Power divider, power divider chip and electronic equipment

Abstract

The present application belongs to the technical field of power dividers, and provides a power divider, a power divider chip and an electronic device, wherein the power divider includes: a radio frequency input terminal, a first capacitor unit, a first inductor unit, a first impedance matching unit, a first radio frequency output terminal, a fourth capacitor unit, a second inductor unit, a second impedance matching unit, a second radio frequency output terminal and an isolation unit, wherein the radio frequency input terminal is used to receive an input signal, the first impedance matching unit is used to adjust the impedance of the first radio frequency output terminal to reduce the reflected signal of the first radio frequency output terminal, the second impedance matching unit is used to adjust the impedance of the first radio frequency output terminal to reduce the reflected signal of the second radio frequency output terminal, and the isolation unit is used to isolate the first radio frequency output terminal and the second radio frequency output terminal, thereby solving the problems of large size, large insertion loss and poor isolation effect of the existing power divider.

Description

Technical Field

[0001] The present application belongs to the technical field of power dividers, and in particular, relates to a power divider, a power divider chip and an electronic device. Background Art

[0002] A power splitter is a device that divides an input signal into two or more output signals of equal power. It can also combine the power of multiple signals into one output, so it is often called a splitter / combiner. Power splitters are widely used in microwave circuits and are an important component for radar and relay communication systems to obtain maximum power. With the development of filters, antennas and power amplifiers, the requirements for power splitters are getting higher and higher, and the demand for high-performance power splitters is also increasing. In radio transmitting equipment, power distribution technology is usually used to divide a radio frequency signal into multiple channels using a power splitter, and then use a power amplifier to amplify each signal separately, and finally use a power splitter to combine these multiple signals into one radio frequency signal. This is an effective way to obtain higher output power.

[0003] However, existing power dividers have problems such as large size, large insertion loss and poor isolation effect. Summary of the invention

[0004] In order to solve the above technical problems, the embodiments of the present application provide a power divider, a power divider chip and an electronic device, which can solve the problems of large size, large insertion loss and poor isolation effect of existing power dividers.

[0005] A first aspect of an embodiment of the present application provides a power divider, the power divider further comprising:

[0006] A radio frequency input terminal, used for receiving an input signal;

[0007] a first capacitor unit;

[0008] A first inductor unit, wherein a first end of the first inductor unit and a first end of the first capacitor unit are connected to the RF input terminal, and a second end of the first capacitor unit is grounded;

[0009] a first impedance matching unit, wherein a first end of the first impedance matching unit is connected to a second end of the first inductor unit;

[0010] A first RF output terminal is connected to the second terminal of the first impedance matching unit, wherein the first impedance matching unit is used to adjust the impedance of the first RF output terminal to reduce the reflected signal of the first RF output terminal;

[0011] a fourth capacitor unit;

[0012] a second inductor unit, wherein a first end of the second inductor unit and a first end of the fourth capacitor unit are commonly connected to the RF input end, and a second end of the fourth capacitor unit is grounded;

[0013] a second impedance matching unit, wherein a first end of the second impedance matching unit is connected to a second end of the second inductor unit;

[0014] a second RF output terminal connected to the second end of the second impedance matching unit, wherein the second impedance matching unit is used to adjust the impedance of the second RF output terminal to reduce the reflected signal of the second RF output terminal; and

[0015] The isolation unit is provided between the first RF output terminal and the second RF output terminal, and is used to isolate the first RF output terminal from the second RF output terminal.

[0016] In one embodiment, the first capacitor unit, the first inductor unit, the fourth capacitor unit, the second inductor unit, the first impedance matching unit, the second impedance matching unit and the isolation unit are generated on a substrate layer using thin film integrated passive device IPD technology.

[0017] In one embodiment, the first inductor unit is a planar spiral inductor; and / or

[0018] The second inductor unit is a planar spiral inductor.

[0019] In one embodiment, the isolation unit includes: at least one isolation resistor; wherein,

[0020] The first end of the at least one isolation resistor is respectively connected to the first end of the first impedance matching unit and the second end of the first inductance unit, and the second end of the at least one isolation resistor is respectively connected to the first end of the second impedance matching unit and the second end of the second inductance unit.

[0021] In one embodiment, the first impedance matching unit includes: a first resistor, a second resistor, a third resistor and a second capacitor; wherein,

[0022] The first end of the third resistor is grounded, the second end of the third resistor is respectively connected to the first end of the second resistor, the second end of the first inductor unit and the first end of the isolation unit, the second end of the second resistor is connected to the second end of the first resistor and the first RF output end, the first end of the first resistor is grounded, and the second capacitor is connected in parallel with the second resistor.

[0023] In one embodiment, the second impedance matching unit includes: a fifth resistor, a sixth resistor, a seventh resistor and a third capacitor; wherein,

[0024] The first end of the fifth resistor is grounded, the second end of the fifth resistor is respectively connected to the first end of the sixth resistor, the second end of the second inductance unit and the second end of the isolation unit, the second end of the sixth resistor is connected to the second end of the seventh resistor and the second RF output end, the first end of the seventh resistor is grounded, and the third capacitor is connected in parallel with the sixth resistor.

[0025] In one embodiment, the length of the RF input terminal, the first RF output terminal and the second RF output terminal pads are all 50 μm-150 μm, and the width of the RF input terminal, the first RF output terminal and the second RF output terminal pads are all 50 μm-150 μm.

[0026] In one embodiment, the first capacitor unit and the fourth capacitor unit are both passive capacitors; wherein,

[0027] The first capacitor unit and the fourth capacitor unit are both metal-dielectric-metal structures.

[0028] A second aspect of an embodiment of the present application provides a power splitter chip, the power splitter chip comprising:

[0029] substrate layer;

[0030] A protective layer; and a power divider as described in any of the above items, wherein the power divider is arranged between the substrate layer and the protective layer.

[0031] A third aspect of an embodiment of the present application provides an electronic device, comprising a power divider as described in any one of the above items.

[0032] The embodiment of the present application provides a power divider, a power divider chip and an electronic device, wherein the power divider includes: an RF input terminal, a first capacitor unit, a first inductor unit, a first impedance matching unit, a first RF output terminal, a second capacitor, a second inductor unit, a second impedance matching unit, a second RF output terminal and an isolation unit, wherein the RF input terminal is used to receive an input signal, the first end of the first inductor unit and the first end of the first capacitor unit are connected to the RF input terminal, the second end of the first capacitor unit is grounded, the first end of the first impedance matching unit is connected to the second end of the first inductor unit, and the first RF output terminal is connected to the second end of the first impedance matching unit, wherein the first impedance matching unit is used to adjust the first The invention discloses an embodiment of the invention discloses an impedance matching unit for adjusting the impedance of a radio frequency output terminal to reduce the reflected signal of a first radio frequency output terminal, wherein the first end of the second inductor unit and the first end of the second capacitor are connected to the radio frequency input terminal, the second end of the second capacitor is grounded, the first end of the second impedance matching unit is connected to the second end of the second inductor unit, and the second radio frequency output terminal is connected to the second end of the second impedance matching unit, wherein the second impedance matching unit is used to adjust the impedance of the first radio frequency output terminal to reduce the reflected signal of the second radio frequency output terminal, and the isolation unit is provided between the first radio frequency output terminal and the second radio frequency output terminal to isolate the first radio frequency output terminal and the second radio frequency output terminal, which can solve the problems of large size, large insertion loss and poor isolation effect of the existing power divider. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 is a schematic diagram of the principle of a power divider provided by an embodiment of the present application;

[0034] Figure 2 is a schematic diagram of the structure of a power divider provided by an embodiment of the present application;

[0035] Figure 3 is a graph of insertion loss and frequency of a power divider provided by an embodiment of the present application;

[0036] Figure 4 is a curve diagram of voltage standing wave ratio and frequency of a power divider provided in one embodiment of the present application;

[0037] Figure 5 This is a graph showing the isolation and frequency of a power divider provided in one embodiment of the present application. DETAILED DESCRIPTION

[0038] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0039] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0040] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0041] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "plurality" means one or more, unless otherwise clearly and specifically defined.

[0042] In recent years, there has been an increasing demand for miniaturized, low-power, high-performance devices in microwave systems. The integrated passive device (IPD) process has greatly reduced the size of passive devices, reduced the complexity of passive device packaging, and brought high performance and good system stability to RF circuits. These advantages of the IPD process have attracted much attention in recent years and have gradually become an important solution for the miniaturization of mobile communication equipment. Compared with integrated processes such as LTCC, thin-film IPD technology has a high degree of integration, small process errors, and more passive device values ​​such as capacitance and inductance to choose from. IPD devices are generally used in modules related to handheld or portable wireless communication devices. For example, GSM / DCS / PCS, WCDMA, WLAN (Wi-Fi), Bluetooth, WiMax, and UWB, many passive RF modules such as equalization filters, baluns, duplexers, couplers, impedance matching circuits, and power dividers / synthesizers can also be implemented using IPD technology.

[0043] On the other hand, with the development of filters, antennas and power amplifiers, the requirements for power dividers are getting higher and higher, and the demand for high-performance power dividers is also increasing. In radio transmission equipment, power distribution technology is usually used to divide one RF signal into multiple channels using a power divider, and then use a power amplifier to amplify each signal separately, and finally use a power divider to combine these multiple signals into one RF signal. This is an effective way to obtain higher output power. However, with the high integration and wide bandwidth of microwave circuits, traditional Wilkinson power dividers can no longer meet the design requirements of RF circuits. Existing power dividers have problems such as large size, large insertion loss and poor isolation effect.

[0044] In order to solve the above technical problems, the present application embodiment provides a power divider, see Figure 1 As shown, the power divider includes: an RF input terminal 10, a first capacitor unit 20, a first inductor unit 30, a first impedance matching unit 40, a first RF output terminal 50, a fourth capacitor unit 60, a second inductor unit 70, a second impedance matching unit 80, a second RF output terminal 90 and an isolation unit 100.

[0045] Specifically, the RF input terminal 10 is used to receive an input signal, the first end of the first inductor unit 30 and the first end of the first capacitor unit 20 are commonly connected to the RF input terminal 10, the second end of the first capacitor unit 20 is grounded, the first end of the first impedance matching unit 40 is connected to the second end of the first inductor unit 30, the first RF output terminal 50 is connected to the second end of the first impedance matching unit 40, wherein the first impedance matching unit 40 is used to adjust the impedance of the first RF output terminal 50 to reduce the reflected signal of the first RF output terminal 50, the first end of the second inductor unit 70 and the first end of the fourth capacitor unit 60 are commonly connected to the RF input terminal 10, and the second end of the fourth capacitor unit 60 is connected to the ground. The first end of the second impedance matching unit 80 is connected to the second end of the second inductor unit 70, and the second RF output terminal 90 is connected to the second end of the second impedance matching unit 80, wherein the second impedance matching unit 80 is used to adjust the impedance of the second RF output terminal 90 to reduce the reflected signal of the second RF output terminal 90, and the isolation unit 100 is arranged between the first RF output terminal 50 and the second RF output terminal 90, and the isolation unit 100 is used to isolate the first RF output terminal 50 and the second RF output terminal 90. By setting the isolation unit 100, the first RF output terminal 50 is isolated from the second RF output terminal 90, thereby solving the problem of poor isolation effect of the existing power divider.

[0046] In this embodiment, the RF input terminal 10 can be used for power input or power output. For example, when the RF input terminal 10 is used for power input, the first RF output terminal 50 and the second RF output terminal 90 are used for power output. At this time, the power divider plays a role of power distribution. When the RF input terminal 10 is used for power output, the first RF output terminal 50 and the second RF output terminal 90 are used for power input. At this time, the power divider plays a role of power synthesis. The power divider can play different roles according to different application requirements, thereby increasing the application scenarios of the power divider.

[0047] In this embodiment, reference Figure 2 As shown, the second end of the first capacitor unit 20 is grounded, and the second end of the fourth capacitor unit 60 is grounded. Specifically, the second ends of the first capacitor unit 20 and the fourth capacitor unit 60 can be grounded through the grounding through hole Via on the power divider, wherein the first capacitor unit 20 and the fourth capacitor unit 60 can connect the grounding end to a grounding through hole Via and then be grounded together, and the first capacitor unit 20 and the fourth capacitor unit 60 can also be grounded respectively through separate grounding through holes Via.

[0048] In this embodiment, the first impedance matching unit 40 is used to adjust the impedance of the first RF output terminal 50 to reduce the reflected signal of the first RF output terminal 50, and the second impedance matching unit 80 is used to adjust the impedance of the second RF output terminal 90 to reduce the reflected signal of the second RF output terminal 90. Specifically, in a circuit provided with resistors, the resistors will hinder the current in the circuit, and this resistance is called impedance. The first impedance matching unit 40 and the second impedance matching unit 80 can be provided to adjust the impedance of the first RF output terminal 50 and the second RF output terminal 90. By adjusting the impedance of the first RF output terminal 50 and the second RF output terminal 90, the reflected signal of the first RF output terminal 50 and the second RF output terminal 90 can be reduced. Because during the propagation of the signal in the transmission line, once the instantaneous impedance of the transmission line sensed changes, transmission will inevitably occur. The reflection is caused by the change of the instantaneous impedance of the transmission line. Therefore, by adjusting the impedance of the first RF output terminal 50 and the second RF output terminal 90, the reflected signal of the RF output terminal can be effectively reduced, so that the power divider can output power more efficiently. The first impedance matching unit 40 and the second impedance matching unit 80 improve the isolation of the power divider circuit (the larger the isolation value, the better) and the voltage standing wave ratio performance (the closer the voltage standing wave ratio value is to 1, the better the voltage standing wave ratio performance).

[0049] In this embodiment, the isolation unit 100 is used to isolate the first RF output terminal 50 and the second RF output terminal 90. The isolation unit 100 is arranged between the first RF output terminal 50 and the second RF output terminal 90, and a voltage drop exists between the first RF output terminal 50 and the second RF output terminal 90, so that the signal current between the first RF output terminal 50 and the second RF output terminal 90 is prevented from flowing into each other's output terminal, and the mutual influence between the first RF output terminal 50 and the second RF output terminal 90 is reduced, so that the circuit output is more stable, and the isolation between the first RF output terminal 50 and the second RF output terminal 90 is improved.

[0050] In one embodiment, reference Figure 2 As shown, the first capacitor unit 20 can be a first capacitor C1, the first inductor unit 30 can be a first inductor L1, the fourth capacitor unit 60 can be a fourth capacitor C4, and the second inductor unit 70 can be a second inductor L2. On the premise of ensuring the performance of the power divider, the space of the power divider can be saved, the power divider can be made more miniaturized, and the volume occupied by the power divider can be reduced.

[0051] In one embodiment, see Figure 2 As shown, the first capacitor unit 20, the first inductor unit 30, the fourth capacitor unit 60, the second inductor unit 70, the first impedance matching unit 40, the second impedance matching unit 80 and the isolation unit 100 are generated on the substrate layer by using the thin film integrated passive device IPD technology, and different patterns are etched out by using the photolithography technology to form different devices, thereby realizing high-density integration of various passive components such as resistors, capacitors, inductors, filters, couplers, etc. Compared with the traditional bulky discrete passive components, it saves the space of the circuit board, makes the power divider more miniaturized, and reduces the volume occupied by the power divider. At the same time, the use of the thin film integrated passive device IPD technology also makes the electrical performance of the power divider better and the manufacturing cost lower.

[0052] In one embodiment, see Figure 2 As shown, the first inductor unit 30 is a planar spiral inductor; and / or the second inductor unit 70 is a planar spiral inductor.

[0053] Specifically, the first inductor unit 30 and the second inductor unit 70 can both be planar spiral inductors, wherein the number of turns of the first inductor unit 30 and the second inductor unit 70 are both 4.5 turns. By setting the first inductor unit 30 and the second inductor unit 70 as planar spiral inductors, the space of the power divider can be saved while ensuring the performance of the power divider, making the power divider more miniaturized and reducing the volume occupied by the power divider.

[0054] In one embodiment, see Figure 2 As shown, the isolation unit 100 includes: at least one isolation resistor.

[0055] Specifically, the first end of at least one isolation resistor is respectively connected to the first end of the first impedance matching unit 40 and the second end of the first inductor unit 30, and the second end of at least one isolation resistor is respectively connected to the first end of the second impedance matching unit 80 and the second end of the second inductor unit 70. By providing at least one isolation resistor and using the voltage drop characteristic of at least one resistor, it is avoided that the signal current between the first RF output terminal 50 and the second RF output terminal 90 flows into the output terminal of the other party, and the mutual influence between the first RF output terminal 50 and the second RF output terminal 90 is reduced, so that the circuit output is more stable, and the isolation between the first RF output terminal 50 and the second RF output terminal 90 is improved.

[0056] In one embodiment, see Figure 2 As shown, the at least one isolation resistor may be a fourth resistor R4.

[0057] In one embodiment, see Figure 2 As shown, the first impedance matching unit 40 includes: a first resistor R1, a second resistor R2, a third resistor R3 and a second capacitor C2.

[0058] Specifically, the first end of the third resistor R3 is grounded, the second end of the third resistor R3 is respectively connected to the first end of the second resistor R2, the second end of the first inductor unit 30 and the first end of the isolation unit 100, the second end of the second resistor R2 is connected to the second end of the first resistor R1 and the first RF output terminal 50, the first end of the first resistor R1 is grounded, and the second capacitor C2 is connected in parallel with the second resistor R2.

[0059] In this embodiment, when the RF input terminal 10 is used as a power input, the first RF output terminal 50 is used as a power output, and the input signal is connected through the RF input terminal 10, and is transmitted to the first impedance matching unit 40 through the first inductor unit 30. The first resistor R1, the second resistor R2 and the third resistor R3 in the first impedance matching unit 40 adjust the impedance of the input signal in the circuit to achieve matching impedance, which can reduce the reflected signal of the first RF output terminal 50. Because during the propagation of the signal in the transmission line, once the instantaneous impedance of the transmission line changes, transmission will inevitably occur, and the reflection is caused by the instantaneous impedance change of the transmission line. Therefore, the first resistor R1, the second resistor R2 and the third resistor R3 are set to adjust the first RF output terminal 50, which can effectively reduce the reflected signal of the RF output terminal, so that the first RF output terminal 50 can output power more efficiently.

[0060] In one embodiment, reference Figure 2 As shown, the second impedance matching unit 80 includes: a fifth resistor R5, a sixth resistor R6, a seventh resistor R7 and a third capacitor C3.

[0061] Specifically, the first end of the fifth resistor R5 is grounded, the second end of the fifth resistor R5 is respectively connected to the first end of the sixth resistor R6, the second end of the second inductance unit 70 and the second end of the isolation unit 100, the second end of the sixth resistor R6 is connected to the second end of the seventh resistor R7 and the second RF output terminal 90, the first end of the seventh resistor R7 is grounded, and the third capacitor C3 is connected in parallel with the sixth resistor R6.

[0062] In this embodiment, when the RF input terminal 10 is used as a power input and the second RF output terminal 90 is used as a power output, the input signal is connected through the RF input terminal 10 and transmitted to the second impedance matching unit 80 through the second inductor unit 70. The fifth resistor R5, the sixth resistor R6 and the seventh resistor R7 in the second impedance matching unit 80 adjust the impedance of the input signal in the circuit to achieve matching impedance, which can reduce the reflected signal of the second RF output terminal 90. Because during the propagation of the signal in the transmission line, once the instantaneous impedance of the transmission line changes, transmission will inevitably occur, and the reflection is caused by the instantaneous impedance change of the transmission line. Therefore, the fifth resistor R5, the sixth resistor R6 and the seventh resistor R7 are set to adjust the second RF output terminal 90, which can effectively reduce the reflected signal of the RF output terminal, so that the second RF output terminal 90 can output power more efficiently.

[0063] In one embodiment, the length of the pads at the RF input terminal 10, the first RF output terminal 50 and the second RF output terminal 90 are all 50 μm-150 μm, and the width of the pads at the RF input terminal 10, the first RF output terminal 50 and the second RF output terminal 90 are all 50 μm-150 μm.

[0064] Specifically, in the present embodiment, the length of the pads of the RF input terminal 10, the first RF output terminal 50 and the second RF output terminal 90 is set to 50μm-150μm, and the width of the pads of the RF input terminal 10, the first RF output terminal 50 and the second RF output terminal 90 is set to 50μm-150μm. On the premise of ensuring the performance of the power divider, the space of the power divider can be saved, the power divider can be made more miniaturized, and the volume occupied by the power divider can be reduced.

[0065] In one embodiment, the first capacitor unit 20 and the fourth capacitor unit 60 are both passive capacitors; wherein the first capacitor unit 20 and the fourth capacitor unit 60 are both metal-dielectric-metal structures, and the second capacitor C2 and the third capacitor C3 are both passive capacitors; wherein the second capacitor C2 and the third capacitor C3 are both metal-dielectric-metal structures.

[0066] In one embodiment, the size of the grounding through hole Via of the power divider is 84×84um. Setting the size of the grounding through hole Via to 84×84um can save the space of the power divider, make the power divider more miniaturized, and reduce the volume occupied by the power divider while ensuring the performance of the power divider.

[0067] In one embodiment, the first capacitor unit 20 and the first inductor unit 30 are symmetrical with the fourth capacitor unit 60 and the second inductor unit 70 respectively with respect to the midline of the RF input terminal 10, and the sizes and capacitance values ​​of the first capacitor unit 20 and the fourth capacitor unit 60 are the same, and the parameters such as the number of turns, radius, line width and line spacing of the first inductor unit 30 and the second inductor unit 70 are all the same. The impedance of the power divider is matched by the combined use of inductors and capacitors, which improves the voltage standing wave ratio performance of the power divider. Moreover, compared with the traditional impedance matching through the impedance value of the wire, it can effectively reduce the volume of the power divider and miniaturize the power divider circuit. The symmetrical structure layout is adopted to greatly reduce the layout area. The power divider has the advantages of high integration, small layout area, small insertion loss, wide bandwidth, high isolation, high reliability and stable performance.

[0068] In one embodiment, see Figure 2 As shown, the first resistor R1 and the third resistor R3 are symmetrical with the fifth resistor R5 and the seventh resistor R7 respectively relative to the midline of the RF input terminal 10, the sizes and resistance values ​​of the first resistor R1, the third resistor R3, the fifth resistor R5 and the seventh resistor R7 are the same, the second resistor R2 and the sixth resistor R6 are symmetrical relative to the midline of the RF input terminal 10, and the sizes and resistance values ​​of the second resistor R2 and the sixth resistor R6 are the same, the second capacitor C2 and the third capacitor C3 are symmetrical relative to the midline of the RF input terminal 10, and the sizes and capacitance values ​​of the second capacitor C2 and the third capacitor C3 are the same, so that the power divider is more miniaturized under the premise of meeting low insertion loss, low voltage standing wave ratio and low isolation, and a symmetrical structure is used for layout, which greatly reduces the layout area.

[0069] In one embodiment, the second end of the first inductor unit 30 is connected to the first end of the first impedance matching unit 40 through an air bridge, and the second end of the second inductor unit 70 is connected to the first end of the second impedance matching unit 80 through an air bridge, because in high-frequency and ultra-high-frequency devices, it is necessary to reduce the parasitic capacitance of the metal electrode lead to improve the sensitivity of the device. Since the dielectric constant of air is close to 1, the use of the air bridge method to realize the metal electrode lead can greatly reduce the parasitic capacitance, and by setting the air bridge, a low thermal resistance connection and a heat dissipation channel can also be provided for the electrode lead.

[0070] In one embodiment, Figure 3 is based on Figure 1 The data curve diagram is obtained by simulating the circuit schematic diagram of the power divider shown. Figure 2 The frequency and insertion loss curves of the power divider in this embodiment are shown, wherein the S21 curve represents the insertion loss of the input signal from the RF input terminal 10 to the first RF output terminal 50, and the S31 curve represents the insertion loss of the input signal from the RF input terminal 10 to the second RF output terminal 90. It can be seen from the figure that S21 and S31 basically coincide, and the insertion loss of the power divider is lower than 8.23dB.

[0071] In one embodiment, Figure 4 is based on Figure 1 The data curve diagram is obtained by simulating the circuit schematic diagram of the power divider shown. Figure 3 The frequency and voltage standing wave ratio curves of the power divider in this embodiment are shown, wherein the VSWR1 curve represents the voltage standing wave ratio measured at the first RF output terminal 50 of the power divider, the VSWR2 curve represents the voltage standing wave ratio measured at the second RF output terminal 90 of the power divider, and the VSWR3 curve represents the voltage standing wave ratio measured at the RF input terminal 10 of the power divider. It can be seen from the figure that the VSWR1 curve and the VSWR2 curve basically overlap, and the voltage standing wave ratios VSWR1, VSWR2 and VSWR3 are all less than 1.6.

[0072] In one embodiment, Figure 5 is based on Figure 1 The data curve diagram is obtained by simulating the circuit schematic diagram of the power divider shown. Figure 4 The frequency and isolation curve of the power divider in this embodiment is shown, wherein the S32 curve represents the corresponding relationship between the frequency and isolation of the first RF output terminal 50 and the second RF output terminal 90 of the power divider, wherein the isolation is greater than 14.85dB.

[0073] An embodiment of the present application further provides a power divider chip, the power divider chip comprising: a substrate layer and a protective layer; and a power divider as described in any one of the above items, wherein the power divider is arranged between the substrate layer and the protective layer.

[0074] In one embodiment, the frequency range of the power divider chip is DC to 1.5 GHz.

[0075] In one embodiment, the material of the substrate layer may be gallium arsenide.

[0076] An embodiment of the present application further provides an electronic device, the electronic device comprising the power divider as described in any one of the above items.

[0077] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional units and circuits is used as an example for illustration. In practical applications, the above-mentioned functions can be assigned to different functional units and circuits as needed, that is, the internal structure of the device can be divided into different functional units or circuits to complete all or part of the functions described above. The functional units and circuits in the embodiments can be integrated into a processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The above-mentioned integrated units can be implemented in the form of hardware or in the form of software functional units. In addition, the specific names of the functional units and circuits are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of this application. The specific working process of the units and circuits in the above-mentioned system can refer to the corresponding process in the aforementioned method embodiment, which will not be repeated here.

[0078] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described or recorded in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0079] Those of ordinary skill in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0080] In the embodiments provided in the present application, it should be understood that the disclosed devices / terminal equipment and methods can be implemented in other ways. For example, the device / terminal equipment embodiments described above are only schematic, for example, the division of circuits or units is only a logical function division, and there may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0081] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0082] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0083] If the integrated circuit / unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the present application implements all or part of the processes in the above-mentioned embodiment method, and can also be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium, and the computer program can implement the steps of the above-mentioned various method embodiments when executed by the processor. Among them, the computer program includes computer program code, and the computer program code can be in source code form, object code form, executable file or some intermediate form. The computer-readable medium may include: any entity or device capable of carrying computer program code, recording medium, U disk, mobile hard disk, disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electric carrier signal, telecommunication signal and software distribution medium. It should be noted that the content contained in the computer-readable medium can be appropriately increased or decreased according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, the computer-readable medium does not include electric carrier signals and telecommunication signals.

[0084] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. A power divider, characterized in that: The power divider comprises: A radio frequency input terminal, used for receiving an input signal; a first capacitor unit; A first inductor unit, wherein a first end of the first inductor unit and a first end of the first capacitor unit are connected to the RF input terminal, and a second end of the first capacitor unit is grounded; a first impedance matching unit, wherein a first end of the first impedance matching unit is connected to a second end of the first inductor unit; A first RF output terminal is connected to the second terminal of the first impedance matching unit, wherein the first impedance matching unit is used to adjust the impedance of the first RF output terminal to reduce the reflected signal of the first RF output terminal; a fourth capacitor unit; a second inductor unit, wherein a first end of the second inductor unit and a first end of the fourth capacitor unit are commonly connected to the RF input end, and a second end of the fourth capacitor unit is grounded; a second impedance matching unit, wherein a first end of the second impedance matching unit is connected to a second end of the second inductor unit; a second RF output terminal connected to the second end of the second impedance matching unit, wherein the second impedance matching unit is used to adjust the impedance of the second RF output terminal to reduce the reflected signal of the second RF output terminal; and an isolation unit, provided between the first RF output terminal and the second RF output terminal, and used to isolate the first RF output terminal and the second RF output terminal; the isolation unit comprises: at least one isolation resistor, a first end of the at least one isolation resistor is respectively connected to the first end of the first impedance matching unit and the second end of the first inductance unit, and a second end of the at least one isolation resistor is respectively connected to the first end of the second impedance matching unit and the second end of the second inductance unit; The first impedance matching unit includes: a first resistor, a second resistor, a third resistor and a second capacitor; wherein, The first end of the third resistor is grounded, the second end of the third resistor is respectively connected to the first end of the second resistor, the second end of the first inductor unit and the first end of the isolation unit, the second end of the second resistor is connected to the second end of the first resistor and the first RF output end, the first end of the first resistor is grounded, and the second capacitor is connected in parallel with the second resistor.

2. The power divider according to claim 1, characterized in that: The first capacitor unit, the first inductor unit, the fourth capacitor unit, the second inductor unit, the first impedance matching unit, the second impedance matching unit and the isolation unit are generated on a substrate layer by using a thin film integrated passive device (IPD) technology.

3. The power divider according to claim 1, characterized in that: The first inductor unit is a planar spiral inductor; and / or The second inductor unit is a planar spiral inductor.

4. The power divider according to claim 1, characterized in that: The second impedance matching unit includes: a fifth resistor, a sixth resistor, a seventh resistor and a third capacitor; wherein, The first end of the fifth resistor is grounded, the second end of the fifth resistor is respectively connected to the first end of the sixth resistor, the second end of the second inductance unit and the second end of the isolation unit, the second end of the sixth resistor is connected to the second end of the seventh resistor and the second RF output end, the first end of the seventh resistor is grounded, and the third capacitor is connected in parallel with the sixth resistor.

5. The power divider according to claim 1, characterized in that: The length of the RF input terminal, the first RF output terminal and the second RF output terminal pads are all 50 μm-150 μm, and the width of the RF input terminal, the first RF output terminal and the second RF output terminal pads are all 50 μm-150 μm.

6. The power divider according to claim 2, characterized in that: The first capacitor unit and the fourth capacitor unit are both passive capacitors; wherein, The first capacitor unit and the fourth capacitor unit are both metal-dielectric-metal structures.

7. A power divider chip, characterized in that: The power divider chip comprises: substrate layer; A protective layer; and a power divider as described in any one of claims 1 to 6, wherein the power divider is arranged between the substrate layer and the protective layer.

8. An electronic device, characterized in that: The electronic device comprises the power divider as described in any one of claims 1-6.

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