In-situ chemical oxidation remediation system, method and application of organic contaminated soil

Abstract

The present invention belongs to the technical field of soil remediation, and discloses an in-situ chemical oxidation remediation system, method and application of organic contaminated soil. The in-situ chemical oxidation remediation system of organic contaminated soil is provided with an injection well located in the soil contaminated area, and a drainage well is surrounded by multiple injection wells and located in the center of the injection well; an injection well screen is installed inside the injection well, and a discharge plasma generator is fixed inside the injection well screen; the injection well screen is connected to an injection pump through a connecting pipeline, and a drainage pump is arranged at the bottom of the drainage well, and the injection pump and the drainage pump are respectively connected to a water storage tank through a connecting pipeline; the discharge plasma generator is connected to a gas supply system and a high-voltage power supply through a gas transmission pipeline and a high-voltage wire respectively. The present invention uses active species generated by a discharge plasma generator to repair organic contaminated soil, and has the advantages of low repair cost, short time, good effect, small disturbance to the environment, no secondary pollution, and can be applied to composite contaminated sites with different pollution volumes.

Description

Technical Field

[0001] The present invention belongs to the technical field of soil remediation, and in particular relates to an in-situ chemical oxidation remediation system, method and application of organic contaminated soil. Background Art

[0002] At present, with the acceleration of my country's urbanization process and the adjustment of industrial structure, some petroleum, chemical, coking and other enterprises have been closed and relocated due to serious pollution to the surrounding soil environment, resulting in a large number of polluted sites. When these polluted sites undergo functional conversion or secondary development and utilization, the high-risk organic pollutants in the soil seriously threaten human health and environmental safety. How to reduce or even remove organic pollutants in the soil has become a soil environmental problem that needs to be solved urgently.

[0003] The remediation of organic contaminated soil usually adopts two remediation operation modes: ex situ and in situ. Ex situ remediation requires the contaminated soil to be excavated and transported to a special place or device for treatment, so it is large in scale, expensive, and easy to destroy the structural properties of the soil; while in situ remediation is increasingly popular because it does not require large-scale excavation and transportation of soil, has a smaller scale of work, lower cost, and less disturbance to the environment.

[0004] Among the existing in-situ remediation technologies for organically contaminated soil, in-situ chemical oxidation is one of the most widely studied and applied soil remediation technologies. This technology involves injecting chemical oxidants into organically contaminated soil to cause organic pollutants to undergo oxidation reactions and be degraded or decomposed into other less toxic substances or completely mineralized into carbon dioxide and water. This technology has the advantages of a short remediation cycle, a wide range of applicable pollutant types, low remediation costs, and applicability to complex contaminated sites with different amounts of pollution. At present, there are two main types of chemical oxidants used in engineering, one is Fenton's reagent and the other is persulfate. Fenton's reagent can only generate hydroxyl radicals with strong oxidizing ability under acidic conditions (pH=3-5), so acid adjustment equipment is needed to adjust the pH to an appropriate range. As the Fenton reaction proceeds, Fenton's reagent must be continuously added, and the iron salts finally generated will cause secondary pollution to the soil. In addition, the heat generated by the Fenton reaction poses certain safety hazards, and protective facilities need to be added; the oxidizing ability of persulfate itself is limited, and only by activating it to generate strong oxidizing free radicals such as hydroxyl and sulfate radicals can it play a repair role, so equipment or materials for activating persulfate are needed. At present, the process equipment for activating persulfate is relatively complex and has low efficiency. The introduction of persulfate will increase sulfate ions in the soil or groundwater; due to the influence of reagent dosage and soil environmental factors, Fenton's reagent and persulfate cannot continuously and stably generate strong oxidizing free radicals, so the continuity of repair is poor and the difference in repair effect is large.

[0005] Through the above analysis, the problems and defects of the existing soil in-situ chemical oxidation remediation technology are as follows:

[0006] (1) The process equipment is complex and the conditions are demanding;

[0007] (2) The demand for oxidants is large, which will also cause secondary pollution;

[0008] (3) The continuity and stability of soil remediation are not strong.

[0009] The difficulty and significance of solving the above problems and defects are as follows: With the increasingly stringent standards for the remediation of organic contaminated soil, in order to achieve the remediation goals, the process equipment for the in-situ chemical oxidation remediation of organic contaminated soil by Fenton reagent and activated persulfate is becoming more and more complex, and the conditions are becoming more and more harsh; at the same time, the process of Fenton reaction and activated persulfate is affected by many factors. In the complex system of contaminated soil, it is difficult to control the reaction conditions of the device to continuously and stably produce strong oxidizing free radicals in the contaminated soil; in addition, there is currently no way to avoid the secondary pollution problems caused by Fenton reagent and persulfate. If the above problems and defects can be solved by a new in-situ chemical oxidation remediation system and method for organic contaminated soil, it will greatly promote the engineering application of soil in-situ remediation technology in organic contaminated sites. Summary of the invention

[0010] In view of the problems existing in the prior art, the present invention provides an in-situ chemical oxidation remediation system, method and application of organic contaminated soil.

[0011] The present invention is implemented as follows: an in-situ chemical oxidation remediation system for organic contaminated soil is provided with: a water injection well and a drainage well;

[0012] The water injection wells are arranged in a plurality of locations in the soil contaminated area, and the distance between the water injection wells is determined according to the hydraulic conductivity coefficient of the contaminated soil area;

[0013] The drainage well is surrounded by a plurality of injection wells and is located in the center of the injection wells, and the depth of the drainage well is below the soil contamination depth to the impermeable layer.

[0014] The water injection well is provided with a water injection well screen pipe, and the length of the water injection well screen pipe is consistent with the depth of the water injection well.

[0015] Monitoring wells are set up outside the injection wells and in the upstream and downstream directions of the groundwater flow in the area where the contaminated site is located to monitor the impact of the remediation construction on the surrounding groundwater. If pollutants are found to spread to the groundwater, the monitoring wells will be used as drainage wells to treat the contaminated groundwater.

[0016] The injection well screen pipe is connected to an injection pump via a connecting pipeline, a drainage pump is arranged at the bottom of the drainage well, and the injection pump and the drainage pump are respectively connected to a water storage tank via connecting pipelines; the exhaust ports of the injection well and the water storage tank are connected to an exhaust gas processor via an air pipe.

[0017] A discharge plasma generator is fixed in the injection well screen pipe; the discharge plasma generator comprises a low-voltage electrode tube, an upper air chamber top cover, an upper chuck, a lower air chamber bottom cover, a lower chuck, an upper air chamber, a lower air chamber, an upper air chamber air inlet, a lower air chamber air outlet, an air guide pipe, an aeration plate, a high-pressure quartz medium tube, a conductive coating, an upper chuck air hole, a lower chuck air hole, a fixing flange, a water inlet and an air outlet;

[0018] An upper air chamber top cover and an upper chuck are fixed from top to bottom inside the upper end of the low-voltage electrode tube by threads;

[0019] A lower air chamber bottom cover and a lower chuck are fixed from bottom to top inside the lower end of the low-voltage electrode tube by threads;

[0020] An upper air chamber is sandwiched between the upper air chamber top cover and the upper chuck;

[0021] A lower air chamber is sandwiched between the lower air chamber bottom cover and the lower chuck;

[0022] The high-pressure quartz medium tube is clamped between the upper chuck and the lower chuck;

[0023] Furthermore, the upper chuck and the lower chuck are respectively provided with an upper chuck air hole and a lower chuck air hole, and the upper chuck air hole and the lower chuck air hole are connected with the gap between the low-voltage electrode tube and the high-voltage quartz medium tube; the upper air chamber top cover and the lower air chamber bottom cover are respectively provided with an upper air chamber air inlet and a lower air chamber air outlet;

[0024] Furthermore, the air inlet of the upper air chamber is connected to the air supply system through an air pipeline; and the air outlet of the lower air chamber is connected to the aeration plate through an air guide pipe.

[0025] The inner wall of the high-voltage quartz dielectric tube is coated with a conductive coating, and the conductive coating is connected to the high-voltage output end of the high-voltage power supply through a high-voltage wire.

[0026] The upper end of the low-voltage electrode tube is connected with a fixing flange, and the discharge plasma generator is fixed in the screen pipe of the water injection well through the fixing flange. A water inlet and an exhaust port are provided on the surface of the fixing flange.

[0027] Another object of the present invention is to provide an in-situ chemical oxidation remediation method for organic contaminated soil implementing the in-situ chemical oxidation remediation system for organic contaminated soil. The in-situ chemical oxidation remediation method for organic contaminated soil of the present invention comprises:

[0028] The gas supply system injects gas into the discharge plasma generator. The high voltage applied between the conductive coating of the discharge plasma generator and the low-voltage electrode tube ionizes the gas, generating a large number of electrons. The applied high voltage enables the electrons to gain energy and bombard other molecules or atoms, causing them to be excited or ionized, generating excited atoms, high-energy electrons and other active groups.

[0029] These excited atoms, high-energy electrons and other active radicals enter the injection well through the aeration disk of the discharge plasma generator, and undergo a series of elementary reactions with the water molecules and pollutant molecules in the injection well, generating a large number of active free radicals and molecules;

[0030] Excited atoms, high-energy electrons, and a large number of active free radicals and molecules pass through the contaminated soil area with water through the sieve holes of the injection well screen, react with organic pollutants in the soil, degrade them into low-toxic substances or completely mineralize them into carbon dioxide and water, and ultimately achieve the remediation of organic contaminated soil; the harmful exhaust gas generated during the remediation process is finally treated by the exhaust gas processor.

[0031] Another object of the present invention is to provide an application of the in-situ chemical oxidation remediation system and method for organic contaminated soil in the remediation of organic contaminated soil.

[0032] Combining all the above technical solutions, the positive effects and advantages of the present invention are as follows: the present invention utilizes excited atoms, high-energy electrons and a large number of active free radicals and molecules generated by the discharge plasma generator in the water injection well screen to degrade organic pollutants in soil and water to achieve in-situ soil remediation. The process equipment is simple, and only the high-voltage power supply and the gas supply system need to be adjusted to enable the discharge plasma generator to produce stable and continuous active species. Therefore, the continuity and stability of soil remediation are strong, and harmful tail gas is also harmlessly treated, without any secondary pollution problems. The present invention has the advantages of low remediation cost, short time, good effect, small disturbance to the environment, and can be applied to complex polluted sites with different pollution volumes. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a schematic diagram of the structure of an in-situ chemical oxidation remediation system for organic contaminated soil provided by an embodiment of the present invention.

[0034] Figure 2 It is a schematic diagram of the arrangement of injection wells, drainage wells and monitoring wells provided in an embodiment of the present invention.

[0035] Figure 3 This is an application example of the in-situ chemical oxidation remediation system and method for organic contaminated soil provided by the present invention in a volatile organic contaminated site.

[0036] Figure 4This is an application example of the in-situ chemical oxidation remediation system and method for organic contaminated soil provided by the present invention in a petroleum contaminated site.

[0037] In the figure: 1. injection well; 2. injection well screen; 3. drainage well; 4. monitoring well; 5. discharge plasma generator; 501. low-voltage electrode tube; 502. upper air chamber top cover; 503. upper chuck; 504. lower air chamber bottom cover; 505. lower chuck; 506. upper air chamber; 507. lower air chamber; 508. upper air chamber air inlet; 509. lower air chamber air outlet; 510. air guide tube; 511. aeration plate; 512. high-pressure quartz medium tube; 513. conductive coating; 514. upper chuck air hole; 515. lower chuck air hole; 516. fixing flange; 517. water inlet; 518. exhaust outlet; 6. air supply system; 7. high-voltage power supply; 8. water storage tank; 9. water injection pump; 10. drainage pump; 11. exhaust gas processor. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0039] like Figure 1 As shown, an in-situ chemical oxidation remediation system for organic contaminated soil provided by an embodiment of the present invention mainly comprises: an injection well 1, an injection well screen 2, a drainage well 3, a monitoring well 4, a discharge plasma generator 5, an air supply system 6, a high-voltage power supply 7, a water storage tank 8, an injection pump 9, a drainage pump 10 and an exhaust gas processor 11, wherein the arrangement of the injection well 1, the drainage well 3 and the monitoring well 4 is as shown in FIG. Figure 2 shown.

[0040] A plurality of water injection wells 1 are arranged in the soil contaminated area. The specifications and dimensions of each water injection well 1 are the same. The diameter of the water injection well 1 is 50 cm and the depth is 8 m. The center distance between two adjacent water injection wells 1 is about 3 m. The water injection well screen pipe 2 is installed in each water injection well 1 .

[0041] The injection well screen pipes 2 are all made of 316L stainless steel pipes, with an outer diameter of 50 cm, a length of 8 m, and a wall thickness of 0.5 cm. The pipe wall is distributed with sieve holes of uniform size, with a diameter of 1 cm and a center distance of 1.5 cm between two adjacent sieve holes.

[0042] The drainage well 3 is located in the center of the injection well 1. The diameter of the drainage well 3 is 75 cm and the depth is 12 m. Monitoring wells 4 are respectively arranged on the front and rear sides of the drainage well 3.

[0043] The monitoring well 4 has a diameter of 50 cm and a depth of 10 m. The center distance between the monitoring well 4 and the adjacent drainage well 3 is about 2 m.

[0044] The discharge plasma generator 5 is fixed in the water injection well screen pipe 2, and the discharge plasma generator 5 includes a low-voltage electrode tube 501, an upper air chamber top cover 502, an upper chuck 503, a lower air chamber bottom cover 504, a lower chuck 505, an upper air chamber 506, a lower air chamber 507, an upper air chamber air inlet 508, a lower air chamber air outlet 509, an air guide pipe 510, an aeration plate 511, a high-pressure quartz medium tube 512, a conductive coating 513, an upper chuck air hole 514, a lower chuck air hole 515, a fixing flange 516, a water inlet 517 and an exhaust port 518.

[0045] The low-voltage electrode tube 501 is a round tube made of 316L stainless steel, 120 cm long, 10 cm in inner diameter, and 0.5 cm thick. The inner walls of the upper and lower ends are respectively threaded with 15 cm long threads. The upper end is fixed with an upper air chamber top cover 502 and an upper chuck 503 made of insulating nylon by threads from top to bottom, and the lower end is fixed with a lower air chamber bottom cover 504 and a lower chuck 505 made of 316L stainless steel by threads from bottom to top; a 5 cm high upper air chamber 506 is sandwiched between the upper air chamber top cover 502 and the upper chuck 503; the lower air chamber bottom cover 504 is fixed with a lower chuck 505 made of 316L stainless steel by threads from bottom to top. A 5 cm high lower air chamber 507 is sandwiched between the upper air chamber top cover 502 and the lower air chamber bottom cover 504; a 1.5 cm upper air chamber air inlet 508 and a 2.5 cm lower air chamber air outlet 509 are respectively opened on the upper air chamber top cover 502 and the lower air chamber bottom cover 504; the upper air chamber air inlet 508 is connected to the air supply system 6 through an air pipeline; the lower air chamber air outlet 509 is connected to the hemispherical microporous titanium aeration plate 511 through a 6 m long, 0.2 cm thick, 2.5 cm outer diameter 316L stainless steel air guide pipe 510; the upper chuck 503 and the lower chuck 50 A high-voltage quartz medium tube 512 is sandwiched between the two ends. The high-voltage quartz medium tube 512 is a quartz glass round tube with a thick middle and thin ends, with a total length of 100 cm, an outer diameter of 6 cm at both ends, a wall thickness of 0.5 cm, and a length of 15 cm respectively. The outer diameter of the middle section is 9.6 cm, the wall thickness is 0.2 mm, and the length is 70 cm. The inner wall of the middle section is plated with a conductive coating 513 with a thickness of 0.3 cm and a length of 60 cm using graphite conductive glue; the conductive coating 513 is connected to the high-voltage output end of the high-voltage power supply 7 through a high-voltage wire through the upper chuck 503 and the upper air chamber top cover 502; the upper chuck The disk 503 and the lower chuck 505 are respectively provided with 8 0.8 cm upper chuck air holes 514 and 8 0.8 cm lower chuck air holes 515; the upper chuck air holes 514 and the lower chuck air holes 515 are connected to the gap between the low-voltage electrode tube 501 and the high-pressure quartz medium tube 512; the stainless steel fixing flange 516 is connected to the upper end outer wall of the low-voltage electrode tube 501, and is used to fix the discharge plasma generator 5 in the water injection well screen pipe, and the surface of the fixing flange 516 is provided with a 2.5 cm water inlet 517 and a 2.5 cm exhaust port 518.

[0046] The gas supply system 6 is connected to the upper air chamber air inlet 508 of the discharge plasma generator 5 through a transparent PVC air pipe to provide dry and stable air to the discharge plasma generator 5. The air pressure is adjustable at 0.05-2MPa and the gas flow rate is 5-20m 3 / h is adjustable and purchased from Guangdong Baode Technology Co., Ltd.

[0047] The high-voltage power supply 7 is connected to the conductive coating 513 of the discharge plasma generator 5 through a high-voltage wire, and is used to supply power to the discharge plasma generator 5. The output frequency of the high-voltage power supply is 6kHz, and the output voltage is adjustable from 0 to 20kV. It is purchased from Dalian Yijia Marine Technology Co., Ltd.

[0048] The water tank 8 is a plastic circular water tank with a capacity of 5 tons, which is used to store water required by the injection well and water discharged from the drainage well, and is provided with a water outlet, a water inlet and an exhaust port. The water outlet of the water tank 8 is connected to the injection well 1 through a 304 stainless steel water pipe via the injection pump 9 and the water inlet 517 on the fixed flange 516, the water inlet of the water tank 8 is connected to the drainage pump 10 installed at the bottom of the drainage well 3 through a 304 stainless steel water pipe, and the exhaust port of the water tank 8 is connected to the exhaust gas processor 11 through a transparent PVC air pipe.

[0049] The water injection pump 9 is a QY series stainless steel self-priming gas-liquid mixing pump with a flow rate of 1.5m 3 / h, purchased from Nanfang Pump Industry Co., Ltd.; drainage pump 10 is a WQ series submersible sewage pump with a head of 30m and a flow rate of 15m 3 / h, purchased from Shanghai People's Pump Industry Group Co., Ltd.

[0050] The exhaust gas processor 11 is used to treat harmful exhaust gas in the soil remediation process. It is also connected to the exhaust port 518 on the fixed flange 516 through a transparent PVC air pipe and was purchased from Beijing Shanmeishuimei Ozone High-tech Co., Ltd.

[0051] The steps of the in-situ chemical oxidation remediation method for organic contaminated soil provided by the embodiment of the present invention are:

[0052] First, after checking that the circuit, water circuit and gas circuit are connected correctly, open the gas supply system 6 and introduce 1.5m 3 / h of air, the gas pressure is maintained at 0.05±0.01MPa;

[0053] Second, start the water injection pump 9 to inject the water in the water storage tank 8 into the water injection well screen pipe 2, and maintain the water level in the water injection well screen pipe 2 at a distance of about 0.2m from the wellhead;

[0054] Third, start the high voltage power supply 7 and adjust the output voltage of the high voltage power supply 7 to 24±0.5 kV;

[0055] Fourth, when the water level in the drainage well 3 is greater than 2 m, the drainage pump 10 is started to drain the water in the drainage well 3 into the water storage tank 8;

[0056] Fifth, after the repair is completed, shut down the high voltage power supply 7 and the water injection pump 9, and after the water level in the water injection well screen pipe 2 is lower than the aeration disk 511 of the discharge plasma generator 5, shut down the air supply system 6, the tail gas processor 11 and the drainage pump 10.

[0057] The technical solution of the present invention is further described below in conjunction with specific experiments.

[0058] An investigation of a former chemical plant site revealed that it was contaminated by volatile organic compounds such as 1,1-dichloroethane, 1,2-dichloroethane, vinyl chloride, and 1,1-dichloroethylene. The concentrations of 1,1-dichloroethane, 1,2-dichloroethane, and vinyl chloride reached 84.4 mg / kg, 15.3 mg / kg, and 6.8 mg / kg, respectively, all of which were higher than the second-level standard value for soil environmental quality for industrial land. The in-situ chemical oxidation remediation system and method for organic contaminated soil provided by the present invention were used to conduct a remediation test on the above-mentioned contaminated site. After 24 hours of remediation, the concentrations of 1,1-dichloroethane, 1,2-dichloroethane, and vinyl chloride in the soil before and after remediation were analyzed, and the results were as follows: Figure 3 As shown. Figure 3 It can be seen that the concentrations of 1,1-dichloroethane, 1,2-dichloroethane and vinyl chloride in the soil dropped from 84.4 mg / kg, 15.3 mg / kg and 6.8 mg / kg before remediation to 20.5 mg / kg, 1.8 mg / kg and 0.2 mg / kg after remediation. During the remediation process, no 1,1-dichloroethane, 1,2-dichloroethane and vinyl chloride were detected in the monitoring well water. It can be seen that the in-situ chemical oxidation remediation system and method for organic contaminated soil provided by the present invention can meet the requirements of industrial land after remediation of volatile organic contaminated sites, and the groundwater is not polluted.

[0059] There is organic pollution around a certain oil collection site. After analysis, the total amount of petroleum hydrocarbons in the soil reached 625 mg / kg, which is 6.25 times the first-level standard value of soil organic pollutant environmental quality. The in-situ chemical oxidation remediation system and method for organic polluted soil provided by the present invention were used to conduct a remediation test on the above-mentioned polluted site. After 72 hours of remediation, the total amount of petroleum hydrocarbons in the soil and the monitoring well water before and after remediation were analyzed. The results are as follows: Figure 4 As shown. Figure 4It can be seen that after the in-situ chemical oxidation remediation system and method for organic contaminated soil provided by the present invention was used for remediation, the total amount of petroleum hydrocarbons in the soil was reduced from 625 mg / kg to 74 mg / kg; the total amount of petroleum hydrocarbons in the monitoring well water was reduced from 9.35 mg / L to 0.84 mg / L. Obviously, the in-situ chemical oxidation remediation system and method for organic contaminated soil provided by the present invention can effectively remediate petroleum contaminated soil, and also have a certain purification effect on groundwater.

[0060] In the description of the present invention, unless otherwise specified, "plurality" means two or more than two; the orientations or positional relationships indicated by the terms "upper", "lower", "inner", "outer", "upper end", "lower end", "from top to bottom", "from bottom to top", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0061] The above description is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Any modification, equivalent substitution and improvement made by any technician familiar with the technical field within the technical scope disclosed by the present invention and within the spirit and principle of the present invention should be covered by the protection scope of the present invention.

Claims

1. An in-situ chemical oxidation remediation system for organic contaminated soil, characterized in that: The in-situ chemical oxidation remediation system for organic contaminated soil is provided with: injection and drainage wells; The water injection wells are arranged in a plurality of locations in the soil contaminated area, and the distance between the water injection wells is determined according to the hydraulic conductivity coefficient of the contaminated soil area; The drainage well is surrounded by a plurality of injection wells and is located in the center of the injection wells, and the depth of the drainage well is below the soil contamination depth to the impermeable layer; The water injection well is provided with a water injection well screen pipe, and the length of the water injection well screen pipe is consistent with the depth of the water injection well; The injection well screen is connected to an injection pump via a connecting pipeline, a drainage pump is provided at the bottom of the drainage well, and the injection pump and the drainage pump are respectively connected to a water storage tank via connecting pipelines; the exhaust ports of the injection well and the water storage tank are connected to an exhaust gas processor via an air pipe; Monitoring wells are set up around the injection wells and in the upstream and downstream directions of the groundwater flow in the area where the contaminated site is located to monitor the impact of the remediation construction on the surrounding groundwater. If pollutants are found to spread to the groundwater, the monitoring wells will be used as drainage wells to treat the contaminated groundwater; A discharge plasma generator is fixed in the injection well screen pipe; the discharge plasma generator comprises a low-voltage electrode tube, an upper air chamber top cover, an upper chuck, a lower air chamber bottom cover, a lower chuck, an upper air chamber, a lower air chamber, an upper air chamber air inlet, a lower air chamber air outlet, an air guide pipe, an aeration plate, a high-pressure quartz medium tube, a conductive coating, an upper chuck air hole, a lower chuck air hole, a fixing flange, a water inlet and an air outlet; An upper air chamber top cover and an upper chuck are fixed from top to bottom by threads inside the upper end of the low-voltage electrode tube, and an upper air chamber is sandwiched between the upper air chamber top cover and the upper chuck; a lower air chamber bottom cover and a lower chuck are fixed from bottom to top by threads inside the lower end of the low-voltage electrode tube, and a lower air chamber is sandwiched between the lower air chamber bottom cover and the lower chuck; The high-pressure quartz medium tube is clamped between the upper chuck and the lower chuck; Furthermore, the upper chuck and the lower chuck are respectively provided with an upper chuck air hole and a lower chuck air hole, and the upper chuck air hole and the lower chuck air hole are connected with the gap between the low-voltage electrode tube and the high-voltage quartz medium tube; the upper air chamber top cover and the lower air chamber bottom cover are respectively provided with an upper air chamber air inlet and a lower air chamber air outlet; Furthermore, the air inlet of the upper air chamber is connected to the air supply system through an air pipeline; the air outlet of the lower air chamber is connected to the aeration plate through an air guide pipe; The inner wall of the high-voltage quartz dielectric tube is coated with a conductive coating, and the conductive coating is connected to the high-voltage output end of the high-voltage power supply through a high-voltage wire; The upper end of the low-voltage electrode tube is connected with a fixing flange, and the discharge plasma generator is fixed in the screen pipe of the water injection well through the fixing flange. A water inlet and an exhaust port are provided on the surface of the fixing flange.

2. An in-situ chemical oxidation remediation method for organic contaminated soil using the in-situ chemical oxidation remediation system for organic contaminated soil as claimed in claim 1, characterized in that: The in-situ chemical oxidation remediation method for organically contaminated soil comprises: The gas supply system injects gas into the discharge plasma generator. The high voltage applied between the conductive coating of the discharge plasma generator and the low-voltage electrode tube ionizes the gas, generating a large number of electrons. The applied high voltage enables the electrons to gain energy and bombard other molecules or atoms, causing them to be excited or ionized, generating excited atoms, high-energy electrons and other active groups. These excited atoms, high-energy electrons and other active radicals enter the injection well through the aeration disk of the discharge plasma generator, and undergo a series of elementary reactions with the water molecules and pollutant molecules in the injection well, generating a large number of active free radicals and molecules; Excited atoms, high-energy electrons, and a large number of active free radicals and molecules pass through the contaminated soil area with water through the sieve holes of the injection well screen, react with organic pollutants in the soil, degrade them into low-toxic substances or completely mineralize them into carbon dioxide and water, and ultimately achieve the remediation of organic contaminated soil; the harmful exhaust gas generated during the remediation process is finally treated by the exhaust gas processor.

3. An application of the in-situ chemical oxidation remediation method for organic contaminated soil as claimed in claim 2 in the remediation of organic contaminated soil.

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