An ultrathin VC heat sink with involute etched channels and its design method

Abstract

This invention provides an ultra-thin VC vapor chamber with involute etched channels and its design method. The ultra-thin VC vapor chamber has at least one cooling unit with involute etched channels on its lower cover plate. Each cooling unit includes an initial liquid reservoir, multiple involute etched channels connected to the initial liquid reservoir, and multiple equilibrium temperature liquid reservoirs disposed on the involute etched channels. This invention does not use capillary copper mesh. Instead, it employs an involute method on the lower cover plate of the VC vapor chamber, and sets up structures such as coolant phase change outflow channels, phase change reflux channels, initial liquid reservoirs, and equilibrium temperature liquid reservoirs according to the location, shape, and operating temperature of the heat-generating components. This improves heat dissipation efficiency by 25-30%, controls the temperature difference of the heat-generating surfaces within 1-3 degrees Celsius, effectively stabilizes the operating environment of the heat-generating components, and improves operating efficiency.

Description

Technical Field

[0001] This invention relates to the field of precision etching technology, and in particular to an ultrathin VC heat sink with involute etch channels and its design method. Background Technology

[0002] With the advancement of 5G and the diversification and high performance of 5G mobile terminals such as tablets and smartphones, the performance of electronic components such as CPUs, PCBs, and batteries in mobile phones is becoming increasingly powerful. However, the increasing integration and assembly density lead to a sharp increase in power consumption and heat generation, thus creating a strong demand for rapid heat dissipation. The temperature control range for electronic components such as CPUs, PCBs, and batteries in electronic products is generally as follows: the temperature should not exceed 30 degrees Celsius above the room temperature. That is, if the room temperature is 20 degrees Celsius, the temperature of electronic components such as CPUs, PCBs, and batteries should ideally not exceed 50 degrees Celsius. Exceeding these temperatures can, at best, affect the device's operating speed, and at worst, cause the device to restart or crash. Prolonged operation under excessively high temperatures will severely impact the device's lifespan and result in a poor user experience.

[0003] Currently, VC (Vacuum Coil) heat sinks are widely used for heat dissipation and temperature control of electronic components such as CPUs, PCBs, and batteries. The industry typically employs an etching process to create vacuum chambers on two copper alloy sheets. Then, a 200-250 mesh capillary copper mesh is welded and fixed into the chambers using resistance welding. The copper sheets are then welded together, and the process involves vacuuming, adding coolant, secondary degassing, and spot welding at the head to complete the manufacturing of the VC heat sink.

[0004] like Figure 1 As shown, the existing VC heat sink mainly consists of three components: an upper cover plate 1' serving as the heat dissipation surface, a lower cover plate 2' which contacts the heat-generating electronic components, and a 200-250 mesh capillary copper mesh 3' with a thickness of approximately 0.1 mm placed in the middle of a semi-etched coolant reservoir 6' on the lower cover plate 2'. The lower cover plate 2' also has a coolant filling port 4' and an exhaust port 5' at one end. The side of the lower cover plate 2' opposite to the upper cover plate 1' is the welding surface 7', and the components are welded together using a brazing process.

[0005] The above methods cannot further reduce the volume, thickness, and weight of the VC heat exchanger, which is not conducive to the miniaturization and weight reduction of the VC heat exchanger; using a 200-250 mesh capillary copper mesh as a coolant reservoir involves complex processing steps and high costs; the temperature difference between the heating surfaces is 5-10 degrees Celsius, which is difficult to further reduce and cannot further improve the user experience.

[0006] To address the aforementioned issues, it is necessary to provide a novel VC heat spreader structure. This structure aims to reduce costs by avoiding the use of capillary copper mesh and improve heat dissipation efficiency, thereby further reducing the temperature difference between the heat-generating surfaces. Summary of the Invention

[0007] To address the aforementioned technical problems, this invention provides an ultra-thin VC vapor chamber with involute etched channels and its design method. This invention does not use capillary copper mesh; instead, it employs an involute method on the lower cover plate of the VC vapor chamber. Based on the location, shape, and operating temperature of the heat-generating components, it designs structures such as coolant phase change outflow channels, phase change return channels, initial reservoirs, and equilibrium temperature reservoirs. The initial reservoir, involute etched channels, edge reservoirs, and equilibrium temperature reservoirs described below all utilize a semi-etching process. This invention can improve heat dissipation efficiency by 25-30%, control the temperature difference of the heat-generating surface within 1-3 degrees Celsius, effectively stabilize the operating environment of the heat-generating components, and improve operating efficiency.

[0008] The technical means employed in this invention are as follows:

[0009] An ultra-thin VC heat exchanger with involute etched channels is characterized in that at least one cooling unit with involute etched channels is provided on the lower cover plate of the VC heat exchanger, the cooling unit including an initial liquid storage tank, multiple involute etched channels connected to the initial liquid storage tank, and multiple equilibrium temperature liquid storage tanks provided on the involute etched channels.

[0010] Furthermore, the initial liquid storage tank is located at the same position as the high-temperature zone of the electronic components.

[0011] Furthermore, the involute etching channel is set as an n-equal involute along the circumference of the initial liquid storage tank diameter.

[0012] Furthermore, the equilibrium temperature storage tank is located at the node position of the n equally divided involute.

[0013] Furthermore, the structure of the involute etched channel is one or a combination of one or more of the following: equal width, gradually narrowing, or gradually widening.

[0014] Furthermore, the total number of involute etched channels in the cooling unit is N (N can be an odd or even number, and N is an integer), satisfying: N = number of coolant phase change outflow channels N 出 +Number of coolant phase change reflux channels N 回 +Number of channels connecting adjacent cooling units N 连 Wherein, when there is one cooling unit, the number N of channels connecting adjacent cooling units is... 连 =0.

[0015] Furthermore, the involute etching channels connecting adjacent cooling units have a structure of equal width.

[0016] Furthermore, taking a cooling unit located at the same position as the high-temperature zone of the electronic components as the core cooling unit, the number N of coolant phase change outflow channels in the involute etched channels of the core cooling unit is as follows: 出 = n * number of coolant phase change reflux channels N 回 Number of coolant phase change reflux channels N 回 ≥1, n≥1; The outward ends of both the coolant phase change outflow channel and the coolant phase change return channel are connected to the edge coolant reservoir, which is used to allow coolant to flow out of the initial reservoir or return coolant from the edge coolant reservoir.

[0017] To further illustrate, regardless of whether the number of cooling units is odd or even, the number of coolant phase change outflow channels and coolant phase change return channels all satisfy the above formula.

[0018] For example: when the number of cooling units = 1, the total number of etching channels N ≥ 3, (the number of channels connecting adjacent cooling units N) 连 =0), n≥2; when n=2, the total number of etching channels N=3, the number of coolant phase change return channels N 回 When = 1, the number N of coolant phase change outflow channels 出 =2.

[0019] For example: when the number of cooling units is ≥2 and n=1, select the number of cooling units = 2, and the number of coolant phase change outflow channels N. 出 =Number of coolant phase change reflux channels N 回 When the value is 1, the number of channels N connecting other cooling zones can be calculated based on the total number of etching channels N (which is a known condition). 连 .

[0020] Furthermore, the involute etched channels that serve as coolant phase change outflow channels have a gradually widening structure, with the channel being wider closer to the edge of the coolant reservoir; the involute etched channels that serve as coolant phase change return channels have a gradually narrowing structure, with the channel being wider closer to the initial reservoir.

[0021] Furthermore, a coolant circulation flow rate regulating port is provided next to the inlet of the coolant phase change reflux channel.

[0022] Furthermore, the diameter of the equilibrium temperature storage tank is 1.5 to 2 times the width of the corresponding etched channel.

[0023] Furthermore, when the structure of the involute etching channel is gradually narrowing or gradually widening, the width of the widest part of the etching channel is 2 to 3 times that of the narrowest part.

[0024] Furthermore, the VC heat exchanger also includes an upper cover plate of the VC heat exchanger that is welded and fixed to the lower cover plate of the VC heat exchanger, and the surface of the upper cover plate of the VC heat exchanger is provided with a corrugated channel for increasing the heat dissipation area.

[0025] This invention also discloses a design method for an ultrathin VC heat sink with involute etched channels, characterized by the following steps:

[0026] S1. Calculate the diameter D of the initial circular liquid storage tank using the radius r = πD of the low-temperature zone of the electronic components.

[0027] S2. Based on the diameter D of the initial liquid storage tank, design at least one cooling unit with involute etched grooves on the lower cover plate of the VC heat exchanger.

[0028] S3. When designing multiple cooling units, the core cooling unit corresponds to the high-temperature area of ​​the electronic components. The initial liquid storage tanks of adjacent cooling units are connected by involute etching channels of equal width. The number of connected etching channels is designed according to the temperature control requirements of the electronic components and the surface temperature difference requirements of the heat dissipation surface.

[0029] S4. The involute etched channels flowing into the edge coolant reservoir gradually widen, while the involute etched channels flowing back to the initial reservoir gradually narrow. The number of etched channels is designed according to the temperature control requirements of electronic components and the surface temperature difference requirements of the heat dissipation surface.

[0030] S5. Each involute etched channel has a number of equilibrium temperature storage tanks.

[0031] S6. A coolant circulation flow regulating port is set next to the involute etched channel of the initial liquid storage tank that returns to the core cooling unit; S7. The upper cover plate of the VC heat exchanger is etched into a wave shape and welded to the lower cover plate of the VC heat exchanger.

[0032] The present invention has the following advantages:

[0033] The VC heat spreader structure and design method of this invention can further reduce the volume, thickness, and weight of the VC heat spreader, enabling it to develop towards miniaturization and lightweighting. Without using a 200-250 mesh capillary copper mesh as the coolant reservoir, it employs an involute etching channel design method. Based on the location, shape, and operating temperature of the heat-generating components, it designs coolant phase change outflow channels, phase change reflux channels, initial reservoirs, equilibrium temperature reservoirs, and edge coolant reservoirs. This invention places the initial reservoir at the same location within the high-temperature zone of the electronic components (e.g., ...). Figure 2 As shown, the coolant is forced to flow from the high-temperature zone to the low-temperature zone, and the flow direction is determined, which improves the heat dissipation efficiency by 25-30%. The temperature difference of the heating surface is controlled within 1-3 degrees, and the total product thickness is reduced from 0.3-0.4mm to ≤0.2mm, further improving the user experience.

[0034] This invention can effectively stabilize the operating environment of heat dissipation components and improve operating efficiency; at the same time, it reduces the complexity and high cost of VC heat sink processing.

[0035] Based on the above reasons, this invention can be widely applied in the field of precision etching. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of a VC heat exchanger assembly in the prior art.

[0038] Figure 2 This is a schematic diagram of the temperature range of a heat-generating electronic component.

[0039] Figure 3 This is a schematic diagram of the involute etching channel design of the present invention.

[0040] Figure 4 This is a schematic diagram of the gradually widening involute etching channel of the present invention.

[0041] Figure 5 This is a schematic diagram of the gradually narrowing involute etching channel of the present invention.

[0042] Figure 6 This is a schematic diagram of the involute equal-width etching channel of the present invention.

[0043] Figure 7 This is a schematic diagram of the top cover plate of the VC heat spreader plate of the present invention.

[0044] Figure 8 This is a schematic diagram of the coolant circulation flow adjustment port on the lower cover of the VC heat exchanger plate of the present invention.

[0045] Figure 9 This is a schematic diagram of the lower cover plate of the VC heat sink with involute etched channels according to the present invention.

[0046] Figure 10 This is a schematic diagram of the liquid storage tank at the edge of the lower cover plate of the VC heat spreader of the present invention.

[0047] Figure 11 This is a schematic diagram of the VC heat spreader assembly of the present invention.

[0048] In the diagram: 1', Existing VC heat exchanger top cover; 2', Existing VC heat exchanger bottom cover; 3', Capillary copper mesh; 4', Coolant filling port; 5', Exhaust port; 6', Semi-etched coolant reservoir; 7', Welding surface;

[0049] 1. Upper cover of VC heat exchanger plate; 2. Lower cover of VC heat exchanger plate; 3. Coolant filling port; 4. Exhaust port; 5. Coolant circulation flow regulating port; 6. Welding surface; 7. Initial reservoir I; 8. Involute etched channel; 9. Balance temperature reservoir; 10. Initial reservoir II; 11. Initial reservoir III; 12. Coolant phase change outflow channel; 13. Coolant phase change reflux channel; 14. High temperature zone; 15. Medium-high temperature zone; 16. Low temperature zone; 17. Edge coolant reservoir;

[0050] A. Cooling Unit I; B. Cooling Unit II; C. Cooling Unit III; D. Etching Channel Connecting Area I (Etching Channels 1# to 5#); E. Etching Channel Connecting Area II (Etching Channels 7# to 11#); F. Coolant Flow Direction. Detailed Implementation

[0051] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0052] like Figure 9 As shown, this invention is illustrated using an example of setting three cooling units on the lower cover plate 2 of a VC heat exchanger. The upper end of the lower cover plate 2 of the VC heat exchanger is provided with a coolant filling port 3 and an exhaust port 4. The end face of the lower cover plate is a welding surface 6 (the surface without etching). Cooling units and an edge coolant reservoir 17 for receiving coolant are provided in the main body of the lower cover plate (e.g.,...). Figure 10 As shown, this is the structural form that appears after the cooling unit is configured.

[0053] Based on the location, shape, and operating temperature of the heat-generating electronic components, design the initial diameter of the liquid storage tank, as shown in the attached figure. Figure 2 The diagram shows the temperature range of the heat-generating electronic components. The high-temperature zone 14 is between 50 and 60°C, the medium-high temperature zone 15 is between 40 and 50°C, and the low-temperature zone 16 is between 35 and 40°C.

[0054] For example (e.g.) Figure 3As shown):

[0055] 1. Calculate the diameter D of the initial circular storage tank using the radius r = πD of the low-temperature zone;

[0056] 2. The circular initial liquid storage tank is located at the same position as the high-temperature area of ​​the electronic components;

[0057] 3. Based on the initial diameter D of the storage tank, design the involute etching channel size pattern using the 12-part method (not limited to the 12-part method; the more parts, the more accurate the involute).

[0058] Specifically, the circumference is divided into several equal parts (12 parts in this embodiment), and the circumference πD is divided into the same number of parts. Tangents to the circle are drawn through each of the division points on the circumference. On the first tangent, one part of the circumference (πD / 12) is measured from the point of tangency to obtain point 1. On the second tangent, two parts of the circumference (2xπD / 12) are measured from the point of tangency to obtain point 2. Points 3, 4, ..., 12 are obtained by similar process. Points 1, 2, 3, ..., 12 are smoothly connected using a curve plate to obtain the involute of the circle.

[0059] like Figure 4 As shown, when the coolant is heated and vaporized, it flows from the initial circular reservoir I7 to the edge coolant reservoir 17, and the involute etched channel 8 gradually widens; the circular equilibrium temperature reservoir 9 is located at the nodes of the involute 12, and its diameter is 1.5 to 2 times the width of the etched channel at the corresponding position. It is a key structural form for further uniform and balanced heat dissipation, where F is the direction of coolant flow.

[0060] like Figure 5 As shown, the coolant liquefies and flows from the edge coolant reservoir 17 to the circular initial reservoir I7, and the involute etched channel 8 gradually widens; the circular equilibrium temperature reservoir 9 is located at the nodes of the involute 12 equally divided, and its diameter is 1.5 to 2 times the width of the etched channel at the corresponding position. It is a key structural form for further uniform and balanced heat dissipation.

[0061] like Figure 6 As shown, the coolant vaporizes upon heating and flows from the circular initial reservoir I7 to the circular initial reservoir II10 and initial reservoir III11, while the width of the involute etched channel 8 remains unchanged. The circular equilibrium temperature reservoir 9, located at the nodes of the involute 12 equally divided sections, has a diameter 1.5 to 2 times the width of the corresponding etched channel, making it a key structural form for further uniform and balanced heat dissipation.

[0062] like Figure 9 As shown, a circular initial liquid storage tank is used as the base circle. Twelve involute etched grooves are evenly distributed on the base circle to form a cooling unit. Three cooling units are etched on the surface of the lower cover plate 2 of the VC heat exchanger, as shown below. Figure 10As shown, this is the edge coolant reservoir 17.

[0063] To ensure rapid cooling across the entire cooling zone and maintain a temperature difference within the 1-3°C range, cooling unit IA (the core cooling zone) is located at the same position as the high-temperature zone of the electronic components. Cooling units IIB and IIIC are situated adjacent to each other on either side of cooling unit IA (Note: In this example, the core cooling unit has a higher temperature than the other two units; the initial diameter "D" of the storage tanks I, II, and III is calculated separately for each cooling unit). In core cooling zone I, the total number of etched channels N equals the number of coolant phase change outflow channels N. 出 +Number of coolant phase change reflux channels N 回 +Number of channels connecting adjacent cooling units N 连 .

[0064] Cooling unit IA is connected to cooling units IIB and IIIC by five involute etched channels, meaning that N is the number of channels connecting adjacent cooling units. 连 =5 (i.e., etching channel connecting area IDE and etching channel connecting area IIE, etching channels 1# to 5# and etching channels 7# to 11#), the width of the etching channel remains unchanged, and the coolant in the initial liquid storage tank Ⅰ7 flows to the initial liquid storage tank Ⅱ10 and the initial liquid storage tank Ⅲ11 respectively, in order to achieve a uniform temperature balance of the entire heating components.

[0065] N in cooling unit IA 出 =1, meaning there is a coolant phase change outflow channel 12 directly connected to the edge coolant reservoir 17 (6# etching channel). The closer to the edge coolant reservoir 17, the wider the involute etching channel; N in cooling unit IA 回 =1, that is, there is a coolant phase change return channel 13 connected to the edge coolant reservoir 17 (12# etching channel), which serves as a connecting channel for return to the initial reservoir Ⅰ7. The closer to the initial reservoir, the wider the involute etching channel becomes, with the widest part being 2 to 3 times the narrowest part.

[0066] The remaining 7 involute heat dissipation etched channel outlets of cooling units IIB and IIIC are all directly connected to the edge coolant reservoir 17, i.e., the number N of coolant phase change outflow channels. 出 =7. The closer to the edge of the coolant reservoir 17, the wider the involute etched grooves become, with the widest part being 2 to 3 times the narrowest part.

[0067] The coolant in the initial storage tank I7, initial storage tank II10, and initial storage tank III11 is heated and vaporized. After passing through the etching channel and the equilibrium temperature storage tank, it is gradually cooled and liquefied, and enters the coolant edge storage tank 17 to mix, forming a liquefied coolant with a uniform temperature. Then, it flows back to the initial storage tank I7 through the coolant phase change return channel 13.

[0068] In this embodiment, the coolant pressure relationship between the initial reservoir I7, initial reservoir II10, initial reservoir III11 and coolant edge reservoir 17 is: initial reservoir I7 > initial reservoir II10, initial reservoir III11 > coolant edge reservoir 17. There is a coolant circulation flow regulating port 5 next to the inlet of the coolant phase change return channel 13 (which increases the coolant pressure returning to the initial reservoir I7 while ensuring normal circulation of coolant in the edge coolant reservoir 17).

[0069] Furthermore, the structure of the coolant circulation flow regulating port 5 can be a straight channel (e.g., Figure 9 As shown), or in the form of a channel that gradually increases in size along the direction of coolant flow (e.g. Figure 8 As shown), the width ratio of the small end to the large end is 1:2 to 3, designed according to the pressure adjustment needs, and serves as a relay pressurization function.

[0070] Furthermore, the working process of the VC heat sink fabricated using the involute etching channel design method of the present invention will be described.

[0071] Regarding the processing of VC heat spreaders:

[0072] like Figure 11 The diagram shown is a schematic of the assembly of the present invention. During processing, the involute etching groove of the lower cover plate and the wavy heat dissipation surface of the upper cover plate are etched. The upper and lower cover plates are welded together by atomic diffusion welding. Vacuuming and adding coolant are performed. Secondary degassing is performed. The liquid injection port and exhaust port are welded to complete the manufacturing of the VC heat sink.

[0073] Both the upper cover plate 1 and the lower cover plate 2 of the VC heat spreader can be made of copper alloy material with a thickness of t = 0.08-0.1mm, reducing the total thickness of the VC heat spreader to 0.16-0.2mm, a reduction of 40%-60% from the original 0.3-0.4mm; 200-250 mesh capillary copper mesh is not used, and the upper cover plate 1 of the VC heat spreader is etched into a wavy shape (e.g., Figure 7 As shown in the figure, while increasing the heat dissipation area and enhancing the heat dissipation effect, the weight is effectively reduced, resulting in an overall weight reduction of more than 30%.

[0074] Working principle of VC heat spreader:

[0075] like Figure 9As shown, in the high-temperature zone of the initial reservoir I7, the coolant vaporizes due to heat, increasing its pressure. It flows through the involute etching channels of equal width (1#~5#, 7#~11#) to the initial reservoir II10 and initial reservoir III11. It then flows through the remaining seven involute etching channels of each of the initial reservoirs II10 and III11, gradually widening, towards the edge coolant reservoir 17. At this point, the coolant cools and liquefies, increasing the pressure within the edge coolant reservoir 17. If the temperature in the high-temperature zone of the initial reservoir I7 is too high, the coolant can directly vaporize and flow into the edge coolant reservoir 17 through the outlet of the involute etching channel #6 (which gradually widens). Conversely, if the temperature in the high-temperature zone of the initial reservoir I7 is insufficient for direct vaporization, the coolant can also flow into the edge coolant reservoir 17 in liquefied form from the outlet of the involute etching channel #6.

[0076] The liquefied coolant in the edge coolant reservoir 17 flows back to the initial reservoir I7 through the 12# involute gradually narrowing etching channel. Next to the inlet of the 12# involute gradually narrowing etching channel, there is a coolant circulation flow regulating port 5, which increases the coolant pressure returning to the initial reservoir I7 while ensuring normal circulation of coolant in the edge coolant reservoir 17. The involute etching channels between the initial reservoir I7 and the initial reservoirs II10 and III11, between the initial reservoirs II10 and III11 and the edge coolant reservoir 17, and between the initial reservoir I7 and the edge coolant reservoir 17 are respectively of equal width, gradually widening, and gradually narrowing etching channel structures, which can be adjusted according to the actual temperature control requirements of electronic components.

[0077] Each involute etched channel has 12 circular temperature-balancing reservoirs 9, with a width 1.5 to 2 times that of the etched channel. These reservoirs are used to balance local temperature differences, forming a temporary reservoir for better isothermal performance (temperature uniformity). Specifically, there are four scenarios:

[0078] ①The vaporized coolant flows through the high-temperature zone, balances the temperature of the high-temperature zone through heat conduction, and then flows into the edge coolant reservoir.

[0079] ②The vaporized coolant flows through the low-temperature zone, where it releases heat and then liquefies, carrying away the heat before flowing into the edge coolant reservoir.

[0080] ③ The liquefied coolant flows through the high-temperature zone, and the heat of the high-temperature zone is carried away by the vaporization of the coolant, and then flows into the edge coolant storage tank.

[0081] ④ The liquefied coolant flows through the low-temperature zone, balances the temperature of the low-temperature zone through heat conduction, and then flows into the edge coolant reservoir.

[0082] In summary, this invention utilizes the pressure difference between the vaporization of coolant in the initial reservoir and the liquefaction of coolant in the edge reservoir to propel coolant from the high-temperature region of the initial reservoir to the edge reservoir via etched channels of equal width, gradually narrowing, and gradually widening. The coolant then flows back to the initial reservoir I through the No. 12 return inlet. To ensure the pressure required for rapid coolant circulation, a coolant circulation flow regulating port is designed next to the No. 12 return inlet to increase the coolant pressure returning to the initial reservoir I, while simultaneously ensuring normal and rapid circulation of coolant in the edge reservoir. The number of involute etched channels, the number of direct outflow channels, the number of direct return channels, and the number of connecting channels between different initial reservoirs can be specifically designed according to the product's temperature control and surface temperature difference control requirements.

[0083] The above embodiments are merely preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. An ultrathin VC heat spreader with involute etched channels, characterized in that, At least one cooling unit with involute etched channels is provided on the lower cover plate of the VC heat sink. The cooling unit includes an initial liquid storage tank, multiple involute etched channels connected to the initial liquid storage tank, and multiple equilibrium temperature liquid storage tanks provided on the involute etched channels. The position of the initial liquid storage tank is the same as that of the high temperature zone of the electronic components. The involute etched channel includes a coolant phase change outflow channel and a coolant phase change return channel. The coolant phase change outflow channel has a gradually widening structure, and the channel is wider closer to the edge of the coolant reservoir. The coolant phase change return channel has a gradually narrowing structure, and the channel is wider closer to the initial reservoir. The total number of involute etched channels in the cooling unit is N, satisfying: N = number of coolant phase change outflow channels N 出 +Number of coolant phase change reflux channels N 回 +Number of channels connecting adjacent cooling units N 连 Wherein, when there is one cooling unit, the number N of channels connecting adjacent cooling units is... 连 =0.

2. The ultrathin VC heat spreader with involute etched channels according to claim 1, characterized in that, The involute etching channels are set as n equal parts along the circumference of the initial liquid storage tank diameter.

3. The ultrathin VC heat spreader with involute etched channels according to claim 2, characterized in that, The equilibrium temperature storage tank is located at the node position of the n equally divided involute.

4. The ultrathin VC heat sink with involute etched channels according to claim 1, characterized in that, The involute etching channels connecting adjacent cooling units have a structure of equal width.

5. The ultrathin VC heat spreader with involute etched channels according to claim 4, characterized in that, The core cooling unit is a cooling unit located at the same position as the high-temperature zone of the electronic components. The core cooling unit has N involute etched channels for coolant phase change outflow. 出 =n * Number of coolant phase change reflux channels N 回 Number of coolant phase change reflux channels N 回 ≥1, n≥1; The outward ends of both the coolant phase change outflow channel and the coolant phase change return channel are connected to the edge coolant reservoir, which is used to allow coolant to flow out of the initial reservoir or return coolant from the edge coolant reservoir.

6. The ultrathin VC heat spreader with involute etched channels according to claim 1, characterized in that, A coolant circulation flow rate regulating port is provided next to the inlet of the coolant phase change reflux channel.

7. A design method for an ultrathin VC heat sink with involute etched channels, characterized in that... Includes the following steps: S1. Calculate the diameter D of the initial circular liquid storage tank using the radius r=πD of the low-temperature zone of the electronic components. S2. Based on the diameter D of the initial liquid storage tank, design at least one cooling unit with involute etched grooves on the lower cover plate of the VC heat exchanger. S3. When designing multiple cooling units, the core cooling unit corresponds to the high-temperature area of ​​the electronic components. The initial liquid storage tanks of adjacent cooling units are connected by involute etching channels of equal width. The number of connected etching channels is designed according to the temperature control requirements of the electronic components and the surface temperature difference requirements of the heat dissipation surface. S4. The involute etched channels flowing into the edge coolant reservoir gradually widen, while the involute etched channels flowing back to the initial reservoir gradually narrow. The number of etched channels is designed according to the temperature control requirements of electronic components and the surface temperature difference requirements of the heat dissipation surface. S5. Each involute etched channel has a number of equilibrium temperature storage tanks. S6. A coolant circulation flow rate regulating port is set next to the involute etched channel return inlet of the initial reservoir of the core cooling unit. The upper cover of the S7 and VC heat exchanger plates is etched into a wavy shape and welded to the lower cover of the VC heat exchanger plate.

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