Mask plate, method for preparing same, display panel, display device, and lithography equipment

Abstract

Embodiments of the present invention disclose a method for preparing a mask, a mask, a display panel, and a lithography apparatus. The mask is used to prepare a target film layer in a single exposure process. The target film layer includes a plurality of holes with different positions, and at least two holes have different hole depths and / or hole diameters. The preparation method includes: obtaining the positions, hole depths, and hole diameter parameters of the respective holes of the target film layer to form a three-dimensional pattern; obtaining an exposure pattern according to the three-dimensional pattern and the material characteristics of the target film layer; calculating the spatial distribution pattern of the mask according to the exposure pattern; and manufacturing the mask according to the spatial distribution pattern. In the embodiments of the present invention, the three-dimensional pattern of the target film layer is obtained by lithography of light spots with different light intensities diffracted by the spatial distribution pattern on the mask. Therefore, the diffraction principle can be used to inversely deduce the spatial distribution pattern on the mask from the three-dimensional pattern of the target film layer. It is realized to manufacture a corresponding mask according to the required three-dimensional pattern.

Description

Technical Field

[0001] Embodiments of the present invention relate to lithography technology, and in particular, to a mask and a method for preparing the same, a display panel, a display device, and a lithography apparatus. Background Art

[0002] With the development of mobile terminal technology, mobile terminals with an in-screen camera have started to appear on the market and are widely sought after by consumers.

[0003] However, a phase scrambling layer needs to be used in the screen area where the in-screen camera is located to reduce the problem of low imaging quality caused by diffraction. The phase scrambling layer needs to be formed by multiple exposures, with numerous production steps and a long time consumption. As a result, the production cost is high and the output is low. Summary of the Invention

[0004] Embodiments of the present invention provide a mask and a method for preparing the same, a display panel, a display device, and a lithography apparatus to reduce production steps, shorten production time, reduce costs, and increase output.

[0005] In a first aspect, embodiments of the present invention provide a method for preparing a mask. The mask is used to prepare a target film layer in a single exposure process. The target film layer includes a plurality of holes with different positions, and the hole depths and / or hole diameters of at least two of the holes are different. The preparation method includes:

[0006] Obtaining the positions, hole depths, and hole diameter parameters of the respective holes of the target film layer to form a three-dimensional pattern;

[0007] Obtaining an exposure pattern based on the three-dimensional pattern and the material properties of the target film layer;

[0008] Calculating a spatial distribution pattern of the mask based on the exposure pattern;

[0009] Manufacturing the mask based on the spatial distribution pattern.

[0010] In a second aspect, embodiments of the present invention further provide a mask formed by using the above preparation method.

[0011] In a third aspect, embodiments of the present invention further provide a display panel. The display panel includes a first display area and a second display area adjacent to the first display area. The second display area is multiplexed as an optical setting area. The optical setting area includes a phase scrambling layer, and the phase scrambling layer is prepared by a single exposure process using the above mask.

[0012] In a fourth aspect, embodiments of the present invention further provide a display device including the above display panel.

[0013] Fifth aspect, an embodiment of the present invention further provides a lithography apparatus, which uses the above-mentioned mask to prepare a target film layer through a single exposure process. The target film layer includes a plurality of holes with different positions, and at least two of the holes have different hole depths and / or hole diameters.

[0014] In the embodiment of the present invention, the mask is used to prepare a target film layer in a single exposure process. The target film layer includes a plurality of holes with different positions, and at least two of the holes have different hole depths and / or hole diameters. The preparation method includes: obtaining the position, hole depth, and hole diameter parameters of each hole in the target film layer to form a three-dimensional pattern; obtaining an exposure pattern according to the three-dimensional pattern and the material characteristics of the target film layer; calculating the spatial distribution pattern of the mask according to the exposure pattern; and manufacturing the mask according to the spatial distribution pattern. Since the three-dimensional pattern of the target film layer is obtained by lithography of light spots with different light intensities diffracted by the spatial distribution pattern on the mask, the spatial distribution pattern on the mask can be deduced in reverse through the three-dimensional pattern of the target film layer by using the diffraction principle. The corresponding mask is manufactured according to the required three-dimensional pattern. Through this mask, a target film layer with different hole depths and / or hole diameters can be obtained only by one lithography. The number of exposure times is greatly simplified, and the production time required is reduced. Furthermore, the production cost is reduced and the yield is increased. Description of the Drawings

[0015] Figure 1 It is a flowchart of a method for manufacturing a mask provided by an embodiment of the present invention;

[0016] Figure 2 It is a specific flowchart of a method for manufacturing a mask provided by an embodiment of the present invention;

[0017] Figure 3 It is a specific flowchart of another method for manufacturing a mask provided by an embodiment of the present invention;

[0018] Figure 4 It is a specific flowchart of another method for manufacturing a mask provided by an embodiment of the present invention;

[0019] Figure 5 It is a schematic diagram of a mask provided by an embodiment of the present invention;

[0020] Figure 6 It is a specific flowchart of another method for manufacturing a mask provided by an embodiment of the present invention;

[0021] Figure 7 It is a schematic structural diagram of a display panel provided by an embodiment of the present invention;

[0022] Figure 8 It is a flowchart of a single exposure process provided by an embodiment of the present invention;

[0023] Figure 9Schematic structural diagram of a phase scrambling layer prepared by a single exposure process provided by an embodiment of the present invention. Detailed implementation manners

[0024] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the present invention, rather than limiting the present invention. Additionally, it should be noted that for the sake of description, only parts related to the present invention are shown in the drawings, rather than all the structures.

[0025] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. It should be noted that the orientation terms such as "upper", "lower", "left", and "right" described in the embodiments of the present invention are described from the angles shown in the drawings, and should not be construed as limiting the embodiments of the present invention. In addition, in the context, it should also be understood that when it is mentioned that an element is formed "on" or "under" another element, it can not only be directly formed "on" or "under" another element, but also be indirectly formed "on" or "under" another element through an intermediate element. The terms "first", "second", etc. are only used for descriptive purposes, and do not represent any order, quantity, or importance, but are only used to distinguish different components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0026] In the prior art, the camera in the under-screen camera technology is disposed under the screen, and light enters the camera through the screen for imaging. However, there are many metal traces crisscrossing horizontally and vertically on the screen. These metal traces are opaque and the distances between them are relatively close. When the light for imaging passes through the metal traces of the screen, a strong diffraction effect will occur, seriously degrading the imaging quality of the camera.

[0027] Therefore, a technical solution of adding a phase scrambling layer in front of the camera is proposed. The phase scrambling layer may have holes with different hole depths and / or hole diameters. When light passes through these holes, due to the differences in hole depth and / or hole diameter, physical quantities such as the phase of the light emerging from different holes are also different. Thus, the disordered transformation of light is achieved through the phase scrambling layer, achieving the effect of reducing diffraction.

[0028] However, since generally the phase scrambling layer needs to have holes with different hole depths and hole diameters. And each time during photolithography, the etched depths of the holes etched on the phase scrambling layer attached to the mask are the same. Therefore, multiple masks need to be prepared, and the patterns of each mask are different. The production of a phase scrambling layer with different hole depths and hole diameters is achieved through multiple exposures and etching. However, the processing method of multiple exposures not only consumes a large amount of energy, takes a long time in production and manufacturing, and has a low yield. Moreover, multiple masks need to be cooperatively produced, resulting in high production costs.

[0029] Figure 1 The flowchart of a method for manufacturing a mask provided by an embodiment of the present invention is referred to Figure 1 . Based on the above technical problems, an embodiment of the present invention provides a method for manufacturing a mask. The mask is used to manufacture a target film layer in a single exposure process. The target film layer includes a plurality of holes with different positions, and the hole depths and / or hole diameters of at least two holes are different. The manufacturing method includes:

[0030] S1: Obtain the position, hole depth, and hole diameter parameters of each hole in the target film layer to form a three-dimensional pattern.

[0031] Among them, the parameters of the holes in the target film layer can be determined according to actual needs. For example, the parameters of the holes can include the position of the holes, the shape of the holes, the hole depth, and the hole diameter parameters, etc. By setting a variety of different holes, the disorder degree of the light passing through the target film layer can be increased, so as to realize the disordered transformation of light through the target film layer and reduce light diffraction.

[0032] Figure 2 The specific flowchart of a method for manufacturing a mask provided by an embodiment of the present invention is referred to Figure 2 . Optionally, obtaining the position, hole depth, and hole diameter parameters of each hole in the target film layer to form a three-dimensional pattern may include:

[0033] S11: Obtain the position, hole depth, and hole diameter parameters of each hole in the target film layer;

[0034] Among them, the parameters of the light emitted from the holes can be changed by changing parameters such as the position, hole depth, and hole diameter of the holes. Therefore, the parameters such as the position, hole depth, and hole diameter of the holes can be set according to actual needs.

[0035] S12: Draw a three-dimensional pattern according to the parameters of the holes on the target film layer.

[0036] Among them, the three-dimensional pattern can be drawn according to the determined parameters of the holes such as the position, hole depth, and hole diameter of the holes.

[0037] S2: Obtain an exposure pattern according to the three-dimensional pattern and the material characteristics of the target film layer.

[0038] Among them, the three-dimensional pattern reflects the parameters such as the hole depth and / or hole diameter and the position of the holes in the target film layer, and these holes need to be formed by a photolithography process. Therefore, parameters such as the spot distribution position, spot shape, and spot light intensity corresponding to the target film layer can be deduced according to the above information such as the shape, position, and depth of the holes, and the exposure pattern can be determined by integrating the material characteristics such as the refractive index of the target film layer according to the above parameters.

[0039] Figure 3 The specific flowchart of another method for manufacturing a mask provided by an embodiment of the present invention is referred to Figure 3Optionally, according to the material characteristics of the three-dimensional pattern and the target film layer, the step of obtaining the exposure pattern includes:

[0040] S21: Determine the spot positions in the exposure pattern according to the positions of the respective holes;

[0041] S22: Determine the spot diameter and spot intensity of the exposure pattern according to the aperture, depth, and material characteristics of the respective holes;

[0042] S23: Determine the exposure pattern according to the spot positions, spot diameter, and spot intensity.

[0043] Among them, the exposure pattern can be obtained through the three steps of S21, S22, and S23. Then, a coordinate system is established according to the exposure pattern, and a frequency domain function F(u, v) is established according to the relationship of the light intensity at the coordinate points. By establishing a mathematical model for the exposure pattern in the above manner, subsequent calculations can be facilitated.

[0044] S3: Calculate the spatial distribution pattern of the mask according to the exposure pattern.

[0045] Among them, the exposure pattern is obtained by diffraction of the spatial distribution pattern on the mask, and the required spatial distribution pattern of the mask can be inversely deduced according to the required exposure pattern.

[0046] Figure 4 This is a specific flowchart of another method for manufacturing a mask provided by an embodiment of the present invention. Refer to Figure 4 .

[0047] Optionally, calculating the spatial distribution pattern of the mask according to the exposure pattern includes:

[0048] S31: Regard the exposure pattern as a frequency domain function;

[0049] S32: Perform a two-dimensional Fourier transform on the frequency domain function to obtain the spatial distribution pattern of the mask in the spatial domain.

[0050] Specifically, a frequency domain function F(u, v) can be established according to the relationship between the light intensity and the coordinates at the coordinate points of the exposure pattern, and a spatial domain function f(x, y) can be established according to the coordinates of the spatial distribution pattern of the mask. Due to the uniqueness of the Fourier transform and inverse transform of the wavefront. Therefore, after determining one of the exposure pattern or the spatial distribution pattern of the mask, the other can be deduced through Fourier transform or inverse transform. That is, a certain diffraction spot distribution corresponds to a certain determined spatial distribution pattern. The spatial domain function f(x, y) can be determined according to the frequency domain function F(u, v) through two-dimensional Fourier transform or inverse transform. For example, the frequency domain function F(u, v) can be determined according to the exposure pattern, and according to the frequency domain function F(u, v) and the relationship formula Determine the spatial domain function f(x,y), and draw a mask with a corresponding spatial distribution pattern according to the spatial domain function f(x,y). The advantage of lithography using the diffraction principle is that the energy levels of the diffraction spots can be different, and the spot sizes and shapes can also be different. This property is very suitable for one-time exposure distribution. Therefore, when making patterns with different apertures and / or hole depths, only a mask with a diffraction spot exactly being the required exposure distribution needs to be designed. The production can be completed with only one exposure, without the need for multiple exposures, so there is no alignment error in multiple exposures, and the yield is high.

[0051] S4: Make a mask according to the spatial distribution pattern.

[0052] Among them, the mask can be made by a lithography process. Expose the parts that need to be light-transmissive to cause the photoresist to fall off. Then, etch away the light-shielding layer not covered by the photoresist to make the exposed area light-transmissive, and retain the light-shielding layer of the part that needs to be light-shielded, and the mask can be obtained.

[0053] Figure 5 Schematic diagram of a mask provided by an embodiment of the present invention, refer to Figure 5 .

[0054] Among them, the mask has a spatial distribution pattern that is light-transmissive. Specifically, the light-transmissive distribution pattern includes a plurality of diffraction holes. Using the diffraction effect when parallel light passes through the mask, the required exposure pattern is obtained on the side of the mask far from the light source.

[0055] Figure 6 Specific flowchart of another mask preparation method provided by an embodiment of the present invention, refer to Figure 6 . Optionally, making a mask according to the spatial distribution pattern includes:

[0056] S41: Provide a blank mask, and the blank mask includes a substrate and a light-shielding layer and a photoresist layer laminated in sequence on one side of the substrate;

[0057] Among them, the substrate can be made of a light-transmissive material, the light-shielding layer is attached to one side of the substrate, and a photoresist layer is also provided on the light-shielding layer. The photoresist can be dissolved, decomposed or fall off in the exposed area when exposed and developed.

[0058] S42: Draw a mask layout file according to the spatial distribution pattern;

[0059] Among them, the spatial distribution pattern obtained in step S3 can be drawn into a mask layout file, and a mask layout file can be drawn using layout file drawing software.

[0060] S43: Irradiate the blank mask with non-contact exposure according to the mask layout;

[0061] Among them, according to the layout of the photomask, the lithography equipment can be used to expose and irradiate the light-transmitting parts of the blank photomask.

[0062] S44: After development and fixing, the photoresist in the exposed area dissolves and peels off, exposing the light-shielding layer in the exposed area;

[0063] Among them, after development and fixing, the photoresist on the irradiated area of the blank photomask dissolves, decomposes or peels off. The light-shielding layer on the irradiated area of the blank photomask loses the protection of the photoresist layer and is exposed.

[0064] S45: Etch off the exposed light-shielding layer to form a light-transmitting area, while the light-shielding layer protected by the photoresist forms an opaque area.

[0065] Among them, chemical substances such as strong acids or strong alkalis can be used to react with the light-shielding layer to etch off the light-shielding layer exposed after the photoresist layer is removed in step S44. The areas on the photomask where the photoresist layer is not removed are protected by the photoresist layer and avoid the reaction of the light-shielding layer with chemical substances such as strong acids or strong alkalis. Therefore, after the reaction, only the irradiated area on the blank photomask is light-transmitting because there is no light-shielding layer, while the areas outside the irradiated area on the blank photomask are still covered by the light-shielding layer and cannot transmit light. Thus, a photomask with a spatially distributed pattern capable of transmitting light is formed.

[0066] Furthermore, it further includes:

[0067] S46: Remove the photoresist layer on the photomask and clean the photomask.

[0068] Among them, the etched photomask can be cleaned with a cleaning agent to clean the remaining photoresist layer on the photomask.

[0069] The material of the light-shielding layer can be determined according to actual needs, as long as it can block light and can be etched. Optionally, the light-shielding layer includes chromium.

[0070] An embodiment of the present invention also discloses a preparation device for a photomask. The preparation device includes:

[0071] A three-dimensional pattern forming module, configured to obtain the position, hole depth, and hole diameter parameters of each hole of the target film layer and form a three-dimensional pattern;

[0072] An exposure pattern obtaining module, configured to obtain an exposure pattern according to the three-dimensional pattern and the material characteristics of the target film layer;

[0073] A spatial distribution pattern calculation module, configured to calculate the spatial distribution pattern of the photomask according to the exposure pattern;

[0074] A photomask manufacturing module, configured to manufacture a photomask according to the spatial distribution pattern.

[0075] The above modules can be software modules or hardware modules, as long as they can meet their functions. Among them, the preparation device provided by the embodiment of the present invention includes the preparation method provided by any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the preparation method.

[0076] The embodiment of the present invention further discloses a mask, which is formed by any one of the preparation methods provided in the above embodiments.

[0077] The mask provided in the embodiments of the present invention is obtained by the preparation method provided in any embodiment of the present invention. This mask can produce target film layers with varying pore depths and / or pore diameters with a single photolithography pass. This significantly simplifies the number of exposures and reduces production time, thereby lowering production costs and increasing yields.

[0078] Figure 7 A schematic diagram of the structure of a display panel provided by an embodiment of the present invention, referring to Figure 7 The embodiment of the present invention further discloses a display panel, which includes a first display area 11 and a second display area 12 adjacent to the first display area 11. The second display area 12 is multiplexed into an optical setting area 13. The optical setting area 13 includes a phase disorder layer ( Figure 6 The phase disorder layer is prepared by a single exposure process using the above mask.

[0079] Among them, the first display area 11 may include a phase disorder layer, or may not include a phase disorder layer. The embodiment of the present invention is not limited to the structure of the first display area 11. The second display area 12 may be surrounded by the first display area 11, or only part of the edge may be adjacent to the first display area 11. The phase disorder layer may be externally mounted on the display panel of the second display area 12, or the phase disorder layer may be attached to the display panel. The phase disorder layer may have one or more holes with different hole depth, hole diameter and hole shape. After the light enters these holes, the parameters such as the phase of the outgoing light when it is emitted from the hole to the outside will change. Therefore, the disordered transformation of light can be achieved through the phase disorder layer, thereby achieving the effect of reducing diffraction.

[0080] Figure 8 A flow chart of a one-shot exposure process provided by an embodiment of the present invention is provided. Figure 9 A schematic diagram of a structure for preparing a phase disorder layer by a single exposure process according to an embodiment of the present invention is provided. Figure 8 and Figure 9 Optionally, the phase disorder layer is prepared by a single exposure process using a mask, including:

[0081] S51: forming a base film layer 21 of a phase disorder layer in the optical setting area;

[0082] Among them, the base film layer 21 of the phase scrambling layer can be a film layer structure without a hole structure. The base film layer can be disposed only in the optical setting area or on the entire display panel.

[0083] S52: Dispose the mask plate 22 on one side of the base film layer 21, and dispose a converging lens group 23 between the mask plate 22 and the base film layer 21;

[0084] Among them, a lens group 23 for adjusting the optical path can be disposed. The lens group 23 is disposed on one side of the mask plate 22, and the base film layer 21 is disposed on the side of the lens group 23 away from the mask plate 22.

[0085] S53: Irradiate the mask plate 22 with a collimated beam. After the collimated beam is diffracted by the mask plate and converged by the converging lens group 23, the base film layer 21 is exposed;

[0086] Among them, the collimated beam can be irradiated onto the mask plate 22, the mask plate 22 diffracts the beam, and then the lens group 23 changes the beam of the light, converges the light and irradiates it onto the base film layer 21 to realize the exposure of the base film layer 21.

[0087] S54: After development, fixing and etching, a phase scrambling layer is formed.

[0088] Among them, the base film layer that has been exposed can be developed, fixed and etched, so as to form a phase scrambling layer with required holes on the base film layer.

[0089] In the embodiment of the present invention, by using the diffraction principle, diffraction spots are formed through the spatial distribution pattern on the mask plate, and a phase scrambling layer with holes is obtained by exposing with the diffraction spots. Only one photolithography is required to obtain a phase scrambling layer with different hole depths and / or hole diameters. The number of exposure times is greatly simplified, the production time is reduced, and the production cost is further reduced and the yield is increased.

[0090] Optionally, the phase scrambling layer includes a plurality of holes with different positions, and the hole depths and / or hole diameters of any two holes are different.

[0091] Among them, the light transmitted through different holes on the phase scrambling layer has different phases, so a plurality of different holes can be set. By changing the hole depth and / or hole diameter of the holes, each hole on the phase scrambling layer is made different, so that the light transmitted through each hole has its own different phase. The light transmitted through the display panel is disordered as much as possible, and the influence on the imaging quality caused by the diffraction effect of the metal traces when the light passes through the display panel is reduced.

[0092] The embodiment of the present invention also discloses a display device, including the above-mentioned display panel.

[0093] Among them, the display device provided by the embodiment of the present invention includes the display panel provided by the above embodiment, and has the beneficial effects corresponding to the display panel.

[0094] The embodiment of the present invention also discloses a lithography device, which uses the above mask to prepare a target film layer through a single exposure process. The target film layer includes a plurality of holes with different positions, and the hole depths and / or hole diameters of at least two holes are different.

[0095] Among them, when lithographing a semiconductor material using a lithography device, the prior art often uses different masks to lithograph holes with different hole depths, and forms holes with different hole depths and / or hole diameters on the semiconductor material through multiple lithographies. However, the processing method of multiple lithographies not only consumes a large amount of energy, takes a long time in production and manufacturing, and has a low output. Moreover, it requires the cooperation of multiple masks for production, resulting in high production costs.

[0096] Based on the above technical problems, the embodiment of the present invention provides a lithography device, in which the mask uses the diffraction principle to form the required holes on the semiconductor material in a single lithography process. There is no need for multiple lithographies, nor the cooperation of multiple masks. It not only reduces energy consumption but also reduces production costs. At the same time, there is no need to accurately align multiple masks, which reduces the production time and improves the product yield.

[0097] Note that the above is only the preferred embodiment of the present invention and the applied technical principle. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described here. Various obvious changes, re-adjustments, combinations with each other and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments only. Without departing from the concept of the present invention, it can also include more other equivalent embodiments, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for preparing a photomask, characterized in that, The mask is used to prepare a target film layer in a single exposure process. The target film layer includes a plurality of holes with different positions, and the hole depths and / or hole diameters of at least two of the holes are different; The preparation method includes: Obtaining the position, hole depth, and hole diameter parameters of each of the holes in the target film layer to form a three-dimensional pattern; Obtaining an exposure pattern based on the three-dimensional pattern and the material properties of the target film layer; Calculating the spatial distribution pattern of the mask based on the exposure pattern; Fabricating the mask according to the spatial distribution pattern; The obtaining the exposure pattern based on the three-dimensional pattern and the material properties of the target film layer includes: Determining the spot positions in the exposure pattern according to the positions of each of the holes; Determining the spot diameter and spot intensity of the exposure pattern according to the hole diameter, hole depth, and the material properties of each of the holes; Determining the exposure pattern according to the spot positions, the spot diameter, and the spot intensity; 2. The preparation method according to claim 1, characterized in that, The calculating the spatial distribution pattern of the mask based on the exposure pattern includes: Regarding the exposure pattern as a frequency-domain function, performing a two-dimensional Fourier transform on the frequency-domain function to obtain the spatial distribution pattern of the mask in the spatial domain.

3. The preparation method according to claim 1, characterized in that, The fabricating the mask according to the spatial distribution pattern includes: Providing a blank mask, which includes a substrate and a light-shielding layer and a photoresist layer sequentially stacked on one side of the substrate; Drawing a mask layout file according to the spatial distribution pattern; Irradiating the blank mask by non-contact exposure according to the mask layout file; After development and fixing, the photoresist in the exposed area dissolves and falls off, exposing the light-shielding layer in the exposed area; Etching away the exposed light-shielding layer to form a light-transmitting area, while the light-shielding layer protected by the photoresist forms a light-impermeable area.

4. The preparation method according to claim 3, characterized in that, It further includes: Removing the photoresist layer on the mask and cleaning the mask.

5. The preparation method according to claim 3, wherein The light-shielding layer includes chromium.

6. A photomask, characterized in that, Formed by using the preparation method according to any one of claims 1 to 5.

7. A display panel, characterized in that The display panel includes a first display area and a second display area adjacent to the first display area. The second display area is multiplexed as an optical setting area. The optical setting area includes a phase scrambling layer, and the phase scrambling layer is prepared by a single exposure process using the mask according to claim 6.

8. The display panel according to claim 7, characterized in that, The preparing the phase scrambling layer by using the mask through a single exposure process includes: Forming a base film layer of the phase scrambling layer in the optical setting area; Placing the mask on one side of the base film layer, and arranging a converging lens group between the mask and the base film layer; Irradiating the mask with a collimated beam, and the collimated beam is diffracted by the mask and converged by the converging lens group to expose the base film layer; After development, fixing, and etching, the phase scrambling layer is formed.

9. The display panel according to claim 7, wherein, The phase scrambling layer includes a plurality of holes with different positions, and the hole depths and / or hole diameters of at least two of the holes are different.

10. A display device, characterized in that, Including the display panel according to any one of claims 7 to 9.

11. A lithographic apparatus, characterized in that, Preparing a target film layer by a single exposure process using the mask according to claim 6. The target film layer includes a plurality of holes with different positions, and the hole depths and / or hole diameters of at least two of the holes are different.

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