Tray and metal organic chemical vapor deposition reactor thereof

Abstract

A tray and a metal organic chemical vapor deposition reactor, wherein the tray can rotate along its central axis, has a first tray surface and a second tray surface arranged at the periphery of the first tray surface, the second tray surface is higher than the first tray surface, a substrate groove recessed in the first tray surface is arranged in the first tray surface, a plurality of support platforms are arranged in each of the substrate grooves, and the support platforms are used to support the processed substrate. The metal organic chemical vapor deposition reactor can prevent flying chips and improve the consistency of wavelength and temperature, and can meet the requirements of the display.

Description

Technical Field

[0001] The invention relates to the field of semiconductors, and in particular to a tray and a metal organic chemical vapor deposition reactor thereof. Background Art

[0002] The metal-organic chemical vapor deposition (MOCVD) reactor includes a reaction chamber, a tray and a gas shower head, wherein the tray is located at the bottom of the reaction chamber and can rotate along its rotation axis, the tray includes a plurality of substrate slots, each of which is used to carry a substrate to be processed, and the gas shower head is used to transport reaction gas into the reaction chamber, and the reaction gas is used to form an epitaxial layer on the surface of the substrate to be processed. At present, the epitaxial layers prepared by the metal-organic chemical vapor deposition reactor include: compounds of group III elements and group V elements (such as GaN, InN, AlN, InGaN, AlGaN, GaP, etc.).

[0003] However, the performance of epitaxial layers produced by using existing metal organic chemical vapor deposition reactors is poor and is difficult to meet the performance requirements of displays. Summary of the invention

[0004] The technical problem solved by the present invention is to provide a tray and a metal organic chemical vapor deposition reactor thereof, so as to prevent the substrate to be processed from flying out, and also to improve the consistency of airflow and temperature, so as to meet the performance requirements of the display.

[0005] In order to solve the above technical problems, the present invention provides a tray, including: the tray can be rotated along its central axis, has a first tray surface and a second tray surface arranged on the periphery of the first tray surface, the second tray surface is higher than the first tray surface, and the first tray surface is provided with a substrate groove recessed in the first tray surface, and a plurality of support platforms are arranged in each of the substrate grooves, and the support platforms are used to support the substrates to be processed.

[0006] Optionally, the height difference between the second tray surface and the first tray surface is 50 microns to 130 microns.

[0007] Optionally, the height difference between the upper surface of the support table and the first tray surface is such that when the substrate to be processed is placed on the support table, there is a first distance between the upper surface of the substrate to be processed and the corresponding upper surface of the support table, and there is a second distance between the first tray surface and the corresponding upper surface of the support table, and the difference between the first distance and the second distance is: -80 microns to 80 microns.

[0008] Optionally, the difference between the first distance and the second distance is: -50 microns to 50 microns.

[0009] Optionally, the first distance is equal to the second distance.

[0010] Optionally, the intersection of the central axis and the tray is the rotation center of the tray, the substrate slot includes a distal end and a proximal end, the distance from the distal end to the rotation center is greater than the distance from the proximal end to the rotation center; the substrate slot also includes a substrate slot bottom, and the upper surface of the support platform is higher than or equal to the bottom of the substrate slot.

[0011] Optionally, the upper surface of the support platform is parallel to the horizontal plane, the upper surface of the support platform is higher than the bottom of the substrate slot, and the depth of the depression at the bottom of the substrate slot gradually increases along the direction extending from the rotation center to the edge of the tray.

[0012] Optionally, the bottom of the substrate groove is parallel to the horizontal plane, the upper surface of the support platform is higher than the bottom of the substrate groove, and the upper surface of the support platform at the distal end is higher than the upper surface of the support platform at the proximal end.

[0013] Optionally, it further includes: at least one stopper provided on the first tray surface, wherein the stopper is located at the distal end.

[0014] Optionally, it also includes: a heat insulating material arranged on the inner side wall of the distal end substrate groove; the heat insulating material includes: one or a combination of aluminum oxide, boron nitride, aluminum nitride or zirconium oxide.

[0015] Optionally, the support platform extends from the inner side wall of the substrate groove toward the center of the substrate groove.

[0016] Optionally, the upper surface of the support platform is higher than the bottom of the substrate groove, the support platform is located at the bottom of the substrate groove, and there is a gap between the support platform and the substrate groove.

[0017] Optionally, it also includes: a first emission material layer located on the inner surface of the distal end of the substrate groove; a second emission material layer located on the inner surface of the proximal end of the substrate groove, and the emissivity of the first emission material layer is greater than the emissivity of the second emission material layer.

[0018] Optionally, the support platform is the bottom of the substrate groove.

[0019] Optionally, the height difference between the upper surface of the support table and the second tray surface is such that when the substrate to be processed is placed on the support table, the height difference between the second tray surface and the substrate to be processed is 80 microns to 130 microns.

[0020] Optionally, the height difference between the second tray surface and the surface of the substrate to be processed is 100 microns to 130 microns.

[0021] Optionally, the first tray surface is in the shape of a circular ring, and the radial width of the circular ring is 0 mm to 5 mm.

[0022] Optionally, the first tray surface is in the shape of a circular ring, and the radial width of the circular ring is 2 mm to 4 mm.

[0023] Correspondingly, the present invention also provides a metal organic chemical vapor deposition reactor including the above-mentioned tray, comprising: a reaction chamber; the above-mentioned tray, located in the reaction chamber; and a rotation drive device, used to rotate the tray along its central axis.

[0024] Optionally, it also includes: a heating device, located below the tray, for heating the tray; a gas shower head, located in the reaction chamber and arranged opposite to the tray; and a gas delivery device, for delivering reaction gas into the gas shower head.

[0025] Optionally, the rotation drive device causes the tray to rotate along its central axis at a speed greater than or equal to 200 revolutions per minute.

[0026] Optionally, the surface of the substrate to be processed includes, in order from top to bottom, a transition layer, a cathode layer located on the transition layer, a light-emitting layer located on the cathode layer, and a cathode layer located on the light-emitting layer.

[0027] Optionally, the material of the transition layer is undoped gallium nitride; the material of the cathode layer is N-type gallium nitride doped with silicon ions; the material of the light-emitting layer is indium gallium nitride; and the material of the anode layer is P-type gallium nitride doped with magnesium ions.

[0028] Optionally, the size of the substrate to be processed includes at least one of 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches and 12 inches.

[0029] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0030] In the metal organic chemical vapor deposition reactor provided by the technical solution of the present invention, the temperature for forming the light emitting layer on the substrate to be processed is low, and the warping of the substrate to be processed is not serious. Since the height difference between the substrate to be processed and the first tray surface is small, the temperature consistency of each position of the substrate to be processed is good, so it is beneficial to improve the uniformity of the wavelength of the epitaxial layer formed on the surface of the substrate to be processed. However, the temperature for forming the non-light emitting layer on the substrate to be processed is high, and the warping of the substrate to be processed is serious. The serious warping makes the distance from the edge area of ​​the substrate to be processed to the upper surface of the support table greater than the distance from the center area of ​​the substrate to the upper surface of the support table. The height of the second tray surface is higher than that of the first tray surface, so the second tray surface can compensate for the temperature difference between the edge area and the center area of ​​the substrate to be processed, which is beneficial to improve the temperature consistency of different areas of the substrate to be processed. Therefore, it is beneficial to improve the uniformity of the thickness of the epitaxial layer formed on the surface of the substrate to be processed. The thickness of the epitaxial layer is relatively uniform, which is beneficial to improve the electrical performance of the device. In summary, the wavelength and thickness uniformity of the formed epitaxial layer are good, which can meet the performance requirements of the display. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a structural schematic diagram of a metal organic chemical vapor deposition reactor of the present invention;

[0032] Figure 2 yes Figure 1 An enlarged schematic diagram of area B;

[0033] Figure 3 yes Figure 2 A schematic diagram of a cross-section structure along line M;

[0034] Figure 4 for Figure 2 A schematic diagram of a cross-sectional structure along line N;

[0035] Figure 5 for Figure 2 Another cross-sectional structure schematic diagram along line N;

[0036] Figure 6 for Figure 2 Another schematic diagram of the cross-section structure along line N;

[0037] Figure 7 for Figure 2 Another schematic diagram of the cross-sectional structure along line N;

[0038] Figure 8 for Figure 2 There is also a cross-sectional structural diagram along the N line. DETAILED DESCRIPTION

[0039] As described in the background art, the performance of forming an epitaxial layer using an existing metal organic chemical vapor deposition reactor is poor and is difficult to meet the performance requirements of a display.

[0040] The study found that:

[0041] The use of existing metal organic compound chemical vapor deposition reactors to form epitaxial layers is mainly used to prepare blue-green LED devices for lighting, and the blue-green LED devices for lighting do not have high requirements for the uniformity of the emission wavelength, so the control of the warping of the epitaxial layer is not so strict, that is, even if the epitaxial layer is warped, it can still meet the lighting needs. In order to prevent the substrate to be processed from flying under the action of centrifugal force, the surface of the substrate to be processed is usually lower than the first tray surface, and when the substrate to be processed is placed in the substrate groove, the distance between the surface of the substrate to be processed and the first tray surface is large. However, the surface of the substrate to be processed is lower than the first tray surface, and when the substrate to be processed is placed in the substrate groove, the distance between the surface of the substrate to be processed and the first tray surface is large. Although flying chips can be prevented, the consistency of airflow and temperature is poor, which makes the wavelength consistency of the light-emitting layer in the epitaxial layer formed by the existing metal organic compound chemical vapor deposition reactor poor, and therefore, it is difficult to meet the high performance requirements of the display.

[0042] In order to solve the above technical problems, the technical solution of the present invention provides a tray and a metal organic chemical vapor deposition reactor containing the tray, wherein the tray includes: the tray can rotate along its central axis, has a first tray surface and a second tray surface located outside the first tray surface, the second tray surface is higher than the first tray surface, the first tray surface is provided with a plurality of substrate grooves recessed in the first tray surface, each of the substrate grooves is provided with a plurality of support platforms, and the support platforms are used to support the substrate to be processed. The metal organic chemical vapor deposition reactor containing the tray can not only prevent the substrate to be processed from flying out, but also improve the consistency of the airflow and temperature on the surface of the substrate to be processed, thereby improving the uniformity of the wavelength and thickness of the epitaxial layer formed on the surface of the substrate to be processed, and can meet the performance requirements of the display.

[0043] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0044] Figure 1 It is a structural schematic diagram of a metal organic chemical vapor deposition reactor of the present invention; Figure 2 yes Figure 1 An enlarged schematic diagram of area B; Figure 3 yes Figure 2 Schematic diagram of a cross-sectional structure along line M.

[0045] Please refer to Figures 1 to 3The metal organic chemical vapor deposition reactor comprises: a reaction chamber 100; a tray 200, located in the reaction chamber 100, having a first tray surface A (see Figure 2 ) and a second tray surface C (see Figure 2 ), the second tray surface C is higher than the first tray surface A, the first tray surface A is provided with a plurality of substrate slots 202 recessed in the first tray surface A, and each of the substrate slots 202 is provided with a plurality of support platforms 203 (see Figure 3 ), the support table 203 is used to support the substrate W to be processed.

[0046] The reaction chamber 100 is used for performing a metal organic chemical vapor deposition process. A plurality of substrate slots 202 are provided in the tray 200. Each substrate slot 202 is used to accommodate a substrate to be processed. An epitaxial layer is formed on the surface of the substrate to be processed by the metal organic chemical vapor deposition process. The epitaxial layer is used to prepare a display.

[0047] The epitaxial layer includes: a transition layer located on the surface of the substrate to be processed, a cathode layer located on the transition layer, a light-emitting layer located on the cathode layer, and a cathode layer located on the light-emitting layer.

[0048] In this embodiment, the material of the transition layer is undoped gallium nitride; the material of the cathode layer is N-type gallium nitride doped with silicon ions; the material of the light-emitting layer is indium gallium nitride; and the material of the anode layer is P-type gallium nitride doped with magnesium ions.

[0049] The temperature for forming the transition layer, the cathode layer and the anode layer on the substrate W to be processed is relatively high, and the substrate W to be processed is severely warped, so that the distance from the edge region of the substrate W to be processed to the upper surface of the support table 203 is greater than the distance from the center region of the substrate to the upper surface of the support table 203. The height of the second tray surface C is higher than that of the first tray surface A. The second tray surface C can compensate for the temperature difference between the edge region and the center region of the substrate W to be processed, which is beneficial to improve the consistency of the temperature of different regions of the substrate W to be processed, and therefore, is beneficial to improve the uniformity of the thickness of the formed epitaxial layer. The thickness of the epitaxial layer is relatively uniform, which is beneficial to improve the electrical performance of the device.

[0050] In one embodiment, the height difference between the upper surface of the support table 203 and the second pallet surface C is such that when the substrate W to be processed is placed on the support table 203, the height difference between the second pallet surface C and the substrate W to be processed is 80 microns to 130 microns, so that the second pallet surface C has a better insulation effect on the temperature of the edge area of ​​the substrate W to be processed, which is beneficial to improving the thickness consistency of the formed epitaxial layer.

[0051] In another embodiment, the height difference between the second tray surface C and the substrate W to be processed is 100 microns to 130 microns, so that the second tray surface C has a better ability to compensate for the edge area of ​​the substrate W to be processed, and the temperature difference between the edge area and the central area of ​​the substrate W to be processed is smaller, which is beneficial to further improve the uniformity of the formed epitaxial layer.

[0052] The height difference between the second tray surface C and the first tray surface A is: 50 microns to 130 microns. If the height difference between the second tray surface C and the first tray surface A is less than 50 microns, the ability of the second tray surface C to compensate for the edge area of ​​the substrate W to be processed is poor, and the temperature difference between the edge area and the central area of ​​the substrate W to be processed is large, so that the thickness consistency of the epitaxial layer formed on the surface of the substrate W to be processed is poor; if the height difference between the second tray surface C and the first tray surface A is greater than 130 microns, the ability of the second tray surface C to compensate for the edge area of ​​the substrate W to be processed is too strong, so that the temperature of the edge area of ​​the substrate W to be processed is higher than the temperature of the central area, and it is easy to cause local turbulence, so the thickness consistency of the epitaxial layer formed on the surface of the substrate W to be processed is still poor.

[0053] In one embodiment, the first tray surface A is annular, and the radial width L of the annular is: 0 mm to 5 mm. The significance of selecting the radial width L of the annular is that if the radial width L of the annular is greater than 5 mm, the second tray surface C is difficult to compensate for the temperature of the edge area of ​​the substrate W to be processed.

[0054] In another embodiment, the first tray surface A is annular, and the radial width L of the annular is 2 mm to 4 mm. The significance of selecting the radial width L of the annular is that if the radial width L of the annular is greater than 4 mm, the second tray surface C has a poor effect of compensating the temperature of the edge area of ​​the substrate W to be processed; if the radial width L of the annular is less than 2 mm, when the light-emitting layer is formed on the surface of the substrate W to be processed, the temperature consistency of the surface of the substrate W to be processed is poor, and the wavelength uniformity of the formed light-emitting layer is poor.

[0055] The first tray surface A and the substrate W to be processed are described in detail as follows:

[0056] Figure 4 for Figure 2 Schematic diagram of a cross-sectional structure along line N.

[0057] The intersection of the central axis and the tray 200 is the rotation center of the tray. The substrate slot 202 includes a distal end and a proximal end, and the distance from the distal end to the rotation center is greater than the distance from the proximal end to the rotation center. The substrate slot 202 also includes a substrate slot bottom 290, and the upper surface of the support table 203 is higher than or equal to the substrate slot bottom 290. In the process of preparing the epitaxial layer, the tray 200 rotates along its central axis under the action of the rotation drive device 300. Specifically, the rotation drive device causes the tray to rotate along its central axis at a speed greater than or equal to 200 revolutions per minute, so that the substrate to be processed is easily deviated in a direction away from the rotation center under the action of centrifugal force.

[0058] In this embodiment, due to the improvement of the preparation process, when the transition layer and the cathode layer are grown in the reaction chamber 100, the warping of the substrate to be processed is not so serious. Therefore, when the substrate to be processed is placed in the substrate slot 202, the surface of the substrate to be processed does not have to be lower than the first tray surface A to prevent the flying of the substrate. Specifically, the height difference between the upper surface of the support table 203 and the first tray surface A is such that when the substrate to be processed is placed on the support table 203, there is a first distance H1 between the upper surface of the substrate to be processed and the corresponding upper surface of the support table 203, and there is a second distance H2 between the first tray surface A and the corresponding upper surface of the support table 203. The difference between the first distance H1 and the second distance H2 is: -80 microns to 80 microns. Since the center of gravity of the substrate to be processed is lower than the first tray surface A, the substrate to be processed is not easy to fly out when the transition layer and the cathode layer are formed, and the substrate to be processed is less likely to warp when the light-emitting layer is formed. Therefore, the substrate to be processed is not easy to fly out when the light-emitting layer is formed. At the same time, since the difference between the first distance H1 and the second distance H2 is -80 microns to 80 microns, the disturbance of the airflow used to form the epitaxial layer reaching the substrate to be processed is reduced, which is conducive to improving the consistency of the airflow and temperature on the substrate to be processed. The distribution of indium ions is closely related to the uniformity of temperature distribution. Therefore, the consistency of temperature is conducive to improving the uniformity of the distribution of indium ions, and the wavelength consistency of the formed light-emitting layer is better, which can meet the performance requirements of the display.

[0059] In one embodiment, the difference between the first distance H1 and the second distance H2 is: -50 microns to 50 microns. The significance of selecting the difference between the first distance H1 and the second distance H2 is that the disturbance of the airflow used to form the epitaxial layer reaching the substrate to be processed is smaller, which is conducive to improving the consistency of the surface temperature of the substrate to be processed and the consistency of the thickness of the epitaxial layer, and further helps to improve the wavelength consistency of the light-emitting layer to meet the performance requirements of the display.

[0060] In another embodiment, the first distance H1 is equal to the second distance H2. The significance of such selection is that the gas flow forming the epitaxial layer reaches the surface of the substrate to be processed with almost no disturbance, which is conducive to improving the consistency of the surface temperature of the substrate to be processed and the consistency of the thickness of the epitaxial layer, and further conducive to improving the wavelength consistency of the light-emitting layer to meet the performance requirements of the display. In this embodiment, the substrate to be processed has a notch, and the notch faces the distal end.

[0061] In this embodiment, the support platform 203 extends from the inner side wall of the substrate groove 202 toward the center of the substrate groove 202 .

[0062] In order to achieve the difference between the first distance H1 and the second distance H2 of -80 microns to 80 microns, the thickness of the tray 200 is kept constant, and the height of the support table 203 and the bottom of the substrate groove 202 are raised. At the same time, raising the height of the support table 203 and the bottom of the substrate groove 202 is conducive to reducing the consistency of the temperature of the substrate to be processed, thereby improving the consistency of the epitaxial layer formed on the surface of the substrate to be processed.

[0063] The size of the substrate to be processed includes at least one of 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches and 12 inches.

[0064] In this embodiment, it also includes: a heat insulating material 201 disposed on the inner side wall of the distal end substrate groove 202; the heat insulating material 201 includes: one or more combinations of aluminum oxide, boron nitride, aluminum nitride or zirconium oxide, etc. The heat insulating material 201 is used to reduce the heat transferred from the side wall of the distal end substrate groove 202 to the substrate to be processed, which is conducive to reducing the thickness consistency of the epitaxial layer grown at the distal end and the proximal end of the edge of the substrate to be processed.

[0065] The metal organic chemical vapor deposition reactor also includes: a heating device, located below the tray 200, for heating the tray 200; a gas shower head 400, located in the reaction chamber 100 and arranged opposite to the tray 200 structure; and a gas delivery device 500, for delivering reaction gas into the gas shower head 400.

[0066] In this embodiment, the substrate slot 202 further includes a substrate slot bottom 290, and the upper surface of the support platform 203 is higher than the substrate slot bottom 290. In other embodiments, the upper surface of the support platform is the substrate slot bottom.

[0067] Figure 5 for Figure 2 Schematic diagram of another cross-sectional structure along line N.

[0068] In this embodiment, it also includes: a first emission material layer 240 located on the inner surface of the distal end of the substrate groove 202; and a second emission material 250 located on the inner surface of the proximal end of the substrate groove 202. The emissivity of the first emission material layer 240 is greater than the emissivity of the second emission material layer 250. The significance of such a design is that although the substrate to be processed is easily offset in the direction away from the rotation center under the action of centrifugal force, so that the gap between the substrate to be processed at the distal end and the side wall of the substrate groove 202 is smaller than the gap between the substrate to be processed at the proximal end and the side wall of the substrate groove 202, the emissivity of the first emission material layer 240 is greater than the emissivity of the second emission material layer 250, so that the temperature difference between the edge areas of the distal end and the proximal end of the substrate to be processed is small, which is beneficial to improving the consistency of the epitaxial layer on the surface of the substrate to be processed.

[0069] Figure 6 for Figure 2 Another schematic diagram of the cross-sectional structure along line N.

[0070] In this embodiment, the upper surface of the support platform 203 is parallel to the horizontal plane, the upper surface of the support platform 203 is higher than the bottom 290 of the substrate groove, and the depression depth of the bottom 290 of the substrate groove gradually increases along the direction extending from the rotation center to the edge of the tray 200. The significance of such a design is that although the substrate to be processed is easily offset in the direction away from the rotation center under the action of centrifugal force, so that the gap between the substrate to be processed at the distal end and the substrate groove 202 is smaller than the gap between the substrate to be processed at the proximal end and the substrate groove 202, the depression depth of the bottom 290 of the substrate groove gradually increases along the direction extending from the rotation center to the edge of the tray 200, so that the temperature difference between the edge areas of the distal end and the proximal end of the substrate to be processed is small, which is beneficial to improving the consistency of the epitaxial layer on the surface of the substrate to be processed.

[0071] Figure 7 for Figure 2 Another schematic diagram of the cross-sectional structure along line N.

[0072] In this embodiment, the surface of the bottom 290 of the substrate groove is parallel to the horizontal plane, the upper surface of the support platform 203 is higher than the bottom 290 of the substrate groove, and the upper surface of the support platform 203 at the distal end is higher than the upper surface of the support platform 203 at the proximal end, so that when the substrate to be processed is placed in the substrate groove 202, the distance from the bottom of the substrate to be processed to the bottom surface of the substrate groove 202 at the distal end is greater than the distance from the bottom of the substrate to be processed to the bottom surface of the substrate groove 202 at the proximal end. The significance of such a design is that although the substrate to be processed is easily deviated in the direction away from the rotation center under the action of centrifugal force, the substrate to be processed at the distal end and the substrate groove 202 are 02 is smaller than the gap between the substrate to be processed at the proximal end and the substrate groove 202, but the upper surface of the support table 203 is higher than the bottom 290 of the substrate groove, and the distal end of the support table 203 is higher than the top of the proximal end of the support table 203, and the surface of the bottom 290 of the substrate groove is parallel to the horizontal plane, so that the distance H3 from the bottom of the substrate to be processed to the bottom surface of the distal end substrate groove 202 is greater than the distance from the bottom of the substrate to be processed to the bottom surface of the proximal end substrate groove 202, then the temperature difference between the edge areas of the distal end and the proximal end of the substrate to be processed is small, which is beneficial to improving the consistency of the epitaxial layer on the surface of the substrate to be processed.

[0073] Figure 8 for Figure 2 There is also a cross-sectional structural diagram along the N line.

[0074] In this embodiment, it further comprises: at least one stopper 204 disposed on the first tray surface A, and the stopper 204 is located at the distal end. When the rotation drive device 300 drives the tray 200 to rotate along its central axis, the stopper 204 is located at the distal end, which is beneficial to further prevent the substrate to be processed from flying out under the action of centrifugal force.

[0075] In this embodiment, the upper surface of the support platform 203 is higher than the bottom 290 of the substrate groove, the support platform 203 is located at the bottom 290 of the substrate groove, and there is a gap between the support platform 203 and the substrate groove 202. Since the contact area between the support platform 203 and the substrate to be processed is small, the heat transferred to the substrate to be processed through the support platform 203 is small. Therefore, it is beneficial to reduce the temperature consistency of the edge area of ​​the substrate to be processed, and to improve the consistency of the epitaxial layer on the surface of the substrate to be processed.

[0076] In summary, the temperature for forming the light-emitting layer on the substrate to be processed is relatively low, and the warping of the substrate to be processed is not serious. Since the height difference between the substrate to be processed and the first tray surface is relatively small, the temperature consistency of each position of the substrate to be processed is relatively good, which is beneficial to improve the uniformity of the wavelength of the epitaxial layer formed on the surface of the substrate to be processed. However, the temperature for forming the non-light-emitting layer (the non-light-emitting layer refers to the epitaxial layer other than the light-emitting layer, specifically including the transition layer, the cathode layer and the anode layer) on the substrate to be processed is relatively high, and the warping of the substrate to be processed is relatively serious. The serious warping makes the distance from the edge area of ​​the substrate to be processed to the upper surface of the support platform greater than the distance from the center area of ​​the substrate to the upper surface of the support platform. The height of the second tray surface is higher than that of the first tray surface, and the second tray surface can compensate for the temperature difference between the edge area and the center area of ​​the substrate to be processed, which is beneficial to improve the temperature consistency of different areas of the substrate to be processed. Therefore, it is beneficial to improve the uniformity of the thickness of the epitaxial layer formed on the surface of the substrate to be processed. The thickness of the epitaxial layer is relatively uniform, which is beneficial to improve the electrical performance of the device. In summary, the wavelength and thickness uniformity of the formed epitaxial layer are good and can meet the performance requirements of the display.

[0077] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A tray for a metal organic chemical vapor deposition reactor, the metal organic chemical vapor deposition reactor further comprising a heating device, arranged below the tray, for heating the tray, characterized in that: include: The tray can rotate along its central axis, and has a first tray surface and a second tray surface arranged on the periphery of the first tray surface, the second tray surface is higher than the first tray surface, the first tray surface is provided with a substrate groove recessed in the first tray surface, and a plurality of support tables are arranged in each of the substrate grooves, and the support tables are used to support the substrates to be processed, and the tray drives the support tables to rotate in the same direction, and the height difference between the second tray surface and the first tray surface is: 50 microns to 130 microns, and a step is formed between the second tray surface and the first tray surface; the height difference between the upper surface of the support table and the first tray surface is such that when the substrate to be processed is placed on the support table, the upper surface of the substrate to be processed has a first distance to the upper surface corresponding to the support table, and the first tray surface has a second distance to the upper surface corresponding to the support table, and the difference between the first distance and the second distance is: -80 microns to 80 microns.

2. The pallet according to claim 1, characterized in that The difference between the first distance and the second distance is: -50 micrometers to 50 micrometers.

3. The pallet according to claim 2, characterized in that: The first distance is equal to the second distance.

4. The pallet according to claim 1, characterized in that: The intersection of the central axis and the tray is the rotation center of the tray, the substrate slot includes a distal end and a proximal end, the distance from the distal end to the rotation center is greater than the distance from the proximal end to the rotation center; the substrate slot also includes a substrate slot bottom, and the upper surface of the support platform is higher than or equal to the substrate slot bottom.

5. The tray according to claim 4, characterized in that The upper surface of the support platform is parallel to the horizontal plane, the upper surface of the support platform is higher than the bottom of the substrate slot, and the depth of the depression at the bottom of the substrate slot gradually increases along the direction extending from the rotation center to the edge of the tray.

6. The tray according to claim 4, characterized in that The bottom of the substrate groove is parallel to the horizontal plane, the upper surface of the support platform is higher than the bottom of the substrate groove, and the upper surface of the support platform at the distal end is higher than the upper surface of the support platform at the proximal end.

7. The tray according to claim 4, characterized in that Also includes: At least one stopper is disposed on the first tray surface, the stopper is located at the distal end, and is used to prevent the substrate to be processed from flying out.

8. The tray according to claim 4, characterized in that Also includes: The heat insulating material is arranged on the inner side wall of the distal end substrate groove; the heat insulating material comprises: one or a combination of aluminum oxide, boron nitride, aluminum nitride or zirconium oxide.

9. The tray according to claim 1, characterized in that: The support platform extends from the inner side wall of the substrate groove toward the center of the substrate groove.

10. The tray according to claim 4, characterized in that The upper surface of the support platform is higher than the bottom of the substrate groove, the support platform is located at the bottom of the substrate groove, and there is a gap between the support platform and the side wall of the substrate groove.

11. The tray according to claim 1, characterized in that: Also includes: A first emitting material layer located on the inner surface of the distal end of the substrate groove; A second emitting material layer is located on the inner surface of the proximal end of the substrate groove, and the emissivity of the material of the first emitting material layer is greater than the emissivity of the material of the second emitting material layer.

12. The tray according to claim 4, characterized in that The supporting platform is the bottom of the substrate groove.

13. The pallet according to claim 1, wherein: The height difference between the upper surface of the support table and the second tray surface is such that when the substrate to be processed is placed on the support table, the height difference between the second tray surface and the surface of the substrate to be processed is 80 microns to 130 microns.

14. The pallet according to claim 13, characterized in that The height difference between the second tray surface and the substrate to be processed is 100 microns to 130 microns.

15. The pallet according to claim 1, wherein: The first tray surface is in the shape of a circular ring, and the radial width of the circular ring is 0 mm to 5 mm.

16. The pallet according to claim 15, characterized in that The first tray surface is in the shape of a circular ring, and the radial width of the circular ring is 2 mm to 4 mm.

17. A metal organic chemical vapor deposition reactor comprising the tray, characterized in that: include: Reaction chamber; The tray according to any one of claims 1 to 16, located in the reaction chamber; The rotary drive device is used to rotate the tray along its central axis.

18. The metal organic chemical vapor deposition reactor according to claim 17, characterized in that: Also includes: The gas shower head is located in the reaction chamber and is arranged opposite to the tray; the gas delivery device is used for delivering the reaction gas into the gas shower head.

19. The metal organic chemical vapor deposition reactor according to claim 17, characterized in that: The rotation drive device causes the tray to rotate along its central axis at a speed greater than or equal to 200 revolutions per minute.

20. The metal organic chemical vapor deposition reactor according to claim 17, characterized in that: The surface of the substrate to be processed sequentially includes a transition layer, a cathode layer located on the transition layer, a light-emitting layer located on the cathode layer, and a cathode layer located on the light-emitting layer.

21. The metal organic chemical vapor deposition reactor according to claim 20, characterized in that: The material of the transition layer is gallium nitride without ions; the material of the cathode layer is N-type gallium nitride doped with silicon ions; the material of the light-emitting layer is indium gallium nitrogen compound; and the material of the anode layer is P-type gallium nitride doped with magnesium ions.

22. The metal organic chemical vapor deposition reactor according to claim 17, characterized in that: The size of the substrate to be processed includes at least one of 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches and 12 inches.

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