A MEMS-CMOS integrated structure and a manufacturing method thereof

Abstract

The application provides a MEMS-CMOS integrated structure and a manufacturing method thereof. The MEMS-CMOS integrated structure comprises a CMOS integrated circuit layer, a top conductive layer above the CMOS integrated circuit layer, the top conductive layer comprising electrode areas, a ground metal area and electrically connected metal areas arranged at intervals, an isolation structure in the same layer as the top conductive layer, the isolation structure being made of insulating material to isolate the electrode areas and the ground metal area, and a MEMS mechanical layer above the top conductive layer, the MEMS mechanical layer being completely etched and released to form a MEMS pattern, the MEMS pattern comprising movable MEMS structures, dummy layers and a ground layer arranged at intervals. The electrode areas are electrically connected to the CMOS integrated circuit layer; the ground metal area is used to ground the electrode areas during etching of the MEMS mechanical layer; the ground layer is used to ground the MEMS mechanical layer during etching of the MEMS mechanical layer; and the movable MEMS structures are electrically connected to the CMOS integrated circuit layer through corresponding electrically connected metal areas. Compared with the prior art, the application can prevent process damage during process processing.

Description

Technical Field

[0001] This invention relates to the field of micro-electro-mechanical systems (MEMS) technology, and in particular to an integrated MEMS and CMOS (Complementary Metal Oxide Semiconductor) structure and its manufacturing method. Background Technology

[0002] Micro-mechanical systems (MEMS) are integrated systems that utilize integrated circuit (IC) manufacturing technology to fabricate micro- and nano-sensors, integrated circuits, and components such as interfaces and power supplies onto one or more chips. Their primary purpose is to provide users with feedback information on detected quantities by interacting with the surrounding environment through sensing units. Due to their small size, high integration, and excellent performance, they have been widely used in consumer electronics, industrial manufacturing, and medical services. Typical MEMS devices include accelerometers, angular velocity meters, magnetic field sensors, pressure sensors, temperature and humidity sensors, biochemical sensors, microphones, and more.

[0003] Although MEMS design and IC manufacturing technologies have made great progress, there are still many limitations. Yield rate is an important indicator for controlling the quality of MEMS manufacturing, and process reliability is also one of the primary considerations for designers.

[0004] Therefore, in order to solve the above-mentioned technical problems in the process of manufacturing, it is necessary to propose a new technical solution. Summary of the Invention

[0005] One of the objectives of this invention is to provide a MEMS-CMOS integrated structure and its manufacturing method, which can prevent process damage during the manufacturing process.

[0006] According to one aspect of the present invention, a MEMS-CMOS integrated structure is provided, comprising:

[0007] A CMOS integrated circuit layer; a top conductive layer located above the CMOS integrated circuit layer, the top conductive layer including electrode regions, ground metal regions, and electrically connected metal regions arranged at intervals; an isolation structure, on the same layer as the top conductive layer, which is an insulating material used to isolate the electrode regions and the ground metal regions; a MEMS mechanical layer located above the top conductive layer, the MEMS mechanical layer forming a MEMS pattern after being completely etched and released, the MEMS pattern including mutually spaced MEMS movable structures, a dummy layer, and a ground layer; wherein, the electrode regions are located below the MEMS movable structures, and are used to sense the deformation or displacement of the MEMS movable structures. The generated electrical signal, and the electrode region is electrically connected to the CMOS integrated circuit layer; the ground metal region is used to ground the electrode region during the etching of the MEMS mechanical layer, and the ground metal region is not electrically connected to the electrode region after the MEMS mechanical layer is completely etched and released to form a MEMS pattern; the ground layer is used to ground the MEMS mechanical layer during the etching of the MEMS mechanical layer, and the ground layer is completely separated from other parts in the MEMS mechanical layer after the MEMS mechanical layer is completely etched and released to form a MEMS pattern; the MEMS movable structure is electrically connected to the CMOS integrated circuit layer via the corresponding electrical connection metal region.

[0008] According to another aspect of the present invention, the present invention provides a method for manufacturing a MEMS-CMOS integrated structure, comprising: providing a MEMS-CMOS integrated structure without etching a MEMS mechanical layer; and etching out the MEMS mechanical layer in the MEMS-CMOS integrated structure.

[0009] Compared with the prior art, the MEMS-CMOS integrated structure in this invention includes a CMOS integrated circuit layer, a top conductive layer and a MEMS mechanical layer stacked in sequence. During the etching of the MEMS mechanical layer, the electrode area of ​​the top conductive layer is kept grounded with the MEMS mechanical layer, thereby avoiding process damage caused by charge accumulation. Attached Figure Description

[0010] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Wherein:

[0011] Figure 1 This is a longitudinal cross-sectional view of the MEMS-CMOS integrated structure before etching the MEMS mechanical layer in one embodiment of the present invention;

[0012] Figure 2 This is a longitudinal cross-sectional schematic diagram of the MEMS-CMOS integrated structure after the MEMS mechanical layer has been completely etched and released in one embodiment of the present invention.

[0013] Figure 3 This is a top view of a MEMS pattern formed after the MEMS mechanical layer is completely etched and released in one embodiment of the present invention. Detailed Implementation

[0014] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0015] The term "an embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the invention. The phrase "in one embodiment" appearing in different places throughout this specification does not necessarily refer to the same embodiment, nor is it a single or selective embodiment that excludes other embodiments. Unless otherwise specified, the terms "connected," "linked," and "connected" used herein to indicate electrical connection refer to direct or indirect electrical connection.

[0016] In order to solve the technical problems existing in the background art during the process of manufacturing, the present invention provides a MEMS-CMOS integrated structure that can prevent process damage during the manufacturing process, and the structure layout can be used in combination with other micromechanical design and manufacturing solutions.

[0017] Please refer to Figure 1 As shown, it is a longitudinal cross-sectional schematic diagram of the MEMS-CMOS integrated structure before the etching of the MEMS mechanical layer in one embodiment of the present invention. Figure 1 The MEMS-CMOS integrated structure shown includes a MEMS mechanical layer 160, an anchoring structure 150, a top conductive layer 140, a secondary conductive layer 130, a via interconnect 120, a CMOS integrated circuit layer 100, an insulating layer 110, an isolation structure 180, and an electrode interconnect layer 170.

[0018] The CMOS integrated circuit layer 100 is fabricated before the other layers above it. In the sensor, it performs electrical functions such as chip control and signal acquisition and processing. For example, the CMOS integrated circuit layer 100 integrates the driving circuitry for the MEMS. Since the CMOS and MEMS are integrated in this design, rather than fabricated separately and connected by external leads, damage to the CMOS integrated circuit layer 100 should be avoided as much as possible during subsequent MEMS fabrication.

[0019] The insulating layer 110 is located between the top conductive layer 140 and the secondary conductive layer 130, between the CMOS integrated circuit layer 100 and the secondary conductive layer 130, and between different lines of the secondary conductive layer 130. Its function is electrical isolation and line protection. Its material is one or more of the commonly used insulating materials in semiconductor processes, such as silicon oxide and silicon nitride.

[0020] The through-hole interconnect 120 is located between different layers and serves as an electrical connection. Its material is one or more of the commonly used semiconductor materials such as polycrystalline silicon, copper, and tungsten.

[0021] The secondary conductive layer 130 (which may be referred to as the first conductive layer) is located above the CMOS integrated circuit layer 100 and is isolated by the insulating layer 110. It is mainly used for circuit routing, and its material can be conductive materials such as polysilicon, copper, and aluminum. In different embodiments, the secondary conductive layer 130 can be one or more layers. Figure 1 In the embodiment shown, the secondary conductive layer 130 includes a first type of circuit trace 131 and a second type of circuit trace 132.

[0022] A top conductive layer 140 (which may be referred to as a second conductive layer) is located above the secondary conductive layer 130, and its material may be conductive materials such as polycrystalline silicon, copper, or aluminum. Figure 1 In the illustrated embodiment, the top conductive layer 140 includes electrode regions 141, ground metal regions 142, and electrically connected metal regions 143 arranged at intervals along the surface of the top conductive layer 140. The electrode regions 141 are located within the MEMS movable structure 161 (see...). Figure 2 Below it, it is used to sense electrical signals generated by deformation or displacement of the MEMS movable structure 161.

[0023] The electrode region 141 is electrically connected to the CMOS integrated circuit layer 100 via a corresponding second-type circuit trace 132 in the secondary conductive layer 130 below it. Specifically, the electrode region 141 and the corresponding second-type circuit trace 132 are electrically connected through a via connection 120; the corresponding second-type circuit trace 132 is electrically connected to the CMOS integrated circuit layer 100 through the via connection 120.

[0024] The ground metal region 142 is electrically connected to the corresponding first-type circuit trace 131 in the underlying secondary conductive layer 130. The ground metal region 142 and the corresponding first-type circuit trace 131 are electrically connected through the via connection 120. During the etching of the MEMS mechanical layer 160, the first-type circuit trace 131 is grounded, so that the electrode region 141 is grounded via the ground metal region 142. In other words, during the etching of the MEMS mechanical layer 160, the ground metal region 142 is used to ground the electrode region 141.

[0025] The isolation structure 180 is on the same layer as the top conductive layer 140. The isolation structure 180 is made of insulating material and is used to isolate the grounded metal region 142 from the electrode region 141.

[0026] An electrode connection layer 170 is deposited above the top conductive layer 140. Its material can be copper, aluminum, titanium nitride, etc., but it differs from the material of the top conductive layer 140. The electrode connection layer 170 is used to electrically connect the grounded metal region 142 and the electrode region 141, which are isolated by the isolation structure 180.

[0027] The MEMS mechanical layer 160 is located above the top conductive layer 140. In one embodiment, the material of the MEMS mechanical layer 160 may be polycrystalline silicon, monocrystalline silicon, conductive metal, piezoelectric material, piezoresistive material, or polymer, etc.

[0028] Several anchoring structures 150 are located between the MEMS mechanical layer 160 and the top conductive layer 140, and the anchoring structures 150 provide stress support and electrical signal input / output for the MEMS mechanical layer 160. In one embodiment, the anchoring structures 150 are made of insulating materials such as silicon oxide.

[0029] Please refer to Figure 2 As shown, this is a longitudinal cross-sectional view of the MEMS-CMOS integrated structure after the MEMS mechanical layer has been completely etched and released in one embodiment of the present invention. Alternatively, it can be said that... Figure 2 Is Figure 1 Based on this, the MEMS-CMOS integrated structure is obtained by completely etching and releasing the MEMS mechanical layer 160.

[0030] After the MEMS mechanical layer 160 is completely etched and released, a MEMS pattern is formed. The MEMS pattern includes MEMS movable structures 161, a dummy layer 163, and a ground layer 162 arranged sequentially and at intervals along the surface of the MEMS mechanical layer 160. Figure 2 In the embodiment shown, the MEMS movable structure 161, the dummy layer 163 and the ground layer 162 are arranged sequentially from the middle to both sides along the surface of the MEMS mechanical layer 160.

[0031] The MEMS movable structure 161 is connected to its corresponding anchoring structure 150 below it via elastic elements (T-beams, crab-leg beams, etc.). The anchoring structure 150 is electrically connected to the CMOS integrated circuit layer 100 via the corresponding electrical connection metal area 143 in the top conductive layer 140 and the corresponding second-type circuit trace 132 in the secondary conductive layer 130. The corresponding electrical connection metal area 143 and the corresponding second-type circuit trace 132 are electrically connected via vias 120; the corresponding second-type circuit trace 132 is electrically connected to the CMOS integrated circuit layer 100 vias 120. As a sensitive element, the MEMS movable structure 161 can generate displacement, deformation, and other movements under the influence of external environmental parameters.

[0032] The ground layer 162 is connected to its corresponding anchoring structure 150 below it. The anchoring structure 150 is electrically connected via a corresponding electrical connection metal region 143 in the top conductive layer 140 and a corresponding first-type circuit trace 131 in the secondary conductive layer 130. The corresponding electrical connection metal region 143 and the corresponding first-type circuit trace 131 are electrically connected through the via connection 120. During the etching of the MEMS mechanical layer 160, the first-type circuit trace 131 is grounded, allowing the ground layer 162 and its corresponding anchoring structure 150 to act as grounding posts to release charge. After the MEMS mechanical layer 160 is completely etched, the ground layer 162 is completely separated from other mechanical structures, and the first-type circuit trace 131 remains grounded, thus placing the ground layer 162 in a grounded position.

[0033] The dummy layer 163 is connected to its corresponding anchoring structure 150 below it. The anchoring structure 150 is electrically connected to the CMOS integrated circuit layer 100 via the corresponding electrical connection metal area 143 in the top conductive layer 140 and the corresponding second-type circuit trace 132 in the secondary conductive layer 130. Specifically, the corresponding electrical connection metal area 143 and the corresponding second-type circuit trace 132 are electrically connected through the via connection 120; the corresponding second-type circuit trace 132 is electrically connected to the CMOS integrated circuit layer 100 through the via connection 120. The dummy layer 163 does not participate in the movement during the MEMS detection process. After the MEMS mechanical layer 160 is completely etched and released, it plays a role in self-testing, shielding, and limiting: When the dummy layer 163 is connected to a low level, the dummy layer 163 will generate an electrostatic force with the MEMS movable structure 161 connected to a high level. The push of the electrostatic force can determine whether the MEMS movable structure 161 is stuck, broken, or in other abnormal states; When the dummy layer 163 is connected to the same high level as the MEMS movable structure 161, it will shield the electrostatic force generated by the ground layer 162 and other mechanical structures to avoid affecting the MEMS movable structure 161. At the same time, it will limit the displacement of the MEMS movable structure 161 during its movement to prevent the MEMS movable structure 161 from undergoing large in-plane rotation or violent collision with the sidewall.

[0034] exist Figure 2 In the illustrated embodiment, after the MEMS mechanical layer 160 is completely etched and released, the electrode connection layer 170 is completely removed using other etching methods (such as wet etching), thereby severing the electrical connection between the ground metal region 142 and the electrode region 141. That is, before the MEMS mechanical layer 160 is etched, the MEMS-CMOS integrated structure also includes the electrode connection layer 170, which is located above the top conductive layer 140 to electrically connect the electrode region and the ground metal region; after the MEMS mechanical layer 170 is completely etched and released to form a MEMS pattern, the electrode connection layer 170 is removed.

[0035] exist Figure 1 and Figure 2 In the illustrated embodiment, the upper surface of the isolation structure 180 extends beyond the upper surface of the top conductive layer 140. Thus, the isolation structure 180 completely isolates the electrode region 141 from the ground metal region 142, and also restricts the displacement of the MEMS movable structure 161 during its movement, preventing it from undergoing large out-of-plane swings and colliding with the top conductive layer 140.

[0036] Please refer to Figure 3As shown, this is a top view of the MEMS pattern formed after the MEMS mechanical layer has been completely etched and released in one embodiment of the present invention. Figure 3 In the illustrated embodiment, 200 is the MEMS pattern formed after the MEMS mechanical layer is completely etched and released, with its center point at O. An XY coordinate axis is established with O as the origin. The MEMS pattern 200 is symmetrically distributed along the X-axis or Y-axis, meaning the MEMS pattern 200 has a symmetrical structure. 210 is a movable MEMS structure (which is equivalent to...). Figure 1 and Figure 2 The MEMS movable structure 161 shown is connected to the anchoring structure 211 (which is equivalent to) via an elastic element 212. Figure 1 and Figure 2 The anchoring structure 150 below the MEMS movable structure 161 is shown. The elastic element 212 can be a serpentine beam, T-beam, or other elastic structures, and the connection method depends on the motion mode of the MEMS movable structure 210 in the design scheme.

[0037] exist Figure 3 In the embodiment shown, the dummy layer 220 (which is equivalent to...) Figure 1 and Figure 2 The dummy layer 163 shown is anchored below by the structure 221 (which is equivalent to...). Figure 1 and Figure 2 The anchoring structure 150 below the dummy layer 163 shown is suspended and fixed above the CMOS integrated circuit layer 100 and connected to the CMOS integrated circuit layer 100. Ground layer 230 (which is equivalent to...) Figure 1 and Figure 2 The grounding layer 162 shown is anchored below it by an anchoring structure 231 (which is equivalent to...) Figure 1 and Figure 2 The anchoring structure 150 below the ground layer 162 shown is suspended and fixed above the CMOS integrated circuit layer 100. All anchoring structures 211, 221, and 231 are symmetrically distributed with the midpoint O of the MEMS pattern 200 as the center.

[0038] Figure 3 This is only one specific embodiment of the design scheme. In other designs, the shape of the MEMS movable structure 210 can be adjusted while ensuring symmetry along a certain coordinate axis. The number and distribution of the anchoring structures 211, 221, and 231 can be adjusted while ensuring symmetry with O as the center.

[0039] It should be noted that the MEMS mechanical layer 160 can be a mechanical structure of MEMS such as an accelerometer, gyroscope, or pressure sensor, and should not be limited to the application of a particular product.

[0040] In one embodiment, the present invention employs plasma etching, such as deep reactive etching (DRIE), to release the completed MEMS mechanical layer 160 to form a MEMS pattern.

[0041] The working principle of this invention is described in detail below:

[0042] 1. In the fabrication of MEMS chips, plasma processes are typically used to form the desired devices, such as plasma etching to etch the MEMS mechanical layer 160. However, plasma processes generate plasma charges. On one hand, charge accumulates on the MEMS mechanical layer 160; on the other hand, some of the plasma bombarding the electrode region 141 beneath the MEMS movable structure 161 also causes charge accumulation on the electrode region 141. If this charge is directly connected to the gate of the device's CMOS circuit (i.e., CMOS integrated circuit layer 100) through a conductor, and exceeds a certain amount, it will damage the gate oxide layer of the circuit, thereby severely reducing the reliability and lifespan of the device and even the entire chip. By grounding the MEMS mechanical layer 160 and the electrode region 141 below the MEMS movable structure 161 during the etching process, a low-resistance path can be provided for the charge to flow into the ground, thus avoiding damage to the CMOS circuit (i.e., the CMOS integrated circuit layer 100). After etching, the grounding circuit will be disconnected from other structures (for example, after the MEMS mechanical layer 160 is completely etched, the grounding layer 162 is completely separated from other mechanical structures; after the MEMS mechanical layer 160 is completely etched and released, the electrode connection layer 170 is completely removed by other etching methods (such as wet etching), thereby cutting off the electrical connection between the grounding metal region 142 and the electrode region 141), which does not affect the chip operation.

[0043] Alternatively, this invention employs plasma etching, such as deep reactive etching (DRIE), to release the completed MEMS mechanical layer 160 to form a MEMS pattern. In traditional processing, the bombardment of particles on the MEMS movable structure 161 and its underlying electrode region 141 during plasma etching easily leads to charge accumulation. On the one hand, this charge release process can severely damage the CMOS circuit (i.e., the CMOS integrated circuit layer 100); on the other hand, the electrostatic force generated by the charge can easily cause relative displacement between the wafer and the ESC (electrostatic chuck), resulting in process deviations. This invention establishes a grounding line, employing a scheme where the electrode region 141 and the MEMS mechanical layer 160 are grounded simultaneously. This guides the charge flow to the grounding end during etching, providing important protection.

[0044] 2. The MEMS pattern formed after the MEMS mechanical layer 160 is completely etched and released is a symmetrical structure. The purpose of this is to make the etching density distribution uniform, which helps to reduce process errors.

[0045] 3. During the packaging process of MEMS chips, processes such as dicing, heating, and molding curing will generate additional stresses, such as thermal stress, which will act on the chip substrate. The anchoring structure 150 serves as the connection between the substrate and the MEMS mechanical layer 160, and its position will have a significant impact on the stress distribution of the device. This invention symmetrically distributes all anchoring structures 150 along the center point of the MEMS pattern 200, which can make the surface hardness distribution of the substrate (or substrate base) and the stress on the chip uniform, preventing some structures from being twisted or even cracked due to excessive stress, and preventing the chip from being twisted and damaged due to asymmetrical stress distribution caused by stress during processing and packaging.

[0046] In summary, the innovative advantages of this invention are as follows:

[0047] 1. In this invention, the top electrode region 141 and the MEMS mechanical layer 160 are kept grounded during plasma etching to avoid process damage caused by charge accumulation.

[0048] 2. In terms of layout, the MEMS pattern of this invention is a symmetrical pattern, and all anchoring structures 150 are symmetrically distributed along the center point of the MEMS pattern, which reduces process error and prevents stress torsion deformation damage.

[0049] According to another aspect of the present invention, a method for manufacturing a MEMS-CMOS integrated structure is provided, comprising:

[0050] Provides a MEMS-CMOS integrated structure without etched MEMS mechanical layers, wherein the MEMS-CMOS integrated structure without etched MEMS mechanical layers is as follows: Figure 1 As shown;

[0051] The MEMS mechanical layer 160 in the MEMS-CMOS integrated structure is etched and released, wherein the etched MEMS-CMOS integrated structure is as follows: Figure 2 As shown. The specific method can be found above, and will not be repeated here.

[0052] In one embodiment, the method for manufacturing a MEMS-CMOS integrated structure provided by the present invention further includes:

[0053] After etching and releasing the MEMS mechanical layer, the electrode connection layer 170 is removed. The electrode connection layer 170 is located above the top conductive layer 140 to electrically connect the ground metal region 142 and the electrode region 141.

[0054] In this invention, terms such as “connection,” “linked,” “connected,” and “joined” that indicate electrical connection, unless otherwise specified, indicate direct or indirect electrical connection.

[0055] The above description is only a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiments. Any equivalent modifications or changes made by those skilled in the art based on the disclosure of the present invention should be included within the scope of protection set forth in the claims.

Claims

1. A MEMS-CMOS integrated structure, characterized in that, It includes: CMOS integrated circuit layer; A top conductive layer is located above the CMOS integrated circuit layer. The top conductive layer includes electrode regions, ground metal regions, and electrical connection metal regions arranged at intervals. An isolation structure, which is on the same layer as the top conductive layer, is made of insulating material to isolate the electrode area from the grounded metal area; A MEMS mechanical layer is located above the top conductive layer. After the MEMS mechanical layer is completely etched and released, a MEMS pattern is formed. The MEMS pattern includes mutually spaced MEMS movable structures, a dummy layer, and a ground layer. The electrode region is located below the movable MEMS structure and is used to sense electrical signals generated by deformation or displacement of the movable MEMS structure. The electrode region is electrically connected to the CMOS integrated circuit layer. The ground metal region is used to ground the electrode region during the etching of the MEMS mechanical layer. The ground metal region is not electrically connected to the electrode region after the MEMS mechanical layer is completely etched and released to form the MEMS pattern. The ground layer is used to ground the MEMS mechanical layer during etching, and the ground layer is completely separated from other parts of the MEMS mechanical layer after the MEMS mechanical layer is completely etched and released to form a MEMS pattern; the MEMS movable structure is electrically connected to the CMOS integrated circuit layer via the corresponding electrical connection metal region. Before the MEMS mechanical layer is etched, the MEMS-CMOS integrated structure also includes an electrode connection layer, which is located above the top conductive layer to electrically connect the ground metal region and the electrode region; After the MEMS mechanical layer is completely etched and released to form the MEMS pattern, the electrode connectivity layer is removed. The virtual layer is located between the MEMS movable structure and the ground layer; The virtual layer is spaced apart from the MEMS movable structure and the ground layer; The virtual layer is electrically connected to the CMOS integrated circuit layer via the corresponding electrical connection metal region. After the MEMS mechanical layer is completely etched and released to form a MEMS pattern When the dummy layer is connected to a low level, the dummy layer will generate an electrostatic force with the MEMS movable structure connected to a high level. The presence of an abnormal state of the MEMS movable structure can be determined by the pushing force of the electrostatic force. When the dummy layer is connected to the same high level as the MEMS movable structure, it will shield the electrostatic force generated by other mechanical structures of the MEMS mechanical layer, avoiding its influence on the MEMS movable structure. At the same time, it will limit the displacement of the MEMS movable structure during its movement, preventing the MEMS movable structure from undergoing large in-plane rotation or violent collision with the sidewall.

2. The MEMS-CMOS integrated structure according to claim 1, characterized in that, It also includes several anchoring structures. The anchoring structures are located between the MEMS mechanical layer and the top conductive layer, and the anchoring structures provide stress support and electrical signal input / output for the MEMS mechanical layer.

3. The MEMS-CMOS integrated structure according to claim 2, characterized in that, It also includes a secondary conductivity layer, which is located between the CMOS integrated circuit layer and the top conductivity layer. The secondary conductivity layer includes first-type circuit traces and second-type circuit traces. Specifically, the electrode region is electrically connected to the CMOS integrated circuit layer via the corresponding second-type circuit trace below it; the ground metal region is electrically connected to the corresponding first-type circuit trace below it; the MEMS movable structure is connected to the corresponding anchoring structure below it via an elastic element, and the anchoring structure is electrically connected to the CMOS integrated circuit layer via the corresponding electrical connection metal region below it and the corresponding second-type circuit trace; the ground layer is connected to the corresponding anchoring structure below it, and the anchoring structure is electrically connected via the corresponding electrical connection metal region below it and the corresponding first-type circuit trace; the dummy layer is connected to the corresponding anchoring structure below it, and the anchoring structure is electrically connected to the CMOS integrated circuit layer via the corresponding electrical connection metal region below it and the corresponding second-type circuit trace.

4. The MEMS-CMOS integrated structure according to claim 3, characterized in that, During the etching of the MEMS mechanical layer, the first type of circuit trace is grounded so that the ground metal region grounds the electrode region and the ground layer grounds the MEMS mechanical layer.

5. The MEMS-CMOS integrated structure according to claim 3, characterized in that, An insulating layer is located between the top conductive layer and the secondary conductive layer, between the CMOS integrated circuit layer and the secondary conductive layer, and between different lines of the secondary conductive layer; Through-hole connections, located between different layers, serve as electrical connections.

6. The MEMS-CMOS integrated structure according to claim 1, characterized in that, The upper surface of the isolation structure extends beyond the upper surface of the top conductive layer. The isolation structure restricts the displacement of the MEMS movable structure during its movement, preventing the MEMS movable structure from swinging out of plane and colliding with the top conductive layer.

7. The MEMS-CMOS integrated structure according to claim 2, characterized in that, The MEMS pattern has a symmetrical structure; All of the anchoring structures are symmetrically distributed along the center point of the MEMS pattern; The etching process for the MEMS mechanical layer is plasma etching.

8. A method for manufacturing a MEMS-CMOS integrated structure as described in any one of claims 1-7, characterized in that, It includes: Provides a MEMS-CMOS integrated structure without etched MEMS mechanical layers; The MEMS mechanical layer in the MEMS-CMOS integrated structure is etched and released.

9. The method for manufacturing a MEMS-CMOS integrated structure according to claim 1, characterized in that, It also includes: After etching and releasing the MEMS mechanical layer, the electrode connection layer is removed. The electrode connection layer is located above the top conductive layer to electrically connect the ground metal region and the electrode region.

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