A full-bridge power module with symmetrical layout

Abstract

The present invention belongs to the technical field of power semiconductor devices, and specifically discloses a full-bridge power module with a symmetrical layout, wherein power chips constitute four bridge arms of a full-bridge circuit topology; the backs of the power chips constituting the two upper bridge arms are welded on the positive metal layer of an insulating substrate, and the fronts are connected to the corresponding metal layers of the insulating substrate through bonding wires; the backs of the power chips constituting the two lower bridge arms are welded on the two AC metal layers of the insulating substrate, and the fronts are connected to the corresponding metal layers of the insulating substrate through bonding wires, and the switch tube drive circuit thereof adopts Kelvin connection. After the switch tube chip is removed and only the diode chip is retained, the power module can realize the full-bridge rectifier circuit topology. The present invention realizes the symmetry between the two half-bridge branches and the symmetry between the two commutation circuits of the same half-bridge branch through the layout design of the copper layer, the power device and the terminal, and realizes a smaller parasitic inductance value, thereby reducing the turn-off overvoltage and switch oscillation.

Description

Technical Field

[0001] The present invention belongs to the technical field of power semiconductor devices and more specifically relates to a full-bridge power module with a symmetrical layout. Background Art

[0002] With the rapid development of modern transportation, aerospace and other fields, power electronic power modules have been widely used, and higher requirements have been put forward for the performance of power electronic power modules.

[0003] Most of the existing power modules use wire bonding technology to connect the top electrodes of the power chip through bonding wires. The geometric dimensions of the chip itself and the limitations of the bonding wire connection inside the power module will make the parasitic inductance parameters inside the module larger, which will cause the switch tube chip to withstand a large spike voltage when turned off at high speed, and produce large oscillations during the switching transient. These effects will be more obvious at faster switching speeds and switching frequencies, which limits the increase in power module switching speeds and high-frequency applications.

[0004] Therefore, for the power module, it is necessary to reduce the internal parasitic inductance value, thereby reducing the shutdown overvoltage and switching oscillation, increasing the switching speed, reducing the switching loss, and then increasing the operating frequency of the power supply system and reducing the volume of the entire power supply system. Summary of the invention

[0005] The present invention provides a full-bridge power module with a symmetrical layout, which is used to solve the technical problem that the existing full-bridge power module has a large parasitic inductance value due to its structural layout, thereby causing excessively high turn-off voltage and relatively serious switch oscillation.

[0006] The technical solution of the present invention to solve the above technical problems is as follows: a full-bridge power module with a symmetrical layout, including an insulating substrate, a power chip and a terminal, wherein the two half-bridge branches are spatially symmetrical, and the two commutation loops in the same half-bridge branch are spatially symmetrical;

[0007] The metal layer on the upper surface of the insulating substrate includes: a positive metal layer, a negative metal layer, a first AC electrode metal layer, a second AC electrode metal layer, and copper layers for driving signal connection; the first AC electrode metal layer, the negative metal layer, and the second AC electrode metal layer are all arranged on one side of the positive metal layer and arranged in sequence in the longitudinal direction; the central axis of the negative metal layer and the positive metal layer coincide, and the first AC electrode metal layer and the second AC electrode metal layer are symmetrical about the central axis;

[0008] The upper bridge arm power chips of the two half-bridge branches are arranged on both sides of the central axis of the positive metal layer, and the switch tube chips and the diode chips in the power chip on each side are arranged longitudinally, with the switch tube chip located on the outside and the diode chip located on the inside; the lower bridge arm power chips of the two half-bridge branches are arranged on the first AC electrode metal layer and the second AC electrode metal layer, and the switch tube chips and the diode chips in the power chip on each side are arranged horizontally, with the switch tube chip located on the outside and the diode chip located on the inside.

[0009] The beneficial effects of the present invention are as follows: for a full-bridge module, by symmetrically arranging the components in space, symmetry between the two half-bridge branches is achieved, and the lengths (or areas) of the two commutation circuits of the same half-bridge branch are consistent, thereby achieving symmetry between the two commutation circuits, so that the working conditions and service life of each power chip remain consistent; at the same time, the layout is used to achieve a compact arrangement of the upper and lower bridge arm power devices in the same half-bridge branch, which can effectively reduce the length of the commutation circuit, reduce the parasitic inductance value of the commutation circuit, and thus reduce the turn-off voltage spike and switch oscillation.

[0010] Based on the above technical solution, the present invention can also be improved as follows.

[0011] Furthermore, a driving metal layer and driving terminals for driving and connecting each chip are provided at four corners of the upper surface of the insulating substrate.

[0012] Furthermore, each of the switch tube chips is a silicon carbide MOSFET chip.

[0013] A further beneficial effect of the present invention is that the use of silicon carbide MOSFET chips can achieve higher switching speeds and operating temperatures.

[0014] Furthermore, each of the diode chips is a silicon carbide SBD chip.

[0015] A further beneficial effect of the present invention is that the diode chip is preferably a silicon carbide SBD (Schottky Barrier Diode) chip, which can achieve lower switching loss, higher withstand voltage and operating temperature.

[0016] Furthermore, the material of the upper surface metal layer and the lower surface metal layer of the insulating substrate is high-conductivity oxygen-free copper, and the surface of the copper layer is nickel-plated.

[0017] A further beneficial effect of the present invention is that nickel plating is performed on the surface of the copper layer of the insulating substrate, which can enhance the oxidation resistance of the surface and improve the reliability of the wire bonding connection.

[0018] Furthermore, a main power positive electrode terminal is connected to the middle of the positive metal layer, and a main power negative electrode terminal is connected to the middle of the negative metal layer;

[0019] The outer side of the first AC electrode metal layer is connected to a main power first AC electrode terminal, and the outer side of the second AC electrode metal layer is connected to a main power second AC electrode terminal;

[0020] The main power first AC electrode terminal and the main power second AC electrode terminal are symmetrical about the axis of the positive metal layer or the negative metal layer.

[0021] The further beneficial effects of the present invention are: the full-bridge power module provided by the present invention realizes complete symmetry between the two half-bridge branches through the symmetrical layout of the metal layer, the terminal and the chip setting position; in the same half-bridge branch, the placement position of the terminal, the copper layer and the switch tube chip and the diode chip realizes the consistency of the area of ​​the two commutation circuits of the same half-bridge branch, thereby realizing the symmetry of the two commutation circuits in the same half-bridge branch; the complete symmetry of the two half-bridge branches and the symmetry of the two commutation circuits of the same half-bridge branch make the working conditions (including working voltage and current, working temperature, etc.) and service life of each power chip consistent. Among them, through the compact layout of each metal layer and the power chip, a smaller commutation circuit area is realized, and the parasitic inductance value of the commutation circuit inside the power module is reduced.

[0022] The present invention also provides a symmetrically arranged full-bridge rectifier module, which adopts the internal layout structure of a symmetrically arranged full-bridge power module as described above, and removes the switch tube chip and retains the diode chip on the basis of the internal layout structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 Schematic diagram of an insulating substrate of a full-bridge power module with a symmetrical layout provided by an embodiment of the present invention;

[0024] Figure 2 is a schematic diagram of the internal structure of a full-bridge module provided by an embodiment of the present invention;

[0025] Figure 3 is a schematic diagram of the internal plan of a full-bridge module provided by an embodiment of the present invention;

[0026] Figure 4 is an external schematic diagram of a full-bridge module provided by an embodiment of the present invention;

[0027] Figure 5 Schematic diagram of the circuit topology of the full-bridge module provided by an embodiment of the present invention;

[0028] Figure 6 is a schematic diagram of the internal structure of a full-bridge rectifier module using the full-bridge module layout provided by another embodiment of the present invention;

[0029] Figure 7is a circuit topology diagram of a full-bridge rectifier module using the full-bridge module layout provided by another embodiment of the present invention;

[0030] Throughout the drawings, the same reference numerals are used to denote the same elements or structures, wherein:

[0031] 1-positive copper layer, 2-negative copper layer, 3-first AC electrode copper layer, 4-second AC electrode copper layer, 5-first half-bridge branch upper bridge arm drive signal copper layer, 6-first half-bridge branch upper bridge arm drive signal return copper layer, 7-first half-bridge branch lower bridge arm drive signal copper layer, 8-first half-bridge branch lower bridge arm drive signal return copper layer, 9-second half-bridge branch upper bridge arm drive signal copper layer, 10-second half-bridge branch upper bridge arm drive signal return copper layer, 11-first half-bridge branch The second half-bridge branch lower bridge arm drive signal copper layer, 12-the second half-bridge branch lower bridge arm drive signal return line copper layer, 13-thermistor copper layer, 14-main power positive electrode terminal, 15-main power negative electrode terminal, 16-main power first AC electrode terminal, 17-main power second AC electrode terminal, 18-first half-bridge branch upper bridge arm drive signal terminal, 19-first half-bridge branch upper bridge arm drive signal return line terminal, 20-first half-bridge branch lower bridge arm drive signal Terminal No., 21-first half-bridge branch lower bridge arm drive signal return terminal, 22-second half-bridge branch upper bridge arm drive signal terminal, 23-second half-bridge branch upper bridge arm drive signal return terminal, 24-second half-bridge branch lower bridge arm drive signal terminal, 25-second half-bridge branch lower bridge arm drive signal return terminal, 26-thermistor terminal, 27-drive resistor, 28-thermistor, 29-first half-bridge branch upper bridge arm switch tube chip, 30-first half-bridge branch upper bridge arm diode chip, 31-first half-bridge branch lower bridge arm switch tube chip, 32-first half-bridge branch lower bridge arm diode chip, 33-second half-bridge branch upper bridge arm switch tube chip, 34-second half-bridge branch upper bridge arm diode chip, 35-second half-bridge branch lower bridge arm switch tube chip, 36-second half-bridge branch lower bridge arm diode chip, 37-bonding wire (wherein, 37a~37g represent bonding wires at different positions), 38-housing. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in each embodiment of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0033] Embodiment 1

[0034] A full-bridge power module with a symmetrical layout, the full-bridge power module includes an insulating substrate, a power chip (including a switch tube chip and a diode chip), terminals and other parts; wherein the insulating substrate is divided into an upper surface metal layer, an intermediate insulating layer and a lower surface metal layer, the upper surface metal layer includes: a positive metal layer, a negative metal layer, a first AC electrode metal layer, a second AC electrode metal layer and various copper layers for driving signal connection; the first AC electrode metal layer, the negative metal layer and the second AC electrode metal layer are arranged horizontally in sequence, and all three are adjacent to the positive metal layer; the positive metal layer and the negative metal layer are symmetrical about their respective central axes, and the first AC electrode metal layer and the second AC electrode metal layer are symmetrical about the central axes of the positive metal layer and the negative metal layer.

[0035] Four groups of power chips constitute four bridge arms of the full-bridge circuit topology, namely the upper bridge arm of the first half-bridge branch, the lower bridge arm of the first half-bridge branch, the upper bridge arm of the second half-bridge branch and the lower bridge arm of the second half-bridge branch; the upper bridge arm power chip of the first half-bridge branch (including the switch tube chip and the diode chip) is longitudinally arranged on one side of the positive electrode metal layer, the switch tube chip is located on the outside, the diode chip is located on the inside, and its top electrodes are connected to the first AC electrode metal layer through bonding wires; the upper bridge arm power chip of the second half-bridge branch is longitudinally arranged on the other side of the positive electrode metal layer, the switch tube chip is located on the outside, the diode chip is located on the inside, and its top electrodes are connected to the second AC electrode metal layer through bonding wires; the lower bridge arm power chip of the first half-bridge branch is transversely arranged on the first AC electrode metal layer, the switch tube chip is located on the outside, the diode chip is located on the inside, and its top electrodes are connected to the negative electrode metal layer through bonding wires; the lower bridge arm power chip of the second half-bridge branch is transversely arranged on the second AC electrode metal layer, the switch tube chip is located on the outside, the diode chip is located on the inside, and its top electrodes are connected to the negative electrode metal layer through bonding wires.

[0036] It should be noted that the above-mentioned "outside" and "inside" are relative to the entire insulating substrate. The area close to the center of the insulating substrate is the inside, and the area close to the edge of the insulating substrate is the outside. The same applies to the "outside" and "inside" described below. In addition, the middle of the positive metal layer is connected to the main power positive electrode terminal, and the middle of the negative metal layer is connected to the main power negative electrode terminal.

[0037] For the full-bridge module, the symmetry between the two half-bridge branches is achieved by symmetrically arranging the components in space, and the lengths (or areas) of the two commutation circuits of the same half-bridge branch are consistent, achieving symmetry between the two commutation circuits, so that the working conditions and service life of each power chip remain consistent; at the same time, this layout realizes a compact arrangement of the upper and lower bridge arm power devices in the same half-bridge branch, which can effectively reduce the length of the commutation circuit, reduce the parasitic inductance value of the commutation circuit, and thus reduce the turn-off voltage spike and switching oscillation.

[0038] Among them, the symmetrical layout makes the working conditions of each power chip consistent (the voltage and current values ​​are consistent, and thus the losses on each power chip are consistent) and the service life consistent (only by ensuring the consistency of the working conditions of each power chip can the service life be guaranteed to be consistent, thereby maximizing the service life of the power chip). The reduction of the parasitic inductance value of the commutation loop is achieved through the compactness of the layout (not through the symmetry of the layout). The smaller the length (or area) of the commutation loop, the smaller the parasitic inductance value.

[0039] Preferably, the outer side of the first AC electrode metal layer is connected to the main power first AC electrode terminal, and the outer side of the second AC electrode metal layer is connected to the main power second AC electrode terminal; the main power first AC electrode terminal and the main power second AC electrode terminal are symmetrical about the axis of the positive metal layer or the negative metal layer.

[0040] Complete symmetry between the two half-bridge branches is achieved through the symmetrical layout of metal layers, terminals and chip setting positions.

[0041] It should be noted that the main power positive electrode terminal, the upper arm switch tube chip of the first half-bridge branch, the lower arm diode chip of the first half-bridge branch, the main power negative electrode terminal and the corresponding bonding wires, copper layers and other connecting parts constitute a commutation circuit of the first half-bridge branch; the main power positive electrode terminal, the upper arm diode chip of the first half-bridge branch, the lower arm switch tube chip of the first half-bridge branch, the main power negative electrode terminal and the corresponding bonding wires, copper layers and other connecting parts constitute another commutation circuit of the first half-bridge branch. The main power positive electrode terminal, the upper arm switch tube chip of the second half-bridge branch, the lower arm diode chip of the second half-bridge branch, the main power negative electrode terminal and the corresponding bonding wires, copper layers and other connecting parts constitute a commutation circuit of the second half-bridge branch; the main power positive electrode terminal, the upper arm diode chip of the second half-bridge branch, the lower arm switch tube chip of the second half-bridge branch, the main power negative electrode terminal and the corresponding bonding wires, copper layers and other connecting parts constitute another commutation circuit of the second half-bridge branch. Therefore, in the present application, the placement positions of the terminals, copper layers, switch tube chips and diode chips achieve consistency in the areas of the two commutation circuits in the same half-bridge branch, thereby achieving symmetry of the two commutation circuits in the same half-bridge branch.

[0042] The complete symmetry of the two half-bridge branches and the symmetry of the two commutation loops of the same half-bridge branch ensure that the working conditions (including working voltage and current, working temperature, etc.) and service life of each power chip remain consistent. The layout of each metal layer and power chip achieves a smaller commutation loop area and reduces the parasitic inductance of the commutation loop inside the power module.

[0043] Preferably, there are driving metal layers for driving connection on the four corners of the upper surface of the insulating substrate, which are the upper bridge arm driving signal metal layer of the first half-bridge branch, the upper bridge arm driving signal return metal layer of the first half-bridge branch, the lower bridge arm driving signal metal layer of the first half-bridge branch, the upper bridge arm driving signal metal layer of the second half-bridge branch, the upper bridge arm driving signal return metal layer of the second half-bridge branch, the lower bridge arm driving signal metal layer of the second half-bridge branch, and the lower bridge arm driving signal return metal layer of the second half-bridge branch; each driving metal layer is connected to the top electrode of the switching tube through a bonding wire, and each driving signal terminal is connected to the driving metal layer; the Kelvin connection of the driving circuit is realized through the driving metal layer, the coupling between the driving circuit and the main power circuit is reduced, and the driving stability is improved.

[0044] Preferably, the switch tube chip can be a silicon MOSFET chip, an IGBT chip, a silicon carbide MOSFET chip or a gallium nitride MOSFET chip, etc.; a silicon carbide MOSFET chip is selected to achieve higher switching speed and operating temperature.

[0045] Preferably, the diode chip is a silicon carbide SBD (Schottky Barrier Diode) chip, which can achieve lower switching loss, higher withstand voltage and operating temperature.

[0046] Preferably, the material of the upper surface metal layer and the lower surface metal layer of the insulating substrate is preferably high-conductivity oxygen-free copper. Further preferably, the surface of the copper layer of the insulating substrate is nickel-plated to enhance the surface's oxidation resistance and improve the reliability of the wire bonding connection. Preferably, the intermediate layer of the above-mentioned insulating substrate uses aluminum nitride ceramic, which has a higher thermal conductivity and is conducive to heat dissipation.

[0047] The above embodiment provides a full-bridge power module with a symmetrical layout, the purpose of which is to achieve symmetry between the two half-bridge branches and the symmetry between the two commutation loops of the same half-bridge branch, so that the working condition and service life of each power chip remain consistent; at the same time, through a compact layout, a smaller parasitic inductance value of the commutation loop is achieved, thereby reducing the turn-off voltage spike and switch oscillation. In order to more clearly illustrate the present invention, the following example is now given.

[0048] Figures 1 to 5 As shown, the structure of a full-bridge power module with a symmetrical layout provided by an embodiment of the present invention; as an example of the present invention, the number of switch tube chips and diode chips connected in parallel in each bridge arm is 1; the insulating substrate adopts a direct-bonded copper ceramic board (DBC), the corresponding metal layers are copper layers, and the middle layer adopts aluminum nitride ceramic; pin terminals are used.

[0049] like Figure 1Schematic diagram of an insulating substrate of a full-bridge power module with a symmetrical layout as shown; the copper layer on its upper surface is divided into a positive copper layer 1, a negative copper layer 2, a first AC electrode copper layer 3, a second AC electrode copper layer 4, a first half-bridge branch upper bridge arm drive signal copper layer 5, a first half-bridge branch upper bridge arm drive signal return line copper layer 6, a first half-bridge branch lower bridge arm drive signal copper layer 7, a first half-bridge branch lower bridge arm drive signal return line copper layer 8, a second half-bridge branch upper bridge arm drive signal copper layer 9, a second half-bridge branch upper bridge arm drive signal copper layer 10, a second half-bridge branch upper bridge arm drive signal copper layer 11, a second half-bridge branch upper bridge arm drive signal copper layer 12, a second half-bridge branch upper bridge arm drive signal copper layer 13, a second half-bridge branch upper bridge arm drive signal copper layer 14, a second half-bridge branch upper bridge arm drive signal copper layer 15, a first half-bridge branch upper bridge arm drive signal copper layer 16, a first half-bridge branch lower bridge arm drive signal copper layer 17, a first half-bridge branch lower bridge arm drive signal return line copper layer 18, a second half-bridge branch upper bridge arm drive signal copper layer 19, a second half-bridge branch upper bridge arm drive signal copper layer 20, a first half-bridge branch upper bridge arm drive signal copper layer 21, a first half-bridge branch upper bridge arm drive signal copper layer 22, a first half-bridge branch upper bridge arm drive signal copper layer 23, a first half-bridge branch upper bridge arm drive signal copper layer 24, a first half-bridge branch upper bridge arm drive signal copper layer 25, a first half-bridge branch upper bridge arm drive signal copper layer 26, a first half-bridge branch upper bridge arm drive signal copper layer 27, a first half-bridge branch upper bridge arm drive signal copper layer 28, a first half-bridge branch upper bridge arm drive signal copper layer 29, a first half-bridge branch upper bridge arm drive signal copper layer 30, a first half The first AC electrode copper layer 3, the negative electrode copper layer 2 and the second AC electrode copper layer 4 are arranged laterally in sequence, and all three are adjacent to the positive electrode copper layer 1; the positive electrode copper layer 1 and the negative electrode copper layer 2 are symmetrical about their respective central axes, and the first AC electrode copper layer 3 and the second AC electrode copper layer 4 are symmetrical about the central axis of the positive electrode copper layer 1 or the negative electrode copper layer 2.

[0050] like Figure 2 The internal structure diagram of the full-bridge module shown in the figure and the corresponding Figure 3 The internal plan view of the full-bridge module is shown. Four groups of power chips constitute the four bridge arms of the full-bridge circuit topology; the upper bridge arm switch tube chip 29 and the diode chip 30 of the first half-bridge branch are longitudinally arranged on one side of the positive copper layer 1, the switch tube chip 29 is located on the outside, and the diode chip 30 is located on the inside, and their top electrodes are connected to the first AC electrode copper layer 3 through bonding wires 37a and 37b respectively; the upper bridge arm switch tube chip 33 and the diode chip 34 of the second half-bridge branch are longitudinally arranged on the other side of the positive copper layer, the switch tube chip 33 is located on the outside, and the diode chip 34 is located on the inside, and their top electrodes are respectively connected to the first AC electrode copper layer 3 through bonding wires 37e and 37f. It is connected to the second AC electrode copper layer 4; the switch tube chip 31 and the diode chip 32 of the lower bridge arm of the first half-bridge branch are horizontally arranged on the first AC electrode copper layer 3, the switch tube chip 31 is located on the outside, and the diode chip 32 is located on the inside, and their top electrodes are connected to the negative copper layer 2 through bonding wires 37c and 37d respectively; the switch tube chip 35 and the diode chip 36 of the lower bridge arm of the second half-bridge branch are horizontally arranged on the second AC electrode gold-copper layer 4, the switch tube chip 35 is located on the outside, and the diode chip 36 is located on the inside, and their top electrodes are connected to the negative copper layer 2 through bonding wires 37g and 37h respectively.

[0051] A main power positive electrode terminal 14 is connected in the middle of the positive copper layer 1, a main power negative electrode terminal 15 is connected in the middle of the negative copper layer 2, a main power first AC electrode terminal 16 is connected to the outer side of the first AC electrode copper layer, and a main power second AC electrode terminal 17 is connected to the outer side of the second AC electrode copper layer; the main power first AC electrode terminal 16 and the main power second AC electrode terminal 17 are symmetrical about the axis of the positive copper layer 1 or the negative copper layer 2; in addition, each driving copper layer 5-12 is connected to a corresponding driving terminal 18-25 and a driving resistor 28 for driving the switch tube chips 29, 31, 33, and 35; the thermistor copper layer 13 is connected to a thermistor 29 and a thermistor terminal 26.

[0052] The symmetrical layout of the copper layers 1-12, terminals 14-25 and power chips 29-36 achieves complete symmetry of the two half-bridge branches.

[0053] Through the placement of the copper layers 1-4, the terminals 14 and 15, the switch tube chips 29, 31, 33, 35 and the diode chips 30, 32, 34, 36, the areas of the two commutation loops of the same half-bridge branch are made consistent, and the symmetry of the two commutation loops of the same half-bridge branch is achieved;

[0054] The complete symmetry of the two half-bridge branches and the symmetry of the two commutation loops of the same half-bridge branch ensure that the working conditions (including working voltage and current, working temperature, etc.) and service life of each switch chip 29, 31, 33, 35 remain consistent, and also ensure that the working conditions (including working voltage and current, working temperature, etc.) and service life of each diode chip 30, 32, 34, 36 remain consistent;

[0055] At the same time, through the layout of the copper layers 1-4, the terminals 14 and 15 and the power chips 29-36, a smaller commutation loop area is achieved, and the parasitic inductance value of the commutation loop inside the power module is reduced;

[0056] The source (or emitter) of each switch tube chip 29, 31, 33, and 35 adopts a Kelvin connection method to reduce the common source inductance, which effectively reduces the coupling between the drive circuit and the power circuit, thereby improving the stability of the drive signal.

[0057] like Figure 4 The external schematic diagram of the full-bridge module is shown. Each terminal 14-26 extends from the housing 38 for external circuit connection.

[0058] like Figure 5 The circuit topology diagram of the full-bridge module is shown in Figure 1. The full-bridge circuit structure is similar to Figure 1-Figure 4Correspondingly, it is composed of a main power positive electrode terminal 14, a main power negative electrode terminal 15, a main power first AC electrode terminal 16, a main power second AC electrode terminal 17, a drive terminal 18-25, a thermistor terminal 26, a power chip 29-36, a drive resistor 27, a thermistor 28, and electrical connections between them.

[0059] Embodiment 2

[0060] The power module of the first embodiment above can also realize a full-bridge rectifier circuit topology after removing the switch tube chip and retaining only the diode chip; it can also achieve the consistency of the working conditions and service life of the diode chips on the four bridge arms.

[0061] like Figure 6 and Figure 7 The full-bridge rectifier module using the full-bridge module layout is shown. Similarly, as another example of the present invention, the number of diode chips in parallel in each bridge arm is 1; the insulating substrate adopts a direct copper-clad ceramic plate (DBC), the corresponding metal layers are copper layers, and the middle layer adopts aluminum nitride ceramic; and pin terminals are used.

[0062] Figure 6 It is a schematic diagram of the internal structure of a full-bridge rectifier module with a symmetrical layout. The arrangement of the copper layer on the upper surface of the insulating substrate is the same as the previous example; the terminals only include the main power terminals 14-17 and the thermistor terminal 26; the power chip only includes the diode chips 30, 32, 34, 36.

[0063] Figure 7 This is a schematic diagram of the circuit topology of a symmetrically arranged full-bridge rectifier module. Figure 6 Correspondingly, it is composed of a main power positive electrode terminal 14, a main power negative electrode terminal 15, a main power first AC electrode terminal 16, a main power second AC electrode terminal 17, a thermistor terminal, diode chips 30, 32, 34, 36, a thermistor 28, and electrical connections therebetween.

[0064] Similarly, through the symmetrical layout of the copper layers 1-4, terminals 14-17 and the setting positions of the power chips 30, 32, 34, 36, complete symmetry of the two half-bridge branches is achieved, so that the working conditions (including working voltage and current, working temperature, etc.) and service life of each diode chip 30, 32, 34, 36 remain consistent.

[0065] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A full-bridge power module with a symmetrical layout, comprising an insulating substrate, a power chip and a terminal, characterized in that: The two half-bridge branches are spatially symmetrical, and the two commutation loops in the same half-bridge branch are spatially symmetrical; The metal layer on the upper surface of the insulating substrate includes: a positive metal layer, a negative metal layer, a first AC electrode metal layer, a second AC electrode metal layer, and copper layers for driving signal connection; the first AC electrode metal layer, the negative metal layer, and the second AC electrode metal layer are all arranged on one side of the positive metal layer and arranged in sequence in the longitudinal direction; the central axis of the negative metal layer and the positive metal layer coincide, and the first AC electrode metal layer and the second AC electrode metal layer are symmetrical about the central axis; The upper bridge arm power chips of the two half-bridge branches are arranged on both sides of the central axis of the positive metal layer, and the switch tube chips and the diode chips in the power chip on each side are arranged longitudinally, with the switch tube chip located on the outside and the diode chip located on the inside; the lower bridge arm power chips of the two half-bridge branches are arranged on the first AC electrode metal layer and the second AC electrode metal layer, and the switch tube chips and the diode chips in the power chip on each side are arranged horizontally, with the switch tube chip located on the outside and the diode chip located on the inside.

2. A full-bridge power module with a symmetrical layout according to claim 1, characterized in that: The upper surface of the insulating substrate is also provided with driving metal layers and driving terminals for driving connection of each chip at four corners.

3. A symmetrically arranged full-bridge power module according to claim 1, characterized in that: Each of the switch tube chips is a silicon carbide MOSFET chip.

4. A symmetrically arranged full-bridge power module according to claim 1, characterized in that: Each of the diode chips is a silicon carbide SBD chip.

5. A symmetrically arranged full-bridge power module according to claim 1, characterized in that: The materials of the upper surface metal layer and the lower surface metal layer of the insulating substrate are high-conductivity oxygen-free copper, and the surfaces of the copper layers are nickel-plated.

6. A full-bridge power module with a symmetrical layout according to any one of claims 1 to 5, characterized in that: The outer side of the first AC electrode metal layer is connected to a main power first AC electrode terminal, and the outer side of the second AC electrode metal layer is connected to a main power second AC electrode terminal; the main power first AC electrode terminal and the main power second AC electrode terminal are symmetrical about the axis of the positive metal layer or the negative metal layer.

7. A full-bridge rectifier module with a symmetrical layout, characterized in that: The internal layout structure of a full-bridge power module with a symmetrical layout as described in any one of claims 1 to 6 is adopted, and the switch tube chip is removed and the diode chip is retained on the basis of the internal layout structure.

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