Semiconductor device

Abstract

An embodiment provides a semiconductor device in which a temperature sensor is appropriately arranged. The semiconductor device according to the embodiment includes: a semiconductor portion; a first electrode provided on the back surface of the semiconductor portion; a plurality of second electrodes provided on the surface side of the semiconductor portion and separated from each other; control electrodes provided between the semiconductor portion and each of the plurality of second electrodes; a resin layer covering the surface side of the semiconductor portion and having a plurality of openings exposing the plurality of second electrodes; and a sensor element provided between the semiconductor portion and the resin layer and located at the center of the surface of the semiconductor portion. Each of the plurality of openings of the resin layer has at least four rounded corners. The sensor element is provided between the semiconductor portion and a region surrounded by at least three of the plurality of openings of the resin layer.

Description

[0001] Related Application

[0002] This application claims priority based on Japanese Patent Application No. 2020-152177 (filing date: September 10, 2020). This application incorporates the entire contents of the base application by reference thereto. Technical Field

[0003] The embodiment relates to a semiconductor device. Background Art

[0004] There are semiconductor devices having a temperature sensor on a semiconductor chip provided with switching elements such as transistors. Such a temperature sensor is preferably provided at a position suitable for the layout of the switching elements and capable of accurately detecting the chip temperature. Summary of the Invention

[0005] The embodiment provides a semiconductor device in which a temperature sensor is appropriately arranged.

[0006] The semiconductor device of the embodiment includes: a semiconductor portion; a first electrode provided on the back surface of the semiconductor portion; a plurality of second electrodes provided on the surface side of the semiconductor portion and separated from each other; a control electrode provided between the semiconductor portion and each of the plurality of second electrodes; a resin layer covering the surface side of the semiconductor portion and having a plurality of openings exposing the plurality of second electrodes; and a sensor element provided between the semiconductor portion and the resin layer and located at the center of the surface of the semiconductor portion. The control electrode is electrically insulated from the semiconductor portion by a first insulating film and from each of the plurality of second electrodes by a second insulating film. The semiconductor portion includes: a first semiconductor layer of a first conductivity type extending between the first electrode and the plurality of second electrodes; second semiconductor layers of a second conductivity type provided between the first semiconductor layer and the plurality of second electrodes, respectively; and third semiconductor layers of the first conductivity type provided between the second semiconductor layers and the plurality of second electrodes, respectively. The plurality of second electrodes are electrically connected to the second semiconductor layers and the third semiconductor layers, respectively. Each of the plurality of openings of the resin layer has at least four rounded corners. The sensor element is provided between the semiconductor portion and a region surrounded by at least three of the plurality of openings of the resin layer. Brief Description of the Drawings

[0007] Figure 1 (a) and (b) thereof are schematic views showing the semiconductor device of the first embodiment.

[0008] Figure 2 (a) and (b) thereof are another schematic views showing the semiconductor device of the first embodiment.

[0009] Figure 3 Figures (a) and (b) are another schematic diagram of the semiconductor device of the first embodiment.

[0010] Figure 4 It is a schematic diagram of the semiconductor device of the modified example of the first embodiment.

[0011] Figure 5 Figures (a) and (b) are schematic diagrams of the semiconductor device of another modified example of the first embodiment.

[0012] Figure 6 It is a schematic diagram of the semiconductor device of another modified example of the first embodiment.

[0013] Figure 7 Figures (a) and (b) are schematic diagrams of the semiconductor device of the second embodiment.

[0014] Figure 8 Figures (a) and (b) are schematic diagrams of the semiconductor device of the modified example of the second embodiment.

[0015] Figure 9 Figures (a) and (b) are schematic diagrams of the semiconductor device of another modified example of the second embodiment.

[0016] Figure 10 It is a schematic diagram of the semiconductor device of another modified example of the second embodiment.

[0017] Figure 11 Figures (a) and (b) are schematic diagrams of the semiconductor device of the third embodiment.

[0018] Figure 12 Figures (a) and (b) are schematic diagrams of the semiconductor device of the modified example of the third embodiment.

[0019] Figure 13 Figures (a) and (b) are schematic diagrams of the semiconductor device of another modified example of the third embodiment.

[0020] Figure 14 It is a schematic diagram of the semiconductor device of another modified example of the third embodiment.

[0021] Figure 15 Figures (a) to (d) are schematic diagrams showing the characteristics of the semiconductor device of the embodiment. Detailed implementation mode

[0022] Hereinafter, embodiments will be described with reference to the accompanying drawings. The same parts in the drawings are denoted by the same reference numerals, and their detailed descriptions are appropriately omitted, while different parts will be described. In addition, the drawings are schematic or conceptual, and the relationships between the thicknesses and widths of the respective parts, the ratios of the sizes between the parts, etc. are not necessarily the same as in reality. Also, even when representing the same part, there are cases where the sizes and ratios are represented differently from each other in the drawings.

[0023] Moreover, the configuration and constitution of each part are described using the X-axis, Y-axis, and Z-axis shown in each figure. The X-axis, Y-axis, and Z-axis are orthogonal to each other and represent the X-direction, Y-direction, and Z-direction, respectively. In addition, sometimes the description is made with the Z-direction being upward and the opposite direction being downward.

[0024] (First Embodiment)

[0025] Figure 1 Figs. (a) and (b) are schematic views showing the semiconductor device 1A of the first embodiment. Figure 1 Fig. (a) is a cross-sectional view taken along the Figure 1 line A - A shown in Fig. (b) of Figure 1 Fig. (b) is a top view showing the upper surface of the semiconductor device 1A.

[0026] The semiconductor device 1A is, for example, an IGBT (Insulated Gate Bipolar Transistor). The embodiment is not limited to this example, and can be applied to, for example, MOSFETs, etc. The same applies to other embodiments.

[0027] As Figure 1 shown in Fig. (a) of

[0028] The semiconductor device 1A includes a semiconductor part 10, a first electrode 20, a second electrode 30, and a control electrode 40. The semiconductor part 10 is, for example, silicon. The first electrode 20 is provided on the back surface of the semiconductor part 10. The second electrode 30 is provided on the surface side of the semiconductor part 10. The semiconductor part 10 is provided between the first electrode 20 and the second electrode 30. The first electrode 20 is, for example, a collector, and the second electrode 30 is, for example, an emitter. The first electrode 20 and the second electrode 30 are, for example, metal layers containing aluminum.

[0029] The semiconductor part 10 includes a first semiconductor layer 11 of a first conductivity type, a second semiconductor layer 13 of a second conductivity type, a third semiconductor layer 15 of the first conductivity type, a fourth semiconductor layer 17 of the second conductivity type, and a fifth semiconductor layer 19 of the second conductivity type.

[0029] The first semiconductor layer 11 extends between the first electrode 20 and the second electrode 30. The first semiconductor layer 11 is, for example, an n-type base layer. The second electrode 30 is provided with a plurality of (refer to Figure 1In (b) thereof, the first semiconductor layer 11 extends between the first electrode 20 and the plurality of second electrodes 30.

[0030] The second semiconductor layer 13 is provided between the first semiconductor layer 11 and the second electrode 30. The second semiconductor layer 13 is, for example, a p-type base layer. The second semiconductor layer 13 is electrically connected to the second electrode 30. In addition, a plurality of second semiconductor layers 13 are provided, for example, respectively between the first semiconductor layer 11 and the plurality of second electrodes 30.

[0031] The third semiconductor layer 15 is selectively provided between the second semiconductor layer and the second electrode 30. The third semiconductor layer 15 is, for example, an n-type emitter layer. The second electrode 30 is electrically connected to the third semiconductor layer 15.

[0032] The fourth semiconductor layer 17 is provided between the first semiconductor layer 11 and the second electrode 30 so as to surround the second semiconductor layer 13. That is, the fourth semiconductor layer 17 surrounds the second semiconductor layer 13 along the surface of the semiconductor portion 10. The fourth semiconductor layer 17 is, for example, a p-type protection ring. The fourth semiconductor layer 17 is provided, for example, so as to surround the region where the plurality of second semiconductor layers 13 and the control electrode 40 are provided.

[0033] In this example, a fourth semiconductor layer 17a and a fourth semiconductor layer 17b are provided. The fourth semiconductor layer 17a is in contact with the second semiconductor layer 13, and the fourth semiconductor layer 17b is provided outside the fourth semiconductor layer 17a and separated from the fourth semiconductor layer 17a.

[0034] The fifth semiconductor layer 19 is provided between the first semiconductor layer 11 and the first electrode 20. The fifth semiconductor layer 19 is, for example, a p-type collector layer. The fifth semiconductor layer 19 is electrically connected to the first electrode 20.

[0035] The control electrode 40 is provided between the semiconductor portion 10 and the second electrode 30. The control electrode 40 is provided inside a trench GT provided on the surface side of the semiconductor portion 10. The control electrode 40 is, for example, a gate electrode. The control electrode 40 is, for example, conductive polysilicon.

[0036] The control electrode 40 is electrically insulated from the semiconductor portion 10 through an insulating film 43 and is electrically insulated from the second electrode 30 through an insulating film 45. The insulating film 43 and the insulating film 45 are, for example, silicon oxide films. The control electrode 40 extends in the semiconductor portion 10 and is provided so as to face the first semiconductor layer 11 and the second semiconductor layer 13 with the insulating film 43 therebetween. The third semiconductor layer 15 is provided on the second semiconductor layer 13 and is in contact with the insulating film 43.

[0037] The semiconductor device 1A further includes a resin layer 50. The resin layer 50 covers the surface side of the semiconductor portion 10 and has an opening that exposes a part of the second electrode 30. The resin layer 50 is, for example, polyimide.

[0038] As shown in Figure 1 (b) of FIG. 1, the semiconductor device 1A has a plurality of second electrodes 30A to 30C. The second electrodes 30A to 30C are provided separately from each other on the surface of the semiconductor portion 10. In addition, the semiconductor device 1A further includes a sensor element 60, a control wiring GI, a sensor wiring KI, and an AI. In addition, in Figure 1 (b) of FIG. 1, the surface of the semiconductor device 1A from which the resin layer 50 has been removed is shown.

[0039] The sensor element 60 is provided in a region surrounded by the second electrodes 30A to 30C. The sensor element 60 is, for example, a temperature sensor. In the semiconductor device 1A, current flows from the first electrode 20 to each of the second electrodes 30A to 30C. The sensor element 60 is provided at a position surrounded by the second electrodes 30A, 30B, and 30C. That is, the sensor element 60 is provided at the center on the surface side of the region where current flows from the back surface to the front surface of the semiconductor portion 10. Thereby, the temperature of the semiconductor device 1A can be accurately detected.

[0040] The control wiring GI is provided so as to surround the second electrodes 30A to 30C along the outer edges of the second electrodes 30A to 30C, respectively. The sensor wiring KI and AI are provided in the space between the second electrode 30B and the second electrode 30C and are connected to the sensor element 60.

[0041] The semiconductor device 1A further includes, for example, contact pads GP, AP, KP, SE, and KE. The contact pads GP, AP, and KP are arranged along one side of the semiconductor portion 10, for example. The contact pad GP is connected to the control wiring GI. The contact pad AP is connected to the sensor wiring AI. The contact pad KP is connected to the sensor wiring KI.

[0042] The semiconductor device 1A further includes a current sensor element (not shown) provided under the contact pad SE. The current sensor element has, for example, the same structure as the cross section shown in Figure 1 (a) of FIG. 1. The contact pad SE is, for example, the emitter electrode of the current sensor element.

[0043] The contact pad KE is, for example, a Kelvin emitter electrode pad. The contact pad KE is, for example, a part of the second electrode 30C. The contact pad KE is electrically connected to an external current monitor circuit (not shown) together with the contact pad SE, for example.

[0044] Figure 2 (a) and (b) of FIG. 1 are another schematic views showing the semiconductor device 1A of the first embodiment. Figure 2 (a) of FIG. 1 is a plan view showing the surface of the resin layer 50. Figure 2 (b) of FIG. 1 is along Figure 1The cross-sectional view of line B-B shown in (b).

[0045] As shown in Figure 2 (a), the resin layer 50 has openings 50A to 50C. A part of each of the second electrodes 30A to 30C is exposed in the openings 50A to 50C. The openings 50A to 50C are, for example, formed in a rectangular shape with rounded corners.

[0046] The opening 50A has a curvature radius R1 at each corner. In addition, the curvature radii R1 of the four corners of the opening 50A may be the same value or may be different values respectively. Hereinafter, the curvature radii R2 and R3 of the openings 50B and 50C are also the same.

[0047] The opening 50A is formed, for example, by selectively removing the resin layer 50 covering the surface side of the semiconductor portion 10 by wet etching. The thickness of the resin layer 50 in the Z direction is, for example, 10 micrometers (hereinafter, referred to as μm) or more. Therefore, if the curvature radius R1 of the opening 50A is small, etching residues are likely to remain in the opening. In addition, if the opening width WA along the short side of the opening 50A is narrow, residues may remain inside the opening.

[0048] Figure 15 (a) is a schematic plan view showing residues remaining at the corners of the resin opening. Figure 15 (b) is a schematic plan view showing residues remaining at the center of the resin opening. Figure 15 (c) is a table showing the relationship between the size of the opening and the presence or absence of residues. Figure 15 The dimensions shown in (c) are the corner curvature radius RC and the opening width WL.

[0049] As shown in Figure 15 (c), when the corner curvature radius RC is 20 μm and 100 μm, residues as shown in Figure 15 (a) remain. On the other hand, when the curvature radius RC is 300 μm and 600 μm, no residues are generated at the corners. That is, Figure 15 (c) shows that if the curvature radius RC is 300 μm or more, no residues are generated at the corners.

[0050] In addition, as shown in Figure 15 (c), when the opening width WL is 20 μm, 100 μm, and 300 μm, residues as shown in Figure 15 (b) are generated inside the opening. On the other hand, when the opening width WL is 600 μm, no residues are generated inside the opening. That is, Figure 15 (c) shows that if the opening width WL is 600 μm or more, no residues are generated inside the opening.

[0051] Thus, in the opening 50A, by setting the radius of curvature R1 to 300 μm or more, for example, etching residues can be prevented from occurring at the corners (angles). Further, in the opening 50A, if the opening width WA is set to 600 μm or more, etching residues can be prevented from occurring. The opening 50A is preferably set to have an opening width WA of 600 μm or more and a radius of curvature R1 of 300 μm or more for each corner. The same applies to the other openings 50B and 50C.

[0052] Figure 15 (d) of FIG. shows another example of the sensor configuration. In this example, the resin layer covering the configuration region of the sensor is provided so as to protrude toward the opening side at the corners of each opening surrounding the sensor. Thereby, a space for arranging the sensor between the openings can be ensured. However, in the process of selectively etching the resin layer to form each opening, the tip of the portion protruding toward the opening side may sometimes be etched into an undesired shape. Such an abnormal etching of the opening is determined as a shape defect and becomes an important factor in reducing the manufacturing yield. In the present embodiment, since each opening has rounded corners, such shape defects do not occur, and the manufacturing yield can be improved.

[0053] As Figure 2 shown in (a) of FIG., the openings 50B and 50C are also provided in a square shape with rounded corners. The opening 50B is set such that, for example, the radius of curvature R2 of three corners is 300 μm or more. Further, the opening 50B has a radius of curvature R2S at another corner. The radius of curvature R2S is, for example, larger than the radius of curvature R2. In addition, the opening width of the opening 50B in the direction along the short side is 600 μm or more.

[0054] The opening 50C is also set such that the radius of curvature R3 of three corners is 300 μm or more, for example. Further, the radius of curvature R3S of another corner of the opening 50C is larger than the radius of curvature R3. The opening width of the opening 50C in the direction along the short side is also 600 μm or more.

[0055] The sensor element 60 is provided between the region of the resin layer 50 surrounded by one side of the opening 50A, one corner of the opening 50B, and one corner of the opening 50C and the semiconductor portion 10. One corner of the opening 50B has a radius of curvature R2S, and one corner of the opening 50C has a radius of curvature R3S. The radii of curvature R2S and R3S are preferably 1000 μm or more. The radii of curvature R2S and R3S are, for example, 1028 μm. Thereby, the region of the resin layer 50 surrounded by one side of the opening 50A, one corner of the opening 50B, and one corner of the opening 50C can have a sufficient area for covering the sensor element 60.

[0056] The resin layer 50 also has openings 50E, 50F, 50G, 50H, and 50J. The opening 50E exposes the contact pad KP, the opening 50F exposes the contact pad AP, the opening 50G exposes the contact pad GP, the opening 50H exposes the contact pad SE, and the opening 50J exposes the contact pad KE. The openings 50E, 50F, 50G, 50H, and 50J are, for example, circles with a radius of 300 μm or more. Thereby, residues during the selective etching of the resin layer 50 can be removed (see Figure 15 (b) of

[0057] Figure 2 (b) of

[0058] is a cross-sectional view showing the structure of the sensor element 60. The sensor element 60 includes a first semiconductor region 61 of a first conductivity type, a second semiconductor region 63 of a second conductivity type, a first sensor electrode 65, and a second sensor electrode 67.

[0059] The first semiconductor region 61 and the second semiconductor region 63 are provided, for example, on the semiconductor portion 10 with an insulating film 23 therebetween. The first semiconductor region 61 is, for example, n-type polysilicon. The second semiconductor region 63 is, for example, p-type polysilicon. The insulating film 23 is, for example, a silicon oxide film. The first semiconductor region 61 is arranged to be in contact with the second semiconductor region 63. That is, the sensor element 60 is a temperature sensor composed of a pn junction type diode.

[0060] On the insulating film 23, the first semiconductor region 61 and the second semiconductor region 63 are covered with an insulating film 25. The insulating film 25 is, for example, a silicon oxide film.

[0060] The first sensor electrode 65 is electrically connected to the first semiconductor region 61 through a contact hole provided in the insulating film 25. The first sensor electrode 65 is, for example, a cathode electrode. The first sensor electrode 65 is electrically connected to the contact pad KP through the sensor wiring KI. The first sensor electrode 65 is, for example, a metal layer containing aluminum.

[0061] The second sensor electrode 67 is electrically connected to the second semiconductor region 63 through a contact hole provided in the insulating film 25. The second sensor electrode 67 is, for example, an anode electrode. The second sensor electrode 67 is electrically connected to the contact pad AP through the sensor wiring AI. The second sensor electrode 67 is, for example, a metal layer containing aluminum.

[0062] Figure 3 (a) and (b) of Figure 3 is another schematic view showing the semiconductor device 1A of the first embodiment. Figure 1 (a) is a cross-sectional view along the C - C line shown in Figure 3 (b) of Figure 1 (b) is a cross-sectional view along the D - D line shown in Figure 1

[0063] As shown in Figure 3 (a) of FIG. 1, sensor wirings AI and KI are provided, for example, over the semiconductor section 10 with insulating films 43 and 45 therebetween. The sensor wirings AI and KI are, for example, metal layers containing aluminum.

[0064] As shown in Figure 3 (a) and (b) of FIG. 1, a control wiring GI is provided, for example, over the insulating film 45. The control wiring GI is electrically connected to a contact layer 47 through a contact hole provided in the insulating film 45. The contact layer 47 is, for example, conductive polysilicon provided between the insulating films 43 and 45. The contact layer 47 is provided so as to be connected to the control electrode 40. The control wiring GI is electrically connected to the control electrode 40 through the contact layer 47.

[0065] Figure 4 FIG. 2 is a schematic view of a semiconductor device 1B showing a modification of the first embodiment. In this example, the resin layer 50 has openings 50A to 50C and an opening 50L. The sensor element 60 is provided between the region of the resin layer 50 surrounded by one side of the opening 50A, one corner of the opening 50B, and one corner of the opening 50C and the semiconductor section 10 (see Figure 2 (b) of FIG. 2).

[0066] Contact pads GP, AP, KP, SE, and KE are exposed inside the opening 50L. The opening 50L extends, for example, in the X direction and has an opening width WL in the Y direction. The opening 50L is provided such that, for example, the opening width WL is 600 μm or more. Further, the end portion of the opening 50L in the X direction is formed in a convex shape on the resin layer 50 side. Further, the opening 50L is provided such that it has a radius of curvature RP, for example, at its end portion. The radius of curvature RP is, for example, 300 μm or more.

[0067] Figure 5 (a) and (b) of FIG. 3 are schematic views of a semiconductor device 2A showing another modification of the first embodiment. Figure 5 (a) of FIG. 3 is a plan view of the upper surface of the semiconductor device 2A with the resin layer 50 removed. Figure 5 (b) of FIG. 3 is a plan view of the surface of the resin layer 50.

[0068] As shown in Figure 5 (a) of FIG. 3, the semiconductor device 2A includes second electrodes 30A to 30D. The second electrodes 30A to 30D are provided separately from each other on the surface of the semiconductor section 10. The second electrodes 30A to 30D are arranged so as to surround the sensor element 60.

[0069] The contact pads GP, AP, and KP are arranged along one side of the outer edge of the semiconductor portion 10. The contact pads AP and KP are provided between the outer edge of the semiconductor portion 10 and the second electrode 30B. The contact pad GP is provided between the outer edge of the semiconductor portion 10 and the sensor element 60. The contact pad SE is provided between the outer edge of the semiconductor portion 10 and the second electrode 30D. The contact pad KE is a part of the second electrode 30D.

[0070] As Figure 5 As shown in (b) of, the resin layer 50 has openings 50A to 50D. A part of each of the second electrodes 30A to 30D is exposed in the openings 50A to 50D. In addition, the resin layer 50 has openings 50E, 50F, 50G, 50H, and 50J. The contact pads KP, AP, GP, SE, and KE are exposed in the openings 50A, 50F, 50G, 50H, and 50J, respectively.

[0071] The openings 50A to 50D are each set to a square shape having four rounded corners. The sensor element 60 is provided between the semiconductor portion 10 and the region of the resin layer 50 surrounded by one of the four corners of each of the openings 50A to 50D.

[0072] The radius of curvature R1 of the opening 50A is set to 300 μm or more. In addition, the width of the opening 50A in the direction along the short side is 600 μm or more.

[0073] The radius of curvature R2S of one corner of the opening 50B is larger than the radius of curvature R2 of the other three corners. The radius of curvature R2 is 300 μm or more. In addition, the width of the opening 50B in the direction along the short side is 600 μm or more. The radius of curvature R2S is preferably 1000 μm or more. The radius of curvature R2S is, for example, 1028 μm.

[0074] The radius of curvature of the opening 50C is set to R3 300 μm or more. In addition, the width of the opening 50C in the direction along the short side is 600 μm or more.

[0075] The radius of curvature R4S of one corner of the opening 50D is larger than the radius of curvature R4 of the other three corners. The radius of curvature R4 is 300 μm or more. In addition, the width of the opening 50D in the direction along the short side is 600 μm or more. The radius of curvature R4S is preferably 1000 μm or more. The radius of curvature R4S is, for example, 1028 μm.

[0076] The openings 50E, 50F, 50G, 50H, and 50 are each set to a circular shape, and the radius thereof is 300 μm or more.

[0077] Figure 6 It is a schematic diagram of the semiconductor device 2B showing another modification of the first embodiment. Figure 6It is a plan view showing the surface of the resin layer 50.

[0078] The semiconductor device 2B also has second electrodes 30A to 30D. The second electrodes 30A to 30D are arranged so as to surround the sensor element 60 (see Figure 5 (a) of). Figure 6 The openings 50A to 50D shown expose a part of each of the second electrodes 30A to 30D from the resin layer 50. The openings 50A to 50D are squares each having four rounded corners. The sensor element 60 is provided between the region of the resin layer 50 surrounded by one of the four corners of each of the openings 50A to 50D and the semiconductor portion 10.

[0079] The resin layer 50 also has an opening 50L. The contact pads GP, AP, KP, SE, and KE are exposed inside the opening 50L. The opening 50L extends, for example, in the X direction and has an opening width WL in the Y direction (see Figure 4 ). The opening 50L is set such that, for example, the opening width WL is 600 μm or more. In addition, the end portions of the opening 50L in the X direction are convex toward the resin layer 50. The resin layer 50 is provided with a radius of curvature RP at the end portions of the opening 50L. The radius of curvature RP is, for example, 300 μm or more.

[0080] In addition, even when the opening 50L is provided, it is preferable to leave the resin covering a part of the gate wiring GI located between the contact pads GP and SE and between the contact pads SE and KE (see Figure 1 (b) of).

[0081] (Second Embodiment)

[0082] Figure 7 (a) and (b) of are schematic views showing the semiconductor device 3A of the second embodiment.

[0083] Figure 7 (a) of is a plan view showing the upper surface of the semiconductor device 3A from which the resin layer 50 has been removed.

[0084] Figure 7 (b) of is a plan view showing the sensor element 60B.

[0085] As shown in Figure 7 (a) of, the semiconductor device 3A includes a plurality of second electrodes 30A to 30C. In addition, the semiconductor device 3A further includes a sensor element 60B, a control wiring GI, a sensor wiring KI, and an AI.

[0086] The sensor element 60B is provided between the second electrode 30B and the second electrode 30C. In addition, the sensor element 60B is arranged so as to face one side of the second electrode 30A. The control wiring GI is provided so as to surround the second electrodes 30A to 30C along the outer edges of the second electrodes 30A to 30C respectively. The sensor wiring KI and AI are provided in the space between the second electrode 30B and the second electrode 30C and are connected to the sensor element 60B.

[0087] As Figure 7 shown in (b) of Figure 2 , the sensor element 60B includes a first semiconductor region 61, a second semiconductor region 63, a first sensor electrode 65, and a second sensor electrode 67 (refer to

[0088] (b) of

[0089] Figure 8 (a) and (b) of Figure 8 are schematic top views showing the semiconductor devices 3A and 3B of the second embodiment.

[0090] As Figure 8 shown in (a) of

[0091] , the resin layer 50 of the semiconductor device 3A has openings 50A to 50C. A part of each of the second electrodes 30A to 30C is exposed in the openings 50A to 50C. The openings 50A to 50C are, for example, provided in a square shape with rounded corners. The sensor element 60B is provided between the region of the resin layer 50 surrounded by one side of the opening 50A, one corner of the opening 50B, and one corner of the opening 50C and the semiconductor part 10.

[0092] The resin layer 50 also has openings 50E, 50F, 50G, 50H, and 50J. The opening 50E exposes the contact pad KP, and the opening 50F exposes the contact pad AP. The opening 50G exposes the contact pad GP. Further, the opening 50H exposes the contact pad SE, and the opening 50J exposes the contact pad KE. The openings 50E, 50F, 50G, 50H, and 50J are, for example, circles with a radius of 300 μm or more.

[0093] As Figure 8 shown in (b) of, the resin layer 50 of the semiconductor device 3B has an opening 50L instead of the openings 50E, 50F, 50G, 50H, and 50J. The contact pads GP, AP, KP, SE, and KE are exposed inside the opening 50L. The opening 50L extends, for example, in the X direction and has an opening width WL in the Y direction (see Figure 4 ). The opening 50L is set such that, for example, the opening width WL is 600 μm or more. Further, the end portions of the opening 50L in the X direction are convex toward the resin layer 50. The resin layer 50 has a curvature radius RP of 300 μm or more, for example, at the end portions of the opening 50L (see Figure 4 ).

[0094] Figure 9 (a) and (b) of are schematic views showing a semiconductor device 4A which is a modification of the second embodiment. Figure 9 (a) of is a plan view showing the upper surface of the semiconductor device 4A from which the resin layer 50 has been removed. Figure 9 (b) of is a plan view showing the surface of the resin layer 50.

[0095] As Figure 9 shown in (a) of, the semiconductor device 4A includes second electrodes 30A to 30D. Further, the semiconductor device 4A also includes a sensor element 60B, a control wiring GI, sensor wirings KI and AI, and contact pads GP, AP, KP, SE, and KE.

[0096] The sensor element 60B is provided between the second electrode 30B and the second electrode 30D. Further, the sensor element 60B is arranged so as to face one corner of each of the second electrodes 30A and 30C. The control wiring GI is provided so as to surround the second electrodes 30A to 30D along the outer edges of the second electrodes 30A to 30D, respectively. The sensor wirings KI and AI extend between the second electrode 30B and the second electrode 30D and are connected to the sensor element 60B.

[0097] The contact pads GP, AP, and KP are arranged along one side of the outer edge of the semiconductor part 10. The contact pads AP and KP are provided between the outer edge of the semiconductor part 10 and the second electrode 30B. The contact pad GP is provided between the outer edge of the semiconductor part 10 and the sensor element 60B. The contact pad SE is provided between the outer edge of the semiconductor part 10 and the second electrode 30D. The contact pad KE is a part of the second electrode 30D.

[0098] As Figure 9 As shown in (b) of , the resin layer 50 has openings 50A to 50D. A part of each of the second electrodes 30A to 30D is exposed in the openings 50A to 50D. In addition, the resin layer 50 has openings 50E, 50F, 50G, 50H, and 50J. The contact pads KP, AP, GP, SE, and KE are respectively exposed in the openings 50E, 50F, 50G, 50H, and 50J.

[0099] The openings 50A to 50D are each set to a square shape with four rounded corners. The radius of curvature of the corners of the openings 50A to 50D is preferably 300 μm or more. All the radii of curvature can be, for example, 600 μm, or can be different values respectively.

[0100] The sensor element 60 is provided between the region of the resin layer 50 surrounded by one of the four corners of each of the openings 50A to 50D and the semiconductor part 10. The openings 50E, 50F, 50G, 50H, and 50J are, for example, set to a circular shape with a radius of 300 μm or more.

[0101] Figure 10 It is a schematic diagram of the semiconductor device 4B showing another modification of the second embodiment. Figure 10 It is a top view showing the surface of the resin layer 50. The semiconductor device 4B also has the second electrodes 30A to 30D.

[0102] Figure 10 The shown openings 50A to 50D expose a part of each of the second electrodes 30A to 30D from the resin layer 50. The openings 50A to 50D are squares each having four rounded corners. The sensor element 60B is provided between the region of the resin layer 50 surrounded by one of the four corners of each of the openings 50A to 50D and the semiconductor part 10.

[0103] The resin layer 50 further has an opening 50L, and the contact pads GP, AP, KP, SE, and KE are exposed inside the opening 50L. The opening 50L extends, for example, in the X direction and has an opening width WL in the Y direction (refer to Figure 4)。The opening 50L is set such that, for example, the opening width WL is 600 μm or more. In addition, the end portion of the opening 50L in the X direction is provided in a convex shape on the resin layer 50 side. The opening 50L is set to have a radius of curvature RP at its end (refer to Figure 4 ). The radius of curvature RP is, for example, 300 μm or more.

[0104] (Third Embodiment)

[0105] Figure 11 FIGS. (a) and (b) are schematic views showing the semiconductor device 5A of the third embodiment.

[0106] Figure 11 FIG. (a) is a plan view showing the upper surface of the semiconductor device 5A from which the resin layer 50 has been removed.

[0107] Figure 11 FIG. (b) is a plan view showing the sensor element 60C.

[0108] As Figure 11 shown in FIG. (a), the semiconductor device 5A includes second electrodes 30A to 30C. In addition, the semiconductor device 5A further includes a sensor element 60C, a control wiring GI, a sensor wiring KI, and AI, contact pads GP, AP, KP, SE, and KE.

[0109] The sensor element 60C is provided in a region surrounded by one side of the second electrode 30A, one corner of the second electrode 30B, and one corner of the second electrode 30C. The control wiring GI is provided so as to surround the second electrodes 30A to 30C along the outer edges of the second electrodes 30A to 30C, respectively. The sensor wiring KI and AI are provided in the space between the second electrode 30B and the second electrode 30C and are connected to the sensor element 60C.

[0110] The contact pads GP, AP, and KP are arranged along one side of the semiconductor portion 10. In addition, the contact pads AP and KP are provided between the second electrode 30B and one side of the semiconductor portion 10. The contact pad GP is provided between the sensor element 60C and one side of the semiconductor portion 10. The contact pad SE is provided between the second electrode 30C and one side of the semiconductor portion 10. The contact pad KE is a part of the second electrode 30C.

[0111] As Figure 11 shown in FIG. (b), the sensor element 60C includes a first semiconductor region 61, a second semiconductor region 63, a first sensor electrode 65, and a second sensor electrode 67 (refer to Figure 2(b)). The first sensor electrode 65 is disposed on the first semiconductor region 61 and is electrically connected to the first semiconductor region 61. The second sensor electrode 67 is disposed on the second semiconductor region 63 and is electrically connected to the second semiconductor region 63. The first sensor electrode 65 is connected to the sensor wiring KI, and the second sensor electrode 67 is connected to the sensor wiring AI.

[0112] The first semiconductor region 61 and the second semiconductor region 63 have a shape extending in a direction (e.g., the X direction) intersecting the extending direction of the sensor wirings KI and AI. The width WEY in the Y direction of the combined first semiconductor region 61 and second semiconductor region 63 is narrower than the width WEX in the X direction of each of the first semiconductor region 61 and the second semiconductor region 63.

[0113] Figure 12 (a) and (b) are schematic views showing semiconductor devices 5A and 5B which are modified examples of the third embodiment. Figure 12 (a) and (b) are plan views showing the surface of the resin layer 50.

[0114] As Figure 12 As shown in (a), the resin layer 50 of the semiconductor device 5A has openings 50A to 50C. A part of each of the second electrodes 30A to 30C is exposed in the openings 50A to 50C. The openings 50A to 50C are, for example, formed in a rectangular shape with rounded corners.

[0115] The opening 50A is set such that, for example, the radius of curvature R1 of the four corners is 300 μm or more. The openings 50B and 50C are set such that, for example, the radii of curvature R2 and R3 of the three corners are 300 μm or more. Moreover, one corner of the opening 50B has a radius of curvature R2S, and one corner of the opening 50C has a radius of curvature R3S. The radii of curvature R2S and R3S are preferably 1000 μm or more. The radii of curvature R2S and R3S are, for example, 1028 μm. In addition, the opening widths in the direction along the short sides of the openings 50A to 50B are 600 μm or more.

[0116] The sensor element 60C is disposed between the region of the resin layer 50 surrounded by one side of the opening 50A, the corner of the opening 50B having the radius of curvature R2S, and the corner of the opening 50C having the radius of curvature R3S and the semiconductor part 10 (see Figure 2 (b)).

[0117] The resin layer 50 also has openings 50E, 50F, 50G, 50H, and 50J. The opening 50E exposes the contact pad KP, and the opening 50F exposes the contact pad AP. The opening 50G exposes the contact pad GP. Further, the opening 50H exposes the contact pad SE, and the opening 50J exposes the contact pad KE. The openings 50E, 50F, 50G, 50H, and 50J are, for example, circles with a radius of 300 μm or more.

[0118] As Figure 12 shown in (b) of, the resin layer 50 of the semiconductor device 5B has an opening 50L instead of the openings 50E, 50F, 50G, 50H, and 50J. The contact pads GP, AP, KP, SE, and KE are exposed inside the opening 50L. The opening 50L extends, for example, in the X direction and has an opening width WL in the Y direction (see Figure 4 ). The opening 50L is set such that, for example, the opening width WL is 600 μm or more. Further, the end portions in the X direction of the opening 50L are formed in a convex shape on the resin layer 50 side. The opening 50L is set to have, for example, a radius of curvature RP of 300 μm or more at its end portions (see Figure 4 ).

[0119] Figure 13 (a) and (b) of are schematic views showing a semiconductor device 6A which is a modification of the third embodiment. Figure 13 (a) of is a plan view showing the upper surface of the semiconductor device 6A from which the resin layer 50 has been removed. Figure 13 (b) of is a plan view showing the surface of the resin layer 50.

[0120] As Figure 13 shown in (a) of, the semiconductor device 5A includes second electrodes 30A to 30D. Further, the semiconductor device 5A further includes a sensor element 60C, a control wiring GI, sensor wirings KI and AI, and contact pads GP, AP, KP, SE, and KE.

[0121] The sensor element 60C is provided in a region surrounded by the corners of the second electrodes 30A to 30D respectively. The control wiring GI is provided so as to surround the second electrodes 30A to 30D along the outer edges of the second electrodes 30A to 30D respectively. The sensor wirings KI and AI are provided in the space between the second electrode 30B and the second electrode 30D and are connected to the sensor element 60C.

[0122] The contact pads GP, AP, and KP are arranged along one side of the outer edge of the semiconductor portion 10. The contact pads AP and KP are provided between the outer edge of the semiconductor portion 10 and the second electrode 30B. The contact pad GP is provided between the outer edge of the semiconductor portion 10 and the sensor element 60C. The contact pad SE is provided between the outer edge of the semiconductor portion 10 and the second electrode 30D. The contact pad KE is a part of the second electrode 30D.

[0123] As Figure 13 As shown in (b) of [], the resin layer 50 has openings 50A to 50D. A part of each of the second electrodes 30A to 30D is exposed in the openings 50A to 50D. In addition, the resin layer 50 has openings 50E, 50F, 50G, 50H, and 50J. The contact pads KP, AP, GP, SE, and KE are respectively exposed in the openings 50E, 50F, 50G, 50H, and 50J.

[0124] The openings 50A to 50D are each set to have a square shape with four rounded corners. The radii of curvature R1 and R3 of the corners of the openings 50A and 50C are set to 300 μm or more. In addition, the width of the opening 50A in the direction along the short side is 600 μm or more. One corner of the opening 50B has a radius of curvature R2S, and one corner of the opening 50D has a radius of curvature R4S. The radii of curvature R2S and R4S are preferably 1000 μm or more. The radii of curvature R2S and R4S are, for example, 1028 μm.

[0125] The sensor element 60C is provided between the region of the resin layer 50 surrounded by one corner of each of the four corners of the openings 50A and 50C, the corner of the opening 50B having the radius of curvature R2S, and the corner of the opening 50D having the radius of curvature R4S and the semiconductor portion 10 (see (b) of []). Figure 2 The openings 50E, 50F, 50G, 50H, and 50J are, for example, set to be circular, and their radii are 300 μm or more.

[0126] Figure 14 It is a schematic diagram of a semiconductor device 6B showing another modification of the third embodiment. Figure 14 It is a top view showing the surface of the resin layer 50. The semiconductor device 6B also has the second electrodes 30A to 30D.

[0127] Figure 14 The openings 50A to 50D shown expose a part of each of the second electrodes 30A to 30D from the resin layer 50. The openings 50A to 50D are squares each having four rounded corners.

[0128] The opening 50A includes four corners having a radius of curvature R1, and the opening 50C includes four corners having a radius of curvature R3. The opening 50B includes three corners having a radius of curvature R2 and one corner having a radius of curvature R2S. Additionally, the opening 50D includes three corners having a radius of curvature R4 and one corner having a radius of curvature R4S. The sensor element 60B is provided between the region of the resin layer 50 surrounded by one corner of each of the four corners of the opening 50A and the opening 50C, the corner having a radius of curvature R2S of the opening 50B, and the corner having a radius of curvature R4S of the opening 50D and the semiconductor portion 10 (refer to Figure 2 in (b)).

[0129] The resin layer 50 also has an opening 50L, and the contact pads GP, AP, KP, SE, and KE are exposed inside the opening 50L. The opening 50L extends, for example, in the X direction and has an opening width WL in the Y direction (refer to Figure 4 ). The opening 50L is set such that, for example, the opening width WL is 600 μm or more. Additionally, the end portions of the opening 50L in the X direction are set to be convex with respect to the resin layer 50. The resin layer 50 is set to have a radius of curvature RP at the end portions of the opening 50L (refer to Figure 4 ). The radius of curvature RP is, for example, 300 μm or more.

[0130] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope or gist of the invention and are included in the invention described in the claims and its equivalent scope.

Claims

1. A semiconductor device, comprising: A semiconductor portion; A collector provided on a first surface of the semiconductor portion; A plurality of emitter electrodes provided on a second surface of the semiconductor portion; A control electrode provided between the collector and each of the plurality of emitter electrodes and electrically insulated from the semiconductor portion and each of the plurality of emitter electrodes; A resin layer locally covering the second surface of the semiconductor portion and having a plurality of openings, the plurality of emitter electrodes being at least partially exposed through the plurality of openings, each of the plurality of openings having a rectangular shape with four sides and four rounded corners; And A sensor element located above the second surface of the semiconductor portion and covered by a first portion of the resin layer surrounded by the plurality of openings, The plurality of emitter electrodes include a first emitter electrode, a second emitter electrode, and a third emitter electrode, The plurality of openings in the resin layer include a first opening, a second opening, and a third opening, the first emitter electrode, the second emitter electrode, and the third emitter electrode being at least partially exposed through the first opening, the second opening, and the third opening, respectively, Portions of the first opening, the second opening, and the third opening closest to the sensor element are respectively located at one of the four sides of the first opening, one of the four rounded corners of the second opening, and one of the four rounded corners of the third opening, A first radius of curvature of one of the four rounded corners of the second opening closest to the sensor element is greater than a second radius of curvature of the other three rounded corners of the second opening, A third radius of curvature of one of the four rounded corners of the third opening closest to the sensor element is greater than a fourth radius of curvature of the other three rounded corners of the third opening.

2. The semiconductor device according to claim 1, The sensor element is located above the center of the second surface of the semiconductor portion.

3. The semiconductor device according to claim 1, wherein the semiconductor portion includes: A first semiconductor layer of a first conductivity type extending between the collector and the plurality of emitter electrodes; A second semiconductor layer of a second conductivity type located between the first semiconductor layer and each of the plurality of emitter electrodes; And A third semiconductor layer of the first conductivity type provided between the second semiconductor layer and each of the plurality of emitter electrodes, Each of the emitter electrodes is electrically connected to the second semiconductor layer and the third semiconductor layer.

4. The semiconductor device according to claim 3, The first conductivity type is n-type, The second conductivity type is p-type.

5. The semiconductor device according to claim 3, The sensor element includes a semiconductor portion of a first conductivity type and a semiconductor portion of a second conductivity type.

6. The semiconductor device according to claim 5, The sensor element is a pn-junction type diode temperature sensor.

7. The semiconductor device according to claim 1, The first opening has an area larger than that of the second opening and the third opening.

8. The semiconductor device according to claim 1, The radius of curvature of the rounded corners of each of the plurality of openings is 300 micrometers or more.

9. The semiconductor device according to claim 1, The length of the short side of each of the plurality of openings is 600 micrometers or more.

10. The semiconductor device according to claim 1, further comprising: A plurality of contact pads, electrically connected to the sensor elements respectively, The resin layer has additional openings, and the plurality of contact pads are at least partially exposed through the additional openings.

11. The semiconductor device according to claim 1, further comprising: A plurality of contact pads, electrically connected to the sensor elements respectively, The resin layer has additional openings, and each of the plurality of contact pads is at least partially exposed through the additional openings.

12. A semiconductor device, comprising: A semiconductor part; A collector, provided on a first surface of the semiconductor part; A plurality of emitter electrodes, provided on a second surface of the semiconductor part; A control electrode, provided between the collector and each of the plurality of emitter electrodes and electrically insulated from the semiconductor part and each of the plurality of emitter electrodes; A resin layer, partially covering the second surface of the semiconductor part and having a plurality of openings, the plurality of emitter electrodes are at least partially exposed through the plurality of openings, each of the plurality of openings has a rectangular shape, and the rectangular shape has four sides and four rounded corners; And A sensor element, located above the second surface of the semiconductor part and covered by a first portion of the resin layer surrounded by the plurality of openings, The plurality of emitter electrodes include a first emitter electrode, a second emitter electrode, a third emitter electrode, and a fourth emitter electrode, The plurality of openings in the resin layer include four openings, the four openings include a first opening, a second opening, a third opening, and a fourth opening, the first emitter electrode, the second emitter electrode, the third emitter electrode, and the fourth emitter electrode are at least partially exposed through the first opening, the second opening, the third opening, and the fourth opening respectively, and the first opening and the second opening have an area larger than that of the third opening and the fourth opening, The portions of the first opening, the second opening, the third opening, and the fourth opening closest to the sensor element are respectively located at one of the four rounded corners of the first opening, one of the four rounded corners of the second opening, one of the four rounded corners of the third opening, and one of the four rounded corners of the fourth opening, The first radius of curvature of one of the four rounded corners of the third opening closest to the sensor element is greater than the second radius of curvature of the other three rounded corners of the third opening, and Of the four rounded corners of the fourth opening, the third radius of curvature of the rounded corner closest to the sensor element is greater than the fourth radius of curvature of the other three rounded corners of the fourth opening.

13. The semiconductor device according to claim 1, The second opening and the third opening are adjacent to each other in a first direction parallel to the first surface and the second surface, The sensor element is located between the second opening and the third opening.

14. The semiconductor device according to claim 13, One electrode of the sensor element extends above the second surface of the semiconductor portion in a second direction intersecting the first direction.

15. The semiconductor device according to claim 13, One electrode of the sensor element extends above the second surface of the semiconductor portion in the first direction.

16. The semiconductor device according to claim 1, Each of the first opening, the second opening, and the third opening has a side directly opposite to a side of another of the other openings.

17. A semiconductor device, comprising: A semiconductor portion; A first electrode provided on a first surface of the semiconductor portion; A plurality of second electrodes provided on a second surface of the semiconductor portion; A control electrode between the first electrode and each of the plurality of second electrodes and electrically insulated from the semiconductor portion and each of the plurality of second electrodes; A resin layer locally covering the second surface of the semiconductor portion and having a plurality of openings, the plurality of second electrodes being at least partially exposed through the plurality of openings, each of the plurality of openings having a rectangular shape with four sides and four rounded corners; And A sensor element located above the second surface of the semiconductor portion and covered by a first portion of the resin layer surrounded by the plurality of openings, The plurality of openings of the resin layer include a first opening, a second opening, and a third opening, and the portions of the first opening, the second opening, and the third opening closest to the sensor element are respectively located at one of the four sides of the first opening, one of the four rounded corners of the second opening, and one of the four rounded corners of the third opening, The first radius of curvature of the rounded corner closest to the sensor element among the four rounded corners of the second opening is greater than the second radius of curvature of the other three rounded corners of the second opening, The third radius of curvature of the rounded corner closest to the sensor element among the four rounded corners of the third opening is greater than the fourth radius of curvature of the other three rounded corners of the third opening.

18. The semiconductor device according to claim 17, One of the four sides of the first opening is directly opposite to the sensor element.

19. The semiconductor device according to claim 17, The sensor element is located above the center of the second surface of the semiconductor portion.

20. The semiconductor device according to claim 17, The semiconductor portion includes: A first semiconductor layer of a first conductivity type, extending between the first electrode and the plurality of second electrodes; A second semiconductor layer of a second conductivity type, located between the first semiconductor layer and each of the plurality of second electrodes; And A third semiconductor layer of a first conductivity type, disposed between the second semiconductor layer and each of the plurality of second electrodes, and Each of the second electrodes is electrically connected to the second semiconductor layer and the third semiconductor layer.

21. The semiconductor device according to claim 20, The first conductivity type is n-type, The second conductivity type is p-type.

22. The semiconductor device according to claim 20, The sensor element includes a semiconductor portion of a first conductivity type and a semiconductor portion of a second conductivity type.

23. The semiconductor device according to claim 22, The sensor element is a pn junction type diode temperature sensor.

24. The semiconductor device according to claim 17, The first opening has a larger area than the second opening and the third opening.

25. The semiconductor device according to claim 17, Each of the first opening, the second opening, and the third opening has a side directly opposite to a side of another of the other openings.

Images