Substrate processing apparatus

Abstract

The present inventive concept provides a substrate processing apparatus. In one embodiment, the substrate processing apparatus includes a process chamber having a processing space, a support unit supporting a substrate in the processing space, and a supply line supplying a process gas into the processing space, and the support unit includes a heating plate having a heater pattern on a lower surface thereof and heating the supported substrate, and an insulation layer covering the heater pattern and the lower surface of the heating plate.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0127288, filed with the Korean Intellectual Property Office on September 29, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a substrate processing apparatus, and more specifically to an apparatus for heating a substrate. Background Technology

[0004] Various processes, such as patterning, etching, deposition, and cleaning, are performed to manufacture semiconductor devices. Patterning is a process used to form patterns and plays an important role in the high integration of semiconductor devices.

[0005] The imaging process mainly includes application, exposure, and development processes, with a baking process performed before and after the exposure process. The baking process is a process of transferring heat to the substrate to heat-treat it. In the baking process, after the substrate is placed on a heating plate, heating elements located in the heating plate transfer heat to the substrate to heat-treat it.

[0006] In recent years, to achieve finer linewidths, attempts have been made to introduce photoresists that incorporate metallic materials (such as metal oxides) rather than chemical materials (such as acrylates (salts) or styrene). During the baking process of the photoresist, mist is supplied as a process gas into the process chamber to control humidity. The inventors realized that as the humidity inside the process chamber increases due to the supplied mist, the insulating layer, comprising materials (such as epoxy resin), formed on the heater pattern constituting the heating unit, absorbs moisture and affects the heater pattern. In particular, the paste used to manufacture the metallic pattern is Ag-based and susceptible to ion migration, with a high potential for defects due to electrochemical migration (ECM). Summary of the Invention

[0007] An embodiment of the present invention provides a substrate processing apparatus that can effectively process substrates.

[0008] An embodiment of the present invention also provides a substrate processing apparatus that can prevent ECM caused by a humid environment.

[0009] An embodiment of the present invention also provides a substrate processing apparatus including a heating unit, the heating unit including a support unit in which the base can obtain excellent mechanical properties with a set thickness.

[0010] An embodiment of the present invention also provides a substrate processing apparatus that can minimize the deflection of the heating plate due to heat.

[0011] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0012] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a process chamber, a support unit, and a supply line. The process chamber has a processing space, the support unit supports the substrate within the processing space, and the supply line supplies process gas to the processing space. The support unit includes a heating plate and an insulating layer. A heater pattern is formed on the lower surface of the heating plate, and the heating plate heats the supported substrate. The insulating layer covers the heater pattern and the lower surface of the heating plate.

[0013] Process gases may include moisture (e.g., water).

[0014] The insulating layer can be formed from materials including thermosetting resins.

[0015] Thermosetting resins can include epoxy resins.

[0016] The insulating layer can be formed from epoxy molding compound.

[0017] Epoxy molding compounds may include: 65 wt% to 88 wt% of inorganic fillers relative to a total of 100 wt%; 7 wt% to 30 wt% of epoxy resin; 2 wt% to 13 wt% of epoxy resin curing agent; and 1.25 wt% to 3 wt% of additives.

[0018] Epoxy molding compounds may include: 65 wt% to 88 wt% of inorganic fillers relative to a total of 100 wt%, and inorganic fillers having particles with a size of 2 μm to 30 μm, and relative to 100 wt% of inorganic fillers having 20 wt% to 35 wt% of particles with an average particle diameter of 5 μm or less, and having 65 wt% to 80 wt% of particles with an average particle diameter greater than 5 μm.

[0019] In inorganic fillers, particles with an average particle diameter of 5 μm or less can have a spherical shape, while particles with an average particle diameter greater than 5 μm can have an irregular shape.

[0020] The heating plate can have a thickness of 1 mm to 2 mm, and the insulation layer can have a thickness of 2 mm to 3 mm.

[0021] Multiple heater patterns can be provided, and when viewed from above, the heater patterns can be located in different areas of the heating plate.

[0022] Multiple heater patterns can be connected to a power cord that supplies power to the heater patterns, and the power cord can be inserted into an insertion hole formed in the insulation layer.

[0023] The diameter of the heating plate can be larger than the diameter of the substrate supported on the plane, and the insulating layer can have a diameter corresponding to that of the heating plate.

[0024] According to another aspect of the present invention, a substrate processing apparatus may include a process chamber, a support unit, and a supply line. The process chamber has a processing space, the support unit supports the substrate within the processing space, and the supply line supplies process gas, including moisture, to the processing space. The support unit may include a heating plate and an insulating layer. The diameter of the heating plate is larger than the diameter of the substrate supported on the plane. A heater pattern is provided on the lower surface of the heating plate, and the heating plate heats the supported substrate. The insulating layer has a diameter corresponding to that of the heating plate, covers the heater pattern and the lower surface of the heating plate, and comprises epoxy molding compound. The total amount of epoxy molding compound relative to the insulating layer... For 100 wt%, the epoxy molding compound may include: 65 wt% to 88 wt% inorganic filler, 7 wt% to 30 wt% epoxy resin, 2 wt% to 13 wt% epoxy resin curing agent, and 1.25 wt% to 3 wt% additives. The inorganic filler may have particles with a size of 2 to 30 μm, and relative to 100 wt% of the inorganic filler, the inorganic filler may have 20 wt% to 35 wt% of particles with an average particle diameter of 5 μm or smaller, and 65 wt% to 80 wt% of particles with an average particle diameter greater than 5 μm. The heating plate may have a thickness of 1 mm to 2 mm, and the insulating layer may have a thickness of 2 mm to 3 mm. Attached Figure Description

[0025] Referring to the following figures, the above and other objects and features will become apparent from the following description, wherein, unless otherwise stated, the same reference numerals refer to the same parts throughout the figures, and in the figures:

[0026] Figure 1 A view of a substrate processing apparatus according to an embodiment of the present invention is shown schematically;

[0027] Figure 2To show Figure 1 A cross-sectional view of a substrate processing apparatus for application blocks or developing blocks;

[0028] Figure 3 To show Figure 1 A plan view of the substrate processing apparatus;

[0029] Figure 4 To show Figure 3 An example view of the hand of the transmission unit;

[0030] Figure 5 For illustrative purposes only Figure 3 A planar cross-sectional view of an example heat treatment chamber;

[0031] Figure 6 To show Figure 5 A front cross-sectional view of the heat treatment chamber;

[0032] Figure 7 To show the setting Figure 6 A cross-sectional view of the substrate processing device in the heating unit;

[0033] Figure 8 To show when viewed from the bottom Figure 7 A view of the heating plate; and

[0034] Figure 9 To show Figure 7 An exploded perspective view of the state of the heating plate and insulation layer of the support unit. Detailed Implementation

[0035] Hereinafter, exemplary embodiments of the inventive concept will be described in more detail with reference to the accompanying drawings. Embodiments of the invention may be modified in various ways, and the scope of the inventive concept should not be construed as limited to the following embodiments. Embodiments of the inventive concept are provided to describe the invention more fully to those skilled in the art. Therefore, the shapes of the components in the drawings are exaggerated or reduced to emphasize a clearer description of the components.

[0036] Figure 1 A view of a substrate processing apparatus according to an embodiment of the present invention is shown for illustrative purposes. Figure 2 To show Figure 1 A cross-sectional view of a substrate processing apparatus for applying or developing blocks. Figure 3 To show Figure 1 A plan view of the substrate processing apparatus.

[0037] Reference Figures 1 to 3The substrate processing apparatus 1 includes an index module 20, a processing module 30, and an interface module 40. According to one embodiment, the index module 20, processing module 30, and interface module 40 are arranged sequentially in a row. Hereinafter, the direction in which the index module 20, processing module 30, and interface module 40 are arranged is referred to as the X-axis direction 12, the direction perpendicular to the X-axis direction 12 when viewed from above is referred to as the Y-axis direction 14, and the direction perpendicular to both the X-axis direction 12 and the Y-axis direction 14 is referred to as the Z-axis direction 16.

[0038] The indexing module 20 transfers the substrate "W" from the container 10 to the processing module 30, receives the substrate "W" in the container 10, and receives the fully processed substrate "W" in the container 10. The longitudinal direction of the indexing module 20 is the Y-axis direction 14. The indexing module 20 includes multiple loading ports 22 and an index frame 24. The loading ports 22 are positioned on opposite sides of the processing module 30 relative to the index frame 24. The container 10, in which the substrate "W" is received, is placed on the loading port 22. Multiple loading ports 22 can be provided, and the multiple loading ports 22 can be arranged along the Y-axis direction 14.

[0039] Container 10 can be a closed container, such as a front open unified pod (FOUP). Container 10 can be placed on loading port 22 by a supply unit (such as an overhead conveyor, overhead transport, or automated guided vehicle, not shown) or by an operator.

[0040] An indexing robot 2200 is disposed inside an indexing frame 24. A guide rail 2300 (with its longitudinal direction being the Y-axis direction 14) can be disposed within the indexing frame 24, and the indexing robot 2200 is movable on the guide rail 2300. The indexing robot 2200 includes a hand 2220, on which a substrate "W" is placed, and the hand 2220 can be movable forward and backward, rotatable about the Z-axis direction 16, and movable along the Z-axis direction 16.

[0041] Processing module 30 performs an application process and a development process on substrate "W". Processing module 30 has an application block 30a and a development block 30b. The application block 30a performs the application process on substrate "W", and the development block 30b performs the development process on substrate "W". Multiple application blocks 30a can be provided and stacked on top of each other. Multiple development blocks 30b can be provided and stacked on top of each other. Figure 1One embodiment includes two application blocks 30a and two developing blocks 30b. The application blocks 30a may be positioned below the developing blocks 30b. According to one embodiment, the two application blocks 30a can perform the same process and may have the same structure. Similarly, the two developing blocks 30b can perform the same process and may have the same structure.

[0042] Reference Figure 3 The application block 30a has a heat treatment chamber 3200, a transfer chamber 3400, a liquid processing chamber 3600, and a buffer chamber 3800. The heat treatment chamber 3200 performs a heat treatment process on the substrate "W". The heat treatment process may include a cooling process and a heating process. The liquid processing chamber 3600 supplies liquid to the substrate "W" and forms a liquid film. The liquid film may be a photoresist film or an anti-reflection film. The photoresist film may be a photoresist film comprising a metallic material (such as a metal oxide). The transfer chamber 3400 transfers the substrate "W" between the heat treatment chamber 3200 and the liquid processing chamber 3600 within the application block 30a.

[0043] The transfer chamber 3400 is configured such that its longitudinal direction is parallel to the X-axis direction 12. A transfer unit 3420 is disposed within the transfer chamber 3400. The transfer unit 3420 transfers a substrate between a heat treatment chamber 3200, a liquid treatment chamber 3600, and a buffer chamber 3800. According to one embodiment, the transfer unit 3420 has a hand "A" on which a substrate "W" is placed, and the hand "A" is movable forward and backward, rotatable about the Z-axis direction 16, and movable along the Z-axis direction 16. A guide rail 3300 (with its longitudinal direction parallel to the X-axis direction 12) may be disposed within the transfer chamber 3400, and the transfer unit 3420 is movable on the guide rail 3300.

[0044] Figure 4 To show Figure 3 A view of an example of the hand of the transmission unit. (See reference...) Figure 4The hand "A" has a base 3428 and a support boss 3429. The base 3428 may have an annular ring shape, and the circumferential portion of the base is curved. The base 3428 has an inner diameter larger than the diameter of the substrate "W". The support boss 3429 extends inward from the base 3428. A plurality of support bosses 3429 are provided, and the support bosses support the edge region of the substrate "W". According to one example, four support bosses 3429 may be provided at equal intervals. Preferably, the hand "A" of the transfer robot minimizes the contact area with the substrate "W", and the hand "A" of the transfer robot minimizes contamination caused by contact between the lower surface of the substrate "W" and the hand "A" by minimizing the contact area with the substrate "W".

[0045] Refer again Figure 2 and Figure 3 Multiple heat treatment chambers 3200 can be provided. The heat treatment chambers 3200 can be arranged along the X-axis direction 12. The heat treatment chambers 3200 are positioned on one side of the transfer chamber 3400.

[0046] Figure 5 For illustrative purposes only Figure 3 A planar cross-sectional view of an example heat treatment chamber. Figure 6 for Figure 5 A front cross-sectional view of the heat treatment chamber. The heat treatment chamber 3200 processes the substrate by heating the substrate or absorbing heat from the substrate. The heat treatment chamber 3200 performs a heat treatment process on the substrate by heating the substrate or absorbing heat from the substrate. The heat treatment chamber 3200 has a housing 3210, a cooling unit 3220, a transfer plate 3240, and a heating unit 3260.

[0047] The housing 3210 has a generally rectangular parallelepiped shape. A transfer inlet (not shown) is formed in the side wall of the housing 3210, through which the substrate "W" is introduced and exited. The transfer inlet can remain open. Optionally, a door (not shown) can be provided to open and close the transfer inlet. A cooling unit 3220, a heating unit 3260, and a transfer plate 3240 are disposed in the housing 3210. The cooling unit 3220 and the heating unit 3260 are arranged side by side along the Y-axis direction 14. According to one embodiment, the cooling unit 3220 can be positioned closer to the transfer chamber 3400 than the heating unit 3260.

[0048] Cooling unit 3220 can heat-treat substrate "W". Cooling unit 3220 heat-treats substrate "W" by absorbing heat from substrate "W" (by transferring cold air to the substrate). Cooling unit 3220 has a cryogenic plate 3222. Cryogenic plate 3222 can support substrate "W". Cryogenic plate 3222 can have a seat surface supporting substrate "W". Cooling channel 3224 can be formed inside cryogenic plate 3222. Cooling channel 3224 can be a channel through which cooling fluid flows. The cooling fluid flowing through cooling channel 3224 can be cooling water. One end of cooling channel 3224 can be connected to a first supply line 3285. The opposite end of cooling channel 3224 can be connected to a first recovery line 3286.

[0049] The refrigerant supply source 3280 can store cooling fluid. The refrigerant supply source 3280 can supply cooling fluid to the cooling unit 3220. Furthermore, the refrigerant supply source 3280 can recover cooling fluid from the cooling unit 3220. The cooling fluid supplied and / or recovered by the refrigerant supply source 3280 can be cooling water. However, this disclosure is not limited thereto; the cooling fluid can be cooling gas.

[0050] The refrigerant supply source 3280 may include a refrigerant supply port 3281 and a refrigerant recovery port 3282. Cooling fluid can be supplied through the refrigerant supply port 3281. Cooling fluid can be supplied to the cooling passage 3224 through the refrigerant supply port 3281. The refrigerant supply port 3281 may be connected to a first supply line 3285. Cooling fluid can be supplied to the cooling passage 3224 through the refrigerant supply port 3281 via the first supply line 3285. A first supply valve 3287 may be installed in the first supply line 3285. The first supply valve 3287 may be an on / off valve. However, this disclosure is not limited thereto; the first supply valve 3287 may be a flow regulating valve.

[0051] Furthermore, the refrigerant recovery port 3282 can recover cooling fluid. The refrigerant recovery port 3282 can recover the cooling fluid supplied to the cooling passage 3224. The refrigerant recovery port 3282 can be connected to a first recovery line 3286. The cooling fluid supplied to the cooling passage 3224 can be recovered through the refrigerant recovery port 3282 via the first recovery line 3286. For example, the refrigerant recovery port 3282 can recover the supplied cooling fluid by reducing the pressure in the cooling passage 3224 using the medium in the first recovery line 3286. A first recovery valve 3288 can be installed in the first recovery line 3286. The first recovery valve 3288 can be an on / off valve. However, this disclosure is not limited thereto; the first recovery valve 3288 can be a flow regulating valve.

[0052] The transfer plate 3240 has a generally disc-shaped shape and a diameter corresponding to that of the substrate "W". A notch 3244 is formed at the edge of the transfer plate 3240. The notch 3244 may have a shape corresponding to a protrusion 3429 formed on the hand "A" of the transfer manipulator in the aforementioned transfer unit 3420. Furthermore, the number of notches 3244 corresponds to the number of protrusions 3429 formed in the hand "A", and the notches 3244 are formed at positions corresponding to the protrusions 3429. When the upward / downward position of the hand "A" and the transfer plate 3240 changes while the hand "A" and the transfer plate 3240 are arranged in an upward / downward direction, the substrate "W" is transferred between the hand "A" and the transfer plate 3240. The transfer plate 3240 is mounted on a guide rail 3249 and moves along the guide rail 3249 via a driver 3246. A plurality of slit-shaped guide grooves 3242 are provided in the transfer plate 3240. The guide grooves 3242 extend from one end of the transfer plate 3240 into the interior of the transfer plate 3240. The longitudinal direction of the guide grooves 3242 is arranged along the Y-axis direction 14, and the guide grooves 3242 are positioned to be spaced apart from each other along the X-axis direction 12. When the substrate "W" is conveyed between the transfer plate 3240 and the heating unit 3260, the guide grooves 3242 prevent the transfer plate 3240 and the lifting pin from interfering with each other.

[0053] The heating unit 3260 can process the substrate "W" by transferring heat to the substrate "W".

[0054] A heating unit 3260 disposed in a heat treatment chamber 3200 can improve the adhesion between the photoresist and the substrate "W" by supplying gas while the substrate is heated. The gas can be a hydrophobic gas that makes the substrate "W" hydrophobic. According to one embodiment, the gas can be hexamethyldisilane gas.

[0055] Furthermore, the heating unit 3260 provided in other heat treatment chambers 3200 can perform a baking process by heating the substrate "W". For example, the heating unit 3260 provided in other heat treatment chambers 3200 can perform heat treatment by heating the substrate "W" in operations before and after the exposure process. In the following, the heating unit 3260 that performs the baking process by heating the substrate "W" will be described as an example. The heating unit 3260 according to an embodiment of the present invention is an apparatus for performing a baking process on a substrate "W" on which a photoresist film including metal is formed.

[0056] Figure 7 To show the setting Figure 6 A cross-sectional view of the substrate processing apparatus in the heating unit. (Refer to...) Figure 7The substrate processing apparatus 6000, which includes a heating unit 3260, may include a process chamber 6100, a driver 6200, an exhaust line 6300, a support unit 6400, and a supply line 6500.

[0057] Processing space 6102 is disposed within process chamber 6100. Process chamber 6100 may include upper chamber 6110 and lower chamber 6120. Upper chamber 6110 may be circular when viewed from above. Upper chamber 6110 may have a container shape with its lower side open. Upper chamber 6110 may also have a cylindrical shape with its lower side open. Lower chamber 6120 may be disposed below upper chamber 6110. Lower chamber 6120 may be circular when viewed from above. Lower chamber 6120 may have a container shape with its upper side open. Lower chamber 6120 may also have a container shape with its upper side open. When viewed from above, upper chamber 6110 and lower chamber 6120 may have the same diameter. Upper chamber 6110 and lower chamber 6120 may be combined to form processing space 6102. In addition, a seal (not shown) can be provided between the upper chamber 6110 and the lower chamber 6120 to more tightly close the processing space 6102.

[0058] The actuator 6200 can open or close the processing space 6102 included in the process chamber 6100. The actuator 6200 can be coupled to either the upper chamber 6110 or the lower chamber 6120. For example, the actuator 6200 can be coupled to the upper chamber 6110. The actuator 6200 coupled to the upper chamber 6110 can lift the upper chamber 6110 upwards and downwards. When the substrate “W” is transported into the processing space 6102, the actuator 6200 can raise the upper chamber 6110 to open the processing space 6102. Furthermore, when performing a process on the substrate “W”, the actuator 6200 can bring the upper chamber 6110 and the lower chamber 6120 into contact with each other to close the processing space 6102. Although the actuator 6200 is described as coupled to the upper chamber 6110 in the above example, the inventive concept is not limited thereto, and the actuator 6200 can be coupled to the lower chamber 6120 to raise the lower chamber 6120.

[0059] The discharge line 6300 can discharge atmosphere from the processing space 6102. For example, the discharge line 6300 can discharge byproducts (such as particles) generated during the processing of substrate "W" in the processing space 6102 to the outside. The discharge line 6300 can be coupled to the process chamber 6100. The discharge line 6300 can be coupled to either the upper chamber 6110 or the lower chamber 6120. For example, the discharge line 6300 can be connected to a partition wall 6410 that supports the support unit 6400 when passing through the lower chamber 6120. The discharge line 6300 can be positioned below the support unit 6400 to discharge atmosphere from the processing space 6102.

[0060] Supply line 6500 can supply mist to processing space 6102 as a process gas. For example, the mist could be moisture. Supply line 6500 can be connected to process chamber 6100. As an example, supply line 6500 can be connected to either upper chamber 6110 or lower chamber 6120. The humidity inside processing space 6102 can be increased to approximately 70% or more by the mist supplied to processing space 6102.

[0061] The partition wall 6410 can be disposed in the process chamber 6100. As an example, the partition wall 6410 can be disposed in the lower chamber 6120 and can be horizontally mounted at a position spaced apart from the bottom surface of the lower chamber 6120. The partition wall 6410 will space the space inside the process chamber 6100 upwards and downwards, with a processing space 6102 formed on the upper side of the partition wall 6410 and a lower space 6103 formed on the lower side of the partition wall 6410. The processing space 6102 can be configured as a space for processing the substrate "W", and a configuration (such as a lifting pin 6424 or a power line lifting module (not shown)) can be reserved in the lower space 6103.

[0062] The support unit 6400 can be supported by the upper surface of the partition wall 6410. The support unit 6400 can support the substrate "W" in the processing space 6102. The support unit 6400 may include a heating plate 6420 and a heater power supply 6450. The heating plate 6420 can heat the supported substrate "W". When viewed from above, the heating plate 6420 may have a plate-like shape. As an example, when viewed from above, the heating plate 6420 may have a disc-like shape.

[0063] The heating plate 6420 can support the substrate "W". For example, support pins 6422 and guide pins 6423 can be provided on the heating plate 6420. Furthermore, the heating plate 6420 can support the substrate "W" through the medium of the support pins 6422 and guide pins 6423. Multiple support pins 6422 can be provided. The support pins 6422 can support the lower surface of the substrate "W". The support pins 6422 can space the lower surface of the substrate "W" and the upper surface of the heating plate 6420 apart at a specific interval. The specific interval can be a few micrometers (μm) or tens of micrometers (μm). The support pins 6422 can prevent contamination caused by contact between the heating plate 6420 and the lower surface of the substrate "W" by spaced apart from the upper surface of the heating plate 6420 at a specific interval. However, since the heat transfer rate may decrease as the support pin 6422 rises, the lower surface of the substrate "W" and the upper surface of the heating plate 6420 are spaced apart from each other at an appropriate distance. This arrangement ensures efficient heat transfer of the support pin 6422 and prevents contamination. The support pin 6422 supports the lower surface and sides of the substrate "W". The guide pin 6423 helps to position the substrate "W" in the appropriate position on the support unit 6400. Even if heat is transferred to the substrate "W" and the substrate "W" undergoes thermal changes, the guide pin 6423 prevents the substrate "W" from becoming separated from the support unit 6400. Figure 7 The diagram shows the supporting surface of the lower surface of the substrate "W" supporting the guide pin 6423 and the protruding surface of the side portion of the supporting substrate "W" perpendicular to each other, but the inventive concept is not limited thereto. For example, the protruding surface of the side portion of the supporting substrate "W" can be configured to tilt upwards as the protruding surface moves outwards along the radial direction of the heating plate 6420. Therefore, even when the substrate "W" is placed rather inaccurately on the support unit 6400, the substrate "W" can be placed in the proper position on the support unit 6400. Furthermore, lifting pin holes 6425 can be formed in the heating plate 6420. Multiple lifting pin holes 6425 can be provided. When viewed from the top, the lifting pin holes 6425 can be spaced apart from each other along the circumferential direction of the heating plate 6420. Lifting pins 6424 can be inserted into the lifting pin holes 6425. Lifting pins 6424 can support the lower surface of the substrate "W" and can move the substrate "W" upwards and downwards.

[0064] Heating plate 6420 can be formed of a thermally conductive material. For example, heating plate 6420 can be formed of a material including metals. In contrast, heating plate 6420 can be formed of a material including ceramics. As an example, heating plate 6420 can be formed of aluminum nitride (AlN) material. In another embodiment, heating plate 6420 can be SiC or Al2O3. Heater pattern 6411 can be formed on the lower surface of heating plate 6420. Heater pattern 6411 can be connected to heater power supply 6450. Heater pattern 6411 can be heated by using electricity applied by heater power supply 6450. Heater pattern 6411 can be formed of Ag-based material. Heater pattern 6411 can be formed by using an Ag-based material paste in a printing scheme. Heater pattern 6411 can be electrically connected to heater power supply 6450. Heater pattern 6411 can be heated as heater power supply 6450 applies electricity to heater pattern 6411.

[0065] Figure 8 To show when viewed from the bottom Figure 7 A view of the heating plate. (Refer to...) Figure 8Multiple heater patterns 6411 can be formed on the lower surface of the heating plate 6420. The multiple heater patterns 6411 can adjust the temperature of different areas of the substrate "W" as viewed from top. Furthermore, the multiple heater patterns 6411 can be controlled independently. For example, the heater patterns 6411 may include a first heater pattern 6411a, a second heater pattern 6411b, a third heater pattern 6411c, a fourth heater pattern 6411d, a fifth heater pattern 6411e, a sixth heater pattern 6411f, and a seventh heater pattern 6411g. For example, the heater power supply 6450 may include a first heater power supply 6450a, a second heater power supply 6450b, a third heater power supply 6450c, a fourth heater power supply 6450d, a fifth heater power supply 6450e, a sixth heater power supply 6450f, and a seventh heater power supply 6450g. Furthermore, the first heater pattern 6411a, the second heater pattern 6411b, the third heater pattern 6411c, the fourth heater pattern 6411d, the fifth heater pattern 6411e, the sixth heater pattern 6411f, and the seventh heater pattern 6411g can be connected to the first heater power supply 6450a, the second heater power supply 6450b, the third heater power supply 6450c, the fourth heater power supply 6450d, the fifth heater power supply 6450e, the sixth heater power supply 6450f, and the seventh heater power supply 6450g, respectively. In other words, by independently controlling the power supplied to the multiple heater patterns 6411, the heat transferred to the substrate "W" can be independently controlled according to the region of the substrate "W" as viewed from above.

[0066] Refer again Figure 7 An insulating layer 6440 may be provided on the lower surface of the heating plate 6420. The insulating layer 6440 may be configured to cover the lower surface of the heating plate 6420. The insulating layer 6440 may be configured to cover the heater pattern 6411. More specifically, the insulating layer 6440 may be configured to cover both the lower surface of the heating plate 6420 and the heater pattern 6411.

[0067] An insulating layer 6440 can be formed on the lower surface of the heating plate 6420 and the heater pattern 6411. The insulating layer 6440 can be formed of a material comprising a resin. The insulating layer 6440 can be formed of a thermosetting resin. Here, the thermosetting resin can include epoxy resin. For example, the insulating layer 6440 can be formed of a material comprising an epoxy molding compound. The insulating layer 6440 can be formed of a material comprising an epoxy molding compound having excellent thermal conductivity. The insulating layer 6440 formed of a material comprising an epoxy molding compound can protect the heater pattern 6411 from the effects of the external environment (e.g., moisture, shock, and electrical charge).

[0068] Epoxy molding compounds can have the compositions shown in Table 1.

[0069] [Table 1] Composition of epoxy molding compound according to an embodiment of the present invention

[0070]

[0071] Inorganic fillers can constitute 65 to 88% by weight of the total composition of epoxy molding compounds. The inorganic fillers can be AlN, SiO2, Al2O3, or SiC. The inorganic fillers can be particles with a size of 2 μm to 30 μm. The average particle diameter of the inorganic fillers can be greater than 5 μm, and particles with mostly irregular shapes can constitute 65 wt% to 80 wt% of the total weight of the inorganic fillers. Alternatively, the average particle diameter of the inorganic fillers can be no greater than 5 μm, and molten particles with mostly irregular and spherical shapes can constitute 20 wt% to 35 wt% of the total weight of the inorganic fillers. When the inorganic filler comprises a large number of particles, the average particle diameter is relatively large. When particles with larger average diameters constitute 20 wt% to 35 wt% of the inorganic filler by weight, the physical properties of the inorganic filler become particularly superior. Inorganic fillers can reduce thermal stress caused by the thermal expansion of the polymer, and preferably, the inorganic filler constitutes 65% or more of the composition of the epoxy molding compound.

[0072] The epoxy resin can comprise 7 wt% to 30 wt% of the total composition of the epoxy molding compound. According to one embodiment, the epoxy resin can be a phenolic epoxy resin or a bisphenol A type epoxy resin. In another experiment according to an embodiment of the invention, the epoxy resin is a phenolic epoxy resin.

[0073] The epoxy resin curing agent can account for 2 wt% to 13 wt% of the total composition of the epoxy resin molding compound. In experiments conducted according to embodiments of the present invention, the epoxy resin curing agent can be a phenolic resin varnish curing agent.

[0074] Additives may comprise 1.25 wt% to 3 wt% of the total composition of the epoxy molding compound. Additives may include catalysts, release agents, coupling agents, and / or stress relievers. According to this embodiment, the catalyst may comprise 0.75 wt% to 1 wt% of the total composition of the epoxy molding compound, the release agent may comprise 0 to 0.5 wt% of the total composition of the epoxy molding compound, the coupling agent may comprise 0.5 wt% to 1 wt% of the total composition of the epoxy molding compound, and the stress reliever may comprise 0 to 0.5 wt% of the total composition of the epoxy molding compound. Because the insulating layer 6430 covers and protects the heater pattern 6411, ECM that may occur in the heater pattern 6411, which is susceptible to moisture or humid environments, can be prevented.

[0075] Furthermore, the insulation layer 6440 may have a socket. Multiple power lines (as described above) connecting multiple heater patterns 6411 and multiple heater power supplies 6450 can be inserted into the socket. Multiple heater patterns 6411 and multiple heater power supplies 6450 can be connected to each other via a daisy chain. Therefore, the power lines can be arranged more efficiently, and the exposure of the power lines can be minimized.

[0076] Figure 9 It shows Figure 7 An exploded perspective view of the heating plate and insulation layer of the support unit. (Refer to...) Figure 9 In conventional substrate processing apparatuses, the heating plate is thick. When the heating plate is thin, it may bend or break brittlely. However, according to an embodiment of the present invention, an insulating layer 6440 can be provided on the lower surface of the heating plate 6420. The insulating layer 6440 can be formed of a material including epoxy molding compound. The insulating layer 6440 can be formed of a material including epoxy molding compound with excellent thermal conductivity. That is, because the insulating layer 6440 is provided on the lower surface of the heating plate 6420, thermal deformation, bending, or breakage of the heating plate 6420 can be minimized even if the heating plate 6420 is very thin. In other words, the thickness of the heating plate 6420 can be significantly reduced by providing the insulating layer 6440. According to one embodiment, the thickness d1 of the heating plate 6420 can be 2 mm or less. Furthermore, the thickness d2 of the insulating layer 6440 can be 2 mm or more. In a more detailed example, the thickness d1 of the heating plate 6420 can be 1 mm. Furthermore, the thickness d2 of the insulating layer 6440 can be 3 mm. When the thickness d1 of the heating plate 6420 is small, the temperature uniformity can be increased.

[0077] Furthermore, the insulating layer 6440 can be directly coupled to various components. Because the insulating layer 6440 is formed of a material including epoxy molding compound, coupling holes can be formed within the insulating layer 6440 itself. In one embodiment, the coupling holes can be formed by laser drilling. When coupling holes are formed within the insulating layer 6440 itself, the insulating layer 6440 can be coupled to various components by means of coupling elements (such as screws or bolts). The coupling element can then be inserted into at least one coupling hole formed in the insulating layer 6440.

[0078] Refer again Figure 2 and Figure 3Multiple buffer chambers 3800 can be configured. Some buffer chambers 3800 are located between the index module 20 and the transmission chamber 3400. Hereinafter, these buffer chambers will be referred to as front buffers 3802. Multiple front buffers 3802 are configured and stacked on top of each other in an upward / downward direction. Other buffer chambers are located between the transmission chamber 3400 and the interface module 40. Hereinafter, these buffer chambers will be referred to as rear buffers 3804. Multiple rear buffers 3804 are configured and stacked on top of each other in an upward / downward direction. The front buffers 3802 and rear buffers 3804 temporarily hold multiple substrates "W". The substrates "W" held in the front buffers 3802 are fed in and out by the index robot 2200 and the transmission robot of the transmission unit 3420. The substrates "W" held in the rear buffers 3804 are fed in and out by the transmission robot of the transmission unit 3420 and the first robot 4602.

[0079] The developing block 30b has a heat treatment chamber 3200, a transfer chamber 3400, and a liquid processing chamber 3600. The heat treatment chamber 3200, transfer chamber 3400, and liquid processing chamber 3600 of the developing block 30b have a structure and arrangement substantially similar to those of the heat treatment chamber 3200, transfer chamber 3400, and liquid processing chamber 3600 of the application block 30a; therefore, a description of this structure and arrangement will be omitted. However, in the developing block 30b, all liquid processing chambers 3600 supply developing liquid in the same manner and provide the developing liquid to the liquid processing chamber 3600 for developing the substrate.

[0080] Interface module 40 connects processing module 30 to external exposure apparatus 50. Interface module 40 has interface frame 4100, additional process chamber 4200, interface buffer 4400 and transfer member 4600.

[0081] A fan filter unit can be provided at the upper end of the interface frame 4100, forming a downward flow within the fan filter unit. An additional process chamber 4200, an interface buffer 4400, and a transfer member 4600 are disposed within the interface frame 4100. The additional process chamber 4200 can perform specific additional processes before feeding the substrate "W" (on which a process has already been performed in the application block 30a) into the exposure apparatus 50. Optionally, the additional process chamber 4200 can perform specific additional processes before feeding the substrate "W" (on which a process has already been performed in the exposure apparatus 50) into the developing block 30b. According to one example, the additional process can be an edge exposure process for exposing the edge region of the substrate "W," an upper surface cleaning process for cleaning the upper surface of the substrate "W," or a lower surface cleaning process for cleaning the lower surface of the substrate "W." Multiple additional process chambers 4200 can be provided, and multiple additional process chambers can be stacked on top of each other. All additional process chambers 4200 can perform the same process. Optionally, some additional process chambers 4200 can perform different processes.

[0082] Interface buffer 4400 is provided with space in which substrate "W" temporarily resides during transport, the substrate "W" being transported between application block 30a, additional process chamber 4200, exposure apparatus 50 and developing block 30b. Multiple interface buffers 4400 can be provided, and multiple interface buffers 4400 can be stacked on top of each other.

[0083] According to one embodiment, the additional process chamber 4200 may be disposed on one surface of the transmission chamber 3400 along an extension of the longitudinal direction relative to the transmission chamber 3400, and the interface buffer 4400 may be disposed on the surface of the other side of the transmission chamber 3400.

[0084] The transfer member 4600 transfers a substrate "W" between the application block 30a, the additional process chamber 4200, the exposure apparatus 50, and the developing block 30b. The transfer member 4600 can be one or more robotic arms. According to one example, the transfer member 4600 has a first robotic arm 4602 and a second robotic arm 4606. The first robotic arm 4602 can transfer the substrate "W" between the application block 30a, the additional process chamber 4200, and the interface buffer 4400; the second robotic arm 4606 can transfer the substrate "W" between the interface buffer 4400 and the exposure apparatus 50; and the second robotic arm 4606 can transfer the substrate "W" between the interface buffer 4400 and the developing block 30b.

[0085] The first robotic arm 4602 and the second robotic arm 4606 each include a hand portion, on which a base plate "W" is placed respectively. The hand portion is movable forward and backward, rotatable about an axis parallel to the Z-axis direction 16, and movable along the Z-axis direction 16.

[0086] According to the embodiments conceived in this invention, the substrate can be processed effectively.

[0087] Furthermore, according to embodiments of the present invention, ECM caused by a humid environment can be prevented in the support unit of the heating unit provided in the substrate processing apparatus.

[0088] Furthermore, according to the embodiments of the present invention, the base of the support unit of the heating unit provided in the substrate processing apparatus can obtain excellent mechanical properties at a preset thickness.

[0089] Furthermore, according to the embodiments conceived in this invention, the deflection of the heating plate due to heat can be minimized.

[0090] The effects of this invention are not limited to those described above, and those skilled in the art will clearly understand any effects not mentioned from the specification and drawings.

[0091] The above detailed description illustrates the inventive concept. Furthermore, the foregoing description presents exemplary embodiments of the inventive concept, and the inventive concept can be used in various other combinations, variations, and environments. That is, the inventive concept can be modified and altered without departing from the scope of the inventive concept disclosed in the specification, the equivalent scope of the written disclosure, and / or the technical or knowledge scope of those skilled in the art. The written embodiments describe the optimal state for carrying out the technical spirit of the inventive concept, and various necessary changes can be made in the specific field of application and purpose of the inventive concept. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed embodiments. Furthermore, it should be understood that the appended claims include other embodiments.

Claims

1. A substrate processing apparatus comprising: a process chamber having a processing space; a support unit configured to support a substrate in the processing space; and a supply line configured to supply a process gas into the processing space; wherein the support unit includes: a heater plate having a heater pattern provided on a lower surface thereof and configured to heat the supported substrate; and an insulating layer covering the heater pattern and the lower surface of the heater plate, wherein a pattern groove is formed on an upper surface of the insulating layer, and the heater pattern is inserted into the pattern groove; wherein the heater pattern is formed on the lower surface of the heater plate by an Ag-based material, and the insulating layer covers the heater pattern and the lower surface of the heater plate to protect the heater pattern from an external environment; wherein the process chamber includes a partition wall, and the support unit is supported by an upper surface of the partition wall; wherein the process gas includes moisture; wherein the heater plate has a thickness of 1 mm to 2 mm, and wherein the insulating layer has a thickness of 2 mm to 3 mm, wherein the insulating layer is formed of an epoxy resin molding compound, wherein the epoxy resin molding compound includes: 65 wt% to 88 wt% of an inorganic filler; 7 wt% to 30 wt% of an epoxy resin; 2 wt% to 13 wt% of an epoxy resin curing agent; and 1.25 wt% to 3 wt% of an additive. The inorganic filler has particles having a size of 2 μm to 30 μm, and, with respect to 100 wt% of the inorganic filler, the inorganic filler has 20 wt% to 35 wt% of particles having an average particle diameter of 5 μm or less, and 65 wt% to 80 wt% of particles having an average particle diameter of more than 5 μm. Among the inorganic filler, the particles having the average particle diameter of 5 μm or less have a spherical shape, and the particles having the average particle diameter of more than 5 μm have an irregular shape.

2. The substrate processing apparatus according to claim 1, wherein A plurality of the heater patterns are provided, and 3. The substrate processing apparatus according to claim 2, wherein wherein the plurality of heater patterns are provided in different regions of the heater plate when viewed from the top.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein The plurality of heater patterns are connected to a power supply line that delivers power to the heater patterns, and wherein the power supply line is inserted into one insertion hole formed in the insulating layer.

5. The substrate processing apparatus according to claim 4, wherein The diameter of the heater plate is greater than the diameter of the substrate supported in a planar manner, and wherein the insulating layer has a diameter corresponding to that of the heater plate.

6. The substrate processing apparatus according to claim 1, wherein 7.A substrate processing apparatus comprising: a process chamber having a processing space; a support unit configured to support a substrate in the processing space; and a supply line configured to supply a process gas including moisture into the processing space; wherein the support unit includes: a heater plate having a heater pattern provided on a lower surface thereof and configured to heat the supported substrate; and an insulating layer covering the heater pattern and the lower surface of the heater plate, wherein a pattern groove is formed on an upper surface of the insulating layer, and the heater pattern is inserted into the pattern groove; ​ a heating plate having a diameter greater than a diameter of the substrate supported in a plane, a heater pattern being provided on a lower surface of the heating plate, and the heating plate being configured to heat the substrate supported thereon; and an insulating layer having a diameter corresponding to the heating plate, the insulating layer covering the heater pattern and the lower surface of the heating plate, and the insulating layer including an epoxy molding compound, wherein a patterned groove is formed on an upper surface of the insulating layer, the heater pattern being inserted into the patterned groove; wherein the heater pattern is formed on the lower surface of the heating plate by an Ag-based material, the insulating layer covering the heater pattern and the lower surface of the heating plate to protect the heater pattern from an external environment; wherein the process chamber includes a partition wall, the support unit being supported by an upper surface of the partition wall; wherein, with respect to a total of 100 wt% of the epoxy molding compound of the insulating layer, the epoxy molding compound includes: 65 wt% to 88 wt% of an inorganic filler; 7 wt% to 30 wt% of an epoxy resin; 2 wt% to 13 wt% of an epoxy resin curing agent; and 1.25 wt% to 3 wt% of an additive, wherein the inorganic filler has particles having a size of 2 μm to 30 μm, and, with respect to 100 wt% of the inorganic filler, the inorganic filler has 20 wt% to 35 wt% of particles having an average particle diameter of 5 μm or less, and 65 wt% to 80 wt% of particles having an average particle diameter of greater than 5 μm, wherein the heating plate has a thickness of 1 mm to 2 mm, and wherein the insulating layer has a thickness of 2 mm to 3 mm.

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