Substrate processing apparatus and substrate processing system provided with the same

Abstract

A substrate processing apparatus and a substrate processing system provided with the substrate processing apparatus capable of changing the number of heat treatment chambers such as an annealing chamber are provided. The substrate processing apparatus includes a first chamber that heat-treats a substrate and a second chamber that processes the substrate in a manner other than heat treatment, wherein the number of the first chamber is changed depending on the number of the second chamber that heat-treats the substrate as needed.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing system equipped with the substrate processing apparatus. More specifically, it relates to a substrate processing apparatus having a heat treatment chamber and a substrate processing system equipped with the substrate processing apparatus. Background Technology

[0002] The process of manufacturing semiconductor devices can be performed continuously in semiconductor manufacturing equipment and can be divided into front-end processes and back-end processes. Semiconductor manufacturing equipment can be set up in a space defined as a factory (FAB) to manufacture semiconductor devices.

[0003] Front-end processes refer to the processes of forming circuit patterns on a wafer to complete a chip. Front-end processes can include: deposition processes to form thin films on the wafer; photolithography processes to transfer photoresist onto the thin films using photomasks; etching processes to selectively remove unwanted portions using chemical materials or reactive gases to form the desired circuit patterns on the wafer; ashing processes to remove residual photoresist after etching; ion implantation processes to implant ions into portions connected to the circuit patterns to give them the characteristics of electronic components; and cleaning processes to remove contaminants from the wafer.

[0004] Post-processing refers to the processes used to evaluate the performance of products completed through pre-processing. Post-processing can include: wafer inspection processes to check whether the individual chips on a wafer are functional in order to screen good and defective products; packaging processes to cut and separate individual chips to give them product shape through steps such as dicing, die bonding, wire bonding, molding, and marking; and final inspection processes to check the characteristics and reliability of the product through steps such as electrical characteristic testing and burn-in testing. Summary of the Invention

[0005] Semiconductor manufacturing equipment includes process chambers and annealing chambers for processing substrates (e.g., wafers). However, because annealing chambers are used less frequently than process chambers, semiconductor manufacturing equipment typically has fewer annealing chambers. Therefore, although the processing time for annealing is short compared to other processes (e.g., etching, cleaning, etc.), a shortage of annealing chambers can lead to a decrease in unit per equipment hour (UPEH) when annealing is required.

[0006] The technical problem to be solved by the present invention is to provide a substrate processing apparatus capable of changing the number of heat treatment chambers, such as annealing chambers, and a substrate processing system having the substrate processing apparatus.

[0007] The technical problems of this invention are not limited to those mentioned above. Those skilled in the art can clearly understand other technical problems not mentioned through the following description.

[0008] One aspect of the substrate processing apparatus of the present invention for solving the above-mentioned technical problems includes: a first chamber for heat-treating a substrate; and a second chamber for processing the substrate in a manner other than heat treatment, wherein the number of the first chambers varies depending on the number of the second chambers for heat-treating the substrate.

[0009] The first chamber may be set to the same number as the second chamber, or to a number less than the second chamber.

[0010] The number of second chambers that require heat treatment of the substrate can be determined based on whether process byproducts are generated.

[0011] Whether the process byproducts are generated can be determined based on at least one of the factors of process temperature and the type of substance to be processed.

[0012] The substrate processing apparatus may further include a transfer chamber for moving the substrate to either the first chamber or the second chamber, and the first chamber may be disposed on the side of the transfer chamber where the second chamber is not disposed.

[0013] The substrate processing apparatus may further include a buffer unit disposed on a first side of the transfer chamber and temporarily storing the substrate, and the first chamber may be disposed on at least one side of the first side of the transfer chamber and a second side of the transfer chamber opposite to the first side.

[0014] When the first chamber is located on the first side, the first chamber may be located below the buffer unit.

[0015] When the first chamber is located on the first side and the second side, the first chamber can be located more on the second side than on the first side.

[0016] When the number of first chambers is the same as the number of second chambers, the first chambers can be connected to the second chambers in a one-to-one process connection.

[0017] In the case where the first chamber and the second chamber are connected one-to-one by process, the one-to-one connection between the first chamber and the second chamber can be made taking into account the distance to the second chamber.

[0018] The second chamber can be configured as multiple, and the first chamber can be temporarily connected to any one of the multiple second chambers depending on whether it is in an idle state.

[0019] When multiple first chambers are idle, the second chamber is process-connected to any one of the first chambers selected taking into account the distance to each of the first chambers.

[0020] The first chamber can be heat-treated by annealing the substrate.

[0021] The first chamber can be configured to be installed and removed.

[0022] If heat treatment of the substrate is not required, the second chamber may include a chuck made of metal.

[0023] The second chamber can be used to etch or clean the substrate.

[0024] Another aspect of the substrate processing apparatus of the present invention for solving the above-mentioned technical problems includes: a first chamber for heat-treating a substrate using an annealing process; and a second chamber for processing the substrate in a manner other than heat treatment, wherein the number of the first chambers varies depending on the number of the second chambers for heat-treating the substrate, the number of the second chambers for heat-treating the substrate is determined based on whether process byproducts are generated, and whether process byproducts are generated is determined based on at least one of the factors of process temperature and the type of substance to be processed.

[0025] One aspect of the substrate processing system of the present invention for solving the above-mentioned technical problems includes: a substrate processing apparatus including a first chamber for heat treatment of a substrate and a second chamber for processing the substrate in a manner other than heat treatment; and a control unit for controlling a process connection method between the first chamber and the second chamber, wherein the number of the first chambers is changed according to the number of the second chambers for heat treatment of the substrate.

[0026] Specific details of other embodiments are included in the detailed description and accompanying drawings. Attached Figure Description

[0027] Figure 1 This is a schematic plan view illustrating the internal structure of a substrate processing apparatus according to an embodiment of the present invention.

[0028] Figure 2 It is a plan view used to illustrate the arrangement structure between the process chamber and the heat treatment chamber according to one embodiment.

[0029] Figure 3 This is a front view used to illustrate the arrangement structure between the process chamber and the heat treatment chamber according to one embodiment.

[0030] Figure 4 This is a rear view used to illustrate the arrangement structure between the process chamber and the heat treatment chamber according to one embodiment.

[0031] Figure 5 This is an example diagram used to illustrate the location of the process chamber.

[0032] Figure 6 This is a first example diagram illustrating various process connection methods between a process chamber and a heat treatment chamber according to one embodiment.

[0033] Figure 7 This is a second example diagram illustrating various process connection methods between a process chamber and a heat treatment chamber according to one embodiment.

[0034] Figure 8 It is a plan view used to illustrate the arrangement structure between the process chamber and the heat treatment chamber according to another embodiment.

[0035] Figure 9 This is a front view used to illustrate the arrangement structure between the process chamber and the heat treatment chamber according to another embodiment.

[0036] Figure 10 This is a rear view used to illustrate the arrangement structure between the process chamber and the heat treatment chamber according to another embodiment.

[0037] Figure 11This is a front view used to illustrate the arrangement structure between the process chamber and the heat treatment chamber according to another embodiment.

[0038] Figure 12 This is a rear view used to illustrate the arrangement structure between the process chamber and the heat treatment chamber according to another embodiment.

[0039] Figure 13 This is a schematic view illustrating a substrate processing system equipped with substrate processing apparatus according to various embodiments of the present invention.

[0040] Explanation of reference numerals in the attached figures

[0041] 100: Substrate processing device; 110: Index module

[0042] 111: Loading port; 112: Transfer frame

[0043] 120: Processing module; 121: Buffer unit

[0044] 122: Transfer chamber; 123: Process chamber

[0045] 124: Heat treatment chamber; 130: Container

[0046] 210: Index track 220: Index robot

[0047] 230: Guide rail; 240: Main robot

[0048] 310: First side of the transfer chamber; 320: Second side of the transfer chamber

[0049] 330: Third side of the transfer chamber; 340: Fourth side of the transfer chamber

[0050] 410: First process chamber; 420: Second process chamber

[0051] 430: Third process chamber; 440: Fourth process chamber

[0052] 450: Fifth process chamber; 460: Sixth process chamber

[0053] 510: First heat treatment chamber; 520: Second heat treatment chamber

[0054] 530: Third heat treatment chamber; 540: Fourth heat treatment chamber

[0055] 550: Fifth heat treatment chamber; 560: Sixth heat treatment chamber

[0056] 705~750: Space for heat treatment chamber; 800: Substrate processing system

[0057] 810: Control Department Detailed Implementation

[0058] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, as well as methods for achieving these advantages and features, will be explained by referring to the following description in conjunction with the accompanying drawings. Figure 1 The invention becomes clear from the detailed description of the embodiments. However, the invention is not limited to the embodiments disclosed below, but can be implemented in many different forms. These embodiments are provided only to make the disclosure of the invention complete and to fully inform those skilled in the art of the scope of the invention, which is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0059] When a component or layer is referred to as "on" or "above" another component or layer, it includes not only that it is directly above another component or layer, but also that other layers or other components are in between. Conversely, when a component is referred to as "directly" on or "directly above" another component, it indicates that there are no other components or layers in between.

[0060] To readily describe the relationship between one element or component and another, as shown in the figure, spatial relative terms such as "below," "below," "lower," "above," and "upper" can be used. It should be understood that, in addition to the orientation shown in the figure, spatial relative terms also include terms indicating the different orientations of the elements during use or operation. For example, when the element shown in the figure is flipped, an element described as "below" or "below" of another element may be located "above" of that element. Therefore, the exemplary term "below" can include both "below" and "above" orientations. An element may also be oriented in another direction, thus allowing the spatial relative terms to be interpreted according to orientation.

[0061] Although the terms "first," "second," etc., are used to describe various elements, constituent elements, and / or parts, these elements, constituent elements, and / or parts are obviously not limited by these terms. These terms are only used to distinguish one element, constituent element, and / or part from another element, constituent element, and / or part. Therefore, the first element, first constituent element, or first part mentioned below can obviously also be a second element, second constituent element, or second part within the technical concept of the present invention.

[0062] The terminology used in this specification is for illustrative purposes and is not intended to limit the invention. In this specification, the singular form includes the plural form unless specifically stated otherwise. The terms "comprises" and / or "comprising" as used in this specification do not exclude the presence or addition of one or more other constituent elements, steps, operations, and / or components besides those mentioned.

[0063] Unless otherwise defined, all terms used in this specification (including technical and scientific terms) may be used in the sense that can be commonly understood by one of ordinary skill in the art to which this invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be ideally or excessively interpreted unless explicitly defined otherwise.

[0064] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing the invention with reference to the drawings, the same or corresponding constituent elements are given the same reference numerals regardless of the reference numerals, and repeated descriptions thereof are omitted.

[0065] This invention relates to a substrate processing apparatus and method capable of changing the number of heat treatment chambers. The invention will now be described in detail with reference to the accompanying drawings.

[0066] Figure 1 This is a schematic plan view illustrating the internal structure of a substrate processing apparatus according to an embodiment of the present invention.

[0067] according to Figure 1 The substrate processing apparatus 100 may be configured to include an index module 110 and a process processing module 120.

[0068] The index module 110 and the process processing module 120 can be arranged sequentially in one direction. In this embodiment, the direction in which the index module 110 and the process processing module 120 are arranged is defined as the first direction 10. Furthermore, the direction perpendicular to the first direction 10 when viewed from above is defined as the second direction 20, and the direction perpendicular to the plane including the first direction 10 and the second direction 20 is defined as the third direction 30.

[0069] The index module 110 is positioned in front of the process module 120. This index module 110 can be configured to include a loading port 111 and a transfer frame 112. For example, the index module 110 can be implemented as an Equipment Front End Module (EFEM).

[0070] Loading ports 111 are used to place containers 130 for holding substrates (e.g., wafers). Multiple loading ports 111 can be provided at the front of the transfer frame 112, and multiple loading ports 111 can be arranged in a row along the second direction 20.

[0071] Figure 1 Four loading ports 111 are shown arranged in the index module 110. However, the invention is not limited thereto. The number of loading ports 111 can be increased or decreased depending on factors such as the process efficiency and footprint of the process module 120.

[0072] The container 130 houses multiple substrates. This container 130 may have slots (not shown) inside it configured to support the edges of the substrates.

[0073] Multiple slots can be configured on the third direction 30. In this case, substrates can be stacked on the third direction 30 in a spaced-apart state within the container 130. For example, the container 130 can be implemented as a FrontOpening Unified Pod (FOUP).

[0074] The transfer frame 112 transports substrates between the container 130 placed at the loading port 111 and the buffer unit 121. This transfer frame 112 may be configured to include an index rail 210 and an indexing robot 220.

[0075] Index rail 210 provides a path for indexing robot 220 to move. This index rail 210 can be arranged such that its length direction is parallel to the second direction 20.

[0076] The indexing robot 220 directly transports the substrate. This indexing robot 220 can be mounted on the index rail 210 and can move linearly along the second direction 20 on the index rail 210.

[0077] The indexing robot 220 may be configured to include a first base 221, a first body 222, and an indexing arm 223. Here, the first base 221 may be configured to move along the indexing track 210.

[0078] The first body 222 can be attached to the first base 221. The first body 222 can be configured to move along a third direction 30 on the first base 221. In addition, the first body 222 can also be configured to rotate on the first base 221.

[0079] Index arms 223 are attached to the first body 222 and can be configured to move forward and backward relative to the first body 222. Multiple index arms 223 can be provided on the first body 222 and can be configured to be driven individually.

[0080] Multiple index arms 223 can be stacked and arranged spaced apart from each other along a third direction 30. A portion of the index arms 223 can be used to transport the substrate from the process module 120 to the container 130, and another portion can be used to transport the substrate from the container 130 to the process module 120. If the multiple index arms 223 are configured in this way, it is possible to prevent particles generated from the substrate before process handling from adhering to the substrate after process handling during the loading and unloading of the substrate by the indexing robot 220.

[0081] The process module 120 can be configured to include a buffer unit 121, a transfer chamber 122, and a process chamber 123.

[0082] The buffer unit 121 provides space for the substrate to remain in place before it is transported between the transfer frame 112 and the transfer chamber 122. For this purpose, the buffer unit 121 can be arranged between the transfer frame 112 and the transfer chamber 122. For example, the buffer unit 121 can be implemented as a loadlock chamber.

[0083] The buffer unit 121 may have a slot (not shown) for placing a substrate inside. Multiple slots may be provided in the buffer unit 121, and the multiple slots may be spaced apart from each other along a third direction 30. In addition, the surface of the buffer unit 121 facing the transfer frame 112, the surface facing the transfer chamber 122, etc., may each be open.

[0084] The transfer chamber 122 transports substrates between the buffer unit 121 and the process chamber 123. This transfer chamber 122 can be configured to include a guide rail 230 and a main robot 240. Furthermore, the transfer chamber 122 can also transport substrates between two different process chambers 123.

[0085] The guide rail 230 provides a path for the main robot 240 to move. This guide rail 230 can be arranged such that its length direction is parallel to the first direction 10.

[0086] The main robot 240 directly transports the substrate. This main robot 240 can be mounted on the guide rail 230 and can move linearly along the first direction 10 on the guide rail 230.

[0087] The main robot 240 can be configured to include a second base 241, a second body 242, and a main arm 243. Here, the second base 241 can be configured to move along the guide rail 230.

[0088] The second body 242 can be attached to the second base 241. The second body 242 can be configured to move along a third direction 30 on the second base 241. In addition, the second body 242 can also be configured to rotate on the second base 241.

[0089] The main arm 243 can be attached to the second body 242 and can be configured to move forward and backward relative to the second body 242. Multiple main arms 243 can be configured on the second body 242 and can be driven individually.

[0090] Multiple main arms 243 can be stacked and arranged in a spaced-apart manner along a third direction 30. A portion of the multiple main arms 243 can be used to transport the substrate from the buffer unit 121 to the process chamber 123, and another portion can also be used to transport the substrate from the process chamber 123 to the buffer unit 121.

[0091] The transfer chamber 122 can be arranged such that its length direction is parallel to the first direction 10. At this time, multiple process chambers 123 can be arranged on both sides of the transfer chamber 122 along the second direction 20, and multiple process chambers 123 can also be arranged on each side of the transfer chamber 122 along the first direction 10.

[0092] Multiple process chambers 123 can be stacked on top of each other. That is, multiple process chambers 123 can be arranged in an X*Y pattern on one side of the transfer chamber 122. Here, X is a natural number greater than or equal to 1, representing the number of process chambers 123 arranged in a row along the first direction 10, and Y is a natural number greater than or equal to 1, representing the number of process chambers 123 arranged in a row along the third direction 30.

[0093] For example, when four process chambers 123 are provided on one side of the transfer chamber 122, the four process chambers 123 can be arranged in a 2*2 pattern, and when six process chambers 123 are provided on one side of the transfer chamber 122, the six process chambers 123 can be arranged in a 3*2 pattern.

[0094] Furthermore, the number of process chambers 123 can be increased or decreased. Additionally, process chambers 123 can be provided only on one side of the transfer chamber 122, or they can be arranged as a single layer on one or both sides of the transfer chamber 122.

[0095] In addition to the process chamber 123, the substrate processing apparatus 100 may also include a heat treatment chamber 124.

[0096] Figure 2 This is a plan view illustrating the arrangement structure between the process chamber and the heat treatment chamber according to one embodiment. Figure 3This is a front view illustrating the arrangement structure between the process chamber and the heat treatment chamber according to one embodiment, and Figure 4 This is a rear view used to illustrate the arrangement structure between the process chamber and the heat treatment chamber according to one embodiment. The following description refers to… Figures 2 to 4 .

[0097] Process chamber 123 is a second chamber 123 that performs a first process for processing the substrate. This process chamber 123 can perform processes other than heat treatment as the first process. For example, process chamber 123 can perform etching processes, cleaning processes, etc. as the first process.

[0098] The process chamber 123 can be located on two sides of the transfer chamber 122. For example... Figure 5 As shown, if the side of the transfer chamber 122 that contacts the index module 110 is defined as the first side 310, and the other side of the transfer chamber 122 opposite to the first side is defined as the second side 320, then the other two sides of the transfer chamber 122 can be defined as the third side 330 and the fourth side 340. In this case, the process chamber 123 can be respectively disposed on the third side 330 and the fourth side 340 of the transfer chamber 122. Figure 5 This is an example diagram used to illustrate the location of the process chamber.

[0099] Multiple process chambers 123 can be configured on both sides of the transfer chamber 122. For example, three process chambers 123 can be configured on each side of the transfer chamber 122, for a total of six. Hereinafter, the example of six process chambers 123 on both sides of the transfer chamber 122 will be described, but in this embodiment, the number of process chambers 123 is not limited to this.

[0100] When multiple process chambers 123 are configured on both sides of the transfer chamber 122, all process chambers 123 can perform the same process. For example, all process chambers 123 can perform an etching process. However, this embodiment is not limited to this. The multiple process chambers 123 can also perform different processes on each other.

[0101] Furthermore, some of the multiple process chambers 123 can perform the same process, while others can perform different processes. For example, at least one process chamber 123 located on one side of the transfer chamber 122 can perform an etching process, and at least one process chamber 123 located on the other side of the transfer chamber 122 can perform a cleaning process.

[0102] The heat treatment chamber 124 is a first chamber that performs a second process of heat treatment on the substrate. For example, the heat treatment chamber 124 may perform an annealing process as the second process.

[0103] The heat treatment chamber 124 can be located on one or both sides of the transfer chamber 122. For example... Figure 5 As shown, with the various sides of the transfer chamber 122 defined, the heat treatment chamber 124 may be disposed on at least one of the first side 310 and the second side 320 of the transfer chamber 122.

[0104] Multiple heat treatment chambers 124 may be provided on one or both sides of the transfer chamber 122. In this case, the number of heat treatment chambers 124 may be the same as the number of process chambers 123.

[0105] As described above, six process chambers 123 can be configured on the third side 330 and the fourth side 340 of the transfer chamber 122. In this case, six heat treatment chambers 124 can also be configured on the first side 310 and the second side 320 of the transfer chamber 122.

[0106] When the heat treatment chambers 124 are set to six on the first side 310 and the second side 320 of the transfer chamber 122, two heat treatment chambers 124 can be provided on the first side 310 of the transfer chamber 122 and four heat treatment chambers 124 can be provided on the second side 320 of the transfer chamber 122.

[0107] When the heat treatment chamber 124 is provided with a plurality of first side 310 and second side 320 of the transfer chamber 122, particularly with the same number as the process chamber 123, the second side 320 of the transfer chamber 122 can be provided more than the first side 310 of the transfer chamber 122 as described above.

[0108] However, this embodiment is not limited thereto. The heat treatment chambers 124 may be provided in the same number on the first side 310 and the second side 320 of the transfer chamber 122, or they may be provided in more numbers on the first side 310 of the transfer chamber 122 than on the second side 320 of the transfer chamber 122.

[0109] When there are L heat treatment chambers 124 in the substrate processing apparatus 100, the heat treatment chambers 124 can be provided on the first side 310 of the transfer chamber 122 in more ways than the second side 320 of the transfer chamber 122. For example, when there are two heat treatment chambers 124 in the substrate processing apparatus 100, the two heat treatment chambers 124 can be provided on the first side 310 of the transfer chamber 122.

[0110] When there are M heat treatment chambers 124 in the substrate processing apparatus 100 (here, M>L), the number of heat treatment chambers 124 can be the same on the first side 310 and the second side 320 of the transfer chamber 122. For example, when there are four heat treatment chambers 124 in the substrate processing apparatus 100, two heat treatment chambers 124 can be provided on the first side 310 of the transfer chamber 122, and the remaining two heat treatment chambers 124 can be provided on the second side 320 of the transfer chamber 122.

[0111] When there are N heat treatment chambers 124 in the substrate processing apparatus 100 (here, N>M), the heat treatment chambers 124 can be arranged on the second side 320 of the transfer chamber 122 in more ways than the first side 310 of the transfer chamber 122. For example, when there are six heat treatment chambers 124 in the substrate processing apparatus 100, two heat treatment chambers 124 can be arranged on the first side 310 of the transfer chamber 122, and the remaining four heat treatment chambers 124 can be arranged on the second side 320 of the transfer chamber 122.

[0112] The above describes the cases where the heat treatment chambers 124 are configured as L, M, and N in the substrate processing apparatus 100, but this embodiment is not limited to this.

[0113] When the number of process chambers 123 and heat treatment chambers 124 in the substrate processing apparatus 100 is the same, the process chambers 123 and heat treatment chambers 124 can be process-connected one-to-one. Here, process connection means that the substrate processed in the corresponding process chamber 123 is heat-treated in the corresponding heat treatment chamber 124.

[0114] The following description will be based on the case where there are six process chambers 123 and six heat treatment chambers 124 in the substrate processing apparatus 100. Figure 6 This is a first example diagram illustrating various process connection methods between a process chamber and a heat treatment chamber according to one embodiment. The following description refers to… Figure 6 .

[0115] The first process chamber 410, the second process chamber 420 and the third process chamber 430 can be disposed on the third side 330 of the transfer chamber 122, and the fourth process chamber 440, the fifth process chamber 450 and the sixth process chamber 460 can be disposed on the fourth side 340 of the transfer chamber 122.

[0116] Furthermore, the first heat treatment chamber 510 and the second heat treatment chamber 520 can be disposed on the first side 310 of the transfer chamber 122, and the third heat treatment chamber 530, the fourth heat treatment chamber 540, the fifth heat treatment chamber 550, and the sixth heat treatment chamber 560 can be disposed on the second side 320 of the transfer chamber 122. The third heat treatment chamber 530 and the fourth heat treatment chamber 540 can be disposed above the fifth heat treatment chamber 550 and the sixth heat treatment chamber 560.

[0117] When the first process chamber 410 to the sixth process chamber 460 and the first heat treatment chamber 510 to the sixth heat treatment chamber 560 are arranged as described above, the heat treatment chamber 124 and the process chamber 123 can be connected one-to-one by taking into account the movement distance to the process chamber 123.

[0118] For example, the first heat treatment chamber 510 can be connected to the first process chamber 410, the second heat treatment chamber 520 can be connected to the fourth process chamber 440, the third heat treatment chamber 530 can be connected to the second process chamber 420, the fourth heat treatment chamber 540 can be connected to the fifth process chamber 450, the fifth heat treatment chamber 550 can be connected to the third process chamber 430, and the sixth heat treatment chamber 560 can be connected to the sixth process chamber 460.

[0119] However, this embodiment is not limited thereto. The first heat treatment chamber 510 to the sixth heat treatment chamber 560 may also be randomly connected to the first process chamber 410 to the sixth process chamber 460 in a one-to-one process connection.

[0120] Furthermore, the first heat treatment chambers 510 to the sixth heat treatment chambers 560 may not be connected to the first process chambers 410 to the sixth process chambers 460 in a one-to-one process connection. That is, the first heat treatment chambers 510 to the sixth heat treatment chambers 560 may not be continuously connected to any one of the first process chambers 410 to the sixth process chambers 460 according to a pre-set standard, but may be temporarily connected as needed. This will be explained below.

[0121] Figure 7 This is a second example diagram illustrating various process connection methods between a process chamber and a heat treatment chamber according to one embodiment. The following description refers to… Figure 7 .

[0122] If the substrate is processed in any of the first process chambers 410 to the sixth process chambers 460 (S610), it is determined whether the substrate needs to undergo a heat treatment process (S620).

[0123] If it is determined that a heat treatment process is required for the substrate, the heat treatment chambers in the first heat treatment chamber 510 to the sixth heat treatment chamber 560 that are in an idle state are detected (S630).

[0124] If an idle heat treatment chamber is detected, it is determined whether there are multiple idle heat treatment chambers (S640).

[0125] If the number of heat treatment chambers determined to be in an idle state is not one (i.e., the number of heat treatment chambers determined to be in an idle state is multiple), then the distance between the process chamber of the processed substrate and each heat treatment chamber in an idle state is calculated (S650).

[0126] Then, among the multiple heat treatment chambers that are in an idle state, the heat treatment chamber located at the closest distance to the process chamber of the processed substrate is selected (S660). For example, if the process chamber of the processed substrate is the first process chamber 410 and the heat treatment chambers in an idle state are the second heat treatment chamber 520, the fourth heat treatment chamber 540, and the fifth heat treatment chamber 550, the second heat treatment chamber 520 located at the closest distance to the first process chamber 410 can be selected.

[0127] Then, the substrate is moved to the corresponding heat treatment chamber using the transfer chamber 122, so that the substrate is heat treated in the corresponding heat treatment chamber (S670).

[0128] Furthermore, if it is determined that there is only one heat treatment chamber in an idle state, the substrate is moved to the idle heat treatment chamber using the transfer chamber 122, so that the substrate is heat treated in the corresponding heat treatment chamber (S680).

[0129] Furthermore, in this embodiment, if an idle heat treatment chamber is detected and there are multiple idle heat treatment chambers, any heat treatment chamber can be randomly selected so that the substrate is heat treated in the corresponding heat treatment chamber.

[0130] Furthermore, in this embodiment, the number of heat treatment chambers 124 in the substrate processing apparatus 100 is not limited to the same as the number of process chambers 123. That is, the number of heat treatment chambers 124 in the substrate processing apparatus 100 may also be less than the number of process chambers 123.

[0131] However, as described above, if the number of heat treatment chambers 124 in the substrate processing apparatus 100 is less than that of process chambers 123, the substrate processed by process chambers 123 cannot be directly heat treated because there are no idle heat treatment chambers 124, which may result in a decrease in UPEH (Unit Per Equipment Hour).

[0132] Therefore, the characteristic of this embodiment is that the number of heat treatment chambers 124 provided in the substrate processing apparatus 100 can be changed according to the number of process chambers 123 in which the substrate needs to be heat-treated. This will be explained below.

[0133] The number of process chambers 123 that require heat treatment can be determined based on whether heat treatment (e.g., annealing) is required. When the substrate is processed in the process chambers 123, process byproducts (e.g., particles) may or may not be generated.

[0134] If process byproducts are generated when the substrate is processed in process chamber 123, a heat treatment process is required for the substrate. Conversely, if no process byproducts are generated when the substrate is processed in process chamber 123, a heat treatment process is not required for the substrate. Whether process byproducts are generated can be determined based on process conditions (e.g., process temperature) or the type of target material (e.g., the object to be etched, such as an oxide film (SiO2), a nitride film (SiN), etc.).

[0135] For example, if there are ten process chambers 123 in the substrate processing apparatus 100, the number of heat treatment chambers 124 can be set from a minimum of 0 to a maximum of ten, depending on the number of process chambers 123 required to perform heat treatment processes on the substrate. For example, as Figures 8 to 11 As shown, the heat treatment chamber 124 can be configured as eight.

[0136] Since the number of heat treatment chambers 124 can be varied in the substrate processing apparatus 100 as described above, it is preferable to configure them so that they can be installed and removed. Since space for heat treatment chambers 124 is prepared in advance corresponding to the number of process chambers 123, the number of heat treatment chambers 124 can be adjusted according to the number of process chambers 123 for which heat treatment processes are required on the substrate.

[0137] Figure 8 This is a plan view illustrating the arrangement structure between the process chamber and the heat treatment chamber according to another embodiment. Figure 9 This is a front view illustrating the arrangement structure between the process chamber and the heat treatment chamber according to another embodiment, and Figure 10This is a rear view used to illustrate the arrangement structure between the process chamber and the heat treatment chamber according to another embodiment.

[0138] like Figure 8 As shown, when there are ten process chambers 123 in the substrate processing apparatus 100, there can be a maximum of ten heat treatment chambers 124, so ten spaces 705 to 750 for which heat treatment chambers 124 can be set can also be prepared.

[0139] In the case of preparing a space 705 to 750 for ten heat treatment chambers 124, such as Figure 9 and Figure 10 As shown, four can be prepared on the first side 310 of the transfer chamber 122, and six can be prepared on the second side 320 of the transfer chamber 122.

[0140] However, this embodiment is not limited to this. In this embodiment, it is sufficient to prepare at least one space 705 to 750 for housing the heat treatment chamber 124 on the first side 310 of the transfer chamber 122 and the remaining space on the second side 320 of the transfer chamber 122. Alternatively, in this embodiment, all the spaces 705 to 750 for housing the heat treatment chamber 124 may be prepared on either the first side 310 or the second side 320 of the transfer chamber 122.

[0141] The following description covers the case where four spaces 705 to 720 for setting up heat treatment chambers 124 are prepared on the first side 310 of the transfer chamber 122, and six spaces 725 to 750 for setting up heat treatment chambers 124 are prepared on the second side 320 of the transfer chamber 122, and the number of heat treatment chambers 124 is set to eight as needed for the number of process chambers 123 for performing heat treatment processes on the substrate.

[0142] In the case described above, such as Figure 9 and Figure 10 As shown, four heat treatment chambers 124 can be respectively set on the first side 310 and the second side 320 of the transfer chamber 122. For example, the first to fourth heat treatment chambers can be set in four spaces 705, 710, 715, and 720 prepared on the first side 310 of the transfer chamber 122, and the fifth to eighth heat treatment chambers can be set in four spaces 725, 730, 735, and 740 among the six spaces 725, 730, 735, 740, 745, and 750 prepared on the second side 320 of the transfer chamber 122.

[0143] However, this embodiment is not limited thereto. In this embodiment, the eight heat treatment chambers 124 can be freely selected and arranged in ten pre-prepared spaces 705 to 750.

[0144] For example, such as Figure 11 and Figure 12 As shown, the heat treatment chambers 124 can also be configured as two on the first side 310 of the transfer chamber 122 and six on the second side 320 of the transfer chamber 122. In this case, the first heat treatment chamber and the second heat treatment chamber can be configured in two of the four spaces 705, 710, 715, 720 prepared on the first side 310 of the transfer chamber 122, and the third to eighth heat treatment chambers can be configured in the six spaces 725, 730, 735, 740, 745, 750 prepared on the second side 310 of the transfer chamber 122. Figure 11 This is a front view illustrating the arrangement structure between the process chamber and the heat treatment chamber according to another embodiment, and Figure 12 This is a rear view used to illustrate the arrangement structure between the process chamber and the heat treatment chamber according to another embodiment.

[0145] As described above, the heat treatment chamber 124 can be installed and removed in the substrate processing apparatus 100. For example, the heat treatment chamber 124 can be installed in the substrate processing apparatus 100 in a manner similar to a table drawer. Alternatively, the heat treatment chamber 124 can also be installed in a storage space prepared in the form of a shelf in the apparatus.

[0146] Furthermore, if the number of heat treatment chambers 124 in the substrate processing apparatus 100 is the same as or less than the number of process chambers 123 required for performing heat treatment processes on the substrate, refer to Figure 6 and Figure 7 The various process connection methods between the process chamber 123 and the heat treatment chamber 124 described above can obviously also be applied to the above situation.

[0147] Furthermore, if a process chamber 123 requiring heat treatment is determined among the plurality of process chambers 123 provided in the substrate processing apparatus 100, the material of the chuck provided in the process chamber 123 can be determined accordingly.

[0148] Electro-static chucks (ESCs) present a challenge in controlling temperature during substrate processing. Therefore, in this embodiment, a ceramic chuck is installed inside the process chamber 123 where heat treatment of the substrate is required, and a metal chuck is installed inside the process chamber 123 where heat treatment of the substrate is not required.

[0149] Metal chucks offer the advantage of rapid temperature transitions from high to low temperatures or vice versa. Therefore, for process chambers 123 that do not require heat treatment of the substrate, using a chuck made of metal can further shorten process time and improve process efficiency.

[0150] For chucks made of metal, such as stainless steel (SUS), they can be made of metal.

[0151] Furthermore, the heat treatment chambers 124 can be configured in the substrate processing apparatus 100 in greater numbers than the process chambers 123.

[0152] Next, a substrate processing system having substrate processing apparatus according to various embodiments of the present invention will be described.

[0153] Figure 13 This is a schematic view of a substrate processing system having substrate processing apparatus according to various embodiments of the present invention.

[0154] Reference Figure 13 The substrate processing system 800 may be configured to include a substrate processing apparatus 100 and a control unit 810.

[0155] As already referred to above Figures 1 to 12 The substrate processing apparatus 100 has been described, so its detailed description is omitted here.

[0156] The control unit 810 functions to control the board processing apparatus 100. Therefore, the control unit 810 can be implemented as a device that includes a processor with computing and control functions, a memory with storage functions, a communication unit with communication functions, etc. For example, the control unit 810 can be implemented as a computer or a server.

[0157] In this embodiment, the control unit 810 can control various process connection methods between the process chamber 123 and the heat treatment chamber 124. For example, the control unit 810 can control the reference... Figure 7 The method of explanation.

[0158] In addition, the control unit 810 can also control the method for determining the number of process chambers 123 that need to perform heat treatment on the substrate, and the method for determining the arrangement structure of heat treatment chambers 124 provided according to the number of process chambers 123 that need to perform heat treatment on the substrate.

[0159] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, those skilled in the art should understand that the present invention can be implemented in other specific forms without changing its technical concept or essential features. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

Claims

1. A substrate processing apparatus, comprising: The first chamber is used for heat treatment of the substrate; as well as The second chamber is used to process the substrate by methods other than heat treatment. The number of the first chambers varies depending on the number of the second chambers required to perform heat treatment on the substrate. The number of second chambers that require heat treatment of the substrate is determined based on whether process byproducts are generated when the substrate is processed in the second chamber, such that the substrate in the second chamber that generates process byproducts requires heat treatment, and the substrate in the second chamber that does not generate process byproducts does not require heat treatment.

2. The substrate processing apparatus according to claim 1, wherein, The first chamber is set to the same number as the second chamber, or to a number less than the second chamber.

3. The substrate processing apparatus according to claim 1, wherein, Whether the process byproducts are generated depends on at least one of the following factors: process temperature and the type of substance to be processed.

4. The substrate processing apparatus according to claim 1, wherein, It also includes a transfer chamber for moving the substrate to either the first chamber or the second chamber, and The first chamber is located on the side of the transfer chamber where the second chamber is not located.

5. The substrate processing apparatus according to claim 4, wherein, It also includes a buffer unit disposed on the first side of the transfer chamber and temporarily storing the substrate, and The first chamber is disposed on at least one of a first side of the transfer chamber and a second side of the transfer chamber opposite to the first side.

6. The substrate processing apparatus according to claim 5, wherein, When the first chamber is located on the first side, the first chamber is located below the buffer unit.

7. The substrate processing apparatus according to claim 5, wherein, When the first chamber is located on both the first side and the second side, the first chamber is located more on the second side than on the first side.

8. The substrate processing apparatus according to claim 1, wherein, When the number of first chambers is the same as the number of second chambers, the first chambers and the second chambers are connected in a one-to-one process.

9. The substrate processing apparatus according to claim 8, wherein, In the case where the first chamber and the second chamber are connected one-to-one by process, the first chamber and the second chamber are connected one-to-one by process, taking into account the distance to the second chamber.

10. The substrate processing apparatus according to claim 1, wherein, The second chamber is configured as multiple chambers, and The first chamber is temporarily connected to any one of the plurality of second chambers depending on whether it is in an idle state.

11. The substrate processing apparatus according to claim 1, wherein, When multiple first chambers are idle, the second chamber is process-connected to any one of the first chambers selected taking into account the distance to each of the first chambers.

12. The substrate processing apparatus according to claim 1, wherein, The first chamber is heat-treated by annealing the substrate.

13. The substrate processing apparatus according to claim 1, wherein, The first chamber is configured to be able to be installed and removed.

14. The substrate processing apparatus according to claim 1, wherein, If heat treatment of the substrate is not required, the second chamber includes a chuck made of metal.

15. The substrate processing apparatus according to claim 1, wherein, The second chamber is used to etch or clean the substrate.

16. A substrate processing apparatus, comprising: In the first chamber, the substrate is heat-treated using an annealing process; as well as The second chamber is used to process the substrate by methods other than heat treatment. The number of the first chambers varies depending on the number of the second chambers needed to perform heat treatment on the substrate. The number of second chambers requiring heat treatment of the substrate is determined based on whether process byproducts are generated during the processing of the substrate in the second chambers, such that substrates in second chambers generating process byproducts require heat treatment, and substrates in second chambers not generating process byproducts do not require heat treatment. Whether the process byproducts are generated depends on at least one of the following factors: process temperature and the type of substance to be processed.

17. A substrate processing system, comprising: A substrate processing apparatus includes a first chamber for heat treatment of a substrate and a second chamber for processing the substrate by means other than heat treatment. as well as The control unit controls the process connection method between the first chamber and the second chamber. The number of the first chambers varies depending on the number of the second chambers required to perform heat treatment on the substrate. The number of second chambers that require heat treatment of the substrate is determined based on whether process byproducts are generated when the substrate is processed in the second chamber, such that the substrate in the second chamber that generates process byproducts requires heat treatment, and the substrate in the second chamber that does not generate process byproducts does not require heat treatment.

18. The substrate processing system according to claim 17, wherein, The first chamber is set to the same number as the second chamber, or to a number less than the second chamber.

19. The substrate processing system according to claim 17, wherein, The substrate processing apparatus further includes a transfer chamber for moving the substrate to either the first chamber or the second chamber, and The first chamber is located on the side of the transfer chamber where the second chamber is not located.

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