Wafer lifting column and preparation method thereof, and wafer processing equipment

Abstract

The present invention provides a wafer lifting column, which is arranged in a semiconductor base for lifting wafers. The wafer lifting column includes a metal substrate and a ceramic coating. The ceramic coating is arranged on the outer surface of the metal substrate, so that the probability of the wafer lifting column breaking is reduced and the generation of PA is reduced. That is, the metal substrate made of metal material has good conductivity and can effectively transfer static electricity. The metal substrate is easy to process, has strong formability, good toughness, and is not easy to break. The ceramic coating is wear-resistant and can solve the problem caused by excessive PA. The ceramic coating can be repeatedly processed, so that the supporting structure of the wafer at the top of the wafer lifting column can be refurbished and used. The present invention also provides a preparation method of the wafer lifting column and a wafer processing device.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a wafer lifting column and a preparation method thereof, and wafer processing equipment. Background Art

[0002] Existing semiconductor coating equipment, especially 12-inch semiconductor coating equipment, requires the use of various forms of pins to support and lift wafers. For example, during the film forming process, in order to transfer wafers between the vacuum manipulator and the heating plate, the wafer needs to be lifted and lowered smoothly on the heating plate, and the smooth lifting of the wafer needs to be driven by the pins in the lifting holes of the heating plate.

[0003] A Chinese patent with publication number CN213093186U discloses a ejector pin, a lifting mechanism and a semiconductor machine. The ejector pin includes an upper component and a lower component, one end of the upper component is threadedly connected to one end of the lower component; the upper component is a ceramic structure, the lower component is a metal structure, and the entire outer surface of the lower component is covered with a protective layer, the lower component is a pure aluminum structure, and the protective layer is an aluminum oxide layer. However, the upper component of the patent is a ceramic structure, which has the problem of easy breakage, which can easily cause wafer position displacement, process abnormalities, and even fragmentation, thereby affecting the production capacity of the machine; and the ceramic structure also has the problem of low electrostatic conductivity, which can easily cause discharge on the back of the wafer, affecting the distribution of the plasma field, thereby causing the uniformity of the film thickness to be affected. In addition, in order to achieve height adjustment, the upper component of the patent has an inner hole at one end of the upper component, and the upper component is a ceramic structure, which is more likely to break.

[0004] Therefore, it is necessary to provide a novel wafer lifting column and a preparation method thereof, and a wafer processing device to solve the above-mentioned problems existing in the prior art. Summary of the invention

[0005] The object of the present invention is to provide a wafer lifting column and a preparation method thereof, and a wafer processing device, so as to reduce the probability of the wafer lifting column breaking and reduce the generation of PA.

[0006] To achieve the above objectives, the wafer lifting column of the present invention is arranged in a semiconductor base for lifting wafers. The wafer lifting column includes a metal substrate and a ceramic coating, and the ceramic coating is arranged on the outer surface of the metal substrate.

[0007] The beneficial effect of the wafer lifting column of the present invention is that: the wafer lifting column includes a metal substrate and a ceramic coating, and the ceramic coating is arranged on the outer surface of the metal substrate, so that the probability of the wafer lifting column breaking is reduced and the generation of PA is reduced. That is, the metal substrate made of metal material has good conductivity and can effectively transfer static electricity. In addition, the metal substrate is easy to process, has strong formability, good toughness, and is not easy to break. The ceramic coating is wear-resistant and can solve the problem caused by excessive PA. In addition, the ceramic coating can be repeatedly processed, so that the supporting structure of the wafer lifting column that supports the wafer at the top can be refurbished and used.

[0008] Preferably, the ceramic coating is disposed on all outer surfaces of the metal substrate. The beneficial effect is that the wafer lifting column is prevented from being worn due to contact with the wafer and the lifting hole structure of the base, which is more conducive to reducing the generation of PA and effectively ensuring the production yield of the product wafer.

[0009] Preferably, the thickness of the ceramic coating is 0.01 mm to 1 mm. The beneficial effect is that PA generated by wear and heat diffusion can be effectively reduced.

[0010] Preferably, the thickness of the ceramic coating provided on the outer surface of the metal substrate at the upper end of the wafer lifting column is greater than the thickness of the ceramic coating provided on the remaining outer surface of the metal substrate, and the upper end is the end of the wafer lifting column supporting the wafer. The beneficial effect is that it is convenient to process the surface of the ceramic coating at the upper end of the wafer lifting column with specific characteristic structures to form a supporting structure with various characteristics required to support the wafer.

[0011] Preferably, the ceramic coating is disposed on at least part of the outer surface of the metal substrate, and the at least part of the outer surface includes the outer surface of the metal substrate located at the outer convex portion, and the outer convex portion is the portion of the wafer lifting column that rises and protrudes from the lifting hole structure of the base, and the length of the outer convex portion is 10mm-15mm. Its beneficial effect is that it can effectively avoid the PA exceeding the standard due to wear and heat diffusion during the contact between the wafer lifting column and the wafer, thereby avoiding affecting the yield of the product wafer, and the ceramic coating of the portion of the wafer lifting column that rises and protrudes from the lifting hole structure of the base is conducive to reducing static electricity or adsorption force.

[0012] Preferably, the ceramic coating on the upper end of the wafer lifting column supporting the wafer is a hemispherical structure, which has the beneficial effect of reducing the contact area between the wafer lifting column and the wafer.

[0013] Preferably, the ceramic coating at the upper end of the wafer lifting column supporting the wafer is a conical structure, the top surface of the ceramic coating at the upper end is a spherical structure, and the top surface is provided with an annular groove. The beneficial effect is that: while reducing the contact area between the wafer lifting column and the wafer, the stability of the wafer lifting column supporting the wafer can also be ensured.

[0014] Preferably, the ceramic coating at the upper end of the wafer lifting column supporting the wafer is a conical structure, and the top surface of the ceramic coating at the upper end is a spherical structure. The beneficial effect is that the stability of the wafer lifting column supporting the wafer is ensured.

[0015] Preferably, the material of the ceramic coating is any one of aluminum oxide and aluminum nitride. The beneficial effects are: aluminum oxide and aluminum nitride have good electrical conductivity and thermal conductivity, and aluminum nitride material can increase the conductivity of the wafer lifting column and conduct away the residual charge between the wafer and the lower electrode plate more quickly.

[0016] Preferably, the wafer lifting column comprises an upper component, a lower component and a height adjustment structure, and the upper component and the lower component are connected and fixed by the height adjustment structure. The beneficial effect is that the height of the wafer lifting column can be adjusted.

[0017] Preferably, the method for preparing the wafer lifting column of the present invention comprises the following steps:

[0018] S1: providing the metal substrate;

[0019] S2: forming the ceramic coating on the outer surface of the metal substrate.

[0020] The beneficial effect of the preparation method of the wafer lifting column of the present invention is that: through S1: providing the metal substrate, S2: forming the ceramic coating on the outer surface of the metal substrate, the preparation method is simple and convenient, and reduces the probability of the wafer lifting column breaking and reduces the generation of PA. That is, the metal substrate made of metal material has good conductivity and can effectively transfer static electricity. In addition, the metal substrate is easy to process, has strong formability, good toughness, and is not easy to break. The ceramic coating is wear-resistant and can solve the problem caused by excessive PA. In addition, the ceramic coating can be repeatedly processed, so that the supporting structure of the top of the wafer lifting column that supports the wafer can be refurbished and used.

[0021] Preferably, after the step of forming the ceramic coating on the outer surface of the metal substrate in step S2, the method further includes step S3: processing the ceramic coating on the upper end of the wafer lifting column to obtain a supporting structure for supporting the wafer. The beneficial effect is that the surface of the ceramic coating on the upper end of the wafer lifting column can be processed with specific characteristic structures as required to form a supporting structure with various characteristics required for supporting the wafer.

[0022] Preferably, the step of forming the ceramic coating on the outer surface of the metal substrate in step S2 includes: forming the ceramic coating on the outer surface of the metal substrate by any one of spraying and coating. The beneficial effect is that the process of forming the ceramic coating is simple and convenient.

[0023] Preferably, the wafer processing equipment of the present invention comprises a base and the wafer lifting column arranged in a cavity, the base is provided with a lifting hole structure, and the wafer lifting column is movably arranged in the lifting hole structure to lift the wafer.

[0024] The beneficial effects of the wafer processing equipment of the present invention are: the wafer processing equipment includes a base and the wafer lifting column arranged in the cavity, the base is provided with a lifting hole structure, and the wafer lifting column is movably arranged in the lifting hole structure to lift the wafer, so that the probability of the wafer lifting column breaking is reduced, the PA generation is reduced, and the yield and capacity of wafer production are guaranteed. That is, the metal matrix made of metal material has good conductivity and can effectively transfer static electricity. In addition, the metal matrix is ​​easy to process, has strong formability, good toughness, and is not easy to break. The ceramic coating is wear-resistant and can solve the problem caused by excessive PA. In addition, the ceramic coating can be repeatedly processed, so that the supporting structure of the top of the wafer lifting column that supports the wafer can be refurbished and used.

[0025] Preferably, the wafer processing equipment comprises at least one of a processing module and a loading and unloading module, and the cavity is a cavity of any one of the processing module and the loading and unloading module. The beneficial effects thereof are: wide application range and strong versatility. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a cross-sectional structural diagram of a wafer lifting column according to a first embodiment of the present invention;

[0027] Figure 2 It is a cross-sectional structural diagram of a wafer lifting column according to a second embodiment of the present invention;

[0028] Figure 3 It is a cross-sectional structural diagram of the upper end portion of a wafer lifting column according to a third embodiment of the present invention;

[0029] Figure 4is a cross-sectional structural diagram of the upper end portion of a wafer lifting column according to a fourth embodiment of the present invention;

[0030] Figure 5 It is a schematic flow chart of a method for preparing a wafer lifting column according to an embodiment of the present invention;

[0031] Figure 6 It is a cross-sectional structural diagram of a wafer processing device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0033] In the prior art, ceramic Pins or metal Pins are generally used. In the process of contact between metal Pins and wafers, due to wear and heat diffusion, it is easy to cause the problem of PA exceeding the standard, thus affecting the yield of the product wafer. PA refers to particles, microparticles and powder layers. In the wafer lifting columns or support columns of the processing module and the loading and unloading module, a large amount of metal matrix materials are used, and there is also the problem of excessive particle size (PA) due to wear and heat diffusion. Semiconductor equipment has high requirements for particle size control, and high particle size will lead to reduced wafer yield. However, ceramic Pins have the problem of easy breakage, which can easily cause wafer position deviation, process abnormality, and even fragmentation, which will affect the production capacity of the machine; and ceramic Pins also have the problem of low electrostatic conductivity, which can easily cause discharge on the back of the wafer, affecting the distribution of the plasma field, thus affecting the uniformity of the film thickness.

[0034] In order to overcome the problems existing in the prior art, the embodiments of the present invention provide a wafer lifting column and a preparation method thereof, and a wafer processing device to reduce the probability of the wafer lifting column breaking and reduce the generation of PA.

[0035] Figure 1 It is a cross-sectional structural diagram of a wafer lifting column according to a first embodiment of the present invention.

[0036] In some embodiments of the present invention, the wafer lifting column is disposed in the semiconductor base for lifting and lowering the wafer. Figure 1 The wafer lifting column 1 includes a metal substrate 11 and a ceramic coating 12. The ceramic coating 12 is arranged on the outer surface of the metal substrate 11. The metal substrate 11 made of metal material has good conductivity and can effectively transfer static electricity. The metal substrate 11 is easy to process, has strong formability, good toughness, and is not easy to break. The ceramic coating 12 is wear-resistant and can solve the problem caused by excessive PA. Moreover, the ceramic coating 12 can be repeatedly processed, so that the supporting structure of the wafer (not shown in the figure) on the top of the wafer lifting column 1 can be refurbished and used, thereby reducing the probability of breaking of the wafer lifting column 1 and reducing the generation of PA.

[0037] In some embodiments of the present invention, the thickness of the ceramic coating is 0.01 mm-1 mm, which can effectively reduce PA generated by wear and heat diffusion.

[0038] In some possible embodiments of the present invention, the thickness of the ceramic coating is 0.1 mm-0.8 mm, which can effectively reduce PA generated by wear and heat diffusion.

[0039] In some other possible embodiments of the present invention, the thickness of the ceramic coating is any one of 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 0.05 mm and 0.55 mm.

[0040] In some possible embodiments of the present invention, the thickness of the ceramic coating provided on the outer surface of the metal substrate at the upper end of the wafer lifting column is greater than the thickness of the ceramic coating provided on the remaining outer surface of the metal substrate, and the upper end is the end of the wafer lifting column that supports the wafer. It is convenient to process specific characteristic structures on the surface of the ceramic coating at the upper end of the wafer lifting column to form a supporting structure with various characteristics required to support the wafer.

[0041] In some possible embodiments of the present invention, the thickness of the ceramic coating provided on the outer surface of the metal substrate at the upper end of the wafer lifting column is a first thickness, and the thickness of the ceramic coating provided on the remaining outer surface of the metal substrate is a second thickness, and the difference between the first thickness and the second thickness is 0.1mm-0.9mm.

[0042] In the embodiment of the present invention, the upper end portion is the end portion of the wafer lifting column that supports the wafer.

[0043] In some embodiments of the present invention, reference Figure 1The entire outer surface of the metal substrate 11 is provided with the ceramic coating 12. This prevents the wafer lifting column 1 from contacting and wearing the wafer and the lifting hole structure of the base, reduces the problem of excessive PA, and effectively ensures the production yield of the product wafer.

[0044] Figure 2 It is a cross-sectional structural diagram of a wafer lifting column according to a second embodiment of the present invention.

[0045] In some other embodiments of the present invention, reference Figure 1 and Figure 2 , Figure 2 The wafer lifting column of the second embodiment shown in FIG. Figure 1 The difference of the wafer lifting column of the first embodiment shown is that: Figure 2 The ceramic coating 12 of the wafer lifting column (not shown in the figure) of the second embodiment shown is arranged on at least a portion of the outer surface of the metal base 11, and the at least portion of the outer surface includes the outer surface of the metal base 11 located at the outer protrusion 16, and the outer protrusion 16 is the part of the lifting hole structure (not shown in the figure) of the wafer lifting column 1 that rises and protrudes from the base (not shown in the figure), and the length of the outer protrusion 16 is 10mm-15mm.

[0046] Specifically, when the wafer lifting column is lifted and lowered in the lifting hole structure of the base, part of the wafer lifting column will protrude from the lifting hole structure due to the lifting. The part of the wafer lifting column protruding from the lifting hole structure is the outer protrusion. When the outer protrusion extends out of the lifting hole structure and contacts the wafer, it is easy to generate static electricity or adsorption force. The provision of a ceramic coating on the outer protrusion of the lifting hole structure of the wafer lifting column that rises and protrudes from the base is conducive to reducing static electricity or adsorption force. It can also effectively avoid the PA exceeding the standard caused by wear and heat diffusion during the contact between the wafer lifting column and the wafer, thereby avoiding affecting the yield of the product wafer.

[0047] In some possible embodiments of the present invention, the length of the outer protrusion is 11 mm-14 mm.

[0048] In some possible embodiments of the present invention, the length of the outer protrusion is any one of 11.5 mm, 12 mm, 12.5 mm, 13 mm, 13.5 mm and 14.5 mm.

[0049] In some embodiments of the present invention, reference Figure 1 The ceramic coating 12 of the upper end 13 of the wafer lifting column 1 supporting the wafer is a conical structure, and the top surface 14 of the ceramic coating 12 of the upper end 13 is a spherical structure, so that the upper end 13 of the wafer lifting column 1 supporting the wafer is a conical structure, thereby ensuring the stability of the wafer lifting column 1 in supporting the wafer.

[0050] Figure 3 It is a cross-sectional structural diagram of the upper end portion of a wafer lifting column according to a third embodiment of the present invention.

[0051] In some other embodiments of the present invention, reference Figure 1 and Figure 3 , Figure 3 The wafer lifting column of the third embodiment shown in FIG. Figure 1 The difference of the wafer lifting column of the first embodiment shown is that: Figure 3 The ceramic coating 12 of the upper end 13 of the wafer lifting column (not shown) of the third embodiment shown in the figure supporting the wafer is a conical structure, and the top surface 14 of the ceramic coating 12 of the upper end 13 is a spherical structure, and the top surface 14 is provided with an annular groove 15. That is, the upper end 13 of the wafer lifting column 1 supporting the wafer is a conical structure, which ensures the stability of the wafer lifting column 1 in supporting the wafer, and the annular groove 15 provided on the top surface 14 reduces the contact area between the wafer lifting column 1 and the wafer.

[0052] Figure 4 It is a cross-sectional structural diagram of the upper end portion of a wafer lifting column according to a fourth embodiment of the present invention.

[0053] In some other embodiments of the present invention, reference is made to Figure 1 and Figure 4 , Figure 4 The wafer lifting column of the fourth embodiment shown in FIG. Figure 1 The difference of the wafer lifting column of the first embodiment shown is that: Figure 4 The ceramic coating 12 of the upper end 13 of the wafer lifting column (not shown in the figure) supporting the wafer in the fourth embodiment shown is a hemispherical structure, that is, the upper end 13 of the wafer lifting column 1 supporting the wafer is a hemispherical structure, which reduces the contact area between the wafer lifting column 1 and the wafer.

[0054] In some embodiments of the present invention, the material of the ceramic coating is any one of aluminum oxide and aluminum nitride, and aluminum oxide and aluminum nitride have good electrical conductivity and thermal conductivity.

[0055] In some specific embodiments of the present invention, the material of the ceramic coating is aluminum nitride. The aluminum nitride material can increase the conductivity of the wafer lifting column and conduct away the residual charge between the wafer and the lower electrode plate more quickly.

[0056] In some embodiments of the present invention, the material of the metal substrate is a metal material.

[0057] In some specific embodiments of the present invention, the material of the metal substrate is any one of aluminum, copper, iron, gold, platinum and stainless steel.

[0058] In some embodiments of the present invention, the wafer lifting column includes an upper component, a lower component and a height adjustment structure, and the upper component and the lower component are connected and fixed by the height adjustment structure to adjust the height of the wafer lifting column.

[0059] In some specific embodiments of the present invention, the wafer lifting column includes an upper component and a lower component, the lower component and the upper component are cylinders, and the bottom end of the upper component and the top end of the lower component are connected and fixed by a height adjustment structure, wherein the top end of the upper component is used to contact the wafer, and the bottom end of the lower component can be detachably connected to the bracket of the lifting mechanism.

[0060] Specifically, the height adjustment structure is a threaded structure, and the height adjustment structure includes an internal thread and an external thread. The bottom end of the upper component is provided with an inner hole, and the internal thread is provided in the inner hole. The external thread is provided on the outer surface of the top end of the lower component, so that the top end of the lower component is inserted into the inner hole of the upper component and is threadedly connected thereto. Compared with the existing one-piece wafer lifting column, the wafer lifting column is convenient to change the relative position between the two components because the two components are connected by threads, so as to adjust the height of the wafer lifting column, thereby ensuring the horizontality of the wafer placement and improving the success rate of grabbing the wafer. In addition, the threaded connection has good fastness, is not easy to fall off, and can achieve the purpose of fine-tuning, has high adjustment accuracy, and is convenient to adjust.

[0061] In some embodiments of the present invention, the method for preparing the wafer lifting column comprises the following steps:

[0062] S1: providing the metal substrate;

[0063] S2: forming the ceramic coating on the outer surface of the metal substrate.

[0064] Specifically, the preparation method is simple and convenient, and reduces the probability of the wafer lifting column breaking and reduces the generation of PA. That is, the metal substrate made of metal material has good conductivity and can effectively transfer static electricity. The metal substrate is easy to process, has strong formability, good toughness, and is not easy to break. The ceramic coating is wear-resistant, which solves the problem caused by excessive PA. Moreover, the ceramic coating can be repeatedly processed, so that the supporting structure of the top of the wafer lifting column that supports the wafer can be refurbished and used.

[0065] In some embodiments of the present invention, after the step of forming the ceramic coating on the outer surface of the metal substrate in step S2, the step also includes step S3: processing the ceramic coating on the upper end of the wafer lifting column to obtain a supporting structure for supporting the wafer, so that specific characteristic structures can be processed on the surface of the ceramic coating on the upper end of the wafer lifting column as needed to form a supporting structure with various characteristics required to support the wafer.

[0066] Figure 5 The figure is a schematic flow chart of a method for preparing a wafer lifting column according to an embodiment of the present invention.

[0067] In some embodiments of the present invention, reference Figure 5 The method for preparing the wafer lifting column comprises the following steps:

[0068] S1: providing the metal substrate;

[0069] S2: forming the ceramic coating on the outer surface of the metal substrate to obtain the wafer lifting column;

[0070] S3: Processing the ceramic coating on the upper end of the wafer lifting column to obtain a supporting structure for supporting the wafer.

[0071] In some possible embodiments of the present invention, the step of forming the ceramic coating on the outer surface of the metal substrate in step S2 includes: forming the ceramic coating on the outer surface of the metal substrate by any one of spraying and coating methods, and the process of forming the ceramic coating is simple and convenient.

[0072] Figure 6 It is a cross-sectional structural diagram of a wafer processing device according to an embodiment of the present invention.

[0073] In some embodiments of the present invention, the wafer processing equipment 10 includes a base 3 and a wafer lifting column 1 arranged in a chamber 2, the base 3 is provided with a lifting hole structure 31, and the wafer lifting column 1 is movably arranged in the lifting hole structure 31 to lift the wafer 4.

[0074] Specifically, the top of the wafer lifting column 1 is used to support the wafer 4, and the bottom of the wafer lifting column 1 is detachably connected to the lifting mechanism 5 used to drive the wafer lifting column 1 to perform lifting and lowering movements, so that the probability of the wafer lifting column 1 breaking is reduced, the generation of PA is reduced, and the yield and production capacity of the wafer 4 production are guaranteed. That is, the metal substrate made of metal material has good conductivity and can effectively transfer static electricity. In addition, the metal substrate is easy to process, has strong formability, good toughness, and is not easy to break. The ceramic coating is wear-resistant, which solves the problem caused by excessive PA. In addition, the ceramic coating can be repeatedly processed, so that the supporting structure of the top of the wafer lifting column that supports the wafer can be refurbished and used. The top of the cavity 2 is also provided with an air intake mechanism 6 and a spray plate 7.

[0075] In some possible embodiments of the present invention, the wafer processing equipment includes at least one of a processing module and a loading and unloading module, and the cavity is a cavity of any one of the processing module and the loading and unloading module, which has a wide range of applications and strong versatility.

[0076] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A wafer lifting column, arranged in a semiconductor base, for lifting a wafer, characterized in that: The wafer lifting column comprises a metal substrate and a ceramic coating, wherein the ceramic coating is arranged on the outer surface of the metal substrate; The thickness of the ceramic coating provided on the outer surface of the metal substrate at the upper end of the wafer lifting column is greater than the thickness of the ceramic coating provided on the remaining outer surface of the metal substrate, and the upper end is the end of the wafer lifting column supporting the wafer; The ceramic coating at the upper end of the wafer lifting column supporting the wafer is a conical structure, the top end surface of the ceramic coating at the upper end is a spherical structure, and the top end surface is provided with an annular groove.

2. The wafer lifting column according to claim 1, characterized in that: The entire outer surface of the metal substrate is provided with the ceramic coating.

3. The wafer lifting column according to claim 1, characterized in that: The thickness of the ceramic coating is 0.01 mm-1 mm.

4. The wafer lifting column according to claim 1, characterized in that: The ceramic coating is arranged on at least part of the outer surface of the metal substrate, and the at least part of the outer surface includes the outer surface of the metal substrate located at the outer protrusion, and the outer protrusion is the part of the lifting hole structure of the wafer lifting column that rises and protrudes from the base, and the length of the outer protrusion is 10mm-15mm.

5. The wafer lifting column according to claim 1, characterized in that: The ceramic coating on the upper end of the wafer lifting column supporting the wafer is a hemispherical structure.

6. The wafer lifting column according to claim 1, characterized in that: The ceramic coating at the upper end of the wafer lifting column supporting the wafer is a conical structure, and the top end surface of the ceramic coating at the upper end is a spherical structure.

7. The wafer lifting column according to claim 1, characterized in that: The material of the ceramic coating is any one of aluminum oxide and aluminum nitride.

8. The wafer lifting column according to claim 1, characterized in that: The wafer lifting column comprises an upper component, a lower component and a height adjustment structure, and the upper component and the lower component are connected and fixed by the height adjustment structure.

9. The method for preparing a wafer lifting column according to any one of claims 1 to 8, characterized in that: The following steps are involved: S1: providing the metal substrate; S2: forming the ceramic coating on the outer surface of the metal substrate.

10. The method for preparing a wafer lifting column according to claim 9, characterized in that: After the step of forming the ceramic coating on the outer surface of the metal substrate in step S2, the step further includes: S3: Processing the ceramic coating on the upper end of the wafer lifting column to obtain a supporting structure for supporting the wafer.

11. The method for preparing a wafer lifting column according to claim 9, characterized in that: The step of forming the ceramic coating on the outer surface of the metal substrate in step S2 includes: The ceramic coating is formed on the outer surface of the metal substrate by any one of a spraying method and a coating method.

12. A wafer processing device, characterized in that: It comprises a base arranged in a cavity and a wafer lifting column as described in any one of claims 1 to 8, wherein the base is provided with a lifting hole structure, and the wafer lifting column is movably arranged in the lifting hole structure to lift the wafer.

13. The wafer processing equipment according to claim 12, characterized in that: The wafer processing equipment includes at least one of a processing module and a loading and unloading module, and the cavity is a cavity of any one of the processing module and the loading and unloading module.

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