A temperature-controlled optocoupler

Abstract

The present invention relates to a temperature-controlled optocoupler comprising a light-emitting device, a photosensor, and a light-transmitting member disposed between the light-emitting device and the photosensor. The light-transmitting member comprises a silicon dioxide substrate and a vanadium dioxide sheet disposed on the silicon dioxide substrate. Compared to existing technologies, the present invention utilizes a silicon dioxide substrate that provides both support and insulation, thereby improving the operating stability of the optocoupler and broadening its application range.

Description

Technical Field

[0001] The present invention relates to an optical coupler, and in particular to a temperature-controlled optical coupler. Background Art

[0002] An optocoupler (also known as a photocoupler) is a device that uses light as a medium to transmit electrical signals. It typically uses an infrared light-emitting diode (LED) as the emitter and a photoresistor or other photosensitive semiconductor as the receiver, packaged together in the same housing. When an electrical signal is applied to the emitter, the emitter emits light, and the receiver receives the light, generating a photocurrent that flows out of the output terminal, thus achieving "electrical-optical-electrical" conversion. Optocouplers offer advantages such as small size, long life, contactlessness, strong anti-interference capabilities, isolation between input and output, and unidirectional signal transmission, making them widely used in digital circuits. Vanadium dioxide is a metal oxide with phase-change properties. The structural changes before and after the phase transition cause a reversible transition from transmission to reflection of infrared light. This property has led to its application in the development of intelligent temperature-control thin films. The phase transition point of vanadium dioxide is also adjustable. For example, the phase transition point of pure vanadium dioxide is 68°C, but adding germanium can raise it to 100°C.

[0003] Based on this, Chinese patent CN103217754A discloses a thermosensitive optical coupler whose thermosensitive material may include vanadium dioxide and / or titanium-doped vanadium dioxide. However, the vanadium dioxide in this thermosensitive optical coupler lacks support, resulting in poor stability and insulation performance, which limits its application. Summary of the Invention

[0004] The purpose of the present invention is to provide a temperature-controlled optocoupler. By designing a silicon dioxide substrate, it can provide support and insulation functions, thereby improving the working stability of the optocoupler and broadening the scope of use.

[0005] The purpose of the present invention can be achieved by the following technical solutions:

[0006] A temperature-controlled optical coupler comprises a light-emitting device, a photosensitive element, and a light-transmitting member arranged between the light-emitting device and the photosensitive element. The light-transmitting member comprises a silicon dioxide substrate and a vanadium dioxide sheet arranged on the silicon dioxide substrate.

[0007] Furthermore, the thickness of the silicon dioxide substrate is 400-2000 μm.

[0008] Furthermore, the thickness of the vanadium dioxide flakes is 10-200 μm.

[0009] Furthermore, the vanadium dioxide flakes are located in a silicon dioxide substrate.

[0010] Furthermore, the photosensitive element is a photosensitive semiconductor device.

[0011] Furthermore, the photosensitive element is a photodiode.

[0012] Furthermore, the photosensitive element is a photoresistor.

[0013] Furthermore, the light-emitting device is a light-emitting diode.

[0014] Furthermore, the cross-sectional area of the silicon dioxide substrate is consistent with the cross-sectional area of the inner cavity of the optical coupler housing.

[0015] Furthermore, the cross-sectional area of the vanadium dioxide sheet is consistent with the cross-sectional area of the silicon dioxide substrate.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] 1) By designing a silicon dioxide substrate, it can provide support and insulation, thereby improving the working stability of the optocoupler and broadening its scope of use.

[0018] 2) The thickness of the silicon dioxide substrate is 400-2000 μm, and the thickness of the vanadium dioxide flake is 10-200 μm, which can balance the transmittance and support effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a structural schematic diagram of the present invention;

[0020] Among them: 1. light-emitting device, 2. silicon dioxide substrate, 3. photosensitive element, 4. vanadium dioxide sheet. DETAILED DESCRIPTION

[0021] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments. This embodiment is implemented based on the technical solution of the present invention, and provides a detailed implementation method and specific operation process, but the protection scope of the present invention is not limited to the following embodiments.

[0022] A temperature-controlled optocoupler, as shown in the figure, includes a light-emitting device 1, a photosensitive element 3, and a light-transmitting member arranged between the light-emitting device 1 and the photosensitive element 3. The light-transmitting member includes a silicon dioxide substrate 2 and a vanadium dioxide sheet 4 arranged on the silicon dioxide substrate 2.

[0023] By designing the silicon dioxide substrate 2, it can provide support and insulation functions, thereby improving the working stability of the optical coupler and broadening the scope of use.

[0024] The thickness of the silicon dioxide substrate 2 is 400-2000 μm, and the thickness of the vanadium dioxide sheet 4 is 10-200 μm, which can balance the light transmittance and the supporting effect.

[0025] In other embodiments of the present application, the vanadium dioxide flakes 4 are located in the silicon dioxide substrate 2, which provides better support and insulation effects.

[0026] The photosensitive element 3 may be a photosensitive semiconductor device, such as a photodiode, or a photoresistor. The light emitting device 1 may be a light emitting diode.

[0027] In another embodiment of the present application, the cross-sectional area of the silicon dioxide substrate 2 is consistent with the cross-sectional area of the inner cavity of the optical coupler housing, and the cross-sectional area of the vanadium dioxide sheet 4 is consistent with the cross-sectional area of the silicon dioxide substrate 2 .

[0028] This application utilizes the temperature-controlled phase change characteristics of vanadium dioxide-based materials and applies them to optocoupler devices to achieve temperature-controlled optocoupler on and off. At the same time, if the optocoupler generates excessive heat during application, the phase change of the vanadium dioxide-based material can also be activated to achieve on and off, thereby avoiding more serious damage to the device.

[0029] Specifically, a high-transmittance silicon dioxide sheet is selected as the substrate, with a thickness of about 200-1000 μm. A layer of vanadium dioxide with a thickness of about 10-200 μm is deposited on it by magnetron sputtering or vapor deposition. A layer of high-transmittance silicon dioxide sheet with the same thickness as the substrate is then covered on top to form a "sandwich" structure. This structure is placed between the optical coupler light emitter and the light receiver. At room temperature, both vanadium dioxide and silicon dioxide have high transmittance for infrared light, allowing the infrared light emitted by the light emitter to pass through the "sandwich" structure and reach the light receiver. When the ambient temperature reaches the phase transition point of vanadium dioxide, the vanadium dioxide undergoes a phase change, causing the infrared light to change from transmission to reflection. That is, the infrared light generated by the light emitter cannot reach the light receiver, so the light receiver is turned off. When the ambient temperature drops below the phase transition point of vanadium dioxide, vanadium dioxide can again achieve infrared transmission, and the light receiver is turned on. The role of the silicon dioxide sheet is to provide support and insulation.

Claims

1. A temperature-controlled optical coupler comprising a light-emitting device (1), a photosensitive element (3), and a light-transmitting member disposed between the light-emitting device (1) and the photosensitive element (3), characterized in that: The light-transmitting member comprises a silicon dioxide substrate (2) and a vanadium dioxide thin sheet (4) disposed in the silicon dioxide substrate (2); The thickness of the silicon dioxide substrate (2) is 400-2000 μm; The thickness of the vanadium dioxide flakes (4) is 10-200 μm; The vanadium dioxide flakes (4) are located in the silicon dioxide substrate (2); The cross-sectional area of the silicon dioxide substrate (2) is consistent with the cross-sectional area of the inner cavity of the optical coupler housing; The cross-sectional area of the vanadium dioxide sheet (4) is consistent with the cross-sectional area of the silicon dioxide substrate (2); The vanadium dioxide thin slices (4) are deposited on the silicon dioxide substrate (2) by magnetron sputtering or vapor deposition.

2. A temperature-controlled optical coupler according to claim 1, characterized in that: The photosensitive element (3) is a photosensitive semiconductor device.

3. A temperature-controlled optical coupler according to claim 2, characterized in that: The photosensitive element (3) is a photosensitive diode.

4. The temperature-controlled optical coupler according to claim 1, wherein: The photosensitive element (3) is a photoresistor.

5. The temperature-controlled optical coupler according to claim 1, wherein: The light-emitting device (1) is a light-emitting diode.

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