Pad Elevation Mechanism for Wafer Positioning Base in Semiconductor Processing

Abstract

A component used in a processing chamber for depositing a film on a wafer. The susceptor assembly includes a susceptor movably mounted on a main frame. A lift pad is rested on a susceptor top surface of the susceptor and moves together with the susceptor assembly. A lift mechanism separates the lift pad from the susceptor and includes: a hard stop fixed on the main frame; a roller attached to the susceptor assembly; a slider movably attached to the susceptor assembly; a lift pad bracket interconnected to the slider and interconnected to a pad shaft extending from the lift pad; and a rod rotatably attached to the lift pad bracket. The rod rests on the roller when not engaged with the upper hard stop. When the susceptor assembly moves upward, the rod rotates about a pin when engaged with the upper hard stop and the roller, and separates the lift pad from the susceptor top surface to process a rotational displacement.

Description

[0001] This application is a divisional application of the patent application with the application number 201780076693.4, the application date of October 11, 2017, and the invention title of "Pad Elevation Mechanism for Wafer Positioning Base for Semiconductor Processing". Technical Field

[0002] The provided embodiments relate to methods and equipment tools for processing semiconductor substrates, and more particularly, to wafer positioning bases for processing wafers at different wafer-to-base orientations. Background Art

[0003] Improved film uniformity is important in plasma enhanced chemical vapor deposition (PECVD) and plasma atomic layer deposition (ALD) techniques. The chamber systems implementing PECVD and ALD are associated with hardware features that result in non-uniform film deposition. For example, the hardware features can be associated with chamber asymmetry and base asymmetry. In addition, many processes experience azimuthal non-uniformities of various origins. As customers increasingly tend to position die closer to the wafer edge, the numerical contribution of this azimuthal non-uniformity to the overall non-uniformity increases. Despite best efforts to minimize damage and / or non-uniform deposition profiles, traditional PECVD and plasma ALD schemes still require improvement.

[0004] In particular, multi-station modules performing PECVD and ALD are characterized by large open reactors, which can contribute to azimuthal non-uniformities (e.g., NU in the θ direction). For example, some non-uniformities can cause the characteristic film thickness to tilt towards the spindle transfer mechanism at the center of the reactor. Non-uniformities also exist in single workstation modules due to non-uniform physical chamber geometries (including those caused by assembly and component manufacturing tolerances).

[0005] Traditionally, deposition non-uniformities have been compensated for by physically tilting the showerhead such that the showerhead is intentionally oriented non-parallel to the base. While not an optimal solution, it has been effective historically. However, the effectiveness of this solution is becoming increasingly limited, especially as die sizes decrease and the edges of wafers are increasingly used for die.

[0006] Processing wafers at multiple azimuths without rotating hardware features has been shown to be effective in filtering out azimuthal non-uniformities. The most basic current method in the prior art involves partially processing a wafer, removing the wafer from the processing chamber, rotating the wafer in a separate wafer handler, and then reinserting the wafer for further processing at a new azimuth. The main advantage of this method is that there is no hardware rotation within the chamber. However, this prior art solution has disadvantages in terms of throughput, contamination, and significant additional hardware.

[0007] Another solution in the prior art rotates the entire susceptor during processing. However, this solution has the disadvantage of rotating the non-uniformities associated with the susceptor along with the wafer. In this case, the susceptor can have non-uniform features that are not canceled out and will appear on the wafer during processing. Additionally, the edge effect of the wafer in the bag is another type of non-uniformity that rotates directly with the wafer when the entire susceptor rotates during processing. That is, rotating the susceptor (e.g., in ALD oxide deposition) does not significantly improve the non-uniformities. Moreover, in addition to the limited performance, rotating the entire susceptor comes at the cost of passing RF power through the rotating susceptor. This requires expensive circuitry for impedance matching through slip rings to deliver sufficient RF power to the plasma. Rotating the entire susceptor also complicates the delivery of fluids and gases (e.g., for cooling). Additionally, the heating system present in the susceptor also needs to be rotated, which increases cost and complexity.

[0008] In this context, the present disclosure has emerged. Summary of the Invention

[0009] The present embodiment relates to providing improved film uniformity during PECVD and ALD processes in single-station and multi-station systems. Embodiments of the present disclosure provide for rotating the wafer without rotating the susceptor, which advantageously filters out both the chamber asymmetry and the susceptor asymmetry.

[0010] Embodiments of the present disclosure include a component for use in a processing chamber for depositing a film on a wafer. The component includes a susceptor assembly having a susceptor movably mounted on a main frame. The component includes a lift pad configured to rest on a top surface of the susceptor of the susceptor and move with the susceptor assembly. The component includes a lift pad elevation mechanism configured to separate the lift pad from the susceptor, the lift pad mechanism including an upper hard stop, a first roller, a slider, a lift pad bracket, and a rod. The upper hard stop is fixed relative to the main frame. The first roller is attached to the susceptor assembly. The slider is movably attached to the susceptor assembly. The lift pad bracket is interconnected to the slider and to a pad shaft, where the pad shaft extends from the lift pad along a central axis. The rod is rotatably attached to the lift pad bracket by a pin, where the rod rests on the first roller in a neutral position when not engaged with the upper hard stop. Regarding the lift pad mechanism, when the susceptor assembly moves upward, the rod is configured to rotate about the pin when engaged with the upper hard stop and the first roller and separate the lift pad from the top surface of the susceptor to process a rotational displacement.

[0011] Other embodiments of the present disclosure include a component for use in a processing chamber for depositing a film on a wafer. The component includes a susceptor assembly having a susceptor movably mounted on a main frame. The component includes a lift pad configured to rest on a susceptor top surface of the susceptor and move with the susceptor assembly. The component includes a lift pad raising mechanism configured to separate the lift pad from the susceptor. The lift pad mechanism includes: an upper hard stop, a lower hard stop, a first roller, a second roller, a slider, a lift pad bracket, and a rod. The upper hard stop is fixed relative to the main frame. The lower hard stop is fixed relative to the main frame and is located below the upper hard stop relative to the main frame. The first roller is attached to the susceptor assembly. The second roller is attached to the susceptor assembly. The slider is movably attached to the susceptor assembly. The lift pad bracket is interconnected to the slider and to a pad shaft, where the pad shaft extends from the lift pad along a central axis. The rod is rotatably attached to the lift pad bracket by a pin, where the rod rests on the first roller in a neutral position when not engaged with the upper hard stop. With respect to the lift pad raising mechanism, when the susceptor assembly moves upward, the rod is configured to rotate about the pin when engaged with the upper hard stop and the first roller, and is configured to separate the lift pad from the susceptor top surface by a rotational displacement. With respect to the lift pad raising mechanism, when the susceptor assembly moves downward, the rod is configured to rotate about the pin when engaged with the lower hard stop and the second roller, and is configured to separate the lift pad from the susceptor by an end effector entry displacement.

[0012] Other embodiments of the present disclosure include a component for use in a processing chamber for depositing a film on a wafer. The component includes a susceptor assembly that includes a susceptor movably mounted on a main frame. The component includes a lift pad configured to rest on a susceptor top surface of the susceptor and move with the susceptor assembly. The component includes a lift pin assembly that includes a plurality of lift pins that extend through a plurality of susceptor shafts configured in the susceptor. The component includes a lift pad raising mechanism configured to separate the lift pad from the susceptor, wherein the lift pad raising mechanism includes an upper hard stop, a first roller, a slider, a lift pad bracket, and a rod. The upper hard stop is fixed relative to the main frame. The first roller is configured to be attached to the susceptor assembly. The slider is configured to be movably attached to the susceptor assembly. The lift pad bracket is configured to be interconnected to the slider and to a pad shaft, wherein the pad shaft extends from the lift pad along a central axis. The rod can be configured to be rotatably attached to the lift pad bracket by a pin, wherein the rod rests on the first roller in a neutral position when not engaged with the upper hard stop. With respect to the lift pad raising mechanism, when the susceptor assembly moves upward, the rod is configured to rotate about the pin when engaged with the upper hard stop and the first roller and separate the lift pad from the susceptor top surface by a rotational displacement.

[0013] In another embodiment, a component for use in a processing chamber for depositing a film on a wafer is described. The component includes: means for movably mounting a susceptor assembly including a susceptor to a main frame; means for moving a lift pad configured to rest on a susceptor top surface of the susceptor together with the susceptor assembly; and means for separating the lift pad from the susceptor, the means for separating the lift pad from the susceptor including: means for fixing an upper hard stop relative to the main frame; means for attaching a first roller to the susceptor assembly; means for movably attaching a slider to the susceptor assembly; means for interconnecting a lift pad bracket to the slider and to a pad shaft, wherein the pad shaft extends from the lift pad along a central axis; and means for rotatably attaching a rod to the lift pad bracket by a pin, wherein the rod rests on the first roller in a neutral position when not engaged with the upper hard stop; wherein, when the susceptor assembly moves upward, the rod is configured to rotate about the pin when engaged with the upper hard stop and the first roller and separate the lift pad from the susceptor top surface by a rotational displacement.

[0014] The component further includes embodiments. In one embodiment, the component further includes: means for attaching the base bracket to the base and means for movably attaching the base bracket to the main frame, wherein the base bracket is configured to move the base relative to the main frame along the central axis; and means for causing a central shaft to extend along the central axis from the base, the central shaft being configured to move with the base; wherein the pad shaft is configured to separate the lift pad from the base and is positioned within the central shaft. Further, in one embodiment, when the rod rotates about the pin, the lift pad bracket and the slider move upward together relative to the base assembly such that the lift pad is configured to move upward along the central axis relative to the top surface of the base. Additionally, in one embodiment, when the rod rotates about the pin, the lift pad and the base assembly move in a 2-to-1 ratio. Further, in one embodiment, when the rod is in the neutral position and not engaged with the upper hard stop, there is no relative movement between the rod and the base assembly. Additionally, in one embodiment, the means for moving the lift pad further includes means for causing the top surface of the pad to extend from the central axis and means for resting the bottom surface of the pad on the top surface of the base, the top surface of the pad being configured to support the wafer when the wafer is placed thereon. Additionally, in one embodiment, the diameter of the top surface of the pad is less than the diameter of the wafer. Further, in one embodiment, the diameter of the top surface of the pad is sized substantially the same as the diameter of the wafer. Additionally, in one embodiment, the means for moving the lift pad includes rotating the lift pad relative to the top surface of the base when it is separated from the base between at least a first angular orientation and a second angular orientation. Additionally, in one embodiment, the means for interconnecting the lift pad bracket to the slider and the pad shaft includes means for interconnecting the lift pad bracket to an iron seal assembly interconnected to the pad shaft, wherein the iron seal assembly is configured to provide a vacuum seal around the pad shaft whether the pad shaft rotates or not.

[0015] In yet another embodiment, another component for use in a processing chamber for depositing a film on a wafer is described. The component includes: means for movably mounting a susceptor assembly including a susceptor on a main frame; means for resting a lift pad on a top surface of the susceptor of the susceptor assembly and moving the lift pad with the susceptor assembly; and means for separating the lift pad from the susceptor. The means for separating the lift pad from the susceptor includes: means for translating a rod assembly relative to the susceptor assembly when actuated; means for an iron seal assembly about a pad axis and means for the iron seal assembly to provide a vacuum seal about the pad axis, the iron seal assembly being interconnected to the rod assembly; and means for interconnecting a yoke assembly to the rod assembly and means for the yoke assembly to apply equal forces to opposite sides of the iron seal assembly to counteract a moment applied to the iron seal assembly when the rod assembly is actuated.

[0016] The component further includes an embodiment. In one embodiment, the apparatus for translating the rod assembly includes: means for securing an upper hard stop relative to the main frame; means for attaching a first roller to the base assembly; means for movably attaching a slider movably to the base assembly; means for interconnecting a lift pad bracket to the slider and to a pad shaft, where the pad shaft extends from the lift pad along a central axis; and means for rotatably attaching a rod to the lift pad bracket by a pin, where the rod rests on the first roller in a neutral position when not engaged with the upper hard stop; wherein, when the base assembly moves upward, the apparatus is configured to cause the rod to rotate about the pin when engaged with the upper hard stop and the first roller and to separate the lift pad from the top surface of the base by a rotational displacement. In one embodiment, the component further includes: means for attaching the iron seal assembly to the pad shaft at a first end of the iron seal assembly, where the iron seal assembly includes a first connector arm and a second connector arm located at a second end opposite the first end of the iron seal assembly, the first connector arm and the second connector arm being located on opposite sides of the iron seal assembly and equidistant from the pad shaft; and means for the yoke assembly to contact the iron seal assembly at the first connector arm and the second connector arm, and means for the yoke assembly to apply equal forces to the first connector arm and the second connector arm, where the first connector arm and the second connector arm are positioned 180° apart about the central axis. In one embodiment, the means for causing the yoke assembly to contact the iron seal assembly includes: means for rotatably attaching a yoke base to the lift pad bracket by a second pin, where the yoke base is rotatable about a pin axis; means for attaching a yoke arm to the yoke base and extending from the yoke base parallel to the pin axis, the yoke arm being offset from the pin by a radial displacement, where the yoke arm is rotatable about the pin axis; and means for providing a fork end to the yoke arm away from the yoke base, the fork end including a first fork extension configured to contact the first connector arm and a second fork extension configured to contact the second connector arm. In one embodiment, the means for separating the lift pad from the base further includes: means for attaching a rotary motor to the pad shaft by a belt, both the belt and the motor being configured to cause the pad shaft to rotate about the central axis; and means for attaching a belt drive disk of the iron seal assembly to the belt and to the pad shaft.In one embodiment, the apparatus for movably mounting the base assembly further includes: means for attaching the base bracket to the base and means for movably attaching the base bracket to the main frame, wherein the base bracket is configured to move the base relative to the main frame along the central axis; means for causing a central shaft to extend along the central axis from the base, the central shaft being configured to move with the base; and means for separating the lift pad from the base using the spacer shaft, and wherein the spacer shaft is positioned within the central shaft. In one embodiment, when the rod rotates about the pin, the apparatus is configured to movably slide the lift pad bracket and move upward together relative to the base assembly such that the lift pad is configured to move upward along the central axis relative to the top surface of the base. In another embodiment, when the rod is in the neutral position and not engaged with the upper hard stop, there is no relative movement between the rod and the base assembly. In one embodiment, the diameter of the top surface of the pad is less than the diameter of the wafer. In one embodiment, the means for separating the lift pad from the base includes means for causing the lift pad to rotate relative to the top surface of the base when it is separated from the base between at least a first angular orientation and a second angular orientation.

[0017] After reading the entire specification and claims, those skilled in the art will appreciate these and other advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The embodiments may be best understood by reference to the following description in conjunction with the accompanying drawings.

[0019] Figure 1 A substrate processing system is shown that is configured to process wafers, e.g., to form a film thereon.

[0020] Figure 2 A top view of a multi-station processing tool according to one embodiment is shown, where four processing stations are provided.

[0021] Figure 3 A schematic view of an embodiment of a multi-station processing tool having an in-bound load lock and an out-bound load lock according to one embodiment is shown.

[0022] Figure 4 A substrate processing system including a lift pad and a base configuration according to one embodiment of the present disclosure is shown, where the lift pad is sized to generally match the wafer.

[0023] Figure 5A is a cross-sectional view of a Figure 4 substrate processing system according to one embodiment of the present disclosure.

[0024] Figure 5B is a cross-sectional view of a substrate processing system according to an embodiment of the present disclosure, showing a lift pad and a susceptor configuration, where the lift pad is sized to generally match the wafer, and where the susceptor and the lift pad are in a level such that lift pin extensions can be used for wafer transfer. Figure 4

[0025] Figure 5C is a view of the interface between a lift pad and a susceptor according to an embodiment of the present disclosure, including a pad gap that sets a minimum contact area (MCA).

[0026] Figure 6 shows a substrate processing system including a lift pad and a susceptor configuration according to an embodiment of the present disclosure, where the lift pad is smaller than the wafer.

[0027] Figure 7A is a perspective view of a substrate processing system including a lift pad and a susceptor configuration according to an embodiment of the present disclosure, where the lift pad is smaller than the wafer. Figure 6

[0028] Figure 7B is a cross-sectional view of a substrate processing system including a lift pad and a susceptor configuration according to an embodiment of the present disclosure, where the lift pad is smaller than the wafer. Figure 6

[0029] Figure 7C is a cross-sectional view of a substrate processing system including a lift pad and a susceptor configuration according to an embodiment of the present disclosure, where the lift pad is smaller than the wafer. Figure 6

[0030] Figure 7D is a cross-sectional view of a lift pad to susceptor interface in a substrate processing system including a lift pad and a susceptor configuration according to an embodiment of the present disclosure, where the lift pad is smaller than the wafer. Figure 6

[0031] Figure 7E is a perspective view of the top surface of a lift pad in a substrate processing system including a lift pad and a susceptor configuration according to an embodiment of the present disclosure. Figure 6

[0032] Figure 7F is a perspective view of the bottom surface of a lift pad in a substrate processing system including a lift pad and a susceptor configuration according to an embodiment of the present disclosure. Figure 6

[0033] Figure 8is a flow chart showing a method for operating a processing chamber configured to deposit a film on a wafer, wherein the method enables the wafer to be rotated in the processing chamber during processing without rotating the pedestal, which advantageously filters out both the chamber asymmetry and the pedestal asymmetry.

[0034] Figure 9A and 9B is a diagram showing the sequence of movement of a lift pad and pedestal configuration according to an embodiment of the present disclosure, wherein the lift pad is sized to generally match the wafer and includes rotating the wafer in the processing chamber during processing without rotating the pedestal, which advantageously filters out both the chamber asymmetry and the pedestal asymmetry.

[0035] Figure 9C is a diagram showing the orientation of the lift pad relative to the pedestal in a lift pad and pedestal configuration during a first processing sequence, a rotation sequence, and a second processing sequence according to an embodiment of the present disclosure, wherein the lift pad is sized to generally be the size of the wafer.

[0036] Figure 10A and 10B is a diagram showing the sequence of movement of a lift pad and pedestal configuration according to an embodiment of the present disclosure, wherein the lift pad is smaller than the wafer, wherein the lift pad is configured to allow (e.g., via an end effector arm) the wafer to be transported, and includes rotating the wafer in the processing chamber during processing without rotating the pedestal, which advantageously filters out both the chamber asymmetry and the pedestal asymmetry.

[0037] Figure 10C is a diagram showing the sequence of movement of a lift pad and pedestal configuration according to an embodiment of the present disclosure and including a lift pin assembly, wherein the lift pad is smaller than the wafer and includes rotating the wafer in the processing chamber during processing without rotating the pedestal, which advantageously filters out both the chamber asymmetry and the pedestal asymmetry.

[0038] Figure 10D is a diagram showing the orientation of the lift pad relative to the pedestal in a lift pad and pedestal configuration during a first processing sequence, a rotation sequence, and a second processing sequence according to an embodiment of the present disclosure, wherein the lift pad is smaller than the wafer.

[0039] Figure 11A is a perspective view of a substrate processing system according to an embodiment of the present disclosure, which includes a lift pad and pedestal configuration and shows a short-stroke lift pad raising mechanism, wherein the lift pad may be sized substantially similar to or smaller than the wafer.

[0040] Figure 11B is according to an embodiment of the present disclosure Figure 11APerspective view of a substrate processing system, which includes a lift pad and a pedestal configuration, and shows components of a short-stroke lift pad raising mechanism.

[0041] Figure 12A is a perspective view of a lift pad raising mechanism of a substrate processing system including Figure 11A - 11B a lift pad and a pedestal configuration according to an embodiment of the present disclosure.

[0042] Figure 12B is a diagram showing Figure 11A - 11B the movement sequence of a short-stroke pad raising mechanism of a lift pad and a pedestal configuration according to an embodiment of the present disclosure, and shows that the lift pad is raised by the upward movement of the pedestal to accommodate the rotation of the lift pad, and the lift pad is raised by the downward movement of the pedestal to facilitate the entry of the end effector for wafer transfer.

[0043] Figure 13 is a perspective view of a lift pad raising mechanism of 12A according to an embodiment of the present disclosure, and more specifically shows the interface between the slider and the yoke, which provides the movement of the lift pad relative to the pedestal.

[0044] Figure 14A is a perspective view of a Figure 12A lift pad raising mechanism according to an embodiment of the present disclosure, and more specifically shows the interface between the yoke and the iron seal assembly, which provides the movement of the lift pad relative to the pedestal.

[0045] Figure 14B is a perspective view of a Figure 14A yoke connected to the iron seal assembly according to an embodiment of the present disclosure.

[0046] Figure 14C is a perspective view of a clamping mechanism according to an embodiment of the present disclosure, which provides a link between the iron seal assembly and the pad shaft of the lift pad, so that the movement of the iron seal assembly is converted into the movement of the lift pad.

[0047] Figure 14D is a perspective view of a Figure 14C fixture in the clamping mechanism according to an embodiment of the present disclosure.

[0048] Figure 15A is a perspective view of a substrate processing system including a lift pad and a pedestal configuration according to an embodiment of the present disclosure, wherein a lift pin assembly performs wafer transfer, and shows another short-stroke pad raising mechanism, which enables the lift pad to be raised relative to the pedestal by the upward movement of the pedestal to accommodate the rotation of the lift pad, wherein the size of the lift pad can be substantially similar to or smaller than the wafer.

[0049] Figure 15B is a perspective view of aFigure 15A Perspective view of a substrate processing system, which includes lift pads and a susceptor configuration, and shows components of a short-stroke pad lift mechanism.

[0050] Figure 15C is according to an embodiment of the present disclosure Figure 15A Perspective view of a lift pad lift mechanism of, and more particularly shows the interface between a rod and a ferro-seal assembly, which provides movement of the lift pad relative to the susceptor.

[0051] Figure 15D is according to an embodiment of the present disclosure Figure 15A Perspective view of a lift pad lift mechanism of, and more particularly shows the interface between a yoke and a susceptor bracket, which provides movement of the lift pad relative to the susceptor.

[0052] Figure 16A shows according to an embodiment of the present disclosure Figure 15A a diagram of the movement of a lift pad lift mechanism at a point just before the lift pad separates from the susceptor.

[0053] Figure 16B shows according to an embodiment of the present disclosure Figure 15A a diagram of the movement of a lift pad lift mechanism at a point after the lift pad separates from the susceptor.

[0054] Figure 17A shows a high-temperature bearing assembly of a lift pad and susceptor configuration according to an embodiment of the present disclosure.

[0055] Figure 17B is according to an embodiment of the present disclosure Figure 17A Perspective view of a high-temperature bearing assembly of.

[0056] Figure 17C Shows an outer sapphire bushing of a high-temperature bearing assembly having an annular shape according to an embodiment of the present disclosure.

[0057] Figure 17D Shows an inner sapphire bushing of a high-temperature bearing assembly having an annular shape according to an embodiment of the present disclosure.

[0058] Figure 18 Shows a control module for controlling the above system. Specific embodiments

[0059] Although, for purposes of illustration, the following detailed description contains many specific details, those of ordinary skill in the art will understand that many variations and changes to the following details are within the scope of the present disclosure. Accordingly, aspects of the present disclosure described below are set forth without loss of generality of the claims that follow this specification and without imposing limitations on the claims that follow this specification.

[0060] Generally, various embodiments of the present disclosure describe systems and methods for providing improved film uniformity during wafer processing (e.g., PECVD and ALD processing) in single-station and multi-station systems. In particular, embodiments of the present disclosure provide for rotating a wafer without rotating the susceptor in order to filter out both chamber asymmetries and susceptor asymmetries. In this way, azimuthal non-uniformities caused by chamber asymmetries and susceptor asymmetries are minimized to achieve film uniformity across the entire wafer during processing (e.g., PECVD, ALD, etc.).

[0061] With the above general understanding of the various embodiments, example details of the embodiments will now be described with reference to the various figures. Elements and / or components with like numbers in one or more of the figures are intended to generally have the same configuration and / or function. Additionally, the figures may not be drawn to scale and are intended to illustrate and emphasize novel concepts. It will be apparent that embodiments of the invention may be practiced without some or all of these specific details. In other instances, well-known processing operations have not been described in detail so as not to unnecessarily obscure embodiments of the invention.

[0062] Figure 1 A reactor system 100 is shown that can be used to deposit films on a substrate, such as those formed in an atomic layer deposition (ALD) process. These reactors can use two or more heaters, and a common terminal configuration can be used in this exemplary reactor to control temperature to achieve uniformity or customized settings. More specifically, Figure 1 A substrate processing system 100 is shown that is used to process a wafer 101. The system includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. A central post is configured to support a susceptor 140, which is a powered electrode in one embodiment. The susceptor 140 is electrically coupled to a power supply 104 via a matching network 106. The power supply is controlled by a control module 110 (e.g., a controller). The control module 110 is configured to operate the substrate processing system 100 by executing a process input and control device 108. The process input and control device 108 can include process recipes, such as power levels, timing parameters, process gases, mechanical movement of the wafer 101, etc., to deposit or form a film on the wafer 101.

[0063] The central column further includes lift pins (not shown), each lift pin being actuated by a corresponding lift pin actuating ring 120, and the lift pin actuating ring 120 being controlled by a lift pin control device 122. The lift pins are used to lift the wafer 101 from the susceptor 140 so that the end effector can pick up the wafer and lower the wafer 101 after the wafer 101 is placed by the end effector. The substrate processing system 100 further includes a gas supply manifold 112 that is connected to a process gas 114, such as a source of gas chemicals from a facility. Depending on the process being performed, the control module 110 controls the delivery of the process gas 114 via the gas supply manifold 112. Then, the selected gas is caused to flow into the showerhead 150 and is distributed in the volume of space defined between the face of the showerhead 150 facing the wafer 101 and the wafer 101 resting on the susceptor 140. In an ALD process, the gas can be a reactant selected to adsorb or react with the adsorbed reactant.

[0064] In addition, the gases can be pre-mixed or not pre-mixed. Appropriate valves and mass flow control mechanisms can be employed to ensure the delivery of the correct gases during the deposition and plasma processing stages of the process. The process gas is exhausted from the chamber. A vacuum pump (e.g., a single- or two-stage mechanical dry pump and / or a turbomolecular pump) pumps the process gas out and maintains an appropriate low pressure inside the reactor via a closed-loop controlled flow restricting device (e.g., a throttle valve or a swing valve).

[0065] A carrier ring 200 is also shown surrounding an outer region of the susceptor 140. The carrier ring 200 is configured to be located above a carrier ring support region that is a step down from the wafer support region at the center of the susceptor. The carrier ring includes an outer edge side of its disk structure, such as an outer radius, and a wafer edge side of its disk structure, such as an inner radius, that is closest to the location where the wafer 101 is located. The wafer edge side of the carrier ring includes a plurality of contact support structures that are configured to lift the wafer 101 when the carrier ring 200 is lifted by the support forks 180. Thus, the carrier ring 200 is lifted together with the wafer 101 and can be rotated to another station, e.g., in a multi-station system. In other embodiments, the chamber is a single-station chamber.

[0066] Figure 2A top view of a multi-station processing tool is shown, where four processing stations are provided. This top view is of the lower chamber portion 102b (e.g., the top chamber portion 102a is removed for illustration), where the four stations are accessed by the spider forks 226. Each spider fork or fork includes first and second arms, each arm being positioned around a portion of each side of the base 140. In this view, the spider forks 226 are drawn in dashed lines to indicate that they are located below the carrier ring 200. The spider forks 226 using an engagement and rotation mechanism are configured to simultaneously lift and raise the carrier ring 200 from the stations (i.e., from the lower surface of the carrier ring 200), and then rotate at least one or more stations to the next position before lowering the carrier ring 200 (where at least one of the carrier rings supports the wafer 101), so that further plasma processing, treatment, and / or film deposition can be performed on the corresponding wafer 101.

[0067] Figure 3 A schematic diagram of an embodiment of a multi-station processing tool 300 having an in-station load lock 302 and an out-station load lock 304 is shown. The robot arm 306 is configured to move a substrate from a cassette loaded through a susceptor 308 to the in-station load lock 302 via an atmospheric port 310 at atmospheric pressure. The in-station load lock 302 is coupled to a vacuum source (not shown) such that the in-station load lock 302 can be evacuated when the atmospheric port 310 is closed. The in-station load lock 302 also includes a chamber transfer port 316 that interfaces with the processing chamber 102b. Thus, when the chamber transfer port 316 is open, another robot arm (not shown) can move the substrate from the in-station load lock 302 to the base 140 of the first processing station for processing.

[0068] The depicted processing chamber 102b includes four processing stations, numbered 1 to 4 in the Figure 3 shown embodiment. In some embodiments, the processing chamber 102b can be configured to maintain a low-pressure environment such that substrates can be transferred between processing stations using the carrier ring 200 without experiencing vacuum breakage and / or air exposure. Figure 3 Each processing station depicted in the

[0069] Figure 3 also includes a processing station substrate support (shown as 318 at station 1) and a processing gas delivery line inlet.

[0070] Wafer positioning lifting pad and base configuration

[0071] Figure 4 A substrate processing system including a lift pad and a susceptor configuration 400 according to an embodiment of the present disclosure is shown, wherein the lift pad 430 is sized to generally match a wafer (not shown) disposed thereon. In some embodiments, the lift pad 430 is sized such that it can be integrated with a carrier ring assembly. The lift pad and susceptor configuration 400 can be implemented within Figures 1 - 3 a system, including within multi-station and single-station processing tools.

[0072] The lift pad and susceptor configuration 400 includes a lift pad 430 controlled by a lift pad control device 455 and a susceptor 140' controlled by a susceptor control device 450. A central axis 510' is coupled to the susceptor 140', and a pad axis 560 is coupled to the lift pad 430. The susceptor control device 450 controls the movement of the central axis 510' to cause movement in the susceptor 140'. For example, the susceptor control device 450 controls the movement (e.g., up and down along the central axis) of the susceptor 140' during pre-treatment, treatment, and post-treatment sequences. The lift pad control device 455 controls the movement of the lift pad axis 560 to cause movement in the lift pad 430. For example, the lift pad control device 455 controls the movement (e.g., up and down along the central axis 471 and rotation about the central axis 471) of the lift pad 430 during pre-treatment, treatment, and post-treatment sequences. In particular, compared to rotating the entire susceptor 140', the lift pad and susceptor configuration 400 provides wafer rotation with significantly reduced hardware rotation characteristics. That is, since the susceptor 140' and / or the chamber (not shown) remain fixed relative to the lift pad 430 when the wafer rotates, the asymmetry based on the susceptor and the chamber is filtered out, thereby significantly reducing the hardware susceptor and chamber characteristics exhibited on the wafer during processing. That is, the non-uniformity introduced by the susceptor characteristics can be symmetrically distributed across the entire wafer during wafer processing by using the lift pad for wafer rotation and not rotating the susceptor.

[0073] The lift pad and susceptor configuration 400 includes a plurality of heating elements 470 for directly heating the susceptor 140' (e.g., by conduction) and indirectly heating the lift pad 430 when the lift pad 430 is disposed on the susceptor 140'. Additionally, in some processing modules, the lift pad and susceptor configuration 400 optionally includes a plurality of cooling elements 480 for cooling the susceptor 140'.

[0074] The lift pad and pedestal configuration 400 includes a central column, which is shown to include a coaxial lift pin assembly 415 having a plurality of lift pins, the lift pins being controlled by a lift pin control device 122, as described previously. For example, the lift pins are used to raise the wafer from the lift pad 430 and the pedestal 140' so that the end effector can pick up the wafer and lower the wafer after the end effector places the wafer during the wafer transfer sequence.

[0075] The lift pad and pedestal configuration 400 includes a bellows 420. The bellows 420 is separately coupled to the lift pin assembly 415, the pedestal, or the lift pad, and is configured for the movement of the lift pins, the pedestal, or the lift pad. Additionally, the lift pad and pedestal configuration 400 includes a rotary motor in a belt-pulley device 427. Further, an iron seal 425 facilitates the rotation of the lift pad 430 in a vacuum environment.

[0076] In one embodiment, the wafer-sized lift pad 430 is electrostatic chuck (ESC) compatible. The ESC 570 is configured to include electrodes biased to a high voltage so as to cause an electrostatic holding force to hold the wafer in place when the ESC 570 is active. Additionally, in one embodiment, the lift pad and pedestal configuration 400 includes a flexible shaft portion 435, which promotes a uniform gap between the lift pad 430 and the pedestal 140', especially when the lift pad 430 moves to rest on the pedestal 140'.

[0077] As Figure 4 shown, in one embodiment, a ball screw 437 (e.g., on the left hand side) is configured to drive the lift pins against the pedestal 140' during a sequence of processing. For example, the ball screw 437 can be engaged during the wafer transfer sequence so as to extend the lift pins for wafer transfer when the pedestal 140' moves to or moves at a position near the bottom most position. A ball screw 443 (e.g., on the right hand side) is used to move the pedestal in the Z direction along the central axis. For example, the ball screw 443 is configured to drive the pedestal 140' in the Z-axis direction along the central axis using a Z motor 445. Additionally, a short stroke coupling mechanism 440 is shown.

[0078] Figure 5A is a cross-sectional view of a Figure 4 substrate processing system according to an embodiment of the present disclosure. In particular, Figure 5A the lift pad and pedestal configuration 400 is shown, where the lift pad 430 is sized to generally match a wafer (not shown).

[0079] For illustrative purposes only, the pedestal 140' is formed in three sections to accommodate a plurality of heating elements 470 and a plurality of cooling elements 480 during manufacturing. It should be understood that the pedestal 140' is considered as one element and can be formed using any suitable manufacturing process.

[0080] like Figure 5A As shown, the pedestal 140' and lift pad 430 are at a level that enables lift pins 557 to be extended for wafer transfer. Each lift pin 557 is coupled to a corresponding lift pin support 555 for movement, wherein the movement of the lift pin support 555 is controlled by the lift pin control device 122. In one embodiment, the pedestal 140' is in its lowest position along the Z direction to travel along the central axis 471.

[0081] As previously described, the base control 450 controls the movement of the central axis 510'. Because the base 140' is coupled to the central axis 510', the movement in the central axis 510' is transferred to the base 140'. In addition, as previously described, the lift pad control 455 controls the movement of the pad shaft 560. Because the lift pad 430 is coupled to the pad shaft 560, the movement in the pad shaft 560 is transferred to the lift pad 430.

[0082] Figure 5B According to an embodiment of the present disclosure Figure 4 A cross-sectional view of a substrate processing system including the Figure 4 and 5A -5B shows an assembly 500B of the lift pad and pedestal configuration 400. The lift pad 430 is sized to approximately match a wafer (not shown). In yet another embodiment, the diameter of the lift pad 430 is sized to fit a carrier ring (not shown). The lift pad and pedestal configuration 500A provides improved film uniformity during deposition processes (e.g., PECVD, ALD, etc.) in single-station and multi-station systems by rotating the wafer using the lift pad without rotating the pedestal in order to filter out azimuthal non-uniformities due to chamber asymmetry and pedestal asymmetry. In particular, the rotating lift pad 430 is much thinner than the entire pedestal 140', and thus the rotational features of the lift pad 430 are much smaller than the rotational features of the pedestal 140' (asymmetric hardware contribution to non-uniformity), which includes the heater element 470 and the cooling element 480. That is, the non-uniformities introduced by the pedestal features can be symmetrically distributed across the wafer during wafer processing by rotating the wafer using the lift pad without rotating the pedestal.

[0083] In assembly 500B, base 140' includes a base top surface 533 that extends from a central axis 471 of base 140'. The top surface 533 may include one or more recesses to provide an interface between base 140' and lift pad 430, such as a central recess around axis 471 and a recess forming an outer edge 509 that are configured to facilitate coupling between pad shaft 510' and lift pad 430. Although base 140' may be described as generally having a circular shape when viewed from above and extending to the base diameter, the footprint of base 140' may vary from a true circle to accommodate different features, such as accommodating carrier ring support and end effector access, etc.

[0084] As shown, base 140' is connected to actuator 515, which is configured to control the movement of base 140'. In particular, base control device 450 is coupled to actuator 515 to control the movement of base 140'. That is, central shaft 510' is coupled to actuator 515 and base 140' such that central shaft 510' extends between actuator 515 and base 140'. Central shaft 510' is configured to move base 140' along central axis 471. Thus, the movement of actuator 515 is translated into the movement of central shaft 510', and the movement of central shaft 510' is translated into the movement of base 140'.

[0085] Additionally, base 140' is shown as having three sections 140a', 140b' and 140c', which are for illustrative purposes only. For example, base 140' may be formed as three sections to accommodate the formation of multiple heating elements 470 and / or multiple cooling elements 480 during manufacturing. As previously mentioned, it should be understood that base 140' is considered an element and may be formed using any suitable manufacturing process.

[0086] In assembly 500B, lift pad 430 includes a pad top surface 575 that extends from central axis 471. In one embodiment, pad top surface 575 extends to a pad diameter 577. Lift pad 430 includes a pad bottom surface 543 that is configured to rest on base top surface 533. Additionally, pad top surface 575 is configured to support a wafer when placed thereon.

[0087] Additionally, as previously mentioned, lift pad 430 is electrostatic chuck (ESC) compatible. For example, ESC assembly 570 is disposed below pad top surface 575. The electrostatic chuck assembly 570 prevents the wafer from moving due to chamber flow perturbations and maximizes the contact of the wafer with the chuck (i.e., lift pad top surface 575). The benefits of a substantially wafer-sized lift pad 430 combined with a full-wafer ESC result in minimal wafer backside deposition. Additionally, a full-wafer ESC does not require declamping for twist and / or rotation.

[0088] As shown, the lift pad 430 is connected to the actuator 515, and the actuator 515 is configured to control the movement of the lift pad 430. The lift pad control device 455 is coupled to the actuator 515 to control the movement of the lift pad 430. That is, the pad shaft 560 is coupled to the actuator 515 and the base 140' such that the pad shaft 560 extends between the actuator 515 and the base 140'. The pad shaft 560 is disposed within the central shaft 510', and the central shaft 510' is connected to the base 140'. In particular, the pad shaft 560 is configured to move the base 140' along the central axis 471. Thus, the movement of the actuator 515 is converted into the movement of the pad shaft 560, and the movement of the pad shaft 560 is converted into the movement of the lift pad 430. In one embodiment, the actuator 515 controls the movement of the lift pad 430 and the base 140'.

[0089] Specifically, the pad shaft 560 is configured to separate the lift pad 430 from the base 140', as will be described more fully below in conjunction with Figures 9A - 9C For example, the lift pad 430 is configured to move upward relative to the base top surface 533 along the central axis 471 when the base 140' is in the upward position, such that the lift pad 430 is separated from the base top surface 533 to process rotational displacement to rotate the lift pad 430. In one embodiment, when the base 140' reaches the topmost upward position, the lift pad 430 moves upward relative to the base top surface 533. In addition, when the lift pad 430 is separated from the base top surface 533, the lift pad 430 is configured to rotate relative to the base top surface 533 of the base 140' between at least a first angular orientation and a second angular orientation (e.g., between 0 degrees and 180 degrees). The pad shaft 560 is also configured to lower the lift pad 430 to rest on the base 140'. In particular, the flexible coupler 435 ( Figure 5C shown in) is positioned within the pad shaft 560 and is configured to evenly position the lift pad 430 above the base 140'.

[0090] In one embodiment, to prepare for the rotation of the lift pad 430, the lift pad 430 moves upward relative to the base 140'. That is, the lift pad 430 is configured to move upward relative to the base top surface 533 along the central axis 471 when the base 140' is in the upward position (e.g., the topmost upward position) during wafer processing, such that the lift pad 430 (see Figure 9B)The rotational displacement 940 is separated from the top surface 533 of the susceptor, and the wafer disposed on the lift pad 430 is also separated from the susceptor 140'. In particular, when the lift pad 430 is separated from the susceptor 140', the lift pad 430 is configured to rotate between at least a first angular orientation and a second angular orientation relative to the top surface 533 of the susceptor with respect to the top surface 533 of the susceptor. This rotation reduces the influence of the hardware features of the susceptor during processing and also reduces the influence of the chamber hardware features during processing. Additionally, a focus ring (not shown) does not rotate with the wafer, thereby reducing its hardware features on the wafer during processing.

[0091] The assembly 500 includes a lift pin assembly that includes a plurality of lift pins 557. For illustrative purposes, according to one embodiment of the present disclosure, the susceptor 140' and the lift pad 430 are in a horizontal position that allows the lift pins 557 to extend for wafer transfer. In particular, the lift pins 557 extend from the lift pad 430 through a plurality of susceptor shafts 518 disposed in the susceptor 140' and through a plurality of lift pad shafts 519 in the lift pad 430 such that an end effector arm (not shown) carrying a wafer (with or without a carrier ring) can be maneuvered into a position for transferring the wafer to or receiving the wafer from the lift pins 557. The corresponding susceptor shafts 518 and pad shafts 519 are aligned and configured to receive the corresponding lift pins 557. As shown, one or more lift pin shafts and the corresponding lift pins can be configured within the lift pin assembly to lift and place or remove the wafer during wafer transfer. As shown, each lift pin 557 is coupled to a corresponding lift pin support 555 for movement. The lift pin support 555 is coupled to a lift pin actuator 550. In addition, a lift pin control device 122 controls the movement of the lift pin actuator 550 to effect movement in the lift pins 557.

[0092] The lift pin support 555 can be of any shape (e.g., an annular washer, an arm extending from an annular base, etc.). In particular, during operation of the lift pin assembly, the lift pins 557 are attached to the lift pin support 555 and positioned to move within the lift pin shafts to raise the wafer above the top surface 575 of the lift pad and / or lower the wafer to rest on the top surface 575 of the pad during wafer transfer and processing.

[0093] Figure 5C is a diagram of the interface between the lift pad 140 and the susceptor 430 according to one embodiment of the present disclosure, which includes a minimum contact area (MCA) for pad gap setting to control and / or mechanically set the gap, especially during a processing sequence. This results in uniform temperature and impedance control of the pad. Figure 5C The interface shown in Figure 5A and 5B is an example of the interface between the lift pad and the susceptor shown in

[0094] For deposition processing, it is advantageous that the gap between the lift pad 430 and the pedestal 140' is uniform and small. For example, PECVD and ALD processing may exhibit non-uniformity characteristics due to temperature and plasma impedance. Both of these factors are sensitive to the gap between the wafer and the pedestal. Minimizing the size of the gap and controlling the uniformity of the gap across the lift pad and pedestal configuration reduces the characteristics caused by temperature and plasma impedance.

[0095] In particular, the small gap enables low-impedance coupling of radio frequency (RF) energy between the lift pad 430 and the pedestal 140'. Additionally, the small gap provides a lower thermal resistance, allowing heating and / or cooling to be easily conducted from the pedestal 140' to the lift pad 430. Furthermore, the uniform gap between the lift pad 430 and the pedestal 140' ensures uniform heat transfer and uniform RF coupling.

[0096] As shown, the pedestal top surface 533 includes a plurality of pad supports 595 (e.g., MCA for pad gap setting) defined thereon, where the pad supports are configured to support the lift pad 430 at a pad support level above the pedestal top surface 533. Sections 140a' and 140b' of the pedestal 140' are in Figure 5C shown. As previously described, the pad supports 595 provide a uniform and small gap between the lift pad 430 and the pedestal 140', thus ensuring uniform heat transfer and uniform RF coupling between the lift pad 430 and the pedestal 140'. More specifically, the bottom surface 543 of the lift pad 430 is configured to rest on the plurality of pad supports 595 of the pedestal 430. For example, the pedestal 140' and the lift pad 430 can be configured in a processing position (e.g., when performing plasma processing, treatment, and / or film deposition), or in a pre-coating position such that the lift pad 430 rests on the plurality of pad supports 595. Additionally, the lift pad 430 is configured to move with the pedestal 140' when resting on the pad supports 595. The pad supports can be conductive for DC, low-frequency, and RF transmission.

[0097] Figure 6 A substrate processing system including a lift pad and pedestal configuration 600 according to an embodiment of the present disclosure is shown, where the lift pad 630 is smaller than the wafer (not shown). The lift pad and pedestal configuration 600 can be implemented within Figures 1 - 3 systems including multi-station and single-station processing tools.

[0098] The lift pad and base configuration 600 includes a lift pad 630 controlled by a lift pad control device 455, and a base 140 controlled by a base control device 450. As previously described, the base control device 450 controls the movement of the base 140 along the central axis 471', while the lift pad control device 455 controls the movement of the lift pad 630 about the central axis 471' (e.g., up, down, and rotation). The lift pad and base configuration 600 provides rotation of a wafer (not shown) through the lift pad 630, where the hardware rotation features are greatly reduced when compared to a processing tool with or without base rotation.

[0099] The lift pad and base configuration 600 includes a small lift pad 630 that is smaller than the wafer coverage area. When ESC is not selected, the lift pad and base configuration 600 can be applied to some deposition processes. In this case, the small lift pad 630 is preferred because it enables the minimum contact area (MCA) of the base that supports the wafer during processing to not rotate with the wafer. In this case, the gap of the wafer nominally does not rotate with the wafer, which reduces the exposure to hardware asymmetry. Additionally, the smaller lift pad 630 also provides the further benefit that the mass that needs to be rotated is reduced, thereby providing less mechanical stress to the system.

[0100] The lift pad and base configuration 600 includes a plurality of heating elements 470' and thermocouples 607, and the thermocouples 607 are included in the pad shaft 560' of the lift pad 630 to match the temperature at the surface of the lift pad 630 to the surface of the base 140. Cooling elements in the base 140 can be included in some processing modules.

[0101] In one embodiment, although not shown, the lift pad and base configuration 600 optionally includes a lift pin assembly having a plurality of lift pins, and the lift pins are controlled by a lift pin control device 122 for wafer transfer, as previously described. A flange 605 is included in the coaxial lift pin assembly (not shown). In another embodiment, the small lift pad 630 can be used to provide the lift pin function, thereby eliminating the need for a lift pin assembly and thus providing cost and packaging advantages.

[0102] The lift pad and base configuration 630 includes bellows 420', and each bellows 420' is individually coupled to an optional lift pin assembly, the base 140, or the lift pad 630 and is configured for its movement. Additionally, the lift pad and base configuration 600 also includes a rotary motor in a pulley device (not shown), which is similar to Figure 4 the pulley device shown in. An iron seal 425' facilitates the rotation of the lift pad 630 in a vacuum environment.

[0103] In addition, the Z motor 445' is configured to drive the base 630 in the Z direction along the central axis 471'. Further, the coupling mechanism drives the slider 603 to be attached to the base and the central axis 510", and to be attached to the ball screw to which the Z motor 445' is attached, all of which are used to facilitate the movement of the base 140" along the central axis 471'.

[0104] Figure 7A is of a substrate processing system according to an embodiment of the present disclosure. In particular, Figure 6 is a perspective view of. Figure 7A includes a lift pad and a base configuration 600, wherein the lift pad 630 is smaller than a wafer (not shown). As Figure 7A shown, the base 140" and the lift pad 630 are shown in a position and / or level where wafer processing can be performed.

[0105] As previously described, the base control device 450 controls the movement of the central axis 510". Since the base 140" is coupled to the central axis 510", the movement of the central axis 510" is transferred to the base 140". Further, as previously described, the lift pad control device 455 controls the movement of the pad shaft 560'. Since the lift pad 630 is coupled to the pad shaft 560', the movement in the pad shaft 560' is transferred to the lift pad 630.

[0106] The base 140" of the lift pad and base configuration 600 includes a base top surface 720 extending from the central axis 471" of the base 140". A plurality of wafer supports 760 are provided on the top surface 720. In addition, a raised edge 710 is provided on the outer edge of the base top surface 720, wherein the raised edge 710 is configured to block the lateral movement of the wafer placed on the base 140".

[0107] Figure 7B is of a substrate processing system according to an embodiment of the present disclosure. Figure 6 is a cross-sectional view of, which shows including those previously in Figure 6 and 7AThe component 700B of the lift pad and pedestal configuration 600 described in [reference]. According to an embodiment of the present disclosure, the lift pad 630 is sized smaller than the wafer. For illustrative purposes only, the pedestal 140” and the lift pad 630 are shown in a position and / or level capable of wafer processing. In single - station and multi - station systems, during deposition processes (e.g., PECVD, ALD, etc.), the lift pad and pedestal configuration component 700B provides improved film uniformity by rotating the wafer using the lift pad without rotating the pedestal in order to filter out azimuthal non - uniformity caused by chamber asymmetry and pedestal asymmetry. In particular, the rotating lift pad 630 is much smaller and thinner than the entire pedestal 140”, so the rotational characteristics of the lift pad 630 are much smaller than the rotational characteristics of the pedestal 620 containing the heater element 480' (asymmetric hardware factors affecting non - uniformity). That is, the non - uniformity introduced by the pedestal characteristics can be symmetrically distributed across the entire wafer during wafer processing by rotating the wafer using the lift pad and not rotating the pedestal.

[0108] In the component 700B, the pedestal 140” includes a pedestal top surface 720 extending from a central axis 471' of the pedestal 140”. The pedestal top surface 720 is configured to support the wafer when the wafer is placed thereon. The top surface 720 may include one or more recesses to provide an interface between the pedestal 140” and the lift pad 630, such as a recess 705 configured to facilitate the coupling between the pad shaft 510' and the lift pad 430, and a recess forming an outer edge 710. Although the pedestal 140” can be described as generally having a circular shape when viewed from above and extending to the pedestal diameter, the occupied area of the pedestal 140” can vary from circular to accommodate different features, such as carrier ring support and end - effector access, etc.

[0109] As shown, the pedestal 140” is connected to an actuator 515', and the actuator 515' is configured to control the movement of the pedestal 140”. In particular, the pedestal control device 450 is coupled to the actuator 515' to control the movement of the pedestal 140”. In particular, a central shaft 510” is coupled to the actuator 515' and the pedestal 140”, such that the central shaft 510” extends between the actuator 515' and the pedestal 140”. The central shaft 510” is configured to move the pedestal 140” along the central axis 471'. Thus, the movement of the actuator 515' is translated into the movement of the central shaft 510”, and the movement of the central shaft 510” is in turn translated into the movement of the pedestal 140”.

[0110] In one embodiment, the pedestal top surface 720 includes a plurality of wafer supports (not shown) defined thereon, where the wafer supports are configured to support the wafer 590 at a wafer support level above the pedestal top surface 720. The wafer supports provide a uniform and small gap between the pedestal 140” and any wafer 590 disposed thereon.

[0111] The "base 140" includes a recess 705 centered on the top surface 720 of the base and extending from the central axis 471'. The recess 705 has a recess height, and the recess 705 has a recess bottom surface 706. That is, the recess 705 is located above the central portion of the top surface 720 of the base. In one embodiment, the recess bottom recess surface 706 includes a plurality of pad supports defined thereon, wherein the pad supports (e.g., MCA) are configured to support the lift pad 630 at a pad support level above the bottom recess surface 706. In another embodiment, the MCA is disposed on the bottom surface of the lift pad 630, as further described in reference Figure 7F as described.

[0112] Additionally, the base 140" is shown as having two sections 140a" and 140b", which are for illustrative purposes only. For example, the base 140" may be formed in two sections to accommodate the formation of multiple heating elements 470' and / or multiple cooling elements (not shown) during manufacturing. As previously disclosed, it should be understood that the base 140" is considered one element and may be formed using any suitable manufacturing process.

[0113] In assembly 700B, the lift pad 630 includes a pad top surface 775 that extends from the central axis 471' to the pad diameter 777. The lift pad 630 is configured to rest on the recess bottom surface 706 when the lift pad 630 is located within the recess 705, wherein the recess 705 is configured to receive the lift pad 630. Specifically, when the wafer 590 is located on the wafer support of the base 140", e.g., in a processing position (e.g., when plasma processing, machining, and / or film deposition is being performed), the lift pad top surface 775 is below the wafer 590. That is, when the bottom surface 632 of the lift pad 630 rests on a plurality of pad supports (e.g., MCA 745), the lift pad top surface 775 is below the wafer support level. Additionally, the lift pad 630 is configured to move with the base 620 when resting on the pad supports.

[0114] As shown, lift pad 630 is connected to actuator 515', which is configured to control the movement of lift pad 630. For example, lift pad control device 455 is coupled to actuator 515' to control the movement of lift pad 630. Specifically, pad shaft 560' is coupled to actuator 515' and base 140", such that pad shaft 560' extends between actuator 515' and base 140". Pad shaft 560' is disposed within central axis 510" connected to base 140". Specifically, pad shaft 560' is configured to move lift pad 630 along central axis 471'. Thus, the movement of actuator 515' is translated into the movement of pad shaft 560", and the movement of pad shaft 560" is translated into the movement of lift pad 630. In one embodiment, actuator 515' controls the movement of both lift pad 630 and base 140".

[0115] Specifically, pad shaft 560' is configured to separate lift pad 630 from base 140" for lift pad rotation, as will be described more fully below with respect to Figures 10A - 10D For example, lift pad 630 is configured to move upward relative to base top surface 720 along central axis 471' when base 140" is in the upward position, such that lift pad 630 is separated from base top surface 720 to process rotational displacement, in order to rotate lift pad 630. Pad shaft 560' is also configured to lower lift pad 430 to rest on base 140'. In one embodiment, to prepare for lift pad rotation, lift pad 630 moves upward relative to base 140". That is, lift pad 630 is configured to move upward relative to base top surface 720 along central axis 471" when base 140" is in the upward position, such that lift pad 630 is separated from base top surface 720 (see Figure 10B and 10C ) to process rotational displacement 1040, and such that the wafer disposed on lift pad 630 is separated from base 140". In one embodiment, base 140" is in the topmost upward position during lift pad 630 rotation. Specifically, when lift pad 630 is separated from base 140", lift pad 630 is configured to rotate between at least a first angular orientation and a second angular orientation (e.g., between 0 degrees and 180 degrees) relative to base top surface 720. This rotation reduces the influence of the hardware features of the base during processing, and also reduces the influence of the chamber hardware features during processing.

[0116] In other embodiments, lift pad 630 provides a lift pin function to raise and lower the wafer during wafer transfer and processing. Specifically, lift pad 630 is configured to move upward relative to central base top surface 720 when the base is in the bottommost downward position, such that lift pad 630 is separated from central base top surface 621 by a large enough displacement for the end effector arm to enter.

[0117] As Figure 7B shown, the pedestal 140” of the lift pad and pedestal configuration 600 includes a raised edge 710 disposed on the outer edge of the pedestal top surface 720, where the raised edge 710 is configured to block lateral movement of a wafer placed on the pedestal 140”. That is, the edge 710 is a step above the pedestal top surface 720 and is high enough to block movement of the wafer. For example, when the wafer is resting on the pedestal top surface 720, the raised edge 710 forms a groove that blocks lateral movement of the wafer.

[0118] Figure 7C is a cross-sectional view of a Figure 6 substrate processing system according to an embodiment of the present disclosure, which shows a component 700C of a lift pad and pedestal configuration 600' that includes a configuration based on that previously presented in Figure 6 and 7A and 7B, where the lift pad 630 is smaller than the wafer. The lift pad and pedestal configuration 600' includes a pedestal 140”' and a lift pad 630. More specifically, Figure 7C the lift pad and pedestal configuration 600' is similar to Figure 7B the lift pad and pedestal configuration 600 and provides the same benefits and advantages as described previously with respect to Figure 7B (e.g., improved film uniformity during deposition). That is, the non-uniformity introduced by the pedestal features can be symmetrically distributed across the wafer during wafer processing by rotating the wafer using the lift pad and not rotating the pedestal. However, the lift pad and pedestal configuration 600' also includes a lift pin assembly that is configured to transport a corresponding wafer (e.g., wafer 590).

[0119] The lift pin assembly of the component 700C includes a plurality of lift pins 557'. For illustrative purposes, according to an embodiment of the present disclosure, the base 140''' and the lift pad 630 are in a horizontal position that allows the lift pins 557' to extend for wafer transfer. In particular, the lift pins 557' extend from a plurality of base shafts 518' that are displaced from the central axis 471' and are disposed in the base 140'' such that an end effector arm (not shown) carrying a wafer (with or without a carrier ring) can be maneuvered into a position for transferring the wafer to or receiving the wafer from the lift pins 557'. The corresponding base shafts 518' are configured to receive the corresponding lift pins 557'. As shown, one or more base shafts 518' and the corresponding lift pins 557' may be configured within the lift pin assembly to lift and place or remove a wafer during wafer transfer. As shown, each lift pin 557' is coupled to a corresponding lift pin support 555' and is positioned to move within the base shaft 518' to raise the wafer above the base top surface 720 and / or lower the wafer onto the base top surface 720 during wafer transfer and processing. The lift pin support 555' is configured to move parallel to the central axis 471' relative to the base top surface 720. In addition, the lift pin support 555' is coupled to a lift pin actuator 550'. Additionally, the previously introduced lift pin control device 122 controls the movement of the lift pin actuator 550' to effect movement in the lift pins 557'. The lift pin support 555' can be of any shape (e.g., an annular washer, an arm extending from an annular base, etc.).

[0120] Figure 7D is according to an embodiment of the present disclosure Figure 6 cross-sectional view of a lift pad to base interface in a substrate processing system of, which includes Figures 7A - 7C a lift pad and base configuration 600 or 600' of, wherein the lift pad is smaller than the wafer.

[0121] The high-temperature bearing 755 is positioned within the pad shaft 560' and is configured to position the lift pad 630 uniformly within the recess 705 of the base 140' or 140''. For handling high temperatures, the wear surface is preferably made of a hard, chemically compatible material, such as sapphire. The bearing centering is insensitive to the relative thermal expansion of the bearing components, the shaft, and the base material. In one embodiment, the tapered clamping surface of the sapphire bearing ring can be spring-loaded using a load-distributing washer, a spring washer, and a retaining ring of a material suitable for high-temperature and corrosion operation. The bearing is clamped at its central position with minimum energy and remains centered with temperature variations. The sapphire contact ring prevents indentation of the softer base material.

[0122] In particular, the interface between the lift pad 630 and the base 140" / 140"' is shown, and includes a pad gap setting MCA to control and / or mechanically set the gap, particularly during a processing sequence. For example, Figure 7D Sapphire balls 740 and 745 (e.g., MCA) are shown riveted into lift pad 630. Specifically, balls 740 and 745 protrude slightly by a few millimeters above the corresponding surface on the ordering operating system at processing temperatures. The sapphire balls are used to contact the base 140" / 140"' with a minimum contact area to minimize heat conduction through contact with poor thermal conductive materials. In addition, the sapphire contact ring prevents indentation of the softer base material.

[0123] For example, Figure 7E According to an embodiment of the present disclosure, the MCA 740 is included Figure 7D 7. A perspective view of a top surface 631 of the lift pad 630 shown in FIG. 7. In one embodiment, the wafer reference MCA 740 is located 0.002 inches above the top surface 631 such that when the lift pad 630 rests on the recess bottom surface 706, the pad top surface 631 is below the wafer support level. In one embodiment, when the lift pad 630 rests on the pedestal 140" / 140"', the wafer reference MCA 740 does not contact the wafer 590 because a separate pedestal wafer support (e.g., MCA) located on the top surface of the pedestal 720 is elevated by about 0.002 inches or more. The wafer support disposed on the pedestal top surface 720 of the pedestal 140" / 140"' is configured to support the wafer 590 at a wafer support level above the top surface 720 when the wafer 590 is placed thereon.

[0124] also, Figure 7F is a perspective view of the bottom surface 632 of the lift pad 630 shown in FIG. 7 including the MCA 745 according to an embodiment of the present disclosure. In one embodiment, the wafer reference MCA 745 is 0.004 inches above the bottom surface 632. This ensures a uniform, repeatable gap between the lift pad 630 and the pedestal 140" / 140"' to provide a uniform, repeatable thermal resistance to the pedestal 140" / 140"'. In one embodiment, the MCA 745 works with a plurality of pad supports (not shown) disposed on the recess bottom surface 706, which are configured to support the lift pad 630 at a pad support level above the recess bottom surface 706.

[0125] Figure 8FIG. 800 is a flow chart of a method for operating a processing chamber configured to deposit a film on a wafer, according to an embodiment of the present disclosure, where the method provides for rotating the wafer within the processing chamber during processing without rotating the susceptor, which advantageously filters out both chamber asymmetry and susceptor asymmetry. Flow chart 800 is implemented within the system and lift pad and susceptor configurations of Figure 1 -7. The operations in flow chart 800 are applicable to wafer-sized lift pad and susceptor configurations, as shown in Figure 4 and 5A5C of the embodiments, and can be applicable to lift pad and susceptor configurations including lift pads smaller than the wafer, such as those shown in Figure 6 and 7A -7F in other embodiments.

[0126] In operation 805, the method includes moving the lift pad and susceptor configuration to a bottom position to receive the wafer. In one embodiment, the susceptor is in its lowest downward position. In a lift pad and susceptor configuration including a lift pin assembly, the lift pins can extend for wafer transfer. In a lift pad and susceptor configuration that does not include a lift pin assembly, the lift pad (e.g., smaller than the wafer) can be displaced from the top surface of the susceptor by a large enough displacement so that the end effector arm can enter for the purpose of wafer transfer. In operation 810, the wafer is placed on the assembly including the lift pad and susceptor configuration, where the lift pad is configured to rest on the susceptor. For example, this may involve placing the wafer on the extended lift pins, or placing the wafer on the extended lift pad. The lift pins or lift pad are lowered so that the wafer rests on a wafer support on the top surface of the susceptor, the top surface of the lift pad, or the ESC chuck surface.

[0127] Control the susceptor movement such that the susceptor moves up and down along the central axis of the susceptor. In one embodiment, a coupling mechanism transfers the movement of the susceptor to the lift pad in the lift pad and susceptor configuration. For example, at operation 820, after wafer transfer, the lift pad and susceptor configuration are moved to a processing position. At the processing position, the lift pad rests on the susceptor, as described above. Additionally, the lift pad is in a first orientation relative to the susceptor and / or the chamber. The first orientation can be arbitrary. For example, both the lift pad and the susceptor can be positioned at a 0-degree angular orientation within the chamber.

[0128] At operation 825, the method includes processing the wafer at a first orientation for a first number of processing cycles. For example, deposition of one or more films can implement an atomic layer deposition (ALD) process, which is also known as atomic layer chemical vapor deposition (ALCVD). ALD produces very thin, highly conformal, smooth films with excellent physical properties. ALD uses volatile gases, solids, or vapors that are sequentially introduced (or pulsed) onto a heated substrate. In one ALD cycle, four operations are performed and can be defined as an A-P-B-P sequence. In step A, a first precursor is introduced as a gas and absorbed (or adsorbed) into the substrate. In step P following step A, the gaseous precursor in the reaction chamber is purged. In step B, a second precursor is introduced as a gas, which reacts with the absorbed precursor to form a single layer of the desired material. In step P following step B, the second gaseous precursor in the reaction chamber is purged again. By adjusting this A-P-B-P sequence, the film produced by ALD is deposited as a single layer at a time by repeatedly switching the sequential flow of two or more reaction gases over the substrate. In this way, the thickness of the film can be adjusted according to the number of cycles of the A-P-B-P sequence performed. The first number of cycles can be defined as value X. To illustrate an embodiment of the lift pad and pedestal configuration that is capable of rotating the wafer within the processing chamber without rotating the pedestal during processing (which advantageously filters out both chamber asymmetry and pedestal asymmetry), the number of X cycles can be 50 cycles.

[0129] At operation 830, the method includes raising the pedestal to an upward position. In one embodiment, the pedestal is raised to its topmost upward position. By moving the pedestal to the upward position, the lift pad also raises relative to the pedestal (e.g., the top surface of the pedestal), such that the wafer disposed on the lift pad is separated from the pedestal 820. In one embodiment, when the pedestal approaches the top of its travel, the coupling mechanism raises the lift pad. That is, the contact between the lift pad 830 and the surface of the pedestal 820 is broken, which allows the lift pad to rotate freely. In particular, the lift pad is separated from the pedestal by a rotational displacement (e.g., approximately 1 mm). In this way, the wafer supported by or disposed on the lift pad is also separated from the pedestal.

[0130] At operation 840, the method includes rotating the lift pad 830 relative to the pedestal 820 (e.g., the top surface of the pedestal) when the lift pad 830 is separated from the pedestal 820. Specifically, the lift pad 830 rotates from a first orientation to a second orientation relative to the pedestal 820. For example, the second orientation and the first orientation can be separated by 180 degrees (e.g., the first orientation is at 0 degrees).

[0131] At operation 845, the method includes lowering the lift pad to rest on the pedestal. Moreover, at operation 850, the method includes moving the pedestal and corresponding lift pad back to the processing position. In one embodiment, the operations performed at 845 and 850 occur simultaneously by the action of a coupling mechanism such that by lowering the pedestal back to the processing position, the lift pad is also lowered until the lift pad rests on the pedestal.

[0132] At operation 855, the method includes processing the wafer for a second number of processing cycles (e.g., each cycle includes an A-P-B-P sequence), where the lift pad is in a second orientation relative to the pedestal. The second number of cycles can be defined as the value Y. To illustrate embodiments of the present disclosure that enable rotation of the wafer within the processing chamber without rotating the pedestal during processing (which advantageously filters out both chamber asymmetry and pedestal asymmetry), the number of Y cycles can be 50 cycles.

[0133] In this way, the thickness of the film can also be adjusted according to the number of cycles of the A-P-B-P sequence performed (e.g., X + Y). Since the wafer is also rotated relative to the pedestal for the second number of cycles, both chamber asymmetry and pedestal asymmetry are filtered out, which provides improved film uniformity during wafer processing.

[0134] In the example provided above, the first number of cycles is X and the second number of cycles is Y, where for a total of 100 cycles of performing the A-P-B-P sequence, both X and Y include 50 cycles. That is, the first number of processing cycles (X) can be half of the total number of cycles performed in the first orientation, and the second number of processing cycles (Y) can also be half of the total number of cycles performed in the second orientation. Thus, 50 cycles are performed at the first angular orientation (e.g., 0 degrees), and an additional 50 cycles are performed at the second angular orientation (e.g., 180 degrees).

[0135] Although embodiments of the present disclosure have been described with reference to a first orientation and a second orientation, other embodiments are well-suited for performing wafer processing using one or more orientations (e.g., 1, 2, 3, etc.). In one embodiment, the orientations can be separated by equal angles, or in another embodiment, the orientations can be separated by unequal angles. Additionally, at each orientation, one or more wafer processing (e.g., ALD, PECVD, etc.) cycles are performed. In one embodiment, the number of cycles performed at each orientation can be equally distributed, or in another embodiment, they can be unequally distributed. That is, other embodiments are well-suited for two or more sets of cycles at two or more relative angular orientations (e.g., between the lift pad and the pedestal), where each set can include an equal number of processing cycles (e.g., each cycle includes an A-P-B-P sequence), or a different number of processing cycles.

[0136] At 860, the method includes configuring the lift pad and the susceptor to move to a bottom position to remove the wafer from the assembly including the lift pad and the susceptor configuration. In one embodiment, the susceptor is in its lowest downward position. As previously described, in the lift pad and susceptor configuration including the lift pin assembly, the lift pins can extend for wafer transfer. In the lift pad and susceptor configuration that does not include the lift pin assembly, the lift pad (e.g., smaller than the wafer) can be displaced from the top surface of the susceptor by a large enough displacement so that the end effector arm can enter for wafer transfer. In this way, the wafer can be removed from the extended lift pins or the extended lift pad using the end effector arm.

[0137] Figure 9A and 9B is a diagram showing the sequence of movement of the lift pad and susceptor configuration according to an embodiment of the present disclosure, where the lift pad is sized to substantially match the wafer and includes rotating the wafer in the processing chamber without rotating the susceptor during processing, which advantageously filters out the asymmetries of the chamber and the susceptor.

[0138] In particular, Figure 9A shows the lift pad and susceptor configuration 400 of the wafer size introduced first in Figure 4 and 5A -5B. The lift pad and susceptor configuration 400 includes a susceptor 140', a lift pad 430, and a lift pin assembly including lift pins 557. In the transfer position, the lift pad and susceptor configuration 400 is configured such that the susceptor 140' is in the bottom position, where the lift pad rests on the susceptor. As shown by the dashed circle marked "A", the lift pins 557 extend from the top surface of the lift pad 430 for wafer transfer. Figure 9A Also shown is the lift pad and susceptor configuration 400 in the pre-coating position, where a pre-coating layer and a bottom coating of the film are deposited in the processing chamber before processing the wafer. As shown by the dashed circle marked "B", the lift pad 430 rests on the susceptor 140'. Additionally, when the pre-coating deposition occurs and there is no wafer on the lift pad and susceptor configuration 400, the lift pins 557 are positioned such that the top of the lift pins 557 exactly fills the holes corresponding to the pad shafts in the lift pad 430 that are in place during chamber pre-coating. Figure 9AAlso shown is a lift pad and pedestal configuration 400 in a processing position, where one or more films can be deposited during wafer processing (e.g., PECVD and ALD processing) in single - station and multi - station systems. For example, wafer processing can implement an atomic layer deposition (ALD) process, which is also known as atomic layer chemical vapor deposition (ALCVD). ALD produces very thin, highly conformal, smooth films with excellent physical properties. As previously mentioned, four operations (e.g., an A - P - B - P sequence) are performed in one ALD cycle. As shown by the dashed circle labeled "C", the lift pad 430 rests on the pedestal 140', and the lift pin 557' has been retracted to a position within the body of the pedestal 140'. Figure 9A Also shown is the lift pad and pedestal configuration 400 in a rotational position, where the pedestal is in an upward position (e.g., the top - most upward position). As shown by the dashed circle labeled "D", the lift pad 430 is separated from the pedestal 140' for rotational displacement such that the lift pad can be rotated relative to the pedestal 140' to a second angular orientation.

[0139] Figure 9B According to one embodiment of the present disclosure, there is provided Figure 9A more details of, and shows first in Figure 4 and 5A the sequence of movement of the lift pad and pedestal configuration 400 introduced in - 5B, where the lift pad is sized to generally match the wafer and includes rotating the wafer within the processing chamber during processing without rotating the pedestal, which advantageously filters out both chamber asymmetry and pedestal asymmetry.

[0140] In the transfer position, the lift pad and pedestal configuration 400 is configured such that the pedestal 140' is in the bottom position, where the lift pad 430 rests on the pedestal 140'. In particular, the lift pad and pedestal configuration 400 is in a transfer position ready to receive and / or remove a wafer such that the bottom of the pedestal 140' is at the level within the respective chamber indicated by line 901. In particular, in one embodiment, the pedestal 140' is at its lowest level and is lower than a pre - coating position where the bottom of the pedestal 140' is at the level indicated by line 902, and lower than the level associated with the processing position indicated by line 903, and lower than the level associated with the rotational position indicated by line 904. As shown, the lift pad 430 rests on the pedestal 140', as previously described. Additionally, the lift pin 557 extends beyond the top surface of the lift pad 430 and is in a position to receive a wafer delivered by an arm of an end - effector, for example.

[0141] Figure 9BShows the lift pad and pedestal configuration 400 at the pre - coating level, where the bottom of the pedestal 140' is at the level in the corresponding chamber indicated by line 902. It is important to note that the pre - coating position can be defined at any position in the chamber and is not limited to the level indicated by line 902. For example, the pre - coating position can be the same as the processing position, where the lift pad and pedestal configuration are positioned for wafer processing (e.g., PECVD, ALD, etc.). As shown, the lift pad 430 rests on the pedestal 140', as previously described. Additionally, when pre - coating deposition occurs and there is no wafer on the lift pad and pedestal configuration, the lift pins 557 are positioned such that the top of the lift pins exactly fills the holes in the lift pad 430 that are in place during chamber pre - coating.

[0142] Specifically, prior to processing the wafer, a pre - coating layer and a bottom - coating layer of a film are deposited in the processing chamber. When the carrier ring that contacts the wafer is included in the lift pad and pedestal configuration, the pre - coating and / or bottom - coating film can also be applied to the carrier ring. It is believed that applying the pre - coating to the chamber as well as the lift pad and pedestal configuration (e.g., contact support structures, such as MCA) and optionally the carrier ring (where the pre - coating layer film is similar to the film that will be formed on the wafer during processing) improves film formation on the wafer. Thus, a pre - coating film is formed before introducing the wafer onto the lift pad and pedestal configuration. In addition, the pre - coating layer of the wafer processing environment and any other bottom - coating are combined to improve the uniformity of the wafer film. For example, a typical bottom - coating thickness can be about 3 microns, and the pre - coating thickness is about 0.5 microns.

[0143] Figure 9B Also shows the lift pad and pedestal configuration 400 in the processing position, where one or more films can be deposited during wafer processing (e.g., PECVD and ALD processing) in single - station and multi - station systems. Specifically, the pedestal 140' is at the level in the corresponding chamber indicated by line 903. As shown, the pedestal 140' is close to its top - most position or level in the chamber. It is important to note that the processing position can be defined at any position and / or level in the chamber, depending on the chamber and / or processing being implemented, and is not limited to the level indicated by line 903. As shown, the lift pad 430 rests on the pedestal 140', as previously described. Additionally, the lift pins 557 are positioned such that the top of the lift pins is within the body of the pedestal 140', such that the top can also be positioned at any position within the pedestal 140' or the lift pad 430. Furthermore, the lift pad 430 is in a first angular orientation relative to the pedestal 140'.

[0144] Figure 9BAlso shown is the lift pad and base configuration 400 in a rotated position, where the base is in an upward position. In one embodiment, the bottom of the base 140' is at the topmost level in the respective chamber as indicated by line 904. The lift pad 430 is separated from the base 140' by a rotational displacement 940 (e.g., about 1 mm). In one embodiment, when the base 140' approaches the top of its stroke, the coupling mechanism raises the lift pad 430 such that the lift pad is separated from the top surface of the base by the rotational displacement 940. Specifically, when the base 140' moves a distance "d" to the top of its stroke, the lift pad 430 moves a greater distance, which can be a multiple of "d". For example, when the base 140' reaches the top of its stroke, the lift pad 430 is separated from the base 140' by a rotational displacement 940 equal to twice the distance "d". Thereafter, the lift pad 430 can rotate from a first angular orientation to a second angular orientation relative to, for example, the base 140'. Thereafter, the lift pad and base configuration 400 can return to the processing position for additional processing cycles or return to the transfer position for wafer transfer.

[0145] Figure 9C is a diagram showing the orientation of the lift pad 430 relative to the base 140' in the lift pad and base configuration 400 during a first processing sequence, a rotation sequence, and a second processing sequence, according to an embodiment of the present disclosure, where the lift pad is sized to approximate a wafer. In particular, Figure 9C shows the relative orientation of the lift pad 430 and the base 140' (e.g., relative to each other and / or relative to the coordinate system 950 in the chamber) when the lift pad and base configuration 400 is in the processing position for a first number of processing cycles, when the configuration 400 is in the rotated position, and when the configuration 400 is in the processing position for a second number of processing cycles.

[0146] As shown, during a first number of processing cycles, the lift pad and base configuration 400 is in the processing position. In particular, both the lift pad 430 and the base 140' have an angular orientation of 0 degrees relative to the coordinate system 950 in the chamber. Moreover, the lift pad 430 has a first angular orientation of 0 degrees relative to the base 140' (i.e., the base 140' provides the coordinate system).

[0147] Additionally, Figure 9C shows the rotation of the lift pad 430 relative to the base 140' when the lift pad and base configuration 400 is in the rotated position. In particular, the base 140' remains stationary with an angular orientation of 0 degrees (e.g., with reference to the coordinate system 950), while the lift pad 430 rotates from an angular orientation of 0 degrees to 180 degrees. That is, the base 140' does not rotate. As shown, the lift pad 430 passes through an orientation where it has an angular orientation of 71 degrees midway.

[0148] In addition, during the processing cycle of the second quantity, the lift pad and the susceptor configuration 400 are again in the processing position. However, due to the rotation of the lift pad, the susceptor 140' still has an angular orientation of 0 degrees relative to the coordinate system 950 in the chamber, and the lift pad has an angular orientation of 180 degrees. In other words, when processing the first quantity of cycles, the lift pad 430 has an angular orientation of 0 degrees relative to the susceptor 140', and when processing the second quantity of cycles, after rotation, the lift pad 430, for example, has an angular orientation of 180 degrees relative to the susceptor 140'.

[0149] Figures 10A - 10C FIG. is a diagram showing the sequence of movement of the lift pad and susceptor configuration according to an embodiment of the present disclosure, where the lift pad is smaller than the wafer and includes rotating the wafer in the processing chamber without rotating the susceptor during processing, which advantageously filters out both the chamber asymmetry and the susceptor asymmetry. More specifically, Figure 10B shows first in Figure 6 and 7A -7B the lift pad and susceptor configuration 600. Figure 10C shows first in Figure 7C the lift pad and susceptor configuration 600' introduced therein, and also includes a lift pin assembly.

[0150] In particular, Figure 10A shows the lift pad and susceptor configuration 600, which includes a susceptor 140'' and a lift pad 630. The lift pad and susceptor configuration 600 is configured such that the lift pad 630 provides a lifting action and eliminates the need for a lift pin assembly. Specifically, in the transfer position, the lift pad and susceptor configuration 600 is configured such that the susceptor 140'' is in the downward position, where the lift pad 630 is separated from the susceptor 140'' by a large enough displacement for the end effector arm to enter. Figure 10A Also shown is the lift pad and susceptor configuration 600 in the processing position, where one or more films can be deposited (e.g., PECVD and ALD processing) during wafer processing in single - station and multi - station systems. Figure 10A Also shown is the lift pad and susceptor configuration 600 in the rotation position, where the susceptor 140'' is in the upward position (e.g., the top - most upward position), and the lift pad 630 is separated from the susceptor 140'' by a processing rotation displacement (e.g., 1 mm).

[0151] Figure 10B According to an embodiment of the present disclosure provides Figure 10A more details, and shows the sequence of movement of the lift pad and susceptor configuration 600, where the lift pad is smaller than the wafer and includes rotating the wafer in the processing chamber without rotating the susceptor during processing, which advantageously filters out both the chamber asymmetry and the susceptor asymmetry.

[0152] In the transfer position of the lift pad and susceptor configuration, the bottom of the susceptor 140" is at the level within the corresponding chamber indicated by line 901. In particular, in one embodiment, the susceptor 140" is at its lowest level. In one embodiment, the transfer position is lower than the pre - coating position indicated by line 902, and lower than the processing position indicated by line 903, and lower than the rotation position indicated by line 904. As shown, the lift pad 630 is separated from the susceptor 140" by a displacement 969 sufficient to enable the arm of the end - effector to transfer (place the wafer onto the lift pad 630, or remove the wafer from the lift pad 630), as Figure 10B shown. In one embodiment, when the susceptor 140" approaches the bottom of its travel, the coupling mechanism raises the lift pad 630 such that the lift pad 630 is separated from the top surface of the susceptor by the displacement 969.

[0153] Figure 10B Also shown is the lift pad and susceptor configuration 600 in the pre - coating position, where a pre - coating layer and a bottom - coating layer of the film are deposited in the processing chamber before processing the wafer. In the pre - coating position, the bottom of the susceptor 140" is at the level within the corresponding chamber indicated, for example, by line 902. The pre - coating position can be defined at any position within the chamber and is not limited to the level indicated by line 902. As shown, the lift pad 630 rests on the susceptor 140", as previously described.

[0154] In the processing position of the lift pad and susceptor configuration 600, the bottom of the susceptor 140" is at the level within the corresponding chamber indicated by line 903. In one embodiment, the susceptor 140" is close to its top - most position or level within the chamber, but the processing position can be at any level within the chamber, depending on the chamber and / or process implemented, as previously described. As shown, the lift pad 630 rests on the susceptor 140". Additionally, the lift pad 630 is in a first angular orientation relative to the susceptor 140".

[0155] In one embodiment, in the rotational position of the lift pad and the base configuration 600, the bottom of the base 140 is at the topmost level in the corresponding chamber as indicated by line 904. The lift pad 630 is separated from the base 140” by a rotational displacement 1040 (e.g., about 1 mm). In one embodiment, when the base 140” approaches the top of its stroke, the coupling mechanism raises the lift pad 630 via the pad shaft 560 such that the lift pad 630 is separated from the top surface of the base by the rotational displacement 1040. In one embodiment, when the base 1140” approaches the top of its stroke, the coupling mechanism raises the lift pad 630 such that the lift pad 630 is separated from the top surface of the base by the rotational displacement 1040. For example, when the base 140” travels through a specific distance “f” to reach the top of its stroke, the lift pad 630 moves a greater distance, which can be a multiple of “f” (e.g., twice “f”). Thereafter, the lift pad 630 can rotate (e.g., relative to the base 140”) from a first angular orientation to a second angular orientation and then return to the processing position for another processing cycle, or return to the transfer position for wafer transfer.

[0156] Figure 10C One embodiment according to the present disclosure provides Figure 10A more details, and shows the sequence of movement of the lift pad and the base configuration 600' including the lift pin assembly, where the lift pad 630 is smaller than the wafer and includes rotating the wafer in the processing chamber during processing without rotating the base 140”, which advantageously filters out both the chamber asymmetry and the base asymmetry. As previously described, the lift pad and base configuration 600' includes a lift pad 630, a base 140”, and a lift pin assembly.

[0157] In the transfer position of the lift pad and the base configuration 600', the bottom of the base 140”' is at the level in the corresponding chamber as indicated by line 901. In particular, in one embodiment, the base 140”' is at its bottommost level. In one embodiment, the transfer position is lower than the pre - coating position indicated by line 902, and lower than the processing position indicated by line 903, and lower than the rotational position indicated by line 904. As shown, the lift pad 630 rests on the base 140”', as previously described. In addition, the lift pin 557' extends beyond the top surfaces of the base 140”' and the lift pad 630, in a position to receive a wafer conveyed by the arm of the end - effector, or in a position to remove a wafer by the end - effector, for example.

[0158] Figure 10CAlso shown is the lift pad and pedestal configuration 600' in a pre - coating position, where a pre - coating layer and a bottom - coating layer of a film are deposited in the processing chamber before processing a wafer. In the pre - coating position, the bottom of the pedestal 140''' is at the level within the respective chamber indicated, for example, by line 902. The pre - coating position can be defined at any position within the chamber and is not limited to the level indicated by line 902. As shown, the lift pad 630 rests on the pedestal 140''', as described previously. Additionally, when pre - coating deposition occurs and no wafer is on the lift pad and pedestal configuration, the lift pin 857 is positioned such that the top of the lift pin exactly fills the hole in the lift pad 830 that is in place during chamber pre - coating.

[0159] In the processing position of the lift pad and pedestal configuration 600', the bottom of the pedestal 140''' is at the level within the respective chamber indicated by line 903. As shown, the pedestal 140''' is near its top - most position or level within the chamber, but the processing position can be at any level within the chamber, as described previously. As shown, the lift pad 630 rests on the pedestal 140''', as described previously. Additionally, the lift pin 557' is positioned such that the top of the lift pin is within the pedestal 140''', but the top can also be positioned at any location within the pedestal 140'''.

[0160] In one embodiment, in the rotation position of the lift pad and pedestal configuration 600', the bottom of the pedestal 140''' is at the top - most level within the respective chamber indicated by line 904. The lift pad 630 is separated from the pedestal 140''' by a processing rotational displacement 1040 (e.g., approximately 1 mm). In one embodiment, when the pedestal 140''' approaches the top of its stroke, the coupling mechanism raises the lift pad 630 via the pad shaft 560' such that the lift pad 630 is separated from the pedestal top surface by the rotational displacement 1040. In one embodiment, when the pedestal 140''' approaches the top of its stroke, the coupling mechanism raises the lift pad 630 such that the lift pad 630 is separated from the pedestal top surface by the rotational displacement 1040. For example, when the pedestal 140''' moves through a distance "f" to reach the top of its stroke, the lift pad 630 moves a greater distance, which can be a multiple of "f" (e.g., twice "f"). Thereafter, the lift pad 630 can rotate (e.g., relative to the pedestal 140''') from a first angular orientation to a second angular orientation and then return to the processing position for additional processing cycles, or return to the transfer position for wafer transfer.

[0161] Figure 10DFIG. shows the orientation of lift pad 630 relative to base 140” in lift pad and base configuration 600, or relative to base 140”' in lift pad and base configuration 600' during a first processing sequence, a rotation sequence, and a second processing sequence, where the lift pad 630 is smaller than the wafer. In particular, Figure 10D shows the relative orientation of lift pad 630 and base 140” / base 140” when the lift pad and base configuration 600 / 600' is in a processing position for a first number of processing cycles, in a rotation position, or in a processing position for a second number of processing cycles (e.g., relative to each other and / or relative to the coordinate system 1050 in the chamber).

[0162] As shown, during a first number of processing cycles, the lift pad and base configuration 600 / 600' is in a processing position. In particular, both the lift pad 630 and the base 140” / 140”' have an angular orientation of 0 degrees relative to the coordinate system 1050 in the chamber. Moreover, the lift pad 630 has a first angular orientation of 0 degrees relative to the base 140” / 140”' (i.e., the base 140” / 140”' provides the coordinate system).

[0163] In addition, Figure 10D shows the rotation of the lift pad 630 relative to the base 140” / 140”' when the lift pad and base configuration 600 / 600' is in a rotation position. In particular, the base 140” / 140”' remains stationary with an angular orientation of 0 degrees (e.g., with reference to the coordinate system 1050), while the lift pad 630 rotates from an angular orientation of 0 degrees to 180 degrees. That is, the bases 140” and 140”' do not rotate. As shown, the lift pad 630 passes through an orientation where it has an angular orientation of 71 degrees midway.

[0164] Furthermore, during a second number of processing cycles, the lift pad and base configuration 600 / 600' is again in a processing position. However, due to the rotation of the lift pad, the base 140” / 140”' still has an angular orientation of 0 degrees relative to the coordinate system 1050 in the chamber, and the lift pad has an angular orientation of 180 degrees. In other words, when processing the first number of cycles, the lift pad 630 has an angular orientation of 0 degrees relative to the base 140” / 140”', and when processing the second number of cycles, the lift pad 630 has an angular orientation of 180 degrees relative to the base 140” / 140”' after rotation.

[0165] Lifting pad lifting mechanism

[0166] In an embodiment of the present disclosure, the lift pad elevation mechanism disclosed in FIGS. 11 - 17 is generally applicable to that previously in Figure 1 - 1The lift pad and base configurations introduced in 0. That is, various embodiments of the disclosed lift pad elevation mechanisms can be implemented with the lift pad separated from the base in a lift pad and base configuration, the lift pad and base configuration including a lift pad having a diameter dimension approximating the diameter of the wafer and / or a lift pad having a diameter smaller than the diameter of the wafer.

[0167] Figure 11A FIG. 4 is a perspective view of a substrate processing system including a lift pad and base configuration 1100 according to an embodiment of the present disclosure, and shows a short-stroke pad elevation mechanism 440-A configured to separate a lift pad (not shown) from a base 140-A. The lift pad and base configuration 1100 is located within a main frame 1105, where the main frame 1105 is placed in a processing chamber (e.g., fixed within the processing chamber). Movement of the base 140-A is provided relative to the main frame, and movement of the lift pad is provided relative to the main frame 1105 (which moves with the base 140-A) and the base 140-A (separate from the base 140-A). To rotate the lift pad (and the wafer disposed thereon) relative to the base 140-A, the lift pad can be separated from the base 1140-A. To enable an end effector to perform wafer transfer (e.g., place a wafer onto the lift pad or remove a wafer from the lift pad), lift pad separation can also be enabled.

[0168] In an embodiment, the lift pad and base configuration 1100 including the short-stroke pad elevation mechanism 440-A can be configured to support a lift pad having dimensions substantially similar to those of the wafer (e.g., the diameter dimensions of the lift pad and the wafer are substantially similar). For example Figure 4 、 5A the lift pad and base configurations shown in FIGS. 5C and 9A-9C. Additionally, according to an embodiment of the present disclosure, the lift pad and base configuration 1100 including the short-stroke pad elevation mechanism 440-A can be configured to support a lift pad smaller than the wafer (e.g., the diameter of the lift pad is smaller than the diameter of the wafer), such as Figure 6 、 7A the lift pad and base configurations shown in FIGS. 5-F and 10A-10D. In some embodiments, the lift pad and base configuration 1100 allows integration with a carrier ring assembly (not shown). In other embodiments, the lift pad and base configuration 1100 can be implemented in single-station and / or multi-station processing tools.

[0169] The base 140-A of the lift pad and base configuration 1100 can be controlled by Figure 4 and 6 a base control device 450 such that movement of the base 140-A is through Figure 5B a base and lift pad actuator 515 of Figures 7B - 7CThe base and lift pad actuator 515' in implement. In particular, the central shaft 510-A is interconnected to the base 140-A and the base support 1101 such that movement of the base support relative to the main frame 1105 is translated into movement of the base 140-A. For example, during preprocessing, processing, and postprocessing sequences, the base control device 450 controls the movement of the base support to cause movement in the base 140-A (e.g., up and down along the central axis 471-A shown in Figure 14C ). In particular, the Z motor 445-A is configured to drive a ball screw (not shown) (e.g., Figure 4 's ball screw 443), which is interconnected to a slider / carriage (not shown) via a ball screw nut such that rotation of the ball screw is translated into movement of the carriage (e.g., in the z direction) parallel to the central axis 471-A. The Z motor 445-A and the ball screw (and other associated components) remain fixed relative to the main frame 1105 such that the movement of the carriage is relative to the main frame 1105. Additionally, the base support 1101 is interconnected to the carriage such that movement of the carriage is translated into movement of the base support 1101. The bellows 420-A facilitates the movement of the base 140-A.

[0170] The lift pads of the lift pad and base configuration 1100 can be controlled by Figure 4 and 6 's lift pad control device 455 such that the movement of the lift pads is implemented by Figure 5B 's base and lift pad actuator 515 and / or Figures 7B - 7C 's base and lift pad actuator 515'. In particular, the lift pad control device 455 controls the movement of the lift pad shaft 560-A to cause movement in the lift pads. In particular, the pad shaft 560-A extends from the lift pads along the central axis 471-A, as shown in Figure 14C . For example, the pad shaft 560-A is interconnected to an iron seal assembly 425-A, which is interconnected to the base support via a short-stroke lift pad elevation mechanism 440-A. The elevation mechanism 440-A was first introduced as the short-stroke coupling mechanism 440 in Figure 4 and is further shown in Figure 7AAs shown, the short-stroke coupling mechanism 440 is configured to provide movement of the lifting pad relative to the base 140-A. The iron seal assembly 425-A is movably attached to the base support 1101 via the short-stroke pad lifting mechanism 440-A. In this way, the movement of the base support 1101 is converted into a combined movement of the base 140-A and the lifting pad, as described above. In particular, the movement of the base support 1101 when the short-stroke lifting pad raising mechanism 440-A is not engaged provides movement of the base 140-A and the lifting pad so that no separation occurs between the lifting pad and the base 140-A. When the lifting pad raising mechanism 440-A is engaged, the lifting pad performs additional movement relative to the base 140-A to cause separation. The iron seal assembly 425-A includes a short-stroke bellows, which is configured to facilitate movement of the lifting pad through the pad shaft. The iron seal assembly 425-A is configured to provide a vacuum seal around the pad shaft 560-A when the pad shaft 560-A is rotating and when the pad shaft 560-A is not rotating.

[0171] In addition, the iron seal assembly 425-A facilitates the rotation of the lift pad shaft 560-A contained therein in the vacuum environment. For example, the iron seal assembly 425-A includes a rotation / theta motor 427-A in a pulley arrangement, which is configured for rotation of the lift pad shaft 560-A, and correspondingly for rotation of the lift pad relative to the base 140-A. The electrical slip ring 1125 is configured to provide transmission of power and / or electrical signals through the lift pad shaft 560-A configured for rotation.

[0172] In addition, the lifting pad and base arrangement 1100 includes an upper bearing assembly 755-A (which is Figure 7D 16-17 ), and a lower bearing assembly 1120. The upper bearing assembly 755-A and the lower bearing assembly 1120 are configured to center the lift pad shaft 560-A within the central axis 510-A.

[0173] Figure 11B According to an embodiment of the present disclosure Figure 11A 1100 and further illustrates components of a short-stroke pad lift mechanism 440-A. In particular, the pad lift mechanism 440-A includes an upper hard stop 1210 and a lower hard stop 1211, both of which are fixed relative to the main frame 1105. The support rollers 1221 and 1222 are fixed relative to the base support so that movement of the slide / carrier (not shown) (which is interconnected with the ball screw (not shown)) in the Z direction is converted into corresponding movement of the support rollers 1221 and 1222 in the Z direction. The movement of the short-stroke pad lift mechanism 440-A will be combined with the Figures 12A - 12B and Figure 13 Describe more fully.

[0174] The short-stroke pad lift mechanism 440-A is in a neutral position when not engaged and is configured to provide simultaneous movement of the base 140-A and the lift pad such that no separation occurs between the lift pad and the base 140-A. In the neutral position, the upper hard stop 1210 and the lower hard stop 1211 are not engaged (e.g., with the rod 1225), and the rod 1225 is loosely constrained between the bracket rollers 1221 and 1222.

[0175] On the other hand, when the lift pad lift mechanism 440-A is engaged, the lift pad undergoes additional movement relative to the base 140-A to cause separation between the lift pad and the base 140-A. In particular, the rod 1225 engages with the upper hard stop 1210 to cause movement of the lift pad relative to the base 140-A, thereby providing rotation of the lift pad relative to the base 140-A. Also, the rod 1225 engages with the lower hard stop 1211 to cause movement of the lift pad relative to the base 140-A such that the end effector can enter for wafer transfer. Additionally, the pivot yoke 1240 is configured to counteract and / or eliminate the torque applied to the upper and lower bearings of the pad shaft 560-A due to actuation of the lift pad lift mechanism 440-A. More specifically, the lift pad lift mechanism 440-A is configured to cause repeated separation of the lift pad relative to the base 140-A to maximize the life of the respective components. For example, without any torque counteraction or elimination, the bearing assembly (e.g., the high-temperature bearing 755-B) on the pad shaft 560-A would fail prematurely. Thus, the various yoke assemblies implemented within the lift pad lift mechanism 440-A are configured to counteract and / or eliminate the torque applied to the bearings of the pad shaft 560-A due to the lift of the lift pad in order to minimize wear.

[0176] Figure 12A is a substrate processing system including Figure 11A - 11B a perspective view of the short-stroke lift pad lift mechanism 440A of the lift pad and base configuration 1100 according to an embodiment of the present disclosure. The lift pad and base configuration 1100 including the short-stroke pad lift mechanism 440-A can be configured to support a lift pad that is substantially similar in size (e.g., diameter) to the wafer size, or a lift pad that is smaller in size (e.g., diameter) than the wafer.

[0177] In one embodiment, Figure 12AThe lift pad raising mechanism 440A shown in FIG. is configured to raise the lift pad to rotate relative to the base 140-A by engaging with the upper hard stop 1210, and to raise the lift pad to cause the end effector to enter relative to the base 140-A by engaging with the lower hard stop 1211. In other embodiments, the lift pad and base configuration 1100 can be modified to provide any of the lift pad raising motions provided by the short-stroke lift pad raising mechanism 440A. For example, the lift pad raising mechanism 440A can be modified to include only the upper hard stop 1210, which is used to lift the lift pad to rotate through relative to the base 140-A. In this case, the lift pin assembly can be configured within the lift pad and base configuration 1100 such that the end effector can enter.

[0178] As Figure 12A shown, the lift pad and base configuration 1100 is located within the main frame 1105, where the main frame 1105 is placed in the processing chamber (e.g., fixed within the processing chamber). The upper hard stop 1210 and the lower hard stop 1211 are fixed relative to the main frame 1105. For example, the upper hard stop 1210 can be directly fixed to the main frame 1105 or fixed through one or more intermediate components. In particular, the main frame extension 1106 is attached to the main frame 1105, and both the upper hard stop 1210 and the lower hard stop 1211 are attached to the main frame extension 1106. In this way, the upper hard stop 1210 and the lower hard stop 1211 do not move relative to the main frame 1105.

[0179] The lift pad and base configuration 1100 includes a base bracket 1101, which is movably interconnected to the main frame 1105 through a slider / carrier and a ball screw / Z-motor 445-A device, as described above. For example, the base bracket 1101 (e.g., through the bellows 420-A) is attached to the central axis 510-A of the base 140-A, such that any movement in the base bracket 1101 caused by the actuation of the ball screw / Z-motor 445-A device is translated into movement in the base 140-A. Additionally, the slider 1235 is fixed relative to the base bracket 1101. In this way, the slider 1235 moves in the same linear z-direction as the base bracket 1101.

[0180] The base bracket extensions 1231 / 1232 are fixed relative to the base bracket 1101. For example, the base bracket extensions 1231 / 1232 can be directly attached to the base bracket 1101. Additionally, the support roller 1221 is attached to the base bracket extension 1231. Similarly, the support roller 1222 is attached to the base bracket extension 1232. In this way, the support rollers 1221 / 1222 move in the same linear z-direction as the base bracket 1101.

[0181] The lift pad and base configuration 1100 includes a lift pad bracket 1230 that is movably attached to a slider 1235. Since the slider 1235 is fixed relative to the base bracket 1101, any movement in the base bracket 1101 is translated into the same movement of the slider 1235 in the linear z-direction. Additionally, because the lift pad bracket 1230 is movably attached to the slider 1235, the lift pad bracket 1230 can have additional movement relative to the base bracket 1101 (e.g., to cause the lift pad to separate from the base 140-A). The interface between the base bracket 1101, the slider 1235, and the lift pad bracket 1230 will be described more fully Figure 13 below.

[0182] The lift pad and base configuration 1100 includes a yoke 1240 that is rotatably attached to the lift pad bracket 1230. When the short-stroke lift pad elevation mechanism 440-A engages (e.g., the rod 1225 engages the upper hard stop 1210 or the lower hard stop 1211), the yoke 1240 is connected to the iron seal assembly 425-A via rollers 1255 / 1256. The iron seal assembly 425-A, introduced first in Figure 4 and 6 includes connector arms 1251 / 1252 that are located on opposite sides of the iron seal assembly 425-A. The roller 1255 is attached to one end of the connector arm 1251, and the roller 1256 is attached to one end of the connector arm 1252 such that the rollers 1255 / 1256 are located on opposite sides of the iron seal assembly 425-A. The yoke 1240 is configured to counteract and / or eliminate the moment applied to the pad shaft 560-A when the pad elevation mechanism 440-A is actuated to separate the lift pad from the base 140-A. The interface between the yoke and the iron seal assembly 425-A will be described more fully Figure 13 below.

[0183] The lift pad and base configuration 1100 includes a rod 1225 that is rotatably attached to the lift pad bracket 1230 via a pin 1226. Thus, any movement in the pin 1226 will be translated into a similar movement of the iron seal assembly 425-A relative to the base 140-A and the base bracket 1101. For example, the movement of the pin 1226 is caused by the engagement between the rod 1225 and the upper hard stop 1210 or the lower hard stop 1211. Accordingly, any movement in the pin 1226 is translated into a similar movement of the pad shaft 560-A and the attached lift pad relative to the base 140-A. The interface between the pin 1226, the rod 1225, the lift pad bracket 1230, the iron seal assembly 425-A, and the pad shaft 560-A will be described more fully Figure 13 and 14A in -14D below.

[0184] Figure 12B is shown in accordance with an embodiment of the present disclosure Figure 11A - 11B and a diagram of the movement sequence of the short-stroke pad lift mechanism 440-A of the lift pad and base configuration 1100 of 12A. In one embodiment, the short-stroke pad lift mechanism 440-A can be implemented in the lift pad and base configuration 1100, where the diameter of the lift pad is smaller than the diameter of the wafer, such that the lift pad can be lifted to enable the lift pad to rotate relative to the base 140-A, and also provide a lift of the lift pad to allow the end effector to enter for wafer transfer. Additionally, in another embodiment, the short-stroke pad lift mechanism 440-A can be implemented in the lift pad and base configuration 1100, where the diameter of the lift pad is approximately the same size as the diameter of the wafer, such that the lift pad can be lifted to allow the lift pad to rotate relative to the base 140-A. In this case, wafer transfer can be accomplished by the lift pin assembly.

[0185] The lift pad and base configuration 1100 is shown in state 1203, where the short-stroke lift pad lift mechanism 440-A is in a neutral state. The short-stroke pad lift mechanism 440-A is in a neutral position when not engaged and is configured to provide simultaneous movement of the base 140-A and the lift pad, where the lift pad rests on the base 140-A by a base reference force (e.g., approximately 1 pound during processing and approximately 15 pounds when the chamber is at atmosphere), such that no separation occurs between the lift pad and the base 140-A. For example, the base reference force is applied in part by the weight of the pad shaft 560-A and the iron seal assembly 425-A and the spring (e.g., the force applied by their spring constant), such that when the pad lift mechanism 440-A is in the neutral state, the lift pad constantly references the base 140-A. The spring 1411 is used to compensate for and / or eliminate any torque caused by the θ motor 427-A acting on the pad shaft 560-A due to the θ motor 427-A deviating from the pad shaft 560-A.

[0186] More specifically, when the pad elevation mechanism 440-A is in the neutral state, the rod 1225 rotatably attached to the pin 1226 does not engage with the upper hard stop 1210 nor the lower hard stop 1211, both of which are fixed relative to the main frame 1105. That is, the rod 1225 is loosely constrained between the support rollers 1221 and 1222, both of which are fixed relative to the base support 1101 and also move with the slider / carriage movably attached to the ball screw. Thus, when the short-stroke pad elevation mechanism 440-A is in the neutral position, the pin 1226 moves with the base support 1101, and actuation of the Z motor 445-A and the ball screw causes any movement in the base support 1101 to translate into simultaneous movement of the base 140-A and the lift pad. For example, when the base 140-A moves with the base support 1101 attached to the slider / carriage in response to the ball screw, the lift pad moves with the base 140-A because the lift pad rests on the base.

[0187] On the other hand, when the lift pad elevation mechanism 440-A engages, the lift pad undergoes additional movement relative to the base 140-A to cause separation between the lift pad and the base 140-A. Specifically, the states 1204 and 1205 of the lift pad and base configuration 1100 show the engagement of the upper hard stop 1210 (e.g., a roller) to separate the lift pad from the base 140-A such that the lift pad can rotate. The states 1201 and 1202 of the lift pad and base configuration 1100 show the engagement of the lower hard stop 1211 (e.g., a roller) to separate the lift pad from the base 140-A such that the end effector arm can enter for wafer transfer.

[0188] In the state 1204 of the lift pad and base configuration 1100, the short-stroke lift pad elevation mechanism 440-A begins to engage with the upper hard stop 1210. Specifically, the base support 1101 approaches its topmost stroke in the z direction. As shown, the lift pad and base configuration 1100 approaches its topmost position when traveling upward in the z direction relative to the main frame 1105. That is, as the base 140-A and the base support 1101 move upward (e.g., the base 140-A approaches its topmost position), the rod 1225 begins to engage with the upper hard stop 1210. Thus, the pad elevation mechanism 440-A is about to or has begun to leave the neutral state.

[0189] In state 1205, the lift pad and base configuration 1100 is configured to raise the lift pad (e.g., by about 1 mm) to create a separation between the lift pad and the base 140-A through upward movement of the base to accommodate rotation of the lift pad by actuation of the short-stroke pad raising mechanism 440-A. In particular, the short-stroke lift pad raising mechanism 440-A is fully engaged with the upper hard stop 1210. That is, the base 140-A and the base bracket 1101 continue to move upward until the base bracket 1101 reaches its topmost position. In this case, the rod 1225 is fully engaged with the upper hard stop 1210, and the rod 1225 rotates fully about the pin 1226. That is, a downward force is applied to the rod 1225 through the upper hard stop 1210, and an upward force is applied to the rod 1225 through the bracket roller 1222 to cause the rod 1225 to rotate (e.g., clockwise) about the pin 1226. Since the rod is rotatably fixed to the pin 1226 and the pin is movably attached to the slider 1235 (fixed relative to the base bracket 1101), the rotation of the rod 1225 is translated into a linear movement (z-direction) of the pin 1226 relative to the base 140-A and the base bracket 1101. Additionally, since the generated force (from the interaction of the rod with the upper hard stop 1210 and the bracket roller 1222) is relatively close to the pin 1226, the linear movement in the pin 1226 is small (e.g., about 1 mm). Furthermore, the linear movement in the pin 1226 is translated into a linear movement of the pad shaft 560-A through interaction with the yoke 1240 and the iron seal assembly 425-A to create a separation between the lift pad and the base 140-A, as will be described more fully in conjunction with Figures 14A - 14D as described more fully below.

[0190] In state 1201 of the lift pad and base configuration 1100, the short-stroke lift pad raising mechanism 440-A begins to engage with the lower hard stop 1211. Specifically, the base bracket 1101 approaches its bottommost stroke in the z-direction. As shown, the lift pad and base configuration 1100 approaches its bottommost position when traveling downward in the z-direction relative to the main frame 1105. That is, when the base 140-A and the base bracket 1101 move downward (e.g., the base 140-A approaches its bottommost position), the rod 1225 begins to engage with the lower hard stop 1211. In this way, the pad raising mechanism 440-A is about to or begins to leave the neutral state.

[0191] In state 1202, the lift pad and base configuration 1100 are configured to raise the lift pad (e.g., by about 14 - 18 mm) to create a separation between the lift pad and the base 140 - A through the downward movement of the base, thereby actuating the short - stroke pad raising mechanism 440 - A to facilitate the entry of the end effector for wafer transfer. In particular, the short - stroke lift pad raising mechanism 440 - A is fully engaged with the lower hard stop 1211. That is, the base 140 - A and the base support 1101 continue to move downward until the base support 1101 reaches its bottom - most position. In this case, the rod 1225 is fully engaged with the lower hard stop 1211, and the rod 1225 rotates sufficiently about the pin 1226. That is, an upward force is applied to the rod 1225 through the lower hard stop 1211, and a downward force is applied to the rod 1225 through the support roller 1221 to cause the rod 1225 to rotate (e.g., clockwise) about the pin 1226. Since the rod is rotatably fixed to the pin 1226 and the pin is movably attached to the slider 1235 (fixed relative to the base support 1101), the rotation of the rod 1225 is translated into a linear motion (z - direction) of the pin 1226 relative to the base 140 - A and the base support 1101. Since the generated force (from the interaction of the rod with the lower hard stop 1211 and the support roller 1221) is relatively far from the pin 1226, the linear motion in the pin 1226 is more significant (e.g., about 14 - 18 mm). In addition, the linear motion in the pin 1226 is translated into a linear motion of the pad shaft 560 - A through the interaction with the yoke 1240 and the iron seal assembly 425 - A to create a separation between the lift pad and the base 140 - A, as will be described more fully in conjunction with Figures 14A - 14D is described more fully.

[0192] Figure 13 is of an embodiment in accordance with the present disclosure Figure 12A a perspective view of the short - stroke lift pad raising mechanism 440 - A, and more particularly shows the interface between the slider 1235 and the yoke 1240, which provides movement of the lift pad relative to the base 140 - A. In particular, the slider 1235 is fixed relative to the base support 1101. For example, the slider 1235 can be directly, or through one or more intermediate components, such as through a base support extension 1233 that can be directly attached to the base support 1101, attached to the base support 1101. Thus, any linear motion in the base support 1101 (e.g., in the z - direction) is translated into a similar motion in the slider 1235 (e.g., in the z - direction).

[0193] In addition, the lift pad bracket 1230 is movably attached to the slider 1235. When the short-stroke lift pad raising mechanism 440-A is in its neutral state, the lift pad bracket 1230 moves with the slider 1235 such that no relative movement is experienced between the lift pad bracket 1230 and the base bracket 1101. Thus, any linear movement in the base bracket 1101 (e.g., in the z-direction) is translated into a similar movement in the lift pad bracket 1230 (e.g., in the z-direction). On the other hand, when the pad raising mechanism 440-A engages the upper hard stop 1210 or the lower hard stop 1211, the lift pad bracket moves upward relative to the base bracket 1101 by the action of the slider 1235. Figure 13 Also shown is a yoke 1240 rotatably attached to the lift pad bracket 1230 by a pin 1226.

[0194] Figure 14A is of an embodiment according to the present disclosure Figure 12A perspective view of the lift pad raising mechanism 440-A, and more particularly shows the interface between the yoke 1240 and the iron seal assembly 425-A, which provides movement of the lift pad relative to the base. In particular, the yoke 1240 is rotatably attached to the lift pad bracket 1240 by a pin 1226. The yoke 1240 is configured to be connected to the iron seal assembly 425-A. In this way, any linear movement of the pin 1226 is transferred to the lift pad bracket 1240, further transferred to the yoke 1240, and further transferred to the iron seal assembly 425-A. In particular, any linear movement of the yoke 1240 is further translated into a similar linear movement in the pad shaft 560-A and the lift pad by the iron seal assembly 425-A.

[0195] Figure 14B is a perspective view of the yoke 1240 connected to the iron seal assembly 425-A of an embodiment according to the present disclosure. The yoke 1240 is rotatably attached to the lift pad bracket 1230 by a pin 1247. As shown, the yoke base 1245 is rotatably attached to the lift pad bracket 1230. The yoke arm 1246 extends from the yoke base 1245. In addition, both the yoke fork extension 1241 and the yoke fork extension 1242 extend from the yoke arm 1246. More specifically, Figure 14B is shown according to an embodiment of the present disclosure Figure 12AThe interface between the yoke fork extensions 1241 / 1242 of the lift pad elevation mechanism 440-A and the connector arms 1251 / 1252 of the iron seal assembly provides movement of the lift pad relative to the base 140-A. In particular, upward movement of the yoke 1240 causes the yoke fork extensions 1241 / 1242 to engage the rollers 1255 / 1256. That is, the yoke fork extension 1241 engages the roller 1255 attached to the iron seal connector arm 1251, and the yoke fork extension 1242 engages the roller 1256 attached to the iron seal connector arm 1252. Since the pin 1226 is fixed relative to the yoke 1240, and when the pad elevation mechanism 440-A engages (e.g., through the engagement of the yoke fork extensions 1241 / 1242 with the rollers 1255 / 1256), the yoke 1240 is fixed relative to the pad shaft 560-A via the iron seal assembly 425-A, so when the pin 1226 experiences linear movement in the z direction relative to the base 140-A and the base bracket 1101 (e.g., when the rod 1225 engages the upper hard stop 1210 or the lower hard stop 1211), this movement is translated into linear movement in the z direction of the pad shaft 560-A to create a separation between the lift pad and the base 140-A.

[0196] In addition, the pivot yoke 1240 is configured to counteract and / or eliminate the torques applied to the upper and lower bearings of the pad shaft 560-A due to the actuation of the lift pad elevation mechanism 440-A. In particular, the yoke 1240 pivots about the pin 1247 and is configured to balance forces along the stroke center axis 471-A such that no torque or an insignificant torque is applied to the upper and lower bearings of the pad shaft 560-A. That is, the yoke 1240 creates equal forces on the rollers 1255 / 1256 through the contact of the fork extensions 1241 / 1242, and the rollers 1255 / 1256 are fixed relative to the iron seal assembly 425-A via the respective connector arms 1251 / 1252 to counteract and / or cancel the torques applied to the upper and lower bearings of the pad shaft 560-A.

[0197] Figure 14C is a perspective view of a clamping mechanism according to an embodiment of the present disclosure, which provides a link between the components of the iron seal assembly 425-A and the pad shaft 560-A extending from the lift pad. In this way, any linear movement of the iron seal assembly 425-A (e.g., in the z direction) is translated into a similar linear movement of the lift pad (e.g., in the z direction). In particular, the bottom of the iron seal assembly 425-A has a disk 1440 and a clamp 1430 extending from the disk 1420. The clamp 1430 is clamped onto the pad shaft 560-A such that any rotation of the disk 1440 is translated into rotation of the pad shaft 560-A. For example, the rotation of the disk 1440 is achieved through the movement of a pulley 1420, such movement being provided, e.g., by a θ motor 427-A.Figure 14D of the gripping member 1430 according to an embodiment of the present disclosure Figure 14C Perspective view of the gripping member 1430, wherein the gripping mechanism provided by the gripping member 1430 rigidly attaches the disk 1440 and the gripping member 1430 to the pad shaft 560 - A.

[0198] Figure 15A Perspective view of a substrate processing system including a lift pad and a base configuration 1500 according to an embodiment of the present disclosure, wherein a lift pin assembly (not shown) provides wafer transfer. Figure 15A Another short - stroke pad lift mechanism 440 - B is shown according to an embodiment of the present disclosure, which raises the lift pad relative to the base by upward movement of the base to accommodate rotation of the lift pad, wherein the size of the lift pad can be substantially similar to or smaller than the wafer.

[0199] According to an embodiment of the present disclosure, the short - stroke pad lift mechanism 440 - B is configured to separate the lift pad (not shown) from the base 140 - A. The lift pad and base configuration 1500 are located within the main frame 1105, wherein the main frame 1105 is placed in a processing chamber (e.g., fixed within the processing chamber). The movement of the base 140 - A is provided relative to the main frame, and the movement of the lift pad is provided relative to both the main frame 1105 (e.g., the lift pad moves together with the base support 1101) and the base 140 - A (separated from the base 140 - A). In order to rotate the lift pad (and the wafer disposed thereon) relative to the base 140 - A, the lift pad can be separated from the base 1140 - A.

[0200] The base 140 - A of the lift pad and base configuration 1500 can be controlled by Figure 4 and 6 the base control device 450 of, such that the movement of the base 140 - A is achieved by Figure 5B the base and lift pad actuator 515 of and / or Figures 7B - 7C the base and lift pad actuator 515' of. The lift pad of the lift pad and base configuration 1500 can be controlled by Figure 4 and 6 the lift pad control device 455 of, such that the movement of the lift pad is achieved by Figure 5B the base and lift pad actuator 515 of and / or Figures 7B - 7C the base and lift pad actuator 515' of.

[0201] Figure 15B of the present disclosure according to an embodiment Figure 15APerspective view of a substrate processing system including a lift pad and a base configuration 1500, and showing components of the short-stroke pad lift mechanism 440-B. In particular, the pad lift mechanism 440-B includes a base support roller 1521 fixed relative to the base bracket 1101. Additionally, the rod 1525 is rotatably attached to the iron seal assembly 425-A via a pin 1526, for example, via the connector arms 1251 / 1252. The pad lift mechanism 440-B includes two rods 1525 located on opposite sides of the iron seal assembly 425-A and acting together to lift the iron seal assembly 425-A relative to the base bracket 1101.

[0202] Figure 15C is according to an embodiment of the present disclosure Figure 15A Perspective view of the lift pad lift mechanism 440-B, and more particularly showing the interface between one of the rods 1525 and the iron seal assembly 425-A, which provides movement of the lift pad relative to the base 140-A. In particular, the pad lift mechanism 440-B includes a hard stop 1510 attached to the main frame 1105. When the base bracket 1101 moves upward relative to the main frame 1105, the rod 1525 also moves with the base bracket 1101 until it engages the hard stop 1510. When the rod 1525 engages the hard stop 1510, the rod 1525 rotates about the pin 1526 and causes a linear movement of the pin 1526 relative to the base bracket 1101 (e.g., in the z direction). For example, the rod 1525 is subjected to forces due to the hard stop and the base support roller 1521. Since the pin 1526 is fixed relative to the iron seal assembly 425-A, the linear movement in the pin 1526 is translated into a similar linear movement in the iron seal assembly 425-A and accordingly transferred to the pad shaft 560-A. Thus, when the pad lift mechanism 440-B engages the hard stop 1510, the lift pad separates from the base 140-A to cause the lift pad to rotate relative to the base 140-A.

[0203] Figure 15D is according to an embodiment of the present disclosure Figure 15A Perspective view of the lift pad lift mechanism 440-B, more particularly showing the interface between the yoke 1540 and the base bracket 1101, which provides movement of the lift pad relative to the base. As shown, the yoke 1540 is rotatably attached to the base bracket 1101. The yoke 1540 provides a balanced force on the iron seal connector arms 1251 / 1252. That is, the yoke 1540 balances the forces by its rotation to apply equal forces on either side of the iron seal assembly 425-A. Thus, upon any actuation of the pad lift mechanism 440-B, there is no or insignificant torque on the pad shaft 560-A (e.g., no effective radial force on the bearings of the shaft).

[0204] Figure 16A A diagram showing the movement of the lift pad lifting mechanism 440-B according to an embodiment of the present disclosure at a point just before the lift pad and the base are about to separate. As shown, in the lift pad and base configuration 1500, the short-stroke lift pad lifting mechanism 440-B begins to engage with the hard stop 1510. Specifically, the base bracket 1101 approaches its topmost stroke upward in the z-direction. As shown, when moving upward in the z-direction relative to the main frame 1105, the lift pad and base configuration 1500 is near its topmost position. That is, when the base 140A and the base bracket 1101 move upward (e.g., the base 140-A approaches its topmost position), the rod 1525 begins to engage with the hard stop 1510. In this way, the pad lifting mechanism 440-A is about to or begins to leave the neutral state. At this time, the lift pad 630-A rests on the base 140-A. For example, the base reference MCA 595-A still contacts the lift pad 630-A. Figure 15A Same as above

[0205] Figure 16B A diagram showing the movement of the lift pad lifting mechanism 440-B according to an embodiment of the present disclosure at a point after the lift pad 630-A and the base 140-A are separated. The lift pad and base configuration 1500 is configured to lift the lift pad 630-A (e.g., by about 1 mm) to create a separation between the lift pad 630-A and the base 140-A through the upward movement of the base 140-A to accommodate the rotation of the lift pad 630-A by actuating the short-stroke pad lifting mechanism 440-B. In particular, the short-stroke lift pad lifting mechanism 440-B is fully engaged with the hard stop 1510. That is, the base 140-A and the base bracket 1101 continue to move upward until the base bracket 1101 reaches its topmost position. In this case, the rod 1525 is fully engaged with the hard stop 1510, and the rod 1525 rotates sufficiently around the pin 1526. That is, a downward force is applied to the rod 1525 through the hard stop 1510, and an upward force is applied to the rod 1525 through the base support roller 1521 to cause the rod 1525 to rotate around the pin 1526 (e.g., clockwise). Since the rod is rotatably fixed to the pin 1526, and the pin 1526 is movably attached to the slider 1531 (which is fixed relative to the base bracket 1101), the rotation of the rod 1525 is converted into a linear motion (in the z-direction) of the pin 1526 relative to the base 140-A and the base bracket 1101. In addition, the linear motion in the pin 1526 is converted into a linear motion of the pad shaft 560-A through the iron seal assembly 425-A to create a separation between the lift pad and the base 140-A. Figure 15A Same as above

[0206] Figure 17AFIG. is a diagram of a high-temperature bearing assembly 755-A of the lift pad and base configuration 1100 shown in FIGS. 11-16 in accordance with an embodiment of the present disclosure. Referring first to Figure 7D The high-temperature bearing assembly 755-A is introduced. Although described in connection with a small lift pad 630-A having a diameter smaller than the wafer diameter, Figure 17A the high-temperature bearing assembly 755-A can be implemented with a lift pad having a diameter substantially similar in size to the wafer diameter. In an embodiment, the high-temperature bearing assembly 755-A is configured to operate in a high-temperature environment, such as in a chamber at 300 degrees Celsius or higher.

[0207] Figure 17A The high-temperature bearing assembly 755-A of Figure 16A - 1 is similar in structure to the high-temperature bearing assembly 755-B shown in FIG. 6-B and Figure 7D the high-temperature bearing assembly 755, except for the length of the internal sapphire bushing 1724. In particular, Figure 17A the length of the internal sapphire bushing 1724 in Figure 17A is configured to accommodate the separation of the lift pad from the base 140-A, so as to rotate the lift pad (and the wafer disposed thereon) relative to the base 140-A, and so as to allow the end effector to enter for wafer transfer (e.g., placing or removing the wafer from the lift pad). For rotation, the stroke of the lift pad relative to the base 140-A is about 1 mm, while the stroke of the lift pad for end effector entry is about 14-18 mm. Thus, Figure 16A - 1 the length L of the high-temperature bearing assembly 755-A of

[0208] is configured to accommodate the longer stroke of the lift pad for end effector entry. On the other hand, Figure 16A - 1 the high-temperature bearing assembly 755-B of FIG. 6-B is configured to only accommodate the separation of the lift pad from the base 140-A, so as to rotate the lift pad (and the wafer disposed thereon) relative to the base 140-A. For example, a lift pin assembly is provided for end effector entry. Thus, the length of the high-temperature bearing assembly 755-B does not need to accommodate the longer stroke of the lift pad for end effector entry and is much shorter than the length of the high-temperature bearing assembly 755-A. The description provided for the high-temperature bearing assembly 755-A applies to each high-temperature bearing assembly described throughout this application.

[0208] In addition, the previously described lift pad elevation mechanism 440-A is constructed such that no torque or an insignificant torque (e.g., radial force) is generated on the high-temperature bearing assembly 755-A (e.g., the A-thermal high-temperature bearing assembly). Specifically, when the lift pad elevation mechanism 440-A raises the pad shaft 560-A to separate the lift pad 630-A from the base 140, no torque or an insignificant torque is applied to the high-temperature bearing assembly 755-A.

[0209] As Figure 17AAs shown, the high-temperature bearing assembly 755-A includes an external laminate on the inner wall of the central shaft 510-A of the base 140-A, and an internal laminate on the outer diameter of the spacer shaft 560-A.

[0210] Specifically, the internal laminate includes a retaining / catching ring 1720, a load-distributing washer 1721, a wave spring washer 1722, a load-centering and distributing washer 1723, and an internal sapphire bushing 1724. The internal sapphire bushing 1724 has a top edge surface 1791 and a bottom edge surface 1792, both of which have a conical, angled, or tapered surface. Figure 17D An internal sapphire bushing 1724 having an annular shape of the high-temperature bearing assembly 755-A is shown in one embodiment. Thus, the internal sapphire bushing 1724 has a tapered cross-section. In addition, the load-centering and distributing washer 1723 has a wedge-shaped, conical, angled, or tapered surface. The conical surfaces for the load-centering and distributing washer 1723 and the internal sapphire bushing 1724 help center the spacer shaft 560-A within the central shaft 510-A.

[0211] In addition, the external laminate includes a retaining / catching ring 1710, a load-distributing washer 1711, a wave spring washer 1712, a load-centering and distributing washer 1713, and an external sapphire bushing 1714. The external sapphire bushing 1714 has a top edge surface 1781 and a bottom edge surface 1782, both of which have a conical, angled, or tapered surface. Figure 17C An external sapphire bushing 1714 according to an embodiment of the present disclosure is shown, which has an annular shape of the high-temperature bearing assembly 755-A. Thus, the external sapphire bushing 1714 has a tapered cross-section. In addition, the load-centering and distributing washer 1713 has a wedge-shaped, conical, angled, or tapered surface. The conical surfaces for both the load-centering and distributing washer 1713 and the external sapphire bushing 1714 help center the spacer shaft 560-A within the central shaft 510-A. The external sapphire bushing 1714 is configured to contact (e.g., frictionally) the internal sapphire bushing 1724 when the lift pad 630-A is separated from the base 140-A.

[0212] Figure 17A The lift pad and base configuration shown in includes centering bevels 1751 / 1752, which are configured together to support the high-temperature bearing assembly. For example, the centering bevel 1751 is located on the inner wall of the central shaft 510-A and can provide a retaining ability to place and hold the external laminate of the high-temperature bearing assembly 755-A within the central shaft 510-A. Additionally, the centering bevel 1752 is located on the outer diameter of the spacer shaft 560-A and can provide a retaining ability to place and hold the internal laminate of the high-temperature bearing assembly 755-A within the spacer shaft 560-A.

[0213] The high-temperature bearing assembly 755-A is configured to provide constant centering of the platen 560-A within the central shaft 510-A during operation of the platen 560-A (e.g., rotation, elevation, movement, etc.). Additionally, the high-temperature bearing assembly 755-A is configured to provide constant centering when exposed to varying temperatures. That is, the high-temperature bearing assembly 755-A can accommodate different thermal expansion rates between the base 140-A and the platen 560-A and between other components. For example, the sapphire compositions of the inner sapphire bushing 1724 and the outer sapphire bushing 1714 within the high-temperature bearing assembly 755-A accommodate the thermal mismatch between the platen 560-A and the base 140-A to provide constant centering of the platen 560-A within the central shaft 510-A of the base 140-A. More specifically, the inner and outer laminated metal components provide a preloading force due to thermal expansion and keep the corresponding tapered components (e.g., washers and bushings) centered.

[0214] Figure 17B is according to an embodiment of the present disclosure Figure 17A Perspective view of the high-temperature bearing assembly 75-A. In particular, the inner laminate of the high-temperature bearing assembly 755-A located on the outer diameter of the platen 560-A is shown. The inner laminate includes a retaining / catching ring 1720, a load distribution washer 1721, a spring wave washer 1722, a load centering and distribution washer 1723, and an inner sapphire bushing 1724. Additionally, the inclined surface 1752 is shown above the inner sapphire bushing 1724.

[0215] In one embodiment, the wave washer 1722 in the inner laminate has three contact points to facilitate the load distribution washer 1721 to evenly distribute the force on the catching ring 1720. Additionally, the wave washer 1712 in the outer laminate has three contact points to facilitate the load distribution washer 1711 to evenly distribute the force on the catching ring 1710.

[0216] Figure 18 The control module 1800 for controlling the above system is shown. In one embodiment, Figure 1The control module 110 may include some of the exemplary components of control module 1800. For example, control module 1800 may include a processor, a memory, and one or more interfaces. Control module 1800 may be used to control the devices in the system based in part on sensed values. By way of example only, control module 1800 may control one or more of valve 1802, filter heater 1804, pump 1806, and other devices 1808 based on sensed values and other control parameters. Control module 1800 receives sensed values, for example, only from pressure gauge 1810, flow meter 1812, temperature sensor 1814, and / or other sensors 1816. Control module 1800 may also be used to control process conditions during precursor delivery and film deposition. Control module 1800 will generally include one or more memory devices and one or more processors.

[0217] Control module 1800 may control the activities of the precursor delivery system and the deposition apparatus. Control module 1800 executes a computer program that includes a set of instructions for controlling process time, delivery system temperature, and differential pressure across the filter, valve position, gas mixture, chamber pressure, chamber temperature, substrate temperature, RF power level, substrate chuck or pedestal position, and other parameters for a particular process. Control module 1800 may also monitor the differential pressure and automatically switch vapor precursor delivery from one or more paths to one or more other paths. Other computer programs stored on a memory device associated with control module 1800 may be employed in some embodiments.

[0218] There will typically be a user interface associated with control module 1800. The user interface may include a display 1818 (e.g., a display screen of the equipment and / or process conditions and / or a graphical software display) and a user input device 1820 (such as a pointing device, keyboard, touch screen, microphone, etc.).

[0219] A computer program for controlling precursor delivery, deposition, and other processes in a process sequence may be written in any conventional computer-readable programming language (e.g., assembly language, C, C++, Pascal, Fortran, or others). The compiled object code or script is executed by the processor to perform the tasks identified in the program.

[0220] Control module parameters relate to process conditions such as filter differential pressure, process gas composition and flow rate, temperature, pressure, plasma conditions such as RF power level and low frequency RF frequency, cooling gas pressure, and chamber wall temperature.

[0221] The system software can be designed or configured in many different ways. For example, various chamber component subroutines or control objects can be written to control the operation of the chamber components necessary to perform the deposition process of the present invention. Examples of programs or program segments for this purpose include substrate positioning code, process gas control code, pressure control code, heater control code, and plasma control code.

[0222] The substrate positioning program can include program code for controlling chamber components that are used to load a substrate onto a pedestal or chuck and to control the spacing between the substrate and other parts of the chamber (such as gas inlets and / or targets). The process gas control program can include code for controlling gas composition and flow rate and optionally for flowing gas into the chamber prior to deposition to stabilize the pressure in the chamber. The filter monitoring program includes code for comparing a measured differential to a predetermined value and / or code for switching paths. The pressure control program can include code for controlling the pressure in the chamber by adjusting, for example, a throttle in the exhaust system of the chamber. The heater control program can include code for controlling the current to heating units for heating components in the precursor delivery system, to the substrate, and / or other parts of the system. Alternatively, the heater control program can control the delivery of a heat transfer gas such as helium to the substrate chuck.

[0223] Examples of sensors that can be monitored during the deposition process include, but are not limited to: mass flow control modules, pressure sensors such as pressure gauge 1810, temperature or thermal sensors, and thermocouples located in the delivery system, pedestal, or chuck (such as temperature sensor 1814 / 220). Appropriately programmed feedback and control algorithms can be used in conjunction with data from these sensors to maintain desired process conditions. The implementation of embodiments of the present disclosure in single-chamber or multi-chamber semiconductor processing tools has been described above.

[0224] In some implementations, the controller is part of a system, which can be part of the above examples. Such systems can include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (substrate pedestal, gas flow system, etc.). These systems can be integrated with electronics for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronics can be referred to as a "controller", which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, substrate transfer in and out of tools and other transfer tools and / or load locks connected or interfaced with a particular system.

[0225] Broadly speaking, a controller can be defined as electronics having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. The integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers executing program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files), and the individual settings (or program files) define the operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or die of a wafer.

[0226] In some implementations, the controller can be part of or coupled to a computer that is integrated with, coupled to, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud" or be all or part of a wafer fab host system, which can allow remote access to substrate processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria for multiple manufacturing operations, change the parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system via a network, which can include a local network or the Internet.

[0227] A remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool, and the controller is configured to interface with or control the tool. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber in communication with one or more integrated circuits remote (e.g., at the platform level or as part of a remote computer), which are combined to control the process on the chamber.

[0228] Example systems may include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, an orbit chamber or module, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0229] As described above, depending on the one or more processing steps to be performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in the material transport that shuttles a wafer container between tool locations and / or load ports in a semiconductor manufacturing facility.

[0230] The foregoing description of the embodiments has been provided for purposes of illustration and description. It is not exhaustive and does not limit the disclosure. The individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but are interchangeable and can be used in a selected embodiment, even if not specifically shown or described. The same may also vary in many respects. Such variations are not considered to be a departure from the disclosure, and all such modifications are intended to be included within the scope of the disclosure.

[0231] Although the foregoing embodiments have been described in considerable detail for purposes of clear understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. Accordingly, these embodiments are to be considered illustrative rather than restrictive, and these embodiments are not limited to the details given herein but may be modified within their scope and equivalents of the claims.

Claims

1. A lifting pad raising mechanism for a processing chamber, the lifting pad raising mechanism comprising: A lifting pad for a base, the base being mounted on a main frame, wherein the lifting pad is configured to rest on a top surface of the base of the base; A hard stop connected to the main frame; A roller connected to a base assembly including the base; A slider movably connected to the base assembly; A lifting pad bracket interconnected to the slider and interconnected to a pad shaft, wherein the pad shaft is connected to the lifting pad along a central axis; And A rod rotatably attached to a pin of the lifting pad bracket, Wherein when the base assembly moves downward, the rod rotates about the pin when engaging with the hard stop and the roller, and separates the lifting pad from the base.

2. The lifting pad raising mechanism according to claim 1, wherein the rod is in a neutral position when not engaging with the hard stop.

3. The lifting pad lifting mechanism according to claim 2, wherein, When the rod is in the neutral position, there is no relative movement between the rod and the base assembly.

4. The lifting pad lifting mechanism according to claim 1, wherein, When the base moves downward to the bottommost position, the lifting pad is separated from the base.

5. The lifting pad raising mechanism according to claim 1, wherein when the rod rotates about the pin of the lifting pad bracket, the lifting pad bracket and the slider move upward relative to the base assembly together, such that the lifting pad moves upward along the central axis relative to the base.

6. The lifting pad lifting mechanism according to claim 1, wherein, The lifting pad includes a flat top surface to support a substrate when the substrate is placed thereon.

7. The lifting pad lifting mechanism according to claim 1, wherein, The diameter of the lifting pad is smaller than the diameter of the substrate supported by the lifting pad.

8. The lifting pad raising mechanism according to claim 1, wherein the lifting pad is located in a recess in a central region of the base.

9. A component for use in a processing chamber, comprising: A base assembly including a base movably mounted on a main frame; A lifting pad configured to rest on a top surface of the base of the base and move with the base assembly; And A lifting pad raising mechanism configured to separate the lifting pad from the base, the lifting pad raising mechanism including: A lifting pad for a base, the base being mounted on a main frame; A hard stop connected to the main frame; A roller connected to the base assembly; A slider movably connected to the base assembly; A lifting pad bracket interconnected to the slider and interconnected to a pad shaft, wherein the pad shaft is connected to the lifting pad along a central axis; and A rod rotatably attached to a pin of the lifting pad bracket, Wherein when the base assembly moves downward, the rod rotates about the pin when engaging with the hard stop and the roller, and separates the lifting pad from the base.

10. The component according to claim 9, wherein the rod is in a neutral position when not engaging with the hard stop.

11. The component according to claim 10, wherein, When the rod is in the neutral position, there is no relative movement between the rod and the base assembly.

12. The component according to claim 9, wherein, When the base moves downward to the bottommost position, the lifting pad is separated from the base.

13. The assembly according to claim 9, wherein when the rod rotates about the pin of the lift pad bracket, the lift pad bracket and the slider move upward relative to the base assembly together, such that the lift pad moves upward along the central axis relative to the base.

14. The component according to claim 9, wherein, The lift pad includes a flat top surface for supporting a substrate when the substrate is placed thereon.

15. The component according to claim 9, wherein, The diameter of the lift pad is smaller than the diameter of the substrate supported by the lift pad.

16. The assembly according to claim 9, wherein the lift pad is located in a recess at the central region of the base.

17. An assembly for use in a processing chamber, comprising: means for movably mounting a lift pad for a base to a main frame, wherein the lift pad is configured to rest on a base top surface of the base; means for connecting a hard stop to the main frame; means for attaching a roller to a base assembly including the base; means for movably connecting a slider to the base; means for interconnecting a lift pad bracket to the slider and means for interconnecting the lift pad bracket to a pad shaft, wherein the pad shaft is connected to the lift pad along a central axis; and means for rotatably attaching a rod to the pin of the lift pad bracket, wherein when the base assembly moves downward, the rod rotates about the pin when engaging with the hard stop and the roller, and separates the lift pad from the base.

18. The assembly according to claim 17, wherein the rod is in a neutral position when not engaging with the hard stop.

19. The component according to claim 18, wherein, When the rod is in the neutral position, there is no relative movement between the rod and the base assembly.

20. The component according to claim 17, wherein, When the base moves downward to the bottommost position, the lift pad is separated from the base.

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