Wafer tray structure and equipment

Abstract

The embodiment of the present invention discloses a wafer tray structure and equipment, wherein the wafer tray structure includes: a tray bottom and an annular structure, the tray wall is an annular structure, and the annular structure is arranged at the edge of the tray bottom to limit the wafer; wherein an arc-shaped protrusion is arranged around the annular structure; when the wafer is placed on the tray bottom, the height of the arc-shaped protrusion is greater than or equal to the edge height of the wafer, which can prevent ion reflection at the edge of the wafer during the CVD process, effectively reduce the ion concentration, and ensure the uniformity of ion concentration at the edge and center of the wafer.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor material technology, and in particular to a wafer tray structure and equipment. Background Art

[0002] In the CVD (Chemical Vapour Deposition) process, a tray structure is required. However, using the tray structure in the current existing technology for CVD process will cause differences in plasma density at the edge and center of the wafer, making it difficult to grow uniformly.

[0003] It can be seen that the use of the wafer tray in the prior art in the CVD process cannot ensure the uniformity of the ion concentration at the center and edge of the wafer. Summary of the invention

[0004] In view of this, an object of an embodiment of the present invention is to provide a wafer tray structure and a method for performing a CVD process on a wafer, which effectively reduces the ion concentration and ensures the uniformity of the ion concentration at the edge and center of the wafer.

[0005] In the first aspect, the present application provides the following technical solution through an embodiment:

[0006] A wafer tray structure comprises: a tray bottom and an annular structure, wherein the annular structure is arranged at the edge of the tray bottom; an arc-shaped protrusion is arranged around the annular structure; when a wafer is placed on the tray bottom, the height of the tip of the arc-shaped protrusion is greater than or equal to the minimum edge height of the wafer.

[0007] Optionally, the height of the tip of the arc-shaped protrusion is located at half the height of the wafer.

[0008] Optionally, the arc-shaped protrusion is connected to the edge of the wafer.

[0009] Optionally, the arc-shaped protrusion is detachably connected to the bottom of the tray.

[0010] Optionally, a connecting piece is further included, and the arc-shaped protrusion is connected to the bottom of the tray through the connecting piece.

[0011] Optionally, the distance between the tip of the arc-shaped protrusion and the plane of the bottom of the tray on which the wafer is placed is less than or equal to 10 mm.

[0012] Optionally, the distance from the tip of the arc-shaped protrusion to the annular structure is 3mm-50mm.

[0013] Optionally, a slope is provided at the edge of the bottom of the tray.

[0014] Optionally, the cross-section of the arc-shaped protrusion is elliptical.

[0015] In the second aspect, based on the same inventive concept, the present application provides the following technical solution through an embodiment:

[0016] A device for performing a deposition process on a wafer, characterized by comprising: any wafer tray structure as described above.

[0017] One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:

[0018] The present embodiment provides a wafer tray structure and equipment, wherein the wafer tray structure includes: a tray bottom and an annular structure, wherein the annular structure is arranged at the edge of the tray bottom to limit the wafer; since an arc-shaped protrusion is arranged around the annular structure; when the wafer is placed on the tray bottom, the height of the arc-shaped protrusion is greater than or equal to the edge height of the wafer, which can prevent ion reflection at the edge of the wafer during the CVD process, effectively reduce the ion concentration, and ensure the uniformity of ion concentration at the edge and center of the wafer.

[0019] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 is a structural schematic diagram of a first implementation method of a wafer tray structure provided in the first embodiment of the present invention;

[0022] Figure 2 is a structural schematic diagram of a ring-shaped structure of a wafer tray structure provided in the first embodiment of the present invention;

[0023] Figure 3 is a structural schematic diagram of a second implementation of a wafer tray structure provided in the first embodiment of the present invention;

[0024] Figure 4 is a structural schematic diagram of a third implementation of a wafer tray structure provided in the first embodiment of the present invention;

[0025] Figure 5 It is a structural schematic diagram of a wafer tray structure in the prior art.

[0026] Icons: 100-wafer tray structure; 200-wafer tray structure; 300-wafer tray structure; 11-tray bottom; 111-inclined surface; 112-support block; 12-ring structure; 121-connecting piece; 13-arc-shaped protrusion; 20-wafer; 300-wafer tray structure; 31-tray bottom; 32-ring structure; 600-wafer tray structure. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0028] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] First embodiment

[0030] Please refer to Figure 1 , a wafer tray structure 100 provided in this embodiment includes: a tray bottom 11 and a ring structure 12.

[0031] The tray bottom 11 is used to carry the wafer 20. A support block 112 for supporting the wafer 20 can be provided at the bottom of the tray, which makes it easier to place and install the wafer 20. An inclined surface 111 is provided at the edge of the tray bottom 11. After the wafer 20 is placed on the tray bottom 11, the space between the wafer 20 and the annular structure 12 can be reduced by the cooperation of the inclined surface 111 and the support block 112, so as to avoid ion reflection and accumulation at the edge of the wafer 20 during the CVD process. The inclined surface 111 can be a flat annular surface or a curved surface, without limitation.

[0032] The ring structure 12 is used to limit the position of the wafer 20. The ring structure 12 is arranged at the edge of the tray bottom 11, that is, it surrounds the edge of the tray bottom 11; the wafer 20 can be heated through the tray bottom 11. The ring structure 12 is surrounded by an arc-shaped protrusion 13, such as Figure 2When the wafer 20 is placed on the tray bottom 11, the height of the arc-shaped protrusion 13 can be within the edge height range of the wafer 20. At this time, the tip position of the arc-shaped protrusion 13 corresponds to the height range of the thickness of the wafer 20. The height of the tip of the arc-shaped protrusion 13 can also be greater than the maximum edge height of the wafer 20, as shown in FIG. Figure 3 The wafer tray structure 200 shown. That is, the height of the tip of the arc-shaped protrusion 13 in this embodiment is greater than or equal to the minimum edge height of the wafer 20. Specifically, the height of the tip of the arc-shaped protrusion 13 is greater than or equal to the minimum edge height of the wafer 20; wherein the minimum edge height is the height of the lower surface of the wafer 20, and the maximum edge height is the height of the upper surface of the wafer 20. Since the arc-shaped protrusion 13 is located at a height greater than or equal to the minimum edge height of the wafer 20, the plasma density at the edge of the wafer 20 will be reduced and more uniform during the CVD process, so that the ion concentrations grown at the center and edge of the wafer 20 are more uniform.

[0033] However, in a preferred implementation, the tip height of the arc-shaped protrusion 13 should be within the height range of the thickness of the wafer 20, so as to avoid collision during the rotation or placement of the wafer 20, or failure to achieve better ion uniformity.

[0034] The tip of the arc-shaped protrusion 13 is located at one-half the height of the wafer 20, that is, the smallest circle on the arc-shaped protrusion 13 is located at one-half the height of the wafer 20. The cross section of the arc-shaped protrusion 13 may be a part of a circle or an ellipse, or other arc shapes; the smallest circle may be understood as a circle formed by the point where the arc-shaped protrusion 13 is closest to the axis of the tray bottom 11. Preferably, the elliptical arc in the long radius direction of the ellipse can reduce ion reflection at the edge of the wafer 20 during the CVD process to a greater extent, reduce ion concentration, and avoid accumulation.

[0035] The arc-shaped protrusion 13 can be specifically arranged at the inner edge of the middle position of the annular structure 12, such as Figure 4 The wafer tray structure 300 shown is preferably arranged at the inner edge of the top of the annular structure 12, which can improve the uniformity of ion concentration and facilitate cleaning.

[0036] Furthermore, the arc-shaped protrusion 13 and the wafer 20 can be matched and arranged so that the arc-shaped protrusion 13 is in contact with the edge of the wafer 20 after placement. Avoiding the generation of a gap between the wafer 20 and the annular structure 12, and eliminating the gap can further improve the ion uniformity at a position close to the annular structure 12 on the wafer 20 after the electric field is applied. The connection in this embodiment can be understood as just touching, or overlapping on the plane where the wafer 20 is placed, or the arc-shaped protrusion 13 is as close to the edge of the wafer 20 as possible, so that the gap therein can be roughly ignored.

[0037] In the present embodiment, the distance from the tip of the arc-shaped protrusion 13 to the annular structure 12 is less than or equal to 50 mm, preferably 3 mm-50 mm, which can achieve a better effect of reducing ion concentration. By setting different lengths, wafers 20 of different sizes can be adapted. At the same time, a detachable structure can be set between the arc-shaped protrusion 13 and the annular structure 12, and the specifications of the arc-shaped protrusion 13 can be switched through the detachable structure.

[0038] Furthermore, the distance between the tip of the arc-shaped protrusion 13 and the plane of the tray bottom 11 on which the wafer 20 is placed is less than or equal to 10 mm, and. In order to achieve an adjustable distance between the plane of the tray bottom 11 on which the wafer 20 is placed; in this embodiment, a connecting member 121 may be provided, through which the annular structure 12 is detachably or telescopically connected to the edge of the tray bottom 11. The connecting member 121 may be a rod with adjustable length, and the height of the arc-shaped protrusion 13 may be adjusted by adjusting the length of the connecting member 121 to adapt to wafers 20 of different thickness requirements, and the uniformity of the ion concentration at the edge of the wafer 20 may be fine-tuned by adjusting the height.

[0039] In addition, in this embodiment, a slope 111 is provided on the tray bottom 11, which can prevent the wafer 20 from sliding toward the edge when it is placed on the tray bottom 11. At the same time, the ring structure 12 is provided as a height-adjustable or detachable structure, which can not only ensure a more uniform ion concentration on the edge of the wafer 20, but also facilitate the cleaning of the wafer tray structure 100 in this embodiment.

[0040] It should be noted that if Figure 5 As shown, in the wafer tray structure 600 in the prior art, after the wafer 20 is placed on the tray bottom 31, there is a large gap between the wafer 20 and the annular structure 32. At the same time, since the annular structure 32 is a vertical wall structure, it cannot effectively suppress the increase in ion concentration, and is not conducive to the cleaning of the tray bottom 32. Therefore, the wafer tray structure 300 in the present application cannot achieve the suppression of ion concentration.

[0041] It should also be noted that the CVD process in this embodiment includes but is not limited to: LPCVD (Low-Pressure Chemical Vapor Deposition), APCVD (atmospheric-pressure chemical vapor deposition), SACVD (sub-atmospheric chemical vapor deposition), UHCVD (Ultrahigh-vacuum chemical vapor deposition), PECVD (Plasma Enhanced Chemical Vapor Deposition), and RTCVD (rapid thermal chemical vapor deposition), etc.

[0042] A wafer tray structure 100 provided in this embodiment includes: a tray bottom 11 and an annular structure 12, wherein the annular structure 12 is arranged at the edge of the tray bottom 11 and can limit the wafer 20; wherein an arc-shaped protrusion 13 is arranged around the annular structure 12; when the wafer 20 is placed on the tray bottom 11, the height of the arc-shaped protrusion 13 is greater than or equal to the edge height of the wafer 20, which can prevent ion reflection at the edge of the wafer 20 during the CVD process, effectively reduce the ion concentration, and ensure the uniformity of the ion concentration at the edge and center of the wafer 20.

[0043] Second embodiment

[0044] See also Figure 3 Based on the same inventive concept, this embodiment provides a device for performing a deposition process on a wafer, including: a wafer tray structure as described in any one of the first embodiments.

[0045] The beneficial effects of the wafer tray structure used in the device for performing a deposition process on wafers in this embodiment can be referred to the corresponding description in the above-mentioned first embodiment, and will not be described in detail in this embodiment.

[0046] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

[0047] In the description of the present invention, it should be noted that the terms "upper", "lower", "horizontal", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the invented product is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present invention. In the description of the present invention, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "install", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be a connection between the two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

Claims

1. A wafer tray structure, characterized in that: include: A tray bottom and an annular structure, wherein the annular structure is disposed at an edge of the tray bottom; The annular structure is surrounded by an arc-shaped protrusion; when the wafer is placed on the bottom of the tray, the height of the tip of the arc-shaped protrusion is greater than or equal to the minimum edge height of the wafer, and the arc-shaped protrusion is connected to the edge of the wafer; wherein, A detachable structure is provided between the arc-shaped protrusion and the annular structure, and the specification of the arc-shaped protrusion can be switched through the detachable structure; The arc-shaped protrusion is detachably connected to the tray bottom, and further comprises a connecting piece, through which the arc-shaped protrusion is connected to the tray bottom.

2. The wafer tray structure according to claim 1, characterized in that: The height of the tip of the arc-shaped protrusion is located at half the height of the wafer.

3. The wafer tray structure according to claim 1, characterized in that: The distance between the tip of the arc-shaped protrusion and the plane of the bottom of the tray on which the wafer is placed is less than or equal to 10 mm.

4. The wafer tray structure according to claim 1, characterized in that: The distance from the tip of the arc-shaped protrusion to the annular structure is 3mm-50mm.

5. The wafer tray structure according to claim 1, characterized in that: An inclined surface is arranged at the edge of the bottom of the tray.

6. The wafer tray structure according to claim 1, characterized in that: The cross section of the arc-shaped protrusion is elliptical.

7. An apparatus for performing a deposition process on a wafer, characterized in that: include: The wafer tray structure as claimed in any one of claims 1 to 6.

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