Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium

Abstract

The present invention relates to a manufacturing method of a semiconductor device, a substrate processing apparatus, and a recording medium. In a substrate processing apparatus that heats a substrate, film qualities among substrates are made uniform even if a processing environment among the substrates changes. The substrate processing apparatus has: a carry-in process of carrying a substrate into a processing chamber; a film processing process of supplying a gas to the substrate in the processing chamber through a dispersion plate while heating the dispersion plate provided in a shower head upstream of the processing chamber with a shower head heater, and exhausting the gas from the processing chamber; a carry-out process of carrying the substrate out of the processing chamber; a temperature measurement process of measuring a temperature of the shower head before carrying in a next substrate to be processed; and a temperature adjustment process of comparing the temperature of the shower head with temperature information set in advance after the temperature measurement process, and controlling the shower head heater provided in the shower head to operate so as to approach the temperature set in advance when a difference between them is larger than a predetermined value.

Description

TECHNICAL FIELD

[0001] The present application relates to a manufacturing method of a semiconductor device, a substrate processing apparatus, and a recording medium. BACKGROUND

[0002] As an apparatus for manufacturing a semiconductor device, there is a single wafer apparatus (for example, Patent Literature 1) which processes each wafer. In the single wafer apparatus, for example, a wafer is heated and a gas is supplied to the wafer, thereby forming a film which constitutes a part of the semiconductor device.

[0003] When the same kind of film is formed on a plurality of wafers, it is desirable to set the temperature condition to be the same. The wafer temperature is affected by a heater, a processing chamber wall.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT LITERATURE

[0006] Patent Literature 1: Japanese Patent Application Publication No. 2012-54399 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] When a plurality of wafers are processed, the replacement of the wafers needs to be performed. However, at the time of replacement, the temperature of the processing chamber drops, and the like, and the processing environment sometimes changes before and after that. As a result, the film quality deviates between the wafers.

[0009] An object of the present application is to make the film quality uniform between wafers even if the processing environment changes between the wafers in a substrate processing apparatus which performs a heating process on a wafer.

[0010] MEANS FOR SOLVING THE PROBLEMS

[0011] The present application provides a technology having the following steps: a wafer is carried into a processing chamber in a carrying-in step; a film is processed in a film processing step in which a gas is supplied to the wafer in the processing chamber through a diffusion plate provided in a shower head while the diffusion plate of the shower head is heated by a shower head heater provided in the shower head, and the gas is exhausted from the processing chamber; the wafer is carried out of the processing chamber in a carrying-out step; the temperature of the shower head is measured before the wafer to be processed next is carried in in a temperature measuring step; and the temperature of the shower head is compared with temperature information set in advance after the temperature measuring step, and the shower head heater provided in the shower head is controlled to operate so as to approach the temperature set in advance when the difference between the temperature of the shower head and the temperature set in advance is larger than a predetermined value.

[0012] EFFECTS OF THE INVENTION

[0013] According to one embodiment of the present application, in a substrate processing apparatus that performs a heat treatment on a substrate, film quality uniformity between substrates can be achieved even if the processing environment between the substrates changes. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 is a diagram showing a schematic configuration example of a substrate processing apparatus involved in one embodiment of the present application.

[0015] Figure 2 is a diagram showing a gas supply section provided in a substrate processing apparatus involved in one embodiment of the present application.

[0016] Figure 3 is a diagram showing a shower head heater provided in a substrate processing apparatus involved in one embodiment of the present application.

[0017] Figure 4 is a diagram showing a shower head heater and its surrounding configuration provided in a substrate processing apparatus involved in one embodiment of the present application.

[0018] Figure 5 is a diagram showing a controller provided in a substrate processing apparatus involved in one embodiment of the present application.

[0019] Figure 6 is a diagram showing a table possessed by a controller provided in a substrate processing apparatus involved in one embodiment of the present application.

[0020] Figure 7 is a diagram showing a table possessed by a controller provided in a substrate processing apparatus involved in one embodiment of the present application.

[0021] Figure 8 is a diagram showing a table possessed by a controller provided in a substrate processing apparatus involved in one embodiment of the present application.

[0022] Figure 9 is a flowchart showing a substrate processing procedure involved in one embodiment of the present application.

[0023] Figure 10 is a flowchart showing a film processing procedure involved in one embodiment of the present application.

[0024] BRIEF DESCRIPTION OF DRAWINGS

[0025] 100... substrate processing apparatus, 200... substrate, 400... controller DETAILED DESCRIPTION

[0026] The following will explain one embodiment of the present application with reference to the drawings. Figure 1The description will be given for the manner of implementation. Note that the drawings used in the following description are schematic drawings, and the dimensional relationship of the elements, the ratio of the elements, and the like on the drawings do not necessarily agree with the actual situation. In addition, the dimensional relationship of the elements, the ratio of the elements, and the like are not necessarily consistent among the plurality of drawings.

[0027] [First Mode]

[0028] First, the first mode will be described.

[0029] Figure 1 An explanatory diagram of a substrate processing apparatus involved in the present mode will be described. Hereinafter, each configuration will be specifically described with the substrate processing apparatus 100 as an example. Figure 1

[0030] The substrate processing apparatus 100 is provided with a vessel 202. The vessel 202 is configured as a flat, closed vessel having a circular cross section, for example. In addition, the vessel 202 is configured of a metal material such as aluminum (Al) or stainless steel (SUS), for example. Inside the vessel 202, a processing space 205 in which a substrate S such as a silicon wafer is processed, and a transfer space 206 through which the substrate S passes when being transferred to the processing space 205 are formed. The vessel 202 is configured of an upper vessel 202a and a lower vessel 202b. A partition plate 208 is provided between the upper vessel 202a and the lower vessel 202b. The structure constituting the processing space 205 is referred to as a processing chamber 201. In the present mode, the processing chamber 201 is mainly constituted of a dispersion plate 234 and a substrate support table 212, which will be described later.

[0031] On the side surface of the lower vessel 202b, a substrate loading / unloading port 148 is provided adjacent to a gate valve 149, and the substrate S moves between transfer chambers (not shown) via the substrate loading / unloading port 148. A plurality of lift pins 207 are provided on the bottom of the lower vessel 202b. In addition, the lower vessel 202b is grounded.

[0032] A substrate support portion 210 that supports the substrate S is disposed in the processing space 205. The substrate support portion 210 mainly has a substrate placement surface 211 on which the substrate S is placed, a substrate support table 212 having the substrate placement surface 211 on the surface, and a heater 213 as a heating source provided in the substrate support table 212. The heater 213 is also referred to as a substrate support table heater. On the substrate support table 212, through holes 214 through which the lift pins 207 pass are respectively provided at positions corresponding to the lift pins 207.

[0033] In the substrate support table 212, a temperature measurer 216 as a first temperature measurer that measures the temperature of the heater 213 is provided. The temperature measurer 216 is connected to a temperature measuring portion 221 as a first temperature measuring portion via a wiring 220. ​

[0034] The heater 213 is connected with a wiring 222 for supplying electric power. The temperature measurer 216 is connected with a heater control section 223.

[0035] The temperature measuring section 221 and the heater control section 223 are electrically connected with a controller 400 described later. The controller 400 sends control information to the heater control section 223 in accordance with temperature information measured by the temperature measuring section 221. The heater control section 223 controls the heater 213 with reference to the received control information.

[0036] The substrate placing stage 212 is supported by a shaft 217. The shaft 217 penetrates the bottom of the vessel 202, and further is connected with a lifting section 218 outside the vessel 202.

[0037] The lifting section 218 mainly has a support shaft 218a that supports the shaft 217, and a moving section 218b that lifts or rotates the support shaft 218a. The moving section 218b has, for example, a lifting mechanism 218c that includes a motor for lifting, and a rotating mechanism 218d such as a gear for rotating the support shaft 218a.

[0038] In the lifting section 218, an instruction section 218e for instructing lifting and rotation to the moving section 218b can also be provided as a part of the lifting section 218. The instruction section 218e is electrically connected with the controller 400. The instruction section 218e controls the moving section 218b based on an instruction from the controller 400.

[0039] The shaft 217 and the substrate placing stage 212 are lifted by operating the lifting section 218, whereby the substrate placing stage 212 can lift the substrate S placed on the placing surface 211. Note that the periphery of the lower end of the shaft 217 is covered by a bellows 219, whereby the inside of the processing space 205 is maintained airtight.

[0040] For the substrate placing stage 212, at the time of carrying in and out of the substrate S, the substrate placing surface 211 is lowered to a position opposite to the substrate carrying-in and carrying-out port 148, and at the time of processing of the substrate S, as shown in FIG. 2, the substrate S is lifted up to a processing position within the processing space 205. Figure 1

[0041] A shower head (also called SH) 230 as a gas dispersing mechanism is provided at the upper portion (upstream side) of the processing space 205. A through-hole 231a is provided on a cover 231 of the shower head 230. The through-hole 231a is in communication with a common gas supply pipe 242 described later. Within the shower head 230, a buffer space 232 is formed.

[0042] ​A rectifying plate 270 is provided in the buffer space 232. The rectifying plate 270 is a circular cone shape having the gas introduction port 241 as the center and expanding in diameter as it goes toward the radial direction of the wafer 200. The edge lower end of the rectifying plate 270 is configured to be located at a more outer periphery than the end of the substrate S. The rectifying plate 270 is configured so that the supplied gas moves toward the dispersion plate 234 described later with high efficiency. Details of the rectifying plate 270 are described later.

[0043] An electrode 251 is provided on the shower head 230. The electrode 251 is made of metal and is configured to have a higher thermal conductivity than the dispersion plate 234. The electrode 251 is configured in a circumferential shape with the through hole 231a as the center.

[0044] A plasma control section 283 is connected to the electrode 251 via a wiring 252. The plasma of the cleaning gas described later is generated in the processing space 205 in the shower head 230 based on an instruction from the plasma control section 253.

[0045] The upper container 202a has a flange, and the support block 233 is placed and fixed on the flange. The support block 233 has a flange 233a, and the dispersion plate 234 is placed and fixed on the flange 233a. Further, the lid 231 is fixed to the upper surface of the support block 233.

[0046] Next, the gas supply system will be described using Figure 2 A first gas supply pipe 243a, a second gas supply pipe 244a, a third gas supply pipe 245a, and a fourth gas supply pipe 248a are connected to the common gas supply pipe 242.

[0047] A first gas source 243b, a mass flow controller (MFC) 243c as a flow controller (flow control section), and a valve 243d as an on-off valve are provided in this order from the upstream direction on the first gas supply pipe 243a.

[0048] The first gas source 243b is a source of a first gas containing a first element (also referred to as "first element-containing gas"). The first element-containing gas is a raw material gas, that is, one of the processing gases. Here, the first element is, for example, silicon (Si). That is, the first element-containing gas is, for example, a silicon-containing gas. In the present mode, an example in which hexachlorodisilane (Si2Cl6. Also referred to as HCD.) gas is used as the silicon-containing gas will be described.

[0049] The first gas supply system 243 (also referred to as the silicon-containing gas supply system) is mainly configured using the first gas supply pipe 243a, the mass flow controller 243c, and the valve 243d.

[0050] (Second Gas Supply System)

[0051] On the second gas supply pipe 244a, a second gas source 244b, a mass flow controller (MFC) 244c as a flow controller (flow control section), and a valve 244d as an on-off valve are provided in this order from the upstream direction.

[0052] The second gas source 244b is a source of a second gas containing a second element (hereinafter, also referred to as "second element-containing gas"). The second element-containing gas is one of the processing gases. Note that the second element-containing gas can be considered as a reaction gas or a modification gas.

[0053] Here, the second element-containing gas contains a second element different from the first element. As the second element, any one of oxygen (O), nitrogen (N), and carbon (C), for example, is used. In this embodiment mode, the second element-containing gas is, for example, a nitrogen-containing gas, and an example in which ammonia (NH3) gas is used will be described.

[0054] When the substrate S is processed with the second gas in a plasma state, a remote plasma unit 244e can be provided on the second gas supply pipe.

[0055] The second gas supply system 244 (also referred to as a reaction gas supply system) is mainly configured with the second gas supply pipe 244a, the mass flow controller 244c, and the valve 244d. The plasma generation section can be included in the second gas supply system 244.

[0056] On the third gas supply pipe 245a, a third gas source 245b, a mass flow controller (MFC) 245c as a flow controller (flow control section), and a valve 245d as an on-off valve are provided in this order from the upstream direction.

[0057] The third gas source 245b is a source of an inactive gas. The inactive gas is, for example, nitrogen (N2) gas.

[0058] The third gas supply system 245 is mainly configured with the third gas supply pipe 245a, the mass flow controller 245c, and the valve 245d.

[0059] In the substrate processing step, the inactive gas supplied from the inactive gas source 245b functions as a purge gas for purging the gas remaining in the container 202 and the shower head 230.

[0060] On the fourth gas supply pipe 248a, a fourth gas source 248b, a mass flow controller (MFC) 248c as a flow controller (flow control section), and a valve 248d as an on-off valve are provided in this order from the upstream direction.

[0061] The fourth gas source 248b is a source of a cleaning gas. The cleaning gas is, for example, NF3or F2gas.

[0062] The third gas supply system 248 is mainly configured using the fourth gas supply pipe 248a, the mass flow controller 248c, and the valve 248d.

[0063] The purge gas supplied from the fourth gas source 248b is formed into a plasma state while in the purge chamber 201 and the shower head 230. The purge gas in the plasma state removes by-products remaining in the vessel 202 and the shower head 230.

[0064] The processing space 205 is communicated with an exhaust pipe 262 via an exhaust buffer structure 261. The exhaust buffer structure 261 is circumferentially provided in a manner of surrounding the outer periphery of the substrate S. In this embodiment, it is disposed between the partition plate 208 and the upper vessel 202a.

[0065] The exhaust pipe 262 is connected to the upper vessel 202a at the upper side of the exhaust buffer structure 261 in a manner of being communicated with the processing space 205 via the exhaust buffer structure 261. An APC (Auto Pressure Controller) 266 as a pressure controller is provided in the exhaust pipe 262, which controls the processing space 205 at a prescribed pressure. The APC 266 has a valve body (not shown) with an adjustable opening degree, which adjusts the flow conductance of the exhaust pipe 262 according to an instruction from the controller 400.

[0066] In the exhaust pipe 262, a valve 267 is provided at the upstream side of the APC 266. The exhaust pipe 262 and the valve 267 and the APC 266 are collectively referred to as an exhaust system. Further, a DP (Dry Pump) 269 is provided downstream of the exhaust pipe 262. The DP 269 exhausts the atmosphere of the processing space 205 via the exhaust pipe 262.

[0067] For the gas supplied to the processing space 205 via the diffusion plate 234, after contacting the substrate S, it moves to the exhaust buffer structure 261 and is exhausted from the exhaust pipe 262. In this gas flow, the pressure under the center portion of the diffusion plate 234 becomes higher than that under the edge portion of the diffusion plate 234. In the case of the center portion, the gas is retained due to difficulty in escaping to the exhaust buffer space 261, while under the edge portion, the gas easily escapes under the influence of the exhaust pump 269. Thus, under the center portion of the diffusion plate 234, the temperature is increased due to the retention of the gas under the influence of the heated gas. Compared with under the edge portion of the diffusion plate 234, the temperature of the edge portion is lower than that of the center.

[0068] Next, using Figure 3 , Figure 4The detailed structure of the rectifier plate 270 will be described. In the rectifier plate 270, a shower head heater 271 is provided, and is configured to heat at least any one of the rectifier plate 270, the atmosphere in the buffer space 232, the diffusion plate 234, and the lid 231. The shower head heater 271 is also referred to as a shower head heater or a rectifier portion heating portion.

[0069] As shown in FIG. 6, the shower head heater 271 is configured of powder, and is configured to heat each region (the center portion 271a, the intermediate portion 271b, and the edge portion 271c). Figure 3

[0070] Figure 3 The lower drawing in FIG. 6 illustrates a view of the shower head heater 271 provided in the rectifier plate 270, as viewed from the wafer 200 side. As shown in the drawing, the shower head heater 271 is configured of a plurality of regions. One of the regions, for example, the intermediate portion 271b, is configured so as to be disposed below the electrode 251. By being configured like this, even if the temperature is different in the lower portion of the electrode 251, the temperature of the surface (the surface opposite to the substrate S) of the diffusion plate 234 can be controlled so as to be uniform.

[0071] Next, the configuration of the periphery of the shower head heater 271 will be described. In the shower head heater 271, a power supply line 2811 is connected to each region, and the temperature of the shower head heater 271 can be controlled for each region. The power supply line 2811 is connected to a power supply control portion 2812 that supplies power to the shower head heater 271. Figure 4

[0072] Specifically, the power supply line 2811a is connected to the center portion 271a, the power supply line 2811b is connected to the intermediate portion 271b, and the power supply line 2811c is connected to the edge portion 271c. Further, the power supply line 2811a is connected to the power supply control portion 2812a, the power supply line 2811b is connected to the power supply control portion 2812b, and the power supply line 2811c is connected to the power supply control portion 2812c.

[0073] The power control portion 2812 (the power supply control portion 2812a, the power supply control portion 2812b, and the power supply control portion 2812c) as the temperature control portion is electrically connected to the controller 400 via a wiring 2813. The controller 400 transmits a power value (set temperature data) for controlling the shower head heater to the power control portion 2812, and the power control portion 2812 that has received the power value supplies power based on the information to the shower head heater (the center portion 271a, the intermediate portion 271b, and the edge portion 271c), and controls the temperature of the shower head heater.

[0074] ​​Further, in the vicinity of the shower head heater 271, temperature detecting portions 2821 corresponding to the respective regions are provided. The temperature detecting portions 2821 are connected to a temperature measuring portion 2823 via wirings 2822, and the temperature measuring portion 2823 configured to be able to detect the temperature of each region is connected to the controller 400 via a wiring 2824.

[0075] Specifically, a temperature detecting portion 2821a is provided in the vicinity of the center portion 271a. The temperature detecting portion 2821a is connected to a second temperature measuring portion 2823a via a wiring 2822a. A temperature detecting portion 2821b is provided in the vicinity of the intermediate portion 271b. The temperature detecting portion 2821b is connected to a second temperature measuring portion 2823b via a wiring 2822b. A temperature detecting portion 2821c is provided in the vicinity of the edge portion 271c. The temperature detecting portion 2821c is connected to a third temperature measuring portion 2823c via a wiring 2822c.

[0076] The substrate processing apparatus 100 has a controller 400 that controls the operation of each portion of the substrate processing apparatus 100.

[0077] The controller 400 is shown in outline in Figure 5 The controller 400 as a control portion (control means) is configured as a computer having a CPU (Central Processing Unit) 401, a RAM (Random Access Memory) 402, a storage portion 403 as a storage device, and an I / O port 404. The RAM 402, the storage portion 403, and the I / O port 404 are configured to be able to exchange data with the CPU 401 via an internal bus 405. The transmission and reception of data within the substrate processing apparatus 100 is performed in accordance with an instruction from a transmission and reception instruction portion 406 that is one of the functions of the CPU 401.

[0078] A network transmission and reception portion 293 that is connected to the upper device 294 via a network is provided. The network transmission and reception portion 293 can receive information related to the processing history of the substrate S in the lot, the processing schedule, and the like.

[0079] The storage portion 403 is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage portion 403, a process recipe 409 in which the steps and conditions of the substrate processing are described, and a control program 410 that controls the operation of the substrate processing apparatus are stored in a readable manner. Further, a first shower head temperature table 411, a second shower head temperature table 412, and a control value table 413 described later are stored in a readable and writable manner.

[0080] Note that the process recipe is combined in a manner that enables the controller 400 to execute each step in the substrate processing procedure described later and obtain a prescribed result, and functions as a program. Hereinafter, the process recipe, control program, and the like will be collectively referred to simply as a program. Note that in the present specification, the case where the term program is used includes only the case where the process recipe is included alone, only the case where the control program is included alone, or both. In addition, the RAM 402 is configured as a memory area (work area) that temporarily stores programs, data, and the like read by the CPU 401.

[0081] The I / O port 404 is connected to each of the components of the substrate processing apparatus 100, such as the gate valve 149, the lift mechanism 218, each pressure regulator, each pump, the heater control section 223, the plasma control section 253, and the like.

[0082] The CPU 401 is configured to read and execute the control program from the storage section 403, and read the process recipe from the storage section 403 in accordance with the input of an operation instruction from the input / output device 291 or the like. Furthermore, the CPU 401 is configured to control the opening / closing operation of the gate valve 149, the lifting operation of the lift mechanism 218, the temperature measurement by the temperature measurement section 221, the heater control section 223, the plasma control section 283, the on / off control of each pump, the flow rate adjustment operation of the mass flow controller, the valve, and the like, in accordance with the content of the read process recipe.

[0083] Note that the controller 400 can be configured by installing a computer installation program or the like using an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 292 in which the above-described program is stored, in the case of the controller 400. Note that the means for supplying the program to the computer is not limited to the case where it is supplied via the external storage device 292. For example, the program can be supplied without passing through the external storage device 292 using a communication means such as the Internet or a dedicated line. Note that the storage section 403 and the external storage device 292 can be configured as a recording medium that can be read by a computer. Hereinafter, they will be collectively referred to simply as a recording medium. Note that in the present specification, the case where the term recording medium is used includes only the case where the storage section 403 is included alone, only the case where the external storage device 292 is included alone, or both.

[0084] Next, the use of the first shower head temperature table 411 will be described. Figure 6 The first shower head temperature table 411 will be described. The vertical axis shows the batch number, and the horizontal axis shows the SH temperature corresponding to the substrate number. In the table, the temperature of the shower head detected by the temperature measurement section 2823 is recorded. Here, for example, the data detected by the temperature measurement section 2823b among the temperature measurement sections 2823 is recorded.

[0085] Here, the number of substrates to be processed in one batch is set to m (m is an arbitrary number). Also, the number of batches is shown in a case where it is more than n + 1 (n is an arbitrary number). Further, the number of substrates differs depending on the number of batches. For example, the first batch has m substrates, and the n-th batch has m - 2 substrates.

[0086] In Table 411, the temperature of the showerhead 230 measured by the first temperature measurement process S104 described later is recorded. In the first temperature measurement process S104, the temperature of the showerhead 230 is measured, for example, in the last substrate processing in the batch. In other words, the measurement is performed in the substrate processing before the next batch processing setting process S108 described later. If it is the first batch, the measurement is performed in the substrate processing of the m-th substrate, and if it is the n-th batch, the measurement is performed in the substrate processing of the m - 2-th substrate.

[0087] Next, the use of the first batch processing setting process S108 will be described. Figure 7 The second showerhead temperature table 412 will be described. The information of the batch number processed immediately before and the SH temperature information corresponding thereto are shown. The SH temperature information is the temperature information of the SH measured in the second temperature measurement process S114 described later. In the table, the temperature of the showerhead 230 detected by the temperature measurement unit 2823 is recorded.

[0088] Next, the use of the first batch processing setting process S108 will be described. Figure 8 The control value table 413 of the showerhead heater 271 will be described. Here, the control value of the showerhead heater 271 corresponding to Δt described later is shown. CaO, CaI, Ca2, Ca3 show the control value of the center portion 271a, CbO, CbI, Cb2, Cb3 show the control value of the intermediate portion 271b, and CcO, CcI, Cc2, Cc3 show the control value of the edge portion 271c. CaO, CbO, CcO are initial values. The closer to Ca3, Cb3, Cc3, the higher the temperature at which the heater is controlled.

[0089] Next, a process of forming a thin film on a substrate S using the substrate processing apparatus 100 configured as described above as one process of a semiconductor manufacturing process will be described. Note that in the following description, the operation of each portion configuring the substrate processing apparatus is controlled by the controller 400.

[0090] First, the use of the first batch processing setting process S108 will be described. Figure 9 The substrate processing process of the batch unit will be described.

[0091] (The n-th batch processing process S102)

[0092] The n-th batch processing process S102 will be described. Here, n = 1 or more.

[0093] In the n-th batch processing step S102, the substrates S in the n-th batch are processed. Here, a prescribed number of substrates S in the n-th batch are subjected to film formation processing by the processing space 205. At the time of film formation processing, the shower head heater 271 is heated to a desired temperature in a manner that the edge portion of the diffuser plate 234 is uniformly heated in-plane, specifically, the surface opposite to the substrate S.

[0094] Heating by the shower head heater 271 is performed as follows. As described above, the edge portion of the diffuser plate 234 is structured so that the temperature is apt to decrease compared to the center. In addition, since gas stagnates under the center portion of the diffuser plate 234, the center portion of the diffuser plate 234 is affected by this and the heat becomes high.

[0095] In this situation, the shower head heater 271 is controlled so that the temperature of the edge portion 271c is higher than the temperature of the center portion 271a, to uniformly heat the diffuser plate 234. By being controlled in this way, the decrease in the temperature of the edge portion of the diffuser plate 234 can be compensated for, and the diffuser plate 234 can be uniformly heated.

[0096] Each region is controlled with the initial values CaO, CbO, CcO of the control value table 413.

[0097] After film formation is completed, the processed substrate S is carried out from the substrate processing apparatus 100 in preparation for replacement with the next substrate S, and the unprocessed substrate S is carried in thereafter. Details of the film formation processing will be described later.

[0098] (First temperature measurement step S104)

[0099] Next, the first temperature measurement step S104 will be described.

[0100] In the first temperature measurement step S104, the temperature detection portion 2821 measures the temperature of the shower head 230 in the n-th batch processing step S102. Specifically, the temperature of the diffuser plate 234 is measured. The temperature measurement portion 2823 records the measured value measured by the temperature detection portion 2821 as reference data in the shower head temperature table 411. Here, for example, the temperature detection portion 2821b performs detection, and the temperature measurement portion 2823b records in the shower head temperature table 411.

[0101] Next, the timing of detecting the temperature will be described.

[0102] As described above, in the n-th batch processing step S102, a plurality of substrates S are processed. This step is performed, for example, immediately after the last substrate processing of the n-th batch is performed. If it is the 1st batch, the measurement is performed immediately after the substrate processing of the m-th substrate is performed, and if it is the n-th batch, the measurement is performed immediately after the substrate processing of the m-2nd substrate is performed. By performing the measurement at such a timing, the temperature can be stably measured. Note that this step can also be performed in parallel with the last substrate processing in the batch, for example.

[0103] (Determination S106)

[0104] Next, the determination S106 will be described.

[0105] After the n-th batch processing step S102 and the first temperature measurement step S104, the process moves to the determination S106. Here, it is determined whether the prescribed number of batches is processed. If it is determined that the prescribed number of batches is processed, the process is ended. If it is determined that the prescribed number of batches is not processed, the process moves to the next batch processing setting step S108.

[0106] (Next Batch Processing Setting Step S108)

[0107] Next, the next batch processing setting step S108 will be described. Here, the substrate processing apparatus 100 is set in a manner that can cope with the batch to be processed next. For example, in the case where the n-th batch is processed, it is set to be able to process the n+1-th batch. As an example of the setting, the transfer robot is switched to be able to access the FOUP in which the n+1-th batch of substrates S is stored.

[0108] Note that here, since the n-th batch of substrates S is carried out of the substrate processing apparatus 100, the substrate mounting table 212 is in a state of waiting at the carrying position. Note that the next batch processing setting step S108 is also simply referred to as the setting step.

[0109] (Determination S110)

[0110] The determination S110 will be described. Here, it is determined whether maintenance of the substrate processing apparatus 100 is required. As the maintenance, for example, the deposits formed of the by-products attached to the walls of the processing chambers that constitute the processing space 205, the diffusion plate 234, and the like are removed. By the removal, the substrates S are not affected by the by-products when the substrates S are processed.

[0111] Therefore, in this determination, when the substrates are not affected by the by-products, it is determined as "No", and when the substrates are affected by the by-products, it is determined as "Yes". Note that as a quantitative criterion related to the influence of the by-products, for example, the number of substrates processed, the operation time of the apparatus, the gas supply time, and the like are used for the determination.

[0112] When the determination in S110 is YES, the process moves to a maintenance process S112. When the determination in S110 is NO, the process moves to the next batch process.

[0113] (Maintenance Process S112)

[0114] When the determination in S110 is YES, the process moves to a maintenance process S112. In the maintenance process S112, the attached matter is removed, for example, by dry etching or the like.

[0115] In addition, after the maintenance process S112, the temperature of the showerhead 230 is decreased. This is because the operation of the heater 213 is stopped, or a low-temperature liquid, gas, or the like is used to remove the attached matter.

[0116] In a case where the temperature of the showerhead 230 is decreased due to the maintenance process S112, as with the first mode, there is a possibility that the processing conditions are different between the previous batch process and the next batch process. Therefore, in the present mode, a temperature adjustment process S118 is implemented thereafter.

[0117] (Second Temperature Measurement Process S114)

[0118] Next, the second temperature measurement process S114 will be described.

[0119] After the next batch process setting process S108, the second temperature measurement process S114 is performed. Specifically, the temperature of the showerhead 230 immediately before the next batch of substrates S is carried in is measured. Here, the temperature detection section 2821 measures the temperature of the diffuser plate 234, which is a part of the showerhead 230. The temperature measurement section 2823 records the measured value measured by the temperature detection section 2821 in the showerhead temperature table 412. Here, the temperature detection section 2821 and the temperature measurement section 2823 used in the first temperature measurement process S104 are used in such a manner that the same detection conditions as those of the first temperature measurement process S104 are set. For example, the temperature detection section 2821b performs detection, and the temperature measurement section 2823b records in the showerhead temperature table 411.

[0120] In addition, there is a case where a variation occurs in the decrease in the temperature of the diffuser plate 234 between batches. As a reason therefor, for example, it is considered that there is a case where the time of the next batch process setting process S108 is different, or there is a case where a variation exists in the temperature in the n-th batch as the previous batch.

[0121] (Temperature Difference Calculation Process S116)

[0122] Next, the temperature difference calculation process S116 will be described.

[0123] Here, the temperature difference referred to is Figure 8The Δt described in the specification is the temperature difference between the temperature measured in the first temperature measurement process S104 and the temperature measured in the second temperature measurement process S114.

[0124] For example, the difference between the temperature in the batch number n of the table 411 and the temperature in the batch number n immediately before the batch processed is calculated.

[0125] (Determination S118)

[0126] Next, the determination S118 will be described.

[0127] As described above, in the case where the temperature of the shower head 230 decreases, there is a risk in the reproducibility of the substrate processing conditions. For example, there is a case where the temperature of the shower head differs between the substrate S processed last in the n-th batch and the substrate S processed first in the n+1-th batch.

[0128] Since the shower head 230 is disposed in the vicinity of the substrate S, the temperature thereof has an influence on the substrate S. In particular, the diffuser plate 234 opposes the surface of the substrate S, and if the temperature of the diffuser plate 234 decreases, the substrate processing is affected. In the case where the temperature of the diffuser plate 234 partially decreases, the uniformity of the in-plane processing of the substrate S is also affected.

[0129] In particular, the edge portion of the diffuser plate 234 is close to the exhaust buffer structure, and thus heat is easily taken away, and the edge portion of the diffuser plate 234 becomes lower in temperature than the center of the diffuser plate 234.

[0130] Due to such an influence, if the temperature of the shower head 230 differs, the film quality of the substrate S differs. Therefore, in the present embodiment, the temperature adjustment process S120 described later is performed. In the present process, the necessity of the temperature adjustment process S120 is determined.

[0131] The necessity of the temperature adjustment process S120 is determined using the table of Δt. Figure 8 For example, if Δt is 5°C or less, it is considered that the deviation of the temperature does not affect the substrate processing, and it is determined that the temperature adjustment process S120 described later is not necessary. If it is determined that it is not necessary, the processing in the n-th batch in the n+1-th batch is shifted to the substrate S processing process S102, and the processing of the substrate S is started. For example, in the case where Δt is greater than 5°C, it is determined that the temperature adjustment process S120 is necessary, and the processing is shifted to the temperature adjustment process S120.

[0132] (First temperature adjustment process S120)

[0133] Next, the temperature adjustment process S120 will be described. As described above, when switching to the next batch, the temperature of the shower head 230 decreases, and the processing state of the substrate S after processing differs from that of the previous batch. Therefore, in this process, the temperature of the shower head 230 is adjusted to a temperature that is the same degree as that of the previous batch. The specific method will be described below.

[0134] As described above, in the case where the Δt is higher than the prescribed temperature, the shower head 230 is heated in accordance with the Δt. The controller 400 controls the shower head heater 271 in accordance with the read control value, and heats the temperature of the shower head 230 to the prescribed temperature.

[0135] At this time, in accordance with the Δt, the temperature of the lower region of the center of the diffuser plate 234 is the temperature corresponding to the substrate processing, and the temperature of the edge portion of the diffuser plate 234 is higher than the center, that is, is controlled to be a temperature that is higher than the temperature corresponding to the substrate processing.

[0136] Next, the temperature adjustment process S120 of the present embodiment will be described. In this case, in the case where the Δt is higher than the prescribed temperature, the shower head 230 is heated in accordance with the Δt. The controller 400 controls the shower head heater 271 in accordance with the read control value, and heats the temperature of the shower head 230 to the prescribed temperature. At this time, in accordance with the Δt, the temperature of the lower region of the center of the diffuser plate 234 is the temperature corresponding to the substrate processing, and the temperature of the edge portion of the diffuser plate 234 is higher than the center, that is, is controlled to be a temperature that is higher than the temperature corresponding to the substrate processing.

[0137] Thus, by providing the heater 271 above the diffuser plate 234, the temperature of the diffuser plate 234 can be controlled more reliably. Therefore, even if there is a maintenance process, the substrate temperature within the substrate surface and between batches can be adjusted, and processing can be performed more reliably without deviation. If the temperature distribution of the diffuser plate 234 becomes uniform, the process moves to the second temperature adjustment process S122.

[0138] At this time, it is desirable to make the temperature of the center portion of the diffuser plate 234 higher than the edge portion based on the following reasons. The reason is the positional relationship between the shower head heater 271 and the diffuser plate 234.

[0139] As Figure 1As described above, the distance of the rectifier plate 270 from the center portion and the edge portion of the dispersion plate 234 is different. Specifically, the distance is made longer at the center portion and shorter at the edge portion. Due to this structure, the shower head heater 271 is farther away from the center portion of the dispersion plate 234 and closer to the edge portion. Therefore, the influence of the shower head heater 271 on the center portion is weaker than that on the edge portion. Further, in the first temperature adjustment process S120, the substrate placement portion 210 is waiting at the conveyance position, and the dispersion plate 234 is less likely to be affected by the heater 213.

[0140] Due to this, the center portion of the dispersion plate 234 becomes lower in temperature than the edge portion. Therefore, in this process, the temperature of the center portion of the dispersion plate 234 is set to be higher than that of the edge portion.

[0141] (Second temperature adjustment process S122)

[0142] Next, the second temperature adjustment process S122 will be described.

[0143] After the temperature distribution of the dispersion plate 234 is made uniform by the first temperature adjustment process S122, the shower head heater 271 is set to correspond to the film processing process S102. Specifically, the temperature of the center portion of the dispersion plate 234 is set to be lower than that of the edge portion. For example, Ca0, Cb0, Cc0, which are initial values, are set. By thus setting in advance, even if the temperature of the edge portion of the dispersion plate 234 decreases in this process, the temperature distribution of the dispersion plate 234 can be made uniform.

[0144] (Subsequent batch processing transfer process S124)

[0145] Next, the subsequent batch processing transfer process S124 will be described. After the second temperature adjustment process S122 ends, or after it is determined in the determination S110, S118 that temperature adjustment is not necessary, the process moves to the subsequent batch processing transfer process S124.

[0146] Here, the substrate processing apparatus 100 is controlled based on the setting of the subsequent batch processing setting process S108. For example, the substrate S of the subsequent batch is carried into the substrate processing apparatus 100.

[0147] Thus, before the first substrate S(l) of the subsequent batch is carried in, the processing of the substrate S can be made uniform by approximating the processing temperature to that of the last substrate S(m) of the previously processed batch.

[0148] In particular, since the temperature of the center portion of the distribution plate 234 is controlled to be higher than that of the edge portion in the first temperature adjustment process S120, the edge portion does not become excessively high, and the distribution plate 234 can be uniformly heated. Further, since the edge portion of the distribution plate 234 is heated to be higher than the center portion in the second temperature adjustment process S122, the in-plane variation of the substrate S in the film processing process S102 can be eliminated, and thus the batch-to-batch variation can also be eliminated.

[0149] Next, as one of the semiconductor manufacturing processes, the substrate processing apparatus 100 configured as described above is used for a process of forming a thin film on the substrate S, and Figure 10 This process is a process of processing one substrate in the nth batch processing process S102. That is, in the nth batch processing process S102, the film processing process is repeated for the number of substrates to be processed in the batch.

[0150] Here, an example in which a silicon nitride (SiN) film as a semiconductor thin film is formed on the substrate S by alternately supplying dichlorosilane (SiH2Cl2, abbreviated as DCS) gas as a first element-containing gas (first processing gas) and ammonia (NH3) gas as a second element-containing gas (second processing gas) is described.

[0151] (Substrate carrying-in and placing process)

[0152] The substrate placing table 212 is lowered to a carrying position (carrying position) of the substrate S, and the lift pins 207 are made to pass through the through holes 214 of the substrate placing table 212. As a result, the lift pins 207 become in a state of protruding by a predetermined height amount compared to the surface of the substrate placing table 212. In parallel with these actions, the atmosphere of the carrying space 206 is exhausted to become the same pressure as the adjacent vacuum carrying chamber (not shown) or a lower pressure than the pressure of the adjacent vacuum carrying chamber.

[0153] Next, the gate valve 149 is opened, and the carrying space 206 is made to communicate with the adjacent vacuum carrying chamber. Then, the substrate S is carried from the vacuum carrying chamber to the carrying space 206 using a vacuum carrying robot (not shown).

[0154] (Substrate processing position moving process)

[0155] After a predetermined time elapses, the substrate placing table 212 is raised to place the substrate S on the substrate placing surface 211, and further, as shown in FIG. 2B, it is raised until the substrate processing position. Figure 1

[0156] (First processing gas supply process S202)

[0157] ​After the substrate stage 212 is moved to the substrate processing position, the atmosphere is exhausted from the processing chamber 201 via the exhaust pipe 262, so that the pressure in the processing chamber 201 is adjusted.

[0158] After the adjustment to the prescribed pressure and the temperature of the substrate S reaches the prescribed temperature, for example, 500 to 6000C, the first processing gas is supplied from the common gas supply pipe 242 to the processing chamber. At this time, the atmosphere is exhausted via the exhaust pipe 262. The supplied DCS gas forms a silicon-containing layer on the substrate S.

[0159] At this time, in succession to the second temperature adjustment process S122, the temperature of the lower region of the center of the diffuser plate 234 is controlled to be higher than the temperature of the edge portion of the diffuser plate 234, that is, to be higher than the temperature corresponding to the substrate processing.

[0160] (Purge process: S204)

[0161] After the supply of the first processing gas is stopped, the non-active gas is supplied from the third gas supply pipe 245a, and the purge of the processing space 205 is performed. Thereby, the first processing gas that has not been combined to the substrate S in the first processing gas supply process S202 is removed from the processing space 205 via the exhaust pipe 262.

[0162] In the purge process S204, in order to remove the first processing gas remaining in the substrate S, the processing space 205, and the buffer space 232, a large amount of purge gas is supplied, so that the exhaust efficiency is improved.

[0163] (Second processing gas supply process: S206)

[0164] After the purge of the buffer space 232 and the processing space 205 is completed, next, the second processing gas supply process S206 is performed. In the second processing gas supply process S206, the valve 244d is opened, and the supply of the second processing gas into the processing space 205 is started via the remote plasma unit 244e and the shower head 230. At this time, the MFC 244c is adjusted so that the flow rate of the second processing gas becomes a prescribed flow rate. The supply flow rate of the second processing gas is, for example, 1000 to 10000 seem. In addition, even in the second processing gas supply process S206, the valve 245d of the third gas supply system is in the open state, and the non-active gas is supplied from the third gas supply pipe 245a. Thereby, the second processing gas is prevented from intruding into the third gas supply system.

[0165] The second processing gas which becomes a plasma state by the remote plasma unit 244e is supplied into the processing space 205 via the shower head 230. The supplied second processing gas reacts with the silicon-containing layer on the substrate S. Also, the already-formed silicon-containing layer is modified by the plasma of the second processing gas. Thereby, for example, a silicon nitride layer (SiN layer) is formed on the substrate S.

[0166] After a prescribed time elapses from the start of the supply of the second processing gas, the valve 244d is closed, and the supply of the second processing gas is stopped. The supply time of the second processing gas is, for example, 2 to 20 seconds.

[0167] (Purge process: S208)

[0168] After the supply of the second processing gas is stopped, the same purge process S208 as the above-described purge process S204 is executed. The operation of each part in the purge process S208 is the same as that of the above-described purge process S204, and thus the description thereof is omitted.

[0169] (Determination process: S210)

[0170] The above-described first processing gas supply process S202, purge process S204, second processing gas supply process S206, and purge process S208 are taken as one cycle, and the controller 400 determines whether the cycle is implemented for a prescribed number of times (n cycles). If the cycle is implemented for the prescribed number of times, a SiN layer having a desired film thickness is formed on the substrate S.

[0171] (Substrate carrying-out process)

[0172] After the layer having the desired film thickness is formed, the substrate stage 212 is lowered, and the substrate S is moved to the carrying position. After the movement to the carrying position, the substrate S is carried out from the carrying space 206.

[0173] As described above, according to the present embodiment, even if there is a maintenance process, the substrate temperature in the substrate plane and between batches can be adjusted, and thus a process without deviation can be performed.

[0174] [Second Embodiment]

[0175] Next, the second embodiment will be described. In the second embodiment, the maintenance process S110 and the temperature adjustment process S120 are different from those of the first embodiment. Hereinafter, the description will be given focusing on the differences, and the description of the same configuration as the first embodiment will be omitted.

[0176] Next, the temperature adjustment process S120 of the present embodiment will be described.

[0177] Since the electrode 251 is metal, the heat absorption rate is high, and thus it is considered that the temperature is locally lowered. At this time, the temperature of the shower head heater 271 in the region below the electrode 251 is controlled to be higher. For example, in the first temperature measurement process S104, the temperature of the intermediate portion 271b disposed below the electrode 251 is controlled in such a manner as to compensate for the portion in which the temperature is lowered due to the electrode 251. For example, the shower head heater 271 is controlled in such a manner that the temperature of the region below the electrode 251 is higher than that of other regions. Figure 1 , Figure 3 For example, in the first temperature measurement process S104, the temperature of the intermediate portion 271b disposed below the electrode 251 is controlled in such a manner as to compensate for the portion in which the temperature is lowered due to the electrode 251. For example, the shower head heater 271 is controlled in such a manner that the temperature of the region below the electrode 251 is higher than that of other regions.

[0178] As described above, according to the present embodiment, even if there is a maintenance process, the substrate temperature within the substrate surface and between batches can be adjusted, and thus processing without deviation can be performed.

[0179] [Other Embodiments]

[0180] The above-described embodiments are described in detail, but are not limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof.

[0181] For example, in the above-described embodiments, the temperature of the shower head is detected using the temperature detection portion 2821b and the temperature measurement portion 2823b in the first temperature measurement process S104 and the second temperature measurement process S114, but is not limited thereto, and a plurality of temperature detection portions 2821 and temperature measurement portions 2823 can be used. At this time, since the temperature distribution of the dispersion plate 234 can be more reliably detected, the temperature distribution of the dispersion plate 234 can be more reliably made uniform.

[0182] For example, in the above-described embodiments, in the film formation processing performed by the substrate processing apparatus, the DCS gas is used as the first element-containing gas (first processing gas), the NH3 gas is used as the second element-containing gas (second processing gas), and a case in which a SiN film is formed on the substrate S by alternately supplying them is exemplified, but is not limited thereto. That is, the processing gas used in the film formation processing is not limited to the DCS gas, the NH3 gas, or the like, and other kinds of gases can be used to form other kinds of thin films. Furthermore, even in a case in which three or more kinds of processing gases are used, as long as they are alternately supplied to perform the film formation processing, the embodiments can be used. Specifically, as the first element, it can not be Si, but various elements such as Ti, Zr, Hf, or the like. In addition, as the second element, it can not be N, but for example, Ar or the like.

[0183] In addition, for example, in each of the above-described modes, as the processing performed by the substrate processing apparatus, film formation processing is exemplified, but the present mode is not limited thereto. That is, the film formation processing exemplified by each of the modes can also be applied to film formation processing other than the film formation processing exemplified by each of the modes. In addition, regardless of the specific content of the substrate processing, not only can it be applied to film formation processing, but it can also be applied to cases where other substrate processing such as annealing processing, diffusion processing, oxidation processing, nitridation processing, photolithography processing, and the like is performed. Furthermore, it can also be applied to other substrate processing apparatuses, such as an annealing processing apparatus, an etching apparatus, an oxidation processing apparatus, a nitridation processing apparatus, an exposure apparatus, a coating apparatus, a drying apparatus, a heating apparatus, a processing apparatus utilizing plasma, and the like. In addition, these apparatuses can be mixed. In addition, a part of the configuration of one mode can be replaced with the configuration of another mode, and in addition, the configuration of one mode can be added with the configuration of another mode. In addition, to a part of the configuration of each of the modes, addition, deletion, and replacement of other configurations can be performed.

[0184] Hereinafter, ideal modes of the present application will be described.

[0185] (Note 1)

[0186] A method of manufacturing a semiconductor device, including the steps of:

[0187] A carrying-in step of carrying a substrate into a processing chamber;

[0188] A film processing step of supplying a gas to the substrate in the processing chamber through a dispersion plate provided in the processing chamber while heating the dispersion plate provided in a shower head provided upstream of the processing chamber with a shower head heater, and exhausting the gas from the processing chamber;

[0189] A carrying-out step of carrying the substrate out of the processing chamber;

[0190] A temperature measurement step of measuring the temperature of the shower head before carrying in the substrate to be processed next; and

[0191] A temperature adjustment step of comparing the temperature of the shower head after the temperature measurement step with temperature information set in advance, and controlling the shower head heater provided in the shower head so as to approach the temperature set in advance in a manner such that the temperature of an edge portion of the dispersion plate in the film processing step is higher than the temperature of the edge portion in the temperature adjustment step when the difference between the temperature of the shower head and the temperature set in advance is greater than a predetermined value.

[0192] (Note 2) The method of manufacturing a semiconductor device according to Note 1, in which the shower head heater heats the edge portion of the dispersion plate in the film processing step to a temperature higher than the temperature of the edge portion in the temperature adjustment step.

[0193] (Paragraph 3) The method for manufacturing a semiconductor device according to any one of Paragraphs 1 to 2, wherein the shower head heater heats the center of the diffuser plate in the film processing step at a lower temperature than the edge portion of the diffuser plate in the film processing step.

[0194] (Paragraph 4) The method for manufacturing a semiconductor device according to any one of Paragraphs 1 to 3, wherein the shower head heater heats the edge portion of the diffuser plate at a higher temperature than the center in the film processing step.

[0195] (Paragraph 5) The method for manufacturing a semiconductor device according to any one of Paragraphs 1 to 4, wherein the shower head heater heats the center of the diffuser plate at a higher temperature than the edge portion in the temperature adjustment step.

[0196] (Paragraph 6) The method for manufacturing a semiconductor device according to any one of Paragraphs 1 to 5, wherein the shower head has an electrode disposed above the diffuser plate,

[0197] the shower head heater is controlled to have a higher temperature in the lower region of the electrode than in other regions in the film processing step.

[0198] (Paragraph 7) The method for manufacturing a semiconductor device according to any one of Paragraphs 1 to 6, wherein the substrate processed in the film processing step is an nth batch of substrates, and the substrate processed next is an (n+1)th batch of substrates.

[0199] (Paragraph 8) The method for manufacturing a semiconductor device according to any one of Paragraphs 1 to 7, wherein a maintenance step is performed between the substrate processed in the film processing step and the substrate processed next.

[0200] (Paragraph 9) A substrate processing apparatus comprising: a processing chamber that processes a substrate; a shower head disposed upstream of the processing chamber; a diffuser plate included in the shower head; a shower head heater that heats the diffuser plate; a gas supply portion that supplies a gas to the substrate in the processing chamber via the diffuser plate; an exhaust portion that exhausts the gas from the processing chamber; a temperature measurement portion that measures the temperature of the shower head; and a control portion that controls the shower head heater to be activated to approach a predetermined temperature when the temperature of the shower head is greater than the predetermined temperature by a predetermined value or more before the substrate to be processed next is carried in.

[0201] (Addendum 11) A program for causing a substrate processing apparatus to execute the steps of: a step of carrying a substrate into a processing chamber; a film processing step of supplying a gas to the substrate in the processing chamber through a dispersing plate provided in a shower head while heating the dispersing plate with a shower head heater provided in the shower head, and exhausting the gas from the processing chamber; a step of carrying the substrate out of the processing chamber; a step of measuring the temperature of the shower head before carrying in the next substrate to be processed; and a step of comparing the temperature of the shower head with preset temperature information after the step of measuring the temperature, and controlling the shower head heater provided in the shower head so as to approach the preset temperature when the difference between the temperature of the shower head and the preset temperature is greater than a predetermined value.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of: a substrate carrying-in step of carrying a substrate into a processing chamber and placing the substrate on a substrate placing table; a film processing step of, after the substrate carrying-in step, heating the substrate with a substrate placing table heater provided on the substrate placing table while heating a dispersion plate provided in a shower head with a shower head heater provided in the shower head in such a manner that a heating temperature of a region in which an electrode is provided above the shower head heater is higher than a heating temperature of other regions of the shower head heater, and supplying a gas to the substrate in the processing chamber through the dispersion plate and exhausting the gas from the processing chamber, the electrode being capable of generating plasma in the processing chamber and having a higher thermal conductivity than the dispersion plate, the shower head heater being configured to have a shorter distance between the shower head heater and the dispersion plate at an edge portion of the dispersion plate than a distance between the shower head heater and the dispersion plate at a center portion of the dispersion plate; a substrate carrying-out step of, after the film processing step, lowering the substrate placing table to move to a substrate carrying position and carrying the substrate out of the processing chamber; a temperature measuring step of, after the substrate carrying-out step, measuring a temperature of the shower head before carrying-in of a next substrate to be processed, while maintaining the substrate placing table at the substrate carrying position; and a temperature adjusting step of, after the temperature measuring step, comparing the temperature of the shower head with preset temperature information, and controlling the shower head heater provided in the shower head to operate so as to approach the preset temperature in a case where a difference between the temperature of the shower head and the preset temperature is larger than a predetermined value, so that the shower head heater heats the center portion of the dispersion plate higher than the edge portion. The shower head heater heats the edge portion of the dispersion plate in the film processing step higher than the temperature of the edge portion in the temperature adjusting step. In the film processing step, the substrate is placed on a substrate placing portion provided below the shower head, and exhaust is performed from an outer periphery of the substrate placing portion. The shower head heater heats the center portion of the dispersion plate in the film processing step lower than the temperature of the edge portion of the dispersion plate in the film processing step. In the film processing step, the substrate is placed on a substrate placing portion provided below the shower head, and exhaust is performed from an outer periphery of the substrate placing portion. A maintenance step is performed between the substrate processed in the film processing step and the next substrate to be processed. The substrate processed in the film processing step is an nth batch of substrates, and the next substrate to be processed is an (n+1)th batch of substrates.

2. The method for manufacturing a semiconductor device according to claim 1, wherein The temperature adjusting step is performed after the maintenance step.

3. The method for manufacturing a semiconductor device according to Claim 2, wherein The temperature of the shower head in the maintenance step is processed lower than the temperature in the film processing step.

4. The method for manufacturing a semiconductor device according to Claim 1, wherein ​ 5. The method for manufacturing a semiconductor device according to Claim 4, wherein ​ 6. The method for manufacturing a semiconductor device according to Claim 1, wherein ​ 7. The method for manufacturing a semiconductor device according to Claim 6, wherein ​ 8. The method for manufacturing a semiconductor device according to Claim 6, wherein ​ 9. The method for manufacturing a semiconductor device according to Claim 6, wherein ​ 10. The method of manufacturing a semiconductor device according to Claim 6, wherein The preset temperature is a temperature in the film processing step before the maintenance step is performed.

11. A substrate processing apparatus comprising: a processing chamber that processes a substrate; a substrate stage on which the substrate is placed; a showerhead provided upstream of the processing chamber and capable of heating a diffusion plate; the diffusion plate provided in the showerhead; an electrode provided above the showerhead heater and capable of generating plasma in the processing chamber and having a higher thermal conductivity than the diffusion plate; a gas supply section that supplies a gas to the substrate in the processing chamber via the diffusion plate; an exhaust section that exhausts the gas from the processing chamber; a temperature measurement section that measures the temperature of the showerhead; and a control section configured to control the substrate stage, the showerhead heater, the gas supply section, the exhaust section, and the temperature measurement section in such a manner that the following processes are performed: a process of carrying a substrate into the processing chamber and placing the substrate on the substrate stage; a film processing step performed after the carrying process, in which the substrate is heated by a substrate stage heater provided on the substrate stage while the substrate stage is moved to a substrate processing position by being raised, and in which the diffusion plate is heated by the showerhead heater in such a manner that the heating temperature of a region in which the electrode is provided above the showerhead heater is higher than the heating temperature of other regions of the showerhead heater, and in which a gas is supplied to the substrate in the processing chamber via the diffusion plate and is exhausted from the processing chamber, the showerhead heater being configured such that the distance between the showerhead heater and the diffusion plate is shorter at the edge portion of the diffusion plate than at the center portion of the diffusion plate; a process performed after the film processing step, in which the substrate is carried out of the processing chamber by lowering the substrate stage to a substrate carrying position; a temperature measurement step performed after the carrying process, in which the temperature of the showerhead is measured before the next substrate to be processed is carried in, while the substrate stage is maintained at the substrate carrying position; after the temperature measurement step, the temperature of the showerhead is compared with preset temperature information, and in the case where the difference between the temperature of the showerhead and the preset temperature is greater than a predetermined value, the showerhead heater provided in the showerhead is controlled to operate so as to approach the preset temperature, so that the showerhead heater heats the diffusion plate in such a manner that the temperature of the center of the diffusion plate is higher than the temperature of the edge portion.

12. A recording medium recording a program for causing a substrate processing apparatus to execute the following steps by using a computer: a step of carrying a substrate into a processing chamber and placing the substrate on a substrate stage; ​ a film processing step, after the carrying-in step, in a state where the substrate stage is raised to move to a substrate processing position, the substrate is heated by a substrate stage heater provided to the substrate stage, while a shower head provided with a dispersion plate provided upstream of the processing chamber is heated by a shower head heater in a manner such that a heating temperature of a region of the shower head heater where an electrode is provided above is higher than a heating temperature of other regions of the shower head heater, the electrode being capable of generating plasma in the processing chamber and having a higher thermal conductivity than a thermal conductivity of the dispersion plate, and a gas is supplied to the substrate in the processing chamber via the dispersion plate, and the gas is exhausted from the processing chamber; after the film processing step, the substrate stage is lowered to move to a substrate carrying position, and the substrate is carried out of the processing chamber; after the carrying-out step, in a state where the substrate stage is maintained at the substrate carrying position, a temperature of the shower head is measured before carrying-in of the substrate to be processed next; and after the temperature measuring step, the temperature of the shower head is compared with temperature information set in advance, and in a case where a difference between the temperature of the shower head and the temperature set in advance is larger than a prescribed value, the shower head heater provided to the shower head is controlled to operate so as to approach the temperature set in advance, so that the shower head heater heats in a manner such that a temperature of a center of the dispersion plate is higher than a temperature of an edge portion.

13. A substrate processing method having the following steps: a carrying-in step of carrying a substrate into a processing chamber and placing the substrate on a substrate stage; a film processing step, after the carrying-in step, in a state where the substrate stage is raised to move to a substrate processing position, the substrate is heated by a substrate stage heater provided to the substrate stage, while a shower head provided with a dispersion plate provided upstream of the processing chamber is heated by a shower head heater in a manner such that a heating temperature of a region of the shower head heater where an electrode is provided above is higher than a heating temperature of other regions of the shower head heater, the electrode being capable of generating plasma in the processing chamber and having a higher thermal conductivity than a thermal conductivity of the dispersion plate, and a gas is supplied to the substrate in the processing chamber via the dispersion plate, and the gas is exhausted from the processing chamber; a carrying-out step, after the film processing step, the substrate stage is lowered to move to a substrate carrying position, and the substrate is carried out of the processing chamber; a carrying-out step, after the carrying-in step, in a state where the substrate stage is maintained at the substrate carrying position, a temperature of the shower head is measured before carrying-in of the substrate to be processed next; and after the temperature measuring step, the temperature of the shower head is compared with temperature information set in advance, and in a case where a difference between the temperature of the shower head and the temperature set in advance is larger than a prescribed value, the shower head heater provided to the shower head is controlled to operate so as to approach the temperature set in advance, so that the shower head heater heats in a manner such that a temperature of a center of the dispersion plate is higher than a temperature of an edge portion. a temperature measuring step of measuring the temperature of the cluster head in a state where the substrate stage is maintained at the substrate transfer position after the carrying-out step before carrying-in of the substrate to be processed next; and a temperature adjusting step of comparing the temperature of the cluster head with preset temperature information after the temperature measuring step, and in a case where the difference between the temperature of the cluster head and the preset temperature is larger than a prescribed value, controlling the cluster head heater provided to the cluster head so as to approach the preset temperature by operating the cluster head heater so as to heat the cluster head heater in a manner that the temperature of the center of the dispersion plate is higher than that of the edge portion.

Images