Semiconductor process equipment and pressure control pipeline structure thereof

Abstract

The present application discloses a semiconductor process equipment and its pressure control pipeline structure, wherein the pressure control pipeline structure includes an exhaust pipeline and a gas supply pipeline, wherein: one end of the exhaust pipeline is connected to the exhaust channel of the semiconductor process equipment, and the other end of the exhaust pipeline is connected to the factory exhaust end, and the exhaust pipeline is used to discharge the process gas in the semiconductor process equipment; the gas supply pipeline is connected to the dilution gas source, and the gas outlet end of the gas supply pipeline extends into the exhaust pipeline to pass the dilution gas into the exhaust pipeline; the angle between the airflow direction of the dilution gas entering the exhaust pipeline and the airflow direction of the process gas in the exhaust pipeline is greater than or equal to 0° and less than 90°. The above scheme can prevent the gas from flowing back into the process chamber on the basis of effectively diluting the process gas.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor process equipment and a pressure control pipeline structure thereof. Background Art

[0002] In many semiconductor manufacturing processes (such as oxidation, diffusion, and annealing), it is necessary to maintain a negative pressure in the process chamber to prevent process gas leakage. At the same time, a diluent gas (such as nitrogen) needs to be introduced into the exhaust side of semiconductor process equipment to reduce the concentration of process gases discharged to the factory exhaust port to avoid safety hazards. For example, if the hydrogen concentration in the discharged process gas is too high, there is a risk of explosion.

[0003] In related technologies, the dilution gas inlet line is directly connected to the process chamber's exhaust duct. The dilution gas and process gas mix in the exhaust duct before being transported to the facility exhaust terminal via the exhaust line. In this structural layout, the dilution gas will collide with the process gas, hindering its delivery. Due to the negative pressure in the process chamber, the accumulated dilution gas and process gas can easily flow back into the process chamber, especially when the dilution gas flow rate is high. This inevitably disrupts the negative pressure environment of the process chamber. However, reducing the dilution gas flow rate makes it difficult to effectively dilute the process gas, thus posing a significant safety risk. Summary of the Invention

[0004] The present application discloses a semiconductor process equipment and a pressure control pipeline structure thereof, which can prevent gas from flowing back into the process chamber while effectively diluting the process gas.

[0005] In order to solve the above problems, this application adopts the following technical solutions:

[0006] In a first aspect, the present application provides a pressure control pipeline structure for semiconductor process equipment, the pressure control pipeline structure comprising an exhaust pipeline and a gas supply pipeline, wherein:

[0007] One end of the exhaust pipeline is connected to the exhaust channel of the semiconductor process equipment, and the other end of the exhaust pipeline is connected to the factory exhaust port. The exhaust pipeline is used to discharge the process gas in the semiconductor process equipment;

[0008] The gas supply pipeline is connected to the dilution gas source, and the gas outlet end of the gas supply pipeline extends into the exhaust pipeline to introduce dilution gas into the exhaust pipeline; the angle between the airflow direction of the dilution gas entering the exhaust pipeline and the airflow direction of the process gas in the exhaust pipeline is greater than or equal to 0° and less than 90°.

[0009] In a second aspect, the present application provides a semiconductor process equipment, which includes a process chamber and the pressure control pipeline structure described in the first aspect of the present application.

[0010] The technical solution adopted in this application can achieve the following beneficial effects:

[0011] In the pressure control pipeline structure of the semiconductor process equipment disclosed in the present application, the gas supply pipeline is set so that the angle between the airflow direction of the dilution gas entering the exhaust pipeline and the airflow direction of the process gas in the exhaust pipeline is greater than or equal to 0° and less than 90°. In this case, the dilution gas will not collide with the process gas. Even if the flow rate of the dilution gas is increased, the problem of the dilution gas obstructing the process gas and accumulating in the related art can be avoided, thereby preventing the gas from flowing back into the process chamber.

[0012] At the same time, since the dilution gas flow direction has a component in the same direction as the process gas flow direction, the dilution gas can increase the flow rate of the process gas after entering the exhaust pipeline, thereby improving the exhaust efficiency.

[0013] Compared with the related art, the pressure control pipeline structure of the present application can undoubtedly prevent the gas from flowing back into the process chamber on the basis of effectively diluting the process gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The drawings described herein are used to provide further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute improper limitations on the present application.

[0015] In the attached figure:

[0016] Figure 1 A schematic structural diagram of a semiconductor process equipment disclosed in an embodiment of the present application;

[0017] Figure 2 This is a partial structural diagram of the pressure control pipeline structure disclosed in the embodiment of this application.

[0018] Description of reference numerals:

[0019] 100-process chamber, 110-exhaust channel,

[0020] 200-exhaust pipe, 210-bend section,

[0021] 300-gas supply pipe, 310-first branch pipe, 320-second branch pipe, 321-gas outlet,

[0022] 400-pressure control device, 500-flow control device, 600-first control valve,

[0023] 700-differential pressure gauge, 800-second control valve. DETAILED DESCRIPTION

[0024] To make the purpose, technical solutions, and advantages of this application more clear, the technical solutions of this application will be clearly and completely described below in conjunction with the specific embodiments of this application and the corresponding drawings. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0025] The technical solutions disclosed in various embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0026] In order to solve the technical problem in the related art that it is difficult for semiconductor process equipment to take into account both the dilution requirements and the negative pressure requirements in the chamber when exhausting, an embodiment of the present application provides a pressure control pipeline structure of a semiconductor process equipment, which is used to maintain the negative pressure state of the process chamber during the dilution of the process gas discharged from the semiconductor process equipment.

[0027] like Figure 1 and Figure 2 As shown, the pressure control pipeline structure disclosed in the embodiment of the present application includes an exhaust pipeline 200 and an air supply pipeline 300.

[0028] in:

[0029] One end of the exhaust line 200 is connected to the exhaust channel 110 of the semiconductor process equipment, and the other end of the exhaust line 200 is connected to the factory exhaust port. The exhaust line 200 is used to exhaust process gases. Specifically, the semiconductor process equipment needs to exhaust process gases to the exhaust device at the factory exhaust port during or after the process. The process gases in the process chamber 100 are discharged through the exhaust line 200. The exhaust channel 110 of the semiconductor process equipment is connected to its process chamber 100, and the exhaust line 200 is connected to the factory exhaust port and the exhaust line 110 respectively. The process gases can then be transported to the factory exhaust port through the exhaust channel 110 and the exhaust line 200 in sequence.

[0030] Process gases are often hazardous. For example, process gases such as hydrogen, which are flammable and explosive, or other corrosive gases, require dilution during the process gas discharge to ensure that the concentration of the process gas is within a safe range. The specific type of dilution gas is not limited in this embodiment; it may be nitrogen, or a rare gas such as helium or neon.

[0031] In the related art, the dilution gas and process gas are directly mixed in the exhaust channel 110 and then transported to the factory exhaust terminal via the exhaust pipe 200. Under this structural layout, after the dilution gas enters the exhaust channel 110, it will collide with the process gas, hindering the transportation of the process gas and even making it impossible to exhaust the conductor process equipment. Moreover, the dilution gas and process gas will also accumulate in the exhaust channel 110. Because the process chamber 100 is in a negative pressure state, the gas accumulated in the exhaust channel 110 can easily flow back into the process chamber 100, especially when the dilution gas flow rate is large. This will inevitably destroy the negative pressure environment of the process chamber 100. However, if the dilution gas flow rate is reduced, it will be difficult to effectively dilute the process gas, thus posing a huge potential safety risk.

[0032] In response to the above-mentioned problems, the embodiment of the present application improves the gas supply pipeline 300.

[0033] In an embodiment of the present application, the gas supply line 300 is connected to a dilution gas source, and the gas outlet end of the gas supply line 300 extends into the exhaust line 200 to introduce dilution gas into the exhaust line 200; the angle between the airflow direction of the dilution gas entering the exhaust line 200 and the airflow direction of the process gas in the exhaust line 200 is greater than or equal to 0° and less than 90°.

[0034] Under this structural layout, the channel in the exhaust pipeline 200 located downstream of the connection between the gas supply pipeline 300 and the exhaust pipeline 200 can form a negative pressure driven by the flow of dilution gas, thereby promoting the exhaust of process gas in the exhaust pipeline 200 toward the plant service end.

[0035] The embodiment of the present application restricts the direction of the dilution gas flow entering the exhaust pipe 200, such that an angle exists between the direction of the outlet end of the exhaust pipe 200 and the direction of the process gas flow within the exhaust pipe 200, and the angle is greater than or equal to 0° and less than 90°. In this case, when the dilution gas enters the exhaust pipe 200, the flow can be divided into two components: one component in the same direction as the process gas flow, and the other component located within the cross-section of the exhaust pipe 200. Therefore, the dilution gas will not collide with the process gas, thus avoiding obstruction to the process gas discharge operation. At the same time, the dilution gas component in the same direction as the process gas flow will also merge with the process gas, thereby accelerating the flow rate of the process gas and thereby improving the discharge efficiency of the process gas.

[0036] It can be seen from the above description that in the pressure control pipeline structure of the semiconductor process equipment disclosed in the present application, by setting the gas supply pipeline 300 so that the angle between the airflow direction of the dilution gas entering the exhaust pipeline 200 and the airflow direction of the process gas in the exhaust pipeline 200 is greater than or equal to 0° and less than 90°, in this case, the dilution gas will not collide with the process gas. Even if the flow rate of the dilution gas flow is increased, the problem of the dilution gas obstructing the process gas and accumulating can be avoided as in the related art, thereby preventing the gas from flowing back into the process chamber 100.

[0037] At the same time, since the dilution gas has a component in the same direction as the process gas, the dilution gas can increase the flow rate of the process gas after entering the exhaust pipe 200, thereby improving the exhaust efficiency.

[0038] Compared with the related art, the pressure control pipeline structure of the embodiment of the present application can undoubtedly prevent the gas from flowing back into the process chamber 100 on the basis of effectively diluting the process gas.

[0039] In order to further optimize the performance of preventing gas from flowing back into the process chamber 100, as shown in FIG. Figure 1 and Figure 2 As shown, the gas supply pipeline 300 of this embodiment includes a first branch pipe 310 and at least two second branch pipes 320. The first branch pipe 310 is connected to the dilution gas source; the air inlet end of the second branch pipe 320 is connected to the first branch pipe 310, and the air outlet end of the second branch pipe 320 extends into the exhaust pipe 200 to introduce the dilution gas into the exhaust pipe 200; the flow area of ​​the exhaust pipe 200 and the first branch pipe 310 are both larger than the flow area of ​​the second branch pipe 320.

[0040] It should be understood that the “flow area” described in the embodiments of the present application refers to the cross-sectional area of ​​the gas flow at the pipeline port.

[0041] In this structural layout, because the flow areas of the exhaust pipe 200 and the first branch pipe 310 are both larger than the flow area of ​​the second branch pipe 320, when the dilution gas is transported from the first branch pipe 310 through the second branch pipe 320 to the exhaust pipe 200, the first branch pipe 310, the second branch pipe 320, and the exhaust pipe 200 can jointly form a Venturi tube mechanism, compressing the dilution gas and forming a higher-speed airflow. Based on the Venturi effect, after the high-speed dilution gas enters the exhaust pipe 200, a low-pressure area is generated near it, which adsorbs the surrounding process gas, thereby accelerating the mixing efficiency of the dilution gas and the process gas. Because some of the process gas is adsorbed, a relatively negative pressure area is formed in the area of ​​the second branch pipe 320 within the exhaust pipe 200, thereby ensuring that a pressure differential is less likely to form between the connected exhaust pipe 200 and the process chamber 100, thereby improving the performance of preventing the mixed gas from flowing back into the process chamber 100.

[0042] Since the concentration of the process gas needs to be diluted to a safe range (for example, the safe concentration of hydrogen is 4%), the safety of the exhaust operation can be ensured, and the key factor is to add a sufficient amount of diluent gas to the process gas. In the embodiment of the present application, there are at least two second branches 320. Under this structural layout, the diluent gas in the first branch 310 can be transported to the exhaust pipeline 200 through at least two second branches 320. The amount of diluent gas introduced into the exhaust pipeline 200 at the same time is the sum of the amounts introduced into all the second branches 320. Compared with the embodiment of one second branch 320, due to the limitation of air resistance, the diluent gas introduced into the exhaust pipeline 200 by the second branch 320 will have an upper limit. The embodiment of the present application with at least two second branches 320 undoubtedly increases the total amount of diluent gas introduced into the exhaust pipeline 200, thereby effectively diluting the process gas to ensure that the concentration of the process gas is within a safe range.

[0043] Of course, the embodiment of the present application does not limit the specific number of the second branch pipes 320 , which can be two, three, four, etc.

[0044] Furthermore, if Figure 2 As shown, in the embodiment of the present application, along the extension direction of the first branch pipe 310, the air inlet ends of all the second branch pipes 320 are staggeredly connected to the first branch pipe 310; along the extension direction of the exhaust pipe 200, the air outlet ends of all the second branch pipes 320 are staggeredly connected to the exhaust pipe 200.

[0045] It should be noted that in semiconductor manufacturing exhaust systems, pipes are typically small in diameter, resulting in limited installation space. With this structural layout, the connection areas of the different second branch pipes 320 with the first branch pipe 310 and with the exhaust pipe 200 are staggered. This prevents interference between the second branch pipes 320, reduces processing complexity, and facilitates production.

[0046] Among the options, Figure 2 As shown, the pipe section of the second branch pipe 320 extending into the exhaust pipe 200 in the embodiment of the present application is bent, and the direction of the gas outlet end 321 bent to the second branch pipe 320 is consistent with the extension direction of the exhaust pipe 200.

[0047] It should be understood that with this configuration, the dilution gas discharged from second branch pipe 320 is delivered in the same direction as the extension of exhaust pipe 200. This means that the dilution gas delivery direction is aligned with the delivery direction of the process gas, equivalent to a 0° angle between the dilution gas and process gas flows. This eliminates any obstruction between the two flows, and the high flow rate of dilution gas can also rapidly expel the process gas, thereby improving exhaust efficiency. Furthermore, because the dilution gas is delivered toward the facility exhaust port, it prevents the accumulation of dilution gas and process gas in exhaust pipe 200, thereby preventing backflow of the accumulated mixed gas.

[0048] like Figure 2 As shown, in an embodiment where there are multiple second branch pipes 320 , on the cross section of the exhaust pipe 200 , projections of the gas outlet ends 321 of the second branch pipes 320 of the embodiment of the present application may be staggered between two of them.

[0049] It should be understood that with this arrangement, the outlet ends 321 of the second branch pipes 320 do not overlap one another in the axial direction of the exhaust pipe 200. That is, the outlet end 321 of each second branch pipe 320 is not covered by the portion of another second branch pipe 320 extending into the exhaust pipe 200. This allows the dilution gas to be discharged from the outlet ends 321 of the second branch pipes 320 without obstruction, thereby ensuring smooth delivery of the dilution gas after mixing with the process gas. This arrangement of the second branch pipes 320 optimizes exhaust efficiency to a certain extent.

[0050] Among the options, Figure 2 As shown, the second branch pipe 320 of the embodiment of the present application can be provided with a pressure control device 400, a flow control device 500 and a first control valve 600, and the pressure control device 400, the flow control device 500 and the first control valve 600 are arranged in sequence along the conveying direction of the dilution gas.

[0051] It should be understood that the pressure control device 400 can regulate the intake pressure of the dilution gas, preventing fluctuations in the dilution gas supply from affecting the delivery of the dilution gas within the second branch pipe 320. The flow control device 500 can regulate the flow rate of the dilution gas within the second branch pipe 320 so that the dilution gas introduced into the exhaust line 200 can dilute the process gas to a safe level. The first control valve 600 can control the opening and closing of the second branch pipe 320.

[0052] During operation, first control valve 600 is opened to introduce dilution gas into exhaust line 200, preventing process gas from being directly discharged into the plant's exhaust system. Pressure control device 400 is then used to adjust the dilution gas inlet pressure to a preset value to mitigate fluctuations in the dilution gas source. Flow control device 500 adjusts the flow rate within second branch pipe 320 to a preset value, ensuring that the amount of dilution gas entering exhaust line 200 matches the exhaust volume of process gas, thereby diluting the process gas to a safe level. The amount of dilution gas entering exhaust line 200 is the sum of the amounts entering all second branch pipes 320.

[0053] The pressure control device 400 may be a pressure regulating valve, the flow control device 500 may be a float flowmeter, and the first control valve 600 may be a normally closed pneumatic valve.

[0054] In the embodiments of this application, Figure 1 As shown, the pressure control pipeline structure may further include a differential pressure gauge 700. One of the gas nozzles of the differential pressure gauge 700 is connected to the process chamber 100, and the other gas nozzle is connected to the atmosphere, so that the pressure value of the process chamber 100 can be detected in real time and monitored. Specifically, Figure 1 As shown, the differential pressure gauge 700 can be installed on the exhaust pipe 200, and the gas nozzle of the differential pressure gauge 700 is connected to the pipe section of the exhaust pipe 200 close to the exhaust channel 110. Since the exhaust pipe 200 is connected to the process chamber 100 through the exhaust channel 110, the differential pressure gauge 700 can smoothly detect the air pressure value of the process chamber 100.

[0055] In the embodiment of the present application, the specific sizes of the first branch pipe 310 and the second branch pipe 320 are not limited. Optionally, the diameter of the first branch pipe 310 is 1 inch, and the diameter of the second branch pipe 320 is 0.5 inch.

[0056] Among the options, Figure 1As shown, the flow area of ​​the exhaust pipe 200 in the embodiment of the present application can be smaller than the flow area of ​​the exhaust channel 110. In this structural layout, due to the Venturi effect, after the process gas enters the exhaust pipe 200 from the exhaust channel 110, the process gas will be compressed to form a higher-speed airflow. The high-speed process gas will also form a negative pressure area in the exhaust pipe 200. The negative pressure area formed by the process gas and the negative pressure area formed by the dilution gas will superimpose on each other, thereby further ensuring that a pressure difference is unlikely to form between the connected exhaust pipe 200 and the process chamber 100, thereby preventing the mixed gas from flowing back into the process chamber 100.

[0057] like Figure 1 As shown, the pressure control pipeline structure of the embodiment of the present application may further include a second control valve 800, which is provided on the exhaust pipeline 200 and is used to control the on-off of the exhaust pipeline 200. The second control valve 800 may be an angle valve.

[0058] In order to further optimize the anti-backflow performance of the pressure control pipeline structure, such as Figure 1 and Figure 2 As shown, the exhaust pipe 200 of the embodiment of the present application may include a bending section 210. Along the airflow direction of the process gas, the bending section 210 is arranged upstream of the connection between the exhaust pipe 200 and the second branch pipe 320. The bending section 210 is used to limit the backflow of the mixed gas formed by the process gas and the dilution gas.

[0059] It should be noted that the bending section 210 is a pipe section formed by a bending structure on the exhaust pipe 200. The embodiment of the present application does not limit the specific configuration of the bending section 210. For example, Figure 2 As shown, the bend section 210 may include multiple bends at 90° angles; alternatively, the bend section 210 may be U-shaped; alternatively, the bend section 210 may be a sawtooth-shaped bend structure. Due to the presence of the bend section 210, if the mixed gas flows back, it will collide with the pipe wall of the bend section 210, thereby restricting the backflow of the mixed gas and achieving the effect of preventing backflow.

[0060] like Figure 1 As shown, based on the aforementioned pressure control pipeline structure, an embodiment of the present application also provides a semiconductor process equipment, which includes a process chamber 100 and the pressure control pipeline structure mentioned in any of the aforementioned schemes, so that the semiconductor process equipment has the beneficial effects of any of the aforementioned schemes, which will not be repeated here.

[0061] In the embodiments of the present application, the type of semiconductor process equipment is not limited, and the type of semiconductor process equipment corresponds to the specific process link in which it is used. For example, it can be applied to related process links such as oxidation, diffusion, annealing, thin film growth, and vapor deposition.

[0062] The above embodiments of this application focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0063] The foregoing is merely an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application should all be included within the scope of the claims of the present application.

Claims

1. A pressure control pipeline structure of semiconductor process equipment, characterized in that: The pressure control pipeline structure includes an exhaust pipeline and an air supply pipeline, wherein: One end of the exhaust pipeline is connected to the exhaust channel of the semiconductor process equipment, and the other end of the exhaust pipeline is connected to the factory exhaust port. The exhaust pipeline is used to discharge the process gas in the semiconductor process equipment; The gas supply pipeline includes a first branch and a second branch, the first branch is connected to a dilution gas source; the air inlet end of the second branch is connected to the first branch, and the air outlet end of the second branch extends into the exhaust pipeline to introduce dilution gas into the exhaust pipeline; the angle between the airflow direction of the dilution gas entering the exhaust pipeline and the airflow direction of the process gas in the exhaust pipeline is greater than or equal to 0° and less than 90°; the flow area of ​​the exhaust pipeline and the first branch is greater than the flow area of ​​the second branch, so that the first branch, the second branch and the exhaust pipeline are jointly constructed into a Venturi tube mechanism.

2. The pressure control pipeline structure according to claim 1, characterized in that: The gas supply pipeline includes at least two second branch pipes.

3. The pressure control pipeline structure according to claim 2, characterized in that: Along the extension direction of the first branch pipe, the air inlet ends of all the second branch pipes are staggeredly connected to the first branch pipe; along the extension direction of the exhaust pipe, the air outlet ends of all the second branch pipes are staggeredly connected to the exhaust pipe.

4. The pressure control pipeline structure according to claim 2, characterized in that: The pipe section of the second branch pipe extending into the exhaust pipe is bent, and the direction of the gas outlet end bent to the second branch pipe is consistent with the extending direction of the exhaust pipe.

5. The pressure control pipeline structure according to claim 4, characterized in that: There are multiple second branch pipes; on the cross section of the exhaust pipeline, projections of the gas outlet ends of the second branch pipes are staggered between each other.

6. The pressure control pipeline structure according to any one of claims 2 to 5, characterized in that: The second branch pipe is provided with a pressure control device, a flow control device and a first control valve, and the pressure control device, the flow control device and the first control valve are arranged in sequence along the conveying direction of the dilution gas.

7. The pressure control pipeline structure according to any one of claims 2 to 5, characterized in that: The diameter of the first branch pipe is 1 inch, and the diameter of the second branch pipe is 0.5 inch.

8. The pressure control pipeline structure according to claim 1, characterized in that: The flow area of ​​the exhaust pipeline is smaller than the flow area of ​​the exhaust channel, and a second control valve is provided on the exhaust pipeline.

9. The pressure control pipeline structure according to claim 2, characterized in that: The exhaust pipeline includes a bent section, which is arranged upstream of the connection between the exhaust pipeline and the second branch pipe along the flow direction of the process gas. The bent section is used to limit the backflow of the mixed gas formed by the process gas and the dilution gas.

10. A semiconductor process equipment, characterized in that: The process chamber comprises a process chamber and the pressure-controlled pipeline structure according to any one of claims 1 to 9.

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