piezoelectric vibrator and oscillator having the piezoelectric vibrator

Abstract

The present invention provides a piezoelectric vibrator and an oscillator having the piezoelectric vibrator. The piezoelectric vibrator (100) includes a base member (30), a cover member (40), and a laminated structure (101) disposed between the base member (30) and the cover member (40). The laminated structure (101) includes a piezoelectric vibrating element (10), a semiconductor layer (21), and a pair of measuring electrodes (24c, 24d). The piezoelectric vibrating element (10) includes: a piezoelectric body layer (11) having a pair of opposing main surfaces and electrodes respectively disposed on the piezoelectric body layer (11). 1) A pair of main surfaces are arranged to form a pair of excitation electrodes (14a, 14b) facing each other across a piezoelectric layer (11). A semiconductor layer (21) is stacked on either main surface of the piezoelectric layer (11) of the piezoelectric vibrating element (10). A pair of measuring electrodes (24c, 24d) are disposed on the semiconductor layer (21). The pair of measuring electrodes (24c, 24d) are configured to measure a signal based on the temperature of the piezoelectric vibrating element (10) via the semiconductor layer (21).

Description

Technical Field

[0001] The present invention relates to a piezoelectric vibrator and an oscillator having the piezoelectric vibrator. Background Technology

[0002] Piezoelectric vibrators are used in various electronic devices such as mobile communication terminals, communication base stations, and home appliances for purposes such as timing devices, sensors, and oscillators. A piezoelectric vibrator includes a piezoelectric vibrating element and a retainer. The piezoelectric vibrating element has a mechanical vibrating part that converts electrical vibration into mechanical vibration using the piezoelectric effect, and the retainer houses the piezoelectric vibrating element. Because the frequency of the piezoelectric vibrating element varies based on its frequency-temperature characteristics, the temperature of the piezoelectric vibrating element needs to be measured to achieve high-precision tolerances in piezoelectric vibrators.

[0003] For example, Patent Document 1 discloses a piezoelectric oscillator that includes a piezoelectric vibrating element, a base component on which the piezoelectric vibrating element is mounted, and a cover component that is engaged with the base component and hermetically seals the piezoelectric vibrating element. Circuit patterns and temperature detection parts are arranged on the surface of the base component or the cover component.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2009-27477

[0005] However, in the piezoelectric oscillator described in Patent Document 1, heat conduction is restricted due to a gap between the temperature sensing unit and the piezoelectric vibrating element, resulting in a difference between the temperature of the piezoelectric vibrating element and the temperature measured by the temperature sensing unit. This inability to obtain accurate temperature information leads to inaccurate temperature compensation and causes a deterioration in frequency accuracy. Summary of the Invention

[0006] The present invention was made in view of the following circumstances, and the object of the present invention is to provide a piezoelectric vibrator with improved temperature compensation accuracy and an oscillator having the piezoelectric vibrator.

[0007] One aspect of the piezoelectric vibrator of the present invention includes a base component, a cover component, and a laminated structure disposed between the base component and the cover component. The laminated structure includes a piezoelectric vibrating element, a semiconductor layer, and a pair of measuring electrodes. The piezoelectric vibrating element includes a piezoelectric body layer and a pair of excitation electrodes. The piezoelectric body layer has a pair of opposing main surfaces. The pair of excitation electrodes are respectively disposed on the pair of main surfaces of the piezoelectric body layer so as to be opposite each other across the piezoelectric body layer. The semiconductor layer is laminated on any one of the main surfaces of the piezoelectric body layer of the piezoelectric vibrating element. The pair of measuring electrodes are disposed on the semiconductor layer and are configured to measure a signal based on the temperature of the piezoelectric vibrating element via the semiconductor layer.

[0008] According to the present invention, a piezoelectric vibrator with improved temperature compensation accuracy and an oscillator having the piezoelectric vibrator can be provided. Attached Figure Description

[0009] Figure 1 This is an exploded perspective view schematically showing the structure of the quartz oscillator in the first embodiment.

[0010] Figure 2 This is an exploded perspective view schematically showing the structure of the stacked structure of the first embodiment.

[0011] Figure 3 This is a schematic cross-sectional view showing the structure of the quartz oscillator according to the first embodiment.

[0012] Figure 4 This is a cross-sectional view schematically showing the structure of the stacked structure of the second embodiment.

[0013] Figure 5 This is a cross-sectional view schematically showing the structure of the stacked structure of the third embodiment.

[0014] Figure 6 This is a top view schematically showing the structure of the stacked structure according to the fourth embodiment.

[0015] Figure 7 This is a top view schematically showing the structure of the stacked structure of the fifth embodiment.

[0016] Figure 8 This is a top view schematically showing the structure of the stacked structure according to the sixth embodiment.

[0017] Figure 9 This is a top view schematically showing the structure of the stacked structure according to the seventh embodiment.

[0018] Figure 10 This is a perspective view schematically showing the structure of the quartz oscillator in the eighth embodiment.

[0019] Figure 11 This is a perspective view schematically showing the structure of the quartz oscillator according to the ninth embodiment.

[0020] Figure 12 This is a perspective view schematically showing the structure of the quartz oscillator according to the tenth embodiment.

[0021] Figure 13 This is a perspective view schematically showing the structure of the stacked structure according to the eleventh embodiment.

[0022] Figure 14 This is a cross-sectional view schematically showing the structure of the stacked structure according to the twelfth embodiment.

[0023] Figure 15 This is a schematic cross-sectional view showing the structure of the oscillator according to the thirteenth embodiment. Detailed Implementation

[0024] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. The drawings for each embodiment are illustrative, and the dimensions and shapes of each part are schematic and should not be construed as limiting the technical scope of the present invention to these embodiments.

[0025] In the following description, a quartz crystal resonator unit, which incorporates a quartz crystal resonator element, will be used as an example of a piezoelectric resonator unit. The quartz crystal resonator element utilizes a quartz crystal element as a piezoelectric body excited by the piezoelectric effect.

[0026] Furthermore, the piezoelectric sheet in the embodiments of the present invention is not limited to a quartz sheet. The piezoelectric sheet can also be formed from any piezoelectric material, such as a piezoelectric single crystal, piezoelectric ceramic, piezoelectric thin film, or piezoelectric polymer film. As an example, lithium niobate (LiNbO3) can be cited as a piezoelectric single crystal. Similarly, barium titanate (BaTiO3), lead titanate (PbTiO3), or lead zirconate titanate (Pb(Zr)) can be listed as piezoelectric ceramics. x Ti 1－x O3; PZT), or aluminum nitride (AlN), or lithium niobate (LiNbO3), or lithium metaniobate (LiNb2O6), or bismuth titanate (Bi4Ti3O) 12 Or lithium tantalate (LiTaO3), or lithium tetraborate (Li2B4O7), or lanthanum gallium silicate (La3Ga5SiO) 14 Examples of piezoelectric thin films include those made of tantalum pentoxide (Ta₂O₅) or tantalum pentoxide. Examples of piezoelectric thin films include those formed by sputtering or other methods on substrates such as quartz or sapphire. Examples of piezoelectric polymer films include polylactic acid (PLA), polyvinylidene fluoride (PVDF), and vinylidene fluoride / trifluoroethylene (VDF / TrFE) copolymers. These piezoelectric materials can be used in combination or laminated onto other components.

[0027] <First Implementation>

[0028] First, refer to Figures 1-3 The structure of the quartz oscillator 100 according to the first embodiment of the present invention will be described. Figure 1 This is an exploded perspective view schematically showing the structure of the quartz oscillator in the first embodiment. Figure 2This is an exploded perspective view schematically showing the structure of the stacked structure of the first embodiment. Figure 3 This is a schematic cross-sectional view illustrating the structure of the quartz oscillator according to the first embodiment. Furthermore, Figure 3 The sectional view shown represents along Figure 1 as well as Figure 2 The cross-section of line III-III shown.

[0029] In the various accompanying figures, an orthogonal coordinate system consisting of the X-axis, Y′-axis, and Z′-axis is conveniently added to clarify the relationship between the figures and to facilitate understanding of the positional relationships of the components. The X-axis, Y′-axis, and Z′-axis correspond to each other in the accompanying figures. The X-axis, Y′-axis, and Z′-axis correspond to the crystallographic axes of the quartz plate 11 described later; the X-axis corresponds to the electrical axis (polarity axis), the Y-axis corresponds to the mechanical axis, and the Z-axis corresponds to the optical axis. The Y′-axis and Z′-axis are the axes obtained by rotating the Y-axis and Z-axis about the X-axis from the Y-axis to the Z-axis by 35 degrees 15 minutes ± 1 minute 30 seconds. In the following description, the direction parallel to the X-axis is referred to as the "X-axis direction," the direction parallel to the Y′-axis is referred to as the "Y′-axis direction," and the direction parallel to the Z′-axis is referred to as the "Z′-axis direction." Furthermore, the direction of the arrowheads on the X-axis, Y′-axis, and Z′-axis is referred to as "+" (positive), and the direction opposite to the arrowheads is referred to as "-" (negative).

[0030] The quartz oscillator 100 includes a laminated structure 101, a base component 30, a connecting component 50, and a cover component 40. The laminated structure 101 is disposed between the base component 30 and the cover component 40. Figure 1 as well as Figure 2 In the example shown, the stacked structure 101 is mounted on the base component 30. The base component 30 and the cover component 40 constitute a retainer for housing the stacked structure 101. Figure 1 as well as Figure 2 In the example shown, the base member 30 is flat, and the cover member 40 has a bottomed opening on the base member 30 side to receive the stacked structure 101. The method of holding the stacked structure 101, the shape of the base member 30, and the cover member 40 are not limited to the above description, as long as at least the vibrating portion of the stacked structure 101 is received in the retainer. For example, the base member 30 may also have a bottomed opening on the cover member 40 side to receive the stacked structure 101. Furthermore, the base member 30 and the cover member 40 may also be flat or concave with an opening on the stacked structure 101 side, and clamp the periphery of the vibrating portion of the stacked structure 101.

[0031] The laminated structure 101 includes a quartz vibrating element 10 and a temperature sensing unit 20. The quartz vibrating element 10 and the temperature sensing unit 20 are stacked in the Z-axis direction, with the quartz vibrating element 10 disposed on the base member 30 side of the temperature sensing unit 20. Furthermore, when viewed from the +Y′ axis direction, the laminated structure 101 has a vibrating section 101a containing the excited portion of the quartz vibrating element 10, and a peripheral section 101b located outside the vibrating section 101a. The peripheral section 101b is adjacent to the vibrating section 101a in a direction parallel to the XZ′ plane. Moreover, the stacking order in the laminated structure 101 is not particularly limited, and the temperature sensing unit 20 may also be disposed on the base member 30 side of the quartz vibrating element 10.

[0032] Viewing the laminated structure 101 from the perspective of the overlapping portions of each layer, for example, the temperature sensing unit 20 is only opposed to a portion of the quartz vibrating element 10 in the Y′ axis direction. Specifically, when viewing the laminated structure 101 from the +Y′ axis direction, the quartz vibrating element 10 and the temperature sensing unit 20 do not overlap in the vibrating portion 101a, but overlap in the peripheral portion 101b. Furthermore, if the through hole 29 described later is ignored, the outer edge of the temperature sensing unit 20 overlaps with the outer edge of the quartz vibrating element 10. However, the laminated structure of the laminated structure 101 is not limited to the above. For example, the quartz vibrating element 10 may be opposed to only a portion of the temperature sensing unit 20 in the Y′ axis direction. In other words, when viewed from the +Y′ axis direction, the quartz vibrating element 10 may be located inside the temperature sensing unit 20. Alternatively, the entire quartz vibrating element 10 and the entire temperature sensing unit 20 may be positioned opposite each other in the Y′ axis direction, or a portion of the quartz vibrating element 10 and a portion of the temperature sensing unit 20 may be positioned opposite each other in the Y′ axis direction.

[0033] First, the quartz resonating element 10 will be explained.

[0034] The quartz resonating element 10 is a component that converts electrical energy into mechanical energy by causing quartz to vibrate through the piezoelectric effect. For example... Figure 2 As shown, the quartz resonator 10 includes a thin quartz sheet 11, a first excitation electrode 14a and a second excitation electrode 14b forming a pair of excitation electrodes, a first lead-out electrode 15a and a second lead-out electrode 15b forming a pair of lead-out electrodes, and a first connecting electrode 16a and a second connecting electrode 16b forming a pair of connecting electrodes. The quartz resonator 10 also includes a third connecting electrode 16c and a fourth connecting electrode 16d forming a pair of connecting electrodes. When viewed from above along the +Y′ axis, the shape of the quartz resonator 10 is, for example, rectangular. However, the shape of the quartz resonator 10 is not limited to the above, and may also be circular, elliptical, polygonal, or a combination of these shapes.

[0035] The quartz plate 11 has an upper surface 11A and a lower surface 11B that are opposite to each other. The upper surface 11A is located on the opposite side of the base member 30, that is, on the side opposite to the top surface 41 of the cover member 40 described later. The lower surface 11B is located on the side opposite to the base member 30. The quartz plate 11 corresponds to a piezoelectric layer, and the upper surface 11A and the lower surface 11B correspond to a pair of principal surfaces of the piezoelectric layer.

[0036] The quartz wafer 11 is, for example, an AT-cut type quartz wafer. The AT-cut type quartz wafer 11 is formed such that, in an orthogonal coordinate system composed of intersecting X-axis, Y′-axis, and Z′-axis, the main surface is a surface parallel to the plane determined by the X-axis and Z′-axis (hereinafter referred to as the "XZ′ plane." The same applies to the plane determined by the other axes.), and the thickness is in the direction parallel to the Y′-axis. For example, the AT-cut type quartz wafer 11 is formed by etching a quartz substrate (e.g., a quartz wafer) obtained by cutting and grinding a crystal of synthetic quartz. The processing method for the quartz substrate is not limited to etching; processing using a cutting machine, jet injector, laser, etc., is also possible.

[0037] The quartz resonator 10 using an AT-cut quartz plate 11 exhibits high frequency stability over a wide temperature range. In the AT-cut quartz resonator 10, the thickness shear vibration mode is used as the primary vibration. Furthermore, the rotation angles of the Y′ and Z′ axes in the AT-cut quartz plate 11 can be tilted within a range of -5 degrees to 15 degrees from 35 degrees 15 minutes. The cutting angle of the quartz plate 11 can also utilize different cuts besides AT cutting. For example, BT cutting, GT cutting, SC cutting, etc., can also be used. Additionally, the quartz resonator can also be a tuning fork type quartz resonator using a quartz plate with a cutting angle known as a Z-plate.

[0038] The AT-cut quartz plate 11 is a plate with a long side extending parallel to the X-axis, a short side extending parallel to the Z′-axis, and a thickness extending parallel to the Y′-axis. When viewed from above on the upper surface 11A, the quartz plate 11 has a rectangular shape and is a plate with uniform thickness.

[0039] Furthermore, the planar shape of the quartz plate 11 when viewed from above the upper surface 11A is not limited to a rectangular shape. The planar shape of the quartz plate 11 can also be polygonal, circular, elliptical, or a combination of these shapes. Additionally, the planar shape of the quartz plate 11 can also be a tuning fork shape having a base and a vibrating arm extending parallel to the base. Slits can also be formed in the quartz plate 11 for the purpose of suppressing vibration leakage and stress transmission.

[0040] Furthermore, the shape of the quartz plate 11 is not limited to a flat plate of uniform thickness. To suppress vibration leakage and stress transmission, the quartz plate 11 of the vibrating portion 101a may be thicker or thinner than the quartz plate 11 of the peripheral portion 101b. In other words, the quartz plate 11 may also have a mesa-type structure or an inverted mesa-type structure. In this case, the boundary between the vibrating portion 101a and the peripheral portion 101b in the quartz plate 11 may be, for example, a cone-shaped structure where the thickness of the quartz plate 11 changes continuously, but it may also be a stepped shape where the thickness change is discontinuous. The quartz plate 11 may also be a convex-type structure or a Bezier-type structure where the thickness change at the boundary between the vibrating portion 101a and the peripheral portion 101b changes continuously. Furthermore, the mesa-type structure or the inverted mesa-type structure may be provided only on either the upper surface 11A or the lower surface 11B of the quartz plate 11, or it may be provided on both surfaces.

[0041] A first excitation electrode 14a and a second excitation electrode 14b are disposed on the vibration part 101a. The first excitation electrode 14a is disposed on the upper surface 11A side of the quartz plate 11, and the second excitation electrode 14b is disposed on the lower surface 11B side of the quartz plate 11. In other words, the first excitation electrode 14a is disposed on the main surface of the cover member 40 side of the quartz plate 11, and the second excitation electrode 14b is disposed on the main surface of the base member 30 side of the quartz plate 11. The first excitation electrode 14a and the second excitation electrode 14b are positioned opposite each other across the quartz plate 11. When viewed from above on the upper surface 11A of the quartz plate 11, the first excitation electrode 14a and the second excitation electrode 14b are each rectangular in shape and are arranged to approximately overlap each other. The first excitation electrode 14a and the second excitation electrode 14b each have a long side parallel to the X-axis direction, a short side parallel to the Z′-axis direction, and a thickness parallel to the Y′-axis direction. When the stacked structure 101 is viewed from above in the +Y′ direction, the first excitation electrode 14a and the second excitation electrode 14b are disposed inside the via 29 formed in the semiconductor layer 21, as described later.

[0042] Furthermore, the planar shapes of the first excitation electrode 14a and the second excitation electrode 14b when viewed from above the upper surface 11A of the quartz plate 11 are not limited to rectangular shapes. The planar shapes of the first excitation electrode 14a and the second excitation electrode 14b can also be polygonal, circular, elliptical, or a combination of these shapes.

[0043] The first lead-out electrode 15a is disposed on the upper surface 11A side of the quartz plate 11, and the second lead-out electrode 15b is disposed on the lower surface 11B side of the quartz plate 11. The first lead-out electrode 15a electrically connects the first excitation electrode 14a to the first connecting electrode 16a. The second lead-out electrode 15b electrically connects the second excitation electrode 14b to the second connecting electrode 16b. Specifically, as... Figure 2 as well as Figure 3 As shown, the first lead-out electrode 15a extends along the X-axis direction, with one end connected to the first excitation electrode 14a at the vibration portion 101a, and the other end connected to the through electrode connected to the first connecting electrode 16a at the peripheral portion 101b. Similarly, the second lead-out electrode 15b extends along the X-axis direction, with one end connected to the second excitation electrode 14b at the peripheral portion 101b, and the other end electrically connected to the second connecting electrode 16b at the vibration portion 101a. From the viewpoint of reducing stray capacitance, when viewed from above on the upper surface 11A of the quartz plate 11, the first lead-out electrode 15a and the second lead-out electrode 15b are separated from each other, and when viewed from the second lead-out electrode 15b, the first lead-out electrode 15a is positioned in the +Z′ axis direction.

[0044] Furthermore, the electrical connection method between the first lead-out electrode 15a and the first connecting electrode 16a is not limited to using a through electrode that penetrates the quartz plate 11 along the Y′ axis. For example, a side electrode disposed on the side of the upper surface 11A and the lower surface 11B of the connecting quartz plate 11 can also be used to connect the first lead-out electrode 15a and the first connecting electrode 16a.

[0045] The first connecting electrode 16a and the second connecting electrode 16b are electrodes used to electrically connect the first excitation electrode 14a and the second excitation electrode 14b to the base component 30, respectively, and are disposed on the lower surface 11B side of the quartz plate 11 in the peripheral portion 101b. Figure 2 As shown, when viewed from the first excitation electrode 14a and the second excitation electrode 14b, the first connecting electrode 16a and the second connecting electrode 16b are located at the ends on the -X axis direction side, and when viewed from the second connecting electrode 16b, the first connecting electrode 16a is located in the +Z′ axis direction.

[0046] The third connecting electrode 16c and the fourth connecting electrode 16d are electrodes used to electrically connect the first measuring electrode 24c and the second measuring electrode 24d (described later) to the base component 30, respectively, and are disposed on the lower surface 11B side of the quartz plate 11 in the peripheral portion 101b. Figure 2 In the example shown, when viewed from the first excitation electrode 14a and the second excitation electrode 14b, the third connecting electrode 16c and the fourth connecting electrode 16d are respectively disposed at the corners on the -X axis direction side. When viewed from the first connecting electrode 16a, the fourth connecting electrode 16d is disposed in the +Z′ axis direction, and when viewed from the second connecting electrode 16b, the third connecting electrode 16c is disposed in the -Z′ axis direction.

[0047] For example, chromium (Cr) and gold (Au) are sequentially layered to form the first excitation electrode 14a and the second excitation electrode 14b, the first lead-out electrode 15a and the second lead-out electrode 15b, and the first connecting electrode 16a to the fourth connecting electrode 16d. Chromium is superior to gold in terms of adhesion to the quartz plate 11, while gold is superior to chromium in terms of chemical stability. Therefore, when the electrodes of the quartz resonator 10 are a multilayer structure composed of chromium and gold, electrode peeling and oxidation can be suppressed, thus providing a quartz resonator 10 with high reliability. The materials constituting the electrodes of the quartz resonator 10 are not limited to Cr and Au; the electrodes may also contain metallic materials such as Ti, Mo, Al, Ni, Pd, Ag, and Cu. The electrodes may also contain conductive ceramics, conductive resins, etc.

[0048] Next, the temperature detection unit 20 will be explained.

[0049] The temperature sensing unit 20 includes a semiconductor layer 21 stacked on the quartz vibrating element 10, and a first measuring electrode 24c and a second measuring electrode 24d constituting a pair of measuring electrodes. The temperature sensing unit 20 is disposed in the peripheral portion 101b, bypassing the vibrating portion 101a, and is arranged in a frame shape that continuously surrounds the vibrating portion 101a in the circumferential direction. When viewed from above in the +Y′ axis direction, the outer edge of the temperature sensing unit 20 has a shape that is, for example, rectangular, and approximately the same as (consistent with) the shape of the quartz vibrating element 10. However, the shape of the outer edge of the temperature sensing unit 20 is not limited to a rectangular shape; it can also be circular, elliptical, polygonal, or a combination of these shapes. Furthermore, the shape of the outer edge of the temperature sensing unit 20 is not limited to a shape identical to that of the quartz vibrating element 10; it can be a shape similar to or different from that of the quartz vibrating element 10.

[0050] The semiconductor layer 21 provides a conductive path between the first measuring electrode 24c and the second measuring electrode 24d, and functions as a resistive element whose resistance changes with temperature. Since the semiconductor layer 21 is stacked on the quartz resonator 10, the semiconductor layer 21 and the quartz resonator 10 are in thermal equilibrium. Therefore, the first measuring electrode 24c and the second measuring electrode 24d measure the resistance of the semiconductor layer 21, which changes based on the temperature of the quartz resonator 10.

[0051] Furthermore, the first measuring electrode 24c and the second measuring electrode 24d are not limited to the above-described structure as long as they can measure the signal based on the temperature of the quartz resonating element 10 via the semiconductor layer 21. For example, the first measuring electrode 24c and the second measuring electrode 24d can also measure inductance and capacitance.

[0052] Semiconductor layer 21 has an upper surface 21A and a lower surface 21B that are opposite to each other. The upper surface 21A is located on the side opposite to the top surface 41 of the cover member 40, which will be described later. The lower surface 21B is located on the side opposite to the base member 30, that is, on the side opposite to the quartz resonator element 10. The upper surface 21A and the lower surface 21B correspond to a pair of main surfaces of semiconductor layer 21.

[0053] When viewed from above on the upper surface 21A of the semiconductor layer 21, the semiconductor layer 21 has a front end portion 22a, a rear end portion 22b, a right end portion 22c, and a left end portion 22d. The front end portion 22a and the rear end portion 22b correspond to a pair of short sides facing each other in the X-axis direction and extending along the Z′-axis direction. The right end portion 22c and the left end portion 22d correspond to a pair of long sides facing each other in the Z′-axis direction and extending along the X-axis direction. That is, the two ends of the front end portion 22a are respectively connected to one end of the right end portion 22c and the left end portion 22d, and the two ends of the rear end portion 22b are respectively connected to the other ends of the right end portion 22c and the left end portion 22d. Viewed from the first excitation electrode 14a and the second excitation electrode 14b, the front end portion 22a is located on the side of the first connecting electrode 16a and the second connecting electrode 16b. Viewed from the front end portion 22a, the rear end portion 22b is located on the +X-axis direction side, and viewed from the right end portion 22c, the left end portion 22d is located on the +Z′-axis direction side.

[0054] Through-holes 29 are formed in the semiconductor layer 21, opening on both the upper surface 21A and the lower surface 21B. The through-holes 29 are formed in the vibrating portion 101a. The semiconductor layer 21 is configured to avoid the vibrating portion 101a and not contact the first excitation electrode 14a and the second excitation electrode 14b. The semiconductor layer 21 is configured to contact the quartz vibrating element 10 substantially entirely in the peripheral portion 101b, forming a rectangular frame along the front end portion 22a, rear end portion 22b, right end portion 22c, and left end portion 22d.

[0055] A semiconductor layer 21 is formed using a semiconductor with low conductivity to ensure sufficient insulation and separation between the first excitation electrode 14a and the first measuring electrode 24c and the second measuring electrode 24d. For example, the semiconductor layer 21 is an i-type or a non-degenerate, low-concentration n-type or p-type silicon semiconductor. However, the semiconductor layer 21 is not limited to the above; it can also be a single-element semiconductor such as germanium, a compound semiconductor such as arsenic gallium nitride, or an organic semiconductor such as pentacene.

[0056] The first measuring electrode 24c and the second measuring electrode 24d are disposed on the lower surface 21B of the semiconductor layer 21 and are held between the quartz plate 11 and the semiconductor layer 21. Viewed from the first excitation electrode 14a and the second excitation electrode 14b, the first measuring electrode 24c and the second measuring electrode 24d are disposed at the same end as the first connecting electrode 16a and the second connecting electrode 16b. Furthermore, the first measuring electrode 24c and the second measuring electrode 24d are further away from the first excitation electrode 14a and the second excitation electrode 14b than the first connecting electrode 16a and the second connecting electrode 16b. The stacked structure 101 is a so-called cantilever structure; viewed from the first excitation electrode 14a and the second excitation electrode 14b, one end (corresponding to the portion of the front end 22a of the semiconductor layer 21) on each side of the +X-axis direction and the -X-axis direction is engaged with the base member 30, while the other end (corresponding to the portion of the rear end 22b of the semiconductor layer 21) is separated from the base member 30. The first measuring electrode 24c is disposed at the corner formed by the front end portion 22a and the right end portion 22c, and the second measuring electrode 24d is disposed at the corner formed by the front end portion 22a and the left end portion 22d. The first measuring electrode 24c and the second measuring electrode 24d are electrically connected to the third connecting electrode 16c and the fourth connecting electrode 16d respectively through side electrodes disposed on the side of the quartz plate 11.

[0057] Furthermore, the first measuring electrode 24c and the second measuring electrode 24d can be disposed on the upper surface 21A of the semiconductor layer 21, or on the side connecting the upper surface 21A and the lower surface 21B of the semiconductor layer 21. Alternatively, when viewed from above, the first measuring electrode 24c and the second measuring electrode 24d can be disposed on the side opposite to the first connecting electrode 16a and the second connecting electrode 16b when viewed from the upper surface 21A of the semiconductor layer 21. That is, the stacked structure 101 can also be a so-called double-support structure in which both sides of one end and the other end are joined to the base member 30 when viewed from the first excitation electrode 14a and the second excitation electrode 14b. In addition, the first measuring electrode 24c and the second measuring electrode 24d can also be electrically connected to the third connecting electrode 16c and the fourth connecting electrode 16d respectively via through electrodes.

[0058] Next, the base component 30 will be described.

[0059] The base component 30 holds the quartz resonator 10 in an excitable state. The base component 30 includes a base 31 having an upper surface 31A and a lower surface 31B facing each other. The upper surface 31A is located on the side of the laminated structure 101 and the cover component 40, corresponding to the mounting surface of the laminated structure 101. The lower surface 31B, for example, corresponds to a mounting surface for bonding with an external circuit board (not shown). The base 31 is, for example, a sintered material such as insulating ceramic (alumina). From the viewpoint of suppressing the generation of thermal stress, it is preferable that the base 31 is made of a heat-resistant material. From the viewpoint of suppressing the stress applied to the quartz resonator 10 by thermal experience, the base 31 can also be made of a material having a thermal expansion coefficient close to that of the quartz plate 11; for example, quartz can also be used to make the base 31.

[0060] The base component 30 includes a first electrode pad 33a and a second electrode pad 33b forming a pair of electrode pads, and a third electrode pad 33c and a fourth electrode pad 33d forming a pair of electrode pads. The first electrode pads 33a to the fourth electrode pads 33d are disposed on the upper surface 31A of the base 31. The first electrode pads 33a and the second electrode pads 33b are terminals for electrically connecting the quartz resonator 10 to the base component 30, and the third electrode pads 33c and the fourth electrode pads 33d are terminals for electrically connecting the temperature sensing unit 20 to the base component 30. The ends of the first electrode pads 33a to the fourth electrode pads 33d on the X-axis side of the base component 30 are arranged along the Z′ axis direction.

[0061] The base component 30 includes a first external electrode 35a, a second external electrode 35b, a third external electrode 35c, and a fourth external electrode 35d. The first external electrode 35a to the fourth external electrode 35d are disposed on the lower surface 31B of the base 31. The first external electrode 35a and the second external electrode 35b are terminals for electrically connecting an external circuit board (not shown) to the quartz oscillator 100. The third external electrode 35c and the fourth external electrode 35d are terminals for electrically connecting an external circuit board (not shown) to the temperature detection unit 20.

[0062] The first external electrode 35a and the second external electrode 35b are arranged along the Z′ axis at their ends on the +X axis side of the base component 30. The third external electrode 35c and the fourth external electrode 35d are arranged along the Z′ axis at their ends on the -X axis side of the base component 30. The first electrode pad 33a is electrically connected to the first external electrode 35a via a first through electrode 34a penetrating the substrate 31 and a base wiring disposed on the lower surface 31B of the substrate 31. The second electrode pad 33b is electrically connected to the second external electrode 35b via a second through electrode 34b penetrating the substrate 31 along the Y′ axis and a base wiring disposed on the lower surface 31B of the substrate 31. The third electrode pad 33c and the fourth electrode pad 33d are electrically connected to the third external electrode 35c and the fourth external electrode 35d respectively via the third through electrode 34c and the fourth through electrode 34d penetrating the substrate 31.

[0063] The first electrode pad 33a and the second electrode pad 33b can also be electrically connected to the first external electrode 35a and the second external electrode 35b respectively via base wiring provided on the upper surface 31A of the substrate 31. The first electrode pad 33a to the fourth electrode pad 33d can also be electrically connected to the first external electrode 35a to the fourth external electrode 35d respectively via side electrodes provided on the side connecting the upper surface 31A and the lower surface 31B of the substrate 31. The first external electrode 35a to the fourth external electrode 35d can also be formed as concave castle-shaped electrodes on the side of the substrate 31.

[0064] The base component 30 includes a first conductive retaining component 36a and a second conductive retaining component 36b constituting a pair of conductive retaining components, and a third conductive retaining component 36c and a fourth conductive retaining component 36d constituting a pair of conductive retaining components. The first conductive retaining component 36a to the fourth conductive retaining component 36d mount the laminated structure 101 onto the base component 30 and electrically connect the laminated structure 101 to the base component 30. The first conductive retaining component 36a joins and electrically connects a first electrode pad 33a to a first connecting electrode 16a. The second conductive retaining component 36b joins and electrically connects a second electrode pad 33b to a second connecting electrode 16b. The third conductive retaining component 36c joins and electrically connects a third electrode pad 33c to a third connecting electrode 16c. The fourth conductive retaining component 36d joins and electrically connects a fourth electrode pad 33d to a fourth connecting electrode 16d. The first conductive retaining member 36a to the fourth conductive retaining member 36d hold the laminated structure 101 at a distance from the base member 30 so that the vibrating part 101a can be excited.

[0065] The first conductive retaining member 36a to the fourth conductive retaining member 36d are, for example, conductive adhesives comprising thermosetting resins, UV-curing resins, etc., with silicone-based resins as the main component. The adhesives contain additives such as conductive particles for imparting conductivity. For example, conductive particles containing silver (Ag) can be used as conductive particles. The main component of the conductive adhesive can also be epoxy resins, acrylic resins, etc. The first conductive retaining member 36a to the fourth conductive retaining member 36d are formed by applying an uncured conductive adhesive paste as a precursor and then curing the conductive adhesive paste using a chemical reaction caused by heating, UV irradiation, etc. Fillers can be added to the adhesive in the first conductive retaining member 36a to the fourth conductive retaining member 36d for the purpose of increasing strength or maintaining the spacing between the base member 30 and the quartz resonating element 10. Alternatively, the first conductive retaining member 36a to the fourth conductive retaining member 36d can be formed using solder.

[0066] Next, the cover component 40 will be described.

[0067] The cover member 40 is joined to the base member 30, forming an internal space 49 between them to accommodate the stacked structure 101. The shape of the cover member 40 is not particularly limited as long as it can accommodate at least the vibrating part 101a of the stacked structure 101, nor is the material of the cover member 40 particularly limited, but it can be made of a conductive material such as metal. By using a conductive material to construct the cover member 40, it is given an electromagnetic shielding function that reduces the entry and exit of electromagnetic waves into the internal space 49.

[0068] The cover member 40 has a sidewall portion 42 and a flat top portion 41, wherein the sidewall portion 42 is connected to the outer edge of the top portion 41 and extends in a direction intersecting the main surface of the top portion 41. The planar shape of the top portion 41 when viewed from the normal direction of the main surface is, for example, rectangular. The front end of the sidewall portion 42 extends into a frame shape to surround the periphery of the stacked structure 101.

[0069] The cover member 40 can also be joined to the outer edge of the stacked structure 101 to form an internal space 49. In this case, the outer edge of the stacked structure 101 can also be held by the base member 30 and the cover member 40. Alternatively, the cover member 40 can be made of ceramic material, semiconductor material, resin material, etc. In addition, the planar shape of the top surface 41 can be polygonal, circular, elliptical, or a combination of these shapes.

[0070] Next, the joining component 50 will be described.

[0071] The bonding member 50 is provided around the entire circumference of both the base member 30 and the cover member 40, forming a rectangular frame. Furthermore, the first electrode pads 33a to the fourth electrode pads 33d are disposed inside the bonding member 50, which is configured to surround the stacked structure 101. The bonding member 50 bonds the front end of the sidewall portion 22 of the cover member 40 to the upper surface 31A of the base 30. For example, the bonding member 50 is formed by a metallization layer provided on the upper surface 31A of the base 31 and an Au-Sn alloy-based metal solder provided on the metallization layer.

[0072] Furthermore, the joining member 50 is not limited to a continuous frame shape in the circumferential direction, and can also be configured to be discontinuous in the circumferential direction. Additionally, the joining member 50 can be provided using resin-based, glass-based insulating adhesives, or the like.

[0073] Next, the operation of the quartz oscillator 100 will be explained.

[0074] The quartz oscillator 100 has a temperature detection mode for measuring the temperature of the quartz resonating element 10 and a signal output mode for driving the quartz resonating element 10 by performing temperature compensation based on the measurement results in the temperature detection mode.

[0075] In temperature detection mode, for example, current flows between the first measuring electrode 24c and the second measuring electrode 24d in the semiconductor layer 21, and the resistance value of the semiconductor layer 21 is measured. The resistance value of the semiconductor layer 21 varies with the temperature of the semiconductor layer 21, but due to thermal conduction between the semiconductor layer 21 and the quartz resonator 10, the temperature of the semiconductor layer 21 is approximately the same as the temperature of the quartz resonator 10. Therefore, in temperature detection mode, the temperature of the quartz resonator 10 is measured by measuring the change in the resistance value of the semiconductor layer 21.

[0076] In signal output mode, the frequency of the oscillation circuit based on the quartz resonator 10 is corrected by temperature compensation based on the measurement results in temperature detection mode. For example, this temperature compensation is achieved by changing the signal to the variable capacitor used for frequency correction.

[0077] As described above, the quartz oscillator 100 of this embodiment includes a quartz oscillating element 10 and a temperature detection unit 20 stacked on the quartz oscillating element 10. The temperature detection unit 20 has a semiconductor layer 21 stacked on the quartz oscillating element 10, and a first measuring electrode 24c and a second measuring electrode 24d constituting a pair of measuring electrodes that measure the resistance value based on the temperature of the quartz oscillating element 10 via the semiconductor layer 21.

[0078] Therefore, compared to a structure where the temperature change of the resistance value is measured by connecting the semiconductor layer and the quartz resonator via a conductive holding component, the heat-conducting area of ​​the semiconductor layer and the quartz resonator can be increased. Consequently, the heat conduction rate from the quartz resonator to the semiconductor layer is increased, and the temperature difference between the semiconductor layer and the quartz resonator is reduced. Therefore, the temperature of the quartz resonator can be measured more accurately. Thus, a quartz oscillator capable of outputting a frequency clock with narrow tolerance accuracy can be provided.

[0079] Furthermore, the measurement of a pair of measuring electrodes is not limited to resistance values, as long as the signal is measured through the semiconductor layer and is based on the temperature change of the quartz resonating element. A pair of measuring electrodes can also measure inductance and capacitance, for example.

[0080] In addition, in the quartz oscillator 100 of this embodiment, the semiconductor layer 21 is configured to be non-contact with the first excitation electrode 14a and the second excitation electrode 14b that constitute a pair of excitation electrodes.

[0081] This reduces the obstruction of the semiconductor layer to the vibration of the quartz oscillator and suppresses the deterioration of the vibration characteristics of the quartz oscillator.

[0082] Furthermore, when viewed from the first excitation electrode 14a and the second excitation electrode 14b, the first measuring electrode 24c and the second measuring electrode 24d are farther away than the first connecting electrode 16a and the second connecting electrode 16b. This reduces the parasitic capacitance between the pair of connecting electrodes and the pair of measuring electrodes, as well as the parasitic capacitance between the pair of lead-out electrodes and the pair of measuring electrodes.

[0083] The structure of a quartz oscillator according to other embodiments of the present invention will be described below. Furthermore, in the following embodiments, descriptions of matters identical to those in the first embodiment described above will be omitted, and only the differences will be explained. In particular, the same effects resulting from the same structure will not be mentioned sequentially.

[0084] <Second Implementation>

[0085] Reference Figure 4 The stacked structure 201 of the second embodiment will be described. Figure 4 This is a cross-sectional view schematically showing the structure of the stacked structure of the second embodiment.

[0086] The difference between the stacked structure 201 of the second embodiment and the stacked structure 101 of the first embodiment is that a bottomed recess 229 is formed in the semiconductor layer 221 instead of forming a through hole. The recess 229 has an opening on the lower surface 221B side of the semiconductor layer 221 and a bottom on the upper surface 221A side. That is, the semiconductor layer 220 is configured to be in non-contact with the first excitation electrode 14a and the second excitation electrode 14b, which constitute a pair of excitation electrodes.

[0087] In this implementation, the obstruction of the semiconductor layer to the vibration of the quartz oscillator can be reduced, and the degradation of the vibration characteristics of the quartz oscillator can be suppressed.

[0088] <Third Implementation Method>

[0089] Reference Figure 5 The stacked structure 301 of the third embodiment will be described. Figure 5 This is a cross-sectional view schematically showing the structure of the stacked structure of the third embodiment.

[0090] The third embodiment of the laminated structure 301 differs from the first embodiment of the laminated structure 101 in that it includes an insulating layer 328 between the quartz resonating element 10 and the semiconductor layer 21. The second measuring electrode 24d is disposed between the insulating layer 328 and the semiconductor layer 21, and the first lead-out electrode 15a is disposed between the quartz plate 11 and the insulating layer 328. That is, the insulating layer 328 improves the insulation separation between the first lead-out electrode 15a and the second measuring electrode 24d. Although not illustrated, the insulation separation between the first lead-out electrode 15a and the first measuring electrode 24c is also similarly improved.

[0091] Therefore, it is possible to suppress signal leakage from the excitation electrode to the measuring electrode and suppress the deterioration of the vibration characteristics of the quartz resonator.

[0092] <Fourth Implementation>

[0093] Reference Figure 6 The layered structure 401 of the fourth embodiment will be described. Figure 6 This is a top view schematically illustrating the structure of the stacked structure according to the fourth embodiment. Furthermore, in Figure 6 In this illustration, to easily distinguish between the quartz resonator and the temperature sensing unit, the temperature sensing unit is depicted inside the quartz resonator, but this does not imply that the quartz resonator and the temperature sensing unit have different external dimensions. Similar to the first embodiment, when viewed from above along the +Y′ axis, if the slit SLA described later and the through-hole 29 are ignored, the outer edge of the temperature sensing unit overlaps with the outer edge of the quartz resonator. For Figures 7-9 The descriptions of the quartz vibrating element and temperature sensing unit are also the same.

[0094] The fourth embodiment of the stacked structure 401 differs from the first embodiment of the stacked structure 101 in that the semiconductor layer 21 has a slit SLA.

[0095] The slit SLA opens on both sides of the outer side of the through-hole 29 and the front end 22a, exposing the upper surface 11A of the quartz plate 11. Furthermore, when viewed from above, the slit SLA causes the frame-shaped semiconductor layer 21 to be discontinuous in the circumferential direction. Specifically, when viewed from above, the slit SLA is positioned between the first lead-out electrode 15a and the second lead-out electrode 15b, between the first connecting electrode 16a and the second connecting electrode 16b, between the first measuring electrode 24c and the second measuring electrode 24d, and between the third connecting electrode 16c and the fourth connecting electrode 16d. In other words, the semiconductor layer 21 is discontinuous at the shortest distance between the first measuring electrode 24c and the second measuring electrode 24d, which form a pair of measuring electrodes.

[0096] Therefore, the conductive path of the semiconductor layer, which functions as a resistive element, is formed around the first and second excitation electrodes along the right, rear, and left ends. Compared to a structure where the semiconductor layer is continuous along the shortest distance connecting a pair of measuring electrodes, according to this embodiment, the path length of the semiconductor layer as a resistive element is increased, thus improving the accuracy of measuring changes in the resistance value of the semiconductor layer. Consequently, the accuracy of temperature measurement of the quartz oscillating element is improved.

[0097] <Fifth Implementation>

[0098] Reference Figure 7 The layered structure 501 of the fifth embodiment will be described. Figure 7 This is a top view schematically showing the structure of the stacked structure of the fifth embodiment.

[0099] The fifth embodiment of the stacked structure 501 differs from the fourth embodiment of the stacked structure 401 in that a plurality of slits SLB are formed in the semiconductor layer 21.

[0100] When viewed from above on the upper surface 21A of the semiconductor layer 21, a plurality of slits SLB expose the upper surface 11A of the quartz plate 11. Furthermore, when viewed from the through-hole 29, the plurality of slits SLB open on either the side of the through-hole 29 or the side outside the left end 22d. Similarly, when viewed from the through-hole 29, the plurality of slits SLB open on either the side of the through-hole 29 or the side outside the rear end 22b, and when viewed from the through-hole 29, open on either the side of the through-hole 29 or the side outside the right end 22c.

[0101] Therefore, because the path length of the semiconductor layer, which acts as a resistive element, is increased, the accuracy of measuring changes in the resistance value of the semiconductor layer is improved. Consequently, the accuracy of temperature measurement for quartz resonators is improved.

[0102] <Sixth Implementation Method>

[0103] Reference Figure 8 The layered structure 601 of the sixth embodiment will be described. Figure 8 This is a top view schematically showing the structure of the stacked structure according to the sixth embodiment.

[0104] The sixth embodiment of the stacked structure 601 differs from the fifth embodiment of the stacked structure 501 in that it has a plurality of slits SLB formed along the X-axis direction.

[0105] When viewed from above on the upper surface 21A of the semiconductor layer 21 through the via 29, the plurality of slits SLB open on either the outer side of the front end 22a or the rear end 22b on the left end 22d side. Additionally, when viewed from the via 29, the plurality of slits SLB open on either the outer side of the front end 22a or the rear end 22b on the right end 22c side. When viewed from the via 29, the plurality of slits SLB on the rear end 22b side have the same structure as in the fifth embodiment.

[0106] In this embodiment, the same effect as in the fifth embodiment can also be obtained. Furthermore, as long as the path length of the semiconductor layer serving as the resistive element increases, the shape of the plurality of slits is not limited to the fifth and sixth embodiments. For example, they can be formed along the Z′ axis direction, or at least partially bent.

[0107] <Seventh Implementation>

[0108] Reference Figure 9 The stacked structure 701 of the seventh embodiment will be described. Figure 9 This is a top view schematically showing the structure of the stacked structure according to the seventh embodiment.

[0109] The stacked structure 701 of the seventh embodiment differs from the stacked structure 401 of the fourth embodiment in that the semiconductor layer 21 is formed in a U-shape.

[0110] When viewed from above, the upper surface 21A of the semiconductor layer 21 is provided along the right end 22c, the rear end 22b, and the left end 22d. Furthermore, the semiconductor layer 21 is disposed outside the electrode groups of these quartz resonating elements 10, avoiding the first excitation electrode 14a and the second excitation electrode 14b, the first lead-out electrode 15a and the second lead-out electrode 15b, and the first connecting electrode 16a and the second connecting electrode 16b. Therefore, the insulation separation between the first lead-out electrode 15a and the first measuring electrode 24c, and between the first lead-out electrode 15a and the second measuring electrode 24d, is improved.

[0111] As a result, the path length of the semiconductor layer, which acts as a resistive element, is increased, and signal leakage from the excitation electrode to the measurement electrode is suppressed. Consequently, the accuracy of temperature measurement of the quartz oscillator is improved, and the degradation of the quartz oscillator's vibration characteristics is suppressed.

[0112] <Eighth Implementation Method>

[0113] Reference Figure 10 The quartz vibrating element 810 of the eighth embodiment will be described. Figure 10 This is a perspective view schematically showing the structure of the quartz vibrating element according to the eighth embodiment.

[0114] The quartz resonator 810 of the eighth embodiment differs from the quartz resonator 10 of the first embodiment in that it omits the second connecting electrode and instead electrically connects the second excitation electrode 14b to the third connecting electrode 16c via the second lead electrode 15b.

[0115] The first measuring electrode 24c is electrically connected to the second excitation electrode 14b. Although not shown in the figure, the stacked structure of the eighth embodiment is mounted on the base member via the first conductive holding member 36a, the third conductive holding member 36c, and the fourth conductive holding member 36d. The third connecting electrode 16c serves as both the input terminal for driving vibration to the second excitation electrode 14b and the input terminal for measuring signal to the first measuring electrode 24c. In other words, in temperature detection mode, a measurement signal based on the temperature of the quartz resonator 810 is measured via the semiconductor layer 21 through the third connecting electrode 16c and the fourth connecting electrode 16d. In addition, in signal output mode, a driving signal for driving the quartz resonator 10 is input to the third connecting electrode 16c and the fourth connecting electrode 16d, and the frequency of the oscillation circuit based on the quartz resonator 10 is corrected by temperature compensation based on the measurement results in temperature detection mode.

[0116] <Ninth Implementation Method>

[0117] Reference Figure 11 The quartz vibrating element 910 of the ninth embodiment will be described. Figure 11 This is a perspective view schematically showing the structure of the quartz vibrating element according to the ninth embodiment.

[0118] The quartz vibrating element 910 of the ninth embodiment differs from the quartz vibrating element 10 of the first embodiment in that the first connecting electrode is omitted, and the first excitation electrode 14a is electrically connected to the fourth connecting electrode 16d by the first lead electrode 15a.

[0119] The second measuring electrode 24d is electrically connected to the first excitation electrode 14a. Although not shown in the figure, the stacked structure of the ninth embodiment is mounted on the base component via the second conductivity holding member 36b, the third conductivity holding member 36c, and the fourth conductivity holding member 36d. The fourth connecting electrode 16d also serves as the input terminal for driving vibration to the first excitation electrode 14a and the input terminal for measuring signals to the second measuring electrode 24d.

[0120] <Tenth Implementation>

[0121] Reference Figure 12 The quartz vibrating element A10 of the tenth embodiment will be described. Figure 12 This is a perspective view schematically showing the structure of the quartz vibrating element according to the tenth embodiment.

[0122] The quartz vibrating element A10 of the tenth embodiment differs from the quartz vibrating element 10 of the first embodiment in that it omits the first connecting electrode and the second connecting electrode, electrically connects the second excitation electrode 14b to the third connecting electrode 16c by the second lead electrode 15b, and electrically connects the first excitation electrode 14a to the fourth connecting electrode 16d by the first lead electrode 15a.

[0123] As shown in embodiments eight through ten, at least one of the measuring electrodes in a pair can also be electrically connected to any one of the excitation electrodes in a pair.

[0124] <Eleventh Implementation Method>

[0125] Reference Figure 13 The eleventh embodiment of the stacked structure B01 will be described. Figure 13 This is an exploded perspective view schematically showing the structure of the stacked structure according to the eleventh embodiment.

[0126] The eleventh embodiment of the laminated structure B01 differs from the first embodiment in that a temperature detection unit B20 is laminated on the base component side of the quartz vibrating element B10.

[0127] The quartz vibrating element B10 and the temperature sensing unit B20 are stacked such that the lower surface 11B of the quartz plate 11 faces the upper surface 21A of the semiconductor layer 21. The first lead-out electrode 15a and the second lead-out electrode 15b are electrically connected to the first connecting electrode 16a and the second connecting electrode 16b disposed on the lower surface 21B of the semiconductor layer 21 via through electrodes extending from the upper surface 21A to the lower surface 21B, respectively. The first measuring electrode 24c and the second measuring electrode 24d are disposed on the lower surface 21B of the semiconductor layer 21 and are coupled to the third conductivity holding member 36c and the fourth conductivity holding member 36d (not shown in the figure).

[0128] <Twelfth Implementation>

[0129] Reference Figure 14 The stacked structure C01 of the twelfth embodiment will be described. Figure 14 This is a cross-sectional view schematically showing the structure of the stacked structure according to the twelfth embodiment.

[0130] The stacked structure B01 of the twelfth embodiment differs from the stacked structure 101 of the first embodiment in that the semiconductor layer 21 contacts the first excitation electrode 14a.

[0131] Preferably, the semiconductor layer 21 is thinner than the semiconductor layer 21 in the first embodiment, so as not to impede the vibration of the quartz oscillating element 10.

[0132] Therefore, due to the increased thermal conductivity area of ​​the semiconductor layer and the quartz resonator, the temperature of the quartz resonator can be measured more accurately.

[0133] <Thirteenth Implementation Method>

[0134] Reference Figure 15 The oscillator D99 of the thirteenth embodiment will be described. Figure 15 This is a schematic cross-sectional view showing the structure of the oscillator according to the thirteenth embodiment.

[0135] In addition to the quartz crystal oscillator 100, the oscillator D99 also includes a semiconductor integrated circuit 60. The semiconductor integrated circuit 60 is formed on the upper surface 31A of the substrate 31. The semiconductor integrated circuit 60 includes, for example, an oscillation circuit for oscillating the quartz crystal oscillator 10, a measurement circuit for measuring the temperature of the semiconductor layer 21 based on the resistance value of the semiconductor layer 21 as the temperature of the quartz crystal oscillator 10, a temperature compensation circuit for correcting the frequency of the oscillation circuit based on the measurement results of the measurement circuit, a ROM circuit for storing parameters for temperature compensation, and a voltage generation circuit for providing the necessary power to each circuit.

[0136] In addition, the semiconductor integrated circuit 60 can also be formed on the lower surface 31B of the substrate 31, or on the outside of the quartz oscillator 100.

[0137] The following describes some or all of the embodiments of the present invention and their effects. However, the present invention is not limited to the following descriptions.

[0138] According to one aspect of the present invention, a base component, a cover component, and a laminated structure disposed between the base component and the cover component are provided. The laminated structure includes a piezoelectric vibrating element, a semiconductor layer, and a pair of measuring electrodes. The piezoelectric vibrating element includes a piezoelectric body layer and a pair of excitation electrodes. The piezoelectric body layer has a pair of opposing main surfaces. The pair of excitation electrodes are respectively disposed on the pair of main surfaces of the piezoelectric body layer so as to be opposite each other across the piezoelectric body layer. The semiconductor layer is laminated on any one of the main surfaces of the piezoelectric body layer of the piezoelectric vibrating element. The pair of measuring electrodes are disposed on the semiconductor layer and are configured to measure a signal based on the temperature of the piezoelectric vibrating element via the semiconductor layer.

[0139] As one method, a pair of measuring electrodes measures the resistance of the semiconductor layer.

[0140] Therefore, compared to a structure where the semiconductor layer and the quartz resonator are connected via a conductive holding component to measure the temperature change of resistance, the heat-conducting area of ​​the semiconductor layer and the quartz resonator can be increased. Consequently, the heat conduction rate from the quartz resonator to the semiconductor layer is increased, and the temperature difference between the semiconductor layer and the quartz resonator is reduced. Therefore, the temperature of the quartz resonator can be measured more accurately. Thus, a quartz oscillator capable of outputting a frequency clock with narrow tolerance accuracy can be provided.

[0141] As a method, the stacked structure also includes an insulating layer disposed between the piezoelectric layer and the semiconductor layer.

[0142] Therefore, it is possible to suppress signal leakage from the excitation electrode to the measuring electrode and suppress the deterioration of the vibration characteristics of the quartz resonator.

[0143] In one approach, the semiconductor layer is configured to be non-contact with a pair of excitation electrodes.

[0144] This reduces the obstruction of the semiconductor layer to the vibration of the quartz oscillator and suppresses the deterioration of the vibration characteristics of the quartz oscillator.

[0145] In one way, when viewed from above, the semiconductor layer is discontinuous at the shortest distance between the individual measuring electrodes of a pair of measuring electrodes.

[0146] Therefore, compared to a structure where the semiconductor layer is continuous along the shortest distance connecting a pair of measuring electrodes, the path length of the semiconductor layer as a resistive element is increased, thus improving the accuracy of measuring changes in the resistance value of the semiconductor layer. Consequently, the accuracy of temperature measurement for quartz oscillating elements is improved.

[0147] One approach is to form multiple slits in the semiconductor layer.

[0148] In one approach, the piezoelectric vibrating element also has a pair of connecting electrodes that are electrically connected to a pair of excitation electrodes via lead-out electrodes. When viewed from above the main surface of the piezoelectric body layer of the piezoelectric vibrating element, the pair of measuring electrodes are farther away than the pair of connecting electrodes when viewed from the pair of excitation electrodes.

[0149] This reduces the parasitic capacitance between a pair of connecting electrodes and a pair of measuring electrodes, as well as the parasitic capacitance between a pair of lead-out electrodes and a pair of measuring electrodes.

[0150] In one manner, at least one of the measuring electrodes in a pair is electrically connected to either of the excitation electrodes in a pair.

[0151] As one approach, an oscillator is provided, which also includes a measurement circuit that measures the temperature of the piezoelectric vibrating element based on signals obtained from a semiconductor layer by a pair of measurement electrodes.

[0152] As a method, a temperature compensation circuit is also provided, which compensates for the frequency of the piezoelectric vibrating element based on the measurement circuit.

[0153] As described above, according to one aspect of the present invention, it is possible to provide a piezoelectric vibrator with improved temperature compensation accuracy and an oscillator having the piezoelectric vibrator.

[0154] Furthermore, the embodiments described above are for the purpose of easily understanding the embodiments of the present invention and are not intended to limit the interpretation of the embodiments of the present invention. The present invention can be modified / improved without departing from its spirit, and its equivalents are also included in the present invention. That is, as long as it possesses the features of the present invention, embodiments obtained by appropriate design modifications made to each embodiment by those skilled in the art are also included in the scope of the present invention. For example, the elements, their configurations, materials, conditions, shapes, dimensions, etc., of each embodiment are not limited to the examples and can be appropriately modified. For example, the vibration element and oscillator of the present invention can be used in timing devices or load sensors. In addition, the elements of each embodiment can be combined as long as it is technically permissible, and embodiments formed by combining these elements as long as they contain the features of the present invention are also included in the scope of the present invention.

[0155] Explanation of reference numerals in the attached figures

[0156] 100… Quartz oscillator, 10… Quartz vibrating element, 11… Quartz plate, 11A… Upper surface of quartz plate, 11B… Lower surface of quartz plate, 14a… First excitation electrode, 14b… Second excitation electrode, 15a… First lead-out electrode, 15b… Second lead-out electrode, 16a… First connecting electrode, 16b… Second connecting electrode, 16c… Third connecting electrode, 16d… Fourth connecting electrode, 20… Temperature detection section, 21… Semiconductor layer, 21A… Upper surface of semiconductor layer, 21B… Lower surface of semiconductor layer, 22a… Front end, 22b… Rear end, 22c… Right end, 22d… Left end, 24c… First measuring electrode, 24d… Second measuring electrode, 29… Through hole.

Claims

1. A piezoelectric vibrator comprising a base component, a cover component, and a laminated structure disposed between the base component and the cover component. The aforementioned stacked structure has the following features: A piezoelectric vibration element comprises a piezoelectric body layer and a pair of excitation electrodes, wherein... The piezoelectric layer has a pair of opposing main surfaces, and the pair of excitation electrodes are respectively disposed on the pair of main surfaces of the piezoelectric layer so as to be opposite to each other across the piezoelectric layer; A semiconductor layer is stacked on any one of the main surfaces of the piezoelectric layer of the piezoelectric vibrating element; and A pair of measuring electrodes are disposed on the aforementioned semiconductor layer. The aforementioned pair of measuring electrodes are configured to measure a signal based on the temperature of the aforementioned piezoelectric vibration element via the aforementioned semiconductor layer. Multiple slits are formed in the aforementioned semiconductor layer.

2. The piezoelectric oscillator according to claim 1, wherein, The aforementioned pair of measuring electrodes measures the resistance value of the aforementioned semiconductor layer.

3. The piezoelectric oscillator according to claim 1 or 2, wherein, The aforementioned stacked structure also includes an insulating layer disposed between the piezoelectric layer and the semiconductor layer.

4. The piezoelectric oscillator according to claim 1 or 2, wherein, The aforementioned semiconductor layer is configured to be in non-contact with the aforementioned pair of excitation electrodes.

5. The piezoelectric oscillator according to claim 1 or 2, wherein, When viewed from above, the semiconductor layer is discontinuous at the shortest distance connecting the pair of measuring electrodes.

6. The piezoelectric oscillator according to claim 1 or 2, wherein, The aforementioned piezoelectric vibration element also has a pair of connecting electrodes, which are electrically connected to the pair of excitation electrodes via lead-out electrodes. When viewed from above the main surface of the piezoelectric layer of the piezoelectric vibrating element, the pair of measuring electrodes are farther away than the pair of connecting electrodes when viewed from the pair of excitation electrodes.

7. The piezoelectric oscillator according to claim 1 or 2, wherein, At least one of the aforementioned pair of measuring electrodes is electrically connected to any one of the aforementioned pair of excitation electrodes.

8. An oscillator comprising: The piezoelectric vibrator according to any one of claims 1 to 7; and The measuring circuit measures the temperature of the piezoelectric vibration element based on the signal obtained from the semiconductor layer by the pair of measuring electrodes.

9. The oscillator according to claim 8, wherein, It also has a temperature compensation circuit, which compensates for the frequency of the piezoelectric vibration element based on the measurement results of the measurement circuit.

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