Heat dissipation structure

Abstract

The present application provides a heat dissipation structure. The heat dissipation structure includes a seed layer and a metal layer, the metal layer includes a plurality of metal portions arranged on the seed layer and separated from each other. The heat dissipation structure further includes a heat dissipation layer arranged on the seed layer and continuously covering the plurality of metal portions and the gaps between two adjacent metal portions. The present application aims at at least accelerating the heat dissipation rate of the packaging structure, thereby solving the stress or warping problem caused by heat accumulation.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically, to a heat dissipation structure, a packaging structure including the heat dissipation structure, and a method for forming the same. Background Technology

[0002] The trend towards smaller, thinner, and lighter electronic products has led to an increasing demand for higher density of internal circuitry (input / output I / O lines) in related packages. As the number of I / O lines in electronic components increases, most package structures achieve this by reducing the size of the conductors. Consequently, this increases resistance (due to reduced cross-sectional area), generating more heat. Therefore, the design of thermal management mechanisms within the package structure has become increasingly important.

[0003] Vias, typically used in fine-line circuits, are prone to thermal stress problems due to heat accumulation. When thermal stress occurs, it can easily lead to warpage and shear stress problems, especially between dissimilar materials. Figure 1 This is a schematic diagram illustrating defects caused by heat accumulation in existing packaging structures. For example... Figure 1 As shown, this can result in defects such as delamination12 and / or cold solder joints14 between the heterogeneous materials surrounding the via structure, leading to problems like open circuits or short circuits, and even severe deformation or warping within the package structure15. The smaller the via diameter, the more pronounced the impact of this problem. The higher the temperature within the package structure and / or the more complex the structure (e.g., high-density I / O packaged components), the more pronounced the problem. Currently, most packaged products are still plagued by this issue, especially due to differences in wafer-level and / or panel-level fabrication technologies. Summary of the Invention

[0004] To address the aforementioned problems in related technologies, this invention proposes a heat dissipation structure and a method for forming it, which can accelerate the heat dissipation rate of the package structure, thereby solving the stress or warping problems caused by heat accumulation.

[0005] An embodiment of the present invention provides a heat dissipation structure, comprising: a seed layer; a metal layer including a plurality of mutually separated metal portions disposed on the seed layer; and a heat dissipation layer disposed on the seed layer and continuously covering the plurality of metal portions and the gap between two adjacent metal portions.

[0006] In some embodiments, the metal layer and the heat dissipation layer are arranged in a zigzag pattern.

[0007] In some embodiments, the teeth of the metal layer and the teeth of the heat dissipation layer are in physical contact with the seed layer.

[0008] In some embodiments, a heat dissipation structure is disposed above a through-hole in the packaging structure, a seed layer is conformally disposed on the side and bottom surfaces of the through-hole, and a heat dissipation layer extends into the through-hole.

[0009] In some embodiments, the serrated interactive portion is at least within the through-hole.

[0010] In some embodiments, a pad is provided above the through hole, and a heat dissipation layer extending into the through hole forms a recess, with the pad conformally disposed on the side and bottom surfaces of the recess.

[0011] In some embodiments, the heat dissipation layer has a first side and a second side disposed opposite to the first side. The first side is provided with traces of the encapsulation structure, and the heat dissipation layer and the metal layer are disposed in a serrated pattern on the second side.

[0012] In some embodiments, the heat dissipation layer extends continuously across the via to below the trace.

[0013] In some embodiments, the heat dissipation layer has a first side and a second side opposite to the first side, a metal layer is disposed on the first side, and a conductive element is disposed on the second side, the conductive element being located above the serrated interlocking position.

[0014] In some embodiments, the heat dissipation layer is made of graphene.

[0015] Embodiments of the present invention also provide an encapsulation structure, including: a first seed layer; a first metal layer disposed on the first seed layer; a first heat dissipation layer, wherein the first metal layer and the first heat dissipation layer are alternately disposed in a sawtooth structure; a columnar component facing the sawtooth structure, wherein the columnar component is connected to the first heat dissipation layer through a conductive element; and a conductive element covering a portion of the columnar component.

[0016] In some embodiments, the columnar component includes a stacked second seed layer, a second metal layer, and a second heat dissipation layer; the conductive element is a solder ball with a recess, the second seed layer is disposed in the recess, the second metal layer is disposed on the second seed layer, and the second heat dissipation layer is located on the second metal layer.

[0017] In some embodiments, the second seed layer has a bottom wall and two opposing sidewalls connected together by the bottom wall, and the second metal layer and the second heat dissipation layer are sequentially and conformally stacked on the bottom wall and the two opposing sidewalls of the second seed layer.

[0018] In some embodiments, starting from the conductive element and moving upwards, the columnar component sequentially includes a third metal layer, a second seed layer, a second metal layer, a second heat dissipation layer, and a fourth metal layer.

[0019] In some embodiments, the packaging structure has heat dissipation vias, and the serrated interactive portion is located within the heat dissipation vias.

[0020] In some embodiments, a chip is disposed below the heat dissipation hole, and the chip is thermally connected to the sawtooth structure.

[0021] In some embodiments, a trace is also provided on the first heat dissipation layer, and another columnar component is inserted into a solder ball above the trace.

[0022] In some embodiments, an adhesive layer is provided between the columnar component and the first heat dissipation layer, and the conductive particles in the adhesive layer constitute conductive elements.

[0023] Embodiments of the present invention also provide a method for forming a package structure, comprising: forming a first seed layer in a heat dissipation via; forming a plurality of mutually separated metal portions on the first seed layer; and forming a first heat dissipation layer on the first seed layer to continuously cover the plurality of metal portions and the gap between two adjacent metal portions.

[0024] In some embodiments, a first seed layer is conventionally formed in the heat dissipation via, wherein a plurality of metal portions are formed on the bottom and side surfaces of the heat dissipation via, and the first heat dissipation layer extends into the heat dissipation via.

[0025] In some embodiments, the method of forming the package structure further includes: forming a conductive element over a first heat dissipation layer; and returning the conductive element to connect the conductive element to a columnar component of a heat sink, wherein the conductive element surrounds at least a portion of the columnar component. The columnar component includes a second seed layer, a second metal layer, and a second heat dissipation layer sequentially stacked in the direction toward the heat sink. Attached Figure Description

[0026] The various aspects of the invention will be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, according to standard industrial practice, the components are not drawn to scale. In fact, the dimensions of the components may be arbitrarily increased or decreased for clarity of discussion.

[0027] Figure 1 This is a schematic diagram of defects caused by heat accumulation in existing packaging structures.

[0028] Figure 2 This is a schematic diagram of a partial package structure with a heat dissipation structure according to an embodiment of the present invention.

[0029] Figure 3A This is a side view of the packaging structure according to an embodiment of the present invention.

[0030] Figure 3B yes Figure 3A A magnified view of a portion of the image.

[0031] Figure 3C This is a top view of the packaging structure according to an embodiment of the present invention.

[0032] Figure 4A This is a side view of the packaging structure according to an embodiment of the present invention.

[0033] Figure 4B yes Figure 4A A magnified view of a portion of the image.

[0034] Figures 5A to 5F This is a schematic diagram of a heat dissipation structure according to some embodiments of the present invention.

[0035] Figures 6A to 6C This is a schematic diagram of a columnar component according to some embodiments of the present invention.

[0036] Figures 7A to 7F This is a top view of the columnar component according to an embodiment of the present invention.

[0037] Figure 8 This is a schematic diagram of a packaging structure with a metal substrate according to an embodiment of the present invention.

[0038] Figure 9 This is a schematic diagram of a packaging structure according to another embodiment of the present invention.

[0039] Figure 10 This is a schematic diagram of a packaging structure according to another embodiment of the present invention.

[0040] Figures 11 to 36 This is a schematic diagram illustrating the various stages of forming a packaging structure according to an embodiment of the present invention. Specific Implementation

[0041] The following disclosure provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of elements and arrangements will be described below to simplify the invention. These are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component above or on a second component can include embodiments where the first and second components are in direct contact, or embodiments where an additional component is formed between the first and second components such that the first and second components are not in direct contact. Furthermore, reference numerals and / or letters may be repeated throughout the various instances. Such repetition is for brevity and clarity only and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0042] Heat accumulation can lead to warpage or stress problems. The materials within a package structure consist of dielectric and metallic materials, and their coefficients of thermal expansion (CTE) differ. For example, Cu (copper) has a CTE of 17 ppm / K, PA (polyamide) and PI (polyimide) have CTEs in the range of 60 ppm / K to 80 ppm / K, molding compounds have CTEs in the range of 30 ppm / K to 50 ppm / K, and Si (silicon) has CTEs in the range of 4 ppm / K to 6 ppm / K. It is evident that the difference in CTE between dielectric and metallic materials is quite significant. Therefore, the higher the temperature and / or the more complex the package structure (e.g., high-density I / O packages), the more pronounced the warpage or stress problems become. This problem arises because the heat dissipation structure and the bonding forces between dissimilar material interfaces are insufficient to overcome the generated thermal stress. Controlling the formation of stress or warpage depends on the ability to effectively dissipate accumulated heat to the outside through the dielectric.

[0043] According to an embodiment of the present invention, a heat dissipation structure is provided. Figure 2 This is a schematic diagram of a partial package structure with a heat dissipation structure according to an embodiment of the present invention. In this specification, the same elements are referred to by the same reference numerals in the various figures.

[0044] like Figure 2 As shown, the heat dissipation structure 200 may include a first seed layer 201, a first metal layer 202 located on the first seed layer 201, and a first heat dissipation layer 205 located on the first metal layer 202. The material of the first seed layer 201 may be Ti (titanium), Ni (nickel), or W (tungsten) and their alloys. The first metal layer 202 may include a plurality of mutually separated metal portions 203 disposed on the first seed layer. The material of the plurality of metal portions 203 may be, for example, Cu, Al (aluminum), Ag (silver), Au (gold), and their alloys. Gaps are formed between the plurality of mutually separated metal portions 203. The first heat dissipation layer 205 continuously covers the plurality of metal portions 203 and covers the gaps between two adjacent metal portions 203.

[0045] To achieve heat dissipation and reduce thermal stress, the strength (e.g., Young's coefficient) of the material in the first heat dissipation layer 205 is higher than that of the conductive material in the conductor circuit. For example, it is higher than the strength of Cu (128 GPa), Au (79 GPa), or Ag (83 GPa). For example, the material of the first heat dissipation layer 205 can be 10 times or more stronger than the conductive material in the conductor circuit. The thermal conductivity of the material in the first heat dissipation layer 205 is also higher than that of the conductive material in the conductor circuit. For example, it is higher than the thermal conductivity of Cu (401 W / mK), Au (318 W / mK), or Ag (429 W / mK). For example, the material of the first heat dissipation layer 205 can be 10 times or more stronger than the conductive material in the conductor circuit. This reduces problems such as thermal extrusion deformation and thermal fatigue failure caused by heat accumulation.

[0046] Furthermore, the CTE of the material of the first heat dissipation layer 205 can be lower than that of the conductive material in the conductor circuit. For example, it can be lower than the CTE of conductive materials such as Cu (16ppm / K to 19ppm / K), Au (13ppm / K to 15ppm / K), Ag (18ppm / K to 20ppm / K), Nickel (18ppm / K to 20ppm / K), Ti (7ppm / K to 9ppm / K), and Pt (10ppm / K to 12ppm / K). The CTE of the material of the first heat dissipation layer 205 can also be negative. This avoids problems such as thermal expansion and compression-induced thermal cracking and microcracks.

[0047] The resistivity of the material in the first heat dissipation layer 205 is lower than that of the conductive material in the conductor circuit. For example, it is lower than the resistivity of the conductive material Cu by 1.7 x 10⁻⁶. -8 The resistivity of Au is 2.2 x 10⁻⁶ Ω·m. -8 The resistivity of Ω·m, or Ag, is 1.5 x 10⁻⁶. -8 Ω·m. In this way, the electrical signal can be avoided from being affected by it, resulting in drawbacks such as attenuation and sluggishness.

[0048] In some embodiments, the material of the first heat dissipation layer 205 can be any suitable material with higher strength than the conductive material of the conductor circuit, higher thermal conductivity than the conductive material, lower CTE than the conductive material, and lower resistivity than the conductive material. In some embodiments, the thickness of the first heat dissipation layer 205 is... Within the range. In other embodiments, the thickness of the first heat dissipation layer 205 may also be configured in other appropriate ways.

[0049] The thermal conductivity of general conductive materials is insufficient for use in IC packages with fine lines and through-holes; for example, the thermal conductivity of Cu is... Within a certain range. The interfacial bonding strength between organic materials and conductive materials is generally low; for example, the tensile strength between a molding compound and Cu is within a certain range. Within this range. Furthermore, thermal (expansion) stress between materials with different CTEs can lead to delamination; for example, the CTE of Cu is in the range of 16 ppm / K to 19 ppm / K. This can easily cause severe warping deformation due to accumulated heat. The heat dissipation structure 200 reduces thermal deformation by providing a first heat dissipation layer 205 with a high thermal conductivity. By ensuring that the heat dissipation rate in the packaging structure is greater than the resulting heat accumulation, problems caused by heat accumulation such as warping can be avoided.

[0050] In some embodiments, the first heat dissipation layer 205 can be made of graphene. Graphene has a strength of 1100 GPa, a thermal conductivity of 5300 W / mK, a CTE of -5 ppm / K to -8 ppm / K, and a resistivity of 10⁻⁸ Ω·m. In some embodiments, the thickness of the graphene is... Within a certain range. Graphene has excellent thermal diffusion properties, thus improving the heat dissipation rate and alleviating heat accumulation problems. Furthermore, graphene also has a good conductive wiring surface, which can enhance the electrical skin effect.

[0051] like Figure 2 As shown, the plurality of metal portions 203 of the first metal layer 202 are formed as a plurality of serrated teeth 203, which are also referred to as teeth 203 below. Furthermore, the first heat dissipation layer 205 has a plurality of downwardly protruding teeth 207. The plurality of teeth 207 of the first heat dissipation layer 205 are alternately disposed with the plurality of metal portions 203 of the first metal layer 202 such that the first metal layer 202 and the first heat dissipation layer 205 are formed in a serrated alternating arrangement. Figure 2 As shown, the teeth 203 of the first metal layer 202 and the teeth 207 of the first heat dissipation layer 205 are in physical contact with the first seed layer 201, that is, in direct contact.

[0052] In some embodiments, the heat dissipation structure 200 may be positioned above a through-hole 302 (also referred to as a heat dissipation via) in the packaging structure. The through-hole 302 is formed in the dielectric layer 304. In this embodiment, a first seed layer 201 is conformally disposed on the side and bottom surfaces of the through-hole 302, thereby extending the first heat dissipation layer 201 into the through-hole 302. The first seed layer 201 extends to the upper surface of the dielectric layer 304, and the bottom surface of the first seed layer 201 is lower than the upper surface of the dielectric layer 304. In some embodiments, the diameter of the through-hole 302 may be... Within a certain range. The thickness of the dielectric layer 304 can be... Within the range. In some embodiments, the material of dielectric layer 304 can be an organic material, such as any one of PA, PI, epoxy resin, and PBO (polyphenylene benzoazole). In some embodiments, the material of dielectric layer 304 can be an inorganic material, such as any one of Si, glass, ceramic, and oxide, wherein the oxide can be, for example, SiO. x SiN x TaO x In some embodiments, the thickness of the first seed layer 201 can be [missing information]. Within the range.

[0053] The portion of the first heat dissipation layer 205 and the first metal layer 202 that intersects in a sawtooth pattern is located at least within the through hole 302, such as Figure 2 As shown, the teeth 207 of the first heat dissipation layer 205 and the teeth 203 of the first metal layer 202 are disposed at the bottom and above the sidewall of the through hole 302. In addition, the teeth 207 of the first heat dissipation layer 205 and the teeth 203 of the first metal layer 202 are also disposed on the upper surface of the dielectric layer 304.

[0054] A toothed portion 203 of a metal layer 202 covered by a first heat dissipation layer 205 is provided on the bottom surface of the through-hole 302, thus forming a larger heat transfer contact area and adhesive contact area, accelerating the heat conduction rate and bonding force at the through-hole. The serrated alternation between the first heat dissipation layer 205 and the first metal layer 202 provides a high bonding force between the dielectric layer 304 and the first heat dissipation layer 205; for example, the bonding force between the dielectric layer 304 and the first heat dissipation layer 205 can reach... The bonding force is within a certain range, which is higher than the bonding force between the dielectric layer and the metal material (Cu, Al, Ag, Au).

[0055] A pad 306 is disposed above the through-hole 302, and a first metal layer 202 and a first heat dissipation layer 205 are located between the pad 306 and the first seed layer 201. The first heat dissipation layer 205 extending into the through-hole 302 has a recess, and the pad 306 is conformally disposed on the side and bottom surfaces of the recess. The first seed layer 201, the first metal layer 202, the first heat dissipation layer 205, and the pad 306 are sequentially stacked above the bottom surface and sidewall of the through-hole 302. The material of the pad 306 can be, for example, Cu. In some embodiments, the thickness of the pad 306 can be [missing information]. Within the range.

[0056] The first heat dissipation layer 205 has a first side 311 and a second side 312 opposite to the first side 311. A first metal layer 202 is disposed on the first side 311 of the first heat dissipation layer 205, and a conductive element 308 is disposed on the second side 312 of the first heat dissipation layer 205, that is, the conductive element 308 and the first metal layer 202 are disposed on opposite sides of the first heat dissipation layer 205. A serrated pattern is provided below the conductive element 308 between the first metal layer 202 and the first heat dissipation layer 205. The conductive element 308 can be, for example, a solder ball. The diameter of the solder ball can be... Within the range. The material of conductive element 308 can be, for example, Sn (tin). The first heat dissipation layer 205 can have a faster thermal conductivity than conductive element 308.

[0057] Figure 3A This is a side view of the packaging structure according to an embodiment of the present invention. Figure 3B yes Figure 3A A magnified view of a portion of the image. Figure 3C This is a top view schematic diagram of the packaging structure according to an embodiment of the present invention. Figure 3A yes Figure 3C The side view at line AA in the diagram. Combined with... Figures 3A to 3C As shown, the packaging structure may include a first seed layer 201 as described above, a first metal layer 202 located on the first seed layer 201, and a first heat dissipation layer 205 covering the first metal layer 202.

[0058] A trace 309 of an encapsulation structure is provided on the second side 312 of the first heat dissipation layer 205. The first heat dissipation layer 205 and the first metal layer 202 are arranged in a sawtooth pattern on the first side 311 of the first heat dissipation layer 205. Furthermore, the sawtooth pattern of the first heat dissipation layer 205 and the first metal layer 202 is also provided below the trace 309. The teeth 203 of the metal layer 202 covered by the first heat dissipation layer 205 are provided below the trace 309, thus forming a larger heat transfer contact area and an adhesive contact area, accelerating the heat conduction rate and adhesion at the trace 309.

[0059] The first heat dissipation layer 205 extends across the via 302 and continues continuously below the trace 309. The via is formed in the dielectric layer 304. The trace 309 is located above the surface of the dielectric layer 304.

[0060] In some embodiments, the thickness of trace 309 can be Within the specified range. The material of trace 309 can be any one of Cu, Ag, Ni, and Au. The width L of trace 309 can be less than 20 μm, and the spacing S of trace 309 can be less than 20 μm. A conductive element 308 may also be disposed above trace 309.

[0061] It should be understood that, depending on the heat dissipation requirements, the heat dissipation structure 200, including the first seed layer 201, the first metal layer 202, and the first heat dissipation layer 205, can also be disposed at other locations besides the through hole 302 and the trace 309.

[0062] Figure 4A This is a side view of the packaging structure according to an embodiment of the present invention. Figure 4B yes Figure 4A A magnified view of a portion of the image. (See attached image.) Figure 4A and Figure 4B As shown, the encapsulation structure may further include a columnar member 400 disposed on the surface of the heat sink 403. The columnar member 400 faces the serrated structure formed by the first metal layer 202 and the first heat sink layer 205, and is connected to the first heat sink layer 205 via a conductive element 308. The conductive element 308 covers a portion of the columnar member 400. As shown, the conductive element 308 may cover the lower part of the columnar member 400. A molding compound 404 covers the surface of the dielectric layer 304 and surrounds the columnar member 400. The heat sink 403 is formed on top of the molding compound 404, and the molding compound 404 fills the opening 409 in the heat sink 403. Furthermore, the columnar member 400 is inserted into the conductive element 308 above the trace 309.

[0063] The columnar component 400 may include a stacked second seed layer 401, a second metal layer 402, and a second heat dissipation layer 405. The second seed layer 401 may be made of Ti, Ni, or W, or alloys thereof. The second metal layer 402 may be made of, for example, Cu, Al, Ag, Au, or alloys thereof. The second heat dissipation layer 405 may be made of graphene. In other embodiments, the second seed layer 401, the second metal layer 402, and the second heat dissipation layer 405 may also be made of other suitable materials.

[0064] The conductive element 308 can be a solder ball with a recessed portion. A second seed layer 401 is disposed in the recessed portion, a second metal layer 402 is located on the second seed layer, and a second heat dissipation layer 405 is located on the second metal layer. Specifically, the second seed layer 401 has a bottom wall and two opposing side walls connected together by the bottom wall. The second metal layer 402 and the second heat dissipation layer 405 are sequentially and conformally stacked on the bottom wall and the two opposing side walls of the second seed layer 401.

[0065] The columnar component 400 also includes a third metal layer 407 located below the second seed layer 401 and a fourth metal layer 408 located on the second heat dissipation layer. Thus, starting from the conductive element 308 upwards, the columnar component 400 sequentially includes a third metal layer 407, a second seed layer 401, a second metal layer 402, a second heat dissipation layer 405, and a fourth metal layer 408. The sidewalls of the third metal layer 407 surround the sidewalls of the second seed layer 401, and the second seed layer 401, the second metal layer 402, and the second heat dissipation layer 405 are also located on the sidewalls of the third metal layer 407. The fourth metal layer 408 fills the spaces between the sidewalls of the second heat dissipation layer 405 and is connected to the heat sink 403.

[0066] A chip 502 is disposed below the through-hole 302. In some embodiments, the chip 502 may be a flip chip. A thermally conductive connection is established between the chip 502 and the serrated structure of the heat dissipation structure 200. For example, a thermally conductive connection is implemented by attaching the chip 502 to the adhesive layer 504 below the first seed layer 201. The material of the adhesive layer 504 may be, for example, any one of adhesive, PI, and epoxy resin. In some embodiments, a third heat dissipation layer (not shown) may be disposed above the heat sink 403. In some embodiments, the material of the third heat dissipation layer may be graphene. In one embodiment, the third heat dissipation layer may be located directly on the heat sink 403 and cover the surface of the heat sink 403 and the opening 409 in the heat sink 403. In one embodiment, the third heat dissipation layer is located directly on the heat sink 403, exposing the opening 409 in the heat sink 403. In one embodiment, a molding compound 404 may be disposed between the third heat dissipation layer and the heat sink 403.

[0067] Figures 5A to 5F This is a schematic diagram of a heat dissipation structure according to some embodiments of the present invention. For example... Figure 5A As shown, the lengths of the first seed layer 201 and the first heat dissipation layer 205 of the heat dissipation structure 200 formed in the through-hole are greater than the length of the pad 306; the sidewalls of the first seed layer 201 and the first heat dissipation layer 205 are vertically aligned, the sidewall of the pad 306 is located on the first heat dissipation layer 205, and the length of the pad 306 is less than the length of the metal layer 202. Figure 5B As shown, the length of the first seed layer 201 of the heat dissipation structure 200 formed in the through-hole is greater than the length of the first heat dissipation layer 205 and the pad 306; the sidewalls of the first heat dissipation layer 205 and the pad 306 are vertically aligned and the sidewalls of the first heat dissipation layer 205 and the pad 306 are located on the first seed layer 201. Figure 5C As shown, the sidewalls of the first seed layer 201 and the first heat dissipation layer 205 are vertically aligned, the sidewall of the pad 306 is located on the first heat dissipation layer 205, and the length of the pad 306 is greater than the length of the metal layer 202.

[0068] like Figure 5D As shown, the sidewalls of the first seed layer 201 and the first heat dissipation layer 205 of the heat dissipation structure 200 formed below the trace 309 are vertically aligned. The sidewall of the trace 309 is located on the first heat dissipation layer 205. The length of the trace 309 is less than the length of the metal layer 202, and a portion of the metal portion 203 in the metal layer 202 is exposed below the trace. Figure 5E As shown, trace 309 covers multiple metal portions 203 of metal layer 202. A first heat dissipation layer 205 covers metal layer 202 to form a protrusion 206, and the sidewall of trace 309 is perpendicularly aligned with the sidewall of the protrusion 206. Figure 5F As shown, trace 309 covers multiple metal portions 203 of metal layer 202. Trace 309 covers the sidewall of the protrusion 206 of the first heat dissipation layer 205.

[0069] Figures 6A to 6C This is a side view of the columnar component according to an embodiment of the present invention. Figures 7A to 7F This is a top view of the columnar component according to an embodiment of the present invention. Figure 6A As shown, the sidewall of the fourth metal layer 408 of the columnar component 400 is formed into a tapered shape that gradually narrows in the direction from the second heat dissipation layer 405 to the second seed layer 401. Figure 6B As shown, the sidewalls of the fourth metal layer 408 of the columnar component 400 extend in the vertical direction. (As...) Figure 6C As shown, the sidewalls of the fourth metal layer 408 of the columnar component 400 are inclined sidewalls and are connected to the top surface in the horizontal direction. Figure 7A As shown, the columnar component can be quadrilateral in shape, such as a trapezoid or an irregular quadrilateral. For example... Figure 7B As shown, the shape of the columnar component can be triangular. For example... Figure 7C As shown, the columnar component can be square in shape. For example... Figure 7D As shown, the columnar component can be circular in shape. For example... Figure 7E As shown, the columnar component can be rectangular in shape. For example... Figure 7F As shown, the shape of the columnar component can be irregular.

[0070] Figure 8 This is a schematic diagram of a packaging structure with a metal substrate according to an embodiment of the present invention. Figure 8As shown, the heat dissipation structure 200 described above can also be used in the package structure 800 with a metal substrate. The heat dissipation structure 200 can be disposed between the conductive element 808 and the chip 802. The metal substrate includes a dielectric layer 804 and a lead frame 810 located in the dielectric layer 804. The material of the dielectric layer 804 can be an organic material, such as any one of PA, PI, epoxy resin, and PBO. In some embodiments, the material of the dielectric layer 804 can be an inorganic material, such as any one of Si, glass, ceramic, and oxide, wherein the oxide can be, for example, SiO. x SiN x TaO x The material of the lead frame 810 can be, for example, any one of Cu, Ag, Au, or Ni.

[0071] Figure 9 This is a schematic diagram of a packaging structure according to another embodiment of the present invention, wherein interconnection is implemented using bonding leads 902. The bonding leads are connected between the heat sink 403 and the trace 309. Figure 9 Other aspects of the illustrated embodiments and Figure 2 Similarly, this will not be elaborated upon here.

[0072] Figure 10 This is a schematic diagram of a packaging structure according to another embodiment of the present invention. Figure 10 As shown, an adhesive layer 702 is disposed between the columnar component 400 and the first heat dissipation layer. The adhesive layer 702 can be anisotropic conductive film (ACF) or anisotropic conductive adhesive. The conductive particles 705 located between the columnar component 400 and the pad 306 or trace 309 in the adhesive layer 702 can become conductive due to extrusion, thereby forming a conductive element between the columnar component 400 and the pad 306 or trace 309.

[0073] Figures 11 to 36 This is a schematic diagram illustrating the various stages of forming a packaging structure according to an embodiment of the present invention. The following is in conjunction with... Figures 11 to 36 The method for forming the encapsulation structure of the present invention will be described below.

[0074] like Figure 11As shown, a carrier substrate 1002 and a foam layer 1004 covering the carrier substrate 1002 are first provided. In some embodiments, the carrier substrate 1002 may be an organic substrate, such as a BT resin substrate, a polypropylene (PP) substrate, or an Ajinomoto extender film (ABF) substrate. In some embodiments, the carrier substrate 1002 may be an inorganic substrate, such as a glass substrate, a silicon substrate, a ceramic substrate, or a metal substrate. The carrier substrate may be a square, circular, or other shaped substrate.

[0075] Then as Figure 12 As shown, a photoresist layer 1006 covering the pad layer 1004 is formed above the pad layer 1004. An exposure process is performed on the photoresist layer. The photoresist is developed to form openings 1005 in the photoresist layer, as shown. Figure 13 As shown. An etching process is performed using a photoresist layer 1006 with openings 1005 to pattern the pad layer 1004 beneath the photoresist layer. The photoresist layer 1006 is then removed, as... Figure 14 As shown, a patterned pad layer 1004 is formed. Furthermore, a seed layer 1008 is covered on the patterned pad layer 1004.

[0076] Finally, as Figure 15 As shown, a photoresist layer 1110 is coated on the seed layer 1008. Furthermore, exposure and development processes are performed on the photoresist layer 1110 to form openings 1112 within it, as shown... Figure 16 As shown. A metal layer 1116 is deposited in the opening 1112 of the photoresist 1110. After forming the metal layer 1116, the photoresist layer 1110 is removed. Figure 17 As shown, chip 1120 is bonded to metal layer 1116 via pads and bumps.

[0077] Subsequently, as Figure 18 As shown, the solder undergoes heat treatment to reflow the bump metal. (As indicated) Figure 19 As shown, a dielectric layer 1122 is formed, which covers a patterned pad layer 1004, a metal layer 1116, and a chip 1120. Heat dissipation vias 1125 are formed in the dielectric layer 1122, such as... Figure 20 As shown, multiple heat dissipation vias 1125 are formed, for example, by a drilling process. The multiple heat dissipation vias 1125 penetrate the dielectric layer 1122, exposing the metal layer 1116 and the adhesive layer 1126 on the chip 1120, respectively. Furthermore, a first seed layer 201 of the heat dissipation structure 200 is formed on the dielectric layer 1122 and within the heat dissipation vias 1125. The first seed layer 201 is conformally formed within the heat dissipation vias 1125.

[0078] A photoresist layer 1130 is formed on the first seed layer 201, and the photoresist layer 1130 fills a plurality of heat dissipation vias 1125, such as Figure 21 As shown. An exposure and development process is performed on the photoresist layer 1130 to form an opening 1132 in the photoresist layer 1130. A metal material, such as..., is deposited in the opening 1132. Figure 22 As shown, a plurality of metal portions 203 form the first metal layer 202 of the heat dissipation structure 200. The plurality of metal portions 203 are formed on the bottom and side surfaces of the heat dissipation via 1125, and the first heat dissipation layer 205 extends into the heat dissipation via 1125. In some embodiments, in a top view, the plurality of mutually separated metal portions 203 formed above the heat dissipation via 1125 are arranged in a circular layout. In a top view, the plurality of mutually separated metal portions 203 to be formed below the trace are arranged in a circular layout.

[0079] Then, as Figure 23 As shown, a first heat dissipation layer 205 is formed on the first seed layer 201 and on the plurality of metal portions 203. The first heat dissipation layer 205 continuously covers the plurality of metal portions 203 and the gaps between adjacent metal portions 203. A photoresist layer 1140 is formed on the first heat dissipation layer 205, as shown. Figure 24 As shown. Exposure and development processes are performed on the photoresist layer 1140 to form openings 1142 in the photoresist layer 1140, as... Figure 25 As shown. An etching process is performed using a photoresist layer 1140 with openings 1142 to pattern the first heat dissipation layer 205 beneath the photoresist layer. The photoresist layer 1140 is then removed, as... Figure 26 As shown.

[0080] Subsequently, as Figure 27 As shown, a photoresist layer 1148 is formed on a patterned first heat dissipation layer 205. Exposure and development processes are performed on the photoresist layer 1148 to form openings 1149 within it. Figure 28 As shown, the formed opening 1149 exposes the heat dissipation via 1125 above the chip 1120. Metal material is plated into the opening 1149 to form pads 306 and traces 309. As... Figure 29 As shown, solder is plated in the opening 1149 to form a conductive element 308, and then the photoresist layer 1148 is removed to obtain the desired result. Figure 30 The structure shown. (As illustrated) Figure 31 As shown, the return conductive element 308 connects the conductive element 308 to the columnar member 400 of the heat sink 403, and the conductive element 308 surrounds at least a portion of the columnar member 400. Figure 32 As shown, a molding compound 404 is formed below the heat sink 403, and the molding compound 404 fills the opening 409 of the heat sink 403.

[0081] like Figure 33 As shown, remove the carrier substrate. Figure 34 As shown, the structure after removing the carrier substrate 1002 is inverted. Then, an etching process, such as a dry etching process, is performed to remove part of the dielectric layer 1122, exposing the pad layer 1004. Figure 35 As shown, solder balls 1123 are placed on the exposed gasket layer 1004. Figure 36 As shown, the final packaging structure 1120 is obtained by performing the segmentation process.

[0082] The foregoing summary outlines features of several embodiments that enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that other processes and structures can be readily designed or modified based on this invention to achieve the same objectives and / or benefits as the embodiments described herein. Those skilled in the art should also recognize that these equivalent structures do not depart from the spirit and scope of the invention, and that various changes, substitutions, and modifications can be made without departing from the spirit and scope of the invention.

Claims

1. A heat dissipation structure, characterized in that, include: Seed layer; The metal layer includes a plurality of mutually separated metal portions disposed on the seed layer; A heat dissipation layer is disposed on the seed layer and continuously covers the plurality of metal parts and the gap between two adjacent metal parts, wherein the thermal conductivity of the heat dissipation layer is at least 10 times higher than that of gold, and a conductive element is located above the seed layer and protrudes from the side of the heat dissipation layer opposite to the seed layer.

2. The heat dissipation structure according to claim 1, characterized in that, The metal layer and the heat dissipation layer are arranged in a sawtooth pattern.

3. The heat dissipation structure according to claim 2, characterized in that, The teeth of the metal layer and the teeth of the heat dissipation layer are in physical contact with the seed layer.

4. The heat dissipation structure according to claim 2, characterized in that, The heat dissipation structure is disposed above the through hole of the packaging structure, the seed layer is conformally disposed on the side and bottom surface of the through hole, and the heat dissipation layer extends into the through hole.

5. The heat dissipation structure according to claim 4, characterized in that, The serrated, interlocking portion is at least within the through-hole.

6. The heat dissipation structure according to claim 5, characterized in that, A pad is provided above the through hole, and the heat dissipation layer extends into the through hole to form a recess. The pad is conformally disposed on the side and bottom surfaces of the recess.

7. The heat dissipation structure according to claim 5, characterized in that, The heat dissipation layer has a first side and a second side disposed opposite to the first side, and traces of an encapsulation structure are provided on the first side. On the second side, the heat dissipation layer and the metal layer are arranged in a sawtooth pattern.

8. The heat dissipation structure according to claim 7, characterized in that, The heat dissipation layer extends continuously across the through-hole to below the trace.

9. The heat dissipation structure according to claim 2, characterized in that, The heat dissipation layer has a first side and a second side opposite to the first side, and the metal layer is disposed on the first side. The conductive element is located above the serrated interaction.

10. The heat dissipation structure according to claim 1, characterized in that, The heat dissipation layer is made of graphene.

Images