Wafer carrier and process chamber

Abstract

The present invention provides a wafer carrier and a process chamber, wherein the wafer carrier comprises a base, an electrostatic chuck, a driving component and a plurality of lifting components, wherein the electrostatic chuck is arranged on the base for adsorbing and carrying the wafer, and the electrostatic chuck can be selectively adsorbed with the base; the driving component is connected with the plurality of lifting components for driving the plurality of lifting components to rise and fall, and the lifting component is used to pass through the base under the drive of the driving component, and to abut against a side of the electrostatic chuck facing the base, so as to drive the electrostatic chuck to rise and fall, and separate or fit the electrostatic chuck with the base. The wafer carrier and process chamber provided by the present invention can improve equipment utilization and production capacity, save process components, and reduce costs.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a wafer carrying device and a process chamber. Background Art

[0002] Electrostatic Chuck (ESC) can use Coulomb force (also called electrostatic force) to adsorb and carry wafers. Compared with traditional mechanical chucks, it has more advantages. Therefore, electrostatic chucks replace mechanical chucks in physical vapor deposition (PVD) equipment.

[0003] like Figure 1 As shown, an existing physical vapor deposition process chamber 1 includes a chamber structure 11 and a carrying component 12. The chamber structure 11 is used to provide a physical vapor deposition process environment. The carrying component 12 includes a heating base 121, an electrostatic chuck 122, a deposition ring 123 (Dep ring), a clamp ring 124 (Clamp Ring), a lifting drive component 125 and three ejector pins 126. The electrostatic chuck 122 is set on the heating base 121 to adsorb and carry the wafer. The heating base 121 The electrostatic chuck 122 is heated to heat the wafer to the process temperature required by the physical vapor deposition process. The deposition ring 123 is arranged on the heating base 121 and surrounds the electrostatic chuck 122 to prevent the plasma in the chamber structure 11 from being deposited below it. The pressure ring 124 is arranged on the deposition ring 123 and presses on the edge of the electrostatic chuck 122 to fix the electrostatic chuck 122 on the heating base 121. The heating base 121 and the electrostatic chuck 122 are respectively provided with three through holes for three ejector pins 126 to pass through in a one-to-one manner. The lifting drive component 125 is connected to the three ejector pins 126 and is used to drive the three ejector pins 126 to rise and fall so that the three ejector pins 126 pass through the three through holes in the heating base 121 and the three through holes in the electrostatic chuck 122 in a one-to-one manner, thereby cooperating with the robot to realize the transmission of the wafer between the robot and the electrostatic chuck 122.

[0004] However, the organic matter in the wafer will be carbonized at high temperature, and a conductive carbon film will be formed on the surface of the electrostatic chuck 122, which will reduce the resistance of the surface of the electrostatic chuck 122, resulting in a decrease in the adsorption force of the electrostatic chuck 122, leading to abnormal back pressure. In addition, the internal parts of the electrostatic chuck 122 are easily damaged under the long-term continuous bombardment of high-power plasma, which will also lead to abnormal back pressure. At this time, it may be necessary to cool down and open the process chamber 1 to replace the electrostatic chuck 122. After replacing the new electrostatic chuck 122, the process chamber 1 is closed and heated. In addition, since the process chamber 1 is opened, in order to avoid particle problems, some process components need to be replaced at the same time. After replacing the process components and the electrostatic chuck 122, it takes a long time to restore the process environment of the process chamber 1 for normal production. Therefore, it takes a long time to replace the electrostatic chuck 122 (about 30 hours), which affects the utilization rate and production capacity of the physical vapor deposition process chamber 1, and wastes process components, resulting in increased costs. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a wafer carrier and a process chamber, which can improve equipment utilization and production capacity, save process components, and reduce costs.

[0006] To achieve the purpose of the present invention, a wafer carrying device is provided, comprising a base, an electrostatic chuck, a driving component and a plurality of lifting components, wherein the electrostatic chuck is arranged on the base to adsorb and carry the wafer, and the electrostatic chuck and the base can be selectively adsorbed;

[0007] The driving component is connected to the plurality of lifting components and is used to drive the plurality of lifting components to move up and down. The lifting component is used to pass through the base under the drive of the driving component and abut against a side of the electrostatic chuck facing the base, thereby driving the electrostatic chuck to move up and down, so that the electrostatic chuck is separated from or fitted with the base.

[0008] Optionally, the base is provided with a plurality of first through holes which are spaced apart and correspond one-to-one to the lifting component, the lifting component includes a first lifting section, the first lifting section is connected to the driving component, and a radial dimension of the first lifting section is smaller than a radial dimension of the first through hole, and the plurality of first lifting sections are used to pass through the plurality of first through holes one-to-one under the drive of the driving component and to abut against a side of the electrostatic chuck facing the base.

[0009] Optionally, the lifting component is also used to, under the drive of the driving component, pass through the electrostatic chuck and abut against a side of the wafer carried on the electrostatic chuck facing the electrostatic chuck, thereby driving the wafer to rise and fall, so that the wafer is separated from or bonded to the electrostatic chuck.

[0010] Optionally, the electrostatic chuck is provided with a plurality of second through holes which are distributed at intervals and correspond one-to-one to the lifting components, and the lifting component further includes a second lifting section, and the second lifting section is provided on the first lifting section;

[0011] The radial dimension of the first lifting section is larger than the radial dimension of the second through hole, the radial dimension of the second lifting section is smaller than the radial dimension of the first lifting section and smaller than the radial dimension of the second through hole, the axial dimension of the second lifting section is larger than the height of the electrostatic chuck, and the second lifting section is used to pass through the plurality of first through holes and the plurality of second through holes one by one under the drive of the driving component, and to abut against the side of the wafer carried on the electrostatic chuck facing the electrostatic chuck.

[0012] Optionally, a radial dimension of the first lifting section is greater than 5 mm and less than or equal to 10 mm.

[0013] Optionally, the electrostatic chuck is provided with a first adsorption structure and a second adsorption structure, the first adsorption structure is used to generate an electrostatic adsorption force between the first adsorption structure and the wafer carried on the electrostatic chuck when power is turned on, so as to adsorb the wafer on the electrostatic chuck, and the second adsorption structure is used to generate an electrostatic adsorption force between the first adsorption structure and the base when power is turned on, so as to adsorb the electrostatic chuck to the base.

[0014] Optionally, the first adsorption structure includes a first electrode member and a first electrical connection member, the second adsorption structure includes a second electrode member and a second electrical connection member, and the first electrode member is away from the base relative to the second electrode member;

[0015] The first electrical connector is electrically connected to the first electrode member and an external DC power source, respectively, and is used to transmit the DC power provided by the DC power source to the first electrode member, so that an electrostatic adsorption force is generated between the first electrode member and the wafer carried on the electrostatic chuck;

[0016] The second electrical connection member is electrically connected to the second electrode member and an external DC power supply, respectively, and is used to transmit the DC power provided by the DC power supply to the second electrode member, so as to generate an electrostatic adsorption force between the second electrode member and the base.

[0017] Optionally, the first electrical connector includes a first positive terminal and a first negative terminal, the second electrical connector includes a second positive terminal and a second negative terminal, an electrical connection wire structure is passed through the base, and a first positive connection hole, a first negative connection hole, a second positive connection hole, and a second negative connection hole are provided, wherein the electrical connection wire structure is electrically connected to the positive and negative electrodes of the DC power supply, and is respectively passed through the first positive connection hole, the first negative connection hole, the second positive connection hole, and the second negative connection hole;

[0018] One end of the first positive terminal and the first negative terminal are respectively inserted into the electrostatic chuck to be electrically connected to the first electrode member, and the other end is respectively inserted into the first positive wiring hole and the first negative wiring hole, and is respectively electrically connected to the positive and negative electrodes of the DC power supply by being electrically contacted with the electrical connection wire structures in the first positive wiring hole and the first negative wiring hole;

[0019] One end of the second positive terminal and the second negative terminal are respectively inserted into the electrostatic chuck and electrically connected to the second electrode member, and the other end is respectively inserted into the second positive wiring hole and the second negative wiring hole, and is electrically connected to the positive and negative poles of the DC power supply respectively by electrically contacting the electrical connection wire structure in the second positive wiring hole and the second negative wiring hole.

[0020] Optionally, the distance between the first electrode member and the side of the electrostatic chuck supporting the wafer is 0.1 mm, and the distance between the second electrode member and the side of the electrostatic chuck facing the base is 0.1 mm.

[0021] The present invention also provides a process chamber, including a chamber structure and the wafer carrying device provided by the present invention, wherein the chamber structure is used to provide the process environment required for the semiconductor process, and the wafer carrying device is arranged in the chamber structure for adsorbing and carrying the wafer.

[0022] The present invention has the following beneficial effects:

[0023] The wafer carrying device provided by the present invention can selectively adsorb the electrostatic chuck and the base so that the electrostatic chuck can be fixed on the base by the adsorption force when the semiconductor process is carried out. When the electrostatic chuck needs to be replaced, the adsorption of the electrostatic chuck and the base is cancelled so that the electrostatic chuck and the base can be separated from each other, and a plurality of lifting components are driven to rise and fall by means of a driving component, so that the plurality of lifting components pass through the base and abut against a side of the electrostatic chuck facing the base, thereby driving the electrostatic chuck to rise and fall, and the electrostatic chuck is separated from or fitted with the base. Therefore, the electrostatic chuck can be replaced in cooperation with a robot without opening the chamber structure of the process chamber, thereby reducing the time required for replacing the electrostatic chuck, and eliminating the need to replace the process components that need to be replaced due to opening the chamber structure. Therefore, the equipment utilization rate and production capacity can be improved, process components can be saved, and costs can be reduced.

[0024] The process chamber provided by the present invention arranges the wafer carrying device provided by the present invention in the chamber structure for adsorbing and carrying wafers, thereby improving equipment utilization and production capacity, saving process components and reducing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a structural schematic diagram of an existing physical vapor deposition process chamber;

[0026] Figure 2 A schematic diagram of the structure of a wafer carrier and a process chamber provided in an embodiment of the present invention;

[0027] Figure 3 A schematic diagram of the structure of an electrostatic chuck and a base of a wafer carrying device provided by an embodiment of the present invention when they are attached to each other;

[0028] Figure 4 A schematic diagram of the structure of the wafer carrying device provided by an embodiment of the present invention when the electrostatic chuck is separated from the base;

[0029] Figure 5 A schematic diagram of the top view of the electrostatic chuck of the wafer carrying device provided by an embodiment of the present invention;

[0030] Figure 6 A bottom-up structural schematic diagram of an electrostatic chuck of a wafer carrying device provided by an embodiment of the present invention;

[0031] Figure 7 for Figure 6 AA cross-sectional structure diagram;

[0032] Figure 8 for Figure 6 Schematic diagram of the cross-sectional structure of the middle BB;

[0033] Fig. 9 A schematic diagram of the top view of the base of the wafer carrying device provided in an embodiment of the present invention;

[0034] Fig.10 A bottom-up structural schematic diagram of a base of a wafer carrying device provided by an embodiment of the present invention;

[0035] Fig.11 A schematic structural diagram of the other ends of the first positive terminal and the first negative terminal of the electrostatic chuck of the wafer carrying device provided by the embodiment of the present invention being respectively inserted into the first positive wiring hole and the first negative wiring hole of the base;

[0036] Description of reference numerals:

[0037] 1-process chamber; 11-chamber structure; 12-carrying assembly; 121-heating base; 122-electrostatic chuck; 123-deposition ring; 124-pressure ring; 125-lifting drive component; 126-elevator; 2-wafer carrying device; 21-base; 211-first through hole; 212-first positive wiring hole; 213-first negative wiring hole; 214-second positive wiring hole; 215-second negative wiring hole; 22-electrostatic chuck; 221-second through hole; 23-driving component; 24-elevating component; 241-first elevating section; 242-second elevating section; 25-first electrode member; 26-first electrical connector; 261-first positive terminal; 262 - first negative terminal; 27 - second electrode member; 28 - second electrical connector; 281 - second positive terminal; 282 - second negative terminal; 3 - process chamber; 31 - chamber structure; 32 - target material; 33 - magnetic generating component; 34 - lining; 35 - shielding ring; 36 - deposition ring. DETAILED DESCRIPTION

[0038] In order to enable those skilled in the art to better understand the technical solution of the present invention, the wafer carrying device and the process chamber provided by the present invention are described in detail below with reference to the accompanying drawings.

[0039] like Figure 2 As shown, an embodiment of the present invention provides a wafer carrying device 2, including a base 21, an electrostatic chuck 22, a driving component 23 and a plurality of lifting components 24, wherein the electrostatic chuck 22 is arranged on the base 21, and is used for adsorbing and carrying the wafer, and the electrostatic chuck 22 can be selectively adsorbed to the base 21; the driving component 23 is connected to the plurality of lifting components 24, and is used for driving the plurality of lifting components 24 to rise and fall, and the lifting components 24 are used to pass through the base 21 under the drive of the driving component 23, and abut against a side of the electrostatic chuck 22 facing the base 21, thereby driving the electrostatic chuck 22 to rise and fall, so that the electrostatic chuck 22 is separated from or fitted with the base 21.

[0040] The wafer carrying device 2 provided by the embodiment of the present invention can selectively adsorb the electrostatic chuck 22 and the base 21 during the semiconductor process. The electrostatic chuck 22 is adsorbed with the base 21 so that the electrostatic chuck 22 can be fixed on the base 21 by the adsorption force, so that the electrostatic chuck 22 can stably adsorb and carry the wafer for semiconductor processing. When the electrostatic chuck 22 needs to be replaced, the adsorption of the electrostatic chuck 22 and the base 21 can be cancelled so that the electrostatic chuck 22 and the base 21 can be separated from each other, and the driving component 23 is used to drive the multiple lifting components 24 to rise and fall, so that the multiple lifting components 24 pass through the base 21 and abut against the side of the electrostatic chuck 22 facing the base 21, drive the electrostatic chuck 22 to rise and fall, and separate or fit the electrostatic chuck 22 from the base 21, so that the electrostatic chuck 22 can be replaced in cooperation with the robot without opening the chamber structure 31 of the process chamber 3, thereby reducing the time required for replacing the electrostatic chuck 22, and there is no need to replace the process components that need to be replaced due to opening the chamber structure 31, thereby improving equipment utilization and production capacity, saving process components and reducing costs.

[0041] Optional, in practical applications, such as Figure 2 and Figure 3 As shown, when a semiconductor process is performed, the electrostatic chuck 22 is adsorbed with the base 21, and the electrostatic chuck 22 can be stably adsorbed on the base 21 through the adsorption force between the electrostatic chuck 22 and the base 21, and the electrostatic chuck 22 adsorbs the wafer, and the wafer can be stably adsorbed on the electrostatic chuck 22, so that the base 21 supports the electrostatic chuck 22 and the wafer, so that the wafer can be stably carried on the electrostatic chuck 22 to perform semiconductor processes. Figure 2 and Figure 4As shown, when the electrostatic chuck 22 needs to be replaced, the adsorption of the electrostatic chuck 22 and the base 21 is cancelled, so that the adsorption force between the electrostatic chuck 22 and the base 21 disappears, so that the electrostatic chuck 22 can be separated from the base 21. At this time, the driving component 23 can be used to drive the multiple lifting components 24 to rise and pass through the base 21, so that the multiple lifting components 24 can be against the side of the electrostatic chuck 22 facing the base 21, and support and drive the electrostatic chuck 22 to rise, so that the electrostatic chuck 22 is separated from the base 21. After that, the robot arm can enter the chamber structure 31 of the process chamber 3, and pass through between the multiple lifting components 24 to the bottom of the electrostatic chuck 22. Then, the driving component 23 can be used to The plurality of lifting components 24 are driven to descend, so that the electrostatic chuck 22 carried on the plurality of lifting components 24 falls to the manipulator, and the manipulator carries the electrostatic chuck 22. Subsequently, the manipulator can carry the electrostatic chuck 22 to withdraw from the chamber structure 31, so that the electrostatic chuck 22 can be replaced outside the chamber structure 31, and the new electrostatic chuck 22 is placed on the manipulator. Subsequently, the manipulator can carry the replaced new electrostatic chuck 22 and transfer it to the chamber structure 31. At this time, the plurality of lifting components 24 can be driven to ascend by the driving component 23, so that the plurality of lifting components 24 can be driven to ascend. The component 24 can abut against the side of the electrostatic chuck 22 facing the base 21, and support and drive the electrostatic chuck 22 to rise, so that the electrostatic chuck 22 is separated from the robot, and the electrostatic chuck 22 is supported by multiple lifting components 24. Then, the robot can withdraw to the outside of the chamber structure 31. Thereafter, the driving component 23 can be used to drive the multiple lifting components 24 to descend, so that the electrostatic chuck 22 carried on the multiple lifting components 24 falls onto the base 21, and the electrostatic chuck 22 is supported by the base 21, so that the electrostatic chuck 22 can be adsorbed with the base 21, thereby completing the replacement of the electrostatic chuck 22.

[0042] The wafer carrier 2 provided in the embodiment of the present invention can cooperate with a robot to replace the electrostatic chuck 22 without opening the chamber structure 31 of the process chamber 3. The time taken to transfer the electrostatic chuck 22 to be replaced to the outside of the chamber structure 31 by cooperating with the robot is less than 0.1 hour, and the time taken to lower the replaced electrostatic chuck 22 onto the base 21 by cooperating with the robot is less than 0.1 hour. The time taken to restore the process chamber 3, such as the vacuum degree in the chamber structure 31, is approximately 3 hours. Compared with the 30 hours required in the prior art to open the chamber structure 31 of the process chamber 3 to replace the electrostatic chuck 22, the time taken to replace the electrostatic chuck 22 is greatly reduced, and there is no need to replace the process components that need to be replaced due to opening the chamber structure 31, thereby improving equipment utilization and production capacity, saving process components, and reducing costs.

[0043] like Fig. 9 and Fig.10As shown, in a preferred embodiment of the present invention, a plurality of first through holes 211 which are spaced apart and correspond one-to-one to the lifting component 24 may be provided in the base 21, the lifting component 24 may include a first lifting section 241, the first lifting section 241 is connected to the driving component 23, and a radial dimension of the first lifting section 241 is smaller than a radial dimension of the first through hole 211, and the plurality of first lifting sections 241 are used to pass through the plurality of first through holes 211 one-to-one under the drive of the driving component 23, and to abut against a side of the electrostatic chuck 22 facing the base 21.

[0044] By connecting the first lifting section 241 with the driving component 23, the driving component 23 can drive the multiple first lifting sections 241 to rise when driving the multiple lifting components 24 to rise and fall. By distributing the multiple first through holes 211 at intervals in the base 21, and making the multiple first through holes 211 correspond one-to-one to the lifting components 24, and making the radial size of the first lifting section 241 smaller than the radial size of the first through hole 211, the multiple first lifting sections 241 can pass through the multiple first through holes 211 one-to-one when rising and falling, so as to pass through the base 21, thereby being able to abut against the side of the electrostatic chuck 22 facing the base 21, supporting and driving the electrostatic chuck 22 to rise and fall, so that the electrostatic chuck 22 can be separated from or attached to the base 21.

[0045] Optionally, the diameter of the first through hole 211 may be 13 mm.

[0046] Optionally, a plurality of first through holes 211 are evenly spaced and distributed in the base 21 .

[0047] In a preferred embodiment of the present invention, the lifting component 24 can also be used to pass through the electrostatic chuck 22 and abut against the side of the wafer carried on the electrostatic chuck 22 facing the electrostatic chuck 22 under the drive of the driving component 23, thereby driving the wafer to rise and fall, so that the wafer and the electrostatic chuck 22 are separated or bonded.

[0048] In this way, the driving component 23 drives multiple lifting components 24 to rise and fall, so that the multiple lifting components 24 pass through the electrostatic chuck 22 and abut against the side of the wafer carried on the electrostatic chuck 22 facing the electrostatic chuck 22, thereby driving the wafer to rise and fall, and separating or bonding the wafer to the electrostatic chuck 22, so that the wafer can be replaced in cooperation with the robot without opening the chamber structure 31 of the process chamber 3. That is to say, the wafer carrying device 2 provided in the embodiment of the present invention can replace not only the electrostatic chuck 22 but also the wafer with the help of the driving component 23 and the lifting component 24 without opening the chamber structure 31 of the process chamber 3, thereby improving the utilization rate of the equipment and simplifying the structure of the equipment.

[0049] like Figure 5 and Figure 6As shown, in a preferred embodiment of the present invention, the electrostatic chuck 22 may be provided with a plurality of second through holes 221 that are spaced apart and correspond one-to-one to the lifting component 24, and the lifting component 24 may also include a second lifting section 242, which is arranged on the first lifting section 241; the radial dimension of the first lifting section 241 is greater than the radial dimension of the second through hole 221, the radial dimension of the second lifting section 242 is smaller than the radial dimension of the first lifting section 241, and smaller than the radial dimension of the second through hole 221, the axial dimension of the second lifting section 242 is greater than the height of the electrostatic chuck 22, and the second lifting section 242 is used to pass through the plurality of first through holes 211 and the plurality of second through holes 221 one-to-one under the drive of the driving component 23, and to abut against the side of the wafer carried on the electrostatic chuck 22 facing the electrostatic chuck 22.

[0050] By arranging the second lifting section 242 on the first lifting section 241, the driving component 23 can drive the multiple first lifting sections 241 and the multiple second lifting sections 242 to rise and fall simultaneously when driving the multiple lifting components 24 to rise and fall. By making the radial dimension of the second lifting section 242 smaller than the radial dimension of the first lifting section 241, the multiple second lifting sections 242 can pass through the multiple first through holes 211 one by one when rising and falling, so as to pass through the base 21. By distributing the multiple second through holes 221 in the electrostatic chuck 22 at intervals, and making the multiple second through holes 221 By corresponding one to the lifting component 24, and making the radial dimension of the second lifting section 242 smaller than the radial dimension of the second through hole 221, and making the axial dimension of the second lifting section 242 larger than the height of the electrostatic chuck 22, multiple second lifting sections 242 can pass through multiple second through holes 221 one by one during lifting and lowering, and can pass through the electrostatic chuck 22, so that they can abut against the side of the wafer carried on the electrostatic chuck 22 facing the electrostatic chuck 22, support and drive the wafer to be lifted and lowered, so that the wafer can be separated from or attached to the electrostatic chuck 22. By making the radial dimension of the first lifting section 241 larger than the radial dimension of the second through hole 221, multiple first lifting sections 241 can not pass through the second through hole 221 during lifting and lowering, so that they can still abut against the side of the electrostatic chuck 22 facing the base 21, support and drive the electrostatic chuck 22 to be lifted and lowered, so that the electrostatic chuck 22 can be separated from or attached to the base 21.

[0051] Optionally, in actual applications, when a semiconductor process is being carried out, the robot carries the wafer into the chamber structure 31, and the driving component 23 can drive the multiple lifting components 24 to rise, so that the multiple first lifting sections 241 and the multiple second lifting sections 242 rise at the same time, and the multiple second lifting sections 242 pass through the multiple first through holes 211 and the multiple second through holes 221, pass through the base 21 and the electrostatic chuck 22 one by one, and abut against the side of the wafer carried on the robot facing the electrostatic chuck 22. Then, the robot can withdraw to the outside of the chamber structure 31, and then the driving component 23 can drive the multiple lifting components 24 to descend, so that the multiple first lifting sections 241 and the multiple second lifting sections 242 descend at the same time, so that the wafer carried on the multiple second lifting sections 242 falls onto the electrostatic chuck 22, and the electrostatic chuck 22 carries the wafer and adsorbs the wafer, so that the semiconductor process can be carried out.

[0052] When the semiconductor process is completed, the adsorption of the electrostatic chuck 22 and the wafer is cancelled, so that the adsorption force between the wafer and the electrostatic chuck 22 disappears, so that the wafer and the electrostatic chuck 22 can be separated. At this time, the driving component 23 can drive the multiple lifting components 24 to rise, so that the multiple first lifting sections 241 and the multiple second lifting sections 242 rise at the same time, and the multiple second lifting sections 242 pass through the multiple first through holes 211 and the multiple second through holes 221, pass through the base 21 and the electrostatic chuck 22, and abut against the side of the wafer carried on the electrostatic chuck 22 facing the electrostatic chuck 22, and support and drive the wafer to rise, so that the wafer and the electrostatic chuck 22 can be separated. Subsequently, the robot can enter the chamber structure 31 and lift the wafer from the multiple second lifting sections 242. The robot 23 passes through the chamber structure 31 to the bottom of the wafer. After that, the driving component 23 can drive the multiple lifting components 24 to descend, so that the multiple first lifting sections 241 and the multiple second lifting sections 242 descend at the same time, so that the wafer carried on the multiple second lifting sections 242 falls onto the robot arm, and the robot arm carries the wafer. Subsequently, the robot arm can carry the wafer out of the chamber structure 31, thereby transferring the wafer that has completed the semiconductor process to the outside of the chamber structure 31.

[0053] When the electrostatic chuck 22 needs to be replaced, since the radial dimension of the first lifting section 241 is larger than the radial dimension of the second through hole 221, it cannot pass through the second through hole 221. Therefore, the first lifting section 241 can still be driven by the driving component 23 to abut against the side of the electrostatic chuck 22 facing the base 21, support and drive the electrostatic chuck 22 to rise and fall, so that the electrostatic chuck 22 can be separated from or attached to the base 21, thereby completing the replacement of the electrostatic chuck 22. When replacing the electrostatic chuck 22, the electrostatic chuck 22 does not need to carry a wafer to avoid damage to the wafer.

[0054] Optionally, a plurality of second through holes 221 are evenly spaced and distributed in the electrostatic chuck 22 .

[0055] Optionally, the number of the second through holes 221 may be three, and the three second through holes 221 are evenly spaced in the electrostatic chuck 22. For example, when the electrostatic chuck 22 is circular and the second through holes 221 are circular, the angle between the two connections in the line connecting the centers of the three second through holes 221 is 120°.

[0056] Optionally, the distance between the center of the second through hole 221 and the edge of the electrostatic chuck 22 may be 20 mm.

[0057] Optionally, the radial dimension of the electrostatic chuck 22 may be 394 mm.

[0058] Optionally, the electrostatic chuck 22 may be cylindrical.

[0059] Optionally, the diameter of the cylindrical electrostatic chuck 22 may be 394 mm.

[0060] Optionally, the height of the electrostatic chuck 22 may be 20 mm.

[0061] Optionally, the radial dimension of the first through hole 211 may be 13 mm.

[0062] Optionally, the radial dimension of the second through hole 221 may be 5 mm.

[0063] In a preferred embodiment of the present invention, the radial dimension of the first lifting section 241 may be greater than 5 mm and less than or equal to 10 mm.

[0064] In this way, the radial dimension of the first lifting section 241 can be larger than the radial dimension of the second through hole 221, and smaller than the radial dimension of the first through hole 211. In addition, in some embodiments, a heating component can be provided in the base 21 to heat the wafer to the process temperature required for the semiconductor process through the electrostatic chuck 22. Therefore, by making the first lifting section 241 less than or equal to 10 mm, the radial dimension of the first through hole 211 does not need to be too large, thereby avoiding affecting the heating effect of the base 21 and improving the stability of the equipment.

[0065] In a preferred embodiment of the present invention, the axial dimension of the first lifting section 241 may be 150 mm.

[0066] In a preferred embodiment of the present invention, the radial dimension of the first lifting section 241 may be 10 mm, and the radial dimension of the second lifting section 242 may be 3 mm.

[0067] In this way, the radial dimension of the first lifting section 241 can be larger than the radial dimension of the second through hole 221 and smaller than the radial dimension of the first through hole 211 , and the radial dimension of the second lifting section 242 can be smaller than the radial dimension of the first lifting section 241 and smaller than the radial dimension of the second through hole 221 .

[0068] In a preferred embodiment of the present invention, the axial dimension of the second lifting section 242 may be 50 mm.

[0069] In this way, the axial dimension of the second lifting section 242 can be greater than the height of the electrostatic chuck 22 .

[0070] Optionally, the first lifting section 241 may be rod-shaped, and the second lifting section 242 may be rod-shaped.

[0071] In a preferred embodiment of the present invention, a first adsorption structure and a second adsorption structure may be provided in the electrostatic chuck 22. The first adsorption structure is used to generate an electrostatic adsorption force between the first adsorption structure and the wafer carried on the electrostatic chuck 22 when power is turned on, so as to adsorb the wafer on the electrostatic chuck 22. The second adsorption structure is used to generate an electrostatic adsorption force between the first adsorption structure and the base 21 when power is turned on, so as to adsorb the electrostatic chuck 22 to the base 21.

[0072] By providing the first adsorption structure and the second adsorption structure in the electrostatic chuck 22, the first adsorption structure can be energized to generate an electrostatic adsorption force between the first adsorption structure and the wafer carried on the electrostatic chuck 22, so that the wafer can be adsorbed on the electrostatic chuck 22 with the help of the first adsorption structure, and the electrostatic chuck 22 can adsorb the wafer. Moreover, by canceling the energization of the first adsorption structure, the electrostatic adsorption force between the first adsorption structure and the wafer carried on the electrostatic chuck 22 disappears, thereby canceling the adsorption of the wafer by the electrostatic chuck 22, and the wafer can be adsorbed on the electrostatic chuck 22. The disk 22 is separated, and the second adsorption structure can be energized to generate an electrostatic adsorption force between the second adsorption structure and the base 21, so that the base 21 and the electrostatic chuck 22 are adsorbed by the second adsorption structure, thereby realizing the adsorption of the electrostatic chuck 22 and the base 21, and the electrostatic adsorption force between the second adsorption structure and the base 21 can be eliminated by canceling the power supply to the second adsorption structure, thereby canceling the adsorption of the electrostatic chuck 22 and the base 21, so that the electrostatic chuck 22 can be separated from the base 21, thereby realizing the selective adsorption of the electrostatic chuck 22 and the base 21.

[0073] like Figure 7 and Figure 8As shown, in a preferred embodiment of the present invention, the first adsorption structure may include a first electrode member 25 and a first electrical connector 26, and the second adsorption structure may include a second electrode member 27 and a second electrical connector 28, the first electrode member 25 is away from the base 21 relative to the second electrode member 27; the first electrical connector 26 is electrically connected to the first electrode member 25 and an external DC power supply, respectively, for transmitting the DC power provided by the DC power supply to the first electrode member 25, so that an electrostatic adsorption force is generated between the first electrode member 25 and the wafer carried on the electrostatic chuck 22; the second electrical connector 28 is electrically connected to the second electrode member 27 and an external DC power supply, respectively, for transmitting the DC power provided by the DC power supply to the second electrode member 27, so that an electrostatic adsorption force is generated between the second electrode member 27 and the base 21.

[0074] By electrically connecting the first electrical connector 26 to the first electrode member 25 and an external DC power supply respectively, the DC power provided by the DC power supply can be transmitted to the first electrode member 25 with the help of the first electrical connector 26. By making the first electrode member 25 away from the base 21 relative to the second electrode member 27, an electrostatic adsorption force can be generated between the first electrode member 25 and the wafer carried on the electrostatic chuck 22 when power is turned on, so that the wafer is adsorbed on the electrostatic chuck 22 with the help of the first electrode member 25, and the first adsorption structure adsorbs the wafer. By electrically connecting the second electrical connector 28 to the second electrode member 27 and an external DC power supply respectively, the DC power provided by the DC power supply can be transmitted to the second electrode member 27 with the help of the second electrical connector 28. By making the second electrode member 27 close to the base 21 relative to the first electrode member 25, an electrostatic adsorption force can be generated between the second electrode member 27 and the base 21 when power is turned on, so that the base 21 and the electrostatic chuck 22 are adsorbed with the help of the second electrode member 27, and the second adsorption structure adsorbs the base 21 and the electrostatic chuck 22.

[0075] like Figure 7-Figure 11As shown, in a preferred embodiment of the present invention, the first electrical connector 26 may include a first positive terminal 261 and a first negative terminal 262, the second electrical connector 28 may include a second positive terminal 281 and a second negative terminal 282, an electrical connection line structure may be penetrated in the base 21, and a first positive wiring hole 212, a first negative wiring hole 213, a second positive wiring hole 214 and a second negative wiring hole 215 may be provided, wherein the electrical connection line structure is electrically connected to the positive and negative electrodes of the DC power supply, and is respectively penetrated to the first positive wiring hole 212, the first negative wiring hole 213, the second positive wiring hole 214 and the second negative wiring hole 215; one end of the first positive terminal 261 and the first negative terminal 262 are respectively penetrated into the electrostatic chuck 22 and electrically connected to the first electrode member 25, and the other end is respectively penetrated into the first positive wiring hole 212 and the first negative wiring hole 213, and is respectively connected to the first positive wiring hole 212 and the first negative wiring hole 213. The second positive terminal 281 and the second negative terminal 282 are respectively inserted into the electrostatic chuck 22 and electrically connected to the second electrode member 27 at one end, and the other end is respectively inserted into the second positive wiring hole 214 and the second negative wiring hole 215, and are respectively electrically connected to the positive and negative poles of the DC power supply by electrically contacting the electrical connection wire structure in the second positive wiring hole 214 and the second negative wiring hole 215.

[0076] By inserting the other end of the first positive terminal 261 electrically connected to the first electrode member 25 into the first positive wiring hole 212, the other end of the first positive terminal 261 can be electrically contacted with the electrical connection line structure penetrated into the first positive wiring hole 212. Since the electrical connection line structure penetrated into the first positive wiring hole 212 is electrically connected to the positive electrode of the DC power supply, the first positive terminal 261 can be electrically connected to the positive electrode of the DC power supply through the electrical connection line structure. By inserting the other end of the first negative terminal 262 electrically connected to the first electrode member 25 into the first negative wiring hole 213, the other end of the first negative terminal 262 can be electrically contacted with the electrical connection line structure penetrated into the first negative wiring hole 213. Since the electrical connection line structure penetrated into the first negative wiring hole 213 The electrical connection line structure is electrically connected to the negative pole of the DC power supply. Therefore, the first negative terminal 262 can be electrically connected to the negative pole of the DC power supply through the electrical connection line structure, so that the DC power provided by the DC power supply can be transmitted to the first electrode member 25 through the electrical connection line structure, the first positive terminal 261 and the first negative terminal 262, and a loop is formed to enable an electrostatic adsorption force to be generated between the first electrode member 25 and the wafer carried on the electrostatic chuck 22.

[0077] By inserting the other end of the second positive terminal 281 electrically connected to the second electrode member 27 into the second positive wiring hole 214, the other end of the second positive terminal 281 can be electrically contacted with the electrical connection line structure inserted into the second positive wiring hole 214. Since the electrical connection line structure inserted into the second positive wiring hole 214 is electrically connected to the positive electrode of the DC power supply, the second positive terminal 281 can be electrically connected to the positive electrode of the DC power supply through the electrical connection line structure. By inserting the other end of the second negative terminal 282 electrically connected to the second electrode member 27 into the second negative wiring hole 215, the other end of the second negative terminal 282 can be electrically contacted with the electrical connection line structure inserted into the second negative wiring hole 215. Since the electrical connection line structure inserted into the second negative wiring hole 215 The electrical connection line structure is electrically connected to the negative pole of the DC power supply. Therefore, the second negative terminal 282 can be electrically connected to the negative pole of the DC power supply through the electrical connection line structure, so that the DC power provided by the DC power supply can be transmitted to the second electrode member 27 through the electrical connection line structure, the second positive terminal 281 and the second negative terminal 282, and a loop is formed to enable an electrostatic adsorption force to be generated between the second electrode member 27 and the base 21.

[0078] Optionally, the radial dimension of the first positive wiring hole 212 may be 6 mm.

[0079] Optionally, the radial dimension of the first negative wiring hole 213 may be 6 mm.

[0080] Optionally, the radial dimension of the second positive wiring hole 214 may be 6 mm.

[0081] Optionally, the radial dimension of the second negative wiring hole 215 may be 6 mm.

[0082] In a preferred embodiment of the present invention, the first electrode 25 may be spaced 0.1 mm from a surface of the electrostatic chuck 22 supporting the wafer, and the second electrode 27 may be spaced 0.1 mm from a surface of the electrostatic chuck 22 facing the base 21 .

[0083] Such a design can improve the adsorption capability of the first electrode member 25 on the wafer, and can improve the adsorption capability of the second electrode member 27 on the base 21 .

[0084] like Figure 2 As shown, an embodiment of the present invention further provides a process chamber 3, including a chamber structure 31 and a wafer carrier 2 as provided in an embodiment of the present invention. The chamber structure 31 is used to provide the process environment required for the semiconductor process. The wafer carrier 2 is arranged in the chamber structure 31 for adsorbing and carrying wafers.

[0085] The process chamber 3 provided in the embodiment of the present invention arranges the wafer carrying device 2 provided in the embodiment of the present invention in the chamber structure 31 for adsorbing and carrying wafers, thereby improving equipment utilization and production capacity, saving process components and reducing costs.

[0086] like Figure 2 As shown, in a preferred embodiment of the present invention, the process chamber 3 may further include a target material 32, a magnetic generating component 33, a liner 34, a shielding ring 35 and a deposition ring 36, wherein the target material 32 is arranged in the chamber structure 31 and is located above the electrostatic chuck 22, and the magnetic generating component 33 is arranged on the top of the chamber structure 31 and is located above the target material 32, and is used to generate a magnetic field to attract the plasma in the chamber structure 31 to bombard the target material 32 to generate the deposit required by the physical vapor deposition process, and the deposit falls to the carrier The wafer on the electrostatic chuck 22 is used to complete the physical vapor deposition process. The liner 34 is annular and is arranged between the target material 32 and the electrostatic chuck 22, and surrounds the inner side of the chamber structure 31 along the inner wall of the chamber structure 31 to prevent the sediment from being deposited on the inner wall of the chamber structure 31. The shielding ring 35 is annular and overlaps the liner 34. The deposition ring 36 is annular and is arranged on the base 21 and surrounds the electrostatic chuck 22. When the semiconductor process is performed, the base 21 and the electrostatic chuck 22 can rise, and the deposition ring 36 rises with the base 21 and lifts the shielding ring 35, thereby preventing the sediment from being deposited on the base 21 and the inner wall of the chamber structure 31 below the base 21 and the electrostatic chuck 22 through the deposition ring 36 and the shielding ring 35.

[0087] Optionally, the magnetic generating component 33 may include a rotating magnetron.

[0088] In summary, the wafer carrier 2 and the process chamber 3 provided by the embodiment of the present invention can improve equipment utilization and production capacity, save process components, and reduce costs.

[0089] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A wafer carrying device, It is characterized in that It comprises a base, an electrostatic chuck, a driving component and a plurality of lifting components, wherein the electrostatic chuck is arranged on the base to adsorb and carry the wafer, and the electrostatic chuck and the base can be selectively adsorbed; The driving component is connected to the plurality of lifting components and is used to drive the plurality of lifting components to move upward and downward. The lifting component is used to pass through the base under the drive of the driving component and abut against a side of the electrostatic chuck facing the base, thereby driving the electrostatic chuck to move upward and downward, so that the electrostatic chuck is separated from or attached to the base. The lifting component is also used to, under the drive of the driving component, pass through the electrostatic chuck and abut against a side of the wafer carried on the electrostatic chuck facing the electrostatic chuck, thereby driving the wafer to rise and fall, so that the wafer is separated from or attached to the electrostatic chuck; The base is provided with a plurality of first through holes which are distributed at intervals and correspond to the lifting component one by one, the lifting component includes a first lifting section, the first lifting section is connected to the driving component, and the radial dimension of the first lifting section is smaller than the radial dimension of the first through hole, and the plurality of first lifting sections are used to pass through the plurality of first through holes one by one under the drive of the driving component, and to abut against a side of the electrostatic chuck facing the base; the electrostatic chuck is provided with a plurality of second through holes which are distributed at intervals and correspond to the lifting component one by one, the lifting component also includes a second lifting section, and the second lifting section is arranged on the first lifting section; the radial dimension of the first lifting section is larger than the radial dimension of the second through hole, the radial dimension of the second lifting section is smaller than the radial dimension of the first lifting section, and smaller than the radial dimension of the second through hole, the axial dimension of the second lifting section is larger than the height of the electrostatic chuck, and the second lifting section is used to pass through the plurality of first through holes and the plurality of second through holes one by one under the drive of the driving component, and to abut against a side of the wafer carried on the electrostatic chuck facing the electrostatic chuck.

2. The wafer carrier according to claim 1, It is characterized in that The radial dimension of the first lifting section is greater than 5 mm and less than or equal to 10 mm.

3. The wafer carrier according to claim 1, It is characterized in that The electrostatic chuck is provided with a first adsorption structure and a second adsorption structure. The first adsorption structure is used to generate an electrostatic adsorption force between the first adsorption structure and the wafer carried on the electrostatic chuck when power is turned on, so as to adsorb the wafer on the electrostatic chuck. The second adsorption structure is used to generate an electrostatic adsorption force between the first adsorption structure and the base when power is turned on, so as to adsorb the electrostatic chuck to the base.

4. The wafer carrier according to claim 3, It is characterized in that The first adsorption structure includes a first electrode member and a first electrical connection member, the second adsorption structure includes a second electrode member and a second electrical connection member, and the first electrode member is away from the base relative to the second electrode member; The first electrical connector is electrically connected to the first electrode member and an external DC power source, respectively, and is used to transmit the DC power provided by the DC power source to the first electrode member, so that an electrostatic adsorption force is generated between the first electrode member and the wafer carried on the electrostatic chuck; The second electrical connection member is electrically connected to the second electrode member and an external DC power supply, respectively, and is used to transmit the DC power provided by the DC power supply to the second electrode member, so as to generate an electrostatic adsorption force between the second electrode member and the base.

5. The wafer carrier according to claim 4, It is characterized in that The first electrical connector includes a first positive terminal and a first negative terminal, the second electrical connector includes a second positive terminal and a second negative terminal, an electrical connection wire structure is passed through the base, and is provided with a first positive connection hole, a first negative connection hole, a second positive connection hole, and a second negative connection hole, wherein the electrical connection wire structure is electrically connected to the positive and negative electrodes of the DC power supply, and is respectively passed through the first positive connection hole, the first negative connection hole, the second positive connection hole, and the second negative connection hole; One end of the first positive terminal and the first negative terminal are respectively inserted into the electrostatic chuck to be electrically connected to the first electrode member, and the other end is respectively inserted into the first positive wiring hole and the first negative wiring hole, and is respectively electrically connected to the positive and negative electrodes of the DC power supply by being electrically contacted with the electrical connection wire structures in the first positive wiring hole and the first negative wiring hole; One end of the second positive terminal and the second negative terminal are respectively inserted into the electrostatic chuck and electrically connected to the second electrode member, and the other end is respectively inserted into the second positive wiring hole and the second negative wiring hole, and is electrically connected to the positive and negative poles of the DC power supply respectively by electrically contacting the electrical connection wire structure in the second positive wiring hole and the second negative wiring hole.

6. The wafer carrier according to claim 4, It is characterized in that The distance between the first electrode member and the surface of the electrostatic chuck supporting the wafer is 0.1 mm, and the distance between the second electrode member and the surface of the electrostatic chuck facing the base is 0.1 mm.

7. A process chamber, It is characterized in that It comprises a chamber structure and a wafer carrying device as described in any one of claims 1 to 6, wherein the chamber structure is used to provide a process environment required for a semiconductor process, and the wafer carrying device is arranged in the chamber structure to adsorb and carry the wafer.

Images