DC Test System for Compound Semiconductor Devices Based on EMMI

Abstract

The present invention discloses a direct current test system for compound semiconductor devices based on EMMI, including a test fixture, a source direct current power supply, a gate direct current power supply, a drain direct current power supply and an EMMI platform; the compound semiconductor device is assembled in the test fixture, and the EMMI platform collects background noise signals of the compound semiconductor device without power; then the source, gate and drain direct current power supplies are used to make the compound semiconductor device in different working states through the test fixture, and at the same time, the EMMI platform collects optical signals of the compound semiconductor device, and deducts the background noise signal, generates an EMMI analysis diagram of the compound semiconductor device in the working state, and analyzes whether the compound semiconductor device fails, and locates the failure part of the failed compound semiconductor device according to the EMMI analysis diagram. The present invention innovatively combines the direct current working state of the device with the principle of electroluminescence to realize the test of the compound semiconductor device.

Description

Technical Field

[0001] The invention belongs to the technical field of compound power semiconductors. Background Art

[0002] Wide bandgap compound semiconductor materials have the characteristics of large bandgap width, high breakdown voltage, fast electron drift velocity and strong radiation resistance. The devices have the characteristics of high temperature resistance, high voltage resistance, good high frequency and high power.

[0003] In actual applications, solid-state microwave devices may experience uneven power distribution, degradation, failure, or even burning due to factors such as poor device matching, input voltage overshoot, input overexcitation, and test environment mismatch. Accurately locating these problems is a prerequisite for determining the cause of device mismatch, failure mechanism, and proposing improvement measures. Currently, failure location analysis is usually a reverse analysis process, that is, first expose the failure, and then combine different non-destructive and destructive failure analysis techniques to reversely trace the origin of the failure and locate the failure. The process is long, the workload is large, and it may not be possible to obtain accurate conclusions. Summary of the invention

[0004] Purpose of the invention: In order to solve the problems existing in the above-mentioned prior art, the present invention provides a DC test system for compound semiconductor devices based on EMMI.

[0005] Technical solution: The present invention provides a DC test system for compound semiconductor devices based on EMMI, including a test fixture, a source DC power supply, a gate DC power supply, a drain DC power supply and an EMMI platform;

[0006] The compound semiconductor device is assembled in a test fixture, and the EMMI platform collects the background noise signal of the compound semiconductor device when the compound semiconductor device is not powered; then a source DC power supply, a gate DC power supply and a drain DC power supply are used to put the compound semiconductor device in different working states through the test fixture; the EMMI platform collects the optical signal of the compound semiconductor device in different working states, and deducts the background noise signal to generate an EMMI analysis diagram of the compound semiconductor device in the working state, and the staff analyzes whether the compound semiconductor device fails according to the EMMI analysis diagram, and locates the failure part of the failed compound semiconductor device according to the EMMI analysis diagram; the different working states include a source-gate powered working state, a gate-drain powered working state and a and a working state in which the source-gate-drain are all powered; a source DC power supply and a gate DC power supply are respectively connected to the source and gate of the compound semiconductor device through a clamp to provide a DC excitation power supply for the compound semiconductor device so that the compound semiconductor is in a source-gate powered working state; a gate DC power supply and a drain DC power supply are respectively connected to the gate and drain of the compound semiconductor device through a clamp to provide a DC excitation power supply for the compound semiconductor device so that the compound semiconductor is in a gate-drain powered working state; a source DC power supply, a gate DC power supply and a drain DC power supply are respectively connected to the source, gate and drain of the compound semiconductor device through a clamp to provide a DC excitation power supply for the compound semiconductor device so that the compound semiconductor is in a gate-drain powered working state.

[0007] Furthermore, when the compound semiconductor device is in a source-gate powered working state, the gate-source voltage Vgs is a positive voltage or a negative voltage; when Vgs is a positive voltage, Vgs is less than a preset maximum voltage, and when Vgs is a negative voltage, Vgs is less than the gate-source breakdown voltage Vbgs.

[0008] Furthermore, when the compound semiconductor device is in a gate-drain powered working state, the gate-drain voltage Vgd is a positive voltage or a negative voltage; when Vgd is a positive voltage, Vgd is less than a preset maximum voltage; when Vgd is a negative voltage, Vgd is less than the gate-drain breakdown voltage Vbgd.

[0009] Furthermore, when the compound semiconductor device is in a source-gate-drain powered working state, if the gate-source voltage Vgs is lower than the threshold voltage of the device, the source-drain voltage Vds is lower than the gate-source breakdown voltage Vbds; if the gate-source voltage Vgs is greater than the threshold voltage of the device, the source-drain voltage Vds is lower than the preset maximum voltage.

[0010] Furthermore, the material of the compound semiconductor device is gallium arsenide, gallium nitride, silicon carbide, gallium oxide or indium phosphide.

[0011] Furthermore, the compound semiconductor device type is MOSFET, MESFET, MISFET, HFET, PHEMT, HEMT, SBD or HBT.

[0012] Beneficial effects: The present invention innovatively combines the DC working state of the device with the electroluminescence principle to realize a DC EMMI system and test method for compound semiconductor devices. Using the system of the present invention, the consistency of the photoluminescence intensity and abnormal points of the device in different working states can be observed, which facilitates the subsequent use of physical, electrical and other analysis methods to perform failure analysis on abnormal luminous areas or bright spots, and realize the location of device defects. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a system block diagram of the present invention.

[0014] Figure 2 FIG. 4 is an EMMI distribution diagram of a part of the compound semiconductor device in this embodiment. DETAILED DESCRIPTION

[0015] The accompanying drawings, which constitute a part of the present invention, are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute improper limitations on the present invention.

[0016] like Figure 1 As shown, this embodiment provides an EMMI-based compound semiconductor device DC test system, including a test fixture, a source DC power supply, a gate DC power supply, a drain DC power supply, and an EMMI universal platform, and all hardware has a good common ground.

[0017] The device is assembled in a test fixture, and the source, gate and drain of the device are respectively connected to the test fixture.

[0018] The source power supply, gate power supply and drain power supply are respectively connected to the test fixture to provide DC excitation signals for the source, gate and drain of the device.

[0019] The test fixture is placed on the EMMI universal platform, and the photoelectric detection and data processing of the EMMI universal platform are used to realize the EMMI distribution map of the device; the staff analyzes whether the compound semiconductor device has failed based on the EMMI analysis map, and locates the failure part of the failed compound semiconductor device based on the EMMI analysis map; the staff subsequently uses physical, electrical and other analysis methods to perform failure analysis on the abnormal luminous area or bright spot to locate the device defect. The use process of the system of this embodiment is as follows:

[0020] a. The source power supply, gate power supply, and drain power supply are in the closed state, and the EMMI general platform collects the device background light signal without a DC excitation signal;

[0021] b. The source power supply, gate power supply, and drain power supply are turned on to form a DC excitation signal;

[0022] Optionally, when the source power supply and the gate power supply are powered on, only the source-gate of the device is in working state, and the drain is not working;

[0023] Optionally, when the gate power supply and the drain power supply are powered on, only the gate-drain of the device is in working state, and the gate is not working;

[0024] Optionally, the source power supply, the gate power supply, and the drain power supply are powered on, and the source-gate-drain of the device are all in working state;

[0025] c. The device generates an electroluminescent light signal under the action of a DC excitation signal;

[0026] d. The EMMI universal platform collects the optical signal of the device under working state and forms the EMMI distribution map of the device.

[0027] In this embodiment, the compound semiconductor device may be a gallium arsenide device, a gallium nitride device, a silicon carbide device, a gallium oxide device, or an indium phosphide device;

[0028] In this embodiment, the compound semiconductor device type may be MOSFET, MESFET, MISFET, HFET, PHEMT, HEMT, SBD, HBT;

[0029] When the compound semiconductor device is powered by the source and gate, the gate-source voltage Vgs can be a positive voltage or a negative voltage. When Vgs is a positive voltage, the voltage value cannot exceed the preset maximum voltage to avoid the device burning due to excessive Vgs value. When Vgs is a negative voltage, the voltage value cannot exceed the gate-source breakdown voltage Vbgs of the device.

[0030] When the device is powered on by gate and drain, the gate-drain voltage Vgd can be a positive voltage or a negative voltage. When Vgd is a positive voltage, the voltage value cannot exceed the preset maximum voltage. When Vgd is a negative voltage, the voltage value cannot exceed the gate-drain breakdown voltage Vbgd of the device.

[0031] When the device is powered on by the source, gate, and drain, if the gate-source voltage Vgs is lower than the threshold voltage of the device, the source-drain voltage Vds cannot exceed the gate-source breakdown voltage Vbds of the device. If the gate-source voltage Vgs is greater than the threshold voltage of the device, the source-drain voltage Vds cannot exceed the preset maximum voltage.

[0032] In one embodiment, the device used is a GaN HEMT device, the source of the device is grounded, the gate and the drain are powered by a DC power supply in sequence, the gate voltage Vg is -1.45V, the drain voltage Vd is 50V, and the drain current Id is 200m; the EMMI universal platform collects the optical signal of the GaN HEMT device in the working state to form the device EMMI distribution map, such as Figure 2 shown.

[0033] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

Claims

1. The compound semiconductor device DC test system based on EMMI is characterized by: Includes test fixture, source DC power supply, gate DC power supply, drain DC power supply and EMMI platform; The compound semiconductor device is assembled in a test fixture, and the EMMI platform collects background noise signals of the compound semiconductor device when it is not powered on; then a source DC power supply, a gate DC power supply and a drain DC power supply are used to put the compound semiconductor device in different working states through the test fixture; the EMMI platform collects optical signals of the compound semiconductor device in different working states, and deducts the background noise signal to generate an EMMI analysis diagram of the compound semiconductor device in the working state, and the staff analyzes whether the compound semiconductor device has failed according to the EMMI analysis diagram, and locates the failure part of the failed compound semiconductor device according to the EMMI analysis diagram; the different working states include a source-gate powered working state, a gate-drain powered working state and a source-gate-drain powered working state; a source DC power supply and a gate DC power supply are respectively connected to the source and gate of the compound semiconductor device through the fixture to provide a DC excitation power supply for the compound semiconductor device so that the compound semiconductor is in a source-gate powered working state; A gate DC power supply and a drain DC power supply are respectively connected to the gate and drain of the compound semiconductor device through a clamp to provide a DC excitation power supply for the compound semiconductor device so that the compound semiconductor is in a gate-drain powered working state; a source DC power supply, a gate DC power supply and a drain DC power supply are respectively connected to the source, gate and drain of the compound semiconductor device through a clamp to provide a DC excitation power supply for the compound semiconductor device so that the compound semiconductor is in a gate-drain powered working state.

2. The compound semiconductor device DC test system based on EMMI according to claim 1, characterized in that: When the compound semiconductor device is in the source-gate powered working state, the gate-source voltage Vgs is a positive voltage or a negative voltage; when Vgs is a positive voltage, Vgs is less than the preset maximum voltage, and when Vgs is a negative voltage, Vgs is less than the gate-source breakdown voltage Vbgs.

3. The compound semiconductor device DC test system based on EMMI according to claim 1, characterized in that: When the compound semiconductor device is in a gate-drain powered working state, the gate-drain voltage Vgd is a positive voltage or a negative voltage; when Vgd is a positive voltage, Vgd is less than a preset maximum voltage; when Vgd is a negative voltage, Vgd is less than the gate-drain breakdown voltage Vbgd.

4. The compound semiconductor device DC test system based on EMMI according to claim 1, characterized in that: When the compound semiconductor device is in a source-gate-drain powered working state, if the gate-source voltage Vgs is lower than the threshold voltage of the device, the source-drain voltage Vds is lower than the gate-source breakdown voltage Vbds; if the gate-source voltage Vgs is greater than the threshold voltage of the device, the source-drain voltage Vds is lower than the preset maximum voltage.

5. The compound semiconductor device DC test system based on EMMI according to claim 1, characterized in that: The material of the compound semiconductor device is gallium arsenide, gallium nitride, silicon carbide, gallium oxide or indium phosphide.

6. The compound semiconductor device DC test system based on EMMI according to claim 1, characterized in that: The compound semiconductor device type is MOSFET, MESFET, MISFET, HFET, PHEMT, HEMT, SBD or HBT.

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