller at a speed of 600 mm / minute once. The temperature of the back surface (substrate side) of the above semiconductor processing adhesive tape is measured using a temperature measuring sensor (for example, manufactured by Anritsu Corporation, A-231K-01-1-TC1-ANP or the like), and the laminate is heated. Using an Autograph (manufactured by Shimadzu Corporation), the above semiconductor processing adhesive tape of the laminate heated to a temperature t is peeled in the 180° direction at a temperature t and a humidity of 50% at a stretching speed of 300 mm / minute, and the peeling force is measured.

[0100] Note that the copper plate as the adherend of the semiconductor processing adhesive tape refers to a copper plate (for example, C1100P, manufactured by Engineering Test Service Co., Ltd.) satisfying JIS H3100:2018, and is selected assuming the circuit surface of the semiconductor package.

[0101] As an example of the method for measuring the aforementioned Fb(t), the following method can be used: First, the adhesive layer of the aforementioned semiconductor processing adhesive tape is placed face-to-face with a copper plate (C1100P), and double-sided tape (Sekisui Chemicals Co., Ltd. double-sided tape 560 or equivalent) is used for bonding. The aforementioned temporary fixing tape is placed on the semiconductor processing adhesive tape with the adhesive layer facing the back side of the substrate of the aforementioned semiconductor processing adhesive tape. The temporary fixing tape is bonded to the semiconductor processing adhesive tape by reciprocating a 2 kg rubber roller at a speed of 300 mm / min once. The temperature of the back side (substrate side) of the aforementioned temporary fixing tape is measured using a temperature measuring sensor (e.g., Anritsu Keiki Co., Ltd., A-231K-01-1-TC1-ANP, etc.), and the laminate is heated. Using an Autograph (manufactured by Shimadzu Corporation), the aforementioned temporary fixing tape of the laminate heated to temperature t was peeled off along the 180° direction at a tensile speed of 300 mm / min in an environment of temperature t and relative humidity of 50%, and the peeling force was measured.

[0102] The above Fb(t) / Fa(t) can be calculated based on the above Fa(t) and above Fb(t).

[0103] When the adhesive layer of the aforementioned semiconductor processing adhesive tape is a photocurable adhesive layer, the aforementioned Fa(t) is measured by irradiating the adhesive layer of the aforementioned semiconductor processing adhesive tape with light before heating it to a temperature t after attaching the aforementioned semiconductor processing adhesive tape to a copper plate.

[0104] As a method for irradiating the adhesive layer of the aforementioned semiconductor processing adhesive tape with light, an example is to use an ultra-high pressure mercury ultraviolet irradiator to achieve a cumulative intensity of 2500 mJ / cm². 2 The method involves irradiating the adhesive layer with 405nm ultraviolet light from the substrate side. The irradiation intensity is not particularly limited, but is preferably 50–100 mW / cm². 2 .

[0105] To adjust Fb(t) / Fa(t), simply adjust the specific values ​​of Fa(t) and Fb(t).

[0106] As a method for adjusting Fa(t), besides adjusting the temperature t, other methods include adjusting the type, composition, and properties of the adhesive layer of the semiconductor processing adhesive tape as described above. As a method for adjusting Fb(t) to the aforementioned range, besides adjusting the temperature t, other methods include adjusting the type, composition, and properties of the substrate of the semiconductor processing adhesive tape as described above, and forming the aforementioned easy-adhesive layer on the surface opposite to the adhesive layer of the substrate of the semiconductor processing adhesive tape, i.e., the back side. Furthermore, methods for adjusting the type, composition, and properties of the adhesive layer of the temporary fixing tape can also be cited.

[0107] exist Figure 1 A figure schematically illustrates an example of a method for manufacturing a semiconductor device according to the present invention. Hereinafter, reference will be made to... Figure 1 The method for manufacturing the semiconductor device of the present invention will be described.

[0108] It should be noted that, in Figure 1 In the semiconductor processing adhesive tape 2, it is a single-sided support type having a substrate 2b and an adhesive layer 2a stacked on one side of the substrate 2b. However, in the semiconductor device manufacturing method of the present invention, the semiconductor processing adhesive tape 2 may also be a non-support type without a substrate 2b.

[0109] In the method for manufacturing the semiconductor device of the present invention, firstly, as... Figure 1 As shown in (a), a process (1-1) can be performed to attach semiconductor processing adhesive tape 2 to the circuit surface of semiconductor package 4.

[0110] When the adhesive layer of the aforementioned semiconductor processing adhesive tape is a photocurable adhesive layer, it is preferable to perform a step (1-3) (not shown) of irradiating the adhesive layer of the aforementioned semiconductor processing adhesive tape with light after the aforementioned step (1-1).

[0111] In the method for manufacturing the semiconductor device of the present invention, the following steps are taken: Figure 1 As shown in (b), a process (1-2) can be performed to cut the semiconductor package 4 to which the semiconductor processing adhesive tape 2 is attached, and obtain a monolithic semiconductor package 4 to which the semiconductor processing adhesive tape 2 is attached.

[0112] In the method for manufacturing the semiconductor device of the present invention, the following steps are taken: Figure 1 As shown in (c), a process (1) can be performed in which the semiconductor package 4 with the semiconductor processing adhesive tape 2 attached is temporarily fixed to the temporary fixing tape 3 in such a way that the semiconductor processing adhesive tape 2 side is in contact.

[0113] In the method for manufacturing the semiconductor device of the present invention, the following steps are taken:Figure 1 As shown in (d), a process (2) can be performed to form a metal film 5 on the back and sides of the semiconductor package 4 on which the semiconductor processing adhesive tape 2 is attached, on the temporary fixing tape 3.

[0114] By conducting Figure 1 (a)~ Figure 1 The process shown in (d) can produce a semiconductor package 4 with semiconductor processing adhesive tape 2 attached, which is stacked on a temporary fixing tape 3 in such a way that the semiconductor processing adhesive tape 2 side is in contact, and a metal film 5 is formed on the back and side of the semiconductor package 4 with semiconductor processing adhesive tape 2 attached.

[0115] In the method for manufacturing the semiconductor device of the present invention, in such a semiconductor processing laminate, such as Figure 1 As shown in (e), a process (3) is performed to pick up a semiconductor package 4 with metal films 5 formed on the back and sides from the semiconductor processing adhesive tape 2. As a result, a semiconductor package with metal films formed on the back and sides can be obtained.

[0116] In the above process (3), a semiconductor package with metal films formed on the back and sides is picked up while heated to a temperature T1 that satisfies the following formula (1).

[0117] 100<{Fb(T1) / Fa(T1)} (1)

[0118] In equation (1), Fa(t) represents the peeling force of the semiconductor processing adhesive tape on the copper plate at temperature t, Fa(T1) represents the value of Fa(t) at temperature t = T1, Fb(t) represents the peeling force of the temporary fixing tape on the semiconductor processing adhesive tape at temperature t, and Fb(T1) represents the value of Fb(t) at temperature t = T1.

[0119] Semiconductor processing laminates, which are intermediate products of the manufacturing method of the semiconductor device of the present invention, are also part of the present invention.

[0120] The semiconductor processing laminate of the present invention is a semiconductor package with a semiconductor processing adhesive tape attached, which is laminated on a temporary fixing tape in such a way that the semiconductor processing adhesive tape side is in contact with the semiconductor processing adhesive tape side, and has a temperature T2 that satisfies the following formula (1') in the temperature range of 25 to 200°C.

[0121] 100<{Fb(T2) / Fa(T2)} (1')

[0122] In equation (1'), Fa(t) represents the peeling force of the semiconductor processing adhesive tape on the copper plate at temperature t, Fa(T2) represents the value of Fa(t) at temperature t = T2, Fb(t) represents the peeling force of the temporary fixing tape on the semiconductor processing adhesive tape at temperature t, and Fb(T2) represents the value of Fb(t) at temperature t = T2.

[0123] The lower limit of the specific value of the aforementioned temperature T2 is 25°C, and the upper limit is 200°C. Regarding the specific value of the aforementioned temperature T2, considering the typical temperature during semiconductor packaging, the preferred lower limit is 50°C, and the preferred upper limit is 150°C.

[0124] The semiconductor processing laminate of the present invention can further form a metal film on the back and side of the semiconductor package to which the above-mentioned semiconductor processing adhesive tape is attached.

[0125] Invention Effects

[0126] According to the present invention, a method for manufacturing a semiconductor device and a semiconductor processing laminate are provided, which can suppress peeling at the interface between the temporary fixing tape and the semiconductor processing adhesive tape and perform good semiconductor packaging pickup. Attached Figure Description

[0127] Figure 1 (a)~ Figure 1 Figure (e) is a schematic diagram illustrating an example of a method for manufacturing a semiconductor device according to the present invention.

[0128] Figure 2 (a1)~ Figure 2 (a4) is a diagram schematically illustrating the various steps of the manufacturing method of the semiconductor device in the embodiments and reference examples. Detailed Implementation

[0129] The present invention will be described in more detail below with examples, but the present invention is not limited to these examples.

[0130] (Example 1)

[0131] (1) Synthesis of adhesive polymers

[0132] A reactor equipped with a thermometer, stirrer, and condenser was prepared. 93 parts by weight of 2-ethylhexyl acrylate (an alkyl methacrylate), 1 part by weight of acrylic acid (a functionalized monomer), 6 parts by weight of hydroxyethyl methacrylate, 0.01 parts by weight of dodecyl mercaptan, and 80 parts by weight of ethyl acetate were added to the reactor, and the reactor was heated to initiate reflux. Next, 0.01 parts by weight of 1,1-bis(tert-hexylperoxide)-3,3,5-trimethylcyclohexane was added as a polymerization initiator, and polymerization was initiated under reflux. Subsequently, 0.01 parts by weight of 1,1-bis(tert-hexylperoxide)-3,3,5-trimethylcyclohexane were added 1 hour and 2 hours after the start of polymerization, respectively. Furthermore, 0.05 parts by weight of tert-hexyl peroxypentanoate was added 4 hours after the start of polymerization, and the polymerization reaction continued. Then, 8 hours after the start of polymerization, an ethyl acetate solution of a functionalized (meth)acrylic polymer with a solid content of 55% by weight and a weight-average molecular weight of 600,000 was obtained.

[0133] To a ratio of 100 parts by weight of the resin solids component of the ethyl acetate solution containing the functionalized (meth)acrylic polymer, 3.5 parts by weight of 2-isocyanate methacrylate were added to react with the resin to obtain an adhesive polymer.

[0134] (2) Manufacturing of adhesive tape for semiconductor processing

[0135] To a ratio of 100 parts by weight of the resin solids component of the ethyl acetate solution of the adhesive polymer obtained above, add 1 part by weight of silicone compound, 3 parts by weight of inorganic filler, 10 parts by weight of urethane acrylate, 0.2 parts by weight of crosslinking agent, and 1 part by weight of photopolymerization initiator, and mix at a stirring speed of 100 rpm to obtain an adhesive solution. Next, use a doctor blade to coat the adhesive solution to a thickness of 40 μm after drying onto the release-treated surface of a polyethylene terephthalate film that has undergone a release treatment. Heat and dry at 105°C for 5 minutes to obtain an adhesive layer. Lay the obtained adhesive layer onto the corona-treated surface of substrate A, which has undergone corona treatment on one side, and cure at 40°C for 6 days to obtain an adhesive tape for semiconductor processing.

[0136] It should be noted that the following substances are used for substrate A, silicone compound, inorganic filler, urethane acrylate, crosslinking agent, and photopolymerization initiator.

[0137] Substrate A (Polyethylene terephthalate, G' = 1.7 × 10⁻⁶) 9 Pa, bending stiffness per unit width = 1.8 × 10 -5 N·m 2 / m, thickness = 50μm)

[0138] Silicone compound (EBECRYL350, manufactured by Daicel Cytec)

[0139] Inorganic packing material (silica packing material, Reolosil MT-10, manufactured by Tokuyama Corporation)

[0140] Carbamate acrylate (UN-5500, manufactured by Genjo Kogyo Co., Ltd.)

[0141] Crosslinking agent (isocyanate-based crosslinking agent, Coronate L, manufactured by Japan Urethane Industries, Ltd.)

[0142] Photopolymerization initiator (Irgacure 369, manufactured by BASF)

[0143] (3) Determination of the storage modulus G' of the adhesive layer

[0144] Similar to the manufacturing process of adhesive tape for semiconductor processing, a test sample consisting solely of an adhesive layer is prepared. A strip-shaped test piece, 10 mm wide, is then made from the test sample. An ultra-high pressure mercury ultraviolet irradiator is used to achieve a cumulative intensity of 2500 mJ / cm². 2 The adhesive layer was cured by irradiating it with 405nm ultraviolet light from the release film side of the test piece. After curing, the release films on both sides of the test piece were removed, and the results were measured using a viscoelastic spectrometer (DVA-200, manufactured by IT Measurement & Control Co., Ltd.) under constant-rate heating and tensile conditions of 10℃ / min and 10Hz. The storage modulus at 23℃ was recorded as the storage modulus of the adhesive layer.

[0145] (4) Determination of Fa(23℃) and Fa(T1)

[0146] Clean the surface of a 1mm thick copper plate (copper plate conforming to JIS H3100:2018, C1100P, manufactured by Engineering Test Service) with ethanol and allow it to dry completely. Apply semiconductor processing adhesive tape, pre-cut to a width of 25mm and a length of 10cm, to the copper plate using a 2kg roller in one pass to obtain a laminate. Irradiate the adhesive layer with 405nm ultraviolet light from the substrate side for 25 seconds using an ultra-high pressure mercury ultraviolet irradiator to cure the adhesive layer. The irradiation intensity is 100mW / cm². 2The illuminance was adjusted in a certain way. Then, in the measurement of Fa(T1), the laminate was heated using an oven preheated to temperature T1 as shown in Table 1. The temperature of the back side (substrate side) of the semiconductor processing adhesive tape was measured using a temperature measuring sensor (Anritsu Keiki Co., Ltd., A-231K-01-1-TC1-ANP), and the laminate was heated to temperature T1.

[0147] Using an Autograph (manufactured by Shimadzu Corporation), the semiconductor processing adhesive tape of the laminate was peeled off along the 180° direction at a tensile speed of 300 mm / min in an environment of 23°C or 50% humidity and 23°C. The peeling forces Fa(23°C) and Fa(T1) were measured.

[0148] (5) Manufacturing of temporary fixing straps

[0149] To a ratio of 100 parts by weight of the resin solids component of the ethyl acetate solution of the adhesive polymer obtained above, 10 parts by weight of urethane acrylate and 0.5 parts by weight of crosslinking agent were added, and the mixture was stirred at 100 rpm to obtain an adhesive solution. Next, the adhesive solution was coated with a doctor blade onto the release-treated surface of a polyethylene terephthalate film with a dried thickness of 5 μm. The film was then heated and dried at 105°C for 5 minutes to obtain an adhesive layer. This adhesive layer was then bonded to the corona-treated surface of substrate A, which had undergone corona treatment on one side, and cured at 40°C for 6 days to obtain a temporary fixing tape.

[0150] The adhesion strength of the temporary fixing strap to the copper plate (copper plate that meets JIS H3100:2018, C1100P, manufactured by Engineering Test Service) was measured, and the result was 6.5 N / inch.

[0151] (6) Determination of Fb(23℃) and Fb(T1)

[0152] In the manufacture of adhesive tape for semiconductor processing, double-sided tape (Sekisui Chemicals Co., Ltd. double-sided tape 560) is used to attach the surface of the substrate (the surface on which the adhesive layer is formed) before the adhesive layer is formed to a copper plate (C1100P). A 2kg roller is driven back and forth once to attach a temporary fixing tape, pre-cut to a width of 25mm and a length of 10cm, to the back side of the substrate (the surface on which the adhesive layer is not formed), resulting in a laminate. Then, in the determination of Fb(T1), the laminate is heat-treated using an oven preheated to temperature T1 as shown in Table 1. The temperature of the back side of the temporary fixing tape (the substrate side of the temporary fixing tape) is measured using a temperature measuring sensor (Anritsu Keiki Co., Ltd., A-231K-01-1-TC1-ANP), and the laminate is heated to temperature T1.

[0153] Using an Autograph (manufactured by Shimadzu Corporation), the temporary fixing tape of the laminate was peeled off along the 180° direction at a tensile speed of 300 mm / min in an environment of 23°C or 50% humidity and 23°C. The peeling forces Fb(23°C) and Fb(T1) were measured.

[0154] (7) Determination of PU force and PU force at temperature T1

[0155] The back side (substrate side) of the semiconductor processing adhesive tape is attached to the cutting tape, and a substrate monolithically cut to 10mm × 10mm is rolled onto its adhesive layer side. Using a benchtop tensile and compression testing machine (MCT-2150, manufactured by A&D), the monolithically cut substrate is fabricated from the back side (substrate side) of the semiconductor processing adhesive tape, and then picked up. The force required to peel off the monolithically cut substrate is measured as the PU (pick-up) force.

[0156] Regarding the PU force at temperature T1, after attaching the monolithized substrate to the semiconductor processing adhesive tape, the laminate was heat-treated using an oven preheated to temperature T1. The temperature of the back side (substrate side) of the semiconductor processing adhesive tape was measured using a temperature measuring sensor (Anritsu Keiki Co., Ltd., A-231K-01-1-TC1-ANP). Similarly, while the laminate was heated to temperature T1, the PU force at temperature T1 was measured.

[0157] (8) Manufacturing of semiconductor devices

[0158] As described below Figure 2 The processes shown in (a1) to (a4) are as follows.

[0159] Semiconductor processing adhesive tape 2 is attached to the surface of the copper foil 7a of the copper-clad laminate substrate 7 (manufactured by MITSUBISHI GAS CHEMICAL, CCL-EL190T / GEPL-190T). Figure 2 (a1)). Using an ultra-high pressure mercury ultraviolet irradiator, the adhesive layer 2a was irradiated with 405 nm ultraviolet light from the substrate 2b side for 25 seconds to cure the adhesive layer 2a. The irradiation intensity was 100 mW / cm². 2 Adjust the illuminance in a certain way.

[0160] The copper-clad laminate 7, to which the semiconductor processing adhesive tape 2 is attached, is temporarily fixed to the dicing tape 8 (manufactured by DENKA, Eleglip UPH-1510M4) by contacting the copper-clad laminate 7 side, and then mounted on the dicing frame 9. Figure 2 (a2)).

[0161] Using a cutting device (DISCO, DFD6361), the copper-clad laminate substrate 7 with semiconductor processing adhesive tape 2 attached is monolithically (chip-sized) into a 10mm square. Figure 2 (a3)).

[0162] Using an ultra-high pressure mercury ultraviolet irradiator, the cumulative intensity reached 2500 mJ / cm². 2 The cut strip 8 was cured by irradiating it with 405nm ultraviolet light at an intensity of 50mW / cm². 2 Adjust the illumination in this way. Then, peel off the cutting strip 8.

[0163] The copper-clad laminate 7, to which the monolithic semiconductor processing adhesive tape 2 is attached, is temporarily fixed to the temporary fixing tape 3 by contacting the semiconductor processing adhesive tape 2 side, and then reinstalled on the cutting frame 9. Figure 2 (a4)).

[0164] Using an oven preheated to 150°C, the copper-clad laminate 7 with the monolithized semiconductor processing adhesive tape 2 attached, along with the cutting frame 9, is subjected to a 1-hour heat treatment. It should be noted that "heating at 150°C for 1 hour" refers to the temperature and time required for the shielding process of semiconductor packaging. After the specified time, the monolithized copper-clad laminate 7 with the semiconductor processing adhesive tape 2 attached, along with the cutting frame 9, is removed and allowed to cool completely at 23°C and 50% relative humidity.

[0165] Using a die bonding device (manufactured by Canon Machinery, BestemD02), the substrate is heated to temperature T1 by blowing warm air, and while heating to the temperature T1 shown in Table 1, the monolithized copper-clad laminate 7 is picked up.

[0166] (Examples 2-8, Reference Examples 1-5)

[0167] As described in Table 1, the composition of the adhesive layer and the substrate were changed, except that the process was the same as in Example 1, to obtain an adhesive tape and a temporary fixing tape for semiconductor processing. The physical properties were measured, and a semiconductor device was manufactured, also in the same manner as in Example 1.

[0168] Substrate B (Polyethylene terephthalate, G' = 1.7 × 10⁻⁶) 9 Pa, bending stiffness per unit width = 1.4 × 10⁻⁴ N·m 2 / m, thickness = 100μm)

[0169] Substrate C (polyethylene terephthalate, G' = 1.7 × 10⁻⁶) 9Pa, bending stiffness per unit width = 2.2 × 10⁻⁶ N·m 2 / m, thickness = 25μm)

[0170] <Evaluation>

[0171] The methods for manufacturing semiconductor processing adhesive tapes, temporary fixing tapes, and semiconductor devices in the embodiments and reference examples were evaluated according to the following methods. The results are shown in Table 1.

[0172] (1) Pick up (Japanese original text: ピックアップ) evaluation

[0173] (1-1) Semiconductor packaging - interfacial debonding between adhesive tapes

[0174] Cases with a pickup force of less than 1N at temperature T1 are classified as A, cases with a pickup force of more than 1N but less than 5N are classified as B, cases with a pickup force of more than 5N but less than 10N are classified as C, and cases with a pickup force of more than 10N (monolithic unstripped substrate) are classified as D.

[0175] (1-2) Adhesion of temporary fixing tape to the back of adhesive tape

[0176] In the manufacturing of the semiconductor device described in (8), when picking up the monolithized copper-clad laminate 7, a determination is made on the peeling at the interface between the back side (substrate side) of the semiconductor processing adhesive tape 2 and the temporary fixing tape 3.

[0177] The case where the above interface is completely unpeeled is classified as A; the case where there is peeling on the above interface but less than half of the total area is classified as B; the case where there is peeling on the above interface and more than half of the total area but not completely peeled is classified as C; and the case where the semiconductor processing adhesive tape 2 is completely peeled off from the temporary fixing tape 3 is classified as D.

[0178] (2) Evaluation of other processes (excluding picking)

[0179] In the manufacturing of the semiconductor device described in (8), 50 monolithically (chip-based) copper-clad laminate substrates 7 are randomly selected, and the interface between the copper-clad laminate substrate 7 and the semiconductor processing adhesive tape 2 is observed using an optical microscope. The presence or absence of peeling at the ends is observed, and the cutting peeling is evaluated according to the following criteria.

[0180] The following conditions were categorized into three groups of 50 samples: A) no samples had an end-piece peeling thickness exceeding 300 μm; B) less than 5% of samples had an end-piece peeling thickness exceeding 300 μm; and C) more than 5% of samples had an end-piece peeling thickness exceeding 300 μm. It should be noted that if the end-piece peeling thickness is less than 300 μm, there will be less metal entrainment during sputtering, resulting in a higher yield.

[0181] Table 1

[0182]

[0183] Industrial availability

[0184] According to the present invention, a method for manufacturing a semiconductor device capable of suppressing peeling at the interface between the temporary fixing tape and the semiconductor processing adhesive tape and effectively picking up semiconductor packages, as well as a semiconductor processing laminate, are provided.

[0185] Explanation of reference numerals in the attached figures

[0186] 2: Adhesive tape for semiconductor processing

[0187] 2a: Adhesive layer

[0188] 2b: Substrate

[0189] 3: Temporary fixing strap

[0190] 4: Semiconductor Packaging

[0191] 5: Metal film

[0192] 6: Pick up the needle

[0193] 7: Copper-clad laminate substrate

[0194] 7a: Copper foil

[0195] 8: Cutting strip

[0196] 9: Cutting frame

Claims

1. A method for manufacturing a semiconductor device, characterized in that, The process (3) includes the following steps: In a semiconductor processing laminate in which a semiconductor package with a semiconductor processing adhesive tape attached is laminated onto a temporary fixing tape in such a way that the semiconductor processing adhesive tape side is in contact with the semiconductor processing adhesive tape side, and a metal film is formed on the back and side of the semiconductor package with the semiconductor processing adhesive tape attached, the semiconductor package with the metal film formed on the back and side is picked up from the semiconductor processing adhesive tape. In the process (3), a semiconductor package with metal films formed on the back and sides is picked up while heated to a temperature T1 that satisfies the following formula (1). 100<{Fb(T1) / Fa(T1)} (1) In equation (1), Fa(t) represents the peeling force of the semiconductor processing adhesive tape on the copper plate at temperature t, Fa(T1) represents the value of Fa(t) at temperature t = T1, and Fa(T1) is less than the value of Fa(t) at 23℃, i.e., Fa(23℃). Fb(t) represents the peeling force of the temporary fixing tape on the adhesive tape for semiconductor processing at temperature t, and Fb(T1) represents the value of Fb(t) at temperature t = T1.

2. The method for manufacturing a semiconductor device according to claim 1, characterized in that, Processes (1) and (2) are performed before process (3). Step (1): The semiconductor package with the semiconductor processing adhesive tape attached is temporarily fixed to the temporary fixing tape by contacting the semiconductor processing adhesive tape side. Step (2) involves forming a metal film on the back and sides of the semiconductor package to which the semiconductor processing adhesive tape is attached, on the temporary fixing tape.

3. The method for manufacturing a semiconductor device according to claim 1 or 2, characterized in that, The value of Fa(t) at temperature T1, i.e., Fa(T1), is below 0.5 N / inch.

4. The method for manufacturing a semiconductor device according to claim 1 or 2, characterized in that, The value of Fa(t) at 23℃, i.e., Fa(23℃) is above 0.04 N / inch.

5. The method for manufacturing a semiconductor device according to claim 1 or 2, characterized in that, The value of Fb(t) at 23℃ is above 3N / inch.

6. The method for manufacturing a semiconductor device according to claim 1 or 2, characterized in that, The value of Fb(t) at temperature T1 is above 1 N / inch and below 50 N / inch.

7. The method for manufacturing a semiconductor device according to claim 1 or 2, characterized in that, Perform processes (1-1) and (1-2) before process (1). Step (1-1): Apply semiconductor processing adhesive tape to the circuit surface of the semiconductor package. In step (1-2), the semiconductor package with the semiconductor processing adhesive tape attached is cut to obtain a monolithic semiconductor package with the semiconductor processing adhesive tape attached.

8. The method for manufacturing a semiconductor device according to claim 7, characterized in that, The adhesive tape for semiconductor processing has a substrate and an adhesive layer laminated on at least one side of the substrate, wherein the adhesive layer is a photocurable adhesive layer.

9. The method for manufacturing a semiconductor device according to claim 8, characterized in that, After step (1-1), step (1-3) is performed to irradiate the adhesive layer of the semiconductor processing adhesive tape with light.

10. The method for manufacturing a semiconductor device according to claim 8, characterized in that, The adhesive layer contains inorganic fillers.

11. The method for manufacturing a semiconductor device according to claim 8, characterized in that, The adhesive layer contains a crosslinking agent.

12. The method for manufacturing a semiconductor device according to claim 11, characterized in that, The content of the crosslinking agent is 0.1 parts by weight or more and 20 parts by weight or less relative to 100 parts by weight of the adhesive constituting the adhesive layer.

13. The method for manufacturing a semiconductor device according to claim 8 or 11, characterized in that, The storage modulus of the adhesive layer at 23°C is 8.5 × 10⁻⁶. 5 Pa or higher and 1.7 × 10 9 Below Pa.

14. The method for manufacturing a semiconductor device according to claim 1 or 2, characterized in that, The temporary fixing strap has an adhesion force of more than 1.0 N / inch and less than 35 N / inch to the copper plate.

15. A laminate for semiconductor processing, characterized in that, It is a semiconductor package with semiconductor processing adhesive tape attached, which is laminated on a temporary fixing tape in such a way that the semiconductor processing adhesive tape side is in contact. A temperature T2 that satisfies the following equation (1') exists in the temperature range of 25℃ to 200℃. 100<{Fb(T2) / Fa(T2)} (1') In equation (1'), Fa(t) represents the peeling force of the semiconductor processing adhesive tape on the copper plate at temperature t, Fa(T2) represents the value of Fa(t) at temperature t = T2, and Fa(T2) is less than the value of Fa(t) at 23℃, i.e., Fa(23℃). Fb(t) represents the peeling force of the temporary fixing tape on the adhesive tape for semiconductor processing at temperature t, and Fb(T2) represents the value of Fb(t) at temperature t = T2.

16. The semiconductor processing laminate according to claim 15, characterized in that, The adhesive tape for semiconductor processing has an adhesive layer containing inorganic fillers.

17. The semiconductor processing laminate according to claim 15, characterized in that, The adhesive tape for semiconductor processing has an adhesive layer containing a crosslinking agent.

18. The semiconductor processing laminate according to claim 17, characterized in that, The content of the crosslinking agent is 0.1 parts by weight or more and 20 parts by weight or less relative to 100 parts by weight of the adhesive constituting the adhesive layer.

19. The semiconductor processing laminate according to claim 17, characterized in that, The storage modulus of the adhesive layer at 23°C is 8.5 × 10⁻⁶. 5 Pa or higher and 1.7 × 10 9 Below Pa.

20. The semiconductor processing laminate according to claim 15, characterized in that, The temporary fixing strap has an adhesion force of more than 1.0 N / inch and less than 35 N / inch to the copper plate.

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