Semiconductor device manufacturing method and semiconductor device

Abstract

The object of the present invention is to provide a method for manufacturing a semiconductor device and a semiconductor device capable of reducing manufacturing costs. The method for manufacturing a semiconductor device according to the present invention comprises the following steps: step (a), preparing a lead frame having a die pad for a switching element, a die pad for a control element, and a third side beam portion; step (b), placing a switching element and a diode element on the die pad for the switching element, and placing a control element for controlling the switching element on the die pad for the control element; step (c), encapsulating the switching element, the diode element, and the control element by molding resin in a manner that a power side terminal, a control side terminal, and a portion of the third side beam portion protrude to the outside; and step (d), cutting out from the third side beam portion to form a third side beam terminal extending from a portion of the third side beam portion.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device and a semiconductor device. Background Art

[0002] Conventionally, there is disclosed a semiconductor device having lead terminals extending from each of four side surfaces of a lead frame to the outside (for example, see Patent Document 1).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2014-93303

[0004] In Patent Document 1, the molded resin portion can be miniaturized compared to a structure having lead terminals extending from only two opposing side surfaces among four side surfaces of a lead frame. However, since the lead terminals extend from side surfaces other than the two opposing side surfaces to the outside, the size of the lead frame becomes larger. Therefore, the number of semiconductor devices that can be provided on one lead frame is reduced, and therefore, the number of semiconductor devices that can be produced together is reduced, resulting in a problem of increased manufacturing cost of semiconductor devices. Summary of the invention

[0005] The present invention has been made to solve such a problem, and an object of the present invention is to provide a method for manufacturing a semiconductor device and a semiconductor device capable of reducing manufacturing costs.

[0006] In order to solve the above-mentioned problems, the manufacturing method of the semiconductor device involved in the present invention has the following steps: step (a), preparing a lead frame, which has a tube core pad for a switching element connected to a power side terminal arranged on the first side when viewed from above, a tube core pad for a control element connected to a control side terminal arranged on the second side opposite to the first side, and a third side beam portion arranged on a third side different from the first side and the second side; step (b), placing a switching element and a diode element on the tube core pad for the switching element, and placing a control element for controlling the switching element on the tube core pad for the control element; step (c), encapsulating the switching element, the diode element and the control element by means of a molding resin in a manner that the power side terminal, the control side terminal and a part of the third side beam portion protrude to the outside; and step (d), cutting out from the third side beam portion to form a third side beam terminal extending from a part of the third side beam portion.

[0007] Effects of the Invention

[0008] According to the present invention, the method for manufacturing a semiconductor device includes the step of cutting out the third side beam portion to form the third side beam terminal extending from a part of the third side beam portion, thereby being able to reduce manufacturing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1This is a cross-sectional view showing an example of the structure of the semiconductor device according to the first embodiment.

[0010] Figure 2 It is a plan view showing an example of the structure of the semiconductor device according to the first embodiment.

[0011] Figure 3 This is a circuit diagram showing an example of the structure of the semiconductor device according to the first embodiment.

[0012] Figure 4 This is a flowchart showing an example of a manufacturing process of the semiconductor device according to the first embodiment.

[0013] Figure 5 It is a plan view showing an example of a manufacturing process of the semiconductor device according to the first embodiment.

[0014] Figure 6 It is a plan view showing an example of a manufacturing process of the semiconductor device according to the first embodiment.

[0015] Figure 7 This is a plan view showing an example of the appearance of the semiconductor device according to the first embodiment.

[0016] Figure 8 This is a side view showing an example of the appearance of the semiconductor device according to the first embodiment.

[0017] Fig. 9 It is a plan view showing an example of a manufacturing process of a semiconductor device according to the second embodiment.

[0018] Fig.10 This is a plan view showing an example of the appearance of a semiconductor device according to the second embodiment.

[0019] Fig.11 This is a side view showing an example of the appearance of a semiconductor device according to the second embodiment.

[0020] Fig.12 This is a plan view showing an example of the appearance of a semiconductor device according to the second embodiment.

[0021] Fig.13 This is a plan view showing an example of the appearance of a semiconductor device according to the third embodiment.

[0022] Fig.14 This is a side view showing an example of the appearance of a semiconductor device according to the third embodiment.

[0023] Fig.15 This is a plan view showing an example of the appearance of a semiconductor device according to a fourth embodiment.

[0024] Fig.16 This is a side view showing an example of the appearance of a semiconductor device according to a fourth embodiment.

[0025] Fig.17 It is a top view showing an example of a manufacturing process of a semiconductor device according to the fifth embodiment.

[0026] Fig.18 This is a plan view showing an example of the appearance of a semiconductor device according to the fifth embodiment.

[0027] Fig.19 This is a side view showing an example of the appearance of a semiconductor device according to the fifth embodiment.

[0028] Fig. 20 This is a diagram for explaining the effects of the semiconductor device according to the fifth embodiment.

[0029] Fig.21 This is a diagram for explaining the effects of the semiconductor device according to the fifth embodiment. DETAILED DESCRIPTION

[0030] <Implementation method 1>

[0031] Figure 1 This is a cross-sectional view showing an example of the structure of the semiconductor device according to the first embodiment. Figure 2 It is a plan view showing an example of the structure of the semiconductor device according to the first embodiment. Figure 3 This is a circuit diagram showing an example of the structure of the semiconductor device according to the first embodiment.

[0032] like Figures 1 to 3 As shown, the semiconductor device has: a power chip 5 as a switch element; a freewheeling diode 6 as a diode element; an IC 2 (a high voltage IC 9 and a low voltage IC 10) as a control element, which controls the power chip 5; and a bootstrap diode 3. Figure 2 As shown, six power chips 5, six freewheeling diodes 6 and three bootstrap diodes 3 are respectively arranged along the upper and lower directions of the paper.

[0033] The power chip 5 and the freewheeling diode 6 are mounted on a power chip die pad 11, and a power-side terminal 4 is connected to the power chip die pad 11. The power-side terminal 4 includes a P terminal, a U terminal, a V terminal, a W terminal, a NU terminal, a NV terminal, and a NW terminal.

[0034] The IC 2 is mounted on the IC die pad 13, the bootstrap diode 3 is mounted on the control element die pad 12, and the IC die pad 13 and the control element die pad 12 are respectively connected to the control side terminal 1. In addition, the control side terminal 1 includes a VS (U) terminal, a VB (U) terminal, a VS (V) terminal, a VB (V) terminal, a VS (W) terminal, a VB (W) terminal, a UP terminal, a VP terminal, a WP terminal, a VCC terminal, a GND terminal, a UN terminal, a VN terminal, a WN terminal, a first function terminal, and a second function terminal.

[0035] The power chip 5, the flyback diode 6, and the IC 2 are connected by a wire 7. In addition, the power chip 5, the flyback diode 6, the IC 2, and the bootstrap diode 3 are encapsulated by a mold resin 8. The power-side terminal 4 and the control-side terminal 1 protrude to the outside from opposite sides of the mold resin 8. In this way, the semiconductor device according to the first embodiment is an electric power semiconductor device encapsulated by the mold resin 8 and used for high-power applications.

[0036] Figure 4 1 is a flowchart showing an example of a manufacturing process of a semiconductor device according to Embodiment 1. Figure 4 The order of step S1 , step S2 , and step S3 shown is not limited thereto, and may be any order.

[0037] In the power chip die bonding process of step S1, as Figure 5 As shown, the power chip 5 is placed on the power chip die pad 11 , and the power chip 5 is electrically connected to the power chip die pad 11 . The power chip die pad 11 is a part of the lead frame 14 .

[0038] In the diode die bonding process of step S2, as Figure 5 As shown, the flywheel diode 6 is placed on the power chip die pad 11 , and the flywheel diode 6 and the power chip die pad 11 are electrically connected.

[0039] In the IC die bonding process of step S3, Figure 5 As shown, the high voltage IC 9 and the low voltage IC 10 are placed on the IC die pad 13, and the high voltage IC 9 and the low voltage IC 10 are electrically connected to the IC die pad 13. The IC die pad 13 is a part of the lead frame 14.

[0040] In addition, the step of placing the bootstrap diode 3 on the control element die pad 12 and electrically connecting the bootstrap diode 3 and the control element die pad 12 may be performed in either step S2 or step S3.

[0041] In the wire bonding process of step S4, Figure 5As shown, the power chip 5 and the freewheeling diode 6 , the power chip 5 and the high-voltage IC 9 , the power chip 5 and the low-voltage IC 10 , and the high-voltage IC 9 and the bootstrap diode 3 are electrically connected through the wire 7 .

[0042] In the transfer molding process of step S5, Figure 6 As shown, the power chip 5, the freewheeling diode 6, the high-voltage IC 9, the low-voltage IC 10 and the bootstrap diode 3 are packaged by the molding resin 8 in such a manner that a power side terminal 4, a control side terminal 1 and a part of a side rail portion 15 (a third side rail portion provided on a third side different from the first side and the second side) protrude to the outside.

[0043] In the connecting rod cutting process of step S6, the connecting rods connecting the terminals included in the power side terminal 4 and the connecting rods connecting the terminals included in the control side terminal 1 are cut and removed. Thus, the terminals are separated. Figure 5 As shown, the power side terminals 4, namely the P terminal, U terminal, V terminal, W terminal, NU terminal, NV terminal and NW terminal, are arranged on the first side of the lead frame 14. In addition, the control side terminals 1, namely the VS (U) terminal, VB (U) terminal, VS (V) terminal, VB (V) terminal, VS (W) terminal, VB (W) terminal, UP terminal, VP terminal, WP terminal, VCC terminal, GND terminal, UN terminal, VN terminal and WN terminal, are arranged on the second side opposite to the first side. At this time, the first function terminal and the second function terminal are not arranged on the second side of the lead frame 14.

[0044] In the lead cutting process of step S7, the outer periphery of the lead frame 14 (at Figure 6 Thus, the first functional terminal and the second functional terminal are formed from the side beam portion 15. That is, the first functional terminal and the second functional terminal (third side beam terminal) are formed in a manner extending from a part of the side beam portion 15 provided on the third side of the lead frame 14.

[0045] In the lead forming process of step S8, Figure 7 , 8 As shown, the power-side terminal 4 and the control-side terminal 1 are bent so that each terminal has a desired shape.

[0046] In summary, according to the first embodiment, the first functional terminal and the second functional terminal which were previously arranged on the second side of the lead frame are formed from the side beam portion 15 provided on the third side of the lead frame, so that not only the molded resin can be miniaturized (that is, the semiconductor device can be miniaturized), but also the size of the lead frame can be reduced. Therefore, the number of semiconductor devices that can be provided on one lead frame does not decrease, the number of semiconductor devices that can be produced together increases, and the manufacturing cost of the semiconductor device can be reduced.

[0047] In addition, by forming the first functional terminal and the second functional terminal only on the side beam portion 15 of the lead frame 14, when the completed semiconductor device (product) is placed in a box (tube, etc.), friction and contact between the terminals can be prevented, thereby preventing damage to the product.

[0048] In addition, the structure in which the first functional terminal and the second functional terminal are formed on the side beam portion 15 of the lead frame 14 is described above, but the present invention is not limited thereto. The type and number of terminals formed on the side beam portion 15 and the direction in which these terminals are bent can be arbitrary. In addition, terminals can also be formed from the side beam portion 16 instead of the side beam portion 15. In this case, for example, the VS (U) terminal and the VB (U) terminal can also be formed from the side beam portion 16.

[0049] <Implementation method 2>

[0050] In the first embodiment, the structure in which the first functional terminal and the second functional terminal are formed on the side beam portion 15 of the lead frame 14 is described. In the second embodiment, it is characterized in that the terminal is also formed on the side beam portion 16 of the lead frame 14. The other structures and manufacturing processes are the same as those in the first embodiment, so detailed description is omitted here.

[0051] Fig. 9 is a top view showing an example of a manufacturing process of a semiconductor device according to Embodiment 2, showing Figure 6 The semiconductor device after the connecting bar cutting process of step S6 is shown. Fig.10 This is a plan view showing an example of the appearance of a semiconductor device according to the second embodiment. Fig.11 This is a side view showing an example of the appearance of a semiconductor device according to the second embodiment.

[0052] exist Figure 6 In the lead cutting process of step S7 shown in FIG. 1 , the outer periphery of the lead frame 14 (at Fig. 9 Thus, the first functional terminal and the second functional terminal (third side beam terminal) are formed from the side beam portion 15 (third side beam portion).

[0053] In addition, the VS(U) terminal and the VB(U) terminal are formed from the side beam portion 16 (the fourth side beam portion provided on the fourth side opposite to the third side). That is, the VS(U) terminal and the VB(U) terminal (the fourth side beam terminal) are formed in a manner extending from a portion of the side beam portion 16 provided on the fourth side of the lead frame 14.

[0054] The positions where the first and second functional terminals provided on the third side protrude from the mold resin 8 are not opposite to the positions where the VS (U) and VB (U) terminals provided on the fourth side protrude from the mold resin 8 .

[0055] In summary, according to the second embodiment, the first functional terminal and the second functional terminal which were previously arranged on the second side of the lead frame are formed from the side beam portion 15 provided on the third side of the lead frame, and the VS (U) terminal and the VB (U) terminal are formed from the side beam portion 16 provided on the fourth side of the lead frame. Therefore, compared with the first embodiment, not only the mold resin can be miniaturized (that is, the semiconductor device can be miniaturized), but also the size of the lead frame can be reduced. Therefore, compared with the first embodiment, the manufacturing cost of the semiconductor device can be reduced.

[0056] In addition, the positions where the first functional terminal and the second functional terminal provided on the third side protrude from the mold resin 8 are not opposite to the positions where the VS (U) terminal and the VB (U) terminal provided on the fourth side protrude from the mold resin 8. Fig.12 As shown, when the completed semiconductor device (product) is placed in a box (tube, etc.), friction and contact between the terminals can be prevented, and damage to the product can be prevented.

[0057] In addition, in the above, the structure in which the first functional terminal and the second functional terminal are formed on the side beam portion 15 of the lead frame 14, and the VS (U) terminal and the VB (U) terminal are formed on the side beam portion 16 of the lead frame 14 is described, but the present invention is not limited thereto. The type and number of terminals formed on the side beam portion 15 and the side beam portion 16, respectively, and the directions in which these terminals are bent can be arbitrary.

[0058] <Implementation method 3>

[0059] In the first embodiment, the first functional terminal and the second functional terminal corresponding to the existing function, which were previously arranged on the second side of the lead frame, are formed from the side beam portion 15 provided on the third side of the lead frame. In the third embodiment, it is characterized in that the terminal corresponding to the newly added function is formed from the side beam portion 15 provided on the third side of the lead frame. The other structures and manufacturing processes are the same as those in the first embodiment, so detailed description is omitted here.

[0060] Fig.13This is a plan view showing an example of the appearance of a semiconductor device according to the third embodiment. Fig.14 This is a side view showing an example of the appearance of a semiconductor device according to the third embodiment.

[0061] like Fig.13 As shown, the third functional terminal and the fourth functional terminal (third side beam terminal) are formed from the side beam portion 15 (third side beam portion). In addition, the existing terminals including the first functional terminal and the second functional terminal are provided on the second side of the lead frame 14.

[0062] In summary, according to the third embodiment, a terminal corresponding to the newly added function is formed from the side beam portion provided on the third side of the lead frame, so that the new function can be mounted on the semiconductor device without changing the size (product size) of the completed semiconductor device.

[0063] Furthermore, the size of the lead frame does not change, and the number of semiconductor devices that can be provided on one lead frame does not decrease, so an increase in the manufacturing cost of the semiconductor device can be prevented.

[0064] In addition, the structure in which the third functional terminal and the fourth functional terminal are formed on the side beam portion 15 of the lead frame 14 is described above, but the present invention is not limited thereto. The type and number of terminals formed on the side beam portion 15 and the direction in which these terminals are bent can be arbitrary. In addition, terminals can also be formed from the side beam portion 16 instead of the side beam portion 15. In this case, for example, the third functional terminal and the fourth functional terminal can also be formed from the side beam portion 16.

[0065] <Implementation method 4>

[0066] In the third embodiment, the structure of forming a terminal corresponding to the newly added function on the side beam portion 15 of the lead frame 14 is described. In the fourth embodiment, it is characterized in that a terminal corresponding to the newly added function is also formed on the side beam portion 16 of the lead frame 14. The other structures and manufacturing processes are the same as those in the third embodiment, so detailed description is omitted here.

[0067] Fig.15 This is a plan view showing an example of the appearance of a semiconductor device according to a fourth embodiment. Fig.16 This is a side view showing an example of the appearance of a semiconductor device according to a fourth embodiment.

[0068] like Fig.15As shown, the terminals corresponding to the newly added functions, namely the third functional terminal and the fourth functional terminal (third side beam terminal) are formed from the side beam portion 15 (third side beam portion). In addition, the terminals corresponding to the newly added functions, namely the fifth functional terminal and the sixth functional terminal (fourth side beam terminal) are formed from the side beam portion 16 (fourth side beam portion). In addition, the existing terminals including the first functional terminal and the second functional terminal are provided on the second side of the lead frame 14.

[0069] In summary, according to Embodiment 4, the side beams provided on the third and fourth sides of the lead frame form terminals corresponding to the newly added functions. Thus, the number of newly added functions can be increased compared to Embodiment 3 without increasing manufacturing costs.

[0070] In addition, in the above, the structure in which the third and fourth functional terminals are formed on the side beams 15 of the lead frame 14, and the fifth and sixth functional terminals are formed on the side beams 16 of the lead frame 14 is described, but the present invention is not limited thereto. The type and number of terminals formed on the side beams 15 and 16, respectively, and the directions in which the terminals are bent may be arbitrary.

[0071] <Implementation method 5>

[0072] Fig.17 is a top view showing an example of a manufacturing process of a semiconductor device according to Embodiment 5, showing Figure 6 The semiconductor device after the connecting bar cutting process of step S6 is shown. Fig.18 This is a plan view showing an example of the appearance of a semiconductor device according to the fifth embodiment. Fig.19 This is a side view showing an example of the appearance of a semiconductor device according to the fifth embodiment.

[0073] exist Figure 6 In the lead cutting process of step S7 shown in FIG. 1 , the outer periphery of the lead frame 14 (at Fig.17 Thus, a GND terminal extending toward the first side where the power-side terminal 4 is provided is formed from the hanging portion 17 connecting the side beam portion 15 (third side beam portion) of the lead frame 14 and the IC die pad 13. That is, the GND terminal is composed of the hanging portion 17 and the portion cut out from the side beam portion 15, and its direction is the same as that of the power-side terminal 4.

[0074] In summary, according to Embodiment 5, the GND terminal is arranged close to the NU terminal, the NV terminal, and the NW terminal. In the structure ( Fig. 20), the wiring length connecting the NU terminal, the NV terminal, and the NW terminal to the GND terminal becomes longer, which causes an increase in inductance and an increase in surge voltage. Fig.21 The structure of the fifth embodiment shown can shorten the wiring length connecting the NU terminal, the NV terminal, and the NW terminal to the GND terminal while maintaining the size of the semiconductor device, thereby preventing an increase in inductance and suppressing an increase in surge voltage.

[0075] In addition, the semiconductor device according to the fifth embodiment is not limited to the structure described above, and may be a structure arbitrarily combined with the structures described in the first to fourth embodiments.

[0076] <Implementation method 6>

[0077] In the sixth embodiment, the power chip 5 and the freewheeling diode 6 of the semiconductor device according to the first to fifth embodiments are made of a wide bandgap semiconductor. Here, as wide bandgap semiconductors, there are, for example, SiC and GaN. The other structures and the manufacturing method of the semiconductor device are the same as those of the first to fifth embodiments, so detailed description is omitted here.

[0078] The power chip 5 and the flyback diode 6 made of wide bandgap semiconductors have high withstand voltage and high allowable current density, so it is possible to miniaturize the power chip 5 and the flyback diode 6. Therefore, it is possible to miniaturize a semiconductor device having the miniaturized power chip 5 and the flyback diode 6.

[0079] The power chip 5 and the freewheeling diode 6 made of wide bandgap semiconductors have high heat resistance, and therefore the heat dissipation fins of the heat sink can be miniaturized.

[0080] The power chip 5 and the flyback diode 6 made of wide bandgap semiconductors have low power loss, so that the efficiency of the power chip 5 and the flyback diode 6 can be improved, and thus the efficiency of the semiconductor device can be improved.

[0081] It is preferable that both the power chip 5 and the flyback diode 6 are formed of wide bandgap semiconductors, but either the power chip 5 or the flyback diode 6 may be formed of a wide bandgap semiconductor. In this case, the same effects as above are obtained.

[0082] Furthermore, the various embodiments may be freely combined, or the various embodiments may be appropriately modified or omitted within the scope of the present invention.

[0083] Description of the label

[0084] 1 control side terminal, 2 IC, 3 bootstrap diode, 4 power side terminal, 5 power chip, 6 freewheeling diode, 7 wire, 8 molding resin, 9 high voltage IC, 10 low voltage IC, 11 die pad for power chip, 12 die pad for control element, 13 die pad for IC, 14 lead frame, 15 side beam portion, 16 side beam portion, 17 suspension portion.

Claims

1. A method for manufacturing a semiconductor device, comprising the following steps: Step (a), preparing a lead frame having a switch element die pad connected to a power side terminal arranged on a first side when viewed from above, a control element die pad connected to a control side terminal arranged on a second side opposite to the first side, and a third side beam portion provided on a third side different from the first side and the second side; Step (b), placing a switching element and a diode element on the switching element die pad, and placing a control element for controlling the switching element on the control element die pad; Step (c), encapsulating the switch element, the diode element, and the control element by a molding resin in a manner that the power side terminal, the control side terminal, and a portion of the third side beam portion protrude to the outside; and Step (d) of cutting out the third side beam portion to form a third side beam terminal extending from a portion of the third side beam portion.

2. The method for manufacturing a semiconductor device according to claim 1, wherein: The lead frame has a fourth side beam portion on a fourth side opposite to the third side. In the step (c), the fourth side beam portion is encapsulated by the molding resin in a manner that a portion of the fourth side beam portion protrudes to the outside. In the step (d), the fourth side beam terminal is formed by cutting out from the fourth side beam portion and extending from a part of the fourth side beam portion.

3. The method for manufacturing a semiconductor device according to claim 2, wherein: The third side beam terminal is not opposite to the fourth side beam terminal.

4. The method for manufacturing a semiconductor device according to claim 1, wherein: The third side beam terminal is a terminal formed to correspond to a newly added function.

5. The method for manufacturing a semiconductor device according to claim 2, wherein: The fourth side beam terminal is a terminal formed to correspond to a newly added function.

6. The method for manufacturing a semiconductor device according to claim 1, wherein: The lead frame includes an IC die pad for mounting an IC, and a suspension portion connecting the IC die pad to the third side beam portion. In the step (c), the hanging portion is encapsulated by the molding resin in such a manner that the hanging portion protrudes to the outside. In the step (d), the GND terminal is formed by cutting out from the third side beam portion and extending from the hanging portion toward the first side.

7. The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein: At least one of the switching element and the diode element is formed of a wide bandgap semiconductor.

8. A semiconductor device comprising: A lead frame having a switch element die pad connected to a power side terminal arranged on a first side in a plan view, a control element die pad connected to a control side terminal arranged on a second side opposite to the first side, and a third side beam portion provided on a third side different from the first side and the second side; a switching element and a diode element, which are mounted on the switching element die pad; a control element mounted on the control element die pad and controlling the switch element; as well as a molding resin that packages the switch element, the diode element, and the control element in such a manner that the power side terminal, the control side terminal, and the third side beam terminal as a part of the third side beam portion protrude to the outside, The lead frame has a fourth side beam portion on a fourth side opposite to the third side. A fourth side beam terminal as a part of the fourth side beam portion protrudes from the molded resin to the outside, The third side beam terminal is not opposite to the fourth side beam terminal.

9. The semiconductor device according to claim 8, wherein: The third side beam terminal is a terminal corresponding to a newly added function.

10. The semiconductor device according to claim 8, wherein The fourth side beam terminal is a terminal corresponding to a newly added function.

11. A semiconductor device comprising: A lead frame having a switch element die pad connected to a power side terminal arranged on a first side in a plan view, a control element die pad connected to a control side terminal arranged on a second side opposite to the first side, and a third side beam portion provided on a third side different from the first side and the second side; a switching element and a diode element, which are mounted on the switching element die pad; a control element mounted on the control element die pad and controlling the switch element; as well as a molding resin that packages the switch element, the diode element, and the control element in such a manner that the power side terminal, the control side terminal, and the third side beam terminal as a part of the third side beam portion protrude to the outside, The lead frame includes an IC die pad for mounting an IC, and a suspension portion connecting the IC die pad to the third side beam portion. The GND terminal including the hanging portion protrudes from the third side of the mold resin and extends toward the first side.

12. The semiconductor device according to claim 11, wherein The third side beam terminal is a terminal corresponding to a newly added function.

13. The semiconductor device according to any one of claims 8 to 12, wherein: At least one of the switching element and the diode element is formed of a wide bandgap semiconductor.

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