A chemically amplified photoresist and its preparation and use method

Abstract

The present invention relates to a chemically amplified photoresist and its preparation and use methods. The photoresist comprises the following components in percentage by mass: a polymer resin, 5-10% of the photoresist; a photoacid, 4-10% of the polymer resin; a quencher, 10-40% of the photoacid; a UV absorber, 0.5-5% of the polymer resin; a leveling agent, 0.1-0.5% of the photoresist; and a solvent, which makes up 100% of the total. The polymer resin comprises a first polymer resin and / or a second polymer resin; and the photoacid is selected from at least one of an ionic photoacid and a non-ionic photoacid. The preparation method comprises the following steps: mixing the components of the chemically amplified photoresist. The use method comprises the following steps: coating the chemically amplified photoresist on a silicon wafer, and sequentially performing pre-baking, exposure, post-baking, and development. The photoresist of the present invention can effectively reduce the standing wave effect, increase the verticality of the sidewalls of the photoresist pattern, and improve the resolution of the photoresist imaging.

Description

Technical Field

[0001] The present invention relates to the technical field of photoresists, and in particular to a chemically amplified photoresist and a preparation and use method thereof. Background Art

[0002] Photoresist, also known as photoresist, refers to an etching-resistant thin film material whose solubility changes when exposed to ultraviolet light, electron beam, ion beam, X-ray, etc.

[0003] When the photoresist is exposed, light passes through the photoresist and shines on the silicon (Si) substrate. At the interface between the photoresist and the substrate, the light will be reflected. These reflected lights and the incident light will interfere with each other, making the light intensity unevenly distributed along the depth of the photoresist, forming a standing wave effect.

[0004] The standing wave effect is more pronounced on deep ultraviolet photoresist because the silicon wafer surface reflects more strongly at shorter deep ultraviolet wavelengths. After exposure, streaks form on the side of the photoresist due to overexposure and underexposure.

[0005] Methods to suppress the standing wave effect include: using a multi-wavelength mixed light source for exposure; using colored photoresist is another method, that is, adding a colorant (photosensitive group or light absorber) to the photoresist to absorb reflected light, thereby weakening the standing wave effect and the multiple exposure phenomenon of the photoresist; using anti-reflective coating (ARC) and other technologies. Summary of the Invention

[0006] The purpose of the present invention is to provide a chemically amplified photoresist that can effectively reduce the standing wave effect and a preparation and use method thereof.

[0007] In order to achieve the purpose of the present invention, this application provides the following technical solutions.

[0008] In a first aspect, the present application provides a chemically amplified photoresist, comprising the following components in the following mass percentages:

[0009]

[0010]

[0011] The polymer resin includes a first polymer resin and / or a second polymer resin; the first polymer resin is a copolymer of a hydroxystyrene compound, a styrene compound and a tert-butyl acrylate compound; the second polymer resin is a copolymer of a hydroxystyrene compound and an acetal-protected hydroxystyrene compound, and the photoacid is selected from at least one of an ionic photoacid and a non-ionic photoacid.

[0012] In one embodiment of the first aspect, the photoresist further includes at least one of the following technical features:

[0013] a1) the mass ratio of the first polymer resin to the second polymer resin is 8:2 to 7:3;

[0014] a2) the weight average molecular weight of the first polymer resin is 8 to 13k;

[0015] a3) the molecular weight distribution coefficient of the first polymer resin is PDI<2.5;

[0016] a4) the first polymer resin comprises the following components in a molar ratio:

[0017] Hydroxystyrene compounds 60-65%;

[0018] Styrene compounds 15-25%;

[0019] Tert-butyl acrylate compound 15-25%;

[0020] a5) the weight average molecular weight of the second polymer resin is 8-13k;

[0021] a6) the molecular weight distribution coefficient of the second polymer resin is PDI<2.5;

[0022] a7) The second polymer resin comprises the following components in the following molar ratios:

[0023] Hydroxystyrene compounds 60-70%;

[0024] Acetal-protected hydroxystyrene compound 30-40%.

[0025] In one embodiment of the first aspect, the photoresist further includes at least one of the following technical features:

[0026] b1) the UV absorber is selected from at least one of anthracene derivative absorbers and polymeric structure absorbers;

[0027] b2) the quencher is selected from at least one of triethanolamine, tetrabutylammonium hydroxide, tri(3,6-dioxaheptyl)amine, trioctylamine, triisopropanolamine, triethylenediamine, 2-ethyl-N,N-bis(2-ethylhexyl)-1-hexylamine, 2-phenylbenzimidazole or diphenylamine;

[0028] b3) the leveling agent is selected from at least one of 3M fluorocarbon surfactant FC-4430 and Troysol S366;

[0029] b4) the solvent is selected from at least one of propylene glycol methyl ether acetate, propylene glycol methyl ether, ethyl lactate, anisole, propylene glycol monoacetate, propylene glycol monoethyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol methyl ethyl ether, butyl acetate, neopentyl acetate, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, diacetone alcohol or gamma-butyrolactone.

[0030] In one embodiment of the first aspect, the photoresist further includes at least one of the following technical features:

[0031] c1) The ionic photoacid is selected from at least one of the following structures:

[0032]

[0033] c2) The nonionic photoacid is selected from one of the following structures:

[0034]

[0035] c3) The anthracene derivative absorbent is selected from at least one of the following structures:

[0036]

[0037] c4) The polymer structure absorbent is a copolymer of a hydroxystyrene compound, an anthracene acrylate compound and a hydroxyacrylate compound.

[0038] In one embodiment of the first aspect, the polymeric structured absorbent comprises the following components in molar percentages:

[0039] Hydroxystyrene compounds 60-70%;

[0040] Anthracene acrylate compound 10-15%;

[0041] Acrylic acid hydroxyester compound 15-25%.

[0042] In a second aspect, the present application also provides a method for preparing the chemically amplified photoresist as described above, the preparation method comprising the following steps: adding the polymer resin, the photoacid, the quencher, the UV absorber and the leveling agent to a solvent in proportion, and mixing to obtain a photoresist.

[0043] In one embodiment of the second aspect, after all the raw materials are mixed, the preparation method includes filtering.

[0044] In one embodiment of the second aspect, the membrane used for filtration is a nylon membrane with a pore size of 0.45 μm+0.1 μm+0.01 μm.

[0045] In a third aspect, the present application further provides a method for using the chemically amplified photoresist as described above, the method comprising the following steps:

[0046] The chemically amplified photoresist is coated on a silicon wafer and sequentially subjected to pre-baking, exposure, post-baking and development to obtain a photolithographic pattern.

[0047] In one embodiment of the third aspect, the method of use further includes at least one of the following technical features:

[0048] d1) The pre-baking temperature is 110°C and the pre-baking time is 90s;

[0049] d2) The exposure energy is 20-25 mj / m 2 ;

[0050] d3) post-baking at 130°C for 60 seconds;

[0051] d4) The developer used in the development was 2.38% TMAH, and the development time was 30 s.

[0052] Compared with the prior art, the present invention has the following beneficial effects:

[0053] The present invention combines a first polymer resin and a second polymer resin, and simultaneously increases the absorption of reflected light through the screening of photoacid and formulation optimization, thereby effectively reducing the standing wave effect, increasing the verticality of the sidewall of the photoresist pattern, and improving the resolution of the photoresist imaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] Figure 1 This is a picture of the standing wave effect after the photoresist prepared in Example 1 is used.

[0055] Figure 2 This is a picture of the standing wave effect after the photoresist prepared in Example 2 is used.

[0056] Figure 3 This is a picture of the standing wave effect after the photoresist prepared in Example 3 is used.

[0057] Figure 4 This is a picture of the standing wave effect after the photoresist prepared in Example 4 is used.

[0058] Figure 5 This is a picture of the standing wave effect after the photoresist prepared in Comparative Example 1 is used.

[0059] Figure 6 This is a picture of the standing wave effect after the photoresist prepared in Comparative Example 2 is used.

[0060] Figure 7 This is a picture of the standing wave effect after the photoresist prepared in Comparative Example 3 is used. DETAILED DESCRIPTION

[0061] Unless otherwise indicated, implied from the context, or customary in the art, all parts and percentages in this application are based on weight, and the test and characterization methods used are current as of the filing date of this application. Where applicable, the contents of any patents, patent applications, or publications referred to in this application are incorporated herein by reference in their entirety, and their equivalent patent families are also incorporated by reference, especially for definitions of synthetic techniques, product and processing designs, polymers, comonomers, initiators, or catalysts disclosed in these documents in the art. If the definition of a specific term disclosed in the prior art is inconsistent with any definition provided in this application, the definition of the term provided in this application shall prevail.

[0062] Numerical ranges in this application are approximate values, so unless otherwise indicated, they may include numerical values ​​outside the scope. Numerical ranges include all numerical values ​​from the lower limit to the upper limit increased by 1 unit, provided that there is an interval of at least 2 units between any lower value and any higher value. For example, if the description component, physical or other properties (such as molecular weight, melt index, etc.) is 100 to 1000, it means that all individual numerical values ​​are clearly enumerated, such as 100, 101, 102, and all subranges, such as 100 to 166, 155 to 170, 198 to 200, etc. For a range comprising a numerical value less than 1 or comprising a fraction greater than 1 (such as 1.1, 1.5, etc.), 1 unit is appropriately considered to be 0.0001, 0.001, 0.01 or 0.1. For ranges containing single-digit numbers less than 10 (e.g., 1 to 5), one unit is generally considered to be 0.1. These are merely specific examples of what is intended, and all possible combinations of numerical values ​​between the lowest and highest values ​​recited are to be considered expressly stated in this application. The numerical ranges within this application provide, among other things, calcium-containing filler content, stirring temperature, and various characteristics and properties of these components.

[0063] When used with respect to chemical compounds, unless expressly stated otherwise, the singular includes all isomeric forms, and vice versa (e.g., "hexane" includes all isomers of hexane, individually or collectively). In addition, nouns using "a," "an," or "the" also include the plural unless expressly stated otherwise.

[0064] The terms "comprising", "including", "having" and their derivatives do not exclude the presence of any other components, steps or processes and are irrelevant to whether these other components, steps or processes are disclosed in this application. To eliminate any doubt, all compositions using the terms "comprising", "including", or "having" in this application may include any additional additives, excipients or compounds unless expressly stated otherwise. In contrast, the term "essentially consisting of" excludes any other components, steps or processes from the scope of any description of the term below, except those necessary for operational performance. The term "consisting of" does not include any components, steps or processes that are not specifically described or listed. Unless expressly stated otherwise, the term "or" refers to the listed members alone or in any combination thereof.

[0065] A first aspect of the present invention provides a chemically amplified photoresist comprising the following components in the following mass percentages:

[0066]

[0067] The polymer resin includes a first polymer resin and / or a second polymer resin; the first polymer resin is a copolymer of a hydroxystyrene compound, a styrene compound and a tert-butyl acrylate compound; the second polymer resin is a copolymer of a hydroxystyrene compound and an acetal-protected hydroxystyrene compound; and the photoacid is selected from at least one of an ionic photoacid and a non-ionic photoacid.

[0068] Preferably, it also includes one of the following technical features:

[0069] a1) the mass ratio of the first polymer resin to the second polymer resin is (7-12):3;

[0070] a2) the weight average molecular weight of the first polymer resin is 8 to 13k; such as 8 to 12.4k or 12.4 to 13k;

[0071] a3) the molecular weight distribution coefficient of the first polymer resin is PDI<2.5; such as 1.75 to 2.5;

[0072] a4) the first polymer resin comprises the following components in a molar ratio:

[0073] Hydroxystyrene compounds 60-65%;

[0074] Styrene compound 15-25%, such as 15-20% or 20-25%

[0075] Tert-butyl acrylate compound 15-25%, such as 15-20% or 20-25%

[0076] a5) the weight average molecular weight of the second polymer resin is 8 to 13k; such as 8 to 11.9k or 11.9 to 13k;

[0077] a6) The molecular weight distribution coefficient of the second polymer resin is PDI<2.5; such as 1.72 to 2.5

[0078] a7) The second polymer resin comprises the following components in the following molar ratios:

[0079] Hydroxystyrene compounds 60-70%;

[0080] Acetal-protected hydroxystyrene compound 30-40%.

[0081] Preferably, it also includes at least one of the following technical features:

[0082] b1) the UV absorber is selected from at least one of an uranium derivative absorber or a polymeric structure absorber;

[0083] b2) the quencher is selected from at least one of triethanolamine, tetrabutylammonium hydroxide, tri(3,6-dioxaheptyl)amine, trioctylamine, triisopropanolamine, triethylenediamine, 2-ethyl-N,N-bis(2-ethylhexyl)-1-hexylamine, 2-phenylbenzimidazole or diphenylamine;

[0084] b3) the leveling agent is selected from at least one of 3M fluorocarbon surfactant FC-4430 or Troysol S366;

[0085] b4) the solvent is selected from at least one of propylene glycol methyl ether acetate, propylene glycol methyl ether, ethyl lactate, anisole, propylene glycol monoacetate, propylene glycol monoethyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol methyl ethyl ether, butyl acetate, neopentyl acetate, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, diacetone alcohol or gamma-butyrolactone.

[0086] Preferably, it also includes at least one of the following technical features:

[0087] c1) The ionic photoacid is selected from at least one of the following structures:

[0088]

[0089] c2) The nonionic photoacid is selected from at least one of the following structures:

[0090]

[0091] c3) The anthracene derivative absorbent is selected from at least one of the following structures:

[0092]

[0093] c4) The polymer structure absorbent is a copolymer of a hydroxystyrene compound, an anthracene acrylate compound and a hydroxyacrylate compound.

[0094] Preferably, the structure is as follows:

[0095]

[0096] In one embodiment of the first aspect, the polymeric structure absorbent comprises the following components in molar percentages:

[0097] Hydroxystyrene compounds 60-70%;

[0098] Anthracene acrylate compound 10-15%;

[0099] 15-25% of acrylic acid hydroxyester compound, such as 15-20% or 20%-25%.

[0100] Preferably, the specific structure of the polymeric structure absorbent is as follows:

[0101]

[0102] The second aspect of the present invention provides a method for preparing the chemically amplified photoresist, comprising the following steps: adding the polymer resin, the photoacid, the quencher, the UV absorber and the leveling agent to a solvent in proportion, and mixing to obtain a photoresist.

[0103] Preferably, after all the raw materials are mixed, the preparation method includes filtering, such as using a 0.45 μm + 0.1 μm + 0.01 μm nylon membrane.

[0104] A third aspect of the present invention provides a method for using the chemically amplified photoresist, comprising the following steps: coating the chemically amplified photoresist on a silicon wafer, and sequentially performing pre-baking, exposure, post-baking and development to obtain a photolithographic pattern.

[0105] Preferably, it also includes at least one of the following technical features:

[0106] d1) The pre-baking temperature is 110°C and the pre-baking time is 90s;

[0107] d2) The exposure energy is 20-25 mj / m 2 ;

[0108] d3) post-baking at 130°C for 60 seconds;

[0109] d4) The developer used in the development was 2.38% TMAH, and the development time was 30 s.

[0110] In the present invention, the equipment and raw materials used can be purchased from the market or are commonly used in the art. The methods in the following examples are all conventional methods in the art unless otherwise specified.

[0111] The first polymer resin R-1 used in the following examples and comparative examples was obtained by the following synthesis method:

[0112]

[0113] Acetoxystyrene (90.0 g, 0.555 mol), styrene (19.3 g, 0.185 mol), tert-butyl acrylate (23.7 g, 0.185 mol) and methanol (140 g) were added to a 500 ml dry four-necked flask equipped with a stirrer and a condenser under nitrogen protection. The reaction system was decompressed and evacuated, and the atmosphere was replaced with nitrogen three times. The reaction solution was stirred and mixed, cooled to 0°C, and then initiator V601 (17 g) was added and stirred for 10 minutes. The reaction system was then heated to 65°C and reacted for 18 hours. After the polymerization was complete, the reaction system was cooled to room temperature.

[0114] The system was converted to a distillation apparatus. Methanol (150 g) was added to dilute the system, followed by the dropwise addition of triethylamine (15 g) and water (5 g). The system was heated to 62-65°C and allowed to react for 8 h (during which the acetyl group in the acetoxystyrene was removed to form a hydroxyl group). The mixed solution was then slowly added dropwise to 5 L of deionized water to allow precipitation to obtain a solid compound. The solid compound was collected through 40# filter paper and then dissolved in tetrahydrofuran to approximately 20%. The compound was then again precipitated in 5 L of deionized water, and the above operation was repeated twice. The solid compound was collected and dried in a vacuum oven at 45°C for 48 h, yielding a 4-hydroxystyrene-styrene-butyl acrylate terpolymer (122.4 g, weight-average molecular weight 12400, molecular weight distribution coefficient 1.75).

[0115] The second polymer resin R-2 used in the following examples and comparative examples was obtained by the following synthesis method:

[0116]

[0117] In a 500ml dry four-necked flask equipped with a stirrer and a condenser and protected by nitrogen, acetoxystyrene (90.0g, 0.555mol), P-(1-ethoxyethoxy)styrene (45.7g, 0.238mol) and solvent methanol (140g) were added. The reaction system was decompressed and evacuated, and the nitrogen was replaced three times. The reaction solution was stirred and mixed, and cooled to 0°C. Then, initiator V601 (17g) was added and stirred for 10 minutes. The reaction system was heated to 65°C and reacted for 18h. After the polymerization was complete, the reaction system was cooled to room temperature.

[0118] The system was converted to a distillation apparatus. Methanol (150 g) was added to dilute the system, followed by the dropwise addition of triethylamine (15 g) and water (5 g). The system was heated to 62-65°C and allowed to react for 8 h (during which the acetyl group in the acetoxystyrene was removed, forming a hydroxyl group). The mixed solution was then slowly added dropwise to 5 L of deionized water to allow precipitation, yielding a solid compound. The solid compound was collected through 40# filter paper and then dissolved in tetrahydrofuran to approximately 20%. The compound was then again precipitated in 5 L of deionized water, and the above procedure was repeated twice. The solid compound was collected and dried in a vacuum oven at 45°C for 48 h, yielding a 4-hydroxystyrene-P-(1-ethoxyethoxy)styrene copolymer (111.15 g, weight-average molecular weight 11,900, molecular weight distribution coefficient 1.72).

[0119] Example

[0120] The embodiments of the present invention will be described in detail below. This embodiment is implemented based on the technical solution of the present invention, and provides a detailed implementation method and specific operation process, but the protection scope of the present invention is not limited to the following embodiments.

[0121] Example 1

[0122] A chemically amplified photoresist comprises the following components in parts by weight (total 100 parts):

[0123]

[0124] Among them, the mass ratio of propylene glycol methyl ether acetate and propylene glycol methyl ether is 7:3.

[0125] The preparation process of the photoresist is as follows: add each component according to the formula, mix and stir evenly, and then filter through a 0.45μm+0.1μm+0.01μm nylon membrane to complete the photoresist preparation.

[0126] The prepared photoresist was used as follows:

[0127] After the Si substrate was smeared, photoresist 2400A was coated and pre-baked on a 110°C hot plate for 90 seconds. Then, a KrF exposure machine XT860M (Annular 0.8 / 0.75 / 0.375) was used for selective exposure (135nm Line / Space). Then, the wafer was post-baked on a 130°C hot plate for 60 seconds. After the wafer cooled to room temperature, it was developed with 2.38% TMAH developer for 30 seconds. Finally, it was rinsed with deionized water for 30 seconds to form the desired photolithographic pattern. The photolithographic pattern obtained is as follows: Figure 1 shown.

[0128] Example 2

[0129] A chemically amplified photoresist comprises the following components in parts by weight (total 100 parts):

[0130]

[0131] Wherein, the mass ratio of propylene glycol methyl ether acetate and propylene glycol methyl ether is 7:3.

[0132] The preparation method of the above-mentioned photoresist is the same as that of Example 1, and the use method of the above-mentioned photoresist is the same as that of Example 1. The obtained photoresist pattern is as shown in FIG. Figure 2 shown.

[0133] Example 3

[0134] A chemically amplified photoresist comprises the following components in parts by weight (total 100 parts):

[0135]

[0136] Wherein, the mass ratio of propylene glycol methyl ether acetate and propylene glycol methyl ether is 7:3.

[0137] The preparation method of the above-mentioned photoresist is the same as that of Example 1, and the use method of the above-mentioned photoresist is the same as that of Example 1. The obtained photoresist pattern is as shown in FIG. Figure 3 shown.

[0138] Example 4

[0139] A chemically amplified photoresist comprises the following components in parts by weight (total 100 parts):

[0140]

[0141] Wherein, the mass ratio of propylene glycol methyl ether acetate and propylene glycol methyl ether is 7:3.

[0142] The preparation method of the above-mentioned photoresist is the same as that of Example 1, and the use method of the above-mentioned photoresist is the same as that of Example 1. The photoresist pattern is obtained as shown in FIG. Figure 4 shown.

[0143] Comparative Example 1

[0144] A chemically amplified photoresist comprises the following components in parts by weight (total 100 parts):

[0145]

[0146] Among them, the mass ratio of propylene glycol methyl ether acetate and propylene glycol methyl ether is 7:3

[0147] The preparation method of the above-mentioned photoresist is the same as that of Example 1, and the use method of the above-mentioned photoresist is the same as that of Example 1. The obtained photoresist pattern is as follows Figure 5 shown.

[0148] Comparative Example 2

[0149] A chemically amplified photoresist comprises the following components in parts by weight (total 100 parts):

[0150]

[0151] Among them, the mass ratio of propylene glycol methyl ether acetate and propylene glycol methyl ether is 7:3

[0152] The preparation method of the above-mentioned photoresist is the same as that of Example 1, and the use method of the above-mentioned photoresist is the same as that of Example 1. The obtained photoresist pattern is as follows Figure 6 shown.

[0153] Comparative Example 3

[0154] A chemically amplified photoresist comprises the following components in parts by weight (total 100 parts):

[0155]

[0156]

[0157] Wherein, the mass ratio of propylene glycol methyl ether acetate and propylene glycol methyl ether is 7:3.

[0158] The preparation method of the above-mentioned photoresist is the same as that of Example 1, and the use method of the above-mentioned photoresist is the same as that of Example 1. The obtained photoresist pattern is as follows Figure 7 shown.

[0159] The specific compositions of Examples 1-4 and Comparative Examples 1-3 are shown in Table 1 below;

[0160] Table 1 Photoresist composition

[0161]

[0162] The photoresist patterns of the above-mentioned embodiments 1 to 4 and comparative examples 1 to 3 are as follows: Figures 1 to 7 As shown, from Figure 1 ~ Figure 7 It can be seen that the standing wave effect and the verticality of the sidewalls of Examples 1 to 4 of the present application are better than those of the patterns of Comparative Examples 1 to 3. In Examples 1 and 4, the first polymer resin and the second polymer resin are used in combination with ionic photoacid and non-ionic photoacid, so that the standing wave effect of the formed pattern is minimized, the verticality of the sidewalls is best, and the effect is the best. In Example 2, the first polymer resin and the second polymer are used in combination with ionic photoacid to form a smaller standing wave effect of the pattern, better verticality of the sidewalls, and better effect. In Example 3, the first polymer resin is used in combination with ionic photoacid and non-ionic photoacid to form a smaller standing wave effect of the pattern, better verticality of the sidewalls, and better effect. That is, by adding the first polymer resin and / or the second polymer resin to the chemically amplified photoresist, and then by screening the composition of ionic and / or non-ionic photoacids and optimizing the formula, which must contain the first polymer resin and the second polymer resin for use in combination, or the ionic and non-ionic photoacids for use in combination, the standing wave effect can be effectively reduced, the verticality of the sidewalls of the photoresist pattern can be increased, and the resolution of the photoresist imaging can be improved.

[0163] The above description of the embodiments is intended to facilitate understanding and application of the present application by those skilled in the art. It will be apparent that those skilled in the art can readily make various modifications to these embodiments and apply the general principles described herein to other embodiments without expending any creative effort. Therefore, the present application is not limited to the embodiments described herein, and improvements and modifications made by those skilled in the art based on the disclosure of this application without departing from the scope and spirit of this application are within the scope of this application.

Claims

1. A chemically amplified photoresist, characterized in that: The photoresist comprises the following components in percentage by mass: The polymer resin includes a first polymer resin and a second polymer resin, and the photoacid is selected from an ionic photoacid and a non-ionic photoacid; or the polymer resin includes a first polymer resin and a second polymer resin, and the photoacid is selected from an ionic photoacid or a non-ionic photoacid; or the polymer resin includes a first polymer resin or a second polymer resin, and the photoacid is selected from an ionic photoacid and a non-ionic photoacid; The first polymer resin is a copolymer of a hydroxystyrene compound, a styrene compound and a tert-butyl acrylate compound; and the second polymer resin is a copolymer of a hydroxystyrene compound and an acetal-protected hydroxystyrene compound.

2. The chemically amplified photoresist according to claim 1, wherein The photoresist further comprises at least one of the following technical features: a1) the mass ratio of the first polymer resin to the second polymer resin is 8:2 to 7:3; a2) the weight average molecular weight of the first polymer resin is 8 to 13k; a3) the molecular weight distribution coefficient of the first polymer resin is PDI<2.5; a4) the first polymer resin comprises the following components in a molar ratio: Hydroxystyrene compounds 60-65%; Styrene compounds 15-25%; Tert-butyl acrylate compound 15-25%; a5) the weight average molecular weight of the second polymer resin is 8 to 13k; a6) the molecular weight distribution coefficient of the second polymer resin is PDI<2.5; a7) The second polymer resin comprises the following components in the following molar ratios: Hydroxystyrene compounds 60-70%; Acetal-protected hydroxystyrene compound 30-40%.

3. The chemically amplified photoresist according to claim 1, wherein The photoresist further comprises at least one of the following technical features: b1) the UV absorber is selected from at least one of anthracene derivative absorbers and polymeric structure absorbers; b2) the quencher is selected from at least one of triethanolamine, tetrabutylammonium hydroxide, tri(3,6-dioxaheptyl)amine, trioctylamine, triisopropanolamine, triethylenediamine, 2-ethyl-N,N-bis(2-ethylhexyl)-1-hexylamine, 2-phenylbenzimidazole or diphenylamine; b3) the leveling agent is selected from at least one of 3M fluorocarbon surfactant FC-4430 or Troysol S366; b4) the solvent is selected from at least one of propylene glycol methyl ether acetate, propylene glycol methyl ether, ethyl lactate, anisole, propylene glycol monoacetate, propylene glycol monoethyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol methyl ethyl ether, butyl acetate, neopentyl acetate, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, diacetone alcohol or gamma-butyrolactone.

4. The chemically amplified photoresist according to claim 3, characterized in that The photoresist further comprises at least one of the following technical features: c1) The ionic photoacid is selected from at least one of the following structures, c2) The nonionic photoacid is selected from at least one of the following structures, c3) The anthracene derivative absorbent is selected from at least one of the following structures: c4) The polymer structure absorbent is a copolymer of a hydroxystyrene compound, an anthracene acrylate compound and a hydroxyacrylate compound.

5. The chemically amplified photoresist according to claim 4, characterized in that The polymeric structure absorbent comprises the following components in molar percentages: Hydroxystyrene compounds 60-70%; Anthracene acrylate compound 10-15%; Acrylic acid hydroxyester compound 15-25%.

6. A method for preparing a chemically amplified photoresist according to any one of claims 1 to 5, characterized in that: The preparation method comprises the following steps: adding the polymer resin, the photoacid, the quencher, the UV absorber and the leveling agent into a solvent in proportion, and mixing to obtain a photoresist.

7. The method for preparing a chemically amplified photoresist according to claim 6, wherein: After all the raw materials are mixed, the preparation method includes filtration.

8. The method for preparing a chemically amplified photoresist according to claim 7, wherein: The membrane used for the filtration is a nylon membrane with a pore size of 0.45 μm+0.1 μm+0.01 μm.

9. A method for using the chemically amplified photoresist according to any one of claims 1 to 5, characterized in that: The method of use comprises the following steps: The chemically amplified photoresist is coated on a silicon wafer and sequentially subjected to pre-baking, exposure, post-baking and development to obtain a photolithographic pattern.

10. The method for using the chemically amplified photoresist according to claim 9, wherein: The method of use also includes at least one of the following technical features: d1) The pre-baking temperature is 110°C and the pre-baking time is 90s; d2) The exposure energy is 20-25 mj / m 2 ; d3) post-baking at 130°C for 60 seconds; d4) The developer used in the development was 2.38% TMAH, and the development time was 30 s.

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