Wafer support post and wafer processing equipment

Abstract

The present invention provides a wafer support post disposed within a semiconductor pedestal for supporting a wafer. It includes a support post body, and at least one recessed portion is provided on the outer surface of the support post body. The recessed portion is recessed inward relative to the outer surface of the support post body. The recessed portion is disposed on the side wall of the support post body, and the top of the recessed portion is connected to the top end portion of the support post body, and the bottom of the recessed portion is connected to the bottom end portion of the support post body. This reduces the area of the top end portion of the support post body, minimizing the electrostatic force or other adsorption force between the wafer support post and the wafer during the process, greatly reducing the risk of the wafer support post coming out of the hole, and creating a gap between the wafer support post and the pedestal hole, thereby reducing the risk of the wafer support post coming out of the hole due to gas thermal expansion in the pedestal hole and reducing the risk of the wafer support post getting stuck in the pedestal hole. The present invention also provides a wafer processing device.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to a wafer support post and a wafer processing device. Background Art

[0002] In existing semiconductor coating equipment, especially in 12-inch semiconductor coating equipment, due to the advantages of high thermal efficiency and low cost of aluminum heating plates, aluminum heating plates still play a leading role in current semiconductor coating equipment. During the process, the surface of the heating plate needs to be evenly distributed with supports to support the wafer, so as to keep the wafer horizontal and ensure the uniformity of the deposition film thickness on the wafer surface and the process stability.

[0003] Chinese Patent with Publication No. CN203983243U discloses a wafer ceramic post used in a semiconductor coating equipment. A certain number of pin holes are evenly distributed on different circumferences of the convex surface of the heating plate. A ceramic cylinder seat with a hole in the center is embedded in the pin holes on the heating plate, and the lower bottom surface of the ceramic cylinder seat is matched with the bottom surface of the pin hole on the heating plate. The upper surface of the ceramic cylinder seat is flush with the convex surface of the heating plate. The upper end part of the ceramic post is a hemispherical structure, and the top surface is a spherical structure; the lower part of the ceramic post is a cylindrical structure, maintaining a certain straightness. However, this patent has the following problems:

[0004] (1) During the process, there is an electrostatic force or other adsorption force between the wafer and the ceramic post. If the electrostatic force or other adsorption force between the wafer and the ceramic post is too large, the ceramic post will be adsorbed and detached from the base hole, resulting in the wafer position deviation, process abnormality, and even the phenomenon of fragmentation;

[0005] (2) The ceramic post will be detached from the pin hole due to gas thermal expansion in the pin hole;

[0006] (3) After one or more process cycles, the ceramic post will be stuck due to problems such as thin film precipitation, solid material thermal diffusion, and the growth of the fluoride layer of the aluminum matrix material.

[0007] Therefore, it is necessary to provide a new type of wafer support post and wafer processing device to solve the above problems existing in the prior art. Summary of the Invention

[0008] The purpose of the present invention is to provide a wafer support post and a wafer processing device to reduce the risk of the wafer support post being detached from the support post hole of the base, and to reduce the risk of the wafer support post being stuck in the support post hole of the base.

[0009] To achieve the above object, the wafer support pillar of the present invention is disposed within a semiconductor base for supporting a wafer. The wafer support pillar includes a support pillar body, and at least one recessed portion is provided on the outer surface of the support pillar body. The recessed portion is recessed inward relative to the outer surface of the support pillar body. The recessed portion is provided on the side wall of the support pillar body, and the top of the recessed portion is connected to the top end portion of the support pillar body, and the bottom of the recessed portion is connected to the bottom end portion of the support pillar body.

[0010] The beneficial effects of the wafer support pillar of the present invention are as follows: By the recessed portion being recessed inward relative to the outer surface of the support pillar body, the recessed portion is provided on the side wall of the support pillar body, and the top of the recessed portion is connected to the top end portion of the support pillar body, that is, the area of the top end portion of the support pillar body is reduced, thereby reducing the contact area between the wafer support pillar and the wafer, so that the electrostatic force or other adsorption force between the wafer support pillar and the wafer during the process is minimized, greatly reducing the risk of the wafer support pillar coming out of the support pillar hole of the base; By the recessed portion being provided on the side wall of the support pillar body, the top of the recessed portion is connected to the top end portion of the support pillar body, and the bottom of the recessed portion is connected to the bottom end portion of the support pillar body, the entire column body of the support pillar body is recessed inward as a whole from the top end portion to the bottom end portion relative to the outer surface of the support pillar body, so that there is a gap between the wafer support pillar and the support pillar hole of the base, so that the gas in the support pillar hole can be discharged from this gap, reducing the risk of the wafer support pillar coming out of the support pillar hole of the base due to gas thermal expansion, and there is a gap between the wafer support pillar and the support pillar hole of the base, which can greatly reduce the risk of jamming of the wafer support pillar after one or more process cycles due to film deposition, thermal diffusion of solid materials, and growth of the fluoride layer of the aluminum matrix material.

[0011] Preferably, the radial length of the recessed portion recessed inward relative to the outer surface of the support pillar body gradually decreases from the top end portion of the support pillar body towards the bottom end portion of the support pillar body. The beneficial effect is that it ensures that the electrostatic force or other adsorption force between the wafer support pillar and the wafer during the process is minimized, and while ensuring the reduction of the risk of the wafer support pillar coming out of the support pillar hole of the base due to gas thermal expansion, it can also ensure that the wafer support pillar has sufficient weight to overcome the upward impact force generated by gas thermal expansion in the support pillar hole of the base, thereby greatly reducing the risk of the wafer support pillar coming out of the support pillar hole of the base.

[0012] Preferably, the surface of the recessed portion is any one of a plane and a curved surface.

[0013] Preferably, the recessed portion includes a first recessed portion and a second recessed portion. The first recessed portion is disposed at the upper part of the support column body, and the second recessed portion is disposed at the lower part of the support column body. The first recessed portion and the second recessed portion are connected by a stepped portion. The radial length of the first recessed portion recessed inward relative to the outer surface of the support column body is a first radial length, and the radial length of the second recessed portion recessed inward relative to the outer surface of the support column body is a second radial length. The first radial length is greater than the second radial length. The beneficial effect is that: it ensures that the electrostatic force or other adsorption force between the wafer support column and the wafer during the process is minimized, and while ensuring the reduction of the risk that the wafer support column is disengaged from the support column hole of the base due to gas thermal expansion in the support column hole of the base, it can also ensure that the wafer support column has sufficient weight to overcome the upward impact force generated by gas thermal expansion in the support column hole of the base, thereby greatly reducing the risk that the wafer support column is disengaged from the support column hole of the base.

[0014] More preferably, the difference between the first radial length and the second radial length is 0.2 mm - 1 mm. The beneficial effect is that: it ensures that the electrostatic force or other adsorption force between the wafer support column and the wafer during the process is minimized, and while ensuring the reduction of the risk that the wafer support column is disengaged from the support column hole of the base due to gas thermal expansion in the support column hole of the base, it can also ensure that the wafer support column has sufficient weight to overcome the upward impact force generated by gas thermal expansion in the support column hole of the base, thereby greatly reducing the risk that the wafer support column is disengaged from the support column hole of the base.

[0015] Preferably, the radial length of the recessed portion recessed inward relative to the outer surface of the support column body is 0.5 mm - 1 mm. The beneficial effect is that: it ensures that the electrostatic force or other adsorption force between the wafer support column and the wafer during the process is minimized, and while ensuring a gap between the wafer support column and the support column hole of the base, it does not cause the recessed portion to recess inward too much, resulting in the weight of the wafer support column being reduced to the extent that its own weight is insufficient to overcome the upward impact force generated by gas thermal expansion in the support column hole of the base, thereby greatly reducing the risk that the wafer support column is disengaged from the support column hole of the base.

[0016] Preferably, the difference between the maximum radial length of the recessed portion recessed inward relative to the outer surface of the support column body and the minimum radial length of the recessed portion recessed inward relative to the outer surface of the support column body is not greater than 0.5 mm.

[0017] Preferably, there are N recessed portions, where N is 2 or a multiple of 2, and the recessed portions are symmetrically arranged in pairs on the side wall of the support post body. The beneficial effect is that it is beneficial to improve the stability of the wafer support post in supporting the wafer and ensure that the wafer does not tilt.

[0018] Preferably, the support post body is any one of a cylindrical structure and a spherical structure.

[0019] Preferably, the upper end portion of the support post body is any one of a hemispherical structure and a conical structure. Preferably, the bottom end portion of the support post body is any one of a curved surface structure and a flat surface structure.

[0020] Preferably, the material of the support post body is at least any one of a ceramic material, a sapphire glass material, and a metal material.

[0021] Preferably, the wafer support post includes an upper component, a lower component, and a height adjustment structure, and the upper component and the lower component are connected and fixed through the height adjustment structure. The beneficial effect is that it can realize the adjustment of the height of the wafer support post.

[0022] Preferably, the wafer processing equipment of the present invention includes a base disposed in a cavity and the wafer support post, and the base is provided with a mounting hole structure, and the wafer support post is disposed in the mounting hole structure.

[0023] The beneficial effect of the wafer processing equipment of the present invention is that through the wafer processing equipment including a base disposed in a cavity and the wafer support post, and the base is provided with a mounting hole structure, and the wafer support post is disposed in the mounting hole structure, the risk of the wafer support post coming out of the mounting hole structure of the base is reduced, and the risk of the wafer support post getting stuck in the mounting hole structure of the base is reduced.

[0024] Preferably, the wafer processing equipment includes at least one of a processing module and a loading and unloading module, and the cavity is the cavity of any one of the processing module and the loading and unloading module. The beneficial effect is that it has a wide application range and strong versatility. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic structural diagram of the wafer support post according to the first embodiment of the present invention;

[0026] Figure 2 It is a front view structural diagram of the wafer support post according to the second embodiment of the present invention;

[0027] Figure 3 is Figure 2 a side view structural diagram of the wafer support post shown;

[0028] Figure 4 The front view structural schematic diagram of the wafer support pillar according to the third embodiment of the present invention;

[0029] Figure 5 is Figure 4 The side view structural schematic diagram of the wafer support pillar shown;

[0030] Figure 6 The structural schematic diagram of the wafer support pillar according to the fourth embodiment of the present invention;

[0031] Figure 7 The structural schematic diagram of the wafer support pillar according to the fifth embodiment of the present invention;

[0032] Figure 8 The sectional view structural diagram of the wafer processing equipment according to the embodiment of the present invention. Specific embodiments

[0033] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without making creative efforts shall fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings as understood by those of ordinary skill in the art in the field to which the present invention belongs. The words such as "including" used herein mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects.

[0034] To overcome the problems existing in the prior art, the embodiments of the present invention provide a wafer support pillar and a wafer processing equipment to reduce the risk of the wafer support pillar coming out of the support pillar hole of the base and reduce the risk of the wafer support pillar getting stuck in the support pillar hole of the base.

[0035] Figure 1 The structural schematic diagram of the wafer support pillar according to the first embodiment of the present invention.

[0036] In some embodiments of the present invention, the wafer support pillar is disposed in a semiconductor base for supporting a wafer. Refer to Figure 1 , the wafer support pillar includes a support pillar body 1, at least one recessed portion 2 is provided on the outer surface of the support pillar body 1, the recessed portion 2 is recessed inward relative to the outer surface of the support pillar body 1, the recessed portion 2 is disposed on the side wall of the support pillar body 1, and the top 21 of the recessed portion 2 is connected to the top end portion 11 of the support pillar body 1, and the bottom 22 of the recessed portion 2 is connected to the bottom end portion 12 of the support pillar body 1.

[0037] Specifically, by the recess being recessed inward relative to the outer surface of the support post body, the recess is provided on the side wall of the support post body, and the top of the recess is connected to the top end of the support post body, that is, the area of the top end of the support post body is reduced, thereby reducing the contact area between the wafer support post and the wafer, so that the electrostatic force or other adsorption force between the wafer support post and the wafer during the process is minimized, greatly reducing the risk of the wafer support post coming out of the support post hole of the base; by the recess being provided on the side wall of the support post body, and the top of the recess is connected to the top end of the support post body, and the bottom of the recess is connected to the bottom end of the support post body, the entire column body of the support post body is recessed inward from the top end to the bottom end relative to the outer surface of the support post body, so that there is a gap between the wafer support post and the support post hole of the base, so that the gas in the support post hole can be discharged from this gap, reducing the risk of the wafer support post coming out of the support post hole of the base due to gas thermal expansion, and there is a gap between the wafer support post and the support post hole of the base, which can greatly reduce the risk of jamming of the wafer support post after one or more process cycles due to film deposition, thermal diffusion of solid materials, and growth of the fluorinated layer of the aluminum matrix material.

[0038] In some embodiments of the present invention, the surface of the recess is any one of a plane and a curved surface, specifically set according to the reduction process.

[0039] In some embodiments of the present invention, the radial length of the recess recessed inward relative to the outer surface of the support post body is 0.5 mm - 1 mm. To ensure that the electrostatic force or other adsorption force between the wafer support post and the wafer during the process is minimized, and while ensuring that there is a gap between the wafer support post and the support post hole of the base, it will not cause the recess to be recessed inward too much, resulting in the weight of the wafer support post being reduced to the point where its own weight is not sufficient to overcome the upward impact force generated by gas thermal expansion in the support post hole of the base, thereby greatly reducing the risk of the wafer support post coming out of the support post hole of the base. Moreover, compared with a wafer support post whose radial length, that is, diameter, is directly reduced by a certain proportion, the wafer support post formed by cutting or chiseling part of the side wall of the support post body to form the recess has a relatively small reduction in its own weight, and is more likely to avoid the phenomenon that the weight of the wafer support post itself is not sufficient to overcome the upward impact force generated by gas thermal expansion in the support post hole of the base, thereby reducing the risk of the wafer support post coming out of the support post hole of the base.

[0040] In the embodiments of the present invention, the radial direction is the direction along the diameter of the support column body, that is, the direction perpendicular to the height of the support column body. The radial length of the recessed portion recessed inward relative to the outer surface of the support column body is the length of the recessed portion recessed inward relative to the outer surface of the support column body in the radial direction.

[0041] In some specific embodiments of the present invention, referring to Figure 1 , the surface of the recessed portion 2 is a plane, and the radial length of the recessed portion recessed inward relative to the outer surface of the support column body is equal everywhere. The value range of this radial length is 0.5 mm - 1 mm.

[0042] In some possible embodiments of the present invention, the surface of the recessed portion is a plane, and the radial length of the recessed portion recessed inward relative to the outer surface of the support column body is equal everywhere. The value range of this radial length is 0.6 mm - 0.8 mm.

[0043] In some other possible embodiments of the present invention, the surface of the recessed portion is a plane, and the radial length of the recessed portion recessed inward relative to the outer surface of the support column body is equal everywhere. The value of this radial length is any one of 0.7 mm, 0.75 mm, 0.85 mm, 0.9 mm, 0.95 mm, 0.55 mm, and 0.65 mm.

[0044] In some embodiments of the present invention, the radial length of the recessed portion recessed inward relative to the outer surface of the support column body gradually decreases from the top end of the support column body towards the bottom end of the support column body. This ensures that the electrostatic force or other adsorption force between the wafer support column and the wafer during the process is minimized, and while ensuring the reduction of the risk that the wafer support column is disengaged from the support column hole of the base due to gas thermal expansion in the support column hole of the base, it can also ensure that the wafer support column has sufficient weight to overcome the upward impact force generated by gas thermal expansion in the support column hole of the base, thereby greatly reducing the risk that the wafer support column is disengaged from the support column hole of the base.

[0045] In some embodiments of the present invention, the difference between the maximum radial length of the recessed portion recessed inward relative to the outer surface of the support post body and the minimum radial length of the recessed portion recessed inward relative to the outer surface of the support post body is not greater than 0.5 mm. That is, when the surface of the recessed portion is a curved surface, or the radial length of the recessed portion recessed inward relative to the outer surface of the support post body gradually decreases or gradually increases from the top end portion of the support post body towards the bottom end portion of the support post body, the radial lengths of the recessed portion recessed inward relative to the outer surface of the support post body at various locations are not the same. Then, the value range of the radial length of the recessed portion recessed inward relative to the outer surface of the support post body at various locations is 0.5 mm - 1 mm, and the difference between the maximum radial length of the recessed portion recessed inward relative to the outer surface of the support post body and the minimum radial length of the recessed portion recessed inward relative to the outer surface of the support post body is not greater than 0.5 mm.

[0046] In some other possible embodiments of the present invention, the difference between the maximum radial length of the recessed portion recessed inward relative to the outer surface of the support post body and the minimum radial length of the recessed portion recessed inward relative to the outer surface of the support post body is 0.05 mm - 0.45 mm.

[0047] In some other possible embodiments of the present invention, the difference between the maximum radial length of the recessed portion recessed inward relative to the outer surface of the support post body and the minimum radial length of the recessed portion recessed inward relative to the outer surface of the support post body is any one of 0.01 mm, 0.1 mm, 0.15 mm, 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, and 0.4 mm.

[0048] Figure 2 It is a front view structural schematic diagram of the wafer support post of the second embodiment of the present invention; Figure 3 is Figure 2 the side view structural schematic diagram of the wafer support post shown.

[0049] In some specific embodiments of the present invention, referring to Figure 2 and Figure 3, the radial length of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 gradually decreases from the top end portion 11 of the support column body 1 toward the bottom end portion 12 of the support column body 1. And the surface of the recessed portion 2 is a curved surface, the radial lengths of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 at various positions are not equal, the minimum radial length of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 is 0.5 mm, the maximum radial length of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 is 1 mm, and the difference between the maximum radial length of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 and the minimum radial length of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 is 0.5 mm.

[0050] Figure 4 is the front view structural schematic diagram of the wafer support column according to the third embodiment of the present invention; Figure 5 is Figure 4 the side view structural schematic diagram of the wafer support column shown.

[0051] In some other embodiments of the present invention, referring to Figure 4 and Figure 5 , the radial length of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 gradually increases from the top end portion 11 of the support column body 1 toward the bottom end portion 12 of the support column body 1. And the surface of the recessed portion 2 is a curved surface, the radial lengths of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 at various positions are not equal, the minimum radial length of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 is 0.7 mm, the maximum radial length of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 is 0.95 mm, and the difference between the maximum radial length of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 and the minimum radial length of the recessed portion 2 recessed inward relative to the outer surface of the support column body 1 is 0.25 mm.

[0052] In still some other embodiments of the present invention, the surface of the recessed portion is a plane, and the radial length of the recessed portion recessed inward relative to the outer surface of the support column body gradually decreases or gradually increases from the top end portion of the support column body toward the bottom end portion of the support column body. The radial lengths of the recessed portion recessed inward relative to the outer surface of the support column body at various positions are not equal, and the difference between the maximum radial length of the recessed portion recessed inward relative to the outer surface of the support column body and the minimum radial length of the recessed portion recessed inward relative to the outer surface of the support column body is not more than 0.5 mm.

[0053] Figure 6 is the structural schematic diagram of the wafer support column according to the fourth embodiment of the present invention.

[0054] In some embodiments of the present invention, with reference to Figure 6 , the recessed part (not marked in the figure) includes a first recessed part 210 and a second recessed part 220. The first recessed part 210 is arranged at the upper part of the support column body 1, the second recessed part 220 is arranged at the lower part of the support column body 1, and the first recessed part 210 and the second recessed part 220 are connected by a stepped part 230. The radial length of the first recessed part 210 recessed inward relative to the outer surface of the support column body 1 is a first radial length, and the radial length of the second recessed part 220 recessed inward relative to the outer surface of the support column body 1 is a second radial length. The first radial length is greater than the second radial length.

[0055] Specifically, the top 211 of the first recessed part 210 is connected to the top end 11 of the support column body 1, and the bottom 221 of the second recessed part 220 is connected to the bottom end 12 of the support column body 1. Ensure that the electrostatic force or other adsorption force between the wafer support column and the wafer during the process is minimized, and while ensuring the reduction of the risk that the wafer support column escapes from the support column hole of the base due to the thermal expansion of the gas in the support column hole of the base, it can also ensure that the wafer support column has sufficient weight to overcome the upward impact force generated by the thermal expansion of the gas in the support column hole of the base, thereby greatly reducing the risk that the wafer support column escapes from the support column hole of the base.

[0056] In an embodiment of the present invention, the first radial length is the maximum length of the first recessed part recessed inward relative to the outer surface of the support column body along the radial direction, and the second radial length is the maximum length of the second recessed part recessed inward relative to the outer surface of the support column body along the radial direction.

[0057] Specifically, the surface of the first recessed part is a plane, and the radial length of the first recessed part recessed inward relative to the outer surface of the support column body is equal everywhere and is a fixed value, and this fixed value is the first radial length. The surface of the first recessed part is a plane, and the radial length of the recessed part recessed inward relative to the outer surface of the support column body gradually decreases or gradually increases from the top end of the support column body to the bottom end of the support column body, or the surface of the first recessed part is a curved surface, then the lengths of the first recessed part recessed inward relative to the outer surface of the support column body at each place are not equal, and the first radial length is the maximum length of the first recessed part recessed inward relative to the outer surface of the support column body. The specific definition of the second radial length is the same as the specific definition of the first radial length, and will not be elaborated here.

[0058] In some possible embodiments of the present invention, the difference between the first radial length and the second radial length is 0.2 mm - 1 mm. This ensures that the electrostatic force or other adsorption force between the wafer support pillar and the wafer during the process is minimized, and while reducing the risk of the wafer support pillar disengaging from the support pillar hole of the base due to gas thermal expansion in the support pillar hole of the base, it can also ensure that the wafer support pillar has sufficient weight to overcome the upward impact force generated by gas thermal expansion in the support pillar hole of the base, thereby greatly reducing the risk of the wafer support pillar disengaging from the support pillar hole of the base.

[0059] In other possible embodiments of the present invention, the difference between the first radial length and the second radial length is 0.2 mm - 0.5 mm.

[0060] In still other possible embodiments of the present invention, the difference between the first radial length and the second radial length is any one of 0.3 mm, 0.35 mm, 0.4 mm, 0.45 mm, 0.6 mm, 0.7 mm, 0.8 mm, and 0.9 mm.

[0061] In some specific embodiments of the present invention, referring to Figure 6 , the surfaces of the first recess 210 and the second recess 220 are both flat, and the difference between the first radial length of the first recess 210 and the second radial length of the second recess 220 is 0.2 - 1 mm.

[0062] In other specific embodiments of the present invention, the surfaces of the first recess and the second recess are both curved surfaces, and the difference between the first radial length of the first recess and the second radial length of the second recess is 0.2 - 1 mm. That is, the difference between the maximum radial length by which the first recess is recessed inward relative to the outer surface of the support pillar body and the maximum radial length by which the second recess is recessed inward relative to the outer surface of the support pillar body is 0.2 - 1 mm.

[0063] In some embodiments of the present invention, there are N recesses, where N is 2 or a multiple of 2, and the recesses are symmetrically arranged in pairs on the side wall of the support pillar body, which is beneficial to improving the stability of the wafer support pillar in supporting the wafer and ensuring that the wafer does not tilt.

[0064] Figure 7 It is a schematic structural diagram of the wafer support pillar according to the fifth embodiment of the present invention.

[0065] In some specific embodiments of the present invention, referring to Figures 2 - 5 and Figure 7, there are 2 of the recessed parts 2, and the recessed parts 2 are symmetrically arranged on the side wall of the support column body 1, which is beneficial to improving the stability of the wafer support column for supporting the wafer and ensuring that the wafer will not tilt.

[0066] In some embodiments of the present invention, the support column body is any one of a cylindrical structure and a spherical structure.

[0067] In some embodiments of the present invention, the upper end portion of the support column body is any one of a hemispherical structure and a conical structure.

[0068] In an embodiment of the present invention, the upper end portion is the end portion of the wafer support column for supporting the wafer.

[0069] In some embodiments of the present invention, the bottom end portion of the support column body is any one of a curved surface structure and a planar structure.

[0070] In some specific embodiments of the present invention, refer to Figures 1 - 5 , the upper end portion of the support column body 1 is a hemispherical structure, and the bottom end portion of the support column body 1 is a planar structure.

[0071] In some other specific embodiments of the present invention, refer to Figure 6 , the upper end portion of the support column body 1 is a hemispherical structure, and the bottom end portion of the support column body 1 is a curved surface structure.

[0072] In some other specific embodiments of the present invention, refer to Figure 7 , the upper end portion of the support column body 1 is a hemispherical structure, the bottom end portion of the support column body 1 is a planar structure, and a protruding portion 13 is further provided at the edge of the bottom end portion of the support column body 1.

[0073] In some other possible embodiments of the present invention, the support column body is provided with an exhaust hole, and the exhaust hole penetrates through the support column body along the axial direction of the support column body, that is, the exhaust hole penetrates from the top end portion to the bottom end portion of the support column body, so that the gas trapped in the hole can be discharged through the exhaust hole. The axial direction is the direction perpendicular to the radial direction.

[0074] In some embodiments of the present invention, the material of the support column body is at least one of a ceramic material, a sapphire glass material, and a metal material.

[0075] In some specific embodiments of the present invention, the material of the support column body is sapphire glass. Sapphire glass (SAPPHIRE CRYSTAL) generally refers to synthetic sapphire, the main component of which is alumina (Al2O3). It has good abrasion resistance. Gem-quality sapphire can be easily and inexpensively produced in the laboratory, and its chemical composition and physical properties are the same as those of natural sapphire.

[0076] In other specific embodiments of the present invention, the material of the support column body is a metal alloy material, such as tungsten-titanium alloy, which has good abrasion resistance.

[0077] In still other specific embodiments of the present invention, the material of the support column body is a ceramic material and a metal material. That is, the metal matrix is made of a metal material, and then a ceramic coating is sprayed on the outer surface of the metal matrix. The metal matrix made of the metal material has good electrical conductivity and can effectively transfer away static electricity. Moreover, the metal matrix is easy to process, has strong formability, good toughness, and is not easy to break. The ceramic coating is wear-resistant and can solve the problem caused by excessive PA. Moreover, the ceramic coating can be processed repeatedly, and the support structure for supporting the wafer at the top can be refurbished and used, so that the probability of the wafer support column breaking is reduced, and the generation of PA is reduced. Specifically, the material of the ceramic coating is any one of alumina and aluminum nitride. Alumina and aluminum nitride have good electrical conductivity and thermal conductivity. The aluminum nitride material can increase the electrical conductivity of the wafer support column and conduct away the residual charge between the wafer and the lower electrode plate faster.

[0078] In some embodiments of the present invention, the wafer support column includes an upper component, a lower component, and a height adjustment structure. The upper component and the lower component are connected and fixed through the height adjustment structure, and the beneficial effect is that: the height of the wafer support column can be adjusted.

[0079] In some specific embodiments of the present invention, the wafer support column includes an upper component and a lower component. The lower component and the upper component are cylinders, and the lower end of the upper component and the upper end of the lower component are connected and fixed through a height adjustment structure. Among them, the top end of the upper component is used to contact the wafer, and the bottom end of the lower component is abutted against the bottom of the support column hole of the base.

[0080] Specifically, the height adjustment structure is a threaded structure, which includes an internal thread and an external thread. An inner hole is provided at the lower end of the upper component, and the internal thread is provided in the inner hole. The external thread is provided on the outer surface of the upper end of the lower component. The upper end of the lower component can be inserted into the inner hole of the upper component and threadedly connected thereto. Compared with the existing integrally formed wafer support column, since the two components of the wafer support column are threadedly connected, it is convenient to change the relative position between the two components, thereby adjusting the height of the wafer support column, ensuring the levelness of the wafer placement, and improving the uniformity of the thickness of the deposition film on the wafer surface. Moreover, the threaded connection has good tightness, is not easy to fall off, can achieve the purpose of fine adjustment, has high adjustment accuracy, and is also convenient for adjustment operation.

[0081] Figure 8 It is a sectional view structure diagram of the wafer processing equipment according to an embodiment of the present invention.

[0082] In some embodiments of the present invention, referring to Figure 8 , the wafer processing equipment 100 includes a base 101 disposed in a cavity 102 and the wafer support column 1. The base 101 is provided with a mounting hole structure (not marked in the figure), and the wafer support column 1 is disposed in the mounting hole structure (not marked in the figure).

[0083] Specifically, a plurality of the wafer support columns 1 are provided, and the top end of the wafer support column 1 is used to support the wafer 103. This reduces the risk of the wafer support column 1 coming out of the mounting hole structure (not marked in the figure) of the base 101, and reduces the risk of the wafer support column 1 being stuck in the mounting hole structure (not marked in the figure) of the base 101. An air inlet mechanism 104 and a spray plate 105 are further provided at the top of the cavity 102.

[0084] In some possible embodiments of the present invention, the wafer processing equipment includes at least one of a processing module and a loading and unloading module, and the cavity is the cavity of any one of the processing module and the loading and unloading module, with a wide application range and strong versatility.

[0085] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present invention described in the claims. Moreover, the present invention described herein can have other embodiments and can be implemented or realized in various ways.

Claims

1. A wafer support post is disposed within a semiconductor base for supporting a wafer, and is characterized in that, the wafer support post includes a support post body, and a recessed portion is provided on an outer surface of the support post body. The recessed portion is recessed inward relative to the outer surface of the support post body. The recessed portion is provided on a side wall of the support post body, and a top of the recessed portion is connected to a top end portion of the support post body, and a bottom of the recessed portion is connected to a bottom end portion of the support post body; there are N recessed portions, N is 2 or a multiple of 2, and the recessed portions are symmetrically arranged in pairs on the side wall of the support post body; the wafer support post includes an upper member, a lower member and a height adjustment structure, and the upper member and the lower member are connected and fixed by the height adjustment structure.

2. The wafer support post according to claim 1, wherein A radial length of the recessed portion recessed inward relative to the outer surface of the support post body gradually decreases from a top end portion of the support post body toward a bottom end portion of the support post body.

3. The wafer support post according to claim 1, wherein, The recessed portion includes a first recessed portion and a second recessed portion. The first recessed portion is provided on an upper portion of the support post body, and the second recessed portion is provided on a lower portion of the support post body. The first recessed portion and the second recessed portion are connected by a stepped portion. A radial length of the first recessed portion recessed inward relative to the outer surface of the support post body is a first radial length, and a radial length of the second recessed portion recessed inward relative to the outer surface of the support post body is a second radial length. The first radial length is greater than the second radial length.

4. The wafer support post according to claim 1, wherein, A surface of the recessed portion is any one of a flat surface and a curved surface.

5. The wafer support post according to claim 3, wherein A difference between the first radial length and the second radial length is 0.2 mm - 1 mm.

6. The wafer support pillar according to claim 1, wherein, A radial length of the recessed portion recessed inward relative to the outer surface of the support post body is 0.5 mm - 1 mm.

7. The wafer support post according to claim 1, wherein, A difference between a maximum radial length of the recessed portion recessed inward relative to the outer surface of the support post body and a minimum radial length of the recessed portion recessed inward relative to the outer surface of the support post body is not greater than 0.5 mm.

8. The wafer support post according to claim 1, wherein The support post body is any one of a cylindrical structure and a spherical structure.

9. The wafer support post according to claim 1, wherein An upper end portion of the support post body is any one of a hemispherical structure and a conical structure.

10. The wafer support post according to claim 1, wherein, The material of the support post body is at least one of a ceramic material, a sapphire glass material and a metal material.

11. A wafer processing apparatus, characterized in that, It includes a base disposed within a cavity and the wafer support post according to any one of claims 1 - 10. An installation hole structure is provided on the base, and the wafer support post is disposed in the installation hole structure.

12. The wafer processing apparatus according to claim 11, wherein The wafer processing equipment includes at least one of a processing module and a loading and unloading module, and the cavity is a cavity of any one of the processing module and the loading and unloading module.

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