Defect detection method, mask manufacturing method and semiconductor structure forming method

Abstract

A defect detection method, a mask production method, and a semiconductor structure formation method, wherein the defect detection method includes: providing a target layout, the target layout including a plurality of target patterns, each of which extends along a second direction; obtaining an image to be corrected based on the target layout, the image to be corrected including a plurality of patterns to be corrected, the patterns to be corrected corresponding to the target patterns; detecting the image to be corrected based on the target layout to obtain adjacent defective patterns in the image to be corrected; and obtaining regions to be corrected adjacent to the defective patterns. The obtained regions to be corrected provide a basis for subsequent correction of the mask and the formation of the semiconductor structure.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a defect detection method, a mask manufacturing method and a semiconductor structure forming method. Background Art

[0002] Photolithography is a crucial technology in semiconductor manufacturing. It enables the transfer of patterns from a mask onto the silicon wafer surface, creating semiconductor products that meet design requirements. However, existing photolithography techniques are often accompanied by the optical proximity effect.

[0003] Optical Proximity Correction (OPC) was developed to correct for the optical proximity effect. The core concept of OPC is to establish an OPC model based on the consideration of offsetting the optical proximity effect. The photomask pattern is designed based on the OPC model. This allows the photomask pattern to be closer to the target pattern desired by the user, even though the optical proximity effect may occur in the photolithography pattern relative to the mask pattern after photolithography. This offset has been taken into account when designing the photomask pattern based on the OPC model.

[0004] However, the yield of semiconductor structures formed by optical proximity correction masks in the prior art still needs to be improved. Summary of the Invention

[0005] The technical problem solved by the present invention is to provide a defect detection method, a mask manufacturing method and a semiconductor structure forming method, which can effectively improve the yield of the finally formed semiconductor structure.

[0006] To solve the above problems, the present invention provides a defect detection method, comprising: providing a target layout, wherein the target layout includes a plurality of target graphics, and the plurality of target graphics all extend along a second direction; obtaining an image to be corrected according to the target layout, wherein the image to be corrected includes a plurality of graphics to be corrected, and the graphics to be corrected correspond to the target graphics; detecting the image to be corrected according to the target layout, and obtaining adjacent defect graphics in the image to be corrected; and obtaining an area to be corrected in the adjacent defect graphics.

[0007] Optionally, the method for obtaining the image to be corrected includes: performing optical proximity correction processing on the target layout several times to obtain a first optical proximity correction layout, and performing simulated exposure processing on the first optical proximity correction layout to obtain the image to be corrected.

[0008] Optionally, the method for obtaining the image to be corrected includes: providing a semiconductor structure; and performing exposure processing on the semiconductor structure to obtain the image to be corrected.

[0009] Optionally, the adjacent defect patterns include: defect patterns adjacent in a first direction, and the first direction is perpendicular to the second direction.

[0010] Optionally, the adjacent defect patterns include: the defect patterns adjacent in the second direction.

[0011] Optionally, the method for obtaining the defective pattern in the image to be corrected includes: obtaining several first target spacings between the target patterns adjacent along the first direction in the target layout; obtaining several first measured spacings between the patterns to be corrected adjacent along the first direction in the image to be corrected; comparing the first target spacings with the first measured spacings; if the first measured spacing is smaller than the corresponding first target spacing, the corresponding pattern to be corrected is the defective pattern.

[0012] Optionally, the method for obtaining several first target spacings between the target graphics adjacent along the first direction in the target layout includes: dividing the target graphics adjacent along the first direction into several first segments along the second direction; obtaining the distance between the corresponding first segments in adjacent target graphics, and using it as the first target spacing.

[0013] Optionally, the method for obtaining several first measurement distances between the adjacent graphics to be corrected along the first direction in the image to be corrected includes: dividing the adjacent graphics to be corrected along the first direction into several second segments along the second direction; obtaining the distance between the corresponding second segments in the adjacent graphics to be corrected, and using it as the first measurement distance.

[0014] Optionally, the area to be corrected is a rectangle, and the area to be corrected includes a first size along the first direction and a second size along the second direction. The method for obtaining the area to be corrected includes: obtaining the first size and the second size.

[0015] Optionally, the method for obtaining the second size includes: obtaining the segment width dimension of each second segment along the second direction; obtaining a defect segment group in the defect pattern, the defect segment group including one or more continuous second segments, and the first measured spacing of the second segments in the defect segment group are all less than the first target spacing; obtaining the second size by multiplying the number of the second segments in the defect segment group by the segment width dimension of the second segment.

[0016] Optionally, the method for obtaining the first size includes: obtaining the first segment corresponding to the second segment in the defective segment group, and the first size is the minimum first target spacing among the obtained first segments.

[0017] Optionally, after obtaining the second size, it also includes: providing a first regular size; comparing the second size with the first regular size, if the second size is smaller than the first regular size, extending the area to be corrected along the second direction until the second size is greater than or equal to the first regular size.

[0018] Optionally, the method for obtaining the defective pattern in the image to be corrected includes: obtaining a number of second target spacings between the target patterns adjacent along the second direction in the target layout; obtaining a number of second measured spacings between the patterns to be corrected adjacent along the second direction in the image to be corrected; comparing the second target spacings with the second measured spacings; if the second measured spacing is smaller than the corresponding second target spacing, the corresponding pattern to be corrected is the defective pattern.

[0019] Optionally, the method for obtaining several second target spacings between the target graphics adjacent along the second direction in the target layout includes: dividing the target graphics adjacent along the second direction into several third segments along the first direction, where the first direction is perpendicular to the second direction; obtaining the distance between the corresponding third segments in adjacent target graphics, and using it as the second target spacing.

[0020] Optionally, the method for obtaining several second measurement distances between the adjacent graphics to be corrected along the second direction in the image to be corrected includes: dividing the adjacent graphics to be corrected along the second direction into several fourth segments along the first direction; obtaining the distance between the corresponding fourth segments in the adjacent graphics to be corrected, and using it as the second measurement distance.

[0021] Optionally, the area to be corrected is a rectangle, and the area to be corrected includes a third size along the first direction and a fourth size along the second direction. The method for obtaining the area to be corrected includes: obtaining the third size and the fourth size.

[0022] Optionally, the method for obtaining the third size includes: obtaining the adjacent target pattern corresponding to the adjacent defect pattern; obtaining the target pattern width size of the adjacent target pattern along the first direction, and the third size is the larger one of the target pattern width sizes of the adjacent target pattern.

[0023] Optionally, after obtaining the third size, it also includes: providing a second regular size; comparing the third size with the second regular size, if the third size is smaller than the second regular size, extending the area to be corrected along the first direction until the third size is greater than or equal to the second regular size.

[0024] Optionally, the method for obtaining the fourth size includes: using a second target spacing between adjacent target graphics as the fourth size.

[0025] Correspondingly, the present invention also provides a method for making a correction mask, comprising: providing an initial correction mask pattern and a target pattern, wherein the target pattern includes a plurality of target graphics, and the plurality of target graphics all extend along a second direction; obtaining an image to be corrected according to the target pattern, wherein the image to be corrected includes a plurality of graphics to be corrected, and the graphics to be corrected correspond to the target graphics; detecting the image to be corrected according to the target pattern to obtain adjacent defective graphics in the image to be corrected; obtaining an area to be corrected in the adjacent defective graphics; forming a correction graphic on the initial correction mask pattern according to the area to be corrected, to form a correction mask pattern; performing optical proximity correction processing on the correction mask pattern several times to obtain a second optical proximity correction pattern; and making the correction mask according to the second optical proximity correction pattern.

[0026] Optionally, the initial correction mask pattern further has a plurality of cutting patterns.

[0027] Correspondingly, the present invention also provides a method for forming a semiconductor structure, comprising: providing a substrate, wherein the surface of the substrate has a layer to be etched; providing a target layout, wherein the target layout includes a plurality of target patterns, and the plurality of target patterns all extend along a second direction; obtaining an image to be corrected according to the target layout, wherein the image to be corrected includes a plurality of patterns to be corrected, and the patterns to be corrected correspond to the target patterns; detecting the image to be corrected according to the target layout, and obtaining adjacent defective patterns in the image to be corrected; obtaining a region to be corrected in an adjacent defective pattern; performing optical proximity correction processing on the target layout several times to obtain a first optical proximity correction layout, and making a first mask using the first optical proximity correction layout. plate; using the first mask plate as a mask, performing a patterning process on the layer to be etched to form a plurality of core layers on the substrate, wherein there is a defective core layer between the plurality of core layers, and the defective core layer has a defective area; providing an initial correction mask plate pattern; forming a correction pattern on the initial correction mask plate pattern according to the area to be corrected, thereby forming a correction mask plate; performing optical proximity correction processing on the correction mask plate pattern several times to obtain a second optical proximity correction pattern; making the correction mask plate according to the second optical proximity correction pattern; using the correction mask plate as a mask, performing a patterning process on the core layer to form a cutting opening in part of the core layer, and removing the defective area of ​​the defective core layer.

[0028] Optionally, the initial correction mask pattern further has a plurality of cutting patterns.

[0029] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0030] In the defect detection method of the technical solution of the present invention, the image to be corrected is detected according to the target layout to obtain the defect pattern in the image to be corrected; the area to be corrected in the defect pattern is obtained. The obtained area to be corrected provides a correction basis for subsequent correction of the mask.

[0031] In the method for manufacturing a correction mask of the technical solution of the present invention, a correction pattern is formed on the initial correction mask pattern according to the area to be corrected to form a correction mask pattern; the correction mask pattern is subjected to several optical proximity correction processes to obtain a second optical proximity correction pattern; the correction mask is manufactured according to the second optical proximity correction pattern, and the subsequently formed semiconductor structure is corrected by using the correction mask to improve the yield of the finally formed semiconductor structure.

[0032] Furthermore, the initial correction mask plate also has several cutting patterns, which are used to cut the core layer of the subsequently formed semiconductor structure. Setting the cutting patterns and the correction patterns on the same mask plate can effectively reduce production costs and improve production efficiency.

[0033] In the method for forming a semiconductor structure of the technical solution of the present invention, the semiconductor structure is corrected by the correction mask to remove the defective area in the defective core layer, thereby overcoming the problem of short circuit of the core layer and improving the yield of the finally formed semiconductor structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a structural diagram of a semiconductor structure;

[0035] Figure 2 is a flow chart of a defect detection method according to an embodiment of the present invention;

[0036] Figures 3 to 14 This is a schematic structural diagram of each step of an embodiment of a defect detection method of the present invention;

[0037] Figures 15 and 16 1 is a schematic structural diagram of each step of an embodiment of a method for forming a modified mask according to the present invention;

[0038] Figures 17 to 19 It is a schematic structural diagram of each step of an embodiment of a method for forming a semiconductor structure of the present invention. DETAILED DESCRIPTION

[0039] As described in the background art, the yield of semiconductor structures formed by optical proximity correction masks in the prior art still needs to be improved. This will be described in detail below with reference to the accompanying drawings.

[0040] Please refer to Figure 1 , providing a substrate 100, the surface of which has a layer to be etched (not shown); providing a mask (not shown); using the mask as a mask, performing a patterning process on the layer to be etched to form a plurality of core layers 101 on the substrate.

[0041] In this embodiment, although the mask has undergone several optical proximity corrections, as the minimum feature size continues to decrease, the patterns in the mask will be short-circuited (bridge) during the exposure process. If this short-circuit phenomenon is only solved by relying on the mask itself, it will be cumbersome and difficult, or even impossible to solve in some cases. Therefore, the core layer 101 formed in the end will be short-circuited, which will affect the yield of the semiconductor structure formed in the end.

[0042] On this basis, the present invention provides a defect detection method, a mask production method and a semiconductor structure formation method, which detects the image to be corrected, obtains the defect pattern in the image to be corrected, and then obtains the area to be corrected in the defect pattern; improves another correction mask according to the area to be corrected, and in the process of forming the semiconductor structure, corrects the semiconductor structure through the improved correction mask to remove the short-circuited part of the core layer, thereby overcoming the problem of short-circuiting the core layer and improving the yield of the finally formed semiconductor structure.

[0043] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0044] Figure 2 Flowchart of a defect detection method according to an embodiment of the present invention, including:

[0045] Step S21, providing a target layout, wherein the target layout includes a plurality of target patterns, and the plurality of target patterns all extend along a second direction;

[0046] Step S22, obtaining an image to be corrected according to the target layout, wherein the image to be corrected includes a plurality of graphics to be corrected, and the graphics to be corrected correspond to the target graphics;

[0047] Step S23, detecting the image to be corrected according to the target layout to obtain adjacent defect patterns in the image to be corrected;

[0048] Step S24: obtaining the area to be corrected in the adjacent defective pattern.

[0049] The defect detection steps will be described in detail below with reference to the accompanying drawings.

[0050] Figures 3 to 15 It is a structural diagram of each step of the defect detection method according to an embodiment of the present invention.

[0051] Please refer to Figure 3 , providing a target layout 100, wherein the target layout 100 includes a plurality of target graphics 101, and the plurality of target graphics 101 all extend along the second direction Y.

[0052] In this embodiment, the target pattern 101 is a target of optical proximity correction, that is, in an ideal state, a plurality of core layers subsequently formed on the wafer are the same as the target patterns 101 .

[0053] It should be noted that although the ideal core layer is a rectangular strip, due to the existence of the optical proximity effect, the core layer finally formed on the wafer cannot be a regular rectangular strip, and there may be a problem of deformation and short circuit of some adjacent core layers.

[0054] Please refer to Figure 4 , an image 200 to be corrected is obtained according to the target layout 100 , wherein the image 200 to be corrected includes a plurality of graphics 201 to be corrected, and the graphics 201 to be corrected correspond to the target graphics 101 .

[0055] In this embodiment, the method for obtaining the image to be corrected 200 includes: performing optical proximity correction processing on the target layout 100 several times to obtain a first optical proximity correction layout (not shown), and performing simulated exposure processing on the first optical proximity correction layout to obtain the image to be corrected 200.

[0056] In other embodiments, the method for obtaining the image to be corrected may further include: providing a semiconductor structure; performing exposure processing on the semiconductor structure to obtain the image to be corrected; it should be noted that the semiconductor structure is a semiconductor structure actually formed corresponding to the target layout.

[0057] After obtaining the image to be corrected 200, the image to be corrected 200 is detected according to the target layout 100 to obtain adjacent defect patterns in the image to be corrected 200. For the specific process, please refer to Figures 5 to 10 .

[0058] In this embodiment, the adjacent defect patterns include: defect patterns adjacent in a first direction X, where the first direction X is perpendicular to the second direction Y. For a detailed process of obtaining the adjacent defect patterns in the first direction X, please refer to Figures 5 to 7 .

[0059] Please refer to Figure 5 , Figure 5 yes Figure 3 In the enlarged schematic diagram of part A, a plurality of first target spacings A1 between the target graphics 101 adjacent along the first direction X in the target layout 100 are obtained.

[0060] In this embodiment, the method for obtaining a plurality of first target spacings A1 between the target graphics 101 adjacent along the first direction X in the target layout 100 includes: dividing the target graphics 101 adjacent along the first direction X into a plurality of first segments 102 along the second direction Y; and obtaining the distance between the corresponding first segments 102 in adjacent target graphics 101, and using the distance as the first target spacing A1.

[0061] Please refer to Figure 6 , Figure 6 yes Figure 4 In the enlarged schematic diagram of part B, a plurality of first measurement intervals B1 between the adjacent patterns 201 to be corrected along the first direction X in the image 200 to be corrected are obtained.

[0062] In this embodiment, the method for obtaining a plurality of first measurement intervals B1 between adjacent figures 201 to be corrected along the first direction X in the image to be corrected 200 includes: dividing the figures 201 to be corrected that are adjacent along the first direction X into a plurality of second segments 202 along the second direction Y; and obtaining the distances between corresponding second segments 202 in adjacent figures 201 to be corrected, and using the distances as the first measurement intervals B1.

[0063] Please refer to Figure 7 , Figure 7 and Figure 4 The viewing direction is consistent, and the first target spacing A1 is compared with the first measurement spacing B1. If the first measurement spacing B1 is smaller than the corresponding first target spacing A1, the corresponding pattern to be corrected 201 is the defective pattern 203.

[0064] In this embodiment, the adjacent defect patterns 203 further include: the defect patterns 203 adjacent in the second direction Y. For a detailed process of obtaining the adjacent defect patterns 203 in the second direction Y, please refer to Figures 8 to 10

[0065] Please refer to Figure 8 , Figure 8 yes Figure 3 In the enlarged schematic diagram of part A′, a plurality of second target spacings A2 between the target graphics 101 adjacent along the second direction Y in the target layout 100 are obtained.

[0066] In this embodiment, the method for obtaining a plurality of second target spacings A2 between the target graphics 101 adjacent along the second direction Y in the target layout 100 includes: dividing the target graphics 101 adjacent along the second direction Y into a plurality of third segments 103 along a first direction X, where the first direction X is perpendicular to the second direction Y; and obtaining the distance between the corresponding third segments 103 in adjacent target graphics 101, and using the distance as the second target spacing A2.

[0067] Please refer to Figure 9 , Figure 9 yes Figure 4 In the enlarged schematic diagram of the B′ portion, a plurality of second measurement intervals B2 between the adjacent patterns 201 to be corrected along the second direction Y in the image 200 to be corrected are obtained.

[0068] In this embodiment, the method for obtaining a plurality of second measurement intervals B2 between adjacent to-be-corrected figures 201 along the second direction Y in the to-be-corrected image 200 includes: dividing the adjacent to-be-corrected figures 201 along the second direction Y into a plurality of fourth segments 203 along the first direction X; and obtaining the distances between corresponding fourth segments 203 in adjacent to-be-corrected figures 201 as the second measurement intervals B2.

[0069] Please refer to Figure 10 , comparing the second target spacing A2 with the second measurement spacing B2, if the second measurement spacing B2 is smaller than the corresponding second target spacing A2, the corresponding pattern to be corrected 201 is the defective pattern 203.

[0070] After obtaining the defect pattern 203, the area to be corrected adjacent to the defect pattern 203 is obtained. Figures 11 to 14 .

[0071] In this embodiment, the area to be corrected is a rectangle, and the area to be corrected includes a first size along the first direction X and a second size along the second direction Y. The method for obtaining the adjacent areas to be corrected in the first direction X includes: obtaining the first size and the second size. For the specific process, please refer to Figures 11 to 12 .

[0072] Please refer to Figure 11 , obtaining a segment width dimension c1 of each second segment 202 along the second direction Y; obtaining a defective segment group in the defective pattern 203, wherein the defective segment group includes one or more continuous second segments 202, and the first measured spacing B1 of the second segments 202 in the defective segment group is less than the first target spacing A1; and obtaining the second dimension d2 by multiplying the number of the second segments 202 in the defective segment group by the segment width dimension c1 of the second segment 202.

[0073] After obtaining the second size d2, it also includes: providing a first regular size R1; comparing the second size d2 with the first regular size R1, if the second size d2 is smaller than the first regular size R1, extending the area to be corrected S1 along the second direction Y until the second size d2 is greater than or equal to the first regular size R1.

[0074] Since the first regular size R1 is the minimum feature size of the correction pattern on the subsequent correction mask, if the second size d2 is smaller than the first regular size R1, the corresponding correction pattern cannot be formed on the correction mask. Therefore, when the second size d2 is smaller than the first regular size R1, the area to be corrected S1 is extended along the second direction Y until the second size d2 is greater than or equal to the first regular size R1.

[0075] Please refer to Figure 12 , obtaining the first segment 102 corresponding to the second segment 202 in the defective segment group, and the first size d1 is the minimum first target spacing A1 among the obtained first segments 102 .

[0076] In this embodiment, the area to be corrected S1 is a rectangle, and the area to be corrected S1 includes a third size along the first direction X and a fourth size along the second direction Y. The method for obtaining the adjacent area to be corrected S1 in the second direction Y includes: obtaining the third size and the fourth size. For the specific process, please refer to Figures 13 and 14 .

[0077] Please refer to Figure 13 , obtain the adjacent target pattern 101 corresponding to the adjacent defect pattern 203; obtain the target pattern width size c2 (such as Figure 8 As shown), the third dimension d3 is the larger one of the target pattern width dimensions c2 of the adjacent target patterns 101.

[0078] After obtaining the third size d3, the method further includes: providing a second regular size R2; comparing the third size d3 with the second regular size R2; if the third size d3 is smaller than the second regular size R2, extending the area to be corrected S1 along the first direction X until the third size d3 is greater than or equal to the second regular size R2.

[0079] Since the second regular size R2 is the minimum feature size of the correction pattern on the subsequent correction mask, if the third size d3 is smaller than the second regular size R2, the corresponding correction pattern cannot be formed on the correction mask. Therefore, when the third size d3 is smaller than the second regular size R2, the area to be corrected S1 is extended along the first direction X until the third size d3 is greater than or equal to the second regular size R2.

[0080] Please refer to Figure 14 The method for obtaining the fourth size d4 includes: using the second target spacing A2 (such as Figure 8as shown) as the fourth dimension d4.

[0081] At this point, the image to be corrected 200 is inspected according to the target layout 100, and the defect pattern 203 in the image to be corrected 200 is obtained; the steps of obtaining the area to be corrected S1 in the defect pattern 203 are completed. The obtained area to be corrected S1 provides a basis for subsequent correction of the mask.

[0082] Correspondingly, the embodiment of the present invention also provides a method for making a correction mask. For the specific forming process, please refer to Figures 15 and 16 .

[0083] Please refer to Figure 15 , providing an initial revised mask layout 300.

[0084] In this embodiment, the initial correction mask pattern 300 further includes a plurality of cutting patterns 301. The cutting patterns 301 are used to cut off the core layer of the subsequently formed semiconductor structure. Placing the cutting patterns 301 and the correction patterns on the same mask effectively reduces production costs and improves production efficiency.

[0085] Please refer to Figure 16 , providing a region to be corrected S1 obtained by the above-mentioned defect detection method; forming a correction pattern 302 on the initial correction mask pattern 300 according to the region to be corrected S1, thereby forming a correction mask pattern 400.

[0086] In this embodiment, after obtaining the correction mask plate 400, the correction mask plate 400 is subjected to several optical proximity correction processes to obtain a second optical proximity correction plate (not shown); and the correction mask plate (not shown) is manufactured according to the second optical proximity correction plate.

[0087] The semiconductor structure formed subsequently is corrected by using the correction mask to improve the yield of the semiconductor structure finally formed.

[0088] Accordingly, the present invention also provides a method for forming a semiconductor structure. For the specific forming process, please refer to Figures 17 to 19 .

[0089] Please refer to Figure 17 , providing a substrate 500, wherein the surface of the substrate 500 has a layer 501 to be etched.

[0090] In this embodiment, the base 500 includes a substrate and a device layer located on the substrate; in other embodiments, the base may also include only the substrate.

[0091] In this embodiment, the material of the substrate is silicon; in other embodiments, the material of the substrate may also be germanium or silicon germanium.

[0092] Please refer to Figure 18 A first mask is produced based on the image to be corrected 200 obtained in the above-mentioned defect detection method. The first mask is used as a mask to perform a patterning process on the layer to be etched, and a plurality of core layers 502 are formed on the substrate 500.

[0093] In this embodiment, a defective core layer 503 is provided between the core layers 502 , and a defective region S2 is provided in the defective core layer 503 .

[0094] In this embodiment, the defective core layer 503 has a defective region S2 corresponding to the region to be corrected S1 in the image to be corrected.

[0095] Please refer to Figure 19 , according to the correction mask obtained in the above-mentioned method for making the correction mask; using the correction mask as a mask, the core layer 502 is patterned to form a cutting opening 504 in part of the core layer 502, and the defective area S2 of the defective core layer 503 is removed.

[0096] In this embodiment, the cutting opening 504 is formed corresponding to the cutting pattern 301 , and the defective region S2 where the defective core layer 503 is removed is formed corresponding to the correcting pattern 302 .

[0097] At this point, the semiconductor structure is formed. The semiconductor structure is corrected by using the correction mask 400 to remove the defective region S2 in the defective core layer 503, thereby overcoming the short-circuit problem of the core layer 502 and improving the yield of the finally formed semiconductor structure.

[0098] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A defect detection method, characterized in that: include: Providing a target layout, wherein the target layout includes a plurality of target patterns, and the plurality of target patterns all extend along a second direction; Acquire an image to be corrected according to the target layout, wherein the image to be corrected includes a plurality of graphics to be corrected, and the graphics to be corrected correspond to the target graphics; Detecting the image to be corrected according to the target layout to obtain adjacent defect patterns in the image to be corrected; Acquire the area to be corrected in the adjacent defective pattern; wherein, The adjacent defect patterns include: defect patterns adjacent in a first direction, the first direction being perpendicular to the second direction; The method for obtaining the defective pattern in the image to be corrected includes: obtaining a plurality of first target spacings between the target patterns adjacent along the first direction in the target layout; obtaining a plurality of first measured spacings between the patterns to be corrected adjacent along the first direction in the image to be corrected; comparing the first target spacings with the first measured spacings, and if the first measured spacings are smaller than the corresponding first target spacings, the corresponding pattern to be corrected is the defective pattern; The method for obtaining several first target spacings between the target graphics adjacent along the first direction in the target layout includes: dividing the target graphics adjacent along the first direction into several first segments along the second direction; obtaining the distance between the corresponding first segments in adjacent target graphics, and using it as the first target spacing.

2. The defect detection method according to claim 1, wherein: The method for obtaining the image to be corrected includes: performing optical proximity correction processing on the target layout several times to obtain a first optical proximity correction layout, and performing simulated exposure processing on the first optical proximity correction layout to obtain the image to be corrected.

3. The defect detection method according to claim 1, wherein: The method for obtaining the image to be corrected includes: providing a semiconductor structure; and performing exposure processing on the semiconductor structure to obtain the image to be corrected.

4. The defect detection method according to claim 1, wherein: The adjacent defect patterns include: the defect patterns adjacent to each other in the second direction.

5. The defect detection method according to claim 1, wherein: The method for obtaining a plurality of first measurement distances between adjacent graphics to be corrected along the first direction in the image to be corrected includes: dividing the adjacent graphics to be corrected along the first direction into a plurality of second segments along the second direction; and obtaining the distance between corresponding second segments in adjacent graphics to be corrected, and using the distance as the first measurement distance.

6. The defect detection method according to claim 5, wherein: The area to be corrected is a rectangle and includes a first size along the first direction and a second size along the second direction. The method for obtaining the area to be corrected includes: obtaining the first size and the second size.

7. The defect detection method according to claim 6, wherein: The method for obtaining the second size includes: obtaining a segment width dimension of each second segment along the second direction; obtaining a defect segment group in the defect pattern, wherein the defect segment group includes one or more continuous second segments, and the first measured spacing of the second segments in the defect segment group is less than the first target spacing; and obtaining the second size by multiplying the number of the second segments in the defect segment group by the segment width dimension of the second segment.

8. The defect detection method according to claim 7, wherein: The method for obtaining the first size includes: obtaining the first segment corresponding to the second segment in the defective segment group, and the first size is the minimum first target spacing among the obtained first segments.

9. The defect detection method according to claim 6, wherein: Also includes: After obtaining the second size, the method further includes: providing a first regular size; The second size is compared with the first regular size. If the second size is smaller than the first regular size, the area to be corrected is extended along the second direction until the second size is greater than or equal to the first regular size.

10. The defect detection method according to claim 4, wherein: The method for obtaining the defective pattern in the image to be corrected includes: obtaining a plurality of second target spacings between the target patterns adjacent along the second direction in the target layout; obtaining a plurality of second measured spacings between the patterns to be corrected adjacent along the second direction in the image to be corrected; and comparing the second target spacings with the second measured spacings. If the second measured spacing is smaller than the corresponding second target spacing, the corresponding pattern to be corrected is the defective pattern.

11. The defect detection method according to claim 10, wherein: The method for obtaining several second target spacings between the target graphics adjacent along the second direction in the target layout includes: dividing the target graphics adjacent along the second direction into several third segments along the first direction, where the first direction is perpendicular to the second direction; obtaining the distance between the corresponding third segments in adjacent target graphics, and using it as the second target spacing.

12. The defect detection method according to claim 11, wherein: The method for obtaining a plurality of second measurement distances between adjacent figures to be corrected along the second direction in the image to be corrected includes: dividing the adjacent figures to be corrected along the second direction into a plurality of fourth segments along the first direction; and obtaining the distances between corresponding fourth segments in adjacent figures to be corrected, and using them as the second measurement distances.

13. The defect detection method according to claim 12, wherein: The area to be corrected is a rectangle and includes a third size along the first direction and a fourth size along the second direction. The method for obtaining the area to be corrected includes: obtaining the third size and the fourth size.

14. The defect detection method according to claim 13, wherein: The method for obtaining the third size includes: obtaining the adjacent target pattern corresponding to the adjacent defect pattern; obtaining the target pattern width size of the adjacent target pattern along the first direction, and the third size is the larger one of the target pattern width sizes of the adjacent target pattern.

15. The defect detection method according to claim 14, wherein: After obtaining the third size, it also includes: providing a second regular size; comparing the third size with the second regular size, and if the third size is smaller than the second regular size, extending the area to be corrected along the first direction until the third size is greater than or equal to the second regular size.

16. The defect detection method according to claim 13, wherein: The method for obtaining the fourth size includes: using the second target distance between adjacent target graphics as the fourth size.

17. A method for making a correction mask, characterized in that: include: Provide initial correction mask layout; Providing a target layout, wherein the target layout includes a plurality of target patterns, and the plurality of target patterns all extend along a second direction; Acquire an image to be corrected according to the target layout, wherein the image to be corrected includes a plurality of graphics to be corrected, and the graphics to be corrected correspond to the target graphics; Detecting the image to be corrected according to the target layout to obtain adjacent defect patterns in the image to be corrected; Acquire a region to be corrected in the adjacent defect pattern; forming a correction pattern on the initial correction mask pattern according to the area to be corrected, thereby forming a correction mask pattern; Performing optical proximity correction processing on the corrected mask pattern several times to obtain a second optical proximity correction pattern; The correction mask is produced according to the second optical proximity correction pattern; wherein, The adjacent defect patterns include: defect patterns adjacent in a first direction, the first direction being perpendicular to the second direction; The method for obtaining the defective pattern in the image to be corrected includes: obtaining a plurality of first target spacings between the target patterns adjacent along the first direction in the target layout; obtaining a plurality of first measured spacings between the patterns to be corrected adjacent along the first direction in the image to be corrected; comparing the first target spacings with the first measured spacings, and if the first measured spacings are smaller than the corresponding first target spacings, the corresponding pattern to be corrected is the defective pattern; The method for obtaining several first target spacings between the target graphics adjacent along the first direction in the target layout includes: dividing the target graphics adjacent along the first direction into several first segments along the second direction; obtaining the distance between the corresponding first segments in adjacent target graphics, and using it as the first target spacing.

18. The method for manufacturing a correction mask according to claim 17, wherein: The initial correction mask pattern also has a plurality of cutting patterns.

19. A method for forming a semiconductor structure, characterized in that: include: Providing a substrate, wherein a layer to be etched is provided on the surface of the substrate; Providing a target layout, wherein the target layout includes a plurality of target patterns, and the plurality of target patterns all extend along a second direction; Acquire an image to be corrected according to the target layout, wherein the image to be corrected includes a plurality of graphics to be corrected, and the graphics to be corrected correspond to the target graphics; Detecting the image to be corrected according to the target layout to obtain adjacent defect patterns in the image to be corrected; Acquire a region to be corrected in the adjacent defect pattern; Performing optical proximity correction processing on the target layout several times to obtain a first optical proximity correction layout, and making a first mask using the first optical proximity correction layout; Using the first mask as a mask, patterning the layer to be etched is performed to form a plurality of core layers on the substrate, wherein a defective core layer is provided between the core layers, and a defective region is provided within the defective core layer; Provide initial correction mask layout; forming a correction pattern on the initial correction mask pattern according to the area to be corrected, thereby forming a correction mask; Performing optical proximity correction processing on the corrected mask pattern several times to obtain a second optical proximity correction pattern; producing the correction mask according to the second optical proximity correction pattern; The core layer is patterned using the correction mask as a mask to form a cut-off opening in a portion of the core layer and remove the defective region of the defective core layer.

20. The method for forming a semiconductor structure according to claim 19, wherein: The initial correction mask pattern also has a plurality of cutting patterns.

Images